TWI732732B - Memory card structure and method for manufacturing the same - Google Patents
Memory card structure and method for manufacturing the same Download PDFInfo
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本發明是關於一種記憶卡結構及其製造方法,特別是關於一種較佳結構強度及防水性的記憶卡結構及其製造方法。The invention relates to a memory card structure and a manufacturing method thereof, in particular to a memory card structure with better structural strength and waterproofness and a manufacturing method thereof.
記憶卡問世以來已數十年,且已發展成多種規格,以因應不同的電子裝置(如智慧型手機、數位相機、電腦);此外,記憶卡的儲存容量及傳輸速度亦不斷地提升。It has been decades since the memory card came out, and it has been developed into a variety of specifications to adapt to different electronic devices (such as smart phones, digital cameras, computers); in addition, the storage capacity and transmission speed of the memory card have also been continuously improved.
相對而言,記憶卡的結構沒有大幅度的改變,其基本上是使用一中空的殼體來將基板固定於其中。然而,中空殼體由於結構強度不足,容易因為外力擠壓、彎曲或撞擊而破損、斷裂。此外,中空殼體通常是由兩部分組合而成,其之間會有間隙、無法完全地密合,致使水氣或沙塵等能進入至殼體內。因此,記憶卡通常不適合在濕氣高或沙塵多的場合(例如海灘)使用,容易使殼體內部的控制器、記憶體等零件損壞。In contrast, the structure of the memory card has not changed significantly. It basically uses a hollow housing to fix the substrate in it. However, due to insufficient structural strength, the hollow shell is easily damaged or broken due to external force extrusion, bending or impact. In addition, the hollow shell is usually composed of two parts, and there is a gap between them, which cannot be completely sealed, so that moisture, sand and dust, etc. can enter the shell. Therefore, the memory card is usually not suitable for use in places with high humidity or sandy dust (such as beaches), and it is easy to damage the controller, memory and other parts inside the casing.
綜上,記憶卡相關之技術領域中,尚有若干問題待改善。In summary, in the technical field related to memory cards, there are still some problems to be improved.
本發明之一目的在於提供一種記憶卡結構及其製造方法,使記憶卡結構有較佳的結構強度,不易被外力破壞,亦使記憶卡結構有較佳的防水及防塵性。One of the objectives of the present invention is to provide a memory card structure and a manufacturing method thereof, so that the memory card structure has better structural strength, is not easily damaged by external forces, and also has better waterproof and dustproof properties.
為達上述目的,本發明所提供之記憶卡結構包含:一基板,包含一第一表面、一第二表面、至少一貫穿孔及複數個金屬接點,該貫穿孔貫穿於該第一表面及該第二表面,該些金屬接點設置於該第一表面上;一控制器及一記憶體,設置於該第一表面及該第二表面之其中一者上,且電性連接該些金屬接點;以及一塑封體,覆蓋該第一表面之一部分、該第二表面、該貫穿孔、該控制器及該記憶體,其中,該些金屬接點暴露出該塑封體之外。To achieve the above objective, the memory card structure provided by the present invention includes: a substrate including a first surface, a second surface, at least one through hole and a plurality of metal contacts, the through hole penetrates the first surface and the On the second surface, the metal contacts are provided on the first surface; a controller and a memory are provided on one of the first surface and the second surface, and are electrically connected to the metal contacts Points; and a plastic package covering a part of the first surface, the second surface, the through hole, the controller and the memory, wherein the metal contacts are exposed outside the plastic package.
在一實施例中,該記憶卡結構更包含至少一遮蔽層,該遮蔽層設置該第一表面及該第二表面之其中一者上,且部分地覆蓋該貫穿孔。In one embodiment, the memory card structure further includes at least one shielding layer disposed on one of the first surface and the second surface and partially covering the through hole.
在一實施例中,該基板包含複數個貫穿孔,該些貫穿孔的其中一個被該遮蔽層部分地覆蓋,而該些貫穿孔的其中另一個被該遮蔽層完全覆蓋。In one embodiment, the substrate includes a plurality of through holes, one of the through holes is partially covered by the shielding layer, and the other of the through holes is completely covered by the shielding layer.
在一實施例中,該記憶卡結構更包含至少一金屬層,該金屬層設置該第一表面及該第二表面之其中一者上,其中,該金屬層位於該貫穿孔之一開口之一側、或是環繞該開口。In one embodiment, the memory card structure further includes at least one metal layer disposed on one of the first surface and the second surface, wherein the metal layer is located at one of the openings of the through hole Side, or around the opening.
在一實施例中,該基板包含複數貫穿孔,該些貫穿孔之開口面積彼此不同。In one embodiment, the substrate includes a plurality of through holes, and the opening areas of the through holes are different from each other.
在一實施例中,該貫穿孔為圓形孔、橢圓形孔或矩形孔。In an embodiment, the through hole is a circular hole, an oval hole or a rectangular hole.
為達上述目的,本發明所提出的記憶卡結構的製造方法包括:提供一基板,其中,該基板包含一第一表面、一第二表面、至少一貫穿孔及複數個金屬接點,該貫穿孔貫穿於該第一表面及該第二表面,該些金屬接點設置於該第一表面上;設置一控制器及一記憶體於該第一表面及該第二表面之其中一者上;將該基板放置於一模具中;使一塑料流入至該模具中,以覆蓋該第一表面之一部分、該第二表面、該貫穿孔、該控制器及該記憶體,其中,該塑料經由該貫穿孔從該第一表面及該第二表面之其中一者流動至另一者上;以及使該塑料固化,以形成一塑封體,其中,該些金屬接點暴露於該塑封體之外。In order to achieve the above objective, the manufacturing method of the memory card structure proposed by the present invention includes: providing a substrate, wherein the substrate includes a first surface, a second surface, at least one through hole and a plurality of metal contacts, the through hole Passing through the first surface and the second surface, the metal contacts are disposed on the first surface; a controller and a memory are disposed on one of the first surface and the second surface; The substrate is placed in a mold; a plastic is poured into the mold to cover a part of the first surface, the second surface, the through hole, the controller, and the memory, wherein the plastic passes through the through hole The holes flow from one of the first surface and the second surface to the other; and curing the plastic to form a plastic package, wherein the metal contacts are exposed outside the plastic package.
在一實施例中,製造方法更包括該塑料流動至該第二表面上,然後經由該貫穿孔流動至該第一表面上。In one embodiment, the manufacturing method further includes flowing the plastic onto the second surface, and then flowing onto the first surface through the through hole.
在一實施例中,製造方法更包括該塑料流動至該第一表面上,然後經由該貫穿孔流動至該第二表面上。In one embodiment, the manufacturing method further includes flowing the plastic onto the first surface, and then flowing onto the second surface through the through hole.
在一實施例中,製造方法更包括該塑料流動至該第一表面及該第二表面上,然後流動至該貫穿孔中。In one embodiment, the manufacturing method further includes flowing the plastic onto the first surface and the second surface, and then flowing into the through hole.
在一實施例中,製造方法更包括設置至少一遮蔽層於該第一表面及該第二表面之其中一者上,並使該遮蔽層部分地覆蓋該貫穿孔,以減少該塑料於該貫穿孔中的流速。In one embodiment, the manufacturing method further includes disposing at least one shielding layer on one of the first surface and the second surface, and making the shielding layer partially cover the through hole, so as to reduce the penetration of the plastic The flow rate in the hole.
在一實施例中,製造方法更包括設置至少一金屬層於該第一表面及該第二表面之其中一者上,並使該金屬層位於該貫穿孔之一開口之一側、或環繞該開口,以增加該塑料於該貫穿孔中的流速。In one embodiment, the manufacturing method further includes disposing at least one metal layer on one of the first surface and the second surface, and positioning the metal layer on one side of an opening of the through hole or surrounding the Opening to increase the flow rate of the plastic in the through hole.
為讓上述目的、技術特徵及優點能更明顯易懂,下文以較佳的實施例配合所附圖式進行詳細說明。In order to make the above objectives, technical features, and advantages more obvious and understandable, a detailed description will be given below with a preferred embodiment in conjunction with the accompanying drawings.
以下將具體地描述根據本發明的具體實施例;惟,在不背離本發明之精神下,本發明尚可以多種不同形式之實施例來實踐,不應將本發明尚保護範圍解釋為限於說明書所陳述者。The following will specifically describe specific embodiments according to the present invention; however, without departing from the spirit of the present invention, the present invention can still be practiced in many different forms of embodiments, and the scope of protection of the present invention should not be construed as being limited to what is stated in the specification. Presenter.
除非上下文中清楚地另外指明,否則本文所用之單數形式「一」亦包含複數形式,而所述之方位(如前、後、上、下、內、外等)係為相對方位,可依據記憶卡結構的使用狀態而定義,並非指示或暗示記憶卡結構需有特定方向之構造、操作或製造,亦不該理解為本發明的限制。Unless the context clearly indicates otherwise, the singular form "one" used in this article also includes the plural form, and the orientation (such as front, back, up, down, inside, outside, etc.) is a relative orientation, which can be remembered The definition of the use state of the card structure does not indicate or imply that the memory card structure requires a specific structure, operation, or manufacture, nor should it be understood as a limitation of the present invention.
請參第1A圖至第1D圖,於本發明之 較佳實施例中,一記憶卡結構1被提出,該記憶卡結構1能為各種規格的記憶卡,例如micro SD等,且其基本上包括一基板10、一記憶體20、一控制器30及一塑封體40;各元件的技術內容依序說明如下。Please refer to Figures 1A to 1D. In a preferred embodiment of the present invention, a
請併參第2A圖及第2B圖,基板10為印刷電路板等其上或其內具有導電線路或導電結構(圖未示)之板體,基板10包含一第一表面100、一第二表面200、至少一貫穿孔300及複數個金屬接點400,第一表面100與第二表面200為沿著基板10的厚度方向而相對地設置,亦可稱為基板10的頂面及底面。至少一貫穿孔300則貫穿於第一表面100及第二表面200(沿著基板10的厚度方向),即貫穿孔300的一開口設置於第一表面100上,而另一開口設置於第二表面200上;或可說,貫穿孔300存在於基板10內。另,本實施例中,基板10是包含複數個貫穿孔300,其可沿著基板10的寬度方向排列成至少一排;而若基板10僅包含一個貫穿孔300時(圖未示),貫穿孔300可為沿著基板10的寬度方向延伸的貫穿槽。Please refer to FIGS. 2A and 2B together. The
該些金屬接點400設置於第一表面100上,並與基板10的導電線路或結構相連接;當記憶卡結構1插入至一記憶卡插槽(圖未示)時,該些金屬接點400可與記憶卡槽的接點(圖未示)相接觸,以形成電性連接。The
接著請參第3圖,記憶體20及控制器30設置於第一表面100及第二表面200之其中一者上,且電性連接該些金屬接點400。詳言之,在一般情況下,控制器30及記憶體20皆設置於基板10的第二表面200上,而不是金屬接點400所在的第一表面100上,因為第二表面200能提供較多區域,便於控制器30及記憶體20的設置。於其他實施例中,因應不同電路佈局需求,控制器30及記憶體20之全部或其中一者亦可設置於基板10的第一表面100上。Next, referring to FIG. 3, the
控制器30可為積體電路晶片(IC chip)等,而記憶體20可為快閃記憶體晶片等,控制器30用以控制記憶體20的資料存取;此外,控制器30及記憶體20可具有堆疊結構,或者控制器30堆疊於記憶體20上。控制器30及記憶體20可通過基板10的導電線路或結構而電性連接至金屬接點400。The
除了貫穿孔300外,上述的基板10、控制器30及記憶體20的技術內容及實現應為本領域中具有通常知識者應為知悉者。Except for the
請復參第1A圖至第1D圖,記憶卡結構1的塑封體40是覆蓋(包覆)基板10的第一表面100之一部分、第二表面200、貫穿孔300、控制器30及記憶體20,其中,該些金屬接點400暴露於塑封體40之外。更詳細而言,塑封體40是樹脂等塑料固化而成的一體化結構,該樹脂可為環氧樹脂等熱固型樹脂。塑封體40是通過射出成型等方式而一體成形、且覆蓋基板10等元件。Please refer to FIGS. 1A to 1D again. The
塑封體40覆蓋第一表面100之一部分,而非全部,即第一表面100的金屬接點400所在的區域150沒有被覆蓋,金屬接點400得以暴露出。塑封體40可覆蓋第二表面200的全部,亦可覆蓋第一表面100與第二表面200之間的基板10的側面的全部,但不排除部分地覆蓋第二表面200或側面的可行性。塑封體40覆蓋貫穿孔300時,是將貫穿孔300填滿。控制器30及記憶體20被塑封體40覆蓋而無法直接觀察到。此外,塑封體40直接地接觸這些元件而覆蓋,其之間應沒有間隙。The
藉此,塑封體40是一體成型的實心結構,而非組裝的中空結構,故塑封體40能有較佳的結構強度,不易因為外力損壞或變形,進而能妥善地保護基板10、控制器30及記憶體20。此外,塑封體40覆蓋基板10的大部分,更伸入基板10的貫穿孔300,因此塑封體40與基板10之間能有較佳的結合強度,可承受較大的撞擊力道而不分離。再者,塑封體40與基板10之間實質上不存在間隙,故水氣或沙塵難以侵入、接觸控制器30及記憶體20;因此,記憶卡結構1經測試後,應可達到如IP68的高防水防塵等級。Therefore, the
接著將說明依據本發明之其他較佳實施例的記憶卡結構的製造方法,該製造方法可製造出相同或類似於上述較佳實施例的記憶卡結構1,故製造方法的技術內容與記憶卡結構1的技術內容可相互參考、應用,相同的部份將省略或簡化。Next, the manufacturing method of the memory card structure according to other preferred embodiments of the present invention will be described. The manufacturing method can manufacture the same or similar
請參第6圖所示之流程,記憶卡結構的製造方法基本上可包含四個步驟S201~S204,而該些步驟的示意圖分別如第7A圖至第7B圖所示。Please refer to the process shown in Figure 6, the manufacturing method of the memory card structure basically includes four steps S201 to S204, and the schematic diagrams of these steps are shown in Figures 7A to 7B, respectively.
具體而言,記憶卡結構1製造時,首先如第7A圖所示,提供一基板10(步驟S201)。該基板10已事先製造好,且控制器30及記憶體20(如第3圖所示)已事先設置於第一表面100及第二表面200之其中一者上。換言之,步驟S201並非基板10、控制器30及記憶體20的製造及組裝,而是將製造及組裝完成的基板10、控制器30及記憶體20準備好,以待後續步驟的進行。Specifically, when the
接著如第7B圖所示,將已設置好控制器30及記憶體20之基板10放置於一模具70中(步驟S202);該模具70可為射出成型用的模具,包含上模、下模,且上模及下模之間形成有一模穴,該模穴對應於塑封體40的形狀及尺寸。基板10放置於模具70內時,其第一表面100之金屬接點400所在的區域150可被模具70接觸而覆蓋。Then, as shown in FIG. 7B, the
爾後如第7C圖所示,使一塑料45流入至模具70中,以覆蓋第一表面100之一部分、第二表面200、貫穿孔300、控制器30及記憶體20(如第3圖所示),其中,塑料45經由貫穿孔300從第一表面100及第二表面200之其中一者流動至另一者上(步驟S203)。塑料45為塑封體40的原料,為熔融的液體,故可於模具70中流動。塑料45先流動至第二表面200上,然後經由貫穿孔300流動至第一表面100上。塑料45會持續地注入模具70的模穴中,以充滿模穴。由於基板10的第一表面100的區域150被模具70覆蓋,故塑料45無法覆蓋該區域150及金屬接點400。Thereafter, as shown in Figure 7C, a plastic 45 is poured into the
最後,如第7D圖所示,使塑料45固化,以形成塑封體40,其中,該些金屬接點400暴露於塑封體40之外(步驟S204)。塑料45被填充於模具70中之後,其溫度會漸漸地降低而變成固體。然後,待塑料45固化後,即可連同基板10一起取出於模具70外。如此,可獲得一體成型且實心的塑封體40,且塑封體40與基板10緊密地結合。Finally, as shown in FIG. 7D, the plastic 45 is cured to form the
此外,於步驟S202中,塑料45在模具70中的流動順序可依照模具70的設計或生產需求來做出各種調整。舉例而言,模具70的澆口可位於第一表面100之下方,使得塑料45可先流動至第一表面100上,然後經由貫穿孔300流動至第二表面200上;或者,模具70的澆口可位於第二表面200之上方及第一表面100之下方,使塑料45可同時地流動至第一表面100及第二表面200上,然後再流動至貫穿孔300中。In addition, in step S202, the flow sequence of the plastic 45 in the
另說明的是,如第7C圖所示的步驟S203中,若塑料45過快或過多地通過貫穿孔300而流入第一表面100時,可能會導致第一表面100與第二表面200上的塑料45的壓力差異過大或不平均,導致基板10變形。基板10變形會導致封裝電性不良等缺失。若塑料45過慢或過少地通過貫穿孔300而流入第一表面100時,同樣會造成基板10上下側的塑料45的壓力不當。當記憶體20為堆疊型結構時,塑料45的流動會被阻礙,亦可能會導致基板10上下的塑料45的壓力不當。It should also be noted that, in step S203 shown in FIG. 7C, if the plastic 45 flows into the
因此,通常可藉由適當的模具設置或製程控制,來調整或控制塑料45的流量或流路,以避免基板10或其他元件的損壞。除此之外,依據本發明的其他較佳實施例,記憶卡結構1及其製造方法尚可包含以下技術內容,以幫助調節塑料45於基板10上下兩側的壓力。Therefore, it is usually possible to adjust or control the flow rate or flow path of the plastic 45 through appropriate mold settings or process control to avoid damage to the
請先參第4A圖,記憶卡結構1更包含至少一遮蔽層50,遮蔽層50設置第一表面100及第二表面200之其中一者上,且部分地覆蓋貫穿孔300。遮蔽層50可為虛設晶片(dummy die)等塊狀或板狀結構,其設置於第一表面100及/或第二表面200上,且可不需與基板10電性連接。而依據欲遮蔽的貫穿孔300的數目,決定遮蔽層50的尺寸、位置及/或數目;例如,遮蔽層50可為三個,尺寸各為不同,且遮蔽層50遮蔽貫穿孔300的數目亦不同。此外,有些貫穿孔300可被遮蔽層50部分地覆蓋,有些貫穿孔300可被遮蔽層50完全地覆蓋。另一方面,有些貫穿孔300可不被遮蔽層50覆蓋;又或者,全部的貫穿孔300皆被遮蔽層50部分地遮蔽。Please refer to FIG. 4A first. The
請併參第7A圖,於製造時,遮蔽層50可於基板10被提供後,再設置於基板10上;或者,於基板10被提供之前,遮蔽層50已設置於基板10上。請併參第7C圖,接著於塑料45注入模具70內時,由於遮蔽層50縮減了貫穿孔300的開口350,減緩了塑料45通過貫穿孔300的流速,進而減少基板10下側的塑料45的壓力。另說明的是,若基板10只包含一個貫穿孔300時,遮蔽層50不宜將貫穿孔300完全地覆蓋,否則塑料45無法通過貫穿孔300。Please also refer to FIG. 7A. During manufacture, the
請接著參第4B圖,記憶卡結構1可更包含至少一金屬層60,可設置第一表面100及第二表面200之其中一者上,且金屬層60可位於貫穿孔300之開口350之一側。金屬層60所設置的第一表面100或第二表面200為塑料45先流至的表面,而金屬層60所位於的貫穿孔300之開口350之一側為塑料45先流至的側向。沿著基板10的長度方向,貫穿孔300可位於金屬層60與記憶體20之間;此外,貫穿孔300與金屬層60可相分隔,但金屬層60亦可接觸到開口350,甚至延伸至貫穿孔300內。另一方面,金屬層60之數量可對應該些貫穿孔300之數量,而於其他實施例中,金屬層60可少於貫穿孔300之數量,也就是,有些貫穿孔300之一側可不需金屬層60設置,或者,一個金屬層60對應兩個以上的貫穿孔300(該金屬層60此時可為橫條狀)。Please refer to FIG. 4B. The
請參第4C圖,金屬層60亦可圍繞貫穿孔300的開口350,即金屬層60為環圈狀,可接觸開口350,但亦可以與開口350相分隔。Please refer to FIG. 4C, the
請併參第7A圖,於製造時,上述的金屬層60可於基板10被提供後,再設置於基板10上,或者,於基板10被提供之前,金屬層60已設置於基板10上。請併參第7C圖,塑料45注入模具70內時,由於金屬層60具有不易與塑料45黏著的特性,塑料45可快速地流過金屬層60,增加塑料45通過貫穿孔300的流速,亦可增加塑封效率。Please also refer to FIG. 7A. During manufacturing, the
請參第5A圖至第5C圖,記憶卡結構1的基板10所包含的該些貫穿孔300可有不同的開口面積或形狀。如第5A圖所示,有一部分的貫穿孔300A有較大的開口面積,而另一部份的貫穿孔300B具有較小的開口面積。如第5B圖至第5C圖所示,該些貫穿孔300可為圓形孔310或橢圓形孔320。另外,基板10所包含的複數個貫穿孔300亦可同時地包含圓形孔310、橢圓孔320或矩形孔(如第5A圖所示),並且,該些圓形孔310、橢圓孔320或矩形孔之貫穿孔300的開口面積亦可彼此不相同。Referring to FIGS. 5A to 5C, the through
請併參第7C圖,於製造時,由於貫穿孔300有不同開口面積或形狀,塑料45通過貫穿孔300的流量會不同,例如塑料45可較快地通過記憶體20前方的大貫穿孔300A而流動至第一表面100,故記憶體20前方不會累積過多的塑料45而造成壓力上升。另一方面,塑料45可較慢地通過小貫穿孔300B,亦具有控制塑料45流速之功效。Please also refer to Figure 7C. During manufacture, due to the different opening areas or shapes of the through
易言之,貫穿孔300、遮蔽層50及金屬層60每一者的數量、尺寸及/或位置等,皆可依照塑料45的流速及流路需求,做出相應之調整,藉此得到製造良率高的塑封體40及記憶卡結構1。此外,可藉由模流分析等工具,獲得所需的貫穿孔300、遮蔽層50、金屬層60的數量、尺寸或位置。In other words, the number, size, and/or position of each of the through
綜上所述,本發明所提出之記憶卡結構具有較佳的結構強度,不易被外力破壞,亦具有較佳的防水及防塵性。In summary, the memory card structure proposed by the present invention has better structural strength, is not easily damaged by external forces, and also has better waterproof and dustproof properties.
以上各實施例僅用以說明本發明的技術方案,而非對其限制;儘管參照前述各實施例對本發明進行了詳細的說明,本領域的普通技術人員應當理解:其依然可以對前述各實施例所記載的技術方案進行修改,或者對其中部分或者全部技術特徵進行均等替換;而這些修改或者替換,並不使相應技術方案的本質脫離本發明各實施例技術方案的範圍。The above embodiments are only used to illustrate the technical solutions of the present invention, not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still implement the foregoing various embodiments. The technical solutions recorded in the examples are modified, or some or all of the technical features are equally replaced; these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
1 記憶卡結構
10 基板
20 記憶體
30 控制器
40 塑封體
45 塑料
50 遮蔽層
60 金屬層
70 模具
100 第一表面
150 區域
200 第二表面
300 貫穿孔
300A 大貫穿孔
300B 小貫穿孔
310 圓形孔
320 橢圓孔
350 開口
400 金屬接點
S201~S204 步驟
1
第1A圖至第1C圖分別為依據本發明之較佳實施例之記憶卡結構之前視圖、後視圖及側視圖,而第1D圖係為沿著第1A圖所示的AA割面線的剖視圖; 第2A圖及第2B圖分別為第1A圖所示之記憶卡結構的基板之前視圖及後視圖; 第3圖為第1A圖所示之記憶卡結構的基板、控制器及記憶體之示意圖; 第4A圖至第5C圖分別為依據本發明之另一較佳實施例之記憶卡結構之示意圖(塑封體未繪製); 第6圖為依據本發明之又一較佳實施例之記憶卡結構的製造方法之流程圖;以及 第7A圖至第7D圖分別為第6圖所示之記憶卡結構的製造方法的步驟示意圖。 Figures 1A to 1C are respectively a front view, a rear view and a side view of a memory card structure according to a preferred embodiment of the present invention, and Figure 1D is a cross-sectional view along the AA cut line shown in Figure 1A ; Figures 2A and 2B are respectively a front view and a back view of the substrate of the memory card structure shown in Figure 1A; Figure 3 is a schematic diagram of the substrate, controller and memory of the memory card structure shown in Figure 1A; 4A to 5C are schematic diagrams of the structure of a memory card according to another preferred embodiment of the present invention (the plastic package is not drawn); FIG. 6 is a flowchart of a method of manufacturing a memory card structure according to another preferred embodiment of the present invention; and FIG. 7A to FIG. 7D are schematic diagrams of the steps of the manufacturing method of the memory card structure shown in FIG. 6 respectively.
1 記憶卡結構
10 基板
40 塑封體
100 第一表面
150 區域
400 金屬接點
1
Claims (7)
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6843421B2 (en) * | 2001-08-13 | 2005-01-18 | Matrix Semiconductor, Inc. | Molded memory module and method of making the module absent a substrate support |
TWI256113B (en) * | 2003-03-14 | 2006-06-01 | Siliconware Precision Industries Co Ltd | Semiconductor package positionable in encapsulating process and method for fabricating the same |
TW200709071A (en) * | 2002-10-08 | 2007-03-01 | Hitachi Ulsi Sys Co Ltd | Ic card and manufacturing method thereof applied to semiconductor memory card |
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2019
- 2019-10-25 TW TW110100071A patent/TWI732732B/en active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6843421B2 (en) * | 2001-08-13 | 2005-01-18 | Matrix Semiconductor, Inc. | Molded memory module and method of making the module absent a substrate support |
TW200709071A (en) * | 2002-10-08 | 2007-03-01 | Hitachi Ulsi Sys Co Ltd | Ic card and manufacturing method thereof applied to semiconductor memory card |
TWI256113B (en) * | 2003-03-14 | 2006-06-01 | Siliconware Precision Industries Co Ltd | Semiconductor package positionable in encapsulating process and method for fabricating the same |
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