TWI732210B - Magnetic materials and electronic parts - Google Patents

Magnetic materials and electronic parts Download PDF

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TWI732210B
TWI732210B TW108115369A TW108115369A TWI732210B TW I732210 B TWI732210 B TW I732210B TW 108115369 A TW108115369 A TW 108115369A TW 108115369 A TW108115369 A TW 108115369A TW I732210 B TWI732210 B TW I732210B
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oxide film
alloy particles
magnetic
thickness
soft magnetic
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TW201931388A (en
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織茂洋子
李新宇
竹岡伸介
賀成莉
大竹健二
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日商太陽誘電股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
    • H01F1/342—Oxides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G37/00—Compounds of chromium
    • C01G37/02—Oxides or hydrates thereof
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/02—Ferrous alloys, e.g. steel alloys containing silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/18—Ferrous alloys, e.g. steel alloys containing chromium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/265—Magnetic multilayers non exchange-coupled

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  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Soft Magnetic Materials (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Powder Metallurgy (AREA)

Abstract

本發明之課題在於提供一種能夠提高絕緣特性之磁性材料及電子零件。 本發明之一形態之磁性材料具備：複數個軟磁性合金粒子，其等包含Fe、元素L(其中，元素L為Si、Zr、Ti之任一者)及元素M(其中，元素M為除Si、Zr、Ti以外且較Fe更容易氧化之元素)；第1氧化膜，其包含元素L，且分別覆蓋上述複數個軟磁性合金粒子；第2氧化膜，其包含元素M，且覆蓋上述第1氧化膜；第3氧化膜，其包含元素L，且覆蓋上述第2氧化膜；第4氧化膜，其包含Fe，且覆蓋上述第3氧化膜；及結合部，其由上述第4氧化膜之一部分構成，將上述複數個軟磁性合金粒子彼此結合。The subject of the present invention is to provide a magnetic material and electronic component that can improve the insulation properties. The magnetic material of one aspect of the present invention includes: a plurality of soft magnetic alloy particles, which include Fe, element L (wherein element L is any one of Si, Zr, Ti), and element M (wherein element M is divided by Elements other than Si, Zr, and Ti that are more easily oxidized than Fe); a first oxide film, which contains element L, and covers the plurality of soft magnetic alloy particles, respectively; a second oxide film, which contains element M, and covers the above The first oxide film; the third oxide film including the element L and covering the second oxide film; the fourth oxide film including Fe and covering the third oxide film; and the bonding portion, which is formed by the fourth oxide film A part of the film is formed by bonding the plurality of soft magnetic alloy particles to each other.

Description

磁性材料及電子零件Magnetic materials and electronic parts

本發明係關於一種於線圈、電感器等中主要用作磁芯之磁性材料及使用其之電子零件。The present invention relates to a magnetic material mainly used as a magnetic core in coils, inductors, etc., and electronic parts using the magnetic material.

電感器、扼流圏、變壓器等電子零件具有作為磁芯之磁性體、及形成於該磁性體之內部或表面之線圈。作為磁性體之材料，通常使用有例如NiCuZn系鐵氧體等鐵氧體材料。 近年來，對此種電子零件要求大電流化，為了滿足該要求，研究將磁性體之材料自先前之鐵氧體切換成金屬系之材料。作為金屬系之材料，已知有FeSiCr合金、FeSiAl合金等，例如於專利文獻1揭示有FeSiCr系軟磁性合金粉末之合金相彼此經由包含Fe、Si及Cr之氧化物相而結合之壓粉磁芯。 另一方面，金屬系之磁性材料雖然材料本身之飽和磁通密度較鐵氧體高，但材料本身之體積電阻率較先前之鐵氧體低，因此要求電絕緣特性之進一步提高。例如於專利文獻2揭示有於以Fe作為主成分之軟磁性金屬粒子之粒子間介置玻璃部的軟磁性壓粉磁芯。玻璃部係藉由於加壓狀態下利用熱使低熔點玻璃材料軟化而形成。低熔點玻璃材料之熔點較低，藉由加熱於軟磁性金屬粒子間產生擴散反應，能夠填埋無法利用覆蓋軟磁性金屬粒子之表面之氧化物部完全填埋之大小之空隙。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開2015-126047號公報 [專利文獻2]日本專利特開2015-144238號公報Electronic parts such as inductors, chokes, and transformers have a magnetic body as a magnetic core and a coil formed inside or on the surface of the magnetic body. As the material of the magnetic body, ferrite materials such as NiCuZn ferrite are generally used. In recent years, large currents have been required for this kind of electronic parts. In order to meet this demand, research has been conducted to switch the material of the magnetic body from the conventional ferrite to the metal-based material. As metal-based materials, FeSiCr alloys, FeSiAl alloys, etc. are known. For example, Patent Document 1 discloses a powder magnet in which the alloy phases of FeSiCr-based soft magnetic alloy powders are combined through oxide phases containing Fe, Si, and Cr. core. On the other hand, although the saturation magnetic flux density of the metal-based magnetic material is higher than that of ferrite, the volume resistivity of the material itself is lower than that of the previous ferrite. Therefore, it is required to further improve the electrical insulation properties. For example, Patent Document 2 discloses a soft magnetic powder magnetic core in which a glass portion is interposed between soft magnetic metal particles containing Fe as a main component. The glass part is formed by softening the low melting point glass material by heat under pressure. The low melting point glass material has a relatively low melting point. By heating to generate a diffusion reaction between the soft magnetic metal particles, it can fill gaps of a size that cannot be completely filled by the oxide part covering the surface of the soft magnetic metal particles. [Prior Technical Literature] [Patent Literature] [Patent Document 1] Japanese Patent Laid-Open No. 2015-126047 [Patent Document 2] Japanese Patent Laid-Open No. 2015-144238

[發明所欲解決之問題] 然而，使用玻璃難以填埋合金粒子間之間隙，且具有缺乏絕緣穩定性之問題。又，即便能夠利用玻璃填埋合金粒子間之間隙，亦有合金粒子之氧化反應變得不穩定，反而使絕緣特性降低之虞。 鑒於如上述般之情況，本發明之目的在於提供一種能夠提高絕緣特性之磁性材料及電子零件。 [解決問題之技術手段] 為達成上述目的，本發明之一形態之磁性材料具有複數個磁性合金粒子、第1氧化膜、第2氧化膜、第3氧化膜、第4氧化膜、及結合部。 上述複數個磁性合金粒子包含Fe、元素L(其中，元素L為Si、Zr、Ti之任一者)及元素M(其中，元素M為除Si、Zr、Ti以外且較Fe更容易氧化之元素)。 上述第1氧化膜包含元素L，且分別覆蓋上述複數個軟磁性合金粒子。 上述第2氧化膜包含元素M，且覆蓋上述第1氧化膜。 上述第3氧化膜為非晶質，包含元素L，且覆蓋上述第2氧化膜。 上述第4氧化膜包含Fe，且覆蓋上述第3氧化膜。 上述結合部由上述第4氧化膜之一部分構成，將上述複數個軟磁性合金粒子彼此結合。 於上述磁性材料中，軟磁性合金粒子之表面係由上述第1～第4氧化膜覆蓋，故可有效地提高經由由第4氧化膜之一部分構成之結合部而結合之軟磁性合金粒子間的絕緣特性。 典型而言，元素M為Cr，元素L為Si。 上述第3氧化膜亦可具有上述第1氧化膜之厚度以上之厚度。 上述第3氧化膜之厚度並無特別限定，例如為1 nm以上且20 nm以下。 本發明之其他形態之磁性材料具有複數個磁性合金粒子、第1氧化膜、第2氧化膜、第3氧化膜、及第4氧化膜。 上述複數個磁性合金粒子包含Fe、元素L(其中，元素L為Si、Zr、Ti之任一者)及元素M(其中，元素M為除Si、Zr、Ti以外且較Fe更容易氧化之元素)。 上述第1氧化膜包含元素L，且分別覆蓋上述複數個軟磁性合金粒子。 上述第2氧化膜包含元素M，且覆蓋上述第1氧化膜。 上述第3氧化膜為非晶質，包含元素L，且覆蓋上述第2氧化膜。 上述第4氧化膜包含Fe，且覆蓋上述第3氧化膜。 本發明之一形態之電子零件具備含有上述磁性材料之磁芯。 [發明之效果] 根據本發明，能夠實現絕緣特性之提高。[The problem to be solved by the invention] However, the use of glass is difficult to fill the gaps between alloy particles and has the problem of lack of insulation stability. In addition, even if the gaps between the alloy particles can be filled with glass, the oxidation reaction of the alloy particles may become unstable, which may reduce the insulation properties on the contrary. In view of the above-mentioned situation, the object of the present invention is to provide a magnetic material and electronic component that can improve the insulating properties. [Technical means to solve the problem] In order to achieve the above-mentioned object, the magnetic material of one aspect of the present invention has a plurality of magnetic alloy particles, a first oxide film, a second oxide film, a third oxide film, a fourth oxide film, and a bonding portion. The above-mentioned plurality of magnetic alloy particles include Fe, element L (wherein element L is any of Si, Zr, Ti) and element M (wherein, element M is excluding Si, Zr, and Ti and is more easily oxidized than Fe element). The first oxide film contains the element L and covers the plurality of soft magnetic alloy particles, respectively. The second oxide film contains the element M and covers the first oxide film. The third oxide film is amorphous, contains the element L, and covers the second oxide film. The fourth oxide film contains Fe and covers the third oxide film. The bonding portion is composed of a part of the fourth oxide film, and bonds the plurality of soft magnetic alloy particles to each other. In the above-mentioned magnetic material, the surface of the soft magnetic alloy particles is covered by the first to fourth oxide films. Therefore, it is possible to effectively increase the bond between the soft magnetic alloy particles through the bonding part formed by a part of the fourth oxide film. Insulation characteristics. Typically, the element M is Cr and the element L is Si. The third oxide film may have a thickness greater than or equal to the thickness of the first oxide film. The thickness of the third oxide film is not particularly limited, and is, for example, 1 nm or more and 20 nm or less. The magnetic material of another aspect of the present invention has a plurality of magnetic alloy particles, a first oxide film, a second oxide film, a third oxide film, and a fourth oxide film. The above-mentioned plurality of magnetic alloy particles include Fe, element L (wherein element L is any of Si, Zr, Ti) and element M (wherein, element M is excluding Si, Zr, and Ti and is more easily oxidized than Fe element). The first oxide film contains the element L and covers the plurality of soft magnetic alloy particles, respectively. The second oxide film contains the element M and covers the first oxide film. The third oxide film is amorphous, contains the element L, and covers the second oxide film. The fourth oxide film contains Fe and covers the third oxide film. An electronic component of one aspect of the present invention includes a magnetic core containing the above-mentioned magnetic material. [Effects of Invention] According to the present invention, the insulation characteristics can be improved.

以下，一面參考圖式，一面對本發明之實施形態進行說明。 圖1係表示作為本發明之一實施形態之電子零件的線圈零件(積層電感器)之全體立體圖。圖2係圖1中之A-A線剖視圖。 [線圈零件之全體構成] 本實施形態之線圈零件10如圖1所示般，具有零件本體11及一對外部電極14、15。零件本體11形成為於X軸方向具有寬度W、於Y軸方向具有長度L、且於Z軸方向具有高度H之長方體形狀。一對外部電極14、15設置於零件本體11之於長邊方向(Y軸方向)上對向之2個端面。 零件本體11之各部之尺寸並無特別限定，於本實施形態中，設為長度L為1.6～2 mm，寬度W為0.8～1.2 mm，高度H為0.4～0.6 mm。 零件本體11如圖2所示般，具有長方體形狀之磁性體部12、及由磁性體部12所覆蓋之螺旋狀之線圈部13(內部導體)。 圖3係零件本體11之分解立體圖。圖4係圖1中之B-B線剖視圖。 磁性體部12如圖3所示般，具有複數個磁性體層MLU、ML1～ML7及MLD於高度方向(Z軸方向)積層而一體化之構造。磁性體層MLU及MLD構成磁性體部12之上下之覆蓋層(第3磁性層)。磁性體層ML1～ML7構成包含線圈部13之導體層，如圖4所示般，分別具有第1磁性層121、第2磁性層122、及導體圖案C11～C17。 第1磁性層121係作為介置於鄰接之上下之導體圖案C11～C17之間的導體間層構成。第1磁性層121使用軟磁性合金粒子。作為軟磁性合金粒子，於本實施形態中，例如使用FeSiCr系合金磁性粒子。軟磁性合金粒子之組成，典型而言Cr為1～5 wt%，Si為2～10 wt%，除雜質以外設剩餘部分為Fe，整體上為100 wt%。 視為軟磁性合金粒子之體積基準之粒徑的情形時之平均粒徑(中值直徑)，可根據作為目標之磁特性(相對磁導率、電感、飽和磁化等)、第1磁性層121之厚度等而適當地設定。作為一例，於第1磁性層121之厚度為4 μm以上且20 μm以下之情形時，構成第1磁性層121之軟磁性合金粒子之平均粒徑於上述厚度尺寸下設為於厚度方向(Z軸方向)排列4個以上合金粒子之大小，例如設為1 μm以上且5 μm以下。 作為軟磁性合金粒子，除FeSiCr以外，亦可使用FeZrCr、FeSiAl、FeSiTi、FeZrAl、FeZrTi等。即，軟磁性合金粒子只要以Fe作為主成分，且包含Si、Zr及Ti之任一者以上之元素(以下，亦稱為元素L)、及除Si、Zr及Ti以外之較Fe更容易氧化之例如Cr、Al等1種以上之元素(以下，亦稱為元素M)即可。藉由使用此種磁性材料，於軟磁性合金粒子之表面穩定地形成下述之氧化膜，尤其是即便於以低溫度進行熱處理之情形時，亦能夠提高絕緣性。 再者，於FeSiCr系合金中，除Si及Cr以外之剩餘部分，除不可避免之雜質以外較佳為Fe。作為除Fe、Si及Cr以外亦可包含之金屬，可列舉Al、Mg(鎂)、Ca(鈣)、Ti、Mn(錳)、Co(鈷)、Ni(鎳)、Cu(銅)等，作為非金屬，可列舉P(磷)、S(硫)、C(碳)等。 導體圖案C11～C17配置於第1磁性層121之上。導體圖案C11～C17如圖2所示般，構成繞Z軸周圍捲繞之線圈之一部分，且經由通孔V1～V6於Z軸方向分別電性連接，藉此形成線圈部13。磁性體層ML1之導體圖案C11具有與一外部電極14電性連接之引出端部13e1，且磁性體層ML7之導體圖案C17具有與另一外部電極15電性連接之引出端部13e2。 第2磁性層122係由與第1磁性層121同種之軟磁性合金粒子(於本例中為FeCrSi合金粒子)構成。第2磁性層122隔著第1磁性層121而於Z軸方向上對向，分別配置於第1磁性層121上之導體圖案C11～C17之周圍(外周區域及內周區域)。各磁性體層ML1～ML7中之第2磁性層122之沿Z軸方向之厚度，典型而言與導體圖案C11～C17之厚度相同，但該等之厚度亦可存在差異。 於本實施形態中，第2磁性層122係由較第1磁性層121更高電阻之磁性材料構成。藉此，可穩定地確保導體圖案C11～C17與外部電極14、15之間之所需之電性絕緣特性。再者，關於構成第1磁性層121之磁性材料與構成第2磁性層122之磁性材料的不同之處將於下文進行敍述。 第3磁性層123係由與第1磁性層121同種之軟磁性合金粒子(於本例中為FeCrSi合金粒子)構成。第3磁性層123分別相當於上層之磁性體層MLU及下層之磁性體層MLD，隔著磁性體層ML1～ML7之第1磁性層121、第2磁性層122及導體圖案C11～C17(線圈部13)而於Z軸方向上對向配置。磁性體層MLU、MLD分別由複數個第3磁性層123之積層體構成，且該等積層數並無特別限定。又，磁性體層ML7之第1磁性層121亦可由位於磁性體層MLD之最上層之第3磁性層123構成。又，磁性體層MLU之最下層亦可由第1磁性層121構成。 繼而，線圈部13係由導電性材料構成，且具有與外部電極14電性連接之引出端部13e1、及與外部電極15電性連接之引出端部13e2。線圈部13係由導電膏之焙燒體構成，於本實施形態中，係由銀(Ag)膏之焙燒體構成。 線圈部13於磁性體部12之內部繞高度方向(Z軸方向)螺旋狀地捲繞。線圈部13如圖3所示般，具有分別於磁性體層ML1～ML7上形成為特定形狀之7個導體圖案C11～C17、及於Z軸方向上連接導體圖案C11～C17之總計6個通孔V1～V6，且係藉由將該等螺旋狀地一體化而構成。再者，導體圖案C12～C16相當於線圈部13之環繞部，導體圖案C11、C17相當於線圈部13之引出部。圖示之線圈部13之圈數為約5.5，但當然並不限定於此。 如圖3所示般，自Z軸方向進行觀察時，線圈部13形成為以磁性體部12之長邊方向作為長軸之橢圓形形狀。藉此，可使流經線圈部13之電流之路徑為最短，故能夠實現直流電阻之低電阻化。此處，所謂橢圓形形狀典型而言係指橢圓或長圓(使用直線將2個半圓相連而成之形狀)、圓角長方形形狀等。再者，不限定於此，線圈部13亦可為自Z軸方向觀察時之形狀為大致矩形形狀者。 [磁性體部之詳細內容] 其次，對磁性體部12之詳細內容進行說明。 於構成第1～第3磁性層121～123之軟磁性合金粒子(FeCrSi合金粒子)之表面，存在有該FeCrSi合金粒子之氧化物作為絕緣膜。各磁性層121～123內之FeCrSi合金粒子經由上述氧化物而相互結合，線圈部13附近之FeCrSi合金粒子經由上述氧化物而與線圈部13密接。上述氧化物典型而言，包含屬於磁性體之Fe3 O4 、及屬於非磁性體之Fe2 O3 、Cr2 O3 、SiO2 之至少一者。 (第1磁性層) 圖5係形成於構成第1磁性層121之軟磁性合金粒子P1之表面的第1氧化物F1之概略剖視圖，圖6係說明該第1氧化物F1之積層構造之模式圖。 第1磁性層121全體上係由原本獨立之多個軟磁性合金粒子P1彼此結合而成之集合體，或包含多個軟磁性合金粒子P1之壓粉體構成。於圖5中，將3個軟磁性合金粒子P1之界面附近放大描寫。 於至少一部分軟磁性合金粒子P1，在其周圍之至少一部分、較佳為幾乎遍及全體形成有第1氧化物F1，藉由該第1氧化物F1，可確保第1磁性層121之絕緣性。鄰接之軟磁性合金粒子P1彼此主要經由位於各軟磁性合金粒子P1之周圍的第1氧化物F1結合，結果，構成具有固定形狀之磁性體。鄰接之軟磁性合金粒子P1亦可局部地於金屬部分彼此結合。再者，無論於經由第1氧化物F1而結合之情形及於金屬部分彼此結合之情形之任一者，均較佳為實質上不包含含有有機樹脂之基質。 各個軟磁性合金粒子P1至少為至少包含鐵(Fe)及較鐵更容易氧化之2種元素(元素L及M)之合金。元素L與元素M不同，且均為金屬元素或Si。於元素L及M為金屬元素之情形時，典型而言，可列舉Cr(鉻)、Al(鋁)、Zr(鋯)、Ti(鈦)等，較佳為Cr或Al，進而較佳為包含Si或Zr。 於磁性體(第1磁性層121)全體中，Fe之含有率較佳為92.5～96 wt%。於上述範圍之情形時，可確保較高之體積電阻率。於磁性體全體中，元素L之含有率較佳為2.5～6 wt%。於磁性體全體中，元素M之含有率較佳為1.5～4.5 wt%。作為除Fe及元素L及M以外亦可包含之元素，可列舉Mn(錳)、Co(鈷)、Ni(鎳)、Cu(銅)、P(磷)、S(硫)、C(碳)等。關於磁性體全體之組成，例如可藉由對磁性體之剖面進行電漿發光分析而算出。 第1氧化物F1典型而言係由3層構造之氧化膜構成，即，自距磁性合金粒子P1較近之層(即內側)依序包含第1氧化膜F11，第2氧化膜F12及第3氧化膜F13。 第1氧化膜F11係較元素M包含更多元素L之氧化物。另一方面，第2氧化膜F12係較元素L包含更多元素M之氧化物。於本實施形態中，元素L為Si，第1氧化膜F11為SiO2 。另一方面，元素M為Cr，第2氧化膜F12為Cr2 O3 。第3氧化膜F13係較元素L及M包含更多Fe之氧化物(Fex Oy )。Fe之氧化物典型而言為屬於磁性體之Fe3 O4 、或屬於非磁性體之Fe2 O3 。 第1氧化膜F11所包含之元素L及第2氧化膜F12所包含之元素M均相當於作為軟磁性合金粒子P1之組成成分之Si及Cr擴散、析出而得者。第3氧化膜F13所包含之Fe亦同樣地，相當於作為軟磁性合金粒子P1之組成成分之Fe擴散、析出而得者。 第1磁性層121如圖5所示般，具有將軟磁性合金粒子P1彼此結合之結合部V1。結合部V1係由第3氧化膜F13之一部分構成，將複數個軟磁性合金粒子P1相互結合。藉由結合部V1之存在，可實現機械強度及絕緣性之提高。 第1磁性層121較佳為遍及其全體，鄰接之軟磁性合金粒子P1經由結合部V1而結合，但亦可部分性地存在不經由第1氧化物F1而使軟磁性合金粒子P1彼此結合之區域。進而，第1磁性層121亦可部分性地包含結合部V1及除結合部V1以外之結合部(軟磁性合金粒子P1彼此之結合部)均不存在，而僅為物理性接觸或接近之形態。進而，第1磁性層121亦可部分性地具有空隙。 第1氧化物F1亦可於形成磁性體(第1磁性層121)之前之原料粒子之階段形成，亦可於原料粒子之階段不存在或極少存在第1氧化物F1，於成形過程中產生第1氧化物F1。於對成形前之軟磁性合金粒子P1實施熱處理而獲得磁性體時，較佳為軟磁性合金粒子P1之表面部分氧化而產生第1氧化物F1，且經由該產生之第1氧化物F1使複數個軟磁性合金粒子P1結合。 尤其是，由於第1氧化膜F11以覆蓋軟磁性合金粒子P1之表面全體之方式形成，故於磁性體全體，較佳為元素L之含有率高於元素M。由於存在第1氧化膜F11，故可獲得穩定之絕緣性。又，藉由使元素M之含有率為1.5～4.5 wt%，可推定能夠抑制過度氧化，並且能夠使第1及第2氧化膜之厚度變薄。 (第2磁性層) 另一方面，圖7係形成於構成第2磁性層122之軟磁性合金粒子P2之表面的第2氧化物F2之概略剖視圖，圖8係說明該第2氧化物F2之積層構造之模式圖。 第2磁性層122亦同樣地，由多個軟磁性合金粒子P2彼此結合而成之集合體、或包含多個軟磁性合金粒子P2之壓粉體構成。於圖7中，將3個軟磁性合金粒子P2之界面附近放大描寫。 於至少一部分軟磁性合金粒子P2，在其周圍之至少一部分，較佳為幾乎遍及全體形成有第2氧化物F2，藉由該第2氧化物F2可確保第2磁性層122之絕緣性。鄰接之軟磁性合金粒子P2彼此主要經由位於各軟磁性合金粒子P2之周圍的第2氧化物F2而結合，結果，構成具有固定形狀之磁性體。鄰接之軟磁性合金粒子P2亦可局部性地於金屬部分彼此結合，但為了成為絕緣性更確實者，較佳為利用藉由第2氧化物F2而進行之結合形成磁性體。再者，無論於經由第2氧化物F2而結合之情形及於金屬部分彼此結合之情形之任一者，較佳為實質上不包含含有有機樹脂之基質。 各個軟磁性合金粒子P2至少為至少包含鐵(Fe)及較鐵更容易氧化之2種元素(元素L及M)之合金。元素L與元素M不同，且均為金屬元素或Si。於元素L及M為金屬元素之情形時，典型而言，可列舉Cr(鉻)、Al(鋁)、Zr(鋯)、Ti(鈦)等，較佳為Cr或Al，進而較佳為包含Si或Zr。 於磁性體(第2磁性層122)全體，Fe之含有率較佳為92.5～96 wt%。於上述範圍之情形時，可確保較高之體積電阻率。於磁性體全體，元素L之含有率較佳為2.5～6 wt%。於磁性體全體，元素M之含有率較佳為1.5～4.5 wt%。關於磁性體全體之組成，例如可藉由對磁性體之剖面進行電漿發光分析而算出。 作為除Fe及元素L及M以外亦可包含之元素，可列舉Mn(錳)、Co(鈷)、Ni(鎳)、Cu(銅)、P(磷)、S(硫)、C(碳)等。 第2氧化物F2典型而言係由4層構造之氧化膜構成，即包含覆蓋軟磁性合金粒子P2之第1氧化膜F21、覆蓋第1氧化膜F21之第2氧化膜F22、覆蓋第2氧化膜F22之第3氧化膜F23及覆蓋第3氧化膜F23之第4氧化膜F24。 第1氧化膜F21及第3氧化膜F23係包含元素L之氧化物，典型而言，係較元素M包含更多元素L之氧化物。另一方面，第2氧化膜F22係包含元素M之氧化物，典型而言，係較元素L包含更多元素M之氧化物。於本實施形態中，元素L為Si，第1及第3氧化膜F21、F23為SiO2 。另一方面，元素M為Cr，第2氧化膜F22為Cr2 O3 。第4氧化膜F24係較元素L包含更多Fe之氧化物(Fex Oy )。Fe之氧化物典型而言為屬於磁性體之Fe3 O4 、或屬於非磁性體之Fe2 O3 。 第1氧化膜F21所包含之元素L及第2氧化膜F22所包含之元素M均相當於作為軟磁性合金粒子P2之組成成分之Si及Cr擴散、析出而得者。第4氧化膜F24所包含之Fe亦同樣地，相當於作為軟磁性合金粒子P2之組成成分之Fe擴散、析出而得者。相對於此，構成第3氧化膜F23之元素L(Si)為如下所述般由預先形成於軟磁性合金粒子P2之表面之SiO2 之膜構成。 關於第2氧化物F2之存在，可藉由倍率約5000倍之掃描式電子顯微鏡(SEM，scanning electron microscope)之組成映射而確認。關於構成第2氧化物F2之第1～第4氧化膜F21～F24之存在，可藉由倍率約20000倍之穿透式電子顯微鏡(TEM，transmission electron microscope)之組成映射而確認。關於第1～第4氧化膜F21～F24之厚度，可藉由倍率約800000倍之TEM之能量分散式X射線分析裝置(EDS，energy dispersive spectrometer)而確認。 藉由存在第2氧化物F2，可確保磁性體全體之絕緣性。尤其是，第2氧化物F2與上述第1氧化物F1相比進而包含氧化膜(第3氧化膜F23)，故可獲得較第1氧化物F1更高之絕緣特性。 第2磁性層122如圖7所示般，具有將軟磁性合金粒子P2彼此結合之結合部V2。結合部V2係由第4氧化膜F24之一部分構成，將複數個軟磁性合金粒子P2相互結合。結合部V2之存在例如可自放大至約5000倍之SEM觀察圖像等視認到。藉由結合部V2之存在，可實現機械強度及絕緣性之提高。 第2磁性層122較佳為遍及其全體，鄰接之軟磁性合金粒子P2經由結合部V2而結合，但亦可部分性地存在不經由第2氧化物F2而軟磁性合金粒子P2彼此結合之區域。進而，第2磁性層122亦可部分性地包含結合部V2及除結合部V2以外之結合部(軟磁性合金粒子P1彼此之結合部)均不存在，而僅為物理性接觸或接近之形態。進而，第2磁性層122亦可部分性地具有空隙。 第2氧化物F2亦可於形成磁性體(第2磁性層122)之前之原料粒子之階段形成，亦可於原料粒子之階段不存在或極少存在第2氧化物F2，而於成形過程中產生第2氧化物F2。 於本實施形態中，在形成磁性體(第2磁性層122)之前之原料粒子之階段中，實施於軟磁性合金粒子P2之表面形成第3氧化膜F23之預處理。而且，於對成形前之軟磁性合金粒子P2實施熱處理而獲得磁性體(第2磁性層122)時，軟磁性合金粒子P2之表面部分氧化而產生第1氧化膜F21、第2氧化膜F22、第4氧化膜F24及結合部V2。 於原料粒子之表面形成構成第3氧化膜F23之塗佈材料的預處理之方法並無特別限定，於本實施形態中，使用利用溶膠凝膠法之塗覆製程。典型而言，將包含TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液混合、攪拌至包含軟磁性合金粒子P2、乙醇及氨水之混合液中之後，過濾、分離出軟磁性合金粒子P2，並進行乾燥，藉此，製作於表面形成有包含SiO2 膜之塗佈材料的軟磁性合金粒子P2。 此處，若一次性地將上述處理液混合至上述混合液中，則均勻成核佔優勢，SiO2 粒子於溶液中成核、晶粒成長而形成凝集體，該凝集體附著於軟磁性合金粒子P2之表面，由此無法穩定地形成塗佈材料。因此，於本實施形態中，藉由將上述處理液一面分為複數次滴加至上述混合液中一面進行混合，抑制SiO2 粒子之均勻成核，使軟磁性合金粒子P2表面上之不均勻成核佔優勢，藉此，能夠於軟磁性合金粒子P2之表面穩定地形成塗佈材料。 第3氧化膜F23(塗佈材料)之厚度可根據處理液所包含之TEOS(Tetraethyl orthosilicate，正矽酸乙酯)之量進行調整，TEOS之量越多越能夠獲得較厚之膜。第3氧化膜F23之厚度並無特別限定，較佳為1 nm以上且20 nm以下。於厚度未達1 nm之情形時，第3氧化膜F23之覆蓋性變差，難以實現絕緣特性之提高。又，若厚度超過20 nm，則有因軟磁性合金粒子P2之填充率降低而磁特性降低之傾向。 又，第3氧化膜F23之厚度可為與第1氧化膜F21之厚度同等或其以上，亦可小於第1氧化膜F21之厚度。藉由使第3氧化膜F23之厚度成為與第1氧化膜F21之厚度同等或其以上，與不存在第3氧化膜F23之情形相比，能夠有效地提高絕緣特性。另一方面，藉由使第3氧化膜F23之厚度小於第1氧化膜F21之厚度，能夠抑制由第3氧化膜F23之存在而導致之磁特性(相對磁導率等)之降低。 尤其是，由於第1氧化膜F21以覆蓋軟磁性合金粒子P2之表面全體之方式形成，故於磁性體全體，較佳為元素L之含有率高於元素M。由於存在第1氧化膜F21，故可獲得穩定之絕緣性。又，藉由使元素M之含有率為1.5～4.5 wt%，能夠抑制過度氧化，並且使第1及第2氧化膜F21、F22之厚度變薄。又，此處所獲得之第1、第2、第3及第4氧化膜F21～F24分別為非晶質、非晶質、非晶質及結晶質。第1、第2、第3及第4氧化膜藉由交替地形成性質不同之膜，而成為兼具絕緣性及氧化抑制之氧化膜，且藉由不具有所需以上之厚度，而可獲得提高相對磁導率並且兼具絕緣性之磁性體。 (第3磁性層) 構成第3磁性層123之磁性材料可與第1磁性層121以同樣之方式構成，或亦可與第2磁性層122以同樣之方式構成。典型而言，第3磁性層123係由具有與第1磁性層121同等或其以上之磁特性之磁性材料構成。 [線圈零件之製造方法] 繼而，對線圈零件10之製造方法進行說明。圖9A～C係說明線圈零件10之磁性體層ML1～ML7之製造方法的主要部分之概略剖視圖。 磁性體層ML1～ML7之製造方法具有第1磁性層121之製作步驟、導體圖案C10之形成步驟、及第2磁性層122之製作步驟。 (第1磁性層之製作) 於製作第1磁性層121時，使用刮刀或模嘴塗佈機等塗佈機(省略圖示)，將預先準備之磁性體膏(漿料)塗覆於塑膠製之基礎膜(省略圖示)之表面。繼而，使用熱風乾燥機等乾燥機(省略圖示)，以約80℃、約5分鐘之條件乾燥該基礎膜，分別製作與磁性體層ML1～ML7對應之第1～第7磁性片材121S(參照圖9A)。該等磁性片材121S分別形成為能夠獲得多個第1磁性層121之尺寸。 此處所使用之磁性體膏之組成為，FeCrSi合金粒子群(軟磁性合金粒子P1)為75～85 wt%，丁基卡必醇(溶劑)為13～21.7 wt%，聚乙烯丁醛(黏合劑)為2～3.3 wt%，且根據FeCrSi粒子群之平均粒徑(中值直徑)而進行調整。例如，於FeCrSi合金粒子群之平均粒徑(中值直徑)為3 μm以上之情形時，分別設為85 wt%、13 wt%、2 wt%，於1.5 μm以上且未達3 μm未達之情形時，分別設為80 wt%、17.3 wt%、2.7 wt%，於未達1.5 μm之情形時，分別設為75 wt%、21.7 wt%、3.3 wt%。FeCrSi合金粒子群之平均粒徑係根據第1磁性層121之厚度等而選擇。FeCrSi合金粒子群係例如藉由霧化法而製造。 第1磁性層121係以4個以上之合金磁性粒子(FeCrSi合金粒子)沿厚度方向排列之厚度而製作成，其厚度為例如5 μm以上且25 μm以下。於本實施形態中，合金磁性粒子之平均粒徑於體積基準下，d50(中值直徑)較佳為1～4 μm。合金磁性粒子之d50係使用利用雷射繞射散射法之粒徑、粒度分佈測定裝置(例如，日機裝公司製造之Microtrac)而測定。 繼而，使用沖切加工機或雷射加工機等穿孔機(省略圖示)，於與磁性體層ML1～ML6對應之第1～第6磁性片材121S，以特定配列形成與通孔V1～V6(參照圖3)對應之貫通孔(省略圖示)。關於貫通孔之配列，以於積層第1～第7磁性片材121S時，於填充有導體之貫通孔及導體圖案C11～C17形成有內部導體之方式設定。 (導體圖案之形成) 繼而，如圖9B所示般，於第1～第7磁性片材121S上形成導體圖案C11～C17。 導體圖案C11使用網版印刷機或凹版印刷機等印刷機(省略圖示)，將預先準備之導體膏印刷至與磁性體層ML1對應之第1磁性片材121S之表面。進而，於導體圖案C11之形成時，將上述導體膏填充至與通孔V1對應之貫通孔。繼而，使用熱風乾燥機等乾燥機(省略圖示)，以約80℃、約5分鐘之條件乾燥第1磁性片材121S，而以特定配列製作與導體圖案C11對應之第1印刷層。 關於導體圖案C12～C17及通孔V2～V6，亦使用與上述相同之方法製作。藉此，於與磁性體層ML2～ML7對應之第2～第7磁性片材121S之表面以特定配列製作與導體圖案C12～C17對應之第2～第7之印刷層。 此處所使用之導體膏之組成為Ag粒子群為85 wt%，丁基卡必醇(溶劑)為13 wt%，聚乙烯丁醛(黏合劑)為2 wt%，且Ag粒子群之d50(中值直徑)為約5 μm。 (第2磁性層之製作) 繼而，如圖6C所示般，於第1～第7磁性片材121S之上形成第2磁性層122。 於製作第2磁性層122時，首先，藉由實施上述預處理而準備於表面形成有包含氧化矽膜之塗佈材料(第3氧化膜F23)之軟磁性合金粒子P2。繼而，使用網版印刷機或凹版印刷機等印刷機(省略圖示)，將包含該軟磁性合金粒子之FeCrSi合金粒子群之磁性體膏(漿料)塗覆於第1～第7磁性片材121S上之導體圖案C11～C17之周圍。其次，使用熱風乾燥機等乾燥機(省略圖示)，以約80℃、約5分鐘之條件乾燥該磁性體膏。 此處所使用之磁性體膏之組成為FeCrSi合金粒子群為85 wt%，丁基卡必醇(溶劑)為13 wt%，聚乙烯丁醛(黏合劑)為2 wt%。 第2磁性層122之厚度係以成為與導體圖案C11～C17之厚度相同或為20%以內之厚度之差之方式而進行調整，在積層方向上大致形成同一平面，從而於在各磁性層不產生階差且不產生積層偏移等之情況下獲得磁性體部12。第2磁性層122係以3個以上之合金磁性粒子(FeCrSi合金粒子)沿厚度方向排列之厚度製作成。其厚度為例如4 μm以上且20 μm以下。構成第2磁性層122之軟磁性合金粒子P2之平均粒徑可與構成第1磁性層121之軟磁性合金粒子P1之平均粒徑相同，或亦可較其大或較其小。於本實施形態中，平均粒徑為1～4 μm。因軟磁性合金粒子P2之平均粒徑越小則比表面積越增加，故由第2氧化物F2所致之軟磁性合金粒子P2之絕緣效果增高。 以上述之方式製作與磁性體層ML1～ML7對應之第1～第7片材(參照圖9C)。 (第3磁性層之製作) 於製作第3磁性層123時，使用刮刀或模嘴塗佈機等塗佈機(省略圖示)，將預先準備之磁性體膏(漿料)塗覆於塑膠製之基礎膜(省略圖示)之表面。繼而，使用熱風乾燥機等乾燥機(省略圖示)，以約80℃、約5分鐘之條件乾燥該基礎膜，分別製作與構成磁性體層MLU、MLD之第3磁性層123對應之磁性片材。該等磁性片材分別形成為能夠獲得多個第3磁性層123之尺寸。 此處所使用之磁性體膏之組成為FeCrSi合金粒子群為85 wt%，丁基卡必醇(溶劑)為13 wt%，聚乙烯丁醛(黏合劑)為2 wt%。 第3磁性層123如上所述般，以磁性體層MLU、MLD之各自之厚度成為例如50 μm以上且120 μm以下之方式，根據其積層數而設定。於本實施形態中，構成第3磁性層123之合金磁性粒子之平均粒徑可與構成第1磁性層121之合金磁性粒子之平均粒徑及構成第2磁性層122之合金磁性粒子之平均粒徑相同，或亦可較其大或較其小。於平均粒徑相同之情形時，可提高相對磁導率，於較小之情形時，可使第3磁性層123變薄。 (積層及切斷) 繼而，使用吸附搬送機及壓製機(均省略圖示)，將第1～第7片材(與磁性體層ML1～ML7對應)及第8片材群(與磁性體層MLU、MLD對應)按照圖3所示之順序層疊並進行熱壓接而製作積層體。 繼而，使用切割機或雷射加工機等切斷機(省略圖示)，將積層體切斷為零件本體之尺寸，從而製作加工處理前晶片(包含加熱處理前之磁性體部及線圈部)。 (脫脂及氧化物之形成) 繼而，使用焙燒爐等加熱處理機(省略圖示)，於大氣等氧化性環境中，將多個加熱處理前晶片一併進行加熱處理。該加熱處理包含脫脂製程及氧化物形成製程，脫脂製程係於約500℃、約1小時之條件下實施，氧化物形成製程係於約700℃、約5小時之條件下實施。 實施脫脂製程之前之加熱處理前晶片，於加熱處理前之磁性體內之FeSiCr合金粒子之間存在多個微細間隙，於該微細間隙中包含有黏合劑等。然而，該等黏合劑於脫脂製程中消失，故於脫脂製程結束後，該微細間隙變成孔隙(空隙)。又，於加熱處理前之線圈部內之Ag粒子之間亦存在多個微細間隙，於該微細間隙中包含有黏合劑等，但該等黏合劑於脫脂製程中消失。 於繼脫脂製程之後之氧化物形成製程中，加熱處理前之磁性體內之FeSiCr合金粒子密集而製作磁性體部12(參照圖1、圖2)，同時於FeSiCr合金粒子各自之表面形成該粒子之氧化物(第1氧化物F1及第2氧化物F2)。又，將加熱處理前之線圈部內之Ag粒子群燒結而製作線圈部13(參照圖1、圖2)，藉此製作零件本體11。 此時，關於第1磁性層121，於軟磁性合金粒子P1之表面形成包含第1～第3氧化膜F11～F13之第1氧化物F1，且經由結合部V1而將軟磁性粒子P1彼此結合(參照圖5)。另一方面，關於第2磁性層122，於軟磁性合金粒子P2之表面形成包含第1～第4氧化膜F21～F24之第2氧化物F2，且經由結合部V2而將軟磁性合金粒子P2彼此結合(參照圖7)。 (外部電極之形成) 繼而，使用浸漬塗佈機或輥塗佈機等塗佈機(省略圖示)，將預先準備之導體膏塗佈於零件本體11之長度方向兩端部，使用焙燒爐等加熱處理機(省略圖示)，於約650℃、約20分鐘之條件下對其進行烘烤處理，藉由該烘烤處理使溶劑及黏合劑消失及使Ag粒子群燒結，從而製作外部電極14、15(參照圖1、圖2)。 此處所使用之外部電極14、15用之導體膏之組成為Ag粒子群為85 wt%以上，且除Ag粒子群以外，含有玻璃、丁基卡必醇(溶劑)、聚乙烯丁醛(黏合劑)，且Ag粒子群之d50(中值直徑)為約5 μm。 最後，進行鍍覆。鍍覆係使用通常之電鍍而進行，Ni及Sn之金屬膜附著於此前將Ag粒子群燒結而形成之外部電極14、15。如此，能夠獲得線圈零件10。 於本實施形態之線圈零件10中，構成第2磁性層122之磁性材料具有軟磁性合金粒子P2及形成於其表面之第2氧化物F2。於上述磁性材料中，軟磁性合金粒子P2之表面由於被第1～第4氧化膜F21～F24覆蓋，故獲得較構成第1磁性層121之磁性材料更高之絕緣特性。藉此，可提高線圈零件10之絕緣特性，且亦能夠容易地應對大電流化。 進而，第2磁性層122由於獲得較第1磁性層121更高之絕緣特性，故即便軟磁性合金粒子P2間之距離變短，亦可確保良好之絕緣特性。因此，即便於追加實施提高磁性材料之壓粉密度(第2磁性層122之相對密度)之處理而實現該磁特性之提高之情形時，亦能夠穩定地確保所需之絕緣特性。 [實施例] 以下，對本發明之實施例進行說明。 (實施例1) 耗時50分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、及特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。製作該軟磁性合金粒子之壓粉體(磁性體)，對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 壓粉體之製作條件如下所述。 將100重量份之合金粒子與1.5重量份之PVA(polyvinyl alcohol，聚乙烯醇)黏合劑一同攪拌混合，且添加0.5重量份之硬脂酸Zn作為潤滑劑。其後，以6～18 ton/cm2 之成形壓力成形為用於下述各評價之形狀。此時，成形壓力係以磁性體中之軟磁性合金粒子之填充率成為80 vol%之方式進行調節。繼而，於500℃、1小時之條件下對所獲得之壓粉體進行脫脂，於大氣環境下(氧化環境下)以700℃進行5小時之熱處理，獲得磁性體。 為了測定相對磁導率(M)，製造外徑8 mm、內徑4 mm、厚度1.3 mm之環形之磁性體。於該磁性體上捲繞20圈包含直徑0.3 mm之胺基甲酸酯被覆銅線之線圈，而獲得測定用試樣。使用L Chronometer(安捷倫科技公司製造：4285A)，以測定頻率10 MHz對磁性體之相對磁導率進行測定。 體積電阻率係依據JIS-K6911而進行測定。其中，製造外形f7.0 mm×厚度0.5～0.8 mm之圓板狀之磁性體作為測定試樣。於上述熱處理後，藉由濺鍍而於圓板狀之兩個底面(底面之整個面)形成Au膜。對Au膜之兩表面施加3.6 V(60 V/cm)之電壓。根據此時之電阻值算出體積電阻率。 為了測定絕緣破壞電壓，製造外形f7.0 mm×厚度0.5～0.8 mm之圓板狀之磁性體作為測定試樣。於上述熱處理後，藉由濺鍍而於圓板狀之兩個底面(底面之整個面)形成Au膜。對Au膜之兩表面施加電壓，且進行I-V測定。慢慢提高所施加之電壓，將於電流密度成為0.01 A/cm2 之時間點時之施加電壓視作破壞電壓。 為了評價機械強度，測定3點彎曲破斷應力。圖10係說明3點彎曲破斷應力之測定的模式性說明圖。如圖示般對測定對象物施加負載，測定出測定對象物破斷時之負載W。考慮到彎曲力矩M及斷面二次矩I，而根據下式算出3點彎曲破斷應力σb。 σb＝(M/l)×(h/2)＝3WL/2bh2 關於用於測定3點彎曲破斷應力之試驗片，製造長度50 mm、寬度10 mm、厚度4 mm之板狀之磁性體作為測定試樣。 測定形成於磁性體中之合金粒子之表面的氧化膜(相當於圖7中之第1～第4氧化膜F21～F24)之成分及厚度。測定中使用搭載EDS之STEM(scanning transmission electron microscope，掃描穿透式電子顯微鏡)，藉由STEM-EDS法確定氧化膜之成分，且藉由STEM-高角度環形暗場(HAADF，high angle annular dark field)法測量氧化膜之厚度。於即將測定之前，利用聚焦離子束裝置(FIB，focused ion beam)以成為50～100 nm之方式製作片材試樣，於電子束直徑為0.2～1.5 nm之範圍內，分別藉由EDS之線分析法測量氧化膜之成分、藉由HAADF法測量氧化膜之厚度。測定各氧化膜之厚度之場所為於合金粒子彼此未結合之部分進行，且向合金粒子之表面引垂線。繼而，於該垂線上自合金粒子之表面向外側進行觀察，將氧之存在比率為5%以下之部分設為合金粒子之表面。進而，自合金粒子之表面向外側進行觀察，將元素L(Si、Zr、Hf或Ti)之量多於元素M(Cr或Al)之範圍設為元素L之氧化膜(第1氧化膜)之厚度。其後，以同樣之方式繼續向外側觀察，將元素M之量多於元素L之範圍設為元素M之氧化膜(第2氧化膜)，且將元素L之量多於元素M之範圍設為元素L之氧化膜(第3氧化膜)。進而，關於Fe之氧化膜(第4氧化膜)，設為與元素L相比Fe之量較多之範圍。 將測定結果示於表1及表2。相對磁導率為27，體積電阻率為2.7×103 [Ω･cm]，絕緣破壞電壓為1.3×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為15 nm(成分Si)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例2) 耗時10分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度1 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為36，體積電阻率為7.1×101 [Ω･cm]，絕緣破壞電壓為5.3×10-3 [MV/cm]，強度為14[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為1 nm(成分Si)，第4氧化膜之厚度為60 nm(成分Fe)。 (實施例3) 耗時15分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度5 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為34，體積電阻率為3.2×102 [Ω･cm]，絕緣破壞電壓為7.8×10-3 [MV/cm]，強度為12[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為5 nm(成分Si)，第4氧化膜之厚度為40 nm(成分Fe)。 (實施例4) 耗時20分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度11 nm之包含SiO2 之膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為30，體積電阻率為3.2×102 [Ω･cm]，絕緣破壞電壓為7.8×10-3 [MV/cm]，強度為11[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為11 nm(成分Si)，第4氧化膜之厚度為30 nm(成分Fe)。 (實施例5) 耗時50分鐘，將包含特定量之四異丙氧基鋯、Zr(O-i-C3 H7 )4 、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含ZrO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為27，體積電阻率為2.5×103 [Ω･cm]，絕緣破壞電壓為1.1×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為15 nm(成分Zr)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例6) 耗時50分鐘，將包含特定量之四異丙氧基鉿、Hf[OCH(CH3 )2 ]4 、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含HfO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為26，體積電阻率為2.4×103 [Ω･cm]，絕緣破壞電壓為1.2×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為15 nm(成分Hf)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例7) 耗時50分鐘，將包含特定量之四異丙氧基鈦、Ti[OCH(CH3 )2 ]4 、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含TiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為27，體積電阻率為2.5×103 [Ω･cm]，絕緣破壞電壓為1.1×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為15 nm(成分Ti)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例8) 耗時50分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiAl合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為25，體積電阻率為3.0×103 [Ω･cm]，絕緣破壞電壓為1.1×10-2 [MV/cm]，強度為11[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為15 nm(成分Al)，第3氧化膜之厚度為15 nm(成分Si)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例9) 耗時50分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeZrCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度15 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為27，體積電阻率為2.0×103 [Ω･cm]，絕緣破壞電壓為1.1×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Zr)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為15 nm(成分Si)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例10) 耗時70分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeZrCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度20 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為25，體積電阻率為4.1×103 [Ω･cm]，絕緣破壞電壓為1.1×10-2 [MV/cm]，強度為10[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為20 nm(成分Si)，第4氧化膜之厚度為20 nm(成分Fe)。 (實施例11) 耗時90分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeZrCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度24 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為21，體積電阻率為5.0×103 [Ω･cm]，絕緣破壞電壓為8.0×10-3 [MV/cm]，強度為8[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為24 nm(成分Si)，第4氧化膜之厚度為15 nm(成分Fe)。 (實施例12) 耗時10分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)2 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度1 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為21，體積電阻率為8.0×101 [Ω･cm]，絕緣破壞電壓為6.6×10-3 [MV/cm]，強度為12[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為1 nm(成分Si)，第4氧化膜之厚度為60 nm(成分Fe)。 (實施例13) 耗時10分鐘，將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液分別等量地滴加至包含平均粒徑(D50)1 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中進行混合、攪拌之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度1 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為10，體積電阻率為1.0×102 [Ω･cm]，絕緣破壞電壓為1.2×10-2 [MV/cm]，強度為13[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為1 nm(成分Si)，第4氧化膜之厚度為60 nm(成分Fe)。 (比較例) 將包含特定量之TEOS(四乙氧基矽烷，Si(OC2 H5 )4 )、乙醇及水之處理液一次性全部混合、攪拌至包含平均粒徑(D50)6 μm之軟磁性合金粒子(FeSiCr合金粒子)、特定量之乙醇及氨水之混合液中之後，過濾、分離出軟磁性合金粒子，並進行乾燥，藉此，製作於表面形成有厚度30 nm之包含SiO2 膜之塗佈層的軟磁性合金粒子。於與實施例1相同之條件下，製作該軟磁性合金粒子之壓粉體(磁性體)，且對該等之相對磁導率(μ)、體積電阻率[Ω･cm]、絕緣破壞電壓(BVD)[MV/cm]及強度[kgf/mm2 ]進行評價。 將測定結果示於表1及表2。相對磁導率為20，體積電阻率為1.1×101 [Ω･cm]，絕緣破壞電壓為7.0×10-4 [MV/cm]，強度為7[kgf/mm2 ]。又，第1氧化膜之厚度為5 nm(成分Si)，第2氧化膜之厚度為11 nm(成分Cr)，第3氧化膜之厚度為71 nm，其成分為以Fe為主成分且混合存在有Si及Cr者。再者，無法確認第4氧化膜。 [表1]

Figure 108115369-A0304-0001
[表2]
Figure 108115369-A0304-0002
 如表1、2所示般，根據將處理液每次特定量地滴加混合至合金粒子之溶液中而形成塗佈材料之實施例1～11，可獲得較將處理液一次性地混合至上述溶液中而形成塗佈材料之比較例更高之絕緣破壞特性及更高之相對磁導率。可推定其原因在於，第3氧化膜(塗佈材料)均質地形成於合金粉末之表面，雖然氧化膜之厚度較薄，但幾乎不存在缺陷。又，可推定兼具第1氧化膜及第3氧化膜亦有助於絕緣破壞特性，從而能夠使作為第1～第4氧化膜全體之厚度變薄。 此處，若將實施例1與比較例進行比較，則其結果為：作為於合金粒子形成包含Si氧化膜之塗佈層之預處理，於使用包含乙醇、氨水、TEOS、水之混合液之方面相同。然而，因該混合液之製備方法而導致形成於合金粒子表面之SiO2 膜之形態大為不同的結果。 即，於將合金粒子、乙醇、氨水、TEOS及水一次性混合之比較例之處理方法中，如上所述般，SiO2 粒子於溶液中成核、晶粒成長而形成凝集體且該凝集體附著於合金粒子之表面的均勻成核佔優勢。其結果為，SiO2 之微粒子無法覆蓋合金粒子全體而部分地附著於表面，從而無法提高軟磁性合金粒子之絕緣耐壓特性。 圖11係模式性表示於將合金粒子、乙醇、氨水、TEOS及水一次性混合之比較例之情形時之形成於軟磁性合金粒子之表面的SiO2 微粒子之狀態之粒子剖視圖。再者，於藉由製備上述混合液而進行SiO2 微粒子之形成之情形時，使用5萬倍左右之倍率之高解析度TEM對藉由均勻成核及晶粒成長而獲得之SiO2 粒子進行觀察之結果，例如觀察到呈條紋狀之莫而干擾紋。該莫而干擾紋為結晶之格紋，由於觀察到此現象，故藉由比較例之處理方法而獲得之凝集體為結晶性。 與此相對，根據將包含TEOS、乙醇及水之處理液一面分複數次滴加一面混合至包含合金粒子、乙醇及氨水之混合液中之實施例1之處理方法，抑制均勻成核，而使於合金粒子表面之不均勻成核佔優勢，故合金粒子之表面之塗佈層即便為未達25 nm之厚度，亦以穩定且均勻之厚度形成。藉由使用該方法，塗佈層膜厚可利用TEOS之投入量而以單奈米級進行控制，例如即便為1 nm之厚度，亦能夠實現穩定之塗膜之形成。 圖12係模式性表示於藉由實施例1而於軟磁性合金粒子上形成塗佈層之情形時的塗佈層之狀態之粒子剖視圖。又，使用5萬倍程度之倍率之高解析度TEM對藉由實施例1而形成之塗佈層進行觀察之結果，例如未觀察到呈條紋狀之莫而干擾紋。由於未觀察到該莫而干擾紋，故可確認實施例1之塗佈層為非晶質。通常非晶質之SiO2 之絕緣電阻值較結晶性之SiO2 之電阻值高2～3位數左右。因此，於實施例1中所塗佈之SiO2 之膜厚即便為例如1 nm之厚度，亦能夠具有較比較例更高之絕緣耐壓特性。進而，由於實施例1～11之塗佈層之厚度為24 nm以下而較薄，故藉由熱處理，鐵(Fe)自合金粒子向塗佈層之外側擴散而穩定地形成第4氧化膜。藉此，可實現絕緣特性之進一步提高。 如此，實施例1與比較例1由於作為預處理之氧化膜之形成方法大為不同，故所獲得之氧化膜之膜質大為不同。該氧化膜之膜質之不同之處體現為熱處理後之壓粉體之絕緣耐壓特性及強度之不同。 根據上述評價，實施例1較實施例8更能夠提高相對磁導率。可預測其原因在於，A1較Cr更容易產生氧化反應，故因該影響而略影響到熱處理後之填充率。就能夠提高相對磁導率之方面而言，元素M較佳為Cr。又，實施例1較實施例5及6更能夠提高絕緣破壞特性。可預測其原因在於，即便為與Zr、Hf相同厚度之氧化膜，Si氧化膜之均勻性亦較高而成為缺陷較少之氧化膜。 尤其是，關於第1～第4氧化膜之厚度，於設為第1＜第3＜第4之順序之厚度之情形時(實施例1、4～9)，可進一步提高絕緣性。於相同大小之軟磁性合金粒子且設為第3≦第1＜第4之情形時(實施例2、3)，可提高相對磁導率。第4氧化膜填埋藉由將黏合劑脫脂而產生之空隙，且即便將其厚度增厚，亦不會大幅度降低相對磁導率，由於填埋空隙之作用而可提高強度，又，可減少水等自外部浸透，從而提高可靠性。又，關於實施例5、6、7之第1及第2氧化膜，可知僅由軟磁性合金粒子之成分構成，且表示各氧化膜獨立地形成。 又，於實施例11中，觀察到相對磁導率較實施例10進一步降低，成為略微超過比較例之值。可預測此係由於過度形成第3氧化膜所致。又，於此處之實施例中，不使第3氧化膜之厚度薄於1 nm。於未達1 nm之情形時，無法形成覆蓋軟磁性合金粒子之表面般之膜。關於由形成第3氧化膜之元素L所形成之氧化物，可預測作為氧化物之大小為0.5 nm以上，由於該大小之氧化物連續排列，故需要設為1 nm以上之氧化膜。因此，第3氧化膜較佳為1 nm以上且20 nm以下。 相對於第3氧化膜之厚度同為1 nm之實施例2使用6 μm之合金粒子，於實施例12、13中分別使用2 μm與1 μm之合金粒子。雖然因合金粒子微細化而相對磁導率降低，但藉由使用與實施例2相同之方法進行處理，可不管合金粒子之粒徑而形成如圖12所示般之穩定且均勻厚度之塗佈層，故而能夠提高絕緣破壞特性。與此相對，於將合金粒子、乙醇、氨水、TEOS及水一次性混合之比較例之處理方法中，雖藉由使SiO2 粒子之凝集體附著於合金粒子表面而確保絕緣破壞特性，但若合金粒子與SiO2 粒子之粒徑差變小，則難以緻密地覆蓋合金粒子表面，無法提高絕緣破壞特性。 又，即便於FeSiAl系、FeZrCr系之各磁性體，亦確認到能夠獲得與FeSiCr系磁性體同樣之絕緣特性。又，於塗佈材料之成分為Zr、Hf、Ti之情形時，亦確認到能夠獲得與具有Si成分之塗佈材料之磁性體同樣之絕緣特性。 以上，對本發明之實施形態進行了說明，但本發明並不僅限定於上述實施形態，當然可添加各種變更。 例如，於以上實施形態中，僅對將本發明之磁性材料應用於第2磁性層122之例進行了說明，但並不限定於此，本發明亦可應用於第1磁性層121、第3磁性層123、或第1～第3磁性層之至少2者。 又，於以上之實施形態中，作為磁性材料，列舉構成線圈零件或積層電感器之磁芯之磁性體為例而進行了說明，但並不限定於此，本發明亦可應用於在馬達、致動器、產生器、電抗器、扼流圏等電磁零件使用之磁性體。Hereinafter, the embodiments of the present invention will be described with reference to the drawings. Fig. 1 is an overall perspective view showing a coil component (multilayer inductor) as an electronic component according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line AA in Fig. 1. [Entire configuration of the coil component] The coil component 10 of the present embodiment has a component body 11 and a pair of external electrodes 14, 15 as shown in FIG. The component body 11 is formed in a rectangular parallelepiped shape having a width W in the X-axis direction, a length L in the Y-axis direction, and a height H in the Z-axis direction. A pair of external electrodes 14 and 15 are provided on two end faces of the component body 11 facing each other in the longitudinal direction (Y-axis direction). The size of each part of the part body 11 is not particularly limited. In this embodiment, the length L is 1.6-2 mm, the width W is 0.8-1.2 mm, and the height H is 0.4-0.6 mm. As shown in FIG. 2, the component body 11 has a rectangular parallelepiped magnetic body part 12 and a spiral coil part 13 (internal conductor) covered by the magnetic body part 12. FIG. 3 is an exploded perspective view of the component body 11. Fig. 4 is a cross-sectional view taken along line BB in Fig. 1. As shown in FIG. 3, the magnetic body part 12 has a structure in which a plurality of magnetic body layers MLU, ML1 to ML7, and MLD are laminated in the height direction (Z-axis direction) to be integrated. The magnetic layers MLU and MLD constitute a covering layer (third magnetic layer) above and below the magnetic body portion 12. The magnetic layers ML1 to ML7 constitute a conductor layer including the coil portion 13, and as shown in FIG. 4, each has a first magnetic layer 121, a second magnetic layer 122, and conductor patterns C11 to C17. The first magnetic layer 121 is formed as an inter-conductor layer interposed between adjacent upper and lower conductor patterns C11 to C17. The first magnetic layer 121 uses soft magnetic alloy particles. As the soft magnetic alloy particles, in this embodiment, for example, FeSiCr-based alloy magnetic particles are used. The composition of the soft magnetic alloy particles is typically 1 to 5 wt% for Cr, 2 to 10 wt% for Si, and Fe except for impurities, and the rest is 100 wt% as a whole. The average particle size (median diameter) in the case of the particle size based on the volume of soft magnetic alloy particles can be based on the target magnetic characteristics (relative permeability, inductance, saturation magnetization, etc.), the first magnetic layer 121 The thickness and so on are appropriately set. As an example, when the thickness of the first magnetic layer 121 is 4 μm or more and 20 μm or less, the average particle diameter of the soft magnetic alloy particles constituting the first magnetic layer 121 is set in the thickness direction (Z Axial direction) The size of arranging four or more alloy particles is, for example, 1 μm or more and 5 μm or less. As the soft magnetic alloy particles, in addition to FeSiCr, FeZrCr, FeSiAl, FeSiTi, FeZrAl, FeZrTi, etc. may also be used. That is, as long as the soft magnetic alloy particles have Fe as the main component, and contain any one or more elements of Si, Zr, and Ti (hereinafter, also referred to as element L), and other than Si, Zr, and Ti, it is easier than Fe. For example, one or more elements (hereinafter, also referred to as element M) such as Cr and Al may be oxidized. By using such a magnetic material, the following oxide film is stably formed on the surface of the soft magnetic alloy particles, and the insulation can be improved especially even when the heat treatment is performed at a low temperature. Furthermore, in the FeSiCr-based alloy, the remainder other than Si and Cr is preferably Fe except for unavoidable impurities. Examples of metals that can be included in addition to Fe, Si, and Cr include Al, Mg (magnesium), Ca (calcium), Ti, Mn (manganese), Co (cobalt), Ni (nickel), Cu (copper), etc. As non-metals, P (phosphorus), S (sulfur), C (carbon), etc. can be cited. The conductor patterns C11 to C17 are arranged on the first magnetic layer 121. As shown in FIG. 2, the conductor patterns C11 to C17 constitute part of a coil wound around the Z axis, and are electrically connected in the Z axis direction through the through holes V1 to V6, thereby forming the coil portion 13. The conductor pattern C11 of the magnetic layer ML1 has a lead end 13e1 electrically connected to an external electrode 14, and the conductor pattern C17 of the magnetic layer ML7 has a lead end 13e2 electrically connected to the other external electrode 15. The second magnetic layer 122 is composed of soft magnetic alloy particles of the same kind as the first magnetic layer 121 (FeCrSi alloy particles in this example). The second magnetic layer 122 opposes in the Z-axis direction with the first magnetic layer 121 interposed therebetween, and is respectively arranged around the conductor patterns C11 to C17 on the first magnetic layer 121 (outer peripheral area and inner peripheral area). The thickness of the second magnetic layer 122 in the Z-axis direction in each of the magnetic layers ML1 to ML7 is typically the same as the thickness of the conductor patterns C11 to C17, but these thicknesses may also be different. In this embodiment, the second magnetic layer 122 is made of a magnetic material with higher resistance than the first magnetic layer 121. Thereby, the required electrical insulation characteristics between the conductor patterns C11 to C17 and the external electrodes 14, 15 can be ensured stably. Furthermore, the difference between the magnetic material constituting the first magnetic layer 121 and the magnetic material constituting the second magnetic layer 122 will be described below. The third magnetic layer 123 is composed of soft magnetic alloy particles of the same kind as the first magnetic layer 121 (FeCrSi alloy particles in this example). The third magnetic layer 123 corresponds to the upper magnetic layer MLU and the lower magnetic layer MLD, respectively. The first magnetic layer 121, the second magnetic layer 122, and the conductor patterns C11 to C17 (coil part 13) of the magnetic layers ML1 to ML7 are interposed. And they are arranged opposite to each other in the Z-axis direction. The magnetic layers MLU and MLD are each composed of a laminated body of a plurality of third magnetic layers 123, and the number of the laminated layers is not particularly limited. In addition, the first magnetic layer 121 of the magnetic layer ML7 may be composed of the third magnetic layer 123 located on the uppermost layer of the magnetic layer MLD. In addition, the lowermost layer of the magnetic layer MLU may be composed of the first magnetic layer 121. Then, the coil portion 13 is made of a conductive material, and has a lead end 13e1 electrically connected to the external electrode 14 and a lead end 13e2 electrically connected to the external electrode 15. The coil portion 13 is composed of a calcined body of conductive paste, and in this embodiment, is composed of a calcined body of silver (Ag) paste. The coil portion 13 is spirally wound around the height direction (Z-axis direction) inside the magnetic body portion 12. As shown in FIG. 3, the coil portion 13 has 7 conductor patterns C11 to C17 each formed in a specific shape on the magnetic layers ML1 to ML7, and a total of 6 through holes connecting the conductor patterns C11 to C17 in the Z-axis direction V1 to V6 are formed by spirally integrating these. In addition, the conductor patterns C12 to C16 correspond to the surrounding portions of the coil portion 13, and the conductor patterns C11 and C17 correspond to the lead portions of the coil portion 13. The number of turns of the coil portion 13 shown in the figure is approximately 5.5, but of course it is not limited to this. As shown in FIG. 3, when viewed from the Z-axis direction, the coil portion 13 is formed in an elliptical shape with the longitudinal direction of the magnetic body portion 12 as the major axis. As a result, the path of the current flowing through the coil portion 13 can be made shortest, so that the DC resistance can be reduced. Here, the elliptical shape typically refers to an ellipse or an oblong circle (a shape formed by connecting two semicircles using a straight line), a rectangular shape with rounded corners, and the like. In addition, it is not limited to this, and the shape of the coil part 13 when viewed from the Z-axis direction may be a substantially rectangular shape. [Details of the magnetic body part] Next, the details of the magnetic body part 12 will be described. On the surface of the soft magnetic alloy particles (FeCrSi alloy particles) constituting the first to third magnetic layers 121 to 123, there is an oxide of the FeCrSi alloy particles as an insulating film. The FeCrSi alloy particles in each of the magnetic layers 121 to 123 are bonded to each other via the above oxide, and the FeCrSi alloy particles in the vicinity of the coil portion 13 are in close contact with the coil portion 13 via the above oxide. The above-mentioned oxide typically contains at least one of Fe 3 O 4 , which is a magnetic body, and Fe 2 O 3 , Cr 2 O 3 , and SiO 2, which is a non-magnetic body. (First Magnetic Layer) FIG. 5 is a schematic cross-sectional view of the first oxide F1 formed on the surface of the soft magnetic alloy particles P1 constituting the first magnetic layer 121, and FIG. 6 is a diagram illustrating a pattern of the layered structure of the first oxide F1 Figure. The entire first magnetic layer 121 is composed of an aggregate of a plurality of originally independent soft magnetic alloy particles P1 combined with each other, or a compact including a plurality of soft magnetic alloy particles P1. In FIG. 5, the vicinity of the interface of the three soft magnetic alloy particles P1 is enlarged and depicted. In at least a part of the soft magnetic alloy particles P1, the first oxide F1 is formed in at least a part of the periphery thereof, preferably almost the entirety, and the insulation of the first magnetic layer 121 can be ensured by the first oxide F1. Adjacent soft magnetic alloy particles P1 are bonded to each other mainly via the first oxide F1 located around each soft magnetic alloy particle P1, and as a result, a magnetic body having a fixed shape is formed. Adjacent soft magnetic alloy particles P1 may also be partially bonded to each other in the metal part. Furthermore, regardless of the case of bonding via the first oxide F1 and the case of bonding between the metal parts, it is preferable that the matrix does not substantially include an organic resin. Each soft magnetic alloy particle P1 is at least an alloy containing iron (Fe) and two elements (elements L and M) that are easier to oxidize than iron. Element L is different from element M, and both are metallic elements or Si. When the elements L and M are metallic elements, typically, Cr (chromium), Al (aluminum), Zr (zirconium), Ti (titanium), etc. can be cited, preferably Cr or Al, and more preferably Contains Si or Zr. In the entire magnetic body (first magnetic layer 121), the Fe content is preferably 92.5 to 96 wt%. In the case of the above range, a higher volume resistivity can be ensured. In the entire magnetic body, the content of the element L is preferably 2.5 to 6 wt%. In the entire magnetic body, the content of the element M is preferably 1.5 to 4.5 wt%. As elements that can be included in addition to Fe and the elements L and M, Mn (manganese), Co (cobalt), Ni (nickel), Cu (copper), P (phosphorus), S (sulfur), C (carbon) )Wait. The composition of the entire magnetic body can be calculated, for example, by performing plasma luminescence analysis on the cross-section of the magnetic body. The first oxide F1 is typically composed of an oxide film with a three-layer structure, that is, the layer closer to the magnetic alloy particle P1 (that is, the inner side) sequentially includes the first oxide film F11, the second oxide film F12, and the second oxide film F12. 3 Oxide film F13. The first oxide film F11 is an oxide containing more element L than element M. On the other hand, the second oxide film F12 contains more element M oxide than element L. In this embodiment, the element L is Si, and the first oxide film F11 is SiO 2 . On the other hand, the element M is Cr, and the second oxide film F12 is Cr 2 O 3 . The third oxide film F13 contains more Fe oxide (Fe x O y ) than the elements L and M. Fe oxides are typically Fe 3 O 4 , which is a magnetic body, or Fe 2 O 3 , which is a non-magnetic body. Both the element L contained in the first oxide film F11 and the element M contained in the second oxide film F12 correspond to those obtained by the diffusion and precipitation of Si and Cr, which are the constituent components of the soft magnetic alloy particles P1. The Fe contained in the third oxide film F13 is similarly equivalent to that obtained by diffusion and precipitation of Fe, which is a component of the soft magnetic alloy particles P1. As shown in FIG. 5, the first magnetic layer 121 has a bonding portion V1 that bonds the soft magnetic alloy particles P1 to each other. The bonding portion V1 is composed of a part of the third oxide film F13, and bonds a plurality of soft magnetic alloy particles P1 to each other. With the existence of the joint V1, the mechanical strength and insulation can be improved. The first magnetic layer 121 is preferably throughout the entirety, and adjacent soft magnetic alloy particles P1 are bonded via the bonding portion V1. However, there may be part of the soft magnetic alloy particles P1 bonded to each other without the first oxide F1. area. Furthermore, the first magnetic layer 121 may partially include the bonding portion V1 and the bonding portion (the bonding portion between the soft magnetic alloy particles P1) other than the bonding portion V1, which does not exist, and is only in a form of physical contact or proximity. . Furthermore, the first magnetic layer 121 may partially have voids. The first oxide F1 can also be formed at the stage of forming the raw material particles before the magnetic body (the first magnetic layer 121), or the first oxide F1 may not exist or rarely exist at the stage of the raw material particles, and the first oxide F1 may be produced during the forming process. 1 oxide F1. When heat treatment is performed on the soft magnetic alloy particles P1 before forming to obtain a magnetic body, it is preferable that the surface of the soft magnetic alloy particles P1 is partially oxidized to generate the first oxide F1, and the generated first oxide F1 is plural Two soft magnetic alloy particles P1 are combined. In particular, since the first oxide film F11 is formed to cover the entire surface of the soft magnetic alloy particles P1, it is preferable that the content of the element L is higher than that of the element M in the entire magnetic body. Due to the presence of the first oxide film F11, stable insulation can be obtained. In addition, by setting the content of the element M to 1.5 to 4.5 wt%, it is estimated that excessive oxidation can be suppressed, and the thickness of the first and second oxide films can be reduced. (Second Magnetic Layer) On the other hand, FIG. 7 is a schematic cross-sectional view of the second oxide F2 formed on the surface of the soft magnetic alloy particles P2 constituting the second magnetic layer 122, and FIG. 8 illustrates the second oxide F2. A schematic diagram of the layered structure. Similarly, the second magnetic layer 122 is composed of an aggregate formed by combining a plurality of soft magnetic alloy particles P2 with each other, or a compact including a plurality of soft magnetic alloy particles P2. In FIG. 7, the vicinity of the interface of the three soft magnetic alloy particles P2 is enlarged and depicted. In at least a part of the soft magnetic alloy particles P2, the second oxide F2 is preferably formed almost entirely in at least a part of the periphery thereof, and the insulation of the second magnetic layer 122 can be ensured by the second oxide F2. The adjacent soft magnetic alloy particles P2 are bonded to each other mainly via the second oxide F2 located around each soft magnetic alloy particle P2, and as a result, a magnetic body having a fixed shape is formed. Adjacent soft magnetic alloy particles P2 may be locally bonded to each other in the metal part, but in order to achieve more reliable insulation, it is preferable to form a magnetic body by bonding by the second oxide F2. Furthermore, regardless of the case of bonding via the second oxide F2 and the case of bonding between the metal parts, it is preferable that the matrix containing an organic resin is not substantially included. Each soft magnetic alloy particle P2 is at least an alloy containing iron (Fe) and two elements (elements L and M) that are easier to oxidize than iron. Element L is different from element M, and both are metallic elements or Si. When the elements L and M are metallic elements, typically, Cr (chromium), Al (aluminum), Zr (zirconium), Ti (titanium), etc. can be cited, preferably Cr or Al, and more preferably Contains Si or Zr. In the entire magnetic body (the second magnetic layer 122), the Fe content is preferably 92.5 to 96 wt%. In the case of the above range, a higher volume resistivity can be ensured. In the entire magnetic body, the content of the element L is preferably 2.5-6 wt%. In the entire magnetic body, the content of element M is preferably 1.5 to 4.5 wt%. The composition of the entire magnetic body can be calculated, for example, by performing plasma luminescence analysis on the cross-section of the magnetic body. As elements that can be included in addition to Fe and the elements L and M, Mn (manganese), Co (cobalt), Ni (nickel), Cu (copper), P (phosphorus), S (sulfur), C (carbon) )Wait. The second oxide F2 is typically composed of an oxide film with a four-layer structure, including a first oxide film F21 covering the soft magnetic alloy particles P2, a second oxide film F22 covering the first oxide film F21, and a second oxide film covering the second oxide film F21. The third oxide film F23 of the film F22 and the fourth oxide film F24 that cover the third oxide film F23. The first oxide film F21 and the third oxide film F23 contain an oxide of the element L, typically, an oxide containing more element L than the element M. On the other hand, the second oxide film F22 contains an oxide of the element M, and typically contains more oxides of the element M than the element L. In this embodiment, the element L is Si, and the first and third oxide films F21 and F23 are SiO 2 . On the other hand, the element M is Cr, and the second oxide film F22 is Cr 2 O 3 . The fourth oxide film F24 contains more Fe oxide (Fe x O y ) than the element L. Fe oxides are typically Fe 3 O 4 , which is a magnetic body, or Fe 2 O 3 , which is a non-magnetic body. Both the element L contained in the first oxide film F21 and the element M contained in the second oxide film F22 correspond to those obtained by the diffusion and precipitation of Si and Cr which are the constituent components of the soft magnetic alloy particles P2. The Fe contained in the fourth oxide film F24 is similarly equivalent to that obtained by diffusion and precipitation of Fe as a constituent of the soft magnetic alloy particles P2. In contrast, the element L (Si) constituting the third oxide film F23 is composed of a film of SiO 2 previously formed on the surface of the soft magnetic alloy particle P2 as described below. The presence of the second oxide F2 can be confirmed by the composition mapping of a scanning electron microscope (SEM, scanning electron microscope) with a magnification of about 5000 times. The existence of the first to fourth oxide films F21 to F24 constituting the second oxide F2 can be confirmed by the composition mapping of a transmission electron microscope (TEM) with a magnification of about 20,000 times. The thickness of the first to fourth oxide films F21 to F24 can be confirmed by an energy dispersive spectrometer (EDS) of TEM with a magnification of about 800,000 times. The presence of the second oxide F2 can ensure the insulation of the entire magnetic body. In particular, the second oxide F2 further includes an oxide film (third oxide film F23) compared to the above-mentioned first oxide F1, so that higher insulating properties than the first oxide F1 can be obtained. As shown in FIG. 7, the second magnetic layer 122 has a bonding portion V2 that bonds the soft magnetic alloy particles P2 to each other. The bonding portion V2 is composed of a part of the fourth oxide film F24, and bonds a plurality of soft magnetic alloy particles P2 to each other. The existence of the bonding portion V2 can be visually recognized, for example, from an SEM observation image enlarged to about 5000 times. With the existence of the joint V2, the mechanical strength and insulation can be improved. The second magnetic layer 122 is preferably throughout the whole, and the adjacent soft magnetic alloy particles P2 are bonded via the bonding portion V2, but there may be a region where the soft magnetic alloy particles P2 are bonded to each other partially without the second oxide F2. . Furthermore, the second magnetic layer 122 may partially include the bonding portion V2 and the bonding portion (the bonding portion between the soft magnetic alloy particles P1) other than the bonding portion V2, which do not exist, but are only in physical contact or close to each other. . Furthermore, the second magnetic layer 122 may partially have voids. The second oxide F2 can also be formed at the stage of forming the raw material particles before the magnetic body (the second magnetic layer 122), or the second oxide F2 may not exist or rarely exist at the stage of the raw material particles, but is generated during the forming process The second oxide F2. In this embodiment, the pretreatment of forming the third oxide film F23 on the surface of the soft magnetic alloy particle P2 is performed in the stage of forming the raw material particles before the magnetic body (the second magnetic layer 122). Furthermore, when the soft magnetic alloy particles P2 before forming are subjected to heat treatment to obtain a magnetic body (the second magnetic layer 122), the surface of the soft magnetic alloy particles P2 is partially oxidized to produce the first oxide film F21, the second oxide film F22, The fourth oxide film F24 and the junction V2. The pretreatment method for forming the coating material constituting the third oxide film F23 on the surface of the raw material particles is not particularly limited. In this embodiment, a coating process using a sol-gel method is used. Typically, after mixing and stirring a treatment solution containing TEOS (Tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water into a mixed solution containing soft magnetic alloy particles P2, ethanol and ammonia, The soft magnetic alloy particles P2 are filtered, separated, and dried, whereby the soft magnetic alloy particles P2 having a coating material containing a SiO 2 film formed on the surface are produced. Here, if the treatment liquid is mixed into the mixed liquid at one time, uniform nucleation is dominant, and the SiO 2 particles nucleate in the solution and the crystal grains grow to form agglomerates, which adhere to the soft magnetic alloy The surface of the particles P2 cannot form a coating material stably. Therefore, in this embodiment, the treatment liquid is divided into multiple times and dropped into the mixed liquid while being mixed to suppress the uniform nucleation of the SiO 2 particles and make the surface of the soft magnetic alloy particles P2 uneven. Nucleation is dominant, whereby the coating material can be stably formed on the surface of the soft magnetic alloy particles P2. The thickness of the third oxide film F23 (coating material) can be adjusted according to the amount of TEOS (Tetraethyl orthosilicate) contained in the treatment liquid. The more TEOS amount, the thicker the film can be obtained. The thickness of the third oxide film F23 is not particularly limited, but is preferably 1 nm or more and 20 nm or less. When the thickness is less than 1 nm, the coverage of the third oxide film F23 deteriorates, and it is difficult to improve the insulation characteristics. In addition, if the thickness exceeds 20 nm, the filling rate of the soft magnetic alloy particles P2 is lowered, and the magnetic properties tend to be lowered. In addition, the thickness of the third oxide film F23 may be equal to or greater than the thickness of the first oxide film F21, or may be smaller than the thickness of the first oxide film F21. By making the thickness of the third oxide film F23 equal to or greater than the thickness of the first oxide film F21, compared with the case where the third oxide film F23 is not present, the insulation characteristics can be effectively improved. On the other hand, by making the thickness of the third oxide film F23 smaller than the thickness of the first oxide film F21, it is possible to suppress the decrease in magnetic properties (relative permeability, etc.) caused by the presence of the third oxide film F23. In particular, since the first oxide film F21 is formed so as to cover the entire surface of the soft magnetic alloy particles P2, it is preferable that the content of the element L is higher than that of the element M in the entire magnetic body. Due to the presence of the first oxide film F21, stable insulation can be obtained. In addition, by setting the content of the element M to be 1.5 to 4.5 wt%, excessive oxidation can be suppressed, and the thickness of the first and second oxide films F21 and F22 can be reduced. In addition, the first, second, third, and fourth oxide films F21 to F24 obtained here are amorphous, amorphous, amorphous, and crystalline, respectively. The first, second, third, and fourth oxide films are formed by alternately forming films with different properties to become an oxide film with both insulating properties and oxidation suppression, and by not having more than the required thickness, it can be obtained A magnetic body that improves relative permeability and has insulation properties. (Third Magnetic Layer) The magnetic material constituting the third magnetic layer 123 may be configured in the same manner as the first magnetic layer 121, or may be configured in the same manner as the second magnetic layer 122. Typically, the third magnetic layer 123 is made of a magnetic material having magnetic properties equivalent to or higher than that of the first magnetic layer 121. [Method of Manufacturing Coil Components] Next, a method of manufacturing the coil component 10 will be described. 9A to C are schematic cross-sectional views illustrating the main parts of the method of manufacturing the magnetic layers ML1 to ML7 of the coil component 10. The method of manufacturing the magnetic layers ML1 to ML7 includes a manufacturing step of the first magnetic layer 121, a formation step of the conductor pattern C10, and a manufacturing step of the second magnetic layer 122. (Production of the first magnetic layer) When making the first magnetic layer 121, use a coater (not shown) such as a doctor blade or a die coater to coat the pre-prepared magnetic paste (slurry) on the plastic The surface of the base film (not shown). Then, using a dryer (not shown) such as a hot-air dryer, the base film was dried at about 80°C for about 5 minutes to produce the first to seventh magnetic sheets 121S (corresponding to the magnetic layers ML1 to ML7, respectively). Refer to Figure 9A). These magnetic sheets 121S are each formed in a size that can obtain a plurality of first magnetic layers 121. The composition of the magnetic paste used here is that the FeCrSi alloy particles (soft magnetic alloy particles P1) are 75 to 85 wt%, butyl carbitol (solvent) is 13 to 21.7 wt%, and polyvinyl butyral (bonding The agent) is 2 to 3.3 wt%, and is adjusted according to the average particle diameter (median diameter) of the FeCrSi particle group. For example, when the average particle diameter (median diameter) of the FeCrSi alloy particles is 3 μm or more, set it to 85 wt%, 13 wt%, and 2 wt%, respectively. If it is above 1.5 μm and less than 3 μm, In the case, they are set to 80 wt%, 17.3 wt%, and 2.7 wt%, respectively. When the diameter is less than 1.5 μm, they are set to 75 wt%, 21.7 wt%, and 3.3 wt%, respectively. The average particle size of the FeCrSi alloy particle group is selected according to the thickness of the first magnetic layer 121 and the like. The FeCrSi alloy particle group is manufactured by, for example, an atomization method. The first magnetic layer 121 is produced with a thickness in which four or more alloy magnetic particles (FeCrSi alloy particles) are arranged in the thickness direction, and the thickness thereof is, for example, 5 μm or more and 25 μm or less. In this embodiment, the average particle diameter of the alloy magnetic particles is preferably 1 to 4 μm in d50 (median diameter) on a volume basis. The d50 of the alloy magnetic particles is measured using a particle size and particle size distribution measuring device (for example, Microtrac manufactured by Nikkiso Co., Ltd.) using the laser diffraction scattering method. Then, using a punching machine (not shown) such as a punching machine or a laser processing machine, the first to sixth magnetic sheets 121S corresponding to the magnetic layers ML1 to ML6 are formed in a specific arrangement with the through holes V1 to V6 (Refer to Figure 3) Corresponding through holes (not shown). Regarding the arrangement of the through holes, when the first to seventh magnetic sheets 121S are laminated, the through holes filled with conductors and the conductor patterns C11 to C17 are set so that internal conductors are formed. (Formation of Conductor Pattern) Next, as shown in FIG. 9B, conductor patterns C11 to C17 are formed on the first to seventh magnetic sheets 121S. The conductor pattern C11 uses a printer (not shown) such as a screen printer or a gravure printer to print a pre-prepared conductor paste on the surface of the first magnetic sheet 121S corresponding to the magnetic layer ML1. Furthermore, when the conductor pattern C11 is formed, the above-mentioned conductor paste is filled into the through hole corresponding to the through hole V1. Then, using a dryer (not shown) such as a hot air dryer, the first magnetic sheet 121S is dried at about 80° C. for about 5 minutes, and the first printed layer corresponding to the conductor pattern C11 is produced in a specific arrangement. Regarding the conductor patterns C12 to C17 and the through holes V2 to V6, the same method as described above is also used. Thereby, the second to seventh printed layers corresponding to the conductor patterns C12 to C17 are formed in a specific arrangement on the surfaces of the second to seventh magnetic sheets 121S corresponding to the magnetic layers ML2 to ML7. The composition of the conductor paste used here is that the Ag particle group is 85 wt%, the butyl carbitol (solvent) is 13 wt%, the polyvinyl butyral (binder) is 2 wt%, and the d50 ( The median diameter) is about 5 μm. (Production of the second magnetic layer) Next, as shown in FIG. 6C, the second magnetic layer 122 is formed on the first to seventh magnetic sheets 121S. When producing the second magnetic layer 122, first, by performing the above-mentioned pretreatment, soft magnetic alloy particles P2 having a coating material (third oxide film F23) including a silicon oxide film formed on the surface are prepared. Then, using a printing machine (not shown) such as a screen printing machine or a gravure printing machine, the magnetic paste (slurry) of the FeCrSi alloy particle group containing the soft magnetic alloy particles is applied to the first to seventh magnetic sheets Around the conductor patterns C11 to C17 on the material 121S. Next, using a dryer (not shown) such as a hot air dryer, the magnetic paste is dried at about 80°C for about 5 minutes. The composition of the magnetic paste used here is 85% by weight of FeCrSi alloy particles, 13% by weight of butyl carbitol (solvent), and 2% by weight of polyvinyl butyral (binder). The thickness of the second magnetic layer 122 is adjusted so as to be the same as the thickness of the conductor patterns C11 to C17 or within 20% of the thickness difference. The thickness of the second magnetic layer 122 is approximately the same plane in the stacking direction, so that the magnetic layers are different from each other. The magnetic body portion 12 is obtained without the occurrence of a step difference and no build-up shift or the like. The second magnetic layer 122 is made with a thickness such that three or more alloy magnetic particles (FeCrSi alloy particles) are arranged in the thickness direction. The thickness thereof is, for example, 4 μm or more and 20 μm or less. The average particle diameter of the soft magnetic alloy particles P2 constituting the second magnetic layer 122 may be the same as the average particle diameter of the soft magnetic alloy particles P1 constituting the first magnetic layer 121, or may be larger or smaller. In this embodiment, the average particle size is 1 to 4 μm. Since the smaller the average particle diameter of the soft magnetic alloy particles P2, the more the specific surface area increases, so the insulating effect of the soft magnetic alloy particles P2 caused by the second oxide F2 increases. The first to seventh sheets corresponding to the magnetic layers ML1 to ML7 were produced in the manner described above (see FIG. 9C). (Production of the third magnetic layer) When making the third magnetic layer 123, use a coater (not shown) such as a doctor blade or a die coater to coat the pre-prepared magnetic paste (slurry) on the plastic The surface of the base film (not shown). Then, using a dryer (not shown) such as a hot air dryer, the base film was dried at about 80°C for about 5 minutes to prepare magnetic sheets corresponding to the third magnetic layer 123 constituting the magnetic layer MLU and MLD, respectively . These magnetic sheets are respectively formed in a size that can obtain a plurality of third magnetic layers 123. The composition of the magnetic paste used here is 85% by weight of FeCrSi alloy particles, 13% by weight of butyl carbitol (solvent), and 2% by weight of polyvinyl butyral (binder). As described above, the third magnetic layer 123 is set according to the number of stacked layers so that the thickness of each of the magnetic layers MLU and MLD becomes, for example, 50 μm or more and 120 μm or less. In this embodiment, the average particle diameter of the alloy magnetic particles constituting the third magnetic layer 123 may be the same as the average particle diameter of the alloy magnetic particles constituting the first magnetic layer 121 and the average particle diameter of the alloy magnetic particles constituting the second magnetic layer 122. The diameter is the same, or it can be larger or smaller. When the average particle size is the same, the relative magnetic permeability can be increased, and when the average particle size is smaller, the third magnetic layer 123 can be made thinner. (Laminating and cutting) Next, using a suction conveyor and a pressing machine (all omitted), the first to seventh sheets (corresponding to the magnetic layer ML1 to ML7) and the eighth sheet group (corresponding to the magnetic layer MLU) , MLD correspondence) Laminated in the order shown in Figure 3 and thermocompression bonded to produce a laminate. Then, using a cutting machine (not shown) such as a dicing machine or a laser processing machine (not shown), the laminated body is cut into the size of the part body to produce a wafer before processing (including the magnetic body part and the coil part before heat treatment) . (Degreasing and Oxide Formation) Next, a heat treatment machine (not shown) such as a baking furnace is used to heat a plurality of wafers before heat treatment together in an oxidizing environment such as the air. The heat treatment includes a degreasing process and an oxide forming process. The degreasing process is performed at about 500° C. for about 1 hour, and the oxide forming process is performed at about 700° C. for about 5 hours. In the wafer before the heat treatment before the debinding process, there are a plurality of fine gaps between the FeSiCr alloy particles in the magnetic body before the heat treatment, and the adhesive and the like are contained in the fine gaps. However, these adhesives disappear during the degreasing process, so after the degreasing process ends, the fine gaps become pores (voids). In addition, there are many fine gaps between the Ag particles in the coil part before the heat treatment. The fine gaps contain adhesives, etc., but these adhesives disappear during the degreasing process. In the oxide formation process following the degreasing process, the FeSiCr alloy particles in the magnetic body before the heat treatment are densely packed to form the magnetic body portion 12 (refer to Figures 1 and 2), and at the same time, the FeSiCr alloy particles are formed on the surface of the respective FeSiCr alloy particles. Oxides (first oxide F1 and second oxide F2). In addition, the Ag particles in the coil part before the heat treatment are sintered to produce the coil part 13 (refer to FIGS. 1 and 2), thereby producing the component body 11. At this time, regarding the first magnetic layer 121, the first oxide F1 including the first to third oxide films F11 to F13 is formed on the surface of the soft magnetic alloy particle P1, and the soft magnetic particles P1 are bonded to each other via the bonding portion V1 (Refer to Figure 5). On the other hand, regarding the second magnetic layer 122, a second oxide F2 including the first to fourth oxide films F21 to F24 is formed on the surface of the soft magnetic alloy particle P2, and the soft magnetic alloy particle P2 Combine with each other (refer to Figure 7). (Formation of external electrodes) Then, using a coating machine (not shown) such as a dip coater or a roll coater, apply the pre-prepared conductor paste to both ends of the part body 11 in the longitudinal direction, and use a baking furnace A heat treatment machine (not shown) is used for baking treatment at about 650°C for about 20 minutes. The baking treatment eliminates the solvent and binder and sinters the Ag particles to produce the exterior Electrodes 14, 15 (refer to Figs. 1 and 2). The conductor paste used here for the external electrodes 14 and 15 is composed of Ag particles of 85 wt% or more, and in addition to the Ag particles, it contains glass, butyl carbitol (solvent), and polyvinyl butyral (adhesive). Agent), and the d50 (median diameter) of the Ag particle group is about 5 μm. Finally, plating is performed. Plating is performed using normal electroplating, and metal films of Ni and Sn are attached to the external electrodes 14 and 15 formed by sintering the Ag particles. In this way, the coil component 10 can be obtained. In the coil component 10 of this embodiment, the magnetic material constituting the second magnetic layer 122 has the soft magnetic alloy particles P2 and the second oxide F2 formed on the surface thereof. In the above-mentioned magnetic material, since the surface of the soft magnetic alloy particle P2 is covered by the first to fourth oxide films F21 to F24, higher insulating properties than the magnetic material constituting the first magnetic layer 121 are obtained. Thereby, the insulation characteristic of the coil component 10 can be improved, and it can also respond easily to large current. Furthermore, since the second magnetic layer 122 has higher insulation properties than the first magnetic layer 121, even if the distance between the soft magnetic alloy particles P2 is shortened, good insulation properties can be ensured. Therefore, even when the process of increasing the powder density of the magnetic material (the relative density of the second magnetic layer 122) is additionally performed to achieve the improvement of the magnetic properties, the required insulation properties can be stably ensured. [Examples] Hereinafter, examples of the present invention will be described. (Example 1) It took 50 minutes to add TEOS (Tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles) and a mixture of a specific amount of ethanol and ammonia are mixed and stirred, then filtered, separated, and dried to produce Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 15 nm are formed on the surface. To make the pressed powder (magnetic body) of the soft magnetic alloy particles, the relative permeability (μ), volume resistivity [Ω･cm], dielectric breakdown voltage (BVD) [MV/cm] and strength [ kgf/mm 2 ] for evaluation. The production conditions of the compact are as follows. 100 parts by weight of alloy particles and 1.5 parts by weight of PVA (polyvinyl alcohol, polyvinyl alcohol) binder are stirred and mixed together, and 0.5 parts by weight of Zn stearate is added as a lubricant. After that, it was molded into a shape used for the following evaluations at a molding pressure of 6 to 18 ton/cm 2. At this time, the forming pressure is adjusted so that the filling rate of the soft magnetic alloy particles in the magnetic body becomes 80 vol%. Then, the obtained compact was degreased at 500°C for 1 hour, and heat-treated at 700°C for 5 hours in an atmospheric environment (in an oxidizing environment) to obtain a magnetic body. In order to determine the relative permeability (M), a ring-shaped magnetic body with an outer diameter of 8 mm, an inner diameter of 4 mm, and a thickness of 1.3 mm was manufactured. A coil including a urethane-coated copper wire with a diameter of 0.3 mm was wound 20 turns on the magnetic body to obtain a measurement sample. L Chronometer (manufactured by Agilent Technologies: 4285A) was used to measure the relative permeability of the magnetic body at a measuring frequency of 10 MHz. The volume resistivity is measured in accordance with JIS-K6911. Among them, a disk-shaped magnetic body with an outer shape of f7.0 mm × a thickness of 0.5 to 0.8 mm was manufactured as a measurement sample. After the above heat treatment, an Au film is formed on the two bottom surfaces (the entire bottom surface) of the disc shape by sputtering. A voltage of 3.6 V (60 V/cm) was applied to the two surfaces of the Au film. Calculate the volume resistivity based on the resistance value at this time. In order to measure the insulation breakdown voltage, a disk-shaped magnetic body with an outer shape of f7.0 mm×thickness 0.5 to 0.8 mm was manufactured as a measurement sample. After the above heat treatment, an Au film is formed on the two bottom surfaces (the entire bottom surface) of the disc shape by sputtering. Voltage was applied to both surfaces of the Au film, and IV measurement was performed. Slowly increase the applied voltage, and the applied voltage at the time when the current density becomes 0.01 A/cm 2 is regarded as the breaking voltage. In order to evaluate the mechanical strength, three-point bending breaking stress was measured. Fig. 10 is a schematic explanatory diagram explaining the measurement of the 3-point bending breaking stress. A load is applied to the measurement object as shown in the figure, and the load W when the measurement object is broken is measured. In consideration of the bending moment M and the second moment of section I, the three-point bending breaking stress σb is calculated according to the following formula. σb=(M/l)×(h/2)=3WL/2bh 2 Regarding the test piece used to measure the 3-point bending breaking stress, a plate-shaped magnetic body with a length of 50 mm, a width of 10 mm, and a thickness of 4 mm is manufactured As a measurement sample. The composition and thickness of the oxide film (corresponding to the first to fourth oxide films F21 to F24 in FIG. 7) on the surface of the alloy particles formed in the magnetic body were measured. The STEM (scanning transmission electron microscope) equipped with EDS is used in the measurement. The composition of the oxide film is determined by the STEM-EDS method, and the composition of the oxide film is determined by the STEM-high angle annular dark field (HAADF, high angle annular dark field). field) method to measure the thickness of the oxide film. Immediately before the measurement, a focused ion beam device (FIB, focused ion beam) was used to prepare a sheet sample in a manner of 50-100 nm. The diameter of the electron beam was within the range of 0.2-1.5 nm. The analytical method measures the composition of the oxide film, and the HAADF method measures the thickness of the oxide film. The place for measuring the thickness of each oxide film is performed at the part where the alloy particles are not bonded to each other, and plumb lines are drawn to the surface of the alloy particles. Then, observe from the surface of the alloy particle to the outside on the vertical line, and set the portion where the oxygen content ratio is 5% or less as the surface of the alloy particle. Furthermore, when observing from the surface of the alloy particles to the outside, the range where the amount of the element L (Si, Zr, Hf, or Ti) is greater than the element M (Cr or Al) is defined as the oxide film of the element L (first oxide film) The thickness. After that, continue to look to the outside in the same way, set the range where the amount of element M is greater than element L as the oxide film of element M (second oxide film), and set the range where the amount of element L is greater than element M It is an oxide film of element L (third oxide film). Furthermore, regarding the oxide film of Fe (the fourth oxide film), the amount of Fe is larger than that of the element L. The measurement results are shown in Table 1 and Table 2. The relative permeability is 27, the volume resistivity is 2.7×10 3 [Ω･cm], the breakdown voltage is 1.3×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 15 nm (component Si), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 2) It took 10 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 1 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 36, the volume resistivity is 7.1×10 1 [Ω･cm], the breakdown voltage is 5.3×10 -3 [MV/cm], and the strength is 14 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 1 nm (component Si), and the thickness of the fourth oxide film It is 60 nm (component Fe). (Example 3) It took 15 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 5 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 34, the volume resistivity is 3.2×10 2 [Ω･cm], the insulation breakdown voltage is 7.8×10 -3 [MV/cm], and the strength is 12 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 5 nm (component Si), and the thickness of the fourth oxide film It is 40 nm (component Fe). (Example 4) In 20 minutes, a treatment solution containing a specific amount of TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol, and water was added dropwise to the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles with a coating layer of a film containing SiO 2 with a thickness of 11 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 30, the volume resistivity is 3.2×10 2 [Ω･cm], the insulation breakdown voltage is 7.8×10 -3 [MV/cm], and the strength is 11 [kgf/mm 2 ]. In addition, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 11 nm (component Si), and the thickness of the fourth oxide film It is 30 nm (component Fe). (Example 5) In 50 minutes, a treatment solution containing a specific amount of zirconium tetraisopropoxide, Zr(OiC 3 H 7 ) 4 , ethanol and water was added dropwise to the average particle size (D50 ) After mixing and stirring the 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia water, the soft magnetic alloy particles are filtered, separated, and dried to form on the surface Soft magnetic alloy particles with a coating layer containing a ZrO 2 film with a thickness of 15 nm. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 27, the volume resistivity is 2.5×10 3 [Ω･cm], the breakdown voltage is 1.1×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 15 nm (component Zr), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 6) In 50 minutes, a treatment solution containing a specific amount of hafnium tetraisopropoxide, Hf[OCH(CH 3 ) 2 ] 4 , ethanol and water was added dropwise to the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of HfO 2 film with a thickness of 15 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 26, the volume resistivity is 2.4×10 3 [Ω･cm], the insulation breakdown voltage is 1.2×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 15 nm (component Hf), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 7) In 50 minutes, a treatment solution containing a specific amount of titanium tetraisopropoxide, Ti[OCH(CH 3 ) 2 ] 4 , ethanol, and water was added dropwise to the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of TiO 2 film with a thickness of 15 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 27, the volume resistivity is 2.5×10 3 [Ω･cm], the breakdown voltage is 1.1×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 15 nm (component Ti), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 8) It took 50 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeSiAl alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 15 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 25, the volume resistivity is 3.0×10 3 [Ω･cm], the breakdown voltage is 1.1×10 -2 [MV/cm], and the strength is 11 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 15 nm (component Al), the thickness of the third oxide film is 15 nm (component Si), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 9) It took 50 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeZrCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 15 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 27, the volume resistivity is 2.0×10 3 [Ω･cm], the breakdown voltage is 1.1×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. In addition, the thickness of the first oxide film is 5 nm (component Zr), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 15 nm (component Si), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 10) It took 70 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 6 μm soft magnetic alloy particles (FeZrCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 20 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 25, the volume resistivity is 4.1×10 3 [Ω･cm], the breakdown voltage is 1.1×10 -2 [MV/cm], and the strength is 10 [kgf/mm 2 ]. In addition, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 20 nm (component Si), and the thickness of the fourth oxide film It is 20 nm (component Fe). (Example 11) In 90 minutes, a treatment solution containing a specific amount of TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol, and water was added dropwise to the average particle size. (D50) 6 μm soft magnetic alloy particles (FeZrCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 24 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 21, the volume resistivity is 5.0×10 3 [Ω･cm], the insulation breakdown voltage is 8.0×10 -3 [MV/cm], and the strength is 8 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 24 nm (component Si), and the thickness of the fourth oxide film It is 15 nm (component Fe). (Example 12) It took 10 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 2 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, then filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 1 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 21, the volume resistivity is 8.0×10 1 [Ω･cm], the insulation breakdown voltage is 6.6×10 -3 [MV/cm], and the strength is 12 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 1 nm (component Si), and the thickness of the fourth oxide film It is 60 nm (component Fe). (Example 13) It took 10 minutes to add TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol and water in equal amounts to the treatment solution containing the average particle size. (D50) 1 μm soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia are mixed and stirred, then filtered, separated, and dried to make the soft magnetic alloy particles Soft magnetic alloy particles containing a coating layer of SiO 2 film with a thickness of 1 nm are formed on the surface. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 10, the volume resistivity is 1.0×10 2 [Ω･cm], the insulation breakdown voltage is 1.2×10 -2 [MV/cm], and the strength is 13 [kgf/mm 2 ]. Also, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), the thickness of the third oxide film is 1 nm (component Si), and the thickness of the fourth oxide film It is 60 nm (component Fe). (Comparative example) A treatment solution containing a specific amount of TEOS (tetraethoxysilane, Si(OC 2 H 5 ) 4 ), ethanol, and water was mixed and stirred to contain the average particle size (D50) of 6 μm. After the soft magnetic alloy particles (FeSiCr alloy particles), a specific amount of ethanol and ammonia water are mixed, the soft magnetic alloy particles are filtered, separated, and dried, thereby forming a 30 nm thick SiO 2 on the surface The soft magnetic alloy particles of the coating layer of the film. Under the same conditions as in Example 1, a compact (magnetic body) of the soft magnetic alloy particles was produced, and the relative permeability (μ), volume resistivity [Ω･cm], and insulation breakdown voltage (BVD) [MV/cm] and strength [kgf/mm 2 ] were evaluated. The measurement results are shown in Table 1 and Table 2. The relative permeability is 20, the volume resistivity is 1.1×10 1 [Ω･cm], the insulation breakdown voltage is 7.0×10 -4 [MV/cm], and the strength is 7 [kgf/mm 2 ]. In addition, the thickness of the first oxide film is 5 nm (component Si), the thickness of the second oxide film is 11 nm (component Cr), and the thickness of the third oxide film is 71 nm. Its composition is composed of Fe as the main component and mixed There are those with Si and Cr. Furthermore, the fourth oxide film could not be confirmed. [Table 1]
Figure 108115369-A0304-0001
 [Table 2]
Figure 108115369-A0304-0002
 As shown in Tables 1 and 2, according to Examples 1 to 11 in which a specific amount of the treatment liquid was dropped and mixed into the solution of alloy particles to form the coating material, it was possible to obtain the treatment liquid that was mixed at once. The comparative example of the coating material formed in the above solution has higher insulation failure characteristics and higher relative magnetic permeability. It can be presumed that the reason is that the third oxide film (coating material) is uniformly formed on the surface of the alloy powder. Although the thickness of the oxide film is relatively thin, there are almost no defects. In addition, it can be estimated that having both the first oxide film and the third oxide film also contributes to the dielectric breakdown characteristics, and the thickness of the entire first to fourth oxide films can be reduced. Here, if Example 1 is compared with the comparative example, the result is: as a pretreatment for forming a coating layer containing Si oxide film on alloy particles, it is used in the use of a mixture containing ethanol, ammonia, TEOS, and water. Same aspect. However, the morphology of the SiO 2 film formed on the surface of the alloy particles is greatly different due to the preparation method of the mixed solution. That is, in the treatment method of the comparative example in which alloy particles, ethanol, ammonia, TEOS, and water are mixed at once, as described above, the SiO 2 particles nucleate in the solution and the crystal grains grow to form agglomerates and the agglomerates The uniform nucleation attached to the surface of the alloy particles is dominant. As a result, the fine particles of SiO 2 cannot cover the entire alloy particles and partially adhere to the surface, so that the insulation withstand voltage characteristics of the soft magnetic alloy particles cannot be improved. 11 is a particle cross-sectional view schematically showing the state of SiO 2 fine particles formed on the surface of soft magnetic alloy particles in the case of a comparative example in which alloy particles, ethanol, ammonia water, TEOS, and water are mixed at once. Furthermore, in the case of forming SiO 2 particles by preparing the above-mentioned mixed solution, a high-resolution TEM with a magnification of about 50,000 times is used to perform uniform nucleation and crystal grain growth on the SiO 2 particles. As a result of the observation, for example, moire in the form of stripes is observed and interference patterns are observed. The moire pattern is a crystalline lattice pattern. Since this phenomenon is observed, the aggregate obtained by the processing method of the comparative example is crystalline. In contrast, according to the treatment method of Example 1 in which a treatment solution containing TEOS, ethanol, and water was added dropwise several times and mixed into a mixed solution containing alloy particles, ethanol and ammonia, uniform nucleation was suppressed, and The uneven nucleation on the surface of the alloy particles is dominant, so the coating layer on the surface of the alloy particles is formed with a stable and uniform thickness even if the thickness of the surface of the alloy particles is less than 25 nm. By using this method, the film thickness of the coating layer can be controlled at the single nanometer level using the input amount of TEOS. For example, even with a thickness of 1 nm, stable coating film formation can be achieved. FIG. 12 is a particle cross-sectional view schematically showing the state of the coating layer when the coating layer is formed on the soft magnetic alloy particles in Example 1. FIG. In addition, as a result of observing the coating layer formed in Example 1 using a high-resolution TEM with a magnification of about 50,000 times, for example, no fringe-like moire was observed. Since the moire interference lines were not observed, it was confirmed that the coating layer of Example 1 was amorphous. Generally, the insulation resistance of amorphous SiO 2 is about 2 to 3 digits higher than that of crystalline SiO 2. Therefore, even if the film thickness of the SiO 2 coated in Example 1 is, for example, 1 nm, it can have higher insulation withstand voltage characteristics than the comparative example. Furthermore, since the thickness of the coating layer of Examples 1 to 11 is 24 nm or less and thinner, by the heat treatment, iron (Fe) diffuses from the alloy particles to the outside of the coating layer to form the fourth oxide film stably. In this way, the insulation characteristics can be further improved. In this way, since Example 1 and Comparative Example 1 are greatly different in the method of forming the oxide film as a pretreatment, the film quality of the obtained oxide film is greatly different. The difference in the film quality of the oxide film is embodied in the difference in the insulation withstand voltage characteristics and strength of the pressed powder after heat treatment. Based on the above evaluation, Example 1 can improve the relative magnetic permeability more than Example 8. It can be predicted that the reason is that A1 is more prone to oxidation reaction than Cr, so this effect will slightly affect the filling rate after heat treatment. In terms of being able to increase the relative permeability, the element M is preferably Cr. In addition, Example 1 can improve the dielectric breakdown characteristics more than Examples 5 and 6. It can be predicted that the reason is that even if it is an oxide film of the same thickness as that of Zr and Hf, the uniformity of the Si oxide film is higher and becomes an oxide film with fewer defects. In particular, when the thicknesses of the first to fourth oxide films are set in the order of the thickness of the first <the third <the fourth (Examples 1, 4 to 9), the insulation can be further improved. In the case of soft magnetic alloy particles of the same size and set as 3≦1<4 (Examples 2 and 3), the relative magnetic permeability can be improved. The fourth oxide film fills the voids created by degreasing the adhesive, and even if the thickness is increased, the relative permeability will not be greatly reduced, and the strength can be improved by filling the voids. Reduce water penetration from the outside, thereby improving reliability. In addition, regarding the first and second oxide films of Examples 5, 6, and 7, it can be seen that they are composed of only the components of the soft magnetic alloy particles, and it is shown that each oxide film is formed independently. Furthermore, in Example 11, it was observed that the relative magnetic permeability was further lower than that in Example 10, and became a value slightly higher than that of the comparative example. It can be predicted that this is due to the excessive formation of the third oxide film. In addition, in the embodiment here, the thickness of the third oxide film is not made thinner than 1 nm. When it is less than 1 nm, a film covering the surface of the soft magnetic alloy particles cannot be formed. Regarding the oxide formed by the element L that forms the third oxide film, it can be predicted that the size of the oxide is 0.5 nm or more. Since oxides of this size are arranged continuously, an oxide film of 1 nm or more is required. Therefore, the third oxide film is preferably 1 nm or more and 20 nm or less. Compared with the third oxide film having a thickness of 1 nm in Example 2, 6 μm alloy particles were used, and in Examples 12 and 13, alloy particles of 2 μm and 1 μm were used, respectively. Although the relative magnetic permeability is reduced due to the miniaturization of alloy particles, by using the same method as in Example 2, a stable and uniform thickness coating as shown in Figure 12 can be formed regardless of the particle size of the alloy particles. Layer, it is possible to improve the insulation destruction characteristics. In contrast, in the treatment method of the comparative example in which alloy particles, ethanol, ammonia, TEOS, and water are mixed at once, although agglomerates of SiO 2 particles are attached to the surface of the alloy particles, the insulation failure characteristics are ensured, but if If the difference in particle size between the alloy particles and the SiO 2 particles becomes smaller, it is difficult to densely cover the surface of the alloy particles, and the insulation failure characteristics cannot be improved. In addition, it was confirmed that the same insulating properties as the FeSiCr-based magnetic body can be obtained even for the FeSiAl-based and FeZrCr-based magnetic bodies. In addition, when the composition of the coating material is Zr, Hf, and Ti, it has also been confirmed that the same insulating properties as the magnetic body of the coating material having the Si component can be obtained. As mentioned above, although the embodiment of this invention was described, this invention is not limited to the said embodiment, of course, various changes can be added. For example, in the above embodiment, only an example of applying the magnetic material of the present invention to the second magnetic layer 122 has been described, but it is not limited to this, and the present invention can also be applied to the first magnetic layer 121 and the third magnetic layer 121. The magnetic layer 123, or at least two of the first to third magnetic layers. In addition, in the above embodiments, the magnetic material is described as an example of a magnetic body constituting a coil component or a magnetic core of a multilayer inductor, but it is not limited to this, and the present invention can also be applied to motors, Magnetic materials used for electromagnetic parts such as actuators, generators, reactors, chokes, etc.

10‧‧‧線圈零件 11‧‧‧零件本體 12‧‧‧磁性體部 13‧‧‧線圈部 13e1‧‧‧引出端部 13e2‧‧‧引出端部 14、15‧‧‧外部電極 121‧‧‧第1磁性層 121S‧‧‧磁性片材 122‧‧‧第2磁性層 123‧‧‧第3磁性層 C11~C17‧‧‧導體圖案 F1‧‧‧氧化物 F11‧‧‧第1氧化膜 F12‧‧‧第2氧化膜 F13‧‧‧第3氧化膜 F2‧‧‧氧化物 F21‧‧‧第1氧化膜 F22‧‧‧第2氧化膜 F23‧‧‧第3氧化膜 F24‧‧‧第4氧化膜 H‧‧‧高度 L‧‧‧長度 ML1~ML17‧‧‧磁性體層 MLD‧‧‧磁性體層 MLU‧‧‧磁性體層 P1‧‧‧軟磁性合金粒子 P2‧‧‧軟磁性合金粒子 V1‧‧‧結合部 V2‧‧‧結合部 V3‧‧‧通孔 W‧‧‧寬度10‧‧‧Coil parts 11‧‧‧Part body 12‧‧‧Magnetic body 13‧‧‧Coil section 13e1‧‧‧Lead end 13e2‧‧‧Lead end 14,15‧‧‧External electrode 121‧‧‧The first magnetic layer 121S‧‧‧Magnetic Sheet 122‧‧‧Second magnetic layer 123‧‧‧3rd magnetic layer C11~C17‧‧‧Conductor pattern F1‧‧‧Oxide F11‧‧‧The first oxide film F12‧‧‧Second oxide film F13‧‧‧The third oxide film F2‧‧‧Oxide F21‧‧‧The first oxide film F22‧‧‧Second oxide film F23‧‧‧The third oxide film F24‧‧‧The fourth oxide film H‧‧‧Height L‧‧‧Length ML1~ML17‧‧‧Magnetic layer MLD‧‧‧Magnetic layer MLU‧‧‧Magnetic layer P1‧‧‧Soft magnetic alloy particles P2‧‧‧Soft magnetic alloy particles V1‧‧‧Combination V2‧‧‧Combination V3‧‧‧Through hole W‧‧‧Width

圖1係本發明之一實施形態之線圈零件之全體立體圖。 圖2係圖1中之A-A線剖視圖。 圖3係上述積層電感器之零件本體之分解立體圖。 圖4係圖1中之B-B線剖視圖。 圖5係模式性表示構成上述線圈零件之第1磁性層之磁性體中之氧化膜的微細構造之剖視圖。 圖6係模式性表示構成上述第1磁性層之磁性體中之氧化膜的積層構造之剖視圖。 圖7係模式性表示構成上述線圈零件之第2磁性層之磁性體中之氧化膜的微細構造之剖視圖。 圖8係模式性表示構成上述第2磁性層之磁性體中之氧化膜的積層構造之剖視圖。 圖9A～C係說明上述線圈零件之磁性體層之製造方法的主要部分之概略剖視圖。 圖10係說明3點彎曲破斷應力之測定方法之模式圖。 圖11係模式性表示利用比較例所示之方法形成於合金粒子之表面的SiO2 微粒子之狀態之粒子剖視圖。 圖12係模式性表示利用實施例所示之方法形成於合金粒子之表面的塗佈層之狀態之粒子剖視圖。Fig. 1 is an overall perspective view of a coil component according to an embodiment of the present invention. Fig. 2 is a cross-sectional view taken along line AA in Fig. 1. Fig. 3 is an exploded perspective view of the component body of the above-mentioned multilayer inductor. Fig. 4 is a cross-sectional view taken along line BB in Fig. 1. 5 is a cross-sectional view schematically showing the fine structure of the oxide film in the magnetic body constituting the first magnetic layer of the coil component. FIG. 6 is a cross-sectional view schematically showing the laminated structure of the oxide film in the magnetic body constituting the first magnetic layer. Fig. 7 is a cross-sectional view schematically showing the fine structure of the oxide film in the magnetic body constituting the second magnetic layer of the coil component. FIG. 8 is a cross-sectional view schematically showing the laminated structure of the oxide film in the magnetic body constituting the second magnetic layer. 9A to C are schematic cross-sectional views illustrating main parts of the method of manufacturing the magnetic layer of the coil component. Fig. 10 is a schematic diagram illustrating the measuring method of the 3-point bending breaking stress. 11 is a particle cross-sectional view schematically showing the state of SiO 2 fine particles formed on the surface of alloy particles by the method shown in the comparative example. Fig. 12 is a particle cross-sectional view schematically showing the state of the coating layer formed on the surface of the alloy particle by the method shown in the embodiment.

F2‧‧‧氧化物 F2‧‧‧Oxide

F21‧‧‧第1氧化膜 F21‧‧‧The first oxide film

F22‧‧‧第2氧化膜 F22‧‧‧Second oxide film

F23‧‧‧第3氧化膜 F23‧‧‧The third oxide film

F24‧‧‧第4氧化膜 F24‧‧‧The fourth oxide film

P2‧‧‧軟磁性合金粒子 P2‧‧‧Soft magnetic alloy particles

V2‧‧‧結合部 V2‧‧‧Combination

Claims (11)

一種磁性材料，其具備：複數個軟磁性合金粒子，其等包含Fe、元素L(其中，元素L為Si、Zr、Ti之任一者)及元素M(其中，元素M為除Si、Zr、Ti以外且較Fe更容易氧化之元素)；第1氧化膜，其包含較元素M更多之元素L，且分別覆蓋上述複數個軟磁性合金粒子；第2氧化膜，其包含較元素L更多之元素M，且覆蓋上述第1氧化膜；非晶質之第3氧化膜，其包含較元素M更多之元素L，且覆蓋上述第2氧化膜；第4氧化膜，其包含較元素L更多之Fe，且覆蓋上述第3氧化膜；及結合部，其由上述第4氧化膜之一部分構成，將上述複數個軟磁性合金粒子彼此結合；且上述第4氧化膜之Fe含量較上述第1至第3氧化膜之任一者更多。 A magnetic material comprising: a plurality of soft magnetic alloy particles, which include Fe, element L (wherein element L is any one of Si, Zr, Ti), and element M (wherein element M is in addition to Si, Zr) , Elements other than Ti and easier to oxidize than Fe); the first oxide film, which contains more element L than element M, and respectively covers the plurality of soft magnetic alloy particles; the second oxide film, which contains the element L More element M, and cover the first oxide film; an amorphous third oxide film, which contains more element L than element M, and covers the second oxide film; the fourth oxide film, which contains more The element L is more Fe and covers the third oxide film; and the bonding portion, which is composed of a part of the fourth oxide film, combines the plurality of soft magnetic alloy particles with each other; and the Fe content of the fourth oxide film It is more than any of the above-mentioned first to third oxide films. 如請求項1之磁性材料，其中元素M為Cr。 Such as the magnetic material of claim 1, wherein the element M is Cr. 如請求項1之磁性材料，其中元素L為Si。 Such as the magnetic material of claim 1, wherein the element L is Si. 如請求項2之磁性材料，其中 元素L為Si。 Such as the magnetic material of claim 2, where Element L is Si. 如請求項1至4中任一項之磁性材料，其中上述第3氧化膜具有上述第1氧化膜之厚度以上之厚度。 The magnetic material according to any one of claims 1 to 4, wherein the third oxide film has a thickness greater than that of the first oxide film. 如請求項1至4中任一項之磁性材料，其中上述第3氧化膜具有1nm以上且20nm以下之厚度。 The magnetic material according to any one of claims 1 to 4, wherein the third oxide film has a thickness of 1 nm or more and 20 nm or less. 如請求項5之磁性材料，其中上述第3氧化膜具有1nm以上且20nm以下之厚度。 The magnetic material of claim 5, wherein the third oxide film has a thickness of 1 nm or more and 20 nm or less. 如請求項1至4中任一項之磁性材料，其中複數個軟磁性合金粒子各被作為第1氧化膜之被覆層覆蓋，該被覆層由非晶質之氧化矽構成，並覆蓋各粒子之實質全部表面。 The magnetic material according to any one of claims 1 to 4, wherein a plurality of soft magnetic alloy particles are each covered by a coating layer as a first oxide film, the coating layer is composed of amorphous silicon oxide and covers the particles Substantially all surface. 如請求項8之磁性材料，其中上述被覆層具有1nm以上且未達25nm之厚度。 The magnetic material of claim 8, wherein the coating layer has a thickness of 1 nm or more and less than 25 nm. 一種磁性材料，其具備：複數個軟磁性合金粒子，其等包含Fe、元素L(其中，元素L為Si、Zr、Ti之任一者)及元素M(其中，元素M為除Si、Zr、Ti以外且較Fe更容易氧化之元素)；第1氧化膜，其包含較元素M更多之元素L，且分別覆蓋上述複數個 軟磁性合金粒子；第2氧化膜，其包含較元素L更多之元素M，且覆蓋上述第1氧化膜；非晶質之第3氧化膜，其包含較元素M更多之元素L，且覆蓋上述第2氧化膜；及第4氧化膜，其包含較元素L更多之Fe，且覆蓋上述第3氧化膜；且上述第4氧化膜之Fe含量較上述第1至第3氧化膜之任一者更多。 A magnetic material comprising: a plurality of soft magnetic alloy particles, which include Fe, element L (wherein element L is any one of Si, Zr, Ti), and element M (wherein element M is in addition to Si, Zr) , Elements other than Ti and easier to oxidize than Fe); the first oxide film, which contains more element L than element M, and covers the plurality of elements mentioned above respectively Soft magnetic alloy particles; a second oxide film containing more element M than element L and covering the first oxide film; an amorphous third oxide film containing more element L than element M, and Covering the second oxide film; and a fourth oxide film containing more Fe than element L and covering the third oxide film; and the Fe content of the fourth oxide film is higher than that of the first to third oxide films Any one is more. 一種電子零件，其具備含有如請求項1至10中任一項之磁性材料之磁芯。 An electronic component provided with a magnetic core containing a magnetic material as claimed in any one of claims 1 to 10.
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI630627B (en) * 2016-12-30 2018-07-21 財團法人工業技術研究院 Magnetic material and magnetic component employing the same
JP6930722B2 (en) * 2017-06-26 2021-09-01 太陽誘電株式会社 Manufacturing method of magnetic material, electronic component and magnetic material
JP6429055B1 (en) * 2018-03-09 2018-11-28 Tdk株式会社 Soft magnetic metal powder, dust core and magnetic parts
JP7246143B2 (en) * 2018-06-21 2023-03-27 太陽誘電株式会社 Magnetic substrate containing metal magnetic particles and electronic component containing said magnetic substrate
JP7299000B2 (en) * 2018-08-09 2023-06-27 太陽誘電株式会社 Magnetic substrate containing metal magnetic particles and electronic component containing said magnetic substrate
KR20200066187A (en) * 2018-11-30 2020-06-09 신토고교 가부시키가이샤 Insulation coated soft magnetic alloy powder
JP7359021B2 (en) * 2019-03-28 2023-10-11 Tdk株式会社 Soft magnetic metal powder and magnetic parts
CN111755197B (en) 2019-03-28 2023-09-26 Tdk株式会社 Soft magnetic metal powder and magnetic component
JP7345778B2 (en) * 2019-07-17 2023-09-19 三菱マテリアル株式会社 Manufacturing method of electronic components
US11742141B2 (en) 2020-03-27 2023-08-29 Murata Manufacturing Co., Ltd. Metal magnetic particle, inductor, method for manufacturing metal magnetic particle, and method for manufacturing metal magnetic core
JP7456233B2 (en) 2020-03-27 2024-03-27 株式会社村田製作所 Metal magnetic particles, inductor, method for manufacturing metal magnetic particles, and method for manufacturing metal magnetic core
JP7459639B2 (en) * 2020-04-28 2024-04-02 Tdk株式会社 Composite particles, cores and electronic components
KR20230141569A (en) 2022-03-31 2023-10-10 티디케이가부시기가이샤 Dust core and magnetic component
KR102690376B1 (en) 2022-03-31 2024-08-05 티디케이가부시기가이샤 Soft magnetic metal particle, dust core, and magnetic component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201237894A (en) * 2011-04-27 2012-09-16 Taiyo Yuden Kk Magnetic material and coil component using the same

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4560784B2 (en) * 2004-02-24 2010-10-13 日立金属株式会社 Fine metal particles, method for producing the same, and magnetic beads
JP2007194273A (en) * 2006-01-17 2007-08-02 Jfe Steel Kk Dust core and soft magnetic metal powder therefor
JP5099480B2 (en) * 2007-02-09 2012-12-19 日立金属株式会社 Soft magnetic metal powder, green compact, and method for producing soft magnetic metal powder
JP2009059787A (en) * 2007-08-30 2009-03-19 Sumitomo Electric Ind Ltd Soft magnetic material and dust core
CN102282634A (en) * 2009-01-16 2011-12-14 松下电器产业株式会社 Process for producing composite magnetic material, dust core formed from same, and process for producing dust core
JP4866971B2 (en) * 2010-04-30 2012-02-01 太陽誘電株式会社 Coil-type electronic component and manufacturing method thereof
JP5492155B2 (en) * 2010-04-30 2014-05-14 太陽誘電株式会社 Coil type electronic components
JP5728987B2 (en) * 2010-09-30 2015-06-03 Tdk株式会社 Dust core
JP5082002B1 (en) * 2011-08-26 2012-11-28 太陽誘電株式会社 Magnetic materials and coil parts
JP6091744B2 (en) * 2011-10-28 2017-03-08 太陽誘電株式会社 Coil type electronic components
JP2014143286A (en) * 2013-01-23 2014-08-07 Tdk Corp Soft magnetic material composition, method for producing the same, magnetic core, and coil type electronic component
KR20150002172A (en) * 2013-06-28 2015-01-07 삼성전기주식회사 Composite and method for forming the composite, and inductor manufactured using the composite
JP6561314B2 (en) * 2013-08-07 2019-08-21 パナソニックＩｐマネジメント株式会社 Composite magnetic material, coil component using the same, and power supply device
KR101994722B1 (en) * 2013-10-14 2019-07-01 삼성전기주식회사 Multilayered electronic component
JP6358491B2 (en) * 2013-12-26 2018-07-18 日立金属株式会社 Dust core, coil component using the same, and method for manufacturing dust core
JP6399299B2 (en) * 2013-12-26 2018-10-03 Tdk株式会社 Soft magnetic powder magnetic core
CN105917422B (en) * 2014-01-14 2018-05-15 日立金属株式会社 Magnetic core and the coil component using magnetic core
JP2015135900A (en) * 2014-01-17 2015-07-27 トヨタ自動車株式会社 reactor
KR101881246B1 (en) * 2014-10-10 2018-07-23 가부시키가이샤 무라타 세이사쿠쇼 Soft magnetic material powder and method for producing same, and magnetic core and method for producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201237894A (en) * 2011-04-27 2012-09-16 Taiyo Yuden Kk Magnetic material and coil component using the same

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