TWI728656B - Generation apparatus, substrate processing apparatus, and substrate processing mehtod - Google Patents

Abstract

A generation apparatus (30) generates from sulfuric acid caroric acid used for processing a substrate (W). The generation apparatus (30) includes an exhaustion section (311) and a generation section (35). The exhaustion section (311) exhausts sulfuric acid. The generation section (35) generates a plasma. A plasma generating region (E) is located above a moving path of the sulfuric acid exhausted from the exhaustion section (311). The exhaustion section (311) preferably generates liquid drops (α) of the sulfuric acid as a result of mixing of the sulfuric acid with the air.

Description

Generating device, substrate processing device and substrate processing method

The present invention relates to a generating device, a substrate processing device and a substrate processing method.

The Caro's acid generator described in Patent Document 1 has a plasma generation means and a plasma irradiation chamber. The plasma generation means is to generate oxygen plasma. The plasma irradiation chamber irradiates the solution containing sulfuric acid stored in the resist removal tank with oxygen plasma, thereby generating caloric acid. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Application Laid-Open No. 2002-53312.

[The problem to be solved by the invention]

However, in the caroic acid generator described in Patent Document 1, oxygen plasma is irradiated only to a specific part of the sulfuric acid (treatment liquid) stored in the resist removal tank. The specific part is the part located on the surface layer in the sulfuric acid stored in the resist removal tank. Therefore, since sulfuric acid other than the sulfuric acid in the surface layer does not contribute to the production of caronic acid (treatment fluid), it is difficult to efficiently generate caronic acid.

The object of the present invention is to provide a generating device, a substrate processing device, and a substrate processing method that can efficiently generate a processing fluid from a processing liquid. [Means to solve the problem]

According to the first aspect of the present invention, the generating device generates a processing fluid used in the processing of the substrate from the processing liquid. The generating device is provided with a discharge part and a generating part. The discharge part discharges the aforementioned processing liquid. The generating unit generates plasma. The plasma generation area is located on the moving path of the processing liquid discharged from the discharge part.

In the production device of the present invention, the aforementioned treatment stream system contains caronic acid. The aforementioned treatment liquid system contains sulfuric acid.

In the generating device of the present invention, the discharge part mixes the processing liquid and the gas, thereby generating droplets of the processing liquid.

In the production device of the present invention, the discharge section has a first supply port, a second supply port, a third supply port, a discharge port, a first passage, and a second passage. The gas is supplied to the first supply port. The aforementioned processing liquid is supplied to the second supply port. The aforementioned gas is supplied to the third supply port. The discharge port is connected to the aforementioned third supply port. The first passage is connected to the first supply port and to the discharge port. The second passage communicates with the second supply port and communicates with the first passage.

In the production device of the present invention, the discharge section has a first supply port, a second supply port, a first discharge port, and a second discharge port. The gas is supplied to the first supply port. The aforementioned processing liquid is supplied to the second supply port. The first discharge port is connected to the aforementioned second supply port. The second discharge port is formed to surround the first discharge port, and is connected to the first supply port.

In the production device of the present invention, the aforementioned gas system contains at least one of oxygen, nitrogen, argon, and helium.

The generating device of the present invention is further provided with a pipe section. The pipe part protrudes from the aforementioned discharge part. The region where the plasma is generated is located inside the tube.

In the generator of the present invention, the aforementioned plasma is inductively coupled plasma (IPC; inductively coupled plasma).

In the generating device of the present invention, the generating unit generates oxygen plasma under normal pressure.

The generating device of the present invention is further provided with a temperature control mechanism. The temperature control mechanism controls the temperature of the aforementioned plasma generation area.

According to a second aspect of the present invention, the substrate processing apparatus is provided with the aforementioned generating device. The substrate processing device supplies the processing fluid generated by the generating device to the substrate.

According to a third aspect of the present invention, the substrate processing method includes the following steps: mixing gas and sulfuric acid, thereby generating droplets of the aforementioned sulfuric acid. The substrate processing method is provided with a step of moving the aforementioned sulfuric acid droplets in the plasma generation region to thereby generate caronic acid. The substrate processing method is provided with a step of supplying the aforementioned caronic acid to the substrate. [Efficacy of invention]

According to the generating device, the substrate processing device, and the substrate processing method of the present invention, the processing fluid can be efficiently generated from the processing liquid.

The embodiments of the present invention will be described with reference to the drawings. In addition, in the figures, the same reference numerals are attached to the same or corresponding parts and the description is not repeated.

A substrate processing apparatus 100 according to an embodiment of the present invention will be described with reference to FIG. 1. FIG. 1 is a plan view schematically showing the structure of a substrate processing apparatus 100 according to an embodiment of the present invention.

As shown in FIG. 1, the substrate processing apparatus 100 is a blade-type apparatus for processing substrates W piece by piece. The substrate processing apparatus 100 processes the substrate W in such a manner as to perform at least one of etching, surface treatment, property imparting, processing film formation, removal of at least a part of the film, and cleaning of the substrate W.

The substrate W has a thin plate shape. Typically, the substrate W is thin and slightly disc-shaped. The substrate W includes, for example, semiconductor wafers, substrates for liquid crystal display devices, substrates for field emission displays (FED; Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for optical magnetic disks, and substrates for photomasks. , Ceramic substrates and substrates for solar cells.

The substrate processing apparatus 100 is provided with a plurality of load ports LP, a plurality of processing units 1, a storage unit 2, and a control unit 3.

The load port LP holds a carrier C that houses the substrate W. The processing unit 1 processes the substrate W conveyed from the load port LP.

The memory unit 2 includes a main memory device (such as a semiconductor memory) such as ROM (Read Only Memory) and RAM (Random Access Memory), and may further include auxiliary memory Devices (such as hard disk drives). The main memory device and/or the auxiliary memory device memorize various computer programs executed by the control unit 3.

The control unit 3 includes a processor such as a CPU (Central Processing Unit) and an MPU (Micro Processing Unit). The control unit 3 controls each element of the substrate processing apparatus 100.

The substrate processing apparatus 100 is further provided with a transfer robot. The transfer robot transfers the substrate W between the load port LP and the processing unit 1. The handling robot system includes indexer robot IR and center robot CR. The index robot IR transports the substrate W between the load port LP and the center robot CR. The center robot CR transfers the substrate W between the index robot IR and the processing unit 1. The index robot IR and the center robot CR each include a hand for supporting the substrate W.

A plurality of processing units 1 are stacked up and down to form a tower U. The substrate processing apparatus 100 includes a plurality of towers U. The plurality of towers U are arranged so as to surround the central robot CR when viewed from above.

In this embodiment, each tower U system includes three processing units 1. In addition, there are four tower U series. In addition, the number of processing units 1 used to form the tower U is not particularly limited. In addition, the number of towers U is not particularly limited.

The processing unit 1 will be described with reference to FIG. 2. FIG. 2 is a side view schematically showing the structure of the processing unit 1.

As shown in FIG. 2, the processing unit 1 includes a chamber 6, a spin chuck 10 and a cup 14.

The chamber 6 includes a partition wall 8, a shutter 9 and an FFU (fan filter unit; fan filter unit) 7. The partition wall 8 has a hollow shape. A transfer port is provided in the neighboring wall 8. The blocking door 9 opens and closes the conveyance port. The FFU 7 forms a down flow of clean air in the chamber 6. Clean air is the air that has been filtered by a filter.

The center robot CR (refer to FIG. 1) carries the substrate W into the chamber 6 through the transfer port, and unloads the substrate W from the chamber 6 through the transfer port.

The rotation jig 10 is arranged in the chamber 6. The rotation jig 10 rotates the substrate W around the rotation axis A1 while holding the substrate W horizontally. The rotation axis A1 is a vertical axis passing through the center of the substrate W.

The rotation jig 10 includes a plurality of chuck pins 11, a spin base 12, a spin motor 13, a cover 14 and a cover lifting unit 15.

The rotation base 12 is a disc-shaped member. A plurality of clamp pins 11 are attached to the rotation base 12 to hold the substrate W in a horizontal posture. The rotation motor 13 rotates the plurality of clamp pins 11, thereby rotating the substrate W around the rotation axis A1.

The rotation jig 10 of the present embodiment is a clamp-type jig for bringing a plurality of jig pins 11 into contact with the outer peripheral surface of the substrate W. However, the present invention is not limited to this. The rotation jig 10 may also be a vacuum-type jig. The vacuum-type jig makes the back surface (lower surface) of the substrate W, which is a non-device forming surface, adsorb to the upper surface of the rotation base 12, thereby holding the substrate W horizontally.

The cover 14 catches the liquid discharged from the substrate W. The cover 14 includes an inclined portion 14a, a guide portion 14b, and a liquid receiving portion 14c. The inclined portion 14a is a cylindrical member extending obliquely upward toward the rotation axis A1. The inclined portion 14 a includes a ring-shaped upper end having an inner diameter larger than that of the substrate W and the rotation base 12. The upper end of the inclined portion 14a corresponds to the upper end of the cover 14. When viewed from above, the upper end of the cover 14 surrounds the substrate W and the rotation base 12. The guide portion 14b is a cylindrical member extending downward from the lower end (outer end) of the inclined portion 14a. The liquid receiving portion 14c is located at the lower part of the guide portion 14b, and forms a ring-shaped groove open upward.

The cover raising and lowering unit 15 raises and lowers the cover 14 between the raised position and the lowered position. When the cover 14 is in the raised position, the upper end of the cover 14 is located above the rotation jig 10. When the cover 14 is in the lowered position, the upper end of the cover 14 is located below the rotation jig 10.

When the liquid is supplied to the substrate W, the cover 14 is located in the raised position. The liquid system that has scattered to the outside from the substrate W is caught by the inclined portion 14a, and is collected in the liquid receiving portion 14c via the guide portion 14b.

The processing unit 1 further includes a rinse liquid nozzle 16, a rinse liquid pipe 17, and a rinse liquid valve 18. The cleaning liquid nozzle 16 ejects the cleaning liquid toward the substrate W held by the rotation jig 10. The cleaning liquid nozzle 16 is connected to the cleaning liquid piping 17. The cleaning liquid piping 17 is connected to a supply source of the cleaning liquid. A cleaning liquid valve 18 is sandwiched between the cleaning liquid piping 17.

When the cleaning liquid valve 18 is opened, the cleaning liquid is supplied from the cleaning liquid pipe 17 to the cleaning liquid nozzle 16. Then, the cleaning liquid system is ejected from the cleaning liquid nozzle 16. The cleaning fluid is, for example, pure water (DIW (Deionized Water)). The cleaning fluid system is not limited to pure water, and may be carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and/or diluted hydrochloric acid water. The dilution concentration is, for example, a concentration of 10 ppm or more and 100 ppm or less.

The processing unit 1 further includes a first chemical liquid nozzle 21, a first chemical liquid pipe 22 and a first chemical liquid valve 23. The first chemical liquid nozzle 21 ejects an alkaline chemical liquid toward the substrate W held by the rotation jig 10. In this embodiment, the alkaline chemical solution is SC1. SC1 is a mixed liquid of ammonia, hydrogen peroxide, and water. The first chemical liquid nozzle 21 is connected to the first chemical liquid pipe 22. The first chemical solution pipe 22 is connected to the supply source of SC1. A first liquid medicine valve 23 is sandwiched between the first liquid medicine pipe 22.

The processing unit 1 further includes a second chemical liquid nozzle 24, a second chemical liquid pipe 25 and a second chemical liquid valve 26. The second chemical liquid nozzle 24 ejects a DHF (dilute hydrofluoric acid) chemical liquid toward the substrate W held by the rotation jig 10. The second chemical liquid nozzle 24 is connected to the second chemical liquid pipe 25. The second chemical solution pipe 25 is connected to a supply source of the DHF chemical solution. A second liquid medicine valve 26 is sandwiched between the second liquid medicine pipe 25.

The processing unit 1 further includes a generating device 30. The generating device 30 generates caronic acid from sulfuric acid. The generating device 30 includes a third chemical liquid nozzle 31 and a nozzle moving unit 32. The third chemical liquid nozzle 31 ejects caronic acid toward the substrate W held by the rotation jig 10. The nozzle moving unit 32 moves the third chemical liquid nozzle 31 between the processing position and the retracted position. The processing position indicates the position where the third chemical liquid nozzle 31 ejects the caroic acid toward the substrate W. In this embodiment, the processing position is the following position: the substrate W is located on the extension line of the sulfuric acid movement path R (refer to FIG. 7) used for the third chemical liquid nozzle 31, and the third chemical liquid nozzle 31 becomes the closest to the substrate W. That is, when the third chemical liquid nozzle 31 is located at the processing position, the generation area E (see FIG. 7) is located near the substrate W at a close distance. The retracted position indicates the position where the third chemical liquid nozzle 31 has moved away from the substrate W. The nozzle moving unit 32 moves the third chemical liquid nozzle 31 by rotating the third chemical liquid nozzle 31 around the swing axis A2, for example. The swing axis A2 is a vertical axis located at the periphery of the cover 14.

Carolic acid is the first example of the treatment fluid of the present invention.

Next, the generating device 30 will be described with reference to FIG. 3. FIG. 3 is a diagram schematically showing the structure of the generating device 30.

The structure of the third chemical liquid nozzle 31 will be described. As shown in FIG. 3, the third chemical liquid nozzle 31 has a discharge part 311.

The discharge part 311 discharges droplets of sulfuric acid. The discharge part 311 has a main body part 31a, a first supply port 31b, a second supply port 31c, a third supply port 31d, a discharge port 31e, a first passage 31f, a second passage 31g, and a third passage 31h.

The main body portion 31a is used to form a structure of the discharge portion 311.

The first supply port 31b, the second supply port 31c, the third supply port 31d, and the discharge port 31e are openings formed on the outer surface of the main body portion 31a, and the first passage 31f, the second passage 31g, and the third passage 31h are formed in The hollow portion in the main body 31a.

The first passage 31f communicates with the first supply port 31b and communicates with the discharge port 31e. The first passage 31f has a first outer passage 311f, a second outer passage 312f, and a first communication passage 313f. The first outer passage 311f communicates with the second outer passage 312f via the first communication passage 313f.

In addition, the first passage 31f may be formed in a ring shape with the third passage 31h as the center.

The second passage 31g is arranged inside the first passage 31f. The second passage 31g communicates with the second supply port 31c and communicates with the first passage 31f. The second passage 31g has a first inner passage 311g, a second inner passage 312g, and a second communication passage 313g. The first inner passage 311g communicates with the second inner passage 312g via the second communication passage 313g.

In addition, the second passage 31g may be formed in a ring shape with the third passage 31h as the center.

The third passage 31h is arranged inside the second passage 31g. The third passage 31h communicates with the third supply port 31d and communicates with the discharge port 31e. As a result, the discharge port 31e communicates with the third supply port 31d via the third passage 31h.

The first passage 31f has a communication portion G. The communicating portion G is a portion of the first passage 31f that communicates with the second passage 31g. The communicating portion G is arranged in the middle of the first passage 31f.

The third chemical liquid nozzle 31 is further provided with a tube portion 312. The pipe portion 312 is formed in a tube shape with open ends. The tube portion 312 only needs to have a hollow shape with open ends, and is not limited to a cylindrical shape. The shape of the pipe portion 312 may be, for example, an angular cylindrical shape in which both ends of a hollow polygonal column member are opened.

The pipe portion 312 is formed integrally with the discharge portion 311. In addition, the tube portion 312 may be a separate individual from the discharge portion 311. In this case, the pipe portion 312 can be fixed to the discharge portion 311 or separated from the discharge portion 311.

The pipe portion 312 and the discharge portion 311 are formed of, for example, quartz. In addition, in the case where the discharge part 311 and the pipe part 312 are separate entities, the discharge part 311 may be a resin or a member in which a metal is coated with a resin.

The base end portion 31q of the pipe portion 312 is connected to the discharge port 31e of the discharge portion 311. The pipe portion 312 protrudes from the discharge port 31e.

The pipe portion 312 has an inflow port 31m and a discharge port 31n. The inflow port 31m is formed in the base end portion 31q, communicates with the discharge port 31e, and communicates with the interior 31p of the pipe portion 312. The ejection port 31n is formed in the tip portion 31r, communicates with the inside 31p of the pipe portion 312, and communicates with the outside of the pipe portion 312. The ejection port 31n ejects caloric acid.

The production device 30 further includes a chemical liquid supply unit 33.

The chemical liquid supply part 33 supplies the liquid containing sulfuric acid to the discharge part 311. The liquid medicine supply unit 33 has a third liquid medicine pipe 33a and a third liquid medicine valve 33b.

The third chemical solution pipe 33a is connected to a supply source of sulfuric acid. The third medical solution pipe 33a is connected to the second supply port 31c. The third chemical liquid pipe 33a supplies the liquid containing sulfuric acid to the second passage 31g via the second supply port 31c. A third liquid medicine valve 33b is sandwiched between the third liquid medicine pipe 33a. The third chemical solution valve 33b opens and closes the flow path of the sulfuric acid liquid formed in the third chemical solution pipe 33a.

Liquid system containing sulfuric acid The first example of the treatment liquid of the present invention.

The generating device 30 further includes a gas supply unit 34.

The gas supply part 34 supplies gas to the discharge part 311. The gas system includes at least one of oxygen, nitrogen, argon, and helium.

The gas supply unit 34 has a first gas pipe 34a, a second gas pipe 34b, a first gas valve 34c, and a second gas valve 34d.

The first gas pipe 34a is connected to a gas supply source. The first gas pipe 34a communicates with the first supply port 31b. The first gas pipe 34a supplies gas to the first passage 31f through the first supply port 31b. A first gas valve 34c is interposed between the first gas pipe 34a. The first gas valve 34c opens and closes the gas flow path formed inside the first gas pipe 34a.

The second gas pipe 34b is connected to a gas supply source. The second gas pipe 34b communicates with the third supply port 31d. The second gas pipe 34b supplies gas to the third passage 31h via the third supply port 31d. A second gas valve 34d is interposed between the second gas pipe 34b. The second gas valve 34d opens and closes the gas flow path formed inside the second gas pipe 34b.

The generating device 30 further includes a generating unit 35.

The generating unit 35 generates plasma. The plasma is generated by the gas supplied by the gas supply unit 34. The generating unit 35 adopts, for example, an inductively coupled plasma (IPC) method, and generates inductively coupled plasma.

Hereinafter, the region where the generation portion 35 generates plasma may be referred to as the plasma generation region E. The generation area E is located inside 31 p of the pipe portion 312.

The generating unit 35 has a coil 351 and a power supply unit 352. A tube portion 312 is arranged inside the coil 351. The power supply unit 352 is connected to the coil 351. The power supply unit 352 flows a current through the coil 351 and induces a magnetic field in the coil 351 to generate high-temperature plasma in the generation area E, for example, from 200° C. to 2000° C. or less. As a result, the oxygen gas is excited in the generation region E and oxygen plasma containing oxygen radicals and oxygen ions is generated. Oxygen plasma is generated under slightly normal pressure. In other words, the generation area E is the area inside the coil 351.

The generating device 30 is further provided with a temperature control mechanism 36.

The temperature control mechanism 36 controls the temperature of the generation area E. The temperature control mechanism 36 has a wall portion 361, a cooling passage portion 362, a cooling pipe 363, and a cooling valve 364. The wall portion 361 is connected to the front end portion 31r of the pipe portion 312, and is formed to surround the pipe portion 312. The cooling passage portion 362 is formed in a hollow portion between the pipe portion 312 and the wall portion 361. The cooling pipe 363 communicates with the supply source of the cooling material. In this embodiment, the cooling material is cold water. The cooling pipe 363 communicates with the cooling passage portion 362. The cooling pipe 363 supplies cold water to the cooling passage portion 362. As a result, the temperature rise of the generation area E is suppressed. A cooling valve 364 is interposed between the cooling pipe 363. The cooling valve 364 opens and closes the flow path of the cold water formed in the cooling pipe 363.

Next, an example of processing for the substrate W performed by the substrate processing apparatus 100 will be described with reference to FIGS. 2 and 4. FIG. 4 is a flowchart showing an example of processing for the substrate W performed by the substrate processing apparatus 100. As shown in FIG.

As shown in FIG. 2 and FIG. 4, in step S1, the control unit 3 performs a substrate carry-in process for carrying the substrate W into the chamber 6. Hereinafter, the procedure of the substrate loading process will be described.

First, in a state where the first chemical liquid nozzle 21 is retracted from above the substrate W, the center robot CR allows the hand to enter the chamber 6 while supporting the substrate W with its hand. Next, the center robot CR places the substrate W supported by the hand on the rotation jig 10. As a result, the substrate W is transferred to the rotation jig 10.

When the substrate W is transported to the rotation jig 10, the jig pin 11 grips the substrate W. Next, the autorotation motor 13 rotates the clamp pin 11. As a result, the substrate W rotates. When the substrate W rotates, the processing system proceeds to step S2.

In step S2, the control unit 3 performs DHF supply processing for supplying the DHF chemical liquid from the second chemical liquid nozzle 24 to the main surface Wa of the substrate W. The control unit 3 controls the second chemical liquid valve 26 and opens the second chemical liquid valve 26, whereby the DHF chemical liquid is ejected from the second chemical liquid nozzle 24 toward the main surface Wa of the rotating substrate W. The DHF chemical solution is sprayed on the main surface Wa of the substrate W, thereby removing the natural oxide film formed on the main surface Wa of the substrate W. When the DHF supply process ends, the second chemical liquid valve 26 is closed.

The main surface Wa of the substrate W is the upwardly facing surface of the substrate W in a state where the substrate W is held by the rotation jig 10.

In step S3, the control unit 3 performs a caloric acid supply process for supplying caloric acid from the third chemical liquid nozzle 31 to the main surface Wa of the substrate W. When the caroic acid supply process is performed, the caroic acid is ejected from the third chemical liquid nozzle 31 to the main surface Wa of the rotating substrate W. The caroic acid is sprayed onto the main surface Wa of the substrate W, whereby the resist film is removed from the main surface Wa of the substrate W.

In step S4, the control unit 3 performs SC1 supply processing for supplying SC1 from the first chemical liquid nozzle 21 to the main surface Wa of the substrate W. The control unit 3 controls the first chemical liquid valve 23 and opens the first chemical liquid valve 23, whereby SC1 is ejected from the first chemical liquid nozzle 21 toward the main surface Wa of the rotating substrate W. When SC1 is ejected onto the main surface Wa of the substrate W, the caroic acid on the main surface Wa of the substrate W is flushed to the outside by SC1 and discharged to the periphery of the substrate W. Then, the entire main surface Wa of the substrate W is covered with the liquid film of SC1. When the SC1 supply process ends, the first chemical liquid valve 23 is closed.

In step S5, the control unit 3 performs a cleaning liquid supply process for supplying a cleaning liquid from the cleaning liquid nozzle 16 to the main surface Wa of the substrate W. The control unit 3 controls the cleaning liquid valve 18 and opens the cleaning liquid valve 18, whereby the cleaning liquid is sprayed from the cleaning liquid nozzle 16 toward the main surface Wa of the rotating substrate W. The cleaning liquid is sprayed to the main surface Wa of the substrate W, whereby SC1 on the main surface Wa of the substrate W is flushed by the cleaning liquid. When the cleaning liquid supply process ends, the cleaning liquid valve 18 is closed.

In step S6, the control unit 3 performs a drying process for drying the substrate W by the rotation of the substrate W. Hereinafter, the procedure of the drying process will be described.

First, the rotation motor 13 rotates the substrate W at a high speed (for example, several thousand rpm) higher than the rotation speed of the substrate W during the chemical solution supply process and the rotation speed of the substrate W during the cleaning solution supply process. As a result, since the liquid is removed from the substrate W, the substrate W is dried.

When the substrate W starts to rotate at a high speed and a predetermined time has elapsed, the rotation motor 13 stops the rotation of the substrate W. When the rotation of the substrate W is stopped, the processing system proceeds to step S7.

In step S7, the control unit 3 carries out the unloading process in which the substrate W is unloaded from the chamber 6. Hereinafter, the procedure of the unloading process will be explained.

First, the cover raising and lowering unit 15 lowers the cover 14 to the lower position. Next, the central robot CR moves the hand into the chamber 6. Next, the plurality of clamp pins 11 release the grip of the substrate W.

After the plurality of clamp pins 11 release the grip of the substrate W, the center robot CR supports the substrate W on the rotation clamp 10 with its hands. Next, the center robot CR system retracts the hand from the inside of the chamber 6 while supporting the substrate W with the hand. As a result, the processed substrate W is carried out from the chamber 6.

When the processed substrate W is unloaded from the chamber 6, the unloading process shown in step S7 is ended.

The processing from step S1 to step S7 is repeated, thereby processing a plurality of substrates W conveyed to the processing unit 1 piece by piece.

Next, the caloric acid supply process in step S3 will be described with reference to FIGS. 3 to 7. Fig. 5 is a flow chart showing the process of supplying caloric acid. FIG. 6 is a first diagram showing the operation of the generating device 30. As shown in FIG. FIG. 7 is a second diagram showing the operation of the generating device 30. As shown in FIG.

As shown in FIGS. 4 and 5, when the processing shown in step S2 ends, the processing system proceeds to step S31.

As shown in FIG. 3, FIG. 5, and FIG. 6, in step S31, the control unit 3 performs a gas supply process for supplying gas to the discharge part 311. The gas system is supplied to the first supply port 31b and the third supply port 31d of the discharge portion 311.

The control unit 3 controls the first gas valve 34c and the second gas valve 34d and opens the first gas valve 34c and the second gas valve 34d, thereby supplying gas to the first supply port 31b and the third supply port 31d.

The gas K1 supplied to the first supply port 31b passes through the first passage 31f and reaches the discharge port 31e. The gas K2 supplied to the third supply port 31d passes through the third passage 31h and reaches the discharge port 31e. The gas K1 that has reached the discharge port 31e merges with the gas K2 and becomes the gas K3. The gas K3 flows into the interior 31p of the pipe portion 312 from the inlet 31m.

The gas K3 that has flowed into the interior 31p of the pipe portion 312 is discharged from the ejection port 31n to the outside of the pipe portion 312 after passing through the generation area E.

In step S32, the control unit 3 performs plasma generation processing, and the plasma generation processing generates plasma in the generation area E by the generation unit 35. Specifically, the control unit 3 causes the coil 351 to induce a magnetic field by passing current through the power supply unit 352 to the coil 351. As a result, plasma (oxygen plasma) is generated in the generation area E.

In step S33, the control unit 3 performs temperature control processing that controls the temperature of the generation area E. Specifically, the control unit 3 opens the cooling valve 364 to supply cold water to the cooling passage unit 362. As a result, the temperature rise of the generation area E is suppressed.

As shown in FIG. 3, FIG. 5, and FIG. 6, in step S34, the control part 3 performs a sulfuric acid supply process which supplies sulfuric acid to the discharge part 311. The sulfuric acid system is supplied to the second supply port 31c.

The control unit 3 controls the third chemical liquid valve 33b and opens the third chemical liquid valve 33b, thereby supplying sulfuric acid to the second supply port 31c.

The sulfuric acid system supplied to the second supply port 31c flows into the second passage 31g and flows in the second passage 31g.

In step S35, droplets α of sulfuric acid are generated. The sequence of generating droplets α of sulfuric acid will be described below.

The sulfuric acid system flowing in the second passage 31g reaches the communication portion G. The gas K1 touches the sulfuric acid that has reached the communication portion G. As a result, droplets α of sulfuric acid are generated.

The droplets α of sulfuric acid generated in the communication portion G pass through the first passage 31f, flow through the first passage 31f, and reach the discharge port 31e. The gas K2 hits the droplet α of sulfuric acid that has reached the discharge port 31e. As a result, the droplets α of sulfuric acid that have reached the discharge port 31e are induced from the discharge port 31e through the inflow port 31m to the generation area E located in the interior 31p of the pipe portion 312. In other words, the droplets α of sulfuric acid that have reached the discharge port 31e are induced to the generation area E by the fluid pressure of the gas K2.

In step S36, plasma treatment is performed, thereby generating caronic acid. The plasma treatment is a treatment of supplying sulfuric acid to the plasma generation area E. The following describes the sequence of producing calonic acid.

The droplet α of sulfuric acid that has flowed into the interior 31 p of the pipe portion 312 flows through the interior 31 p of the pipe portion 312 and reaches the generation area E. That is, the generation area E is located on the movement path R of sulfuric acid. The movement path R is located in the interior 31p of the pipe portion 312 and is formed in a direction from the flow passage port 31m of the pipe portion 312 to the ejection port 31n. In this embodiment, the sulfuric acid system moves along the movement path R in the state of the droplet α. In addition, in this embodiment, the movement path R is formed downward, and the sulfuric acid system falls along the movement path R. As shown in FIG. The generation area E is located inside 31 p of the pipe portion 312, so that the pipe portion 312 can guide the sulfuric acid toward the generation area E.

The droplets α of sulfuric acid are oxidized by oxygen plasma when the generation area E flows. As a result, calonic acid is generated from sulfuric acid in the generation area E. Specifically, a droplet β of calonic acid is generated from a droplet α of sulfuric acid.

In step S37, the droplets β of caronic acid are ejected from the ejection port 31n of the pipe portion 312 toward the outside of the pipe portion 312. Specifically, the gas containing the droplet β of caroic acid is released. The droplet β of caroic acid is ejected from the ejection port 31n by the pressure of the gas K3 (see FIG. 6).

The ejection port 31n of the pipe portion 312 is opposed to the main surface Wa (refer to FIG. 2) of the substrate W. The droplets β of caroic acid ejected from the ejection port 31 n of the pipe portion 312 are supplied to the main surface Wa of the substrate W. The droplets β of caronic acid are supplied to the main surface Wa of the substrate W, thereby removing the resist film from the main surface Wa of the substrate W by the acidizing force of the caronic acid. As a result, the caloric acid supply process ends. When the caloric acid supply process ends, the process system proceeds to step S4 shown in FIG. 4.

As described above with reference to FIGS. 3 to 7, the generation area E is located on the movement path R of sulfuric acid (refer to FIG. 7). Therefore, plasma is supplied to the moving sulfuric acid. As a result, since the plasma can be prevented from being irradiated to only a specific part of the sulfuric acid, the plasma can be efficiently supplied to the sulfuric acid, and the caroic acid can be efficiently produced. Efficient production of calonic acid means that caloric acid can be produced in large quantities for the amount of sulfuric acid used. In addition, in this embodiment, the substrate W (refer to FIG. 2) is located on the extension line of the movement path R of the sulfuric acid. Therefore, the sulfuric acid discharged from the discharge portion 311 is directed toward the substrate W along the movement path R. In addition, sulfuric acid of an amount sufficient for the processing of the substrate W is ejected from the discharge portion 311. As a result, sulfuric acid can be used without waste. In addition, in the present embodiment, when the third chemical liquid nozzle 31 supplies caronic acid to the substrate W, the substrate W is arranged at the position where the third chemical liquid nozzle 31 is closest to the substrate W on the extension line of the movement path R of sulfuric acid. . That is, the generation area E is located close to the substrate W. Therefore, it is possible to suppress the supply of caronic acid to places other than the substrate W, and it is possible to efficiently supply the caronic acid to the substrate W.

In addition, as shown in FIG. 7, the discharge part 311 mixes sulfuric acid and gas, thereby generating droplets α of sulfuric acid. Therefore, the droplets α of sulfuric acid can be supplied to the generation area E. As a result, since the plasma can be efficiently supplied to the entire area of the droplets α of the sulfuric acid, the caloric acid can be produced more efficiently.

In addition, supplying the droplets α of sulfuric acid to the generation area E makes it easier to supply plasma to the entire area of the droplets α of sulfuric acid, so that the size of the generation area E in the Z direction can be shortened. As a result, the generating device 30 can be made compact. The Z direction is the direction along the movement path R. In this embodiment, the Z direction is the vertical direction.

In addition, the temperature control mechanism 36 supplies a cooling material such as cold water to the periphery of the pipe portion 312, thereby limiting the temperature of the generation area E to a temperature within a predetermined range. The temperature within the predetermined range is, for example, a temperature of 150°C or higher and 200°C or lower. Therefore, since it is possible to suppress the vaporization of the caloric acid generated in the generation area E, the caloric acid can be ejected in the state of droplets β from the ejection port 31n of the pipe portion 312 in step S37. As a result, since the diffusion of the caloric acid ejected from the ejection port 31 n is suppressed, the caloric acid can be easily supplied to the substrate W. In addition, the generating device 30 may not include the temperature control mechanism 36. As a result, the portion where the temperature control mechanism 36 is not provided can simplify the device configuration of the generating device 30, which is advantageous in this point.

In addition, the generating device 30 may also have a temperature sensor for detecting the temperature of the generating area E. In this case, the control unit 3 adjusts the opening degree of the cooling valve 364 according to the detection value of the temperature sensor, thereby controlling the temperature of the generation area E to a temperature within a predetermined range.

The embodiments of the present invention have been described above with reference to the drawings (FIG. 1 to FIG. 10). However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various aspects (for example, (1) to (9)) within the scope not departing from the spirit of the present invention. In addition, by appropriately combining a plurality of constituent elements disclosed in the above-mentioned embodiments, various inventions can be formed. For example, some constituent elements may be deleted from all the constituent elements disclosed in the embodiment. For ease of understanding, the drawings schematically show the constituent elements as the main body, and the number of the constituent elements shown may be different from the actual situation due to the convenience of drawing. In addition, each component shown in the above-mentioned embodiment is an example, and is not specifically limited, Various changes can be made within the range which does not substantially deviate from the effect of this invention.

(1) For example, the size of the generation area E in the Z direction may be changed in accordance with the supply amount of sulfuric acid per unit time supplied to the first supply port 31b (see FIG. 7). Specifically, the larger the supply amount of sulfuric acid, the larger the size of the area E in the Z direction. In addition, the size of the generating area E in the Z direction is adjusted by changing the length of the coil 351, for example.

(2) It is also possible to cool the third chemical liquid nozzle 31 when the third chemical liquid nozzle 31 (refer to FIG. 1) is in the standby position. In this case, for example, the third chemical liquid nozzle 31 can also be cooled by injecting a stream of nitrogen gas. In addition, the temperature control mechanism 36 may also be used to cool the third chemical liquid nozzle 31. The third chemical liquid nozzle 31 is cooled to about normal temperature, for example. As a result, when the standby state of the third chemical liquid nozzle 31 is released and the third chemical liquid nozzle 31 starts the caronic acid supply process shown in FIG. 5, the caronic acid supply process can be started smoothly.

(3) A modified example 300 of the generating device 30 will be described with reference to FIG. 8. FIG. 8 is a diagram showing a modification 300 of the generating device 30.

As shown in FIG. 3, in this embodiment, the first outer passage 311f communicates with the second outer passage 312f via the first communication passage 313f. However, the present invention is not limited to this. As shown in FIG. 8, the first outer passage 311f may also be independent of the second outer passage 312f and not communicate with the second outer passage 312f. That is, the first communication path 313f may not be provided. In this case, the first outer passage 311f communicates with the first supply port 31b. The second outer passage 312f may also communicate with a fourth supply port 312b that is different from the first supply port 31b. In addition, gas is supplied to the first supply port 31b and the fourth supply port 312b, respectively.

As shown in FIG. 3, the first inner passage 311g communicates with the second inner passage 312g via the second communication passage 313g. However, the present invention is not limited to this. As shown in FIG. 8, the first inner passage 311g may be independent of the second inner passage 312g and not communicate with the second inner passage 312g. That is, the second communication path 313g may not be provided. In this case, the first inner passage 311g communicates with the second supply port 31c. The second inner passage 312g communicates with a fifth supply port 312c that is different from the second supply port 31c. Then, sulfuric acid is supplied to the second supply port 31c and the fifth supply port 312c, respectively.

By using the modified example 300 of the generating device 30, the same effect as the case of using the generating device 30 of this embodiment can also be achieved.

(4) In the present embodiment, the generating device 30 generates caloric acid. However, the present invention is not limited to this. It is also possible to generate SC1 by the generating device 30.

Hereinafter, a first example of the device configuration of the generating device 30 for generating SC1 will be described with reference to FIG. 9. FIG. 9 is a diagram showing a first example of the device configuration of the generating device 30 for generating SC1.

As shown in FIG. 9, when SC1 is generated by the generating device 30, sulfuric acid is not supplied to the second supply port 31c, but ammonia water is supplied to the second supply port 31c. To the first supply port 31b and the third supply port 31d, for example, the same gas as that of the present embodiment is supplied. Then, when the ammonia water droplets α1 pass through the plasma generation region E, plasma is supplied to the water contained in the ammonia water, thereby generating hydrogen peroxide water. As a result, SC1 is produced, and SC1 is a mixed liquid of ammonia water, hydrogen peroxide water, and water.

The droplet β1 of SC1 generated in the generation area E is released from the tube portion 312. As a result, SC1 can be generated without preparing hydrogen peroxide water.

SC1 is the second example of the treatment fluid of the present invention. Ammonia is the second example of the treatment liquid of the present invention.

(5) A second example of the device configuration of the generating device 30 for generating SC1 will be described with reference to FIG. 10. FIG. 10 is a diagram showing a second example of the device configuration of the generating device 30 for generating SC1.

The difference from the first example is that the second example uses a modification 300 of the generating device 30 shown in FIG. 8.

As shown in FIG. 10, nitrogen is supplied to the first supply port 31b, ammonia is supplied to the second supply port 31c, water is supplied to the fifth supply port 312c, and argon is supplied to the fourth supply port 312b. The third supply port 31d is supplied with the same gas or air as in the present embodiment. As a result, water and plasma generate hydrogen peroxide water, thereby generating SC1. In addition, by confluence of nitrogen and ammonia in the communication portion G, decomposition of ammonia components can be suppressed. In addition, hydrogen peroxide can be efficiently generated by using argon.

(6) The discharge part 400 which is a modification of the discharge part 311 will be described with reference to FIG. 11. FIG. 11 is a schematic diagram showing the discharge part 400 which is a modification of the discharge part 311.

As shown in FIG. 11, the discharge part 400 has a main body 401, a sixth supply port 402, a seventh supply port 403, a discharge port 404, a fourth passage 405, and a fifth passage 406.

The body part 401 is used to form a structure of the discharge part 400.

The sixth supply port 402, the seventh supply port 403, and the discharge port 404 are openings formed on the outer surface of the main body 401. The fourth passage 405 and the fifth passage 406 are formed in the hollow part of the main body 401.

The sixth supply port 402 is connected to the supply pipe 500. The supply pipe 500 is connected to a supply source of gas. The gas supply source is to supply gas to the sixth supply port 402 via the supply pipe 500. The gas system supplied from the gas supply source is the same gas as the gas of this embodiment.

The seventh supply port 403 communicates with a supply source of sulfuric acid and is supplied with sulfuric acid.

The discharge port 404 has a first discharge port 404a and a second discharge port 404b. The second discharge port 404b is formed in a ring shape so as to surround the first discharge port 404a.

A pipe portion 312 is connected to the discharge port 404. As in the present embodiment, a generating part 35 and a temperature control mechanism 36 are provided in the pipe part 312 (refer to FIG. 3).

The fourth passage 405 is formed annularly with the fifth passage 406 as the center. The fourth passage 405 communicates with the sixth supply port 402 and communicates with the second discharge port 404b. As a result, the second discharge port 404b communicates with the sixth supply port 402 via the fourth passage 405.

The fifth passage 406 is connected to the seventh supply port 403 and to the first discharge port 404a. As a result, the first discharge port 404a communicates with the seventh supply port 403 via the fifth passage 406.

The operation of the discharge unit 400 will be described.

The gas system supplied from the sixth supply port 402 passes through the fourth passage 405, flows in the fourth passage 405, and is discharged from the second discharge port 404b. The sulfuric acid supplied from the seventh supply port 403 passes through the fifth passage 406, flows through the fifth passage 406, and is discharged from the first discharge port 404a. The gas discharged from the second discharge port 404b and the sulfuric acid discharged from the first discharge port 404a collide with each other, thereby generating droplets of sulfuric acid. The droplets of sulfuric acid flow on the pipe 312. Furthermore, the droplet α of sulfuric acid passes through the generation area E existing on the movement path R when the pipe portion 312 flows, thereby generating caronic acid (see FIG. 7). In this embodiment, since the droplet α of sulfuric acid passes through the generation area E, the droplet β of caronic acid is generated. As a result, the droplets β of caroic acid are released from the tube portion 312.

In addition, the fourth passage 405 is formed annularly with the fifth passage 406 as the center. However, like the first outer passage 311f and the second outer passage 312f shown in FIG. 8, the fourth passage 405 may also be composed of a plurality of independent passages. In addition, like the first outer passage 311f and the second outer passage 312f shown in FIG. 7, the fourth passage 405 may also have a structure in which a plurality of independent passages communicate with each other.

In addition, the discharge unit 400 may also be used to generate SC1. In this case, the seventh supply port 403 is supplied with ammonia water and the sixth supply port 402 is supplied with gas.

(7) As shown in FIG. 7, in this embodiment, droplets α of sulfuric acid are discharged from the discharge portion 311. However, the present invention is not limited to this. The liquid sulfuric acid in the state of not being separated into droplets α may be discharged from the discharge part 311. That is, the liquid containing sulfuric acid may be continuously discharged from the discharge portion 311. As a result, since there is no need for a structure for mixing (contacting) the gas and sulfuric acid at the communication portion G, the device structure of the generating device 30 can be simplified.

(8) As shown in FIG. 7, in this embodiment, the generation area E is located inside the pipe portion 312. However, the present invention is not limited to this. The generation area E only needs to be located on the movement path R of the sulfuric acid, and may be located at a place other than the inside of the pipe portion 312. For example, the generation area E may be located outside the tube portion 312 (outside the third chemical liquid nozzle 31). In this case, the third chemical liquid nozzle 31 may not have the tube portion 312. As a result, the device configuration of the generating device 30 can be simplified.

(9) The substrate processing apparatus 100 is a blade type apparatus for processing substrates W piece by piece. However, the present invention is not limited to this. The substrate processing apparatus 100 may also be a batch type apparatus for processing a plurality of substrates W at the same time.

[Industry Availability] The present invention can be used in the fields of generating devices, substrate processing devices, and substrate processing methods.

1: processing unit 2: Memory Department 3: Control Department 6: Chamber 7: FFU 8: Next door 9: Block the door 10: Rotation fixture 11: Fixture pin 12: Rotation base 13: Rotation motor 14: Hood 14a: Inclined part 14b: Guiding Department 14c: Liquid receiving part 15: Hood lifting unit 16: Cleaning fluid nozzle 17: Cleaning fluid piping 18: Cleaning fluid valve 21: The first liquid spray nozzle 22: The first chemical solution piping 23: The first liquid valve 24: The second liquid spray nozzle 25: The second chemical solution piping 26: The second liquid valve 30: Generating device 31: The third liquid spray nozzle 31a, 401: body part 31b: First supply port 31c: second supply port 31d: third supply port 31e, 404: Outlet 31f: first path 31g: second channel 31h: third channel 31m: Inlet 31n: spout 31p: internal 31q: Base end 31r: Front end 32: Nozzle moving unit 33: Liquid medicine supply department 33a: Third chemical liquid piping 33b: The third liquid valve 34: Gas supply department 34a: First gas piping 34b: Second gas piping 34c: First gas valve 34d: second gas valve 35: Production Department 36: Temperature control mechanism 100: Substrate processing device 300: Variation example of generating device 311,400: discharge part 311f: First outer passage 311g: first inner passage 312: Pipe Department 312b: The fourth supply port 312c: Fifth supply port 312f: second outer passage 312g: second inner passage 313f: the first connecting path 313g: second communication path 351: Coil 352: Power Supply Department 361: Wall 362: Cooling passage part 363: Cooling Piping 364: Cooling Valve 402: Sixth Supply Port 403: Seventh Supply Port 404a: First discharge outlet 404b: second outlet 405: Fourth Path 406: Fifth Channel 500: supply pipe A1: Rotation axis A2: swing axis C: Carrier CR: Central Robot E: Production area G: Connecting part IR: Index Robot K1, K2, K3: gas LP: load port R: moving path U: Tower W: substrate Wa: main surface α, α1, β, β1: droplets

Fig. 1 is a plan view schematically showing the structure of a substrate processing apparatus according to an embodiment of the present invention. [Fig. 2] A side view schematically showing the configuration of the processing unit. [Fig. 3] A diagram schematically showing the structure of the generating device. [FIG. 4] A flowchart showing an example of substrate processing performed by the substrate processing apparatus. [Figure 5] is a flow chart showing the process of supplying caloric acid. [Fig. 6] is the first diagram showing the operation of the generating device. [Fig. 7] is the second diagram showing the operation of the generating device. [Fig. 8] A diagram showing a modification example of the generating device. [Figure 9] is a diagram showing the first example of the device configuration of the device for generating SC1 (Standard clean-1; the first standard cleaning solution, that is, ammonia-hydrogen peroxide). [FIG. 10] A diagram showing a second example of the device configuration of the generating device for generating SC1. [Fig. 11] is a schematic diagram showing a discharge part which is a modification of the discharge part.

30: Generating device

31: The third liquid spray nozzle

31b: First supply port

31c: second supply port

31d: third supply port

31e: discharge outlet

31f: first path

31g: second channel

31h: third channel

31m: Inlet

31n: spout

31p: internal

35: Production Department

36: Temperature control mechanism

311: Discharge

311f: First outer passage

311g: first inner passage

312: Pipe Department

312f: second outer passage

312g: second inner passage

313f: the first connecting path

313g: second communication path

351: Coil

352: Power Supply Department

362: Cooling passage part

363: Cooling Piping

364: Cooling Valve

E: Production area

G: Connecting part

K1, K2: gas

R: moving path

α, β: droplets

Claims (11)

A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the treatment liquid discharged from the discharge part; the treatment flow system contains caronic acid; and the treatment liquid system contains sulfuric acid. A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the treatment liquid discharged from the discharge part; the discharge part mixes the treatment liquid and the gas, thereby generating droplets of the treatment liquid. The production device according to claim 2, wherein the discharge part has: a first supply port, which is supplied with the gas; a second supply port, which is supplied with the treatment liquid; and a third supply port, which is supplied with There is the aforementioned gas; the discharge port is connected to the third supply port; the first passage is connected to the first supply port and communicates with the discharge port; and the second passage is connected to the second supply port and communicates In the aforementioned first path. The generating device according to claim 2, wherein the discharge part has: a first supply port which is supplied with the gas; a second supply port which is supplied with the treatment liquid; and a first discharge port which is connected to The second supply port; and the second discharge port are formed to surround the first discharge port and communicate with the first supply port. The generating device according to claim 2, wherein the gas system includes at least one of oxygen, nitrogen, argon, and helium. A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the processing liquid discharged from the discharge part; the generation device further includes a tube part protruding from the discharge part; and the plasma generation area is located inside the tube part. A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the treatment liquid discharged from the discharge part; the plasma is an inductively coupled plasma. A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the treatment liquid discharged from the discharge part; the generation part generates oxygen plasma under normal pressure. A generating device is used to generate a processing fluid for substrate processing from a processing liquid, and is provided with: a discharge part which discharges the aforementioned treatment liquid; and a generation part which generates plasma; the aforementioned plasma generation region is It is located on the moving path of the processing liquid discharged from the discharge part; the generating device is further provided with a temperature control mechanism for controlling the temperature of the plasma generating area. A substrate processing apparatus is provided with the generating device described in any one of claims 1 to 9; the substrate processing apparatus supplies the processing fluid generated by the generating device to the substrate. A substrate processing method is used to process a substrate with a resist film on the surface, and has the following steps: mixing gas and sulfuric acid to generate droplets of the aforementioned sulfuric acid; making the aforementioned sulfuric acid liquid in the plasma generation area The drop moves, thereby generating caronic acid; and supplying the aforementioned caronic acid to the substrate.

Images