TWI727105B - Components for semiconductor manufacturing equipment and manufacturing method thereof - Google Patents

Components for semiconductor manufacturing equipment and manufacturing method thereof Download PDF

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Publication number
TWI727105B
TWI727105B TW106134515A TW106134515A TWI727105B TW I727105 B TWI727105 B TW I727105B TW 106134515 A TW106134515 A TW 106134515A TW 106134515 A TW106134515 A TW 106134515A TW I727105 B TWI727105 B TW I727105B
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TW
Taiwan
Prior art keywords
electrostatic chuck
support substrate
concave surface
semiconductor manufacturing
metal bonding
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Application number
TW106134515A
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Chinese (zh)
Other versions
TW201830513A (en
Inventor
竹林央史
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日商日本碍子股份有限公司
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Publication of TW201830513A publication Critical patent/TW201830513A/en
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Publication of TWI727105B publication Critical patent/TWI727105B/en

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    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
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Abstract

半導體製造裝置用元件10之製法係包含：(a)準備：具有晶圓載置面22之陶瓷製且平板狀的靜電吸盤20；具有凹面32，由與陶瓷的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的複合材料所成之支持基板30；及平板狀的金屬接合材401的工序；及(b)在支持基板30的凹面32與靜電吸盤20之與晶圓載置面22為相反側的面23之間夾著金屬接合材401，以金屬接合材401的固相線溫度以下的溫度，將支持基板30與靜電吸盤20進行熱壓接合，藉此使靜電吸盤20變形為與凹面32為相同形狀的工序。 The manufacturing method of the component 10 for a semiconductor manufacturing device includes: (a) Preparation: a ceramic and flat electrostatic chuck 20 with a wafer mounting surface 22; a concave surface 32 that differs from the ceramic’s linear thermal expansion coefficient at 40 to 570°C The support substrate 30 made of a composite material with an absolute value of 0.2×10 -6 /K or less; and the process of the flat metal bonding material 401; and (b) the sum of the concave surface 32 of the support substrate 30 and the electrostatic chuck 20 The wafer mounting surface 22 is the opposite side of the surface 23 sandwiched between the metal bonding material 401, at a temperature below the solidus temperature of the metal bonding material 401, the support substrate 30 and the electrostatic chuck 20 are thermocompression-bonded, thereby making The process of deforming the electrostatic chuck 20 into the same shape as the concave surface 32.

Description

半導體製造裝置用元件及其製法 Components for semiconductor manufacturing equipment and manufacturing method thereof

本發明係關於半導體製造裝置用元件及其製法。 The present invention relates to an element for a semiconductor manufacturing device and its manufacturing method.

以半導體製造裝置用元件而言，已知一種包括：具有晶圓載置面且埋設有靜電電極的靜電吸盤；及被接合在該靜電吸盤之與晶圓載置面為相反側的面的支持基板者。在專利文獻1中，以半導體製造裝置用元件而言，已揭示支持基板之中與靜電吸盤相接合的面為凹面，以凹面的中央部的深度成為凹面的直徑的6.66×10-5~8.33×10-5倍的方式所形成者。說明藉由該半導體製造裝置用元件，藉由將支持基板之中與靜電吸盤相接合的面形成為凹面，可安定地保持晶圓。在專利文獻1中，靜電吸盤係由陶瓷元件所構成，支持基板係由鋁元件或不銹鋼元件等所構成。在此，若將線熱膨脹係數相比較，作為陶瓷代表例的氧化鋁為7~8×10-6/K，鋁為約23×10-6/K，作為不銹鋼代表例的SUS304為約16×10-6/K。此外，當將靜電吸盤與支持基板的凹面相接著時，使兩者的間隙浸潤接著劑而相接著。 For semiconductor manufacturing device components, there is a known one that includes: an electrostatic chuck having a wafer mounting surface and embedded with electrostatic electrodes; and a support substrate bonded to the surface of the electrostatic chuck on the opposite side to the wafer mounting surface . In Patent Document 1, it has been disclosed that the surface of the support substrate that is joined to the electrostatic chuck is a concave surface, and the depth of the center portion of the concave surface is 6.66×10 -5 ~ 8.33 of the diameter of the concave surface, in terms of components for semiconductor manufacturing equipment. ×10 -5 times the way formed. It will be explained that with this semiconductor manufacturing device component, the surface of the support substrate that is joined to the electrostatic chuck is formed as a concave surface, so that the wafer can be held stably. In Patent Document 1, the electrostatic chuck is composed of ceramic elements, and the supporting substrate is composed of aluminum elements, stainless steel elements, or the like. Here, if the linear thermal expansion coefficient is compared, alumina as a representative example of ceramics is 7-8×10 -6 /K, aluminum is about 23×10 -6 /K, and SUS304 as a representative example of stainless steel is about 16× 10 -6 /K. In addition, when the electrostatic chuck and the concave surface of the support substrate are adhered, the gap between the two is soaked with the adhesive and adhered.

【先前技術文獻】 【Prior Technical Literature】 【專利文獻】 【Patent Literature】

日本專利第5628507號公報 Japanese Patent No. 5628507

但是，在專利文獻1中，由於靜電吸盤與支持基板的線熱膨脹係數差大，因此在將兩者加熱而相接著的工序中，有因該線熱膨脹係數差而變形的情形。因此，難以使靜電吸盤精度佳地反映支持基板的凹面形狀。此外，使靜電吸盤與支持基板的凹面的間隙浸潤有接著劑(亦即將接著劑形成為液狀而使其滲入)，因此在接著後的接著層的厚度容易產生不均，在這方面亦難以使靜電吸盤精度佳地反映支持基板的凹面形狀。 However, in Patent Document 1, since the difference in linear thermal expansion coefficient between the electrostatic chuck and the supporting substrate is large, in the step of heating the two to connect them, the difference in linear thermal expansion coefficient may be deformed in some cases. Therefore, it is difficult for the electrostatic chuck to accurately reflect the concave shape of the support substrate. In addition, the gap between the electrostatic chuck and the concave surface of the support substrate is impregnated with an adhesive (that is, the adhesive is formed into a liquid state to infiltrate it), so uneven thickness of the adhesive layer after bonding is likely to occur, which is also difficult. The electrostatic chuck accurately reflects the concave shape of the support substrate.

本發明係為解決如上所示之課題而完成者，主要目的在提供支持基板的凹面形狀精度佳地反映在靜電吸盤的半導體製造裝置用元件。 The present invention has been accomplished to solve the above-mentioned problems, and its main purpose is to provide a semiconductor manufacturing device component in which the concave shape of a support substrate is accurately reflected in an electrostatic chuck.

本發明之半導體製造裝置用元件之製法係包含：(a)準備：具有晶圓載置面之陶瓷製且平板狀的靜電吸盤；具有與周緣相比為中央凹陷的形狀的凹面，由與前述陶瓷的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的複合材料所成之支持基板；及平板狀的金屬接合材的工序；及(b)在前述支持基板的前述凹面與前述靜電吸盤之與前述晶圓載置面為相反側的面之間夾著前述金屬接合材，以前述金屬接合材的固相線溫度以下的溫度，將前述支持基板與前述靜電吸盤進行熱壓接合，藉此使前述靜電吸盤變形為與前述凹面為相同形狀的工序。 The manufacturing method of the device for semiconductor manufacturing equipment of the present invention includes: (a) Preparation: a ceramic and flat plate-shaped electrostatic chuck with a wafer placement surface; The absolute value of the difference in the coefficient of linear thermal expansion between 40 and 570°C is 0.2×10 -6 /K or less for the supporting substrate made of the composite material; and the process of flat metal bonding material; and (b) in the aforementioned supporting substrate The metal bonding material is sandwiched between the concave surface and the surface of the electrostatic chuck on the opposite side to the wafer mounting surface, and the supporting substrate and the electrostatic chuck are performed at a temperature below the solidus temperature of the metal bonding material. The process of thermocompression bonding, whereby the electrostatic chuck is deformed into the same shape as the concave surface.

在該製法中，構成靜電吸盤的陶瓷與構成支持基板的複合材料的40~570℃的腺熱膨脹係數差的絕對值為0.2× 10-6/K以下，因此當將兩者加熱而相接合時，不會有或幾乎不會有因該線熱膨脹係數差而變形的情形。此外，在支持基板的凹面與靜電吸盤之與晶圓載置面為相反側的面之間夾著金屬接合材，以該金屬接合材的固相線溫度以下的溫度將兩者進行熱壓接合，因此在金屬接合層的厚度不易產生不均。由此，可使靜電吸盤精度佳地反映支持基板的凹面形狀。 In this manufacturing method, the absolute value of the difference in the thermal expansion coefficient of the glands at 40 to 570°C between the ceramic constituting the electrostatic chuck and the composite material constituting the support substrate is 0.2×10 -6 /K or less, so when the two are heated and joined , There will be no or almost no deformation due to the difference in thermal expansion coefficient of the wire. In addition, a metal bonding material is sandwiched between the concave surface of the support substrate and the surface of the electrostatic chuck on the opposite side to the wafer placement surface, and the two are thermocompression bonded at a temperature below the solidus temperature of the metal bonding material. Therefore, unevenness is unlikely to occur in the thickness of the metal bonding layer. As a result, the electrostatic chuck can accurately reflect the concave shape of the support substrate.

其中，如此之熱壓接合亦有時被稱為Thermal Compression Bonding(熱壓接合)(TCB)。 Among them, such thermal compression bonding is sometimes called Thermal Compression Bonding (TCB).

在本發明之半導體製造裝置用元件之製法中，較佳為前述凹面係凹陷為球面狀的面。如此一來，凹面的曲率係任何之處均相同，因此在接合時可等分布加重，容易使因金屬接合材所致之接合強度均一。 In the method for manufacturing a device for a semiconductor manufacturing device of the present invention, it is preferable that the concave surface is a spherical surface. In this way, the curvature of the concave surface is the same everywhere, so the uniform distribution can be increased during joining, and the joining strength due to the metal joining material can be made uniform.

在本發明之半導體製造裝置用元件之製法中，前述凹面係最為凹陷之處的深度以1~100μm為佳，以40~60μm為較佳。如上所示即使在最為凹陷之處的深度為相對較深的情形下，藉由本發明之製法，亦可以充分的接合強度，將靜電吸盤與支持基板相接合。 In the method for manufacturing a device for a semiconductor manufacturing device of the present invention, the depth of the most depressed portion of the concave surface is preferably 1-100 μm, and more preferably 40-60 μm. As shown above, even when the depth of the most recessed part is relatively deep, the method of the present invention can bond the electrostatic chuck to the support substrate with sufficient bonding strength.

在本發明之半導體製造裝置用元件之製法中，較佳為前述陶瓷為氧化鋁，前述複合材料係含有碳化矽37~60質量%，並且分別含有矽化鈦、碳化矽鈦及碳化鈦比前述碳化矽的質量%更為少量的材料，前述金屬接合材係由Al-Si-Mg系或Al-Mg系材料所構成。如上所示之複合材料係與氧化鋁的線熱膨脹係數差極小，因此適於作為支持基板的材料。此外，以Al-Si-Mg系或Al-Mg系材料所構成的金屬接合材係適於進 行熱壓接合。Al-Si-Mg系或Al-Mg系材料係以Al為主成分的材料，以Al-Si-Mg系材料之一例而言，列舉Si為9~12質量%、Mg為1~2質量%、剩餘為Al的材料。 In the method for manufacturing a semiconductor manufacturing device component of the present invention, it is preferable that the ceramic is alumina, the composite material contains 37-60% by mass of silicon carbide, and each contains titanium silicide, titanium silicon carbide, and titanium carbide more than the aforementioned carbide. A material with a smaller amount of silicon by mass%, and the aforementioned metal bonding material is composed of an Al-Si-Mg-based or Al-Mg-based material. The composite material shown above has an extremely small difference in linear thermal expansion coefficient with alumina, and therefore is suitable as a material for a supporting substrate. In addition, metal bonding materials composed of Al-Si-Mg-based materials or Al-Mg-based materials are suitable for thermocompression bonding. Al-Si-Mg-based or Al-Mg-based materials are materials with Al as the main component. As an example of Al-Si-Mg-based materials, Si is 9-12% by mass and Mg is 1-2% by mass , The remaining material is Al.

在本發明之半導體製造裝置用元件之製法中，較佳為前述靜電吸盤係厚度為2mm以上5mm以下，前述支持基板係厚度為7mm以上15mm以下。靜電吸盤被接合在支持基板的凹面時，在靜電吸盤雖然作用欲恢復成平板狀的力，但是若將靜電吸盤及支持基板的厚度設計成位於上述數值範圍內，即使作用如此之力，亦可在使靜電吸盤變形為與凹面為相同形狀的狀態下容易接合在支持基板。 In the method for manufacturing a component for a semiconductor manufacturing device of the present invention, it is preferable that the thickness of the electrostatic chuck is 2 mm or more and 5 mm or less, and the thickness of the support substrate is 7 mm or more and 15 mm or less. When the electrostatic chuck is bonded to the concave surface of the support substrate, although the electrostatic chuck exerts a force to return to a flat plate shape, if the thickness of the electrostatic chuck and the support substrate is designed to be within the above numerical range, even if such a force is applied The electrostatic chuck is easily bonded to the supporting substrate in a state where the electrostatic chuck is deformed into the same shape as the concave surface.

本發明之半導體製造裝置用元件係包括：具有晶圓載置面的陶瓷製的靜電吸盤；具有與周緣相比為中央凹陷的形狀的凹面，由與前述陶瓷的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的複合材料所成之支持基板；及在前述靜電吸盤變形為與前述凹面為相同形狀的狀態下，將前述靜電吸盤之與前述晶圓載置面為相反側的面、與前述支持基板的前述凹面相接合的金屬接合層。 The device for semiconductor manufacturing equipment of the present invention includes: a ceramic electrostatic chuck with a wafer placement surface; a concave surface with a central recessed shape compared to the peripheral edge, which is different from the aforementioned ceramic’s linear thermal expansion coefficient of 40 to 570°C. A support substrate made of a composite material with an absolute value of 0.2×10 -6 /K or less; and when the electrostatic chuck is deformed into the same shape as the concave surface, the electrostatic chuck and the wafer mounting surface are The surface on the opposite side is a metal bonding layer that is bonded to the concave surface of the support substrate.

在該半導體製造裝置用元件中，構成靜電吸盤的陶瓷與構成支持基板的複合材料的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下、及支持基板的凹面與靜電吸盤係以金屬接合層予以接合，因此靜電吸盤係精度佳地反映支持基板的凹面形狀。此外，由於靜電吸盤的晶圓載置面形成為凹面，因此與晶圓載置面為凸面的情形相比，可在晶圓載置面 安定地保持晶圓。 In this semiconductor manufacturing device component, the absolute value of the difference in linear thermal expansion coefficient between 40 to 570°C between the ceramic constituting the electrostatic chuck and the composite material constituting the support substrate is 0.2×10 -6 /K or less, and the concave surface of the support substrate The electrostatic chuck is bonded by a metal bonding layer, so the electrostatic chuck accurately reflects the concave shape of the support substrate. In addition, since the wafer mounting surface of the electrostatic chuck is formed as a concave surface, it is possible to stably hold the wafer on the wafer mounting surface compared to a case where the wafer mounting surface is a convex surface.

在本發明之半導體製造裝置用元件中，較佳為前述凹面係凹陷為球面狀的面。此外，較佳為前述凹面係最為凹陷之處的深度為40~60μm。此外，較佳為前述陶瓷為氧化鋁，前述複合材料係含有碳化矽37~60質量%，並且分別含有矽化鈦、碳化矽鈦及碳化鈦比前述碳化矽的質量%更為少量的材料，前述金屬接合材係由Al-Si-Mg系或Al-Mg系材料所構成。再此外，前述靜電吸盤較佳為厚度為2mm以上5mm以下，前述支持基板較佳為厚度為7mm以上15mm以下。 In the element for a semiconductor manufacturing apparatus of the present invention, it is preferable that the concave surface is a surface in which the concave surface is recessed into a spherical surface. In addition, it is preferable that the depth of the most depressed portion of the concave surface is 40-60 μm. In addition, it is preferable that the ceramic is alumina, the composite material contains 37-60% by mass of silicon carbide, and each contains titanium silicide, titanium silicon carbide, and titanium carbide in a smaller amount than the mass% of the aforementioned silicon carbide. The metal bonding material is composed of Al-Si-Mg-based or Al-Mg-based materials. Furthermore, the aforementioned electrostatic chuck preferably has a thickness of 2 mm or more and 5 mm or less, and the aforementioned supporting substrate preferably has a thickness of 7 mm or more and 15 mm or less.

10‧‧‧半導體製造裝置用元件 10‧‧‧Components for semiconductor manufacturing equipment

20‧‧‧靜電吸盤 20‧‧‧Electrostatic chuck

22‧‧‧晶圓載置面 22‧‧‧Wafer mounting surface

22a‧‧‧密封帶 22a‧‧‧Sealing tape

22b‧‧‧浮凸 22b‧‧‧Embossed

23‧‧‧晶圓載置面22相反側的面 23‧‧‧The surface opposite to the wafer placement surface 22

24‧‧‧靜電電極 24‧‧‧Electrostatic electrode

26‧‧‧加熱器電極 26‧‧‧Heater electrode

28‧‧‧介電質層 28‧‧‧Dielectric layer

30‧‧‧支持基板 30‧‧‧Support substrate

32‧‧‧凹面 32‧‧‧Concave

40‧‧‧金屬接合層 40‧‧‧Metal bonding layer

50‧‧‧浮凸圖案遮罩 50‧‧‧Embossed pattern mask

52‧‧‧保養遮罩 52‧‧‧Maintenance mask

201‧‧‧第1生坯片材 201‧‧‧The first green sheet

202‧‧‧第2生坯片材 202‧‧‧Second Green Sheet

203‧‧‧第3生坯片材 203‧‧‧The third green sheet

204‧‧‧陶瓷燒結體 204‧‧‧ceramic sintered body

220‧‧‧積層體 220‧‧‧Layered body

301‧‧‧圓盤元件 301‧‧‧Disc components

401‧‧‧金屬接合材 401‧‧‧Metal bonding material

第1圖係半導體製造裝置用元件10的剖面圖。 Fig. 1 is a cross-sectional view of an element 10 for a semiconductor manufacturing apparatus.

第2圖係晶圓載置面22的平面圖。 FIG. 2 is a plan view of the wafer mounting surface 22.

第3圖係靜電吸盤20的製造工序圖。 FIG. 3 is a manufacturing process diagram of the electrostatic chuck 20.

第4圖係支持基板30的製造工序圖。 FIG. 4 is a manufacturing process diagram of the support substrate 30. As shown in FIG.

第5圖係半導體製造裝置用元件10的製造工序圖。 FIG. 5 is a manufacturing process diagram of the element 10 for a semiconductor manufacturing apparatus.

以下說明本實施形態之半導體製造裝置用元件10。第1圖係半導體製造裝置用元件10的剖面圖(以通過元件10的中心的垂直面進行切斷時的剖面圖)，第2圖係晶圓載置面22的平面圖。 Hereinafter, the element 10 for a semiconductor manufacturing apparatus of this embodiment will be described. FIG. 1 is a cross-sectional view of the element 10 for a semiconductor manufacturing apparatus (a cross-sectional view when a vertical plane passing through the center of the element 10 is cut), and FIG. 2 is a plan view of the wafer mounting surface 22.

半導體製造裝置用元件10係包括：靜電吸盤20、支持基板30、及金屬接合層40。 The component 10 for a semiconductor manufacturing device includes an electrostatic chuck 20, a supporting substrate 30, and a metal bonding layer 40.

靜電吸盤20係比施行電漿處理的矽製晶圓為外徑 較小之圓盤狀且為氧化鋁製的板材，內置有靜電電極24與加熱器電極26。靜電吸盤20的直徑並非為特別限定者，亦可形成為例如250~350mm。靜電吸盤20的厚度並非為特別限定者，以2mm以上5mm以下為佳。靜電吸盤20的上面係形成為晶圓載置面22。在晶圓載置面22係如第2圖所示，沿著外緣形成有密封帶22a，全面形成有複數浮凸22b。密封帶22a及浮凸22b的高度為數μm~數10μm。靜電電極24係透過未圖示之供電端子，藉由外部電源可施加直流電壓的面電極。氧化鋁製板材之中之晶圓載置面22與靜電電極24之間的部分作為介電質層28來發揮功能。若直流電壓被施加至該靜電電極24，被載置在晶圓載置面22的晶圓係藉由庫侖力而被吸附固定在晶圓載置面22，若解除直流電壓的施加，晶圓對晶圓載置面22的吸附固定即被解除。加熱器電極26係以遍及靜電吸盤20的全面予以配線的方式，例如以一筆劃的要領形成圖案，若施加電壓，即發熱而將晶圓加熱。靜電電極24及加熱器電極26均與晶圓載置面22平行而設。其中，「平行」係指除了完全平行的情形之外，即使非為完全平行，若在公差範圍內，即視為平行(以下同)。 The electrostatic chuck 20 is a disk-shaped plate made of alumina with a smaller outer diameter than the silicon wafer subjected to plasma processing, and has an electrostatic electrode 24 and a heater electrode 26 built in. The diameter of the electrostatic chuck 20 is not particularly limited, and it may be formed to be 250 to 350 mm, for example. The thickness of the electrostatic chuck 20 is not particularly limited, but is preferably 2 mm or more and 5 mm or less. The upper surface of the electrostatic chuck 20 is formed as a wafer mounting surface 22. As shown in FIG. 2, on the wafer mounting surface 22, a sealing tape 22 a is formed along the outer edge, and a plurality of embossments 22 b are formed on the entire surface. The height of the sealing tape 22a and the relief 22b is several micrometers-several tens micrometers. The electrostatic electrode 24 is a surface electrode to which a DC voltage can be applied by an external power supply through a power supply terminal not shown in the figure. The portion between the wafer mounting surface 22 and the electrostatic electrode 24 in the aluminum oxide plate material functions as the dielectric layer 28. If a DC voltage is applied to the electrostatic electrode 24, the wafer placed on the wafer placement surface 22 is attracted and fixed to the wafer placement surface 22 by the Coulomb force. If the application of the DC voltage is released, the wafer to the wafer The suction and fixation of the circular placement surface 22 is released. The heater electrode 26 is wired over the entire surface of the electrostatic chuck 20, and is patterned, for example, in a stroke. If a voltage is applied, it generates heat and heats the wafer. Both the electrostatic electrode 24 and the heater electrode 26 are provided in parallel with the wafer mounting surface 22. Among them, "parallel" means that, except in the case of completely parallel, even if it is not completely parallel, if it is within the tolerance range, it is regarded as parallel (the same below).

支持基板30係在外周包括段差的圓盤狀且為複合材料製的板材。支持基板30的上面係外徑與靜電吸盤20為同等或稍大的圓形，形成為與周緣相比為中央凹陷的形狀的凹面32。複合材料係含有Si、C及Ti，與氧化鋁的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的材料。複合材料係以含有碳化矽粒子37~60質量%，並且分別含有矽化鈦、碳 化矽鈦及碳化鈦比碳化矽的質量%更為少量為佳。含有量係可取得複合材料的X線繞射圖案，藉由使用資料解析用軟體的簡易定量來求出。以矽化鈦而言，係列舉TiSi2、TiSi、Ti5Si4、Ti5Si3等，其中以TiSi2為佳。以碳化矽鈦而言，以Ti3SiC2(TSC)為佳，以碳化鈦而言，以TiC為佳。碳化鈦的質量%係以小於矽化鈦的質量%及碳化矽鈦的質量%為佳。矽化鈦的質量%係以大於碳化矽鈦的質量%為佳。亦即，質量%係以碳化矽為最大，依矽化鈦、碳化矽鈦、碳化鈦的順序變小為佳。例如，亦可將碳化矽設為37~60質量%、矽化鈦設為31~41質量%、碳化矽鈦設為5~25質量%、碳化鈦設為1~4質量%。此外，複合材料的開孔率係以1%以下為佳。開孔率係可藉由以純水為媒體的阿基米德法來測定。關於如此之複合材料的詳細內容，記載於日本專利第5666748號公報。以凹面32而言，列舉例如凹陷為研缽狀的面或凹陷為球面狀的面，惟以凹陷為球面狀的面為佳。此外，凹面32之中最為凹陷之處的深度以1~100μm為佳，以40~60μm為較佳。支持基板30的厚度並未特別限定，以例如7mm以上15mm以下為佳。其中，在支持基板30之中與凹面32為相反側之面亦可接合有未圖示之冷卻基材。冷卻基材亦可由例如鋁或鋁合金等所構成，在內部具有冷媒通路。 The support substrate 30 is a plate-shaped plate made of a composite material having a stepped disc shape on the outer periphery. The upper surface of the support substrate 30 has a circular shape with an outer diameter equal to or slightly larger than that of the electrostatic chuck 20, and is formed as a concave surface 32 having a shape recessed in the center compared to the periphery. The composite material contains Si, C, and Ti, and the absolute value of the difference between the coefficient of linear thermal expansion of 40 to 570°C and that of alumina is 0.2×10 -6 /K or less. The composite material preferably contains 37-60% by mass of silicon carbide particles, and each contains titanium silicide, titanium silicon carbide, and titanium carbide in a smaller amount than the mass% of silicon carbide. The content can be obtained by obtaining the X-ray diffraction pattern of the composite material, and can be determined by simple quantitative analysis using software for data analysis. In terms of titanium silicide, the series include TiSi 2 , TiSi, Ti 5 Si 4 , Ti 5 Si 3, etc. Among them, TiSi 2 is preferred. For silicon carbide titanium, Ti 3 SiC 2 (TSC) is preferred, and for titanium carbide, TiC is preferred. The mass% of titanium carbide is preferably less than the mass% of titanium silicide and the mass% of titanium silicon carbide. The mass% of titanium silicide is preferably greater than the mass% of titanium silicon carbide. That is, the mass% is the largest with silicon carbide, and it is better to decrease in the order of titanium silicide, titanium silicon carbide, and titanium carbide. For example, silicon carbide may be 37-60% by mass, titanium silicide may be 31-41% by mass, silicon carbide titanium may be 5-25% by mass, and titanium carbide may be 1-4% by mass. In addition, the open porosity of the composite material is preferably 1% or less. The porosity can be measured by the Archimedes method using pure water as a medium. The details of such a composite material are described in Japanese Patent No. 5666748. The concave surface 32 includes, for example, a mortar-shaped concave surface or a spherical concave surface. However, a spherical concave surface is preferable. In addition, the depth of the most depressed part of the concave surface 32 is preferably 1-100 μm, and more preferably 40-60 μm. The thickness of the support substrate 30 is not particularly limited, but is preferably, for example, 7 mm or more and 15 mm or less. However, a cooling base material (not shown) may be joined to the surface of the supporting substrate 30 on the opposite side to the concave surface 32. The cooling base material may be made of, for example, aluminum or aluminum alloy, and has a refrigerant passage inside.

金屬接合層40係將靜電吸盤20之與晶圓載置面22為相反側的面23與支持基板30的凹面相接合的層，由Al-Si-Mg系或Al-Mg系材料所構成。靜電吸盤20係在變形為與凹面32為相同形狀亦即凹形狀的狀態下，藉由金屬接合層40而被接合在凹面32。該金屬接合層40係如後所述藉由TCB 所形成。TCB接合強度係可提高為比變形為凹形狀的靜電吸盤20欲恢復成原本的平板狀的強度為更高。因此，並不會有在金屬接合層40發生剝落的情形。靜電吸盤20的晶圓載置面22或靜電電極24係伴隨靜電吸盤20變形為凹形狀而變形為同樣的凹形狀。因此，介電質層28係在面內成為相同厚度。金屬接合層40的厚度並非為特別限定者，以1~300μm為佳，以50~150μm為較佳。此外，金屬接合層40的外周係以不會由靜電吸盤20的外徑突出為佳。 The metal bonding layer 40 is a layer that bonds the surface 23 of the electrostatic chuck 20 opposite to the wafer placement surface 22 and the concave surface of the support substrate 30, and is composed of an Al-Si-Mg-based or Al-Mg-based material. The electrostatic chuck 20 is deformed into the same shape as the concave surface 32, that is, a concave shape, and is bonded to the concave surface 32 by the metal bonding layer 40. The metal bonding layer 40 is formed by TCB as described later. The TCB bonding strength can be improved to be higher than the strength of the electrostatic chuck 20 deformed into a concave shape to be restored to the original flat shape. Therefore, the metal bonding layer 40 does not peel off. The wafer mounting surface 22 or the electrostatic electrode 24 of the electrostatic chuck 20 is deformed into the same concave shape as the electrostatic chuck 20 is deformed into a concave shape. Therefore, the dielectric layer 28 has the same thickness in the plane. The thickness of the metal bonding layer 40 is not particularly limited, and is preferably 1 to 300 μm, and more preferably 50 to 150 μm. In addition, it is preferable that the outer periphery of the metal bonding layer 40 does not protrude from the outer diameter of the electrostatic chuck 20.

其中，在半導體製造裝置用元件10，亦可以上下方向貫穿半導體製造裝置用元件10的方式，設置用以對晶圓背面供給He氣體的氣體供給孔、或用以插通將晶圓由晶圓載置面22上抬的上升銷的上升銷插通孔。 Among them, the semiconductor manufacturing device component 10 can also be provided with a gas supply hole for supplying He gas to the back surface of the wafer by penetrating the semiconductor manufacturing device component 10 in the up and down direction, or for inserting the wafer to be carried by the wafer. The ascending pin insertion hole of the ascending pin raised up on the mounting surface 22.

接著，說明半導體製造裝置用元件10之使用例。首先，在將半導體製造裝置用元件10設置在未圖示之真空腔室內的狀態下，將晶圓載置於晶圓載置面22。接著，藉由真空泵，將真空腔室內減壓而以形成為預定真空度的方式進行調整，對靜電電極24施加直流電壓而使其發生庫侖力，將晶圓吸附固定在晶圓載置面22。晶圓載置面22係形成為凹形狀，因此與晶圓載置面22形成為凸形狀的情形相比，晶圓係安定地被保持在晶圓載置面22。接著，將真空腔室內形成為預定壓力(例如數10~數100Pa)的反應氣體環境，在該狀態下，使電漿發生。接著，藉由所發生的電漿，進行晶圓表面的蝕刻。未圖示之控制器係以晶圓的溫度成為預先設定的目標溫度的方式，控制供給至加熱器電極26的電力。 Next, an example of use of the element 10 for a semiconductor manufacturing apparatus will be described. First, the wafer is mounted on the wafer mounting surface 22 in a state where the element 10 for a semiconductor manufacturing apparatus is installed in a vacuum chamber (not shown). Next, a vacuum pump is used to reduce the pressure in the vacuum chamber to adjust to a predetermined degree of vacuum. A DC voltage is applied to the electrostatic electrode 24 to generate a Coulomb force to adsorb and fix the wafer on the wafer mounting surface 22. Since the wafer mounting surface 22 is formed in a concave shape, the wafer is stably held on the wafer mounting surface 22 compared to a case where the wafer mounting surface 22 is formed in a convex shape. Next, a reaction gas environment of a predetermined pressure (for example, several tens to several 100 Pa) is formed in the vacuum chamber, and in this state, plasma is generated. Then, by the generated plasma, the wafer surface is etched. The controller (not shown) controls the power supplied to the heater electrode 26 so that the temperature of the wafer becomes a preset target temperature.

接著，說明半導體製造裝置用元件10之製造例。第3圖係靜電吸盤20的製造工序圖，第4圖係支持基板30的製造工序圖，第5圖係半導體製造裝置用元件10的製造工序圖。 Next, a manufacturing example of the element 10 for a semiconductor manufacturing device will be described. FIG. 3 is a manufacturing process diagram of the electrostatic chuck 20, FIG. 4 is a manufacturing process diagram of the support substrate 30, and FIG. 5 is a manufacturing process diagram of the element 10 for a semiconductor manufacturing apparatus.

靜電吸盤20係可如下所示來製造。首先，準備圓盤狀的氧化鋁製的第1及第2生坯片材201、202，在第1生坯片材201的其中一方表面形成靜電電極24，且在第2生坯片材202的其中一方表面形成加熱器電極26(參照第3圖(a))。以電極的形成方法而言，係可使用例如網版印刷、PVD、CVD、鍍敷等。接著，在第1生坯片材201之形成有靜電電極24的面，積層其他氧化鋁製的生坯片材(第3生坯片材203)(參照第3圖(b))，在其上以加熱器電極26與第3生坯片材203相接的方式積層第2生坯片材202而形成為積層體220(參照第3圖(c))。或者，雖未圖示，亦可在模具以靜電電極24成為上方的方式配置第1生坯片材201，在其形成有靜電電極24的面，以所造粒出的氧化鋁顆粒全面舖成預定厚度，以加熱器電極26與氧化鋁顆粒之層相接的方式在其上積層第2生坯片材202，進行總括衝壓而形成為積層體220。接著，將積層體220藉由熱壓法進行燒成，藉此可得埋設有靜電電極24及加熱器電極26的陶瓷燒結體204(參照第3圖(d))。對所得之陶瓷燒結體204的兩面施行研削加工或噴砂加工等，藉此調整形狀或厚度，可得平板狀的靜電吸盤20(參照第3圖(e))。該靜電吸盤20之中，晶圓載置面22、其相反側的面23、與靜電電極24係形成為平行。其中，亦可使用藉由澆鑄法所製作的氧化鋁成形體，來取代氧化鋁製的生坯片材。或 者，亦可使用氧化鋁燒結體來取代第1及第2生坯片材201、202，或使用氧化鋁燒結體來取代第3生坯片材203。關於靜電吸盤20的具體製造條件，若參考例如日本特開2006-196864號公報所記載的條件來設定即可。 The electrostatic chuck 20 can be manufactured as follows. First, the first and second green sheets 201, 202 made of alumina in the shape of a disc are prepared, the electrostatic electrode 24 is formed on one of the surfaces of the first green sheet 201, and the second green sheet 202 A heater electrode 26 is formed on one of the surfaces (see Fig. 3(a)). In terms of the electrode formation method, for example, screen printing, PVD, CVD, plating, etc. can be used. Next, on the surface of the first green sheet 201 on which the electrostatic electrode 24 is formed, another green sheet made of alumina (the third green sheet 203) is laminated (refer to FIG. 3(b)), in which The second green sheet 202 is laminated on the upper side such that the heater electrode 26 and the third green sheet 203 are in contact with each other to form a laminated body 220 (see Fig. 3(c)). Alternatively, although not shown in the figure, the first green sheet 201 may be placed on the mold so that the electrostatic electrode 24 is positioned above, and the surface on which the electrostatic electrode 24 is formed is spread out with the granulated alumina particles. With a predetermined thickness, the second green sheet 202 is laminated on it so that the heater electrode 26 is in contact with the layer of alumina particles, and is collectively pressed to form a laminated body 220. Next, the laminated body 220 is fired by a hot pressing method, thereby obtaining a ceramic sintered body 204 in which the electrostatic electrode 24 and the heater electrode 26 are embedded (see FIG. 3(d)). Grinding or sandblasting is performed on both surfaces of the obtained ceramic sintered body 204 to adjust the shape or thickness to obtain a flat electrostatic chuck 20 (see Fig. 3(e)). In this electrostatic chuck 20, the wafer mounting surface 22, the surface 23 on the opposite side, and the electrostatic electrode 24 are formed in parallel. Among them, an alumina molded body produced by a casting method may be used instead of a green sheet made of alumina. Alternatively, an alumina sintered body may be used instead of the first and second green sheets 201 and 202, or an alumina sintered body may be used instead of the third green sheet 203. The specific manufacturing conditions of the electrostatic chuck 20 may be set with reference to, for example, the conditions described in Japanese Patent Application Laid-Open No. 2006-196864.

支持基板30係可如下所示來製造。首先，製作複合材料製的圓盤元件301(參照第4圖(a))。在此係製作含有以含有平均粒徑為10μm以上25μm以下的碳化矽原料粒子39~51質量%，並且含有Ti及Si的方式所選擇出的1種以上的原料，關於由除了碳化矽之外的原料而來的Si及Ti，Si/(Si+Ti)的質量比為0.26~0.54的粉體混合物。以原料而言，可使用例如碳化矽與金屬Si與金屬Ti。此時，以碳化矽成為39~51質量%、金屬Si成為16~24質量%、金屬Ti成為26~43質量%的方式進行混合為佳。接著，將所得之粉體混合物藉由單軸加壓成形製作圓盤狀的成形體，使該成形體在惰性氣體環境下藉由熱壓以1370~1460℃進行燒結，藉此獲得複合材料製的圓板元件。其中，熱壓時的衝壓壓力係設定為例如50~300kgf/cm2。接著，將所得之圓盤元件301藉由研削加工等，以上面成為所希望的凹面32的方式而且以側面具有段差的方式形成，而得支持基板30(參照第4圖(b))。氧化鋁的40~570℃的線熱膨脹係數為7.7×10-6/K，因此使用40~570℃的線熱膨脹係數為7.5~7.9×10-6/K者，作為支持基板30。關於支持基板30的具體製造條件，若參考例如日本專利第5666748號公報所記載的條件來設定即可。 The supporting substrate 30 can be manufactured as follows. First, a disc element 301 made of a composite material is produced (see Fig. 4(a)). In this system, one or more raw materials selected from silicon carbide raw material particles with an average particle size of 10 μm or more and 25 μm or less, and containing Ti and Si are produced at 39 to 51% by mass. Si and Ti from the raw materials, Si/(Si+Ti) is a powder mixture with a mass ratio of 0.26 to 0.54. In terms of raw materials, for example, silicon carbide, metal Si, and metal Ti can be used. At this time, it is preferable to mix so that silicon carbide becomes 39-51 mass%, metal Si becomes 16-24 mass%, and metal Ti becomes 26-43 mass%. Next, the obtained powder mixture is formed by uniaxial compression molding to produce a disc-shaped molded body, and the molded body is sintered at 1370~1460°C by hot pressing in an inert gas environment, thereby obtaining a composite material. Circular plate element. Among them, the pressing pressure at the time of hot pressing is set to, for example, 50 to 300 kgf/cm 2 . Next, the obtained disk element 301 is formed by grinding processing or the like so that the upper surface becomes the desired concave surface 32 and the side surface has a step to obtain a supporting substrate 30 (see Fig. 4(b)). The coefficient of linear thermal expansion of alumina at 40 to 570°C is 7.7×10 -6 /K. Therefore, the coefficient of linear thermal expansion at 40 to 570°C of 7.5 to 7.9×10 -6 /K is used as the supporting substrate 30. The specific manufacturing conditions of the support substrate 30 may be set with reference to the conditions described in, for example, Japanese Patent No. 5666748.

半導體製造裝置用元件10係可如下所示來製造。 在支持基板30的凹面32載置平板狀的金屬接合材401，且在其上以與晶圓載置面22為相反側的面23與金屬接合材401接觸的方式載置平板狀的靜電吸盤20(參照第5圖(a))。藉此，成為在支持基板30的凹面32與平板狀的靜電吸盤20的面23之間夾有金屬接合材401的狀態。接著，以金屬接合材401的固相線溫度以下(例如由固相線溫度減掉20℃後的溫度以上固相線溫度以下)的溫度，將支持基板30與靜電吸盤20進行熱壓接合(TCB)，藉此使靜電吸盤20變形為與凹面32為相同形狀(參照第5圖(b))。藉此金屬接合材401係成為金屬接合層40。以金屬接合材401而言，係可使用Al-Mg系接合材或Al-Si-Mg系接合材。例如，若使用Al-Si-Mg系接合材(含有88.5重量%的Al、10重量%的Si、1.5重量%的Mg，固相線溫度為約560℃)，藉由TCB進行接合時，在真空氣體環境下，在加熱為540~560℃(例如550℃)的狀態下，將靜電吸盤20以0.5~2.0kg/mm2(例如1.5kg/mm2)的壓力加壓數小時。金屬接合材401係以使用厚度為100μm前後者為佳。接著，在靜電吸盤20的晶圓載置面22黏貼浮凸圖案遮罩50，對晶圓載置面22噴射未圖示之鼓風介質來進行噴砂加工(參照第5圖(c))。此時，靜電吸盤20、金屬接合層40及支持基板30的各側面係以保養遮罩52覆蓋，俾以不會受到噴砂加工影響。以鼓風介質的材質而言，係可使用例如SiC或Al2O3。藉由噴砂加工，在晶圓載置面22形成密封帶22a或浮凸22b。之後，藉由卸下保養遮罩52，可得半導體製造裝置用元件10(參照第5圖(d))。 The element 10 series for a semiconductor manufacturing apparatus can be manufactured as follows. A flat metal bonding material 401 is placed on the concave surface 32 of the support substrate 30, and a flat electrostatic chuck 20 is placed thereon such that the surface 23 opposite to the wafer placement surface 22 is in contact with the metal bonding material 401 (Refer to Figure 5(a)). Thereby, the metal bonding material 401 is sandwiched between the concave surface 32 of the support substrate 30 and the surface 23 of the flat electrostatic chuck 20. Next, the support substrate 30 and the electrostatic chuck 20 are thermocompression-bonded at a temperature below the solidus temperature of the metal bonding material 401 (for example, a temperature equal to or higher than the solidus temperature minus 20°C from the solidus temperature). TCB), thereby deforming the electrostatic chuck 20 into the same shape as the concave surface 32 (see Fig. 5(b)). Thereby, the metal bonding material 401 becomes the metal bonding layer 40. As for the metal bonding material 401, an Al-Mg-based bonding material or an Al-Si-Mg-based bonding material can be used. For example, if an Al-Si-Mg-based bonding material is used (containing 88.5 wt% Al, 10 wt% Si, 1.5 wt% Mg, and the solidus temperature is about 560°C), when the TCB is used for bonding, the In a vacuum atmosphere, the electrostatic chuck 20 is pressurized at a pressure of 0.5 to 2.0 kg/mm 2 (for example, 1.5 kg/mm 2 ) for several hours while being heated to 540 to 560° C. (for example, 550° C.). The metal bonding material 401 is preferably used with a thickness around 100 μm. Next, the relief pattern mask 50 is pasted on the wafer mounting surface 22 of the electrostatic chuck 20, and a blowing medium (not shown) is sprayed on the wafer mounting surface 22 to perform sandblasting (see FIG. 5(c)). At this time, each side surface of the electrostatic chuck 20, the metal bonding layer 40, and the support substrate 30 is covered by the maintenance mask 52 so as not to be affected by the sandblasting process. Regarding the material of the blowing medium, for example, SiC or Al 2 O 3 can be used. By sandblasting, the sealing tape 22a or the relief 22b is formed on the wafer mounting surface 22. After that, by removing the maintenance mask 52, the component 10 for a semiconductor manufacturing apparatus can be obtained (refer to FIG. 5(d)).

在以上說明之半導體製造裝置用元件10之製法中，構成靜電吸盤20的氧化鋁與構成支持基板30的複合材料的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下，因此當將二者以TCB相接合時，沒有或幾乎沒有因該線熱膨脹係數差而變形的情形。此外，在支持基板30的凹面32與靜電吸盤20之與晶圓載置面22為相反側的面23之間夾著Al-Si-Mg系或Al-Mg系材料製的金屬接合材401，以該金屬接合材401的固相線溫度以下的溫度將兩者進行TCB接合，因此在金屬接合層40的厚度不易產生不均。由此，可使靜電吸盤20精度佳地反映支持基板30的凹面形狀。 In the above-described method for manufacturing the component 10 for a semiconductor manufacturing device, the absolute value of the difference in the coefficient of linear thermal expansion at 40 to 570°C between the alumina constituting the electrostatic chuck 20 and the composite material constituting the support substrate 30 is 0.2×10 -6 /K Hereinafter, when the two are joined by TCB, there is no or almost no deformation due to the difference in linear thermal expansion coefficient. In addition, a metal bonding material 401 made of Al-Si-Mg-based or Al-Mg-based materials is sandwiched between the concave surface 32 of the support substrate 30 and the surface 23 of the electrostatic chuck 20 on the opposite side to the wafer mounting surface 22 to Since the metal bonding material 401 is TCB-bonded at a temperature equal to or lower than the solidus temperature, the thickness of the metal bonding layer 40 is unlikely to be uneven. As a result, the electrostatic chuck 20 can accurately reflect the concave shape of the support substrate 30.

此外，支持基板30的凹面32係凹陷為球面狀的面，凹面32的曲率係任何之處均為相同，故在接合時可等分布加重。因此，容易使因金屬接合材401所致之接合強度均一。 In addition, the concave surface 32 of the support substrate 30 is a spherical concave surface, and the curvature of the concave surface 32 is the same everywhere, so the uniform distribution can be increased during bonding. Therefore, it is easy to make the bonding strength due to the metal bonding material 401 uniform.

此外，即使在支持基板30的凹面32之中最為凹陷之處的深度相對較深的情形下，藉由上述製法，可以充分的接合強度將靜電吸盤20與支持基板30相接合。 In addition, even in the case where the depth of the most recessed part of the concave surface 32 of the support substrate 30 is relatively deep, the electrostatic chuck 20 and the support substrate 30 can be bonded with sufficient bonding strength by the above-mentioned manufacturing method.

再此外，支持基板30所使用的複合材料係含有碳化矽37~60質量%，並且分別含有矽化鈦、碳化矽鈦及碳化鈦比前述碳化矽的質量%更為少量者，與氧化鋁的線熱膨脹係數差極小，因此適於作為支持基板30的材料。 In addition, the composite material used for the support substrate 30 contains 37-60% by mass of silicon carbide, and respectively contains titanium silicide, titanium silicon carbide, and titanium carbide, which are smaller than the mass% of the aforementioned silicon carbide. The difference in the coefficient of thermal expansion is extremely small, so it is suitable as a material for the support substrate 30.

接著，若將靜電吸盤20的厚度設為2mm以上5mm以下、支持基板30的厚度設為7mm以上15mm以下，可得以下效果。亦即，靜電吸盤20被接合在支持基板30的凹面32時，在靜電吸盤20係作用欲恢復成平板狀的力，但是若將靜 電吸盤20的厚度設計為2mm以上Smm以下、支持基板30的厚度設計為7mm以上15mm以下，即使作用如此之力，亦可在使靜電吸盤20變形為與凹面32為相同形狀的狀態下容易接合在支持基板30。 Next, if the thickness of the electrostatic chuck 20 is 2 mm or more and 5 mm or less, and the thickness of the support substrate 30 is 7 mm or more and 15 mm or less, the following effects can be obtained. That is, when the electrostatic chuck 20 is bonded to the concave surface 32 of the support substrate 30, the electrostatic chuck 20 acts on the force to be restored to a flat plate shape. However, if the thickness of the electrostatic chuck 20 is designed to be 2 mm or more and S mm or less, the thickness of the support substrate 30 The thickness is designed to be 7 mm or more and 15 mm or less, and even if such a force is applied, the electrostatic chuck 20 can be easily bonded to the support substrate 30 in a state where the electrostatic chuck 20 is deformed into the same shape as the concave surface 32.

其中，本發明並非限定於上述實施形態，只要屬於本發明之技術範圍內，可以各種態樣實施，自不待言。 However, the present invention is not limited to the above-mentioned embodiments, as long as it falls within the technical scope of the present invention, it can be implemented in various forms, and it goes without saying.

例如，在上述之實施形態中，係在靜電吸盤20埋設靜電電極24與加熱器電極26，但是亦可省略加熱器電極26。 For example, in the above-mentioned embodiment, the electrostatic electrode 24 and the heater electrode 26 are embedded in the electrostatic chuck 20, but the heater electrode 26 may be omitted.

在上述之實施形態中，支持基板30的凹面32係形成為凹陷為球面狀的面，惟亦可形成為凹陷為研缽狀的面。凹陷為研缽狀的面係凹陷部分的空間形狀形成為圓錐狀。即使如此，亦得本發明之效果。但是，凹陷為研缽狀的面的中心部分與其他部位相比，有接合強度降低之虞。其係基於凹陷為研缽狀的面的中心部分係在接合時必須要較大的加重，TCB接合為等分布加重，因此中心部分的加重容易不足之故。 In the above-mentioned embodiment, the concave surface 32 of the support substrate 30 is formed as a surface recessed in a spherical shape, but it may be formed as a surface recessed in a mortar shape. The spatial shape of the concave portion of the surface system that is concave in the shape of a mortar is formed in a conical shape. Even so, the effect of the present invention can be obtained. However, the central part of the surface recessed in the shape of a mortar may lower the bonding strength compared to other parts. This is based on the fact that the central part of the concave mortar-shaped surface must be heavier when joining. TCB joining is equal-distributed heaviness, so the central part of the heaviness tends to be insufficient.

在上述之實施形態中，以氧化鋁構成靜電吸盤20，以含有Si、C及Ti的複合材料構成支持基板30，惟若為靜電吸盤20的陶瓷與支持基板30的複合材料的40~570℃的線熱膨脹係數差成為0.2×10-6/K以下的材料的組合，並非特別限定於該組合。 In the above embodiment, the electrostatic chuck 20 is made of alumina, and the support substrate 30 is made of a composite material containing Si, C, and Ti. However, if it is a composite material of the ceramic of the electrostatic chuck 20 and the support substrate 30, the temperature is 40~570°C. The difference in the coefficient of linear thermal expansion is a combination of materials of 0.2×10 -6 /K or less, and is not particularly limited to this combination.

本申請案係以2016年10月14日申請之日本專利申請第2016-202485號為優先權主張之基礎，藉由引用，在本說明書中包含其內容之全部。 This application is based on the Japanese Patent Application No. 2016-202485 filed on October 14, 2016 as the basis for the priority claim, and the entire content of the content is included in this specification by reference.

10‧‧‧半導體製造裝置用元件 10‧‧‧Components for semiconductor manufacturing equipment

20‧‧‧靜電吸盤 20‧‧‧Electrostatic chuck

22‧‧‧晶圓載置面 22‧‧‧Wafer mounting surface

23‧‧‧晶圓載置面22相反側的面 23‧‧‧The surface opposite to the wafer placement surface 22

30‧‧‧支持基板 30‧‧‧Support substrate

32‧‧‧凹面 32‧‧‧Concave

40‧‧‧金屬接合層 40‧‧‧Metal bonding layer

50‧‧‧浮凸圖案遮罩 50‧‧‧Embossed pattern mask

52‧‧‧保養遮罩 52‧‧‧Maintenance mask

401‧‧‧金屬接合材 401‧‧‧Metal bonding material

Claims (8)

一種半導體製造裝置用元件之製法，包含：(a)準備：具有晶圓載置面之陶瓷製且平板狀的靜電吸盤；具有與周緣相比為中央凹陷的形狀的凹面，由與前述陶瓷的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的複合材料所成之支持基板；及平板狀的金屬接合材的工序；及(b)在前述支持基板的前述凹面與前述靜電吸盤之與前述晶圓載置面為相反側的面之間夾著前述金屬接合材，以前述金屬接合材的固相線溫度以下的溫度，將前述支持基板與前述靜電吸盤進行熱壓接合，藉此使前述靜電吸盤變形為與前述凹面為相同形狀的工序，其中，前述凹面係最為凹陷之處的深度為40~60μm。 A method for manufacturing components for semiconductor manufacturing equipment, including: (a) Preparation: a ceramic and flat plate-shaped electrostatic chuck with a wafer placement surface; A support substrate made of a composite material whose absolute value of the difference in linear thermal expansion coefficient at ~570°C is 0.2×10 -6 /K or less; and the process of a flat metal bonding material; and (b) on the aforementioned concave surface of the aforementioned support substrate The metal bonding material is sandwiched between the surface of the electrostatic chuck opposite to the wafer placement surface, and the support substrate and the electrostatic chuck are heat-pressed at a temperature below the solidus temperature of the metal bonding material Bonding is a step in which the electrostatic chuck is deformed into the same shape as the concave surface, wherein the depth of the most concave portion of the concave surface is 40-60 μm. 如申請專利範圍第1項之半導體製造裝置用元件之製法，其中，前述凹面係凹陷為球面狀的面。 For example, the method for manufacturing a device for a semiconductor manufacturing device according to the first patent application, wherein the concave surface is a spherical surface. 如申請專利範圍第1或2項之半導體製造裝置用元件之製法，其中，前述陶瓷為氧化鋁，前述複合材料係含有碳化矽37~60質量%，並且分別含有矽化鈦、碳化矽鈦及碳化鈦比前述碳化矽的質量%更為少量的材料，前述金屬接合材係由Al-Si-Mg系或Al-Mg系材料所構成。 For example, the method for manufacturing components for semiconductor manufacturing equipment in the scope of patent application 1 or 2, wherein the ceramic is alumina, the composite material contains 37-60% by mass of silicon carbide, and contains titanium silicide, silicon carbide titanium, and carbide respectively. Titanium is a material having a smaller amount than the mass% of the aforementioned silicon carbide, and the aforementioned metal bonding material is composed of an Al-Si-Mg-based or Al-Mg-based material. 如申請專利範圍第1或2項之半導體製造裝置用元件之製法，其中，前述靜電吸盤係厚度為2mm以上5mm以下，前述支持基板係厚度為7mm以上15mm以下。 For example, in the method for manufacturing components for semiconductor manufacturing equipment in the first or second patent application, the electrostatic chuck has a thickness of 2 mm or more and 5 mm or less, and the support substrate has a thickness of 7 mm or more and 15 mm or less. 一種半導體製造裝置用元件，包括：靜電吸盤，具有晶圓載置面的陶瓷製；支持基板，具有與周緣相比為中央凹陷的形狀的凹面，由與前述陶瓷的40~570℃的線熱膨脹係數差的絕對值為0.2×10-6/K以下的複合材料所成；及金屬接合層，在前述靜電吸盤變形為與前述凹面為相同形狀的狀態下，將前述靜電吸盤之與前述晶圓載置面為相反側的面、與前述支持基板的前述凹面相接合，其中，前述凹面係最為凹陷之處的深度為40~60μm。 A component for a semiconductor manufacturing device, comprising: an electrostatic chuck, a ceramic product with a wafer mounting surface; a support substrate, a concave surface having a central recessed shape compared to the peripheral edge, and having a linear thermal expansion coefficient of 40 to 570°C compared with the aforementioned ceramic The difference is made of a composite material with an absolute value of 0.2×10 -6 /K or less; and a metal bonding layer, in which the electrostatic chuck is deformed into the same shape as the concave surface, and the electrostatic chuck is placed on the wafer The surface is the surface on the opposite side, and is joined to the concave surface of the support substrate, and the depth of the concave surface of the concave surface is 40-60 μm. 如申請專利範圍第5項之半導體製造裝置用元件，其中，前述凹面係凹陷為球面狀的面。 For example, the semiconductor manufacturing device component of the 5th patent application, wherein the concave surface is a spherical surface. 如申請專利範圍第5或6項之半導體製造裝置用元件，其中，前述陶瓷為氧化鋁，前述複合材料係含有碳化矽37~60質量%，並且分別含有矽化鈦、碳化矽鈦及碳化鈦比前述碳化矽的質量%更為少量的材料，前述金屬接合材係由Al-Si-Mg系或Al-Mg系材料所構成。 For example, the semiconductor manufacturing device component of the 5th or 6th patent application, wherein the aforementioned ceramic is alumina, the aforementioned composite material contains 37-60% by mass of silicon carbide, and respectively contains titanium silicide, titanium silicon carbide and titanium carbide. The material having a smaller mass% of the silicon carbide, and the metal bonding material is composed of an Al-Si-Mg-based or Al-Mg-based material. 如申請專利範圍第5或6項之半導體製造裝置用元件，其中，前述靜電吸盤係厚度為2mm以上5mm以下，前述支持基板係厚度為7mm以上15mm以下。 For example, the semiconductor manufacturing device component of the fifth or sixth patent application, wherein the electrostatic chuck has a thickness of 2 mm or more and 5 mm or less, and the support substrate has a thickness of 7 mm or more and 15 mm or less.
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102331072B1 (en) * 2018-04-27 2021-11-29 엔지케이 인슐레이터 엘티디 Wafer support
US12027406B2 (en) * 2018-05-28 2024-07-02 Niterra Co., Ltd. Method for manufacturing holding device and holding device
US20200035535A1 (en) * 2018-07-27 2020-01-30 Applied Materials, Inc. Metal bonded electrostatic chuck for high power application
KR102483443B1 (en) 2018-08-14 2023-01-04 삼성전자주식회사 Wafer bonding device, a wafer bonding apparatus for directly bonding wafers using the same and a method of bonding wafers in the wafer bonding apparatus
JP6627936B1 (en) * 2018-08-30 2020-01-08 住友大阪セメント株式会社 Electrostatic chuck device and method of manufacturing electrostatic chuck device
US11155500B2 (en) * 2018-11-13 2021-10-26 Saint-Gobain Ceramics & Plastics, Inc. Refractory articles and methods for forming same
KR102338223B1 (en) * 2019-02-20 2021-12-10 스미토모 오사카 세멘토 가부시키가이샤 electrostatic chuck device
JP7519171B2 (en) * 2019-06-17 2024-07-19 日本特殊陶業株式会社 Electrostatic chuck and method of operating same
JP7312031B2 (en) * 2019-06-17 2023-07-20 日本特殊陶業株式会社 ELECTROSTATIC CHUCK AND METHOD OF OPERATION THEREOF
US11302536B2 (en) * 2019-10-18 2022-04-12 Applied Materials, Inc. Deflectable platens and associated methods
US20230141651A1 (en) * 2019-10-18 2023-05-11 Kyocera Corporation Structure and heating device
JP7254216B2 (en) * 2020-01-22 2023-04-07 三菱電機株式会社 Semiconductor device manufacturing method
JP7319205B2 (en) * 2020-01-29 2023-08-01 日本碍子株式会社 Dense composite material, manufacturing method thereof, bonded body and member for semiconductor manufacturing equipment
CN115004353A (en) * 2020-01-31 2022-09-02 京瓷株式会社 Method for manufacturing ceramic structure
JP7368343B2 (en) * 2020-12-11 2023-10-24 日本碍子株式会社 Components for semiconductor manufacturing equipment and their manufacturing method
US11881423B2 (en) * 2021-02-09 2024-01-23 Applied Materials, Inc. Electrostatic chuck with metal bond
JP7514805B2 (en) * 2021-08-17 2024-07-11 日本碍子株式会社 Wafer placement table
WO2023063016A1 (en) * 2021-10-12 2023-04-20 日本碍子株式会社 Wafer placement stage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1529908A (en) * 2001-06-28 2004-09-15 ��ķ�о����޹�˾ Ceramic electrostatic chuck assembly and method of making
US20120211165A1 (en) * 2009-10-20 2012-08-23 Tokyo Electron Limited Sample table and microwave plasma processing apparatus
TW201243995A (en) * 2011-03-30 2012-11-01 Toto Ltd Electrostatic sucking disk
TW201506000A (en) * 2013-03-25 2015-02-16 Ngk Insulators Ltd Cooling plate, method for producing same and member for semiconductor manufacturing apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470447A (en) 1977-11-10 1979-06-06 Shimadaya Honten Kk Preparation of noodle like food
JP4252231B2 (en) * 2001-09-05 2009-04-08 日本碍子株式会社 Manufacturing method of semiconductor wafer support member assembly and semiconductor wafer support member assembly
JP3967278B2 (en) * 2003-03-07 2007-08-29 日本碍子株式会社 Joining member and electrostatic chuck
JP4542485B2 (en) 2004-12-14 2010-09-15 日本碍子株式会社 Alumina member and manufacturing method thereof
JP6182082B2 (en) * 2013-03-15 2017-08-16 日本碍子株式会社 Dense composite material, manufacturing method thereof, and member for semiconductor manufacturing equipment
JP5927260B2 (en) * 2014-10-02 2016-06-01 東京エレクトロン株式会社 Sample stage and microwave plasma processing equipment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1529908A (en) * 2001-06-28 2004-09-15 ��ķ�о����޹�˾ Ceramic electrostatic chuck assembly and method of making
US20120211165A1 (en) * 2009-10-20 2012-08-23 Tokyo Electron Limited Sample table and microwave plasma processing apparatus
TW201243995A (en) * 2011-03-30 2012-11-01 Toto Ltd Electrostatic sucking disk
TW201506000A (en) * 2013-03-25 2015-02-16 Ngk Insulators Ltd Cooling plate, method for producing same and member for semiconductor manufacturing apparatus

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