TWI726932B - Translucent conductive film, its manufacturing method, dimming film and its manufacturing method - Google Patents

Abstract

The light-transmitting conductive film of the present invention includes a light-transmitting substrate, a light-transmitting conductive layer, and an inorganic layer in this order. The thickness of the above-mentioned inorganic layer is 20 nm or less. The water contact angle of the above-mentioned inorganic layer is 50 degrees or less.

Description

Translucent conductive film, its manufacturing method, dimming film and its manufacturing method

The present invention relates to a light-transmitting conductive film, a manufacturing method thereof, a light-adjusting film and a manufacturing method thereof.

Heretofore, there has been known a liquid crystal optical element that includes a liquid crystal resin composite in which liquid crystals are dispersed and held in a resin matrix, and two substrates sandwiching them. For example, a liquid crystal optical element is proposed in which at least one substrate surface of the substrate contacted by the liquid crystal resin composite is covered by a thin film having substantially uniform wettability to the unhardened mixture used to form the liquid crystal resin composite (For example, refer to Patent Document 1). The substrate of Patent Document 1 is formed by forming ITO (Indium Tin Oxides) on a glass plate, and _{then depositing SiO 2} with a thickness of 60 nm on the ITO to form a thin film. Furthermore, in Patent Document 1, since the unhardened mixed liquid exhibits substantially uniform wettability on the entire substrate surface, it is difficult for bubbles to remain on the substrate surface. [Prior Art Document] [Patent Document] Patent Document 1: Japanese Patent Laid-Open No. 5-34667

[Problem to be Solved by the Invention] However, there are cases in which ITO is patterned by etching after _{forming a thin film of SiO 2.} Patent Document 1 discloses a _{step of forming an SiO 2} thin film after patterning ITO, but the above-mentioned steps are substantially unusable from the viewpoint of product quality and manufacturing cost. On the other hand, after the formation of ITO, a thin film with uniform wettability (for example, a SiO ₂ film with a thickness of 60 nm) is formed, and the patterning of ITO is performed later, the patterning of ITO may take a long time, or Inadequate situation where patterning cannot be performed substantially. The purpose of the present invention is to provide a light-transmitting conductive film that can quickly and reliably etch the light-transmitting conductive layer and a method of manufacturing the same; and a light-adjusting function layer that can form a uniform thickness on the surface of the inorganic layer by wet A manufacturing method of a light film, and a light control film obtained by the manufacturing method. [Technical Means for Solving the Problem] [1] The present invention is a light-transmitting conductive film, characterized in that it has a light-transmitting substrate, a light-transmitting conductive layer, and an inorganic layer in this order, and the thickness of the inorganic layer is 20 nm or less, the water contact angle of the above-mentioned inorganic layer is 50 degrees or less. Since the thickness of the inorganic layer of the light-transmitting conductive film is equal to or less than the specified upper limit, the light-transmitting conductive layer and the inorganic layer can be etched quickly and reliably. In addition, since the water contact angle of the inorganic layer after more than 80 hours after the formation of the inorganic layer is below a specific value, it is possible to form a light-adjusting functional layer of uniform thickness on the surface of the inorganic layer by wet method. Therefore, a light-adjusting film with excellent reliability can be obtained. [2] The present invention includes the translucent conductive film as described in [1] above, wherein the water contact angle of the inorganic layer after 80 hours or more has passed after the formation of the inorganic layer is 50 degrees or less. [3] The present invention includes the translucent conductive film as described in [1] or [2] above, wherein the inorganic layer contains an inorganic oxide. This light-transmitting conductive film has excellent hydrophilicity because the inorganic layer contains an inorganic oxide. [4] The present invention includes the translucent conductive film as described in any one of [1] to [3] above, wherein the translucent conductive layer has an indium-based conductive oxide layer, and the indium-based conductive oxide The thickness of the layer is below 50 nm. In this light-transmitting conductive film, since the thickness of the indium-based conductive oxide layer is less than or equal to the specific upper limit, the light-transmitting conductive layer and the inorganic layer can be etched quickly and reliably. [5] The present invention is a method for manufacturing a light-transmitting conductive film, which is characterized in that it comprises: step (1), which prepares a light-transmitting substrate; step (2), which is based on the above-mentioned light-transmitting base A light-transmitting conductive layer is formed on the surface of the material; step (3) is to form an inorganic layer on the surface of the light-transmitting conductive layer; and step (4) is to etch the light-transmitting layer after the above step (3) Conductive layer; and the thickness of the inorganic layer is 20 nm or less, and the water contact angle of the inorganic layer after 80 hours or more after the formation of the inorganic layer is 50 degrees or less. According to this method, in step (3), an inorganic layer having a thickness below a specific upper limit is formed. Therefore, in step (4) after step (3), the transparent conductive layer and the inorganic layer can be quickly and surely combined Etch together. In addition, since the water contact angle of the inorganic layer after more than 80 hours after the formation of the inorganic layer is below a specific value, it is possible to form a light-adjusting functional layer of uniform thickness on the surface of the inorganic layer by wet method. [6] The present invention includes the method for producing a translucent conductive film as described in [5] above, wherein in the step (2), the amorphous translucent conductive layer is formed, and after the step (3), , Further comprising the step (5) of crystallizing the above-mentioned amorphous transparent conductive layer. According to this method, in step (5) subsequent to step (3), the amorphous light-transmitting conductive layer is crystallized, so that the surface resistance of the light-transmitting conductive layer can be reduced. [7] The present invention is a light-controlling film characterized in that it includes a first light-transmitting conductive film, a light-adjusting functional layer, and a second light-transmitting conductive film in this order, the first light-transmitting conductive film and/ Or the second light-transmitting conductive film is the light-transmitting conductive film described in any one of [1] to [4] above, and the light-adjusting function layer is in contact with the inorganic layer of the light-transmitting conductive film . In this light control film, since the light control function layer is in contact with the inorganic layer of the light-transmitting conductive film, it can have a uniform thickness. Therefore, the reliability of the dimming film is excellent. [8] The present invention is a method for manufacturing a light-adjustable film, which is characterized in that it comprises: step (6), which is to manufacture two light-transmitting conductive films; and step (7), which is to use two of the above-mentioned The light-transmitting conductive layer sandwiches the light-adjusting functional layer; and in the step (6), at least one of the light-transmitting conductive films is manufactured by the manufacturing method described in [5] or [6], and in the step (6), In (7), the light control function layer is brought into contact with at least one inorganic layer of the light-transmitting conductive film. Furthermore, according to this method, in step (6), the dimming functional layer is in contact with at least one inorganic layer of the light-transmitting conductive film, so in step (7), a dimming functional layer with uniform thickness can be obtained . Therefore, the reliability of the dimming film is excellent. [Effects of the invention] In the light-transmitting conductive film of the present invention, the light-transmitting conductive layer and the inorganic layer can be etched quickly and surely, and a uniform thickness can be formed on the surface of the inorganic layer by a wet method. Optical function layer. Therefore, the reliability of the translucent conductive film is excellent. According to the manufacturing method of the light-transmitting conductive film of the present invention, the light-transmitting conductive layer can be etched quickly and surely, and a light-adjusting functional layer of uniform thickness can be formed on the surface of the inorganic layer by wet method. Since the light-adjusting film of the present invention has a light-transmitting conductive film with excellent reliability, it has excellent reliability. According to the manufacturing method of the light-adjustable film of the present invention, in step (6), the light-adjusting functional layer is in contact with at least one inorganic layer of the light-transmitting conductive film, so in step (7), a uniform thickness can be obtained The dimming function layer.

烯樹脂等。該等高分子膜可單獨使用或併用2種以上。就透光性、耐熱性、機械特性等觀點而言，較佳可列舉聚酯樹脂，更佳可列舉PET。 基底基材6之厚度例如為2 μm以上，較佳為20 μm以上，更佳為40 μm以上，又，例如為300 μm以下，較佳為200 μm以下。 2-2.功能層 功能層7係設置於基底基材6之一主面(上表面)，且賦予與目的對應之功能性之層。作為功能層7，例如可列舉：易接著層、下塗層或硬塗層等。易接著層具有提高與形成於基底基材6上之層(例如透光性導電層3)之密接性之功能。下塗層具有調整透光性導電膜1之反射率或光學色相之功能。硬塗層提高透光性導電膜1之耐擦傷性。 功能層7較佳為包含樹脂組合物，更佳為僅包含樹脂組合物。 樹脂組合物例如含有樹脂及粒子。樹脂組合物較佳為僅含有樹脂，更佳為僅包含樹脂。 作為樹脂，可列舉：硬化性樹脂、熱塑性樹脂(例如聚烯烴樹脂)等，較佳可列舉硬化性樹脂。 作為硬化性樹脂，可列舉：例如藉由活性能量線(具體而言，紫外線、電子束等)之照射而硬化之活性能量線硬化性樹脂；例如藉由加熱而硬化之熱硬化性樹脂等，較佳可列舉活性能量線硬化性樹脂。 活性能量線硬化性樹脂例如可列舉於分子中含有具有聚合性碳-碳雙鍵之官能基之聚合物。作為此種官能基，例如可列舉：乙烯基、(甲基)丙烯醯基(甲基丙烯醯基及/或丙烯醯基)等。 作為活性能量線硬化性樹脂，例如可列舉側鏈上含有官能基之(甲基)丙烯酸系樹脂(丙烯酸系樹脂及/或甲基丙烯酸系樹脂)等。 硬化性樹脂可單獨使用或併用2種以上。 功能層7之厚度例如為0.01 μm以上，較佳為0.1 μm以上，更佳為1 μm以上，又，例如為10 μm以下，較佳為5 μm以下。 透光性基材2之厚度、即基底基材6之厚度及功能層7之厚度之總厚度例如為5 μm以上，較佳為20 μm以上，更佳為45 μm以上，又，例如為300 μm以下，較佳為200 μm以下。 3.透光性導電層 透光性導電層3係可於後續步驟中藉由蝕刻任意地進行圖案化之導電層。 透光性導電層3具有膜形狀(包含片狀)，且係以與透光性基材2之上表面接觸之方式配置於透光性基材2之整個上表面。 透光性導電層3依序具備第1無機氧化物層8、金屬層9及第2無機氧化物層10。即，透光性導電層3具備：第1無機氧化物層8，其係配置於透光性基材2之上；金屬層9，其係配置於第1無機氧化物層8之上；及第2無機氧化物層10，其係配置於金屬層9之上。又，透光性導電層3較佳為僅包含第1無機氧化物層8、金屬層9及第2無機氧化物層10。第1無機氧化物層8及第2無機氧化物層10較佳為非晶質。 3-1.第1無機氧化物層 第1無機氧化物層8係與金屬層9及第2無機氧化物層10一併對透光性導電層3賦予導電性之導電層。第1無機氧化物層8可不保持導電性，但較佳為具有導電性。又，第1無機氧化物層8亦為防止來自透光性基材2中所含有之有機物之活性氣體滲出至金屬層9中之障壁層。第1無機氧化物層8為透光性導電層3中之最下層，且具有膜形狀(包含片狀)，係以與透光性基材2之上表面接觸之方式配置於透光性基材2之整個上表面。 第1無機氧化物層8含有下述可溶解於蝕刻液中之無機氧化物作為主成分。 作為無機氧化物，例如可列舉由選自由In、Sn、Zn、Ga、Sb、Ti、Si、Zr、Mg、Al、Au、Ag、Cu、Pd、W所組成之群中之至少1種金屬形成之金屬氧化物等。於金屬氧化物中，可視需要進而摻雜上述群所示之金屬原子。 作為無機氧化物，就降低比電阻之觀點、及確保優異之透光性之觀點而言，較佳可列舉氧化銦(包含銦系導電性氧化物)，更佳可列舉銦錫複合氧化物(ITO)。即，第1無機氧化物層8較佳為銦系導電性氧化物層，更佳為ITO層。 銦錫複合氧化物(ITO)中之氧化錫(SnO₂ )相對於氧化銦(In₂ O₃ )與氧化錫(SnO₂ )之合計質量之含有比率(SnO₂ /(SnO₂ ＋In₂ O₃ )例如為6質量%以上，較佳為8質量%以上，更佳為10質量%以上，進而較佳為12質量%以上，又，例如為30質量%以下，較佳為20質量%以下，更佳為17質量%以下。若氧化錫(SnO₂ )之質量比率未滿上述下限，則有第1無機氧化物層8之結晶性之經時變化變大，難以控制蝕刻性之虞。若氧化錫(SnO₂ )之質量比率超過上述上限，則有加濕可靠性降低之情形。 第1無機氧化物層8例如可為結晶質及非晶質中之任一種。就於後續步驟中容易實施圖案化之觀點而言，第1無機氧化物層8較佳為非晶質。 第1無機氧化物層8之厚度T8例如為5 nm以上，較佳為20 nm以上，更佳為30 nm以上，又，例如為100 nm以下，較佳為60 nm以下，更佳為50 nm以下。若第1無機氧化物層8之厚度T8為上述上限以下，則於後續步驟中，可迅速且確實地蝕刻透光性導電層3，若第1無機氧化物層8之厚度T8為上述下限以上，則可作為障壁層發揮作用。 3-2.金屬層 金屬層9係與第1無機氧化物層8及第2無機氧化物層10一併對透光性導電層3賦予導電性之導電層。又，金屬層9亦為降低透光性導電層3之比電阻之低比電阻化層。 金屬層9具有膜形狀(包含片狀)，且係以與第1無機氧化物層8之上表面接觸之方式配置於第1無機氧化物層8之上表面。 形成金屬層9之金屬例如為比電阻較小之金屬，且可溶解於與蝕刻第1無機氧化物層8之蝕刻液相同之蝕刻液中之金屬。作為金屬，並無特別限定，例如可列舉：包含選自由Ti、Si、Nb、In、Zn、Sn、Au、Ag、Cu、Al、Co、Cr、Ni、Pb、Pd、Pt、Cu、Ge、Ru、Nd、Mg、Ca、Na、W、Zr、Ta及Hf所組成之群中之1種金屬，或者含有2種以上之金屬之合金。 作為金屬，較佳可列舉銀(Ag)、銀合金，更佳可列舉銀合金。 銀合金含有銀作為主成分，且含有其他金屬作為副成分，其組成並無限定。作為銀合金之組成，例如可列舉：Ag-Pd合金、Ag-Pd-Cu合金、Ag-Pd-Cu-Ge合金、Ag-Cu-Au合金、Ag-Cu合金、Ag-Cu-Sn合金、Ag-Ru-Cu合金、Ag-Ru-Au合金、Ag-Pd合金、Ag-Nd合金、Ag-Mg合金、Ag-Ca合金、Ag-Na合金等。作為銀合金，較佳可列舉Ag-Pd合金。 銀合金(較佳為Ag-Pd合金)中之銀之含有比率例如為80質量%以上，較佳為85質量%以上，更佳為90質量%以上，進而較佳為95.0質量%以上，又，例如為99.9質量%以下。銀合金中之其他金屬之含有比率係上述銀之含有比率的剩餘部分。於金屬為Ag-Pd合金之情形時，關於Ag-Pd合金中之Pd之含有比率，具體而言，例如為0.1質量%以上，又，例如為10質量%以下，較佳為5質量%以下，更佳為1.0質量%以下。 就提高透光性導電層3之透過率之觀點而言，金屬層9之厚度例如為1 nm以上，較佳為5 nm以上，又，例如為30 nm以下，較佳為20 nm以下，更佳為10 nm以下。 3-3.第2無機氧化物層 第2無機氧化物層10係與第1無機氧化物層8及金屬層9一併對透光性導電層3賦予導電性之導電層。第2無機氧化物層10可不保持導電性，但較佳為具有導電性。又，第2無機氧化物層10亦為防止大氣中經常存在之氧或水蒸氣、或者微量存在之硫氧化物(SO_x )等浸蝕金屬層9之障壁層。第2無機氧化物層10為透光性導電層3中之最上層，且具有膜形狀(包含片狀)，係以與金屬層9之上表面接觸之方式配置於金屬層9之整個上表面。 第2無機氧化物層10含有第1無機氧化物層8中所例示之無機氧化物，具體而言，為可溶解於與蝕刻第1無機氧化物層8之蝕刻液相同之蝕刻液中之無機氧化物，較佳為含有氧化銦，更佳為包含ITO。即，第2無機氧化物層10較佳為銦系導電性氧化物層，更佳為ITO層。 銦錫複合氧化物(ITO)中之氧化錫(SnO₂ )相對於氧化銦(In₂ O₃ )與氧化錫(SnO₂ )之合計質量之含有比率(SnO₂ /(SnO₂ ＋In₂ O₃ )例如為6質量%以上，較佳為8質量%以上，更佳為10質量%以上，進而較佳為12質量%以上，又，例如為30質量%以下，較佳為20質量%以下，更佳為17質量%以下。若氧化錫(SnO₂ )之含有比率未滿上述下限，則有第2無機氧化物層10之結晶性之經時變化變大，難以控制蝕刻性之虞。若氧化錫(SnO₂ )之含有比率超過上述上限，則有加濕可靠性降低之情形。 第2無機氧化物層10例如可為結晶質及非晶質中之任一種。就於後續步驟中容易實施圖案化之觀點而言，第2無機氧化物層10較佳為非晶質。 就於蝕刻時獲得良好之圖案剖面之觀點而言，第1無機氧化物層8及第2無機氧化物層10較佳為均為相同之膜質，更佳為均為非晶質。 第2無機氧化物層10之厚度T10例如為5 nm以上，較佳為20 nm以上，進而較佳為30 nm以上，又，例如為100 nm以下，較佳為60 nm以下，更佳為50 nm以下。 若第2無機氧化物層10之厚度T10為上述上限以下，則於後續步驟中，可迅速且確實地蝕刻透光性導電層3，若第2無機氧化物層10之厚度T10為上述下限以上，則可作為障壁層發揮作用。 又，第1無機氧化物層8之厚度T8及第2無機氧化物層10之厚度T10中至少1層的厚度例如為80 nm以下，較佳為50 nm以下。較佳為第1無機氧化物層8之厚度T8及第2無機氧化物層10之厚度T10之兩者均為例如50 nm以下。若第1無機氧化物層8之厚度T8及/或第2無機氧化物層10之厚度T10為上述上限以下，則於後續步驟中，可迅速且確實地蝕刻透光性導電層3。 而且，透光性導電層3之厚度、即第1無機氧化物層8、金屬層9及第2無機氧化物層10之總厚度較佳為20 nm以上，更佳為40 nm以上，又，例如為230 nm以下，較佳為120 nm以下，更佳為100 nm以下。 4.無機層 無機層4為透光性導電膜1之最上層，且具有膜形狀(包含片狀)。無機層4係以與第2無機氧化物層10之上表面接觸之方式配置於第2無機氧化物層10之整個上表面。 無機層4係對透光性導電層3(具體而言，第2無機氧化物層10)之上表面(表面)賦予親水性之親水層。 又，無機層4將於下文敍述，因較佳為藉由濺鍍法而形成，故為濺鍍層。 無機層4例如包含親水性材料。作為親水性材料，並無限定，例如包含親水性材料。作為親水性材料，可列舉：例如氧化矽、氧化鈦(具體而言，TiO₂ )、氧化鋁(具體而言，Al₂ O₃ )等無機氧化物；例如沸石等金屬鹽等。作為親水性材料，較佳可列舉無機氧化物，更佳可列舉氧化矽。 關於氧化矽，具體而言係由SiO_x 而表示，x例如為1.0以上，較佳為1.5以上，又，例如為2.0以下。具體而言，作為氧化矽，例如可列舉SiO、SiO₂ (二氧化矽)等，較佳可列舉SiO₂ 。 無機層4之厚度T4為20 nm以下，較佳為10 nm以下，更佳為未達10 nm，進而較佳為5.0 nm以下，尤佳為未達5.0 nm，最佳為4.5 nm以下，進而為3.0 nm以下，又，例如為0.01 nm以上，較佳為0.1 nm以上，更佳為0.5 nm以上，進而較佳為1.0 nm以上。 若無機層4之厚度T4超過上述上限，則無法迅速且確實地蝕刻透光性導電層3。進而，若無機層4之厚度T4超過上述上限，則雖可將下述剛形成無機層4後之無機層4之水接觸角θ0設定為較低，但下述水接觸角之比(θ1/θ0)變高(具體而言，4.0以上)，因此，形成無機層4後經過80小時以上後之無機層4之水接觸角θ1變高。因此，有形成無機層4後經過80小時以上後之無機層4之水接觸角θ1產生偏差之情況。 另一方面，若無機層4之厚度T4為上述下限以上，則可獲得優異之潤濕性。 又，無機層4之厚度T4相對於第2無機氧化物層10之厚度T10之比(無機層4之厚度T4/第2無機氧化物層10之厚度T10)例如為0.01以上，較佳為0.02以上，又，例如為0.50以下，較佳為0.25以下，更佳為0.15以下，進而較佳為0.10以下。 若上述厚度之比為上述下限以上，則可獲得優異之潤濕性。 若上述厚度之比超過上述上限，則無法迅速且確實地蝕刻透光性導電層3。若上述厚度之比超過上述下限，則有形成無機層4後經過80小時以上後之無機層4之水接觸角θ1產生偏差之情況。 而且，無機層4之水接觸角θ1(於下文敍述，形成無機層4後經過80小時以上後之水接觸角θ1)為50度以下，較佳為40度以下，更佳為30度以下，進而較佳為20度以下，尤佳為未達20度，最佳為10度以下，又，例如為0度以上，較佳為1度以上，更佳為5度以上。 無機層4之水接觸角θ1係形成無機層4後，根據JIS R1753：2013對於常溫(具體而言，20～40℃)常濕(具體而言，相對濕度30%以上且70%以下)之環境下放置80小時以上之無機層4進行測定。更具體之水接觸角θ1之測定方法係於後續實施例中進行說明。 若形成無機層4後經過80小時以上後之無機層4之水接觸角θ1超過上述上限，則無法藉由濕式於無機層4之表面形成均勻厚度之調光功能層5(於下文敍述)。 5.透光性導電膜之製造方法 其次，對製造透光性導電膜1之方法進行說明。 該方法包括：步驟(1)，其係準備透光性基材2；步驟(2)，其係於透光性基材2之表面形成透光性導電層3；及步驟(3)，其係於透光性導電層3之表面形成無機層4。以下，詳述各步驟。 5-1.步驟(1) 於步驟(1)中，首先準備基底基材6。 繼而，將功能層7配置於基底基材6之上表面。例如，藉由濕式而配置功能層7。具體而言，首先將樹脂組合物塗佈於基底基材6之上表面。其後，於樹脂組合物含有活性能量線硬化性樹脂之情形時，照射活性能量線。 藉此，於透光性基材2之整個上表面形成膜形狀之功能層7。即，製作具備基底基材6及功能層7之透光性基材2。 5-2.步驟(2) 於步驟(2)中，於步驟(1)之後，例如藉由乾式將透光性導電層3配置(積層)於功能層7之上表面。 具體而言，依序藉由乾式而配置第1無機氧化物層8、金屬層9及第2無機氧化物層10之各者。 作為乾式，例如可列舉：真空蒸鍍法、濺鍍法、離子鍍覆法等。較佳可列舉濺鍍法。 作為濺鍍法中所使用之氣體，例如可列舉Ar等惰性氣體。又，可視需要併用氧等反應性氣體。於併用反應性氣體之情形時，反應性氣體之流量相對於惰性氣體之流量之比(反應性氣體之流量/惰性氣體之流量)例如為0.1/100以上，較佳為0.5/100以上，又，例如為10/100以下，較佳為5/100以下。 具體而言，於第1無機氧化物層8及第2無機氧化物層10各自之形成中，較佳為併用惰性氣體及反應性氣體作為氣體。 另一方面，於金屬層9之形成中，較佳為單獨使用惰性氣體作為氣體。於第2無機氧化物層10之形成中，較佳為併用惰性氣體及反應性氣體作為氣體。 較佳為以非晶質之形式形成透光性導電層3。具體而言，形成非晶質之第1無機氧化物層8及非晶質之第2無機氧化物層10。 藉此，於透光性基材2之上形成依序形成有第1無機氧化物層8、金屬層9及第2無機氧化物層10之透光性導電層3。 透光性導電層3之表面電阻(具體而言，非晶質之透光性導電層3之表面電阻)例如為1 Ω/□以上，較佳為3 Ω/□以上，更佳為8 Ω/□以上，又，例如為100 Ω/□以下，較佳為50 Ω/□以下，進而較佳為30 Ω/□以下。 5-3.步驟(3) 於步驟(3)中，於步驟(2)之後，例如藉由乾式將無機層4配置(積層)於第2無機氧化物層10之上表面。 作為乾式，例如可列舉：真空蒸鍍法、濺鍍法、離子鍍覆法等。就均勻且以上述厚度T4形成無機層4之觀點而言，較佳可列舉濺鍍法。另一方面，若為真空蒸鍍法，則有無機層4之厚度T4之偏差變大之情形，又，有無機層4之潤濕性降低，進而，無機層4自透光性導電層3剝離之情形。 作為濺鍍法中所使用之氣體，例如可列舉Ar等惰性氣體。又，可視需要併用氧等反應性氣體。於併用反應性氣體之情形時，反應性氣體之流量相對於惰性氣體之流量之比(反應性氣體之流量/惰性氣體之流量)例如為1/100以上，較佳為10/100以上，更佳為20/100以上，又，例如為90/100以下，較佳為50/100以下。 剛形成無機層4後(具體而言，形成無機層4後500分鐘以內)之無機層4之水接觸角θ0為50度以下，較佳為40度以下，更佳為20度以下，進而較佳為10度以下，又，例如為0度以上，較佳為5度以上，更佳為超過6度，更佳為7度以上。 另一方面，形成無機層4後經過80小時以上後之無機層4之水接觸角θ1係相對於剛形成無機層4後之水接觸角θ0發生變化。具體而言，形成無機層4後經過80小時以上後之水接觸角θ1相對於剛形成無機層4後之水接觸角θ0之比(θ1/θ0)例如為0.3以上，較佳為0.5以上，更佳為1.0以上，進而較佳為2.0以上，又，例如未達4.5，較佳為4.0以下，更佳為3.5以下，進而較佳為3.0以下，尤佳為未達3.0。若上述比為上述上限以下，則可抑制形成無機層4後經過80小時以上後之無機層4之水接觸角θ1產生偏差。 藉此，獲得依序具備透光性基材2、透光性導電層3及無機層4之透光性導電膜1。 透光性導電膜1之總厚度例如為2 μm以上，較佳為20 μm以上，又，例如為300 μm以下，較佳為200 μm以下，更佳為150 μm以下。 該透光性導電膜1係產業上可利用之器件。 5-4.步驟(4) 透光性導電膜1之製造方法進而於步驟(3)之後，包括蝕刻透光性導電層3之步驟(4)。 於步驟(4)中，於步驟(3)之後，蝕刻透光性導電層3。具體而言，將透光性導電層3與無機層4一併蝕刻，將透光性導電層3及無機層4圖案化為特定形狀。 作為蝕刻液，只要為可溶解透光性導電層3之溶液則並無特別限定，例如可列舉：硝酸、磷酸、乙酸、鹽酸、硫酸、草酸及該等之混合液等。 蝕刻時間例如為5分鐘以下，較佳為4分鐘以下，更佳為3分鐘以下，又，例如為0.05分鐘以上，較佳為0.1分鐘以上，更佳為0.5分鐘以上。若蝕刻時間為上述上限以下，則可藉由捲對捲方式以優異之生產效率實施透光性導電膜1之製造方法。 藉此，獲得依序具備透光性基材2、經圖案化之透光性導電層3、及經圖案化之無機層4之透光性導電膜1。 再者，藉由捲對捲方式實施上述製造方法。又，亦可藉由分批方式實施一部分或全部。 6.調光膜之製造方法 其次，參照圖2對使用上述透光性導電膜1而製造調光膜20之方法進行說明。 該方法如圖2所示，包括：步驟(6)，其係製造2個上述透光性導電膜1；及步驟(7)，其係藉由2個透光性導電膜1夾持調光功能層5。 6-1.步驟(6) 於步驟(6)中，製造2個上述透光性導電膜1。再者，亦可對1個透光性導電膜1進行切斷加工，準備2個透光性導電膜1。 2個透光性導電膜1為第1透光性導電膜1A及第2透光性導電膜1B。 6-2.步驟(7) 步驟(7)係於步驟(6)之後實施。於步驟(7)中，於第1透光性導電膜1A中之無機層4之上表面(表面)上，例如藉由濕式而形成調光功能層5。 調光功能層5例如為電致變色層或液晶層等，較佳為液晶層。 於該步驟(7)中，例如，將包含液晶組合物之溶液塗佈於第1透光性導電膜1A中之無機層4之上表面。液晶組合物可列舉溶液中所包含之公知者，例如可列舉日本專利特開平8-194209號公報記載之液晶分散樹脂。 繼而，以第2透光性導電膜1B之無機層4與塗膜之表面接觸之方式將第2透光性導電膜1B積層於塗膜之表面。藉此，藉由2個透光性導電膜1、即第1透光性導電膜1A及第2透光性導電膜1B而夾持塗膜。 其後，對塗膜實施適當之處理(於液晶組合物包含紫外線硬化型組合物之情形時，紫外線照射)，形成調光功能層5。調光功能層5係形成於第1透光性導電膜1A之無機層4與第2透光性導電膜1B之無機層4之間。 藉此，獲得依序具備第1透光性導電膜1A、調光功能層5及第2透光性導電膜1B之調光膜20。 而且，調光膜20係於具備電源(未圖示)、控制裝置(未圖示)等之調光裝置(未圖示，例如調光窗等)中具備。於未圖示之調光裝置中，藉由電源對第1透光性導電膜1A中之透光性導電層3及第2透光性導電膜1B中之透光性導電層3施加電壓，藉此於該等之間產生電場。 而且，基於控制裝置而控制上述電場，藉此位於第1透光性導電膜1A與第2透光性導電膜1B之間之調光功能層5阻斷光，或者使光透過。 7.第1實施形態之作用效果 該透光性導電膜1由於具備無機層4，故而可穩定地保持親水性能。因此，透光性導電膜1之可靠性優異。 而且，該透光性導電膜1由於無機層4之厚度T4為上述上限以下，故而可迅速且確實地將透光性導電層3與無機層4一併蝕刻。因此，透光性導電膜1之圖案加工性優異。 又，由於形成無機層4後經過80小時以上後之無機層4之水接觸角θ1為上述上限以下，故而可藉由濕式於無機層4之表面形成均勻厚度之調光功能層5。因此，可獲得可靠性優異之調光膜20。 又，對於該透光性導電膜1而言，若無機層4係藉由濺鍍法而形成，即，若無機層4為濺鍍層，則無機層4均勻，且可具有上述厚度T4，又，耐擦傷性優異，與透光性基材2(具體而言，功能層7)之密接性變得良好。 又，對於該透光性導電膜1而言，若無機層4包含無機氧化物，則親水性尤其優異。 又，對於該透光性導電膜1而言，若第1無機氧化物層8之厚度T8及第2無機氧化物層10之厚度T10中至少1層的厚度為上述上限以下，則可迅速且確實地將透光性導電層3與無機層4一併蝕刻。 又，根據該方法，若於步驟(3)中，形成厚度T4為上述上限以下之無機層4，則於步驟(3)之後之步驟(4)中，可迅速且確實地將透光性導電層3與無機層4一併蝕刻。 又，由於形成無機層4後經過80小時以上後之無機層4之水接觸角θ1為上述上限以下，故而可藉由濕式於無機層4之表面形成均勻厚度之調光功能層5。 於該調光膜20中，由於調光功能層5與第1透光性導電膜1A所具備之無機層4、及第2透光性導電膜1B所具備之無機層4接觸，故而可具有均勻之厚度。而且，該調光膜20由於具備上述可靠性優異之透光性導電膜1，故而可靠性優異。 又，根據調光膜20之製造方法，於步驟(6)中，使無機層4與第1透光性導電膜1A之無機層4及第2透光性導電膜1B之無機層4接觸，故而可獲得具有均勻之厚度T5之調光功能層5。因此，該調光膜20之可靠性優異。 8.第1實施形態之變化例 進而，關於上述調光膜20之製造方法，於根據調光膜20之用途及目的，於步驟(2)中形成非晶質之透光性導電層3之情形時，亦可於步驟(4)之前後，包括使非晶質之透光性導電層3結晶化之步驟(5)，較佳為於步驟(4)之後，包括使非晶質之透光性導電層3結晶化之步驟(5)。 於步驟(2)中，形成非晶質之透光性導電層3。具體而言，分別形成非晶質之第1無機氧化物層8及非晶質之第2無機氧化物層10。 步驟(5)較佳為於步驟(4)之後實施。於步驟(5)中，使非晶質之第1無機氧化物層8及第2無機氧化物層10結晶化。 為了使透光性導電層3結晶化，例如，將經圖案化之透光性導電層3於大氣環境下，於例如80℃以上且150℃以下之溫度下，加熱(退火處理)例如30分鐘以上且90分鐘以下。 經結晶化之透光性導電層3之表面電阻例如為0.5 Ω/□以上，較佳為1 Ω/□以上，更佳為5 Ω/□以上，又，例如為50 Ω/□以下，較佳為20 Ω/□以下，更佳為15 Ω/□以下。 又，於第1實施形態中，於透光性基材2中具備功能層7，但例如可如圖3所示般不具備功能層7，而僅由基底基材6構成透光性基材2。即，如圖3所示，於此情形時，透光性基材2不具備功能層7，而僅包含基底基材6。 透光性導電層3(具體而言，第1無機氧化物層8)係以與基底基材6(透光性基材2)之上表面接觸之方式配置。 透光性導電層3係配置於基底基材6之上表面。具體而言，第1無機氧化物層8係配置於基底基材6之整個上表面。 又，如圖2所示，使2個透光性導電膜1、即第1透光性導電膜1A及第2透光性導電膜1B均分別具備特定之無機層4，但例如雖未圖示，但具體而言，亦可僅使第1透光性導電膜1A具備無機層4，使第2透光性導電膜1B不具備無機層4，而構成第2透光性導電膜1B。 於該變化例中，雖未圖示，但第2透光性導電膜1B依序具備透光性基材2及透光性導電層3。 又，如圖1所示，於第1實施形態之透光性導電膜1中，透光性導電層3依序具備第1無機氧化物層8、金屬層9及第2無機氧化物層10。但是，例如雖未圖示，但可於第2無機氧化物層10之上，進而依序配置第2金屬層及第3無機氧化物層。於此情形時，透過性導電層3依序具備第1無機氧化物層8、金屬層9、第2無機氧化物層10、第2金屬層及第3無機氧化物層。進而，可於第3無機氧化物層之上依序配置第3金屬層及第4無機氧化物層。於此情形時，透過性導電層3具備第1無機氧化物層8、金屬層9、第2無機氧化物層10、第2金屬層、第3無機氧化物層、第3金屬層及第4無機氧化物層。 於第2透光性導電膜1B中，透光性導電層3之表面、具體而言第2無機氧化物層10之表面露出。第2透光性導電膜1B之第2無機氧化物層10係與調光功能層5直接接觸。 又，於第1實施形態中，如圖1所示，將功能層7配置於基底基材6之上表面，但是雖未圖示，但亦可將功能層7配置於基底基材6之上表面及下表面之兩面。 根據上述各變化例，可發揮與第1實施形態相同之作用效果。 ＜第2實施形態＞ 於第2實施形態中，對與第1實施形態相同之構件及步驟標註同一參照符號，省略其詳細之說明。 1.透光性導電膜 透光性導電層3如圖1所示，具備第1無機氧化物層8、金屬層9及第2無機氧化物層10之3層，但如圖4所示，於第2實施形態中，僅具備第1無機氧化物層8之1層。透光性導電層3如圖4所示，不包含金屬層9，故而就獲得低比電阻之觀點而言，較佳為結晶質。 1-1.透光性導電層 透光性導電層3僅包含第1無機氧化物層8。 透光性導電層3之厚度T3係與第1無機氧化物層8之厚度T8相同，具體而言，例如為15 nm以上，較佳為20 nm以上，又，例如為300 nm以下，較佳為150 nm以下，更佳為50 nm以下，進而較佳為40 nm以下，尤佳為35 nm以下。 若透光性導電層3之厚度T3為上述上限以下，則於後續步驟中，可迅速且確實地將透光性導電層3與無機層4一併蝕刻。若透光性導電層3之厚度T3為上述下限以上，則即便於要求結晶質之情形時亦可確實地進行結晶化。 透光性導電層3較佳為結晶質。結晶質膜與非晶質膜相比，有親水性明確較差之情形，但本案之透光性導電膜1由於在透光性導電層3上配置親水性優異之無機層4，故而即便透光性導電層3為結晶質膜亦可較佳地使用。 透光性導電層3亦可為包含複數個無機氧化物層之積層體(參照圖4之符號13及14)之第1無機氧化物層8。較佳為第1無機氧化物層8包含組成不同之複數種(例如2種)銦錫複合氧化物(ITO)之積層體。具體而言，第1無機氧化物層8具備：第3銦錫複合氧化物層13，其係配置於透光性基材2之上表面；及第4銦錫複合氧化物層14，其係配置於第3銦錫複合氧化物層13之上表面。於第1無機氧化物層8中，配置於無機層4側之(面向無機層4)銦錫複合氧化物層(具體而言，第4銦錫複合氧化物層14)中之氧化錫含有率與構成第1無機氧化物層8之各銦錫複合氧化物層中之氧化錫含有率相比，較佳為最小，而並非最大。即，於第1無機氧化物層8中，較佳為隨著自下層向上層，氧化錫含有率變低。具體而言，於第1無機氧化物層8包含第3銦錫複合氧化物層13與第4銦錫複合氧化物層14之積層體之情形時，第4銦錫複合氧化物層14之氧化錫含有率與第3銦錫複合氧化物層13之氧化錫含有率相比較小，更具體而言，第4銦錫複合氧化物層14於第1無機氧化物層8中，具有最小之氧化錫含有率。 藉此，透光性導電層3即便於其上配置無機層4，亦可於短時間內成為結晶質ITO膜。 第4銦錫複合氧化物層14之氧化錫含有率例如為0.1質量%以上，較佳為0.5質量%以上，更佳為1質量%以上，進而較佳為3質量%以上，又，例如為8質量%以下，較佳為6質量%以下，更佳為5質量%以下。 另一方面，第4銦錫複合氧化物層14以外之層(具體而言，第3銦錫複合氧化物層13)之氧化錫含有率例如為5質量%以上，較佳為6質量%以上，更佳為9質量%以上，進而較佳為10質量%以上，又，例如為20質量%以下，較佳為15質量%以下，更佳為13質量%以下。 1-2.無機層 無機層4係配置於第1無機氧化物層8之上表面。 2.透光性導電膜之製造方法 透光性導電膜之製造方法除上述步驟(1)～步驟(4)以外，亦包括步驟(5)。 2-1.步驟(2) 於步驟(2)中，僅由非晶質之第1無機氧化物層8形成透光性導電層3。 2-2.步驟(5) 於步驟(4)之後實施步驟(5)。 於步驟(5)中，使經圖案化之包含非晶質之第1無機氧化物層8之透光性導電層3結晶化。 為了使透光性導電層3結晶化，例如將經圖案化之透光性導電層3於大氣環境下，於例如80℃以上且150℃以下之溫度下，加熱(退火處理)例如30分鐘以上且90分鐘以下。 經結晶化之透光性導電層3之表面電阻例如為30 Ω/□以上，較佳為60 Ω/□以上，又，例如為200 Ω/□以下，較佳為150 Ω/□以下，更佳為100 Ω/□以下，進而較佳為90 Ω/□以下。 3.第2實施形態之作用效果 第2實施形態可發揮與第1實施形態相同之作用效果。 進而，於步驟(3)之後之步驟(5)中，更具體而言，於步驟(4)之後之步驟(5)中，使包含非晶質之第1無機氧化物層8之透光性導電層3結晶化，故而可降低透光性導電層3之表面電阻。 4.第2實施形態之變化例 於第2實施形態中，於步驟(4)之後實施步驟(5)，但亦可於步驟(3)之後且步驟(4)之前實施步驟(5)。 即，於步驟(3)中，形成無機層4，繼而，於步驟(5)中，將透光性導電層3進行結晶化，其後，於步驟(4)中，蝕刻透光性導電層3。 於第2實施形態中，亦可繼步驟(2)之後實施步驟(5)。 例如，於步驟(2)中，形成非晶質之透光性導電層3，繼而，於步驟(5)中使非晶質之透光性導電層3進行結晶化，其後，於步驟(3)中，於結晶質之透光性導電層3上形成無機層4。 例如，亦可於步驟(2)中，形成非晶質之透光性導電層3，繼而，於步驟(5)中使非晶質之透光性導電層3進行結晶化，其後，於步驟(3)中，於結晶質之透光性導電層3上形成無機層4，進而，於步驟(4)中，蝕刻結晶質之透光性導電層3。 又，雖實用性較差，但例如亦可於步驟(2)中，形成非晶質之透光性導電層，繼而，於步驟(5)中使非晶質之透光性導電層進行結晶化，其後，於步驟(4)中，蝕刻結晶質之透光性導電層，進而於步驟(3)中，於結晶質之透光性導電層上形成無機層。 於第2實施形態中，於透光性基材2中具備功能層7，但例如亦可如圖6所示般不具備功能層7，而僅由基底基材6構成透光性基材2。即，如圖6所示，於此情形時，透光性基材2不具備功能層7，而僅包含基底基材6。 透光性導電層3(具體而言，第1無機氧化物層8)係以與基底基材6(透光性基材2)之上表面接觸之方式配置。 藉由該等變化例，亦可發揮與第2實施形態相同之作用效果。 又，亦可適當組合上述第1實施形態、第2實施形態及該等之變化例。 [實施例] 以下，使用實施例詳細地對本發明進行說明，但本發明只要不超過其主旨，則並不限定於實施例，可基於本發明之技術思想進行各種變化及變更。 以下示出實施例及比較例，更具體地說明本發明。再者，本發明絲毫不限定於實施例及比較例。又，以下之記載中所使用之調配比率(含有比率)、物性值、參數等具體數值可代替為上述「實施方式」中所記載之與該等對應之調配比率(含有比率)、物性值、參數等對應記載的上限(定義為「以下」、「未達」之數值)或下限(定義為「以上」、「超過」之數值)。 實施例1 步驟(1)：透光性基材之製作 準備厚度50 μm之包含聚對苯二甲酸乙二酯(PET)膜(三菱樹脂製造)之基底基材6，繼而，於基底基材6之表面(形成透光性導電層3之側之主面)上塗佈包含丙烯酸系樹脂之紫外線硬化性樹脂，藉由紫外線照射使其硬化，形成厚度為2 μm之硬塗層7'。藉此，製作依序具備基底基材6及硬塗層7'之透光性基材2。 步驟(2)：透光性導電層之製作 繼而，於透光性基材2之硬塗層7'之上形成包含依序具備第1無機氧化物層8、金屬層9、第2無機氧化物層10之積層體之透光性導電層3。 第1無機氧化物層8及第2無機氧化物層10均為包含銦錫氧化物之銦錫氧化物層。具體而言，第1無機氧化物層8及第2無機氧化物層10均為藉由將包含12質量%之氧化錫與88質量%之氧化銦之燒結體之ITO靶(三井金屬礦山公司製造)於導入有成膜氣體(包含Ar及O₂ (流量比Ar：O₂ ＝100：3)之混合氣體)之真空環境下進行濺鍍而形成的厚度40 nm之銦錫導電性氧化物。 又，金屬層9包含Ag-Pd合金。具體而言，金屬層9係藉由將包含混合Ag 99質量%與Pd 1質量%而成之合金之銀合金靶於導入有成膜氣體(Ar)之真空環境下進行濺鍍而形成的厚度8 nm之銀合金層。 步驟(3)：無機層之製作 繼而，於透光性導電層3之第2無機氧化物層10之上形成包含氧化矽(SiO₂ )之厚度0.5 nm之無機層4。無機層4係藉由將包含純度99.99%以上之Si板之Si靶(大同特殊鋼公司製造)於導入有成膜氣體(包含Ar及O₂ (流量比Ar：O₂ ＝100：41)之混合氣體)之真空環境下進行濺鍍而形成。 藉此，製造依序具備透光性導電層3、無機層4及調光功能層5之透光性導電膜1。 實施例2～8 如表1所記載般，變更無機層4之厚度及製造方法，除此以外，以與實施例1相同之方式進行處理，製造透光性導電膜1。 比較例1 如表1所記載般，不形成無機層4，除此以外，以與實施例1相同之方式進行處理，製造透光性導電膜1。 實施例9 於步驟(2)中，將作為成膜氣體之Ar及O₂ 之流量比設為Ar：O₂ ＝100：1，僅由第1無機氧化物層8製作透光性導電層3，除此以外，根據表1，以與實施例1相同之方式進行處理，製造透光性導電膜1。 再者，第1無機氧化物層8係由氧化錫含有率10質量%之第3銦錫複合氧化物層13、與氧化錫含有率3質量%之第4銦錫複合氧化物層14之積層體而形成。 實施例10 於步驟(3)中，藉由真空蒸鍍法(電子束加熱方式)，由厚度0.5 nm之SiO₂ 層形成無機層4，除此以外，以與實施例1相同之方式進行處理，製造透光性導電膜1。 評價 評價以下之項目，將其結果示於表1。 (1)水接觸角 實施例1～10之無機層4之水接觸角(θ0、θ1)係於針尖形成直徑1.5 mm之水滴，使其與無機層4之表面接觸，將水滴移至無機層4上，藉由接觸角計(協和界面科學公司製造，CA-X型)而測定水滴與無機層4之靜止接觸角。於5處進行測定，於最大角度與最小角度之差為5.0度以下之情形時，判斷為可準確地進行測定，使用水接觸角之簡單平均值判斷潤濕性。於水接觸角超過5.0度之情形時，無法進行準確之測定，而且假定調光功能層5之部分收縮，故而不論數值如何，潤濕性均視為「較低」。 再者，關於水接觸角θ1，對形成無機層4後，於25℃、相對濕度40%之環境下放置80小時之無機層4之水接觸角進行測定。 又，關於比較例1，由於不具有無機層4，故而以與上述相同之方式測定透光性導電層3之水接觸角。 再者，實施例10之透光性導電膜1雖水接觸角為50度以下，但因測定位置而水接觸角之數值有偏差，難以測定真值。 (2)厚度 使用膜厚計(尾崎製作所(Peacock(註冊商標))公司製造，裝置名「數位度盤規DG-205」)測定基底基材6之厚度。 藉由使用穿透式電子顯微鏡(日立製作所製造，裝置名「HF-2000」)之剖面觀察而測定硬塗層7、第1無機氧化物層8、金屬層9及第2無機氧化物層10之厚度。 使用螢光X射線分析裝置(Rigaku公司製造，裝置名「ZSX Primus II」)測定無機層4之厚度(無機層之厚度係減去來自透光性基材之SiKa強度而求出)。 再者，於進行螢光X射線分析時，以如下方式事先準備。 即，製作於厚度50 μm之PET基材上形成有目標厚度100 nm、150 nm、200 nm之氧化矽(SiO₂ )層之檢體，藉由各螢光X射線分析裝置測定各檢體之SiKa之強度(減去來自PET基材之SiKa強度所獲得之數值)，又，藉由穿透式電子顯微鏡求出各檢體之氧化矽層之實際膜厚。根據如此求出之SiKa之強度值及實際膜厚，製作校準曲線，根據SiKa之強度求出無機層4之厚度。 (3)蝕刻時間及蝕刻性 製作20片經切割為5 cm見方之大小之透光性導電膜1，浸漬於經加熱至40℃之蝕刻液(ADEKA公司製造，製品名「Adeka Chelumica SET-500」)中。其後，浸漬時間每15秒取出1片，進行水清洗及水之擦拭(使其乾燥)、透光性導電膜1之外觀確認及任意3處之2端子間電阻測定。再者，2端子間電阻測定係藉由測試機而實施，進行測定時之端子間距離係設為1.5 cm。而且，於蝕刻時間之評價中，於目測無法於5 cm見方之透光性導電膜1內確認到來自透光性導電層3或無機層4之殘差，且任意3處之2端子間電阻均超過60 MΩ之時間點，判斷為完成蝕刻。 蝕刻性係藉由以下之基準進行評價。 ◎：蝕刻時間未達60秒。 ○：蝕刻時間為60秒以上且為180秒以下。 △：蝕刻時間超過180秒且為300秒以下。 ×：蝕刻時間超過300秒。 (4)透光性導電層之表面電阻值 依據JIS K 7194(1994年)使用四端子法測定透光性導電層3之表面電阻值。 (5)結晶性 於140℃下對實施例9中之透光性導電層3進行加熱處理，評價透光性導電層3之結晶性。具體而言，將各例之透光性導電性膜浸漬於鹽酸(濃度：5質量%)中15分鐘後，進行水洗、乾燥，測定15 mm左右之間之端子間電阻，根據下述基準，評價結晶化速度。 ○：15 mm間之端子間電阻為10 kΩ以下。 ×：15 mm間之端子間電阻超過10 kΩ。 關於比較例1，亦以與實施例9相同之方式評價結晶化速度。 (6)收縮性 將於水100 mL中溶解氯化鈉5 mg而成之水溶液滴加於各實施例及比較例之透光性導電層3之上，或者於不存在透光性導電層3之情形時滴加於透光性基材2之上，根據下述基準，目測評價收縮性。 ○：未觀察到收縮。 △：觀察到較小之收縮，但整體而言水溶液充分地適應透光性導電層3或透光性基材2。 ×：觀察到收縮。 (7)剝離 觀察實施例1～10之無機層，如下所述般評價剝離性。 ○：未於無機層4中散見剝離部位。 △：於無機層4中散見剝離部位。 [表1]

再者，上述發明係以本發明之例示之實施形態之形式提供，但其僅為例示，不應限定性地進行解釋。該技術領域之業者知曉之本發明之變化例包含於下述申請專利範圍中。 [產業上之可利用性] 本發明之透光性導電膜例如係於調光膜中具備。In Figure 1, the up and down direction on the paper is the up and down direction (thickness direction, the first direction), the upper side of the paper is the upper side (one side in the thickness direction, the first direction side), and the lower side of the paper is the lower side (the other side in the thickness direction, The other side in the first direction). In Figure 1, the left-right direction of the paper is the left-right direction (width direction, the second direction orthogonal to the first direction), the left side of the paper is the left side (one side in the second direction), and the right side of the paper is the right side (the other side in the second direction) ). In Figure 1, the paper thickness direction is the front and rear direction (the third direction orthogonal to the first direction and the second direction), the front side of the paper is the front side (the third direction side), and the back side of the paper is the back side (the third direction). The other side). Specifically, according to the direction arrows in each figure. <First Embodiment> 1. Light-transmitting conductive film The light-transmitting conductive film 1 as shown in FIG. 1 has a film shape (including a sheet shape) with a specific thickness, and runs in a specific direction (front and back) orthogonal to the thickness direction. It extends in the direction and the left-right direction, that is, the plane direction, and has a flat upper surface and a flat lower surface (two main surfaces). The light-transmitting conductive film 1 is, for example, a component such as the light-adjusting film 20 (described below, refer to FIG. 2), that is, it is not a light-adjusting device (described below). That is, the light-transmitting conductive film 1 is used to make parts such as the light-adjusting film 20, and does not include the light-adjusting functional layer 5 (described below, refer to the dashed line in FIG. 1 and the solid line in FIG. 2). The way parts are circulated is a device that can be used in the industry. Specifically, the translucent conductive film 1 includes a translucent base 2, a translucent conductive layer 3, and an inorganic layer 4 in this order. That is, the light-transmitting conductive film 1 includes: a light-transmitting substrate 2; a light-transmitting conductive layer 3, which is arranged on the upper surface of the light-transmitting substrate 2, and an inorganic layer 4, which is arranged on the light-transmitting substrate 2. The upper surface of the conductive layer 3. Moreover, it is preferable that the light-transmitting conductive layer 3 and the inorganic layer 4 are in contact with each other. It is more preferable that the light-transmitting conductive film 1 includes only the light-transmitting base 2, the light-transmitting conductive layer 3, and the inorganic layer 4. Hereinafter, each layer will be described in detail. 2. Light-transmitting substrate The light-transmitting substrate 2 is the lowermost layer of the light-transmitting conductive film 1, and is a supporting material for ensuring the mechanical strength of the light-transmitting conductive film 1. The translucent substrate 2 includes a base substrate 6. In addition, the translucent substrate 2 further includes a functional layer 7 arranged on one main surface (upper surface) of the base substrate 6. That is, the translucent substrate 2 includes a base substrate 6 and a functional layer 7 in this order. 2-1. Base substrate The base substrate 6 is a layer forming the lower surface of the light-transmitting substrate 2 and has a film shape (including a sheet shape). The base substrate 6 includes, for example, an organic film, and an inorganic plate such as a glass plate. From the viewpoint of efficiently manufacturing the light-transmitting conductive film 1 by a continuous manufacturing method such as roll-to-roll, the base substrate 6 preferably includes an organic film, and more preferably includes a polymer film. The polymer film has light transmittance. As the material of the polymer film, for example, polyester resins such as polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate, etc.; for example, polymethacrylate (Meth)acrylic resins (acrylic resins and/or methacrylic resins); for example, olefin resins such as polyethylene, polypropylene, and cycloolefin polymers; Ester resin, melamine resin, polyamide resin, polyimide resin, cellulose resin, polystyrene resin,

Olefin resin and so on. These polymer films can be used alone or in combination of two or more kinds. From the viewpoints of light transmittance, heat resistance, mechanical properties, etc., a polyester resin is preferable, and PET is more preferable. The thickness of the base substrate 6 is, for example, 2 μm or more, preferably 20 μm or more, more preferably 40 μm or more, and, for example, 300 μm or less, preferably 200 μm or less. 2-2. Functional layer The functional layer 7 is a layer that is provided on one main surface (upper surface) of the base substrate 6 and is provided with functionality corresponding to the purpose. As the functional layer 7, for example, an easy-adhesive layer, an undercoat layer, a hard coat layer, and the like can be cited. The easy-adhesion layer has a function of improving the adhesion with the layer formed on the base substrate 6 (for example, the translucent conductive layer 3). The undercoat layer has the function of adjusting the reflectance or optical hue of the translucent conductive film 1. The hard coat layer improves the scratch resistance of the translucent conductive film 1. The functional layer 7 preferably contains a resin composition, and more preferably contains only the resin composition. The resin composition contains resin and particles, for example. The resin composition preferably contains only resin, and more preferably contains only resin. Examples of the resin include curable resins, thermoplastic resins (for example, polyolefin resins), and the like. Preferably, curable resins are used. Examples of curable resins include active energy ray curable resins that are cured by irradiation with active energy rays (specifically, ultraviolet rays, electron beams, etc.); for example, thermosetting resins that are cured by heating. Preferably, active energy ray-curable resin is mentioned. Examples of the active energy ray-curable resin include polymers containing a functional group having a polymerizable carbon-carbon double bond in the molecule. As such a functional group, a vinyl group, a (meth)acryloyl group (methacryloyl group and/or an acryloyl group) etc. are mentioned, for example. Examples of active energy ray-curable resins include (meth)acrylic resins (acrylic resins and/or methacrylic resins) having functional groups in the side chains. The curable resin can be used singly or in combination of two or more kinds. The thickness of the functional layer 7 is, for example, 0.01 μm or more, preferably 0.1 μm or more, more preferably 1 μm or more, and, for example, 10 μm or less, preferably 5 μm or less. The thickness of the translucent substrate 2, that is, the total thickness of the thickness of the base substrate 6 and the thickness of the functional layer 7 is, for example, 5 μm or more, preferably 20 μm or more, more preferably 45 μm or more, and, for example, 300 μm or less, preferably 200 μm or less. 3. Translucent conductive layer The translucent conductive layer 3 is a conductive layer that can be arbitrarily patterned by etching in a subsequent step. The light-transmitting conductive layer 3 has a film shape (including a sheet shape), and is arranged on the entire upper surface of the light-transmitting substrate 2 so as to be in contact with the upper surface of the light-transmitting substrate 2. The translucent conductive layer 3 includes a first inorganic oxide layer 8, a metal layer 9, and a second inorganic oxide layer 10 in this order. That is, the translucent conductive layer 3 includes: a first inorganic oxide layer 8 which is arranged on the translucent base 2; a metal layer 9 which is arranged on the first inorganic oxide layer 8; and The second inorganic oxide layer 10 is arranged on the metal layer 9. In addition, the translucent conductive layer 3 preferably includes only the first inorganic oxide layer 8, the metal layer 9, and the second inorganic oxide layer 10. The first inorganic oxide layer 8 and the second inorganic oxide layer 10 are preferably amorphous. 3-1. First inorganic oxide layer The first inorganic oxide layer 8 is a conductive layer that imparts conductivity to the translucent conductive layer 3 together with the metal layer 9 and the second inorganic oxide layer 10. The first inorganic oxide layer 8 may not maintain conductivity, but preferably has conductivity. In addition, the first inorganic oxide layer 8 is also a barrier layer for preventing the active gas from the organic substance contained in the light-transmitting base material 2 from oozing into the metal layer 9. The first inorganic oxide layer 8 is the lowermost layer in the light-transmitting conductive layer 3, and has a film shape (including a sheet shape), and is arranged on the light-transmitting base in contact with the upper surface of the light-transmitting substrate 2. The entire upper surface of material 2. The first inorganic oxide layer 8 contains the following inorganic oxide soluble in the etching solution as a main component. Examples of inorganic oxides include at least one metal selected from the group consisting of In, Sn, Zn, Ga, Sb, Ti, Si, Zr, Mg, Al, Au, Ag, Cu, Pd, and W Formed metal oxides, etc. In the metal oxide, the metal atoms shown in the above group can be further doped if necessary. As the inorganic oxide, from the viewpoint of reducing the specific resistance and ensuring excellent light transmittance, preferably, indium oxide (including indium-based conductive oxide) is used, and more preferably, indium tin composite oxide ( ITO). That is, the first inorganic oxide layer 8 is preferably an indium-based conductive oxide layer, and more preferably an ITO layer. _{The content ratio of tin oxide (SnO 2} ) in indium tin composite oxide (ITO) to the total mass of indium oxide (In ₂ O ₃ ) and tin oxide (SnO _{2 ) (SnO 2} /(SnO ₂ ＋In ₂ O ₃₎ ) Is, for example, 6 mass% or more, preferably 8 mass% or more, more preferably 10 mass% or more, still more preferably 12 mass% or more, and, for example, 30 mass% or less, preferably 20 mass% or less, More preferably, it is 17% by mass or less. If _{the mass ratio of tin oxide (SnO 2} ) is less than the above lower limit, the crystallinity of the first inorganic oxide layer 8 changes with time, and it may become difficult to control the etching properties. If the mass ratio of tin oxide (SnO ₂ ) exceeds the above upper limit, the humidification reliability may decrease. For example, the first inorganic oxide layer 8 may be either crystalline or amorphous. It is easy to follow in the subsequent steps From the viewpoint of patterning, the first inorganic oxide layer 8 is preferably amorphous. The thickness T8 of the first inorganic oxide layer 8 is, for example, 5 nm or more, preferably 20 nm or more, more preferably 30 nm Above, for example, it is 100 nm or less, preferably 60 nm or less, and more preferably 50 nm or less. If the thickness T8 of the first inorganic oxide layer 8 is less than the above upper limit, the subsequent steps can be quickly and reliably Ground-etching the light-transmitting conductive layer 3, if the thickness T8 of the first inorganic oxide layer 8 is more than the above lower limit, it can function as a barrier layer. 3-2. Metal layer The metal layer 9 and the first inorganic oxide layer 8 and the second inorganic oxide layer 10 are a conductive layer that imparts conductivity to the light-transmitting conductive layer 3. In addition, the metal layer 9 is also a low specific resistance layer that reduces the specific resistance of the light-transmitting conductive layer 3. Metal. The layer 9 has a film shape (including a sheet shape), and is arranged on the upper surface of the first inorganic oxide layer 8 so as to be in contact with the upper surface of the first inorganic oxide layer 8. The metal forming the metal layer 9 is, for example, A metal with low electrical resistance and a metal that can be dissolved in the same etching solution as the etching solution used to etch the first inorganic oxide layer 8. The metal is not particularly limited. For example, it may be selected from Ti, Si, and Nb. , In, Zn, Sn, Au, Ag, Cu, Al, Co, Cr, Ni, Pb, Pd, Pt, Cu, Ge, Ru, Nd, Mg, Ca, Na, W, Zr, Ta and Hf One type of metal in the group, or an alloy containing two or more types of metals. As the metal, silver (Ag) and silver alloys are preferable, and silver alloys are more preferable. Silver alloys contain silver as a main component and contain The composition of other metals as secondary components is not limited. Examples of the composition of silver alloys include: Ag-Pd alloys, Ag-Pd-Cu alloys, Ag-Pd-Cu-Ge alloys, Ag-Cu-Au alloys, Ag-Cu alloy, Ag-Cu-Sn alloy, Ag-Ru-Cu alloy, Ag-Ru-Au alloy, Ag-Pd alloy, Ag-Nd alloy, Ag-Mg alloy Gold, Ag-Ca alloy, Ag-Na alloy, etc. As a silver alloy, Ag-Pd alloy is mentioned preferably. The content of silver in the silver alloy (preferably Ag-Pd alloy) is, for example, 80% by mass or more, preferably 85% by mass or more, more preferably 90% by mass or more, and still more preferably 95.0% by mass or more, and , For example, 99.9% by mass or less. The content ratio of other metals in the silver alloy is the remainder of the above-mentioned silver content ratio. When the metal is an Ag-Pd alloy, the content ratio of Pd in the Ag-Pd alloy is specifically, for example, 0.1% by mass or more, and, for example, 10% by mass or less, preferably 5% by mass or less , More preferably 1.0% by mass or less. From the viewpoint of increasing the transmittance of the light-transmitting conductive layer 3, the thickness of the metal layer 9 is, for example, 1 nm or more, preferably 5 nm or more, for example, 30 nm or less, preferably 20 nm or less, and more It is preferably 10 nm or less. 3-3. Second Inorganic Oxide Layer The second inorganic oxide layer 10 is a conductive layer that imparts conductivity to the translucent conductive layer 3 together with the first inorganic oxide layer 8 and the metal layer 9. The second inorganic oxide layer 10 may not maintain conductivity, but preferably has conductivity. In addition, the second inorganic oxide layer 10 is also a barrier layer that prevents the metal layer 9 from being attacked _{by oxygen, water vapor, or sulfur oxide (SO x) that is often present in the atmosphere.} The second inorganic oxide layer 10 is the uppermost layer of the light-transmitting conductive layer 3, and has a film shape (including a sheet shape), and is arranged on the entire upper surface of the metal layer 9 in contact with the upper surface of the metal layer 9 . The second inorganic oxide layer 10 contains the inorganic oxide exemplified in the first inorganic oxide layer 8. Specifically, it is an inorganic oxide that can be dissolved in the same etching solution as the etching solution used to etch the first inorganic oxide layer 8. The oxide preferably contains indium oxide, and more preferably contains ITO. That is, the second inorganic oxide layer 10 is preferably an indium-based conductive oxide layer, and more preferably an ITO layer. _{The content ratio of tin oxide (SnO 2} ) in indium tin composite oxide (ITO) to the total mass of indium oxide (In ₂ O ₃ ) and tin oxide (SnO _{2 ) (SnO 2} /(SnO ₂ ＋In ₂ O ₃₎ ) Is, for example, 6 mass% or more, preferably 8 mass% or more, more preferably 10 mass% or more, still more preferably 12 mass% or more, and, for example, 30 mass% or less, preferably 20 mass% or less, More preferably, it is 17% by mass or less. If _{the content ratio of tin oxide (SnO 2} ) is less than the above lower limit, the crystallinity of the second inorganic oxide layer 10 may change with time and it may become difficult to control the etching properties. If the content ratio of tin oxide (SnO ₂ ) exceeds the above upper limit, the humidification reliability may be reduced. The second inorganic oxide layer 10 may be either crystalline or amorphous, for example. It is easy to follow in subsequent steps From the viewpoint of patterning, the second inorganic oxide layer 10 is preferably amorphous. From the viewpoint of obtaining a good pattern profile during etching, the first inorganic oxide layer 8 and the second inorganic oxide layer 10 are preferably all of the same film quality, more preferably all are amorphous. The thickness T10 of the second inorganic oxide layer 10 is, for example, 5 nm or more, preferably 20 nm or more, and more preferably 30 nm or more, Also, for example, it is 100 nm or less, preferably 60 nm or less, and more preferably 50 nm or less. If the thickness T10 of the second inorganic oxide layer 10 is less than the above upper limit, it can be etched quickly and surely in the subsequent steps The translucent conductive layer 3 can function as a barrier layer if the thickness T10 of the second inorganic oxide layer 10 is greater than or equal to the above lower limit. Also, the thickness T8 of the first inorganic oxide layer 8 and the second inorganic oxide layer The thickness of at least one layer in the thickness T10 of 10 is, for example, 80 nm or less, preferably 50 nm or less. Preferably, it is both the thickness T8 of the first inorganic oxide layer 8 and the thickness T10 of the second inorganic oxide layer 10 All are, for example, 50 nm or less. If the thickness T8 of the first inorganic oxide layer 8 and/or the thickness T10 of the second inorganic oxide layer 10 is less than the above upper limit, in the subsequent steps, the etching can be quickly and reliably transmitted to light性conductive layer 3. Furthermore, the thickness of the translucent conductive layer 3, that is, the total thickness of the first inorganic oxide layer 8, the metal layer 9, and the second inorganic oxide layer 10, is preferably 20 nm or more, more preferably 40 nm or more, and, for example, 230 nm or less, preferably 120 nm or less, more preferably 100 nm or less. 4. Inorganic layer The inorganic layer 4 is the uppermost layer of the light-transmitting conductive film 1, and has a film shape (including sheet The inorganic layer 4 is arranged on the entire upper surface of the second inorganic oxide layer 10 so as to be in contact with the upper surface of the second inorganic oxide layer 10. The inorganic layer 4 is opposed to the transparent conductive layer 3 (specifically, In other words, the upper surface (surface) of the second inorganic oxide layer 10) imparts a hydrophilic layer with hydrophilicity. In addition, the inorganic layer 4 will be described below, because it is preferably It is formed by a sputtering method, so it is a sputtered layer. The inorganic layer 4 contains, for example, a hydrophilic material. The hydrophilic material is not limited, and includes, for example, a hydrophilic material. Examples of the hydrophilic material include inorganic oxides such as silica, titanium oxide (specifically, TiO ₂ ), and alumina (specifically, Al ₂ O ₃ ); for example, metal salts such as zeolite. As the hydrophilic material, an inorganic oxide is preferable, and silicon oxide is more preferable. Silicon oxide is specifically _{represented by SiO x} , and x is, for example, 1.0 or more, preferably 1.5 or more, and, for example, 2.0 or less. Specifically, as silicon oxide, for example, SiO, SiO ₂ (silicon dioxide), etc. are mentioned, preferably SiO _{2 is} mentioned. The thickness T4 of the inorganic layer 4 is 20 nm or less, preferably 10 nm or less, more preferably less than 10 nm, still more preferably 5.0 nm or less, particularly preferably less than 5.0 nm, most preferably 4.5 nm or less, and further It is 3.0 nm or less, and, for example, 0.01 nm or more, preferably 0.1 nm or more, more preferably 0.5 nm or more, and still more preferably 1.0 nm or more. If the thickness T4 of the inorganic layer 4 exceeds the above upper limit, the translucent conductive layer 3 cannot be etched quickly and surely. Furthermore, if the thickness T4 of the inorganic layer 4 exceeds the above upper limit, although the water contact angle θ0 of the inorganic layer 4 immediately after the formation of the inorganic layer 4 described below can be set to be low, the ratio of the following water contact angle (θ1/ θ0) becomes higher (specifically, 4.0 or more). Therefore, the water contact angle θ1 of the inorganic layer 4 becomes higher after 80 hours or more after the formation of the inorganic layer 4. Therefore, the water contact angle θ1 of the inorganic layer 4 may vary after 80 hours or more after the formation of the inorganic layer 4. On the other hand, if the thickness T4 of the inorganic layer 4 is more than the above lower limit, excellent wettability can be obtained. In addition, the ratio of the thickness T4 of the inorganic layer 4 to the thickness T10 of the second inorganic oxide layer 10 (thickness T4 of the inorganic layer 4/thickness T10 of the second inorganic oxide layer 10) is, for example, 0.01 or more, preferably 0.02 Above, for example, it is 0.50 or less, preferably 0.25 or less, more preferably 0.15 or less, and still more preferably 0.10 or less. If the ratio of the above thickness is not less than the above lower limit, excellent wettability can be obtained. If the ratio of the above-mentioned thickness exceeds the above-mentioned upper limit, the translucent conductive layer 3 cannot be etched quickly and surely. If the ratio of the above-mentioned thickness exceeds the above-mentioned lower limit, the water contact angle θ1 of the inorganic layer 4 may vary after 80 hours or more after the formation of the inorganic layer 4. Moreover, the water contact angle θ1 of the inorganic layer 4 (described below, the water contact angle θ1 after 80 hours or more after the formation of the inorganic layer 4) is 50 degrees or less, preferably 40 degrees or less, more preferably 30 degrees or less, It is more preferably 20 degrees or less, more preferably less than 20 degrees, most preferably 10 degrees or less, and, for example, 0 degrees or more, preferably 1 degree or more, and more preferably 5 degrees or more. The water contact angle θ1 of the inorganic layer 4 is based on the formation of the inorganic layer 4, according to JIS R1753:2013 for normal temperature (specifically, 20-40°C) and normal humidity (specifically, relative humidity of 30% or more and 70% or less) The inorganic layer 4 was placed in the environment for more than 80 hours for measurement. A more specific method for measuring the water contact angle θ1 is described in the subsequent examples. If the water contact angle θ1 of the inorganic layer 4 after more than 80 hours after the formation of the inorganic layer 4 exceeds the above upper limit, it is impossible to form a light-adjusting functional layer 5 of uniform thickness on the surface of the inorganic layer 4 by wet method (described below) . 5. Manufacturing method of translucent conductive film Next, the method of manufacturing the translucent conductive film 1 is demonstrated. The method includes: step (1), which prepares a translucent substrate 2; step (2), which is to form a translucent conductive layer 3 on the surface of the translucent substrate 2; and step (3), which The inorganic layer 4 is formed on the surface of the translucent conductive layer 3. Hereinafter, each step is described in detail. 5-1. Step (1) In step (1), the base substrate 6 is first prepared. Then, the functional layer 7 is arranged on the upper surface of the base substrate 6. For example, the functional layer 7 is configured by a wet type. Specifically, first, the resin composition is applied to the upper surface of the base substrate 6. After that, when the resin composition contains an active energy ray curable resin, the active energy ray is irradiated. Thereby, a functional layer 7 in a film shape is formed on the entire upper surface of the translucent base 2. That is, the translucent substrate 2 provided with the base substrate 6 and the functional layer 7 is produced. 5-2. Step (2) In step (2), after step (1), the translucent conductive layer 3 is disposed (laminated) on the upper surface of the functional layer 7 by, for example, dry type. Specifically, each of the first inorganic oxide layer 8, the metal layer 9, and the second inorganic oxide layer 10 is sequentially arranged by a dry method. Examples of the dry method include a vacuum vapor deposition method, a sputtering method, an ion plating method, and the like. Preferably, the sputtering method can be cited. Examples of the gas used in the sputtering method include inert gases such as Ar. In addition, a reactive gas such as oxygen may be used in combination as necessary. When a reactive gas is used in combination, the ratio of the flow rate of the reactive gas to the flow rate of the inert gas (the flow rate of the reactive gas/the flow rate of the inert gas) is, for example, 0.1/100 or more, preferably 0.5/100 or more, and , For example, 10/100 or less, preferably 5/100 or less. Specifically, in the formation of each of the first inorganic oxide layer 8 and the second inorganic oxide layer 10, it is preferable to use an inert gas and a reactive gas together as a gas. On the other hand, in the formation of the metal layer 9, it is preferable to use an inert gas alone as the gas. In the formation of the second inorganic oxide layer 10, it is preferable to use an inert gas and a reactive gas together as a gas. It is preferable to form the translucent conductive layer 3 in an amorphous form. Specifically, an amorphous first inorganic oxide layer 8 and an amorphous second inorganic oxide layer 10 are formed. As a result, the transparent conductive layer 3 in which the first inorganic oxide layer 8, the metal layer 9, and the second inorganic oxide layer 10 are sequentially formed on the transparent substrate 2 is formed. The surface resistance of the transparent conductive layer 3 (specifically, the surface resistance of the amorphous transparent conductive layer 3) is, for example, 1 Ω/□ or more, preferably 3 Ω/□ or more, more preferably 8 Ω /□ or more, for example, 100 Ω/□ or less, preferably 50 Ω/□ or less, and more preferably 30 Ω/□ or less. 5-3. Step (3) In step (3), after step (2), the inorganic layer 4 is arranged (laminated) on the upper surface of the second inorganic oxide layer 10, for example, by dry method. Examples of the dry method include a vacuum vapor deposition method, a sputtering method, an ion plating method, and the like. From the viewpoint of uniformly forming the inorganic layer 4 with the above-mentioned thickness T4, a sputtering method is preferable. On the other hand, if it is a vacuum evaporation method, the deviation of the thickness T4 of the inorganic layer 4 may increase, and the wettability of the inorganic layer 4 may decrease. Furthermore, the inorganic layer 4 is self-transmitting from the light-transmitting conductive layer 3. The case of peeling. Examples of the gas used in the sputtering method include inert gases such as Ar. In addition, a reactive gas such as oxygen may be used in combination as necessary. When a reactive gas is used in combination, the ratio of the flow rate of the reactive gas to the flow rate of the inert gas (the flow rate of the reactive gas/the flow rate of the inert gas) is, for example, 1/100 or more, preferably 10/100 or more, more It is preferably 20/100 or more, and, for example, 90/100 or less, and more preferably 50/100 or less. Immediately after the formation of the inorganic layer 4 (specifically, within 500 minutes after the formation of the inorganic layer 4), the water contact angle θ0 of the inorganic layer 4 is 50 degrees or less, preferably 40 degrees or less, more preferably 20 degrees or less, and more It is preferably 10 degrees or less, and, for example, 0 degrees or more, preferably 5 degrees or more, more preferably more than 6 degrees, and even more preferably 7 degrees or more. On the other hand, the water contact angle θ1 of the inorganic layer 4 after 80 hours or more has passed after the formation of the inorganic layer 4 changes with respect to the water contact angle θ0 immediately after the formation of the inorganic layer 4. Specifically, the ratio (θ1/θ0) of the water contact angle θ1 after 80 hours or more after the formation of the inorganic layer 4 to the water contact angle θ0 immediately after the formation of the inorganic layer 4 is, for example, 0.3 or more, preferably 0.5 or more. It is more preferably 1.0 or more, still more preferably 2.0 or more, and, for example, less than 4.5, preferably 4.0 or less, more preferably 3.5 or less, still more preferably 3.0 or less, and particularly preferably less than 3.0. If the above ratio is equal to or less than the above upper limit, it is possible to suppress variation in the water contact angle θ1 of the inorganic layer 4 after 80 hours or more have passed after the formation of the inorganic layer 4. Thereby, the light-transmitting conductive film 1 provided with the light-transmitting base material 2, the light-transmitting conductive layer 3, and the inorganic layer 4 in this order is obtained. The total thickness of the translucent conductive film 1 is, for example, 2 μm or more, preferably 20 μm or more, and for example, 300 μm or less, preferably 200 μm or less, and more preferably 150 μm or less. The light-transmitting conductive film 1 is an industrially available device. 5-4. Step (4) The manufacturing method of the light-transmitting conductive film 1 further includes the step (4) of etching the light-transmitting conductive layer 3 after the step (3). In step (4), after step (3), the transparent conductive layer 3 is etched. Specifically, the transparent conductive layer 3 and the inorganic layer 4 are etched together, and the transparent conductive layer 3 and the inorganic layer 4 are patterned into a specific shape. The etching solution is not particularly limited as long as it is a solution that can dissolve the light-transmitting conductive layer 3, and examples thereof include nitric acid, phosphoric acid, acetic acid, hydrochloric acid, sulfuric acid, oxalic acid, and mixtures of these. The etching time is, for example, 5 minutes or less, preferably 4 minutes or less, more preferably 3 minutes or less, and, for example, 0.05 minutes or more, preferably 0.1 minutes or more, and more preferably 0.5 minutes or more. If the etching time is less than or equal to the above upper limit, the manufacturing method of the light-transmitting conductive film 1 can be implemented by a roll-to-roll method with excellent production efficiency. Thereby, a light-transmitting conductive film 1 including a light-transmitting base material 2, a patterned light-transmitting conductive layer 3, and a patterned inorganic layer 4 in this order is obtained. Furthermore, the above-mentioned manufacturing method is implemented by a roll-to-roll method. In addition, part or all of them may be implemented in batches. 6. Manufacturing method of light control film Next, the method of manufacturing the light control film 20 using the said translucent conductive film 1 is demonstrated with reference to FIG. 2. FIG. The method is shown in FIG. 2 and includes: step (6), which is to manufacture two light-transmitting conductive films 1; and step (7), which is to sandwich the dimming by two light-transmitting conductive films 1 Functional layer 5. 6-1. Step (6) In step (6), two light-transmitting conductive films 1 described above are produced. Furthermore, one light-transmitting conductive film 1 may be cut and processed to prepare two light-transmitting conductive films 1. The two translucent conductive films 1 are the first translucent conductive film 1A and the second translucent conductive film 1B. 6-2. Step (7) Step (7) is implemented after step (6). In step (7), on the upper surface (surface) of the inorganic layer 4 in the first translucent conductive film 1A, the dimming function layer 5 is formed, for example, by a wet method. The dimming function layer 5 is, for example, an electrochromic layer or a liquid crystal layer, and preferably a liquid crystal layer. In this step (7), for example, a solution containing a liquid crystal composition is applied to the upper surface of the inorganic layer 4 in the first translucent conductive film 1A. Examples of the liquid crystal composition include known ones contained in the solution, for example, the liquid crystal dispersion resin described in Japanese Patent Application Laid-Open No. 8-194209. Then, the second transparent conductive film 1B is laminated on the surface of the coating film so that the inorganic layer 4 of the second transparent conductive film 1B is in contact with the surface of the coating film. Thereby, the coating film is sandwiched by the two light-transmitting conductive films 1, that is, the first light-transmitting conductive film 1A and the second light-transmitting conductive film 1B. After that, the coating film is appropriately treated (in the case where the liquid crystal composition contains an ultraviolet curable composition, ultraviolet light is irradiated) to form the dimming function layer 5. The light control function layer 5 is formed between the inorganic layer 4 of the first light-transmitting conductive film 1A and the inorganic layer 4 of the second light-transmitting conductive film 1B. Thereby, the light control film 20 provided with the 1st translucent conductive film 1A, the light control function layer 5, and the 2nd translucent conductive film 1B in this order is obtained. In addition, the light control film 20 is provided in a light control device (not shown, for example, a light control window, etc.) equipped with a power supply (not shown), a control device (not shown), and the like. In a dimming device not shown, a voltage is applied to the light-transmitting conductive layer 3 in the first light-transmitting conductive film 1A and the light-transmitting conductive layer 3 in the second light-transmitting conductive film 1B by a power supply, This generates an electric field between them. Furthermore, by controlling the above-mentioned electric field by the control device, the dimming function layer 5 located between the first translucent conductive film 1A and the second translucent conductive film 1B blocks light or transmits light. 7. Effects of the first embodiment Since the light-transmitting conductive film 1 includes the inorganic layer 4, the hydrophilic performance can be stably maintained. Therefore, the reliability of the translucent conductive film 1 is excellent. Furthermore, since the thickness T4 of the inorganic layer 4 of the transparent conductive film 1 is equal to or less than the above upper limit, the transparent conductive layer 3 and the inorganic layer 4 can be etched together quickly and reliably. Therefore, the pattern processability of the translucent conductive film 1 is excellent. In addition, since the water contact angle θ1 of the inorganic layer 4 after more than 80 hours after the formation of the inorganic layer 4 is below the above upper limit, the light control function layer 5 with a uniform thickness can be formed on the surface of the inorganic layer 4 by a wet method. Therefore, the light control film 20 excellent in reliability can be obtained. Furthermore, for the translucent conductive film 1, if the inorganic layer 4 is formed by a sputtering method, that is, if the inorganic layer 4 is a sputtering layer, the inorganic layer 4 is uniform and may have the above-mentioned thickness T4, and , The scratch resistance is excellent, and the adhesion with the translucent base material 2 (specifically, the functional layer 7) becomes good. In addition, in this light-transmitting conductive film 1, if the inorganic layer 4 contains an inorganic oxide, the hydrophilicity is particularly excellent. In addition, for the translucent conductive film 1, if the thickness of at least one of the thickness T8 of the first inorganic oxide layer 8 and the thickness T10 of the second inorganic oxide layer 10 is less than the above upper limit, it can be quickly and The transparent conductive layer 3 and the inorganic layer 4 are surely etched together. Furthermore, according to this method, if the inorganic layer 4 having a thickness T4 below the upper limit is formed in step (3), then in step (4) subsequent to step (3), the light-transmitting conductive layer can be quickly and surely The layer 3 and the inorganic layer 4 are etched together. In addition, since the water contact angle θ1 of the inorganic layer 4 after more than 80 hours after the formation of the inorganic layer 4 is below the above upper limit, the light control function layer 5 with a uniform thickness can be formed on the surface of the inorganic layer 4 by a wet method. In the light control film 20, since the light control function layer 5 is in contact with the inorganic layer 4 provided in the first light-transmitting conductive film 1A and the inorganic layer 4 provided in the second light-transmitting conductive film 1B, it can have Uniform thickness. Furthermore, since this light control film 20 is equipped with the above-mentioned translucent conductive film 1 which is excellent in reliability, it is excellent in reliability. In addition, according to the method of manufacturing the light control film 20, in step (6), the inorganic layer 4 is brought into contact with the inorganic layer 4 of the first light-transmitting conductive film 1A and the inorganic layer 4 of the second light-transmitting conductive film 1B, Therefore, the dimming function layer 5 with a uniform thickness T5 can be obtained. Therefore, the reliability of the dimming film 20 is excellent. 8. Modifications of the first embodiment. Furthermore, regarding the method of manufacturing the light-adjustable film 20, according to the use and purpose of the light-adjustable film 20, the amorphous light-transmitting conductive layer 3 is formed in step (2) In this case, before and after step (4), the step (5) of crystallizing the amorphous light-transmitting conductive layer 3 may also be included. Preferably, after step (4), the step (5) includes making the amorphous transparent Step (5) of crystallization of the photoconductive layer 3. In step (2), an amorphous light-transmitting conductive layer 3 is formed. Specifically, an amorphous first inorganic oxide layer 8 and an amorphous second inorganic oxide layer 10 are formed separately. Step (5) is preferably implemented after step (4). In step (5), the amorphous first inorganic oxide layer 8 and the second inorganic oxide layer 10 are crystallized. In order to crystallize the translucent conductive layer 3, for example, the patterned translucent conductive layer 3 is heated (annealing treatment), for example, 30 minutes at a temperature of 80°C or more and 150°C or less in an atmospheric environment Above and below 90 minutes. The surface resistance of the crystallized transparent conductive layer 3 is, for example, 0.5 Ω/□ or more, preferably 1 Ω/□ or more, more preferably 5 Ω/□ or more, and, for example, 50 Ω/□ or less. It is preferably 20 Ω/□ or less, and more preferably 15 Ω/□ or less. In addition, in the first embodiment, the functional layer 7 is provided in the translucent substrate 2. However, for example, as shown in FIG. 3, the functional layer 7 may not be provided, and only the base substrate 6 constitutes the translucent substrate. 2. That is, as shown in FIG. 3, in this case, the translucent substrate 2 does not include the functional layer 7 and only includes the base substrate 6. The light-transmitting conductive layer 3 (specifically, the first inorganic oxide layer 8) is arranged so as to be in contact with the upper surface of the base substrate 6 (the light-transmitting substrate 2). The translucent conductive layer 3 is arranged on the upper surface of the base substrate 6. Specifically, the first inorganic oxide layer 8 is disposed on the entire upper surface of the base substrate 6. In addition, as shown in FIG. 2, the two light-transmitting conductive films 1, that is, the first light-transmitting conductive film 1A and the second light-transmitting conductive film 1B are each provided with a specific inorganic layer 4, but for example, although not shown As shown, specifically, only the first light-transmitting conductive film 1A may include the inorganic layer 4, and the second light-transmitting conductive film 1B may not include the inorganic layer 4 to form the second light-transmitting conductive film 1B. In this modified example, although not shown, the second light-transmitting conductive film 1B includes a light-transmitting base material 2 and a light-transmitting conductive layer 3 in this order. Moreover, as shown in FIG. 1, in the translucent conductive film 1 of the first embodiment, the translucent conductive layer 3 includes a first inorganic oxide layer 8, a metal layer 9, and a second inorganic oxide layer 10 in this order. . However, although not shown in the figure, for example, a second metal layer and a third inorganic oxide layer may be sequentially arranged on the second inorganic oxide layer 10. In this case, the permeable conductive layer 3 includes a first inorganic oxide layer 8, a metal layer 9, a second inorganic oxide layer 10, a second metal layer, and a third inorganic oxide layer in this order. Furthermore, a third metal layer and a fourth inorganic oxide layer may be sequentially arranged on the third inorganic oxide layer. In this case, the permeable conductive layer 3 includes a first inorganic oxide layer 8, a metal layer 9, a second inorganic oxide layer 10, a second metal layer, a third inorganic oxide layer, a third metal layer, and a fourth Inorganic oxide layer. In the second translucent conductive film 1B, the surface of the translucent conductive layer 3, specifically, the surface of the second inorganic oxide layer 10 is exposed. The second inorganic oxide layer 10 of the second translucent conductive film 1B is in direct contact with the light control function layer 5. Furthermore, in the first embodiment, as shown in FIG. 1, the functional layer 7 is arranged on the upper surface of the base substrate 6. Although not shown, the functional layer 7 may be arranged on the base substrate 6. Both the surface and the bottom surface. According to each of the above-mentioned modification examples, the same effects as those of the first embodiment can be exerted. <Second Embodiment> In the second embodiment, the same reference numerals are given to the same members and steps as in the first embodiment, and detailed descriptions thereof are omitted. 1. Light-transmitting conductive film The light-transmitting conductive layer 3, as shown in FIG. 1, is provided with three layers of a first inorganic oxide layer 8, a metal layer 9, and a second inorganic oxide layer 10, but as shown in FIG. 4, In the second embodiment, only one layer of the first inorganic oxide layer 8 is provided. As shown in FIG. 4, the light-transmitting conductive layer 3 does not include the metal layer 9. Therefore, from the viewpoint of obtaining a low specific resistance, it is preferably crystalline. 1-1. Translucent conductive layer The translucent conductive layer 3 contains only the first inorganic oxide layer 8. The thickness T3 of the translucent conductive layer 3 is the same as the thickness T8 of the first inorganic oxide layer 8. Specifically, it is 15 nm or more, preferably 20 nm or more, and, for example, 300 nm or less, preferably It is 150 nm or less, more preferably 50 nm or less, still more preferably 40 nm or less, and particularly preferably 35 nm or less. If the thickness T3 of the light-transmitting conductive layer 3 is less than or equal to the above upper limit, the light-transmitting conductive layer 3 and the inorganic layer 4 can be etched quickly and surely in the subsequent step. If the thickness T3 of the translucent conductive layer 3 is greater than or equal to the above lower limit, crystallization can be performed reliably even when crystallinity is required. The translucent conductive layer 3 is preferably crystalline. The crystalline film has a clearly inferior hydrophilicity compared with the amorphous film. However, the transparent conductive film 1 in this case is provided with an inorganic layer 4 with excellent hydrophilicity on the transparent conductive layer 3, so even if it transmits light The conductive layer 3 is a crystalline film and can also be preferably used. The translucent conductive layer 3 may also be the first inorganic oxide layer 8 of a laminate (refer to symbols 13 and 14 in FIG. 4) including a plurality of inorganic oxide layers. Preferably, the first inorganic oxide layer 8 includes a laminate of a plurality of types (for example, two types) of indium tin composite oxide (ITO) having different compositions. Specifically, the first inorganic oxide layer 8 includes: a third indium tin composite oxide layer 13 which is arranged on the upper surface of the translucent substrate 2; and a fourth indium tin composite oxide layer 14 which is It is arranged on the upper surface of the third indium tin composite oxide layer 13. In the first inorganic oxide layer 8, the tin oxide content in the indium tin composite oxide layer (specifically, the fourth indium tin composite oxide layer 14) arranged on the side of the inorganic layer 4 (facing the inorganic layer 4) Compared with the tin oxide content rate in each indium tin composite oxide layer constituting the first inorganic oxide layer 8, it is preferably the smallest, not the largest. That is, in the first inorganic oxide layer 8, it is preferable that the tin oxide content becomes lower as it moves from the lower layer to the upper layer. Specifically, when the first inorganic oxide layer 8 includes a laminate of the third indium tin composite oxide layer 13 and the fourth indium tin composite oxide layer 14, the oxidation of the fourth indium tin composite oxide layer 14 The tin content is smaller than the tin oxide content of the third indium tin composite oxide layer 13. More specifically, the fourth indium tin composite oxide layer 14 has the smallest oxidation in the first inorganic oxide layer 8. Tin content rate. Thereby, even if the inorganic layer 4 is arrange|positioned on the transparent conductive layer 3, it can become a crystalline ITO film in a short time. The tin oxide content of the fourth indium tin composite oxide layer 14 is, for example, 0.1% by mass or more, preferably 0.5% by mass or more, more preferably 1% by mass or more, still more preferably 3% by mass or more, and, for example, 8 mass% or less, preferably 6 mass% or less, more preferably 5 mass% or less. On the other hand, the tin oxide content of layers other than the fourth indium tin composite oxide layer 14 (specifically, the third indium tin composite oxide layer 13) is, for example, 5 mass% or more, preferably 6 mass% or more , More preferably 9% by mass or more, still more preferably 10% by mass or more, and, for example, 20% by mass or less, preferably 15% by mass or less, and more preferably 13% by mass or less. 1-2. Inorganic layer The inorganic layer 4 is arranged on the upper surface of the first inorganic oxide layer 8. 2. Manufacturing method of translucent conductive film The manufacturing method of translucent conductive film also includes step (5) in addition to the above steps (1) to (4). 2-1. Step (2) In step (2), the transparent conductive layer 3 is formed only from the amorphous first inorganic oxide layer 8. 2-2. Step (5) Step (5) is implemented after step (4). In step (5), the patterned transparent conductive layer 3 including the amorphous first inorganic oxide layer 8 is crystallized. In order to crystallize the translucent conductive layer 3, for example, the patterned translucent conductive layer 3 is heated (annealing treatment), for example, 30 minutes or more, at a temperature of 80°C or more and 150°C or less in an atmospheric environment And less than 90 minutes. The surface resistance of the crystallized transparent conductive layer 3 is, for example, 30 Ω/□ or more, preferably 60 Ω/□ or more, for example, 200 Ω/□ or less, preferably 150 Ω/□ or less, more It is preferably 100 Ω/□ or less, and more preferably 90 Ω/□ or less. 3. The effect of the second embodiment The second embodiment can exert the same effect as the first embodiment. Furthermore, in the step (5) after the step (3), more specifically, in the step (5) after the step (4), the first inorganic oxide layer 8 containing amorphous is made transparent The conductive layer 3 is crystallized, so the surface resistance of the transparent conductive layer 3 can be reduced. 4. Modifications of the second embodiment In the second embodiment, step (5) is implemented after step (4), but step (5) may be implemented after step (3) and before step (4). That is, in step (3), the inorganic layer 4 is formed, and then in step (5), the translucent conductive layer 3 is crystallized, and thereafter, in step (4), the translucent conductive layer is etched 3. In the second embodiment, step (5) may be implemented after step (2). For example, in step (2), an amorphous translucent conductive layer 3 is formed, and then in step (5), the amorphous translucent conductive layer 3 is crystallized, and thereafter, in step ( In 3), the inorganic layer 4 is formed on the crystalline, light-transmitting conductive layer 3. For example, in step (2), an amorphous light-transmitting conductive layer 3 may be formed, and then, in step (5), the amorphous light-transmitting conductive layer 3 may be crystallized, and thereafter, In step (3), the inorganic layer 4 is formed on the crystalline light-transmitting conductive layer 3, and further, in the step (4), the crystalline light-transmitting conductive layer 3 is etched. In addition, although practicality is poor, for example, in step (2), an amorphous light-transmitting conductive layer may be formed, and then in step (5), the amorphous light-transmitting conductive layer may be crystallized Then, in step (4), the crystalline transparent conductive layer is etched, and then in step (3), an inorganic layer is formed on the crystalline transparent conductive layer. In the second embodiment, the functional layer 7 is provided in the light-transmitting substrate 2. However, for example, as shown in FIG. 6, the functional layer 7 may not be provided, and the light-transmitting substrate 2 may be composed of only the base substrate 6. . That is, as shown in FIG. 6, in this case, the translucent substrate 2 does not include the functional layer 7 and only includes the base substrate 6. The light-transmitting conductive layer 3 (specifically, the first inorganic oxide layer 8) is arranged so as to be in contact with the upper surface of the base substrate 6 (the light-transmitting substrate 2). With these modified examples, the same functions and effects as in the second embodiment can also be exerted. In addition, it is also possible to appropriately combine the first embodiment, the second embodiment, and these modified examples described above. [Examples] Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the examples as long as it does not exceed the gist of the invention, and various changes and modifications can be made based on the technical idea of the present invention. Examples and comparative examples are shown below to explain the present invention more specifically. In addition, the present invention is not limited to Examples and Comparative Examples at all. In addition, specific numerical values such as the blending ratio (content ratio), physical property values, and parameters used in the following description can be replaced with the blending ratios (content ratio), physical property values, etc. corresponding to those described in the above-mentioned "embodiment". The upper limit (defined as the value of "below" or "not reached") or the lower limit (defined as the value of "above" or "exceeding") corresponding to the record. Example 1 Step (1): Fabrication of a light-transmitting substrate Prepare a base substrate 6 containing a polyethylene terephthalate (PET) film (manufactured by Mitsubishi Resin) with a thickness of 50 μm, and then apply it to the base substrate The surface of 6 (the main surface on the side where the light-transmitting conductive layer 3 is formed) is coated with an ultraviolet curable resin containing acrylic resin, and cured by ultraviolet irradiation to form a hard coat layer 7'with a thickness of 2 μm. Thereby, the translucent substrate 2 having the base substrate 6 and the hard coat layer 7'in this order is produced. Step (2): Fabrication of the light-transmitting conductive layer. Then, the hard coat layer 7'of the light-transmitting substrate 2 is formed with a first inorganic oxide layer 8, a metal layer 9, and a second inorganic oxide layer in this order. The transparent conductive layer 3 of the laminated body of the material layer 10. Both the first inorganic oxide layer 8 and the second inorganic oxide layer 10 are indium tin oxide layers containing indium tin oxide. Specifically, the first inorganic oxide layer 8 and the second inorganic oxide layer 10 are both ITO targets (manufactured by Mitsui Metal Mining Co., Ltd.) by sintering 12% by mass of tin oxide and 88% by mass of indium oxide. ) A conductive oxide of indium tin with a thickness of 40 nm is formed by sputtering in a vacuum environment into which a film forming gas (a _{mixed gas containing Ar and O 2} (flow ratio Ar:O _{2 =100:3)) is introduced.} In addition, the metal layer 9 contains an Ag-Pd alloy. Specifically, the thickness of the metal layer 9 is formed by sputtering a silver alloy target containing an alloy of 99% by mass of Ag and 1% by mass of Pd in a vacuum environment in which a film-forming gas (Ar) is introduced. 8 nm silver alloy layer. _{Step (3): Fabrication of the inorganic layer Next, an inorganic layer 4 containing silicon oxide (SiO 2} ) with a thickness of 0.5 nm is formed on the second inorganic oxide layer 10 of the translucent conductive layer 3. The inorganic layer 4 is formed by introducing a Si target (manufactured by Datong Special Steel Co., Ltd.) containing a Si plate with a purity of 99.99% or more into a film-forming gas (including Ar and O ₂ (flow ratio Ar: O ₂ = 100: 41)) It is formed by sputtering in a vacuum environment of mixed gas). Thereby, the light-transmitting conductive film 1 including the light-transmitting conductive layer 3, the inorganic layer 4, and the light-adjusting function layer 5 in this order is manufactured. Examples 2 to 8 As described in Table 1, except for changing the thickness and manufacturing method of the inorganic layer 4, the treatment was carried out in the same manner as in Example 1, and the translucent conductive film 1 was manufactured. Comparative Example 1 As described in Table 1, except that the inorganic layer 4 was not formed, the treatment was performed in the same manner as in Example 1 to produce a translucent conductive film 1. Example 9 In step (2), _{the flow ratio of Ar and O 2} as the film forming gas was set to Ar:O ₂ =100:1, and the light-transmitting conductive layer 3 was made from only the first inorganic oxide layer 8 Except for this, according to Table 1, the treatment was performed in the same manner as in Example 1 to produce a translucent conductive film 1. Furthermore, the first inorganic oxide layer 8 is a laminate of a third indium tin composite oxide layer 13 with a tin oxide content of 10% by mass, and a fourth indium tin composite oxide layer 14 with a tin oxide content of 3% by mass. Body and formed. _{Example 10 In step (3), the inorganic layer 4 was formed from a SiO 2} layer with a thickness of 0.5 nm by a vacuum evaporation method (electron beam heating method), except that the treatment was performed in the same manner as in Example 1 , Manufacturing a translucent conductive film 1. Evaluation The following items were evaluated, and the results are shown in Table 1. (1) Water contact angle The water contact angle (θ0, θ1) of the inorganic layer 4 of Examples 1-10 is that a water droplet with a diameter of 1.5 mm is formed at the tip of the needle, which is brought into contact with the surface of the inorganic layer 4, and the water droplet is moved to the inorganic layer Above 4, the static contact angle between the water drop and the inorganic layer 4 was measured by a contact angle meter (made by Kyowa Interface Science Co., Ltd., CA-X type). The measurement was performed at 5 places, and when the difference between the maximum angle and the minimum angle was 5.0 degrees or less, it was judged that the measurement could be accurately performed, and the simple average value of the water contact angle was used to judge the wettability. When the water contact angle exceeds 5.0 degrees, accurate measurement cannot be performed, and it is assumed that the dimming function layer 5 partially shrinks, so regardless of the value, the wettability is regarded as "low". Furthermore, with regard to the water contact angle θ1, the water contact angle of the inorganic layer 4 was measured after the inorganic layer 4 was formed, and placed in an environment of 25° C. and a relative humidity of 40% for 80 hours. In addition, in Comparative Example 1, since the inorganic layer 4 was not provided, the water contact angle of the translucent conductive layer 3 was measured in the same manner as described above. Furthermore, although the light-transmitting conductive film 1 of Example 10 has a water contact angle of 50 degrees or less, the numerical value of the water contact angle varies depending on the measurement position, and it is difficult to measure the true value. (2) Thickness The thickness of the base substrate 6 was measured using a film thickness meter (manufactured by Ozaki Manufacturing Co., Ltd. (Peacock (registered trademark)), device name "digital dial gauge DG-205"). Measure the hard coat layer 7, the first inorganic oxide layer 8, the metal layer 9, and the second inorganic oxide layer 10 by cross-sectional observation using a transmission electron microscope (manufactured by Hitachi, Ltd., device name "HF-2000") The thickness. The thickness of the inorganic layer 4 was measured using a fluorescent X-ray analyzer (manufactured by Rigaku, device name "ZSX Primus II") (the thickness of the inorganic layer was obtained by subtracting the SiKa intensity from the translucent substrate). Furthermore, when performing fluorescent X-ray analysis, prepare in advance as follows. _{That is, a sample with a silicon oxide (SiO 2} ) layer with target thicknesses of 100 nm, 150 nm, and 200 nm formed on a PET substrate with a thickness of 50 μm is produced, and the fluorescent X-ray analyzer measures the amount of each sample. The SiKa intensity (the value obtained by subtracting the SiKa intensity from the PET substrate), and the actual film thickness of the silicon oxide layer of each sample was obtained by a transmission electron microscope. Based on the obtained SiKa intensity value and the actual film thickness, a calibration curve is prepared, and the thickness of the inorganic layer 4 is obtained based on the SiKa intensity. (3) Etching time and etching properties: 20 pieces of light-transmitting conductive film 1 cut into 5 cm squares were made, and immersed in an etching solution heated to 40°C (manufactured by ADEKA, product name "Adeka Chelumica SET-500"")in. After that, one sheet was taken out every 15 seconds for the immersion time, washed with water, wiped with water (to dry), confirmed the appearance of the translucent conductive film 1, and measured the resistance between two terminals at any three locations. In addition, the resistance measurement between the two terminals was carried out with a tester, and the distance between the terminals was set to 1.5 cm when the measurement was performed. Moreover, in the evaluation of the etching time, the residual error from the transparent conductive layer 3 or the inorganic layer 4 cannot be confirmed visually in the 5 cm square transparent conductive film 1, and the resistance between 2 terminals at any 3 locations When it exceeds 60 MΩ, it is judged that the etching is completed. The etching properties were evaluated based on the following criteria. ◎: The etching time is less than 60 seconds. ○: The etching time is 60 seconds or more and 180 seconds or less. △: The etching time exceeds 180 seconds and is 300 seconds or less. ×: The etching time exceeds 300 seconds. (4) The surface resistance of the light-transmitting conductive layer was measured according to JIS K 7194 (1994) using the four-terminal method. (5) Crystallinity The translucent conductive layer 3 in Example 9 was heated at 140° C. to evaluate the crystallinity of the translucent conductive layer 3. Specifically, the light-transmitting conductive film of each example was immersed in hydrochloric acid (concentration: 5 mass%) for 15 minutes, washed with water and dried, and the resistance between the terminals was measured between about 15 mm. According to the following criteria, Evaluate the crystallization rate. ○: The resistance between terminals between 15 mm is 10 kΩ or less. ×: The resistance between terminals between 15 mm exceeds 10 kΩ. Regarding Comparative Example 1, the crystallization rate was also evaluated in the same manner as in Example 9. (6) Shrinkage: Drop an aqueous solution of 5 mg of sodium chloride in 100 mL of water onto the translucent conductive layer 3 of each of the examples and comparative examples, or if there is no translucent conductive layer 3 In this case, it was dropped on the translucent base material 2, and the shrinkage was visually evaluated based on the following criteria. ○: No shrinkage is observed. △: Small shrinkage is observed, but the aqueous solution adequately adapts to the light-transmitting conductive layer 3 or the light-transmitting base material 2 as a whole. ×: Shrinkage is observed. (7) Peeling The inorganic layers of Examples 1 to 10 were observed, and peeling properties were evaluated as follows. ○: No peeling sites are scattered in the inorganic layer 4. △: Peeling sites are scattered in the inorganic layer 4. [Table 1]

In addition, the above-mentioned invention is provided in the form of the exemplified embodiment of this invention, but it is only an illustration, and should not be interpreted restrictively. Variations of the present invention known to those in this technical field are included in the scope of the following patent applications. [Industrial Applicability] The light-transmitting conductive film of the present invention is provided in, for example, a light-adjusting film.

1‧‧‧Translucent conductive film 1A‧‧‧First translucent conductive film 1B‧‧‧Second translucent conductive film 2‧‧‧Translucent base material 3‧‧‧Translucent conductive layer 4 ‧‧‧Inorganic layer 5‧‧‧Dimming functional layer 6‧‧‧Base substrate 7‧‧‧Functional layer 7'‧‧‧Hard coating layer8‧‧‧First inorganic oxide layer9‧‧‧Metal layer 10‧‧‧The second inorganic oxide layer 13‧‧‧The third indium tin composite oxide layer 14‧‧‧The fourth indium tin composite oxide layer 20‧‧‧Dimming film T3‧‧‧Transparent conductive layer The thickness of T4‧‧‧the thickness of the inorganic layer T5‧‧‧the thickness of T8‧‧‧the thickness of the first inorganic oxide layer T10‧‧‧the thickness of the second inorganic oxide layer

Fig. 1 is a cross-sectional view showing the first embodiment of the translucent conductive film of the present invention. Fig. 2 is a cross-sectional view of a light-adjusting film provided with the light-transmitting conductive film shown in Fig. 1. Fig. 3 shows a modified example of the light-transmitting conductive film shown in Fig. 1. Fig. 4 is a cross-sectional view showing a second embodiment of the transparent conductive film of the present invention. Fig. 5 is a cross-sectional view of a light-adjusting film provided with the light-transmitting conductive film shown in Fig. 4. Fig. 6 shows a modified example of the light-transmitting conductive film shown in Fig. 4.

1‧‧‧Transparent conductive film

2‧‧‧Transparent substrate

3‧‧‧Transparent conductive layer

4‧‧‧Inorganic layer

5‧‧‧Dimming function layer

6‧‧‧Base material

7‧‧‧Functional layer

7'‧‧‧Hard coating

8‧‧‧The first inorganic oxide layer

9‧‧‧Metal layer

10‧‧‧Second inorganic oxide layer

T4‧‧‧The thickness of the inorganic layer

T8‧‧‧The thickness of the first inorganic oxide layer

T10‧‧‧The thickness of the second inorganic oxide layer

Claims (8)

A light-transmitting conductive film, characterized in that it has a light-transmitting substrate, a light-transmitting conductive layer and an inorganic layer in this order, the thickness of the inorganic layer is less than 5nm, and the water contact angle of the inorganic layer is 50 degrees Hereinafter, the above-mentioned translucent conductive layer is arranged in a dry type. The light-transmitting conductive film of claim 1, wherein the water contact angle of the inorganic layer after 80 hours or more has passed after the formation of the inorganic layer is 50 degrees or less. The light-transmitting conductive film of claim 1, wherein the inorganic layer includes an inorganic oxide. The translucent conductive film of claim 1, wherein the translucent conductive layer has an indium-based conductive oxide layer, and the thickness of the indium-based conductive oxide layer is 50 nm or less. A method for manufacturing a light-transmitting conductive film, characterized in that it comprises: step (1), which prepares a light-transmitting substrate; step (2), which is dry-formed on the surface of the above-mentioned light-transmitting substrate Translucent conductive layer; step (3), which is to form an inorganic layer on the surface of the translucent conductive layer; and step (4), which is to etch the translucent conductive layer after the above step (3); And the thickness of the above-mentioned inorganic layer is less than 5nm, The water contact angle of the inorganic layer after 80 hours or more has passed after the formation of the inorganic layer is 50 degrees or less. The method of manufacturing a light-transmitting conductive film according to claim 5, wherein in the above step (2), the amorphous light-transmitting conductive layer is formed, and after the above step (3), the method further includes making the amorphous Step (5) of crystallization of the above-mentioned translucent conductive layer. A light-adjusting film, characterized in that it comprises a first light-transmitting conductive film, a light-adjusting functional layer, and a second light-transmitting conductive film in this order, the first light-transmitting conductive film and/or the second light-transmitting film The conductive film is a light-transmitting conductive film according to claim 1, and the light-adjusting function layer is in contact with an inorganic layer included in the light-transmitting conductive film. A method for manufacturing a light-adjustable film, which is characterized in that it comprises: step (6), which is to manufacture two light-transmitting conductive films; and step (7), which is sandwiched by two light-transmitting conductive layers. Holding a dimming functional layer; and in the above step (6), at least one of the above-mentioned translucent conductive film is manufactured by the manufacturing method as in claim 5, and in the above step (7), the above-mentioned dimming function layer and At least one inorganic layer of the above-mentioned translucent conductive film is in contact with each other.

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