KR101991047B1 - Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof - Google Patents

Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof Download PDF

Info

Publication number
KR101991047B1
KR101991047B1 KR1020150093638A KR20150093638A KR101991047B1 KR 101991047 B1 KR101991047 B1 KR 101991047B1 KR 1020150093638 A KR1020150093638 A KR 1020150093638A KR 20150093638 A KR20150093638 A KR 20150093638A KR 101991047 B1 KR101991047 B1 KR 101991047B1
Authority
KR
South Korea
Prior art keywords
conductive laminate
oxide layer
metal oxide
metal layer
less
Prior art date
Application number
KR1020150093638A
Other languages
Korean (ko)
Other versions
KR20170003239A (en
Inventor
김용찬
김수진
김기환
Original Assignee
주식회사 엘지화학
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to KR1020150093638A priority Critical patent/KR101991047B1/en
Publication of KR20170003239A publication Critical patent/KR20170003239A/en
Application granted granted Critical
Publication of KR101991047B1 publication Critical patent/KR101991047B1/en

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Laminated Bodies (AREA)

Abstract

TECHNICAL FIELD The present invention relates to a conductive laminate, a method of manufacturing the same, a transparent electrode including the same, and an electronic device.

Description

TECHNICAL FIELD [0001] The present invention relates to a conductive laminate, a method of manufacturing the same, a transparent electrode and an electronic device including the conductive laminate,

TECHNICAL FIELD The present invention relates to a conductive laminate, a method of manufacturing the same, a transparent electrode including the same, and an electronic device.

With the emergence of the new and renewable energy industry together with the high-tech information technology industry, there is a growing interest in transparent electrodes having both electric conductivity and light transmittance. Transparent electrodes in organic electronic devices must transmit light through a thin transparent substrate, and at the same time have good electrical conductivity.

Recently, development of flexible transparent optoelectronic devices including flexibility and optical technology including various displays and solar cells using polymer substrates is required. Transparent conductive oxide (TCO) is one of the most widely used transparent electrode materials. Specifically, the transparent conductive oxide is typically ITO. However, due to the fragile characteristics of the transparent conductive oxide due to the material, deterioration of electrical characteristics due to progress of the bending test has been confirmed.

Therefore, it is necessary to develop a conductive laminate capable of replacing a transparent electrode made of a transparent conductive oxide such as ITO.

Korean Laid-Open Publication No. 10-2010-0036957

TECHNICAL FIELD The present invention relates to a conductive laminate, a method for producing the same, a transparent electrode including the same, and an electronic device.

One embodiment of the present disclosure relates to a semiconductor device comprising: a first metal oxide layer; A metal layer comprising silver provided on the first metal oxide layer; And a second metal oxide layer provided on the metal layer,

Wherein the thickness of the metal layer is 5 nm or more and 20 nm or less, the content of oxygen atoms in the metal layer is 6.5 at% or more and 15 at% or less, and the light transmittance of the conductive laminate is 80% Provide sieve.

One embodiment of the present disclosure provides a transparent electrode comprising the conductive laminate.

An embodiment of the present disclosure provides an electronic device including the conductive laminate.

An embodiment of the present disclosure is a method of manufacturing a semiconductor device, comprising: forming a first conductive oxide layer; Forming a metal layer including silver on the first conductive oxide layer; And forming a second conductive oxide layer on the metal layer,

Wherein the forming of the metal layer comprises using a deposition method using silver as an evaporation source in an atmosphere having an oxygen partial pressure of 10% or less.

The conductive laminate according to one embodiment of the present invention has an advantage of having a high light transmittance and a low sheet resistance value.

Further, the conductive laminate according to one embodiment of the present specification has excellent durability. As a matter of fact, the conductive laminate according to one embodiment of the present invention has an advantage in that the reliability of the product is excellent because deterioration in performance can be minimized even under harsh environmental conditions.

In addition, the conductive laminate according to one embodiment of the present invention can prevent the problem that the metal layer is oxidized by reacting with oxygen in the atmosphere due to the structural characteristic that the metal layer is provided between the metal oxide layers.

In addition, the conductive laminate according to one embodiment of the present invention has an advantage that it can be utilized as a flexible transparent electrode because it can secure excellent ductility by the metal layer.

1 shows a laminated structure of a conductive laminate according to an embodiment of the present invention.
FIG. 2 shows light transmittance according to wavelengths of the conductive laminate prepared according to the above-described Comparative Example and Examples 1 to 5.
FIG. 3 shows the change in haze value of the conductive laminate according to the time elapsed according to the experimental example.

When a member is referred to herein as being "on " another member, it includes not only a member in contact with another member but also another member between the two members.

Whenever a component is referred to as "comprising ", it is to be understood that the component may include other components as well, without departing from the scope of the present invention.

Hereinafter, the present invention will be described in more detail.

The disclosure includes a first metal oxide layer; A metal layer provided on the first metal oxide layer; And a second metal oxide layer provided on the metal layer.

The present inventors have found that the performance of a metal layer is degraded in a conductive laminate having a metal layer made of silver between two metal oxide layers. Such a problem may occur due to the nature of the silver forming the metal layer to reduce the surface free energy, the shape of agglomeration between the silver particles and the corrosion caused by the external environment. Further, under high temperature and high humidity conditions, the performance degradation of the metal layer is further accelerated, which may cause deterioration of performance such as light transmittance, haze and electrical conductivity of the conductive laminate.

Accordingly, the present inventors have invented a conductive laminate capable of solving the above problems. Specifically, the conductive laminate according to one embodiment of the present invention is characterized in that the content of oxygen atoms in the metal layer containing silver is 6.5 at% or more and 15 at% or less, and the thickness of the metal layer is 5 nm or more and 20 nm or less do.

In this specification, conductivity means electrical conductivity.

Specifically, one embodiment of the present disclosure relates to a semiconductor device comprising: a first metal oxide layer; A metal layer comprising silver provided on the first metal oxide layer; And a second metal oxide layer provided on the metal layer,

Wherein the thickness of the metal layer is 5 nm or more and 20 nm or less, the content of oxygen atoms in the metal layer is 6.5 at% or more and 15 at% or less, and the light transmittance of the conductive laminate is 80% Provide sieve.

The conductive structure according to one embodiment of the present disclosure has a high light transmittance and can realize a high electrical conductivity by an inner metal layer. Further, the conductive laminate according to one embodiment of the present invention can prevent the problem that the metal layer is oxidized by reacting with oxygen in the atmosphere due to the structural characteristic that the metal layer is provided between the metal oxide layers.

1 shows a laminated structure of a conductive laminate according to an embodiment of the present invention. Specifically, Figure 1 shows a first metal oxide layer 101; A metal layer 301; And a second metal oxide layer 201 are successively formed on the first conductive layer.

According to one embodiment of the present invention, the thickness of the metal layer may be 5 nm or more and 15 nm or less. According to an embodiment of the present invention, the thickness of the metal layer may be 8 nm or more and 12 nm or less. Specifically, according to one embodiment of the present disclosure, the thickness of the metal layer may be 10 nm.

The thickness of the metal layer may mean an average thickness of the metal layer provided in the conductive laminate. The thickness of the metal layer may have a standard deviation of 1 nm or more and 2 nm or less.

When the thickness of the metal layer is within the above range, the conductive laminate has an advantage that it can have a good electrical conductivity and a low resistance value. In particular, when the thickness of the metal layer is less than 5 nm, it is difficult to form a continuous film because it is difficult to form a continuous film. When the thickness exceeds 20 nm, light transmittance of the conductive laminate may be lowered.

According to an embodiment of the present invention, the metal layer may include silver as a main material. Specifically, according to an embodiment of the present invention, the metal layer may include silver as a main material and have an oxygen content of 6.5 at% or more and 15 at% or less. However, some impurities may be contained in the manufacturing process.

According to an embodiment of the present invention, the content of oxygen atoms in the metal layer may be 7 at% to 13 at%

When the content of oxygen atoms in the metal layer is within the above range, aggregation of silver in the metal layer can be minimized and the durability of the metal layer can be improved.

In addition, when the oxygen atom content of the metal layer is within the above range, the conductive laminate can have excellent light transmittance and conductivity. Specifically, when the oxygen atom content of the metal layer is within the above range, it is possible to realize a conductive laminate having an excellent light transmittance of 80% or more and a low sheet resistance value of 20 Ω / □ or less. Also, when the oxygen atom content of the metal layer is within the above range, the conductive laminate has an advantage of excellent durability against the environment. Specifically, the conductive laminate can minimize deterioration in performance over time, and can have excellent durability against high temperature and high humidity environments.

The oxygen atom content can be measured through X-ray photoelectron spectroscopy ("XPS") analysis through the ratio of oxygen atoms to silver atoms of the metal layer. Specifically, the oxygen atom content (at%) can be obtained through the number of oxygen atoms with respect to the number of silver atoms obtained through XPS analysis.

According to an embodiment of the present invention, the refractive index of the first metal oxide layer may be 1.2 or more and 2.8 or less in light of 550 nm wavelength. Specifically, the refractive index of the first metal oxide layer may be 1.9 or more and 2.75 or less.

According to an embodiment of the present invention, the refractive index of the second metal oxide layer may be 1.5 or more and 2.5 or less in light with a wavelength of 550 nm.

In the present specification, the refractive index means a refractive index of light.

The first metal oxide layer may serve as a high refractive index material to improve the light transmittance of the conductive laminate of the multilayer film using the metal layer and facilitate the deposition of the metal layer.

The refractive index of each of the layers is obtained through optical design so that the light transmittance of the conductive laminate can be 80% or more. Therefore, when the refractive index is out of the range, the light transmittance of the conductive laminate falls to 80% or less.

In addition, the refractive index of each layer can be controlled by controlling the deposition process in addition to being controlled by the thickness. Specifically, the crystallization degree can be controlled by controlling the deposition conditions of each layer, so that the refractive index can be different even if the same thickness and material are used.

According to an embodiment of the present invention, the thickness of the first metal oxide layer may be 20 nm or more and 60 nm or less. Specifically, according to one embodiment of the present invention, the thickness of the first metal oxide layer may be 30 nm or more and 40 nm or less.

When the thickness of the first metal oxide layer is within the above range, the light transmittance of the conductive laminate in the form of a multilayer thin film is advantageous. Specifically, when the thickness of the first metal oxide layer is out of the above-mentioned range, there arises a problem that the light transmittance of the conductive laminate is lowered. Further, when the thickness is out of the above range, the defective rate of the deposited metal layer can be increased.

According to an embodiment of the present invention, the thickness of the second metal oxide layer may be 20 nm or more and 80 nm or less. Specifically, according to an embodiment of the present invention, the thickness of the second metal oxide layer may be 40 nm or more and 50 nm or less.

When the thickness of the second metal oxide layer is within the above range, the conductive laminate has an advantage that it can have a good electrical conductivity and a low resistance value. Specifically, the thickness range of the second metal oxide layer is obtained through optical design. When the thickness of the second metal oxide layer is out of the range, the light transmittance of the conductive laminate is lowered.

According to an embodiment of the present invention, the first metal oxide layer and the second metal oxide layer may be formed of a material selected from the group consisting of Sb, Ba, Ga, Ge, Hf, In, La, , V, Y, Zn, and Zr.

According to one embodiment of the present disclosure, the conductive laminate further includes a transparent support, and the first metal oxide layer may be provided on the transparent support.

The transparent support may be a glass substrate or a transparent plastic substrate having excellent transparency, surface smoothness, ease of handling, and waterproofness, but is not limited thereto and is not limited as long as it is a substrate commonly used in electronic devices. Specifically, the substrate may be glass; Urethane resin; Polyimide resin; Polyester resin; (Meth) acrylate-based polymer resin; A polyolefin-based resin such as polyethylene or polypropylene, or the like.

According to one embodiment of the present invention, the H / H 0 of the conductive laminate may be 5 or less. H 0 is the initial haze value of the conductive laminate, and H is the haze value of the conductive laminate after 36 hours in an atmosphere of 85 ° C and 85% RH.

The conductive laminate according to one embodiment of the present invention may not significantly change the haze value even though the conditions are elapsed after the elapse of 36 hours at 85 ° C and 85% RH. According to one embodiment of the present disclosure, when the oxygen content in the metal layer is 15 at% or less, the agglomeration phenomenon and oxidation of silver in the metal layer can be minimized.

Therefore, the conductive laminate according to one embodiment of the present invention has an advantage in that the reliability of the product is excellent since deterioration in performance can be minimized even under harsh environmental conditions.

According to one embodiment of the present invention, the sheet resistance value of the conductive laminate may be 20? /? Or less. Specifically, according to one embodiment of the present invention, the sheet resistance value of the transparent electrode may be 10 Ω / □ or less.

According to one embodiment of the present invention, the sheet resistance value of the transparent electrode may have a value of 0.1 Ω / □ or more and 20 Ω / □ or less. The sheet resistance value of the transparent electrode can be determined by the metal layer, and a low value of sheet resistance value can be realized depending on a thickness range of the metal layer and a thickness range of the second metal oxide layer.

When the transparent electrode is applied to an electronic device by a low sheet resistance value, the efficiency of the electronic device is increased. Furthermore, despite its low sheet resistance value, it has the advantage of having high light transmittance.

According to one embodiment of the present invention, the total thickness of the conductive laminate may be 50 nm or more and 300 nm or less.

The thickness of the conductive laminate can be determined through optical design. For optical design, the refractive index of each layer of the conductive laminate is required, and the thickness of each layer can be determined through this value. That is, in order to realize the light transmittance of the conductive laminate by 80% or more, the total thickness of the conductive laminate may be 50 nm or more and 300 nm or less, more specifically 70 nm or more and 200 nm or less.

According to one embodiment of the present disclosure, the light transmittance of the conductive laminate may be 80% or more at a wavelength of 550 nm. Specifically, according to one embodiment of the present disclosure, the light transmittance of the conductive laminate may be 85% or more or 90% or more in light with a wavelength of 550 nm.

According to one embodiment of the present invention, the haze value of the conductive laminate may be 1 or less. Specifically, according to one embodiment of the present disclosure, the haze value of the electrically conductive layer may be 0.5 or less.

The haze value means a haze value of the conductive laminate before passing through an atmosphere of high temperature and high humidity.

In the present specification, "haze value" is a value measured using a color research laboratory HM-150 hazemeter of Murakami.

The conductive laminate according to one embodiment of the present invention has excellent light transmittance and low haze value, and thus can be used as a transparent electrode of an electronic device. Furthermore, the conductive laminate has a low light loss rate due to high light transmittance and can increase the efficiency of the electronic device.

One embodiment of the present disclosure provides a transparent electrode comprising the conductive laminate.

According to one embodiment of the present disclosure, the transparent electrode may be flexible.

An embodiment of the present disclosure provides an electronic device including the conductive laminate.

In addition, one embodiment of the present invention provides an electronic device including the transparent electrode.

The electronic device including the transparent electrode including the conductive laminate can realize a high reaction rate due to the conductive laminate having high light transmittance and low sheet resistance.

According to an embodiment of the present invention, the electronic device may be a touch panel, a light emitting glass, a light emitting device, a solar cell, or a transistor.

The touch panel, the light emitting glass, the light emitting device, the solar cell, and the transistor may be commonly known in the art, and the electrode may be used as the transparent electrode of the present invention.

One embodiment of the present invention provides a method of manufacturing the conductive laminate. Specifically, one embodiment of the present disclosure includes: forming a first conductive oxide layer; Forming a metal layer including silver on the first conductive oxide layer; And forming a second conductive oxide layer on the metal layer,

Wherein the forming of the metal layer comprises using a deposition method using silver as an evaporation source in an atmosphere having an oxygen partial pressure of 10% or less.

According to an embodiment of the present invention, the step of forming the metal layer may control the oxygen content in the metal layer by controlling the oxygen partial pressure during deposition.

According to one embodiment of the present disclosure, the deposition source may have a silver content of 99 at% or more.

According to an embodiment of the present invention, the step of forming the second metal oxide layer may use a deposition method with the oxygen partial pressure removed. This is to prevent the oxygen atom content in the metal layer from rising during the formation of the second metal oxide layer.

According to one embodiment of the present disclosure, the step of forming the second metal oxide layer may be a deposition method using an atmosphere having an oxygen partial pressure of 0%. Specifically, according to one embodiment of the present disclosure, The step of forming the oxide layer may be a deposition method in an atmosphere having a partial pressure of argon and hydrogen gas of 100%

Hereinafter, the present invention will be described in detail by way of examples with reference to the drawings. However, the embodiments according to the present disclosure can be modified in various other forms, and the scope of the present specification is not construed as being limited to the embodiments described below. Embodiments of the present disclosure are provided to more fully describe the present disclosure to those of ordinary skill in the art.

[Comparative Example]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. On the first metal oxide layer, a metal layer was deposited to a thickness of 10 nm using Ag as an evaporation source and a DC sputtering method in an oxygen partial pressure of 0% atmosphere. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The oxygen atom content at any two points of the metal layer of the conductive laminate prepared as in the above Comparative Example was measured to be 5.5 at% and 6.3 at%.

The conductive laminate prepared as in the above Comparative Example had a light transmittance of 88.1% at a wavelength of 550 nm, a haze value of 0.1, and a sheet resistance of 4.99 Ω / □.

 [Example 1]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. On the first metal oxide layer, a metal layer was deposited to a thickness of 10 nm by using DC sputtering in a 2% oxygen partial pressure atmosphere using Ag as an evaporation source. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The oxygen atom content at any two points of the metal layer of the conductive laminate prepared as in Example 1 was measured to be 7.6 at% and 7.8 at%.

The conductive laminate produced in the same manner as in Example 1 had a light transmittance of 90% at a wavelength of 550 nm, a haze value of 0.2, and a sheet resistance of 6.02? / ?.

[Example 2]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. On the first metal oxide layer, a metal layer was deposited to a thickness of 10 nm by using DC sputtering in a 4% oxygen partial pressure atmosphere using Ag as an evaporation source. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The oxygen atom content at any two points of the metal layer of the conductive laminate prepared as in Example 2 was 12.2 at% and 12.5 at%.

The conductive laminate prepared as in Example 2 had a light transmittance of 89.8% at a wavelength of 550 nm, a haze value of 0.1, and a sheet resistance of 7.3 Ω / □.

[Example 3]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. A metal layer was deposited to a thickness of 10 nm on the first metal oxide layer using Ag as an evaporation source and a DC sputtering method in an oxygen partial pressure of 6% atmosphere. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The oxygen atom content at any two points of the metal layer of the conductive laminate prepared as in Example 3 was measured to be 11.7 at% and 11.5 at%.

The conductive laminate prepared as in Example 3 had a light transmittance of 88.4% at a wavelength of 550 nm, a haze value of 0.1, and a sheet resistance of 9.34? / ?.

[Example 4]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. A metal layer was deposited to a thickness of 10 nm on the first metal oxide layer using Ag as an evaporation source and a DC sputtering method in an oxygen partial pressure of 8% atmosphere. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The conductive laminate prepared as in Example 4 had a light transmittance of 88.4% at a wavelength of 550 nm, a haze value of 0.1, and a sheet resistance of 9.34? / ?.

[Example 5]

Nb oxide was deposited on the glass substrate by DC sputtering to a thickness of 30 nm to form a first metal oxide layer. On the first metal oxide layer, a metal layer was deposited to a thickness of 10 nm by using DC sputtering in an oxygen partial pressure of 10% atmosphere using Ag as an evaporation source. A zinc oxide layer (AZO) doped with Al as a second metal oxide layer was deposited on the metal layer to a thickness of 50 nm to prepare a conductive laminate.

The oxygen atom content at any two points of the metal layer of the conductive laminate prepared as in Example 5 was measured to be 12.6 at% and 12.3 at%.

The conductive laminate prepared as in Example 5 had a light transmittance of 87% at a wavelength of 550 nm, a haze value of 0.2, and a sheet resistance of 11.02? / ?.

FIG. 2 shows light transmittance according to wavelengths of the conductive laminate prepared according to the above-described Comparative Example and Examples 1 to 5.

Referring to FIG. 2, the conductive laminate according to the embodiment exhibits a light transmittance of 85% or more in a light having a wavelength of 550 nm and exhibits a high light transmittance in the entire visible light region. In addition, it can be seen that the conductive laminate according to Examples 1 and 2 exhibits particularly excellent light transmittance. Specifically, when the oxygen partial pressure is adjusted to 4% or less in the formation of the metal layer, better light transmittance can be exhibited in a short wavelength and a long wavelength region in visible light.

[Experimental Example] - Evaluation of environmental resistance

In order to measure the durability of the conductive laminate produced according to the comparative examples and the examples, the change in haze value over time was measured in an atmosphere of 85 ° C and 85% RH.

FIG. 3 shows the change in haze value of the conductive laminate according to the time elapsed according to the experimental example.

Referring to FIG. 3, it can be seen that the haze value of the conductive structure according to the comparative example sharply increases with the endurance evaluation time, but the haze value of the conductive structure according to the embodiment increases little.

This means that the metal layer of the conductive laminate according to the embodiment is free from the lump of silver in the metal layer due to the content of the proper oxygen atoms and thus is excellent in environmental resistance.

101: a first metal oxide layer
201: a second metal oxide layer
301: metal layer

Claims (16)

A first metal oxide layer; A metal layer comprising silver provided on the first metal oxide layer; And a second metal oxide layer provided on the metal layer,
The thickness of the metal layer is 5 nm or more and 20 nm or less,
The content of oxygen atoms in the metal layer is not less than 6.5 at% and not more than 15 at%
Wherein the light transmittance of the conductive laminate is 80% or more at a light having a wavelength of 550 nm. The method according to claim 1,
Wherein the content of oxygen atoms in the metal layer is 7 at% or more and 13 at% or less. The method according to claim 1,
Wherein the refractive index of the first metal oxide layer is 1.2 or more and 2.8 or less in light with a wavelength of 550 nm. The method according to claim 1,
Wherein the thickness of the first metal oxide layer is 20 nm or more and 60 nm or less. The method according to claim 1,
Wherein the refractive index of the second metal oxide layer is 1.5 or more and 2.5 or less in a light having a wavelength of 550 nm. The method according to claim 1,
Wherein the thickness of the second metal oxide layer is 20 nm or more and 80 nm or less. The method according to claim 1,
The first metal oxide layer and the second metal oxide layer may be formed of at least one selected from the group consisting of Sb, Ba, Ga, Ge, Hf, In, La, Ma, Se, Si, Ta, Se, Ti, V, And an oxide containing at least one selected from the group consisting of the above-mentioned oxides. The method according to claim 1,
The H / H 0 of the conductive laminate is 5 or less,
Wherein H 0 is the initial haze value of the conductive laminate and H is the haze value of the conductive laminate after 36 hours in an atmosphere of 85 ° C and 85% RH. The method according to claim 1,
And the sheet resistance value of the conductive laminate is 20? /? Or less. The method according to claim 1,
Wherein the haze value of the conductive laminate is 1 or less. A transparent electrode comprising a conductive laminate according to any one of claims 1 to 10. The method of claim 11,
Wherein the transparent electrode is flexible. An electronic device comprising a conductive laminate according to any one of claims 1 to 10. delete delete delete
KR1020150093638A 2015-06-30 2015-06-30 Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof KR101991047B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150093638A KR101991047B1 (en) 2015-06-30 2015-06-30 Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150093638A KR101991047B1 (en) 2015-06-30 2015-06-30 Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof

Publications (2)

Publication Number Publication Date
KR20170003239A KR20170003239A (en) 2017-01-09
KR101991047B1 true KR101991047B1 (en) 2019-06-19

Family

ID=57811352

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150093638A KR101991047B1 (en) 2015-06-30 2015-06-30 Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof

Country Status (1)

Country Link
KR (1) KR101991047B1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004139780A (en) 2002-10-16 2004-05-13 Idemitsu Kosan Co Ltd Electrode substrate for organic electroluminescent device, organic electroluminescent device, and manufacturing method of its device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000040402A1 (en) * 1998-12-28 2000-07-13 Asahi Glass Company, Limited Layered product
KR101201099B1 (en) 2008-09-30 2012-11-13 주식회사 엘지화학 Transparent conductive layer and Transparent electrode comprising the same
KR101192663B1 (en) * 2010-01-04 2012-10-19 삼성코닝정밀소재 주식회사 Transparent conductive thin film and display filter containing the same
KR20140126842A (en) * 2013-04-23 2014-11-03 포항공과대학교 산학협력단 Method for forming transparent electrode and the transparent electrode, light-emitting diode and optical device including it

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004139780A (en) 2002-10-16 2004-05-13 Idemitsu Kosan Co Ltd Electrode substrate for organic electroluminescent device, organic electroluminescent device, and manufacturing method of its device

Also Published As

Publication number Publication date
KR20170003239A (en) 2017-01-09

Similar Documents

Publication Publication Date Title
KR100821541B1 (en) Transparent conductive film
JP6548910B2 (en) Transparent conductive film for electric field drive type light control element, light control film, and electric field drive type light control element
WO2012086484A1 (en) Transparent electroconductive film and manufacturing method therefor
KR102581899B1 (en) Transparent electrodes and electronic devices including the same
JP6637565B2 (en) Light transmitting conductive film
KR101809296B1 (en) Transparent electode and electronic device comprising the same
TW201505040A (en) Transparent electroconductive film and manufacturing method therefor
WO2020031632A1 (en) Light-transmitting conductive film and light control film
JP6866104B2 (en) Conductors, their manufacturing methods, and devices containing them
KR20180012730A (en) Transparent conductive film
JP2022176332A (en) Electrochromic lighting control member, light-transmissive conductive glass film, and electrochromic lighting control element
KR101991047B1 (en) Conductive laminate, method for manufacturing thereof, transparent electrode comprising thereof and electronic device comprising thereof
US10490317B2 (en) Conductive laminate and transparent electrode including same
KR20110021641A (en) Transparent conductive laminate
KR101999706B1 (en) Conductive structure body and electronic device comprising the same
KR20150135977A (en) Transparent electode and electronic device comprising the same
KR101892542B1 (en) Transparent electrode
KR101832521B1 (en) Transparent electode and electronic device comprising the same
KR101968215B1 (en) Conductive structure body and electronic device comprising the same
KR101816972B1 (en) Transparent electrode with TiO2/Ag/TiO2 multilayered structure and method for preparing the same
US9731997B2 (en) Multilayer heat rejection coating
KR102542171B1 (en) Flexible transparent conductive film, transparent electrode and transparent infrared radiation-cutting film comprising the same
TWI534005B (en) Polyester film and transparent electrode film using thereof
JP5270976B2 (en) Method for producing transparent conductive film
WO2019167900A1 (en) Transparent conductor, light control body and transparent heat generation body

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant