TWI726917B - Exposure apparatus and exposure method, and manufacturing method of flat panel display - Google Patents
Exposure apparatus and exposure method, and manufacturing method of flat panel display Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Length Measuring Devices By Optical Means (AREA)
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Abstract
控制系,係根據用以補償因複數個格子區域(RG)(標尺(152))、複數個讀頭(66a~66d)、以及基板保持具(34)之移動之至少一個而產生之包含編碼器系統之測量系之測量誤差的修正資訊、以及以測量系測量之位置資訊,控制基板保持具之驅動系,複數個讀頭分別在基板保持具於X軸方向之移動中,來自讀頭之測量光束從複數個格子區域(RG)之一個脫離,且移載至相鄰之另一格子區域(RG)。 The control system is based on a code generated by compensating for at least one of the movement of a plurality of grid regions (RG) (ruler (152)), a plurality of reading heads (66a~66d), and a substrate holder (34) The correction information of the measurement error of the measurement system of the device system and the position information measured by the measurement system are used to control the drive system of the substrate holder. A plurality of reading heads are from the reading head during the movement of the substrate holder in the X-axis direction. The measuring beam is separated from one of the plurality of grid areas (RG) and transferred to another adjacent grid area (RG).
Description
本發明係關於曝光裝置及曝光方法、以及平面顯示器製造方法,更詳言之,係關於用在製造液晶顯示元件等微型元件之微影製程之曝光裝置及曝光方法、以及使用曝光裝置或曝光方法之平面顯示器製造方法。 The present invention relates to an exposure device, an exposure method, and a flat-panel display manufacturing method. More specifically, it relates to an exposure device and an exposure method used in the lithography process for manufacturing micro-elements such as liquid crystal display elements, and the use of an exposure device or exposure method The manufacturing method of flat panel display.
以往,在製造液晶顯示元件、半導體元件(積體電路等)等之電子元件(微型元件)之微影製程中,係使用步進掃描方式之曝光裝置(所謂掃描步進機(亦稱為掃描機))等,其係一邊使光罩(photomask)或標線片(以下總稱為「光罩」)與玻璃板或晶圓(以下總稱為「基板」)沿著既定掃描方向(SCAN方向)同步移動,一邊將形成在以能量光束照明之光罩之圖案轉印至基板上。 In the past, in the lithography process for manufacturing electronic components (micro-components) such as liquid crystal display elements and semiconductor components (integrated circuits, etc.), a step-and-scan exposure device (so-called scanning stepper (also called scanning Machine)), etc., which is to make the photomask or reticle (hereinafter collectively referred to as "mask") and glass plate or wafer (hereinafter collectively referred to as "substrate") along the predetermined scanning direction (SCAN direction) Move synchronously, while transferring the pattern formed on the photomask illuminated by the energy beam to the substrate.
作為此種曝光裝置,已知有使用基板載台裝置所具有之棒反射鏡(長條之鏡)求出曝光對象基板在水平面內之位置資訊的光干渉儀系統者(參照例如專利文獻1)。 As this type of exposure device, there is known a light interference instrument system that uses a rod mirror (a long mirror) included in the substrate stage device to obtain position information of the substrate to be exposed in the horizontal plane (see, for example, Patent Document 1) .
此處,在使用光干渉儀系統求出基板之位置資訊之情形,無法忽視所謂空氣搖晃之影響。又,上述空氣搖晃之影響,雖能藉由使用編碼器系統來減低,但因近年基板之大型化,係難以準備能涵蓋基板全移動 範圍的標尺。 Here, in the case of using the optical interference instrument system to obtain the position information of the substrate, the influence of the so-called air shaking cannot be ignored. In addition, although the influence of the above-mentioned air shaking can be reduced by using an encoder system, it is difficult to prepare to cover the entire movement of the substrate due to the increase in the size of the substrate in recent years. Ruler of scope.
先行技術文獻Advanced technical literature
[專利文獻1]美國專利申請公開第2010/0018950 [Patent Document 1] U.S. Patent Application Publication No. 2010/0018950
根據本發明之第1態樣,提供一種曝光裝置,係透過投影光學系以照明光使基板曝光,其具備:移動體,配置於前述投影光學系下方,保持前述基板;驅動系,能在與前述投影光學系之光軸正交之既定平面內彼此正交之第1、第2方向移動前述移動體;測量系,設置成在前述第1方向上複數個格子區域彼此分離配置之格子構件、與對前述格子構件分別照射測量光束且能在前述第2方向移動之複數個第1讀頭中之一方設於前述移動體,且前述格子構件與前述複數個第1讀頭中之另一方與前述移動體對向,前述測量系具有測量在前述第2方向之前述複數個第1讀頭之位置資訊之測量裝置,根據前述複數個第1讀頭中前述測量光束照射於前述複數個格子區域中之至少一個格子區域之至少三個第1讀頭之測量資訊與前述測量裝置之測量資訊,測量至少在前述既定平面內之3自由度方向之前述移動體之位置資訊;以及控制系,根據用以補償因前述格子構件、前述複數個第1讀頭及前述移動體之移動之至少一個而產生之前述測量系之測量誤差的修正資訊、以及以前述測量系測量之位置資訊,控制前述驅動系;前述複數個第1讀頭,分別在前述移動體往前述第1方向之移動中前述測量光束從前述複數個格子區域中之一個格子區域脫離、且移至與前述一個 格子區域相鄰之另一格子區域。 According to a first aspect of the present invention, there is provided an exposure apparatus that exposes a substrate with illumination light through a projection optical system, and includes: a movable body arranged under the projection optical system to hold the substrate; The moving body is moved in the first and second directions orthogonal to each other in a predetermined plane where the optical axis of the projection optical system is orthogonal to each other; the measurement system is provided as a lattice member in which a plurality of lattice areas are separated from each other in the first direction, And one of the plurality of first heads that respectively irradiate the measuring beam to the lattice member and can move in the second direction is provided in the movable body, and the other of the lattice member and the plurality of first read heads and The moving body is opposed to the moving body, and the measuring device has a measuring device for measuring the position information of the plurality of first reading heads in the second direction, and the measuring beam is irradiated on the plurality of grid areas according to the plurality of first reading heads The measurement information of at least three first reading heads in at least one grid area and the measurement information of the aforementioned measuring device measure the position information of the aforementioned moving body at least in the direction of 3 degrees of freedom in the aforementioned predetermined plane; and the control system, according to Correction information used to compensate for the measurement error of the measurement system generated by at least one of the movement of the grid member, the plurality of first reading heads, and the moving body, and the position information measured by the measurement system to control the drive System; the plurality of first reading heads, respectively, the measuring beam is separated from one of the plurality of grid regions during the movement of the movable body in the first direction, and moves to the aforementioned one Another grid area adjacent to the grid area.
根據本發明之第2態樣,提供一種曝光裝置,係透過投影光學系以照明光使基板曝光,其具備:移動體,配置於前述投影光學系下方,保持前述基板;驅動系,能在與前述投影光學系之光軸正交之既定平面內彼此正交之第1、第2方向移動前述移動體;測量系,設置成在前述第1方向上複數個格子區域彼此分離配置之格子構件與對前述格子構件分別照射測量光束且能在前述第2方向移動之複數個第1讀頭中之一方設於前述移動體,且前述格子構件與前述複數個第1讀頭中之另一方與前述移動體對向,前述測量系具有測量裝置,此測量裝置設置成於前述複數個第1讀頭設有標尺構件與第2讀頭中之一方且前述標尺構件與前述第2讀頭中之另一方對向於前述複數個第1讀頭、透過前述第2讀頭對前述標尺構件照射測量光束以測量在前述第2方向之前述複數個第1讀頭之位置資訊,根據前述複數個第1讀頭中前述測量光束照射於前述複數個格子區域中之至少一個格子區域之至少三個第1讀頭之測量資訊與前述測量裝置之測量資訊,測量至少在前述既定平面內之3自由度方向之前述移動體之位置資訊;以及控制系,根據用以補償因前述標尺構件與前述第2讀頭中之至少一方而產生之前述測量裝置之測量誤差的修正資訊、以及以前述測量系測量之位置資訊,控制前述驅動系;前述複數個第1讀頭,分別在前述移動體往前述第1方向之移動中前述測量光束從前述複數個格子區域中之一個格子區域脫離且移至與前述一個格子區域相鄰之另一格子區域。 According to a second aspect of the present invention, there is provided an exposure device that exposes a substrate with illumination light through a projection optical system, and includes: a movable body disposed under the projection optical system to hold the substrate; The moving body is moved in the first and second directions orthogonal to each other in a predetermined plane where the optical axis of the projection optical system is orthogonal to each other; the measurement system is arranged such that a plurality of lattice regions are arranged separately from each other in the first direction and the lattice member and One of the plurality of first heads that are respectively irradiated with a measuring beam and movable in the second direction to the lattice member is provided in the movable body, and the other of the lattice member and the plurality of first read heads is the same as the foregoing The moving body is opposite, the aforementioned measuring system has a measuring device, and the measuring device is arranged such that one of the scale member and the second reading head is provided on the plurality of first reading heads, and the other of the scale member and the second reading head is provided. One side is opposed to the plurality of first reading heads, and irradiating the measuring beam to the scale member through the second reading head to measure the position information of the plurality of first reading heads in the second direction, according to the plurality of first reading heads. The measurement information of at least three first reading heads in which the measurement beam irradiates at least one of the plurality of grid areas and the measurement information of the measurement device in the reading head are irradiated to at least 3 degrees of freedom directions in the predetermined plane. The position information of the moving body; and the control system, based on the correction information used to compensate for the measurement error of the measurement device generated by at least one of the scale member and the second reading head, and the measurement system The position information controls the drive system; the plurality of first reading heads, respectively, when the moving body moves in the first direction, the measuring beam is separated from one of the plurality of grid areas and moved to the same Another grid area adjacent to the grid area.
根據本發明之第3態樣,提供一種平面顯示器製造方法,其包含:使用第1態樣之曝光裝置或第2態樣之曝光裝置使基板曝光之動作; 以及使曝光後之基板顯影之動作。 According to a third aspect of the present invention, there is provided a method for manufacturing a flat panel display, which includes: using the exposure device of the first aspect or the exposure device of the second aspect to expose a substrate; And the action of developing the exposed substrate.
根據本發明之第4態樣,提供一種曝光方法,係透過投影光學系以照明光使基板曝光,其包含:藉由設置成在與前述投影光學系之光軸正交之既定平面內之第1方向上複數個格子區域彼此分離配置之格子構件與對前述格子構件分別照射測量光束且能在前述既定平面內與前述第1方向正交之第2方向移動之複數個第1讀頭中之一方設於保持前述基板之前述移動體並且前述格子構件與前述複數個第1讀頭中之另一方與前述移動體對向、具有測量在前述第2方向之前述複數個第1讀頭之位置資訊之測量裝置的測量系,根據前述複數個第1讀頭中前述測量光束照射於前述複數個格子區域中之至少一個格子區域之至少三個第1讀頭之測量資訊與前述測量裝置之測量資訊,測量至少在前述既定平面內之3自由度方向之前述移動體之位置資訊的動作;以及根據用以補償因前述格子構件、前述複數個第1讀頭、以及前述移動體之移動之至少一個而產生之前述測量系之測量誤差的修正資訊、以及以前述測量系測量之位置資訊,使前述移動體移動的動作;前述複數個第1讀頭,分別在前述移動體往前述第1方向之移動中,前述測量光束從前述複數個格子區域中之一個格子區域脫離、且移至與前述一個格子區域相鄰之另一格子區域。 According to a fourth aspect of the present invention, there is provided an exposure method that exposes a substrate with illumination light through a projection optical system, which includes: A grid member in which a plurality of grid regions are separated from each other in the 1 direction and one of a plurality of first heads that respectively irradiate the grid member with a measuring beam and can move in a second direction orthogonal to the first direction in the predetermined plane One is provided on the movable body that holds the substrate, and the lattice member and the other of the plurality of first heads are opposed to the movable body, and have the positions of the plurality of first heads measuring in the second direction The measurement of the information measuring device is based on the measurement information of at least three first reading heads of the plurality of first reading heads irradiated on at least one of the plurality of grid areas by the measuring beams and the measurement of the measuring device Information, measuring the motion of the position information of the moving body at least in the direction of 3 degrees of freedom in the predetermined plane; and according to at least compensation for the movement of the lattice member, the plurality of first reading heads, and the moving body One generated correction information for the measurement error of the measurement system and the movement of the moving body based on the position information measured by the measurement system; the plurality of first reading heads respectively move the moving body in the first direction During the movement, the measuring beam is separated from one of the plurality of grid areas and moved to another grid area adjacent to the one grid area.
根據本發明之第5態樣,提供一種曝光方法,係透過投影光學系以照明光使基板曝光,其包含:藉由設置成在與前述投影光學系之光軸正交之既定平面內之第1方向上複數個格子區域彼此分離配置之格子構件與對前述格子構件分別照射測量光束且能在前述既定平面內與前述第1方向正交之第2方向移動之複數個第1讀頭中之一方設於保持前述基板之 前述移動體並且前述格子構件與前述複數個第1讀頭中之另一方與前述移動體對向進而設成於前述複數個第1讀頭設有標尺構件與第2讀頭之一方且前述標尺構件與第2讀頭之另一方與前述複數個第1讀頭對向、具有透過前述第2讀頭對前述標尺構件照射測量光束以測量在前述第2方向之前述複數個第1讀頭之位置資訊之測量裝置的測量系,根據前述複數個第1讀頭中前述測量光束照射於前述複數個格子區域中之至少一個格子區域之至少三個第1讀頭之測量資訊與前述測量裝置之測量資訊,測量至少在前述既定平面內之3自由度方向之前述移動體之位置資訊的動作;以及根據用以補償因前述格子構件與前述第2讀頭之至少一方而產生之前述測量裝置之測量誤差的修正資訊、以及以前述測量系測量之位置資訊,使前述移動體移動的動作;前述複數個第1讀頭,分別在前述移動體往前述第1方向之移動中,前述測量光束從前述複數個格子區域中之一個格子區域脫離、且移至與前述一個格子區域相鄰之另一格子區域。 According to a fifth aspect of the present invention, there is provided an exposure method that exposes a substrate with illumination light through a projection optical system, which includes: A grid member in which a plurality of grid regions are separated from each other in the 1 direction and one of a plurality of first heads that respectively irradiate the grid member with a measuring beam and can move in a second direction orthogonal to the first direction in the predetermined plane One side is set to hold the aforementioned substrate The movable body and the lattice member and the other of the plurality of first reading heads are opposed to the movable body and are further arranged such that one of the scale members and the second reading head is provided on the plurality of first reading heads and the scale The other of the member and the second head is opposed to the plurality of first heads, and has a measuring beam that irradiates the scale member through the second head to measure the number of the first heads in the second direction. The measurement of the position information measuring device is based on the measurement information of the at least three first reading heads of the plurality of first reading heads irradiated on at least one of the plurality of grid areas by the measuring beams and the measurement information of the measuring device Measuring information, measuring the action of the position information of the moving body in at least 3 degrees of freedom in the predetermined plane; and according to the measuring device used to compensate for at least one of the lattice member and the second reading head The correction information of the measurement error and the movement of the moving body based on the position information measured by the measurement system; the plurality of first reading heads respectively move the moving body in the first direction, and the measuring beam moves from One of the plurality of grid regions is separated from and moved to another grid region adjacent to the one grid region.
根據本發明之第6態樣,提供一種平面顯示器製造方法,其包含:使用第4態樣之曝光方法或第5態樣之曝光方法使基板曝光之動作;以及使曝光後之基板顯影之動作。 According to a sixth aspect of the present invention, there is provided a method for manufacturing a flat panel display, which includes: an action of exposing a substrate using the exposure method of the fourth aspect or the exposure method of the fifth aspect; and an action of developing the exposed substrate .
10‧‧‧液晶曝光裝置 10‧‧‧LCD Exposure Device
14‧‧‧光罩載台裝置 14‧‧‧Mask stage device
20‧‧‧基板載台裝置 20‧‧‧Substrate stage device
34‧‧‧基板保持具 34‧‧‧Substrate holder
40‧‧‧光罩保持具 40‧‧‧Mask holder
44‧‧‧讀頭單元 44‧‧‧Reading head unit
46‧‧‧標尺 46‧‧‧Ruler
48‧‧‧光罩編碼器系統 48‧‧‧Mask Encoder System
50‧‧‧基板編碼器系統 50‧‧‧Substrate encoder system
52‧‧‧標尺 52‧‧‧ Ruler
56‧‧‧標尺 56‧‧‧Ruler
60‧‧‧讀頭單元 60‧‧‧Reading head unit
90‧‧‧主控制裝置 90‧‧‧Main control device
M‧‧‧光罩 M‧‧‧Mask
P‧‧‧基板 P‧‧‧Substrate
圖1係概略顯示第1實施形態之液晶曝光裝置之構成的圖。 Fig. 1 is a diagram schematically showing the structure of the liquid crystal exposure apparatus of the first embodiment.
圖2係顯示圖1之液晶曝光裝置所具備之基板載台裝置一例的圖。 Fig. 2 is a diagram showing an example of a substrate stage device included in the liquid crystal exposure apparatus of Fig. 1.
圖3(A)係概略顯示光罩編碼器系統之構成的圖,圖3(B)係光罩編碼器系統之局部(圖3(A)之A部)放大圖。 Fig. 3(A) is a diagram schematically showing the structure of the mask encoder system, and Fig. 3(B) is an enlarged view of a part of the mask encoder system (part A of Fig. 3(A)).
圖4(A)係概略顯示基板編碼器系統之構成的圖,圖4(B)及圖4(C)係基板編碼器系統之局部(圖4(A)之B部)放大圖。 Fig. 4(A) is a diagram schematically showing the structure of the substrate encoder system, and Figs. 4(B) and 4(C) are enlarged views of a part of the substrate encoder system (part B of Fig. 4(A)).
圖5係基板編碼器系統所具有之讀頭單元之側視圖。 Figure 5 is a side view of the read head unit of the substrate encoder system.
圖6係圖5之C-C線剖面圖。 Fig. 6 is a cross-sectional view taken along the line C-C in Fig. 5.
圖7係基板編碼器系統之概念圖。 Figure 7 is a conceptual diagram of the substrate encoder system.
圖8係顯示以液晶曝光裝置之控制系為中心構成之主控制裝置之輸出入關係的方塊圖。 Fig. 8 is a block diagram showing the input-output relationship of the main control device with the control system of the liquid crystal exposure device as the center.
圖9(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其1),圖9(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其1)。 Fig. 9(A) is a diagram showing the operation of the mask encoder system during the exposure operation (Part 1), and Fig. 9(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (Part 1).
圖10(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其2),圖10(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其2)。 Fig. 10(A) is a diagram showing the operation of the mask encoder system during the exposure operation (No. 2), and Fig. 10(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (No. 2).
圖11(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其3),圖11(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其3)。 Fig. 11(A) is a diagram showing the operation of the mask encoder system during the exposure operation (No. 3), and Fig. 11(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (No. 3).
圖12(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其4),圖12(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其4)。 Fig. 12(A) is a diagram showing the operation of the mask encoder system during exposure operation (No. 4), and Fig. 12(B) is a diagram showing the operation of the substrate encoder system during exposure operation (No. 4).
圖13(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其5),圖13(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其5)。 Fig. 13(A) is a diagram showing the operation of the mask encoder system during exposure operation (No. 5), and Fig. 13(B) is a diagram showing the operation of the substrate encoder system during exposure operation (No. 5).
圖14(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其6),圖14(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其6)。 Fig. 14(A) is a diagram showing the operation of the mask encoder system during the exposure operation (No. 6), and Fig. 14(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (No. 6).
圖15(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其7),圖15(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其7)。 Fig. 15(A) is a diagram showing the operation of the mask encoder system during the exposure operation (No. 7), and Fig. 15(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (No. 7).
圖16(A)係顯示曝光動作時之光罩編碼器系統之動作的圖(其8), 圖16(B)係顯示曝光動作時之基板編碼器系統之動作的圖(其8)。 Figure 16 (A) is a diagram showing the action of the mask encoder system during exposure action (No. 8), Fig. 16(B) is a diagram showing the operation of the substrate encoder system during the exposure operation (No. 8).
圖17係將第2實施形態之液晶曝光裝置所具有之基板保持具及基板編碼器系統之一對讀頭單元與投影光學系一起顯示之俯視圖。 Fig. 17 is a plan view showing the head unit and the projection optical system of one of the substrate holder and the substrate encoder system included in the liquid crystal exposure apparatus of the second embodiment.
圖18(A)及圖18(B),係用以說明進行基板保持具之位置測量時之基板保持具在X軸方向之移動範圍的圖。 18(A) and 18(B) are diagrams for explaining the moving range of the substrate holder in the X-axis direction when the position measurement of the substrate holder is performed.
圖19(A)~圖19(D),係用以說明第2實施形態中,基板保持具移動於X軸方向之過程中之一對讀頭單元與標尺之位置關係之狀態遷移中之第1狀態~第4狀態的圖。 19 (A) ~ FIG. 19 (D) are used to illustrate the second embodiment, the substrate holder is moved in the X-axis direction, a pair of the positional relationship between the head unit and the scale of the state transition Figures from state 1 to state 4.
圖20(A)~圖20(C),係用以說明以第2實施形態之液晶曝光裝置進行之測量基板保持具之位置資訊之基板編碼器系統之讀頭之切換時之接續處理的圖。 Fig. 20(A)~Fig. 20(C) are diagrams for explaining the connection process when the read head of the substrate encoder system for measuring the position information of the substrate holder performed by the liquid crystal exposure apparatus of the second embodiment is switched. .
圖21係將第3實施形態之液晶曝光裝置所具有之基板保持具及基板編碼器系統之一對讀頭單元與投影光學系一起顯示的俯視圖。 21 is a plan view showing the head unit and the projection optical system of one of the substrate holder and the substrate encoder system included in the liquid crystal exposure apparatus of the third embodiment.
圖22係用以說明第4實施形態之液晶曝光裝置之特徵構成的圖。 Fig. 22 is a diagram for explaining the characteristic structure of the liquid crystal exposure apparatus of the fourth embodiment.
圖23係顯示相對縱搖量θ y=α中之Z位置之變化的編碼器之測量誤差的圖表。 Figure 23 is a graph showing the measurement error of the encoder relative to the change in the Z position in the pitch θ y=α.
《第1實施形態》 "First Embodiment"
以下,使用圖1~圖16(B)說明第1實施形態。 Hereinafter, the first embodiment will be described using FIGS. 1 to 16(B).
圖1係概略顯示第1實施形態之液晶曝光裝置10之構成。液晶曝光裝置10,例如係以用於液晶顯示裝置(平面顯示器)等之矩形(角型)之玻璃基板P(以下單稱為基板P)作為曝光對象物之步進掃描方式之
投影曝光裝置、即所謂掃描機。
FIG. 1 schematically shows the structure of the liquid
液晶曝光裝置10,具有照明系12、保持形成有電路圖案等之光罩M之光罩載台裝置14、投影光學系16、裝置本體18、保持於表面(圖1中為朝向+Z側之面)塗布有抗蝕劑(感應劑)之基板P之基板載台裝置20、以及此等之控制系等。以下,將掃描曝光時相對照明光IL分別掃描光罩M與基板P之方向作為與投影光學系16之光軸(在本實施形態中係與照明系12之光軸一致)正交之既定平面(XY平面,在圖1中為水平面)內之X軸方向,將在水平面內與X軸正交之方向作為Y軸方向,將與X軸及Y軸正交之方向作為Z軸方向,將繞X軸、Y軸、以及Z軸之旋轉方向分別作為θ x、θ y、以及θ z方向來進行說明。又,將在X軸、Y軸、以及Z軸方向之位置分別作為X位置、Y位置、以及Z位置來進行說明。
The liquid
照明系12,係與例如美國專利第5,729,331號說明書等所揭示之照明系同樣地構成。照明系12,係將從未圖示之光源(例如水銀燈)射出之光分別透過未圖示之反射鏡、分光鏡、光閥、波長選擇濾光器、各種透鏡等,作為曝光用照明光(照明光)IL照射於光罩M。作為照明光IL,可使用包含例如i線(波長365nm)、g線(波長436nm)、以及h線(波長405nm)之至少一個之光(在本實施形態中為上述i線、g線、h線之合成光)。照明系12,具有對在Y軸方向位置不同之複數個照明區域分別照射照明光IL之複數個光學系,此複數個光學系係與後述之投影光學系16之複數個光學系相同數目。
The
光罩載台裝置14,包含例如以真空吸附保持光罩M之光罩保持具(滑件,亦稱為可動構件)40、用以將光罩保持具40往掃描方向(X
軸方向)以既定長行程驅動且往Y軸方向及θ z方向適當地微幅驅動之光罩驅動系91(圖1中未圖示。參照圖8)、以及用以測量光罩保持具40至少在XY平面內之位置資訊(包含X軸及Y軸方向與θ z方向之3自由度方向之位置資訊,θ z方向為旋轉(偏搖)資訊)。以下同)之光罩位置測量系。光罩保持具40,係由例如美國專利申請公開第2008/0030702號說明書所揭示之形成有俯視矩形之開口部之框狀構件構成。光罩保持具40,係透過例如空氣軸承(未圖示)載置於固定在裝置本體18之一部分亦即上架台部18a之一對光罩導件42上。光罩驅動系91,包含例如線性馬達(未圖示)。以下雖係以移動光罩保持具40者進行說明,但亦可係移動具有光罩M之保持部之平台或載台者。亦即,亦可不一定要將保持光罩之光罩保持具與光罩平台或光罩載台分別設置,亦可藉由真空吸附等將光罩保持於光罩平台或光罩載台上,在此情形下,保持光罩之光罩平台或光罩載台係移動於XY平面內之3自由度方向。
The
光罩位置測量系具備光罩編碼器系統48,其設置成一對編碼器讀頭單元44(以下單稱為讀頭單元44)與透過讀頭單元44照射測量光束之複數個編碼器標尺46(圖1中重疊於紙面深度方向。參照圖3(A))之一方設於光罩保持具40、編碼器讀頭44與複數個編碼器標尺46之另一方與光罩保持具40對向。本實施形態中,設置成編碼器讀頭44透過編碼器基座43設於上架台部18a,複數個編碼器標尺46於光罩保持具40之下面側設置成分別與一對編碼器讀頭44對向。此外,亦可非上架台部18a,而例如於投影光學系16之上端側設置編碼器讀頭44。關於光罩編碼器系統48之構成,將於後述詳細說明。
The reticle position measurement system is equipped with a
投影光學系(投影系)16,支承於上架台部18a,配置於光罩載台裝置14之下方。投影光學系16,係例如與美國專利第6,552,775號說明書等所揭示之投影光學系相同構成之所謂多透鏡投影光學系,具備例如以兩側遠心之等倍系形成正立正像之複數個(本實施形態中為例如11個。參照圖3(A))光學系(投影光學系)。
The projection optical system (projection system) 16 is supported by the
液晶曝光裝置10,在藉由來自照明系12之照明光IL照明光罩M上之照明區域後,藉由通過光罩M之照明光,透過投影光學系16將其照明區域內之光罩M之電路圖案之投影像(部分正立像),形成於與基板P上之照明區域共軛之照明光之照射區域(曝光區域)。接著,相對照明區域(照明光IL)使光罩M相對移動於掃描方向,且相對曝光區域(照明光IL)使基板P相對移動於掃描方向,藉此進行基板P上之一個照射區域之掃描曝光,而於該照射區域轉印形成在光罩M之圖案。
After the liquid
裝置本體(本體部,亦稱為框架構造等)18,係支承上述光罩載台裝置14、投影光學系16、以及基板載台裝置20,透過複數個防振裝置19而設置於潔淨室之地11上。裝置本體18,係與例如美國專利申請公開第2008/0030702號說明書所揭示之裝置本體相同之構成。本實施形態中,具有支承上述投影光學系16之上架台部18a(亦稱為光學平台等)、配置基板載台裝置20之一對下架台部18b(在圖1中由於重疊於紙面深度方向,因此其中一方未圖示。參照圖2。)、以及一對中架台部18c。
The device body (main body, also called frame structure, etc.) 18 supports the above-mentioned
基板載台裝置20,係用以在掃描曝光中,將基板P相對於透過投影光學系16投影之光罩圖案之複數個部分像(曝光用光IL)高精度地定位者,將基板P驅動於6自由度方向(X軸、Y軸及Z軸方向與θ x、
θ y及θ z方向)。基板載台裝置20之構成雖無特別限定,但能使用如例如美國專利申請公開第2008/129762號說明書、或者美國專利申請公開第2012/0057140號說明書等所揭示之、包含門型之二維粗動載台與相對該二維粗動載台被微幅驅動之微動載台之所謂粗微動構成之載台裝置。此情形下,能藉由粗動載台將基板P移動於水平面內之3自由度方向,且藉由微動載台將基板P微動於6自由度方向。
The
圖2係顯示用在本實施形態之液晶曝光裝置10之所謂粗微動構成之基板載台裝置20之一例。基板載台裝置20具備一對基座框架22、Y粗動載台24、X粗動載台26、重量消除裝置28、Y步進導件30、微動載台32。
FIG. 2 shows an example of a
基座框架22由延伸於Y軸方向之構件構成,在與裝置本體18在振動上絶緣之狀態下設置於地11上。又,於裝置本體18之一對下架台部18b之間配置有輔助基座框架23。Y粗動載台24,具有架設於一對基座框架22間之一對(圖2中其中一方未圖示)X柱25。前述輔助基座框架23,係從下方支承X柱25之長度方向中間部。Y粗動載台24,係透過用以將基板P驅動於6自由度方向之基板驅動系93(圖2中未圖示。參照圖8)之一部分亦即複數個Y線性馬達而在一對基座框架22上被往Y軸方向以既定長行程驅動。X粗動載台26,在架設於一對X柱25間之狀態下載置於Y粗動載台24上。X粗動載台26,係透過基板驅動系93之一部分亦即複數個X線性馬達在Y粗動載台24上被往X軸方向以既定長行程驅動。又,X粗動載台26,其相對於Y粗動載台24之往Y軸方向之相對移動被以機械方式限制,與Y粗動載台24一體地移動於Y軸方向。
The
重量消除裝置28插入於一對X柱25間且以機械方式連接於X粗動載台26。藉此,重量消除裝置28,係與X粗動載台26一體地往X軸及/或Y軸方向以既定長行程移動。Y步進導件30由延伸於X軸方向之構件構成,以機械方式連接於Y粗動載台24。藉此,Y步進導件30,係與Y粗動載台24一體地往Y軸方向以既定長行程移動。上述重量消除裝置28,透過複數個空氣軸承載置於Y步進導件30上。重量消除裝置28,在X粗動載台26僅移動於X軸方向之情形,係在靜止狀態之Y步進導件30上往X軸方向移動,在X粗動載台26移動於Y軸方向之情形(亦包含伴隨往X軸方向之移動之情形),係與Y步進導件30一體地(以不從Y步進導件30脫落之方式)往Y軸方向移動。
The
微動載台32,由俯視矩形之板狀(或者箱形)構件構成,在中央部透過球面軸承裝置29相對XY平面擺動自如之狀態下被重量消除裝置28從下方支承。於微動載台32之上面固定有基板保持具34,於該基板保持具34上載置基板P。此外,亦可不一定要將保持基板之基板保持具與設有基板之保持部之平台或載台、此處係與微動載台32分別設置,亦可藉由真空吸附等將基板保持於平台或載台上。微動載台32,包含X粗動載台26所具有之固定子與微動載台32所具有之可動子,藉由構成上述基板驅動系93(圖2中未圖示。參照圖8)之一部分之複數個線性馬達33(例如音圈馬達),相對X粗動載台26被微幅驅動於6自由度方向。又,微動載台32,藉由透過上述複數個線性馬達33而從X粗動載台26被賦予之推力,而與該X粗動載台26一起往X軸及/或Y軸方向以既定長行程移動。以上說明之基板載台裝置20之構成(不過,測量系除外),揭示於例如美國
專利申請公開第2012/0057140號說明書。
The
又,基板載台裝置20,具有用以測量微動載台32(亦即基板保持具34及基板P)之6自由度方向之位置資訊之基板位置測量系。基板位置測量系,如圖8所示,包含用以求出基板P之Z軸、θ x、θ y方向(以下稱為Z傾斜方向)之位置資訊之Z傾斜位置測量系98及用以求出基板P在XY平面內之3自由度方向之位置資訊之基板編碼器系統50。Z傾斜位置測量系98,如圖2所示具備複數個Z感測器36,該Z感測器36包含安裝於微動載台32下面之探針36a與安裝於重量消除裝置28之靶36b。複數個Z感測器36,例如繞與通過微動載台32中心之Z軸平行之軸線以既定間隔配置有例如四個(至少三個)。主控制裝置90(參照圖8),係根據上述複數個Z感測器36之輸出,求出微動載台32之Z位置資訊、以及θ x及θ y方向之旋轉量資訊。關於包含上述Z感測器36在內之Z傾斜位置測量系98之構成,詳細揭示於例如美國專利申請公開第2010/0018950號說明書中。基板編碼器系統50之構成留待後述。
In addition, the
其次,使用圖3(A)及圖3(B)說明光罩編碼器系統48之構成。如圖3(A)示意地顯示,於光罩保持具40中光罩M(更詳言之係用以收容光罩M之未圖示之開口部)之+Y側及-Y側之區域,分別配置有複數個編碼器標尺46(雖亦稱為格子構件、格子部、柵構件等,以下單稱為標尺46)。此外,為了容易理解,圖3(A)中,複數個標尺46雖以實線圖示,且圖示成看似配置於光罩保持具40之上面,但複數個標尺46,實際上係如圖1所示,以複數個標尺46各自下面之Z位置與光罩M之下面(圖案面)之Z位置一致之方式配置於光罩保持具40之下面側。複數個標
尺46分別具有形成有反射型二維格子或排列方向(週期方向)不同之(例如正交之)兩個反射型一維格子之格子區域(格子部),在光罩保持具40下面側於Y軸方向分別在光罩M之載置區域(包含前述開口部)兩側,以格子區域於X軸方向彼此分離配置之方式設有複數個標尺46。此外,雖亦可在X軸及Y軸方向亦以涵蓋標尺46全區之方式形成格子,但由於在標尺46端部難以精度良好地形成格子,因此在本實施形態中係以在標尺46中格子區域周圍成為餘白部之方式形成格子。因此,格子區域之間隔較在X軸方向相鄰之一對標尺46之間隔寬,在測量光束照射於格子區域外之期間成為無法進行位置測量之非測量期間(亦稱為非測量區間,以下總稱為非測量期間)。
Next, the configuration of the
本實施形態之光罩保持具40中,係於光罩M之載置區域之+Y側及-Y側之區域,分別在X軸方向以既定間隔配置有例如三個標尺46。亦即,光罩保持具40合計具有例如六個標尺46。複數個標尺46之各個,除了在光罩M之+Y側與-Y側配置成紙面上下對稱這點以外,其餘則實質相同。標尺46由例如以石英玻璃形成之延伸於X軸方向之俯視矩形之板狀(帶狀)構件構成。光罩保持具40,例如以陶瓷形成,複數個標尺46固定於光罩保持具40。本實施形態中,亦可取代在X軸方向彼此分離配置之複數個標尺46而使用一個(單一)標尺作為光罩保持具用標尺使用。此情形下,格子區域雖可為一個,但亦可將複數個格子區域在X軸方向分離而形成於一個標尺。
In the
如圖3(B)所示,於標尺46下面(本實施形態中為朝向-Z側之面)中寬度方向一側(在圖3(B)中為-Y側)之區域形成有X標
尺47x。又,於標尺46下面中寬度方向另一側(在圖3(B)中為+Y側)之區域形成有Y標尺47y。X標尺47x,係藉由具有於X軸方向以既定節距形成之(以X軸方向作為週期方向)延伸於Y軸方向之複數個格子線的反射型繞射格子(X光柵)構成。同樣地,Y標尺47y,係藉由具有於Y軸方向以既定節距形成之(以Y軸方向作為週期方向)延伸於X軸方向之複數個格子線的反射型繞射格子(Y光柵)構成。本實施形態之X標尺47x及Y標尺47y中,複數個格子線,係以例如10nm以下之間隔形成。此外,圖3(A)及圖3(B)中,為了圖示方便,格子間之間隔(節距)圖示成較實際寬廣許多。其他圖亦同。
As shown in FIG. 3(B), an X mark is formed in an area on the width direction side (-Y side in FIG. 3(B)) under the scale 46 (the surface facing the -Z side in this embodiment).
又,如圖1所示,於上架台部18a上面固定有一對編碼器基座43。一對編碼器基座43之其中一方配置於+X側之光罩導件42之-X側,另一方則配置於-X側之光罩導件42之+X側(亦即一對光罩導件42之間之區域)。又,上述投影光學系16之一部分配置於一對編碼器基座43之間。編碼器基座43如圖3(A)所示,由延伸於X軸方向之構件構成。於一對編碼器基座43各自之長度方向中央部固定有編碼器讀頭單元44(以下單稱為讀頭單元44)。亦即,讀頭單元44,係透過編碼器基座43固定於裝置本體18(參照圖1)。一對讀頭單元44,除了在光罩M之+Y側與-Y側配置成於紙面上下對稱這點以外,其餘係實質相同,因此以下僅針對其中一方(-Y側)說明。
Moreover, as shown in FIG. 1, a pair of
如圖3(B)所示,讀頭單元44,具有對配置於X軸方向之複數個標尺46之至少一個照射之測量光束之位置在X軸及Y軸方向之至少一方不同的複數個讀頭,具有由俯視矩形之板狀構件構成之單元基座45。
於單元基座45,固定有以較在X軸方向相鄰之一對X標尺47x(格子區域)之間隔寬之間隔照射測量光束且彼此分離配置之一對X讀頭49x、以及以較在X軸方向相鄰之一對Y標尺47y(格子區域)之間隔寬之間隔照射測量光束且彼此分離配置之一對Y讀頭49y。亦即,光罩編碼器系統48,係於例如Y軸方向之光罩保持具40之光罩M載置區域兩側分別各具有一對X讀頭49x而具有合計四個,且於例如Y軸方向之光罩M載置區域兩側分別各具有一對Y讀頭49y而具有合計四個。此外,一對X讀頭49x或一對Y讀頭49y不需要分別較一對X標尺49x或一對Y標尺49y之間隔更寬地分離配置,亦可以與標尺間隔相同程度以下之間隔配置,或者亦可彼此接觸配置,扼要言之,只要以在X軸方向上一對測量光束較標尺間隔寬之間隔配置即可。又,圖3(B)中,雖一方之X讀頭49x與一方之Y讀頭49y收容於一個殼體內,另一方之X讀頭49x與另一方之Y讀頭49y收容於另一個殼體內,但上述一對X讀頭49x及一對Y讀頭49y亦可分別獨立配置。又,圖3(B)中,為了容易理解,雖圖示成一對X讀頭49x與一對Y讀頭49y配置於標尺46上方(+Z側),但實際上,一對X讀頭49x配置於X標尺47y下方,一對Y讀頭49y配置於Y標尺47y下方(參照圖1)。
As shown in FIG. 3(B), the
一對X讀頭49x及一對Y讀頭49y,係相對單元基座45固定成不會因例如因振動等使一對X讀頭49x(測量光束)之至少一方之位置(特別是測量方向(X軸方向)之位置)或讀頭(測量光束)間隔、以及一對Y讀頭49y(測量光束)之至少一方之位置(特別是測量方向(Y軸方向)之位置)或讀頭(測量光束)間隔變化。又,單元基座45本身,亦以一對X讀頭49x之位置或間隔及一對Y讀頭49y之位置或間隔不因例如溫
度變化等而變化之方式,以熱膨張率較標尺46低之(或者與標尺46同等之)材料形成。
A pair of X heads 49x and a pair of Y heads 49y are fixed relative to the
X讀頭49x及Y讀頭49y,例如係如美國專利申請公開第2008/0094592號說明書所揭示之所謂繞射干渉方式之編碼器讀頭,係對對應之標尺(X標尺47x、Y標尺47y)照射測量光束並接收來自該標尺之光束,藉此將光罩保持具40(亦即光罩M。參照圖3(A))之位移量資訊對主控制裝置90(參照圖8)供應。亦即,在光罩編碼器系統48,係藉由例如四個X讀頭49x及與該X讀頭49x對向之X標尺47x(依光罩保持具40之X位置而不同),構成用以求出光罩M在X軸方向之位置資訊之例如四個X線性編碼器92x(圖3(B)中未圖示。參照圖8),藉由例如四個Y讀頭49y及與該Y讀頭49y對向之Y標尺47y(依光罩保持具40之X位置而不同),構成用以求出光罩M在Y軸方向之位置資訊之例如四個Y線性編碼器92y(圖3(B)中未圖示。參照圖8)。本實施形態中,雖係使用XY平面內之不同之2方向(在本實施形態中係與X軸及Y軸方向一致)中之一方作為測量方向之讀頭,但亦可使用測量方向與X軸及Y軸方向中之一方不同之讀頭。例如,亦可使用將在XY平面內相對X軸或Y軸方向旋轉了45度之方向作為測量方向的讀頭。又,亦可取代XY平面內之不同之2方向中之一方作為測量方向之一維讀頭(X讀頭或Y讀頭),而使用例如以X軸及Y軸方向中之一方與Z軸方向之2方向作為測量方向之二維讀頭(XZ讀頭或YZ讀頭)。此情形下,在與上述3自由度方向(X軸及Y軸方向與θ z方向)不同之3自由度方向(包含Z軸方向與θ x及θ y方向,θ x方向為橫搖資訊,θ y方向縱搖資訊)之光罩保持具40之位置資訊亦能測量。
主控制裝置90,如圖8所示,例如根據四個X線性編碼器92x、及例如四個Y線性編碼器92y之輸出,以例如10nm以下之分解能力求出光罩保持具40(參照圖3(A))在X軸方向及Y軸方向之位置資訊。又,主控制裝置0,例如根據四個X線性編碼器92x(或者例如四個Y線性編碼器92y)中之至少兩個之輸出求出光罩保持具40之θ z位置資訊(旋轉量資訊)。主控制裝置90,係根據從上述光罩編碼器系統48之測量值求出之光罩保持具40在XY平面內之3自由度方向之位置資訊,使用光罩驅動系91控制光罩保持具40在XY平面內之位置。
The
此處,如圖3(A)所示,於光罩保持具40,如上所述般,在光罩M之+Y側及-Y側之區域分別於X方向以既定間隔配置有例如三個標尺46。又,至少在基板P之掃描曝光中,在讀頭單元44(一對X讀頭49x、一對Y讀頭49y(分別參照圖3(B))之全部)對向於在上述X軸方向以既定間隔配置之例如三個標尺46中最靠+X側之標尺46的位置與讀頭單元44對向於最靠-X側之標尺46之位置之間,光罩保持具40被驅動往X軸方向。此外,亦可在光罩M之交換動作與預對準動作之至少一方中,以從在X軸方向被照射照明光IL之照明區域分離之方式移動光罩保持具40,在讀頭單元44之至少一個讀頭從標尺46脫離之情形,係設置在X軸方向從讀頭單元44分離配置之至少一個讀頭,在交換動作或預對準動作中亦能持續進行光罩編碼器系統48對光罩保持具40之位置測量。
Here, as shown in FIG. 3(A), in the
接著,本實施形態之光罩載台裝置14係如圖3(B)所示,一個讀頭單元44所具有之一對X讀頭49x及一對Y讀頭49y各自之間隔,設定為較複數個標尺46中相鄰之一對標尺46之間隔寬。藉此,光罩編碼器
系統48中,一對X讀頭49x中隨時有至少一方對向於X標尺47x,且一對Y讀頭49y中之至少一方隨時對向於Y標尺47y。是以,光罩編碼器系統48,能將光罩保持具40(參照圖3(A))之位置資訊不中斷地供應至主控制裝置90(參照圖8)。
Next, the
具體說明之,例如在光罩保持具40(參照圖3(A))往+X側移動之情形,光罩編碼器系統48,係以下述順序移行至各狀態:一對讀頭49x之兩方對向於相鄰之一對X標尺47x中之+X側之X標尺47x之第1狀態(圖3(B)所示之狀態)、-X側之X讀頭49x對向於上述相鄰之一對X標尺47x之間之區域(未對向於任一X標尺47x)且+X側之X讀頭49x對向於上述+X側之X標尺47x之第2狀態、-X側之X讀頭49x對向於-X側之X標尺47x且+X側之X讀頭49x對向於+X側之X標尺47x之第3狀態、-X側之X讀頭49x對向於-X側之標尺47x且+X側之X讀頭49x對向於一對X標尺47x之間之區域之(未對向於任一X標尺47x)第4狀態、以及一對讀頭49x之兩方對向於-X側之X標尺47x之第5狀態。是以,始終有至少一方之X讀頭49x對向於X標尺47x。
Specifically, for example, when the mask holder 40 (refer to FIG. 3(A)) moves to the +X side, the mask encoder system 48 moves to each state in the following order: two of a pair of read heads 49x The first state (the state shown in Figure 3(B)) of the X scale 47x on the +X side of the adjacent pair of X scale 47x, the X head 49x on the -X side is facing the above phase The area between the adjacent pair of X scale 47x (not facing any X scale 47x) and the X reader 49x on the +X side is facing the second state and -X side of the X scale 47x on the +X side The X head 49x is facing the X scale 47x on the -X side and the X head 49x on the +X side is facing the 3rd state of the X scale 47x on the +X side, and the X head 49x on the -X side is facing -X-side ruler 47x and +X-side X head 49x facing the area between a pair of X rulers 47x (not facing any X ruler 47x) in the 4th state, and a pair of reading heads 49x The two sides face the fifth state of X scale 47x on the -X side. Therefore, there is always at least one
主控制裝置90(參照圖8),在上述第1、第3、及第5狀態下,係根據一對X讀頭49x之輸出之平均值求出光罩保持具40之X位置資訊。又,主控制裝置90,在上述第2狀態下,僅根據+X側之X讀頭49x之輸出求出光罩保持具40之X位置資訊,在上述第4狀態下,僅根據-X側之X讀頭49x之輸出求出光罩保持具40之X位置資訊。是以,光罩編碼器系統48之測量值不會中斷。此外,亦可在第1、第3、第5狀態均僅使用一對X讀頭49x之一方之輸出求出X位置資訊。不過,在第2、第4狀態
下,於一對讀頭單元44之兩方中一對X讀頭49x之一方及一對Y讀頭49y之一方係從標尺46脫離而無法取得光罩保持具40在θ z方向之位置資訊(旋轉資訊)。因此,較佳為在相對光罩M之載置區域配置於+Y側之三個標尺46與配置於-Y側之三個標尺46,將相鄰之一對標尺46之間隔(未形成有格子之非格子區域)以在X軸方向不重疊之方式彼此錯開配置,即使在配置於+Y側之三個標尺46與配置於-Y側之三個標尺46之一方,X讀頭49x及Y讀頭49y從標尺46脫離,在另一方之X讀頭49x及Y讀頭49y亦不會從標尺46脫離。或者,在X軸方向將一對讀頭單元44錯開較相鄰之一對標尺46之間隔(非格子區域之寬度)寬之距離而配置。藉此,配置於+Y側之一對X讀頭49x及配置於-Y側之一對X讀頭49x之合計四個讀頭中,在X軸方向上測量光束從標尺46之格子區域離之(無法測量之)非測量期間不重疊,至少在掃描曝光中能隨時測量光罩保持具40在θ z方向之位置資訊。此外,亦可在一對讀頭單元44之至少一方中,配置相對一對X讀頭49x及一對Y讀頭49y之至少一方在X軸方向分離配置之至少一個讀頭,在第2、第4狀態下亦在X讀頭49x及Y讀頭49y之至少一方使兩個讀頭與標尺46對向。
The main control device 90 (refer to FIG. 8), in the above-mentioned first, third, and fifth states, obtains the X position information of the
其次,說明基板編碼器系統50之構成。基板編碼器系統50如圖1所示,具備配置於基板載台裝置20之複數個編碼器標尺52(圖1中重疊於紙面深度方向。參照圖4(A))、固定於上架台部18a下面之編碼器基座54、固定於編碼器基座54下面之複數個編碼器標尺56、以及一對編碼器讀頭單元60。
Next, the structure of the
如圖4(A)示意地顯示,在本實施形態之基板載台裝置20
中,於基板P(基板載置區域)之+Y側及-Y側之區域,分別在X軸方向以既定間隔配置有例如五個編碼器標尺52(以下單稱為標尺52)。亦即,基板載台裝置20合計具有例如10個標尺52。複數個標尺52之各個除了在基板P之+Y側與-Y側配置成紙面上下對稱這點以外,實質的為相同之物。標尺52,係與上述光罩編碼器系統48之標尺46(分別參照圖3(A))同樣地,由例如以石英玻璃形成之延伸於X軸方向之俯視矩形板狀(帶狀)之構件所構成。又,複數個標尺52分別具有形成有反射型二維格子或排列方向(週期方向)不同之(例如正交之)兩個反射型一維格子之格子區域(格子部),在Y軸方向之基板載置區域兩側分別以在X軸方向上格子區域彼此分離配置之方式設有五個標尺52。
As shown schematically in Figure 4(A), the
此外,圖1及圖4(A)中,為了容易理解,雖圖示成複數個標尺52固定於基板保持具34上面,但複數個標尺52實際上係如圖2所示,在與基板保持具34分離之狀態下,透過標尺基座51固定於微動載台32(此外,圖2顯示複數個標尺52配置於基板P之+X側及-X側之情形)。不過,依場合不同,亦可實際上於基板保持具34上固定複數個標尺52。以下說明中,係基於複數個標尺52配置於基板保持具34上之前提進行說明。此外,複數個標尺52亦可配置於具有基板保持具34且能在至少Z軸方向與θ x及θ y方向微動之基板平台之上面、或者將基板平台能微動地支承之基板載台之上面等。
In addition, in FIGS. 1 and 4(A), for ease of understanding, although a plurality of
如圖4(B)所示,在標尺52上面之寬度方向一側(在圖4(B)中為-Y側)之區域形成有X標尺53x。又,在標尺52上面之寬度方向另一側(在圖4(B)中為+Y側)之區域形成有Y標尺53y。X標尺53x
及Y標尺53y之構成,由於與形成於上述光罩編碼器系統48之標尺46(分別參照圖3(A))之X標尺47x及Y標尺47y(分別參照圖3(B))相同,因此省略說明。
As shown in FIG. 4(B), an
編碼器基座54,由圖5及圖6可知,具備:由固定在上架台部18a下面之延伸於Y軸方向之板狀構件構成之第1部分54a、以及由固定在第1部分54a下面之延伸於Y軸方向之XZ剖面U字狀之構件構成之第2部分54b,整體形成為延伸於Y軸方向之筒狀。如圖4(A)所示,編碼器基座54之X位置,雖與投影光學系16之中心之X位置大略一致,但編碼器基座54與投影光學系16配置成不接觸。此外,編碼器基座54,亦可與投影光學系16在+Y側與-Y側分離配置。於編碼器基座54之下面,如圖6所示固定有一對Y線性導件63a。一對Y線性導件63a,分別由延伸於Y軸方向之構件構成,於X軸方向以既定間隔彼此平行配置。
The
於編碼器基座54下面固定有複數個編碼器標尺56(以下單稱為標尺56)。本實施形態中,標尺56如圖1所示,於投影光學系16之+Y側區域在Y軸方向分離配置有例如兩個,於投影光學系16之-Y側區域在Y軸方向分離配置有例如兩個。亦即,於編碼器基座54合計固定有例如四個標尺56。複數個標尺56之各個實質相同。標尺56,由延伸於Y軸方向之俯視矩形之板狀(帶狀)構件構成,與配置於基板載台裝置20之標尺52同樣地,藉由例如石英玻璃形成。複數個標尺56分別具有形成有反射型二維格子或排列方向(週期方向)不同之(例如正交之)兩個反射型一維格子的格子區域(格子部),本實施形態中,與標尺46、52同樣地,具有形成有以X軸方向作為排列方向(週期方向)之一維格子之X標尺、以及形
成有以Y軸方向作為排列方向(週期方向)之一維格子之Y標尺,在Y軸方向之投影光學系16之兩側,分別以在Y軸方向上格子區域彼此分離之方式設有兩個標尺56。此外,為了容易理解,圖4(A)中,複數個標尺56係以實線圖示,並圖示成配置於編碼器基座54上面,但複數個標尺56,實際上如圖1所示配置於編碼器基座54下面側。此外,本實施形態中雖於投影光學系16之+Y側與-Y側分別設置兩個標尺56,但亦可非為兩個而為一個或者三個以上之標尺56。又,本實施形態中雖係以格子面朝向下方之方式(格子區域與XY平面成平行之方式)設置標尺56,但亦可以例如格子區域與YZ平面成平行之方式設置標尺56。
A plurality of encoder scales 56 (hereinafter simply referred to as scales 56) are fixed under the
如圖4(C)所示,在標尺56下面之寬度方向一側(在圖4(C)中為+X側)之區域形成有X標尺57x。又,在標尺56下面之寬度方向另一側(在圖4(C)中為-X側)之區域形成有Y標尺57y。X標尺57x及Y標尺57y之構成,由於與形成於上述光罩編碼器系統48之標尺46(分別參照圖3(A))之X標尺47x及Y標尺47y(分別參照圖3(B))相同,因此省略說明。
As shown in FIG. 4(C), an
返回圖1,一對編碼器讀頭單元60(以下單稱為讀頭單元60),係於編碼器基座54下方在Y軸方向分離配置。一對讀頭單元60之各個,由於除了在圖1中配置成紙面左右對稱這點以外,其餘實質相同,因此以下僅針對其中一方(-Y側)說明。讀頭單元60如圖5所示,具備Y滑動平台62、一對X讀頭64x、一對Y讀頭64y(圖5中因隱藏於一對X讀頭64x之紙面深側故未圖示。參照圖4(C))、一對X讀頭66x(圖5中一方之X讀頭66x未圖示。參照圖4(B))、一對Y讀頭66y(圖5中一方
之Y讀頭66y未圖示。參照圖4(B))、以及用以將Y滑動平台62驅動於Y軸方向之皮帶驅動裝置68。此外,本實施形態之一對讀頭單元60,除了已旋轉90度這點以外,與光罩編碼器系統48之一對讀頭單元44為相同構成。
Returning to FIG. 1, a pair of encoder head units 60 (hereinafter simply referred to as head units 60) are arranged below the
Y滑動平台62由俯視矩形之板狀構件構成,於編碼器基座54之下方,相對該編碼器基座54隔著既定空隙配置。又,Y滑動平台62之Z位置,設定為不論基板載台裝置20所具有之基板保持具34(分別參照圖1)之Z傾斜位置為何,均較該基板保持具34更靠+Z側。
The
於Y滑動平台62之上面,如圖6所示固定有複數個Y滑動構件63b(相對於1支Y線性導件63a固定有例如兩個(參照圖5)),該Y滑動構件63b係相對於上述Y線性導件63a透過未圖示之滾動體(例如循環式之複數個滾珠)在Y軸方向滑動自如地卡合。Y線性導件63a與對應該Y線性導件63a之Y滑動構件63b,構成例如如美國專利第6,761,482號說明書所揭示之機械式Y線性導件裝置63,Y滑動平台62,透過一對Y線性導件裝置63相對編碼器基座54被直進導引於Y軸方向。
On the upper surface of the
皮帶驅動裝置68,如圖5所示具備旋轉驅動裝置68a、滑輪68b、以及皮帶68c。此外,針對-Y側之Y滑動平台62驅動用與+Y側之Y滑動平台62(圖5中未圖示。參照圖4(A))驅動用,亦可獨立配置皮帶驅動裝置68,亦可以一個皮帶驅動裝置68將一對Y滑動平台62一體地驅動。
The
旋轉驅動裝置68a,固定於編碼器基座54,具備未圖示之旋轉馬達。該旋轉馬達之旋轉數、旋轉方向,被主控制裝置90(參照圖8)控制。滑輪68b,藉由旋轉驅動裝置68a而繞與X軸平行之軸線被旋轉驅動。
又,雖未圖示,但皮帶驅動裝置68,具有相對於上述滑輪68b在Y軸方向分離配置、以繞與X軸平行之軸線旋轉自如之狀態安裝於編碼器基座54之另一滑輪。皮帶68c,一端及另一端連接於Y滑動平台62,且長度方向之中間部之2處以上述滑輪68b及上述另一滑輪(未圖示)被賦予既定張力之狀態捲掛。皮帶68c之一部分插通於編碼器基座54內,例如抑制來自皮帶68c之粉塵附著於標尺52,56等。Y滑動平台62,藉由滑輪68b被旋轉驅動,被皮帶68c牽引而往Y軸方向以既定行程往復移動。
The
主控制裝置90(參照圖8),係將一方(+Y側)之讀頭單元60在配置於較投影光學系16靠+Y側之例如兩個標尺56之下方、且將另一方(-Y側)之讀頭單元60在配置於較投影光學系16靠-Y側之例如兩個標尺56之下方,往Y軸方向以既定行程適當地同步驅動。此處,雖亦可與基板載台裝置20往Y軸方向之移動同步地將一對讀頭單元60分別移動,但本實施形態中,係以一對讀頭單元60分別以在Y軸方向一對X讀頭66x及一對Y讀頭66y之測量光束均不會從標尺52之格子區域脫離(維持至少一個測量光束對格子區域之照射)之方式移動一對讀頭單元60。此外,作為驅動Y滑動平台62之致動器,本實施形態中雖使用包含帶齒滑輪68b與帶齒皮帶68c之皮帶驅動裝置68,但並不限於此,亦可使用包含無齒滑輪與皮帶之摩擦輪裝置。又,牽引Y滑動平台62之可撓性構件不限於皮帶,亦可係例如繩、金屬線、鏈條等。又,用以驅動Y滑動平台62之致動器種類不限於皮帶驅動裝置68,例如亦可係線性馬達、進給螺桿裝置等之其他驅動裝置。
The main control device 90 (refer to FIG. 8) is to arrange the
X讀頭64x、Y讀頭64y(圖5中未圖示。參照圖6)、X讀
頭66x、以及Y讀頭66y之各個,係與上述光罩編碼器系統48所具有之X讀頭49x、Y讀頭49y相同之所謂繞射干渉方式之編碼器讀頭,固定於Y滑動平台62。此處,讀頭單元60中,一對Y讀頭64y、一對X讀頭64x、一對Y讀頭66y、以及一對X讀頭66x,係以各自相互間之距離不會因例如振動等而變化之方式相對Y滑動平台62固定。又,Y滑動平台62本身亦同樣地,以一對Y讀頭64y、一對X讀頭64x、一對Y讀頭66y、以及一對X讀頭66x各自相互間之距離不會因例如溫度變化而變化之方式,以熱膨張率較標尺52,56低之(或者與標尺52,56同等之)材料形成。
如圖7所示,一對X讀頭64x之各個,係對X標尺57x上之在Y軸方向彼此分離之2處(2點)照射測量光束,一對Y讀頭64y之各個,係對Y標尺57y上之在Y軸方向彼此分離之2處(2點)照射測量光束。基板編碼器系統50,藉由上述X讀頭64x及Y讀頭64y接收來自對應之標尺之光束,將Y滑動平台62(圖7中未圖示。參照圖5及圖6)之位移量資訊供應至主控制裝置90(參照圖8)。亦即,基板編碼器系統50,例如藉由四個X讀頭64x及與該X讀頭64x對向之X標尺57x(依Y滑動平台62之Y位置而不同),構成用以求出一對Y滑動平台62(亦即一對讀頭單元60(參照圖1))各自在Y軸方向之位置資訊之例如四個X線性編碼器96x(圖7中未圖示。參照圖8),藉由例如四個Y讀頭64y及與該Y讀頭64y對向之Y標尺57y(依Y滑動平台62之Y位置而不同),構成用以求出一對Y滑動平台62各自在Y軸方向之位置資訊之例如四個Y線性編碼器96y(圖7中未圖示。參照圖8)。
As shown in Figure 7, each of a pair of X heads 64x irradiates measurement beams at two locations (2 points) on the
主控制裝置90如圖8所示,係根據例如四個X線性編碼器
96x、以及例如四個Y線性編碼器96y之輸出,以例如10nm以下之分解能力求出一對讀頭單元60(參照圖1)各自在X軸方向及Y軸方向之位置資訊。又,主控制裝置90,根據與一方之讀頭單元60對應之例如兩個X線性編碼器96x(或者例如兩個Y線性編碼器96y)之輸出求出該一方之讀頭單元60之θ z位置資訊(旋轉量資訊),根據與另一方之讀頭單元60對應之例如兩個X線性編碼器96x(或者例如兩個Y線性編碼器96y)之輸出求出該另一方之讀頭單元60之θ z位置資訊(旋轉量資訊)。主控制裝置90,根據一對讀頭單元60各自在XY平面內之位置資訊,使用皮帶驅動裝置68控制讀頭單元60在Y軸方向之位置。
The
此處,如圖4(A)所示,於編碼器基座54,如上所述在投影光學系16之+Y側及-Y側之區域分別在Y軸方向以既定間隔配置有例如兩個標尺56。又,在讀頭單元60(一對X讀頭64x、一對Y讀頭64y(分別參照圖4(C))全部)所對向之在上述Y軸方向以既定間隔配置之例如兩個標尺56中之+Y側之標尺56的位置、與讀頭單元60對向於-Y側之標尺56之位置之間,將Y滑動平台62驅動於Y軸方向。
Here, as shown in FIG. 4(A), on the
又,與上述光罩編碼器系統48同樣地,基板編碼器系統50中,一個讀頭單元60所具有之一對X讀頭64x及一對Y讀頭64y各自之間隔,亦如圖4(C)所示設定成較相鄰之標尺56間之間隔寬。藉此,基板編碼器系統50中,一對X讀頭64x中隨時有至少一方對向於X標尺57x,且一對Y讀頭64y中之至少一方隨時對向於Y標尺57y。是以,基板編碼器系統50,可不中斷測量值而求出Y滑動平台62(讀頭單元60)之位置資訊。
Also, similar to the above-mentioned
又,如圖7所示,一對X讀頭66x之各個,係對X標尺53x
上之在X軸方向彼此分離之2處(2點)照射測量光束,一對Y讀頭66y之各個,係對Y標尺53y上之在X軸方向彼此分離之2處(2點)照射測量光束。基板編碼器系統50,藉由上述X讀頭66x及Y讀頭66y接收來自對應之標尺之光束,將基板保持具34(圖7中未圖示。參照圖2)之位移量資訊供應至主控制裝置90(參照圖8)。亦即,基板編碼器系統50,例如藉由四個X讀頭66x及與該X讀頭66x對向之X標尺53x(依基板保持具34之X位置而不同),構成用以求出基板P在X軸方向之位置資訊之例如四個X線性編碼器94x(圖7中未圖示。參照圖8),藉由例如四個Y讀頭66y及與該Y讀頭66y對向之Y標尺53y(依基板保持具34之X位置而不同),構成用以求出基板P在Y軸方向之位置資訊之例如四個Y線性編碼器94y(圖7中未圖示。參照圖8)。
Also, as shown in Fig. 7, each of a pair of X read
主控制裝置90如圖8所示,係根據例如四個X線性編碼器94x及例如四個Y線性編碼器94y之輸出、以及上述四個X線性編碼器96x及例如四個Y線性編碼器96y之輸出(亦即,一對讀頭單元60各自在XY平面內之位置資訊),以例如10nm以下之分解能力求出基板保持具34(參照圖2)在X軸方向及Y軸方向之位置資訊。又,主控制裝置90,根據例如四個X線性編碼器94x(或者例如四個Y線性編碼器94y)中之至少兩個之輸出求出基板保持具34之θ z位置資訊(旋轉量資訊)。主控制裝置90,根據從上述基板編碼器系統50之測量值求出之基板保持具34在XY平面內之位置資訊,使用基板驅動系93控制基板保持具34在XY平面內之位置。
The
又,如圖4(A)所示,於基板保持具34,如上所述在基板P之+Y側及-Y側之區域分別在X軸方向以既定間隔配置有例如5個標尺
52。又,在讀頭單元60(一對X讀頭66x、一對Y讀頭66y(分別參照圖4(B))全部)所對向之於上述X軸方向以既定間隔配置之例如五個標尺52中最靠+X側之標尺52的位置與讀頭單元60對向於最靠-X側之標尺52的位置之間,將基板保持具34驅動於X軸方向。
In addition, as shown in FIG. 4(A), in the
又,與上述光罩編碼器系統48同樣地,一個讀頭單元60所具有之一對X讀頭66x及一對Y讀頭66y各自之間隔,係如圖4(B)所示,設定為較相鄰之標尺52間之間隔寬。藉此,基板編碼器系統50中,一對X讀頭66x中隨時有至少一方對向於X標尺53x,且一對Y讀頭66y中之至少一方隨時對向於Y標尺53y。是以,基板編碼器系統50,可不中斷測量值而求出基板保持具34(參照圖4(A))之位置資訊。
Also, similar to the above-mentioned
此外,基板編碼器系統50之一對讀頭單元60之各個所具有之一對Y讀頭64y、一對X讀頭64x、一對Y讀頭66y、以及一對X讀頭66x、以及被來自此等讀頭之測量光束照射之標尺56,52,能同樣地適用前述之關於構成光罩編碼器系統48之讀頭、標尺所說明之所有說明(包含附註說明)之構成。
In addition, each of the pair of reading
返回圖6,防塵罩55,由形成為XZ剖面U字狀之延伸於Y軸方向之構件構成,上述編碼器基座54之第2部分54b及Y滑動平台62隔著既定空隙插入一對對向面間。於防塵罩55下面形成有使X讀頭66x及Y讀頭66y通過之開口部。藉此,抑制從Y線性導件裝置63、皮帶68c等產生之粉塵附著於標尺52。又,於編碼器基座54之下面固定有一對防塵板55a(圖5中未圖示)。標尺56配置於一對防塵板55a間,以抑制從Y線性導件裝置63等產生之粉塵附著於標尺56。
Returning to Fig. 6, the
圖8顯示以液晶曝光裝置10(參照圖1)之控制系為中心構成、統籌控制構成各部之主控制裝置90之輸出入關係的方塊圖。主控制裝置90包含工作站(或微電腦)等,統籌控制液晶曝光裝置10之構成各部。
FIG. 8 shows a block diagram of the input/output relationship of the
以如上述方式構成之液晶曝光裝置10(參照圖1),係在主控制裝置90(參照圖8)之管理下,藉由未圖示之光罩裝載器進行光罩M對光罩載台裝置14上之裝載,且藉由未圖示之基板裝載器進行基板P對基板載台裝置20(基板保持具34)上之裝載。其後,藉由主控制裝置90,使用未圖示之對準檢測系執行對準測量(基板P之複數個對準標記之檢測),在該對準測量之結束後,對設定於基板P上之複數個照射區域進行逐次步進掃描方式之曝光動作。此外,在對準測量動作中亦藉由基板編碼器系統50測量基板保持具34之位置資訊。
The liquid crystal exposure apparatus 10 (refer to FIG. 1) configured as described above is managed by the main control device 90 (refer to FIG. 8), and the mask M is compared to the mask stage by a mask loader (not shown). The loading on the
其次,使用圖9(A)~圖16(B)說明曝光動作時之光罩載台裝置14及基板載台裝置20之動作一例。此外,以下說明中,雖係說明於1片基板P上設定有四個照射區域之情形(所謂取4面之情形),但設定於1片基板P上之照射區域之數目及配置能適當變更。
Next, an example of the operation of the
圖9(A)顯示對準動作結束後之光罩載台裝置14,圖9(B)顯示對準動作結束後之基板載台裝置20(不過,基板保持具34以外之構件未圖示。以下同)。曝光處理,作為一例,係如圖9(B)所示,從設定於基板P之-Y側且+X側之第1照射區域S1開始進行。光罩載台裝置14,如圖9(A)所示,係以光罩M之+X側端部位於較被來自照明系12之照明光IL(分別參照圖1)照射之照明區域(不過,圖9(A)所示之狀態,係還未對光罩M照射照明光IL)略靠-X側之方式,根據光罩編碼器系統48
(參照圖8)之輸出進行光罩M之定位。具體而言,例如,相對照明區域之光罩M之圖案區域之+X側端部,係往-X側相隔為了以既定速度掃描曝光所必須之助跑距離(亦即,為了達到既定速度所必須之加速距離)而配置,以在該位置能藉由光罩編碼器系統48測量光罩M位置之方式設有標尺46。又,基板載台裝置20,如圖9(B)所示,係以第1照射區域S1之+X側端部位於較被來自投影光學系16之照明光IL(參照圖1)照射之曝光區域(不過,圖9(B)所示之狀態,係還未對基板P照射照明光IL)略靠-X側之方式,根據基板編碼器系統50(參照圖8)之輸出進行基板P之定位。具體而言,例如,相對曝光區域之基板P之第1照射區域S1之+X側端部,係往-X側相隔為了以既定速度掃描曝光所必須之助跑距離(亦即,為了達到既定速度所必須之加速距離),以在該位置能藉由基板編碼器系統50測量基板P位置之方式設有標尺52。此外,即使在結束照射區域之掃描曝光並分別使光罩M及基板P減速之側,亦同樣地,以使光罩M及基板P進一步移動為了從掃描曝光時之速度減速至既定速度所必須之減速距離為止能以光罩編碼器系統48、基板編碼器系統50分別測量光罩M、基板P之位置之方式設有標尺46、52。或者,亦可使之能在加速中及減速中之至少一方之動作中,藉由與光罩編碼器系統48、基板編碼器系統50不同之另一測量系分別測量光罩M及基板P之位置。
9(A) shows the
其次,如圖10(A)所示,光罩保持具40被往+X方向驅動(加速、等速驅動、以及減速),且與該與光罩保持具40同步地,如圖10(B)所示,基板保持具34被往+X方向驅動(加速、等速驅動、以及減速)。在光罩保持具40被驅動時,主控制裝置90(參照圖8),係根據光
罩編碼器系統48(參照圖8)之輸出進行光罩M之位置控制,且根據基板編碼器系統50(參照圖8)之輸出進行基板P之位置控制。在基板保持具34被往X軸方向驅動時,一對讀頭單元60成為靜止狀態。在光罩保持具40及基板保持具34被往X軸方向等速驅動之期間,對基板P照射通過光罩M及投影光學系16之照明光IL(分別參照圖1),藉此光罩M所具有之光罩圖案被轉印至照射區域S1。
Next, as shown in FIG. 10(A), the
在對基板P上之第1照射區域S1之光罩圖案之轉印結束後,基板載台裝置20係如圖11(B)所示,為了進行對設定在第1照射區域S1之+Y側之第2照射區域S2之曝光動作,係根據基板編碼器系統50(參照圖8)之輸出,基板保持具34被往-Y方向驅動(Y步進)既定距離(基板P之寬度方向尺寸之大致一半之距離)。在上述基板保持具34之Y步進動作時中,光罩保持具40係如圖11(A)所示,以光罩M之-X側端部位於較照明區域(不過在圖11(A)所示之狀態,不照明光罩M)略靠+X側之狀態靜止。
After the transfer of the first shot area on the substrate P S of the end of the reticle pattern, based
此處,如圖11(B)所示,在上述基板保持具34之Y步進動作時,基板載台裝置20中,一對讀頭單元60係與基板保持具34同步地被往Y軸方向驅動。亦即,主控制裝置90(參照圖8),係一邊根據基板編碼器系統50(參照圖8)中Y線性編碼器94y之輸出,將基板保持具34透過基板驅動系93(參照圖8)往Y軸方向驅動至目標位置,一邊根據Y線性編碼器96y(參照圖8)之輸出,將一對讀頭單元60透過對應之皮帶驅動裝置68(參照圖8)往Y軸方向驅動。此時,主控制裝置90,係將一對讀頭單元60與基板保持具34同步地(以一對讀頭單元60追隨基板保持具34
之方式)驅動。是以,無論基板保持具34之Y位置(亦包含基板保持具34之移動中)為何,從X讀頭66x、Y讀頭66y(分別參照圖7)照射之測量光束均不會從X標尺53x、Y標尺53y(分別參照圖7)脫離。換言之,只要以將基板保持具34在往Y軸方向移動中(Y步進動作中)從X讀頭66x、Y讀頭66y照射之測量光束均不會從X標尺53x、Y標尺53y脫離之程度、亦即透過來自X讀頭66x、Y讀頭66y之測量光束之測量不中斷之(能持續測量之)程度,使一對讀頭單元60與基板保持具34往Y軸方向移動即可。亦即,一對讀頭單元60與基板保持具34往Y軸方向之移動可非為同步、追隨移動。
Here, as shown in FIG. 11(B), during the Y stepping operation of the
在基板保持具34之Y步進動作結束後,如圖12(A)所示,根據光罩編碼器系統48(參照圖8)之輸出將光罩保持具40往-X方向驅動,且與該光罩保持具40同步地,如圖12(B)所示,根據基板編碼器系統50(參照圖8)之輸出將基板保持具34往-X方向驅動。藉此,於第2照射區域S2轉印光罩圖案。此時,一對讀頭單元60亦為靜止狀態。
After the Y stepping action of the
在對第2照射區域S2之曝光動作結束後,光罩載台裝置14,係如圖13(A)所示,將光罩保持具40往+X方向驅動,而以光罩M之-X側端部位於較照明區域略靠+X側之方式,根據光罩編碼器系統48(參照圖8)之輸出進行光罩M之定位。又,基板載台裝置20,係如圖13(B)所示,為了對設定於第2照射區域S2之-X側之第3照射區域S3進行曝光動作,而將基板保持具34往+X方向驅動,以第3照射區域S3之-X側端部位於較曝光區域略靠+X側之方式,根據基板編碼器系統50(參照圖8)之輸出進行基板P之定位。在圖13(A)及圖13(A)所示之光罩保持具
40及基板保持具34之移動動作時,不從照明系12(參照圖1)將照明光IL對光罩M(圖13(A)參照)及基板P(圖13(B)參照)照射。亦即,圖13(A)及圖13(B)所示之光罩保持具40及基板保持具34之移動動作,係單純之光罩M及基板P之定位動作(X步進動作)。
After the irradiation of the second region S 2 of the end of the exposure operation, the
在光罩M及基板P之X步進動作結束後,光罩載台裝置14,係如圖14(A)所示,根據光罩編碼器系統48(參照圖8)之輸出將光罩保持具40往-X方向驅動,且與該光罩保持具40同步地,如圖14(B)所示根據基板編碼器系統50(參照圖8)之輸出將基板保持具34往-X方向驅動。藉此於第3照射區域S3轉印光罩圖案。此時,一對讀頭單元60亦為靜止狀態。
After the X stepping action of the mask M and the substrate P is completed, the
在對第3照射區域S3之曝光動作結束後,基板載台裝置20,係如圖15(B)所示,為了對設定於第3照射區域S3之-Y側之第4照射區域S4進行曝光動作,而將基板保持具34往+Y方向驅動(Y步進驅動)既定距離。此時,與圖11(B)所示之基板保持具34之Y步進動作時同樣地,光罩保持具40為靜止狀態(參照圖15(A))。又,一對讀頭單元60,係與基板保持具34同步地(以追隨基板保持具34之方式)往+Y方向驅動。
3 after the first exposure shot areas S 3 of the end of operation, the
在基板保持具34之Y步進動作結束後,如圖16(A)所示,根據光罩編碼器系統48(參照圖8)之輸出將光罩保持具40往+X方向驅動,且與該光罩保持具40同步地,如圖16(B)所示,根據基板編碼器系統50(參照圖8)之輸出將基板保持具34往+X方向驅動。藉此,於第4照射區域S4轉印光罩圖案。此時,一對讀頭單元60亦為靜止狀態。
After the Y stepping action of the
如以上所說明,根據本實施形態之液晶曝光裝置10,用以
求出光罩M在XY平面內之位置資訊之光罩編碼器系統48、以及用以求出基板P在XY平面內之位置資訊之基板編碼器系統50(分別參照圖1),由於對對應之標尺照射之測量光束之光路長較短,因此相較於例如習知干渉儀系統能更減低空氣波動之影響。是以,光罩M及基板P之定位精度提升。又,由於空氣波動之影響小,因此能省略使用習知干渉儀系統時所必須之部分空調設備,因此能降低成本。
As described above, the liquid
再者,在使用干渉儀系統之情形,雖必須將大且重之棒反射鏡設於光罩載台裝置14及基板載台裝置20,但本實施形態之光罩編碼器系統48及基板編碼器系統50,由於不需要上述棒反射鏡,因此包含光罩保持具40之系(例如光罩載台裝置)、以及包含基板保持具34之系(例如基板載台裝置)可分別小型輕量化,且重量平衡亦變佳,藉此光罩M、基板P之位置控制性提升。又,由於與使用干渉儀系統之情形相較,調整部位較少即可,因此光罩載台裝置14及基板載台裝置20之成本降低,進而維護性亦提升。又,組裝時之調整亦容易(或者不需要)。
Furthermore, in the case of using the interference instrument system, although a large and heavy rod mirror must be installed on the
又,本實施形態之基板編碼器系統50,由於係在基板P往Y軸方向之移動(例如步進動作)中,藉由將一對讀頭單元60往Y軸方向驅動以求出基板P之Y位置資訊的構成,因此不需將延伸於Y軸方向之標尺配置於基板載台裝置20側、或將延伸於X軸方向之標尺之寬度於Y軸方向擴大(或不需於裝置本體18側在Y軸方向排列複數個讀頭)。是以,能簡化基板位置測量系之構成,而能降低成本。
In addition, the
又,本實施形態之光罩編碼器系統48,由於係一邊將相鄰之一對編碼器讀頭(X讀頭49x、Y讀頭49y)之輸出依據光罩保持具40之
X位置適當地切換、一邊求出該光罩保持具40在XY平面內之位置資訊的構成,因此即使將複數個標尺46於X軸方向以既定間隔(彼此分離地)配置,亦可在不中斷之情形下求出光罩保持具40之位置資訊。是以,不需準備與光罩保持具40之移動行程同等長度(本實施形態之標尺46之約3倍長度)之標尺,即能降低成本,特別是對於如本實施形態之使用大型光罩M之液晶曝光裝置10非常合適。本實施形態之基板編碼器系統50亦同樣地,由於複數個標尺52在X軸方向以既定間隔配置,複數個標尺56在Y軸方向以既定間隔配置,因此不需準備與基板P之移動行程同等長度之標尺,對於使用大型基板P之液晶曝光裝置10非常合適。
In addition, the
此外,上述第1實施形態中,雖係針對一對讀頭單元60分別具有用以測量基板保持具34位置之四個讀頭(各一對X讀頭66x及Y讀頭66y)、合計設有八個基板保持具位置測量用讀頭之情形進行了說明,但基板保持具位置測量用讀頭之數目亦可為少於八個。以下說明此種實施形態。
In addition, in the above-mentioned first embodiment, although the pair of
《第2實施形態》 "Second Embodiment"
其次,根據圖17~圖20(C)說明第2實施形態。本第2實施形態之液晶曝光裝置之構成,由於除了基板編碼器系統50之一部分構成以外,其餘均與前述第1實施形態相同,因此以下僅針對相異點進行說明,針對與第1實施形態具有相同構成及功能之要素,賦予與第1實施形態相同之符號省略其說明。
Next, the second embodiment will be described based on FIGS. 17 to 20(C). The structure of the liquid crystal exposure apparatus of the second embodiment is the same as that of the first embodiment except for a part of the
圖17,係以俯視圖顯示本第2實施形態之基板保持具34及基板編碼器系統50之一對讀頭單元60與投影光學系16。圖17中,為了使
說明易於理解,省略了編碼器基座54等之圖示。又,圖17中,以虛線圖示讀頭單元60(Y滑動平台62),且亦省略設於Y滑動平台62上面之X讀頭64x、Y讀頭64y之圖示。
FIG. 17 is a plan view showing a pair of the
本第2實施形態之液晶曝光裝置,如圖17所示,係於隔著基板保持具34之基板載置區域之+Y側及-Y側之區域,分別以在X軸方向上格子區域彼此分離配置之方式在X軸方向以既定間隔配置有例如五個編碼器標尺152(以下單稱為標尺152)。在配置於基板載置區域之+Y側之五個標尺152與配置於-Y側區域之五個標尺152中,相鄰之標尺152(格子區域)間之間隔雖為相同,但其配置位置相對於+Y側之五個標尺152,-Y側之五個標尺152係整體往+X側偏離既定距離D(較相鄰之標尺152(格子區域)之間隔略大之距離)而配置。如此配置之原因,係為了避免產生測量基板保持具34之位置資訊之後述兩個X讀頭66x及兩個Y讀頭66y之合計四個讀頭中之兩個以上之讀頭不對向於任一標尺之狀態(亦即,四個讀頭中測量光束從標尺脫離之非測量期間不重疊)。
The liquid crystal exposure apparatus of the second embodiment, as shown in FIG. 17, is located on the +Y side and -Y side of the substrate mounting area with the
各標尺152,由以例如石英玻璃形成之延伸於X軸方向之俯視矩形之板狀(帶狀)構件所構成。於各標尺152之上面,形成有以X軸方向及Y軸方向作為週期方向之既定節距(例如1μm)之反射型二維繞射格子(二維光柵)RG。以下,將前述格子區域亦單稱為二維光柵RG。此外,圖17,為了圖示方便,二維光柵RG之格子線間之間隔(節距)圖示成較實際寬許多。以下說明之其他圖亦相同。以下,將配置於基板保持具34之+Y側區域之五個標尺152稱為第1格子群,將配置於基板保持具34之-Y側區域之五個標尺152稱為第2格子群。
Each
於位於+Y側之一方之讀頭單元60之Y滑動平台62之下面(-Z側之面),以分別對向於標尺152之狀態,在X軸方向分離既定間隔(較相鄰之標尺152之間隔大之距離)固定有X讀頭66x與Y讀頭66y。同樣地,於位於-Y側之另一方之讀頭單元60之Y滑動平台62之下面(-Z側之面),以分別對向於標尺152之狀態,在X軸方向分離既定間隔固定有Y讀頭66y與X讀頭66x。亦即,與第1格子群對向之X讀頭66x及Y讀頭66y、以及與第2格子群對向之X讀頭66x及Y讀頭66y分別以較相鄰之標尺152之格子區域之間隔寬之間隔將測量光束照射於標尺152。以下,為了說明方便,將一方之讀頭單元60所具有之X讀頭66x、Y讀頭66y亦分別稱為讀頭66a、讀頭66b,將另一方之讀頭單元60所具有之Y讀頭66y、X讀頭66x亦分別稱為讀頭66c、讀頭66d。
The underside of the
此情形下,讀頭66a與讀頭66c配置於相同X位置(與Y軸方向平行之相同直線上),讀頭66b與讀頭66d,配置於和讀頭66a與讀頭66c之X位置不同之相同X位置(與Y軸方向平行之相同直線上)。藉由讀頭66a、66d與分別對向之二維光柵RG構成一對X線性編碼器,藉由讀頭66b、66c與分別對向之二維光柵RG構成一對Y線性編碼器。
In this case, the reading
本第2實施形態之液晶曝光裝置,包含讀頭單元60之剩餘部分在內之其他部分之構成,除了使用主控制裝置90之基板編碼器系統之基板保持具34之驅動控制(位置控制)以外,其餘均與前述第1實施形態之液晶曝光裝置10相同。
The liquid crystal exposure apparatus of the second embodiment has the structure of other parts including the rest of the
本第2實施形態之液晶曝光裝置,能在圖18(A)所示之一對讀頭單元60對向於基板保持具34之+X端部之第1位置與圖18(B)所
示之一對讀頭單元60對向於基板保持具34之-X端部之第2位置之間,在基板保持具34於X軸方向移動之範圍內,進行一對讀頭單元60之讀頭66a~66d、亦即一對X線性編碼器及一對Y線性編碼器對基板保持具34之位置測量。圖18(A)係顯示僅有讀頭66b不對向於任一標尺152之狀態,圖18(B)係顯示僅有讀頭66c不對向於任一標尺152之狀態。
The liquid crystal exposure apparatus of this second embodiment can be positioned at the first position of the +X end portion of the
在圖18(A)所示之第1位置與圖18(B)所示之第2位置之間將基板保持具34移動於X軸方向之過程中,一對讀頭單元60與標尺152之位置關係,係在圖19(A)~圖19(D)所分別顯示之第1狀態~第4狀態與四個讀頭66a~66d之全部對向於任一標尺152之二維光柵RG之(亦即,以四個讀頭66a~66d全部將測量光束照射於二維光柵RG)第5狀態的五個狀態之間遷移。以下,取代讀頭對向於標尺152之二維光柵RG、或測量光束照射於標尺152之二維光柵RG之敘述方式,單以「讀頭對向於標尺」之敘述來描述。
In the process of moving the
此處,為了說明方便,舉出六個標尺152,對各標尺分別賦予用以識別之記號a~f,標記為標尺152a~152f(參照圖19(A))。
Here, for the convenience of description, six
圖19(A)之第1狀態,係顯示讀頭66a對向於標尺152b且讀頭66c、66d對向於標尺152e,僅讀頭66b不對向於任一標尺之狀態,圖19(B)之第2狀態,係顯示基板保持具34從圖19(A)之狀態往+X方向移動既定距離而成為讀頭66a、66b對向於標尺152b且讀頭66d對向於標尺152e,僅有讀頭66c不對向於任一標尺之狀態。在從圖19(A)之狀態遷移至圖19(B)之狀態之過程中,會經由讀頭66a、66b對向於標尺152b且讀頭66c、66d對向於標尺152e之第5狀態。
The first state of Fig. 19(A) shows that the reading
圖19(C)之第3狀態,係顯示基板保持具34從圖19(B)之狀態往+X方向移動既定距離而成為僅有讀頭66a不對向於任一標尺之狀態。在從圖19(B)之狀態遷移至圖19(C)之狀態之過程中,會經由讀頭66a、66b對向於標尺152b且讀頭66c對向於標尺152d且讀頭66d對向於標尺152e之第5狀態。
The third state of FIG. 19(C) shows that the
圖19(D)之第4狀態,係顯示基板保持具34從圖19(C)之狀態往+X方向移動既定距離而成為僅有讀頭66d不對向於任一標尺之狀態。在從圖19(C)之狀態遷移至圖19(D)之狀態之過程中,會經由讀頭66a對向於標尺152a且讀頭66b對向於標尺152b且讀頭66c對向於標尺152d且讀頭66d對向於標尺152e之第5狀態。
The fourth state of FIG. 19(D) shows that the
在從圖19(D)之狀態,基板保持具34再往+X方向移動既定距離,經由讀頭66a對向於標尺152a且讀頭66b對向於標尺152b且讀頭66c、66d對向於標尺152d之第5狀態後,成為讀頭66a對向於標尺152a且讀頭66c、66d對向於標尺152d,僅有讀頭66b不對向於任一標尺之第1狀態。
In the state shown in FIG. 19(D), the
以上,雖說明了分別配置於基板保持具34之±Y側之標尺152中之各三個標尺152與一對讀頭單元60之間之狀態(位置關係)之遷移,但在液晶曝光裝置10之標尺152與一對讀頭單元60之間,若著眼於分別配置於基板保持具34之±Y側之五個標尺中之相鄰之各三個標尺152,則與一對讀頭單元60之位置關係亦係以與上述相同之順序遷移。
In the above, although the transition of the state (positional relationship) between each of the three
如上述,本第2實施形態中,即使基板保持具34移動於X軸方向,兩個X讀頭66x亦即讀頭66a、66d與兩個Y讀頭66y亦即讀頭66b、
66c之合計四個讀頭中之至少三個會隨時對向於任一標尺152(二維光柵RG)。再者,即使基板保持具34移動於Y軸方向,由於四個讀頭均以在Y軸方向上測量光束不從標尺152(二維光柵RG)脫離之方式將一對Y滑動平台62驅動於Y軸方向,因此四個讀頭之至少三個讀頭隨時對向於任一標尺152。是以,主控制裝置90,能隨時使用讀頭66a~66d中之三個,管理基板保持具34在X軸方向、Y軸方向以及θ z方向之位置資訊。以下進一步說明此點。
As described above, in the second embodiment, even if the
將X讀頭66x、Y讀頭66y之測量值分別設為CX、CY,測量值CX、CY,分別能以下式(1a)、(1b)表示。
Let the measured values of the
CX=(pi-X)cos θ z+(qi-Y)sin θ z……(1a) CX=(p i -X)cos θ z+(q i -Y)sin θ z……(1a)
CY=-(pi-X)sin θ z+(qi-Y)cos θ z……(1b) CY=-(p i -X)sin θ z+(q i -Y)cos θ z……(1b)
此處,X、Y、θ z分別顯示基板保持具34在X軸方向、Y軸方向及θ z方向之位置。又,pi、qi,為讀頭66a~66d各自之X位置(X座標值)、Y位置(Y座標值)。本實施形態中,讀頭66a、66b、66c、66d各自之X座標值pi及Y座標值qi(i=1,2,3,4),係從自前述之四個X線性編碼器96x、四個Y線性編碼器96y之輸出算出之一對讀頭單元60(參照圖1)各自在X軸方向及Y軸方向之位置資訊(Y滑動平台62之中心在X軸方向及Y軸方向之位置),根據各讀頭相對於Y滑動平台62中心之已知位置關係簡單地算出。
Here, X, Y, and θz respectively indicate the positions of the
是以,基板保持具34與一對讀頭單元60成為如圖18(A)所示之位置關係,此時若基板保持具34在XY平面內之3自由度方向之位
置為(X,Y,θ z),則三個讀頭66a、66c、66d之測量值,理論上能以下式(2a)~(2c)(亦稱為仿射轉換之關係)表示。
Therefore, the
C1=(p1-X)cos θ z+(q1-Y)sin θ z……(2a) C1=(p 1 -X)cos θ z+(q 1 -Y)sin θ z……(2a)
C3=-(p3-X)sin θ z+(q3-Y)cos θ z……(2b) C 3 =-(p 3 -X)sin θ z+(q 3 -Y)cos θ z……(2b)
C4=(p4-X)cos θ z+(q4-Y)sin θ z……(2c) C 4 =(p 4 -X)cos θ z+(q 4 -Y)sin θ z……(2c)
在基板保持具34位於座標原點(X,Y,θ z)=(0,0,0)之基準狀態下,透過聯立方程式(2a)~(2c),成為C1=p1,C3=q3,C4=p4。基準狀態,例如為基板保持具34中心(與基板P中心大致一致)一致於投影光學系16之投影區域之中心,θ z旋轉為零之狀態。是以,基準狀態下,亦能藉由讀頭66b測量基板保持具34之Y位置,讀頭66b之測量值C2,按照式(1b)為C2=q2。
In the reference state where the
是以,在基準狀態下,只要將三個讀頭66a、66c、66d之測量值分別初始設定為p1、q3、p4,其後相對於基板保持具34之位移(X,Y,θ z),三個讀頭66a、66c、66d即會提示以式(2a)~(2c)所賦予之理論值。
Therefore, in the reference state, as long as the measurement values of the three
此外,在基準狀態下,亦可取代讀頭66a、66c、66d之任一個、例如讀頭66c,將讀頭66b之測量值C2初始設定為q2。
In addition, in the reference state, instead of any one of the reading heads 66a, 66c, and 66d, for example, the reading
此情形下,相對於其後基板保持具34之位移(X,Y,θ z),三個讀頭66a、66b、66d即會提示以式(2a)、(2c)、(2d)所賦予之理論值。
In this case, relative to the displacement (X, Y, θ z) of the
C1=(p1-X)cos θ z+(q1-Y)sin θ z……(2a) C 1 =(p1-X)cos θ z+(q 1 -Y)sin θ z……(2a)
C4=(p4-X)cos θ z+(q4-Y)sin θ z……(2c) C 4 =(p 4 -X)cos θ z+(q 4 -Y)sin θ z……(2c)
C2=-(p2-X)sin θ z+(q2-Y)cos θ z……(2d) C 2 =-(p 2 -X)sin θ z+(q 2 -Y)cos θ z……(2d)
聯立方程式(2a)~(2c)及聯立方程式(2a)、(2c)、(2d),對於變數為三個(X,Y,θ z)係賦予三個式。是以,相反的,只要賦予聯立方程式(2a)~(2c)中之從屬變數C1、C3、C4、或者聯立方程式(2a)、(2c)、(2d)中之從屬變數C1、C4、C2,即能求出變數X,Y,θ z。此處,即使適用近似sin θ z≒θ z、或者適用高次之近似,亦能容易地解方程式。是以,能從讀頭66a、66c、66d(或讀頭66a、66b、66d)之測量值C1、C3、C4(或C1、C2、C4)算出晶圓載台WST之位置(X,Y,θ z)。
Simultaneous formulas (2a)~(2c) and simultaneous formulas (2a), (2c), (2d), for three variables (X, Y, θ z), three formulas are assigned. Therefore, on the contrary, just assign the subordinate variables C 1 , C 3 , C 4 in the simultaneous formulas (2a)~(2c), or the subordinate variables in the simultaneous formulas (2a), (2c), (2d) C 1 , C 4 , C 2 , that is, the variables X, Y, and θ z can be calculated. Here, even if the approximation sin θ z≒θ z is applied, or the higher order approximation is applied, the equation can be solved easily. Therefore, the measured values C 1 , C 3 , C 4 (or C 1 , C 2 , C 4 ) of the
其次,針對以本第2實施形態之液晶曝光裝置進行之用以測量基板保持具34之位置資訊之、基板編碼器系統之讀頭切換時中之接續處理,亦即測量值之初始設定,以主控制裝置90之動作為中心進行說明。
Next, for the liquid crystal exposure apparatus of the second embodiment to measure the position information of the
本第2實施形態中,如前所述,在基板保持具34之有効行程範圍中隨時有三個編碼器(X讀頭及Y讀頭)測量基板保持具34之位置資訊,在進行編碼器(X讀頭或Y讀頭)之切換處理時,例如如圖20(B)所示,成為四個讀頭66a~66d之各個對向於任一標尺152而能測量基板保持具34位置之狀態(前述第5狀態)。圖20(B)係顯示如圖20(A)所示,顯示從以讀頭66a、66b及66d測量基板保持具34位置之狀態,基板保持具34往+X方向移動而如圖20(C)所示,遷移至以讀頭66b、66c、66d測量基板保持具34位置之狀態之途中出現的第5狀態之一例。亦即,圖20(B),係顯示用於測量基板保持具34之位置資訊之三個讀頭從讀頭66a、66b、66d切換至讀頭66b、66c、66d之途中的狀態。
In the second embodiment, as described above, three encoders (X head and Y head) measure the position information of the
在欲進行用於基板保持具34在XY平面內之位置控制(位
置資訊之測量)之讀頭(編碼器)之切換處理(接續)的瞬間,如圖20(B)所示,讀頭66a、66b、66c及66d,分別對向於標尺152b、152b、152d、152e。在乍看圖20(A)至圖20(C)時,雖圖20(B)中似乎係從讀頭66a欲切換至讀頭66c,但在讀頭66a與讀頭66c,從測量方向不同這點亦可清楚看出,即使在欲進行接續之時點將讀頭66a之測量值(計數值)直接作為讀頭66c之測量值之初始值賦予,亦無任何意義。
When you want to control the position of the
因此,本實施形態中,主控制裝置90,係從使用三個讀頭66a、66b及66d之基板保持具34之位置資訊之測量(以及位置控制),切換至使用三個讀頭66b、66c、66d之基板保持具34之位置資訊之測量(以及位置控制)。亦即,此方式與一般編碼器接續之概念不同,並非係從某讀頭接續至另一讀頭,而係從三個讀頭(編碼器)之組合接續至另一三個讀頭(編碼器)之組合。
Therefore, in this embodiment, the
主控制裝置90,首先根據讀頭66a、66d及66b之測量值C1、C4、C2解聯立方程式(2a)、(2c)、(2d),算出基板保持具在XY平面內之位置資訊(X,Y,θ z)。
The
其次,主控制裝置90,係對下式(3)之仿射轉換之式代入以上算出之X,θ z,求出讀頭66c之測量值之初始值(讀頭66c所待測量之值)。
Next, the
C3=-(p3-X)sin θ z+(q3-Y)cos θ z……(3) C 3 =-(p 3 -X)sin θ z+(q 3 -Y)cos θ z……(3)
上式(3)中,p3,q3係讀頭66c之測量點之X座標值、Y座標值。本實施形態中,X座標值p3及Y座標值q3係如前所述使用下述值,亦即從自四
個X線性編碼器96x與四個Y線性編碼器96y之輸出算出之一對讀頭單元60各自之Y滑動平台62中心在X軸方向及Y軸方向之位置,根據讀頭66c相對Y滑動平台62中心之已知位置關係算出的值。
In the above formula (3), p 3 , q 3 are the X coordinate value and Y coordinate value of the measuring point of the reading
藉由將上述初始值C3作為讀頭66c之初始值賦予,而在維持基板保持具34之3自由度方向之位置(X,Y,θ z)之狀態下,無衝突地結束接續。其後,使用切換後使用之讀頭66b、66c、66d之測量值C2、C3、C4解次一聯立方程式(2b)~(2d),算出晶圓載台WST之位置座標(X,Y,θ z)。
By assigning the aforementioned initial value C 3 as the initial value of the read
C3=-(p3-X)sin θ z+(q3-Y)cos θ z……(2b) C 3 =-(p 3 -X)sin θ z+(q 3 -Y)cos θ z……(2b)
C4=(p4-X)cos θ z+(q4-Y)sin θ z……(2c) C 4 =(p 4 -X)cos θ z+(q 4 -Y)sin θ z……(2c)
C2=-(p2-X)sin θ z+(q2-Y)cos θ z……(2d) C 2 =-(p 2 -X)sin θ z+(q 2 -Y)cos θ z……(2d)
此外,以上雖說明了從三個讀頭切換至包含一個與此三個讀頭不同之另一讀頭之三個讀頭,但此係因使用從切換前之三個讀頭之測量值求出之基板保持具34之位置(X,Y,θ z)將待以切換後所使用之另一讀頭測量之值根據仿射轉換之原理算出,並將該算出之值設定為切換後所使用之另一讀頭之初始值,故作了如上之說明。然而,若忽略待以切換後所使用之另一讀頭測量之值之算出等流程,而僅著眼於作為切換及接續處理之直接對象之兩個讀頭,則也可以說是將切換前所使用之三個讀頭中之一個讀頭切換至另一個讀頭。不論如何,讀頭之切換,係在切換前用於基板保持具之位置資訊之測量及位置控制之讀頭與切換後所使用之讀頭均同時對向於任一標尺152之狀態下進行。
In addition, although it has been explained above to switch from three reading heads to three reading heads that include a different reading head from the three reading heads, this is due to the use of the measured values of the three reading heads before switching. The position (X, Y, θ z) of the
此外,以上說明雖係讀頭66a~66d之切換之一例,但不論係任三個讀頭至另外三個讀頭之切換或任一讀頭至另一讀頭之切換,均係以與上述說明相同之流程進行讀頭切換。
In addition, although the above description is an example of the switching of reading
此外,如本第2實施形態所示,將格子部以複數個標尺(二維光柵RG)構成時,分別被照射測量光束之標尺彼此、更嚴謹地說係形成於各標尺之格子(二維光柵RG)相互偏移,則會產生編碼器系統之測量誤差。 In addition, as shown in the second embodiment, when the grid portion is composed of a plurality of scales (two-dimensional grating RG), the scales respectively irradiated with the measuring beam are formed on the grid (two-dimensional grating RG) of each scale. The offset of the grating RG) will cause the measurement error of the encoder system.
又,本第2實施形態,因應基板保持具34之X位置,用於基板保持具34之位置資訊測量及位置控制之至少三個讀頭之測量光束所照射之至少兩個標尺152之組合係不同,換言之,能考量此等至少兩個標尺之組合之各個存在座標系,若因例如至少兩個標尺之相對位置變動等而使此等座標系間產生偏移(柵誤差),則會產生編碼器系統之測量誤差。此外,至少兩個標尺之相對位置關係由於會長期地變化,因此柵誤差、亦即測量誤差亦會變動。
Furthermore, in the second embodiment, in accordance with the X position of the
然而,本第2實施形態中,在讀頭之切換時,設定切換後之讀頭之初始值之時點,會產生四個讀頭66a~66d全部同時對向於至少兩個標尺152之任一個的第5狀態。在此第5狀態,雖能以四個讀頭全部測量基板保持具34之位置資訊,但由於用以測量基板保持具之位置座標(X,Y,θ z)之讀頭僅需三個,因此會多出一個讀頭。因此,主控制裝置90,係藉由利用此多餘讀頭之測量值,來進行因座標系間之偏移(柵誤差)導致之編碼器系統之測量誤差之修正資訊(柵或格子修正資訊)之取得、以及補償因柵誤差導致之編碼器系統之測量誤差之基板保持具34之驅動(位置控
制)。
However, in the second embodiment, when the read head is switched, when the initial value of the read head after the switch is set, the four read
例如在四個讀頭66a~66d之各個同時對向於至少兩個標尺時,進行2組之三個一組之讀頭對基板保持具之位置座標(X,Y,θ z)之測量,求出藉由其測量而得到之、具體而言即利用前述仿射轉換之式解聯立方程式所得之位置(X,Y,θ z)之差亦即偏置Δx,Δy,Δθ z,將此偏置作為由此時四個讀頭66a~66d所對向之至少兩個標尺之組合構成之座標系之偏置。此偏置,係用在與該至少兩個標尺對向之四個讀頭中之三個讀頭對基板保持具34之位置資訊之測量及基板保持具34之位置控制。此外,由於在進行前述之讀頭之切換及接續處理之前後,切換前用於基板保持具34之位置資訊之測量及位置控制之三個讀頭所對向之至少兩個標尺之組合、與切換後用於基板保持具34之位置資訊之測量及位置控制之三個讀頭所對向之至少兩個標尺之組合當然不同,因此在進行讀頭之切換前後,係將不同之偏置在基板保持具34之位置資訊之測量及位置控制中作為柵或格子修正資訊使用。
For example, when each of the four
此處,作為一例,考量基板保持具34在往+X方向移動之過程中,於成為圖20(A)之狀態之前一刻出現之如下的第5狀態(稱為狀況1之狀態)。亦即,為讀頭66a、66b對向於標尺152b,讀頭66c、66d對向於標尺152e之狀態。在此狀態下,亦能使用讀頭66a~66d中之任一個三個讀頭之組合所構成之2組讀頭求出偏置。然而,在圖20(A)之狀態下,讀頭66c無法測量,為了使此讀頭66c之測量復原,係在圖20(B)所示之第5狀態下,使用從三個讀頭66a、66b、66d之測量值算出之基板保持具之位置座標(X,Y,θ z)。又,在基板保持具34往+X方向移動之過程中,成
為狀況1之狀態前,進行已成為無法測量狀態之讀頭66b之復原。為了復原此讀頭66b,係使用從三個讀頭66a、66c、66d之測量值算出之基板保持具之位置座標(X,Y,θ z)。因此,在狀況1之狀態下,係使用除了三個讀頭66a、66b、66d之組及三個讀頭66a、66c、66d之組以外之三個讀頭之組,亦即三個讀頭66a、66b、66c之組、三個讀頭66b、66c、66d之組取得由標尺152b、152e之組合構成之座標系之格子修正資訊。
Here, as an example, consider the following fifth state (referred to as the state of state 1) that appears immediately before the state of FIG. 20(A) during the movement of the
具體而言,主控制裝置90在狀況1之狀態下,係使用讀頭66a、66b、66c之測量值算出基板保持具34之位置座標(為了方便說明,設為(X1,Y1,θ z1)),且使用讀頭66b、66c、66d之測量值算出基板保持具34之位置座標(為了方便說明,設為(X2,Y2,θ z2))。接著,求出兩個位置之差ΔX=X2-X1、ΔY=Y2-Y1、Δθ z=Δθ z1-Δθ z2,將此偏置作為格子修正資訊儲存於例如內部記憶體(儲存裝置)。
Specifically, the
又,例如在圖20(B)所示之第5狀態下,用於基板保持具34之位置控制之讀頭係從讀頭66a被切換成讀頭66c,此時,係使用三個讀頭66a、66b、66d之測量值依據前述仿射轉換之式算出基板保持具34之位置座標。此時,主控制裝置90,係進行與此位置座標之算出且使用除了三個讀頭66a、66b、66d之組(用於用以進行此讀頭之切換之基板保持具34之位置座標之算出)與用於在次一讀頭之切換時設定切換後之讀頭之測量值之三個讀頭66b、66c、66d之組以外的例如三個讀頭66a、66b、66c之組、以及三個讀頭66a、66b、66d之組、與標尺152b、152e之組合同樣地,在上述讀頭之切換後,取得用於基板保持具34之位置測量及位置控制之讀頭66b、66c、66d所對向之三個標尺152b、152d及152e之組合所構成的座標
系之格子修正資訊(偏置)。
Also, for example, in the fifth state shown in FIG. 20(B), the read head used for position control of the
本實施形態中,主控制裝置90,係針對在基板保持具34於+X方向或-X方向從圖18(A)所示第1位置移動至圖18(B)所示第2位置之過程中依序被切換之用於基板保持具34位置控制之三個讀頭所對向之至少兩個標尺152全部之組合所對應的複數個座標系,以上述流程求出偏置ΔX,ΔY,Δθ z,作為格子修正資訊儲存於儲存裝置。
In this embodiment, the
又,例如,主控制裝置90,亦可在從圖19(A)所示之第1狀態遷移至圖19(B)所示之第2狀態之過程中,讀頭66a,66b對向於標尺152b且讀頭66c,66d對向於標尺152e之第5狀態下,進行前述之讀頭切換及接續處理後,一邊將包含復原之讀頭66b之三個讀頭66a,66b,66d之測量值用於位置控制,一邊在至讀頭66c無法測量為止之基板保持具34之移動中,在複數個位置分別以前述流程取得由標尺152b與標尺152e構成之座標系之格子修正資訊(偏置)。亦即,非依用於基板保持具34之位置測量及位置控制之三個讀頭所對向之至少兩個標尺152之各個組合分別取得一個格子修正資訊,而係取得複數個格子修正資訊。又,亦可在包含用於基板保持具34之位置測量及位置控制之三個讀頭與多餘之一個讀頭之四個讀頭與相同組合之至少兩個標尺152對向之期間,使用上述方法實質連續地取得格子修正資訊。此情形下,能在組合相同之至少兩個標尺152中四個讀頭所對向之期間(區間)之全區取得格子修正資訊。此外,依用於基板保持具34之位置測量及位置控制之三個讀頭所對向之至少兩個標尺152之各個組合所取得之格子修正資訊可非為相同數目,例如可依標尺組合不同而使取得之格子修正資訊之數目不同。例如,亦可使在曝光動作中三個讀頭
所對向之至少兩個標尺152之組合與在曝光動作以外(對準動作、基板交換動作等)中三個讀頭所對向之至少兩個標尺152之組合的格子修正資訊之數目不同。又,本實施形態中,作為一例,係在對基板保持具34裝載基板前或裝載後且在基板處理動作(包含曝光動作或對準動作等)前,針對用於基板保持具34之位置測量及位置控制之三個讀頭所對向之至少兩個標尺152之全部組合取得格子修正資訊並儲存於儲存裝置,定期或隨時陸續進行格子修正資訊之更新。格子修正資訊之更新,只要在例如能進行基板處理動作之狀態,可在亦包含基板處理動作中之任意時點進行。
Also, for example, the
此外,實際上,雖亦可在一次取得所需之全部格子修正資訊(偏置ΔX,ΔY,Δθ z)後,每於進行讀頭切換時進行偏置ΔX,ΔY,Δθ z之更新,但不一定要如此作,亦可在每於進行既定次數之讀頭切換時、或者每於既定片數之基板曝光結束等,以預先決定之時距進行偏置ΔX,ΔY,Δθ z之更新。亦可在不進行讀頭之切換之期間中進行偏置之取得、更新。又,上述之偏置更新亦可在曝光動作前進行,若有必要亦可在曝光動作中進行。 In addition, in fact, it is also possible to update the offset ΔX, ΔY, Δθ z every time the head is switched after obtaining all the required grid correction information (offset ΔX, ΔY, Δθ z) at one time, but This is not necessary, and the offsets ΔX, ΔY, and Δθ z may be updated at a predetermined time interval every time the head is switched for a predetermined number of times, or every time the exposure of a predetermined number of substrates ends. It is also possible to obtain and update the offset during the period when the read head is not switched. In addition, the above-mentioned offset update can also be performed before the exposure operation, or during the exposure operation if necessary.
此外,亦可使用上述之各偏置,修正例如基板保持具34之驅動時之定位或位置控制之目標值,而非修正基板編碼器系統50之測量資訊(位置座標),在此情形下,能補償基板保持具34之位置誤差(在未進行目標值之修正時發生之柵誤差所導致之位置誤差)。
In addition, the above-mentioned offsets can also be used to correct, for example, the target value of positioning or position control when the
此外,在使用標尺(格子區域)與讀頭之編碼器系統,已知會因標尺或讀頭、或者在測量方向以外之方向(非測量方向)之兩者之相對運動等而產生測量誤差。起因於標尺之測量誤差(以下稱為標尺起因誤 差),有因形成於標尺之格子區域之變形、位移、平坦性、或者形成誤差等而產生之測量誤差。又,起因於讀頭之誤差(以下稱為讀頭起因誤差),有因讀頭之位移(除了測量方向之位移以外,亦包含旋轉、倒塌等)或光學特性而產生之測量誤差。此外,已知亦會產生阿貝起因誤差。 In addition, in an encoder system using a scale (grid area) and a reading head, it is known that measurement errors may occur due to the relative movement of the scale or reading head, or in a direction other than the measurement direction (non-measurement direction). The measurement error caused by the ruler (hereinafter referred to as the ruler error Poor), there are measurement errors due to deformation, displacement, flatness, or formation errors formed in the grid area of the scale. In addition, the error caused by the reading head (hereinafter referred to as the reading head caused error) includes measurement errors caused by the displacement of the reading head (in addition to the displacement in the measurement direction, rotation, collapse, etc.) or optical characteristics. In addition, it is known that Abbe-caused errors will also occur.
本第2實施形態之液晶曝光裝置,為了補償如上述之編碼器系統之測量誤差而使用修正資訊。此處,只要求出編碼器之測量誤差,則能將該測量誤差直接作為修正資訊使用。 The liquid crystal exposure apparatus of the second embodiment uses correction information in order to compensate for the measurement error of the encoder system as described above. Here, only the measurement error of the encoder is required, and the measurement error can be directly used as correction information.
最初,說明由設於一對讀頭單元60下端側之各兩個之讀頭66a,66b、以及66c,66d與此等讀頭所對向之標尺152構成之編碼器系統(以下稱為保持具編碼器系統)之測量誤差。
Initially, the encoder system (hereinafter referred to as the "holding") composed of two
〈標尺起因誤差〉 〈Cause error of scale〉
〈因標尺之凹凸(平坦性)所導致之測量誤差之修正資訊〉 <Correction information for measurement errors caused by the unevenness (flatness) of the ruler>
在保持具編碼器系統之各讀頭之光軸大致一致於Z軸且基板保持具34之縱搖量、橫搖量及偏搖量全部為零之情形下,應不會產生起因於基板保持具34姿勢之各編碼器之測量誤差。然而,實際上,即使係此種情形下,各編碼器之測量誤差亦不會成為零。其原因為,標尺152之格子面(例如表面)非為理想平面,會有些許凹凸存在之故。若於標尺之格子面具有凹凸,則即使基板保持具34在與XY平面平行地移動之情形,標尺格子面亦會相對於讀頭在Z軸方向位移(或上下動)或傾斜。如此,其結果除了會在讀頭與標尺產生在非測量方向之相對運動以外,此種相對運動還會成為測量誤差之要因,關於此點已如前述。
When the optical axis of each read head holding the encoder system is roughly the same as the Z axis and the pitch, roll and yaw of the
因此,本第2實施形態之液晶曝光裝置例如在維護時等,主
控制裝置90,即將基板保持具34,一邊在以使其縱搖量、橫搖量及偏搖量全部維持於零之狀態下以作為測距基準之測量裝置例如干渉儀系統測量基板保持具34之X位置,一邊使固定有基板保持具34之微動載台32(以下適當簡稱為「基板保持具34」)移動於+X方向或-X方向。為了實現此種測量,本實施形態中,係在維護時等,於基板保持具34安裝必要數目之具有平坦度高之既定面積之反射面的反射構件。但不限於此,亦可假定干渉儀系統之使用,而預先於基板保持具34各端面之既定位置形成平坦度高之既定面積之反射面。
Therefore, the liquid crystal exposure apparatus of the second embodiment is mainly used for maintenance, for example,
The
在上述之基板保持具34在X軸方向之移動中,主控制裝置90,係使用具有高測量分解能力之感測器進行標尺152表面之Z位置測量,以既定取樣間隔擷取感測器之測量值與干渉儀系統之測量值並保存於儲存裝置。此處,基板保持具34之移動,較佳為以能忽視干渉儀系統之空氣波動所導致之測量誤差之程度的較低速度進行。接著,主控制裝置90,根據該擷取之各測量值求出感測器之測量值與干渉儀之測量值之關係。例如能求出表示標尺格子面(二維光柵RG之格子面)之凹凸之函數Z=fi(x)作為上述關係。此處,x為以干渉儀測量之基板保持具34之X位置。此外,在有求出標尺格子面之凹凸作為x,y之函數之必要時,例如只要根據Y讀頭66y之測量值,以既定節距使基板保持具34往Y軸方向移動並定位,並在各定位位置反覆如上所述一邊使基板保持具34移動於X軸方向、一邊同時擷取干渉儀之測量值與感測器之測量值的動作即可。藉此,求出表示標尺152表面凹凸之函數Z=gi(x,y)。此處,i為用以識別複數個標尺152之編號。
In the above-mentioned movement of the
此外,例如亦可如美國專利第8,675,171號說明書所揭示,使用保持具編碼器系統本身求出表示標尺格子面凹凸之函數Z=fi(x)或Z=gi(x,y)。具體而言,亦可對於保持具編碼器系統之任一編碼器讀頭,將以上述美國專利說明書所揭示之方法找出對基板保持具34之傾斜動作不具有感度之點、亦即找出不論基板保持具34相對XY平面之傾斜角度為何編碼器之測量誤差均為零之特異點的動作,針對標尺上之複數個測量點加以進行,藉此求出表示標尺格子面之凹凸之函數Z=fi(x)或Z=gi(x,y)。此外,標尺格子面之凹凸資訊不限於函數,亦可以圖(map)之形式儲存。
In addition, for example, as disclosed in the specification of US Patent No. 8,675,171, the holder encoder system itself can be used to obtain the function Z=f i (x) or Z=g i (x,y) representing the unevenness of the grid surface of the scale. Specifically, for any encoder reading head that holds the encoder system, the method disclosed in the above-mentioned US patent specification will be used to find out the points that are not sensitive to the tilting action of the
〈標尺之格子節距之修正資訊及格子變形之修正資訊〉 <Correction information of the grid pitch of the ruler and correction information of the grid deformation>
編碼器之標尺,會隨著使用時間之經過而因熱膨張等其他原因使繞射格子變形或繞射格子之節距局部地或整體地變化等,欠缺機械性之長期穩定性。因此,由於其測量值所含之誤差隨著使用時間之經過而變大,因此有修正其之必要。 The scale of the encoder will deform the diffraction grid due to thermal expansion or other reasons with the passage of time, or the pitch of the diffraction grid will change locally or as a whole, etc., which lacks mechanical long-term stability. Therefore, since the error contained in the measured value increases with the passage of time, it is necessary to correct it.
標尺之格子節距之修正資訊及格子變形之修正資訊,例如係在液晶曝光裝置之維護時等例如以如下方式取得。在此取得動作前,進行上述之各標尺之格子面之凹凸資訊之測量,表示凹凸之函數Z=fi(x)或Z=gi(x,y)儲存於儲存裝置內。 The correction information of the grid pitch of the ruler and the correction information of the grid deformation are obtained, for example, in the following manner during the maintenance of the liquid crystal exposure device. Before this acquisition operation, the above-mentioned measurement of the concave-convex information of the grid surface of each ruler is performed, and the function Z=f i (x) or Z=g i (x, y) representing the concave-convex is stored in the storage device.
主控制裝置90,首先將儲存於儲存裝置內之函數Z=fi(x)(或Z=gi(x,y))讀入內部記憶體。
The
其次,主控制裝置90,係將基板保持具34,一邊在以使其縱搖量、橫搖量及偏搖量全部維持於零之狀態下以例如干渉儀系統測量基板保持具34之X位置,一邊使基板保持具34移動於+X方向或-X方向。
此基板保持具34之移動,亦較佳為以能忽視干渉儀系統之空氣波動所導致之測量誤差之程度的較低速度進行。在此移動中,主控制裝置90,係一邊使用上述函數z=fi(x)修正由讀頭66a與取得對象之標尺152構成之X線性編碼器(以下適當簡稱為X編碼器)之測量值(輸出),一邊以既定取樣間隔擷取該修正後之測量值與干渉儀之測量值,根據該擷取之各測量值求出X線性編碼器之測量值(與X編碼器之輸出-函數fi(x)對應之測量值)與干渉儀之測量值之關係。亦即,以此方式,主控制裝置90,求出伴隨基板保持具34之移動而依序對向配置於讀頭66a之標尺152之二維光柵RG之以X軸方向作為週期方向之繞射格子(X繞射格子)之格子節距(相鄰格子線之間隔)及該格子節距之修正資訊。作為此格子節距之修正資訊,例如,能求出將横軸作為干渉儀之測量值、縱軸作為編碼器之測量值(因標尺面凹凸所導致之誤差被修正後之測量值)時之兩者關係以曲線表示的修正圖等。
Next, the
上述之格子節距及該格子節距之修正資訊之取得,在針對構成第1格子群之相鄰之複數個標尺152進行之情形,係在來自讀頭66a之測量光束變成不照射於最初之標尺152後並開始照射於相鄰之標尺、而再度開始來自讀頭之檢測訊號之輸出之時點,將由讀頭66a與取得對象之標尺152構成之X線性編碼器之測量值之初始值設定為該時點之干渉儀之測量值,開始針對該相鄰之標尺152之測量。以此方式,進行對構成第1格子群之標尺152之列的測量。
The acquisition of the grid pitch and the correction information of the grid pitch is performed on the adjacent
針對構成第2格子群之各標尺152亦與上述同樣地(不過,係取代讀頭66a改使用讀頭66d)進行格子節距及該格子節距之修正資訊之
取得。
For each of the
與上述之格子節距之修正資訊之取得並行地,以既定取樣間隔進行讀頭66b之測量值與干渉儀之測量值之擷取,根據所擷取之各測量值求出讀頭66b之測量值與干渉儀之測量值之關係。在擷取讀頭66b之測量值時,係將讀頭66b(由讀頭66b與對向之標尺152構成之Y線性編碼器(以下適當簡稱為Y編碼器)之初始值設為既定值例如零後開始測量。藉此,能取得讀頭66b所對向之標尺152之二維光柵RG之以Y軸方向作為週期方向之繞射格子(Y繞射格子)之格子線彎曲及其修正資訊。作為此格子線彎曲之修正資訊,例如能求出將横軸作為干渉儀之測量值、縱軸作為讀頭66b之測量值時之兩者關係以曲線表示的修正圖等。上述之格子線彎曲之修正資訊之取得,在針對構成第1格子群之相鄰之複數個標尺152進行之情形,係在來自讀頭66b之測量光束變成不照射於最初之標尺152後並開始照射於相鄰之標尺、而再度開始來自讀頭之檢測訊號之輸出之時點,將讀頭66b之測量值之初始值設定為既定值例如零,而再度開始測量。
In parallel with the acquisition of the correction information of the grid pitch described above, the measurement value of the read
針對構成第2格子群之各標尺152亦與上述同樣地(不過,係取代讀頭66b改使用讀頭66c)進行格子線彎曲之修正資訊之取得。此外,亦可根據依各標尺拍攝二維光柵RG而取得之格子資訊(節距、變形等)來取得修正資訊。
For each of the
〈在非測量方向之讀頭與標尺之相對運動所導致之測量誤差〉 <Measurement error caused by the relative movement of the reading head and the ruler in the non-measurement direction>
此外,在基板保持具34往與測量方向例如X軸方向(或Y軸方向)不同之方向移動,於讀頭66x(或讀頭66y)與標尺52之間產生欲測量之方向
以外之相對運動(非測量方向之相對運動)時,絕大多數之情形下,會因此使X編碼器(或Y編碼器)產生測量誤差。
In addition, when the
因此,本實施形態,係在例如曝光裝置之啟動時或維護時等,以下述方式取得修正上述因往非測量方向之讀頭與標尺之相對運動所導致之各編碼器之測量誤差的修正資訊。 Therefore, in this embodiment, for example, at the time of activation or maintenance of the exposure device, the correction information for the measurement error of each encoder caused by the relative movement of the reading head and the ruler in the non-measurement direction is obtained in the following manner. .
a.首先,主控制裝置90,一邊監控與修正資訊取得對象之編碼器系統不同之測量系統、例如前述干渉儀系統等之測量值,一邊透過基板驅動系93驅動基板保持具34,使讀頭66a對向於第1格子群之任意標尺152之任意區域(為了說明方便,稱為校正區域)。
a. First, the
b.接著,主控制裝置90根據干渉儀系統之測量值,以使基板保持具34之橫搖量θ x及偏搖量θ z均為零且縱搖量θ y成為所期望之值α0(此處,為α0=200μrad。)之方式,驅動基板保持具34,於該驅動後從讀頭66a對標尺152之校正區域照射測量光束,將與來自已接收其反射光之讀頭66a之光電轉換訊號相應的測量值儲存於內部記憶體。
b. Next, the
c.其次,主控制裝置90,係一邊根據干渉儀系統之測量值維持基板保持具34之姿勢(縱搖量θ y=α0,偏搖量θ z=0,橫搖量θ x=0),一邊將基板保持具34在既定範圍內、例如-100μm~+100μm之範圍內驅動於Z軸方向,在該驅動中從讀頭66a對標尺152之校正區域照射檢測光,且以既定取樣間隔依序擷取與來自已接收其反射光之讀頭66a之光電轉換訊號相應的測量值,並儲存於內部記憶體。此外,在上述測量時,亦能以Z傾斜位置測量系98測量基板保持具34在Z軸方向、θ x方向及θ y方向之位置。
c. Secondly, the
d.其次,主控制裝置90根據干渉儀系統之測量值將基板保持具34之縱搖量θ y變更為(α=α0-Δα)。
d. Next, the
e.其次,針對該變更後之姿勢,反覆與上述c.相同之動作。 e. Secondly, for the posture after the change, repeat the same as above c. The same action.
f.其後,交互反覆上述d.與e之動作,針對縱搖量θ y為例如-200μrad<θ x<+200μrad之範圍,以Δα(rad)、例如40μrad間隔擷取上述Z驅動範圍內之讀頭66a之測量值。
f. Thereafter, interactively repeat the above d. With the action of e, for the pitch amount θ y in the range of -200 μrad<θ x<+200 μrad, the measured value of the
g.其次,將藉由上述b.~e.之處理而取得之內部記憶體內之各資料描繪(plot)於横軸為Z位置、縱軸為編碼器計數值之二維座標系上,依序連結縱搖量相同時之描繪點,並以縱搖量為零之線(中央旁之線)通過原點之方式在縱軸方向位移横軸,藉此取得顯示與基板保持具34之Z調平相應之編碼器(讀頭)之測量值之變化特性的圖23之圖表。
g. Secondly, by the above b. ~e. The data in the internal memory obtained by the processing is plotted (plot) on the two-dimensional coordinate system with the horizontal axis as the Z position and the vertical axis as the encoder count value, and sequentially connect the plot points when the pitch amount is the same, and use The line where the pitch amount is zero (the line next to the center) passes through the origin and shifts the horizontal axis in the direction of the vertical axis, thereby obtaining the measurement value of the encoder (read head) corresponding to the Z level of the
此圖23之圖表上各點之縱軸值,必為在縱搖量θ y=α之各Z位置中之編碼器之測量誤差。因此,主控制裝置90,係將此圖表上各點之縱搖量θ y、Z位置、編碼器測量誤差作為表資料,將該表資料作為由該讀頭66a與標尺152之X繞射格子構成之X編碼器之保持具位置起因誤差修正資訊儲存於記憶體。或者,主控制裝置90,係將測量誤差作為Z位置z、縱搖量θ y之函數,透過例如最小平方法算出未定係數據以求出其函數,將該函數作為保持具位置起因誤差修正資訊儲存於儲存裝置。
The vertical axis value of each point on the graph of Fig. 23 must be the measurement error of the encoder in each Z position where the pitch θ y = α. Therefore, the
h.其次,主控制裝置60,一邊監控干渉儀系統之測量值,一邊透過基板驅動系93驅動基板保持具34,使讀頭66d(另一個X讀頭66x),對向於第2格子群之任意之標尺152之任意區域(校正區域)。
h. Next, the
i.接著,主控制裝置90,針對該讀頭66d進行與上述相同之處理,將由該讀頭66d與標尺152之X繞射格子構成之X編碼器之修正資訊儲存於儲存裝置。
i. Next, the
j.以後亦同樣地,分別求出由讀頭66b與第1格子群之任意之標尺152之Y繞射格子構成之Y編碼器、以及由讀頭66c與第2格子群之任意之標尺152之Y繞射格子構成之Y編碼器之修正資訊,儲存於儲存裝置。
j. In the same way, the Y encoder consisting of the Y diffraction grid of the
其次,主控制裝置90,係以與使上述縱搖量變化之情形同樣之流程,在將基板保持具34之縱搖量及橫搖量均維持於零之狀態下,使基板保持具34之偏搖量θ z在-200μrad<θ z<+200μrad之範圍依序變化,並在各位置,將基板保持具34在既定範圍內例如-100μm~+100μm之範圍內驅動於Z軸方向,於該驅動中以既定取樣間隔依序擷取讀頭之測量值並儲存於內部記憶體。將此種測量針對全部讀頭66a~66d進行,並以與前述相同之流程,將內部記憶體內之各資料描繪於横軸為Z位置、縱軸為編碼器計數值之二維座標上,依序連結偏搖量相同時之描繪點,並以偏搖量為零之線(中央旁之線)通過原點之方式位移横軸,藉此取得與圖23相同之圖表。接著,主控制裝置90,將所得之與圖23相同之圖表上各點之偏搖量θ z、Z位置z、測量誤差作為表資料,將該表資料作為修正資訊儲存於儲存裝置。或者,主控制裝置90,係將測量誤差作為Z位置z、偏搖量θ z之函數,透過例如最小平方法算出未定係數據以求出其函數,將該函數作為修正資訊儲存於儲存裝置。
Next, the
此處,在基板保持具34之縱搖量非為零且偏搖量非為零之
情形下基板保持具34之Z位置z時之各編碼器之測量誤差,可想成是在該Z位置z時之對應上述縱搖量之測量誤差與對應偏搖量之測量誤差之單純的和(線形和)即可。
Here, the pitch amount of the
以下,為了簡化說明,針對各X編碼器之X讀頭(讀頭66a,66d),求出如以下式(4)所示之表示測量誤差Δx之基板保持具之縱搖量θ y、偏搖量θ z、Z位置z之函數,並儲存於儲存裝置內。又,針對各Y編碼器之Y讀頭(讀頭66b,66c),求出如以下式(5)所示之表示測量誤差Δy之基板保持具34之橫搖量θ x、偏搖量θ z、Z位置z之函數,並儲存於儲存裝置內。
In order to simplify the description below, for the X heads (read
Δx=f(z,θ y,θ z)=θ y(z-a)+θ z(z-b)……(4) Δx=f(z,θ y,θ z)=θ y(z-a)+θ z(z-b)……(4)
Δy=g(z,θ x,θ z)=θ x(z-c)+θ z(z-d)……(5) Δy=g(z,θ x,θ z)=θ x(z-c)+θ z(z-d)……(5)
上式(4)中,a係為了取得X編碼器之修正資訊而已使縱搖量變化時之圖23之圖表之、將縱搖量相同時之描繪點分別連結而成的各直線相交之點的Z座標,b係為了取得X編碼器之修正資訊而已使偏搖量變化時之與圖23相同圖表之、將偏搖量相同時之描繪點分別連結而成的各直線相交之點的Z座標。又,上式(5)中,c係為了取得Y編碼器之修正資訊而已使橫搖量變化時之與圖23相同圖表之、將橫搖量相同時之描繪點分別連結而成的各直線相交之點的Z座標,d係為了取得Y編碼器之修正資訊而已使偏搖量變化時之與圖23相同圖表之、將偏搖量相同時之描繪點分別連結而成的各直線相交之點的Z座標。 In the above formula (4), a is the intersection of the straight lines in the graph of Fig. 23 when the pitch amount has been changed in order to obtain the correction information of the X encoder, and the drawing points when the pitch amount is the same. The Z coordinate of b is the Z of the point where each straight line intersects when the yaw amount has been changed in order to obtain the correction information of the X encoder. The graph is the same as in Fig. 23, and the drawing points when the yaw amount is the same. coordinate. In addition, in the above formula (5), c is the straight line formed by connecting the drawing points when the roll amount is the same in the same graph as in Fig. 23 when the roll amount has been changed in order to obtain the correction information of the Y encoder. The Z coordinate of the intersecting point, d is the same graph as in Fig. 23 when the yaw amount has been changed in order to obtain the correction information of the Y encoder, and each straight line formed by connecting the drawing points when the yaw amount is the same is intersected The Z coordinate of the point.
此外,上述Δx或Δy,由於係顯示X編碼器或Y編碼器
在非測量方向(例如θ y方向或θ x方向、θ z方向及Z軸方向)之基板保持具34之位置影響X編碼器或Y編碼器之測量值之程度,因此在本說明書中稱之為保持具位置起因誤差,由於能將此保持具位置起因誤差直接作為修正資訊使用,因此將此修正資訊稱為保持具位置起因誤差修正資訊。
In addition, the above Δx or Δy, because the X encoder or Y encoder is displayed
The position of the
〈讀頭起因誤差〉 <Reading head cause error>
作為讀頭起因誤差,可代表性地舉出因讀頭之倒塌所導致之編碼器之測量誤差。考量從讀頭66x(或66y)之光軸相對Z軸傾斜之(讀頭66x(或66y)傾斜之)狀態,基板保持具34往Z軸方向位移後之情形(ΔZ≠0,ΔX=0(或ΔY=0))。此情形下,會因讀頭傾斜,而與Z位移ΔZ成正比地使位相差(來自X繞射格子或Y繞射格子之兩個返回光束間之位相差)產生變化,其結果係使編碼器之測量值變化。此外,即使非因讀頭66x(66y)產生倒塌,亦會例如因讀頭之光學特性(遠心等)等而使兩個返回光束之光路之對稱性紊亂,同樣地會使計數值變化。亦即,作為編碼器系統測量誤差產生要因之讀頭單元之特性資訊不僅有讀頭之倒塌,亦包含其光學特性等。
As the error caused by the reading head, the measurement error of the encoder caused by the collapse of the reading head can be representatively cited. Consider the state where the optical axis of the read
本實施形態之液晶曝光裝置,由於在一對Y滑動平台62之各個固定有一對讀頭66a,66b及一對讀頭66c,66d,因此藉由以干渉儀等其他之位移感測器測量Y滑動平台62在θ x方向及θ y方向之傾斜量,即能測量讀頭之倒塌。
In the liquid crystal exposure apparatus of this embodiment, since a pair of reading
不過,本實施形態之液晶曝光裝置,必須留意如下之點。 However, the liquid crystal exposure device of this embodiment must pay attention to the following points.
透過保持具編碼器系統之測量,雖係使用前述之讀頭66a~66d中之三個測量值算出基板保持具34之位置(X,Y,θ z),但用於此算出
之讀頭66a,66b,66c,66d各自之X座標值pi及Y座標值qi(i=1,2,3,4),係從自前述四個X線性編碼器96x與四個Y線性編碼器96y之輸出算出之一對讀頭單元60(參照圖1)各自在X軸方向及Y軸方向之位置資訊(Y滑動平台62之中心在X軸方向及Y軸方向之位置),根據各讀頭相對Y滑動平台62中心之已知位置關係來算出。以下,將由四個X線性編碼器96x與四個Y線性編碼器96y構成之編碼器系統稱為讀頭編碼器系統。是以,讀頭編碼器系統之測量誤差,會成為因保持具編碼器系統之各讀頭之X位移、Y位移所導致之測量誤差之要因。
Through the measurement of the holder encoder system, although the position (X, Y, θ z) of the
又,由於在一對Y滑動平台62之各個固定有一對讀頭66a,66b及一對讀頭66c,66d,因此若於Y滑動平台62產生θ z方向之旋轉誤差,即會於讀頭66a~66d產生相對於對向之二維光柵RG之θ z旋轉誤差。因此,從前述式(4),(5)可清楚得知,會於讀頭66a~66d產生測量誤差。是以,較佳先以干渉儀等其他之位移感測器測量Y滑動平台62之θ z旋轉。本實施形態中,能藉由讀頭編碼器系統檢測Y滑動平台62在θ z方向之旋轉量(偏搖量)、亦即檢測讀頭66a~66d相對於對向之二維光柵RG之θ z旋轉誤差。
In addition, since a pair of reading
〈阿貝起因誤差〉 <Abbe cause error>
此外,若於基板保持具34上之各標尺格子面(二維光柵表面)之高度(Z位置)與包含曝光中心(前述曝光區域之中心)之基準面之高度有誤差(或間隙),則由於會在基板保持具34繞與XY平面平行之軸(Y軸或X軸)之旋轉(縱搖或橫搖)時於編碼器之測量值產生所謂阿貝誤差,因此必須修正此誤差。此處,所謂基準面,係作為用以控制基板保持具34在Z
軸方向之位置之基準的面(作為基板保持具34在Z軸方向之位移之基準的面),或者在基板P之曝光動作中基板P所一致之面,本實施形態中,係與投影光學系16之像面一致。
In addition, if there is an error (or gap) between the height (Z position) of each scale grid surface (two-dimensional grating surface) on the
為了修正上述誤差,必須正確地先求出相對於基準面之各標尺152表面(二維光柵表面)高度之差(所謂阿貝偏移量)。其原因在於,修正上述阿貝偏移量所導致之阿貝誤差,對於為了使用編碼器系統正確地控制基板保持具34在XY平面內之位置是必要的。考慮到此點,在本實施形態中,主控制裝置90係在例如曝光裝置之啟動時以如下流程進行用以求出上述阿貝偏移量之校正。
In order to correct the above-mentioned error, the height difference (the so-called Abbe shift) of each
首先,在開始此校正處理時,主控制裝置90,係驅動基板保持具34而使第1格子群之一個標尺152位於讀頭66a下方,同時使第2格子群之一個標尺152位於讀頭66d下方。例如,如圖20(A)所示,在使標尺152b位於讀頭66a下方之同時使標尺152e位於讀頭66d下方。
First, when the calibration process is started, the
其次,主控制裝置90,根據前述干渉儀系統之測量結果,在基板保持具34相對XY平面在θ y方向之位移(縱搖量)Δθ y非為零之情形,根據干渉儀系統之測量結果以該縱搖量Δθ y成為零之方式,使基板保持具34繞通過曝光中心之與Y軸平行之軸傾斜。此時,干渉儀系統,由於已結束針對各干渉儀(各測量軸)所必需之全部修正,因此能進行上述基板保持具34之縱搖控制。
Secondly, the
接著,在上述基板保持具34之縱搖量之調整後,取得以讀頭66a,66d與此等所對向之標尺152b,152e分別構成之兩個X編碼器之測量值xb0,xe0。
Then, after the adjustment of the pitch of the substrate holder 34, the measured values x b0 and x e0 of the two X encoders formed by the reading heads 66a, 66d and the
其次,主控制裝置90,即根據干渉儀系統之測量結果,使基板保持具34繞通過曝光中心之與Y軸平行之軸傾斜角度。接著,取得上述兩個X編碼器之測量值之測量值xb1,xe1。
Secondly, the
接著,主控制裝置90,根據以上取得之兩個編碼器之測量值xb0,xe0以及xb1,xe1、以及上述角度,算出標尺152b,152e之所謂阿貝偏移量hb,he。此情形下,由於為微小角,因此sin =,cos =1成立。
Next, the
主控制裝置90,係以與上述相同之流程,將第1格子群之一個標尺152及與其在Y軸方向大致對向之第2格子群之一個標尺152作為組,針對剩餘標尺分別取得阿貝偏移量。此外,針對第1格子群之一個標尺152與第2格子群之一個標尺152,不一定要同時進行阿貝偏移量之測量,亦可針對各標尺152分別測量阿貝偏移量。
The
從上式(6),(7)可知,若將基板保持具34之縱搖量設為 y,則伴隨基板保持具34之縱搖之各X編碼器之阿貝誤差Δxabb能以下式(8)表示。
From the above equations (6) and (7), it can be seen that if the pitch of the
式(8)中,h為構成X編碼器之X讀頭所對向之標尺152之阿貝偏移量。
In the formula (8), h is the Abbe offset of the
同樣地,若將基板保持具34之橫搖量設為 x,則伴隨基板保持具34之橫搖之各Y編碼器之阿貝誤差Δyabb能以下式(9)表示。
Similarly, if the roll amount of the
式(9)中,h為構成Y編碼器之Y讀頭所對向之標尺152之阿貝偏移量。
In formula (9), h is the Abbe offset of the
主控制裝置90,將如以上述方式求出之各個標尺152之阿貝偏移量h儲存於儲存裝置。藉此,主控制裝置90,在批量處理中等實際之基板保持具34之位置控制時,能一邊根據式(8)或式(9)修正以保持具編碼器系統測量之在XY平面(移動面)內之基板保持具34之位置資訊所含之阿貝誤差、亦即因標尺152格子面(二維光柵RG表面)相對前述基準面之阿貝偏移量h所導致之與基板保持具34縱搖量相應之各X編碼器之測量誤差、或標尺152格子面(二維光柵RG表面)相對前述基準面之阿貝偏移量h所導致之與基板保持具34橫搖量相應之各Y編碼器之測量誤差,一邊在XY平面內之任意方向高精度地驅動(位置控制)基板保持具34。
The
如前所述,讀頭編碼器系統之測量誤差,會成為因保持具編碼器系統之各讀頭之X位移、Y位移所導致之測量誤差之要因。是以,較佳為針對讀頭編碼器系統,亦在曝光裝置之啟動時或維護時等先取得標尺起因誤差、因在非測量方向之讀頭與標尺之相對運動所導致之測量誤差、以及讀頭起因誤差。讀頭編碼器系統之上述各種測量誤差及其修正資訊,基本上能與前述保持具編碼器系統之測量誤差及其修正資訊同樣地取得,因此詳細說明省略。 As mentioned above, the measurement error of the read head encoder system will become the main cause of the measurement error caused by the X displacement and Y displacement of each read head holding the encoder system. Therefore, it is better for the reader encoder system to obtain the scale-causing error, the measurement error caused by the relative movement of the reader and the scale in the non-measurement direction, and the measurement error caused by the relative movement of the reader and the ruler in the non-measurement direction when the exposure device is activated or during maintenance, and Error caused by the reading head. The aforementioned various measurement errors and correction information of the reader encoder system can basically be obtained in the same way as the aforementioned measurement errors and correction information of the holder encoder system, so the detailed description is omitted.
本第2實施形態中,在批量處理中等實際之基板保持具34之位置控制時,主控制裝置90,能一邊隨著基板保持具34在X軸方向之位置變化進行保持具編碼器系統之讀頭66a~66d之切換,一邊根據用以補償因讀頭66a~66d、該讀頭66a~66d中之三個所對向之至少兩個標尺、以及
基板保持具34之移動之至少一個而產生之基板位置測量系(包含Z傾斜位置測量系98及基板編碼器系統50)之測量誤差的修正資訊(為了說明方便而稱為第1修正資訊)、用以補償標尺56及與該標尺56之X標尺及Y標尺分別對向之各一對X讀頭64x及Y讀頭64y中之一方而產生之讀頭編碼器系統之測量誤差的修正資訊(為了說明方便而稱為第2修正資訊)、以及以基板位置測量系測量之位置資訊,控制基板驅動系93。
In the second embodiment, in the actual position control of the
此處,以基板位置測量系測量之位置資訊,包含Z傾斜位置測量系98對微動載台32位置(Z,θ x,θ y)之測量資訊、構成基板編碼器系統50之一部分之讀頭編碼器系統對Y滑動平台62(亦即讀頭66a~66d)位置(X,Y,θ z)之測量資訊、以及構成基板編碼器系統50一部分之保持具編碼器系統對基板保持具34位置(X,Y,θ z)之測量資訊。第1修正資訊,包含前述保持具編碼器系統之各種測量誤差(標尺起因誤差、因在非測量方向之讀頭與標尺之相對運動所導致之測量誤差(保持具位置起因誤差)、讀頭起因誤差、以及阿貝誤差)之修正資訊。第2修正資訊,包含前述讀頭編碼器系統之各種測量誤差(標尺起因誤差、因在非測量方向之讀頭與標尺之相對運動所導致之測量誤差、讀頭起因誤差)之修正資訊。
Here, the position information measured by the substrate position measurement system includes the measurement information of the Z tilt
是以,例如在基板P之曝光時等,係根據基板保持具34在與X軸方向不同之方向之位置資訊(包含傾斜資訊,例如θ y方向之旋轉資訊等)、X讀頭所對向之標尺152之特性資訊(例如二維光柵RG之格子面之平面度及/或格子形成誤差等)、因標尺152(二維光柵RG之格子面)之阿貝偏移量所導致之阿貝誤差之修正資訊,將測量修正後之基板保持具34之X位置之X編碼器(讀頭66a,66d)之測量值C1,C4用於算出前述基板
保持具34之位置座標(X,Y,θ z)。更具體而言,係藉由主控制裝置90,根據基板保持具34在與X軸方向不同之方向(非測量方向)之位置資訊例如以Z傾斜位置測量系98測量之基板保持具34在θ y方向、θ z方向及Z軸方向之位置資訊所對應之保持具位置起因誤差之修正資訊(以前述式(4)算出之修正資訊)、二維光柵RG之X繞射格子之格子節距之修正資訊(此為考量標尺格子面(二維光柵RG之表面)凹凸(平面度)後之修正資訊)、二維光柵RG之X繞射格子之格子線之彎曲(形成時之誤差及經時變化等)之修正資訊、因標尺52(二維光柵RG之格子面)之阿貝偏移量所導致之阿貝誤差之修正資訊,修正用以測量在X軸方向之基板保持具34之位置資訊之X編碼器(讀頭66a,66d)之測量值,將該修正後之測量值C1,C4用於算出前述基板保持具34之位置座標(X,Y,θ z)。
Therefore, for example, when the substrate P is exposed, it is based on the position information of the
同樣地,根據基板保持具34在與Y軸方向不同之方向之位置資訊(包含傾斜資訊,例如θ x方向之旋轉資訊等)、Y讀頭所對向之標尺152之特性資訊(例如二維光柵RG之格子面之平面度及/或格子形成誤差等)、因標尺152(二維光柵RG之格子面)之阿貝偏移量所導致之阿貝誤差之修正資訊,將測量修正後之基板保持具34之Y位置之Y編碼器(讀頭66b,66c)之測量值C2,C3用於算出前述基板保持具34之位置座標(X,Y,θ z)。更具體而言,係藉由主控制裝置90,根據基板保持具34在與Y軸方向不同之方向(非測量方向)之位置資訊例如以Z傾斜位置測量系98測量之基板保持具34在θ y方向、θ z方向及Z軸方向之位置資訊所對應之保持具位置起因誤差之修正資訊(以前述式(5)算出之修正資訊)、二維光柵RG之Y繞射格子之格子節距之修正資訊(此為考量標尺格子面(二維
光柵RG之表面)凹凸(平面度)後之修正資訊)、二維光柵RG之Y繞射格子之格子線之彎曲(形成時之誤差及經時變化等)之修正資訊、因標尺52(二維光柵RG之格子面)之阿貝偏移量所導致之阿貝誤差之修正資訊,修正用以測量在Y軸方向之基板保持具34之位置資訊之Y編碼器(讀頭66b,66c)之測量值,將該修正後之測量值C2,C3用於算出前述基板保持具34之位置座標(X,Y,θ z)。
Similarly, according to the position information of the
又,本實施形態中,亦能針對由讀頭編碼器系統之各讀頭64x,64y、各讀頭所對向之標尺56構成之X線性編碼器、Y線性編碼器之各個,使用各個修正資訊修正標尺起因誤差、因在非測量方向之讀頭與標尺之相對運動所導致之測量誤差、以及讀頭起因誤差,因此就結果而言,可極度地使使用該修正後之讀頭編碼器系統之各編碼器之測量值算出之保持具編碼器系統之各讀頭之位置座標(pi,qi)不包含誤差。
In addition, in this embodiment, each of the X linear encoders and Y linear encoders composed of the read heads 64x and 64y of the read head encoder system and the
是以,本實施形態中,係一邊使用上述修正後之X編碼器(讀頭66a,66d)之測量值及修正後之Y編碼器(讀頭66b,66c)之測量值中之三個,且使用以上述方式算出之極度不包含誤差之保持具編碼器系統之各讀頭之位置座標(pi,qi),算出基板保持具34之位置座標(X,Y,θ z),一邊控制該基板保持具34之移動。藉此,以補償由用於基板保持具之位置控制之三個讀頭(讀頭66a~66d中之三個)與對向之標尺152構成的三個編碼器之前述標尺起因誤差、保持具位置起因誤差、讀頭起因誤差以及阿貝誤差之全部的方式,驅動(位置控制)基板保持具34。
Therefore, in this embodiment, three of the above-mentioned measured values of the corrected X encoder (read
不過,若前述切換後所使用之編碼器(讀頭)為讀頭66c,則在求出該讀頭66c之測量值初始值時,以前述仿射轉換之式(3)求出之
C3,由於係已修正前述各種編碼器之測量誤差之修正完畢之編碼器之測量值,因此主控制裝置90,係使用前述保持具位置起因誤差修正資訊、標尺之格子節距之修正資訊(以及格子變形之修正資訊)、阿貝偏移量(阿貝誤差修正資訊)等,逆修正測量值C3,算出修正前之原始值C3’,將該原始值C3’作為編碼器(讀頭66c)之測量值之初始值加以求出。
However, if the encoder (read head) used after the aforementioned switch is the read
此處,所謂逆修正,係指將不進行任何修正之編碼器之測量值C3’,假定為使用前述保持具位置起因誤差修正資訊、標尺起因誤差修正資訊(例如標尺之格子節距之修正資訊(以及格子變形之修正資訊)等)、以及阿貝偏移量(阿貝誤差修正資訊)等修正之修正後之編碼器之測量值為C3的前提下,根據測量值C3算出測量值C3’的處理。 Here, the so-called inverse correction refers to the measurement value C 3 ′ of the encoder without any correction, assuming the use of the aforementioned holder position-caused error correction information and ruler-caused error correction information (for example, the correction of the grid pitch of the ruler Information (and correction information of grid deformation), etc.), and Abbe offset (Abbe error correction information), etc. After correction, the measured value of the encoder after correction is C 3 , and the measurement is calculated based on the measured value C 3 Processing of the value C 3'.
以上說明之本第2實施形態之液晶曝光裝置係發揮與前述第1實施形態同等之作用効果。除此之外,根據本第2實施形態之液晶曝光裝置,係在基板保持具34之驅動中,藉由至少包含各一個基板編碼器系統50之X讀頭66x(X線性編碼器)與Y讀頭66y(Y線性編碼器)之三個讀頭(編碼器)測量在XY平面內之基板保持具34之位置資訊(包含θ z旋轉)。接著,藉由主控制裝置90,以在XY平面內之基板保持具34之位置在切換前後被維持之方式,將用於測量在XY平面內之基板保持具34之位置資訊的讀頭(編碼器),從切換前用於基板保持具34之位置測量及位置控制之三個讀頭(編碼器)中之任一讀頭(編碼器)切換至另一讀頭(編碼器)。因此,不論是否已進行用於控制基板保持具34位置之編碼器之切換,均能在切換前後維持基板保持具34在XY平面內之位置,而能正確地接續。是以,能一邊在複數個讀頭(編碼器)間進行讀頭之切換及接續(測
量值之接續處理),一邊沿著既定路徑正確地使基板保持具34(基板P)沿著XY平面移動。
The liquid crystal exposure apparatus of the second embodiment described above exerts the same functions and effects as the above-mentioned first embodiment. In addition, according to the liquid crystal exposure apparatus of the second embodiment, the
又,根據本第2實施形態之液晶曝光裝置,係例如在基板之曝光中,藉由主控制裝置90,根據基板保持具34之位置資訊測量結果與用於測量該位置資訊之三個讀頭在XY平面內之位置資訊((X,Y)座標值),在XY平面內驅動基板保持具34。此情形下,主控制裝置90,係一邊利用仿射轉換之關係算出在XY平面內之基板保持具34之位置資訊一邊在XY平面內驅動基板保持具34。藉此,能一邊使用分別具有複數個Y讀頭66y或複數個X讀頭66x之編碼器系統、一邊在基板保持具34之移動中切換用於控制之讀頭(編碼器),一邊以良好精度控制基板保持具34(基板P)之移動。
In addition, the liquid crystal exposure apparatus according to the second embodiment is, for example, in the exposure of the substrate, the
又,根據本第2實施形態之液晶曝光裝置,係就視基板保持具34之X位置而不同之、用於基板保持具34之位置資訊測量及位置控制之讀頭所對向之標尺之各組合,取得前述偏置ΔX,ΔY,Δθ z(格子修正資訊),並視必要予以更新。是以,能以補償視基板保持具34之X位置而不同之用於基板保持具34之位置資訊測量及位置控制之讀頭所對向之標尺之各組合之座標系間之柵誤差(X,Y位置誤差及旋轉誤差)所導致之編碼器之測量誤差或基板保持具34之位置誤差的方式,驅動(位置控制)基板保持具34。是以,就此點而言,亦能以良好精度控制基板保持具(基板P)位置。
In addition, according to the liquid crystal exposure apparatus of the second embodiment, each of the scales facing the reading head for the position information measurement and position control of the
又,根據本第2實施形態之液晶曝光裝置,在批量處理中等實際之基板保持具34之位置控制時,係藉由主控制裝置90,根據用以補償
保持具編碼器系統之讀頭66a~66d、該讀頭66a~66d中之三個所對向之至少兩個標尺、以及因基板保持具34之移動而產生之基板位置測量系(包含Z傾斜位置測量系98及基板編碼器系統50)之測量誤差之修正資訊(前述第1修正資訊)、用以補償因標尺56及分別對向於該標尺56之X標尺及Y標尺之各一對X讀頭64x及Y讀頭64y以及兩者之相對運動而產生之讀頭編碼器系統之測量誤差的修正資訊(前述第2修正資訊)、以基板位置測量系測量之位置資訊,控制基板驅動系93。是以,能進行如補償分別構成讀頭編碼器系統及保持具編碼器系統之各X編碼器、Y編碼器之前述各種測量誤差的基板保持具34之驅動控制。是以,就此點而言,亦能以良好精度控制基板保持具(基板P)位置。
In addition, according to the liquid crystal exposure apparatus of the second embodiment, when the actual position of the
此外,上述第2實施形態中,係藉由主控制裝置90,根據用以補償因保持具編碼器系統之讀頭66a~66d、該讀頭66a~66d中之三個所對向之至少兩個標尺、以及基板保持具34(微動載台32)之移動而產生之基板位置測量系之測量誤差的修正資訊(第1修正資訊)、用以補償讀頭編碼器系統之前述測量誤差的修正資訊(第2修正資訊)、以及以基板位置測量系測量之位置資訊,控制基板驅動系93。然而,並不限於此,主控制裝置90,亦可根據以基板位置測量系測量之位置資訊與上述第1修正資訊及第2修正資訊中之一方控制基板驅動系93。在此種情形下,能僅根據以基板位置測量系測量之位置資訊,與控制基板驅動系之情形相較能更高精度地驅動(位置控制)基板保持具34。
In addition, in the above-mentioned second embodiment, the
又,上述第2實施形態中,第1修正資訊中包含用以補償因保持具編碼器系統之讀頭66a~66d而產生之基板位置測量系之測量誤差的
修正資訊(讀頭起因誤差之修正資訊)、用以補償因讀頭66a~66d中之三個所對向之至少兩個標尺所導致之基板位置測量系之測量誤差(標尺起因誤差)的修正資訊(標尺起因誤差之修正資訊)、以及用以補償基板保持具34之移動而產生之基板位置測量系之測量誤差(保持具位置起因誤差)的修正資訊之全部。然而,並不限於此,針對保持具編碼器系統,亦可使用補償讀頭起因誤差、標尺起因誤差、以及保持具位置起因誤差之至少一個之修正資訊。此外,阿貝誤差(阿貝起因誤差),係包含於標尺起因誤差及保持具位置起因誤差中之任一者或兩者。又,作為標尺起因誤差之修正資訊,雖係將因標尺凹凸所導致之測量誤差之修正資訊、標尺之格子節距之修正資訊及格子變形之修正資訊之全部用於基板保持具之34之位置控制,但亦可僅使用此等標尺起因誤差中之至少一個修正資訊。同樣地,作為讀頭起因誤差,雖舉出因讀頭位移(包含傾斜、旋轉)所導致之測量誤差與因讀頭光學特性所導致之測量誤差,但亦可僅將此等讀頭起因誤差之至少一個修正資訊用於基板保持具34之位置控制。
In addition, in the above-mentioned second embodiment, the first correction information includes a method for compensating the measurement error of the substrate position measurement system caused by the reading heads 66a~66d of the encoder system.
Correction information (correction information of the error caused by the reading head), correction information used to compensate for the measurement error of the substrate position measurement system caused by at least two rulers facing the three of the reading heads 66a~66d (the error caused by the scale) All of (correction information for the error caused by the scale) and correction information used to compensate for the measurement error (error caused by the position of the holder) of the substrate position measurement system generated by the movement of the
又,上述第2實施形態中,第2修正資訊中包含用以補償因標尺56而產生之讀頭編碼器系統之測量誤差(標尺起因誤差)的修正資訊、用以補償因分別對向於標尺56之X標尺及Y標尺之各一對X讀頭64x及Y讀頭64y而產生之讀頭編碼器系統之測量誤差(讀頭起因誤差)的修正資訊、以及用以補償因標尺56與讀頭64x,64y之相對運動而產生之測量誤差(能稱為Y滑動平台位置起因誤差)的修正資訊之全部。然而,並不限於此,針對讀頭編碼器系統,亦可使用補償讀頭起因誤差、標尺起因誤差、以及Y滑動平台位置起因誤差之至少一個之修正資訊。關於讀頭編碼器系
統亦同樣地,作為標尺起因誤差之修正資訊,亦可將因標尺之凹凸所導致之測量誤差之修正資訊、標尺之格子節距之修正資訊及格子變形之修正資訊中之至少一個之修正資訊,僅用於基板保持具34之位置控制。又,作為讀頭起因誤差,亦可僅將因讀頭位移(包含傾斜、旋轉)所導致之測量誤差、因讀頭光學特性所導致之測量誤差之至少一個之修正資訊用於基板保持具34之位置控制。又,亦可針對讀頭起因誤差、標尺起因誤差、保持具起因誤差等個別取得修正資訊,或針對至少兩個測量誤差取得一個修正資訊。
In addition, in the above-mentioned second embodiment, the second correction information includes correction information for compensating for the measurement error (scale-caused error) of the reader encoder system caused by the
又,與測量基板保持具34位置資訊之編碼器系統之各編碼器同樣地,亦可針對光罩編碼器系統之各讀頭(編碼器),將因在與各編碼器測量方向不同之方向之各讀頭與該各讀頭所對向之標尺之相對運動所導致之讀頭(編碼器)之測量誤差的修正資訊,與前述同樣地求出,並使用該修正資訊修正該讀頭(編碼器)之測量誤差。
In addition, similar to the encoders of the encoder system for measuring the position information of the
此外,上述第2實施形態之液晶曝光裝置中,亦可將在前述維護時等進行之、與用於取得保持具編碼器系統之標尺起因誤差(以及其修正資訊)等之干渉儀系統相同之干渉儀系統設於裝置內。在此種情形下,不僅在維護時等,在裝置之作動中亦能適當地進行保持具編碼器系統之標尺起因誤差之修正資訊等之取得、更新。同樣地,亦可將用於取得讀頭編碼器系統之標尺起因誤差(以及其修正資訊)等之干渉儀等之測量裝置設於裝置內。又,針對上述修正資訊,雖係使用與編碼器系統不同之另一測量裝置(干渉儀等)來取得,但亦可不使用另一測量裝置,而使用編碼器系統或藉由使用測量用晶圓之曝光處理等同樣地取得修正資訊。 In addition, in the liquid crystal exposure apparatus of the second embodiment described above, it is also possible to use the same intervention instrument system used to obtain the scale cause error (and its correction information) of the holder encoder system during the aforementioned maintenance. The interference instrument system is installed in the device. In this case, not only during maintenance, but also during the operation of the device, it is possible to obtain and update the correction information of the scale-causing error of the encoder system appropriately. Similarly, a measuring device such as an interference instrument used to obtain the scale-causing error (and its correction information) of the reader encoder system can also be installed in the device. In addition, although the above-mentioned correction information is obtained by using another measuring device (interferometer, etc.) different from the encoder system, it is also possible to use an encoder system or by using a measuring wafer without using another measuring device. The exposure processing and so on obtain the correction information in the same way.
此外,上述第2實施形態中,雖用以使用從相鄰一對標尺之一個脫離而測量光束移至另一標尺之讀頭(相當於上述另一讀頭)控制基板保持具移動之修正資訊(前述另一讀頭之初始值),係根據以與至少一個標尺152對向之三個讀頭測量之位置資訊來取得,但此修正資訊,只要在另一讀頭之測量光束移至另一標尺後,在與至少一個標尺152對向之三個讀頭之一個從二維光柵RG脫離前取得即可。又,在將與至少一個標尺152對向之三個讀頭切換至包含上述另一讀頭之不同之三個讀頭切換來進行基板保持具之位置測量或位置控制的情形,其切換,只要在取得上述修正資訊後,在與至少一個標尺152對向之三個讀頭之一個從二維光柵RG脫離前進行即可。此外,修正資訊之取得與切換能實質同時地進行。
In addition, in the above-mentioned second embodiment, although the reading head (equivalent to the above-mentioned other reading head) which separates from one of the adjacent pair of scales and moves the measuring beam to the other scale is used to control the correction information for the movement of the substrate holder (The initial value of the other reading head mentioned above) is obtained based on the position information measured by the three reading heads opposite to at least one
此外,上述第2實施形態中,係以在X軸方向(第1方向),無第1格子群之二維光柵RG之區域(非格子區域)與無第2格子群之二維光柵RG之區域(非格子區域)不重疊之方式,換言之,以測量光束從二維光柵RG脫離之非測量期間在四個讀頭不重疊之方式,將第1格子群、第2格子群之各五個標尺152配置於基板保持具34上。此情形下,+Y側之讀頭單元60所具有之讀頭66a,66b,係以較在X軸方向上第1格子群之無二維光柵RG之區域寬度寬的間隔配置,-Y側之讀頭單元60所具有之讀頭66c,66d,係以較在X軸方向上第2格子群之無二維光柵RG之區域寬度寬的間隔配置。然而,包含複數個二維格子之格子部與能與其對向之複數個讀頭的組合不限定於此。扼要言之,只要以在移動體往X軸方向之移動中,測量光束從二維光柵RG脫離之(無法測量之)非測量期間在四個讀頭66a,66b,66c,66d不重疊之方式,設定讀頭66a,66b之間隔及讀頭66c,66d之間
隔、位置、第1,第2格子群之格子部之位置及長度或格子部之間隔及其位置即可。例如,在第1格子群與第2格子群,即使在X軸方向上非格子區域之位置及寬度相同,亦可將與第1格子群之至少一個標尺152(二維光柵RG)對向之兩個讀頭及與第2格子群之至少一個標尺152(二維光柵RG)對向之兩個讀頭,錯開配置在X軸方向上較非格子區域之寬度寬的距離。此情形下,亦可將和第1格子群對向之兩個讀頭中配置於+X側之讀頭與和第2格子群對向之兩個讀頭中配置於-X側之讀頭的間隔,設為較非格子區域寬度寬的間隔,亦可將和第1格子群對向之兩個讀頭與和第2格子群對向之兩個讀頭在X軸方向交互配置,且將相鄰一對讀頭之間隔設定為較非格子區域之寬度寬。
In addition, in the above-mentioned second embodiment, in the X-axis direction (first direction), the two-dimensional grating RG without the first grating group (non-grid area) and the two-dimensional grating RG without the second grating group The area (non-lattice area) does not overlap. In other words, the four read heads do not overlap during the non-measurement period when the measuring beam is separated from the two-dimensional grating RG. The
又,上述第2實施形態中,雖說明了於基板保持具34之+Y側區域配置第1格子群,且於基板保持具34之-Y側區域配置第2格子群的情形,但亦可取代第1格子群及第2格子群中之一方、例如第1格子群,而使用形成有延伸於X軸方向之二維格子之單一標尺構件。此情形下,可有一個讀頭隨時對向於該單一標尺構件。此情形下,可藉由與第2格子群對向地設置三個讀頭,並將該三個讀頭在X軸方向之間隔(測量光束之照射位置間之間隔)設成較相鄰標尺152上之二維光柵RG間之間隔寬,即能不論基板保持具34在X軸方向之位置為何,均使對向於第2格子群之三個讀頭中之至少兩個讀頭對向於第2格子群之至少一個二維光柵RG。或者,亦可採用不論基板保持具34在X軸方向之位置為何,均能隨時有至少兩個讀頭對向於上述單一標尺構件的構成,同時能有至少兩個讀頭對向於第2格子群之至少一個二維光柵RG。此情形下,該至少兩個讀頭分別在基
板保持具34往X軸方向之移動中,測量光束會從複數個標尺152(二維光柵RG)之一個脫離,且會移至與一個標尺152(二維光柵RG)相鄰之另一標尺152(二維光柵RG)。然而,藉由將至少兩個讀頭在X軸方向之間隔設為較相鄰標尺152之二維光柵RG之間隔寬,即在至少兩個讀頭間非測量期間不重疊,亦即隨時以至少一個讀頭將測量光束照射於標尺152。此等構成能隨時由至少三個讀頭與至少一個標尺152對向而測量3自由度方向之位置資訊。
In addition, in the second embodiment described above, although the first lattice group is arranged in the +Y-side area of the
此外,第1格子群與第2格子群之標尺之數目、相鄰標尺之間隔等亦可不同。此情形下,與第1格子群對向之至少兩個讀頭及與第2格子群對向之至少兩個讀頭之讀頭(測量光束)間隔、位置等亦可不同。 In addition, the number of scales of the first grid group and the second grid group, the interval between adjacent scales, etc. may also be different. In this case, at least two reading heads facing the first grid group and at least two reading heads facing the second grid group may have different distances and positions of the reading heads (measuring beams).
此外,上述第2實施形態中,讀頭66a~66d在X軸方向及在Y軸方向之位置,係從自四個X線性編碼器96x與四個Y線性編碼器96y之輸出算出之一對讀頭單元60各自之Y滑動平台62之中心在X軸方向及Y軸方向之位置,根據各讀頭相對於Y滑動平台62之中心之已知位置關係所算出。亦即,讀頭66a~66d之X軸方向及Y軸方向之位置之測量係使用編碼器系統。然而,並不限於此,讀頭66a~66d(一對讀頭單元60),由於僅能移動於Y軸方向,因此亦可使用編碼器系統等測量讀頭66a~66d在Y軸方向之位置資訊。亦即,上述第2實施形態中,四個X線性編碼器96x亦可不一定要設置。此情形下,在對讀頭66a~66d適用前述之式(2a)~(2d)等時,係使用設計值(固定值)作為p1~P4(X位置),q1~q4(Y位置)則使用從四個Y線性編碼器96y之輸出算出之值。此外,在不利用仿射轉換之關係的情形,以讀頭66b,66c測量基板保持具34在Y軸方向之位
置資訊時,係使用四個Y線性編碼器96y之測量資訊,藉由讀頭66a,66d測量基板保持具34在X軸方向之位置資訊時,亦可不使用四個Y線性編碼器96y之測量資訊。
In addition, in the second embodiment described above, the positions of the read heads 66a to 66d in the X-axis direction and the Y-axis direction are calculated from the output of the four X linear encoders 96x and the four Y linear encoders 96y. The positions of the center of the
此外,上述第2實施形態中,雖使用分別形成有單一之二維光柵RG(格子區域)之複數個標尺152,但並不限於此,兩個以上之格子區域中,亦可於第1格子群或第2格子群之至少一方包含在X軸方向分離形成之標尺152。
In the second embodiment described above, although a plurality of
此外,上述第2實施形態中,由於隨時以三個讀頭測量、控制基板保持具34之位置(X,Y,θ z),因此說明了包含相同構成之各五個標尺152之第1格子群與第2格子群,其在X軸方向錯開既定距離配置的情形,但並不限於此,第1格子群與第2格子群,其在X軸方向亦可不錯開(彼此大致完全對向地配置標尺152之列),而在一方之讀頭單元60與另一方之讀頭單元60,使基板保持具34之位置測量用之讀頭(讀頭66x,66y)之配置在X軸方向上相異。此情形下,亦能隨時以三個讀頭測量、控制基板保持具34之位置(X,Y,θ z)。
In addition, in the above-mentioned second embodiment, since the position (X, Y, θ z) of the
此外,上述第2實施形態中,雖說明了使用讀頭66a,66b與讀頭66c,66d之合計四個讀頭的情形,但並不限於此,亦可使用五個以上之讀頭。亦即,亦可於與第1格子群、第2格子群分別對向之各兩個讀頭之至少一方追加至少一個多餘讀頭。關於此構成,使用以下之第3實施形態進行說明。
In addition, in the second embodiment described above, a case where a total of four heads of the
《第3實施形態》 "Third Embodiment"
其次,根據圖21說明第3實施形態。本第3實施形態之液晶曝光裝置
之構成,由於除了基板編碼器系統50之一部分構成以外,其餘均與前述第1及第2實施形態相同,因此以下僅針對相異點進行說明,對與第1及第2實施形態相同構成及功能之要素,賦予與第1及第2實施形態相同之符號,省略其說明。
Next, a third embodiment will be described based on FIG. 21. Liquid crystal exposure device of the third embodiment
The configuration is the same as that of the first and second embodiments except for a part of the
圖21,係以俯視圖顯示本第3實施形態之基板保持具34及基板編碼器系統50之一對讀頭單元60與投影光學系16。圖21中,為了使說明容易理解,省略了編碼器基座54等之圖示。又,圖21中,係以虛線圖示讀頭單元60(Y滑動平台62),且設於Y滑動平台62上面之X讀頭64x,y讀頭64y之圖示亦省略。
FIG. 21 is a plan view showing a pair of the
本第3實施形態之液晶曝光裝置,如圖21所示,係隔著基板保持具34之基板載置區域在+Y側及-Y側之區域分別在X軸方向以既定間隔配置有例如五個標尺152。在配置於基板載置區域之+Y側之五個標尺152與配置於-Y側區域之五個標尺152,其相鄰標尺152間之間隔相同,且基板載置區域之+Y側及-Y側之各五個標尺152彼此係對向而配置於相同之X位置。是以,相鄰標尺152間之間隙之位置,位於大致相同之Y軸方向之既定線寬之直線上。
In the liquid crystal exposure apparatus of the third embodiment, as shown in FIG. 21, the regions on the +Y side and -Y side of the substrate mounting region with the
於位於+Y側之一方之讀頭單元60之Y滑動平台62之下面(-Z側之面),以分別對向於標尺152之狀態,Y讀頭66Y,X讀頭66x及Y讀頭66y之合計三個讀頭從-X側依序在X軸方向分離既定間隔(較相鄰標尺152相互之間隔大之距離)被固定。於位於-Y側之另一方之讀頭單元60之Y滑動平台62之下面(-Z側之面),以分別對向於標尺152之狀態,Y讀頭66y與X讀頭66x在X軸方向分離既定間隔被固定。以下,為
了說明方便,將一方之讀頭單元60所具有之三個讀頭從-X側依序分別稱為讀頭66e、讀頭66a、讀頭66b,將另一方之讀頭單元60所具有之Y讀頭66Y、X讀頭66x分別亦稱為讀頭66c、讀頭66d。
Under the
此情形下,讀頭66a與讀頭66c配置於相同之X位置(相同之Y軸方向之直線上),讀頭66b與讀頭66d配置於相同之X位置(相同之Y軸方向之直線上)。藉由與讀頭66a,66d分別對向之二維光柵RG構成一對X線性編碼器,藉由與讀頭66b,66c,66e分別對向之二維光柵RG構成三個Y線性編碼器。
In this case, the
本第3實施形態之液晶曝光裝置中其他部分之構成,與前述第2實施形態之液晶曝光裝置相同。 The configuration of the other parts of the liquid crystal exposure apparatus of the third embodiment is the same as that of the liquid crystal exposure apparatus of the second embodiment described above.
本第3實施形態中,即使不將+Y側與-Y側之標尺152之列之配置在X軸方向錯開,只要一對讀頭單元60與基板保持具34同步移動於Y軸方向(或在與一對讀頭單元60與標尺152之列對向之位置維持基板保持具34之Y位置),則讀頭66a~66e中之三個,不論基板保持具34之X位置為何均隨時對向於標尺152(二維光柵RG)。
In the third embodiment, even if the rows of
以上說明之本第3實施形態之液晶曝光裝置,發揮與前述第2實施形態之液晶曝光裝置相同之作用効果。 The liquid crystal exposure apparatus of the third embodiment described above exerts the same functions and effects as the liquid crystal exposure apparatus of the second embodiment described above.
此外,上述第3實施形態中,基板保持具34之位置資訊測量用之複數個讀頭,除了切換讀頭所需之四個讀頭、例如讀頭66e,66b,66c,66d以外,亦可包含非測量期間一部分與該四個讀頭中之一個讀頭66c重疊之一個讀頭66a。接著,本第3實施形態,在基板保持具34之位置資訊(X,Y,θ z)之測量中,係使用包含四個讀頭66e,66b,66c,66d與一個讀頭66c
的五個讀頭中測量光束照射於複數個格子區域(二維光柵RG)之至少一個的至少三個讀頭之測量資訊。
In addition, in the third embodiment described above, the plurality of reading heads for measuring the position information of the
此外,上述第3實施形態,複數個讀頭中至少在兩個讀頭有非測量期間重疊之情形,例如兩個讀頭同時從標尺152(格子區域,例如二維光柵RG)脫離,並同時移至相鄰標尺152(格子區域,例如二維光柵RG)的情形之一例。此情形下,即使至少兩個讀頭之測量中斷,為了持續測量必須至少三個讀頭與格子部之格子區域(二維光柵)對向。而且,該至少三個讀頭,係以在測量已中斷之至少兩個讀頭之一個以上移至相鄰之格子區域為止測量不中斷為前提。亦即,即使有非測量期間重疊之至少兩個讀頭,只要除此之外有至少三個讀頭,則即使格子區域隔開間隔配置亦能持續測量。 In addition, in the third embodiment described above, at least two of the plurality of read heads overlap during the non-measurement period. For example, the two read heads are separated from the scale 152 (grid area, for example, two-dimensional grating RG) at the same time. An example of a case where it moves to an adjacent scale 152 (a grid area, for example, a two-dimensional grating RG). In this case, even if the measurement of at least two reading heads is interrupted, in order to continue the measurement, at least three reading heads must be opposed to the grid area (two-dimensional grating) of the grid part. Furthermore, the at least three read heads are based on the premise that the measurement is not interrupted until one or more of the at least two read heads whose measurement has been interrupted move to an adjacent grid area. That is, even if there are at least two reading heads that overlap during the non-measurement period, as long as there are at least three reading heads in addition, the measurement can be continued even if the grid areas are arranged at intervals.
《第4實施形態》 "Fourth Embodiment"
其次,根據圖22說明第4實施形態。本第4實施形態之液晶曝光裝置之構成,如圖22所示,除了分別配置於基板保持具34之基板載置區域之+Y側與-Y側之標尺52之列與第3實施形態同樣地對向配置,且位於-Y側之一方之讀頭單元60與前述第1實施形態同樣地具有各兩個X讀頭66x,y讀頭66y方面,與前述第2實施形態之液晶曝光裝置之構成相異,但其他部分之構成則與第2實施形態之液晶曝光裝置相同。
Next, the fourth embodiment will be described based on FIG. 22. The configuration of the liquid crystal exposure apparatus of the fourth embodiment is the same as that of the third embodiment, except that the rows of
於一方之讀頭單元60之Y滑動平台62之下面(-Z側之面),在Y讀頭66y(讀頭66c)之-Y側相鄰地設有X讀頭66x(以下適當稱為讀頭66e),且在X讀頭66x(讀頭66d)之-Y側相鄰地設有Y讀頭66y(以下適當稱為讀頭66f)。
Under the
本實施形態之液晶曝光裝置中,在一對讀頭單元60移動於Y軸方向之狀態(或在與一對讀頭單元60與標尺152之列對向之位置維持基板保持具34之Y位置之狀態)下,伴隨基板保持具34往X軸方向之移動,雖有三個讀頭66a,66c,66e(稱為第1群組之讀頭)及三個讀頭66b,66d,66f(稱為第2群組之讀頭)之一方,不對向於任一標尺的情形,但此時,第1群組之讀頭與第2群組之讀頭之另一方一定會對向於標尺152(二維光柵RG)。亦即,本第4實施形態之液晶曝光裝置,即使不將+Y側與-Y側之標尺152之列之配置在X軸方向錯開,只要在基板保持具34往X軸方向之移動中,一對讀頭單元60移動於Y軸方向(或在與一對讀頭單元60與標尺152之列對向之位置維持基板保持具34之Y位置),則能藉由第1群組之讀頭與第2群組之讀頭之至少一方所包含之三個讀頭,不論基板保持具34之X位置為何,均能測量基板保持具34之位置(X,Y,θ z)。
In the liquid crystal exposure apparatus of this embodiment, the Y position of the
此處,考量例如第1群組之讀頭(讀頭66a,66c,66e)不與任一標尺對向而成為無法測量後,再度對向於標尺152時使該等讀頭66a,66c,66e復原之(使測量再度開始之)情形。此情形下,係在再度開始第1群組之讀頭(讀頭66a,66c,66e)之測量前之時點,藉由第2群組之讀頭(讀頭66b,66d,66f)持續進行基板保持具34之位置(X,Y,θ z)測量、控制。因此,主控制裝置90係如圖22所示,一對讀頭單元60跨分別配置於+Y側、-Y側之相鄰之兩個標尺152,在第1群組之讀頭與第2群組之讀頭對向於相鄰之兩個標尺152之一方與另一方之時點,以前述第2實施形態詳述之方法,根據第2群組之讀頭(讀頭66b,66d,66f)之測量值算出基板保持具之位置(X,Y,θ z),並將此算出之基板保持具之位置(X,Y,θ z)代入
前述仿射轉換之式,藉此同時算出第1群組之讀頭(讀頭66a,66c,66e)之初始值並設定。藉此,能簡單地使第1群組之讀頭復原,再度開始此等讀頭對基板保持具34之位置測量、控制。
Here, considering, for example, that the reading heads of the first group (reading
根據以上說明之本第4實施形態之液晶曝光裝置,能發揮與前述第2實施形態之液晶曝光裝置相同之作用効果。 According to the liquid crystal exposure device of the fourth embodiment described above, the same functions and effects as the liquid crystal exposure device of the aforementioned second embodiment can be exerted.
《第4實施形態之變形例》 "Modifications of the fourth embodiment"
此變形例,係在第4實施形態之液晶曝光裝置中,作為位於+Y側之另一方之讀頭單元60,使用與一方之讀頭單元60相同構成(或在紙面上下方向成對稱之構成)之讀頭單元的情形。
In this modification, in the liquid crystal exposure apparatus of the fourth embodiment, the
此情形下,與上述同樣地,將八個讀頭分組成配置成相同Y軸方向之直線狀之各四個讀頭所屬之第1群組之讀頭與第2群組之讀頭。 In this case, similarly to the above, the eight heads are grouped into the heads of the first group and the heads of the second group to which the four heads each arranged in a straight line in the same Y-axis direction belong.
考量第1群組之讀頭不與任一標尺對向而成為無法測量後,再度對向於標尺152時使第1群組之讀頭復原,並再度開始該等讀頭之測量的情形。
Considering the situation where the reading heads of the first group are not aligned with any ruler and become unable to measure, the reading heads of the first group are restored when the reading heads of the first group are oriented to the
此情形下,在再度開始第1群組之讀頭之測量前之時點,係藉由第2群組之讀頭中之三個讀頭持續進行基板保持具34之位置(X,Y,θ z)之測量、控制。因此,主控制裝置90,雖與前述同樣地,係在一對讀頭單元60跨分別配置於+Y側、-Y側之相鄰兩個標尺152,而第1群組之讀頭與第2群組之讀頭對向於相鄰之兩個標尺152之一方與另一方的時點,算出第1群組之讀頭各自之測量值之初始值,但此情形下,無法同時算出第1群組之四個讀頭之所有初始值。其理由在於,只要回復測量之讀頭為三個(將X讀頭與Y讀頭加起來的數目),以與前述相同之流程設定了該等
三個讀頭之測量值之初始值時,藉由將該等初始值設為前述測量值C1,C2,C3等並解前述聯立方程式,由於基板保持具之位置(X,Y,θ)係唯一地決定,因此沒什麼特別的問題。然而,並無法認知到能將基板保持具之位置(X,Y,θ)唯一地決定之使用四個讀頭之測量值之、利用了仿射轉換之關係的聯立方程式。
In this case, the position of the substrate holder 34 (X, Y, θ) is continuously performed by three of the reading heads of the second group before the measurement of the reading heads of the first group is restarted. z) Measurement and control. Therefore, although the
因此,本變形例中,係將使復原之第1群組分組成分別包含另一讀頭之三個讀頭所屬之兩個群組,依各群組以與前述相同之方法,針對三個讀頭同時算出初始值並設定。在初始值之設定後,只要將任一群組之三個讀頭之測量值用於基板保持具34之位置控制即可。亦可將不用於位置控制之群組之讀頭對基板保持具34之位置測量,與基板保持具34之位置控制並行地執行。此外,亦能將使復原之第1群組之各讀頭之初始值以前述方法依序個別地算出。
Therefore, in this modified example, the first group to be restored is grouped into two groups to which the three read heads each including another read head belong, and each group uses the same method as described above for three groups. The reading head calculates and sets the initial value at the same time. After the initial value is set, it is enough to use the measured values of the three reading heads of any group for the position control of the
此外,以上說明之第1~第4實施形態之構成能適當變更。例如,上述第1實施形態之光罩編碼器系統48、基板編碼器系統50中,編碼器讀頭及標尺之配置亦可相反。亦即,例如用以求出光罩保持具40之位置資訊之X線性編碼器92x、Y線性編碼器92y,亦可為於光罩保持具40安裝編碼器讀頭,於編碼器基座43安裝標尺的構成。又,用以求出基板保持具34之位置資訊之X線性編碼器94x、Y線性編碼器94y,亦可於基板保持具34安裝編碼器讀頭,於Y滑動平台62安裝標尺。此情形下,安裝於基板保持具34之編碼器讀頭,例如可沿著X軸方向配置複數個,並可相互切換動作。又,亦可使設於基板保持具34之編碼器讀頭為可動,且設置測量該編碼器讀頭之位置資訊之感測器,並於編碼器基座43設置標尺。此情
形下,設於編碼器基座43之標尺為固定。同樣地,用以求出Y滑動平台62之位置資訊之X線性編碼器96x、Y線性編碼器96y,亦可於Y滑動平台62安裝標尺,於編碼器基座54(裝置本體18)安裝編碼器讀頭。此情形下,安裝於編碼器基座54之編碼器讀頭,例如可沿著Y軸方向配置複數個,並可相互切換動作。在於基板保持具34及編碼器基座54固定編碼器讀頭之情形,亦可使固定於Y滑動平台62之標尺共通化。
In addition, the configuration of the first to fourth embodiments described above can be changed as appropriate. For example, in the
又,雖說明了基板編碼器系統50中,於基板載台裝置20側固定有複數個延伸於X軸方向之標尺52,於裝置本體18(編碼器基座54)側固定有複數個延伸於Y軸方向之標尺56的情形,但並不限於此,亦可於基板載台裝置20側固定有複數個延伸於Y軸方向之標尺,於裝置本體18側固定有複數個延伸於X軸方向之標尺。此情形下,讀頭單元60,係在基板P之曝光動作等之基板保持具34之移動中被往X軸方向驅動。
In addition, although the
又,雖說明了光罩編碼器系統48中,例如三個標尺46於X軸方向分離配置,基板編碼器系統50中,例如兩個標尺52於Y軸方向分離配置,例如五個標尺56於X軸方向分離配置的情形,但標尺之數目並不限於此,可視例如光罩M、基板P之大小、或者移動行程適當變更。又,複數個標尺可不一定要分離配置,亦可使用例如較長之一個標尺(在上述實施形態之情形,例如為標尺46之約3倍長度之標尺、標尺52之約2倍長度之標尺、標尺56之約5倍長度之標尺)。又,亦可使用長度不同之複數個標尺,只要將在X軸方向或Y軸方向排列配置之複數個格子區域包含於各自之格子部,則構成格子部之標尺之數目,可為任意數目。
Furthermore, although it has been described that in the
又,Y滑動平台62、皮帶驅動裝置68,雖係設於裝置本體
18之上架台部18a之下面(參照圖4)的構成,但亦可設於下架台部18b或中架台部18c。
In addition, the
又,上述第1實施形態中,雖說明了於標尺46,52,56各自之表面獨立地形成有X標尺與Y標尺之情形,但並不限於此,亦可與前述第2~第4實施形態同樣地,使用形成有二維光柵之標尺。此情形下,編碼器讀頭亦能使用XY二維讀頭。又,在形成於基板保持具34上之標尺52內,雖X標尺53x與Y標尺53y係在X軸方向以同一長度形成,但亦可使此等長度彼此相異。且亦可將兩者在X軸方向相對錯開配置。又,雖說明了使用繞射干渉方式之編碼器系統之情形,但並不限於此,亦能使用所謂拾波(pick up)方式、磁方式等其他編碼器,亦能使用例如美國專利第6,639,686號說明書等所揭示之所謂掃描編碼器等。又,Y滑動平台62之位置資訊,亦可藉由編碼器系統以外之測量系統(例如光干渉儀系統)求出。
In addition, in the above-mentioned first embodiment, although the case where the X scale and the Y scale are independently formed on the respective surfaces of the
此外,上述第2~第4實施形態及其變形例(以下簡稱為第4實施形態)中,雖說明了至少設置四個讀頭之情形,但此種情形下,只要將在第1方向排列配置之複數個格子區域包含於格子部,則構成格子部之標尺152之數目可為任意。該複數個格子區域,亦可不需配置於基板保持具34之隔著基板P之Y軸方向之一側及另一側兩方,亦可僅配置於其中一方。不過,為了至少在基板P之曝光動作中持續控制基板保持具34之位置(X,Y,θ z),必須滿足以下之條件。
In addition, in the above-mentioned second to fourth embodiments and their modifications (hereinafter referred to as the fourth embodiment), although the case where at least four read heads are installed is described, in this case, it is only necessary to arrange them in the first direction. The plurality of grid regions arranged are included in the grid portion, and the number of
亦即,至少在四個讀頭中之一個讀頭之測量光束從複數個格子區域(例如前述二維光柵RG)脫離之期間,剩餘之至少三個讀頭之測量光束照射於複數個格子區域之至少一個,且藉由基板保持具34往X軸方向 (第1方向)移動,而在上述至少四個讀頭中測量光束從複數個格子區域脫離而切換上述一個讀頭。此情形下,至少四個讀頭,包含在X軸方向(第1方向)測量光束之位置(照射位置)彼此不同之兩個讀頭、以及在Y軸方向(第2方向)上測量光束之位置與前述兩個讀頭之至少一方不同且在X軸方向上測量光束之位置(照射位置)彼此不同之兩個讀頭,前述兩個讀頭,係在X軸方向中,以較複數個格子區域中相鄰之一對格子區域之間隔寬之間隔照射測量光束。 That is, during the period when the measuring beam of at least one of the four reading heads is separated from the plurality of grid areas (for example, the aforementioned two-dimensional grating RG), the measurement beams of the remaining at least three reading heads irradiate the plurality of grid areas At least one of them, and the direction of the X-axis by the substrate holder 34 (First direction) moving, and the measurement beam is separated from the plurality of grid areas among the at least four heads, and the one head is switched. In this case, at least four reading heads, including two reading heads that differ in the position (irradiation position) of the measuring beam in the X-axis direction (first direction), and one of the measuring beam in the Y-axis direction (second direction) Two read heads whose positions are different from at least one of the aforementioned two read heads and the positions of the measuring beam (irradiation position) in the X-axis direction are different from each other. The aforementioned two read heads are in the X-axis direction. The measurement beam is irradiated with a wide interval between a pair of adjacent grid areas in the grid area.
此外,亦可將排列於X軸方向之格子區域(例如二維光柵RG)之列在Y軸方向配置3列以上。例如,上述第4實施形態中,亦可取代-Y側之五個標尺152而採用如下構成:設置分別具有將該五個標尺152之各個於Y軸方向予以二等分之面積之10個格子區域(例如二維光柵RG)所構成之、在Y軸方向相鄰之兩個格子區域(例如二維光柵RG)之列,讀頭66e,66f能對向於一列之二維光柵RG,且讀頭66c,66d能對向於另一列之二維光柵RG。又,上述第4實施形態之變形例中,針對+Y側之五個標尺152亦可採用下述構成:設置由與上述相同之10個格子區域所構成之在Y軸方向相鄰之兩個格子區域(例如二維光柵RG)之列,一對讀頭能對向於一列之二維光柵RG,且剩餘之一對讀頭能對向於另一列之二維光柵RG。
In addition, three or more rows of grid regions (for example, two-dimensional grating RG) arranged in the X-axis direction may be arranged in the Y-axis direction. For example, in the above-mentioned fourth embodiment, instead of the five
此外,上述第2~第4實施形態中,在基板保持具34往X軸方向(第1方向)之移動中,以至少在四個讀頭相互間任何兩個讀頭之測量光束均不照射於任一二維光柵RG(從格子區域脫離)、亦即無法以讀頭測量之(非測量區間)不重疊之方式,設定標尺及讀頭之至少一方之位置或間隔、或者位置及間隔等是很重要的。
In addition, in the second to fourth embodiments described above, during the movement of the
此外,上述第2至第4實施形態中,雖係設定測量光束從一個標尺脫離而移至另一標尺之另一讀頭之初始值,但並不限於此,亦可取得用以使用另一讀頭控制基板保持具之移動之修正資訊,如另一讀頭之測量值之修正資訊等。雖用以使用另一讀頭控制基板保持具之移動之修正資訊當然包含初始值,但並不限於此,只要係能用以使該另一讀頭再度開始測量之資訊即可,亦可為從在測量再度開始後應測量之值偏置之偏置值等。 In addition, in the above-mentioned second to fourth embodiments, although the initial value of the other reading head that the measuring beam is separated from one scale and moved to the other scale is set, it is not limited to this, and it can also be obtained to use another The reading head controls the correction information of the movement of the substrate holder, such as the correction information of the measurement value of another reading head. Although the correction information used to control the movement of the substrate holder using another read head certainly includes an initial value, it is not limited to this, as long as it is information that can be used to make the other read head start measuring again, it may also be The offset value, etc. from the value that should be measured after the measurement is restarted.
此外,上述第2至第4實施形態中,亦可取代測量基板保持具34之位置資訊之各X讀頭66x,而使用以X軸方向及Z軸方向作為測量方向之編碼器讀頭(XZ讀頭),且亦可取代各Y讀頭66y,而使用以Y軸方向及Z軸方向作為測量方向之編碼器讀頭(YZ讀頭)。作為此等讀頭,能使用與例如美國專利第7,561,280號說明書所揭示之位移測量感測器讀頭相同構成之感測器讀頭。在此種情形下,主控制裝置90,亦可在前述讀頭之切換及接續處理時,使用切換前用於基板保持具34之位置控制之三個讀頭之測量值進行既定運算,藉此除了用以保證在XY平面內3自由度方向(X,Y,θ z)之基板保持具34之位置測量結果之連續性的接續處理以外,亦以與前述相同之方法,進行用以保證在剩餘之3自由度方向(Z,θ x,θ y)之基板保持具34之位置測量結果之連續性之接續處理。若代表性地以第2實施形態為例具體地說明,則主控制裝置90,只要將用以使用四個讀頭66a,66b,66c,66d中測量光束從一個二維光柵RG(格子區域)脫離而移至另一個二維光柵RG(格子區域)之一個讀頭來控制基板保持具34在剩餘之3自由度方向(Z,θ x,θ y)之移動之修正資訊,根據剩餘之三個讀頭之Z軸方向(第3方向)之測量資訊、或者使用該剩餘之三個讀頭測量
之基板保持具34在剩餘之3自由度方向(Z,θ x,θ y)之位置資訊來取得即可。
In addition, in the second to fourth embodiments described above, instead of each
又,若複數個標尺板152之高度與傾斜相互偏移,則會於前述座標系間產生偏移,因此會產生編碼器系統之測量誤差。因此,亦可亦修正因複數個標尺板152間之高度與傾斜之偏移所導致之編碼器系統之測量誤差。例如,如前所述,第2實施形態中,在讀頭之切換時,於設定切換後之讀頭之初始值之時點,會產生四個讀頭66a~66d全部同時對向於任一標尺152之第5狀態。因此,主控制裝置90,亦可藉由利用在此第5狀態之多餘讀頭之測量值,校正因複數個標尺板152間之高度與傾斜之偏移所導致之座標系間之偏移。
In addition, if the heights and inclinations of the plurality of
例如,能與前述偏置(ΔX,ΔY,Δθ z)之取得時同樣地,在第5狀態下,進行2組三個1組之讀頭對基板保持具34之位置(Z,θ x,θ y)之測量,求出藉由該測量而取得之測量值彼此之差、亦即偏置ΔZ,Δθ X,Δθ y,並將此偏置用於以至少兩個標尺之組合分別決定之座標系間在Z軸方向,θ x,θ y方向之偏移之校正,該至少兩個標尺係與用於讀頭切換前後之基板保持具34之位置資訊之測量及位置之控制之三個讀頭對向。
For example, in the same manner as when the aforementioned offset (ΔX, ΔY, Δθ z) is obtained, in the fifth state, the position (Z, θ x, θ y) is measured, the difference between the measured values obtained by the measurement, that is, the offset ΔZ, Δθ X, Δθ y, is calculated, and the offset is used to determine the difference by a combination of at least two scales Correction of the offset between the coordinate systems in the Z-axis direction and the θ x, θ y directions. The at least two scales are used for the measurement of the position information of the
此外,上述第1~第4實施形態中,雖係以Z傾斜位置測量系98及基板編碼器系統50構成基板位置測量系,但例如亦可取代X,Y讀頭而使用XZ,YZ讀頭,藉此僅以基板編碼器系統50構成基板位置測量系。
In addition, in the first to fourth embodiments described above, although the Z tilt
又,上述第1~第4實施形態中,亦可與基板編碼器系統50之一對讀頭單元60分開獨立地設置在X軸方向從讀頭單元60分離配置之至少一個讀頭。例如,亦可設置在X軸方向從投影光學系16分離配置、相
對檢測基板P之對準標記之標記檢測系(對準系)分別在±Y側設置與讀頭單元60相同之可動讀頭單元,在基板標記之檢測動作中使用配置於標記檢測系之±Y側之一對讀頭單元測量基板保持具34之位置資訊。此情形下,即使在標記檢測動作中,一對讀頭單元60中全部測量光束均從標尺152(或52)脫離,亦能持續基板編碼器系統50(其他的一對讀頭單元)對基板保持具34之位置資訊之測量,能提高標記檢測系之位置等、曝光裝置之設計自由度。此外,藉由將測量基板P在Z軸方向之位置資訊之基板位置測量系配置於標記檢測系近旁,而能亦在基板之Z位置之檢測動作中進行基板編碼器系統50對基板保持具34之位置資訊之測量。或者,亦可將基板位置測量系配置於投影光學系16近旁,而在基板之Z位置之檢測動作中以一對讀頭單元60測量基板保持具34之位置資訊。又,本實施形態中,在基板保持具34配置於從投影光學系16分離設定之基板交換位置後,一對讀頭單元60之全部讀頭之測量光束從標尺152(或52)脫離。因此,亦能設置與配置於基板交換位置之基板保持具34之複數個標尺152(或52)之至少一個對向的至少一個讀頭(可動讀頭或固定讀頭之任一者均可),而能在基板交換動作中亦進行基板編碼器系統50對基板保持具34之位置資訊之測量。此處,在基板保持具34到達基板交換位置前,換言之,在配置於基板交換位置之至少一個讀頭對向於標尺152(或52)前,一對讀頭單元60之全部讀頭之測量光束從標尺152(或52)脫離之情形,亦可於基板保持具34之移動路徑途中追加配置至少一個讀頭,而持續進行基板編碼器系統50對基板保持具34之位置資訊之測量。此外,在使用與一對讀頭單元60分開設置之至少一個讀頭之情形,亦可使用一對讀頭單元60之測量資訊進行前述之接
續處理。
In addition, in the first to fourth embodiments described above, at least one head that is separated from the
又,上述第1~第4實施形態中,亦可取代光罩編碼器系統48之各X讀頭而使用前述XZ讀頭,且亦可取代各Y讀頭而使用前述YZ讀頭。或者,上述第1~第4實施形態中,亦可將光罩編碼器系統,與基板編碼器系統50之基板保持具34之位置測量用編碼器同樣地,作成複數個讀頭可在Y軸方向相對標尺46移動之構成。又,亦可取代標尺46,使用形成有與前述標尺152相同之二維光柵RG之標尺。
In addition, in the first to fourth embodiments described above, the aforementioned XZ head may be used instead of each X head of the
同樣地,上述第1~第4實施形態中,亦可取代各X讀頭64x而使用前述XZ讀頭,且亦可取代各Y讀頭64y而使用前述YZ讀頭。此情形下,又,亦可取代標尺56,而使用形成有與前述標尺152相同之二維光柵RG之標尺。此情形下,一對XZ讀頭與一對YZ讀頭、以及此等讀頭可對向之編碼器系統,亦可測量複數個讀頭66x,66y之旋轉(θ z)與傾斜(θ x及θ y之至少一方)之至少一方之位置資訊。
Similarly, in the first to fourth embodiments described above, the aforementioned XZ head may be used instead of each
此外,在標尺46,52,56,152等雖係於表面形成有格子之(表面為格子面之)物,但例如亦可設置覆蓋格子之罩構件(玻璃或薄膜等),並將格子面設為標尺內部。
In addition, although the
此外,上述第1~第4實施形態中,雖說明各一對X讀頭64x及Y讀頭64y設於用以測量基板保持具34位置之讀頭且設於Y滑動平台62之情形,但各一對X讀頭64x及Y讀頭64y,亦可不透過Y滑動平台而設於用以測量基板保持具34位置之讀頭。
In addition, in the above-mentioned first to fourth embodiments, it is described that each pair of
此外,至此為止之說明中,雖說明了光罩編碼器系統、基板編碼器系統所分別具備之各讀頭在XY平面內之測量方向為X軸方向或Y 軸方向之情形,但並不限於此,例如在上述第2~第4實施形態之情形,亦可取代二維光柵RG而使用將在XY平面內與X軸方向及Y軸方向交叉且彼此正交之兩方向(為了說明方便而稱為α方向、β方向)作為週期方向之二維格子,且亦可與此對應地,使用以α方向(以及Z軸方向)或β方向(以及Z軸方向)作為各自之測量方向之讀頭來作為前述各讀頭。又,在前述第1實施形態中,亦可取代各X標尺、Y標尺而使用例如以α方向、β方向作為週期方向之一維格子,且與此對應地使用以α方向(以及Z軸方向)或β方向(以及Z軸方向)作為各自之測量方向之讀頭來作為前述之各讀頭。 In addition, in the description so far, it has been described that the measurement direction of each read head in the XY plane of the reticle encoder system and the substrate encoder system is the X axis direction or Y The direction of the axis is not limited to this. For example, in the case of the above-mentioned second to fourth embodiments, instead of the two-dimensional grating RG, it may be used to cross the X-axis direction and the Y-axis direction in the XY plane. The alternate two directions (referred to as the α direction and β direction for the convenience of explanation) are used as a two-dimensional grid in the periodic direction. Correspondingly, the α direction (and the Z axis direction) or the β direction (and the Z axis) Direction) as the reading heads of the respective measuring directions as the aforementioned reading heads. In addition, in the first embodiment described above, instead of each of the X scale and Y scale, for example, a one-dimensional grid with the α direction and the β direction as the periodic direction may be used, and the α direction (and the Z axis direction) may be used correspondingly. ) Or β-direction (and Z-axis direction) as the respective measuring direction of the reading heads as the aforementioned reading heads.
此外,上述第2~第4實施形態中,亦可以前述X標尺之列構成第1格子群,以前述Y標尺之列構成第2格子群,並與此對應地,將以能與X標尺之列對向之方式以既定間隔(較相鄰X標尺間-之間隔大之間隔)配置複數個X讀頭(或XZ讀頭),且將以能與Y標尺之列對向之方式以既定間隔(較相鄰Y標尺間之間隔大之間隔)配置複數個Y讀頭(或YZ讀頭)。 In addition, in the above-mentioned second to fourth embodiments, the rows of the aforementioned X scales may constitute the first grid group, and the rows of the aforementioned Y scales may constitute the second grid group. Correspondingly, the rows of the aforementioned X scales can be combined with the X scale. Aligning the rows with multiple X read heads (or XZ read heads) arranged at a predetermined interval (the interval larger than the interval between adjacent X scales), and will be arranged in a manner that can be opposite to the Y scale column. A plurality of Y reading heads (or YZ reading heads) are arranged in the interval (the interval larger than the interval between adjacent Y scales).
此外,上述第1~第4實施形態中,作為排列配置於X軸方向或Y軸方向之各標尺,當然亦可使用長度不同之複數個標尺。此情形下,在設置2列以上週期方向相同或正交之標尺之列之情形,亦可選擇能設定成標尺間之空間彼此不重疊之長度之標尺。亦即,構成一列標尺列之標尺間之空間之配置間隔可非為等間隔。又,例如,亦可相較於基板保持具34上之標尺列中靠X軸方向之兩端部分別配置之標尺(標尺列中配置於各端部之標尺)在X軸方向之長度,使配置於中央部之標尺之物理長度更長。
In addition, in the first to fourth embodiments described above, as the scales arranged in the X-axis direction or the Y-axis direction, it is of course also possible to use a plurality of scales with different lengths. In this case, when two or more rows of scales with the same or orthogonal periodic direction are arranged, a scale that can be set to a length that the space between the scales does not overlap each other can also be selected. That is, the arrangement interval of the space between the scales constituting a row of scales may not be equal intervals. Also, for example, the length in the X-axis direction of the scales (the scales arranged at each end of the scale row) arranged in the scale row on the
此外,上述第1~第4實施形態中,可動讀頭用編碼器,雖只要測量至少可動讀頭在移動方向(上述實施形態中為Y軸方向)之位置資訊即可,但可亦測量與移動方向不同之至少一個方向(X,Z,θ x,θ y,θ z之至少一個)之位置資訊。例如,亦測量測量方向為X軸方向之讀頭(X讀頭)在X軸方向之位置資訊,並以此X資訊與X讀頭之測量資訊求出X軸方向之位置資訊。不過,測量方向為Y軸方向之讀頭(Y讀頭),亦可不使用與測量方向正交之X軸方向之位置資訊。同樣地,X讀頭,亦可不使用與測量方向正交之Y軸方向之位置資訊。扼要言之,可測量與讀頭之測量方向不同之至少一個方向之位置資訊,並以此測量資訊與讀頭之測量資訊求出在測量方向之基板保持具34之位置資訊。又,例如可使用在X軸方向位置不同之2條測量光束測量可動讀頭在θ z方向之位置資訊(旋轉資訊),並使用此旋轉資訊,以X,Y讀頭之測量資訊求出X軸、Y軸方向之位置資訊。此情形下,將X讀頭與Y讀頭中之一方配置兩個,將另一方配置一個,以測量方向相同之兩個讀頭在與測量方向正交之方向上不成為同一位置之方式配置,藉此即能測量X,Y,θ z方向之位置資訊。另一個讀頭,可對與兩個讀頭不同之位置照射測量光束。再者,只要可動讀頭用編碼器之讀頭為XZ或YZ讀頭,則將例如XZ讀頭與YZ讀頭之一方之兩個、另一方之一個以不在同一直線上之方式配置,藉此不僅Z資訊,亦能測量θ x及θ y方向之位置資訊(傾斜資訊)。亦可以θ x及θ y方向之位置資訊之至少一方與X,Y讀頭之測量資訊求出X軸、Y軸方向之位置資訊。同樣地,即使係XZ或YZ讀頭,亦可測量在與Z軸方向不同之方向之可動讀頭之位置資訊,並以此測量資訊與讀頭測量資訊求出Z軸方向之位置資訊。此外,
只要測量可動讀頭位置資訊之編碼器之標尺為單一標尺(格子區域),則XY θ z與Z θ x θ y均能以三個讀頭測量,但在複數個標尺(格子區域)為分離配置之情形,只要將X,Y讀頭各配置兩個、或者將XZ、YZ讀頭各配置兩個,並將X軸方向之間隔設定成四個讀頭之非測量期間不重疊即可。此說明,雖係以格子區域與XY平面平行配置之標尺作為前提,但格子區域與YZ平面平行配置之標尺亦能同樣地適用。
In addition, in the first to fourth embodiments described above, the encoder for the movable read head only needs to measure at least the position information of the movable read head in the moving direction (the Y-axis direction in the above embodiment), but it can also measure and Position information in at least one direction (at least one of X, Z, θ x, θ y, θ z) with different moving directions. For example, the position information in the X-axis direction of the reading head (X reading head) whose measurement direction is the X-axis direction is also measured, and the position information in the X-axis direction is obtained from the X information and the measurement information of the X reading head. However, the reading head whose measurement direction is the Y-axis direction (Y reading head) may not use the position information in the X-axis direction orthogonal to the measurement direction. Similarly, the X-read head may not use the position information in the Y-axis direction orthogonal to the measurement direction. In short, the position information of at least one direction different from the measurement direction of the reading head can be measured, and the position information of the
又,上述第1~第4實施形態中,雖係使用編碼器作為測量可動讀頭位置資訊之測量裝置,但除了編碼器以外,亦可使用例如干渉儀等。此情形下,例如亦可於可動讀頭(或其保持部)設置反射面,並與Y軸方向平行地將測量光束照射於反射面。特別是可動讀頭僅移動於Y軸方向時不需加大反射面,亦可容易地進行用以減低空氣波動之干渉儀光束光路之局部空調。 In addition, in the first to fourth embodiments described above, although an encoder is used as a measuring device for measuring the position information of the movable head, in addition to the encoder, for example, an interference device may be used. In this case, for example, a reflective surface may be provided on the movable head (or its holding portion), and the measurement beam may be irradiated on the reflective surface in parallel to the Y-axis direction. Especially when the movable reading head only moves in the Y-axis direction, there is no need to enlarge the reflecting surface, and it is also easy to perform local air conditioning of the beam path of the interference instrument to reduce air fluctuations.
又,上述第1~第4實施形態中,雖係將對基板保持具之標尺照射測量光束之可動讀頭,於Y軸方向之投影系兩側各設置一個,但亦可各設置複數個可動讀頭。例如,只要以在Y軸方向上複數個可動讀頭之測量期間一部分重疊之方式配置相鄰之可動讀頭(測量光束),則即使基板保持具往Y軸方向移動,亦能以複數個可動讀頭持續位置測量。此情形下,必須在複數個可動讀頭間進行接續處理。因此,亦可使用僅配置於投影系之±Y側中之一方且對至少一個標尺照射測量光束之複數個讀頭之測量資訊,取得與測量光束照射到標尺之另一讀頭相關的修正資訊,亦可使用不僅在±Y側中之一方亦配置於另一側之至少一個讀頭之測量資訊。扼要言之,只要使用分別配置於±Y側之複數個讀頭中測量光束照射於標尺之至少 三個讀頭之測量資訊即可。 In addition, in the first to fourth embodiments described above, although the movable head that irradiates the measuring beam on the scale of the substrate holder is provided on each side of the projection system in the Y-axis direction, a plurality of movable heads may be provided on each side. Reading head. For example, as long as the adjacent movable reading heads (measurement beams) are arranged in such a way that the measurement period of a plurality of movable reading heads partially overlaps in the Y-axis direction, even if the substrate holder moves in the Y-axis direction, a plurality of movable reading heads can be moved in the Y-axis direction. Continuous position measurement of the reading head. In this case, it is necessary to perform connection processing between a plurality of movable reading heads. Therefore, it is also possible to use the measurement information of a plurality of reading heads arranged only on one of the ±Y sides of the projection system and irradiating the measurement beam to at least one scale to obtain correction information related to the other reading head irradiating the measurement beam to the scale , It is also possible to use the measurement information of at least one read head not only on the ±Y side but also on the other side. In short, as long as the measuring beams of the multiple reading heads arranged on the ±Y side are used to irradiate at least the scale The measurement information of three reading heads is enough.
又,上述第1~第4實施形態之基板編碼器系統50中,雖能在掃描曝光中基板P移動之掃描方向(X軸方向)將複數個標尺(格子區域)彼此分離配置,且能使複數個讀頭移動於基板P之步進方向(Y軸方向),但亦可與此相反地,在步進方向(Y軸方向)將複數個標尺彼此分離配置,且將複數個讀頭移動於掃描方向(X軸方向)。
In addition, in the
又,上述第1~第4實施形態中,光罩編碼器系統48及基板編碼器系統50之讀頭,不需具有將來自光源之光束照射於標尺之光學系之全部部分,亦可僅具有光學系一部分、例如射出部。
In addition, in the first to fourth embodiments described above, the read heads of the
又,上述第2~第4實施形態中,一對讀頭單元60之讀頭不限於圖17之配置(X讀頭及Y讀頭分別配置於±Y側且於±Y側之一方與另一方在X軸方向之X,Y讀頭之配置為相反),例如亦可X讀頭及Y讀頭分別配置於±Y側,且在±Y側之一方與另一方於X軸方向之X,Y讀頭之配置為相同。不過,若兩個Y讀頭之X位置為相同,則在兩個X讀頭中之一方之測量中斷時即無法測量θ z資訊,因此較佳為使兩個Y讀頭之X位置相異。
In addition, in the second to fourth embodiments described above, the heads of the pair of
又,上述第1~第4實施形態中,在將從編碼器系統之讀頭照射測量光束之標尺(標尺構件、格子部)設於投影光學系16側時,並不限於支承投影光學系16之裝置本體18(框架構件)之一部分,亦可設於投影光學系16之鏡筒部分。
In addition, in the first to fourth embodiments described above, when the scale (scale member, grid portion) that irradiates the measurement beam from the reading head of the encoder system is provided on the side of the projection
又,上述第1~第4實施形態中,雖說明了掃描曝光時之光罩M及基板P之移動方向(掃描方向)為X軸方向之情形,但亦可將掃描
方向設為Y軸方向。此情形下,係將光罩載台之長行程方向設定成繞Z軸旋轉90度後之方向,投影光學系16之方向亦需繞Z軸旋轉90度等。
In addition, in the first to fourth embodiments described above, the case where the movement direction (scanning direction) of the mask M and the substrate P during scanning exposure is the X-axis direction has been described, but the scanning
The direction is set to the Y-axis direction. In this case, the long stroke direction of the mask stage is set to the direction after rotating 90 degrees around the Z axis, and the direction of the projection
此外,上述第1~第4實施形態中,在基板保持具34上,將在X軸方向隔著既定間隔之間隙且相連配置有複數個標尺之標尺群(標尺列),於Y軸方向彼此分離之不同位置(例如相對投影光學系16在一側(+Y側)之位置與另一側(-Y側)之位置)配置複數列的情形,亦可將此複數個標尺群(複數個標尺列),構成為能根據基板上之照射配置(照射圖)區分使用。例如,只要使作為複數個標尺列整體之長度在標尺列間彼此相異,即能對應不同之照射圖,於擷取4面之情形與擷取6面之情形等,亦能對應形成於基板上之照射區域之數目變化。且只要如此配置,且使各標尺列之間隙之位置在X軸方向設在彼此不同之位置,由於分別對應於複數個標尺列之讀頭不會同時位在測量範圍外,因此能減少相接續處理中成為不定值之感測器數目,高精度地進行接續處理。
In addition, in the first to fourth embodiments described above, on the
又,亦可在基板保持具34上,在X軸方向上複數個標尺相隔既定間隔之間隙且相連配置之標尺群(標尺列)中將一個標尺(X軸測量用之圖案)之X軸方向長度設成能連續地測定一照射區域之長度(在一邊使基板保持具上之基板移動於X軸方向一邊進行掃描曝光時,一邊被照射元件圖案而形成於基板上之長度)量的長度。如此,由於在一照射區域之掃描曝光中,可不進行讀頭對複數標尺之接續控制,因此能使掃描曝光中之基板P(基板保持具)之位置測量(位置控制)容易。
Also, on the
又,上述第1~第4實施形態中,基板編碼器系統,為了取得基板載台裝置20移動至與基板裝載器之基板交換位置之期間之位置資
訊,亦可於基板載台裝置20或另一載台裝置設置基板交換用之標尺,使用朝下之讀頭(X讀頭66x等)來取得基板載台裝置20之位置資訊。或者,亦可藉由於基板載台裝置20或另一載台裝置設置基板交換用之讀頭,並測量標尺56或基板交換用之標尺來取得基板載台裝置20之位置資訊。
In addition, in the first to fourth embodiments described above, the substrate encoder system is used to obtain position data during the period when the
又,各實施形態之光罩編碼器系統,為了取得光罩載台裝置14移動至與光罩裝載器之光罩交換位置之期間之位置資訊,亦可於光罩載台裝置14或另一載台裝置設置光罩交換用之標尺,並使用讀頭單元44來取得光罩載台裝置14之位置資訊。
In addition, in the mask encoder system of each embodiment, in order to obtain the position information during the period when the
又,亦可與編碼器系統分開設置另一位置測量系(例如載台上之標記與觀察其之觀察系)來進行載台之交換位置控制(管理)。 In addition, another position measurement system (such as a mark on the carrier and an observation system for observing it) can also be set separately from the encoder system to perform the exchange position control (management) of the carrier.
又,上述各實施形態中,雖係構成為於基板保持具34上設置標尺,但亦可將標尺以曝光處理直接形成於基板P。例如亦可形成於照射區域間之條狀線上。如此,能測量形成於基板上之標尺,並根據其位置測量結果求出基板上之各照射區域之非線形成分誤差,且能根據其誤差使曝光時之重疊精度提升。
In addition, in each of the above-mentioned embodiments, although the scale is provided on the
此外,基板載台裝置20,只要能至少能將基板P沿著水平面以長行程驅動即可,視情形不同亦可不能進行6自由度方向之微幅定位。對於此種二維載台裝置,亦能非常合適地適用上述第1~第4實施形態之基板編碼器系統。
In addition, the
又,照明光可以是ArF準分子雷射光(波長193nm)、KrF準分子雷射光(波長248nm)等之紫外光、F2雷射光(波長157nm)等之真空紫外光。此外,作為照明光,亦可使用例如DFB半導體雷射或光纖雷射 發出之紅外線帶發出之紅外線帶、或可見光帶之單一波長之雷射光,以例如摻雜有鉺(或鉺及鐿兩者)之光纖放大器加以增幅,使用非線性光學結晶加以波長轉換為紫外光之諧波。又,亦可使用固體雷射(波長:355nm、266nm)等。 In addition, the illumination light may be ultraviolet light such as ArF excimer laser light (wavelength 193nm), KrF excimer laser light (wavelength 248nm), and vacuum ultraviolet light such as F2 laser light (wavelength 157nm). In addition, as the illuminating light, for example, DFB semiconductor laser or fiber laser can also be used The emitted infrared band The infrared band or the single-wavelength laser light of the visible light band is amplified by, for example, a fiber amplifier doped with erbium (or both erbium and ytterbium), and a nonlinear optical crystal is used to convert the wavelength into ultraviolet light.之Harmonics. In addition, a solid laser (wavelength: 355nm, 266nm) or the like can also be used.
又,雖針對投影光學系16為具備複數支光學系之多透鏡方式之投影光學系的情形做了說明,但投影光學系之支數不限於此,只要是1支以上即可。此外,不限於多透鏡方式之投影光學系,亦可以是使用歐夫納反射鏡之投影光學系等。又,投影光學系16可以是放大系、或縮小系。
In addition, although the case where the projection
又,曝光裝置之用途不限於將液晶顯示元件圖案轉印至方型玻璃板片之液晶用曝光裝置,亦能廣泛的適用於例如有機EL(Electro-Luminescence)面板製造用之曝光裝置、半導體製造用之曝光裝置、用以製造薄膜磁頭、微機器及DNA晶片等之曝光裝置。此外,不僅僅是半導體元件等之微元件,為製造光曝光裝置、EUV曝光裝置、X線曝光裝置及電子束曝光裝置等所使用之光罩或標線片,而將電路圖案轉印至玻璃基板或矽晶圓等曝光裝置,亦能適用。 In addition, the use of the exposure device is not limited to the exposure device for liquid crystal that transfers the pattern of the liquid crystal display element to the square glass plate, but can also be widely applied to, for example, exposure devices for the manufacture of organic EL (Electro-Luminescence) panels and semiconductor manufacturing. Exposure equipment used, exposure equipment used to manufacture thin-film magnetic heads, micromachines and DNA chips. In addition, not only micro-components such as semiconductor components, but also for the manufacture of photomasks or reticles used in photoexposure devices, EUV exposure devices, X-ray exposure devices, and electron beam exposure devices, and transfer circuit patterns to glass Exposure devices such as substrates or silicon wafers can also be applied.
又,作為曝光對象之物體不限於玻璃板,亦可以是例如晶圓、陶瓷基板、薄膜構件、或光罩母板(空白光罩)等其他物體。此外,曝光對象物為平面顯示器用基板之場合,該基板之厚度無特限定,亦包含例如薄膜狀(具可撓性之片狀構件)者。又,本實施形態之曝光裝置,在一邊長度、或對角長500mm以上之基板為曝光對象物時尤其有效。 In addition, the object to be exposed is not limited to a glass plate, and may be other objects such as a wafer, a ceramic substrate, a thin film member, or a mask master (blank mask). In addition, when the exposure target is a substrate for a flat-panel display, the thickness of the substrate is not particularly limited, and includes, for example, a film-like (flexible sheet-like member). Moreover, the exposure apparatus of this embodiment is especially effective when a board|substrate with a side length or a diagonal length of 500 mm or more is an exposure object.
液晶顯示元件(或半導體元件)等之電子元件,係經由進行元件之功能性能設計的步驟、依據此設計步驟製作光罩(或標線片)的步 驟、製作玻璃基板(或晶圓)的步驟、以上述各實施形態之曝光裝置及其曝光方法將光罩(標線片)之圖案轉印至玻璃基板的微影步驟、對曝光後之玻璃基板進行顯影的顯影步驟、將殘存抗蝕劑部分以外之部分之露出構件以蝕刻加以去除的蝕刻步驟、將蝕刻後不要之抗蝕劑去除的抗蝕劑除去步驟、以及元件組裝步驟、檢査步驟等而製造出。此場合,由於於微影步驟使用上述實施形態之曝光裝置實施前述曝光方法,於玻璃基板上形成元件圖案,因此能以良好之生產性製造高積體度之元件。 Electronic components such as liquid crystal display components (or semiconductor components) are through the steps of designing the functional performance of the components, and the steps of making a mask (or reticle) according to this design step. Step, the step of making a glass substrate (or wafer), the photolithography step of transferring the pattern of the photomask (reticle) to the glass substrate using the exposure device and the exposure method of the above-mentioned embodiments, and the photolithography step of the exposed glass The development step of developing the substrate, the etching step of removing the exposed members except the remaining resist portion by etching, the resist removal step of removing the unnecessary resist after etching, the component assembly step, and the inspection step And so on. In this case, since the exposure device of the above-mentioned embodiment is used in the lithography step to implement the aforementioned exposure method to form a device pattern on the glass substrate, a high-integrity device can be manufactured with good productivity.
此外,援用與上述實施形態引用之曝光裝置等相關之所有美國專利申請公開說明書及美國專利說明書之揭示作為本說明書記載之一部分。 In addition, the disclosures of all U.S. patent application publications and U.S. patent specifications related to the exposure apparatus cited in the above-mentioned embodiments are cited as part of the description of this specification.
如以上之說明,本發明之曝光裝置及曝光方法,適於在微影製程中對物體照射照明光以將之曝光。又,本發明之平面顯示器製造方法,適於平面顯示器之生產。 As explained above, the exposure device and the exposure method of the present invention are suitable for irradiating an object with illumination light in the lithography process to expose it. In addition, the method for manufacturing a flat panel display of the present invention is suitable for the production of flat panel displays.
16‧‧‧投影光學系 16‧‧‧Projection Optics
20‧‧‧基板載台裝置 20‧‧‧Substrate stage device
34‧‧‧基板保持具 34‧‧‧Substrate holder
50‧‧‧基板編碼器系統 50‧‧‧Substrate encoder system
60‧‧‧編碼器讀頭單元 60‧‧‧Encoder reading head unit
62‧‧‧Y滑動平台 62‧‧‧Y sliding platform
66a,66b,66c,66d‧‧‧讀頭 66a,66b,66c,66d‧‧‧reading head
66x‧‧‧X讀頭 66x‧‧‧X reading head
66y‧‧‧Y讀頭 66y‧‧‧Y reading head
152‧‧‧標尺 152‧‧‧Ruler
P‧‧‧基板 P‧‧‧Substrate
RG‧‧‧二維光柵 RG‧‧‧Two-dimensional grating
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US20200363730A1 (en) | 2020-11-19 |
HK1248833A1 (en) | 2018-10-19 |
WO2017057539A1 (en) | 2017-04-06 |
CN108139681A (en) | 2018-06-08 |
TW201714026A (en) | 2017-04-16 |
CN111812949A (en) | 2020-10-23 |
CN113641083A (en) | 2021-11-12 |
JPWO2017057539A1 (en) | 2018-07-19 |
CN108139681B (en) | 2021-09-14 |
KR20180059810A (en) | 2018-06-05 |
JP6855009B2 (en) | 2021-04-07 |
US20180284619A1 (en) | 2018-10-04 |
TW202131112A (en) | 2021-08-16 |
JP2021103316A (en) | 2021-07-15 |
JP7140219B2 (en) | 2022-09-21 |
US10732510B2 (en) | 2020-08-04 |
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