TWI726617B - Device for cleaning wafer - Google Patents

Device for cleaning wafer Download PDF

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TWI726617B
TWI726617B TW109104542A TW109104542A TWI726617B TW I726617 B TWI726617 B TW I726617B TW 109104542 A TW109104542 A TW 109104542A TW 109104542 A TW109104542 A TW 109104542A TW I726617 B TWI726617 B TW I726617B
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unit
scrubbing
wafer
cleaning
dehydration
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TW109104542A
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TW202130426A (en
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尹影
舒福璋
李婷
史霄
賈若雨
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大陸商北京爍科精微電子裝備有限公司
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Abstract

An device for cleaning a wafer comprising at least one washing unit, at least two brushing units, at least one drying unit and at least one robot arm, which are included in a frame. The at least one washing unit, the at least two brushing units, and the at least one drying unit are configured to correspond to the at least one robot arm when the device is in operation. The at least one washing unit and the at least two brushing units are configured to vertically receive the wafer and the at least one drying unit is configured to horizontally receive and fix the wafer.

Description

用於清洗晶圓的裝置Device for cleaning wafer

本發明涉及晶圓潔淨領域,尤其涉及一種晶圓清洗裝置。 The invention relates to the field of wafer cleaning, in particular to a wafer cleaning device.

晶圓在經過化學機械研磨化或化學機械拋光(Chemical Mechanical Planarization/Polish,CMP)程序之後,需要對晶圓進行清洗,以去除拋光程序中帶來的所有污染物。習知的晶圓清洗裝置常用的清洗技術有兩種:第一種方案:在沖洗、刷洗、脫水三種模組中,晶圓均水平放置。這樣放置可以保證最佳的脫水效率,但是此方案由於在清洗環節晶圓水平放置,顆粒或者殘留拋光液不能及時排出,致使晶圓清洗效果不佳。第二種方案:在沖洗、刷洗、脫水三種模組中,晶圓均垂直放置。這種方案優點是:沖洗時晶圓垂直放置,沖洗效果最佳;但是,在脫水環節,由於重力作用,水分在晶圓上分佈不均,致使晶圓上存在浮水印殘留。因此,習知的晶圓清洗裝置存在清洗效果不佳的缺陷。 After the wafer has undergone a chemical mechanical polishing or chemical mechanical polishing (Chemical Mechanical Planarization/Polish, CMP) process, the wafer needs to be cleaned to remove all contaminants brought by the polishing process. There are two cleaning techniques commonly used in conventional wafer cleaning devices: The first solution: in the three modules of washing, scrubbing, and dehydration, the wafers are placed horizontally. This placement can ensure the best dehydration efficiency. However, in this solution, because the wafers are placed horizontally during the cleaning process, particles or residual polishing liquid cannot be discharged in time, resulting in poor wafer cleaning effects. The second solution: In the three modules of washing, scrubbing, and dehydration, the wafers are placed vertically. The advantage of this scheme is that the wafer is placed vertically during washing, and the washing effect is the best; however, in the dehydration process, due to gravity, moisture is unevenly distributed on the wafer, resulting in the presence of watermark residues on the wafer. Therefore, the conventional wafer cleaning device has the disadvantage of poor cleaning effect.

緣是,為解決上述問題,本發明的目的之一在於提供一種用於清洗一晶圓的裝置,其包括設置於一框架中之至少一個沖洗單元、至少兩個刷洗單元、至少一個脫水單元及至少一個機械手臂,該沖洗單元、 該刷洗單元及該脫水單元經配置以與機械手臂於操作時對應設置,該沖洗單元上設置有放置晶圓用的清洗旋轉輪,該清洗旋轉輪經配置以垂直承收該晶圓,該刷洗單元上設置有放置晶圓用的刷洗旋轉輪,該刷洗旋轉輪經配置以垂直承收該晶圓,該脫水單元經構形以水平固持該晶圓。 The reason is that in order to solve the above problems, one of the objectives of the present invention is to provide a device for cleaning a wafer, which includes at least one washing unit, at least two scrubbing units, at least one dehydration unit and At least one robotic arm, the flushing unit, The scrubbing unit and the dehydration unit are configured to correspond to the robot arm during operation. The cleaning unit is provided with a cleaning rotating wheel for placing wafers. The cleaning rotating wheel is configured to receive the wafer vertically. The unit is provided with a scrubbing rotating wheel for placing wafers, the scrubbing rotating wheel is configured to receive the wafer vertically, and the dehydration unit is configured to hold the wafer horizontally.

4:機械手臂 4: Robotic arm

10:沖洗單元 10: flushing unit

20:刷洗單元 20: scrubbing unit

30:脫水單元 30: Dehydration unit

40:隔牆 40: Partition wall

45:開口 45: opening

100:框架 100: frame

101:清洗旋轉輪 101: Cleaning the rotating wheel

101a:清洗主動輪 101a: Cleaning the driving wheel

101b:清洗從動輪 101b: Clean the driven wheel

102:清洗容納箱 102: Cleaning the containment box

103:兆聲裝置 103: Megasound device

201:刷洗容納箱 201: Scrub the containment box

202:刷洗頭 202: Brush your hair

203:刷洗旋轉輪 203: Brush the rotating wheel

203a:刷洗主動輪 203a: Scrub driving wheel

203b:刷洗從動輪 203b: Scrub the driven wheel

204:刷洗噴嘴 204: Brush nozzle

301:脫水容納箱 301: Dehydration container

302:升降臺 302: Lifting table

303:固定爪 303: fixed claw

304:噴水噴嘴 304: Water spray nozzle

305:固定塊 305: fixed block

306:旋轉軸 306: Rotation axis

307:驅動馬達 307: drive motor

圖1為顯示本發明一實施例提供之的晶圓清洗裝置中之沖洗單元、刷洗單元及脫水單元之示意圖。 FIG. 1 is a schematic diagram showing a washing unit, a scrubbing unit, and a dehydration unit in a wafer cleaning apparatus provided by an embodiment of the present invention.

圖2為本發明一實施例提供的沖洗單元結構示意圖。 Fig. 2 is a schematic structural diagram of a washing unit provided by an embodiment of the present invention.

圖3為本發明一實施例提供的刷洗單元結構示意圖。 Fig. 3 is a schematic structural diagram of a scrubbing unit provided by an embodiment of the present invention.

圖4為本發明一實施例提供的脫水單元結構示意圖。 Fig. 4 is a schematic structural diagram of a dehydration unit provided by an embodiment of the present invention.

圖5為本發明一實施例提供的機械手臂位置示意圖。 Fig. 5 is a schematic diagram of the position of a robotic arm provided by an embodiment of the present invention.

圖6為本發明一實施例提供的晶圓清洗裝置的立體示意圖。 FIG. 6 is a three-dimensional schematic diagram of a wafer cleaning apparatus provided by an embodiment of the present invention.

請參考圖1及圖6,其為本發明一實施例提供的晶圓清洗裝置的立體示意圖,該裝置包括設置於一框架100中之一個沖洗單元10、兩個刷洗單元20、一個脫水單元30及一個機械手臂4,該沖洗單元10、該刷洗單元20及該脫水單元30經配置以與機械手臂4於操作時對應設置,該沖洗單元上設置有放置晶圓用的清洗旋轉輪101,該清洗旋轉輪101經配置以垂直承收該晶圓,該刷洗單元上設置有放置晶圓用的刷洗旋轉輪203,該刷洗旋轉輪203經配置以垂直承收該晶圓,該脫水單元經構形以水平固持該晶圓。 Please refer to FIGS. 1 and 6, which are perspective schematic diagrams of a wafer cleaning apparatus provided by an embodiment of the present invention. The apparatus includes a washing unit 10, two scrubbing units 20, and a dehydration unit 30 arranged in a frame 100. And a robot arm 4, the washing unit 10, the scrubbing unit 20, and the dehydration unit 30 are configured to correspond to the robot arm 4 during operation. The washing unit is provided with a washing rotating wheel 101 for placing wafers. The cleaning rotating wheel 101 is configured to receive the wafer vertically, the scrubbing unit is provided with a scrubbing rotating wheel 203 for placing the wafer, the scrubbing rotating wheel 203 is configured to receive the wafer vertically, and the dehydration unit is configured The shape holds the wafer horizontally.

該沖洗單元10、該刷洗單元20係水平設置,且該裝置進一步包括一隔板40,其中該沖洗單元10以及該刷洗單元20設置於該隔板40之一側,該脫水單元30設置於該隔板40之另一側,該隔板40包含一窗口45於其中供機械手臂4傳遞該晶圓。 The flushing unit 10 and the scrubbing unit 20 are arranged horizontally, and the device further includes a partition 40, wherein the flushing unit 10 and the scrubbing unit 20 are arranged on one side of the partition 40, and the dehydration unit 30 is arranged on the On the other side of the partition 40, the partition 40 includes a window 45 in which the robot arm 4 can transfer the wafer.

在設置有該沖洗單元10以及該刷洗單元20之該隔板40之該側的上方設置有第一過濾器110,且在設置有該脫水單元30之該隔板40之該另一側上方設置有第二過濾器120。由於裝置使用中空氣流向會在清洗區域出現紊流,導致沖洗區顆粒物分佈雜亂且清洗和刷洗槽中會同時使用酸性和鹼性化學液體,兩者的揮發物會在清洗區中產生化學反應,產生新的顆粒物。這些因素都會導致最終的清洗效果變差,該隔板40以及該第一過濾器110以及該第二過濾器120的設置有助於改善清洗區顆粒物分佈情況,使顆粒物從脫水區、刷洗區、沖洗區依次減少,從而改善晶圓清洗效果。 A first filter 110 is provided above the side of the partition 40 where the washing unit 10 and the scrubbing unit 20 are provided, and a first filter 110 is provided above the other side of the partition 40 where the dehydration unit 30 is provided There is a second filter 120. Due to the turbulent flow of the air flow in the cleaning area during the use of the device, the particle distribution in the cleaning area is disordered and both acid and alkaline chemical liquids are used in the cleaning and scrubbing tanks. The volatiles of the two will produce chemical reactions in the cleaning area. Generate new particulate matter. These factors will cause the final cleaning effect to deteriorate. The arrangement of the partition 40 and the first filter 110 and the second filter 120 helps to improve the distribution of particulate matter in the cleaning area, so that the particulate matter can be removed from the dehydration zone, the scrubbing zone, and the scrubbing zone. The rinsing area is sequentially reduced, thereby improving the wafer cleaning effect.

所述沖洗單元上設置有放置晶圓用的清洗旋轉輪101,並且該清洗旋轉輪101使晶圓垂直設置;所述刷洗單元上設置有放置晶圓用的刷洗旋轉輪203,並且該刷洗旋轉輪203使晶圓垂直設置;所述脫水單元上設置有放置晶圓用的固定塊305和固定爪303,固定塊305和固定爪303安裝在升降臺302上,固定塊305和固定爪303抓緊晶圓,並且使晶圓水平設置。 The washing unit is provided with a washing rotating wheel 101 for placing wafers, and the washing rotating wheel 101 allows the wafers to be vertically arranged; the washing unit is provided with a washing rotating wheel 203 for placing wafers, and the washing rotates The wheel 203 makes the wafers be vertically arranged; the dehydration unit is provided with a fixed block 305 and a fixed claw 303 for placing the wafer, the fixed block 305 and the fixed claw 303 are installed on the lifting platform 302, and the fixed block 305 and the fixed claw 303 grasp Wafer, and set the wafer horizontally.

圖2是沖洗單元結構示意圖,沖洗單元包括有清洗容 納箱102、兆聲裝置103及清洗旋轉輪101;兆聲裝置103設置在清洗容納箱102的底部;所述清洗旋轉輪101設置在清洗容納箱102的中部,其包括清洗主動輪101a及清洗從動輪101b,清洗主動輪101a提供旋轉動力,清洗從動輪101b供垂直支撐、監測轉速並回饋。兆聲裝置103由高頻(850kHz)振效應並結合化學清洗劑的化學反應對晶圓進行清洗。在清洗時,由換能器發出波長為1μm頻率為0.8兆赫的高能聲波。溶液分子在這種聲波的推動下作加速運動,最大瞬時速度可達到30cm/s。因此,不會形成超聲波清洗產生的氣泡,而以高速的流體波連續衝擊晶片表面,使晶圓表面附著的污染物的細小微粒被強制除去並進入到清洗液中。兆聲波清洗拋光片可去掉晶片表面上小於0.2μm的粒子。 Figure 2 is a schematic diagram of the structure of the washing unit, the washing unit includes a washing capacity The receiving box 102, the megasound device 103, and the cleaning rotating wheel 101; the megasound device 103 is arranged at the bottom of the cleaning containing box 102; the cleaning rotating wheel 101 is arranged at the middle of the cleaning containing box 102, which includes the cleaning driving wheel 101a and the cleaning rotating wheel 101a. The driven wheel 101b, the cleaning driving wheel 101a provides rotation power, and the cleaning driven wheel 101b provides vertical support, monitors the rotation speed and feeds back. The megasonic device 103 cleans the wafer by the high frequency (850kHz) vibration effect combined with the chemical reaction of the chemical cleaning agent. During cleaning, the transducer emits high-energy sound waves with a wavelength of 1 μm and a frequency of 0.8 MHz. The solution molecules are accelerated by this sound wave, and the maximum instantaneous speed can reach 30cm/s. Therefore, the bubbles generated by ultrasonic cleaning are not formed, and high-speed fluid waves continuously impact the wafer surface, so that the fine particles of contaminants attached to the wafer surface are forcibly removed and enter the cleaning solution. Megasonic cleaning and polishing wafers can remove particles smaller than 0.2μm on the wafer surface.

圖3是刷洗單元結構示意圖,刷洗單元包括刷洗容納箱201、刷洗頭202、刷洗噴嘴204及刷洗旋轉輪203;刷洗頭202水平設置在刷洗單元的中部,刷洗噴嘴204與刷洗頭202平行設置在刷洗單元上部的側壁上;所述刷洗旋轉輪203設置在刷洗頭202的下部,其包括刷洗主動輪203a及刷洗從動輪203b,刷洗主動輪203a提供旋轉動力,刷洗從動輪203b供垂直支撐、監測轉速並回饋。 Figure 3 is a schematic diagram of the structure of the scrubbing unit. The scrubbing unit includes a scrub accommodating box 201, a scrub head 202, a scrub nozzle 204, and a scrub rotation wheel 203; the scrub head 202 is horizontally arranged in the middle of the scrub unit, and the scrub nozzle 204 and the scrub head 202 are arranged in parallel On the side wall of the upper part of the scrubbing unit; the scrubbing rotating wheel 203 is arranged at the lower part of the scrubbing head 202, which includes a scrubbing driving wheel 203a and a scrubbing driven wheel 203b. The scrubbing driving wheel 203a provides rotation power, and the scrubbing driven wheel 203b provides vertical support and monitoring. Speed and feedback.

圖4是脫水單元結構示意圖,脫水單元包括有脫水容納箱301、升降臺302、固定塊305、固定爪303、噴水噴嘴304及旋轉軸306;旋轉軸306上設置有升降臺302,旋轉軸306由驅動馬達307驅動旋轉,固定爪303及固定塊305設置在升降臺302上;升降臺 302設置在脫水容納箱301的中部,噴水噴嘴304設置在脫水容納箱301的側壁上。 Figure 4 is a schematic diagram of the structure of the dehydration unit. The dehydration unit includes a dehydration containing box 301, a lifting platform 302, a fixed block 305, a fixed claw 303, a water spray nozzle 304, and a rotating shaft 306; Driven by the driving motor 307 to rotate, the fixed claw 303 and the fixed block 305 are arranged on the lifting platform 302; the lifting platform 302 is arranged in the middle of the dehydration containing box 301, and the water spray nozzle 304 is arranged on the side wall of the dehydration containing box 301.

圖5是機械手臂位置示意圖,機械手臂設置在沖洗單元、刷洗單元的上部,其垂直方向夾持晶圓在沖洗單元及刷洗單元上方做水平橫向運動;末端刷洗單元上部的機械手臂4可水平旋轉,使晶圓水平放置在脫水單元上的升降臺302。 Figure 5 is a schematic diagram of the position of the robot arm. The robot arm is set on the upper part of the washing unit and the scrubbing unit. It clamps the wafer in the vertical direction to move horizontally and horizontally above the washing unit and the scrubbing unit; the robot arm 4 on the upper end of the scrubbing unit can rotate horizontally , The wafer is placed horizontally on the lifting platform 302 on the dehydration unit.

下面結合本實施例詳細說明晶圓清洗的操作情況。在本實施例中,沖洗單元的數量為一個,刷洗單元的數量為兩個,脫水單元的數量為一個。晶圓清洗的操作步驟如下:首先,將晶圓沿垂直方向放入清洗旋轉輪101中,清洗旋轉輪101的端部連接有電機,其為清洗旋轉輪101提供旋轉動力;在清洗容納箱102內注入清洗液,位於清洗容納箱102的底部兆聲裝置103開始工作,利用超頻震動使污染物與晶圓脫離,並由清洗液將污染物帶走。 The operation of wafer cleaning will be described in detail below in conjunction with this embodiment. In this embodiment, the number of washing units is one, the number of scrubbing units is two, and the number of dehydration units is one. The operation steps of wafer cleaning are as follows: First, put the wafer into the cleaning rotating wheel 101 in the vertical direction. The end of the cleaning rotating wheel 101 is connected with a motor, which provides the rotating power for the cleaning rotating wheel 101; The cleaning liquid is injected into the inside, and the megasonic device 103 located at the bottom of the cleaning containment box 102 starts to work, and the contaminants are separated from the wafer by over-frequency vibration, and the contaminants are taken away by the cleaning liquid.

接著,機械手臂4將晶圓由沖洗單元平行移動至刷洗單元,晶圓垂直方向進入刷洗單元,平行設置的兩個刷洗頭202同時向晶圓方向旋轉,晶圓受向下的擠壓運動,進入刷洗旋轉輪203,刷洗旋轉輪203由電機提供旋轉動力,帶動晶圓在刷洗容納箱201內勻速、穩定的旋轉,同時刷洗容納箱201上部側壁上的刷洗噴嘴204內注入清洗液,以提高污染物的去除效率。 Then, the robot arm 4 moves the wafer from the washing unit to the scrubbing unit in parallel, and the wafer enters the scrubbing unit in the vertical direction. The two scrubbing heads 202 arranged in parallel rotate in the direction of the wafer at the same time, and the wafer is squeezed downward. Enter the scrubbing rotating wheel 203. The scrubbing rotating wheel 203 is powered by a motor to drive the wafers to rotate at a uniform speed and stable in the scrubbing container 201. At the same time, the scrubbing nozzle 204 on the upper side wall of the scrubbing container 201 is injected with cleaning liquid to improve The removal efficiency of pollutants.

接著,機械手臂4將晶圓由沖洗單元平行移動至下一 個刷洗單元,晶圓再次沿垂直方向進入下一個刷洗單元;平行設置的兩個刷洗頭202同時向晶圓方向旋轉,晶圓受向下的擠壓運動,進入刷洗旋轉輪203,刷洗旋轉輪203由電機提供旋轉動力,帶動晶圓在刷洗容納箱201內勻速、穩定的旋轉,同時刷洗容納箱201上部側壁上的刷洗噴嘴204內注入清洗液,以提高污染物的去除效率。 Next, the robotic arm 4 moves the wafer in parallel from the washing unit to the next One scrubbing unit, the wafer enters the next scrubbing unit again in the vertical direction; two scrubbing heads 202 arranged in parallel rotate in the direction of the wafer at the same time, and the wafer is squeezed downward and enters the scrubbing rotating wheel 203, and the scrubbing rotating wheel 203 is powered by a motor to drive the wafers to rotate at a uniform speed and stably in the scrubbing container 201. At the same time, the scrubbing nozzle 204 on the upper side wall of the scrubbing container 201 is injected with cleaning liquid to improve the removal efficiency of pollutants.

最後,機械手臂4將晶圓由刷洗單元平移至脫水單元,同時,機械手臂4將夾持的晶圓整體水平旋轉,由晶圓由垂直放置變為水平放置。晶圓水平放置在脫水單元的升降臺302上,固定塊305和固定爪303抓緊晶圓;驅動馬達307帶動旋轉軸306旋轉,從而帶動設置在旋轉軸306上的升降臺302自由旋轉;同時,設置在脫水容納箱301側壁上的噴水噴嘴304自動開啟、關閉噴水,噴除晶圓表明的雜物;升降臺302繼續旋轉,直到晶圓表面液體全部去除,然後升降臺302的旋轉功能關閉,升降臺302升起,固定爪303打開,機械手臂4將乾燥好的晶圓平移至指定位置。 Finally, the robot arm 4 translates the wafer from the scrubbing unit to the dehydration unit. At the same time, the robot arm 4 rotates the clamped wafer as a whole horizontally, changing the wafer from vertical placement to horizontal placement. The wafer is placed horizontally on the lifting platform 302 of the dehydration unit, the fixed block 305 and the fixed claw 303 grip the wafer; the driving motor 307 drives the rotation shaft 306 to rotate, thereby driving the lifting platform 302 provided on the rotation shaft 306 to rotate freely; at the same time, The water spray nozzle 304 arranged on the side wall of the dehydration containment box 301 automatically opens and closes the water spray to spray out the debris indicated by the wafer; the lifting platform 302 continues to rotate until the liquid on the wafer surface is completely removed, and then the rotation function of the lifting platform 302 is closed. The lifting platform 302 is raised, the fixed claw 303 is opened, and the mechanical arm 4 translates the dried wafer to a designated position.

該沖洗單元10包括一感測器,監測該清洗從動輪101b的轉速並提供一回饋信號至該裝置之一伺服器,且該刷洗單元20監測該清洗從動輪203b的轉速並提供一回饋信號至該裝置之該伺服器。 The washing unit 10 includes a sensor that monitors the rotation speed of the washing driven wheel 101b and provides a feedback signal to a server of the device, and the washing unit 20 monitors the rotation speed of the washing driven wheel 203b and provides a feedback signal to The server of the device.

本發明提供的一種晶圓清洗裝置,沖洗單元、刷洗單元採用垂直方向作業,脫水單元採用水平方向作業,有效改善了晶圓清洗效果,同時解決了浮水印殘留的問題,提高了晶圓清洗裝置的總體效果。 The invention provides a wafer cleaning device. The flushing unit and the scrubbing unit are operated in a vertical direction, and the dehydration unit is operated in a horizontal direction. This effectively improves the wafer cleaning effect, solves the problem of residual watermarks, and improves the wafer cleaning device. The overall effect.

本文中的用語「一」或「一種」係用以敘述本創作之元件及成分。此術語僅為了敘述方便及給予本創作之基本觀念。此敘述應被理解為包括一種或至少一種,且除非明顯地另有所指,表示單數時亦包括複數。於申請專利範圍中和「包含」一詞一起使用時,該用語「一」可意謂一個或超過一個。此外,本文中的用語「或」其意同「及/或」。 The term "one" or "one" in this article is used to describe the elements and components of this creation. This term is only for the convenience of description and to give the basic idea of this creation. This description should be understood to include one or at least one, and unless clearly indicated otherwise, the singular number also includes the plural number. When used with the word "include" in the scope of patent application, the term "one" can mean one or more than one. In addition, the term "or" in this article means the same as "and/or".

除非另外規定,否則諸如「上方」、「下方」、「向上」、「左邊」、「右邊」、「向下」、「本體」、「底座」、「垂直」、「水平」、「側」、「較高」、「下部」、「上部」、「上方」、「下面」等空間描述係關於圖中所展示之方向加以指示。應理解,本文中所使用之空間描述僅出於說明之目的,且本文中所描述之結構之實際實施可以任何相對方向在空間上配置,此限制條件不會改變本發明實施例之優點。舉例來說,在一些實施例之描述中,提供「在」另一元件「上」之一元件可涵蓋前一元件直接在後一元件上(例如,與後一元件實體接觸)的狀況以及一或複數個介入元件位於前一元件與後一元件之間的狀況。 Unless otherwise specified, such as "above", "below", "up", "left", "right", "down", "body", "base", "vertical", "horizontal", "side" , "Higher", "Lower", "Upper", "Above", "Below" and other space descriptions refer to the directions shown in the figure. It should be understood that the spatial description used herein is only for illustrative purposes, and the actual implementation of the structure described herein can be spatially arranged in any relative direction, and this restriction will not change the advantages of the embodiments of the present invention. For example, in the description of some embodiments, providing an element "on" another element may cover the situation where the previous element is directly on the next element (for example, physically contacting the next element) and a Or a situation where a plurality of intervening elements are located between the previous element and the next element.

如本文中所使用,術語「大致」、「實質上」、「實質的」及「約」用以描述及考慮微小之變化。當與事件或情形結合使用時,該等術語可意指事件或情形明確發生之情況以及事件或情形極近似於發生之情況。 As used herein, the terms "approximately", "substantial", "substantial" and "about" are used to describe and consider minor changes. When used in conjunction with an event or situation, these terms can mean a situation in which the event or situation clearly occurred and the event or situation closely resembled the situation in which it occurred.

以上所述之實施例僅係為說明本創作之技術思想及特點,其目的在使熟習此項技藝之人士能夠瞭解本創作之內容並據以實施,當不能以之限定本創作之專利範圍,依本創作所揭示之精神所作之均等變化或修飾,仍應涵蓋在本創作之專利範圍內。 The above-mentioned embodiments are only to illustrate the technical ideas and characteristics of this creation, and their purpose is to enable those who are familiar with the art to understand the content of this creation and implement them accordingly. When they cannot be used to limit the patent scope of this creation, Equal changes or modifications made in accordance with the spirit of this creation should still be covered by the scope of the patent of this creation.

4:機械手臂 4: Robotic arm

10:沖洗單元 10: flushing unit

20:刷洗單元 20: scrubbing unit

30:脫水單元 30: Dehydration unit

40:隔牆 40: Partition wall

45:開口 45: opening

100:框架 100: frame

Claims (5)

一種用於清洗一晶圓的裝置,包括設置於一框架(100)中之一沖洗單元(10)、一刷洗單元(20)、一脫水單元(30)及一機械手臂(4),該沖洗單元(10)、該刷洗單元(20)及該脫水單元(30)經配置以與一機械手臂(4)於操作時對應設置,該沖洗單元上設置有放置該晶圓用的一清洗旋轉輪(101),該清洗旋轉輪(101)經配置以垂直承收該晶圓,該刷洗單元(20)上設置有放置該晶圓用的一刷洗旋轉輪(203),該刷洗旋轉輪(203)經配置以垂直承收該晶圓,該脫水單元經構形以水平固持該晶圓;其中該沖洗單元(10)包括有一清洗容納箱(102)、一兆聲裝置(103)及一清洗旋轉輪(101),該兆聲裝置(103)設置在該清洗容納箱(102)的底部,該清洗旋轉輪(101)設置在該清洗容納箱(102)內,其包括一清洗主動輪(101a)及一清洗從動輪(101b),其中該清洗主動輪(101a)自側面提供旋轉動力,該清洗從動輪(101b)供垂直支撐力於該晶圓;其中該刷洗單元(20)包括有一刷洗容納箱(201)、一對刷洗頭(202)、一刷洗噴嘴(204)及一刷洗旋轉輪(203),該對刷洗頭(202)水平設置在該刷洗單元(20)的內部供刷洗該晶圓,該刷洗噴嘴(204)設置在該刷洗單元(20)上部的側壁上,該刷洗旋轉輪(203)設置在該對刷洗頭(202)的下方,其包括一刷洗主動輪(203a)及一刷洗從動輪(203b),該刷洗主動輪(203a)自側面提供旋轉動力,該刷洗從動輪(203b)供垂直支撐;且其中該脫水單元(30)包括有一脫水容納箱(301)、一升降臺(302)、一固定塊(305)、一固定爪(303)、一噴水噴嘴(304)及一旋轉軸(306),其中該升降臺(302)設置於該旋轉軸(306)上,該旋轉軸(306)由一 驅動馬達(307)驅動旋轉,該固定爪(303)及該固定塊(305)設置在該升降臺(302)上,該升降臺(302)設置在該脫水容納箱(301)內,且該噴水噴嘴(304)設置在脫水容納箱(301)的側壁上。 A device for cleaning a wafer includes a washing unit (10), a scrubbing unit (20), a dehydration unit (30) and a mechanical arm (4) arranged in a frame (100). The unit (10), the scrubbing unit (20), and the dehydration unit (30) are configured to correspond to a mechanical arm (4) during operation, and a cleaning rotating wheel for placing the wafer is provided on the washing unit (101), the cleaning rotating wheel (101) is configured to receive the wafer vertically, the scrubbing unit (20) is provided with a scrubbing rotating wheel (203) for placing the wafer, the scrubbing rotating wheel (203) ) Is configured to receive the wafer vertically, and the dehydration unit is configured to hold the wafer horizontally; wherein the washing unit (10) includes a washing container (102), a megasonic device (103), and a washing Rotating wheel (101), the megasound device (103) is arranged at the bottom of the cleaning containing box (102), the cleaning rotating wheel (101) is arranged in the cleaning containing box (102), which includes a cleaning driving wheel ( 101a) and a cleaning driven wheel (101b), wherein the cleaning driving wheel (101a) provides rotation power from the side, and the cleaning driven wheel (101b) provides vertical support to the wafer; wherein the scrubbing unit (20) includes a A scrubbing container (201), a pair of scrubbing heads (202), a scrubbing nozzle (204) and a scrubbing rotating wheel (203), the pair of scrubbing heads (202) are horizontally arranged inside the scrubbing unit (20) for scrubbing For the wafer, the scrubbing nozzle (204) is arranged on the side wall of the upper part of the scrubbing unit (20), and the scrubbing rotating wheel (203) is arranged below the pair of scrubbing heads (202), which includes a scrubbing driving wheel (203a) ) And a scrubbing driven wheel (203b), the scrubbing driving wheel (203a) provides rotation power from the side, and the scrubbing driven wheel (203b) is vertically supported; and the dehydration unit (30) includes a dehydration containing box (301) , A lifting platform (302), a fixed block (305), a fixed claw (303), a water spray nozzle (304) and a rotating shaft (306), wherein the lifting platform (302) is arranged on the rotating shaft (306) ), the rotation axis (306) consists of a The drive motor (307) drives and rotates, the fixed claw (303) and the fixed block (305) are arranged on the lifting platform (302), the lifting platform (302) is arranged in the dehydration containing box (301), and the The water spray nozzle (304) is arranged on the side wall of the dehydration containing box (301). 如請求項1之裝置,其中該沖洗單元(10)、該刷洗單元(20)係並列設置,且該裝置進一步包括一隔板(40),其中該沖洗單元(10)以及該刷洗單元(20)設置於該隔板(40)之一側,該脫水單元(30)設置於該隔板(40)之另一側,該隔板(40)包含一窗口(45)於其中供該機械手臂(4)傳遞該晶圓。 Such as the device of claim 1, wherein the flushing unit (10) and the scrubbing unit (20) are arranged side by side, and the device further includes a partition (40), wherein the flushing unit (10) and the scrubbing unit (20) ) Is arranged on one side of the partition (40), the dehydration unit (30) is arranged on the other side of the partition (40), and the partition (40) includes a window (45) in it for the robot arm (4) Transfer the wafer. 如請求項2之裝置,其中,該機械手臂(4)設置在該沖洗單元(10)以及該刷洗單元(20)的上方,其經配置以在垂直方向自該沖洗單元(10)及該刷洗單元(20)夾持該晶圓,並水平橫向運動,該機械手臂(4)可旋轉至一水平位置,使該晶圓透過該窗口(45),水平放置在該脫水單元(30)的該升降臺(302)上。 Such as the device of claim 2, wherein the robot arm (4) is arranged above the washing unit (10) and the scrubbing unit (20), and it is configured to vertically move from the washing unit (10) and the scrubbing unit (20). The unit (20) clamps the wafer and moves horizontally and laterally. The robotic arm (4) can rotate to a horizontal position so that the wafer passes through the window (45) and is placed horizontally on the dehydration unit (30). On the lifting platform (302). 如請求項3之裝置,其中該沖洗單元(10)包括一感測器,監測該清洗從動輪(101b)的轉速並提供一第一回饋信號至該裝置之一伺服器,且該刷洗單元(20)監測該清洗從動輪(203b)的轉速並提供一第二回饋信號至該裝置之該伺服器。 Such as the device of claim 3, wherein the flushing unit (10) includes a sensor that monitors the rotation speed of the cleaning driven wheel (101b) and provides a first feedback signal to a server of the device, and the scrubbing unit ( 20) Monitor the rotation speed of the cleaning driven wheel (203b) and provide a second feedback signal to the server of the device. 如請求項4之裝置,在設置有該沖洗單元(10)以及該刷洗單元(20)之該隔板(40)之該側的上方設置有第一過濾器(110),且在設置有該脫水單元(30)之該隔板(40)之該另一側上方設置有第二過濾器(120)。 For example, in the device of claim 4, a first filter (110) is provided above the side of the partition (40) provided with the flushing unit (10) and the scrubbing unit (20), and the A second filter (120) is arranged above the other side of the partition (40) of the dehydration unit (30).
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