TWI725578B - Gate modulation with inductor - Google Patents
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- 238000012546 transfer Methods 0.000 claims abstract description 45
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000004804 winding Methods 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001815 facial effect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L27/146—Imager structures
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- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/491—Details of non-pulse systems
- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
- G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H01L27/144—Devices controlled by radiation
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- H01L27/148—Charge coupled imagers
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
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Abstract
Description
本發明大體上係關於電子裝置,且特定言之(但非排他地),係關於影像感測器。 The present invention generally relates to electronic devices, and specifically (but not exclusively) relates to image sensors.
隨著3D應用之普及在諸如成像、電影、遊戲、電腦、使用者介面、面部辨識、物件辨識、擴增實境等之領域中持續成長,對三維(3D)相機之興趣正在增加。建立3D影像之典型被動方式係使用多個相機擷取立體影像或多個影像。使用立體影像,可以對影像中之物件進行三角量測以建立3D影像。此三角量測技術之一個缺點係難以使用小型裝置建立3D影像,因為各台相機之間必須存在一最小分隔距離以便建立三維影像。另外,此技術很複雜,且因此需要大量電腦處理能力以便即時建立3D影像。 As the popularity of 3D applications continues to grow in fields such as imaging, movies, games, computers, user interfaces, facial recognition, object recognition, augmented reality, etc., interest in three-dimensional (3D) cameras is increasing. A typical passive way to create 3D images is to use multiple cameras to capture three-dimensional images or multiple images. Using 3D images, you can triangulate objects in the image to create a 3D image. One disadvantage of this triangulation technique is that it is difficult to use a small device to create a 3D image, because there must be a minimum separation distance between the cameras in order to create a 3D image. In addition, this technology is very complicated, and therefore requires a large amount of computer processing power in order to create 3D images in real time.
對於需要即時獲取3D影像之應用,有時利用基於飛行時間量測之主動深度成像系統。飛行時間相機通常使用將光引導至一物件之一光源,偵測自物件反射之光之一感測器及基於光行進至物件及自物件行進所花費之往返時間計算至物件之距離之一處理單元。 For applications that require real-time acquisition of 3D images, an active depth imaging system based on time-of-flight measurement is sometimes used. Time-of-flight cameras usually use a light source that guides light to an object, a sensor that detects light reflected from the object, and a process that calculates the distance to the object based on the round trip time it takes for the light to travel to and from the object. unit.
獲取3D影像之一持續挑戰係平衡飛行時間相機之所期望效能參數與系統之物理大小及電力約束。舉例而言,用於成像遠物件及近物 件之飛行時間系統之電力要求可能有很大之不同。此等挑戰因外部參數(例如,所期望之相機圖框速率、深度解析度及側向解析度)及固有參數(例如,感測器之量子效率、填充因數、抖動及雜訊)而變得更加複雜。 One of the ongoing challenges of obtaining 3D images is to balance the expected performance parameters of the time-of-flight camera with the physical size and power constraints of the system. For example, for imaging far and near objects The electrical requirements of the time-of-flight system of the software may vary greatly. These challenges are caused by external parameters (for example, the desired camera frame rate, depth resolution, and lateral resolution) and inherent parameters (for example, the quantum efficiency of the sensor, fill factor, jitter, and noise) more complicated.
100:飛行時間系統 100: Time of Flight System
102:光源 102: light source
104:發射光 104: emitted light
110:反射光 110: Reflected light
116:透鏡 116: lens
120:複數個像素 120: multiple pixels
122:第一像素 122: the first pixel
126:控制器 126: Controller
130:物件 130: Object
200A:TOF感測器/電路 200A: TOF sensor/circuit
200B:電路 200B: Circuit
203:光電二極體 203: photodiode
205:第一轉移電晶體 205: The first transfer transistor
207:第二轉移電晶體 207: The second transfer transistor
209:第一浮動擴散部 209: The first floating diffusion
211:第二浮動擴散部 211: The second floating diffusion
213:電感器 213: Inductor
C(OX1):電容器 C(OX1): Capacitor
C(OX2):電容器 C(OX2): Capacitor
C1:電容 C1: Capacitance
C2:電容 C2: Capacitance
flens:焦距 f lens : focal length
L:電感 L: inductance
參考以下圖式描述本發明之非限制及非窮舉實例,其中相似元件符號指代貫穿多種視圖之相似部件,除非另有繪示。 Non-limiting and non-exhaustive examples of the present invention are described with reference to the following drawings, in which like reference numerals refer to similar parts throughout the various views, unless otherwise shown.
圖1係展示根據本發明之教示之一飛行時間(TOF)感測器之一個實例之一圖。 FIG. 1 is a diagram showing an example of a time-of-flight (TOF) sensor according to the teachings of the present invention.
圖2A展示根據本發明之教示之圖1之TOF感測器之部分之一實例性電路圖。 2A shows an exemplary circuit diagram of a portion of the TOF sensor of FIG. 1 according to the teachings of the present invention.
圖2B展示根據本發明之教示之圖2A之電路圖之部分之一實例性示意圖。 FIG. 2B shows an example schematic diagram of a portion of the circuit diagram of FIG. 2A according to the teachings of the present invention.
圖2C展示根據本發明之教示之圖2B之電感器之一實例性示意圖。 FIG. 2C shows an exemplary schematic diagram of the inductor of FIG. 2B according to the teachings of the present invention.
對應參考字元指示貫穿諸圖中若干視圖之對應組件。熟習此項技術者應瞭解,為了簡單且清楚之目的繪示圖中之元件,且並不一定按比例繪製元件。舉例而言,圖中一些元件之尺寸可相對於其他元件而被誇大以幫助改善對本發明之多種實施例之理解。而且,為了更方面地瞭解本發明之此等多種實施例,通常不描繪在商業可行之實施例中有用或必要之常見但好理解之元件。 Corresponding reference characters indicate corresponding components throughout the several views in the figures. Those familiar with the art should understand that the elements in the figures are drawn for simplicity and clarity, and the elements are not necessarily drawn to scale. For example, the size of some elements in the figures may be exaggerated relative to other elements to help improve the understanding of various embodiments of the present invention. Moreover, in order to understand these various embodiments of the present invention in a better way, common but well-understood elements that are useful or necessary in a commercially feasible embodiment are generally not depicted.
本文描述用於搭配電感器之閘調變之系統、設備及方法之 實例。在以下描述中,陳述諸多特定細節以便提供對實例之窮舉理解。然而,熟習相關技術者應認識到,可無需運用該特定細節之一或多者或可用其他方法、組件、材料等而實踐本文描述之技術。在其他情況中,未詳細展示或描述熟知結構、材料或操作以避免使某些態樣模糊。 This article describes the systems, equipment, and methods used for gate modulation with inductors Instance. In the following description, many specific details are stated in order to provide an exhaustive understanding of the examples. However, those familiar with the relevant technology should realize that one or more of the specific details may not be used or other methods, components, materials, etc. may be used to practice the technology described herein. In other cases, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.
貫穿本說明書對「一個實例」或「一個實施例」之參考意味著與實例相結合而描述之特定特徵、結構或特性包含於本發明之至少一個實例中。因此,貫穿本說明書在多個地方出現片語「在一個實例中」或「在一個實施例中」並不一定皆指代相同之實例。此外,在一或多個實例中特定特徵、結構或特性可以任何適合方式組合。 Reference throughout this specification to "one example" or "one embodiment" means that a particular feature, structure, or characteristic described in combination with the example is included in at least one example of the present invention. Therefore, the phrases "in one example" or "in one embodiment" appearing in multiple places throughout this specification do not necessarily all refer to the same example. In addition, specific features, structures, or characteristics in one or more examples can be combined in any suitable manner.
一些成像飛行時間(iTOF)感測器以自10MHz直至數100MHz範圍內之頻率全域地調變在裝置中之閘。感測器技術可使用閘調變將電荷自光電二極體轉移至浮動擴散部中。一些感測器可使用閘調變以在光電二極體較大時加速光電二極體內之電荷轉移。然而,閘調變消耗大量電力,尤其當閘電容較大、閘調變速度較高及/或閘調變電壓擺動較大時。 Some imaging time-of-flight (iTOF) sensors are fully modulated in the device with frequencies ranging from 10 MHz to several 100 MHz. Sensor technology can use gate modulation to transfer charge from the photodiode to the floating diffusion. Some sensors can use gate modulation to accelerate charge transfer within the photodiode when the photodiode is large. However, gate modulation consumes a lot of power, especially when the gate capacitance is large, the gate modulation speed is high, and/or the gate modulation voltage swings large.
如將展示,根據本發明之教示之實例電路包含以較高頻率調變之兩個閘。當一個閘接通時,另一閘關斷。電感器串聯耦合於此兩個閘之間且在接通及關斷閘時利用LC振盪(即,諧振電路)回收利用閘電容電力。因此,在一些實例中,減小LC振盪器中之電阻以改良效率係有幫助的。使用像素級混合鍵,靈活性可用於特殊設計及程序以減小在一些實例中提出之金屬線之電阻。 As will be shown, an example circuit according to the teachings of the present invention includes two gates modulated at a higher frequency. When one gate is closed, the other gate is closed. The inductor is coupled in series between the two gates and utilizes LC oscillation (ie, resonant circuit) to recycle the power of the gate capacitance when the gates are turned on and off. Therefore, in some instances, it is helpful to reduce the resistance in the LC oscillator to improve the efficiency. Using pixel-level hybrid keys, flexibility can be used for special designs and procedures to reduce the resistance of the metal wires proposed in some examples.
下文將進一步詳述上文論述之實施例及其他實施例,因為其與圖相關。 The embodiments discussed above and other embodiments will be further detailed below, because they are related to the figures.
圖1係展示根據本發明之教示之一飛行時間系統100之一個
實例之一圖。飛行時間系統100包含光源102、透鏡116、複數個像素120(包含第一像素122)及控制器126(其包含控制電路、記憶體、計數器裝置等)。控制器126耦合至光源102及複數個像素120(包含第一像素122)。複數個像素120定位在距透鏡116之一焦距flens處。如實例中展示,光源102及透鏡116定位在距物件130之一距離L處。應瞭解,未按比例繪示圖1,且在一個實例中,焦距flens遠小於透鏡116與物件130之間之距離L。因此,應瞭解,出於本發明之目的,根據本發明之教示,出於飛行時間量測之目的,距離L及距離L+焦距flens基本上相等。如繪示,複數個像素120及控制器126表示為單獨組件。然而,應瞭解,複數個像素120及控制器126全皆可整合至一相同堆疊式晶片感測器上且亦可包含一時間至數位轉換器(或複數個時間至數位轉換器,其中各像素與複數個時間至數位轉換器中之一對應者相關聯)。在其他實例中,複數個像素120及控制器126可整合至一非堆疊式平面感測器上。亦應瞭解,各像素(或甚至各SPAD)可具有用於儲存用於對偵測到的光子進行計數之數位位元或信號之一對應記憶體。
FIG. 1 is a diagram showing an example of a time-of-
飛行時間系統100可為一3D相機,其基於用複數個像素120進行之飛行時間量測計算將成像之一場景(例如,物件130)之影像深度資訊。複數個像素120中之各像素判定物件130之一對應部分之深度資訊使得可產生物件130之一3D影像。深度資訊藉由量測光自光源102傳播至物件130及回至飛行時間系統100之往返時間來判定。如繪示,光源102(例如,可發射可見、紅外或紫外光之一垂直腔表面發射雷射)經組態以將光104發射至一距離L外之物件130。接著,發射光104自物件130反射作為反射光110,部分反射光110朝向一距離L外之飛行時間系統100傳播且入
射於複數個像素120之上作為光。複數個像素120中之各像素(例如第一像素122)包含偵測影像光及將影像光轉換成電信號(例如電荷)之一光電二極體(例如一或多個單光子突崩二極體(SPAD))。
The time-of-
如所描繪之實例中展示,發射光104之脈衝自光源102傳播至物件130並回至複數個像素120之往返時間可用於使用以下方程式(1)及(2)中之以下關係判定距離L:
在一些實例中,飛行時間感測器100包含於一掌上型裝置(例如一行動電話、一平板電腦、一相機等)中,其具有大小及至少部分基於裝置之大小判定之電力約束。替代地或另外,飛行時間系統100可具有特定所期望之裝置參數,諸如圖框速率、深度解析度、側向解析度等。在一些實例中,飛行時間感測器100包含於一LiDAR系統中。
In some examples, the time-of-
圖2A展示根據本發明之教示之圖1之TOF感測器200A之部
分之一實例性電路圖。電路200B係一等效電路。如描繪,電路200A包含光電二極體203(例如,單光子突崩光電二極體(SPAD))、第一轉移電晶體205、第二轉移電晶體207、第一浮動擴散部209(例如一半導體材料中之一摻雜井)、第二浮動擴散部211(例如半導體材料中之一摻雜井)及電感器213。
FIG. 2A shows a part of the
如展示,第一浮動擴散209耦合至光電二極體203以接收在光電二極體203接收一或多個光子時產生之電荷。第二浮動擴散部211類似地耦合至光電二極體203以接收電荷。第一轉移電晶體205經耦合以將電荷自光電二極體203轉移至第一浮動擴散部209中,且第二轉移電晶體207經耦合以將電荷自光電二極體203轉移至第二浮動擴散部211中。電感器213耦合於第一轉移電晶體205之一第一閘端子與第二轉移電晶體207之一第二閘端子之間。在所描繪實例中,電感器213、第一轉移電晶體205之第一閘端子及第二轉移電晶體207之第二閘端子形成一諧振電路。因此,電感器213將一第一振盪電壓施加於第一閘端子及將一第二振盪電壓施加於第二閘端子。施加於第一閘端子之第一振盪電壓可與施加於第二閘端子之第二振盪電壓180度異相。如上所述,使用一電感器回收利用提供至轉移電晶體之閘電極之電荷可節省可觀之感測器電力量,此係因為每晶片可存在數以千計之光電二極體及轉移電晶體。
As shown, the first floating
亦展示當第一轉移電晶體205及第二轉移電晶體207在其各自時間接通時之與電路200A等效之電路200B。等效電路之振盪頻率ω0藉由方程式給出:
圖2B展示根據本發明之教示之圖2A之電路圖之部分之一實例性示意圖。在所描繪實例中,光電二極體203、第一轉移電晶體205之主動區、第二轉移電晶體207之主動區、第一浮動擴散部209及第二浮動擴散部211安置於半導體材料201(例如矽)中。光電二極體201定位於半導體材料201中以吸收光及回應於該光產生電荷。
FIG. 2B shows an example schematic diagram of a portion of the circuit diagram of FIG. 2A according to the teachings of the present invention. In the depicted example, the
如繪示,電感器213安置於一邏輯晶圓(例如,含有一或多個金屬層)中,且該邏輯晶圓耦合至半導體材料201之一非照明側。電感器213可耦合至閘電極,其具有穿過一接合氧化物自邏輯晶圓延伸至半導體材料201之接合通孔。如展示,電感器213可包含基本上平坦之一金屬線圈,且金屬線圈形成同心的基本上矩形形狀。然而,在其他實例中,金屬線圈可採用其他形狀,其等不一定係矩形的,諸如圓形、六邊形或類似物。另外,在一些實例中,金屬(例如銅、鋁、銀或類似物)可不包含一單一平面線圈,而可在邏輯晶圓中之不同平面中包含諸多線圈。
As shown, the
在一個實例中,假設Cox(TX)=5×10-8F/cm2(其中介電常數k=4,閘氧化物厚度大約=70nm),且必須同時打開/關閉(即,接通/關斷)所有轉移電晶體(TX)。因此,對於400×250轉移電晶體陣列,各TX具有0.1μm2之一大小,總電容係5pF。因此,在所描繪實例中,L需要為160nH以在TX1與TX2之間達成250MHz之切換振盪頻率。然而,受益於本發明之一般技術者應瞭解,此等參數可取決於裝置尺寸及材料選擇改變。 In an example, it is assumed that Cox (TX) = 5×10 -8 F/cm 2 (where the dielectric constant k = 4, the gate oxide thickness is approximately = 70 nm), and must be turned on/off at the same time (ie, turn on /Turn off) All transfer transistors (TX). Therefore, for a 400×250 transfer transistor array, each TX has a size of 0.1 μm 2 , and the total capacitance is 5 pF. Therefore, in the depicted example, L needs to be 160nH to achieve a switching oscillation frequency of 250MHz between TX1 and TX2. However, those of ordinary skill who benefit from the present invention should understand that these parameters may vary depending on the device size and material selection.
圖2C展示根據本發明之教示之圖2B之電感器之一實例性
示意圖。在所描繪實例中,電感器213包含基本上平坦之一金屬線圈(例如,在裝置之一橫截面中存在於一單個平面中)。如在所描繪實例中展示,金屬線圈形成同心的基本上矩形形狀且係一連續線圈。如圖2B中繪示,線圈之內端可耦合至第一轉移電晶體之閘,且線圈之外端可耦合至第二轉移電晶體之閘,或反之亦然。
FIG. 2C shows an example of the inductor of FIG. 2B according to the teachings of the present invention
Schematic. In the depicted example, the
在所描繪實例中,假設~250MHz操作,D(OUT)可為100μm,D(IN)可為20.8μm,寬度可小於1μm(例如0.4μm),間隔可小於1μm(例如0.4μm),且可存在25個或25個以上匝(例如,50匝-線圈之圈數)。受益於本發明之熟習此項技術者應瞭解,出於例示性目的僅描繪較少數目個匝,此係因為更多匝係冗餘的且不易於繪示。 In the depicted example, assuming ~250MHz operation, D(OUT) can be 100μm, D(IN) can be 20.8μm, width can be less than 1μm (eg 0.4μm), interval can be less than 1μm (eg 0.4μm), and can be There are 25 or more turns (for example, 50 turns-the number of turns of the coil). Those skilled in the art who benefit from the present invention should understand that only a smaller number of turns are depicted for illustrative purposes, because more turns are redundant and not easy to illustrate.
本發明之所繪示實例之上文描述,包含摘要中所描述之內容,不意欲為窮舉的或將本發明限制為所揭示之精確形式。雖然為了繪示之目的,本文描述本發明之特定實例,但熟習相關技術者應認識到,在本發明之範疇內,多種修改係可行的。 The above description of the illustrated examples of the present invention, including the content described in the abstract, is not intended to be exhaustive or to limit the present invention to the precise form disclosed. Although specific examples of the present invention are described herein for the purpose of illustration, those familiar with the related art should realize that various modifications are possible within the scope of the present invention.
鑑於上文詳細描述,可對本發明做出此等修改。隨附申請專利範圍中所使用之術語不應被解釋為將本發明限制於說明書中揭示之特定實例。實情係,本發明之範疇將完全由隨附申請專利範圍判定,該申請專利範圍應根據建立之申請專利範圍解釋之公認原則來解釋。 In view of the above detailed description, these modifications can be made to the present invention. The terms used in the scope of the attached application should not be construed as limiting the present invention to the specific examples disclosed in the specification. The fact is that the scope of the present invention will be determined entirely by the scope of the attached patent application, and the scope of the patent application shall be interpreted in accordance with the established principles for the interpretation of the scope of the patent application.
200A:TOF感測器/電路 200A: TOF sensor/circuit
200B:電路 200B: Circuit
203:光電二極體 203: photodiode
205:第一轉移電晶體 205: The first transfer transistor
207:第二轉移電晶體 207: The second transfer transistor
209:第一浮動擴散部 209: The first floating diffusion
211:第二浮動擴散部 211: The second floating diffusion
213:電感器 213: Inductor
C(OX1):電容器 C(OX1): Capacitor
C(OX2):電容器 C(OX2): Capacitor
C1:電容 C1: Capacitance
C2:電容 C2: Capacitance
L:電感 L: inductance
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