TWI724350B - An etching device - Google Patents

An etching device Download PDF

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TWI724350B
TWI724350B TW107143981A TW107143981A TWI724350B TW I724350 B TWI724350 B TW I724350B TW 107143981 A TW107143981 A TW 107143981A TW 107143981 A TW107143981 A TW 107143981A TW I724350 B TWI724350 B TW I724350B
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flow rate
storage tank
etching
acid
valve
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TW107143981A
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Chinese (zh)
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TW202011476A (en
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徐嘉陽
劉春
黃聖修
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大陸商友達光電（昆山）有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Abstract

An etching apparatus includes an etching chamber, an etching solution storage tank, a first acid storage tank, a second acid storage tank, a water storage tank, a first acid liquid, a second acid liquid, and clean water. The etching solution storage tank is connected to the etching chamber through the etching liquid conveying pipe; the first acid liquid storage tank is connected to the etching liquid storage tank through the first acid liquid conveying pipe; the second acid liquid storage tank is connected to etching solution storage tank through the second acid liquid conveying pipe; and the water storage tank is connected to the etching liquid storage tank through the water conveying pipeline. The first acid liquid is contained in the first acid liquid storage tank; the second acid liquid is contained in the second acid liquid storage tank; the clean water is contained in the water storage tank. When the etching apparatus is in an idle period, the first acid liquid, the second acid liquid, and the clean water are respectively supplied into the etching liquid storage tank through the first acid conveying pipe, the second acid conveying pipe, and the water conveying pipe.

Description

一種蝕刻裝置 An etching device

本發明是有關於蝕刻裝置，特別是有關於蝕刻裝置閒置狀態下蝕刻液濃度控制方法。 The present invention relates to an etching device, in particular to a method for controlling the concentration of an etching solution when the etching device is in an idle state.

在液晶顯示領域中，蝕刻裝置用於將基板進行蝕刻以形成所需線路圖案，蝕刻過程中需要將導電金屬或非金屬溶蝕，保留線路圖案部分。通常情況下，蝕刻液為酸性溶液，然而，因蝕刻裝置工作生產時酸性溶液(如HF)與玻璃反應會造成離子消耗，反應式如下： In the field of liquid crystal display, the etching device is used to etch the substrate to form the required circuit pattern. During the etching process, the conductive metal or non-metal needs to be eroded to retain the circuit pattern portion. Under normal circumstances, the etching solution is an acidic solution. However, the reaction of the acidic solution (such as HF) with the glass during the production of the etching device will cause ion consumption. The reaction formula is as follows:

玻璃主成份蝕刻加工反應特性： Reaction characteristics of glass main component etching process:

1)SiO2(s)+6HF(aq)=H2SiF6 ↓ (s)+2H2O(aq)---溶解反應式1 1) SiO 2 (s)+6HF(aq)=H 2 SiF 6 ↓ (s)+2H 2 O(aq)---dissolution reaction formula 1

2)SiO2(s)+4HF(g)=SiF4 ↑ (g)+2H2O(aq)---溶解副反應式2 2) SiO 2 (s)+4HF(g)=SiF 4 ↑ (g)+2H 2 O(aq)---dissolution side reaction formula 2

3)3SiF4(g)+4H2O(aq)=2H2SiF6 ↓ (s)+Si(OH)4 ↓ (s)----溶解副反應式3 3) 3SiF 4 (g)+4H 2 O(aq)=2H 2 SiF 6 ↓ (s)+Si(OH) 4 ↓ (s)----dissolution side reaction formula 3

4)Si(OH)4(aq)=SiO2(s)+2H2O(aq)----溶解副 反應式4 4) Si(OH) 4 (aq)=SiO 2 (s)+2H 2 O(aq)-dissolution side reaction formula 4

由於酸性的消耗，工作期間時需要定量補充HF與HCl。然而，先前技術中，僅僅是在蝕刻裝置工作期間時補充酸液，而在清潔期間時補充水。圖2B為先前技術蝕刻裝置蝕刻液濃度控制方法工作週期的補液示意圖，如圖2B所示，先前技術在工作期間，第一酸液及第二酸液補充至蝕刻液儲存槽；在清潔期間，水補充至蝕刻液儲存槽。如此一來，蝕刻裝置在閒置期間，水會發生揮發現象，使得在接續其後的工作期間中，酸液濃度不均，進而影響蝕刻效果與良率。 Due to the consumption of acid, HF and HCl need to be replenished quantitatively during the working period. However, in the prior art, only the acid is replenished during the working period of the etching device, and water is replenished during the cleaning period. Fig. 2B is a schematic diagram of the replenishment of the working cycle of the etching solution concentration control method of the prior art etching device. As shown in Fig. 2B, during the work of the prior art, the first acid solution and the second acid solution are replenished to the etching solution storage tank; during cleaning, Water is added to the etching solution storage tank. As a result, during the idle period of the etching device, water volatilizes, so that during the subsequent working period, the acid concentration is uneven, which further affects the etching effect and yield.

本發明的實施例提出一種蝕刻裝置，以解決先前技術蝕刻裝置在工作期間的酸液濃度不均問題，進而提高產品良率。 The embodiment of the present invention provides an etching device to solve the problem of uneven acid concentration during the operation of the prior art etching device, thereby improving the product yield.

為實現上述目的，本發明的實施例提供一種蝕刻裝置，包括：蝕刻腔室；蝕刻液儲存槽，通過蝕刻液輸送管道與蝕刻腔室連接；第一酸液儲存槽，通過第一酸液輸送管道與蝕刻液儲存槽連接；第二酸液儲存槽，通過第二酸液輸送管道與蝕刻液儲存槽連接； 水儲存槽，通過水輸送管道與蝕刻液儲存槽連接；第一酸液，容納於第一酸液儲存槽；第二酸液，容納於第二酸液儲存槽；以及清潔水，容納於水儲存槽；其中，當蝕刻裝置處於一閒置期間時，第一酸液、第二酸液及清潔水分別通過第一酸液輸送管道、第二酸液輸送管道與水輸送管道補入蝕刻液儲存槽。 In order to achieve the above objective, an embodiment of the present invention provides an etching device, including: an etching chamber; an etching solution storage tank connected to the etching chamber through an etching solution delivery pipe; a first acid storage tank, which is transported through the first acid solution The pipeline is connected with the etching solution storage tank; the second acid storage tank is connected with the etching solution storage tank through the second acid delivery pipeline; The water storage tank is connected to the etching solution storage tank through a water delivery pipe; the first acid solution is contained in the first acid solution storage tank; the second acid solution is contained in the second acid solution storage tank; and the clean water is contained in the water Storage tank; wherein, when the etching device is in an idle period, the first acid liquid, the second acid liquid and the clean water are respectively supplemented into the etching liquid storage through the first acid liquid conveying pipe, the second acid liquid conveying pipe and the water conveying pipe groove.

本發明的另一實施例提供一種蝕刻裝置，包括：蝕刻腔室；蝕刻溶液儲存槽，通過蝕刻液輸送管道連通於蝕刻腔室；第一酸液儲存槽，通過第一酸液輸送管道連通於蝕刻溶液儲存槽；第二酸液儲存槽，通過第二酸液輸送管道連通於蝕刻溶液儲存槽；水儲存槽，通過水輸送管道連通於蝕刻溶液儲存槽；以及第一酸液，容納於第一酸液儲存槽；第二酸液，容納於第二酸液儲存槽；清潔水，容納於水儲存槽；以及控制系統，包含一流量設定表，且控制系統依據流量設定表來分別操控第一酸液、第二酸液與清潔水補入蝕刻溶液 儲存槽的流量，其中，流量設定表包含：準備片資料組，具有第一準備流量、第二準備流量與準備水流量，且蝕刻裝置處於一閒置期間時，控制系統依據準備片資料組來控制流量；以及起始片資料組，具有第一起始流量、第二起始流量與起始水流量，且蝕刻裝置處於一工作期間時，控置系統依據起始片資料組來控制流量，其中第一準備流量小於第一起始流量，第二準備流量小於第二起始流量，準備水流量小於起始水流量。 Another embodiment of the present invention provides an etching device, including: an etching chamber; an etching solution storage tank connected to the etching chamber through an etching solution delivery pipeline; a first acid storage tank connected to the etching chamber through the first acid delivery pipeline Etching solution storage tank; second acid storage tank, connected to the etching solution storage tank through the second acid delivery pipeline; water storage tank, connected to the etching solution storage tank through the water delivery pipeline; and the first acid, contained in the first acid An acid storage tank; a second acid storage tank; a second acid storage tank; clean water, a water storage tank; and a control system, including a flow setting table, and the control system separately controls the first according to the flow setting table An acid solution, a second acid solution and clean water are added to the etching solution The flow rate of the storage tank, where the flow setting table includes: a preparation sheet data group, which has a first preparation flow rate, a second preparation flow rate, and a preparation water flow rate, and when the etching device is in an idle period, the control system controls according to the preparation sheet data group Flow; and the initial piece data group, having a first initial flow rate, a second initial flow rate, and an initial water flow rate, and when the etching device is in a working period, the control system controls the flow rate according to the initial piece data group, where the first A preparation flow rate is less than the first initial flow rate, the second preparation flow rate is less than the second initial flow rate, and the preparation water flow rate is less than the initial water flow rate.

10:蝕刻腔室 10: Etching chamber

20:蝕刻液儲存槽 20: Etching solution storage tank

30:第一酸液儲存槽 30: The first acid storage tank

40:第二酸液儲存槽 40: The second acid storage tank

50:水儲存槽 50: water storage tank

60:控制系統 60: control system

70:流量設定表 70: Flow setting table

71:準備片數據組 71: prepare slice data group

72:起始片數據組 72: Starting slice data group

1:第一閥門 1: The first valve

2:第二閥門 2: The second valve

3:第三閥門 3: The third valve

4:第四閥門 4: The fourth valve

a:蝕刻液輸送管道 a: Etching liquid delivery pipeline

b:第一酸液輸送管道 b: The first acid delivery pipeline

c:第二酸液輸送管道 c: The second acid delivery pipeline

d:水輸送管道 d: Water transmission pipeline

為讓本發明之上述和其他目的、特徵、有點與實施例能更明顯易懂，所附圖式之說明如下： In order to make the above and other objectives, features, advantages and embodiments of the present invention more comprehensible, the description of the accompanying drawings is as follows:

圖1係本發明的一實施例的蝕刻裝置的簡單示意圖。 FIG. 1 is a simple schematic diagram of an etching device according to an embodiment of the present invention.

圖2A係本發明的實施例的蝕刻裝置的工作週期示意圖。 2A is a schematic diagram of the working cycle of the etching device according to the embodiment of the present invention.

圖2B係先前技術的蝕刻裝置的工作週期示意圖。 FIG. 2B is a schematic diagram of the working cycle of the etching device of the prior art.

圖3係本發明的另一實施例的蝕刻裝置的簡單示意圖。 Fig. 3 is a simple schematic diagram of an etching device according to another embodiment of the present invention.

為使本發明的上述目的、特徵和優點能夠更加明顯易懂，下麵結合附圖對本發明的具體實施方式做詳細的說明。在 下面的描述中闡述了很多具體細節以便於充分理解本發明。但是本發明能夠以很多不同於在此描述的其他方式來實施，本領域技術人員可以在不違背本發明內涵的情況下做類似改進，因此本發明不受下麵公開的具體實施例的限制。 In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. in In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

本發明的實施例提出一種蝕刻裝置及蝕刻液濃度控制方法，當蝕刻裝置處於閒置期間時，通過向蝕刻液儲存槽中補入酸及水來維持蝕刻液的濃度，進而使得接續其後的工作期間中，蝕刻液的濃度可以保持穩定或均一性，進而提升良率。 The embodiment of the present invention provides an etching device and an etching solution concentration control method. When the etching device is idle, the concentration of the etching solution is maintained by adding acid and water to the etching solution storage tank, so as to continue the subsequent work During the period, the concentration of the etching solution can be kept stable or uniform, thereby increasing the yield.

圖1為本發明的實施例的蝕刻裝置的簡單示意圖，如圖1所示，蝕刻裝置包括：蝕刻腔室10、蝕刻液儲存槽20、第一酸液儲存槽30、第二酸液儲存槽40，其中蝕刻液儲存槽20通過蝕刻液輸送管道a與蝕刻腔室10連接，而第一酸液儲存槽30通過第一酸液輸送管道b與蝕刻液儲存槽20連接，第二酸液儲存槽40通過第二酸液輸送管道c與蝕刻液儲存槽20連接。水儲存槽50通過水輸送管道d與蝕刻液儲存槽20連接。另外，在本發明的較佳實施例中，水儲存槽50可與蝕刻腔室10連接，以對蝕刻腔室10內基板等進行水清洗。於本實施例中，第一酸液容納於第一酸液儲存槽30，而第二酸液容納於第二酸液儲存槽40，清潔水容納於水儲存槽50中。舉例說明，第一酸液為氫氟酸，而第二酸液為鹽酸。 FIG. 1 is a simple schematic diagram of an etching device according to an embodiment of the present invention. As shown in FIG. 1, the etching device includes: an etching chamber 10, an etching solution storage tank 20, a first acid storage tank 30, and a second acid storage tank 40. The etching solution storage tank 20 is connected to the etching chamber 10 through the etching solution delivery pipe a, and the first acid solution storage tank 30 is connected to the etching solution storage tank 20 through the first acid delivery pipe b, and the second acid solution is stored The tank 40 is connected to the etching solution storage tank 20 through the second acid solution delivery pipe c. The water storage tank 50 is connected to the etching solution storage tank 20 through a water delivery pipe d. In addition, in a preferred embodiment of the present invention, the water storage tank 50 may be connected to the etching chamber 10 to clean the substrates and the like in the etching chamber 10 with water. In this embodiment, the first acid solution is contained in the first acid solution storage tank 30, the second acid solution is contained in the second acid solution storage tank 40, and the clean water is contained in the water storage tank 50. For example, the first acid solution is hydrofluoric acid, and the second acid solution is hydrochloric acid.

於本實施例中，蝕刻裝置更包含第一閥門1、第二閥門2、第三閥門3及第四閥門4。具體而言，第一閥門1設置於蝕 刻液輸送管道a上，用以控制蝕刻液的輸送量。第二閥門2設置於第一酸液輸送管道b上，用以控制第一酸液的輸送量，第三閥門3設置於第二酸液輸送管道c上，用以控制第二酸液的輸送量。第四閥門4設置在水輸送管道d上，用以控制水的輸送量。 In this embodiment, the etching device further includes a first valve 1, a second valve 2, a third valve 3, and a fourth valve 4. Specifically, the first valve 1 is set at the The etching liquid conveying pipe a is used to control the conveying amount of the etching liquid. The second valve 2 is arranged on the first acid liquid delivery pipe b to control the delivery volume of the first acid liquid, and the third valve 3 is arranged on the second acid liquid delivery pipe c to control the delivery of the second acid liquid the amount. The fourth valve 4 is arranged on the water delivery pipe d to control the delivery volume of water.

图2A为本发明實施例的蚀刻装置的工作周期示意图，請參考圖1及圖2A，本發明的實施例的工作週期依序由閒置期間、工作期間與清潔期間的週期性時序所形成。于闲置期间，第二阀门2、第三阀门3及第四阀门4开启，第一酸液將补充至蚀刻液储存槽20，第二酸液將补充至蚀刻液储存槽20，清洁水將补充至蚀刻液储存槽20，以控制酸液浓度。于工作期间，第二阀门2、第三阀门3及第四阀门4开启，第一酸液將补充至蚀刻液储存槽20，第二酸液将补充至蚀刻液储存槽20，清洁水将补充至蚀刻液储存槽20。此外，于清洁期间，第二阀门2、第三阀门3并闭，第四阀门4开启，第一酸液停止补充至蚀刻液储存槽20，第二酸液停止补充至蚀刻液储存槽20，清洁水将补充至蚀刻液储存槽20。 2A is a schematic diagram of the working cycle of the etching device according to the embodiment of the present invention. Please refer to FIGS. 1 and 2A. The working cycle of the embodiment of the present invention is formed by the periodic time sequence of the idle period, the working period, and the cleaning period in sequence. During the idle period, the second valve 2, the third valve 3 and the fourth valve 4 are opened, the first acid solution will be replenished to the etching solution storage tank 20, the second acid solution will be replenished to the etching solution storage tank 20, and the clean water will be replenished To the etching solution storage tank 20 to control the acid concentration. During operation, the second valve 2, the third valve 3 and the fourth valve 4 are opened, the first acid solution will be replenished to the etching solution storage tank 20, the second acid solution will be replenished to the etching solution storage tank 20, and the clean water will be replenished To the etching solution storage tank 20. In addition, during the cleaning period, the second valve 2 and the third valve 3 are closed, the fourth valve 4 is opened, the first acid solution stops replenishing the etching solution storage tank 20, and the second acid solution stops replenishing the etching solution storage tank 20. The clean water will be replenished to the etching solution storage tank 20.

于本實施例的單一的工作週期中，工作期間是接續於閒置期間，而清潔期間是接續於工作期間。另外，每個工作週期可進行迴圈。於圖2A可以理解，通過在工作期間之前的閒置期間補充第一酸液、第二酸液及水，有效的維持蚀刻液的浓度，解決了工作期間因酸液浓度不均而使得产品产生水波紋现象的技术缺陷。 In the single working cycle of this embodiment, the working period is continued with the idle period, and the cleaning period is continued with the working period. In addition, each cycle can be looped. It can be understood from FIG. 2A that by replenishing the first acid solution, the second acid solution and water during the idle period before the working period, the concentration of the etching solution is effectively maintained, and the product produces water due to the uneven concentration of the acid solution during the working period. The technical defect of the ripple phenomenon.

圖3為本發明另一實施例的蝕刻裝置的簡單示意 圖，如圖3所示，與圖1實施例不同的是，本實施例的蝕刻裝置還包括控制系統60，控制系統60包含流量設定表70，且控制系統60依據流量設定表70來分別操控第一酸液、第二酸液與清潔水補入蝕刻溶液儲存槽20的流量。於本實施例中，流量設定表70包含準備片資料組71及起始片數據組72。具體而言，準備片資料組71具有第一準備流量、第二準備流量與準備水流量，且蝕刻裝置處於閒置期間時，控制系統依據準備片資料組71來控制流量。起始片資料組72具有第一起始流量、第二起始流量與起始水流量，且蝕刻裝置處於工作期間時，控置系統60依據起始片資料組72來控制流量。詳細來說，於閒置期間，控制系統60會依據準備片資料組71來控制各液體的流量，亦可控制各閥門的啟閉。舉例來說，準備片資料組71的第一準備流量可為第一酸液的流量，第二準備流量可為第二酸液的流量，而準備水流量則為清潔水的流量。因此，通過準備片資料組71的各流量設定，可以調控各液體的流量，進而調節于閒置期間時，其蝕刻液的酸堿濃度。如此一來，自動化的控制系統60可以達到更穩定、更便利地調節蝕刻液的濃度。同樣地，于工作期間時，控制系統60會依據起始片資料組72來控制各液體的流量，亦可控制各閥門的啟閉。舉例來說，起始片資料組72的第一起始流量可為第一酸液的流量，第二起始流量可為第二酸液的流量，而起始水流量則為清潔水的流量。如此一來，通過起始片資料組72的各流量設定，可以調控于工作期間時，其蝕刻液的酸堿濃度，進而完成蝕刻工藝。 Figure 3 is a simple schematic diagram of an etching device according to another embodiment of the present invention As shown in FIG. 3, unlike the embodiment in FIG. 1, the etching apparatus of this embodiment further includes a control system 60. The control system 60 includes a flow setting table 70, and the control system 60 controls the respective control systems according to the flow setting table 70. The first acid solution, the second acid solution, and the clean water are added to the flow rate of the etching solution storage tank 20. In this embodiment, the flow rate setting table 70 includes a preparation piece data group 71 and a starting piece data group 72. Specifically, the preparation sheet data group 71 has a first preparation flow rate, a second preparation flow rate, and a preparation water flow rate, and when the etching device is in an idle period, the control system controls the flow rate according to the preparation sheet data group 71. The initial piece data group 72 has a first initial flow rate, a second initial flow rate, and an initial water flow rate, and when the etching device is in operation, the control system 60 controls the flow rate according to the initial piece data group 72. In detail, during the idle period, the control system 60 controls the flow of each liquid according to the prepared sheet data group 71, and can also control the opening and closing of each valve. For example, the first preparation flow rate of the preparation piece data group 71 may be the flow rate of the first acid solution, the second preparation flow rate may be the flow rate of the second acid solution, and the preparation water flow rate may be the flow rate of clean water. Therefore, by preparing each flow rate setting of the sheet data group 71, the flow rate of each liquid can be adjusted, and then the acid concentration of the etching solution during the idle period can be adjusted. In this way, the automated control system 60 can achieve a more stable and convenient adjustment of the concentration of the etching solution. Similarly, during the working period, the control system 60 will control the flow of each liquid according to the initial data set 72, and can also control the opening and closing of the valves. For example, the first initial flow rate of the initial piece data set 72 may be the flow rate of the first acid liquid, the second initial flow rate may be the flow rate of the second acid liquid, and the initial water flow rate may be the flow rate of clean water. In this way, by setting each flow rate of the initial piece data set 72, the acid concentration of the etching solution during the working period can be adjusted, and the etching process can be completed.

於本實施例中，第一準備流量小於第一起始流量，第二準備流量小於第二起始流量，準備水流量小於起始水流量。其中，準備片資料組71的準備流量是指第0片(閒置期間)時的流量資料。 In this embodiment, the first preparation flow rate is less than the first initial flow rate, the second preparation flow rate is less than the second initial flow rate, and the preparation water flow rate is less than the initial water flow rate. Among them, the preparation flow rate of the preparation slice data group 71 refers to the flow rate data at the 0th slice (idle period).

Figure 107143981-A0305-02-0011-1
Figure 107143981-A0305-02-0011-1

請參閱表一，於閒置期間，其基板片數為第0片，即表示沒有基板進入蝕刻裝置，換言之，對應於閒置期間的各溶液流量資料為準備片資料組71，使得閒置期間亦可稱為準備期間，讓蝕刻液的濃度先達到穩定狀態，準備進入下一階段的工作期間。舉例而言，第一準備流量對應於第一酸液，即為0.2L/min，而第二準備流量則對應於第二酸液，為0.2L/min，準備水流量則為0.2L/min。請繼續查閱表一，於工作期間，意為基板進入蝕刻裝置而進行蝕刻工藝，使得工作期間所對應的基板片數可從第1片、第2片、第3片至第4片的設定流量記錄，其中表一內所記載的片數僅為舉例說明，不限於本發明。於本實施例，表一的工作期間對應於第1片基板片數的各溶液流量資料可視為起始片資料組72。舉例而言，第一起始流量對應於第一酸液，即為 0.4L/min，而第二起始流量則對應於第二酸液，為0.4L/min，起始水流量則為0.4L/min。 Please refer to Table 1. During the idle period, the number of substrate slices is the 0th slice, which means that no substrate enters the etching device. In other words, the solution flow data corresponding to the idle period is the preparation slice data group 71, so that the idle period can also be called For the preparation period, let the concentration of the etching solution reach a stable state first, and prepare to enter the next stage of work. For example, the first preparation flow rate corresponds to the first acid solution, which is 0.2L/min, the second preparation flow rate corresponds to the second acid solution, which is 0.2L/min, and the preparation water flow rate is 0.2L/min. . Please continue to refer to Table 1. During the working period, it means that the substrate enters the etching device and undergoes the etching process, so that the number of substrates corresponding to the working period can be set from the first, second, third to fourth sheet. Records, in which the number of pieces recorded in Table 1 is only an example, and is not limited to the present invention. In this embodiment, the solution flow data corresponding to the number of the first substrate during the working period in Table 1 can be regarded as the initial slice data group 72. For example, the first initial flow rate corresponds to the first acid solution, which is 0.4L/min, and the second initial flow rate corresponds to the second acid solution, which is 0.4L/min, and the initial water flow rate is 0.4L/min.

於本實施例中，第一準備流量小於第一起始流量，第二準備流量小於第二起始流量，且準備水流量也小於起始流量。詳言之，蝕刻裝置60于閒置期間時，並非真的進行蝕刻工藝，而是準備階段。因此，各溶液的流量不需與工作期間的流量相同，僅需要維持各溶液彼此之間的流量比例，使得閒置期間的蝕刻液濃度達到特定值(如可完成蝕刻工藝的濃度)，且保持穩定的濃度即可。於本實施例中，第一起始流量為第一準備流量的2倍，第二起始流量為第二準備流量的2倍，起始水流量為準備水流量的2倍。如此一來，可維持蝕刻液的濃度，且工藝良率較穩定。 In this embodiment, the first preparation flow rate is less than the first initial flow rate, the second preparation flow rate is less than the second initial flow rate, and the preparation water flow rate is also less than the initial flow rate. In detail, during the idle period, the etching device 60 does not actually perform an etching process, but is a preparation stage. Therefore, the flow rate of each solution does not need to be the same as the flow rate during the working period. It is only necessary to maintain the flow rate ratio of the solutions to each other, so that the concentration of the etching solution during the idle period reaches a specific value (such as the concentration that can complete the etching process) and remains stable The concentration can be. In this embodiment, the first initial flow rate is 2 times the first preparation flow rate, the second initial flow rate is 2 times the second preparation flow rate, and the initial water flow rate is 2 times the preparation water flow rate. In this way, the concentration of the etching solution can be maintained, and the process yield is relatively stable.

於本實施例的工作期間中，當基板片數增加時，其對應的第一酸液、第二酸液與清潔水的流量亦隨之增加。請參閱表1，基板片數增加時，其各溶液的流量則以等加級數的關係而隨之增加。具體而言，於工作期間，第一酸液不斷與基板進行蝕刻反應，因此，當完成1片基板的蝕刻反應時，則需要再多補充其剛剛反應完的第一酸液量。依此類推，使得隨基板片數增加時，其需要再補充的各溶液量亦為增加。於表一中，其流量增加為等加級數的關係，如第1片為0.4L/min，而第2片為0.6L/min，第3片則為0.8L/min，但本發明不以此為限。於不同實施例中，流量增加亦可為等比級數的關係，其視蝕刻工藝的情況可加以調整。 During the working period of this embodiment, when the number of substrates increases, the corresponding flow rates of the first acid solution, the second acid solution, and the cleaning water also increase. Please refer to Table 1. When the number of substrates increases, the flow rate of each solution will increase in accordance with the number of equal increments. Specifically, during the working period, the first acid solution continuously undergoes an etching reaction with the substrate. Therefore, when the etching reaction of one substrate is completed, it is necessary to replenish the amount of the first acid solution that has just been reacted. By analogy, as the number of substrates increases, the amount of each solution that needs to be refilled also increases. In Table 1, the increase in flow rate is based on the relationship of equal increments. For example, the first slice is 0.4L/min, the second slice is 0.6L/min, and the third slice is 0.8L/min, but the present invention does not Limit this. In different embodiments, the flow rate increase can also be a proportional series relationship, which can be adjusted according to the etching process.

本發明的實施例所提出的蝕刻裝置，其于閒置期間時通過向蝕刻液補充酸液及水的方式，有效的維持了蝕刻液的濃度。如此一來，保證蝕刻液一直處於可用階段，可有效控制蝕刻率並平衡蝕刻反應。進而解決了先前技術蝕刻裝置因蝕刻液水揮發後造成工作期間的酸液濃度不均，使得產品產生水波紋現象的技術缺陷。因此，本發明的實施例的蝕刻裝置可避免因蝕刻液不穩定而產出異常產品，同時避免了產能損失，提高了產率。 The etching device proposed by the embodiment of the present invention effectively maintains the concentration of the etching solution by replenishing the etching solution with acid and water during the idle period. In this way, it is ensured that the etching solution is always in the usable stage, which can effectively control the etching rate and balance the etching reaction. Furthermore, the technical defect of the prior art etching device that the concentration of the acid solution during the working period is uneven due to the volatilization of the etching solution water is solved, which causes the product to produce a water ripple phenomenon. Therefore, the etching device of the embodiment of the present invention can avoid producing abnormal products due to the instability of the etching solution, while avoiding production loss and improving the yield.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為准。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10:蝕刻腔室 10: Etching chamber

20:蝕刻液儲存槽 20: Etching solution storage tank

30:第一酸液儲存槽 30: The first acid storage tank

40:第二酸液儲存槽 40: The second acid storage tank

50:水儲存槽 50: water storage tank

1:第一閥門 1: The first valve

2:第二閥門 2: The second valve

3:第三閥門 3: The third valve

4:第四閥門 4: The fourth valve

a:蝕刻液輸送管道 a: Etching liquid delivery pipeline

b:第一酸液輸送管道 b: The first acid delivery pipeline

c:第二酸液輸送管道 c: The second acid delivery pipeline

d:水輸送管道 d: Water transmission pipeline

Claims (6)

一種蝕刻裝置，包括：一蝕刻腔室；一蝕刻液儲存槽，通過一蝕刻液輸送管道連通於所述蝕刻腔室；一第一酸液儲存槽，通過一第一酸液輸送管道連通於所述蝕刻溶液儲存槽；一第二酸液儲存槽，通過一第二酸液輸送管道連通於所述蝕刻溶液儲存槽；一水儲存槽，通過一水輸送管道連通於所述蝕刻溶液儲存槽；以及一第一酸液，容納於所述第一酸液儲存槽；一第二酸液，容納於所述第二酸液儲存槽；一清潔水，容納於所述水儲存槽；以及一控制系統，包含一流量設定表，且所述控制系統依據所述流量設定表來分別操控所述第一酸液、所述第二酸液與所述清潔水補入所述蝕刻溶液儲存槽的流量，其中，所述流量設定表包含：一準備片資料組，具有一第一準備流量、一第二準備流量與一準備水流量，且所述蝕刻裝置處於一閒置期間時，所述控制系統依據所述準備片資料組來控制流量；以及 一起始片資料組，具有一第一起始流量、一第二起始流量與一起始水流量，且所述蝕刻裝置處於一工作期間時，所述控置系統依據所述起始片資料組來控制流量，其中所述第一準備流量小於所述第一起始流量，所述第二準備流量小於所述第二起始流量，所述準備水流量小於所述起始水流量。 An etching device includes: an etching chamber; an etching solution storage tank connected to the etching chamber through an etching solution delivery pipe; a first acid storage tank connected to the etching solution through a first acid delivery pipeline The etching solution storage tank; a second acid storage tank connected to the etching solution storage tank through a second acid transfer pipeline; a water storage tank connected to the etching solution storage tank through a water transfer pipeline; And a first acid solution contained in the first acid solution storage tank; a second acid solution contained in the second acid solution storage tank; a clean water contained in the water storage tank; and a control The system includes a flow setting table, and the control system controls the flow rates of the first acid solution, the second acid solution, and the cleaning water into the etching solution storage tank respectively according to the flow setting table , Wherein the flow setting table includes: a preparation sheet data group having a first preparation flow rate, a second preparation flow rate and a preparation water flow rate, and when the etching device is in an idle period, the control system is based on The prepared piece data group to control the flow; and A starting piece data group has a first starting flow rate, a second starting flow rate, and an initial water flow rate, and when the etching device is in a working period, the control system will perform the data according to the starting piece data group The control flow rate, wherein the first preparation flow rate is less than the first initial flow rate, the second preparation flow rate is less than the second initial flow rate, and the preparation water flow rate is less than the initial water flow rate. 如申請專利範圍第1項所述之蝕刻裝置，其中，所述第一準備流量與所述第一起始流量分別為所述第一酸液的流量，所述第二準備流量與所述第二起始流量分別為所述第二酸液的流量，所述準備水流量與所述起始水流量分別為所述清潔水的流量。 According to the etching device described in claim 1, wherein the first preparation flow rate and the first initial flow rate are respectively the flow rate of the first acid solution, and the second preparation flow rate is the same as the second preparation flow rate. The initial flow rate is the flow rate of the second acid solution, and the preparation water flow rate and the initial water flow rate are respectively the flow rate of the clean water. 如申請專利範圍第1項所述之蝕刻裝置，其中，所述第一起始流量為所述第一準備流量的2倍，所述第二起始流量為所述第二準備流量的2倍，所述起始水流量為所述準備水流量的2倍。 The etching device according to the first item of the scope of patent application, wherein the first initial flow rate is twice the first preparation flow rate, and the second initial flow rate is twice the second preparation flow rate, The initial water flow rate is twice the preparation water flow rate. 如申請專利範圍第1項所述之蝕刻裝置，其中，包括：一第一閥門，所述第一閥門設置在所述蝕刻液輸送管道上；一第二閥門，所述第二閥門設置在所述第一酸液輸送管道上；一第三閥門，所述第三閥門設置在所述第二酸液輸送管道上；以及 一第四閥門，所述第四閥門設置在所述水輸送管道上，其中所述控制系統能夠開啟或關閉所述第一閥門、所述第二閥門、所述第三閥門與所述第四閥門。 The etching device described in item 1 of the scope of the patent application includes: a first valve, the first valve being arranged on the etching liquid delivery pipe; a second valve, the second valve being arranged on the On the first acid delivery pipeline; a third valve, the third valve is provided on the second acid delivery pipeline; and A fourth valve, the fourth valve is arranged on the water delivery pipeline, wherein the control system can open or close the first valve, the second valve, the third valve and the fourth valve valve. 如申請專利範圍第4項所述之蝕刻裝置，其中，包括一工作週期，所述工作週期依序由所述閒置期間、所述工作時間與所述清潔期間的週期性時序所組成。 The etching device described in claim 4 includes a working cycle, and the working cycle is sequentially composed of periodic timings of the idle period, the working time, and the cleaning period. 如申請專利範圍第5項所述之蝕刻裝置，其中，所述蝕刻裝置處於所述清潔期間時，所述控制系統分別將所述第二閥門、第三閥門關閉。 The etching device described in item 5 of the scope of patent application, wherein, when the etching device is in the cleaning period, the control system respectively closes the second valve and the third valve.
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