TWI723902B - Display device - Google Patents

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TWI723902B
TWI723902B TW109120276A TW109120276A TWI723902B TW I723902 B TWI723902 B TW I723902B TW 109120276 A TW109120276 A TW 109120276A TW 109120276 A TW109120276 A TW 109120276A TW I723902 B TWI723902 B TW I723902B
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layer
pseudo
display device
display area
recessed portion
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TW202201776A (en
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林育玄
姜信強
謝宗錞
陳建銓
陳鵬聿
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友達光電股份有限公司
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Abstract

A display device includes a display area and a non-display area and includes an array substrate, a cover, a sealing element, a recessed portion and at least one dummy droplet. The array substrate includes a substrate and a pixel array. The pixel array is on the substrate. The cover is disposed on the array substrate. The sealing element is configured to bond the array substrate and the cover and is on the non-display area. The recessed portion is on the non-display area. The recessed portion is at least formed in one of the array substrate and the cover. The dummy droplet is in the recessed portion.

Description

顯示裝置Display device

本發明是有關於一種顯示裝置。The present invention relates to a display device.

有機電子裝置為包括一層有機材料的裝置,有機材料利用電洞及電子來產生電荷的交流電。相較於習知的光源,有機電子裝置中的有機發光二極體(organic light emitting diode;OLED)具有高色彩飽和度、較低的功率消耗及較快的回應速度的表現,逐漸成為目前顯示器發展的主流之一。An organic electronic device is a device that includes a layer of organic material. The organic material uses holes and electrons to generate an alternating current of charge. Compared with conventional light sources, organic light emitting diodes (OLEDs) in organic electronic devices have high color saturation, lower power consumption and faster response speed, and have gradually become current displays. One of the mainstream of development.

由於有機電子裝置內的有機材料容易受到外界氧氣及水氣的影響而劣化,因此一般在基板上完成電子元件及有機材料的製作後,都會利用蓋板以及密封膠材(frit)將有機電子裝置密封起來。然而,若基板和蓋板之間在不同位置具有高度差異不一致之處,會影響光的干涉,造成不良的視覺效果。Since the organic materials in organic electronic devices are susceptible to deterioration due to the influence of external oxygen and moisture, generally after the production of electronic components and organic materials on the substrate, the organic electronic device will be sealed with a cover plate and a sealing compound (frit). Seal it up. However, if the height difference between the substrate and the cover plate is inconsistent at different positions, it will affect the interference of light and cause bad visual effects.

本發明一實施例提供一種顯示裝置,可避免牛頓環現象。An embodiment of the present invention provides a display device, which can avoid the Newton ring phenomenon.

本發明的顯示裝置包括顯示區及非顯示區,且包括陣列基板、蓋板、密封元件、凹陷部及至少一擬液滴。陣列基板包括基板及畫素陣列,畫素陣列位於基板上。蓋板設置於陣列基板上。密封元件用以接合陣列基板及蓋板,且位於非顯示區。凹陷部位於非顯示區,其中凹陷部至少形成於陣列基板及蓋板其中之一。擬液滴位於凹陷部中。The display device of the present invention includes a display area and a non-display area, and includes an array substrate, a cover plate, a sealing element, a recess, and at least one pseudo-droplet. The array substrate includes a substrate and a pixel array, and the pixel array is located on the substrate. The cover plate is arranged on the array substrate. The sealing element is used for joining the array substrate and the cover plate, and is located in the non-display area. The recessed portion is located in the non-display area, and the recessed portion is formed on at least one of the array substrate and the cover plate. The pseudo drop is located in the depression.

基於上述,凹陷部容納擬液滴。藉此蓋板與擬液滴相隔開,使得蓋板不會被擬液滴墊高,避免蓋板在非顯示區和密封元件之間的垂直距離太大,而增加蓋板之形變量,使蓋板表面不平整或凸起,所造成之顯示裝置顯示畫面時在顯示區的邊緣及非顯示區產生牛頓環現象(Newton’s rings),有助於維持顯示品質。Based on the above, the recessed portion accommodates pseudo droplets. As a result, the cover plate is separated from the pseudo droplets, so that the cover plate will not be raised by the pseudo droplets, and the vertical distance between the cover plate in the non-display area and the sealing element is prevented from being too large, and the deformation of the cover plate is increased, so that The surface of the cover plate is not flat or raised, which causes Newton's rings to occur at the edge of the display area and the non-display area when the display device displays images, which helps to maintain the display quality.

以下將參照本實施例之圖式以更全面地闡述本發明。然而,本發明亦可以各種不同的形式體現,而不應限於本文中所述之實施例。圖式中的層與區域的厚度會為了清楚起見而放大。相同或相似之參考號碼表示相同或相似之元件,以下段落將不再一一贅述。另外,實施例中所提到的方向用語,例如:上、下、左、右、前或後等,僅是參考附加圖式的方向。因此,使用的方向用語是用來說明並非用來限制本發明。Hereinafter, the present invention will be explained more fully with reference to the drawings of this embodiment. However, the present invention can also be embodied in various different forms and should not be limited to the embodiments described herein. The thickness of the layers and regions in the drawing will be exaggerated for clarity. The same or similar reference numbers indicate the same or similar elements, and the following paragraphs will not repeat them one by one. In addition, the directional terms mentioned in the embodiments, for example: up, down, left, right, front or back, etc., are only directions for referring to the attached drawings. Therefore, the directional terms used are used to illustrate but not to limit the present invention.

第1圖是依照本發明一實施例之顯示裝置10的俯視示意圖,第2A圖是沿著第1圖的剖線A-A’的剖面示意圖。請一併參照第1圖及第2A圖,顯示裝置10具有顯示區AA及非顯示區NA。在本實施例中,是以非顯示區NA環繞顯示區AA為例,但本發明不以此為限。在其他實施例中,非顯示區NA可以只位於顯示區AA的單側、雙側或三側。顯示裝置10包括陣列基板100、蓋板200、密封元件300、凹陷部400以及至少一擬液滴500。陣列基板100包括基板102及設置於基板102上的畫素陣列104,畫素陣列104配置於顯示區AA,顯示裝置10進行顯示時,畫素陣列104可發出光線以呈現畫面。切割線CUT用來定義顯示裝置10的區域。FIG. 1 is a schematic top view of a display device 10 according to an embodiment of the present invention, and FIG. 2A is a schematic cross-sectional view taken along the section line A-A' of FIG. Please refer to FIG. 1 and FIG. 2A together. The display device 10 has a display area AA and a non-display area NA. In this embodiment, the non-display area NA surrounds the display area AA as an example, but the invention is not limited to this. In other embodiments, the non-display area NA may only be located on one side, two sides, or three sides of the display area AA. The display device 10 includes an array substrate 100, a cover 200, a sealing element 300, a recess 400 and at least one pseudo drop 500. The array substrate 100 includes a substrate 102 and a pixel array 104 disposed on the substrate 102. The pixel array 104 is disposed in the display area AA. When the display device 10 performs display, the pixel array 104 can emit light to present a picture. The cutting line CUT is used to define the area of the display device 10.

畫素陣列104包括多個畫素P1。為了方便說明,第1圖中繪示了第一方向D1與第二方向D2,且第一方向D1與第二方向D2相異,例如第一方向D1與第二方向D2分別為第1圖的縱向方向與橫向方向,且其彼此呈正交關係。各畫素P1沿著第一方向D1及第二方向D2排列。各畫素P1可包括主動元件T1。主動元件T1配置於基板102上,且具有閘極G、源極S、汲極D以及半導體圖案SC。陣列基板100還可包括緩衝層105、閘絕緣層106、層間絕緣層108、無機絕緣層110以及平坦層112。閘絕緣層106配置於半導體圖案SC及閘極G之間。舉例而言,主動元件T1的閘極G可選擇性地配置於半導體圖案SC的上方,以形成頂部閘極型薄膜電晶體(top gate TFT),但本發明不以此為限。根據其他的實施例,主動元件T1的閘極G也可配置在半導體圖案SC的下方,即閘極G位於半導體圖案SC與基板102之間,以形成底部閘極型薄膜電晶體(bottom gate TFT)。The pixel array 104 includes a plurality of pixels P1. For the convenience of description, the first direction D1 and the second direction D2 are shown in Fig. 1, and the first direction D1 and the second direction D2 are different. For example, the first direction D1 and the second direction D2 are as shown in Fig. 1 respectively. The longitudinal direction and the lateral direction are orthogonal to each other. The pixels P1 are arranged along the first direction D1 and the second direction D2. Each pixel P1 may include an active element T1. The active device T1 is disposed on the substrate 102 and has a gate G, a source S, a drain D, and a semiconductor pattern SC. The array substrate 100 may further include a buffer layer 105, a gate insulating layer 106, an interlayer insulating layer 108, an inorganic insulating layer 110, and a flat layer 112. The gate insulating layer 106 is disposed between the semiconductor pattern SC and the gate electrode G. For example, the gate G of the active device T1 can be selectively disposed above the semiconductor pattern SC to form a top gate TFT, but the invention is not limited to this. According to other embodiments, the gate G of the active device T1 can also be arranged under the semiconductor pattern SC, that is, the gate G is located between the semiconductor pattern SC and the substrate 102 to form a bottom gate TFT (bottom gate TFT). ).

緩衝層105設置於基板102與主動元件T1之間。在本實施例中,半導體圖案SC可包括源極區SR、輕摻雜源極區LSR、通道區CH、輕摻雜汲極區LDR以及汲極區DR。輕摻雜源極區LSR位於源極區SR及通道區CH之間,輕摻雜汲極區LDR位於汲極區DR與通道區CH之間。且閘極G重疊於半導體圖案SC的通道區CH,但本發明不以此為限。根據其他的實施例,半導體圖案SC可僅包括源極區SR、通道區CH及汲極區DR。The buffer layer 105 is disposed between the substrate 102 and the active device T1. In this embodiment, the semiconductor pattern SC may include a source region SR, a lightly doped source region LSR, a channel region CH, a lightly doped drain region LDR, and a drain region DR. The lightly doped source region LSR is located between the source region SR and the channel region CH, and the lightly doped drain region LDR is located between the drain region DR and the channel region CH. In addition, the gate electrode G overlaps the channel region CH of the semiconductor pattern SC, but the invention is not limited to this. According to other embodiments, the semiconductor pattern SC may only include the source region SR, the channel region CH, and the drain region DR.

層間絕緣層108配置於閘絕緣層106上,且覆蓋主動元件T1的閘極G。主動元件T1的源極S與汲極D配置於層間絕緣層108上,且分別重疊於半導體圖案SC的源極區SR及汲極區DR。舉例而言,主動元件T1的源極S與汲極D都貫穿層間絕緣層108以及閘絕緣層106,以分別電性連接半導體圖案SC的源極區SR及汲極區DR。The interlayer insulating layer 108 is disposed on the gate insulating layer 106 and covers the gate G of the active device T1. The source S and the drain D of the active device T1 are disposed on the interlayer insulating layer 108, and overlap the source region SR and the drain region DR of the semiconductor pattern SC, respectively. For example, the source S and the drain D of the active device T1 both penetrate the interlayer insulating layer 108 and the gate insulating layer 106 to respectively electrically connect the source region SR and the drain region DR of the semiconductor pattern SC.

在本實施例中,半導體圖案SC的材質例如是低溫多晶矽(low temperature poly silicon;LTPS)半導體,也就是說,主動元件T1可以是低溫多晶矽薄膜電晶體。然而,本發明不限於此,於其他實施例中,主動元件T1也可以是非晶矽薄膜電晶體(amorphous silicon TFT,a-Si TFT)、微晶矽薄膜電晶體(micro Si TFT)或金屬氧化物電晶體(metal oxide transistor)。In this embodiment, the material of the semiconductor pattern SC is, for example, a low temperature poly silicon (LTPS) semiconductor, that is, the active device T1 may be a low temperature poly silicon thin film transistor. However, the present invention is not limited to this. In other embodiments, the active device T1 may also be an amorphous silicon TFT (a-Si TFT), a micro Si TFT, or a metal oxide. Metal oxide transistor.

無機絕緣層110覆蓋主動元件T1的源極S、汲極D以及層間絕緣層108的部分表面,並可選擇性地具有重疊於主動元件T1之汲極D的開口。平坦層112覆蓋無機絕緣層110與汲極D的部分表面。平坦層112的材料包括無機材料(例如:氧化矽、氮化矽、氮氧化矽、其它合適的材料或上述至少二種材料的堆疊 層)、有機材料(例如:聚酯類(PET)、聚烯類、聚丙醯類、聚碳酸酯類、聚環氧烷類、聚苯烯類、聚醚類、聚酮類、聚醇類、聚醛類、其它合適的材料或上述之組合)、其它合適的材料或上述之組合。The inorganic insulating layer 110 covers the source S, the drain D of the active device T1 and part of the surface of the interlayer insulating layer 108, and may optionally have an opening overlapping the drain D of the active device T1. The flat layer 112 covers part of the surface of the inorganic insulating layer 110 and the drain electrode D. The material of the flat layer 112 includes inorganic materials (for example: silicon oxide, silicon nitride, silicon oxynitride, other suitable materials or stacked layers of at least two of the above), organic materials (for example: polyester (PET), poly Alkenes, polypropylenes, polycarbonates, polyalkylene oxides, polyphenylenes, polyethers, polyketones, polyols, polyaldehydes, other suitable materials or combinations of the above), others Suitable materials or a combination of the above.

第3圖是第1圖的畫素P1的等效電路示意圖。請參照第3圖,各畫素P1除了主動元件T1還包括主動元件T2、電容器CS、掃描線SL、資料線DL、電源線PL及發光單元OLED。第2A圖雖為了圖面的清晰僅繪示主動元件T1,但基板102上可形成有主動元件T2,且主動元件T2可以是本領域中具有通常知識者所周知的任一種薄膜電晶體。在本實施例中,主動元件T2可稱為開關薄膜電晶體,其與掃描線SL以及資料線DL電性連接。主動元件T1可稱為驅動薄膜電晶體,其與主動元件T2、電源線PL以及發光單元OLED電性連接。在本實施例中,電容器CS與主動元件T1、T2以及電源線PL電性連接。基於上述,在本實施例中,畫素P1是以兩個主動元件(主動元件T1、T2)搭配一個電容器(電容器CS)(意即2T1C)的結構為例來說明,但本發明並不以此為限。換言之,本發明不限制畫素P1內的主動元件與電容器的數量。Fig. 3 is a schematic diagram of the equivalent circuit of the pixel P1 in Fig. 1. Referring to FIG. 3, in addition to the active device T1, each pixel P1 also includes an active device T2, a capacitor CS, a scan line SL, a data line DL, a power line PL, and a light-emitting unit OLED. Although FIG. 2A only shows the active device T1 for the sake of clarity of the drawing, the active device T2 may be formed on the substrate 102, and the active device T2 may be any thin film transistor known to those with ordinary knowledge in the art. In this embodiment, the active device T2 can be called a switching thin film transistor, which is electrically connected to the scan line SL and the data line DL. The active element T1 can be called a driving thin film transistor, which is electrically connected to the active element T2, the power line PL, and the light-emitting unit OLED. In this embodiment, the capacitor CS is electrically connected to the active elements T1 and T2 and the power line PL. Based on the above, in the present embodiment, the pixel P1 is described with a structure of two active elements (active elements T1, T2) and a capacitor (capacitor CS) (meaning 2T1C) as an example, but the present invention does not take This is limited. In other words, the present invention does not limit the number of active components and capacitors in the pixel P1.

請回到第1圖及第2A圖,陣列基板100還包括畫素定義層114,畫素定義層114位於平坦層112上,換言之,平坦層112配置於基板102及畫素定義層114之間。且畫素定義層114在顯示區AA中具有多個凹槽114a,每一凹槽114a所占區域在基板102上的垂直投影面積大致上相同,但本發明不以此為限。發光單元OLED形成於顯示區AA內的多個凹槽114a內。在本實施例中,各發光單元OLED包括依序堆疊於陣列基板100的平坦層112上的第一電極116、電洞注入層118、電洞傳輸層120、發光層122、電子傳輸層124及第二電極126。發光層122例如包括紅色發光層、藍色發光層及綠色發光層。如前所述,主動元件T1為用於驅動發光層122以顯示畫面的構件,因此可以理解主動元件T1位於顯示區AA中,而非顯示區NA中可以沒有主動元件T1。Please return to FIGS. 1 and 2A, the array substrate 100 further includes a pixel definition layer 114, which is located on the flat layer 112, in other words, the flat layer 112 is disposed between the substrate 102 and the pixel definition layer 114 . In addition, the pixel definition layer 114 has a plurality of grooves 114a in the display area AA, and the vertical projection area of the area occupied by each groove 114a on the substrate 102 is substantially the same, but the present invention is not limited thereto. The light emitting unit OLED is formed in a plurality of grooves 114a in the display area AA. In this embodiment, each light-emitting unit OLED includes a first electrode 116, a hole injection layer 118, a hole transport layer 120, a light emitting layer 122, an electron transport layer 124, and a first electrode 116 sequentially stacked on the flat layer 112 of the array substrate 100. The second electrode 126. The light emitting layer 122 includes, for example, a red light emitting layer, a blue light emitting layer, and a green light emitting layer. As mentioned above, the active device T1 is a member for driving the light-emitting layer 122 to display images. Therefore, it can be understood that the active device T1 is located in the display area AA, and the non-display area NA may not have the active device T1.

各個第一電極116可對應地連接一個主動元件T1。第一電極116排列於顯示區AA。多個第一電極116分別貫穿平坦層112與對應的主動元件T1的汲極D電性連接。於一些實施例中,第一電極116例如是光穿透式電極,光穿透式電極的材質包括金屬氧化物,例如銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層,但本發明並不以此為限。於其他實施例中,第一電極116也可以是反射式電極,反射式電極的材質包括金屬、合金、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。Each first electrode 116 can be connected to an active element T1 correspondingly. The first electrode 116 is arranged in the display area AA. The plurality of first electrodes 116 respectively penetrate the flat layer 112 and are electrically connected to the drain D of the corresponding active device T1. In some embodiments, the first electrode 116 is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, and aluminum zinc oxide. , Or other suitable oxides, or a stacked layer of at least two of the above, but the present invention is not limited to this. In other embodiments, the first electrode 116 may also be a reflective electrode, and the reflective electrode may be made of metal, alloy, or other suitable materials, or a stacked layer of a metal material and other conductive materials.

各發光單元OLED的電洞注入層118、電洞傳輸層120及發光層122例如是透過噴墨塗佈技術(Ink Jet Printing;IJP)形成於凹槽114a中。於本實施例中,電子傳輸層124及第二電極126依序覆蓋畫素定義層114及發光層122。舉例而言,在本實施例中,電子傳輸層124及第二電極126可以依序連續地由畫素定義層114上方,順應於畫素定義層114的側壁延伸至發光層122上方且覆蓋發光層122。於本實施例中,第二電極126例如是光穿透式電極,光穿透式電極的材質包括金屬氧化物,例如銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、或其它合適的氧化物、或者是上述至少兩者之堆疊層,但本發明並不以此為限。在其他實施例中,第二電極126也可以是反射式電極,反射式電極的材質包括金屬、合金、或其他合適的材料、或是金屬材料與其他導電材料的堆疊層。The hole injection layer 118, the hole transport layer 120 and the light emitting layer 122 of each light emitting unit OLED are formed in the groove 114a by ink jet printing (IJP), for example. In this embodiment, the electron transport layer 124 and the second electrode 126 sequentially cover the pixel definition layer 114 and the light-emitting layer 122. For example, in this embodiment, the electron transport layer 124 and the second electrode 126 can extend from the top of the pixel definition layer 114 to conform to the sidewall of the pixel definition layer 114 to the top of the light-emitting layer 122 and cover the light-emitting layer.层122。 The floor 122. In this embodiment, the second electrode 126 is, for example, a light-transmitting electrode, and the material of the light-transmitting electrode includes metal oxides, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, and aluminum zinc oxide. , Or other suitable oxides, or a stacked layer of at least two of the above, but the present invention is not limited to this. In other embodiments, the second electrode 126 may also be a reflective electrode, and the material of the reflective electrode includes a metal, an alloy, or other suitable materials, or a stacked layer of a metal material and other conductive materials.

蓋板200設置於陣列基板100上。蓋板200之材質可為玻璃、石英、有機聚合物、或是其它可適用的材料。The cover 200 is disposed on the array substrate 100. The material of the cover 200 can be glass, quartz, organic polymer, or other applicable materials.

密封元件300用以接合陣列基板100及蓋板200,且位於非顯示區NA。於本實施例中,密封元件300之材質可例如可以是玻璃膠(frit material)、紫外光膠、熱固性膠、壓克力樹脂(acrylic resin)或環氧樹脂(epoxy resin),但不以此為限。於本實施例中,密封元件300環繞顯示區AA。畫素定義層114及密封元件300之間的距離dt1為0.5毫米至5毫米。The sealing element 300 is used for bonding the array substrate 100 and the cover 200, and is located in the non-display area NA. In this embodiment, the material of the sealing element 300 can be, for example, frit material, ultraviolet light glue, thermosetting glue, acrylic resin or epoxy resin, but not Is limited. In this embodiment, the sealing element 300 surrounds the display area AA. The distance dt1 between the pixel definition layer 114 and the sealing element 300 is 0.5 mm to 5 mm.

擬液滴500位於非顯示區NA且位於顯示區AA四周,舉例而言,擬液滴500可環繞顯示區AA。且擬液滴500位於密封元件300及發光單元OLED之間。擬液滴500用於在噴墨塗佈技術中進行各發光單元OLED的各層別(例如電洞注入層118、電洞傳輸層120及發光層122)噴塗的位置的調整及確認噴塗的位置的正確性,藉此可提升噴墨塗佈的位置準確度。The pseudo-droplet 500 is located in the non-display area NA and around the display area AA. For example, the pseudo-droplet 500 may surround the display area AA. And the pseudo-droplet 500 is located between the sealing element 300 and the light-emitting unit OLED. The pseudo-droplet 500 is used to adjust the spraying position of each layer of each light-emitting unit OLED (such as the hole injection layer 118, the hole transport layer 120, and the light-emitting layer 122) in the inkjet coating technology and confirm the spraying position Accuracy, which can improve the position accuracy of inkjet coating.

擬液滴500例如是透過噴墨塗佈技術形成於凹陷部400中。第2B圖是第2A圖的區域R1的放大示意圖,請參照第2B圖,其中擬液滴500的材料包括由下列各者所構成的族群中選出的一層、兩層或多於兩層的有機材料層:電洞注入層、電洞傳輸層以及發光層,且電洞注入層、電洞傳輸層以及發光層的材料分別相同於各發光單元OLED的各層別(例如電洞注入層118、電洞傳輸層120以及發光層122)的材料,藉此可相容於畫素陣列104的製程並簡化製程。The pseudo-droplet 500 is formed in the recessed portion 400 by, for example, an inkjet coating technique. Figure 2B is an enlarged schematic view of area R1 in Figure 2A. Please refer to Figure 2B. The material of the pseudo-droplet 500 includes one, two, or more than two organic layers selected from the following groups: Material layers: hole injection layer, hole transport layer and light emitting layer, and the materials of the hole injection layer, hole transport layer and light emitting layer are respectively the same as the layers of each light emitting unit OLED (for example, hole injection layer 118, electricity The materials of the hole transport layer 120 and the light-emitting layer 122) can thereby be compatible with the manufacturing process of the pixel array 104 and simplify the manufacturing process.

請回到第1圖及第2A圖,凹陷部400位於非顯示區NA。凹陷部400至少形成於陣列基板100及蓋板200其中之一,且擬液滴500位於凹陷部400中。於本實施例中,各凹陷部400彼此透過畫素定義層114的一部分所隔開,各凹陷部400容納各擬液滴500。藉此蓋板200與擬液滴500相隔開,使得蓋板200不會被擬液滴500墊高,不會讓蓋板200表面不平整或凸起,所造成之顯示裝置10顯示畫面時在顯示區AA的邊緣及非顯示區NA產生牛頓環現象(Newton’s rings),有助於維持顯示品質。於本實施例中,凹陷部400的深度大於擬液滴500的厚度。Please return to FIG. 1 and FIG. 2A, the recess 400 is located in the non-display area NA. The recess 400 is formed on at least one of the array substrate 100 and the cover 200, and the pseudo-droplet 500 is located in the recess 400. In this embodiment, the recesses 400 are separated from each other by a part of the pixel definition layer 114, and each recess 400 accommodates each pseudo-droplet 500. As a result, the cover plate 200 is separated from the pseudo droplet 500, so that the cover plate 200 will not be raised by the pseudo droplet 500, and the surface of the cover plate 200 will not be uneven or raised. The edge of the display area AA and the non-display area NA generate Newton's rings, which helps maintain the display quality. In this embodiment, the depth of the recess 400 is greater than the thickness of the pseudo-droplet 500.

於密封元件300的頂面低於畫素定義層114的頂面的實施例中(見第2C圖),畫素定義層114的頂面和密封元件300的頂面之間的垂直距離dt2小於1.5微米。舉例而言,畫素定義層114的頂面和密封材料的頂面之間的垂直距離dt2為0.5微米至1.5微米。由於各凹陷部400容納各擬液滴500,可避免蓋板200在非顯示區NA和密封元件300之間的垂直距離太大,而增加蓋板200之形變量,所造成之顯示裝置10顯示畫面時在顯示區AA的邊緣及非顯示區NA產生牛頓環現象(Newton’s rings),有助於維持顯示品質。In the embodiment where the top surface of the sealing element 300 is lower than the top surface of the pixel defining layer 114 (see Figure 2C), the vertical distance dt2 between the top surface of the pixel defining layer 114 and the top surface of the sealing element 300 is less than 1.5 microns. For example, the vertical distance dt2 between the top surface of the pixel definition layer 114 and the top surface of the sealing material is 0.5 μm to 1.5 μm. Since each recess 400 contains each pseudo drop 500, the vertical distance between the cover 200 in the non-display area NA and the sealing element 300 is prevented from being too large, and the deformation of the cover 200 is increased, causing the display device 10 to display Newton's rings are generated at the edge of the display area AA and the non-display area NA during the screen, which helps to maintain the display quality.

畫素定義層114具有疏水性(hydrophobic)。舉例而言,畫素定義層114的材料為包括氟離子的高分子材料。於其他實施例中,畫素定義層114可藉由以半色調網點(halftone)製程,接著使用含氟離子的電漿將其疏水化所形成,且凹陷部400例如可透過黃光製程將畫素定義層114圖案化所形成。於本實施例中,凹陷部400位於畫素定義層114中,由於畫素定義層114具有疏水性,使得擬液滴500在凹陷部400中呈半球狀,舉例而言,擬液滴500相對於畫素定義層114的表面的接觸角大於50度,由於擬液滴500接觸畫素定義層114不會有散開的現象,有助於定義其噴塗的位置。於本實施例中,凹陷部400的深度小於畫素定義層114的厚度。舉例而言,凹陷部400的深度為0.1微米至1微米。The pixel definition layer 114 has hydrophobicity. For example, the material of the pixel definition layer 114 is a polymer material including fluoride ions. In other embodiments, the pixel definition layer 114 can be formed by a halftone process followed by a fluoride ion-containing plasma to hydrophobize it, and the recess 400 can be formed by, for example, a yellow light process. The pixel definition layer 114 is formed by patterning. In this embodiment, the recessed portion 400 is located in the pixel defining layer 114. Because the pixel defining layer 114 is hydrophobic, the pseudo-droplet 500 is hemispherical in the recessed portion 400. For example, the pseudo-droplet 500 is opposite to If the contact angle on the surface of the pixel definition layer 114 is greater than 50 degrees, since the pseudo-droplet 500 contacts the pixel definition layer 114 and will not spread out, it helps to define the spraying position. In this embodiment, the depth of the recess 400 is smaller than the thickness of the pixel definition layer 114. For example, the depth of the recess 400 is 0.1 μm to 1 μm.

於本實施例中,陣列基板100進一步包括擬畫素陣列128,擬畫素陣列128包括呈陣列排列的多個擬畫素P2。換言之,各擬畫素P2沿第一方向D1及第二方向D2排列。各擬畫素P2未連接至任何主動元件,因此擬畫素陣列128在顯示裝置10顯示畫面時不提供顯示的功能。擬畫素陣列128位於非顯示區NA,且位於凹陷部400及畫素陣列104之間。各擬畫素P2包括依序堆疊於陣列基板100的平坦層112上的電洞注入層118a、電洞傳輸層120a、發光層122a、電子傳輸層124a及第二電極126a。且各擬畫素P2的各層別可由噴墨塗佈所形成。In this embodiment, the array substrate 100 further includes a pseudo-pixel array 128, and the pseudo-pixel array 128 includes a plurality of pseudo-pixels P2 arranged in an array. In other words, the pseudo pixels P2 are arranged along the first direction D1 and the second direction D2. Each pseudo pixel P2 is not connected to any active element, so the pseudo pixel array 128 does not provide a display function when the display device 10 displays a frame. The pseudo-pixel array 128 is located in the non-display area NA and between the recess 400 and the pixel array 104. Each pseudo pixel P2 includes a hole injection layer 118a, a hole transport layer 120a, a light emitting layer 122a, an electron transport layer 124a, and a second electrode 126a sequentially stacked on the flat layer 112 of the array substrate 100. And each layer of each pseudo pixel P2 can be formed by inkjet coating.

如前所述,各發光單元OLED的電洞注入層118a、電洞傳輸層120a及發光層122a除了會由噴墨塗佈技術將各層材料的液滴分別噴塗至畫素定義層114的凹槽114a中,還會接著將各層材料進行乾燥處理使之固化,而液滴的材料包括有機材料及溶劑,溶劑用於使有機材料均勻分散且是具有揮發性的液體。進一步而言,請參考第1圖、第2A圖、第4圖及第5圖,第4圖是沿著方向1000噴塗用於形成電洞注入層118及電洞注入層118a的液滴DP1及用於形成擬液滴500的一部分5001的液滴DP2的剖面示意圖,第5圖是第4圖的此液滴DP1及液滴DP2被乾燥處理後形成電洞注入層118及電洞注入層118a及擬液滴500的一部分5001的剖面示意圖,乾燥處理使得液滴DP1、DP2的溶劑能揮發去除,並使有機材料固化成對應的電洞注入層118、電洞注入層118a及擬液滴500的一部分5001。由於擬畫素陣列128是位於非顯示區NA,可使顯示區AA的中心C1的發光單元OLED的各層與顯示區AA的邊緣的發光單元OLED的各層具有相同的乾燥環境而成膜均勻,進而避免了顯示裝置10出現亮度或色彩不均勻(mura)的情況。於本實施例中,擬畫素陣列128可環繞顯示區AA,且凹陷部400及擬液滴500環繞擬畫素陣列128。As mentioned above, the hole injection layer 118a, the hole transport layer 120a, and the light emitting layer 122a of each light emitting unit OLED are sprayed onto the grooves of the pixel definition layer 114 by inkjet coating technology. In 114a, each layer of material is then dried to solidify it, and the material of the droplet includes an organic material and a solvent. The solvent is used to uniformly disperse the organic material and is a volatile liquid. Further, please refer to Figure 1, Figure 2A, Figure 4 and Figure 5. Figure 4 is sprayed along the direction 1000 for forming the hole injection layer 118 and the hole injection layer 118a droplets DP1 and A schematic cross-sectional view of the droplet DP2 used to form a part 5001 of the pseudo droplet 500. FIG. 5 is the hole injection layer 118 and the hole injection layer 118a after the droplet DP1 and the droplet DP2 of FIG. 4 are dried. And a schematic cross-sectional view of a part 5001 of the pseudo-droplet 500. The drying process enables the solvent of the droplets DP1 and DP2 to be volatilized and removed, and the organic material is solidified into the corresponding hole injection layer 118, the hole injection layer 118a, and the pseudo-droplet 500 Part of 5001. Since the pseudo-pixel array 128 is located in the non-display area NA, each layer of the light-emitting unit OLED at the center C1 of the display area AA and each layer of the light-emitting unit OLED at the edge of the display area AA can have the same dry environment to form a uniform film, and then The display device 10 is prevented from being uneven in brightness or color (mura). In this embodiment, the pseudo-pixel array 128 can surround the display area AA, and the recess 400 and the pseudo-droplet 500 surround the pseudo-pixel array 128.

第6圖是擬液滴500及凹陷部400的俯視示意圖,請參照第6圖,擬液滴500具有底寬a,凹陷部400具有直徑b,已知噴墨塗佈技術具有噴塗精度公差c,凹陷部400的最小寬度大於擬液滴500和凹陷部400的接觸面的寬度,且底寬a、直徑b及噴塗精度公差c之間的關係滿足b>a+2c,藉此可確保擬液滴500不會溢出凹陷部400,提高噴塗擬液滴500於凹陷部400的良率。Figure 6 is a schematic top view of the pseudo-droplet 500 and the recessed portion 400. Please refer to Figure 6. The pseudo-droplet 500 has a bottom width a and the recessed portion 400 has a diameter b. The known inkjet coating technology has a spraying precision tolerance c. , The minimum width of the recessed portion 400 is greater than the width of the contact surface of the pseudo droplet 500 and the recessed portion 400, and the relationship between the bottom width a, the diameter b, and the spraying accuracy tolerance c meets b>a+2c, thereby ensuring that the pseudo droplet 500 The droplet 500 does not overflow the recess 400, and the yield of spraying the pseudo drop 500 on the recess 400 is improved.

第7圖是依照本發明另一實施例之顯示裝置10a的俯視示意圖,第8圖是沿著第7圖的剖線B1-B1’及剖線B2-B2’的剖面示意圖。第7圖及第8圖的顯示裝置10a與第1圖及第2A圖的顯示裝置10相似,兩者的至少一差異在於:在第7圖及第8圖的實施例中,凹陷部400a連續地環繞顯示區AA,以俯視觀之(如:面向第7圖的紙面),凹陷部400a為環形。FIG. 7 is a schematic top view of a display device 10a according to another embodiment of the present invention, and FIG. 8 is a schematic cross-sectional view taken along the section line B1-B1' and the section line B2-B2' of FIG. 7. The display device 10a of Figs. 7 and 8 is similar to the display device 10 of Fig. 1 and Fig. 2A. At least one difference between the two is: in the embodiment of Figs. 7 and 8, the recessed portion 400a is continuous The ground surrounds the display area AA, in a plan view (for example, facing the paper surface of FIG. 7), the recessed portion 400a is ring-shaped.

第7圖中繪示了三個互相間隔地排列的凹陷部400a,然本發明不以此為限,於其他實施例中,可根據擬液滴500的數量調整凹陷部400a的數量。在本實施例中,由於凹陷部400a連續地環繞顯示區AA,如此,可簡化形成凹陷部400a的黃光製程。此外,各凹陷部400a可容納多個擬液滴500,進一步在噴塗擬液滴500的製程上提升其製程容許度(process window)。FIG. 7 shows three recessed portions 400 a arranged at intervals, but the present invention is not limited to this. In other embodiments, the number of recessed portions 400 a can be adjusted according to the number of pseudo droplets 500. In this embodiment, since the recess 400a continuously surrounds the display area AA, the yellowing process for forming the recess 400a can be simplified. In addition, each recess 400a can accommodate a plurality of pseudo-droplets 500, which further improves the process window of the pseudo-droplet 500 spraying process.

第9圖是依照本發明另一實施例之顯示裝置10b的俯視示意圖,第10圖是沿著第9圖的剖線C-C’的剖面示意圖。第9圖及第10圖的顯示裝置10b與第7圖及第8圖的顯示裝置10a相似,兩者之間的至少一差異在於:在第9圖及第10圖的實施例中,顯示裝置10b只包括一個凹陷部400b,且各擬液滴500皆位於凹陷部400b中。FIG. 9 is a schematic top view of a display device 10b according to another embodiment of the present invention, and FIG. 10 is a schematic cross-sectional view taken along the line C-C' of FIG. 9. The display device 10b of FIGS. 9 and 10 is similar to the display device 10a of FIGS. 7 and 8. At least one difference between the two is: in the embodiments of FIGS. 9 and 10, the display device 10b includes only one recess 400b, and each pseudo-droplet 500 is located in the recess 400b.

第11圖是依照本發明另一實施例之顯示裝置10c的剖面示意圖,第11圖的顯示裝置10c與第2A圖的顯示裝置10相似,兩者之間的至少一差異在於:在第11圖的實施例中,平坦層112包括至少一溝槽600,且溝槽600位於非顯示區NA。FIG. 11 is a schematic cross-sectional view of a display device 10c according to another embodiment of the present invention. The display device 10c in FIG. 11 is similar to the display device 10 in FIG. 2A. At least one difference between the two is: in FIG. 11 In the embodiment of, the planarization layer 112 includes at least one trench 600, and the trench 600 is located in the non-display area NA.

於本實施例中,溝槽600例如可透過黃光製程將平坦層112圖案化所形成,由於平坦層112具有溝槽600,因此形成於其上方的畫素定義層114會部分地填入溝槽600中,使畫素定義層114中對應於溝槽600的位置形成凹陷部400c,溝槽600和凹陷部400c於垂直平坦層112的方向上相重疊,如此,增加了凹陷部400c的製程彈性。於其他實施例中,溝槽600亦可形成於平坦層112下方的任意一層中,例如緩衝層105、閘絕緣層106、層間絕緣層108及無機絕緣層110。於其他實施例中,在非顯示區NA的平坦層112底下的電路(未圖示)具有高低起伏的情況下,可藉由減少平坦層112的厚度,使平坦層112具有與此電路(未圖示)相同的表面形貌,以形成溝槽600,如此,可簡化形成溝槽600的製程。In this embodiment, the trench 600 can be formed by patterning the planarization layer 112 through a yellow light process. Since the planarization layer 112 has the trench 600, the pixel definition layer 114 formed thereon will partially fill the trench. In the trench 600, a recess 400c is formed in the pixel defining layer 114 at a position corresponding to the trench 600, and the trench 600 and the recess 400c overlap in the direction perpendicular to the flat layer 112, thus increasing the manufacturing process of the recess 400c elasticity. In other embodiments, the trench 600 can also be formed in any layer below the flat layer 112, such as the buffer layer 105, the gate insulating layer 106, the interlayer insulating layer 108, and the inorganic insulating layer 110. In other embodiments, when the circuit (not shown) under the flat layer 112 in the non-display area NA has ups and downs, the thickness of the flat layer 112 can be reduced, so that the flat layer 112 has the same circuit (not shown). (Illustration) The same surface topography is used to form the trench 600. In this way, the process of forming the trench 600 can be simplified.

第12圖是依照本發明另一實施例之顯示裝置10d的俯視示意圖,第13圖是沿著第12圖的剖線D-D’的剖面示意圖,第14圖是第12圖的區域R2的立體分解示意圖,為了方便說明,第14圖中僅繪示蓋板200、畫素定義層114、擬液滴500及凹陷部400d而省略繪示其他構件,第12圖至第14圖的顯示裝置10d與第2A圖的顯示裝置10相似,兩者的至少一差異在於:在第12圖至第13圖的實施例中,凹陷部400d是形成於蓋板200。舉例而言,凹陷部400d是位於蓋板200面對陣列基板100的一面,擬液滴500設置於蓋板200的凹陷部400d及畫素定義層114所構成的容置空間中。為了清楚表達圖式,第14圖中僅繪示蓋板200、凹陷部400d、畫素定義層114及擬液滴500。FIG. 12 is a schematic top view of a display device 10d according to another embodiment of the present invention, FIG. 13 is a schematic cross-sectional view taken along the line D-D' of FIG. 12, and FIG. 14 is a schematic view of the area R2 of FIG. 12 A three-dimensional exploded schematic view. For the convenience of description, only the cover 200, the pixel definition layer 114, the pseudo-droplet 500 and the recess 400d are shown in Figure 14, while other components are omitted. The display devices in Figures 12 to 14 are shown 10d is similar to the display device 10 of FIG. 2A, and at least one difference between the two is that in the embodiments of FIG. 12 to FIG. 13, the recess 400d is formed on the cover 200. For example, the recessed portion 400d is located on the side of the cover plate 200 facing the array substrate 100, and the pseudo-droplet 500 is disposed in the accommodating space formed by the recessed portion 400d of the cover plate 200 and the pixel definition layer 114. In order to clearly express the diagram, only the cover 200, the recessed portion 400d, the pixel definition layer 114 and the pseudo-droplet 500 are shown in FIG. 14.

於本實施例中,由於蓋板200的凹陷部400d可容置擬液滴500,使得蓋板200不會被擬液滴500墊高,避免蓋板200在非顯示區NA和密封元件300之間的垂直距離太大,而增加蓋板200之形變量,使蓋板200表面不平整或凸起,所造成之顯示裝置10顯示畫面時在顯示區AA的邊緣及非顯示區NA產生牛頓環現象(Newton’s rings),有助於維持顯示品質。凹陷部400d的深度大於擬液滴500的厚度。於本實施例中,擬液滴500的高度為0.1微米至2微米。密封元件300的厚度為1微米至5微米。畫素定義層114的厚度為0.5微米至5微米。平坦層112的厚度為1微米至10微米。畫素定義層114與密封元件300之間的水平距離為0.5毫米至5毫米。在本實施例中,自剖視觀之,示意性地以矩形代表凹陷部400d的形狀,但本發明不限於此,根據其它實施例,凹陷部400d也可以是其它形狀。於本實施例中,凹陷部400d的垂直深度為0.5微米至3微米。In this embodiment, since the recess 400d of the cover plate 200 can accommodate the pseudo droplet 500, the cover plate 200 will not be raised by the pseudo droplet 500, which prevents the cover plate 200 from being placed between the non-display area NA and the sealing element 300. The vertical distance between the two is too large, and the deformation of the cover 200 is increased, and the surface of the cover 200 is uneven or raised. As a result, when the display device 10 displays a picture, a Newton ring is generated at the edge of the display area AA and the non-display area NA. The phenomenon (Newton's rings) helps maintain the display quality. The depth of the recess 400 d is greater than the thickness of the pseudo drop 500. In this embodiment, the height of the pseudo-droplet 500 is 0.1 μm to 2 μm. The thickness of the sealing element 300 is 1 micrometer to 5 micrometers. The pixel definition layer 114 has a thickness of 0.5 μm to 5 μm. The thickness of the flat layer 112 is 1 micrometer to 10 micrometers. The horizontal distance between the pixel definition layer 114 and the sealing element 300 is 0.5 mm to 5 mm. In this embodiment, from a cross-sectional view, the shape of the recessed portion 400d is schematically represented by a rectangle, but the present invention is not limited to this. According to other embodiments, the recessed portion 400d may also have other shapes. In this embodiment, the vertical depth of the recess 400d is 0.5 μm to 3 μm.

第15圖是依照本發明另一實施例之顯示裝置10e的俯視示意圖,第16圖是第15圖的區域R3的立體分解示意圖,為了方便說明,第16圖中僅繪示蓋板200、畫素定義層114、擬液滴500及凹陷部400e而省略繪示其他構件。請一併參照第15圖及第16圖,第15圖至第16圖的顯示裝置10e與第12圖的顯示裝置10d相似,兩者的至少一差異在於:在第15圖及第16圖的實施例中,凹陷部400e連續地環繞顯示區AA,任兩相鄰擬液滴500互相接觸或互相部分地重疊。Figure 15 is a schematic top view of a display device 10e according to another embodiment of the present invention. Figure 16 is a perspective exploded schematic view of the area R3 in Figure 15. For the convenience of description, only the cover 200 and the picture are shown in Figure 16. The element definition layer 114, the pseudo-droplet 500 and the recess 400e are omitted and other components are omitted. Please refer to FIGS. 15 and 16. The display device 10e in FIG. 15 to FIG. 16 is similar to the display device 10d in FIG. 12. At least one difference between the two is: In an embodiment, the recess 400e continuously surrounds the display area AA, and any two adjacent pseudo-droplets 500 contact each other or partially overlap each other.

於本實施例中,由於凹陷部400e連續地環繞顯示區AA,以俯視觀之(如:面向第15圖的紙面),凹陷部400e為環形。因此使凹陷部400e可容納的擬液滴500的數量增加,擬液滴500可共同形成一個連續的圖案,如此,擬液滴500所產生的蒸汽足夠大可以使顯示區AA的中心C1的畫素P1之發光單元(未示)與顯示區AA的邊緣的畫素P1之發光單元(未示)具有相同的乾燥環境而成膜均勻,進而避免了顯示裝置10出現亮度或色彩不均勻(mura)的情況。In this embodiment, since the recessed portion 400e continuously surrounds the display area AA, in a plan view (for example, facing the paper surface of FIG. 15), the recessed portion 400e has a ring shape. Therefore, the number of pseudo-droplets 500 that can be accommodated in the recessed portion 400e is increased, and the pseudo-droplets 500 can form a continuous pattern together. In this way, the vapor generated by the pseudo-droplets 500 is large enough to draw the center C1 of the display area AA. The light-emitting unit (not shown) of the pixel P1 and the light-emitting unit (not shown) of the pixel P1 at the edge of the display area AA have the same dry environment to form a uniform film, thereby preventing the display device 10 from having uneven brightness or color (mura )Case.

綜上所述,在本發明的實施例的顯示裝置中,凹陷部位於非顯示區。凹陷部至少形成於陣列基板及蓋板其中之一,且擬液滴位於凹陷部中。藉此蓋板與擬液滴相隔開,使得蓋板不會被擬液滴墊高,避免蓋板在非顯示區和密封元件之間的垂直距離太大,而增加蓋板之形變量,使蓋板表面不平整或凸起,所造成之顯示裝置顯示畫面時在顯示區的邊緣及非顯示區產生牛頓環現象(Newton’s rings),有助於維持顯示品質。In summary, in the display device of the embodiment of the present invention, the recessed portion is located in the non-display area. The recess is formed on at least one of the array substrate and the cover plate, and the pseudo drop is located in the recess. As a result, the cover plate is separated from the pseudo droplets, so that the cover plate will not be raised by the pseudo droplets, and the vertical distance between the cover plate in the non-display area and the sealing element is prevented from being too large, and the deformation of the cover plate is increased, so that The surface of the cover plate is not flat or raised, which causes Newton's rings to occur at the edge of the display area and the non-display area when the display device displays images, which helps to maintain the display quality.

10,10a,10b,10c,10d:顯示裝置 10e:顯示裝置 100:陣列基板 102:基板 104:畫素陣列 105:緩衝層 106:閘絕緣層 108:層間絕緣層 110:無機絕緣層 112:平坦層 114:畫素定義層 114a:凹槽 116:第一電極 118,118a:電洞注入層 120,120a:電洞傳輸層 122,122a:發光層 124,124a:電子傳輸層 126,126a:第二電極 128:擬畫素陣列 200:蓋板 300:密封元件 400,400a,400b,400d:凹陷部 400e:凹陷部 500:擬液滴 5001:一部分 600:溝槽 1000:方向 a:底寬 b:直徑 c:噴塗精度公差 A-A’:剖線 AA:顯示區 B1-B1’:剖線 B2-B2’:剖線 C-C’:剖線 C1:中心 CS:電容器 CH:通道區 CUT:切割線 D:汲極 dt1:距離 dt2:垂直距離 D1:第一方向 D2:第二方向 DL:資料線 DP1:液滴 DP2:液滴 DR:汲極區 E-E’:剖線 G:閘極 LDR:輕摻雜汲極區 LSR:輕摻雜源極區 NA:非顯示區 OLED:發光單元 P1:畫素 P2:擬畫素 PL:電源線 R1:區域 R2:區域 R3:區域 S:源極 SC:半導體圖案 SL:掃描線 SR:源極區 T1:主動元件 T2:主動元件 10, 10a, 10b, 10c, 10d: display device 10e: display device 100: Array substrate 102: substrate 104: pixel array 105: buffer layer 106: gate insulation 108: Interlayer insulation layer 110: Inorganic insulating layer 112: Flat layer 114: Pixel Definition Layer 114a: groove 116: first electrode 118, 118a: hole injection layer 120, 120a: hole transport layer 122, 122a: luminescent layer 124, 124a: electron transport layer 126, 126a: second electrode 128: pseudo pixel array 200: cover 300: sealing element 400, 400a, 400b, 400d: Depressed part 400e: Depressed part 500: pseudo drop 5001: part 600: groove 1000: direction a: bottom width b: diameter c: Spraying accuracy tolerance A-A’: Sectional line AA: Display area B1-B1’: cut line B2-B2’: Cut line C-C’: Cut line C1: Center CS: Capacitor CH: Channel area CUT: cutting line D: Dip pole dt1: distance dt2: vertical distance D1: First direction D2: second direction DL: Data line DP1: droplet DP2: droplet DR: Drain region E-E’: Cut line G: Gate LDR: Lightly doped drain region LSR: Lightly doped source region NA: non-display area OLED: light emitting unit P1: pixel P2: pseudo pixel PL: Power cord R1: area R2: area R3: area S: source SC: Semiconductor pattern SL: scan line SR: Source region T1: Active component T2: Active component

閱讀以下詳細敘述並搭配對應之圖式,可了解本揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 第1圖是依照本發明一實施例之顯示裝置的俯視示意圖。 第2A圖是沿著第1圖的剖線A-A’的剖面示意圖。 第2B圖是第2A圖的區域R1的放大示意圖。 第2C圖是依照本發明另一實施例之顯示裝置的剖面示意圖。 第3圖是第1圖的畫素的等效電路示意圖。 第4圖是噴塗用於形成電洞注入層的液滴的剖面示意圖。 第5圖是第4圖的此液滴被乾燥處理後形成電洞注入層的剖面示意圖。 第6圖是擬液滴及凹陷部的俯視示意圖。 第7圖是依照本發明另一實施例之顯示裝置的俯視示意圖。 第8圖是沿著第7圖的剖線B1-B1’及剖線B2-B2’的剖面示意圖。 第9圖是依照本發明另一實施例之顯示裝置的俯視示意圖。 第10圖是沿著第9圖的剖線C-C’的剖面示意圖。 11圖是依照本發明另一實施例之顯示裝置的剖面示意圖。 第12圖是依照本發明另一實施例之顯示裝置的俯視示意圖。 第13圖是沿著第12圖的剖線D-D’的剖面示意圖。 第14圖是顯示裝置的區域R2的立體分解示意圖。 第15圖是依照本發明另一實施例之顯示裝置的俯視示意圖。 第16圖是第15圖的區域R3的立體分解示意圖。 Read the following detailed description and match the corresponding diagrams to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the features can be increased or decreased arbitrarily to facilitate the clarity of the discussion. FIG. 1 is a schematic top view of a display device according to an embodiment of the invention. Fig. 2A is a schematic cross-sectional view taken along the section line A-A' of Fig. 1. FIG. 2B is an enlarged schematic diagram of the area R1 in FIG. 2A. FIG. 2C is a schematic cross-sectional view of a display device according to another embodiment of the invention. Fig. 3 is a schematic diagram of the equivalent circuit of the pixel in Fig. 1. Figure 4 is a schematic cross-sectional view of spraying droplets for forming a hole injection layer. Fig. 5 is a schematic cross-sectional view of the hole injection layer formed by the liquid droplet in Fig. 4 after being dried. Figure 6 is a schematic top view of the pseudo-droplet and the depressed portion. FIG. 7 is a schematic top view of a display device according to another embodiment of the invention. Fig. 8 is a schematic cross-sectional view taken along the line B1-B1' and the line B2-B2' of Fig. 7. FIG. 9 is a schematic top view of a display device according to another embodiment of the invention. Fig. 10 is a schematic cross-sectional view taken along the section line C-C' of Fig. 9. 11 is a schematic cross-sectional view of a display device according to another embodiment of the invention. FIG. 12 is a schematic top view of a display device according to another embodiment of the invention. Fig. 13 is a schematic cross-sectional view taken along the line D-D' of Fig. 12; Fig. 14 is a perspective exploded schematic view of the region R2 of the display device. FIG. 15 is a schematic top view of a display device according to another embodiment of the invention. Fig. 16 is a perspective exploded schematic view of area R3 in Fig. 15.

國內寄存資訊(請依寄存機構、日期、號碼順序註記) 無 國外寄存資訊(請依寄存國家、機構、日期、號碼順序註記) 無 Domestic deposit information (please note in the order of deposit institution, date and number) no Foreign hosting information (please note in the order of hosting country, institution, date, and number) no

10:顯示裝置 10: Display device

100:陣列基板 100: Array substrate

102:基板 102: substrate

105:緩衝層 105: buffer layer

106:閘絕緣層 106: gate insulation

108:層間絕緣層 108: Interlayer insulation layer

110:無機絕緣層 110: Inorganic insulating layer

112:平坦層 112: Flat layer

114:畫素定義層 114: Pixel Definition Layer

114a:凹槽 114a: groove

116:第一電極 116: first electrode

118,118a:電洞注入層 118, 118a: hole injection layer

120,120a:電洞傳輸層 120, 120a: hole transport layer

122,122a:發光層 122, 122a: luminescent layer

124,124a:電子傳輸層 124, 124a: electron transport layer

126,126a:第二電極 126, 126a: second electrode

200:蓋板 200: cover

300:密封元件 300: sealing element

400:凹陷部 400: Depressed part

500:擬液滴 500: pseudo drop

A-A’:剖線 A-A’: Sectional line

AA:顯示區 AA: Display area

CH:通道區 CH: Channel area

CUT:切割線 CUT: cutting line

D:汲極 D: Dip pole

dt1:距離 dt1: distance

DR:汲極區 DR: Drain region

G:閘極 G: Gate

LDR:輕摻雜汲極區 LDR: Lightly doped drain region

LSR:輕摻雜源極區 LSR: Lightly doped source region

NA:非顯示區 NA: non-display area

OLED:發光單元 OLED: light emitting unit

P1:畫素 P1: pixel

P2:擬畫素 P2: pseudo pixel

S:源極 S: source

SC:半導體圖案 SC: Semiconductor pattern

SR:源極區 SR: Source region

T1:主動元件 T1: Active component

R1:區域 R1: area

Claims (10)

一種顯示裝置,具有一顯示區及一非顯示區,且包含:一陣列基板,包含一基板、一畫素陣列及一畫素定義層,其中該畫素陣列位於該基板上,該畫素定義層位於該基板上且具有疏水性;一蓋板,設置於該陣列基板上;一密封元件,用以接合該陣列基板及該蓋板,且位於該非顯示區;一凹陷部,位於該非顯示區,其中該凹陷部至少形成於該陣列基板及該蓋板其中之一,該凹陷部的深度大於或等於該擬液滴的厚度;以及至少一擬液滴,位於該凹陷部中且接觸該畫素定義層的一疏水面。 A display device has a display area and a non-display area, and includes: an array substrate, including a substrate, a pixel array, and a pixel definition layer, wherein the pixel array is located on the substrate and the pixel definition The layer is located on the substrate and has hydrophobicity; a cover plate is arranged on the array substrate; a sealing element is used to join the array substrate and the cover plate and is located in the non-display area; a recess is located in the non-display area , Wherein the recessed portion is formed at least on one of the array substrate and the cover plate, the depth of the recessed portion is greater than or equal to the thickness of the pseudo drop; and at least one pseudo drop is located in the recess and contacts the painting The element defines a hydrophobic surface of the layer. 如請求項1所述之顯示裝置,其中該凹陷部位於該畫素定義層中。 The display device according to claim 1, wherein the recessed portion is located in the pixel definition layer. 如請求項2所述之顯示裝置,其中該陣列基板進一步包含:至少一平坦層,配置於該基板及該畫素定義層之間,其中該平坦層包含至少一溝槽,且該溝槽和該凹陷部於垂直該平坦層的方向上相重疊。 The display device according to claim 2, wherein the array substrate further includes: at least one flat layer disposed between the substrate and the pixel definition layer, wherein the flat layer includes at least one groove, and the groove and The recesses overlap in a direction perpendicular to the flat layer. 如請求項3所述之顯示裝置,其中該畫素定義層部分地填入該溝槽中。 The display device according to claim 3, wherein the pixel definition layer is partially filled in the groove. 如請求項2所述之顯示裝置,其中該擬液滴相對於該畫素定義層的表面的接觸角大於50度。 The display device according to claim 2, wherein the contact angle of the pseudo-droplet with respect to the surface of the pixel definition layer is greater than 50 degrees. 如請求項1所述之顯示裝置,其中該陣列基板進一步包含:一擬畫素陣列,位於該非顯示區,其中該擬畫素陣列環繞該顯示區且位於該凹陷部及該畫素陣列之間。 The display device of claim 1, wherein the array substrate further comprises: a pseudo-pixel array located in the non-display area, wherein the pseudo-pixel array surrounds the display area and is located between the recessed portion and the pixel array . 如請求項1所述之顯示裝置,其中該凹陷部連續地環繞該顯示區。 The display device according to claim 1, wherein the recessed portion continuously surrounds the display area. 如請求項1所述之顯示裝置,其中該凹陷部的深度小於該畫素定義層的厚度。 The display device according to claim 1, wherein the depth of the recessed portion is less than the thickness of the pixel definition layer. 如請求項1所述之顯示裝置,其中該凹陷部的最小寬度大於該擬液滴和該凹陷部的接觸面的寬度。 The display device according to claim 1, wherein the minimum width of the recessed portion is greater than the width of the contact surface between the pseudo-droplet and the recessed portion. 如請求項1所述之顯示裝置,其中該擬液滴的材料包含由下列各者所構成的族群中選出的一層、兩層或多於兩層的有機材料層:電洞注入層、電洞傳輸層及發光層。 The display device according to claim 1, wherein the material of the pseudo-droplet includes one, two or more than two organic material layers selected from the group consisting of: hole injection layer, hole Transmission layer and light-emitting layer.
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