TWI720773B - Low-input impedance current-mode sample and hold circuit and 2-1 mash delta-sigma modulator - Google Patents
Low-input impedance current-mode sample and hold circuit and 2-1 mash delta-sigma modulator Download PDFInfo
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本發明係有關於一種類比數位轉換器的電流開關回授記憶模組,特別是指一種三角積分類比數位轉換器的電流開關回授記憶模組。The present invention relates to a current switch feedback memory module of an analog-to-digital converter, in particular to a current switch feedback memory module of a delta-sigma analog-to-digital converter.
類比數位轉換器(Analog-to-digital converter, ADC)是用於將類比形式的連續訊號轉換為數位形式的離散訊號的一種元件,目前常見的類比數位轉換器包括積分型、逐次逼近型(SAR)、並行比較型/串並行型、電容陣列逐次比較型、及三角積分類比數位轉換器(Delta-Sigma Modulation, DSM)等。其中,三角積分類比數位轉換器(Delta-Sigma Modulation, DSM)是一種相當廣泛使用的過取樣類比數位轉換器,應用於各種消費類電子產品,如高解析度之數據轉換器、DC-DC轉換器、無線傳感器網絡和電機控制器等。Analog-to-digital converter (ADC) is a component used to convert continuous signals in analog form into discrete signals in digital form. The current common analog-to-digital converters include integral, successive approximation (SAR) ), parallel comparison type/serial parallel type, capacitor array successive comparison type, and delta-sigma analog-to-digital converter (Delta-Sigma Modulation, DSM), etc. Among them, the delta-sigma analog-to-digital converter (Delta-Sigma Modulation, DSM) is a widely used over-sampling analog-to-digital converter, which is used in various consumer electronic products, such as high-resolution data converters, DC-DC conversion Controllers, wireless sensor networks, motor controllers, etc.
高階三角積分類比數位轉換器可以通過單環或級聯架構獲得,通常稱為MASH架構的級聯架構是採用低階架構來完成高階高效能且穩定性高的最佳架構。影響MASH架構效能最重要的因素之一是因為電路元件不匹配的問題,影響到其效能,因為它們對製程、電壓和溫度變化相當敏感。為了克服不匹配問題,仔細的設計和佈局對於模擬電路至關重要。The high-order delta-sigma analog-to-digital converter can be obtained through a single-loop or cascaded architecture. The cascaded architecture commonly referred to as the MASH architecture is the best architecture that uses a low-end architecture to achieve high-end, high-efficiency and high stability. One of the most important factors affecting the performance of the MASH architecture is the mismatch of circuit components, which affects its performance because they are very sensitive to process, voltage, and temperature changes. In order to overcome the mismatch problem, careful design and layout are essential for analog circuits.
其中,資料取樣/保持(Sample & Hold)電路在類比數位轉換器中扮演著相當重要的角色,目前主要的取樣技術包括切換電容式(SC)以及切換電流式(SI)兩種。切換電容式(SC)主要是利用電容來記憶資料達到取樣功能,切換電流式(SI)則是利用MOSFET的閘-源極間之寄生電容(Cgs)記憶資料;與切換電容式相比,切換電流式由於其高速、低電源電壓和小晶片面積而更具有吸引力。然而,切換電流式具有傳輸誤差、脈衝穿透效應、非線性等缺失。基於上述的缺失,現有技術已經開發了不同的技術來改善開關電流電路的上述缺點,通過使用最小取樣取樣開關來最優化脈衝穿透效應,在回授記憶單元(FMC)的幫助下可以改善傳輸誤差,輸入阻抗減少了兩倍;共模電路(CMFF)的設計則消除了偏移電流,從而解決了非線性的問題。Among them, the data sampling/holding (Sample & Hold) circuit plays a very important role in the analog-to-digital converter. At present, the main sampling techniques include switched capacitive (SC) and switched current (SI). Switched capacitive type (SC) mainly uses capacitors to store data to achieve the sampling function, and switched current type (SI) uses parasitic capacitance (Cgs) between the gate and source of MOSFET to memorize data; compared with switched capacitive type, switching The current type is more attractive due to its high speed, low power supply voltage and small chip area. However, the switching current mode has defects such as transmission error, pulse penetration effect, and non-linearity. Based on the above-mentioned deficiencies, the prior art has developed different technologies to improve the above-mentioned shortcomings of the switching current circuit. By using the minimum sampling sampling switch to optimize the pulse penetration effect, the transmission can be improved with the help of the feedback memory cell (FMC). Error, the input impedance is reduced by two times; the design of the common mode circuit (CMFF) eliminates the offset current, thereby solving the problem of non-linearity.
上述切換電流式的回授記憶單元,儘管已經具有低輸入阻抗和較小的傳輸誤差,但仍受限於不匹配之製程參數變異、電路架構之傳輸誤差、以及MOS做為開關與記憶元件間之脈衝穿透效應、以及主動元件本身固有之雜訊等非理想效應的影響,而尚待有可改善的空間。Although the above-mentioned switching current feedback memory unit has low input impedance and small transmission error, it is still limited by the mismatched process parameter variation, the transmission error of the circuit structure, and the MOS as the switch and the memory element. There is still room for improvement due to non-ideal effects such as the pulse penetration effect and the inherent noise of the active component itself.
本發明的主要目的,在於提供一種低輸入阻抗式電流取樣保持電路模組,配合三角積分類比數位轉換器的積分器設置。該低輸入阻抗式電流取樣保持電路模組包括共模前饋電路、一連接至該共模前饋電路第一差動輸入端的第一電流開關回授記憶電路、以及一連接至該共模前饋電路第二差動輸入端的第二電流開關回授記憶電路。該第一電流開關回授記憶電路由第一時脈訊號切換連接至該第一差動輸入端的第一開關,該第二電流開關回授記憶電路由第二時脈訊號切換連接至該第二差動輸入端的第二開關。其中,該第一電流開關回授記憶電路及該第二電流開關回授記憶電路分別包括一參考電流電路、一對應於該參考電流電路的匹配電流電路、以及一設置於該參考電流電路以及匹配電流電路之間的運算放大器,藉由該運算放大器降低該參考電流電路的輸入阻抗。The main purpose of the present invention is to provide a low-input impedance current sample-and-hold circuit module, which is equipped with the integrator of the delta-sigma analog-to-digital converter. The low input impedance current sample-and-hold circuit module includes a common mode feedforward circuit, a first current switch feedback memory circuit connected to the first differential input terminal of the common mode feedforward circuit, and a first current switch feedback memory circuit connected to the common mode front The second current switch at the second differential input terminal of the feed circuit feeds back the memory circuit. The first current switch feedback memory circuit is connected to the first switch of the first differential input terminal by a first clock signal, and the second current switch feedback memory circuit is connected to the second switch by a second clock signal. The second switch of the differential input. Wherein, the first current switch feedback memory circuit and the second current switch feedback memory circuit respectively include a reference current circuit, a matching current circuit corresponding to the reference current circuit, and a matching current circuit arranged on the reference current circuit and matching The operational amplifier between the current circuits uses the operational amplifier to reduce the input impedance of the reference current circuit.
本發明的另一目的,在於提供一種二加一階三角積分類比數位轉換器,包括一數位訊號調變器、以及一數位雜訊消除電路。該數位訊號調變器包括一接收外部輸入訊號的第一級調變器、以及一輸入端連接至該第一級調變器的第二級調變器,該第一級調變器包括積分器、數位類比轉換器以及第一量化器以輸出一第一量化取樣訊號,該第二級調變器包括積分器、數位類比轉換器以及第二量化器用以輸出一第二量化取樣訊號,其中該積分器包括一低輸入阻抗式電流取樣保持電路模組,該低輸入阻抗式電流取樣保持電路模組包括共模前饋電路、一連接至該共模前饋電路第一差動輸入端的第一電流開關回授記憶電路、以及一連接至該共模前饋電路第二差動輸入端的第二電流開關回授記憶電路,該第一電流開關回授記憶電路由第一時脈訊號切換連接至該第一差動輸入端的第一開關,該第二電流開關回授記憶電路由第二時脈訊號切換連接至該第二差動輸入端的第二開關,其中,該第一電流開關回授記憶電路及該第二電流開關回授記憶電路分別包括一參考電流電路、一對應於該參考電流電路的匹配電流電路、以及一設置於該參考電流電路以及匹配電流電路之間的運算放大器,藉由該運算放大器降低該參考電流電路的輸入阻抗。該數位雜訊消除電路包括一第一輸入端、一第二輸入端、以及一輸出端,該第一輸入端用以接收該第一量化取樣訊號,該第二輸入端用以接收該第二量化取樣訊號,該輸出端的輸出訊號與該第一量化取樣訊號及該第二量化取樣訊號之間符合以下的關係式: ;其中, 為輸出端的輸出訊號, 為該第一輸入端的第一量化取樣訊號, 為該第二輸入端的第二量化取樣訊號。 Another object of the present invention is to provide a two-plus-one-order delta-sigma analog-to-digital converter, which includes a digital signal modulator and a digital noise elimination circuit. The digital signal modulator includes a first-stage modulator that receives an external input signal, and a second-stage modulator whose input is connected to the first-stage modulator. The first-stage modulator includes an integral Quantizer, digital-analog converter, and first quantizer to output a first quantized sample signal. The second-stage modulator includes an integrator, a digital-analog converter, and a second quantizer for outputting a second quantized sample signal, wherein The integrator includes a low-input impedance current sample-and-hold circuit module, the low-input impedance current sample-and-hold circuit module includes a common-mode feedforward circuit, and a first differential input terminal connected to the common-mode feedforward circuit. A current switch feedback memory circuit, and a second current switch feedback memory circuit connected to the second differential input terminal of the common mode feedforward circuit, the first current switch feedback memory circuit is switched and connected by the first clock signal To the first switch of the first differential input terminal, the second current switch feedback memory circuit is connected to the second switch of the second differential input terminal by a second clock signal, wherein the first current switch feedback The memory circuit and the second current switch feedback memory circuit respectively include a reference current circuit, a matching current circuit corresponding to the reference current circuit, and an operational amplifier disposed between the reference current circuit and the matching current circuit, by The operational amplifier reduces the input impedance of the reference current circuit. The digital noise canceling circuit includes a first input terminal, a second input terminal, and an output terminal. The first input terminal is used to receive the first quantized sample signal, and the second input terminal is used to receive the second For the quantized sample signal, the output signal of the output terminal and the first quantized sample signal and the second quantized sample signal conform to the following relationship: ;among them, Is the output signal of the output terminal, Is the first quantized sample signal of the first input terminal, Is the second quantized sample signal of the second input terminal.
是以,本發明相較於已知技術具有以下的優勢功效:Therefore, compared with the known technology, the present invention has the following advantages:
1. 本發明與傳統的回授記憶單元(Feedback Memory Cell)相比,可以更大幅地降低輸入阻抗,藉此減少傳輸誤差。1. Compared with the traditional feedback memory cell (Feedback Memory Cell), the present invention can greatly reduce the input impedance, thereby reducing the transmission error.
2. 本發明通過改進的回授記憶電路(FMC)配合差分交錯連接的共模電路,修正並加速了響應電路並帶來穩定的輸出電流。2. The present invention revises and accelerates the response circuit and brings a stable output current through an improved feedback memory circuit (FMC) with a differential interleaved common mode circuit.
有關本發明之詳細說明及技術內容,現就配合圖式說明如下。再者,本發明中之圖式,為說明方便,其比例未必照實際比例繪製,該等圖式及其比例並非用以限制本發明之範圍,在此先行敘明。The detailed description and technical content of the present invention will now be described in conjunction with the drawings as follows. Furthermore, the figures in the present invention are not necessarily drawn according to actual proportions for the convenience of description, and these figures and their proportions are not used to limit the scope of the present invention, and are described here first.
本發明主要是揭示一種用於三階(二加一階)多級雜訊頻移(Multi-Stage Noise Shaping, MASH)三角積分調變器的取樣保持電路模組100。在本發明所舉出的具體實施態樣中,最終使用的回授記憶電路可以將輸入阻抗減小(1+A)倍,大大優於傳統回授記憶電路僅能將輸入阻抗減少2倍的效果,藉此本發明所採用的回授記憶電路相較於習知回授記憶電路可以提高傳輸速度及精確度達到降低傳輸誤差的效果。此外,透過交錯連接的共模前饋電路(CMFF)則可以更進一步提高共模電位的穩定性,藉此快速回應電路位準並帶來穩定的輸出電流。最終所提出的數位雜訊消除電路可以降低最後一級的高階量化雜訊,同時消除了來自調變器早期階段的低階量化雜訊。The present invention mainly discloses a sample-and-
有關於本發明的具體實施方式,以下請配合參閱「圖1」及「圖2」,係揭示本發明中三角積分類比數位轉換器的方塊示意圖、以及積分器的方塊示意圖,如圖所示:Regarding the specific implementation of the present invention, please refer to "FIG. 1" and "FIG. 2" below to disclose the block diagram of the delta-sigma analog-to-digital converter and the block diagram of the integrator in the present invention, as shown in the figure:
「圖1」所示為具有數位雜訊消除電路(Digital Noise Cancellation Circuit, DNCC)的三角積分類比數位轉換器100的方塊圖,所提出的三角積分類比數位轉換器100包括數位訊號調變器10(Digital Signal Modulator, DSM)以及後端的數位雜訊消除電路20(Digital Noise Cancellation Circuit, DNCC)。該數位訊號調變器10包括第一級調變器11和第二級調變器12。如圖1所示,三角積分類比數位轉換器100的模擬係數列於下表1中。
表1、四階多級雜訊頻移三角積分調變器的模擬係數
數位訊號調變器10的主要組成包括積分器、1位元量化器、數位-類比轉換器(Digital-Analog Converter, DAC)和非重疊時脈產生器。整體數位訊號調變器10的性能是由兩個級聯積分器(第一級調變器11和第二級調變器12)決定。每一級調變器由兩個積分器D1、D2(積分器D3、D4)組成,並由第一取樣保持電路SH1和第二取樣保持電路SH2建立一個積分器,又稱為延遲單元(Z
-1)。非重疊時脈產生器係用於控制取樣保持電路中開關(
、
)的操作,如「圖2」所示。
The main components of the
具體而言,該數位訊號調變器10主要包括四個積分器(第一積分器D1、第二積分器D2、第三積分器D3、第四積分器D4)、四個數位類比轉換器(第一數位類比轉換器b
1、第二數位類比轉換器b
2、第三數位類比轉換器b
3、第四數位類比轉換器b
4)、兩個1位元量化器(第一量化器Q1、第二量化器Q2)、四個係數調整器(第一係數調整器a
1、第二係數調整器a
2、第三係數調整器a
3、第四係數調整器a
4)、一重疊時脈產生器(圖略)、以及一偏壓電流產生器(圖略)。於數位訊號調變器10中,第一積分器D1用以接收一外部輸入訊號IN與第一數位類比轉換器b
1之輸出訊號的相減值,經由第一係數調整器a
1產生第一輸出訊號;該第一輸出訊號會與第二數位類比轉換器b
2的輸出訊號相減,並將相減後的結果送給第二積分器D2,再由第二積分器D2經由第二係數調整器a
2後產生第二輸出訊號;接著,該第二輸出訊號輸出至第一量化器Q1;另,由第一量化器Q1的輸出端所產生的第三輸出訊號會被連接到第一數位類比轉換器b
1與第二數位類比轉換器b
2的輸入端,以及數位消除電路20的第一接收端21,並分別由第一數位類比轉換器b
1將輸出訊號回授至第一積分器D1、第二數位類比轉換器b
2會將輸出訊號回授至第二積分器D2;以上為第一級調變器11的架構。
Specifically, the
同時,該第二輸出訊號也會與第三數位類比轉換器b
3的輸出訊號相減,並將相減結果送給該第三積分器D3,再由第三積分器D3經由第三係數調整器a
3產生第四輸出訊號;該第四輸出訊號會與第四數位類比轉換器b
4的輸出訊號相減,並將相減後的結果送給第四積分器D4,再由第四積分器D4經由第四係數調整器a
4後產生第五輸出訊號;再者,由該第四積分器D4所產生的第五輸出訊號被連接到第二量化器Q2的輸入端,經由第二量化器Q2來產生第六輸出訊號;該第六輸出訊號同時被連接至第三數位類比轉換器b
3與第四數位類比轉換器b
4的輸入端與數位消除電路20的第二接收端22,且由該第三數位類比轉換器b
3及該第四數位類比轉換器b
4將輸出訊號回授至第三積分器D3以及第四積分器D4。
Meanwhile, the second output signal will be subtracted from the third digital to analog converter output signal b 3, and the subtraction result to the third integrator D3, and then adjusted by the third integrator via a third coefficient D3 A 3 generates a fourth output signal; the fourth output signal is subtracted from the output signal of the fourth digital-to-analog converter b 4 , and the subtracted result is sent to the fourth integrator D4, which is then integrated by the fourth The fifth output signal generated by the fourth integrator D4 is connected to the input terminal of the second quantizer Q2 through the fourth coefficient adjuster a 4 and the fifth output signal generated by the fourth integrator D4 is connected to the input terminal of the second quantizer Q2 through the second quantization. Q2 is generating a sixth output signal; the sixth output signal are simultaneously connected to a third digital to analog converter b 3 and fourth digital to analog converter input digit b 4 and a second receiving
有關於切換電流式延遲單元的方塊圖,請參閱「圖2」,主要是藉由兩個第一取樣保持電路SH1、第二取樣保持電路SH2、以及兩個非重疊時脈( 與 )來實現一切換電流式延遲單元D,以降低輸入阻抗同時減小傳輸誤差。 For the block diagram of the switching current type delay unit, please refer to "Figure 2". It is mainly composed of two first sample-and-hold circuits SH1, second sample-and-hold circuit SH2, and two non-overlapping clocks versus ) To implement a switching current-type delay unit D to reduce the input impedance while reducing the transmission error.
有關於電流取樣保持電路模組(SH1、SH2)的架構,以下請一併配合參閱「圖3」、「圖4」及「圖5」,係揭示本發明電流取樣保持電路模組的電路示意圖(一)、電路示意圖(二)、以及等效電路示意圖,如圖所示:Regarding the structure of the current sample-and-hold circuit module (SH1, SH2), please refer to "Figure 3", "Figure 4" and "Figure 5" together below to disclose the circuit diagram of the current sample-and-hold circuit module of the present invention. (1), the schematic diagram of the circuit (2), and the schematic diagram of the equivalent circuit, as shown in the figure:
於本實施態樣中,該電流取樣保持電路模組SH主要包括共模前饋電路CMF、一連接至該共模前饋電路CMF第一差動輸入端的第一電流開關回授記憶電路FMC1、以及一連接至該共模前饋電路CMF第二差動輸入端的第二電流開關回授記憶電路FMC2,該第一電流開關回授記憶電路FMC1由第一時脈訊號切換連接至該第一差動輸入端的第一開關SW1,該第二電流開關回授記憶電路FMC2由第二時脈訊號切換連接至該第二差動輸入端的第二開關SW2,其中,該第一電流開關回授記憶電路FMC1及該第二電流開關回授記憶電路FMC2分別包括一參考電流電路IRF1(參考電流電路IRF2)、一對應於該參考電流電路IRF1(參考電流電路IRF2)的匹配電流電路IMA1(匹配電流電路IMA2)、以及一設置於該參考電流電路IRF1(參考電流電路IRF2)以及匹配電流電路IMA1(匹配電流電路IMA2)之間的運算放大器AP1(運算放大器AP2),藉由該運算放大器AP1(運算放大器AP2)降低該參考電流電路IRF1(參考電流電路IRF2)的輸入阻抗。In this embodiment, the current sample-and-hold circuit module SH mainly includes a common mode feedforward circuit CMF, a first current switch feedback memory circuit FMC1 connected to the first differential input terminal of the common mode feedforward circuit CMF, And a second current switch feedback memory circuit FMC2 connected to the second differential input terminal of the common mode feedforward circuit CMF, and the first current switch feedback memory circuit FMC1 is switched from the first clock signal to the first difference The first switch SW1 of the active input terminal, the second current switch feedback memory circuit FMC2 is connected to the second switch SW2 of the second differential input terminal by a second clock signal, wherein the first current switch feedback memory circuit FMC1 and the second current switch feedback memory circuit FMC2 respectively include a reference current circuit IRF1 (reference current circuit IRF2) and a matching current circuit IMA1 (matching current circuit IMA2) corresponding to the reference current circuit IRF1 (reference current circuit IRF2) ), and an operational amplifier AP1 (operational amplifier AP2) arranged between the reference current circuit IRF1 (reference current circuit IRF2) and the matching current circuit IMA1 (matching current circuit IMA2), by means of the operational amplifier AP1 (operational amplifier AP2) ) Reduce the input impedance of the reference current circuit IRF1 (reference current circuit IRF2).
該參考電流電路IRF1包括一第一P型場效電晶體M1、以及一第一N型場效電晶體M2,該第一P型場效電晶體M1的源極係連接至電源電壓V CC,該第一P型場效電晶體M1的汲極係連接至該第一N型場效電晶體M2的汲極,該第一N型場效電晶體M2的源極係連接至接地端G,電流訊號輸入端ISS係饋入至該第一P型場效電晶體M1的汲極以及一第一N型場效電晶體M2的汲極之間,該第一N型場效電晶體M2的汲極係連接至該第一N型場效電晶體M2的閘極;該匹配電流電路IMA1包括一第二P型場效電晶體M3、以及一第二N型場效電晶體M4,該第二P型場效電晶體M3的源極係連接至該電源電壓V CC,該第二P型場效電晶體M3的汲極係連接至該第二N型場效電晶體M4的汲極,該第二N型場效電晶體M4的源極係連接至接地端G,該第二P型場效電晶體M3的汲極係連接至該第二P型場效電晶體M3的閘極,其中,該第一P型場效電晶體M1的閘極係連接至該第二P型場效電晶體M3的閘極,該運算放大器AP1的輸入端係連接至該第一N型場效電晶體M2的閘極,該運算放大器AP1的輸出端係連接至該第二N型場效電晶體M4的閘極。其中,參考電流電路IRF2的第一P型場效電晶體M11、第二P型場效電晶體M9、第一N型場效電晶體M12、第二N型場效電晶體M10與該參考電流電路IRF1為對稱式的設計。 The reference current circuit IRF1 includes a first P-type field effect transistor M1 and a first N-type field effect transistor M2. The source of the first P-type field effect transistor M1 is connected to the power supply voltage V CC , The drain of the first P-type field effect transistor M1 is connected to the drain of the first N-type field effect transistor M2, and the source of the first N-type field effect transistor M2 is connected to the ground terminal G, The current signal input terminal ISS is fed between the drain of the first P-type field effect transistor M1 and the drain of a first N-type field effect transistor M2. The drain is connected to the gate of the first N-type field effect transistor M2; the matching current circuit IMA1 includes a second P-type field effect transistor M3 and a second N-type field effect transistor M4. The source of the two P-type field effect transistors M3 is connected to the power supply voltage V CC , the drain of the second P-type field effect transistor M3 is connected to the drain of the second N-type field effect transistor M4, The source of the second N-type field effect transistor M4 is connected to the ground terminal G, and the drain of the second P-type field effect transistor M3 is connected to the gate of the second P-type field effect transistor M3, Wherein, the gate of the first P-type field effect transistor M1 is connected to the gate of the second P-type field effect transistor M3, and the input terminal of the operational amplifier AP1 is connected to the first N-type field effect transistor. The gate of the crystal M2, and the output terminal of the operational amplifier AP1 is connected to the gate of the second N-type field effect transistor M4. Among them, the first P-type field effect transistor M11, the second P-type field effect transistor M9, the first N-type field effect transistor M12, the second N-type field effect transistor M10 of the reference current circuit IRF2 and the reference current The circuit IRF1 is a symmetrical design.
該第一電流開關回授記憶電路FMC1於其匹配電流電路IMA1的後端連接一第一共模回授電路CF1,該第二電流開關回授記憶電路FMC2於其匹配電流電路IMA2的後端連接一第二共模回授電路CF2,該第一共模回授電路CF1係連接至該第二共模回授電路CF2以平衡該第一電流開關回授記憶電路FMC1以及該第二電流開關回授記憶電路FMC2的共模點準位。The first current switch feedback memory circuit FMC1 is connected to the back end of its matching current circuit IMA1 with a first common mode feedback circuit CF1, and the second current switch feedback memory circuit FMC2 is connected to the back end of its matching current circuit IMA2. A second common mode feedback circuit CF2, the first common mode feedback circuit CF1 is connected to the second common mode feedback circuit CF2 to balance the first current switch feedback memory circuit FMC1 and the second current switch feedback The common mode point level of the memory circuit FMC2.
該第一共模回授電路CF1包括一第三P型場效電晶體M5、以及一第三N型場效電晶體M6,該第三P型場效電晶體M5的源極係連接至該電源電壓V CC,該第三P型場效電晶體M5的閘極係連接至該第一電流開關回授記憶電路FMC1的第二P型場效電晶體M3的閘極,該第三N型場效電晶體M6的源極係連接至該接地端G,該第三N型場效電晶體M6的閘極係連接至該第一電流開關回授記憶電路FMC1的該第二N型場效電晶體M4的汲極;該第二共模回授電路CF2包括一第四P型場效電晶體M7、以及一第四N型場效電晶體M8,該第四P型場效電晶體M7的源極係連接至該電源電壓,該第四P型場效電晶體M7的閘極係連接至該第二電流開關回授記憶電路FMC2的第二P型場效電晶體M9的閘極,該第四N型場效電晶體M8的源極係連接至該接地端G,該第四N型場效電晶體M8的閘極係連接至該第二電流開關回授記憶電路FMC2的該第二N型場效電晶體M10的汲極;其中,該第三P型場效電晶體M5的汲極(A)係連接至該第四N型場效電晶體M8的汲極(A),該第四P型場效電晶體M7的汲極(B)係連接至該第三N型場效電晶體M6的汲極(B)。 The first common mode feedback circuit CF1 includes a third P-type field effect transistor M5 and a third N-type field effect transistor M6. The source of the third P-type field effect transistor M5 is connected to the Power supply voltage V CC , the gate of the third P-type field effect transistor M5 is connected to the gate of the second P-type field effect transistor M3 of the first current switch feedback memory circuit FMC1, and the third N-type The source of the field effect transistor M6 is connected to the ground terminal G, and the gate of the third N-type field effect transistor M6 is connected to the second N-type field effect of the first current switch feedback memory circuit FMC1 The drain of the transistor M4; the second common mode feedback circuit CF2 includes a fourth P-type field effect transistor M7, and a fourth N-type field effect transistor M8, the fourth P-type field effect transistor M7 The source of is connected to the power supply voltage, the gate of the fourth P-type field effect transistor M7 is connected to the gate of the second P-type field effect transistor M9 of the second current switch feedback memory circuit FMC2, The source of the fourth N-type field effect transistor M8 is connected to the ground terminal G, and the gate of the fourth N-type field effect transistor M8 is connected to the second current switch feedback memory circuit FMC2. Two drains of the N-type field effect transistor M10; wherein the drain (A) of the third P-type field effect transistor M5 is connected to the drain (A) of the fourth N-type field effect transistor M8, The drain (B) of the fourth P-type field effect transistor M7 is connected to the drain (B) of the third N-type field effect transistor M6.
如「圖4」、及「圖5」所示,依據電流取樣保持電路模組的小訊號模型,電流轉移函數由下式給出: ; ; As shown in "Figure 4" and "Figure 5", according to the small signal model of the current sample-and-hold circuit module, the current transfer function is given by the following formula: ; ;
其中 是第一N型場效電晶體M2的轉導、 是第五N型場效電晶體M13的轉導、 是第六N型場效電晶體M14的轉導、 是第二N型場效電晶體M4的轉導、 是第七N型場效電晶體M15的轉導、 是第一P型場效電晶體M1的轉導、 是第二P型場效電晶體M3的轉導。 等於[ ]是電子控制的回授電阻,其中 是第五N型場效電晶體M13的輸出阻抗、其中 是第六N型場效電晶體M14的輸出阻抗。 是節點電壓 相對於節點電壓 的轉移函數(Transfer Function)。其中,輸出電流 等於 ,輸入阻抗 可由下式給出: ; among them It is the first N-type field effect transistor M2's transconductance, It is the transconductance of the fifth N-type field effect transistor M13, It is the transconductance of the sixth N-type field effect transistor M14, It is the transconductance of the second N-type field effect transistor M4, It is the transconductance of the seventh N-type field effect transistor M15, It is the transconductance of the first P-type field effect transistor M1, It is the transduction of the second P-type field effect transistor M3. equal[ ] Is an electronically controlled feedback resistor, where Is the output impedance of the fifth N-type field effect transistor M13, where It is the output impedance of the sixth N-type field effect transistor M14. Is the node voltage Relative to node voltage The transfer function (Transfer Function). Among them, the output current equal ,input resistance It can be given by the following formula: ;
通過適當調整度量比,控制 和 ,經修改後電流開關回授記憶電路的輸入阻抗可以簡化為以下的式子: ; By appropriately adjusting the metric ratio, control with , After the modification, the input impedance of the current switch feedback memory circuit can be simplified to the following formula: ;
如上面的式子所示可知,本發明的架構與傳統回授記憶單元相比(1/2倍),輸入阻抗更進一步降低了( )/2倍,由於輸入阻抗的下降使得傳輸誤差大幅地降低。改良後的切換電流式回授記憶電路後端係配合設置耦合差動複製(Coupled Differential Replicate, CDR)的共模前饋電路CMF,透過該共模前饋電路CMF改善製程變異所導致的共模輸出準位漂移,使得共模位準的輸出穩定,當輸出至下一級電路時不影響其信號位準。如圖3所示,所述的共模前饋電路CMF利用場效電晶體M16、M17、M18所產生的補償電流吸引差動對場效電晶體M24、M20的誤差電流,使得共模輸出 可維持固定;同樣的,所述的共模前饋電路CMF利用場效電晶體M21、M22、M23所產生的補償電流吸引差動對場效電晶體M25、M19的誤差電流,使得共模輸出 可維持固定,透過上述的配置可大量改善傳輸誤差。 As shown in the above formula, it can be seen that the architecture of the present invention compared with the traditional feedback memory unit (1/2 times), the input impedance is further reduced ( )/2 times, the transmission error is greatly reduced due to the drop in input impedance. The back end of the improved switching current feedback memory circuit is equipped with a coupled differential replication (Coupled Differential Replicate, CDR) common mode feedforward circuit CMF, and the common mode caused by process variation is improved through the common mode feedforward circuit CMF. The output level drifts, so that the output of the common mode level is stable, and the signal level is not affected when output to the next-stage circuit. As shown in Figure 3, the common mode feedforward circuit CMF uses the compensation current generated by the field effect transistors M16, M17, and M18 to attract the error current of the differential pair field effect transistors M24, M20, so that the common mode output It can be kept fixed; similarly, the common mode feedforward circuit CMF uses the compensation current generated by the field effect transistors M21, M22, M23 to attract the error current of the differential pair field effect transistors M25, M19, so that the common mode output It can be kept fixed, and the transmission error can be greatly improved through the above configuration.
以下請配合參閱「圖6」以及「圖7」,係揭示本發明中數位雜訊消除電路的方塊示意圖以及D型正反器的方塊示意圖,如圖所示:Please refer to "FIG. 6" and "FIG. 7" below to show the block diagram of the digital noise elimination circuit and the block diagram of the D-type flip-flop in the present invention, as shown in the figure:
所述的數位雜訊消除電路20包括第一輸入端P1、第二輸入端P2、輸出端P3、延遲器21、第一一階差分運算器22、第二一階差分運算器23、第一係數調整器d1、以及第二係數調整器d2。The digital
該第一輸入端P1所輸入的第一量化取樣訊號,係經由第一係數調整器d1後傳送至該延遲器21,該延遲器21於接收該第一量化取樣訊號後,依據該第一量化取樣訊號產生一第一輸出訊號。The first quantized sample signal input from the first input terminal P1 is sent to the
該第二輸入端P2所輸入的第二量化取樣訊號,係經由第二係數調整器d2後,與該第一輸出訊號相減後輸入至該第一一階差分運算器22並輸出一第二輸出訊號;該第二輸出訊號輸入至該第二一階差分運算器23並輸出一第三輸出訊號,該第三輸出訊號加上該第一輸出訊號以輸出一第四輸出訊號至該輸出端P3。The second quantized sampling signal input from the second input terminal P2 is subtracted from the first output signal after passing through the second coefficient adjuster d2, and then input to the first first-
「圖6」示出了數位雜訊消除電路20(Digital Noise Cancellation Circuit, DNCC)的數學模型。輸出 可表示如下面的式子: ; "FIG. 6" shows a mathematical model of the Digital Noise Cancellation Circuit (DNCC) 20 (Digital Noise Cancellation Circuit, DNCC). Output It can be expressed as the following formula: ;
其中係數 和 分別用1.0和4.0表示,因此上述等式可以修改為下列的式子: ; Where the coefficient with Expressed by 1.0 and 4.0, respectively, so the above equation can be modified to the following equation: ;
其中
,
,
,
,
。輸出數字介於-19和+19之間,分別作為A,B,C,D和E的輸入函數。6位元數字,從S1到S6,以2補數形式,用於表示輸出數字。其中S6是輸出數字的最高有效位元(Most Significant Bit, MSB),S1是輸出數字的最低有效位元(Least Significant Bit, LSB)。 如上面的式子所示,實現數位雜訊消除電路20需要五個延遲單元(分別對應A、B、C、D、E),可以使用一對D型正反器FF1、FF2(如圖7所示)產生一個延遲單元(
),如圖7所示,非重疊時脈信號
、
分別輸出至該D型正反器FF1、及FF2,使用一對D型正反器FF1、FF2產生一個單位延遲(
)。該輸出數字可寫為:
S6=Ʃm(0,2,3,6,7,8,10,11,14,15,18,19,22,26,27,30);
S5=Ʃm(0,3,6,7,8,11,14,15,18,19,21,22,26,27,29,30);
S4=Ʃm(0,2,5,7,8,10,13,15,17,19,20,22,25,27,28,30);
S3=Ʃm(0,1,2,3,4,5,6,7,8,9,10,11,12,13,14,15);
S2=Ʃm(0,1,2,3,4,5,6,7,16,17,18,19,20,21,22,23);
S1=1。
among them , , , , . The output numbers are between -19 and +19 as input functions for A, B, C, D, and E, respectively. 6 digits, from S1 to S6, in the form of 2's complement, used to represent the output number. Among them, S6 is the most significant bit (Most Significant Bit, MSB) of the output number, and S1 is the least significant bit (Least Significant Bit, LSB) of the output number. As shown in the above formula, five delay units (respectively corresponding to A, B, C, D, E) are needed to realize the digital
上面的數字可以透過卡諾圖及布林表達式簡化。S6、S5、S4、S3、S2的布林表達式如下: ; ; ; ; ; The above numbers can be simplified through Karnaugh map and Bollinger expressions. The Boolean expressions of S6, S5, S4, S3, and S2 are as follows: ; ; ; ; ;
「圖8」示出了利用所提出的算法實現的所提出的DNCC的模擬輸入,輸入
將被延遲3個單位
和4個單位
以分別產生
和
;此外,輸入
以產生
,並且延遲1個單位
和2個單位
以分別產生
和
。其中,DNCC於六位元2的補數表格對應如下:
於一實施例中,例如A=-1,B=+1,C=-1,D=-1和E=+1,Y(z)=(2A-B)+(4C-8D+4E)=5,於2的補碼值(S6至S1)輸出為000101(如上表所示)。In one embodiment, for example, A=-1, B=+1, C=-1, D=-1 and E=+1, Y(z)=(2A-B)+(4C-8D+4E) =5, the 2's complement value (S6 to S1) is output as 000101 (as shown in the table above).
以下請配合參閱「圖9」、「圖10」及「圖11」,係揭示傳統回授記憶電路與改良回授記憶電路的傳輸錯誤模擬示意圖、輸入電流和輸出電流的線性關係示意圖,如圖所示:Please refer to "Figure 9", "Figure 10" and "Figure 11" below, which reveal the transmission error simulation diagram of the traditional feedback memory circuit and the improved feedback memory circuit, and the linear relationship diagram of the input current and the output current, as shown in the figure Shown:
在「圖9」中,示出了傳統回授記憶電路和本發明改良後的回授記憶電路的傳輸誤差百分比模擬示意圖,如圖中所表示,本發明改良後的回授記憶電路於±35μA提供大約0.1%的傳輸誤差。此外,當回授記憶電路提供振盪時,該傳輸誤差實際上是線性的。因此,改良後的回授記憶電路提供更好的穩定性。In "FIG. 9", the simulation diagram of the transmission error percentage of the traditional feedback memory circuit and the improved feedback memory circuit of the present invention is shown. As shown in the figure, the improved feedback memory circuit of the present invention is at ±35μA. Provides a transmission error of approximately 0.1%. In addition, when the feedback memory circuit provides oscillation, the transmission error is actually linear. Therefore, the improved feedback memory circuit provides better stability.
在「圖10」中,示出了輸入電流和輸出電流的線性關係;「圖11」示出了於正弦輸入信號時電流模式取樣保持電路的模擬示意圖,當頻率為500 kHz,振幅為25μA時,取樣頻率為10.24 MHz,過取樣率為256,依據上述的模擬示意圖表示本發明的保持電路的準確度和可行度均能夠達到相當不錯的表現。In "Figure 10", the linear relationship between input current and output current is shown; "Figure 11" shows the analog schematic diagram of the current mode sample-and-hold circuit when a sinusoidal input signal is applied. When the frequency is 500 kHz and the amplitude is 25 μA , The sampling frequency is 10.24 MHz, and the over-sampling rate is 256. According to the above-mentioned analog schematic diagram, it is shown that the accuracy and feasibility of the holding circuit of the present invention can achieve quite good performance.
綜上所述,本發明與傳統的回授記憶電路(Feedback Memory Cell)相比,可以更大幅地降低輸入阻抗,藉此減少傳輸誤差。此外,本發明通過改進的回授記憶電路配合差分交錯連接的共模電路,修正並加速了響應電路並帶來穩定的輸出電流。In summary, compared with the traditional feedback memory cell (Feedback Memory Cell), the present invention can greatly reduce the input impedance, thereby reducing the transmission error. In addition, the present invention corrects and accelerates the response circuit and brings stable output current through the improved feedback memory circuit and the differentially interleaved common mode circuit.
以上已將本發明做一詳細說明,惟以上所述者,僅惟本發明之一較佳實施例而已,當不能以此限定本發明實施之範圍,即凡依本發明申請專利範圍所作之均等變化與修飾,皆應仍屬本發明之專利涵蓋範圍內。The present invention has been described in detail above, but what has been described above is only a preferred embodiment of the present invention. It should not be used to limit the scope of implementation of the present invention, that is, everything made in accordance with the scope of patent application of the present invention is equal Changes and modifications should still fall within the scope of the patent of the present invention.
100:三角積分類比數位轉換器 10:數位訊號調變器 11:第一級調變器 12:第二級調變器 20:數位雜訊消除電路 SH1:第一取樣保持電路 SH2:第二取樣保持電路 D:切換電流式延遲單元 D1:第一積分器 D2:第二積分器 D3:第三積分器 D4:第四積分器 a 1:第一係數調整器 a 2:第二係數調整器 a 3:第三係數調整器 a 4:第四係數調整器 b 1:第一數位類比轉換器 b 2:第二數位類比轉換器 b 3:第三數位類比轉換器 b 4:第四數位類比轉換器 Q1:第一量化器 Q2:第二量化器 IN:外部輸入訊號 SH:電流取樣保持電路模組 FMC1:第一電流開關回授記憶電路 SW1:第一開關 IRF1:參考電流電路 M1:第一P型場效電晶體 M2:第一N型場效電晶體 IMA1:匹配電流電路 M3:第二P型場效電晶體 M4:第二N型場效電晶體 AP1:運算放大器 FMC2:第二電流開關回授記憶電路 SW2:第二開關 IRF2:參考電流電路 M11:第一P型場效電晶體 M12:第一N型場效電晶體 IMA2:匹配電流電路 M9:第二P型場效電晶體 M10:第二N型場效電晶體 AP2:運算放大器 M13:第五N型場效電晶體 M14:第六N型場效電晶體 M15:第七N型場效電晶體 V CC:電源電壓 G:接地端 ISS:電流訊號輸入端 CF1:第一共模回授電路 M5:第三P型場效電晶體 M6:第三N型場效電晶體 CF2:第二共模回授電路 M7:第四P型場效電晶體 M8:第四N型場效電晶體 CMF:共模前饋電路 M16:場效電晶體 M17:場效電晶體 M18:場效電晶體 M19:場效電晶體 M20:場效電晶體 M21:場效電晶體 M22:場效電晶體 M23:場效電晶體 M24:場效電晶體 M25:場效電晶體 FF1:D型正反器 FF2:D型正反器 :非重疊時鐘信號 :非重疊時鐘信號 P1:第一輸入端 P2:第二輸入端 P3:輸出端100: Delta-sigma analog-to-digital converter 10: Digital signal modulator 11: First-stage modulator 12: Second-stage modulator 20: Digital noise elimination circuit SH1: First sample-and-hold circuit SH2: Second sampling Holding circuit D: switching current type delay unit D1: first integrator D2: second integrator D3: third integrator D4: fourth integrator a 1 : first coefficient adjuster a 2 : second coefficient adjuster a 3 : The third coefficient adjuster a 4 : The fourth coefficient adjuster b 1 : The first digital analog converter b 2 : The second digital analog converter b 3 : The third digital analog converter b 4 : The fourth digital analog converter Q1: First quantizer Q2: Second quantizer IN: External input signal SH: Current sample-and-hold circuit module FMC1: First current switch feedback memory circuit SW1: First switch IRF1: Reference current circuit M1: First P-type field effect transistor M2: first N-type field effect transistor IMA1: matching current circuit M3: second P-type field effect transistor M4: second N-type field effect transistor AP1: operational amplifier FMC2: second current Switch feedback memory circuit SW2: second switch IRF2: reference current circuit M11: first P-type field effect transistor M12: first N-type field effect transistor IMA2: matching current circuit M9: second P-type field effect transistor M10: second N-type field effect transistor AP2: operational amplifier M13: fifth N-type field effect transistor M14: sixth N-type field effect transistor M15: seventh N-type field effect transistor V CC : power supply voltage G : Ground terminal ISS: Current signal input terminal CF1: First common mode feedback circuit M5: Third P-type field effect transistor M6: Third N-type field effect transistor CF2: Second common mode feedback circuit M7: No. Four P-type field effect transistor M8: Fourth N-type field effect transistor CMF: Common mode feedforward circuit M16: Field effect transistor M17: Field effect transistor M18: Field effect transistor M19: Field effect transistor M20: Field Effect Transistor M21: Field Effect Transistor M22: Field Effect Transistor M23: Field Effect Transistor M24: Field Effect Transistor M25: Field Effect Transistor FF1: D-type flip-flop FF2: D-type flip-flop : Non-overlapping clock signal : Non-overlapping clock signal P1: first input terminal P2: second input terminal P3: output terminal
圖1為本發明中三角積分類比數位轉換器的方塊示意圖。Fig. 1 is a block diagram of the delta-sigma analog-to-digital converter in the present invention.
圖2為本發明中積分器的方塊示意圖。Figure 2 is a block diagram of the integrator in the present invention.
圖3為本發明電流取樣保持電路模組的電路示意圖(一)。FIG. 3 is a schematic circuit diagram (1) of the current sample-and-hold circuit module of the present invention.
圖4為本發明電流取樣保持電路模組的電路示意圖(二)。4 is a schematic circuit diagram (2) of the current sample-and-hold circuit module of the present invention.
圖5為本發明電流取樣保持電路模組的等效電路。Figure 5 is an equivalent circuit of the current sample-and-hold circuit module of the present invention.
圖6為本發明中數位雜訊消除電路的方塊示意圖。FIG. 6 is a block diagram of the digital noise elimination circuit in the present invention.
圖7為本發明中D型正反器的方塊示意圖。Fig. 7 is a block diagram of the D-type flip-flop in the present invention.
圖8為數位雜訊消除電路(DNCC)的模擬輸入-輸出模擬波形圖。Figure 8 is the analog input-output analog waveform diagram of the digital noise cancellation circuit (DNCC).
圖9為傳統回授記憶電路和本發明改良後的回授記憶電路的傳輸誤差百分比模擬圖。9 is a simulation diagram of the transmission error percentage of the traditional feedback memory circuit and the improved feedback memory circuit of the present invention.
圖10為輸入電流和輸出電流的線性關係圖。Figure 10 shows the linear relationship between input current and output current.
圖11為於正弦輸入信號時電流模式取樣保持電路的模擬圖。Fig. 11 is a simulation diagram of the current mode sample-and-hold circuit when a sinusoidal input signal is applied.
SH:電流取樣保持電路模組 SH: Current sample and hold circuit module
FMC1:第一電流開關回授記憶電路 FMC1: The first current switch feedback memory circuit
SW1:第一開關 SW1: The first switch
IRF1:參考電流電路 IRF1: Reference current circuit
M1:第一P型場效電晶體 M1: The first P-type field effect transistor
M2:第一N型場效電晶體 M2: The first N-type field effect transistor
IMA1:匹配電流電路 IMA1: matching current circuit
M3:第二P型場效電晶體 M3: The second P-type field effect transistor
M4:第二N型場效電晶體 M4: The second N-type field effect transistor
AP1:運算放大器 AP1: Operational amplifier
FMC2:第二電流開關回授記憶電路 FMC2: The second current switch feedback memory circuit
SW2:第二開關 SW2: second switch
IRF2:參考電流電路 IRF2: Reference current circuit
M11:第一P型場效電晶體 M11: The first P-type field effect transistor
M12:第一N型場效電晶體 M12: The first N-type field effect transistor
IMA2:匹配電流電路 IMA2: matching current circuit
M9:第二P型場效電晶體 M9: The second P-type field effect transistor
M10:第二N型場效電晶體 M10: The second N-type field effect transistor
AP2:運算放大器 AP2: Operational amplifier
VCC:電源電壓 V CC : Power supply voltage
G:接地端 G: Ground terminal
ISS:電流訊號輸入端 ISS: Current signal input terminal
CF1:第一共模回授電路 CF1: The first common mode feedback circuit
M5:第三P型場效電晶體 M5: The third P-type field effect transistor
M6:第三N型場效電晶體 M6: The third N-type field effect transistor
CF2:第二共模回授電路 CF2: The second common mode feedback circuit
M7:第四P型場效電晶體 M7: The fourth P-type field effect transistor
M8:第四N型場效電晶體 M8: The fourth N-type field effect transistor
CMF:共模前饋電路 CMF: common mode feedforward circuit
M16:場效電晶體 M16: Field Effect Transistor
M17:場效電晶體 M17: Field Effect Transistor
M18:場效電晶體 M18: Field Effect Transistor
M19:場效電晶體 M19: Field Effect Transistor
M20:場效電晶體 M20: Field Effect Transistor
M21:場效電晶體 M21: Field Effect Transistor
M22:場效電晶體 M22: Field Effect Transistor
M23:場效電晶體 M23: Field Effect Transistor
M24:場效電晶體 M24: Field Effect Transistor
M25:場效電晶體 M25: field effect transistor
Claims (6)
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200629738A (en) * | 2004-10-12 | 2006-08-16 | Sony Corp | Sample hold circuit, and pipeline ad converter using the circuit |
TW201105048A (en) * | 2009-07-21 | 2011-02-01 | Univ Nat Taipei Technology | Fully differential high-order multi-stage noise shaping switched-current delta-sigma modulator |
US20120154048A1 (en) * | 2010-12-17 | 2012-06-21 | Dialog Semiconductor Gmbh | Amplifier common-mode control methods |
US8305247B2 (en) * | 2004-09-20 | 2012-11-06 | The Trustees Of Columbia University In The City Of New York | Low voltage digital to analog converter, comparator and sigma-delta modulator circuits |
US8674765B2 (en) * | 2012-03-27 | 2014-03-18 | Dialog Semiconductor Gmbh | Fully differential amplifier topology to drive dynamic speakers in class AB mode |
-
2020
- 2020-01-08 TW TW109100627A patent/TWI720773B/en active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8305247B2 (en) * | 2004-09-20 | 2012-11-06 | The Trustees Of Columbia University In The City Of New York | Low voltage digital to analog converter, comparator and sigma-delta modulator circuits |
TW200629738A (en) * | 2004-10-12 | 2006-08-16 | Sony Corp | Sample hold circuit, and pipeline ad converter using the circuit |
TW201105048A (en) * | 2009-07-21 | 2011-02-01 | Univ Nat Taipei Technology | Fully differential high-order multi-stage noise shaping switched-current delta-sigma modulator |
US20120154048A1 (en) * | 2010-12-17 | 2012-06-21 | Dialog Semiconductor Gmbh | Amplifier common-mode control methods |
US8674765B2 (en) * | 2012-03-27 | 2014-03-18 | Dialog Semiconductor Gmbh | Fully differential amplifier topology to drive dynamic speakers in class AB mode |
Non-Patent Citations (2)
Title |
---|
2008年12月03日公開文件Guo-Ming Sung ; Dept. of Electr. Eng., Nat. Taipei Univ. of Technol., Taipei ; Chih-Ping Yu ; Yueh-Hung Hou, "High-order delta-sigma modulator with switched-current feedback memory cell" Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on, http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04746228_20081203_摘要、第1圖、第1148頁II. MODULATOR STRUCTURE、第1149頁III. PROPOS |
年12月03日公開文件Guo-Ming Sung ; Dept. of Electr. Eng., Nat. Taipei Univ. of Technol., Taipei ; Chih-Ping Yu ; Yueh-Hung Hou, "High-order delta-sigma modulator with switched-current feedback memory cell" Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on, http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=04746228_20081203_摘要、第1圖、第1148頁II. MODULATOR STRUCTURE、第1149頁III. PROPOS * |
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