TWI717302B - Detecting system and method for deterioration of semiconductor process kits - Google Patents

Detecting system and method for deterioration of semiconductor process kits Download PDF

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TWI717302B
TWI717302B TW109125708A TW109125708A TWI717302B TW I717302 B TWI717302 B TW I717302B TW 109125708 A TW109125708 A TW 109125708A TW 109125708 A TW109125708 A TW 109125708A TW I717302 B TWI717302 B TW I717302B
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semiconductor process
tested
raman spectrum
raman
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TW202205465A (en
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林權瑞
沈峰民
蘇鴻嘉
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頂極科技股份有限公司
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Priority to CN202010893305.5A priority patent/CN114062342B/en
Priority to US17/030,520 priority patent/US11320381B2/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM]
    • G05B19/41875—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS], computer integrated manufacturing [CIM] characterised by quality surveillance of production
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/08—Optical fibres; light guides
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B2219/00—Program-control systems
    • G05B2219/30—Nc systems
    • G05B2219/45—Nc applications
    • G05B2219/45031—Manufacturing semiconductor wafers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

Abstract

The present invention provides a detecting system for deterioration of semiconductor process kits. The system has a Raman spectrometer, an optical detecting unit, a Raman spectrum database unit, and a controlling computing unit. The optical detecting unit and the controlling computing unit are both coupled to the Raman spectrometer. The Raman spectrometer detects semiconductor process kits under detection through the optical detecting unit to obtain a first Raman spectrum signal. The Raman spectrum database unit stores a plurality of second Raman spectrum signals corresponding to multiple known use hours, multiple known materials, multiple known material compounds, or multiple known material deterioration state of the semiconductor process kits under detection. The controlling computing unit compares the first Raman spectrum signal and a threshold of the second Raman spectrum signals and outputs a judgment signal related to the deterioration state of the semiconductor process kits under detection.

Description

半導體製程零配件的質變檢測系統及方法Qualitative change detection system and method for semiconductor process parts

本發明是關於一種檢測系統及方法，特別是關於一種半導體製程零配件的質變檢測系統及方法。The invention relates to a detection system and method, in particular to a qualitative change detection system and method of semiconductor manufacturing process parts.

半導體製造廠的生產設備約佔總成本的80%，由於這些半導體生產設備所使用之製程零配件種類多、成本高，且大部分的製程零配件更換頻率難精準預估，因而如何同時兼顧機台妥善率及成本控制，一直是半導體產業面臨的難題之一。The production equipment of semiconductor manufacturing plants accounts for about 80% of the total cost. Because these semiconductor production equipment uses a large variety of process parts and high costs, and most of the process parts replacement frequency is difficult to accurately predict, how to take into account the machine at the same time Taiwan proper rate and cost control have always been one of the problems facing the semiconductor industry.

半導體製造的良率受半導體生產設備之半導體製程零配件的妥善率的影響很大，任何半導體製程零配件上的微細缺陷或表面上殘留的微細分子，都可能成為半導體生產過程的污染源。在高階製程中，由於製程線徑的縮小，之前對良率不會造成影響的微細分子，將可能嚴重影響半導體製造的品質。因此，半導體製程零配件在使用過後必須經過清洗以及檢測來汰換已質變且不堪使用的製程零配件來避免汙染源的產生，以滿足高階製程需求。The yield rate of semiconductor manufacturing is greatly affected by the proper rate of the semiconductor process parts of the semiconductor production equipment. Any minute defects on the semiconductor process parts or remaining fine molecules on the surface may become a source of pollution in the semiconductor production process. In the high-end manufacturing process, due to the shrinking of the process wire diameter, the fine molecules that did not affect the yield rate before may seriously affect the quality of semiconductor manufacturing. Therefore, after use, semiconductor process parts must be cleaned and inspected to replace process parts that have changed in quality and are unusable to avoid the generation of pollution sources to meet high-end process requirements.

然而，這些半導體製程零配件經過一定的使用時數後可能發生質變，即便經過清洗，也無法滿足高階製程需求。這時候，必須對半導體製程零配件進行更換。現今對半導體製程零配件進行更換的時機掌握，通常是依靠經驗值或者利用檢測工具來達成。然而，單依靠經驗值的結果往往在半導體製程零配件尚處於堪用的狀態下就使其退役，有利用效益低落之弊，而目前所能利用的檢測工具也只能測得這些製程零配件的尺寸變化，無法精確得知半導體製程零配件在微細缺陷發生前的性質改變，對於高階製程來說，並不足以精準判斷出經過一定使用時數或清洗時數後之半導體製程零配件的品質好壞。However, these semiconductor process parts may undergo qualitative changes after a certain number of hours of use, and even after cleaning, they cannot meet high-end process requirements. At this time, the semiconductor process parts must be replaced. Nowadays, the timing of the replacement of semiconductor process parts is usually achieved by relying on experience or using testing tools. However, the result of relying solely on experience values is often decommissioned when the semiconductor process parts are still in a usable state, which has the disadvantage of low utilization efficiency, and currently available inspection tools can only measure these process parts Dimensional changes, it is impossible to accurately know the nature of semiconductor process parts before the occurrence of micro-defects. For high-end processes, it is not enough to accurately determine the quality of semiconductor process parts after a certain number of hours of use or cleaning. Good or bad.

為解決此問題，以滿足高階製程需求，有需要提出一種可以精準檢測出經一段時間使用或清洗後之半導體製程零配件的好壞差異的半導體製程零配件的質變檢測系統。In order to solve this problem and meet the needs of high-end processes, it is necessary to propose a qualitative change detection system for semiconductor process parts that can accurately detect the difference in quality of semiconductor process parts after a period of use or cleaning.

有鑒於上述問題，本發明提出一種半導體製程零配件的質變檢測系統及方法。In view of the above-mentioned problems, the present invention provides a system and method for qualitative change detection of semiconductor process parts.

一實施態樣中，本發明提出一種半導體製程零配件的質變檢測系統。一實施例中，所提出的檢測系統包含一拉曼光譜儀、一光學檢測單元、一拉曼光譜資料庫單元及一控制運算單元。光學檢測單元耦接至拉曼光譜儀，來自拉曼光譜儀的一出射光束透過光學檢測單元投射至一待測的半導體製程零配件的至少一目標區域上，且自目標區域激發的帶有第一拉曼光譜信號的拉曼散射光透過光學檢測單元傳回至拉曼光譜儀。拉曼光譜資料庫單元儲存有對應於待測的半導體製程零配件的複數已知使用時數或複數已知材料或複數已知材料化合物或複數已知材料之質變狀態的多個第二拉曼光譜信號的資料。控制運算單元耦接至拉曼光譜儀及拉曼光譜資料庫單元且自拉曼光譜儀接收第一拉曼光譜信號及自拉曼光譜資料庫單元取得這些第二拉曼光譜信號，控制運算單元比較第一拉曼光譜信號及這些第二拉曼光譜信號的閾值後輸出關聯於待測的半導體製程零配件的質變狀態的一判斷信號。In one embodiment, the present invention provides a qualitative change detection system for semiconductor process parts. In one embodiment, the proposed detection system includes a Raman spectrometer, an optical detection unit, a Raman spectrum database unit, and a control arithmetic unit. The optical detection unit is coupled to the Raman spectrometer, and an exit beam from the Raman spectrometer is projected through the optical detection unit to at least one target area of a semiconductor process component to be tested, and the first laser beam is excited from the target area. The Raman scattered light of the Mann spectrum signal is transmitted back to the Raman spectrometer through the optical detection unit. The Raman spectroscopy database unit stores a plurality of second Raman corresponding to the plurality of known use hours or the plurality of known materials or the plurality of known material compounds or the qualitative change states of the plurality of known materials of the semiconductor process parts to be tested Spectral signal information. The control calculation unit is coupled to the Raman spectrometer and the Raman spectrum database unit and receives the first Raman spectrum signals from the Raman spectrometer and obtains these second Raman spectrum signals from the Raman spectrum database unit. The control calculation unit compares the first Raman spectrum signals After a Raman spectrum signal and the threshold values of these second Raman spectrum signals, a judgment signal related to the qualitative change state of the semiconductor process component to be tested is output.

一實施例中，待測的半導體製程零配件是由無機材料製成。其中，所稱的無機材料可以是矽、石英、氧化鋁、氧化釔、釔鋁石榴石其中之一。In one embodiment, the semiconductor process components to be tested are made of inorganic materials. The said inorganic material can be one of silicon, quartz, alumina, yttrium oxide, and yttrium aluminum garnet.

一實施例中，所提出的半導體製程零配件的質變檢測系統更包含一顯示單元，其耦接至控制運算單元，用以接收判斷信號且基於判斷信號顯示關聯於待測的半導體製程零配件的質變狀態的判斷結果。In one embodiment, the proposed qualitative change detection system for semiconductor process parts further includes a display unit, which is coupled to the control arithmetic unit, for receiving the judgment signal and displaying the information associated with the semiconductor process part under test based on the judgment signal The judgment result of the qualitative change state.

一實施例中，上述的關聯於待測的半導體製程零配件的質變狀態的判斷結果包含待測的半導體製程零配件尚可使用、待測的半導體製程零配件不應使用、待測的半導體製程零配件的可使用時數、待測的半導體製程零配件的質變百分比、待測的半導體製程零配件的化合物成分、待測的半導體製程零配件材料成分其中之一。In one embodiment, the above-mentioned judgment result related to the qualitative change state of the semiconductor process part to be tested includes the semiconductor process part to be tested can still be used, the semiconductor process part to be tested should not be used, and the semiconductor process part to be tested One of the usable hours of the parts, the percentage of qualitative change of the semiconductor process parts to be tested, the compound composition of the semiconductor process parts to be tested, and the material composition of the semiconductor process parts to be tested.

一實施例中，上述的待測的半導體製程零配件的目標區域的個數為二個以上。In one embodiment, the number of target regions of the semiconductor process parts to be tested is two or more.

一實施例中，上述的目標區域內的投射光為一光點。In an embodiment, the above-mentioned projected light in the target area is a light spot.

另一實施態樣中，本發明提出一種半導體製程零配件的質變檢測方法。一實施例中，所提出的檢測方法包含下列步驟：提供一拉曼光譜儀；耦接一和拉曼光譜儀匹配的光學檢測單元至拉曼光譜儀；耦接一和拉曼光譜儀匹配的控制運算單元至拉曼光譜儀；耦接一儲存有待測的半導體製程零配件之對應多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的多個參照用拉曼光譜信號的拉曼光譜資料庫單元至控制運算單元；以光學檢測單元檢測待測的半導體製程零配件；及比較待測的半導體製程零配件激發的拉曼光譜信號和自拉曼光譜資料庫單元中取得的待測的半導體製程零配件的多個參照用拉曼光譜信號的閾值。In another embodiment, the present invention provides a method for detecting qualitative changes of semiconductor process components. In one embodiment, the proposed detection method includes the following steps: providing a Raman spectrometer; coupling an optical detection unit matching the Raman spectrometer to the Raman spectrometer; coupling a control computing unit matching the Raman spectrometer to Raman spectrometer; coupled to a plurality of known usage hours or a plurality of known materials or a plurality of known material compounds or a plurality of qualitative changes of a plurality of known materials Refer to the Raman spectrum database unit using the Raman spectrum signal to the control arithmetic unit; use the optical detection unit to detect the semiconductor process parts to be tested; and compare the Raman spectrum signal excited by the semiconductor process parts to be tested and the self-Raman The threshold values of multiple reference Raman spectroscopy signals of the semiconductor process parts to be tested obtained from the spectral database unit.

一實施例中，所提出的檢測方法還包含下列步驟：判斷待測的半導體製程零配件的質變狀態。In one embodiment, the proposed detection method further includes the following steps: judging the qualitative change state of the semiconductor process component to be tested.

一實施例中，所提出的檢測方法還包含下列步驟：將待測的半導體製程零配件的當前使用時數或當前材料的拉曼光譜信號或當前材料化合物的拉曼光譜或當前材料的質變參數或當前激發的拉曼光譜信號輸入至拉曼光譜資料庫單元。In one embodiment, the proposed detection method further includes the following steps: the current use hours of the semiconductor process component to be tested or the Raman spectrum signal of the current material or the Raman spectrum of the current material compound or the qualitative change parameter of the current material Or the currently excited Raman spectrum signal is input to the Raman spectrum database unit.

綜上所述，依照本發明各實施例所描述的半導體製程零配件的質變檢測系統，利用和拉曼光譜儀搭配匹配的光學檢測單元、控制運算單元及拉曼光譜資料庫單元，除了可準確且有效檢測出經歷一定使用時數之半導體製程零配件的質變狀態、經歷不同材料質變之半導體製程零配件的質變狀態、具有不同材料或不同材料化合物之半導體製程零配件的質變狀態、半導體製程零配件的材料成分、半導體製程零配件上的材料化合物外，還可進一步將檢測結果、材料成分的拉曼光譜、材料化合物的拉曼光譜及材料質變參數輸入至拉曼光譜資料庫單元中作為下次檢測的比較及判斷參考，進而在拉曼光譜資料庫單元中資料筆數的增加之下，提高檢測結果的準確度。因此，本發明所提出的半導體製程零配件的質變檢測系統，可以精準判斷出半導體製程零配件的好壞差異，滿足高階製程需求。To sum up, according to the qualitative change detection system for semiconductor process parts described in the embodiments of the present invention, the optical detection unit, the control computing unit and the Raman spectrum database unit matched with the Raman spectrometer are used, in addition to being accurate and Effectively detect the qualitative change state of semiconductor process parts that have experienced a certain number of hours of use, the qualitative change state of semiconductor process parts that have undergone qualitative changes of different materials, the qualitative change state of semiconductor process parts that have different materials or compounds of different materials, and semiconductor process parts In addition to the material composition of the material and the material compound on the semiconductor process parts, the detection result, the Raman spectrum of the material composition, the Raman spectrum of the material compound and the material qualitative change parameters can be further input into the Raman spectrum database unit as the next time The comparison and judgment reference of the detection, and the increase of the number of data in the Raman spectrum database unit, improves the accuracy of the detection result. Therefore, the qualitative change detection system for semiconductor process parts proposed in the present invention can accurately determine the difference between the quality of semiconductor process parts and meet the needs of high-end manufacturing processes.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1是一系統架構圖，顯示本發明一實施例之半導體製程零配件的質變檢測系統。請參照圖1，本發明中，半導體製程零配件的質變檢測系統1至少具有一拉曼光譜儀(Raman Spectrometer)11、一和拉曼光譜儀11匹配的光學檢測單元12、一和拉曼光譜儀11匹配的控制運算單元13及一和控制運算單元13匹配的拉曼光譜(Raman Spectra)資料庫單元14。光學檢測單元12例如是具有如聚光鏡、分光鏡和濾光片等各種光學元件的光學系統，其內部配置的光學元件之種類及個數以及光學元件之間的光路設計，本發明不在此設限，只要能和拉曼光譜儀11匹配而能對待測的半導體製程零配件2進行拉曼光譜檢測的光學系統都可被視為本發明的光學檢測單元12。控制運算單元13具有比對運算、邏輯運算、分析運算及判斷運算的能力以及具有控制其他單元例如拉曼光譜儀11和拉曼光譜資料庫單元14的能力，例如是微處理器，本發明不對其呈現形式設限，只要能夠具有上述的能力而能和拉曼光譜儀11匹配，進而對拉曼光譜信號進行處理的控制運算系統例如是微處理晶片，都可被視為本發明的控制運算單元13。拉曼光譜資料庫單元14儲存有各種半導體製程零配件之多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料質變狀態的多個拉曼光譜信號，具有儲存資料的功能，例如是一記憶體或硬碟或雲端系統，本發明不在此設限其表現形式，只要能夠進行拉曼光譜資料的接收、輸出及儲存，而能夠和控制運算單元13匹配的拉曼光譜資料儲存系統，都可被視為本發明的拉曼光譜資料庫單元14。FIG. 1 is a system architecture diagram showing a qualitative change detection system for semiconductor process parts according to an embodiment of the present invention. Please refer to FIG. 1. In the present invention, the qualitative change detection system 1 for semiconductor process parts has at least one Raman Spectrometer 11, an optical detection unit 12 matched with the Raman spectrometer 11, and one matched with the Raman spectrometer 11 The control arithmetic unit 13 and a Raman Spectra database unit 14 matched with the control arithmetic unit 13. The optical detection unit 12 is, for example, an optical system with various optical elements such as a condenser, a beam splitter, and a filter. The type and number of optical elements arranged inside and the optical path design between the optical elements are not limited here. As long as it can be matched with the Raman spectrometer 11 and the optical system capable of performing Raman spectroscopy detection of the semiconductor process component 2 to be tested, it can be regarded as the optical detection unit 12 of the present invention. The control calculation unit 13 has the ability of comparison calculations, logic calculations, analysis calculations, and judgment calculations, as well as the ability to control other units such as the Raman spectrometer 11 and the Raman spectrum database unit 14, such as a microprocessor. The presentation form is limited. As long as it has the above-mentioned capabilities and can be matched with the Raman spectrometer 11, and then the control operation system for processing the Raman spectrum signal, such as a micro-processing chip, can be regarded as the control operation unit 13 of the present invention. . The Raman spectrum database unit 14 stores a plurality of known use hours or a plurality of known materials or a plurality of known material compounds or a plurality of Raman spectroscopy signals of a plurality of known material quality change states of various semiconductor process parts , Has the function of storing data, such as a memory or hard disk or cloud system. The present invention does not limit its manifestation here, as long as it can receive, output and store Raman spectroscopy data, and can control the computing unit 13 The matched Raman spectrum data storage system can be regarded as the Raman spectrum database unit 14 of the present invention.

本發明中，所稱的半導體製程零配件是指用於半導體製程中的製程零配件，特別是由無機材料製成的製程零配件，包含但不限於：應用於蝕刻製程的矽(Si)環；應用於蝕刻製程或沉積製程的石英(Quartz)件，例如石英爐管、石英晶舟、石英環、石英槽、石英加熱器等；作為半導體腔體製程零配件或晶圓傳送製程零配件的氧化鋁陶瓷件(Al 2O 3)；作為半導體裝置內部塗覆件或半導體腔體內的具有抗電漿蝕刻的保護件，例如氧化釔(Y 2O 3)、釔鋁石榴石(YAG)。 In the present invention, the term "semiconductor process parts" refers to process parts used in the semiconductor process, especially process parts made of inorganic materials, including but not limited to: silicon (Si) rings used in the etching process ; Quartz parts used in etching or deposition processes, such as quartz furnace tubes, quartz boats, quartz rings, quartz baths, quartz heaters, etc.; as parts for semiconductor cavity systems or wafer transfer processes Alumina ceramics (Al 2 O 3 ); as a protective member for plasma etching resistance in the internal coating of a semiconductor device or a semiconductor cavity, such as yttrium oxide (Y 2 O 3 ), yttrium aluminum garnet (YAG).

本發明中，半導體製程零配件的質變檢測系統1主要係利用拉曼光譜儀11及和拉曼光譜儀11匹配的光學檢測單元12對待測的半導體製程零配件2進行質變檢測，其中拉曼光譜儀11透過光學檢測單元12來進行光投射。一實施例中，光學檢測單元12耦接至拉曼光譜儀11，拉曼光譜儀11和拉曼光譜資料庫單元14均耦接至控制運算單元13。In the present invention, the qualitative change detection system 1 of semiconductor process parts mainly uses the Raman spectrometer 11 and the optical detection unit 12 matched with the Raman spectrometer 11 to perform qualitative change detection of the semiconductor process parts 2 to be tested, wherein the Raman spectrometer 11 transmits The optical detection unit 12 performs light projection. In one embodiment, the optical detection unit 12 is coupled to the Raman spectrometer 11, and the Raman spectrometer 11 and the Raman spectrum database unit 14 are both coupled to the control computing unit 13.

請繼續參照圖1，一實施例中，拉曼光譜儀11具有一第一光耦接埠111，拉曼光譜儀11利用第一光耦接埠111出射一光束，例如是雷射光，經過光學檢測單元12後投射在一待測的半導體製程零配件2上，使待測的半導體製程零配件2激發出散射光，進而對散射光的拉曼光譜進行量測。光學檢測單元12具有一第二光耦接埠121及相對於第二光耦接埠121的一光投射埠122，第二光耦接埠121於檢測進行時將耦接至拉曼光譜儀11的第一光耦接埠111，光投射埠122於檢測進行時將面向待檢測的半導體製程零配件2以投射出來自拉曼光譜儀11的出射光束。上述的耦接包含直接連接和間接連接。一實施例中，光學檢測單元12上可具有兩束光纖，其中一束光纖用來引導來自拉曼光譜儀11的出射光束經光投射埠122後投射在待測的半導體製程零配件2的目標區域A上，另一束光纖則用來引導自待測的半導體製程零配件2的目標區域A激發的帶有第一拉曼光譜信號的拉曼散射光(Raman Scattering Light)經光投射埠122傳回至拉曼光譜儀11。這裡的目標區域A是指來自拉曼光譜儀11的出射光束經光學檢測單元12投射在待測的半導體製程零配件2上的有效投射區域。一實施例中，在此區域內的投射光為一個有限區域的圓形光點。Please continue to refer to FIG. 1. In one embodiment, the Raman spectrometer 11 has a first optical coupling port 111, and the Raman spectrometer 11 uses the first optical coupling port 111 to emit a light beam, such as laser light, which passes through the optical detection unit After 12 is projected on a semiconductor process component 2 to be tested, the semiconductor process component 2 to be tested excites scattered light, and then the Raman spectrum of the scattered light is measured. The optical detection unit 12 has a second light coupling port 121 and a light projection port 122 opposite to the second light coupling port 121. The second light coupling port 121 will be coupled to the Raman spectrometer 11 during detection. The first light coupling port 111 and the light projection port 122 will face the semiconductor process component 2 to be tested to project the outgoing beam from the Raman spectrometer 11 when the inspection is in progress. The aforementioned coupling includes direct connection and indirect connection. In one embodiment, the optical detection unit 12 may have two optical fibers, one of which is used to guide the outgoing light beam from the Raman spectrometer 11 to be projected on the target area of the semiconductor process component 2 to be tested through the light projection port 122 On A, another optical fiber is used to guide the Raman Scattering Light with the first Raman spectrum signal excited from the target area A of the semiconductor process component 2 to be tested, and pass through the light projection port 122. Back to Raman spectrometer 11. The target area A here refers to the effective projection area of the emitted light beam from the Raman spectrometer 11 projected on the semiconductor process component 2 to be measured through the optical detection unit 12. In one embodiment, the projected light in this area is a circular light spot in a limited area.

請繼續參照圖1，一實施例中，拉曼光譜資料庫單元14耦接至控制運算單元13，拉曼光譜資料庫單元14中已儲存有對應於待測的半導體製程零配件2之多個已知使用時數例如50、100、150…500小時或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態或質變參數(例如用以表示質變程度的質變百分比)之多個第二拉曼光譜信號。Please continue to refer to FIG. 1. In one embodiment, the Raman spectrum database unit 14 is coupled to the control arithmetic unit 13, and the Raman spectrum database unit 14 has stored a plurality of components corresponding to the semiconductor process parts 2 to be tested Known use hours such as 50, 100, 150...500 hours or multiple known materials or multiple known material compounds or multiple known material qualitative change states or qualitative change parameters (for example, the percentage of qualitative change used to indicate the degree of qualitative change) The multiple second Raman spectrum signals.

圖2是一系統架構圖，顯示圖1之半導體製程零配件的質變檢測系統之各單元之間的信號傳送關係。請同時參照圖1及圖2，一實施例中，控制運算單元13耦接至拉曼光譜儀11及拉曼光譜資料庫單元14，拉曼光譜儀11經由光學檢測單元12接收，來自待測的半導體製程零配件2的目標區域A激發的第一拉曼光譜信號10及自拉曼光譜資料庫單元14取得多個對應於待測的半導體製程零配件2之多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的第二拉曼光譜信號20，以及比較第一拉曼光譜信號10及這些第二拉曼光譜信號20的閾值(threshold)後輸出關聯於待測的半導體製程零配件2的質變狀態或材料成分或化合物成分，例如使用時數或材料質變參數是否已屆臨界值，的判斷信號30。另一實施例中，每次所測得的第一拉曼光譜信號10可進一步透過控制運算單元13輸入至拉曼光譜資料庫單元14，讓每次測得的第一拉曼光譜信號10成為拉曼光譜資料庫單元14中的第二拉曼光譜信號20其中之一。此外，待測的半導體製程零配件2的包含但不限於當前使用時數或當前材料的質變參數(例如質變百分比)或當前材料的拉曼光譜或當前材料化合物的拉曼光譜的資料40可以其他方式輸入至拉曼光譜資料庫單元14。如此一來，可藉以累積拉曼光譜資料庫單元14中的拉曼光譜資料筆數。FIG. 2 is a system architecture diagram showing the signal transmission relationship between the units of the qualitative change detection system for semiconductor process parts of FIG. 1. 1 and 2 at the same time, in one embodiment, the control computing unit 13 is coupled to the Raman spectrometer 11 and the Raman spectrum database unit 14. The Raman spectrometer 11 is received by the optical detection unit 12 from the semiconductor to be tested The first Raman spectrum signal 10 excited by the target area A of the process component 2 and a plurality of known usage hours or multiples corresponding to the semiconductor process component 2 to be tested are obtained from the Raman spectrum database unit 14 The second Raman spectrum signal 20 of a known material or a plurality of known material compounds or a qualitative change state of a plurality of known materials, and the threshold value of comparing the first Raman spectrum signal 10 and these second Raman spectrum signals 20 ) And then output a judgment signal 30 related to the qualitative change state or material composition or compound composition of the semiconductor process component 2 to be tested, such as the use hours or whether the material qualitative change parameter has reached a critical value. In another embodiment, the first Raman spectrum signal 10 measured each time can be further input to the Raman spectrum database unit 14 through the control calculation unit 13, so that the first Raman spectrum signal 10 measured each time becomes One of the second Raman spectrum signals 20 in the Raman spectrum database unit 14. In addition, the data 40 of the semiconductor process component 2 to be tested including but not limited to the current hours of use or the qualitative change parameters of the current material (such as the percentage of qualitative change) or the Raman spectrum of the current material or the Raman spectrum of the current material compound may be other The method is input to the Raman spectrum database unit 14. In this way, the number of Raman spectrum data in the Raman spectrum database unit 14 can be accumulated.

請繼續同時參照圖1及圖2，另一實施態樣中，半導體製程零配件的質變檢測系統1還具有一顯示單元15，一實施例中，顯示單元15耦接至控制運算單元13，用以接受控制運算單元13輸出的判斷信號30，並基於判斷信號30顯示關聯於待測的半導體製程零配件2的質變狀態的判斷結果，例如待測的半導體製程零配件2尚可使用、待測的半導體製程零配件2不應使用、待測的半導體製程零配件2的可使用時數(例如還剩100小時)、或待測的半導體製程零配件2的質變百分比、或待測的半導體製程零配件2的材料成分、或待測的半導體製程零配件2的化合物成分。顯示單元15可以是任何已知的顯示裝置例如是LCD顯示器或LED顯示器，本發明不在此設限。Please continue to refer to FIGS. 1 and 2 at the same time. In another embodiment, the qualitative change detection system 1 for semiconductor manufacturing process parts further has a display unit 15. In one embodiment, the display unit 15 is coupled to the control computing unit 13 for To receive the judgment signal 30 output by the control computing unit 13, and display the judgment result related to the qualitative change state of the semiconductor process part 2 to be tested based on the judgment signal 30. For example, the semiconductor process part 2 to be tested is still usable and ready to be tested. The semiconductor process parts 2 should not be used, the usable hours of the semiconductor process parts 2 to be tested (for example, 100 hours are left), or the qualitative change percentage of the semiconductor process parts 2 to be tested, or the semiconductor process parts to be tested The material composition of the part 2 or the compound composition of the semiconductor process part 2 to be tested. The display unit 15 may be any known display device such as an LCD display or an LED display, and the present invention is not limited here.

圖3是一平面示意圖，顯示一待測的半導體製程零配件在本發明一實施例之半導體製程零配件的質變檢測系統的檢測下的多個目標區域。請參照圖1及圖3，本發明中，待測的半導體製程零配件2的尺寸可大可小而未設限，但投射在待測的半導體製程零配件2的目標區域A的投射光大小取決於光學檢測單元12的光投射埠122的口徑及光學檢測單元12可調整的聚焦距離。當待測的半導體製程零配件2上的待測區域21的尺寸遠大於光投射埠122的口徑時，就會需要實施多個如圖3中的分散的目標區域A1、A2、A3的檢測來確保檢測結果的有效性。目標區域的個數的決定和待測區域21的大小有關，隨著待測區域21的增大，可能需要增加分散的目標區域的個數。如待測區域21小於光投射埠122的口徑時，通常只需要一個目標區域已足。所稱的待測區域21是指待測的半導體製程零配件2上出現質變機率最高的區域，例如是在半導體製程中通常被施以電漿蝕刻的區域。依照實際的需求而定，圖3所示的目標區域A1、A2、A3的區域大小可以相同或不同，較佳為相同。FIG. 3 is a schematic plan view showing multiple target regions of a semiconductor process component to be tested under the inspection of the semiconductor process component qualitative change detection system according to an embodiment of the present invention. 1 and 3, in the present invention, the size of the semiconductor process part 2 to be tested can be large or small without limitation, but the size of the projected light projected on the target area A of the semiconductor process part 2 to be tested It depends on the aperture of the light projection port 122 of the optical detection unit 12 and the adjustable focusing distance of the optical detection unit 12. When the size of the area 21 to be tested on the semiconductor process component 2 to be tested is much larger than the aperture of the light projection port 122, it will be necessary to implement multiple detections of the scattered target areas A1, A2, A3 as shown in FIG. Ensure the validity of the test results. The determination of the number of target areas is related to the size of the area to be measured 21. As the area to be measured 21 increases, the number of scattered target areas may need to be increased. If the area to be measured 21 is smaller than the aperture of the light projection port 122, usually only one target area is sufficient. The area to be tested 21 refers to the area with the highest probability of qualitative change on the semiconductor process component 2 to be tested, for example, an area that is usually etched by plasma during the semiconductor process. According to actual needs, the area sizes of the target areas A1, A2, and A3 shown in FIG. 3 may be the same or different, and preferably the same.

圖4是一流程圖，顯示本發明一實施例之半導體製程零配件的質變檢測方法。請參照圖4，一實施例中，本發明一實施例之半導體製程零配件的質變檢測方法包含下列步驟，這些步驟的實施無需依照下列的描述順序，只要能達成本發明的目的，可變動實施順序。FIG. 4 is a flowchart showing a method for detecting qualitative change of a semiconductor process component according to an embodiment of the present invention. Please refer to FIG. 4, in one embodiment, the method for detecting qualitative change of semiconductor process parts of an embodiment of the present invention includes the following steps. The implementation of these steps does not need to follow the following description sequence, as long as the purpose of the invention can be achieved, the implementation can be modified order.

步驟401：提供一拉曼光譜儀。一實施例中，如圖1所示，提供拉曼光譜儀11。Step 401: Provide a Raman spectrometer. In one embodiment, as shown in FIG. 1, a Raman spectrometer 11 is provided.

步驟403：耦接一和拉曼光譜儀匹配的光學檢測單元至拉曼光譜儀。一實施例中，如圖1所示，耦接光學檢測單元12至拉曼光譜儀11，光學檢測單元12具有一第二光耦接埠121及相對於第二光耦接埠121的一光投射埠122，第二光耦接埠121耦接至拉曼光譜儀11的第一光耦接埠111，光投射埠122面向待檢測的半導體製程零配件2。Step 403: Couple an optical detection unit matching the Raman spectrometer to the Raman spectrometer. In one embodiment, as shown in FIG. 1, the optical detection unit 12 is coupled to the Raman spectrometer 11. The optical detection unit 12 has a second light coupling port 121 and a light projection relative to the second light coupling port 121 Port 122, the second light coupling port 121 is coupled to the first light coupling port 111 of the Raman spectrometer 11, and the light projection port 122 faces the semiconductor process component 2 to be inspected.

步驟405：耦接一和拉曼光譜儀匹配的控制運算單元至拉曼光譜儀。一實施例中，如圖1所示，耦接控制運算單元13至拉曼光譜儀11。Step 405: Couple a control arithmetic unit matching the Raman spectrometer to the Raman spectrometer. In an embodiment, as shown in FIG. 1, the control computing unit 13 is coupled to the Raman spectrometer 11.

步驟407：耦接一儲存有待測的半導體製程零配件之對應多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的多個參照用拉曼光譜信號的拉曼光譜資料庫單元至控制運算單元。一實施例中，如圖1及圖2所示，耦接拉曼光譜資料庫單元14至控制運算單元13，拉曼光譜資料庫單元14儲存有各種半導體製程零配件之多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的多個參照用拉曼光譜信號，特別是儲存有待測的半導體製程零配件2之對應多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的多個參照用拉曼光譜信號20。Step 407: Couple a plurality of references corresponding to a plurality of known use hours or a plurality of known materials or a plurality of known material compounds or a plurality of known material's qualitative change states stored in a semiconductor process component to be tested Raman spectrum database unit using Raman spectrum signal to control arithmetic unit. In one embodiment, as shown in FIG. 1 and FIG. 2, the Raman spectrum database unit 14 is coupled to the control operation unit 13. The Raman spectrum database unit 14 stores a plurality of known use times of various semiconductor process parts Several or multiple known materials or multiple known material compounds or multiple reference Raman spectroscopy signals of the qualitative change state of multiple known materials, especially for the semiconductor process parts 2 to be tested corresponding to multiple A plurality of reference Raman spectroscopy signals 20 of known use hours or a plurality of known materials or a plurality of known material compounds or a qualitative change state of a plurality of known materials.

步驟409：以光學檢測單元檢測待測的半導體製程零配件。一實施例中，如圖1及圖2所示，拉曼光譜儀11利用第一光耦接埠111出射一光束，例如是雷射光，經過光學檢測單元12後投射在一待測的半導體製程零配件2上，使待測的半導體製程零配件2激發出散射光，進而對散射光的拉曼光譜(Raman Spectra)進行量測，來自拉曼光譜儀11的出射光束經光投射埠122後投射在待測的半導體製程零配件2的目標區域A上，而來自待測的半導體製程零配件2的目標區域A激發的帶有第一拉曼光譜信號的拉曼散射光經光投射埠122傳回至拉曼光譜儀11。Step 409: Detect the semiconductor process parts to be tested with an optical detection unit. In one embodiment, as shown in FIGS. 1 and 2, the Raman spectrometer 11 uses the first optical coupling port 111 to emit a light beam, such as a laser light, which passes through the optical detection unit 12 and is projected onto a semiconductor process zero to be measured. On the accessory 2, the semiconductor process component 2 to be measured is excited to emit scattered light, and then the Raman Spectra of the scattered light is measured. The outgoing beam from the Raman spectrometer 11 is projected on the light projection port 122 On the target area A of the semiconductor process component 2 to be tested, and the Raman scattered light with the first Raman spectrum signal excited from the target area A of the semiconductor process component 2 to be tested is transmitted back through the light projection port 122 To Raman spectrometer 11.

步驟411：比較待測的半導體製程零配件激發的拉曼光譜信號和自拉曼光譜資料庫單元中取得的待測的半導體製程零配件的多個參照用拉曼光譜信號的閾值。一實施例中，如圖1及圖2所示，控制運算單元13自拉曼光譜儀11接收自待測的半導體製程零配件2的目標區域A激發的第一拉曼光譜信號10，且控制運算單元13自拉曼光譜資料庫單元14取得多個第二拉曼光譜信號20。之後，控制運算單元13比較第一拉曼光譜信號10及多個第二拉曼光譜信號20的閾值。Step 411: Compare the Raman spectrum signal excited by the semiconductor process component under test with the threshold values of multiple reference Raman spectral signals of the semiconductor process component under test obtained from the Raman spectrum database unit. In one embodiment, as shown in FIGS. 1 and 2, the control computing unit 13 receives from the Raman spectrometer 11 the first Raman spectrum signal 10 excited from the target area A of the semiconductor process component 2 to be tested, and controls the computing The unit 13 obtains a plurality of second Raman spectrum signals 20 from the Raman spectrum database unit 14. After that, the control computing unit 13 compares the threshold values of the first Raman spectrum signal 10 and the plurality of second Raman spectrum signals 20.

步驟413：判斷待測的半導體製程零配件的質變狀態。如圖1及圖2所示，控制運算單元13比較第一拉曼光譜信號10及多個第二拉曼光譜信號20的閾值後輸出關聯於待測的半導體製程零配件2的質變狀態、或材料成分、或化合物成分的判斷信號30。例如，當第一拉曼光譜信號10低於第二拉曼光譜信號20的閾值時，判斷信號30是關聯於待測的半導體製程零配件2尚可使用的狀態或待測的半導體製程零配件2的可使用時數(例如還剩100小時)或待測的半導體製程零配件2的質變百分比；當第一拉曼光譜信號10高於第二拉曼光譜信號20的閾值時，判斷信號30是關聯於待測的半導體製程零配件2不應使用的狀態或待測的半導體製程零配件2的質變百分比。Step 413: Determine the qualitative change state of the semiconductor process component to be tested. As shown in FIGS. 1 and 2, the control computing unit 13 compares the threshold values of the first Raman spectrum signal 10 and the plurality of second Raman spectrum signals 20 and then outputs the qualitative change state associated with the semiconductor process component 2 to be tested, or The judgment signal 30 of the material component or the compound component. For example, when the first Raman spectrum signal 10 is lower than the threshold of the second Raman spectrum signal 20, the judgment signal 30 is related to the usable state of the semiconductor process component 2 to be tested or the semiconductor process component to be tested 2 available hours (for example, 100 hours left) or the qualitative change percentage of the semiconductor process component 2 to be tested; when the first Raman spectrum signal 10 is higher than the threshold of the second Raman spectrum signal 20, the judgment signal 30 It is related to the state that the semiconductor process part 2 to be tested should not be used or the qualitative change percentage of the semiconductor process part 2 to be tested.

圖5是一流程圖，顯示本發明另一實施例之半導體製程零配件的質變檢測方法。請參照圖5，另一實施例中，半導體製程零配件的質變檢測方法除了圖4的步驟401至413外，還包含步驟415：將待測的半導體製程零配件的當前使用時數或當前材料的拉曼光譜或當前材料化合物的拉曼光譜或當前材料的質變參數或當前激發的拉曼光譜信號輸入至拉曼光譜資料庫單元。一實施例中，如圖1及圖2所示，每次所測得的第一拉曼光譜信號10可進一步透過控制運算單元13輸入至拉曼光譜資料庫單元14，讓每次測得的第一拉曼光譜信號10成為拉曼光譜資料庫單元14中的第二拉曼光譜信號20其中之一。此外，待測的半導體製程零配件2的包含但不限於當前使用時數或當前材料的拉曼光譜或當前材料的化合物的拉曼光譜或當前材料的質變參數(例如質變百分比)的資料40可以其他方式輸入至拉曼光譜資料庫單元14。如此一來，藉以累積拉曼光譜資料庫單元14的拉曼光譜資料筆數。需注意的是，以上的描述順序僅為例示，步驟415並非一定要在步驟401至413均實施的情況下才實施，例如步驟415可在尚未實施步驟413的情況下實施或和步驟413同時實施。FIG. 5 is a flowchart showing a method for detecting qualitative change of a semiconductor process component according to another embodiment of the present invention. 5, in another embodiment, in addition to steps 401 to 413 of FIG. 4, the method for detecting the qualitative change of semiconductor process parts further includes step 415: the current use hours or current materials of the semiconductor process parts to be tested The Raman spectrum of the current material compound or the qualitative change parameter of the current material or the current excited Raman spectrum signal is input to the Raman spectrum database unit. In one embodiment, as shown in FIGS. 1 and 2, the first Raman spectrum signal 10 measured each time can be further input to the Raman spectrum database unit 14 through the control computing unit 13, so that the measured The first Raman spectrum signal 10 becomes one of the second Raman spectrum signals 20 in the Raman spectrum database unit 14. In addition, the data 40 of the semiconductor process component 2 to be tested including but not limited to the current hours of use or the Raman spectrum of the current material or the Raman spectrum of the compound of the current material or the qualitative change parameter (such as the percentage of qualitative change) of the current material can be Input to the Raman spectrum database unit 14 in other ways. In this way, the number of Raman spectrum data of the Raman spectrum database unit 14 is accumulated. It should be noted that the above description sequence is only an example, and step 415 does not have to be implemented when all steps 401 to 413 are implemented. For example, step 415 can be implemented before step 413 has been implemented or at the same time as step 413. .

綜上所述，依照本發明各實施例所描述的半導體製程零配件的質變檢測系統，利用和拉曼光譜儀搭配匹配的光學檢測單元、控制運算單元及拉曼光譜資料庫單元，除了可準確且有效檢測出經歷一定使用時數之半導體製程零配件的質變狀態、經歷不同材料質變之半導體製程零配件的質變狀態、具有不同材料或不同材料化合物之半導體製程零配件的質變狀態、半導體製程零配件的材料成分、半導體製程零配件上的材料化合物外，還可進一步將檢測結果、材料成分的拉曼光譜、材料化合物的拉曼光譜及材料質變參數輸入至拉曼光譜資料庫單元中作為下次檢測的比較及判斷參考，進而在拉曼光譜資料庫單元中資料筆數的增加之下，提高檢測結果的準確度。因此，本發明所提出的半導體製程零配件的質變檢測系統，可以精準判斷出半導體製程零配件的好壞差異，滿足高階製程需求。To sum up, according to the qualitative change detection system for semiconductor process parts described in the embodiments of the present invention, the optical detection unit, the control computing unit and the Raman spectrum database unit matched with the Raman spectrometer are used, in addition to being accurate and Effectively detect the qualitative change state of semiconductor process parts that have experienced a certain number of hours of use, the qualitative change state of semiconductor process parts that have undergone qualitative changes of different materials, the qualitative change state of semiconductor process parts that have different materials or compounds of different materials, and semiconductor process parts In addition to the material composition of the material and the material compound on the semiconductor process parts, the detection result, the Raman spectrum of the material composition, the Raman spectrum of the material compound and the material qualitative change parameters can be further input into the Raman spectrum database unit as the next time The comparison and judgment reference of the detection, and the increase of the number of data in the Raman spectrum database unit, improves the accuracy of the detection result. Therefore, the qualitative change detection system for semiconductor process parts proposed in the present invention can accurately determine the difference between the quality of semiconductor process parts and meet the needs of high-end manufacturing processes.

1:半導體製程零配件的質變檢測系統 11:拉曼光譜儀 111:第一光耦接埠 12:光學檢測單元 121:第二光耦接埠 122:光投射埠 13:控制運算單元 14:拉曼光譜資料庫單元 15:顯示單元 2:待測的半導體製程零配件 21:待測區域 10:第一拉曼光譜信號 20:第二拉曼光譜信號 30:判斷信號 40:資料 A,A1,A2,A3:目標區域 401~415:步驟1: Quality change detection system for semiconductor process parts 11: Raman spectrometer 111: The first optical coupling port 12: Optical detection unit 121: second optical coupling port 122: light projection port 13: Control arithmetic unit 14: Raman Spectroscopy Database Unit 15: display unit 2: Semiconductor process parts to be tested 21: Area to be tested 10: The first Raman spectrum signal 20: Second Raman spectrum signal 30: judgment signal 40: Information A, A1, A2, A3: target area 401~415: steps

圖1是一系統架構圖，顯示本發明一實施例之半導體製程零配件的質變檢測系統。 圖2是一系統架構圖，顯示圖1之半導體製程零配件的質變檢測系統之各單元之間的信號傳送關係。 圖3是一平面示意圖，顯示一待測的半導體製程零配件在本發明一實施例之半導體製程零配件的質變檢測系統的檢測下的多個目標區域。 圖4是一流程圖，顯示本發明一實施例之半導體製程零配件的質變檢測方法。 圖5是一流程圖，顯示本發明另一實施例之半導體製程零配件的質變檢測方法。 FIG. 1 is a system architecture diagram showing a qualitative change detection system for semiconductor process parts according to an embodiment of the present invention. FIG. 2 is a system architecture diagram showing the signal transmission relationship between the units of the qualitative change detection system for semiconductor process parts of FIG. 1. 3 is a schematic plan view showing multiple target areas of a semiconductor process component to be tested under the inspection of the semiconductor process component qualitative change detection system according to an embodiment of the present invention. FIG. 4 is a flowchart showing a method for detecting qualitative change of a semiconductor process component according to an embodiment of the present invention. FIG. 5 is a flowchart showing a method for detecting qualitative change of a semiconductor process component according to another embodiment of the present invention.

1:半導體製程零配件的質變檢測系統 1: Quality change detection system for semiconductor process parts

11:拉曼光譜儀 11: Raman spectrometer

111:第一光耦接埠 111: The first optical coupling port

12:光學檢測單元 12: Optical detection unit

121:第二光耦接埠 121: second optical coupling port

122:光投射埠 122: light projection port

13:控制運算單元 13: Control arithmetic unit

14:拉曼光譜資料庫單元 14: Raman Spectroscopy Database Unit

15:顯示單元 15: display unit

2:待測的半導體製程零配件 2: Semiconductor process parts to be tested

A:目標區域 A: Target area

Claims (10)

一種半導體製程零配件的質變檢測系統，包含： 一拉曼光譜儀； 一光學檢測單元，耦接至該拉曼光譜儀，來自該拉曼光譜儀的一出射光束透過該光學檢測單元投射至一待測的半導體製程零配件的至少一目標區域上，且自至少該目標區域激發的帶有第一拉曼光譜信號的拉曼散射光透過該光學檢測單元傳回至該拉曼光譜儀； 一拉曼光譜資料庫單元，儲存有對應於該待測的半導體製程零配件的複數已知使用時數或複數已知材料或複數已知材料化合物或複數已知材料的質變狀態的複數第二拉曼光譜信號；及 一控制運算單元，耦接至該拉曼光譜儀及該拉曼光譜資料庫單元且自該拉曼光譜儀接收該第一拉曼光譜信號及自該拉曼光譜資料庫單元取得該些第二拉曼光譜信號，該控制運算單元比較該第一拉曼光譜信號及該些第二拉曼光譜信號的閾值後輸出關聯於該待測的半導體製程零配件的質變狀態的一判斷信號。 A qualitative change detection system for semiconductor process parts, including: A Raman spectrometer; An optical detection unit is coupled to the Raman spectrometer, and an output beam from the Raman spectrometer passes through the optical detection unit and is projected onto at least one target area of a semiconductor process component to be tested, and from at least the target area The excited Raman scattered light with the first Raman spectrum signal is transmitted back to the Raman spectrometer through the optical detection unit; A Raman spectroscopy database unit, storing a plurality of known use hours or a plurality of known materials or a plurality of known material compounds or a plurality of known material qualitative change states corresponding to the semiconductor process component to be tested Raman spectrum signal; and A control arithmetic unit, coupled to the Raman spectrometer and the Raman spectrum database unit, and receives the first Raman spectrum signal from the Raman spectrometer and obtains the second Raman spectrum from the Raman spectrum database unit The control computing unit compares the threshold values of the first Raman spectrum signal and the second Raman spectrum signal and outputs a judgment signal related to the qualitative change state of the semiconductor process component under test. 如請求項1之檢測系統，其中該待測的半導體製程零配件是由無機材料製成。Such as the inspection system of claim 1, wherein the semiconductor process parts to be tested are made of inorganic materials. 如請求項2之檢測系統，其中該無機材料是矽、石英、氧化鋁、氧化釔及釔鋁石榴石其中之一。Such as the detection system of claim 2, wherein the inorganic material is one of silicon, quartz, alumina, yttria and yttrium aluminum garnet. 如請求項1之檢測系統，更包含一顯示單元，其耦接至該控制運算單元，用以接收該判斷信號且基於該判斷信號顯示關聯於該待測的半導體製程零配件的質變狀態的判斷結果。For example, the detection system of claim 1, further comprising a display unit, which is coupled to the control operation unit, for receiving the determination signal and displaying the determination related to the qualitative change state of the semiconductor process component under test based on the determination signal result. 如請求項4之檢測系統，其中關聯於該待測的半導體製程零配件的質變狀態的該判斷結果包含該待測的半導體製程零配件尚可使用、該待測的半導體製程零配件不應使用、該待測的半導體製程零配件的可使用時數、該待測的半導體製程零配件的質變百分比、該待測的半導體製程零配件的化合物成分、該待測的半導體製程零配件的材料成分其中之一。For example, the detection system of claim 4, wherein the judgment result related to the qualitative change state of the semiconductor process part to be tested includes that the semiconductor process part to be tested is still usable, and the semiconductor process part to be tested should not be used , The usable hours of the semiconductor process part to be tested, the percentage of qualitative change of the semiconductor process part to be tested, the compound composition of the semiconductor process part to be tested, and the material composition of the semiconductor process part to be tested one of them. 如請求項1之檢測系統，其中該待測的半導體製程零配件的該目標區域的個數為二個以上。Such as the inspection system of claim 1, wherein the number of the target area of the semiconductor process component to be tested is more than two. 如請求項1之檢測系統，其中該目標區域內的投射光為一光點。Such as the detection system of claim 1, wherein the projected light in the target area is a light spot. 一種半導體製程零配件的質變檢測方法，包含： 提供一拉曼光譜儀； 耦接一和該拉曼光譜儀匹配的光學檢測單元至該拉曼光譜儀； 耦接一和該拉曼光譜儀匹配的控制運算單元至該拉曼光譜儀； 耦接一儲存有待測的半導體製程零配件之對應多個已知使用時數或多個已知材料或多個已知材料化合物或多個已知材料之質變狀態的多個參照用拉曼光譜信號的拉曼光譜資料庫單元至該控制運算單元； 以該光學檢測單元檢測該待測的半導體製程零配件；及 比較該待測的半導體製程零配件激發的拉曼光譜信號和自該拉曼光譜資料庫單元中取得的該待測的半導體製程零配件的該些參照用拉曼光譜信號的閾值。 A method for qualitative change detection of semiconductor process parts, including: Provide a Raman spectrometer; Coupling an optical detection unit matched with the Raman spectrometer to the Raman spectrometer; Coupling a control arithmetic unit matched with the Raman spectrometer to the Raman spectrometer; Coupled to a plurality of reference Ramans corresponding to a plurality of known use hours or a plurality of known materials or a plurality of known material compounds or a qualitative change state of a plurality of known materials stored in a semiconductor process component to be tested Raman spectrum database unit of the spectral signal to the control arithmetic unit; Use the optical detection unit to detect the semiconductor process parts to be tested; and The Raman spectrum signal excited by the semiconductor process component to be tested is compared with the threshold values of the reference Raman spectrum signals of the semiconductor process component to be tested obtained from the Raman spectrum database unit. 如請求項8之檢測方法，更包含： 判斷該待測的半導體製程零配件的質變狀態。 For example, the detection method of claim 8, including: Determine the qualitative change state of the semiconductor process component to be tested. 如請求項8之檢測方法，更包含： 將該待測的半導體製程零配件的當前使用時數或當前材料的拉曼光譜或當前材料化合物的拉曼光譜或當前材料的質變參數或當前激發的拉曼光譜信號輸入至該拉曼光譜資料庫單元。 For example, the detection method of claim 8, including: Input the current use hours of the semiconductor process component to be tested or the Raman spectrum of the current material or the Raman spectrum of the current material compound or the qualitative change parameter of the current material or the current excited Raman spectrum signal into the Raman spectrum data Library unit.
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