TWI715652B - Film for forming protective film and composite sheet for forming protective film - Google Patents

Film for forming protective film and composite sheet for forming protective film Download PDF

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TWI715652B
TWI715652B TW105134758A TW105134758A TWI715652B TW I715652 B TWI715652 B TW I715652B TW 105134758 A TW105134758 A TW 105134758A TW 105134758 A TW105134758 A TW 105134758A TW I715652 B TWI715652 B TW I715652B
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protective film
film
forming
mass
semiconductor wafer
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TW105134758A
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TW201726749A (en
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稻男洋一
小橋力也
古野健太
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日商琳得科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • H01L23/296Organo-silicon compounds

Abstract

A film for forming a protective film which includes an energy ray curable compound (B) for forming the protective film having the following properties on the back surface of a semiconductor wafer or a semiconductor chip: when the film for forming the protective film is cured to form a cured product by irradiation with the energy ray, the cured product has no less than 500 MPa young's modulus and no less than 8% fracture elongation.

Description

保護膜形成用膜以及保護膜形成用複合片 Film for forming protective film and composite sheet for forming protective film

本發明係關於一種用以於半導體晶圓或半導體晶片的背面形成保護膜之保護膜形成用膜,以及具備前述保護膜形成用膜之保護膜形成用複合片。 The present invention relates to a protective film forming film for forming a protective film on the back surface of a semiconductor wafer or semiconductor wafer, and a composite sheet for forming a protective film provided with the protective film forming film.

本申請案基於2015年10月29日在日本提出申請之日本特願2015-212845號而主張優先權,並將其內容引用至本文中。 This application claims priority based on Japanese Patent Application No. 2015-212845 for which an application was filed in Japan on October 29, 2015, and the content is cited herein.

近年來,業界應用被稱為所謂倒裝法(face down)方式之安裝方法製造半導體裝置。倒裝法方式中,使用電路面上具有凸塊等電極之半導體晶片,將前述電極與基板接合。因此,存在半導體晶片的與電路面為相反側之背面裸露之情況。 In recent years, the industry has applied a mounting method called a so-called face down method to manufacture semiconductor devices. In the flip-chip method, a semiconductor wafer having electrodes such as bumps on the circuit surface is used to bond the electrodes to the substrate. Therefore, the back surface of the semiconductor chip opposite to the circuit surface may be exposed.

有時於該裸露之半導體晶片背面形成由有機材料構成之樹脂膜作為保護膜,形成為附有保護膜之半導體晶片後組入至半導體裝置中。利用保護膜之目的在於:防止於 切割步驟或封裝之後半導體晶片產生龜裂。 Sometimes a resin film made of an organic material is formed as a protective film on the back surface of the exposed semiconductor chip, which is formed into a semiconductor chip with a protective film and then incorporated into a semiconductor device. The purpose of using protective film is to prevent The semiconductor wafer is cracked after the dicing step or packaging.

為了形成此種保護膜,例如使用在支持片上具備保護膜形成用膜而成之保護膜形成用複合片。保護膜形成用複合片中,保護膜形成用膜具有形成保護膜之功能,進而可將支持片用作切割片,而可形成保護膜形成用膜與切割片成為一體之保護膜形成用複合片。 In order to form such a protective film, the composite sheet for protective film formation provided with the film for protective film formation on a support sheet is used, for example. Among the composite sheets for forming a protective film, the film for forming a protective film has the function of forming a protective film, and the support sheet can be used as a dicing sheet, and a composite sheet for forming a protective film can be formed in which the protective film forming film and the dicing sheet are integrated .

作為此種保護膜形成用複合片,迄今為止主要利用例如具備藉由加熱進行硬化而形成保護膜之保護膜形成用膜之保護膜形成用複合片。半導體晶圓例如在藉由保護膜形成用膜於其背面(與電極形成面為相反側之面)貼附保護膜形成用複合片之後被切割成半導體晶片。另外,在藉由加熱使保護膜形成用膜硬化而形成保護膜之後,於貼附有該保護膜之狀態下拾取該半導體晶片,或者在拾取貼附有保護膜形成用膜之狀態之半導體晶片之後,藉由加熱使保護膜形成用膜硬化而形成保護膜。 As such a composite sheet for forming a protective film, for example, a composite sheet for forming a protective film including a film for forming a protective film that is cured by heating to form a protective film has been mainly used so far. For example, a semiconductor wafer is diced into a semiconductor wafer after attaching a composite sheet for forming a protective film to the back surface (a surface opposite to the electrode forming surface) of the protective film forming film. In addition, after the protective film is hardened by heating to form the protective film, the semiconductor chip is picked up with the protective film attached, or the semiconductor chip with the protective film forming film attached is picked up After that, the protective film forming film is cured by heating to form a protective film.

但是,保護膜形成用膜之加熱硬化通常需要數小時左右之長時間,故期待能縮短硬化時間。針對該情況,業界在研究可藉由照射紫外線等能量線而硬化之保護膜形成用膜,並揭示有:硬化後之鉛筆硬度為5H以上,切割半導體晶圓時可抑制產生崩裂(chipping)之保護用膜(參照專利文獻1);可形成雷射標記辨識性、硬度、安裝可靠性 優異之保護膜之保護用膜(參照專利文獻2);可形成高硬度且對半導體晶片之密接性優異之保護膜之保護用膜(參照專利文獻3)。 However, heat curing of the protective film forming film usually takes a long time of several hours, so it is expected that the curing time can be shortened. In response to this situation, the industry is studying films for forming protective films that can be cured by irradiating energy rays such as ultraviolet rays, and it has been revealed that the pencil hardness after curing is 5H or more, which can suppress chipping when cutting semiconductor wafers. Protective film (refer to Patent Document 1); can form laser mark recognition, hardness, and installation reliability An excellent protective film (refer to Patent Document 2); a protective film that can form a protective film with high hardness and excellent adhesion to semiconductor wafers (refer to Patent Document 3).

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

專利文獻1:日本特開2009-147277號公報。 Patent Document 1: Japanese Patent Application Laid-Open No. 2009-147277.

專利文獻2:日本特開2009-138026號公報。 Patent Document 2: JP 2009-138026 A.

專利文獻3:日本特開2010-031183號公報。 Patent Document 3: JP 2010-031183 A.

但是,對於保護膜形成用膜,例如要求可形成對半導體晶圓或半導體晶片之保護作用高,另外即便暴露於大的溫度變化之下亦可維持高保護作用,且具有高可靠性之保護膜,以抑制產生裂痕或缺口,例如抑制半導體晶片的外緣部產生缺口,亦即抑制所謂崩裂。因此,基於上述觀點,可藉由照射能量線而硬化之先前的保護膜形成用膜仍有改善餘地。 However, for the formation of a protective film, for example, it is required to form a protective film that has high protective effect on semiconductor wafers or semiconductor wafers, and maintains high protective effect even when exposed to large temperature changes, and has high reliability. , In order to suppress the generation of cracks or notches, for example, to suppress the generation of notches in the outer edge of the semiconductor wafer, that is, to suppress the so-called cracking. Therefore, based on the above point of view, there is still room for improvement in the conventional protective film formation film that can be cured by irradiation with energy rays.

本發明係鑒於上述情況而成,本發明之課題在於提供一種保護膜形成用膜,及具備前述保護膜形成用膜之保護膜形成用複合片,前述保護膜形成用膜可形成對半導體晶圓或半導體晶片的背面之保護作用高,且具有高可靠性之 保護膜。 The present invention is made in view of the above circumstances. The subject of the present invention is to provide a protective film forming film and a protective film forming composite sheet provided with the protective film forming film. The protective film forming film can be formed on a semiconductor wafer Or the backside of the semiconductor chip has high protection and high reliability Protective film.

為了解決上述課題,本發明提供一種保護膜形成用膜,含有能量線硬化性化合物(B),用以於半導體晶圓或半導體晶片的背面形成保護膜,並且對前述保護膜形成用膜照射能量線而獲得之硬化物的楊氏模數為500MPa以上,斷裂伸長率為8%以上。 In order to solve the above-mentioned problems, the present invention provides a protective film forming film containing an energy-ray curable compound (B) for forming a protective film on the back surface of a semiconductor wafer or semiconductor wafer, and irradiating energy to the protective film forming film The cured product obtained by the wire has a Young's modulus of 500 MPa or more, and an elongation at break of 8% or more.

本發明之保護膜形成用膜較佳為相對於前述能量線硬化性化合物(B)的總含量,一分子中具有2個至4個能量線聚合性基之能量線硬化性化合物(B1)的總含量的比例為90質量%以上。 The film for forming a protective film of the present invention is preferably composed of an energy ray curable compound (B1) having 2 to 4 energy ray polymerizable groups in one molecule relative to the total content of the aforementioned energy ray curable compound (B) The ratio of the total content is 90% by mass or more.

另外,本發明提供一種保護膜形成用複合片,於支持片的一方的表面上具備前述保護膜形成用膜。 In addition, the present invention provides a composite sheet for forming a protective film, which is provided with the aforementioned film for forming a protective film on one surface of a support sheet.

亦即,本發明包含以下態樣。 That is, the present invention includes the following aspects.

[1]一種保護膜形成用膜,用以於半導體晶圓或半導體晶片的背面形成保護膜,含有能量線硬化性化合物(B),且具有以下特性:藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物時,前述硬化物的楊氏模數為500MPa以上,且斷裂伸長率為8%以上。 [1] A film for forming a protective film for forming a protective film on the back surface of a semiconductor wafer or a semiconductor wafer, containing an energy ray curable compound (B), and having the following characteristics: by irradiating energy ray, the protective film When the formation film is cured to form a cured product, the Young's modulus of the cured product is 500 MPa or more, and the elongation at break is 8% or more.

[2]如[1]所述之保護膜形成用膜,其中前述保護膜形成用膜中,一分子中具有2個至4個能量線聚合性基之能量線硬化性化合物(B1)的含量相對於前述能量線硬化性化 合物(B)的總質量為90質量%以上。 [2] The film for forming a protective film as described in [1], wherein in the film for forming a protective film, the content of an energy ray curable compound (B1) having 2 to 4 energy ray polymerizable groups per molecule Compared with the aforementioned energy ray hardening The total mass of the compound (B) is 90% by mass or more.

[3]一種保護膜形成用複合片,於支持片的一方的表面上具備如[1]或[2]所述之保護膜形成用膜。 [3] A composite sheet for forming a protective film comprising the film for forming a protective film as described in [1] or [2] on one surface of a support sheet.

根據本發明,提供一種保護膜形成用膜,及具備前述保護膜形成用膜之保護膜形成用複合片,前述保護膜形成用膜可形成對半導體晶圓或半導體晶片的背面之保護作用高,且具有高可靠性之保護膜。 According to the present invention, there is provided a film for forming a protective film and a composite sheet for forming a protective film provided with the film for forming the protective film. The film for forming a protective film can be formed to have a high protective effect on the back surface of a semiconductor wafer or a semiconductor wafer. And has a highly reliable protective film.

1A、1B、1C、1D、1E‧‧‧保護膜形成用複合片 1A, 1B, 1C, 1D, 1E‧‧‧Composite sheet for forming protective film

10‧‧‧支持片 10‧‧‧Support film

10a‧‧‧(支持片的)表面 10a‧‧‧(supporting film) surface

11‧‧‧基材 11‧‧‧Substrate

11a‧‧‧(基材的)表面 11a‧‧‧(of the substrate) surface

12‧‧‧黏著劑層 12‧‧‧Adhesive layer

12a‧‧‧(黏著劑層的)表面 12a‧‧‧(adhesive layer) surface

13、23‧‧‧保護膜形成用膜 13, 23‧‧‧Film for forming protective film

13a、23a‧‧‧(保護膜形成用膜的)表面 13a, 23a‧‧‧(The surface of the protective film forming film)

15‧‧‧剝離膜 15‧‧‧Peeling film

16‧‧‧治具用接著劑層 16‧‧‧Adhesive layer for fixture

16a‧‧‧(治具用接著劑層的)表面 16a‧‧‧(adhesive layer for jig) surface

圖1係以示意方式表示本發明之保護膜形成用複合片的一實施形態之剖面圖。 Fig. 1 is a cross-sectional view schematically showing one embodiment of the composite sheet for forming a protective film of the present invention.

圖2係以示意方式表示本發明之保護膜形成用複合片的另一實施形態之剖面圖。 Fig. 2 is a cross-sectional view schematically showing another embodiment of the composite sheet for forming a protective film of the present invention.

圖3係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 3 is a cross-sectional view schematically showing still another embodiment of the composite sheet for forming a protective film of the present invention.

圖4係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 4 is a cross-sectional view schematically showing yet another embodiment of the composite sheet for forming a protective film of the present invention.

圖5係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 5 is a cross-sectional view schematically showing still another embodiment of the composite sheet for forming a protective film of the present invention.

《保護膜形成用膜》 "Film for forming protective film"

本發明之保護膜形成用膜含有能量線硬化性化合物(B),用以於半導體晶圓或半導體晶片的背面形成保護膜,並且對前述保護膜形成用膜照射能量線而獲得之硬化物(亦即,保護膜)的楊氏模數為500MPa以上,斷裂伸長率為8%以上。亦即,本發明之保護膜形成用膜的另一方面含有能量線硬化性化合物(B),且具有以下特性:藉由照射能量線使前述保護膜形成用膜硬化而形成硬化物(保護膜)時,前述硬化物的楊氏模數為500MPa以上,且斷裂伸長率為8%以上。 The film for forming a protective film of the present invention contains an energy-ray curable compound (B) for forming a protective film on the back of a semiconductor wafer or semiconductor wafer, and the cured product obtained by irradiating the film for forming a protective film with energy rays ( That is, the Young's modulus of the protective film is 500 MPa or more, and the elongation at break is 8% or more. That is, another aspect of the film for forming a protective film of the present invention contains an energy-ray curable compound (B), and has the following characteristics: the film for forming a protective film is cured by irradiating energy rays to form a cured product (protective film) ), the Young's modulus of the hardened product is 500 MPa or more, and the elongation at break is 8% or more.

前述硬化物,亦即保護膜藉由使楊氏模數及斷裂伸長率為前述下限值以上,而對半導體晶圓或半導體晶片具有充分高的保護作用。例如,在對背面具備前述保護膜形成用膜或保護膜之半導體晶圓進行切割之情形時,抑制最終獲得之半導體晶片產生裂痕或缺口,例如抑制其外緣部產生缺口,亦即抑制所謂崩裂。另外,前述保護膜藉由使楊氏模數及斷裂伸長率為前述下限值以上,即便暴露於大的溫度變化之下亦可維持如上所述之高保護作用,具有高可靠性。例如,附有保護膜之半導體晶片雖然於進行安裝時被暴露於大的溫度變化之下,但即便於此種條件下,前述保護膜亦可維持高保護作用。 The cured product, that is, the protective film, has a sufficiently high protective effect on the semiconductor wafer or the semiconductor wafer by setting the Young's modulus and the elongation at break to be higher than the aforementioned lower limit. For example, when dicing a semiconductor wafer provided with the aforementioned protective film forming film or protective film on the back side, the resulting semiconductor wafer is prevented from being cracked or chipped, for example, chipping is suppressed at the outer edge, that is, so-called chipping is suppressed . In addition, by making the Young's modulus and elongation at break of the protective film above the aforementioned lower limit value, even if exposed to a large temperature change, it can maintain the high protective effect as described above, and has high reliability. For example, although a semiconductor chip with a protective film is exposed to large temperature changes during mounting, the protective film can maintain a high protective effect even under such conditions.

如此般,本發明之保護膜形成用膜亦可藉由照射能量線而形成保護作用及可靠性高的保護膜。 In this way, the film for forming a protective film of the present invention can also form a protective film with high protective effect and high reliability by irradiating energy rays.

前述保護膜形成用膜藉由含有能量線硬化性化合物 (B),可照射能量線而硬化,以形成保護膜。 The aforementioned protective film formation film contains an energy ray curable compound (B), it can be cured by irradiating energy rays to form a protective film.

本說明書中,所謂「能量線」表示電磁波或帶電粒子束中具有能量量子,作為其示例可列舉紫外線、電子束等。 In this specification, the term "energy line" means that an electromagnetic wave or a charged particle beam has energy quantum, and examples thereof include ultraviolet rays, electron beams, and the like.

紫外線例如可藉由使用高壓水銀燈、融合H型燈(fusion H lamp)、氙氣燈(xenon lamp)或發光二極體(Light Emitting Diode;LED)等作為紫外線源而進行照射。電子束可照射藉由電子束加速器等產生之電子束。 The ultraviolet light can be irradiated by using, for example, a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, or a light emitting diode (LED) as an ultraviolet source. The electron beam can be irradiated with an electron beam generated by an electron beam accelerator or the like.

能量線的照射量因能量線的種類而異,例如於為紫外線之情形時,照度較佳為50mWcm2至500mWcm2,光量較佳為200mJ/cm2至800mJ/cm2The irradiation amount of energy rays varies with the types of energy rays. For example, in the case of ultraviolet rays, the illuminance is preferably 50 mWcm 2 to 500 mWcm 2 , and the amount of light is preferably 200 mJ/cm 2 to 800 mJ/cm 2 .

前述保護膜形成用膜可使用含有用以構成該保護膜形成用膜之成分之保護膜形成用組成物形成,例如可藉由將前述保護膜形成用組成物塗敷於支持體的表面並加以乾燥而形成。保護膜形成用組成物中的於常溫不會氣化之成分彼此的含量比率通常與保護膜形成用膜的前述成分彼此的含量比率相同。再者,本說明書中,所謂「常溫」係指不特別冷或特別熱的溫度,亦即平常的溫度,例如可列舉15℃至25℃之溫度等。 The protective film formation film can be formed using a protective film formation composition containing the components used to form the protective film formation film. For example, the protective film formation composition can be applied to the surface of a support. Dry and form. The content ratio of the components that do not vaporize at room temperature in the protective film formation composition is usually the same as the content ratio of the aforementioned components of the protective film formation film. Furthermore, in this specification, the "normal temperature" refers to a temperature that is not particularly cold or particularly hot, that is, a normal temperature, for example, a temperature of 15°C to 25°C, etc.

前述支持體只要可維持保護膜形成用膜的形狀則無特別限定,例如可為僅用於形成保護膜形成用膜之支持體,亦可為在用於形成保護膜形成用膜之後,進而於與該保 護膜形成用膜積層之狀態下用於其他用途的目的之支持體。作為上述僅用於形成保護膜形成用膜之支持體,例如可列舉具有剝離處理面之剝離膜等。另外,作為在形成保護膜形成用膜之後進而用於其他用途之支持體,例如可列舉後述之切割片等支持片或基材。 The aforementioned support is not particularly limited as long as it can maintain the shape of the protective film forming film. For example, it may be a support used only for forming a protective film forming film, or it may be used to form a protective film forming film and then With the Bao It is a support for other purposes in the state where the film is laminated for forming a protective film. Examples of the support used only for forming the film for forming a protective film include a release film having a release treatment surface. In addition, as a support that is used for other purposes after forming the protective film forming film, for example, a support sheet or a base material such as a dicing sheet described later can be cited.

保護膜形成用膜的厚度並無特別限定,較佳為1μm至100μm,更佳為5μm至75μm,特佳為5μm至50μm。藉由使保護膜形成用膜的厚度為前述下限值以上,對作為被黏著體之半導體晶圓或半導體晶片之接著力變得更大。另外,藉由使保護膜形成用膜的厚度為前述上限值以下,於拾取半導體晶片時,利用剪力(shear force)可更容易地切斷作為硬化物之保護膜。 The thickness of the protective film formation film is not particularly limited, but is preferably 1 μm to 100 μm, more preferably 5 μm to 75 μm, and particularly preferably 5 μm to 50 μm. By making the thickness of the protective film forming film more than the aforementioned lower limit, the adhesive force to the semiconductor wafer or the semiconductor wafer as the adherend becomes greater. In addition, by setting the thickness of the protective film forming film to the aforementioned upper limit or less, when picking up the semiconductor wafer, the protective film as the cured product can be cut more easily by shear force.

本說明書中,所謂「厚度」表示在任意5個部位,利用接觸式厚度計測定厚度所獲得之平均值。 In this specification, the term "thickness" means the average value obtained by measuring the thickness with a contact thickness meter at any 5 locations.

<保護膜形成用組成物> <Composition for forming protective film>

前述保護膜形成用組成物含有能量線硬化性化合物(B),較佳為例如含有聚合物成分(A)及能量線硬化性化合物(B),更佳為例如含有聚合物成分(A)、能量線硬化性化合物(B)及光聚合起始劑(C)。 The composition for forming a protective film contains an energy ray curable compound (B), preferably contains a polymer component (A) and an energy ray curable compound (B), and more preferably contains a polymer component (A), Energy ray curable compound (B) and photopolymerization initiator (C).

繼而,對前述保護膜形成用組成物及保護膜形成用膜的含有成分進行說明。 Next, the components contained in the composition for forming a protective film and the film for forming a protective film will be described.

[聚合物成分(A)] [Polymer component (A)]

聚合物成分(A)係可視作是聚合性化合物進行聚合反應而形成之成分,且聚合物成分(A)係用以對保護膜形成用膜賦予成膜性或可撓性等之聚合物化合物。再者,本發明中,聚合反應亦包含聚縮合反應。 The polymer component (A) can be regarded as a component formed by the polymerization reaction of a polymerizable compound, and the polymer component (A) is a polymer compound for imparting film-forming properties or flexibility to the protective film forming film . Furthermore, in the present invention, the polymerization reaction also includes a polycondensation reaction.

再者,在保護膜形成用組成物所含有之成分中存在屬於聚合物成分(A)及能量線硬化性化合物(B)兩者之成分時,將此種成分作為能量線硬化性化合物(B)處理。作為此種成分,例如可列舉具有羥基,且經由胺甲酸乙酯鍵而於側鏈具有聚合性基之丙烯酸系聚合物。 Furthermore, when there are components belonging to both the polymer component (A) and the energy ray curable compound (B) among the components contained in the protective film forming composition, such components are referred to as the energy ray curable compound (B) )deal with. As such a component, the acrylic polymer which has a hydroxyl group and has a polymerizable group in a side chain via a urethane bond is mentioned, for example.

聚合物成分(A)可單獨使用1種,亦可併用2種以上。 A polymer component (A) may be used individually by 1 type, and may use 2 or more types together.

作為聚合物成分(A),例如可列舉:丙烯酸系樹脂、聚酯、聚胺甲酸乙酯、丙烯酸胺甲酸乙酯樹脂、聚矽氧樹脂、橡膠系聚合物、苯氧基樹脂等,較佳為丙烯酸系樹脂。 As the polymer component (A), for example, acrylic resin, polyester, polyurethane, urethane acrylate resin, silicone resin, rubber polymer, phenoxy resin, etc. can be cited. It is an acrylic resin.

作為前述丙烯酸系樹脂,可使用公知的丙烯酸系聚合物。 As the aforementioned acrylic resin, a known acrylic polymer can be used.

丙烯酸系樹脂的重量平均分子量(Mw)較佳為10000至2000000,更佳為100000至1500000。藉由使丙烯酸系樹脂的重量平均分子量為前述下限值以上,後述之支持片與保護膜之接著力受到抑制,附有保護膜之半導體晶片的拾取性進一步提高。另外,藉由使丙烯酸系樹脂的重量平均 分子量為前述上限值以下,保護膜形成用膜容易追隨被黏著體(半導體晶圓、半導體晶片)的凹凸面,進一步抑制被黏著體與保護膜形成用膜之間產生間隙等。 The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, more preferably 100,000 to 1,500,000. By making the weight average molecular weight of the acrylic resin more than the aforementioned lower limit, the adhesion between the support sheet and the protective film described later is suppressed, and the pick-up of the semiconductor wafer with the protective film is further improved. In addition, by averaging the weight of acrylic resin The molecular weight is below the above upper limit, the protective film forming film easily follows the uneven surface of the adherend (semiconductor wafer, semiconductor wafer), and the generation of gaps between the adherend and the protective film forming film is further suppressed.

再者,本說明書中,所謂「重量平均分子量」,只要無特別說明,則表示藉由凝膠滲透層析(Gel Permeation Chromatography;GPC)法測定之聚苯乙烯換算值。 In addition, in this specification, the "weight average molecular weight", unless otherwise specified, means a polystyrene conversion value measured by a gel permeation chromatography (Gel Permeation Chromatography; GPC) method.

丙烯酸系樹脂的玻璃轉移溫度(Tg)較佳為-60℃至70℃,更佳為-30℃至50℃。藉由使丙烯酸系樹脂的Tg為前述下限值以上,支持片與保護膜之接著力受到抑制,附有保護膜之半導體晶片的拾取性進一步提高。另外,藉由使丙烯酸系樹脂的Tg為前述上限值以下,被黏著體與保護膜形成用膜之接著力變得更大。 The glass transition temperature (Tg) of the acrylic resin is preferably -60°C to 70°C, more preferably -30°C to 50°C. By making the Tg of the acrylic resin more than the aforementioned lower limit, the adhesive force between the support sheet and the protective film is suppressed, and the pick-up of the semiconductor wafer with the protective film is further improved. In addition, by setting the Tg of the acrylic resin to be equal to or lower than the aforementioned upper limit, the adhesive force between the adherend and the protective film forming film becomes greater.

作為構成丙烯酸系樹脂之單體,例如可列舉以下等單體:構成烷基酯之烷基為鏈狀且碳數為1至18之(甲基)丙烯酸烷基酯,如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯(亦稱為(甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯(亦稱為(甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯 (亦稱為(甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯(亦稱為(甲基)丙烯酸硬脂酯)等;具有環狀骨架之(甲基)丙烯酸酯,如(甲基)丙烯酸環烷基酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異莰基酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸二環戊烯酯、(甲基)丙烯酸二環戊烯氧基乙酯、(甲基)丙烯酸醯亞胺等;含有羥基之(甲基)丙烯酸酯,如(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯等;以及含有縮水甘油基之(甲基)丙烯酸酯,如(甲基)丙烯酸縮水甘油酯等。 Examples of monomers constituting acrylic resins include the following monomers: (meth)acrylic acid alkyl esters of which the alkyl group constituting the alkyl ester has a chain shape and the carbon number is 1 to 18, such as (meth)acrylic acid Methyl ester, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, (meth)acrylate Base) n-octyl acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate, undecyl (meth)acrylate, ten (meth)acrylate Dialkyl esters (also known as lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (also known as myristyl (meth)acrylate) ), pentadecyl (meth)acrylate, cetyl (meth)acrylate (Also known as palm ester (meth)acrylate), heptadecyl (meth)acrylate, stearyl (meth)acrylate (also known as stearyl (meth)acrylate), etc.; (Meth) acrylate of cyclic skeleton, such as cycloalkyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, Dicyclopentenyl (meth)acrylate, dicyclopentenyloxyethyl (meth)acrylate, imine (meth)acrylate, etc.; (meth)acrylates containing hydroxyl groups, such as (meth) Hydroxymethyl acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, etc.; and (meth)acrylates containing glycidyl groups, such as glycidyl (meth)acrylate Wait.

上述之中,作為構成丙烯酸系樹脂之單體,較佳為(甲基)丙烯酸甲酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸縮水甘油酯等。 Among the above, as the monomer constituting the acrylic resin, methyl (meth)acrylate, butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, and glycidyl (meth)acrylate are preferred. Ester etc.

再者,本說明書中,所謂「(甲基)丙烯酸」係包含「丙烯酸」及「甲基丙烯酸」兩者之概念。與(甲基)丙烯酸類似之用語亦同樣,例如,所謂「(甲基)丙烯酸酯」係包含「丙烯酸酯」及「甲基丙烯酸酯」兩者之概念,所謂「(甲基)丙烯醯基」係包含「丙烯醯基」及「甲基丙烯醯基」兩者之概念。 In addition, in this specification, the term "(meth)acrylic acid" includes the concepts of both "acrylic acid" and "methacrylic acid". Terms similar to (meth)acrylic acid are also the same. For example, the so-called "(meth)acrylate" includes the concepts of both "acrylate" and "methacrylate". The so-called "(meth)acrylic acid ester" "Is a concept that includes both "acrylic acid base" and "methacrylic acid base".

作為構成丙烯酸系樹脂之單體,亦可列舉除(甲基)丙烯酸酯以外的單體,例如(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、苯乙烯、N-羥甲基丙烯醯胺等。 As the monomer constituting the acrylic resin, monomers other than (meth)acrylate can also be cited, such as (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methylol Acrylic amide and so on.

構成丙烯酸系樹脂之單體可僅為1種,亦可為2種以上。 The monomer constituting the acrylic resin may be only one type or two or more types.

丙烯酸系樹脂亦可具有乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等可與其他化合物鍵結之官能基。前述官能基可經由後述之交聯劑(G)與其他化合物鍵結,亦可不經由交聯劑(G)而與其他化合物直接鍵結。藉由使丙烯酸系樹脂利用前述官能基與其他化合物鍵結,有使用保護膜形成用膜而獲得之半導體裝置的封裝可靠性提高之傾向。 Acrylic resins may also have functional groups such as vinyl groups, (meth)acrylic groups, amino groups, hydroxyl groups, carboxyl groups, and isocyanate groups that can be bonded to other compounds. The aforementioned functional group may be bonded to other compounds via the crosslinking agent (G) described later, or may be directly bonded to other compounds without the crosslinking agent (G). By bonding the acrylic resin to another compound using the aforementioned functional group, there is a tendency that the packaging reliability of a semiconductor device obtained by using the protective film formation film is improved.

於保護膜形成用組成物含有丙烯酸系樹脂作為聚合物成分(A)之情形時,保護膜形成用組成物中的丙烯酸系樹脂的含量相對於保護膜形成用組成物中的除溶劑以外的全部成分的總質量,較佳為5質量%至50質量%,更佳為10質量%至45質量%。藉由使丙烯酸系樹脂的前述含量為上述範圍,支持片與保護膜之接著力受到抑制,附有保護膜之半導體晶片的拾取性進一步提高。 When the composition for forming a protective film contains acrylic resin as the polymer component (A), the content of the acrylic resin in the composition for forming a protective film is relative to all of the composition for forming a protective film except the solvent The total mass of the ingredients is preferably 5 to 50% by mass, and more preferably 10 to 45% by mass. By setting the aforementioned content of the acrylic resin within the above-mentioned range, the adhesive force between the support sheet and the protective film is suppressed, and the pick-up of the semiconductor wafer with the protective film is further improved.

於保護膜形成用膜含有丙烯酸系樹脂作為聚合物成分(A)之情形時,保護膜形成用膜中的丙烯酸系樹脂的含量相對於保護膜形成用膜的總質量,較佳為5質量%至50質量%,更佳為10質量%至45質量%。 When the protective film forming film contains acrylic resin as the polymer component (A), the content of the acrylic resin in the protective film forming film relative to the total mass of the protective film forming film is preferably 5% by mass To 50% by mass, more preferably 10% to 45% by mass.

本發明中,藉由降低支持片與保護膜之接著力(剝離力),而進一步提高附有保護膜之半導體晶片的拾取性,或者藉由使保護膜形成用膜容易追隨被黏著體的凹凸面,而進一步抑制被黏著體與保護膜形成用膜之間產生間隙等,就上述方面而言,作為聚合物成分(A),可單獨使用除丙烯酸系樹脂以外的熱塑性樹脂(以下,有時簡稱為「熱塑性樹脂」),亦可與丙烯酸系樹脂併用前述熱塑性樹脂。 In the present invention, by reducing the adhesion (peeling force) between the support sheet and the protective film, the pick-up of the semiconductor chip with the protective film is further improved, or the protective film forming film can easily follow the unevenness of the adherend In order to further suppress the generation of gaps between the adherend and the protective film forming film, in terms of the above aspects, as the polymer component (A), thermoplastic resins other than acrylic resins (hereinafter, sometimes (Referred to as "thermoplastic resin"), and the aforementioned thermoplastic resin may be used in combination with acrylic resin.

前述熱塑性樹脂的重量平均分子量較佳為1000至100000,更佳為3000至80000。 The weight average molecular weight of the aforementioned thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

前述熱塑性樹脂的玻璃轉移溫度(Tg)較佳為-30℃至150℃,更佳為-20℃至120℃。 The glass transition temperature (Tg) of the aforementioned thermoplastic resin is preferably -30°C to 150°C, more preferably -20°C to 120°C.

作為前述熱塑性樹脂,例如可列舉:聚酯、聚胺甲酸乙酯、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等。 As said thermoplastic resin, polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, polystyrene, etc. are mentioned, for example.

前述熱塑性樹脂可單獨使用1種,亦可併用2種以上。 The said thermoplastic resin may be used individually by 1 type, and may use 2 or more types together.

[能量線硬化性化合物(B)] [Energy ray curable compound (B)]

能量線硬化性化合物(B)係可藉由照射能量線而進行硬化(聚合)反應之成分。另外,能量線硬化性化合物(B)係用以使保護膜形成用膜硬化,而形成硬質的保護膜(亦 即,對保護膜形成用膜照射能量線而獲得之硬化物)之成分,可為單體及低聚物之任一者。 The energy-ray curable compound (B) is a component that can undergo a curing (polymerization) reaction by irradiating energy rays. In addition, the energy ray curable compound (B) is used to harden the protective film forming film to form a hard protective film (also That is, the component of the cured product obtained by irradiating the film for forming a protective film with energy rays) may be any of monomers and oligomers.

能量線硬化性化合物(B)可單獨使用1種,亦可併用2種以上。 The energy ray curable compound (B) may be used alone or in combination of two or more kinds.

保護膜形成用組成物中的能量線硬化性化合物(B)的含量相對於保護膜形成用組成物中的除溶劑以外的全部成分的總質量,較佳為3質量%至30質量%,更佳為5質量%至25質量%。 The content of the energy ray curable compound (B) in the protective film forming composition is preferably 3% by mass to 30% by mass relative to the total mass of all components except the solvent in the protective film forming composition, and more Preferably, it is 5 mass% to 25 mass %.

保護膜形成用膜中的能量線硬化性化合物(B)的含量相對於保護膜形成用膜的總質量,較佳為3質量%至30質量%,更佳為5質量%至25質量%。 The content of the energy ray curable compound (B) in the film for protective film formation is preferably 3% by mass to 30% by mass, and more preferably 5% by mass to 25% by mass relative to the total mass of the film for protective film formation.

作為能量線硬化性化合物(B),例如可列舉一分子中具有1個或2個以上能量線聚合性基之化合物。 Examples of the energy ray curable compound (B) include compounds having one or more energy ray polymerizable groups in one molecule.

前述能量線聚合性基只要為藉由照射能量線進行聚合反應之基則並無特別限定,於一分子的能量線硬化性化合物(B)具有2個以上能量線聚合性基之情形時,該等能量線聚合性基可互為相同亦可互為不同。亦即,一分子的能量線硬化性化合物(B)所具有之2個以上能量線聚合性基可全部相同,亦可全部不同,亦可僅有一部分相同。 The aforementioned energy ray polymerizable group is not particularly limited as long as it is a group that undergoes polymerization reaction by irradiation of energy rays. When one molecule of energy ray curable compound (B) has two or more energy ray polymerizable groups, the The iso-energy ray polymerizable groups may be the same or different from each other. That is, the two or more energy ray polymerizable groups possessed by one molecule of the energy ray curable compound (B) may all be the same, all may be different, or only a part may be the same.

作為前述能量線聚合性基,例如可列舉乙烯基、(甲基)丙烯醯基等,較佳為(甲基)丙烯醯基。 As said energy ray polymerizable group, a vinyl group, a (meth)acryl group etc. are mentioned, for example, Preferably it is a (meth)acryl group.

能量線硬化性化合物(B)較佳為一分子中所具有之能 量線聚合性基的個數為2個以上之多官能化合物。另外,保護膜形成用組成物及保護膜形成用膜中,前述多官能化合物的含量相對於前述能量線硬化性化合物(B)的總質量,較佳為90質量%以上100質量%以下,更佳為95質量%以上100質量%以下,進而較佳為98質量%以上100質量%以下,亦可為100質量%,亦即,保護膜形成用組成物及保護膜形成用膜所含有之能量線硬化性化合物(B)亦可全部為前述多官能化合物。 The energy ray hardening compound (B) is preferably the energy contained in one molecule A polyfunctional compound in which the number of polymerizable groups is 2 or more. In addition, in the protective film forming composition and the protective film forming film, the content of the polyfunctional compound relative to the total mass of the energy ray curable compound (B) is preferably 90% by mass to 100% by mass, and more It is preferably 95% by mass or more and 100% by mass or less, more preferably 98% by mass or more and 100% by mass or less, or 100% by mass, that is, the energy contained in the protective film forming composition and the protective film forming film All the linear curable compounds (B) may be the aforementioned polyfunctional compounds.

能量線硬化性化合物(B)的分子量較佳為1000以下,更佳為100至1000,進而較佳為150至800,特佳為200至550。藉由使能量線硬化性化合物(B)的分子量為上述範圍,所形成之保護膜的保護作用及可靠性變得更高。 The molecular weight of the energy ray curable compound (B) is preferably 1000 or less, more preferably 100 to 1000, still more preferably 150 to 800, particularly preferably 200 to 550. By setting the molecular weight of the energy ray curable compound (B) within the above range, the protective effect and reliability of the formed protective film become higher.

能量線硬化性化合物(B)較佳為(甲基)丙烯酸酯化合物,更佳為一分子中具有2個以上能量線聚合性基之多官能(甲基)丙烯酸酯化合物,特佳為一分子中具有2個以上(甲基)丙烯醯基之多官能(甲基)丙烯酸酯化合物。再者,此處,所謂「(甲基)丙烯酸酯化合物」表示(甲基)丙烯酸酯或其衍生物。另外,本說明書中,所謂「衍生物」表示原本的化合物的至少1個氫原子經氫原子以外的基(取代基)取代而成之化合物。 The energy ray curable compound (B) is preferably a (meth)acrylate compound, more preferably a multifunctional (meth)acrylate compound having two or more energy ray polymerizable groups in one molecule, and particularly preferably one molecule A polyfunctional (meth)acrylate compound having two or more (meth)acryloyl groups in it. In addition, here, "(meth)acrylate compound" means (meth)acrylate or its derivative. In addition, in this specification, the term "derivative" means a compound in which at least one hydrogen atom of the original compound is substituted with a group (substituent) other than a hydrogen atom.

作為上述具有2個以上(甲基)丙烯醯基之多官能(甲基 )丙烯酸酯化合物,例如可列舉:1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、新戊二醇己二酸二(甲基)丙烯酸酯、羥基新戊酸新戊二醇二(甲基)丙烯酸酯、二環戊基二(甲基)丙烯酸酯(亦稱為三環癸烷二甲醇二丙烯酸酯)、己內酯改質二環戊烯基二(甲基)丙烯酸酯、環氧乙烷改質磷酸二(甲基)丙烯酸酯、二(丙烯醯氧基乙基)異三聚氰酸酯、烯丙基化環己基二(甲基)丙烯酸酯等2官能(甲基)丙烯酸酯化合物;三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇三(甲基)丙烯酸酯、丙酸改質二季戊四醇三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、環氧丙烷改質三羥甲基丙烷三(甲基)丙烯酸酯、三(丙烯醯氧基乙基)異三聚氰酸酯、雙(丙烯醯氧基乙基)羥基乙基異三聚氰酸酯、異三聚氰酸環氧乙烷改質二丙烯酸酯、異三聚氰酸環氧乙烷改質三丙烯酸酯、ε-己內酯改質三(丙烯醯氧基乙基)異三聚氰酸酯等3官能(甲基)丙烯酸酯化合物;二甘油四(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯等4官能(甲基)丙烯酸酯化合物;二季戊四醇五(甲基)丙烯酸酯、丙酸改質二季戊四醇五(甲基)丙烯酸酯等5官能(甲基)丙烯酸酯化合物;及二季戊四醇六(甲基)丙烯酸酯、己內酯改質二季戊四醇六(甲基)丙烯酸酯等6官能(甲基)丙烯酸酯化合物等。 As the above-mentioned polyfunctional (methyl) group having two or more (meth)acrylic groups ) Acrylate compounds, for example, 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, neopentyl glycol di(meth)acrylate , Polyethylene glycol di(meth)acrylate, neopentyl glycol adipate di(meth)acrylate, hydroxypivalate neopentyl glycol di(meth)acrylate, dicyclopentyl di( Meth) acrylate (also known as tricyclodecane dimethanol diacrylate), caprolactone modified dicyclopentenyl di(meth)acrylate, ethylene oxide modified di(meth) phosphate Bifunctional (meth)acrylate compounds such as acrylate, bis(acryloxyethyl) isocyanurate, and allylated cyclohexyl di(meth)acrylate; trimethylolpropane tri( Meth) acrylate, dipentaerythritol tri(meth)acrylate, propionic acid modified dipentaerythritol tri(meth)acrylate, pentaerythritol tri(meth)acrylate, propylene oxide modified trimethylolpropane three (Meth)acrylate, tris(acryloxyethyl) isocyanurate, bis(acryloxyethyl)hydroxyethyl isocyanurate, isocyanuric ethylene oxide Alkyl modified diacrylate, isocyanuric acid ethylene oxide modified triacrylate, ε-caprolactone modified tris(propylene oxyethyl) isocyanurate and other trifunctional (methyl ) Acrylate compounds; 4-functional (meth)acrylate compounds such as diglycerol tetra(meth)acrylate and pentaerythritol tetra(meth)acrylate; dipentaerythritol penta(meth)acrylate and propionic acid to modify dipentaerythritol 5-functional (meth)acrylate compounds such as penta(meth)acrylate; and 6-functional (meth) compounds such as dipentaerythritol hexa(meth)acrylate and caprolactone modified dipentaerythritol hexa(meth)acrylate Acrylate compounds, etc.

上述之中,較佳為三環癸烷二羥甲基二丙烯酸酯、ε-己內酯改質三(丙烯醯氧基乙基)異三聚氰酸酯等。 Among the above, tricyclodecane dimethylol diacrylate, ε-caprolactone modified tris(acryloxyethyl) isocyanurate, and the like are preferred.

能量線硬化性化合物(B)較佳為一分子中所具有之能量線聚合性基的個數為2個至4個,更佳為2個至3個。藉由使用此種能量線硬化性化合物(B),所形成之保護膜的保護作用及可靠性變得更高。本說明書中,有時能量線硬化性化合物(B)之中包括一分子中具有2個至4個能量線聚合性基之化合物、及一分子中具有至少5個能量線聚合性基之化合物,將上述一分子中具有2個至4個能量線聚合性基之化合物稱為「能量線硬化性化合物(B1)」,將上述一分子中具有至少5個能量線聚合性基之化合物稱為「能量線硬化性化合物(B2)」。 The energy ray curable compound (B) preferably has 2 to 4 energy ray polymerizable groups in one molecule, and more preferably 2 to 3 energy ray polymerizable groups. By using such an energy ray curable compound (B), the protective effect and reliability of the formed protective film become higher. In this specification, the energy ray curable compound (B) may include a compound having 2 to 4 energy ray polymerizable groups in one molecule and a compound having at least 5 energy ray polymerizable groups in one molecule. The compound having 2 to 4 energy ray polymerizable groups in the above molecule is called "energy ray curable compound (B1)", and the compound having at least 5 energy ray polymerizable groups in the above molecule is called " Energy ray curable compound (B2)".

作為能量線硬化性化合物(B1),較佳為一分子中所具有之能量線聚合性基的個數為2個至3個之化合物,例如可列舉:三環癸烷二羥甲基二丙烯酸酯、ε-己內酯改質三(丙烯醯氧基乙基)異三聚氰酸酯等。 The energy ray curable compound (B1) is preferably a compound having 2 to 3 energy ray polymerizable groups in one molecule, for example, tricyclodecane dimethylol diacrylic acid Ester, ε-caprolactone modified tris(acryloyloxyethyl) isocyanurate, etc.

保護膜形成用組成物及保護膜形成用膜中,一分子中具有2個至4個能量線聚合性基之能量線硬化性化合物(B)(亦即,能量線硬化性化合物(B1))的含量相對於能量線硬化性化合物(B)的總質量,較佳為90質量%以上100質量%以下,更佳為95質量%以上100質量%以下,特佳為98質量%以上100質量%以下,亦可為100質量%,亦即,前述保護膜形成用組成物及保護膜形成用膜所含有之能量線硬化性化合物(B)亦可全部為能量線硬化性化合物(B1) In the composition for forming a protective film and the film for forming a protective film, an energy ray curable compound (B) having 2 to 4 energy ray polymerizable groups in one molecule (ie, an energy ray curable compound (B1)) Relative to the total mass of the energy ray curable compound (B), the content is preferably from 90% by mass to 100% by mass, more preferably from 95% by mass to 100% by mass, and particularly preferably from 98% by mass to 100% by mass Hereinafter, it may be 100% by mass, that is, the energy ray curable compound (B) contained in the protective film forming composition and the protective film forming film may all be energy ray curable compounds (B1)

另外,保護膜形成用組成物及保護膜形成用膜中,一分子中具有2個至3個能量線聚合性基之能量線硬化性化合物的含量相對於能量線硬化性化合物(B)的總質量,較佳為80質量%以上100質量%以下,更佳為85質量%以上100質量%以下,進而較佳為90質量%以上100質量%以下,特佳為95質量%以上100質量%以下,亦可為100質量%,亦即,前述保護膜形成用組成物及保護膜形成用膜所含有之能量線硬化性化合物(B)亦可全部為一分子中具有2個至3個能量線聚合性基之能量線硬化性化合物。 In addition, in the protective film forming composition and the protective film forming film, the content of energy ray curable compounds having 2 to 3 energy ray polymerizable groups in one molecule is relative to the total energy ray curable compound (B) The mass is preferably 80% by mass or more and 100% by mass or less, more preferably 85% by mass or more and 100% by mass or less, more preferably 90% by mass or more and 100% by mass or less, particularly preferably 95% by mass or more and 100% by mass or less , It may be 100% by mass, that is, the energy ray curable compound (B) contained in the protective film forming composition and the protective film forming film may all have 2 to 3 energy rays per molecule Energy ray curable compound of polymerizable base.

保護膜形成用組成物及保護膜形成用膜中的能量線硬化性化合物(B)的含量在將聚合物成分(A)的含量設為100質量份時,較佳為1質量份至150質量份,更佳為5質量份至130質量份,特佳為10質量份至110質量份。藉由使能量線硬化性化合物(B)的前述含量為前述下限值以上,所形成之保護膜即便暴露於大的溫度變化之下亦維持高保護作用,可靠性變得更高。另外,藉由使能量線硬化性化合物(B)的前述含量為前述上限值以下,支持片與保護膜之接著力受到抑制,附有保護膜之半導體晶片的拾取性進一步提高。 The content of the energy ray curable compound (B) in the protective film forming composition and the protective film forming film is preferably 1 to 150 parts by mass when the content of the polymer component (A) is 100 parts by mass Parts, more preferably 5 parts by mass to 130 parts by mass, particularly preferably 10 parts by mass to 110 parts by mass. By making the aforementioned content of the energy ray curable compound (B) more than the aforementioned lower limit value, the formed protective film maintains a high protective effect even when exposed to a large temperature change, and the reliability becomes higher. In addition, by making the aforementioned content of the energy ray curable compound (B) below the aforementioned upper limit value, the adhesion between the support sheet and the protective film is suppressed, and the pick-up of the semiconductor wafer with the protective film is further improved.

[光聚合起始劑(C)] [Photopolymerization initiator (C)]

光聚合起始劑(C)係藉由照射能量線而產生自由基,用以使能量線硬化性化合物(B)開始藉由自由基聚合進行硬化反應之成分。 The photopolymerization initiator (C) is a component that generates radicals by irradiating energy rays, and causes the energy ray curable compound (B) to start a hardening reaction by radical polymerization.

光聚合起始劑(C)可為公知的光聚合起始劑,具體而言,例如可列舉:4-(2-羥基乙氧基)苯基-2-(羥基-2-丙基)酮、α-羥基-α,α'-二甲基苯乙酮、2-甲基-2-羥基丙醯苯、1-羥基環己基苯基酮、2-羥基-1-{4-[4-(2-羥基-2-甲基-丙醯基)-苄基]苯基}-2-甲基-丙烷-1-酮等α-酮醇系化合物;苯乙酮、二甲胺基苯乙酮、甲氧基苯乙酮、2,2-二甲氧基-2-苯基苯乙酮、2,2-二乙氧基苯乙酮、2,2-二乙氧基-2-苯基苯乙酮、2-羥基-2-甲基-1-苯基丙烷-1-酮、1-羥基環己基苯基酮、2-甲基-1-[4-(甲硫基)苯基]-2-嗎福啉基丙烷-1-酮、2-苄基-2-二甲胺基-1-(4-嗎福啉基苯基)-丁酮-1等苯乙酮系化合物;安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香正丁醚、安息香異丁醚、大茴香偶姻甲醚等安息香醚系化合物;苄基二甲基縮酮、苯乙酮二甲基縮酮等縮酮系化合物;2-萘磺醯氯等芳香族磺醯氯系化合物;1-苯酮-1,1-丙二酮-2-(O-乙氧基羰基)肟、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮1-(O-乙醯基肟)等光活性肟系化合物;二苯基酮、對苯基二苯基酮、苯甲醯苯甲酸、二氯二苯基酮、4,4'-二乙基胺基二苯基酮、3,3'-二甲基-4-甲氧基二苯基酮等二苯基酮系化合物;2-甲基蒽醌、2-乙基蒽醌、2-第三丁基蒽醌、2-胺基蒽醌等蒽醌系化合物;噻噸酮(thioxanthone)、2-氯噻噸酮、2-甲基噻噸 酮、2-乙基噻噸酮、異丙基噻噸酮、2,4-二甲基噻噸酮、2,4-二乙基噻噸酮、2,4-二氯噻噸酮、2,4-二乙基噻噸酮、2,4-二異丙基噻噸酮等噻噸酮系化合物;對二甲胺基苯甲酸酯;樟腦醌(camphor quinone);酮鹵化物(ketone halide);二苯基(2,4,6-三甲基苯甲醯基)氧化膦(phosphine oxide)等醯基氧化膦;醯基膦酸鹽/酯、低聚[2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮]等。 The photopolymerization initiator (C) may be a known photopolymerization initiator, specifically, for example, 4-(2-hydroxyethoxy)phenyl-2-(hydroxy-2-propyl)ketone , Α-hydroxy-α,α'-dimethylacetophenone, 2-methyl-2-hydroxypropane benzene, 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-1-{4-[4- (2-Hydroxy-2-methyl-propanyl)-benzyl)phenyl}-2-methyl-propan-1-one and other α-keto alcohol compounds; acetophenone, dimethylamino phenylethyl Ketone, methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2,2-diethoxy-2-benzene Acetophenone, 2-hydroxy-2-methyl-1-phenylpropane-1-one, 1-hydroxycyclohexylphenyl ketone, 2-methyl-1-[4-(methylthio)phenyl ]-2-morpholinylpropane-1-one, 2-benzyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1 and other acetophenone compounds; Benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin n-butyl ether, benzoin isobutyl ether, anisin methyl ether and other benzoin ether compounds; benzyl dimethyl ketal, acetophenone dimethyl Ketal compounds such as ketals; aromatic sulfonyl chloride compounds such as 2-naphthalenesulfonyl chloride; 1-phenone-1,1-propanedione-2-(O-ethoxycarbonyl)oxime, 1- [9-Ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(O-acetoxime) and other photoactive oxime compounds; diphenyl Ketone, p-phenyl diphenyl ketone, benzoic acid, dichloro diphenyl ketone, 4,4'-diethylamino diphenyl ketone, 3,3'-dimethyl-4- Diphenyl ketone compounds such as methoxybenzophenone; anthraquinone compounds such as 2-methylanthraquinone, 2-ethylanthraquinone, 2-tert-butylanthraquinone, 2-aminoanthraquinone; Thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthone Ketone, 2-ethylthioxanthone, isopropylthioxanthone, 2,4-dimethylthioxanthone, 2,4-diethylthioxanthone, 2,4-dichlorothioxanthone, 2 ,4-diethylthioxanthone, 2,4-diisopropylthioxanthone and other thioxanthone compounds; p-dimethylamino benzoate; camphor quinone; ketone halide (ketone) halide); diphenyl (2,4,6-trimethylbenzyl) phosphine oxide (phosphine oxide) and other phosphine oxides; phosphonate/ester, oligo[2-hydroxy-2- Methyl-1-[4-(1-methylvinyl)phenyl]acetone] and the like.

上述之中,較佳為1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮1-(O-乙醯基肟)等。 Among the above, 1-[9-ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(O-acetyloxime) is preferred Wait.

保護膜形成用組成物中的光聚合起始劑(C)的含量在將聚合物成分(A)的含量設為100質量份時,較佳為0.01質量份至10質量份,更佳為0.1質量份至7質量份,特佳為0.2質量份至5質量份。藉由使光聚合起始劑(C)的前述含量為前述下限值以上,能量線硬化性化合物(B)之硬化反應更有效地進行。另外,藉由使光聚合起始劑(C)的前述含量為前述上限值以下,所形成之保護膜的保護作用及可靠性變得更高。 The content of the photopolymerization initiator (C) in the composition for forming a protective film, when the content of the polymer component (A) is 100 parts by mass, is preferably 0.01 to 10 parts by mass, more preferably 0.1 Parts by mass to 7 parts by mass, particularly preferably 0.2 parts by mass to 5 parts by mass. By making the aforementioned content of the photopolymerization initiator (C) more than the aforementioned lower limit value, the curing reaction of the energy ray curable compound (B) proceeds more efficiently. In addition, by making the aforementioned content of the photopolymerization initiator (C) below the aforementioned upper limit, the protective effect and reliability of the formed protective film become higher.

另外,保護膜形成用組成物中的光聚合起始劑(C)的含量相對於保護膜形成用組成物或保護膜形成用膜的總質量,較佳為0.1質量%至3質量%。 In addition, the content of the photopolymerization initiator (C) in the protective film formation composition is preferably 0.1% by mass to 3% by mass relative to the total mass of the protective film formation composition or the protective film formation film.

[填充材料(D)] [Filling material (D)]

保護膜形成用組成物及保護膜形成用膜亦可含有填 充材料(D)。保護膜形成用膜藉由含有填充材料(D),變得容易調整熱膨脹係數。因此,藉由使此種保護膜形成用膜之硬化後之保護膜的熱膨脹係數對於半導體晶片而言最適宜,可提高封裝可靠性。 The protective film forming composition and the protective film forming film may also contain filler Filling material (D). By containing the filler (D) in the protective film formation film, it becomes easy to adjust the thermal expansion coefficient. Therefore, by making the thermal expansion coefficient of the protective film after hardening of such a protective film formation film optimal for a semiconductor chip, it can improve package reliability.

另外,通常,藉由使用含有填充材料(D)之保護膜形成用組成物,亦可降低硬化後的保護膜的吸濕率,或者提高硬化後的保護膜的導熱性。 In addition, generally, by using the protective film forming composition containing the filler (D), the moisture absorption rate of the cured protective film can be reduced, or the thermal conductivity of the cured protective film can be improved.

填充材料(D)可為有機填充材料及無機填充材料之任一者,較佳為無機填充材料。 The filling material (D) may be any one of an organic filling material and an inorganic filling material, preferably an inorganic filling material.

作為較佳的無機填充材料,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等的粉末;將該等二氧化矽等球形化所成之珠粒;該等二氧化矽等的單晶纖維;玻璃纖維等。 As a preferable inorganic filler, for example, powders such as silica, alumina, talc, calcium carbonate, titanium dioxide, iron oxide, silicon carbide, boron nitride, etc. can be cited; Beads; single crystal fibers such as silicon dioxide; glass fibers, etc.

該等之中,無機填充材料較佳為二氧化矽填料或氧化鋁填料。 Among them, the inorganic filler material is preferably silica filler or alumina filler.

填充材料(D)可單獨使用1種,亦可併用2種以上。 The filler (D) may be used alone or in combination of two or more kinds.

於使用填充材料(D)之情形時,相對於保護膜形成用組成物中的除溶劑以外的成分的總質量之填充材料(D)的含量(亦即,相對於保護膜形成用膜的總質量之填充材料(D)的含量)較佳為5質量%至80質量%,更佳為7質量%至65質量%。藉由使填充材料(D)的含量為前述下限值以上 ,可更顯著地獲得使用填充材料(D)之效果。另外,藉由使填充材料(D)的含量為前述上限值以下,所形成之保護膜的保護作用及可靠性變得更高。 In the case of using the filler (D), the content of the filler (D) relative to the total mass of the components other than the solvent in the protective film forming composition (that is, relative to the total mass of the protective film forming film The content of the mass filler (D)) is preferably 5 mass% to 80 mass%, more preferably 7 mass% to 65% by mass. By making the content of the filler (D) above the aforementioned lower limit , The effect of using filler (D) can be obtained more significantly. In addition, by making the content of the filler (D) below the aforementioned upper limit, the protective effect and reliability of the formed protective film become higher.

[著色劑(E)] [Colorant (E)]

保護膜形成用組成物及保護膜形成用膜亦可含有著色劑(E)。 The composition for protective film formation and the film for protective film formation may contain a coloring agent (E).

作為著色劑(E),例如可列舉無機系顏料、有機系顏料、有機系染料等公知的著色劑。 As a coloring agent (E), well-known coloring agents, such as an inorganic type pigment, an organic type pigment, an organic type dye, etc. are mentioned, for example.

作為前述有機系顏料及有機系染料,例如可列舉:銨系(aminium)色素、花青系(cyanine)色素、部花青系(merocyanine)色素、克酮鎓(croconium)系色素、方酸鎓系(squalium)色素、薁鎓系(azulenium)色素、聚次甲基系(polymethine)色素、萘醌系(naphthoquinone)色素、吡喃鎓系(pyrylium)色素、酞青系(phthalocyanine)色素、萘酞青系(naphthalocyanine)色素、萘內醯胺系(naphtho lactam)色素、偶氮系色素、縮合偶氮系色素、靛藍系色素、紫環酮系(perinone)色素、苝系(perylene)色素、二噁烷系(dioxane)色素、喹吖啶酮系(quinacridone)色素、異吲哚啉酮系色素、喹酞酮系(quinophthalone)色素、吡咯系(pyrrole)色素、硫靛藍系(thioindigo)色素、金屬錯合物系色素(金屬錯鹽染料)、二硫醇金屬錯合物系色素、吲哚酚系(indole phenol)色素、三烯丙基甲烷系色素、蒽醌系 (anthraquinone)色素、萘酚系色素、甲亞胺系(azomethine)色素、苯并咪唑酮系色素、皮蒽酮系(pyranthrone)色素及士林(threne)系色素等。 Examples of the aforementioned organic pigments and organic dyes include: aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, and squaraine dyes. Squalium pigments, azulenium pigments, polymethine pigments, naphthoquinone pigments, pyrylium pigments, phthalocyanine pigments, naphthalene Phthalocyanine pigments, naphtho lactam pigments, azo pigments, condensed azo pigments, indigo pigments, perinone pigments, perylene pigments, Dioxane pigments, quinacridone pigments, isoindolinone pigments, quinophthalone pigments, pyrrole pigments, thioindigo pigments , Metal complex dyes (metal complex salt dyes), dithiol metal complex dyes, indole phenol dyes, triallylmethane dyes, anthraquinone dyes (anthraquinone) pigments, naphthol-based pigments, azomethine-based pigments, benzimidazolone-based pigments, pyranthrone-based pigments, and threne-based pigments.

作為前述無機系顏料,例如可列舉:碳黑、鈷系色素、鐵系色素、鉻系色素、鈦系色素、釩系色素、鋯系色素、鉬系色素、釕系色素、鉑系色素、ITO(indium tin oxide;銦錫氧化物)系色素、ATO(antimony tin oxide;銻錫氧化物)系色素等。 Examples of the aforementioned inorganic pigments include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO Indium tin oxide (indium tin oxide) type pigments, ATO (antimony tin oxide; antimony tin oxide) type pigments, etc.

上述之中,較佳為酞青系色素、異吲哚啉酮系色素、蒽醌系色素等。 Among the above, phthalocyanine dyes, isoindolinone dyes, anthraquinone dyes, etc. are preferred.

著色劑(E)可單獨使用1種,亦可併用2種以上。 The coloring agent (E) may be used individually by 1 type, and may use 2 or more types together.

於使用著色劑(E)之情形時,保護膜形成用膜中的著色劑(E)的含量根據目的適當調節即可。例如,存在藉由雷射照射對保護膜實施印刷之情形,藉由調節保護膜形成用膜中的著色劑(E)的含量,調節保護膜的透光性,可調節印刷視認性。該情形時,相對於保護膜形成用組成物中的除溶劑以外的成分的總質量,著色劑(E)的含量(亦即,相對於保護膜形成用膜的總質量之著色劑(E)的含量)較佳為0.1質量%至10質量%,更佳為0.4質量%至7.5質量%,特佳為0.8質量%至5質量%。藉由使著色劑(E)的前述含量為前述下限值以上,可更顯著地獲得使用著色劑(E)之 效果。另外,藉由使著色劑(E)的前述含量為前述上限值以下,可抑制著色劑(E)之過剩使用。 In the case of using the coloring agent (E), the content of the coloring agent (E) in the film for forming a protective film may be appropriately adjusted according to the purpose. For example, there is a case where the protective film is printed by laser irradiation. By adjusting the content of the coloring agent (E) in the protective film forming film, the light transmittance of the protective film can be adjusted, and the visibility of printing can be adjusted. In this case, the content of the colorant (E) relative to the total mass of the components other than the solvent in the protective film formation composition (that is, the colorant (E) relative to the total mass of the protective film formation film The content of) is preferably 0.1% by mass to 10% by mass, more preferably 0.4% by mass to 7.5% by mass, and particularly preferably 0.8% by mass to 5% by mass. By making the aforementioned content of the coloring agent (E) more than the aforementioned lower limit, it is possible to obtain more significantly effect. In addition, by making the aforementioned content of the colorant (E) below the aforementioned upper limit value, it is possible to suppress the excessive use of the colorant (E).

[偶合劑(F)] [Coupling agent (F)]

保護膜形成用組成物及保護膜形成用膜亦可含有偶合劑(F)。保護膜形成用膜藉由含有具有可與無機化合物或有機化合物反應之官能基之偶合劑作為偶合劑(F),可提高對被黏著體之接著性及密接性。另外,由含有偶合劑(F)之保護膜形成用膜形成之保護膜於無損耐熱性之情況下抗水性提高。 The composition for forming a protective film and the film for forming a protective film may contain a coupling agent (F). The protective film formation film contains a coupling agent (F) having a functional group that can react with an inorganic compound or an organic compound as the coupling agent (F), thereby improving the adhesion and adhesion to the adherend. In addition, the protective film formed of the protective film forming film containing the coupling agent (F) improves the water resistance without impairing the heat resistance.

偶合劑(F)較佳為具有可與聚合物成分(A)、能量線硬化性化合物(B)等所具有之官能基反應之官能基之化合物,更佳為矽烷偶合劑。 The coupling agent (F) is preferably a compound having a functional group that can react with the functional group possessed by the polymer component (A), the energy ray curable compound (B), etc., and more preferably a silane coupling agent.

作為較佳的前述矽烷偶合劑,例如可列舉:3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基甲基二乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基甲基二乙氧基矽烷、3-(苯基胺基)丙基三甲氧基矽烷、(3-脲基丙基)三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽烷基丙基)四硫烷(bis(3-ethoxysilylpropyl)tetrasulfane)、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、 乙烯基三乙醯氧基矽烷、咪唑矽烷等。 As a preferred silane coupling agent, for example, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxymethyldiethoxysilane, 2-(3,4-epoxy ring) Hexyl) ethyl trimethoxy silane, 3-methacryloxy propyl trimethoxy silane, 3-aminopropyl trimethoxy silane, 3-(2-aminoethyl amino) propyl trimethyl Oxysilane, 3-(2-aminoethylamino) propyl methyl diethoxy silane, 3-(phenylamino) propyl trimethoxy silane, (3-ureidopropyl) three Ethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl) tetrasulfane (bis(3-ethoxysilylpropyl) )tetrasulfane), methyl trimethoxysilane, methyl triethoxysilane, vinyl trimethoxysilane, Vinyl triacetoxysilane, imidazole silane, etc.

上述之中,較佳為3-甲基丙烯醯氧基丙基三甲氧基矽烷等。 Among the above, 3-methacryloxypropyltrimethoxysilane and the like are preferred.

偶合劑(F)可單獨使用1種,亦可併用2種以上。 A coupling agent (F) may be used individually by 1 type, and may use 2 or more types together.

於使用偶合劑(F)之情形時,保護膜形成用組成物及保護膜形成用膜中的偶合劑(F)的含量在將聚合物成分(A)及能量線硬化性化合物(B)的合計含量設為100質量份時,較佳為0.03質量份至20質量份,更佳為0.05質量份至10質量份,特佳為0.1質量份至5質量份。藉由使偶合劑(F)的前述含量為前述下限值以上,可更顯著地獲得使用偶合劑(F)之效果。另外,藉由使偶合劑(F)的前述含量為前述上限值以下,可進一步抑制逸氣的產生。 When the coupling agent (F) is used, the content of the coupling agent (F) in the protective film forming composition and the protective film forming film is based on the content of the polymer component (A) and the energy ray curable compound (B) When the total content is 100 parts by mass, it is preferably 0.03 parts by mass to 20 parts by mass, more preferably 0.05 parts by mass to 10 parts by mass, and particularly preferably 0.1 parts by mass to 5 parts by mass. By making the aforementioned content of the coupling agent (F) more than the aforementioned lower limit, the effect of using the coupling agent (F) can be obtained more significantly. In addition, by making the aforementioned content of the coupling agent (F) below the aforementioned upper limit value, the generation of outgassing can be further suppressed.

[交聯劑(G)] [Crosslinking agent (G)]

在使用具有可與其他化合物鍵結之官能基,例如乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基之上述丙烯酸系樹脂作為聚合物成分(A)時,為了使該官能基與其他化合物鍵結而產生交聯,可使用交聯劑(G)。藉由使用交聯劑(G)產生交聯,可調節保護膜形成用膜的初期接著力及凝聚力。 When using the above-mentioned acrylic resin with functional groups that can be bonded to other compounds, such as vinyl, (meth)acrylic, amino, hydroxyl, carboxyl, isocyanate and other functional groups as the polymer component (A) In order to bond the functional group with other compounds to cause crosslinking, a crosslinking agent (G) can be used. By using the crosslinking agent (G) to cause crosslinking, the initial adhesive force and cohesive force of the protective film formation film can be adjusted.

作為交聯劑(G),例如可列舉:有機多元異氰酸酯化 合物、有機多元亞胺化合物等。 As the crosslinking agent (G), for example, organic polyisocyanate Compounds, organic polyimine compounds, etc.

作為前述有機多元異氰酸酯化合物,例如可列舉:芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物、脂環族多元異氰酸酯化合物以及該等化合物的三聚物、異三聚氰酸酯體及加成物(與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷或蓖麻油等含低分子活性氫化合物之反應產物,例如三羥甲基丙烷的苯二甲基二異氰酸酯加成物等)、或使有機多元異氰酸酯化合物與多元醇化合物進行反應而獲得之末端異氰酸酯胺甲酸乙酯預聚物等。 Examples of the aforementioned organic polyvalent isocyanate compound include: aromatic polyvalent isocyanate compounds, aliphatic polyvalent isocyanate compounds, alicyclic polyvalent isocyanate compounds, and trimers, isocyanurate bodies, and adducts of these compounds ( Reaction products with low molecular active hydrogen compounds such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil, such as xylylene diisocyanate adducts of trimethylolpropane, etc.), Or a terminal isocyanate urethane prepolymer obtained by reacting an organic polyisocyanate compound and a polyol compound.

作為前述有機多元異氰酸酯化合物,更具體而言,例如可列舉:2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-苯二甲基二異氰酸酯;1,4-二甲苯二異氰酸酯;二苯基甲烷-4,4'-二異氰酸酯;二苯基甲烷-2,4'-二異氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4'-二異氰酸酯;二環己基甲烷-2,4'-二異氰酸酯;三羥甲基丙烷等多元醇的全部或一部分羥基加成甲苯二異氰酸酯及六亞甲基二異氰酸酯之任一者或兩者所成之化合物;離胺酸二異氰酸酯等。 As the aforementioned organic polyvalent isocyanate compound, more specifically, for example, 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate Isocyanate; Diphenylmethane-4,4'-Diisocyanate; Diphenylmethane-2,4'-Diisocyanate; 3-Methyldiphenylmethane Diisocyanate; Hexamethylene Diisocyanate; Isophorone Diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; addition of all or part of the hydroxyl groups of polyols such as trimethylolpropane toluene diisocyanate and hexamethylene A compound of either or both of methyl diisocyanate; lysine diisocyanate, etc.

作為前述有機多元亞胺化合物,例如可列舉:N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶甲醯胺)、三羥甲基丙烷-三 -β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N'-甲苯-2,4-雙(1-氮丙啶甲醯胺)三伸乙基三聚氰胺等。 As the aforementioned organic polyimine compound, for example, N,N'-diphenylmethane-4,4'-bis(1-aziridinemethamide), trimethylolpropane-trimethylolpropane -β-aziridinyl propionate, tetramethylolmethane-tris-β-aziridinyl propionate, N,N'-toluene-2,4-bis(1-aziridinyl methamide ) Triethylene melamine, etc.

作為交聯劑(G),上述之中,較佳為2,4-甲苯二異氰酸酯、2,6-甲苯二異氰酸酯。 As the crosslinking agent (G), among the above, 2,4-toluene diisocyanate and 2,6-toluene diisocyanate are preferred.

於使用異氰酸酯系交聯劑作為交聯劑(G)之情形時,作為聚合物成分(A)之前述丙烯酸系樹脂較佳為使用含羥基聚合物。於交聯劑(G)具有異氰酸酯基,且丙烯酸系樹脂具有羥基之情形時,藉由交聯劑(G)與丙烯酸系樹脂之反應,可簡便地向保護膜形成用膜中導入交聯結構。 When an isocyanate-based crosslinking agent is used as the crosslinking agent (G), it is preferable to use a hydroxyl-containing polymer as the aforementioned acrylic resin as the polymer component (A). When the crosslinking agent (G) has an isocyanate group and the acrylic resin has a hydroxyl group, the crosslinking structure can be easily introduced into the protective film formation film by the reaction between the crosslinking agent (G) and the acrylic resin .

於使用交聯劑(G)之情形時,保護膜形成用組成物中或保護膜形成用膜中的交聯劑(G)的含量在將聚合物成分(A)的含量設為100質量份時,較佳為0.01質量份至20質量份,更佳為0.1質量份至10質量份,特佳為0.5質量份至5質量份。 When the crosslinking agent (G) is used, the content of the crosslinking agent (G) in the protective film forming composition or the protective film forming film is set to 100 parts by mass of the polymer component (A) At this time, it is preferably 0.01 parts by mass to 20 parts by mass, more preferably 0.1 parts by mass to 10 parts by mass, and particularly preferably 0.5 parts by mass to 5 parts by mass.

[通用的添加劑(H)] [General additives (H)]

保護膜形成用組成物及保護膜形成用膜除了上述成分以外,亦可含有通用的添加劑(H)。 The composition for forming a protective film and the film for forming a protective film may contain a general-purpose additive (H) in addition to the above-mentioned components.

作為通用的添加劑(H),例如可列舉:公知的塑化劑、抗靜電劑、抗氧化劑、吸除劑、增感劑等。 As a general-purpose additive (H), a well-known plasticizer, an antistatic agent, an antioxidant, a scavenger, a sensitizer, etc. are mentioned, for example.

[溶劑] [Solvent]

保護膜形成用組成物藉由稀釋而其操作性提高,因此較佳為進一步含有溶劑。 The composition for forming a protective film has improved operability by dilution, so it is preferable to further contain a solvent.

雖然保護膜形成用組成物所含有之溶劑並無特別限定,但作為較佳者,例如可列舉:甲苯、二甲苯等烴;甲醇、乙醇、2-丙醇、異丁醇(2-甲基丙烷-1-醇)、1-丁醇等醇;乙酸乙酯等酯;丙酮、甲基乙基酮等酮;四氫呋喃等醚;二甲基甲醯胺、N-甲基吡咯啶酮等醯胺(具有醯胺鍵之化合物)等。 Although the solvent contained in the composition for forming a protective film is not particularly limited, preferred ones include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (2-methyl Propan-1-ol), 1-butanol and other alcohols; ethyl acetate and other esters; acetone, methyl ethyl ketone and other ketones; tetrahydrofuran and other ethers; dimethylformamide, N-methylpyrrolidone and other alcohols Amines (compounds with amide bonds) and the like.

保護膜形成用組成物所含有之溶劑可僅為1種,亦可為2種以上。 The solvent contained in the composition for forming a protective film may be only one type or two or more types.

保護膜形成用組成物含有溶劑時的溶劑的含量較佳為相對於前述組成物的總質量,前述組成物的固形物成分濃度成為35質量%至75質量%之量。 When the composition for forming a protective film contains a solvent, the content of the solvent is preferably such that the solid content concentration of the composition is 35 to 75% by mass relative to the total mass of the composition.

保護膜形成用組成物可藉由調配用以構成該組成物之上述各成分而獲得。 The composition for forming a protective film can be obtained by blending the above-mentioned components to constitute the composition.

調配各成分時之添加順序並無特別限定,亦可同時添加2種以上成分。 The order of addition when preparing each component is not particularly limited, and two or more components may be added at the same time.

於使用溶劑之情形時,可將溶劑與溶劑以外的任一種調配成分混合,預先稀釋該調配成分而使用,亦可將溶劑與該等調配成分混合而使用,而並不預先稀釋溶劑以外的任一種調配成分。 In the case of using a solvent, the solvent can be mixed with any compounding component other than the solvent, and the compounding component can be diluted before use, or the solvent can be mixed with the compounding component and used without pre-diluting anything other than the solvent. A blending ingredient.

調配時混合各成分之方法並無特別限定,自公知的方法中適當選擇即可,例如使攪拌器或攪拌葉片等旋轉而進行混合之方法;使用混合器而進行混合之方法;施加超音波而進行混合之方法。 The method of mixing the components during the preparation is not particularly limited, and can be appropriately selected from known methods, such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; and applying ultrasonic waves. Method of mixing.

如上所述般,本發明之保護膜形成用膜例如可藉由將保護膜形成用組成物塗敷於支持體的表面並加以乾燥而形成。 As described above, the film for forming a protective film of the present invention can be formed, for example, by applying the composition for forming a protective film on the surface of a support and drying it.

藉由公知的方法,將保護膜形成用組成物塗敷於支持體的表面即可,例如可列舉使用以下各種塗佈機之方法:氣刀塗佈機、刮刀塗佈機、棒式塗佈機、凹版塗佈機、輥塗機、輥刀塗佈機、簾幕式塗佈機、模塗機、刀式塗佈機、網印塗佈機、線棒塗佈機、模唇塗佈機等。 The composition for forming a protective film may be applied to the surface of the support by a known method, for example, methods using various coating machines as follows: air knife coater, knife coater, bar coater Machine, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, wire bar coater, die lip coating Machine waiting.

在對保護膜形成用組成物進行乾燥時,乾燥溫度較佳為80℃至130℃,乾燥時間較佳為10秒鐘至10分鐘。 When the composition for forming a protective film is dried, the drying temperature is preferably 80°C to 130°C, and the drying time is preferably 10 seconds to 10 minutes.

藉由照射能量線使本發明之保護膜形成用膜硬化而形成之保護膜的楊氏模數為500MPa以上,且斷裂伸長率為8%以上。 The Young's modulus of the protective film formed by curing the film for forming a protective film of the present invention by irradiating energy rays is 500 MPa or more, and the elongation at break is 8% or more.

藉由調節能量線硬化性化合物(B)等之保護膜形成用膜的含有成分,前述保護膜的楊氏模數較佳可設為 550MPa以上,例如亦可設為1000MPa以上、1400MPa以上、1800MPa以上等。 By adjusting the components of the protective film forming film such as the energy ray curable compound (B), the Young's modulus of the protective film can preferably be set to 550 MPa or more, for example, it may be 1000 MPa or more, 1400 MPa or more, 1800 MPa or more.

另一方面,雖然前述保護膜的楊氏模數的上限值並無特別限定,但就切割性、或封裝可靠性之方面而言,較佳為10000MPa,更佳為5000MPa。 On the other hand, although the upper limit of the Young's modulus of the aforementioned protective film is not particularly limited, it is preferably 10,000 MPa, and more preferably 5000 MPa in terms of cutting properties or packaging reliability.

亦即,前述保護膜的楊氏模數為500MPa以上10000MPa以下,較佳為550MPa以上5000MPa以下,更佳為1000MPa以上5000MPa以下,進而更佳為1400MPa以上5000MPa以下,特佳為1800MPa以上5000MPa以下。 That is, the Young's modulus of the protective film is 500 MPa or more and 10,000 MPa or less, preferably 550 MPa or more and 5,000 MPa or less, more preferably 1,000 MPa or more and 5,000 MPa or less, still more preferably 1,400 MPa or more and 5,000 MPa or less, particularly preferably 1800 MPa or more and 5,000 MPa or less.

再者,本發明中,所謂「楊氏模數」表示在進行將試片以拉伸速度200mm/min拉伸之試驗(拉伸試驗)時,由試驗初期中之應力應變曲線的斜率求出之數值。楊氏模數可在測定以下說明之「斷裂伸長率」時同時測定。 Furthermore, in the present invention, the so-called "Young's modulus" means that when a test piece is stretched at a tensile speed of 200 mm/min (tensile test), it is determined from the slope of the stress-strain curve at the initial stage of the test The value. Young's modulus can be measured at the same time when measuring the "breaking elongation" described below.

藉由調節能量線硬化性化合物(B)等之保護膜形成用膜的含有成分,前述保護膜的斷裂伸長率較佳可設為10%以上,例如亦可設為15%以上、20%以上、30%以上、40%、50%以上等。 By adjusting the content of the protective film forming film such as the energy ray curable compound (B), the elongation at break of the protective film can be preferably set to 10% or more, for example, 15% or more and 20% or more. , 30% or more, 40%, 50% or more, etc.

另一方面,雖然前述保護膜的斷裂伸長率的上限值並無特別限定,但就切割時容易獲得割斷性之方面而言,較佳為100%。 On the other hand, although the upper limit of the breaking elongation of the protective film is not particularly limited, it is preferably 100% in terms of easily obtaining the scission property during cutting.

亦即,前述保護膜的斷裂伸長率為8%以上100%以下,可設為10%以上100%以下、15%以上100%以下、20%以 上100%以下、30%以上100%以下、40%以上100%以下、50%以上100%以下,特佳為設為100%。 That is, the elongation at break of the aforementioned protective film is 8% or more and 100% or less, and can be set to 10% or more and 100% or less, 15% or more and 100% or less, and 20% or less. Upper 100% or lower, 30% or higher and 100% or lower, 40% or higher and 100% or lower, 50% or higher and 100% or lower, particularly preferably 100%.

再者,本發明中,將依據JIS K7161:1994及JIS K7127:1999之拉伸破裂應變設為「斷裂伸長率」,該拉伸破裂應變有試片不具有降伏點(yield point)時之拉伸破裂應變、或具有降伏點時之拉伸破裂所謂應變稱之。 Furthermore, in the present invention, the tensile rupture strain in accordance with JIS K7161:1994 and JIS K7127:1999 is referred to as "elongation at break". The tensile rupture strain may be that when the test piece does not have a yield point. Tensile rupture strain, or tensile rupture with a yield point, is called strain.

斷裂伸長率藉由以下方式求出:使用寬15mm、長140mm之試片作為試片,將夾具間距離設為100mm,以拉伸速度200mm/min拉伸該試片,測定此時試片的伸長量,使用該測定值而求出斷裂伸長率。 The elongation at break is determined by the following method: use a test piece with a width of 15 mm and a length of 140 mm as the test piece, set the distance between the clamps to 100 mm, and stretch the test piece at a stretching speed of 200 mm/min. The elongation, and the elongation at break is determined using the measured value.

本發明之保護膜形成用膜的另一方面係一種保護膜形成用膜,藉由照射能量線,形成楊氏模數為590MPa以上1960MPa以下,且斷裂伸長率為10.7%以上56.0%以下之保護膜。 Another aspect of the film for forming a protective film of the present invention is a film for forming a protective film. By irradiating energy rays, a protective film having a Young's modulus of 590 MPa to 1960 MPa and a breaking elongation of 10.7% to 56.0% is formed. membrane.

《保護膜形成用複合片》 "Composite sheet for protective film formation"

本發明之保護膜形成用複合片於支持片的一方的表面上具備上述本發明之保護膜形成用膜。 The composite sheet for forming a protective film of the present invention includes the film for forming a protective film of the present invention on one surface of the support sheet.

本發明之保護膜形成用複合片用以於半導體晶圓或半導體晶片的背面形成保護膜。 The composite sheet for forming a protective film of the present invention is used for forming a protective film on the back surface of a semiconductor wafer or a semiconductor wafer.

作為前述支持片,例如可列舉僅由基材所構成之支持片,及於基材上積層其他層所成之支持片。 As the aforementioned support sheet, for example, a support sheet composed only of a base material, and a support sheet formed by laminating other layers on the base material.

以下,對本發明之保護膜形成用複合片更詳細地進行說明。 Hereinafter, the composite sheet for forming a protective film of the present invention will be described in more detail.

圖1係以示意方式表示本發明之保護膜形成用複合片的一實施形態之剖面圖。再者,以下說明所使用之圖中,為了容易理解本發明的特徵,有出於方便考慮而將成為重要部分之部位放大表示之情形,各構成要素的尺寸比率等並不限於與實際相同。 Fig. 1 is a cross-sectional view schematically showing one embodiment of the composite sheet for forming a protective film of the present invention. In addition, in the drawings used in the following description, in order to facilitate understanding of the characteristics of the present invention, parts that become important parts may be enlarged for convenience, and the dimensional ratios of the components are not limited to the actual ones.

此處所示之保護膜形成用複合片1A係於基材11上具備黏著劑層12,且於黏著劑層12上具備保護膜形成用膜13而成。支持片10係基材11及黏著劑層12之積層體,換言之,保護膜形成用複合片1A具有在支持片10的一方的表面10a上積層有保護膜形成用膜13之結構。另外,保護膜形成用複合片1A進而於保護膜形成用膜13上具備剝離膜15。保護膜形成用膜13係上述本發明之保護膜形成用膜。 The composite sheet 1A for forming a protective film shown here includes an adhesive layer 12 on a base material 11 and a protective film forming film 13 on the adhesive layer 12. The support sheet 10 is a laminate of the base material 11 and the adhesive layer 12. In other words, the protective film formation composite sheet 1A has a structure in which the protective film formation film 13 is laminated on one surface 10 a of the support sheet 10. In addition, the composite sheet 1A for forming a protective film further includes a release film 15 on the film 13 for forming a protective film. The film 13 for forming a protective film is the film for forming a protective film of the present invention described above.

保護膜形成用複合片1A中,於基材11的一方的表面11a積層有黏著劑層12,於黏著劑層12的表面12a(亦即,黏著劑層12中之與和基材11相接之面為相反側之面)的整個面上積層有保護膜形成用膜13,於保護膜形成用膜13的表面13a(亦即,保護膜形成用膜13中之與和黏著劑層12相接之面為相反側之面)的一部分積層有治具用接著劑層16,於保護膜形成用膜13的表面13a中未積層有治具用接 著劑層16之面,及治具用接著劑層16的表面16a(亦即,上表面:治具用接著劑層16中之與和保護膜形成用膜13相接之面為相反側之面以及側面:治具用接著劑層16中之位於保護膜形成用複合片1A的中央側之側面)積層有剝離膜15。 In the composite sheet 1A for forming a protective film, an adhesive layer 12 is laminated on one surface 11a of the substrate 11, and an adhesive layer 12 is laminated on the surface 12a of the adhesive layer 12 (that is, the adhesive layer 12 is in contact with the substrate 11). The protective film forming film 13 is laminated on the entire surface of the protective film forming film 13 (that is, the AND and the adhesive layer 12 in the protective film forming film 13 are The adhesive layer 16 for jigs is laminated on a part of the surface on the opposite side), and the jig adhesive layer 16 is not laminated on the surface 13a of the protective film forming film 13 The surface of the adhesive layer 16 and the surface 16a of the jig adhesive layer 16 (that is, the upper surface: the surface of the jig adhesive layer 16 that is in contact with the protective film forming film 13 is the opposite side Surface and side surface: the side surface located on the center side of the composite sheet 1A for forming a protective film in the adhesive layer 16 for jigs) has a release film 15 laminated thereon.

治具用接著劑層16例如可為含有接著劑成分之單層結構,亦可為於成為芯材之片材的兩面積層有含有接著劑成分之層之複數層結構。 The adhesive layer 16 for jigs may have, for example, a single-layer structure containing adhesive components, or a multiple-layer structure in which layers containing adhesive components are layered on both areas of a sheet that becomes a core material.

圖1所示之保護膜形成用複合片1A係於剝離膜15經移除之狀態下,將半導體晶圓(圖示省略)的背面貼附於保護膜形成用膜13的表面13a,進而將治具用接著劑層16的表面16a中的上表面貼附於環框等治具而使用。 The composite sheet 1A for forming a protective film shown in FIG. 1 is a state in which the release film 15 is removed, and the back surface of a semiconductor wafer (not shown) is attached to the surface 13a of the protective film forming film 13, and then The upper surface of the surface 16a of the adhesive layer 16 for jigs is used by sticking to jigs, such as a ring frame.

圖2係以示意方式表示本發明之保護膜形成用複合片的另一實施形態之剖面圖。再者,圖2中,對與圖1所示相同之構成要素標附與圖1相同之符號,省略其詳細說明。於圖3以下之圖中亦相同。 Fig. 2 is a cross-sectional view schematically showing another embodiment of the composite sheet for forming a protective film of the present invention. In addition, in FIG. 2, the same components as those shown in FIG. 1 are assigned the same reference numerals as in FIG. 1, and detailed descriptions thereof are omitted. The same applies to the figures below Figure 3.

此處所示之保護膜形成用複合片1B除了不具備治具用接著劑層16之方面以外,與圖1所示之保護膜形成用複合片1A相同。亦即,保護膜形成用複合片1B中,於基材11的一方的表面11a積層有黏著劑層12,於黏著劑層12的 表面12a(亦即,黏著劑層12中與和基材11相接之面為相反側之面)的整個面上積層有保護膜形成用膜13,於保護膜形成用膜13的表面13a(亦即,保護膜形成用膜13中之與和黏著劑層12相接之面為相反側之面)的整個面上積層有剝離膜15。保護膜形成用膜13係上述本發明之保護膜形成用膜。 The composite sheet 1B for forming a protective film shown here is the same as the composite sheet 1A for forming a protective film shown in FIG. 1 except that it does not have the adhesive layer 16 for jigs. That is, in the composite sheet 1B for forming a protective film, the adhesive layer 12 is laminated on one surface 11a of the substrate 11, and the adhesive layer 12 is The protective film forming film 13 is laminated on the entire surface 12a (that is, the surface of the adhesive layer 12 on the opposite side to the substrate 11), and the protective film forming film 13 is laminated on the surface 13a ( That is, the release film 15 is laminated on the entire surface of the protective film forming film 13 which is the surface on the opposite side to the adhesive layer 12. The film 13 for forming a protective film is the film for forming a protective film of the present invention described above.

圖2所示之保護膜形成用複合片1B係於剝離膜15經移除之狀態下,將半導體晶圓(圖示省略)的背面貼附於保護膜形成用膜13的表面13a中的中央側之一部分區域,進而將保護膜形成用膜13的周緣部附近之區域貼附於環框等治具而使用。 The protective film forming composite sheet 1B shown in FIG. 2 is in the state where the release film 15 is removed, and the back surface of the semiconductor wafer (not shown) is attached to the center of the surface 13a of the protective film forming film 13 A partial area on the side, and the area near the peripheral edge of the protective film forming film 13 is attached to a jig such as a ring frame for use.

圖3係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 3 is a cross-sectional view schematically showing still another embodiment of the composite sheet for forming a protective film of the present invention.

此處所示之保護膜形成用複合片1C除了不具備黏著劑層12之方面以外,與圖1所示之保護膜形成用複合片1A相同。亦即,保護膜形成用複合片1C中,支持片僅由基材11所構成。另外,於基材11的一方的表面11a積層有保護膜形成用膜13,於保護膜形成用膜13的表面13a(保護膜形成用膜13中之與和基材11相接之面為相反側之面)的一部分積層有治具用接著劑層16,於保護膜形成用膜13的表面13a中未積層有治具用接著劑層16之面,及治具用接著劑層16的表面16a(亦即,上表面:治具用接著劑層16中之 與和保護膜形成用膜13相接之面為相反側之面以及側面:亦即,治具用接著劑層16中位於保護膜形成用複合片1C的中央側之側面)積層有剝離膜15。保護膜形成用膜13係上述本發明之保護膜形成用膜。 The composite sheet 1C for forming a protective film shown here is the same as the composite sheet 1A for forming a protective film shown in FIG. 1 except that it does not include the adhesive layer 12. That is, in the composite sheet 1C for forming a protective film, the support sheet is composed of only the base material 11. In addition, a protective film formation film 13 is laminated on one surface 11a of the base material 11, and a protective film formation film 13 is laminated on the surface 13a (the protective film formation film 13 is opposite to the surface in contact with the base material 11). A part of the side surface) is laminated with an adhesive layer 16 for jigs. On the surface 13a of the protective film forming film 13 where the adhesive layer 16 for jigs is not laminated, and the surface of the adhesive layer 16 for jigs 16a (that is, upper surface: one of the adhesive layer 16 for jig The surface in contact with the protective film forming film 13 is the opposite side and the side surface: that is, the side surface located on the center side of the protective film forming composite sheet 1C in the jig adhesive layer 16) is laminated with a release film 15 . The film 13 for forming a protective film is the film for forming a protective film of the present invention described above.

圖3所示之保護膜形成用複合片1C係與圖1所示之保護膜形成用複合片1A同樣地,於剝離膜15經移除之狀態下,將半導體晶圓(圖示省略)的背面貼附於保護膜形成用膜13的表面13a,進而將治具用接著劑層16的表面16a中的上面貼附於環框等治具而使用。 The composite sheet 1C for forming a protective film shown in FIG. 3 is the same as the composite sheet 1A for forming a protective film shown in FIG. 1. With the release film 15 removed, the semiconductor wafer (not shown) The back surface is attached to the surface 13a of the protective film forming film 13, and the upper surface of the surface 16a of the adhesive layer 16 for jigs is attached to jigs such as a ring frame for use.

圖4係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 4 is a cross-sectional view schematically showing yet another embodiment of the composite sheet for forming a protective film of the present invention.

此處所示之保護膜形成用複合片1D除了不具備治具用接著劑層16之方面以外,與圖3所示之保護膜形成用複合片1C相同。亦即,保護膜形成用複合片1D中,於基材11的一方的表面11a積層有保護膜形成用膜13,於保護膜形成用膜13的表面13a(保護膜形成用膜13中之與和基材11相接之面為相反側之面)的整個面上積層有剝離膜15。保護膜形成用膜13係上述本發明之保護膜形成用膜。 The composite sheet 1D for forming a protective film shown here is the same as the composite sheet 1C for forming a protective film shown in FIG. 3 except that it does not include the adhesive layer 16 for jigs. That is, in the composite sheet 1D for forming a protective film, the protective film forming film 13 is laminated on one surface 11a of the base material 11, and the surface 13a of the protective film forming film 13 (the sum of the protective film forming film 13 The release film 15 is laminated on the entire surface of the surface in contact with the substrate 11 (the surface on the opposite side). The film 13 for forming a protective film is the film for forming a protective film of the present invention described above.

圖4所示之保護膜形成用複合片1D係與圖2所示之保護膜形成用複合片1B同樣地,於剝離膜15經移除之狀態下,將半導體晶圓(圖示省略)的背面貼附於保護膜形成用 膜13的表面13a中的中央側之一部分區域,進而將保護膜形成用膜13的周緣部附近之區域貼附於環框等治具而使用。 The composite sheet 1D for forming a protective film shown in FIG. 4 is the same as the composite sheet 1B for forming a protective film shown in FIG. 2. With the release film 15 removed, the semiconductor wafer (not shown) The back is attached to the protective film to form A part of the area on the central side of the surface 13a of the film 13, and the area near the periphery of the protective film forming film 13 is attached to a jig such as a ring frame for use.

圖5係以示意方式表示本發明之保護膜形成用複合片的又另一實施形態之剖面圖。 Fig. 5 is a cross-sectional view schematically showing still another embodiment of the composite sheet for forming a protective film of the present invention.

此處所示之保護膜形成用複合片1E除了保護膜形成用膜的形狀不同之方面以外,與圖2所示之保護膜形成用複合片1B相同。亦即,保護膜形成用複合片1E係於基材11上具備黏著劑層12,於黏著劑層12上具備保護膜形成用膜23而成。支持片10係基材11及黏著劑層12之積層體,換言之,保護膜形成用複合片1E具有在支持片10的一方的表面10a(亦即,黏著劑層12側之表面)上積層有保護膜形成用膜23之結構。另外,保護膜形成用複合片1E進而於保護膜形成用膜23上具備剝離膜15。保護膜形成用膜23係上述本發明之保護膜形成用膜,除了形狀不同之方面以外,與保護膜形成用膜13相同。 The composite sheet 1E for forming a protective film shown here is the same as the composite sheet 1B for forming a protective film shown in FIG. 2 except that the shape of the film for forming a protective film is different. That is, the composite sheet 1E for forming a protective film is formed by including an adhesive layer 12 on a base material 11 and a protective film forming film 23 on the adhesive layer 12. The support sheet 10 is a laminate of the base material 11 and the adhesive layer 12. In other words, the protective film forming composite sheet 1E has a layer on one surface 10a of the support sheet 10 (that is, the surface on the adhesive layer 12 side) The structure of the film 23 for forming a protective film. In addition, the composite sheet 1E for forming a protective film further includes a release film 15 on the film 23 for forming a protective film. The protective film forming film 23 is the protective film forming film of the present invention described above, and is the same as the protective film forming film 13 except for the difference in shape.

保護膜形成用複合片1E中,於基材11的一方的表面11a積層有黏著劑層12,於黏著劑層12的表面12a(亦即,與和基材11a相接之面為相反側之面)的一部分積層有保護膜形成用膜23。另外,於黏著劑層12的表面12a中未積層有保護膜形成用膜23之面,及保護膜形成用膜23的表面23a(上表面及側面:亦即,保護膜形成用膜23中之未與黏 著劑層12相接之面)上積層有剝離膜15。 In the composite sheet 1E for forming a protective film, an adhesive layer 12 is laminated on one surface 11a of the substrate 11, and an adhesive layer 12 is laminated on the surface 12a of the adhesive layer 12 (that is, the surface on the opposite side to the surface contacting the substrate 11a). The protective film forming film 23 is laminated on a part of the surface). In addition, on the surface 12a of the adhesive layer 12, the surface on which the protective film forming film 23 is not laminated, and the surface 23a of the protective film forming film 23 (upper and side surfaces: that is, one of the protective film forming films 23 Not sticky A release film 15 is laminated on the surface where the adhesive layer 12 contacts.

自上方朝下看而俯視保護膜形成用複合片1E時,保護膜形成用膜23的表面積小於黏著劑層12,例如具有圓形等形狀。 When the composite sheet 1E for protective film formation is viewed from above, the surface area of the protective film formation film 23 is smaller than that of the adhesive layer 12, and it has a shape, such as a circle, for example.

圖5所示之保護膜形成用複合片1E係於剝離膜15經移除之狀態下,將半導體晶圓(圖示省略)的背面貼附於保護膜形成用膜23的表面23a,進而將黏著劑層12的表面12a中未積層有保護膜形成用膜23之面貼附於環框等治具而使用。 The protective film forming composite sheet 1E shown in FIG. 5 is in a state where the release film 15 is removed, and the back surface of the semiconductor wafer (not shown) is attached to the surface 23a of the protective film forming film 23, and then the The surface 12a of the adhesive layer 12 on which the protective film forming film 23 is not laminated is attached to a jig such as a ring frame for use.

本發明之保護膜形成用複合片並不限定於圖1至圖5所示,亦可為在無損本發明的效果之範圍內,對圖1至圖5所示之保護膜形成用複合片的一部分結構進行變更或刪減而成,或對以上所說明之保護膜形成用複合片進而追加其他結構而成。 The composite sheet for forming a protective film of the present invention is not limited to those shown in FIGS. 1 to 5, and may be a composite sheet for forming a protective film shown in FIGS. 1 to 5 within a range that does not impair the effects of the present invention. Part of the structure is changed or deleted, or another structure is added to the composite sheet for forming a protective film described above.

例如,圖3及圖4所示之保護膜形成用複合片中,亦可於基材11與保護膜形成用膜13之間設置中間層。 For example, in the composite sheet for forming a protective film shown in FIGS. 3 and 4, an intermediate layer may be provided between the base material 11 and the film 13 for forming a protective film.

作為中間層,可根據目的任意選擇。 As the intermediate layer, it can be arbitrarily selected according to the purpose.

另外,圖1、圖2及圖5所示之保護膜形成用複合片中,亦可於基材11與黏著劑層12之間設置中間層。亦即,本發明之保護膜形成用複合片中,支持片亦可依序積層基材、中間層及黏著劑層而成。此處,所謂中間層係與圖3及 圖4所示之保護膜形成用複合片中的中間層相同。 In addition, in the composite sheet for forming a protective film shown in FIGS. 1, 2 and 5, an intermediate layer may be provided between the base material 11 and the adhesive layer 12. That is, in the composite sheet for forming a protective film of the present invention, the support sheet may be formed by sequentially laminating a base material, an intermediate layer, and an adhesive layer. Here, the so-called intermediate layer system and Figure 3 and The intermediate layer in the composite sheet for forming a protective film shown in FIG. 4 is the same.

另外,圖1至圖5所示之保護膜形成用複合片亦可於任意部位設置有前述中間層以外的層。 In addition, the composite sheet for forming a protective film shown in FIGS. 1 to 5 may be provided with a layer other than the aforementioned intermediate layer at any position.

繼而,對構成保護膜形成用複合片之除保護膜形成用膜以外的要素更詳細地進行說明。 Next, the elements constituting the composite sheet for protective film formation other than the film for protective film formation will be described in more detail.

<基材> <Substrate>

基材的材質較佳為各種樹脂,作為其具體例,可列舉:聚乙烯(低密度聚乙烯(有時簡稱為LDPE(low density polyethylene))、直鏈低密度聚乙烯(有時簡稱為LLDPE(linear low density polyethylene))、高密度聚乙烯(有時簡稱為HDPE(high density polyethylene))等、聚丙烯、乙烯-丙烯共聚物、聚丁烯、聚丁二烯、聚甲基戊烯、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚胺甲酸乙酯、聚丙烯酸胺甲酸乙酯、聚醯亞胺、乙烯-乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯、氟樹脂、該等任一樹脂之氫化物、改質物、交聯物或共聚物等。 The material of the base material is preferably various resins. As specific examples thereof, polyethylene (low density polyethylene (sometimes abbreviated as LDPE (low density polyethylene)), linear low-density polyethylene (sometimes abbreviated as LLDPE) (linear low density polyethylene)), high density polyethylene (sometimes referred to as HDPE (high density polyethylene)), etc., polypropylene, ethylene-propylene copolymer, polybutene, polybutadiene, polymethylpentene, Polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyurethane, polyurethane acrylate, polyamide Imine, ethylene-vinyl acetate copolymer, ionic polymer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, polystyrene, polycarbonate, fluororesin, etc. Any hydride, modified, cross-linked or copolymer of any resin.

基材的厚度可根據目的適當選擇,較佳為50μm至300μm,更佳為60μm至100μm。藉由使基材的厚度為上述範圍,前述保護膜形成用複合片的可撓性,及對半導體晶圓或半導體晶片之貼附性進一步提高。 The thickness of the substrate can be appropriately selected according to the purpose, and is preferably 50 μm to 300 μm, more preferably 60 μm to 100 μm. By setting the thickness of the base material within the above range, the flexibility of the composite sheet for forming a protective film and the adhesion to the semiconductor wafer or the semiconductor wafer are further improved.

基材可由1層(單層)所構成,亦可由2層以上之複數層(例如,2層至4層)所構成。於基材由複數層構成之情形時,該等複數層可互為相同亦可互為不同。亦即,可全部層相同,亦可全部層皆不同,還可僅一部分層相同。另外,於複數層相互不同之情形時,該等複數層之組合並無特別限定。此處,所謂複數層相互不同,表示各層的材質及厚度之至少一者相互不同。 The substrate may be composed of one layer (single layer), or may be composed of two or more layers (for example, two to four layers). When the substrate is composed of multiple layers, the multiple layers may be the same or different from each other. That is, all the layers may be the same, all the layers may be different, or only a part of the layers may be the same. In addition, when the plural layers are different from each other, the combination of the plural layers is not particularly limited. Here, the term that the plural layers are different from each other means that at least one of the material and thickness of each layer is different from each other.

再者,於基材由複數層構成之情形時,使各層的合計厚度為上述較佳的基材厚度即可。 Furthermore, when the base material is composed of a plurality of layers, the total thickness of each layer may be the above-mentioned preferable base material thickness.

基材的表面亦可經實施以下處理,以提高與設置於基材上之黏著劑層等其他層之密接性:藉由噴砂處理、溶劑處理等實施之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧、紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理等。另外,基材的表面亦可經實施塗底處理。 The surface of the substrate can also be subjected to the following treatments to improve the adhesion with other layers such as the adhesive layer provided on the substrate: concave-convex treatment by sandblasting, solvent treatment, etc.; corona discharge treatment, electronics Oxidation treatments such as beam irradiation treatment, plasma treatment, ozone, ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment, etc. In addition, the surface of the substrate may also be subjected to primer treatment.

<黏著劑層> <Adhesive layer>

前述黏著劑層可由公知的成分適當構成。 The aforementioned adhesive layer can be appropriately composed of known components.

黏著劑層可使用含有用以構成該黏著劑層之各種成分之黏著劑組成物形成。黏著劑組成物中的於常溫不會氣化的成分之彼此的含量比率通常與黏著劑層的前述成分彼此的含量比率相同。 The adhesive layer can be formed using an adhesive composition containing various components for constituting the adhesive layer. The content ratio of the components that do not vaporize at room temperature in the adhesive composition is usually the same as the content ratio of the aforementioned components of the adhesive layer.

於黏著劑層含有藉由照射能量線而聚合之成分之情形時,藉由照射能量線降低其黏著性,可容易地拾取半導體晶片。此種黏著劑層例如可使用含有能量線聚合性的丙烯酸系聚合物等藉由照射能量線而聚合之成分之各種黏著劑組成物形成。 In the case where the adhesive layer contains a component that is polymerized by irradiating energy rays, the adhesiveness is reduced by irradiating energy rays, and the semiconductor chip can be easily picked up. Such an adhesive layer can be formed using various adhesive compositions containing components polymerized by irradiation of energy rays, such as an energy-ray polymerizable acrylic polymer.

作為黏著劑組成物中較佳者,例如,若為含有藉由照射能量線而聚合之成分之黏著劑組成物(能量線硬化性黏著劑組成物),則可列舉:含有前述丙烯酸系聚合物與能量線聚合性化合物之黏著劑組成物(有時稱為黏著劑組成物(i));含有具有羥基且於側鏈具有聚合性基之丙烯酸系聚合物(例如,具有羥基,且經由胺甲酸乙酯鍵而於側鏈具有聚合性基之丙烯酸系聚合物),及異氰酸酯系交聯劑之黏著劑組成物(有時稱為黏著劑組成物(ii)),較佳為進而含有溶劑。 A preferable one among the adhesive composition is, for example, if it is an adhesive composition (energy-ray curable adhesive composition) containing a component polymerized by irradiation of energy rays, it may include: containing the aforementioned acrylic polymer Adhesive composition with energy-ray polymerizable compound (sometimes referred to as adhesive composition (i)); containing an acrylic polymer having a hydroxyl group and a polymerizable group in the side chain (for example, having a hydroxyl group and passing through an amine The adhesive composition (sometimes referred to as the adhesive composition (ii)) of an acrylic polymer having a polymerizable group on the side chain with an ethyl formate bond) and an isocyanate crosslinking agent, preferably further containing a solvent .

前述黏著劑組成物除了上述成分以外,亦可進而含有光聚合起始劑、或染料、顏料、抗劣化劑、抗靜電劑、阻燃劑、聚矽氧化合物、鏈轉移劑等各種添加劑之任一種。 In addition to the above-mentioned components, the aforementioned adhesive composition may further contain any of various additives such as photopolymerization initiators, dyes, pigments, anti-deterioration agents, antistatic agents, flame retardants, silicone compounds, and chain transfer agents. One kind.

另外,作為黏著劑組成物中較佳係例如,若為並不含有藉由照射能量線而聚合之成分之黏著劑組成物(非能量線硬化性黏著劑組成物),則可列舉含有丙烯酸系樹脂及交聯劑之黏著劑組成物(有時稱為黏著劑組成物(iii))等, 亦可含有溶劑,及不屬於溶劑之其他成分等任意成分。 In addition, the adhesive composition is preferably, for example, if it is an adhesive composition (non-energy-ray curable adhesive composition) that does not contain a component that is polymerized by irradiation of energy rays, an acrylic-based Adhesive composition of resin and crosslinking agent (sometimes called adhesive composition (iii)), etc., It can also contain solvents and other components that are not solvents.

黏著劑層的厚度可根據目的適當選擇,較佳為1μm至100μm,更佳為1μm至60μm,特佳為1μm至30μm。 The thickness of the adhesive layer can be appropriately selected according to the purpose, and is preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, particularly preferably 1 μm to 30 μm.

黏著劑組成物例如可藉由調配丙烯酸系聚合物等用以構成黏著劑層之各成分而獲得,例如,除了調配成分不同之方面以外,可利用與上述保護膜形成用組成物之情形同樣的方法獲得。 The adhesive composition can be obtained, for example, by blending acrylic polymers and other components for constituting the adhesive layer. For example, except for the difference in the blending components, the same as that of the protective film forming composition can be used. Method to obtain.

黏著劑層可藉由在目標部位塗敷黏著劑組成物並加以乾燥而形成。 The adhesive layer can be formed by applying an adhesive composition to the target site and drying it.

此時,視需要亦可對所塗敷之黏著劑組成物進行加熱,藉此產生交聯。雖然加熱條件例如可設為於100℃至130℃進行1分鐘至5分鐘,但並不限定於此。 At this time, if necessary, the applied adhesive composition can be heated to generate crosslinking. Although heating conditions can be set to 100 degreeC-130 degreeC for 1 minute to 5 minutes, for example, it is not limited to this.

再者,於隔著支持片對目標部位照射能量線之情形時,構成支持片之基材、黏著劑層等各層較佳為能量線之透過率高。 Furthermore, when energy ray is irradiated to the target part through the support sheet, each layer such as the base material and the adhesive layer constituting the support sheet preferably has a high energy ray transmittance.

以下,對保護膜形成用複合片之製造方法詳細地進行說明。 Hereinafter, the manufacturing method of the composite sheet for protective film formation is demonstrated in detail.

<保護膜形成用複合片之製造方法> <Method for manufacturing composite sheet for forming protective film>

本發明之保護膜形成用複合片可藉由在支持片的一 方的表面上形成上述本發明之保護膜形成用膜而製造。 The composite sheet for forming a protective film of the present invention can be used on one of the supporting sheets It is manufactured by forming the protective film forming film of the present invention on the surface of the square.

例如,具備僅由基材所構成之支持片之保護膜形成用複合片可藉由以下方式製造:於基材的表面塗敷保護膜形成用組成物並加以乾燥,藉此形成保護膜形成用膜,視需要於保護膜形成用膜上設置治具用接著劑層或剝離膜等其他層(膜)。此時之保護膜形成用膜的形成條件與上述方法相同。 For example, a composite sheet for forming a protective film having a support sheet composed of only a base material can be manufactured by applying a composition for forming a protective film on the surface of the base material and drying to form a protective film For the film, if necessary, another layer (film) such as an adhesive layer for jigs or a release film is provided on the film for forming a protective film. The formation conditions of the protective film formation film at this time are the same as the above-mentioned method.

此種製造方法適宜作為例如圖3及圖4所示之保護膜形成用複合片之製造方法。 Such a manufacturing method is suitable as a manufacturing method of the composite sheet for protective film formation shown in FIG. 3 and FIG. 4, for example.

另外,例如具備在基材上積層黏著劑層而成之支持片之保護膜形成用複合片可藉由以下方式製造:於基材的表面塗敷黏著劑組成物並加以乾燥,藉此形成黏著劑層,進而使用保護膜形成用組成物於黏著劑層上設置保護膜形成用膜,視需要於保護膜形成用膜上設置治具用接著劑層或剝離膜等其他層(膜)。 In addition, for example, a composite sheet for forming a protective film having a support sheet formed by laminating an adhesive layer on a substrate can be manufactured by applying an adhesive composition on the surface of the substrate and drying to form an adhesive For the agent layer, a protective film forming film is further provided on the adhesive layer using the protective film forming composition, and other layers (films) such as a jig adhesive layer or a release film are provided on the protective film forming film as necessary.

該情形時,例如可於黏著劑層上塗敷保護膜形成用組成物而設置保護膜形成用膜。但是,通常基材、黏著劑層及保護膜形成用膜之積層結構較佳為藉由先另行形成保護膜形成用膜,並將其貼合於黏著劑層的表面而形成,例如將藉由在剝離膜的剝離層表面塗敷保護膜形成用組成物並加以乾燥而形成之保護膜形成用膜貼合於黏著劑層的表面,視需要將前述剝離膜移除等。 In this case, for example, a protective film formation composition can be applied to the adhesive layer to provide a protective film formation film. However, in general, the laminated structure of the substrate, the adhesive layer, and the protective film forming film is preferably formed by separately forming the protective film forming film and bonding it to the surface of the adhesive layer, for example, by The protective film forming film formed by coating the protective film forming composition on the surface of the peeling layer of the peeling film and drying is attached to the surface of the adhesive layer, and the peeling film is removed if necessary.

另外,基材、黏著劑層及保護膜形成用膜之積層結構除了上述方法以外,亦可例如藉由以下方式形成:使用黏著劑組成物於剝離膜上形成黏著劑層,使用保護膜形成用組成物於另一剝離膜上形成保護膜形成用膜,然後將該等剝離膜上之黏著劑層及保護膜形成用膜重疊,移除積層於黏著劑層之剝離膜,於露出之黏著劑層表面(黏著劑層的未設置保護膜形成用膜之面)貼合基材。 In addition, the laminated structure of the substrate, the adhesive layer, and the protective film formation film can be formed by, for example, the following method: using an adhesive composition to form an adhesive layer on the release film, and using a protective film formation The composition forms a protective film forming film on another release film, and then overlaps the adhesive layer and the protective film forming film on the release film, and removes the release film laminated on the adhesive layer to expose the adhesive The layer surface (the surface of the adhesive layer on which the protective film formation film is not provided) is bonded to the base material.

上述任一種方法均可藉由在形成基材、黏著劑層及保護膜形成用膜之積層結構後,視需要於保護膜形成用膜上設置治具用接著劑層或剝離膜等其他層(膜),而製造具備在基材上積層黏著劑層而成之支持片之保護膜形成用複合片。於任一情形時,黏著劑層及保護膜形成用膜的形成條件均與上述方法相同。 Any of the above methods can be achieved by forming a layered structure of the substrate, adhesive layer, and protective film forming film, and then, if necessary, providing other layers such as a jig adhesive layer or a release film on the protective film forming film ( Film) to produce a composite sheet for forming a protective film having a support sheet formed by laminating an adhesive layer on a substrate. In either case, the formation conditions of the adhesive layer and the protective film formation film are the same as the above-mentioned method.

此種製造方法適宜作為例如圖1、圖2及圖5所示之保護膜形成用複合片之製造方法。 Such a manufacturing method is suitable as, for example, the manufacturing method of the composite sheet for forming a protective film shown in FIGS. 1, 2 and 5.

例如,製造如圖5所示般,自上方朝下看而俯視保護膜形成用複合片時,保護膜形成用膜的表面積小於黏著劑層之保護膜形成用複合片之情形時,於上述製造方法中,只要將預先切割成預定大小及形狀之保護膜形成用膜設置於黏著劑層上即可。 For example, when manufacturing a composite sheet for forming a protective film as shown in FIG. 5, when looking down from above and looking down on a composite sheet for forming a protective film, the surface area of the film for forming a protective film is smaller than that of the adhesive layer. In the method, the protective film forming film that has been cut into a predetermined size and shape in advance is only required to be placed on the adhesive layer.

<保護膜形成用膜或保護膜形成用複合片的使用方法> <How to use the protective film formation film or the protective film formation composite sheet>

作為本發明之保護膜形成用膜或保護膜形成用複合片的使用方法,例如可列舉以下所示之使用方法1至使用方法4。 As a method of using the film for forming a protective film or a composite sheet for forming a protective film of the present invention, for example, use method 1 to use method 4 shown below can be cited.

[使用方法1] [How to use 1]

使用方法1中,首先將保護膜形成用複合片的保護膜形成用膜貼附於半導體晶圓的背面,並且將保護膜形成用複合片固定於切割裝置。 In the use method 1, first, the protective film formation film of the protective film formation composite sheet is attached to the back surface of the semiconductor wafer, and the protective film formation composite sheet is fixed to the dicing device.

繼而,藉由照射能量線,使保護膜形成用膜硬化而形成保護膜。使用習知技術的保護膜形成用膜之情形時,藉由加熱使保護膜形成用膜硬化例如需要數小時左右之長時間,相較之下,本發明之保護膜形成用膜藉由照射能量線,即便於例如數秒左右等未達1分鐘之短時間內亦可硬化,可在大幅短於習知技術之時間內獲得附有保護膜之半導體晶片。 Then, by irradiating energy rays, the protective film forming film is cured to form a protective film. When the conventional protective film formation film is used, it takes a long time, for example, about several hours to harden the protective film formation film by heating. In contrast, the protective film formation film of the present invention is irradiated with energy The wire can be cured even in a short time of less than 1 minute, such as a few seconds or so, and a semiconductor chip with a protective film can be obtained in a much shorter time than the conventional technology.

再者,於半導體晶圓的表面(電極形成面)貼附有背面研磨帶之情形時,通常,將該背面研磨帶自半導體晶圓移除後,進行保護膜形成用膜之硬化。 Furthermore, when a back polishing tape is attached to the surface (electrode formation surface) of a semiconductor wafer, usually, the back polishing tape is removed from the semiconductor wafer, and then the protective film forming film is cured.

繼而,切割半導體晶圓而形成半導體晶片。 Then, the semiconductor wafer is cut to form a semiconductor wafer.

繼而,將半導體晶片連同貼附於其背面之保護膜一起 自支持片剝離而進行拾取,藉此獲得附有保護膜之半導體晶片。當支持片係於基材上積層黏著劑層而成時,作為黏著劑層,使用不含有藉由照射能量線而聚合之成分之非能量線硬化性黏著劑層。 Then, the semiconductor chip together with the protective film attached to its back The self-supporting sheet is peeled off and picked up, thereby obtaining a semiconductor wafer with a protective film. When the support sheet is formed by laminating an adhesive layer on a base material, as the adhesive layer, a non-energy-ray-curable adhesive layer that does not contain components that are polymerized by irradiation with energy rays is used.

使用方法1中,亦可在將保護膜形成用膜貼附於半導體晶圓之後至進行切割期間之任一時間點,隔著支持片對保護膜形成用膜或保護膜照射雷射光,而對保護膜形成用膜或保護膜進行印刷。於對保護膜形成用膜進行印刷之情形時,藉由使該膜硬化,而獲得有印刷之保護膜。 In the use method 1, it is also possible to irradiate the protective film formation film or the protective film with laser light through the support sheet at any time after the protective film formation film is attached to the semiconductor wafer to the dicing period. The protective film formation film or protective film is printed. In the case of printing the film for forming a protective film, by curing the film, a printed protective film is obtained.

再者,進行印刷之情形時,有時產生氣體,雖然該氣體成為導致最終在支持片與保護膜之間剝離之原因,於對保護膜形成用膜進行印刷之情形時,較之對保護膜進行印刷之情形,可降低該剝離之頻率或程度。 In addition, when printing, gas is sometimes generated. Although this gas may cause the final peeling between the support sheet and the protective film, when printing on the protective film formation film, compared to the protective film In the case of printing, the frequency or degree of peeling can be reduced.

推測其原因在於,保護膜形成用膜與支持片之密接性高於保護膜與支持片之密接性。 It is presumed that the reason is that the adhesiveness between the protective film forming film and the support sheet is higher than the adhesiveness between the protective film and the support sheet.

[使用方法2] [How to use 2]

使用方法2中,首先將保護膜形成用膜貼附於半導體晶圓的背面。 In the use method 2, first, the protective film formation film is attached to the back surface of the semiconductor wafer.

繼而,藉由照射能量線,使保護膜形成用膜硬化而形成保護膜。藉此,與上述使用方法1之情形同樣地,在大幅短於習知技術之時間內獲得附有保護膜之半導體晶片。於半導體晶圓的表面(電極形成面)貼附有背面研磨帶之 情形時,通常,將該背面研磨帶自半導體晶圓移除後,進行保護膜形成用膜之硬化。 Then, by irradiating energy rays, the protective film forming film is cured to form a protective film. Thereby, as in the case of the above-mentioned use method 1, a semiconductor chip with a protective film can be obtained in a much shorter time than the conventional technique. On the surface of the semiconductor wafer (electrode formation surface) is attached with a back polishing tape In this case, usually, after removing the back polishing tape from the semiconductor wafer, the protective film forming film is cured.

繼而,於保護膜的露出面貼附支持片。當支持片係於基材上積層黏著劑層而成時,作為黏著劑層,可使用含有藉由照射能量線而聚合之成分之能量線硬化性黏著劑層,及上述非能量線硬化性黏著劑層之任一者。 Then, a support sheet was attached to the exposed surface of the protective film. When the support sheet is formed by laminating an adhesive layer on a substrate, as the adhesive layer, an energy-ray curable adhesive layer containing a component polymerized by irradiation with energy rays, and the above-mentioned non-energy-ray curable adhesive can be used Any of the agent layers.

繼而,切割半導體晶圓而形成半導體晶片。 Then, the semiconductor wafer is cut to form a semiconductor wafer.

繼而,將半導體晶片連同貼附於其背面之保護膜一起自支持片剝離而進行拾取,藉此獲得附有保護膜之半導體晶片。當支持片係於基材上積層黏著劑層而成時,藉由使黏著劑層硬化,可更容易地拾取附有保護膜之半導體晶片。 Then, the semiconductor chip is peeled from the support sheet together with the protective film attached to the back surface and picked up, thereby obtaining the semiconductor chip with the protective film. When the support sheet is formed by laminating an adhesive layer on the substrate, the semiconductor chip with the protective film can be picked up more easily by hardening the adhesive layer.

使用方法2中,亦可在將保護膜形成用膜貼附於半導體晶圓之後至進行切割期間之任一時間點,直接對保護膜形成用膜照射雷射光,或隔著支持片對保護膜照射雷射光,而對保護膜形成用膜或保護膜進行印刷。於對保護膜形成用膜進行印刷之情形時,藉由使該膜硬化,而獲得有印刷之保護膜。 In the use method 2, it is also possible to directly irradiate the protective film formation film with laser light or to directly irradiate the protective film formation film to the protective film at any point during the dicing period after the protective film formation film is attached to the semiconductor wafer The laser light is irradiated to print the protective film forming film or protective film. In the case of printing the film for forming a protective film, by curing the film, a printed protective film is obtained.

[使用方法3] [How to use 3]

使用方法3中,首先將保護膜形成用膜貼附於半導體 晶圓的背面。 In use method 3, first attach the protective film forming film to the semiconductor The back side of the wafer.

繼而,於保護膜形成用膜的露出面貼附支持片。當支持片係於基材上積層黏著劑層而成時,作為黏著劑層,使用非能量線硬化性黏著劑層。 Then, a support sheet was attached to the exposed surface of the film for forming a protective film. When the support sheet is formed by laminating an adhesive layer on the base material, a non-energy ray-curable adhesive layer is used as the adhesive layer.

繼而,藉由照射能量線,使保護膜形成用膜硬化而形成保護膜。藉此,與上述使用方法1之情形同樣地,在大幅短於習知技術之時間內獲得附有保護膜之半導體晶片。於半導體晶圓的表面(電極形成面)貼附有背面研磨帶之情形時,通常,將該背面研磨帶自半導體晶圓移除後,進行保護膜形成用膜之硬化。 Then, by irradiating energy rays, the protective film forming film is cured to form a protective film. Thereby, as in the case of the above-mentioned use method 1, a semiconductor chip with a protective film can be obtained in a much shorter time than the conventional technique. When a back polishing tape is attached to the surface (electrode formation surface) of a semiconductor wafer, normally, the back polishing tape is removed from the semiconductor wafer, and then the protective film forming film is cured.

繼而,切割半導體晶圓而形成半導體晶片。 Then, the semiconductor wafer is cut to form a semiconductor wafer.

繼而,將半導體晶片連同貼附於其背面之保護膜一起自支持片剝離而進行拾取,藉此獲得附有保護膜之半導體晶片。 Then, the semiconductor chip is peeled from the support sheet together with the protective film attached to the back surface and picked up, thereby obtaining the semiconductor chip with the protective film.

使用方法3中,亦可在將保護膜形成用膜貼附於半導體晶圓之後至進行切割期間之任一時間點,直接或隔著支持片對保護膜形成用膜照射雷射光,而對保護膜形成用膜進行印刷,或者隔著支持片對保護膜照射雷射光,而對保護膜進行印刷。於對保護膜形成用膜進行印刷之情形時,藉由使該膜硬化,而獲得有印刷之保護膜。 In use method 3, it is also possible to irradiate the protective film formation film with laser light directly or through a support sheet at any time between the time after the protective film formation film is attached to the semiconductor wafer and the dicing period to protect the The film for film formation is printed, or the protective film is irradiated with laser light through the support sheet to print the protective film. In the case of printing the film for forming a protective film, by curing the film, a printed protective film is obtained.

再者,在貼附支持片之後對保護膜形成用膜進行印刷之情形時,與上述使用方法1之情形同樣地,較之對保護 膜進行印刷之情形,可降低支持片與保護膜之間產生剝離之頻率或程度。 Furthermore, when printing the protective film forming film after attaching the support sheet, it is the same as the case of the above-mentioned use method 1, compared to the protective film When the film is printed, the frequency or degree of peeling between the support sheet and the protective film can be reduced.

[使用方法4] [How to use 4]

使用方法4中,首先將保護膜形成用膜貼附於半導體晶圓的背面。 In the use method 4, the protective film forming film is first attached to the back surface of the semiconductor wafer.

繼而,於保護膜形成用膜的露出面貼附支持片。當支持片係於基材上積層黏著劑層而成時,作為黏著劑層,使用非能量線硬化性黏著劑層。 Then, a support sheet was attached to the exposed surface of the film for forming a protective film. When the support sheet is formed by laminating an adhesive layer on the base material, a non-energy ray-curable adhesive layer is used as the adhesive layer.

繼而,切割半導體晶圓而形成半導體晶片。 Then, the semiconductor wafer is cut to form a semiconductor wafer.

繼而,藉由照射能量線,使保護膜形成用膜硬化而形成保護膜。藉此,與上述使用方法1之情形同樣地,在大幅短於習知技術之時間內獲得附有保護膜之半導體晶片。 Then, by irradiating energy rays, the protective film forming film is cured to form a protective film. Thereby, as in the case of the above-mentioned use method 1, a semiconductor chip with a protective film can be obtained in a much shorter time than the conventional technique.

繼而,將半導體晶片連同貼附於其背面之保護膜一起自支持片剝離而進行拾取,藉此獲得附有保護膜之半導體晶片。 Then, the semiconductor chip is peeled from the support sheet together with the protective film attached to the back surface and picked up, thereby obtaining the semiconductor chip with the protective film.

使用方法4中,亦可在將保護膜形成用膜貼附於半導體晶圓之後至進行切割期間之任一時間點,直接或隔著支持片對保護膜形成用膜照射雷射光,而對保護膜形成用膜進行印刷。藉由使實施有印刷之保護膜形成用膜硬化,而獲得有印刷之保護膜。 In use method 4, it is also possible to irradiate the protective film formation film with laser light directly or via a support sheet at any time between the time after the protective film formation film is attached to the semiconductor wafer and the dicing period to protect the The film for film formation is printed. The printed protective film is cured by curing the printed protective film.

再者,使用方法4中,在貼附支持片之後對保護膜形 成用膜進行印刷之情形時,與上述使用方法1之情形同樣地,較之其他使用方法中對保護膜進行印刷之情形,可降低支持片與保護膜之間產生剝離之頻率或程度。 Furthermore, in the use method 4, after attaching the support sheet, the protective film In the case of printing on the formed film, as in the case of the above-mentioned use method 1, compared to the case of printing the protective film in other use methods, the frequency or degree of peeling between the support sheet and the protective film can be reduced.

藉由使用本發明之保護膜形成用膜或保護膜形成用複合片,至獲得附有保護膜之半導體晶片期間,前述保護膜具有充分高的保護作用。因此,抑制半導體晶片中產生裂痕或缺口,例如抑制崩裂。另外,前述保護膜即便暴露於大的溫度變化之下,亦可維持此種高保護作用,具有高可靠性。 By using the protective film forming film or the protective film forming composite sheet of the present invention, the protective film has a sufficiently high protective effect until the semiconductor chip with the protective film is obtained. Therefore, the generation of cracks or chipping in the semiconductor wafer is suppressed, for example, cracking is suppressed. In addition, even if the aforementioned protective film is exposed to a large temperature change, it can maintain such a high protective effect and has high reliability.

本發明之一實施形態之保護膜形成用膜的一方面可列舉以下保護膜形成用膜:用以於半導體晶圓或半導體晶片的背面形成保護膜;保護膜形成用膜包含能量線硬化性化合物(B),及視需要選自由聚合物成分(A)、光聚合起始劑(C)、填充材料(D)、著色劑(E)、偶合劑(F)、交聯劑(G)及通用的添加劑(H)所組成之群組中的至少一種成分;前述(B)成分包含屬於(甲基)丙烯酸酯化合物且一分子中具有2個至4個能量線聚合性基之能量線硬化性化合物(B1),前述(A)成分係重量平均分子量(Mw)為10000至2000000且玻璃轉移溫度為-60℃至70℃之丙烯酸系樹脂,前述(C)成分係由1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮1-(O-乙醯基肟)所所構成;前述(B)成分的含量相對於前述保護膜形成用膜的總質量為3質量%以上30質量%以 下;前述(B)成分中,前述(B1)成分的含量相對於前述(B)成分的總質量為90質量%以上100質量%以下,較佳為95質量%以上100質量%以下,更佳為98質量%以上100質量%以下,特佳為100質量%;包含前述(A)成分之情形時,前述(A)成分的含量相對於前述保護膜形成用膜的總質量為5質量%至50質量%,較佳為10質量%至45質量%,包含前述(C)成分之情形時,前述(C)成分的含量相對於前述保護膜形成用膜的總質量為0.1質量%至3質量%;構成前述保護膜形成用膜之各成分的合計含量不超過100質量%;進而,可列舉具有以下特性的該保護膜形成用膜。 One aspect of the protective film formation film of one embodiment of the present invention includes the following protective film formation film: used to form a protective film on the back surface of a semiconductor wafer or semiconductor wafer; the protective film formation film contains an energy ray curable compound (B), and optionally selected from polymer component (A), photopolymerization initiator (C), filler (D), coloring agent (E), coupling agent (F), crosslinking agent (G) and At least one component in the group consisting of general additives (H); the aforementioned component (B) includes energy ray hardening that is a (meth)acrylate compound and has 2 to 4 energy ray polymerizable groups in one molecule Compound (B1), the aforementioned component (A) is an acrylic resin with a weight average molecular weight (Mw) of 10,000 to 2,000,000 and a glass transition temperature of -60°C to 70°C, and the aforementioned component (C) is composed of 1-[9- Ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(O-acetyloxime) is composed; the content of the aforementioned (B) component is relative The total mass of the aforementioned protective film formation film is 3% by mass or more and 30% by mass or less Next; In the aforementioned (B) component, the content of the aforementioned (B1) component relative to the total mass of the aforementioned (B) component is 90% by mass to 100% by mass, preferably 95% by mass to 100% by mass, more preferably 98% by mass or more and 100% by mass or less, particularly preferably 100% by mass; when the aforementioned (A) component is included, the content of the aforementioned (A) component relative to the total mass of the protective film forming film is 5 mass% to 50% by mass, preferably 10% to 45% by mass. When the component (C) is included, the content of the component (C) is 0.1% to 3% by mass relative to the total mass of the protective film forming film %; The total content of the components constituting the protective film forming film does not exceed 100% by mass; further, the protective film forming film having the following characteristics can be cited.

藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物(保護膜)時,前述硬化物的楊氏模數為500MPa以上10000MPa以下,較佳為550MPa以上5000MPa以下,且斷裂伸長率為8%以上100%以下,較佳為10%以上100%以下。 When the protective film forming film is cured by irradiating energy rays to form a cured product (protective film), the Young's modulus of the cured product is 500 MPa or more and 10,000 MPa or less, preferably 550 MPa or more and 5,000 MPa or less, and elongation at break It is 8% or more and 100% or less, preferably 10% or more and 100% or less.

前述硬化物的楊氏模數亦可為590MPa以上1960MPa以下,且斷裂伸長率亦可為10.7%以上56%以下。 The Young's modulus of the aforementioned hardened product may be 590 MPa or more and 1960 MPa or less, and the elongation at break may be 10.7% or more and 56% or less.

本發明之一實施形態之保護膜形成用膜的另一方面可列舉以下保護膜形成用膜:用以於半導體晶圓或半導體晶片的背面形成保護膜;保護膜形成用膜包含選自由三環癸烷二甲醇二丙烯酸酯及ε-己內酯改質三(丙烯醯氧基乙基)異三聚氰酸酯所組成之群組中的至少一種能量線硬化性化合物(B);使選自由(甲基)丙烯酸甲酯、(甲基)丙烯酸 丁酯、(甲基)丙烯酸2-羥基乙酯及(甲基)丙烯酸縮水甘油酯所組成之群組中的至少一種單體聚合而成之聚合物成分(A);1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮1-(0-乙醯基肟)(C);以及選自由填充材料(D)、著色劑(E)、偶合劑(F)、交聯劑(G)及通用的添加劑(H)所組成之群組中的至少一種成分;且相對於前述保護膜形成用膜的總質量,前述(B)成分的含量為10質量%以上20質量%以下,前述(A)成分的含量為20質量%至32質量%,前述(C)成分的含量為0.6質量%以上;藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物(保護膜)時,前述硬化物的楊氏模數為590MPa以上1960MPa以下,且斷裂伸長率為10.7%以上56.0%以下。 Another aspect of the film for forming a protective film of an embodiment of the present invention includes the following film for forming a protective film: a film for forming a protective film on the back of a semiconductor wafer or a semiconductor wafer; At least one energy ray curable compound (B) in the group consisting of decane dimethanol diacrylate and ε-caprolactone modified tris(acryloxyethyl) isocyanurate; Free methyl (meth)acrylate, (meth)acrylic acid Polymer component (A) formed by polymerization of at least one monomer in the group consisting of butyl ester, 2-hydroxyethyl (meth)acrylate and glycidyl (meth)acrylate; 1-[9-乙Group-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(0-acetyloxime) (C); and selected from filler materials (D), At least one component in the group consisting of coloring agent (E), coupling agent (F), crosslinking agent (G) and general additive (H); and relative to the total mass of the aforementioned protective film forming film, the aforementioned The content of component (B) is 10% by mass to 20% by mass, the content of component (A) is 20% to 32% by mass, and the content of component (C) is 0.6% by mass or more; When the protective film forming film is cured to form a cured product (protective film), the Young's modulus of the cured product is 590 MPa to 1960 MPa, and the elongation at break is 10.7% to 56.0%.

[實施例] [Example]

以下,藉由具體的實施例對本發明更詳細地進行說明。但是,本發明並不受以下所示之實施例任何限定。 Hereinafter, the present invention will be described in more detail with specific examples. However, the present invention is not limited at all by the examples shown below.

將用於製造保護膜形成用組成物之原料表示如下。 The raw materials used to manufacture the protective film forming composition are shown below.

‧聚合物成分(A) ‧Polymer composition (A)

(A)-1:使丙烯酸丁酯10質量份、丙烯酸甲酯70質量份、丙烯酸2-羥基乙酯15質量份、及甲基丙烯酸縮水甘油酯5質量份共聚合而成之丙烯酸系樹脂(重量平均分子量800000,玻璃轉移溫度-1℃)。 (A)-1: Acrylic resin obtained by copolymerizing 10 parts by mass of butyl acrylate, 70 parts by mass of methyl acrylate, 15 parts by mass of 2-hydroxyethyl acrylate, and 5 parts by mass of glycidyl methacrylate ( The weight average molecular weight is 800,000, and the glass transition temperature is -1°C).

‧能量線硬化性化合物(B) ‧Energy ray hardening compound (B)

(B1)-1:三環癸烷二甲醇二丙烯酸酯(日本化藥公司製造之「KAYARAD R-684」,2官能紫外線硬化性化合物,分子量304)。 (B1)-1: Tricyclodecane dimethanol diacrylate ("KAYARAD R-684" manufactured by Nippon Kayaku Co., Ltd., a bifunctional ultraviolet curable compound, molecular weight 304).

(B1)-2:ε-己內酯改質三(2-丙烯醯氧基乙基)異三聚氰酸酯(新中村化學工業公司製造之「A-9300-1CL」,3官能紫外線硬化性化合物,分子量537)。 (B1)-2: ε-caprolactone modified tris(2-propenoxyethyl) isocyanurate ("A-9300-1CL" manufactured by Shinnakamura Chemical Industry Co., Ltd., 3 functional UV curing Sexual compound, molecular weight 537).

(B2)-1:二季戊四醇六丙烯酸酯(6官能紫外線硬化性化合物,分子量578)及二季戊四醇五丙烯酸酯(5官能紫外線硬化性化合物,分子量525)之混合物(日本化藥公司製造之「KAYARAD DPHA」)。 (B2)-1: Mixture of dipentaerythritol hexaacrylate (6-functional ultraviolet curable compound, molecular weight 578) and dipentaerythritol pentaacrylate (5-functional ultraviolet curable compound, molecular weight 525) (manufactured by Nippon Kayaku Corporation "KAYARAD DPHA”).

˙光聚合起始劑(C) ˙Photopolymerization initiator (C)

(C)-1:1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-乙酮1-(O-乙醯基肟)(BASF公司製造之「Irgacure(註冊商標)OXE02」)。 (C)-1: 1-[9-Ethyl-6-(2-methylbenzyl)-9H-carbazol-3-yl]-ethanone 1-(O-acetyloxime)( "Irgacure (registered trademark) OXE02" manufactured by BASF Corporation).

‧填充材料(D) ‧Filling material (D)

(D)-1:二氧化矽填料(熔融石英填料,平均粒徑8μm)。 (D)-1: Silica filler (fused silica filler, average particle size 8μm).

‧著色劑(E) ‧Colorant (E)

(E)-1:將酞青系藍色色素(Pigment Blue 15:3)32質量份、異吲哚啉酮系黃色色素(Pigment Yellow 139)18質量份、及蒽醌系紅色色素(Pigment Red 177)50質量份加以混合,以前述3種色素的合計量/苯乙烯丙烯酸系樹脂量=1/3(質量比)之方式進行顏料化而獲得之顏料。 (E)-1: 32 parts by mass of phthalocyanine blue pigment (Pigment Blue 15:3), 18 parts by mass of isoindolinone-based yellow pigment (Pigment Yellow 139), and anthraquinone-based red pigment (Pigment Red 177) A pigment obtained by mixing 50 parts by mass, and pigmenting so that the total amount of the aforementioned 3 kinds of pigments/amount of styrene acrylic resin=1/3 (mass ratio).

‧偶合劑(F) ‧Coupling agent (F)

(F)-1:3-甲基丙烯醯氧基丙基三甲氧基矽烷(信越化學工業公司製造之「KBM-503」,矽烷偶合劑) (F)-1: 3-Methacryloxypropyltrimethoxysilane ("KBM-503" manufactured by Shin-Etsu Chemical Co., Ltd., silane coupling agent)

[實施例1] [Example 1]

<保護膜形成用膜之製造> <Production of protective film forming film>

(保護膜形成用組成物之製造) (Manufacturing of protective film forming composition)

將聚合物成分(A)-1(32質量份)、能量線硬化性化合物(B)-1(10質量份)、光聚合起始劑(C)-1(0.3質量份)、光聚合起始劑(C)-2(0.3質量份)、填充材料(D)-1(56質量份)、著色劑(E)-1(2質量份)及偶合劑(F)-1(0.4質量份)加以混合,獲得保護膜形成用組成物。將調配成分的種類及其調配量示於表1。再者,表1所示之調配量全部為固形物成分量。另外,表1中,將各成分僅以其末尾符號進行表示,例如將聚合物成分(A)簡稱為「(A)」。 Polymer component (A)-1 (32 parts by mass), energy ray curable compound (B)-1 (10 parts by mass), photopolymerization initiator (C)-1 (0.3 parts by mass), photopolymerization Starting agent (C)-2 (0.3 parts by mass), filler (D)-1 (56 parts by mass), coloring agent (E)-1 (2 parts by mass), and coupling agent (F)-1 (0.4 parts by mass) ) Are mixed to obtain a composition for forming a protective film. Table 1 shows the types of blended components and their blended amounts. In addition, all the blending amounts shown in Table 1 are solid content amounts. In addition, in Table 1, each component is shown only by the end symbol, for example, the polymer component (A) is abbreviated as "(A)".

(保護膜形成用膜之製造) (Manufacture of protective film forming film)

於將聚對苯二甲酸乙二酯製膜的單面藉由聚矽氧(silicone)處理進行剝離處理而成之剝離膜(Lintec Corporation製造之「SP-PET381031」,厚度38μm)的前述剝離處理面,使用刀式塗佈機塗敷上述所得之保護膜形成用組成物,於120℃進行乾燥,藉此獲得保護膜形成用膜(厚度25μm)。進而將與上述相同之剝離膜,以其剝離處理面與保護膜形成用膜接觸之方式貼合於所得之保護膜形成用膜的露出面,獲得保護膜形成用膜的兩面設置有前述 剝離膜之積層體。將所得之前述積層體捲取為輥狀進行保存。 The peeling treatment of the peeling film ("SP-PET381031" made by Lintec Corporation, thickness 38μm) made by peeling off one side of the polyethylene terephthalate film by silicone treatment On the surface, the protective film forming composition obtained above was applied using a knife coater, and dried at 120°C to obtain a protective film forming film (thickness 25 μm). Furthermore, the same release film as above was attached to the exposed surface of the obtained protective film formation film so that the release treatment surface was in contact with the protective film formation film, and the two sides of the protective film formation film were provided with the aforementioned Laminated body of peeling film. The obtained laminate was wound into a roll shape and stored.

<保護膜形成用膜之評價> <Evaluation of protective film forming film>

(保護膜的楊氏模數及斷裂伸長率之評價) (Evaluation of Young's modulus and elongation at break of protective film)

對上述所得之積層體進行捲出,於照度230mW/cm2、光量170mJ/cm2之條件照射紫外線,藉此使該保護膜形成用膜硬化而形成保護膜。 The laminate obtained above was rolled out, and ultraviolet rays were irradiated under conditions of an illuminance of 230 mW/cm 2 and a light quantity of 170 mJ/cm 2 to harden the protective film forming film to form a protective film.

繼而,將該附有剝離膜之保護膜切割成寬15mm、長140mm之大小,自兩面移除剝離膜而作為試片。依據JIS K7161:1994及JIS K7127:1999,自該試片的兩端部至長度方向中的20mm之部分貼附試驗用墊板(glue board)(標籤),使用萬能試驗機(島津製作所製造之「Autograph AG-IS 500N」),將該部分以夾具間距離成為100mm之方式利用夾具進行固定,以拉伸速度200mm/min進行拉伸試驗。 Then, the protective film with the release film was cut into a size of 15 mm in width and 140 mm in length, and the release film was removed from both sides and used as a test piece. According to JIS K7161: 1994 and JIS K7127: 1999, the test glue board (label) is attached from the two ends of the test piece to the 20mm part in the length direction, and the universal testing machine (manufactured by Shimadzu Corporation) "Autograph AG-IS 500N"), the part is fixed with clamps so that the distance between the clamps becomes 100mm, and the tensile test is performed at a tensile speed of 200mm/min.

另外,製作此時之應力應變曲線,由試驗初期之應力應變曲線的斜率算出楊氏模數,進而由斷裂時之試片的伸長量求出斷裂伸長率。將結果示於表1。 In addition, the stress-strain curve at this time was prepared, the Young's modulus was calculated from the slope of the stress-strain curve at the initial stage of the test, and the elongation at break was calculated from the elongation of the test piece at the time of breaking. The results are shown in Table 1.

(保護膜的可靠性之評價) (Evaluation of the reliability of the protective film)

對上述所得之積層體進行捲出,自保護膜形成用膜的單面移除前述剝離膜之其中一個,使用貼膜機(tape mounter)(Lintec Corporation製造之「Adwill RAD-3600F/12),將單面具備前述剝離膜之保護膜形成用膜的露出面一面加熱至70℃一面貼附於研磨成#2000之矽晶圓(直徑200mm,厚度280μm)的研磨面。繼而,於照度230mW/cm2、光量170mJ/cm2之條件照射紫外線,藉此使保護膜形成用膜硬化,而於矽晶圓的研磨面形成保護膜。 The laminate obtained above was rolled out, one of the aforementioned release films was removed from one side of the protective film forming film, and a tape mounter ("Adwill RAD-3600F/12 manufactured by Lintec Corporation) was used to remove The exposed surface of the protective film formation film with the release film on one side was heated to 70°C and attached to the polished surface of a #2000 silicon wafer (diameter 200mm, thickness 280μm) polished. Then, the illuminance was 230mW/cm 2. Irradiate ultraviolet rays under the condition of a light quantity of 170mJ/cm 2 to harden the protective film forming film and form a protective film on the polished surface of the silicon wafer.

繼而,自前述保護膜去除另一個剝離膜後,貼附切割片(Lintec Corporation製造之「Adwill G-562」),使用切割裝置(Disco公司製造之「DFD651」),將上述形成有保護膜之矽晶圓切割成3mm×3mm之大小,而獲得附有保護膜之半導體晶片。 Then, after removing another release film from the aforementioned protective film, a dicing sheet ("Adwill G-562" manufactured by Lintec Corporation) was attached, and a cutting device ("DFD651" manufactured by Disco Corporation) was used to remove the above-mentioned protective film. The silicon wafer is cut into a size of 3mm×3mm to obtain a semiconductor chip with a protective film.

繼而,將上述所得之附有保護膜之半導體晶片置於模仿安裝半導體晶片時之製程之以下所示之先決條件(precondition)下。亦即,將附有保護膜之半導體晶片於125℃烘烤20小時後,於85℃、相對濕度85%之條件吸濕168小時,繼而使剛自該吸濕環境取出後之附有保護膜之半導體晶片於預熱160℃、峰值溫度260℃之條件之IR(infrared;紅外線)回焊爐中通過3次。另外,將進行過以上操作之25個附有保護膜之半導體晶片放入冷熱衝擊裝置(ESPEC公司製造之「TSE-11-A」)中,重複1000次於-65℃保持10分鐘後,於150℃保持10分鐘之冷熱循環。 Then, the semiconductor chip with the protective film obtained above is placed under the preconditions shown below that mimic the process of mounting the semiconductor chip. That is, after baking the semiconductor wafer with the protective film at 125°C for 20 hours, it absorbs moisture for 168 hours under the conditions of 85°C and 85% relative humidity, and then makes the protective film attached just after being taken out from the hygroscopic environment The semiconductor wafers are passed 3 times in an IR (infrared) reflow oven with a preheating of 160°C and a peak temperature of 260°C. In addition, the 25 semiconductor wafers with protective films that have undergone the above operations are placed in a thermal shock device ("TSE-11-A" manufactured by ESPEC Corporation), repeated 1,000 times and kept at -65°C for 10 minutes. Keep at 150°C for 10 minutes of heat and cold cycle.

繼而,將附有保護膜之半導體晶片全部自冷熱衝擊裝置中取出,使用掃描型超音波探傷裝置(Sonoscan公司製造之「D9600TMCSAM」),觀察附有保護膜之半導體晶片的剖面,藉此確認半導體晶片與保護膜之接合部有無隆起、剝離,半導體晶片中有無龜裂。另外,數出產生上述隆起、剝離及龜裂之至少一者之附有保護膜之半導體晶片的個數,將其個數(NG數)為2個以下之情形判定為可靠性合格(A),將為3個以上之情形判定為可靠性不合格(B)。將結果示於表1。 Then, the semiconductor chip with the protective film was taken out from the thermal shock device, and the scanning ultrasonic flaw detection device ("D9600 TM CSAM" manufactured by Sonoscan) was used to observe the cross-section of the semiconductor chip with the protective film. Check whether the junction between the semiconductor wafer and the protective film is raised or peeled, and whether there are cracks in the semiconductor wafer. In addition, count the number of semiconductor wafers with a protective film that produced at least one of the above-mentioned bumps, peeling, and cracks, and judge the reliability as acceptable when the number (NG number) is 2 or less (A) , It will be judged as reliability failure (B) for 3 or more cases. The results are shown in Table 1.

<保護膜形成用膜之製造及評價> <Production and Evaluation of Film for Forming Protective Film>

[實施例2至實施例4、比較例1至比較例6] [Example 2 to Example 4, Comparative Example 1 to Comparative Example 6]

將製造保護膜形成用組成物時之調配成分的種類及其調配量設為如表1所示,除此以外,利用與實施例1相同之方法製造及評價保護膜形成用膜。 Except that the types and the amounts of the components to be blended when manufacturing the protective film forming composition were as shown in Table 1, the same method as in Example 1 was used to manufacture and evaluate the protective film forming film.

將結果示於表1。 The results are shown in Table 1.

Figure 105134758-A0202-12-0056-1
Figure 105134758-A0202-12-0056-1
Figure 105134758-A0202-12-0057-2
Figure 105134758-A0202-12-0057-2

※1:切割時產生崩裂,未能獲得附有保護膜之半導體晶片。 ※1: Cracks occurred during cutting, and the semiconductor chip with protective film could not be obtained.

由上述結果可明確得知,由實施例1實施例4之保護膜形成用膜形成之保護膜的楊氏模數及斷裂伸長率高,具有充分的保護作用,進而可靠性亦高。 From the above results, it is clear that the protective film formed from the protective film forming film of Example 1 and Example 4 has high Young's modulus and elongation at break, has sufficient protective effect, and has high reliability.

與此相對,由比較例1比較例2、比較例4及比較例6之保護膜形成用膜形成之保護膜的斷裂伸長率低,保護作用不充分,可靠性亦低。推測其原因分別為:比較例1至比較例2中使用了能量線硬化性化合物(B2)-1,比較例4中能量線硬化性化合物(B1)-1的使用量過多。比較例6中,有該兩種原因。 In contrast, the protective film formed from the protective film forming film of Comparative Example 1, Comparative Example 2, Comparative Example 4, and Comparative Example 6 had low elongation at break, insufficient protective effect, and low reliability. The reasons are presumed to be that the energy ray curable compound (B2)-1 was used in Comparative Examples 1 to 2, and the energy ray curable compound (B1)-1 was used in an excessive amount in Comparative Example 4. In Comparative Example 6, there are these two reasons.

另外,由比較例3及比較例5之保護膜形成用膜形成之保護膜的楊氏模數低,切割時產生崩裂,未能獲得附有保護膜之半導體晶片,無法評價保護膜的可靠性。推測其原因為:比較例3中能量線硬化性化合物(B1)-1的使用量過少,比較例5中能量線硬化性化合物(B2)-1的使用量過少。 In addition, the protective film formed from the protective film forming film of Comparative Example 3 and Comparative Example 5 had a low Young's modulus and cracked during dicing. The semiconductor wafer with the protective film could not be obtained, and the reliability of the protective film could not be evaluated. . It is presumed that the reason is that the usage amount of the energy ray curable compound (B1)-1 in Comparative Example 3 is too small, and the usage amount of the energy ray curable compound (B2)-1 in Comparative Example 5 is too small.

(產業可利用性) (Industrial availability)

本發明可用於製造背面受保護膜保護之半導體晶片 等,故於產業上極其有用。 The invention can be used to manufacture semiconductor chips whose backside is protected by a protective film And so on, so it is extremely useful in industry.

1A‧‧‧保護膜形成用複合片 1A‧‧‧Composite sheet for forming protective film

10‧‧‧支持片 10‧‧‧Support film

10a‧‧‧(支持片的)表面 10a‧‧‧(supporting film) surface

11‧‧‧基材 11‧‧‧Substrate

11a‧‧‧(基材的)表面 11a‧‧‧(of the substrate) surface

12‧‧‧黏著劑層 12‧‧‧Adhesive layer

12a‧‧‧(黏著劑層的)表面 12a‧‧‧(adhesive layer) surface

13‧‧‧保護膜形成用膜 13‧‧‧Film for forming protective film

13a‧‧‧(保護膜形成用膜的)表面 13a‧‧‧(The surface of the protective film forming film)

15‧‧‧剝離膜 15‧‧‧Peeling film

16‧‧‧治具用接著劑層 16‧‧‧Adhesive layer for fixture

16a‧‧‧(治具用接著劑層的)表面 16a‧‧‧(adhesive layer for jig) surface

Claims (6)

一種保護膜形成用膜,用以於半導體晶圓或半導體晶片的背面形成保護膜,含有選自丙烯酸系樹脂、聚酯、聚胺甲酸乙酯、丙烯酸胺甲酸乙酯樹脂、聚矽氧樹脂、橡膠系聚合物、苯氧基樹脂之聚合物成分(A)以及能量線硬化性化合物(B),其中前述保護膜形成用膜不含聚醯亞胺,且具有以下特性:藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物時,前述硬化物的楊氏模數為1080MPa以上至10000MPa以下,且斷裂伸長率為8%以上。 A film for forming a protective film, used to form a protective film on the back of a semiconductor wafer or a semiconductor wafer, containing selected from acrylic resin, polyester, polyurethane, urethane acrylate resin, silicone resin, The polymer component (A) of rubber-based polymer, phenoxy resin, and energy-ray curable compound (B), wherein the film for forming a protective film does not contain polyimide, and has the following characteristics: When the protective film forming film is cured to form a cured product, the Young's modulus of the cured product is from 1080 MPa to 10,000 MPa, and the elongation at break is 8% or more. 一種保護膜形成用膜,用以於半導體晶圓或半導體晶片的背面形成保護膜,含有選自丙烯酸系樹脂、聚酯、聚胺甲酸乙酯、丙烯酸胺甲酸乙酯樹脂、聚矽氧樹脂、橡膠系聚合物、苯氧基樹脂之聚合物成分(A)以及能量線硬化性化合物(B),其中前述保護膜形成用膜不含聚醯亞胺,且具有以下特性:藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物時,前述硬化物的楊氏模數為500MPa以上,且斷裂伸長率為8%以上至56.0%以下。 A film for forming a protective film, used to form a protective film on the back of a semiconductor wafer or a semiconductor wafer, containing selected from acrylic resin, polyester, polyurethane, urethane acrylate resin, silicone resin, The polymer component (A) of rubber-based polymer, phenoxy resin, and energy-ray curable compound (B), wherein the film for forming a protective film does not contain polyimide, and has the following characteristics: When the protective film forming film is cured to form a cured product, the Young's modulus of the cured product is 500 MPa or more, and the elongation at break is 8% or more to 56.0% or less. 一種保護膜形成用膜,用以於半導體晶圓或半導體晶片的背面形成保護膜,含有選自丙烯酸系樹脂、聚酯、聚胺甲酸乙酯、丙烯酸胺甲酸乙酯樹脂、聚矽氧樹脂、橡膠系聚合物、苯氧基樹脂之聚合物成分(A)、能量線硬化性化合物(B)以及填充材料(D);前述填充材料(D) 的含量相對於前述保護膜形成用膜的總質量為5質量%至80質量%;其中前述保護膜形成用膜不含聚醯亞胺,且具有以下特性:藉由照射能量線,使前述保護膜形成用膜硬化而形成硬化物時,前述硬化物的楊氏模數為500MPa以上,且斷裂伸長率為8%以上。 A film for forming a protective film, used to form a protective film on the back of a semiconductor wafer or a semiconductor wafer, containing selected from acrylic resin, polyester, polyurethane, urethane acrylate resin, silicone resin, Rubber-based polymer, polymer component (A) of phenoxy resin, energy ray curable compound (B) and filler (D); the aforementioned filler (D) Relative to the total mass of the protective film forming film is 5 mass% to 80 mass%; wherein the protective film forming film does not contain polyimide, and has the following characteristics: by irradiating energy rays, the aforementioned protection When the film for film formation is cured to form a cured product, the Young's modulus of the cured product is 500 MPa or more, and the elongation at break is 8% or more. 如請求項1至3中任一項所記載之保護膜形成用膜,其中前述能量線硬化性化合物(B)的含量相對於前述保護膜形成用膜的總質量為5質量%至25質量%。 The film for forming a protective film as described in any one of claims 1 to 3, wherein the content of the energy ray curable compound (B) is 5 to 25% by mass relative to the total mass of the film for forming the protective film . 如請求項1至3中任一項所記載之保護膜形成用膜,其中前述保護膜形成用膜中,一分子中具有2個至4個能量線聚合性基之能量線硬化性化合物(B1)的含量相對於前述能量線硬化性化合物(B)的總質量為90質量%以上。 The film for forming a protective film according to any one of claims 1 to 3, wherein in the film for forming a protective film, an energy ray curable compound (B1) having 2 to 4 energy ray polymerizable groups in one molecule The content of) is 90% by mass or more with respect to the total mass of the energy ray curable compound (B). 一種保護膜形成用複合片,於支持片的一方的表面上具備如請求項1至5中任一項所記載之保護膜形成用膜。 A composite sheet for forming a protective film is provided with the film for forming a protective film as described in any one of claims 1 to 5 on one surface of a support sheet.
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