TWI715302B - Bending damage detection apparatus and method for flexible display panel - Google Patents
Bending damage detection apparatus and method for flexible display panel Download PDFInfo
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本發明是有關於一種顯示裝置,且特別是有關於一種可撓顯示面板的彎折損壞偵測裝置與方法。The present invention relates to a display device, and more particularly to a bending damage detection device and method for a flexible display panel.
越來越多顯示裝置採用可撓顯示面板。舉例來說,一些手機的顯示面板可以被彎折或摺疊。一般而言,可撓顯示面板在手機的彎折軸處具有彎折區。無論如何,頻繁地彎折可撓顯示面板一段時間後將會造成可撓顯示面板的彎折區發生損壞。More and more display devices use flexible display panels. For example, the display panels of some mobile phones can be bent or folded. Generally speaking, the flexible display panel has a bending area at the bending axis of the mobile phone. In any case, frequently bending the flexible display panel for a period of time will cause damage to the bending area of the flexible display panel.
本發明提供一種彎折損壞偵測裝置與方法,以偵測可撓顯示面板的彎折損壞狀況。The invention provides a bending damage detection device and method to detect bending damage of a flexible display panel.
本發明的彎折損壞偵測裝置包括彎折感測器、第一比較電路以及處理電路。第一比較電路被配置為偵測在可撓顯示面板的彎折區中的目標電性元件的目標電性特徵,以及偵測在可撓顯示面板中且在彎折區外的第一參考電性元件的第一參考電性特徵。第一比較電路在第一偵測期間比較目標電性特徵與第一參考電性特徵,以獲得第一比較結果,其中該第一偵測期間包括可撓顯示面板的彎折區被彎折的初期或是可撓顯示面板的彎折區被攤平的初期。處理電路耦接至第一比較電路,用以接收該第一比較結果,並依據該第一比較結果判斷可撓顯示面板的彎折損壞狀況。彎折感測器被配置在可撓顯示面板的彎折區中,用以偵測在彎折區中的可撓顯示面板有無被彎折,以獲得感測結果。處理電路耦接至彎折感測器,以接收感測結果。當感測結果表示「在彎折區中的可撓顯示面板被彎折」時,處理電路觸發第一比較電路以比較目標電性特徵與第一參考電性特徵,以獲得第一比較結果。The bending damage detection device of the present invention includes a bending sensor, a first comparison circuit and a processing circuit. The first comparison circuit is configured to detect the target electrical characteristics of the target electrical element in the bending area of the flexible display panel, and to detect the first reference electrical feature in the flexible display panel and outside the bending area The first reference electrical characteristic of the sexual element. The first comparison circuit compares the target electrical characteristic with the first reference electrical characteristic during the first detection period to obtain the first comparison result, wherein the first detection period includes the bending area of the flexible display panel being bent The initial stage or the initial stage when the bending area of the flexible display panel is flattened. The processing circuit is coupled to the first comparison circuit for receiving the first comparison result, and judging the bending damage condition of the flexible display panel according to the first comparison result. The bending sensor is configured in the bending area of the flexible display panel to detect whether the flexible display panel in the bending area is bent or not to obtain a sensing result. The processing circuit is coupled to the bending sensor to receive the sensing result. When the sensing result indicates "the flexible display panel in the bending area is bent", the processing circuit triggers the first comparison circuit to compare the target electrical characteristic with the first reference electrical characteristic to obtain the first comparison result.
本發明的可撓顯示面板的彎折損壞偵測方法包括:由第一比較電路偵測在可撓顯示面板的彎折區中的目標電性元件的目標電性特徵;由第一比較電路偵測在可撓顯示面板中且在彎折區外的第一參考電性元件的第一參考電性特徵;由彎折感測器偵測在彎折區中的可撓顯示面板有無被彎折,以獲得感測結果;當該感測結果表示在彎折區中的可撓顯示面板被彎折時,由處理電路觸發第一比較電路去比較目標電性特徵與第一參考電性特徵;由第一比較電路在第一偵測期間比較目標電性特徵與第一參考電性特徵,以獲得第一比較結果,其中該第一偵測期間包括可撓顯示面板的彎折區被彎折的初期或是可撓顯示面板的彎折區被攤平的初期;以及由處理電路依據該第一比較結果判斷可撓顯示面板的彎折損壞狀況。The bending damage detection method of the flexible display panel of the present invention includes: detecting the target electrical characteristic of the target electrical component in the bending area of the flexible display panel by a first comparison circuit; and detecting by the first comparison circuit Measure the first reference electrical characteristics of the first reference electrical component in the flexible display panel and outside the bending area; the bending sensor detects whether the flexible display panel in the bending area is bent , To obtain a sensing result; when the sensing result indicates that the flexible display panel in the bending area is bent, the processing circuit triggers the first comparison circuit to compare the target electrical characteristic with the first reference electrical characteristic; The first comparison circuit compares the target electrical characteristic with the first reference electrical characteristic during the first detection period to obtain the first comparison result, wherein the bending area including the flexible display panel is bent during the first detection period Or the initial stage when the bending area of the flexible display panel is flattened; and the processing circuit determines the bending damage condition of the flexible display panel according to the first comparison result.
基於上述,可撓顯示面板的彎折區具有目標電性元件,而可撓顯示面板的非彎折區具有第一參考電性元件。第一比較電路在第一偵測期間可以比較目標電性元件與第一參考電性元件的電性特徵,以獲得第一比較結果。在一些實施例中,處理電路可以依據第一比較結果判斷可撓顯示面板的彎折損壞狀況。Based on the above, the bending area of the flexible display panel has the target electrical element, and the non-bending area of the flexible display panel has the first reference electrical element. The first comparison circuit can compare the electrical characteristics of the target electrical component and the first reference electrical component during the first detection period to obtain the first comparison result. In some embodiments, the processing circuit can determine the bending damage condition of the flexible display panel according to the first comparison result.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
在本案說明書全文(包括申請專利範圍)中所使用的「耦接(或連接)」一詞可指任何直接或間接的連接手段。舉例而言,若文中描述第一裝置耦接(或連接)於第二裝置,則應該被解釋成該第一裝置可以直接連接於該第二裝置,或者該第一裝置可以透過其他裝置或某種連接手段而間接地連接至該第二裝置。本案說明書全文(包括申請專利範圍)中提及的「第一」、「第二」等用語是用以命名元件(element)的名稱,或區別不同實施例或範圍,而並非用來限制元件數量的上限或下限,亦非用來限制元件的次序。另外,凡可能之處,在圖式及實施方式中使用相同標號的元件/構件/步驟代表相同或類似部分。不同實施例中使用相同標號或使用相同用語的元件/構件/步驟可以相互參照相關說明。The term "coupling (or connection)" used in the full description of the case (including the scope of the patent application) can refer to any direct or indirect connection means. For example, if the text describes that the first device is coupled (or connected) to the second device, it should be interpreted as that the first device can be directly connected to the second device, or the first device can be connected through other devices or some This kind of connection means is indirectly connected to the second device. The terms "first" and "second" mentioned in the full text of the description of this case (including the scope of the patent application) are used to name the element (element), or to distinguish different embodiments or ranges, and are not used to limit the number of elements The upper or lower limit is not used to limit the order of components. In addition, wherever possible, elements/components/steps with the same reference numbers in the drawings and embodiments represent the same or similar parts. Elements/components/steps using the same reference numerals or using the same terms in different embodiments may refer to related descriptions.
圖1是依照本發明的一實施例的一種彎折損壞偵測裝置100的電路方塊(circuit block)示意圖。圖1所示可撓顯示面板10具有彎折區11。目標電性元件EEt被配置在可撓顯示面板10的彎折區11中。參考電性元件EE1被配置在可撓顯示面板10中且在彎折區11外。藉由比較目標電性元件EEt與參考電性元件EE1的電性特徵的差異,彎折損壞偵測裝置100可以偵測/判斷可撓顯示面板10的彎折損壞狀況。FIG. 1 is a schematic diagram of a circuit block of a bending
在圖1所示實施例中,彎折損壞偵測裝置100包括比較電路110以及處理電路120。比較電路110可以偵測目標電性元件EEt的電性特徵(在此稱為目標電性特徵tar11)。比較電路110還可以偵測參考電性元件EE1的電性特徵(在此稱為參考電性特徵ref11)。比較電路110可以在偵測期間比較目標電性特徵tar11與參考電性特徵ref11,以獲得比較結果。所述偵測期間可以依照設計需求來設定。舉例來說,在一些實施例中,所述偵測期間可以是可撓顯示面板10的彎折區11被彎折的初期(或是末期)。在另一些實施例中,所述偵測期間可以是可撓顯示面板10的彎折區11被攤平的初期(或是末期)。在其他實施例中,當可撓顯示面板10的彎折區11被攤平時,以及當可撓顯示面板10的彎折區11被彎折時,彎折損壞偵測裝置100都會進入所述偵測期間。In the embodiment shown in FIG. 1, the bending
圖2是依照本發明的一實施例的一種彎折損壞偵測方法的流程示意圖。請參照圖1與圖2。在所述偵測期間中,比較電路110可以偵測在可撓顯示面板10的彎折區11中的目標電性元件EEt的目標電性特徵tar11,以及偵測在可撓顯示面板10中且在彎折區11外的參考電性元件EE1的參考電性特徵ref11(步驟S210)。在所述偵測期間中,比較電路110可以比較所述目標電性特徵tar11與所述參考電性特徵ref11,以獲得比較結果(步驟S220)。處理電路120耦接至比較電路110,以接收所述比較結果。處理電路120可以依據所述比較結果判斷可撓顯示面板10的彎折損壞狀況(步驟S230)。FIG. 2 is a schematic flowchart of a bending damage detection method according to an embodiment of the invention. Please refer to Figure 1 and Figure 2. During the detection period, the
舉例來說,目標電性元件EEt可以是薄膜電晶體(thin film transistor, TFT),而參考電性元件EE1可以是另一個薄膜電晶體。目標電性特徵tar11可以是目標電性元件EEt的導通電阻,而參考電性特徵ref11可以是參考電性元件EE1的導通電阻。在目標電性元件EEt是良好的情況下,目標電性元件EEt的導通電阻與參考電性元件EE1的導通電阻的差異(比較結果)是在設計規範內。頻繁地彎折可撓顯示面板10一段時間後,在可撓顯示面板10的彎折區11中的像素電路(未繪示)可能發生損壞,目標電性元件EEt同樣可能發生損壞。For example, the target electrical element EEt may be a thin film transistor (TFT), and the reference electrical element EE1 may be another thin film transistor. The target electrical characteristic tar11 may be the on-resistance of the target electrical element EEt, and the reference electrical characteristic ref11 may be the on-resistance of the reference electrical element EE1. When the target electrical component EEt is good, the difference (comparison result) between the on-resistance of the target electrical component EEt and the on-resistance of the reference electrical component EE1 is within the design specification. After the
圖3是依照本發明的一實施例說明圖1所示目標電性特徵tar11與參考電性特徵ref11的曲線示意圖。圖3所示橫軸表示時間,而縱軸表示電性特徵的準位。在圖3所示實施例中,目標電性特徵tar11可以是被導通(turn on)的目標電性元件EEt的輸出電壓,而參考電性特徵ref11可以是被導通的參考電性元件EE1的輸出電壓。在初期(亦即在目標電性元件EEt是良好的情況下),目標電性元件EEt的導通電阻(目標電性特徵tar11)與參考電性元件EE1的導通電阻(參考電性特徵ref11)的差異(比較結果)是在設計規範內。隨著彎折區11的彎折次數的增加,目標電性元件EEt的彎折損壞狀況會越來越惡化。一旦目標電性元件EEt的導通電阻與參考電性元件EE1的導通電阻的差異超出設計規範時,處理電路120可以判斷可撓顯示面板10的彎折損壞狀況為「已損壞」。3 is a schematic diagram illustrating the curves of the target electrical characteristic tar11 and the reference electrical characteristic ref11 shown in FIG. 1 according to an embodiment of the present invention. The horizontal axis shown in FIG. 3 represents time, and the vertical axis represents the level of electrical characteristics. In the embodiment shown in FIG. 3, the target electrical characteristic tar11 may be the output voltage of the target electrical element EEt that is turned on, and the reference electrical characteristic ref11 may be the output of the reference electrical element EE1 that is turned on. Voltage. In the initial stage (that is, when the target electrical component EEt is good), the on-resistance of the target electrical component EEt (target electrical characteristic tar11) and the on-resistance of the reference electrical component EE1 (reference electrical characteristic ref11) The difference (comparison result) is within the design specification. As the number of bending times of the
因此,處理電路120可以提供預警機制。在可撓顯示面板10尚未損壞前,處理電路120可以提供預警訊息給使用者。在另一應用例中,處理電路120可以提供訊息給面板設計人員參考,以預先檢查與維修,或是作為改進設計的依據。Therefore, the
圖4是依照本發明的另一實施例的一種彎折損壞偵測裝置400的電路方塊示意圖。圖4所示可撓顯示面板20具有彎折區21。目標電性元件EEt被配置在可撓顯示面板20的彎折區21中。參考電性元件EE1與參考電性元件EE2被配置在可撓顯示面板20中且在彎折區21外。圖4所示可撓顯示面板20、彎折區21、參考電性元件EE1與目標電性元件EEt可以參照圖1所示可撓顯示面板10、彎折區11、參考電性元件EE1與目標電性元件EEt的相關說明。藉由比較目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的電性特徵的差異,彎折損壞偵測裝置400可以偵測/判斷可撓顯示面板20的彎折損壞狀況。4 is a circuit block diagram of a bending
在圖4所示實施例中,彎折損壞偵測裝置400包括比較電路410以及處理電路420。圖4所示比較電路410以及處理電路420可以參照圖1所示比較電路110以及處理電路120的相關說明。比較電路410可以偵測目標電性元件EEt的電性特徵(在此稱為目標電性特徵tar41),偵測參考電性元件EE1的電性特徵(在此稱為參考電性特徵ref41),以及偵測參考電性元件EE2的電性特徵(在此稱為參考電性特徵ref42)。In the embodiment shown in FIG. 4, the bending
舉例來說,比較電路410可以在第一偵測期間比較目標電性特徵tar41與參考電性特徵ref41以獲得第一比較結果,以及在第二偵測期間比較目標電性特徵tar41與參考電性特徵ref42以獲得第二比較結果。所述第一偵測期間與所述第二偵測期間可以依照設計需求來設定。舉例來說,在一些實施例中,所述第一偵測期間可以是可撓顯示面板20的彎折區21被彎折的初期(或是末期),以及所述第二偵測期間可以是可撓顯示面板20的彎折區21被攤平的初期(或是末期)。在另一些實施例中,所述第一偵測期間可以是可撓顯示面板20的彎折區21被攤平的初期,以及所述第二偵測期間可以是可撓顯示面板20的彎折區21被彎折的初期。For example, the
在圖4所示實施例中,彎折損壞偵測裝置400更包括彎折感測器BS。彎折感測器BS被配置在可撓顯示面板20的彎折區21中。彎折感測器BS可以偵測在彎折區21中的可撓顯示面板20有無被彎折,以獲得感測結果。處理電路420耦接至彎折感測器BS,以接收感測結果。本實施例並不限制彎折感測器BS的實施方式。舉例來說,在一些實施例中,彎折感測器BS可以具有壓電材料。當在彎折區21中的可撓顯示面板20被彎折時,彎折感測器BS的壓電材料被壓縮(或被拉伸)。壓電材料的形變可以反映在輸出電壓(感測結果)。In the embodiment shown in FIG. 4, the bending
圖5是依照本發明的另一實施例的一種彎折損壞偵測方法的流程示意圖。請參照圖4與圖5。在所述第一偵測期間中,比較電路410可以偵測在可撓顯示面板20的彎折區21中的目標電性元件EEt的目標電性特徵tar41,以及偵測在可撓顯示面板20中且在彎折區21外的參考電性元件EE1的參考電性特徵ref41(步驟S510)。在所述第一偵測期間中,比較電路410可以比較所述目標電性特徵tar41與所述參考電性特徵ref41,以獲得第一比較結果(步驟S520)。舉例來說,當彎折感測器BS的感測結果表示在彎折區21中的可撓顯示面板20被彎折時,處理電路420可以觸發比較電路410去比較目標電性特徵tar41與參考電性特徵ref41以獲得所述第一比較結果。FIG. 5 is a schematic flowchart of a bending damage detection method according to another embodiment of the present invention. Please refer to Figure 4 and Figure 5. In the first detection period, the
在所述第二偵測期間中,比較電路410可以偵測在可撓顯示面板20的彎折區21中的目標電性元件EEt的目標電性特徵tar41,以及偵測在可撓顯示面板20中且在彎折區21外的參考電性元件EE2的參考電性特徵ref42(步驟S530)。在所述第二偵測期間中,比較電路410可以比較所述目標電性特徵tar41與所述參考電性特徵ref42,以獲得第二比較結果(步驟S540)。舉例來說,當彎折感測器BS的感測結果表示在彎折區21中的可撓顯示面板20被攤平時,處理電路420可以觸發比較電路410去比較目標電性特徵tar41與參考電性特徵ref42以獲得所述第二比較結果。In the second detection period, the
須注意的是,雖然圖5所示實施例是先進行步驟S510與步驟S520,然後再進行步驟S530與步驟S540,但是本發明的實施方式不應受限於此。舉例來說,在其他實施例中,步驟S530與步驟S540可以先被執行,然後再執行步驟S510與步驟S520。處理電路420耦接至比較電路110,以接收所述第一比較結果與所述第二比較結果。處理電路120可以依據所述第一比較結果與所述第二比較結果來判斷可撓顯示面板20的彎折損壞狀況(步驟S550)。It should be noted that although the embodiment shown in FIG. 5 first performs step S510 and step S520, and then performs step S530 and step S540, the implementation of the present invention should not be limited to this. For example, in other embodiments, step S530 and step S540 may be executed first, and then step S510 and step S520 are executed. The
舉例來說,參考電性元件EE1可以是第一電晶體(例如薄膜電晶體),參考電性元件EE2可以是第二電晶體(例如薄膜電晶體),而目標電性元件EEt可以是第三電晶體(例如薄膜電晶體)。目標電性特徵tar41可以是目標電性元件EEt的導通電阻,參考電性特徵ref41可以是參考電性元件EE1的導通電阻,而參考電性特徵ref42可以是參考電性元件EE1的導通電阻。第三電晶體(目標電性元件EEt)的電性規格相同於可撓顯示面板20的像素電路(未繪示)的電晶體的電性規格。第二電晶體(參考電性元件EE2)的通道寬長比(W/L)小於所述第三電晶體的通道寬長比,以及第一電晶體(參考電性元件EE1)的通道寬長比小於所述第二電晶體的通道寬長比。For example, the reference electrical element EE1 may be a first transistor (for example, a thin film transistor), the reference electrical element EE2 may be a second transistor (for example, a thin film transistor), and the target electrical element EEt may be a third transistor. Transistors (such as thin film transistors). The target electrical characteristic tar41 may be the on-resistance of the target electrical element EEt, the reference electrical characteristic ref41 may be the on-resistance of the reference electrical element EE1, and the reference electrical characteristic ref42 may be the on-resistance of the reference electrical element EE1. The electrical specifications of the third transistor (the target electrical element EEt) are the same as the electrical specifications of the transistor of the pixel circuit (not shown) of the
在目標電性元件EEt是良好的情況下,目標電性元件EEt的導通電阻與參考電性元件EE1的導通電阻的差異(第一比較結果)是在設計規範內,並且目標電性元件EEt的導通電阻與參考電性元件EE2的導通電阻的差異(第二比較結果)亦是在設計規範內。頻繁地彎折可撓顯示面板20一段時間後,在可撓顯示面板20的彎折區21中的像素電路(未繪示)可能發生損壞,而目標電性元件EEt同樣可能發生損壞。When the target electrical element EEt is good, the difference between the on-resistance of the target electrical element EEt and the on-resistance of the reference electrical element EE1 (the first comparison result) is within the design specification, and the target electrical element EEt The difference between the on-resistance and the on-resistance of the reference electrical element EE2 (the second comparison result) is also within the design specification. After the
在圖4所示實施例中,比較電路410包括比較器411以及比較器412。比較器411的第一輸入端耦接至目標電性元件EEt,以接收目標電性特徵tar41。比較器411的第二輸入端耦接至參考電性元件EE1,以接收參考電性特徵ref41。在圖4所示實施例中,目標電性特徵tar41可以是被導通的目標電性元件EEt的輸出電壓,而參考電性特徵ref41可以是被導通的參考電性元件EE1的輸出電壓。比較器411的輸出端耦接至處理電路420,以提供所述第一比較結果。比較器412的第一輸入端耦接至目標電性元件EEt,以接收目標電性特徵tar41。比較器412的第二輸入端耦接至參考電性元件EE2,以接收參考電性特徵ref42。在圖4所示實施例中,目標電性特徵tar41可以是被導通的目標電性元件EEt的輸出電壓,而參考電性特徵ref42可以是被導通的參考電性元件EE2的輸出電壓。比較器412的輸出端耦接至處理電路420,以提供所述第二比較結果。In the embodiment shown in FIG. 4, the
圖6是依照本發明的一實施例說明圖4所示目標電性特徵tar41、參考電性特徵ref41與參考電性特徵ref42的曲線示意圖。圖6所示橫軸表示時間,而縱軸表示電性特徵的準位(例如電壓準位)。隨著彎折區11的彎折次數的增加,目標電性元件EEt的彎折損壞狀況會越來越惡化。6 is a schematic diagram illustrating the curves of the target electrical characteristic tar41, the reference electrical characteristic ref41 and the reference electrical characteristic ref42 shown in FIG. 4 according to an embodiment of the present invention. The horizontal axis shown in FIG. 6 represents time, and the vertical axis represents the level of electrical characteristics (for example, the voltage level). As the number of bending times of the bending
圖7是依照本發明的一實施例說明圖4所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的電路方塊示意圖。圖7所示可撓顯示面板20、彎折區21、參考電性元件EE1、參考電性元件EE2、目標電性元件EEt、彎折感測器BS、比較電路410以及處理電路420可以參照圖1的相關說明,故不再贅述。FIG. 7 is a circuit block diagram illustrating the target electrical component EEt, the reference electrical component EE1 and the reference electrical component EE2 shown in FIG. 4 according to an embodiment of the present invention. The
於圖7所示實施例中,彎折損壞偵測裝置更包括驅動電路430。驅動電路430可以驅動可撓顯示面板20,以顯示影像於顯示區。所述顯示區又稱為活動區(active area)。驅動電路430可以提供參考電壓給第一電晶體(參考電性元件EE1)、第二電晶體(參考電性元件EE2)與第三電晶體(目標電性元件EEt)的第一端(例如汲極)。所述第一電晶體的、所述第二電晶體與所述第三電晶體的控制端(例如閘極)受控於驅動電路430。基於處理電路420的控制,驅動電路430在第一偵測期間(例如可撓顯示面板20的彎折區21被彎折的初期)導通所述第一電晶體與所述第三電晶體,並截止(turn off)所述第二電晶體。此外,基於處理電路420的控制,驅動電路430在第二偵測期間(例如可撓顯示面板20的彎折區21被攤平的初期)導通所述第二電晶體與所述第三電晶體,並截止(turn off)所述第一電晶體。In the embodiment shown in FIG. 7, the bending damage detection device further includes a
所述第一電晶體(參考電性元件EE1)的第二端(例如源極)耦接至比較電路410的比較器411的第二輸入端。所述第二電晶體(參考電性元件EE2)的第二端(例如源極)耦接至比較電路410的比較器412的第二輸入端。所述第三電晶體(目標電性元件EEt)的第二端(例如源極)耦接至比較器411的第一輸入端與比較器412的第一輸入端。第三電晶體(目標電性元件EEt)的電性規格相同於可撓顯示面板20的像素電路(未繪示)的電晶體的電性規格。第二電晶體(參考電性元件EE2)的通道寬長比(W/L)小於所述第三電晶體的通道寬長比,以及第一電晶體(參考電性元件EE1)的通道寬長比小於所述第二電晶體的通道寬長比。所述第一電晶體(參考電性元件EE1)的源極電壓可以參照於圖6所示參考電性特徵ref41的曲線。所述第二電晶體(參考電性元件EE2)的源極電壓可以參照於圖6所示參考電性特徵ref42的曲線。所述第三電晶體(目標電性元件EEt)的源極電壓可以參照於圖6所示目標電性特徵tar41的曲線。The second terminal (for example, the source) of the first transistor (refer to the electrical element EE1) is coupled to the second input terminal of the
比較器411的輸出端耦接至處理電路420,以提供第一比較結果。比較器413的輸出端耦接至處理電路420,以提供第二比較結果。當比較器411的輸出(第一比較結果)表示「在可撓顯示面板20的彎折區21被彎折的初期第三電晶體的源極電壓大於第一電晶體(參考電性元件EE1)的源極電壓」時(亦即在所述第一偵測期間目標電性特徵tar41大於參考電性特徵ref41),並且當比較器412的輸出(第二比較結果)表示「在可撓顯示面板20的彎折區21被攤平的初期第三電晶體的源極電壓大於第二電晶體(參考電性元件EE2)的源極電壓」時(亦即在所述第二偵測期間目標電性特徵tar41大於參考電性特徵ref42),處理電路420可以判斷可撓顯示面板20的像素電路(未繪示)的電晶體的彎折損壞狀況為「良好」。反之,處理電路420可以判斷可撓顯示面板20的像素電路(未繪示)的電晶體的彎折損壞狀況為「非良好」。The output terminal of the
圖8是依照本發明的另一實施例說明圖4所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的電路方塊示意圖。圖8所示可撓顯示面板20、彎折區21、參考電性元件EE1、參考電性元件EE2、目標電性元件EEt、彎折感測器BS、比較電路410以及處理電路420可以參照圖1的相關說明,圖8所示可撓比較電路410、處理電路420與驅動電路430可以參照圖7的相關說明,故不再贅述。FIG. 8 is a circuit block diagram illustrating the target electrical component EEt, the reference electrical component EE1 and the reference electrical component EE2 shown in FIG. 4 according to another embodiment of the present invention. The
於圖8所示實施例中,參考電性元件EE1可以是第一電容,參考電性元件EE2可以是第二電容,而目標電性元件EEt可以是第三電容。第一電容、第二電容與第三電容的第一端耦接至驅動電路430,以接收參考電壓。第一電容、第二電容與第三電容的第二端耦接至比較電路410。可撓顯示面板20的封裝材料可以作為第一電容、第二電容與第三電容的介電質。In the embodiment shown in FIG. 8, the reference electrical element EE1 may be a first capacitor, the reference electrical element EE2 may be a second capacitor, and the target electrical element EEt may be a third capacitor. The first terminals of the first capacitor, the second capacitor and the third capacitor are coupled to the
圖9是依照本發明的一實施例說明圖8所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的布局示意圖。第一電容(參考電性元件EE1)、第二電容(參考電性元件EE2)與第三電容(目標電性元件EEt)可以被配置在可撓顯示面板20的顯示區旁。所述顯示區又稱為活動區(active area)。FIG. 9 is a schematic diagram illustrating the layout of the target electrical element EEt, the reference electrical element EE1 and the reference electrical element EE2 shown in FIG. 8 according to an embodiment of the present invention. The first capacitor (reference electrical element EE1), the second capacitor (reference electrical element EE2), and the third capacitor (target electrical element EEt) may be arranged beside the display area of the
圖10是依照本發明的一實施例說明圖9所示第三電容(目標電性元件EEt)的布局剖面示意圖。請參照圖9與圖10。第三電容(目標電性元件EEt)的兩個電極1001與1002可以配置在可撓顯示面板20的基板上。電極1001電性連接至驅動電路430,而電極1002電性連接至比較電路410的轉換電路413。在封裝製程中,封裝材料除了可以對顯示區的電路進行封裝外,可撓顯示面板20的封裝材料還可以被配置在第三電容(目標電性元件EEt)的兩個電極上(亦在兩個電極之間),如圖10所示。因此,可撓顯示面板20的封裝材料可以作為第三電容(目標電性元件EEt)的介電質。其他電容(參考電性元件EE1與參考電性元件EE2)可以參照第三電容(目標電性元件EEt)的相關說明來類推,故不再贅述。10 is a schematic cross-sectional view illustrating the layout of the third capacitor (target electrical element EEt) shown in FIG. 9 according to an embodiment of the present invention. Please refer to Figure 9 and Figure 10. The two
於圖9所示實施例中,第三電容(目標電性元件EEt)的電容值大於第一電容(參考電性元件EE1)的電容值,而第一電容的電容值大於第二電容(參考電性元件EE2)的電容值。在目標電性元件EEt是良好的情況下,目標電性元件EEt的電容值與參考電性元件EE1的電容值的差異(第一比較結果)是在設計規範內,並且目標電性元件EEt的電容值與參考電性元件EE2的電容值的差異(第二比較結果)亦是在設計規範內。頻繁地彎折可撓顯示面板20一段時間後,在可撓顯示面板20的彎折區21中的封裝材料可能發生損壞,進而改變目標電性元件EEt的電容值。In the embodiment shown in FIG. 9, the capacitance value of the third capacitor (target electrical element EEt) is greater than the capacitance value of the first capacitor (reference electrical element EE1), and the capacitance value of the first capacitor is greater than that of the second capacitor (reference The capacitance value of the electrical component EE2). When the target electrical element EEt is good, the difference between the capacitance value of the target electrical element EEt and the capacitance value of the reference electrical element EE1 (the first comparison result) is within the design specification, and the target electrical element EEt The difference between the capacitance value and the capacitance value of the reference electrical component EE2 (the second comparison result) is also within the design specification. After the
於圖8所示實施例中,比較電路410包括轉換電路413、比較器411以及比較器412。轉換電路413耦接至第一電容(參考電性元件EE1)的第二端、第二電容(參考電性元件EE2)的第二端與第三電容(目標電性元件EEt)的第二端。轉換電路413可以將第一電容的電容值轉換為對應電壓(在此稱為第一電壓),以及將此第一電壓輸出給比較器411。轉換電路413可以將第二電容的電容值轉換為對應電壓(在此稱為第二電壓),以及將此第二電壓輸出給比較器412。轉換電路413可以將第三電容的電容值轉換為對應電壓(在此稱為第三電壓),以及將此第三電壓輸出給比較器411與412。In the embodiment shown in FIG. 8, the
比較器411的第一輸入端耦接至轉換電路413,以接收第一電壓。比較器411的第二輸入端耦接至轉換電路413,以接收第三電壓。比較器411的輸出端耦接至處理電路420,以提供第一比較結果。比較器412的第一輸入端耦接至轉換電路413,以接收第二電壓。比較器412的第二輸入端耦接至轉換電路413,以接收第三電壓。比較器412的輸出端耦接至處理電路420,以提供第二比較結果。The first input terminal of the
請參照圖6與圖8。當比較器411的輸出(第一比較結果)表示「在可撓顯示面板20的彎折區21被彎折的初期第三電壓大於第一電壓」時(亦即在所述第一偵測期間目標電性特徵tar41大於參考電性特徵ref41),並且當比較器412的輸出(第二比較結果)表示「在可撓顯示面板20的彎折區21被攤平的初期第三電壓大於第二電壓」時(亦即在所述第二偵測期間目標電性特徵tar41大於參考電性特徵ref42),處理電路420可以判斷可撓顯示面板20的封裝材料的彎折損壞狀況為「良好」。反之,處理電路420可以判斷可撓顯示面板20的封裝材料的彎折損壞狀況為「非良好」。Please refer to Figure 6 and Figure 8. When the output of the comparator 411 (the first comparison result) indicates "the third voltage is greater than the first voltage at the initial stage when the bending
圖11是依照本發明的又一實施例的一種彎折損壞偵測裝置1100的電路方塊示意圖。圖11所示可撓顯示面板30具有彎折區31。圖11所示彎折損壞偵測裝置1100包括處理電路420、驅動電路430、偵測電路1110與偵測電路1120。圖11所示處理電路420與驅動電路430可以參照圖7與圖8所示處理電路420與驅動電路430的相關說明,故不再贅述。FIG. 11 is a circuit block diagram of a bending
圖11所示偵測電路1110包括圖7所示參考電性元件EE1(第一電晶體)、參考電性元件EE2(第二電晶體)、目標電性元件EEt(第三電晶體)以及比較電路410(比較器411與412)。因此,圖11所示偵測電路1110可以參照圖7的相關說明,故不再贅述。偵測電路1110可以輸出「第一比較結果」與「第二比較結果」給處理電路420。當「第一比較結果」表示「在可撓顯示面板30的彎折區31被彎折的初期第三電晶體(圖7所示目標電性元件EEt)的源極電壓大於第一電晶體(圖7所示參考電性元件EE1)的源極電壓」時(亦即在所述第一偵測期間目標電性特徵tar41大於參考電性特徵ref41),並且當「第二比較結果」表示「在可撓顯示面板30的彎折區31被攤平的初期第三電晶體(圖7所示目標電性元件EEt)的源極電壓大於第二電晶體(圖7所示參考電性元件EE2)的源極電壓」時(亦即在所述第二偵測期間目標電性特徵tar41大於參考電性特徵ref42),處理電路420可以判斷可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為「良好」。反之,處理電路420可以判斷可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為「非良好」。The
圖11所示偵測電路1120包括圖8所示參考電性元件EE1(第一電容)、參考電性元件EE2(第二電容)、目標電性元件EEt(第三電容)以及比較電路410(比較器411、比較器412與轉換電路413)。因此,圖11所示偵測電路1120可以參照圖8的相關說明,故不再贅述。偵測電路1120可以輸出「第三比較結果」與「第四比較結果」給處理電路420。當「第三比較結果」表示「在可撓顯示面板30的彎折區31被彎折的初期第三電容(圖8所示目標電性元件EEt)的電容值大於第一電容(圖8所示參考電性元件EE1)的電容值」時(亦即在所述第一偵測期間目標電性特徵tar41大於參考電性特徵ref41),並且當「第四比較結果」表示「在可撓顯示面板30的彎折區31被攤平的初期第三電容(圖8所示目標電性元件EEt)的電容值大於第二電容(圖8所示參考電性元件EE2)的電容值」時(亦即在所述第二偵測期間目標電性特徵tar41大於參考電性特徵ref42),處理電路420可以判斷可撓顯示面板30的封裝材料的彎折損壞狀況為「良好」。反之,處理電路420可以判斷可撓顯示面板30的封裝材料的彎折損壞狀況為「非良好」。The
處理電路420可以依據偵測電路1110的比較結果與偵測電路1120的比較結果來判斷可撓顯示面板30的彎折損壞狀況。舉例來說,當「可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為良好」並且「可撓顯示面板30的封裝材料的彎折損壞狀況為良好」時,處理電路420可以判斷可撓顯示面板30的彎折損壞狀況為「正常」。當「可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為良好」但是「可撓顯示面板30的封裝材料的彎折損壞狀況為非良好」時,處理電路420可以判斷可撓顯示面板30的彎折損壞狀況為「將要損壞」。當可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為非良好」但是「可撓顯示面板30的封裝材料的彎折損壞狀況為良好」時,處理電路420可以判斷可撓顯示面板30的彎折損壞狀況為「可能損壞」。當「可撓顯示面板30的像素電路(未繪示)的電晶體的彎折損壞狀況為非良好」並且「可撓顯示面板30的封裝材料的彎折損壞狀況為非良好」時,處理電路420可以判斷可撓顯示面板30的彎折損壞狀況為「已經損壞」。The
須注意的是,圖11所示實施例配置一個偵測電路1110與一個偵測電路1120於彎折損壞偵測裝置1100。無論如何,偵測電路1110的數量與/或偵測電路1120的數量可以依照設計需求。亦即,在其他實施例中,多個偵測電路1110與(或)多個偵測電路1120可以被配置於彎折損壞偵測裝置1100。It should be noted that the embodiment shown in FIG. 11 is equipped with a
綜上所述,可撓顯示面板若是異常,通常為可撓顯示面板內的薄膜電晶體(TFT)或是封裝材料受到破壞。因此,上述諸實施例所述彎折損壞偵測裝置可以監測彎折區在多次彎折過後的薄膜電晶體的電性特徵與(或)封裝材料的電性特徵是否改變。配合彎折感測器BS的參側與彎折次數的計數,所述彎折損壞偵測裝置可以得知在第幾次彎折造成封裝以及(或是)薄膜電晶體損壞。因此,所述彎折損壞偵測裝置可以提供預警機制。在可撓顯示面板尚未損壞前,所述彎折損壞偵測裝置可以提供預警訊息給使用者。在另一些應用例中,所述彎折損壞偵測裝置可以可以提供訊息給面板設計人員參考,以預先檢查與維修,或是作為改進設計的依據。To sum up, if the flexible display panel is abnormal, the thin film transistor (TFT) or the packaging material in the flexible display panel is usually damaged. Therefore, the bending damage detection devices described in the foregoing embodiments can monitor whether the electrical characteristics of the thin film transistor and/or the packaging material change after the bending area has been bent multiple times. In conjunction with the count of the reference side of the bending sensor BS and the number of bending times, the bending damage detection device can know how many times the bending caused the package and/or the thin film transistor to be damaged. Therefore, the bending damage detection device can provide an early warning mechanism. Before the flexible display panel is damaged, the bending damage detection device can provide a warning message to the user. In other application examples, the bending damage detection device can provide information for reference by panel designers for pre-checking and repairing, or as a basis for improving design.
依照不同的設計需求,上述比較電路、處理電路以及(或是)驅動電路的方塊的實現方式可以是硬體(hardware)、韌體(firmware)、軟體(software,即程式)或是前述三者中的多者的組合形式。According to different design requirements, the implementation of the blocks of the comparison circuit, processing circuit, and/or drive circuit can be hardware, firmware, software, or the aforementioned three. A combination of more of them.
以硬體形式而言,上述比較電路、處理電路以及(或是)驅動電路的方塊可以實現於積體電路(integrated circuit)上的邏輯電路。上述比較電路、處理電路以及(或是)驅動電路的相關功能可以利用硬體描述語言(hardware description languages,例如Verilog HDL或VHDL)或其他合適的編程語言來實現為硬體。舉例來說,上述比較電路、處理電路以及(或是)驅動電路的相關功能可以被實現於一或多個控制器、微控制器、微處理器、特殊應用積體電路(Application-specific integrated circuit, ASIC)、數位訊號處理器(digital signal processor, DSP)、場可程式邏輯閘陣列(Field Programmable Gate Array, FPGA)及/或其他處理單元中的各種邏輯區塊、模組和電路。In terms of hardware, the blocks of the comparison circuit, the processing circuit, and/or the driving circuit can be implemented in a logic circuit on an integrated circuit. The above-mentioned comparison circuit, processing circuit, and/or related functions of the driving circuit may be implemented as hardware using hardware description languages (for example, Verilog HDL or VHDL) or other suitable programming languages. For example, the related functions of the comparison circuit, the processing circuit, and/or the driving circuit can be implemented in one or more controllers, microcontrollers, microprocessors, and application-specific integrated circuits (Application-specific integrated circuit). , ASIC), digital signal processor (DSP), Field Programmable Gate Array (FPGA) and/or various logic blocks, modules and circuits in other processing units.
以軟體形式及/或韌體形式而言,上述比較電路、處理電路以及(或是)驅動電路的相關功能可以被實現為編程碼(programming codes)。例如,利用一般的編程語言(programming languages,例如C、C++或組合語言)或其他合適的編程語言來實現上述比較電路、處理電路以及(或是)驅動電路。所述編程碼可以被記錄/存放在記錄媒體中,所述記錄媒體中例如包括唯讀記憶體(Read Only Memory,ROM)、存儲裝置及/或隨機存取記憶體(Random Access Memory,RAM)。電腦、中央處理器(Central Processing Unit,CPU)、控制器、微控制器或微處理器可以從所述記錄媒體中讀取並執行所述編程碼,從而達成相關功能。作為所述記錄媒體,可使用「非臨時的電腦可讀取媒體(non-transitory computer readable medium)」,例如可使用帶(tape)、碟(disk)、卡(card)、半導體記憶體、可程式設計的邏輯電路等。而且,所述程式也可經由任意傳輸媒體(通信網路或廣播電波等)而提供給所述電腦(或CPU)。所述通信網路例如是互聯網(Internet)、有線通信(wired communication)、無線通信(wireless communication)或其它通信介質。In terms of software form and/or firmware form, the relevant functions of the above-mentioned comparison circuit, processing circuit, and/or driving circuit can be implemented as programming codes. For example, general programming languages (such as C, C++, or assembly language) or other suitable programming languages are used to implement the aforementioned comparison circuit, processing circuit, and/or driving circuit. The programming code may be recorded/stored in a recording medium, which includes, for example, a read-only memory (Read Only Memory, ROM), a storage device, and/or a random access memory (Random Access Memory, RAM). . A computer, a central processing unit (CPU), a controller, a microcontroller, or a microprocessor can read and execute the programming code from the recording medium, thereby achieving related functions. As the recording medium, a "non-transitory computer readable medium" can be used, for example, tape, disk, card, semiconductor memory, and Programming logic circuits, etc. Furthermore, the program can also be provided to the computer (or CPU) via any transmission medium (communication network, broadcast wave, etc.). The communication network is, for example, the Internet, wired communication, wireless communication, or other communication media.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10、20、30:可撓顯示面板
11、21、31:彎折區
100、400、1100:彎折損壞偵測裝置
110、410:比較電路
120、420:處理電路
411、412:比較器
413:轉換電路
430:驅動電路
1001、1002:電極
1110、1120:偵測電路
BS:彎折感測器
EE1、EE2:參考電性元件
EEt:目標電性元件
tar11、tar41:目標電性特徵
ref11、ref41、ref42:參考電性特徵
S210~S230、S510~S550:步驟
10, 20, 30:
圖1是依照本發明的一實施例的一種彎折損壞偵測裝置的電路方塊(circuit block)示意圖。
圖2是依照本發明的一實施例的一種彎折損壞偵測方法的流程示意圖。
圖3是依照本發明的一實施例說明圖1所示目標電性特徵tar11與參考電性特徵ref11的曲線示意圖。
圖4是依照本發明的另一實施例的一種彎折損壞偵測裝置的電路方塊示意圖。
圖5是依照本發明的另一實施例的一種彎折損壞偵測方法的流程示意圖。
圖6是依照本發明的一實施例說明圖4所示目標電性特徵tar41、參考電性特徵ref41與參考電性特徵ref42的曲線示意圖。
圖7是依照本發明的一實施例說明圖4所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的電路方塊示意圖。
圖8是依照本發明的另一實施例說明圖4所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的電路方塊示意圖。
圖9是依照本發明的一實施例說明圖8所示目標電性元件EEt、參考電性元件EE1與參考電性元件EE2的布局示意圖。
圖10是依照本發明的一實施例說明圖9所示第三電容(目標電性元件EEt)的布局剖面示意圖。
圖11是依照本發明的又一實施例的一種彎折損壞偵測裝置1100的電路方塊示意圖。
FIG. 1 is a schematic diagram of a circuit block of a bending damage detection device according to an embodiment of the present invention.
FIG. 2 is a schematic flowchart of a bending damage detection method according to an embodiment of the invention.
3 is a schematic diagram illustrating the curves of the target electrical characteristic tar11 and the reference electrical characteristic ref11 shown in FIG. 1 according to an embodiment of the present invention.
4 is a circuit block diagram of a bending damage detection device according to another embodiment of the invention.
FIG. 5 is a schematic flowchart of a bending damage detection method according to another embodiment of the present invention.
6 is a schematic diagram illustrating the curves of the target electrical characteristic tar41, the reference electrical characteristic ref41 and the reference electrical characteristic ref42 shown in FIG. 4 according to an embodiment of the present invention.
FIG. 7 is a circuit block diagram illustrating the target electrical component EEt, the reference electrical component EE1 and the reference electrical component EE2 shown in FIG. 4 according to an embodiment of the present invention.
FIG. 8 is a circuit block diagram illustrating the target electrical component EEt, the reference electrical component EE1 and the reference electrical component EE2 shown in FIG. 4 according to another embodiment of the present invention.
FIG. 9 is a schematic diagram illustrating the layout of the target electrical element EEt, the reference electrical element EE1 and the reference electrical element EE2 shown in FIG. 8 according to an embodiment of the present invention.
10 is a schematic cross-sectional view illustrating the layout of the third capacitor (target electrical element EEt) shown in FIG. 9 according to an embodiment of the present invention.
FIG. 11 is a circuit block diagram of a bending
S210~S230:步驟 S210~S230: steps
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TW201738870A (en) * | 2016-04-29 | 2017-11-01 | 樂金顯示科技股份有限公司 | Flexible organic light emitting display device |
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