CN210136001U - Temperature detection circuit, power supply device and display device - Google Patents
Temperature detection circuit, power supply device and display device Download PDFInfo
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- CN210136001U CN210136001U CN201921198323.0U CN201921198323U CN210136001U CN 210136001 U CN210136001 U CN 210136001U CN 201921198323 U CN201921198323 U CN 201921198323U CN 210136001 U CN210136001 U CN 210136001U
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Abstract
The application discloses temperature detection circuit, power supply unit and display device. The temperature detection circuit includes: a first resistance circuit; the second resistance circuit is connected with the first resistance circuit in series between the first power supply end and the second power supply end; and the output end is connected to a series node between the first resistor circuit and the second resistor circuit and provides indication voltage, wherein the first resistor circuit at least comprises a thin film transistor which is arranged adjacent to the chip, and the conduction resistance value of the thin film transistor changes along with the temperature of the chip, so that whether the temperature of the indication voltage representation chip is larger than a preset threshold value or not is judged. The temperature detection circuit utilizes the change of the on-resistance value of the thin film transistor along with the temperature of the chip, thereby realizing the real-time monitoring and protection of the temperature of the chip.
Description
Technical Field
The utility model relates to a show technical field, more specifically relates to a temperature detection circuit, power supply unit and display device.
Background
The thin film transistor liquid crystal display device has the characteristics of low power consumption, light weight, easy use, high brightness, high contrast, high response speed, no radiation, wide application range, high production yield, easy integration, update and substitution and the like, and is one of the mainstream technologies in the flat panel display industry at present.
The thin film transistor liquid crystal display device includes a display panel and an Integrated Circuit (IC) chip for driving the display panel so that the display panel plays a target display picture. Taking the source driving circuit as an example, the temperature of the source driving circuit is generally not more than 65 ℃ when the source driving circuit is normally operated. In some cases, due to reasons such as wrong code setting, the chip is abnormal inside, but the picture is still normal, and the temperature exceeds 65 ℃ but does not reach the threshold 120 ℃ for triggering the temperature protection of the chip. If the circuit board is operated in this state for a long time, the chip or even the circuit board Assembly (PCBA) may be damaged.
In the prior art, temperature detection is usually only present on a circuit board of a display panel, so the temperature obtained by the detection is the temperature of the display panel, and the actual temperature of a chip cannot be obtained. Therefore, how to realize effective protection of the chip is a technical problem which needs to be solved urgently in the field.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide a temperature detection circuit, a power supply device and a display device, wherein a first resistance circuit adopts a thin film transistor with an on-resistance value varying with temperature, and the thin film transistor is connected to a chip, so as to realize real-time monitoring and protection of the chip temperature.
According to the utility model discloses an aspect provides a temperature detection circuit, and temperature detection circuit is connected with the chip, temperature detection circuit includes: a first resistance circuit; the second resistance circuit is connected with the first resistance circuit in series between the first power supply end and the second power supply end; and the output end is connected to a series node between the first resistor circuit and the second resistor circuit and provides indication voltage, wherein the first resistor circuit at least comprises a thin film transistor which is arranged adjacent to the chip, and the conduction resistance value of the thin film transistor changes along with the temperature of the chip, so that the indication voltage represents whether the temperature of the chip is greater than a preset threshold value or not.
Preferably, the first resistance circuit further comprises an adjustable resistance, the adjustable resistance comprising a metal wire.
Preferably, the on-resistance of the thin film transistor is inversely related to temperature within a predetermined temperature range.
According to the utility model discloses a second aspect provides a power supply unit of chip, include: the temperature sensing circuit as described above; and the power supply module is connected between the temperature detection circuit and the chip and provides a power supply signal to a power supply end of the chip according to the indication voltage.
And the input module is connected between the temperature detection circuit and the power supply module and used for receiving the indication voltage and providing a first control signal to the power supply module according to the indication voltage, wherein when the temperature of the indication voltage characterization chip is not more than a preset threshold value, the first control signal is in an invalid range, and when the temperature of the indication voltage characterization chip is more than the preset threshold value, the first control signal is in a valid range.
Preferably, the power supply module includes: the first control circuit is connected to the input module and used for providing a second control signal, and the on and off of the first control circuit are controlled by the first control signal; the second control circuit is connected to the first control circuit and used for providing a third control signal, and the on and off of the second control circuit are controlled by the second control signal; and the power supply circuit is connected to the second control circuit and used for providing the power supply signal, and the on and off of the power supply circuit are controlled by the third control signal, wherein when the first control signal is in an invalid range, the power supply circuit provides the power supply signal, and when the first control signal is in an effective range, the power supply circuit stops providing the power supply signal.
Preferably, the input module includes: the same-direction input end of the comparator is connected to the temperature detection circuit so as to receive the indication voltage, and the output end of the comparator is connected to the inverting input end of the comparator; and a second resistor connected between the comparator and the power supply module, the second resistor providing the first control signal.
Preferably, the first control circuit includes: a third resistor, a first end of the third resistor being connected to a first power supply; a first switch tube, a first path end of which is connected to the second end of the third resistor, a second path end of which is connected to the reference ground, and a control end of which is connected to the input module.
Preferably, the second control circuit includes: a fourth resistor, a first end of the fourth resistor being connected to a second power supply; a first pass end of the second switch tube is connected to the second end of the fourth resistor, a second pass end of the second switch tube is connected to the reference ground, and a control end of the second switch tube is connected to the first control circuit.
Preferably, the power supply circuit includes: and a third switch tube, a first path end of which is connected to the second power supply, and a control end of which is connected to the second control circuit, wherein when the third control signal is invalid, the third switch tube is in a conducting state, the second path end of the third switch tube provides the power supply signal, and when the third control signal is valid, the third switch tube is in a turn-off state, and the third switch tube stops providing the power supply signal.
According to a third aspect of the present invention, there is provided a display device comprising: the temperature detection circuit according to the above, the temperature detection circuit for indicating a voltage; the time schedule controller is used for providing a mode switching signal according to the indication voltage; the display panel switches the display state according to the mode switching signal, wherein when the indicating voltage represents that the temperature of the chip is not greater than a preset threshold value, the time sequence controller controls the display panel to enter a working mode; and when the indicating voltage represents that the temperature of the chip is greater than a preset threshold value, the time sequence controller controls the display panel to enter a pause working mode.
The utility model provides a temperature detect circuit, power supply unit and display device, first resistance circuit adopt the thin film transistor who switches on the resistance along with temperature variation, and thin film transistor is connected to the chip, and after the temperature of chip reached predetermined threshold temperature, temperature detect circuit output indicating voltage perhaps changed display panel's display state in order to change power supply unit's power supply state to can effectively protect the chip when chip local temperature was too high. The power supply device provides a power supply signal according to the indication voltage, and can directly control the on-off state of the chip, thereby realizing timely and effective protection of the chip.
The temperature detection circuit, the power supply device and the display device have simple circuit structures, can save cost, and can be conveniently applied to the temperature detection of small and micro chips such as chips, thereby realizing the real-time monitoring and protection of the temperature of the small and micro chips such as chips. The thin film transistor can be conveniently integrated on a substrate made of glass and the like, is low in cost, high in sensitivity and small in size, does not increase the thickness of a panel, and saves the internal space of the display panel.
The temperature detection circuit and the display device change the display mode of the display panel according to the detection result of the temperature detection circuit, and the circuit structure is simple. The temperature detection circuit and the display device are adopted during factory detection, so that the cost and the process complexity are saved, and meanwhile, the circuit can be timely reminded to the staff to troubleshoot the circuit.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
fig. 1 shows a schematic structural diagram of a display device according to an embodiment of the present invention.
Fig. 2 shows a schematic structural diagram of a temperature detection circuit and a chip according to an embodiment of the present invention.
Fig. 3 shows a schematic circuit structure diagram of a temperature detection circuit according to an embodiment of the present invention.
Fig. 4 is a schematic circuit diagram of a temperature detection circuit according to another embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a temperature-sensitive thin film transistor according to an embodiment of the present invention.
Fig. 6 shows a temperature change curve of a temperature sensing thin film transistor according to an embodiment of the present invention.
Fig. 7 shows a schematic circuit diagram of a power supply device according to an embodiment of the present invention.
Fig. 8 shows a schematic structural diagram of a display device according to an embodiment of the present invention.
List of reference numerals
100 display panel
110 chip
111 pin
120 time schedule controller (Timer Control Register, TCON)
200 temperature detection circuit
210 temperature-sensitive thin film transistor
211 base plate
212 grid
213 gate dielectric layer
214 first channel layer
215 second channel layer
216 conductor layer
217 opening
300 power supply device
310 input module
320 power supply module
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
The following detailed description of the embodiments of the present invention is provided with reference to the accompanying drawings and examples.
Fig. 1 shows a schematic structural diagram of a display device according to an embodiment of the present invention.
As shown in fig. 1, the display device includes a display panel 100 and a chip 110, and the chip 110 is used for driving the display panel 100 to make the display panel 100 play a target display picture. The display panel 100 includes, for example, a plurality of Thin-Film transistors (TFTs) and a plurality of pixel capacitors formed between pixel electrodes and a common electrode, and the chip 110 includes, for example, a gate driving module and a source driving module.
In this embodiment, the surface of the chip 110 is provided with a temperature detection circuit 200, and the temperature detection circuit 200 is connected to the power supply device 300.
A temperature detection circuit 200 is arranged between the chip 110 and the circuit board, the temperature detection circuit 200 is connected to the power supply device 300, and the temperature detection circuit 200 is used for detecting the temperature of the chip 110 and providing an indication voltage, wherein the indication voltage represents whether the temperature of the chip 110 is greater than a preset threshold value.
The power supply device 300 is used for providing a power supply signal to the power supply terminal of the chip according to the indication voltage of the temperature detection circuit 200, thereby protecting the chip 110. The temperature detection circuit 200 includes, for example, a temperature sensing element, such as a temperature sensing thin film transistor. When the temperature of the chip 110 is higher than a predetermined threshold temperature, for example, 65 ℃, the output parameter of the temperature sensing element changes, thereby changing the power supply state of the power supply device 300.
Fig. 2 shows a schematic structural diagram of a temperature detection circuit and a chip according to an embodiment of the present invention.
As shown in FIG. 2, the surface of the chip 110 includes a plurality of leadsPins 111 are used to electrically couple the chip 110 to a circuit board of the display panel. A temperature detection circuit 200 is further included on the surface of the chip 110, and the temperature detection circuit 200 receives the first power supply terminal VDDA second power supply terminal VSSAnd a gate control signal VGAnd outputs a corresponding indication voltage V according to the temperature of the chip 110OUT1。
In this embodiment, the temperature detection circuit 200 is located on the surface of the chip 110 connected to the circuit board, which facilitates the electrical connection of the components of the temperature detection circuit. Furthermore, the air circulation performance of the surface is poor, the temperature is high, after the surface reaches the preset threshold temperature, the temperature detection circuit outputs the indication voltage to change the power supply state of the power supply device, and the chip can be effectively protected when the local temperature of the chip is too high.
Fig. 3 shows a schematic circuit structure diagram of a temperature detection circuit according to an embodiment of the present invention.
As shown in fig. 3, the temperature detection circuit 200 includes a first resistor circuit including a resistor R, a second resistor circuit, and an output terminal0And a temperature-sensitive thin film transistor T1The second resistor circuit includes a resistor R1. The second resistance circuit and the first resistance circuit are connected in series at the first power supply end VDDAnd a second power supply terminal VSSTo (c) to (d); the output end is connected to a series node between the first resistor circuit and the second resistor circuit and provides indicating voltage, wherein the first resistor circuit at least comprises a thin film transistor which is arranged adjacent to the chip, and the on resistance value of the thin film transistor changes along with the temperature of the chip, so that whether the temperature of the indicating voltage representation chip is larger than a preset threshold value or not is judged.
Resistance R0Resistance R1And a temperature-sensitive thin film transistor T1. Resistance R0Is connected to the first power supply terminal VDDAnd the other end is connected to the temperature sensing thin film transistor T1Of the substrate. Resistance R1Is connected to the second power supply terminal VSSAnd the other end is connected to the temperature sensing thin film transistor T1Of the substrate. Resistance R1And a temperature sensing thin film transistor T1Section betweenThe point is used as the output terminal of the temperature detection circuit 200, and the output terminal outputs the indication voltage VOUT1. The gate of the temperature sensing TFT T1 is connected to the gate control signal VG。
Temperature sensing thin film transistor T1Decreases with increasing temperature. When the first power supply terminal VDDA second power supply terminal VSSAnd a gate control signal VGWhen the value of (A) is not changed, the temperature-sensitive thin film transistor T is increased along with the temperature in a certain temperature range1Is reduced in resistance value of R0And a thin film transistor T1Is reduced, thereby indicating the voltage VOUT1And is increased. When the temperature reaches a certain value, the indicating voltage V is at the momentOUT1Increasing to a threshold value, thereby changing the power supply state of the power supply module.
Fig. 4 is a schematic circuit diagram of a temperature detection circuit according to another embodiment of the present invention.
As shown in fig. 4, the temperature detection circuit 200 is the same as the temperature detection circuit in fig. 3, and is not described herein again. In this embodiment, an adjustable resistor R is used0And an adjustable resistance R1Therefore, the threshold temperature of the power supply module triggered by the temperature detection circuit can be adjusted according to the requirement. For example, the resistance R is adjusted by the trace length of the metal wire0And a resistance R1The size of (2). The metal wire is used as the adjustable resistor, the resistor can be well integrated on the substrate together with the thin film transistor, and the space occupied by the temperature detection circuit is reduced.
Fig. 5 is a schematic structural diagram of a temperature-sensitive thin film transistor according to an embodiment of the present invention.
As shown in fig. 5, the temperature sensing thin film transistor includes a plurality of thin films sequentially deposited on a substrate 211. For example, the temperature-sensitive thin film transistor includes a gate electrode 212, a gate dielectric layer 213, a first channel layer 214, a second channel layer 215, and a conductor layer 216 sequentially deposited on a substrate 211, and openings are formed in the first channel layer 214, the second channel layer 215, and the conductor layer 216 to divide the conductor layer 216 into two parts, which serve as a drain electrode and a source electrode, respectively. The gate, the source, and the drain are composed of, for example, single crystal silicon or polycrystalline silicon, the gate dielectric layer 213 includes, for example, silicon nitride, the first channel layer 214 includes, for example, intrinsic single crystal silicon (I-a-Si), and the second channel layer 215 includes, for example, heavily doped N-type polycrystalline silicon (N + a-Si). In this embodiment, the gate electrode 212 is located between the substrate 211 and the gate dielectric layer 213, so as to avoid light leakage current caused by ambient light irradiation, and avoid the influence of ambient light on the temperature detection circuit output by the temperature detection circuit.
Fig. 6 shows a temperature change curve of a temperature sensing thin film transistor according to an embodiment of the present invention.
The first power supply terminal V is given by the temperature detection circuit shown in FIG. 3 or FIG. 4 and the temperature sensing thin film transistor shown in FIG. 5DDA second power supply terminal VSSAnd a gate control signal VGTo the indication voltage V output by the temperature detection circuitOUT1The test was performed and the test results are shown in fig. 6. At a temperature of less than 30 ℃, indicating a voltage VOUT1Decreases with increasing temperature, indicating a voltage VOUT1The voltage of (2) is about 1.5V, and the voltage change is not obvious. At a temperature greater than 30 deg.C, indicating a voltage VOUT1Increasing with increasing temperature, indicating a voltage V when the temperature rises from 30 ℃ to 90 DEG COUT1The voltage of (a) increases from about 1.5V to about 3.5V, and the voltage change is significant. In this embodiment, the threshold temperature for turning on the power supply module is set to 65 ℃ at a given first power supply terminal VDDA second power supply terminal VSSAnd a gate control signal VGAfter (2), it can be derived from fig. 6 that the turn-on voltage of the power supply module is set to 3V.
Fig. 7 shows a schematic circuit diagram of a power supply device according to an embodiment of the present invention.
As shown in fig. 7, the power supply device 300 includes an input module 310 and a power supply module 320. The power supply device 300 receives the indication voltage V output by the temperature detection circuitOUT1And provides power supply signal V to the chipIN。
The input module 310 comprises a comparator U1And a resistance R2The input module 310 is used for receiving the indication voltage V output by the temperature detection circuitOUT1And comparing the indication voltage VOUT1And to the power supply moduleBlock 320 provides a first control signal. Comparator U1The non-inverting input terminal of the temperature detection circuit receives the indication voltage V output by the temperature detection circuitOUT1The reverse input end is connected to the comparator U1To the output terminal of (a). Comparator U1Is connected to a power supply VDD, the voltage of the power supply VDD is for example 10V, and a comparator U1The negative supply terminal of (2) is connected to ground. Comparator U1Is connected to a resistor R2One terminal of (1), resistance R2And the other end is the output of the input module 310. When the temperature of the indication voltage characterization chip is not greater than the preset threshold value, the first control signal is in an invalid range; when the temperature of the indication voltage characterization chip is larger than the preset threshold value, the first control signal is in a valid range.
The input module 310 forms a voltage follower, and since the voltage follower has the characteristics of high input impedance and low output impedance, it presents a high impedance state to the previous stage circuit and a low impedance state to the next stage circuit, the input module 310 is used for isolating the temperature detection circuit from the power supply module 320 to eliminate the mutual influence therebetween, and simultaneously can avoid the loss of the indication voltage from the temperature detection circuit to the power supply module 320. In an alternative embodiment, the input module 310 may be omitted, so that the power supply module 320 directly receives the indication voltage V outputted by the temperature detection circuitOUT1。
The power supply module 320 includes a first control circuit, a second control circuit and a power supply circuit, and is configured to receive the first control signal output by the input module 310 and control a switching state of the power supply circuit according to the first control signal to control the power supply VINThe supply state of (1).
The first control circuit comprises a power supply VCC1Resistance R3And a switching tube Q1For providing a second control signal to the second control circuit. Resistance R3Is connected to a power supply VCC1And the other end is connected to a switching tube Q1First path terminal of (1), switching tube Q1The second path of the switch is connected with the reference ground, and the switching tube Q1Is connected to the output of the input module 310. In the first control circuit, a resistor R3And a switching tube Q1As an output of the first control circuit. Switch tube Q1Is an N-channel MOS Field-Effect Transistor (MOSFET). When the first control signal is in an invalid range, the second control signal is in an effective state; when the first control signal is in the valid range, the second control signal is in an invalid state.
The second control circuit comprises a power supply VCC2Resistance R4And a switching tube Q2. Resistance R4Is connected to a power supply VCC2And the other end is connected to a switching tube Q2First path terminal of (1), switching tube Q2The second path of the switch is connected with the reference ground, and the switching tube Q2Is connected to the output of the first control circuit. In the second control circuit, a resistor R4And a switching tube Q2As an output of the second control circuit, the output transmits a third control signal to the supply circuit. Switch tube Q2Is an N-channel MOS field effect transistor. When the second control signal is in the effective range, the third control signal is in an invalid state; when the first control signal is in the invalid range, the second control signal is in the valid state.
The power supply circuit comprises a switching tube Q3The power supply circuit and the second control circuit use a common power supply VCC2In alternative embodiments, a separate power supply may be used to power the power supply circuitry. Switch tube Q3First path terminal power VCC2Switching tube Q3The second path terminal of (a) is the output terminal of the power supply circuit. Switch tube Q3The control terminal of the second control circuit is connected to the output terminal of the second control circuit for receiving the third control signal transmitted by the second control circuit. Switch tube Q3Is a P-channel MOS field effect transistor. When the third control signal is invalid, the third switch tube Q3In a conducting state, the third switch tube Q3The second path terminal of the power supply circuit provides a power supply signal; when the third control signal is active, the third switch tube Q3In the off state, the third switching tube Q3The supply of the power supply signal is stopped.
In this embodiment, when the voltage V is indicatedOUT1When the temperature of the characterization chip is greater than the predetermined threshold, the voltage of the first control signal output by the input module 310 is greater than the voltage of the switching tube Q1Threshold voltage of, switching tube Q1The first control circuit is conducted, so that the first control circuit is in a conducting state, and the first control circuit inputs a second control signal to the second control circuit to be at a low level which is smaller than the Q of the switching tube3Such that the second control circuit is in an off state. When the second control circuit is in the off state, the output node of the second control circuit is at high level, so that the switching tube Q is switched on2In an off state, the power supply VCC2The supply of the power supply signal to the chip is stopped.
When indicating the voltage VOUT1When the temperature of the characterization chip is not greater than the predetermined threshold, the voltage of the first control signal output by the input module 310 is less than the voltage of the switching tube Q1Threshold voltage of, switching tube Q1The first control circuit is switched off, so that the first control circuit is in a switched-off state, and the first control circuit inputs a second control signal to the second control circuit to be at a high level which is greater than the Q of the switching tube3So that the second control circuit is in a conducting state. When the second control circuit is in a conducting state, the output node of the second control circuit is at a low level, so that the switching tube Q is switched on2In a conducting state, a power supply VCC2Power continues to be supplied to the chip.
Fig. 8 shows a schematic structural diagram of a display device according to an embodiment of the present invention.
As shown in fig. 8, the display device includes a temperature detection circuit (not shown), a timing controller 120, and a display panel 100. The temperature detection circuit is used for providing indication voltage; the timing controller 120 is configured to provide a mode switching signal according to the indication voltage; the display panel 100 is configured to switch a display state according to a mode switching signal. When the temperature of the indication voltage characterization chip is not greater than the predetermined threshold, the timing controller 120 controls the display panel 100 to enter a working mode; when the temperature of the indication voltage characterization chip is greater than the predetermined threshold, the timing controller 120 controls the display panel 100 to enter the pause operation mode.
For example, the indication voltage V output by the temperature detection circuitOUT1Direct connection to timingA controller 120 for setting a threshold voltage for triggering the timing controller 120 and then indicating a voltage VOUT1When the voltage is greater than the threshold voltage, the timing controller 120 outputs preset display data to the display panel 100, so that the display panel 100 displays a word, such as "IC overheat, please power off immediately check", to prompt a worker to perform power off check on the chip.
In this embodiment, the timing controller 120 and the display panel 100 are the original timing controller and display panel of the display system. In an alternative embodiment, the timing controller 120 and the display panel 100 are independent from the original timing controller and display panel of the system, and the timing controller 120 and the display panel 100 are separately provided for prompting the staff to perform maintenance.
In accordance with the embodiments of the present invention as set forth above, these embodiments are not exhaustive and do not limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and its various embodiments with various modifications as are suited to the particular use contemplated. The present invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A temperature detection circuit, characterized in that, temperature detection circuit is connected with the chip, temperature detection circuit includes:
a first resistance circuit;
the second resistance circuit is connected with the first resistance circuit in series between the first power supply end and the second power supply end; and
an output terminal connected to a series node between the first resistance circuit and the second resistance circuit and providing an indication voltage,
the first resistance circuit at least comprises a thin film transistor which is arranged adjacent to the chip, and the conducting resistance value of the thin film transistor changes along with the temperature of the chip, so that whether the temperature of the indicating voltage representing the chip is larger than a preset threshold value or not is judged.
2. The temperature sensing circuit of claim 1, wherein the first resistive circuit further comprises an adjustable resistor, the adjustable resistor comprising a metal wire.
3. The temperature sensing circuit of claim 1, wherein the on-resistance of the thin film transistor is inversely related to temperature over a predetermined temperature range.
4. A power supply device for a chip, comprising:
a temperature detection circuit according to any one of claims 1 to 3; and
the power supply module is connected between the temperature detection circuit and the chip and provides a power supply signal to a power supply end of the chip according to the indication voltage;
the input module is connected between the temperature detection circuit and the power supply module, receives the indication voltage and provides a first control signal to the power supply module according to the indication voltage,
when the temperature of the indication voltage characterization chip is not larger than a preset threshold value, the first control signal is in an invalid range, and when the temperature of the indication voltage characterization chip is larger than the preset threshold value, the first control signal is in an effective range.
5. The power supply device according to claim 4, wherein the power supply module comprises:
the first control circuit is connected to the input module and provides a second control signal, and the on and off of the first control circuit are controlled by the first control signal;
the second control circuit is connected to the first control circuit and provides a third control signal, and the on and off of the second control circuit are controlled by the second control signal; and
a power supply circuit connected to the second control circuit and providing the power signal, wherein the power supply circuit is controlled to be turned on and off by the third control signal,
when the first control signal is in an invalid range, the power supply circuit provides the power supply signal, and when the first control signal is in an effective range, the power supply circuit stops providing the power supply signal.
6. The power supply device of claim 4, wherein the input module comprises:
the same-direction input end of the comparator is connected to the temperature detection circuit so as to receive the indication voltage, and the output end of the comparator is connected to the inverting input end of the comparator; and
a second resistor connected between the comparator and the power supply module, the second resistor providing the first control signal.
7. The power supply device according to claim 5, wherein the first control circuit comprises:
a third resistor, a first end of the third resistor being connected to a first power supply;
a first switch tube, a first path end of which is connected to the second end of the third resistor, a second path end of which is connected to the reference ground, and a control end of which is connected to the input module.
8. The power supply device according to claim 5, wherein the second control circuit comprises:
a fourth resistor, a first end of the fourth resistor being connected to a second power supply;
a first pass end of the second switch tube is connected to the second end of the fourth resistor, a second pass end of the second switch tube is connected to the reference ground, and a control end of the second switch tube is connected to the first control circuit.
9. The power supply device according to claim 8, wherein the power supply circuit comprises:
a third switch tube, a first path end of the third switch tube is connected to the second power supply, a control end of the second switch tube is connected to the second control circuit,
wherein when the third control signal is invalid, the third switch tube is in a conducting state, the second channel terminal of the third switch tube provides the power signal,
when the third control signal is valid, the third switch tube is in an off state, and the third switch tube stops providing the power supply signal.
10. A display device, comprising:
a temperature detection circuit according to any one of claims 1 to 3 for providing an indication voltage;
the time schedule controller provides a mode switching signal according to the indication voltage; and
a display panel for switching a display state according to the mode switching signal,
when the indicating voltage represents that the temperature of the chip is not greater than a preset threshold value, the time sequence controller controls the display panel to enter a working mode;
and when the indicating voltage represents that the temperature of the chip is greater than a preset threshold value, the time sequence controller controls the display panel to enter a pause working mode.
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| CN201921198323.0U CN210136001U (en) | 2019-07-29 | 2019-07-29 | Temperature detection circuit, power supply device and display device |
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| CN201921198323.0U CN210136001U (en) | 2019-07-29 | 2019-07-29 | Temperature detection circuit, power supply device and display device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933070A (en) * | 2020-07-27 | 2020-11-13 | 重庆惠科金渝光电科技有限公司 | Drive circuit and display device |
| WO2023116325A1 (en) * | 2021-12-21 | 2023-06-29 | 华为技术有限公司 | Integrated circuit and electronic device |
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2019
- 2019-07-29 CN CN201921198323.0U patent/CN210136001U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933070A (en) * | 2020-07-27 | 2020-11-13 | 重庆惠科金渝光电科技有限公司 | Drive circuit and display device |
| WO2023116325A1 (en) * | 2021-12-21 | 2023-06-29 | 华为技术有限公司 | Integrated circuit and electronic device |
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