TWI712823B - 光學結構與印刷微發光二極體之隨機陣列之自對準 - Google Patents
光學結構與印刷微發光二極體之隨機陣列之自對準 Download PDFInfo
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Abstract
印刷微發光二極體(LED)具有相對較高及較窄之一頂部金屬陽極電極及一底部陰極電極。在固化LED墨水之後,該等底部電極與一基板上之一導電層電接觸。該等LED之位置係隨機的。接著,將一薄介電層印刷於該等LED之間,且接著將諸如一奈米線層之一薄導電層印刷於該介電層上以接觸該等陽極電極。該等高陽極電極上之該頂部導電層具有對應於該等LED之該等位置之凸塊。接著,印刷僅駐留於該等凸塊之間的該頂部導電層之「低」區域中之一全疏液體。接著,將任何光學材料均勻印刷於所得表面上。該印刷光學材料藉由黏附及表面張力來僅累積於該等凸塊區域上,因此與該等個別LED自對準。
Description
本發明係關於印刷預成形發光二極體(LED)上之光學結構之自對準,其中作為印刷程序之一自然結果,LED在一基板上呈一隨機陣列。
本發明受讓人靠自己獲知如何在一導電基板上形成及印刷具有適當定向之微小垂直發光二極體(LED)且並聯連接LED以形成一光片。可在名稱為「Method of Manufacturing a Printable Composition of Liquid or Gel Suspension of Diodes」之美國專利8,852,467中找到此LED印刷之細節,該專利讓與本發明受讓人且以引用的方式併入本文中。
圖1係一單一預成形LED 16之一橫截面圖,LED 16與其他LED混合於一可印刷溶液中以形成一LED墨水且接著依任何圖案印刷於任何表面上。各LED 16可具有約人類頭髮之一寬度且可具有10微米至200微米之間的一直徑。存在印刷LED 16之諸多方式,諸如網版印刷、凹版印刷、膠版印刷等等。印刷程序可依任何圖案(諸如二維形狀)印刷LED墨水,但作為印刷程序之一自然結果,個別LED將隨機定位於基板表面上。在發藍光LED 16之實例中,各LED 16包含半導體GaN層17,其包含一n層、一主動層及一p層。發射其他波長之LED可使用其他材料。可使用一磷光體來色彩轉換光。
製造含有成千上萬個垂直LED之一LED晶圓,使得各LED 16之頂部金屬陰極電極18包含一反射層。各LED 16之頂部金屬陽極電極20相對較窄以允許幾乎所有LED光21自陽極側逸出。藉由一黏著層來接合至LED晶圓之「頂」面之一載體晶圓可用於進接LED之兩側以進行金屬化。接著,(諸如)藉由圍繞各LED向下蝕刻溝槽至黏著層且溶解暴露黏著層或藉由薄化載體晶圓來單粒化LED 16。
接著,將微小LED均勻浸漬於包含一黏度改質聚合物樹脂之一溶劑中以形成用於印刷之一LED墨水。
若期望在印刷之後在與基板相反之一方向上定向陽極電極20,則使電極20變高,使得LED 16在其沈降於基板表面上時藉由液體壓力來旋轉於溶劑中。LED 16旋轉至最小阻力之一定向。已達成超過90%之相同定向。
在LED 16作為一單層印刷於基板上之後,作為LED在被印刷時隨機定位於溶劑內之一自然結果,LED 16呈一非確定性隨機陣列。
在一些應用中,可期望直接在各印刷LED 16上精確定位一個別透鏡、一磷光體、量子點或其他光學結構且不覆蓋LED 16之間的區域。然而,此無法使用先前技術來實現,因為LED 16非常小且被隨機定位。
需要用於直接在印刷LED上精確定位光學結構之一技術,其中技術適合於諸如一輥捲式製程之一高速製程。
本發明揭示一種用於使個別光學結構直接在呈印刷LED之一隨機陣列之相關聯LED上自對準之技術。
LED具有相對較高及較窄之一頂部金屬陽極電極及一大而寬之底部陰極電極,使得流體動力引起LED沈降於基板上,其中陰極面向下(與一導電層接觸)且陽極面向上。在一實例中,LED係10微米至200微米寬,且陽極電極在LED半導體層上方延伸10微米至200微米。可使LED之極性反向,其中高而窄之「頂部」電極可為陰極電極。
LED之形狀可經客製化以與本發明方法一起使用且未必為上文所描述之先前技術LED。
在固化LED墨水之後,底部陰極與基板上之一導電層電接觸。接著,將一薄介電層印刷於LED及導電層上以使導電層絕緣。高陽極電極突出穿過介電層。接著,將諸如一奈米線層之一薄導電層印刷於介電層及陽極電極上且接著固化薄導電層,使得陽極電極與頂部導電層電接觸。印刷LED現全部由兩個導電層並聯連接。
高陽極電極上之頂部導電層具有與陽極電極之位置對應之凸塊。
接著,在頂部導電層上印刷一市售全疏液體作為一非常薄層。全疏液體經設計以排斥諸如頂部導體材料之大部分其他材料。全疏液體具有一黏度及表面張力,使得其芯吸(wick off)凸塊且僅駐留於凸塊之間的頂部導電層之「低」區域中。接著,固化全疏層,使得導電層凸塊透過印刷LED之各者上方之全疏層來暴露。暴露部分具有大致相同於下伏LED之大小。
接著,將任何光學材料均勻印刷於所得表面上。光學材料可為透明丙烯酸、一液體黏結劑中之磷光體粒子、一液體黏結劑中之量子點或任何其他光學材料。丙烯酸或液體黏結劑受凸塊之間的固化全疏層排斥,但黏附至直接位於LED上之凸塊區域(即,暴露頂部導電層)。印刷光學材料藉由表面張力來累積於凸塊區域上。接著,(諸如)藉由熱或UV來固化光學材料。固化可僅硬化材料或溶解任何溶劑,其取決於材料。
丙烯酸或液體黏結劑可在各LED上自然形成一大體上半球形光學結構,且光學材料之印刷量判定大體上半球形光學結構之高度及形狀。
依此方式,可在各LED上形成透鏡。透鏡可依任何所要方式漫射光或折射光。若光學材料係一波長轉換材料,則可將一次LED光轉換成一較長波長光。一次LED光(諸如藍光)可與二次光組合以產生一寬色域。
在一實施例中,可在光學材料之印刷期間遮罩含有所有印刷LED之一子集之基板表面之區域,使得光學材料僅位於LED之子集上以達成一類型之光學效應,諸如一特定色彩。接著,遮罩基板之其他部分且印刷一不同光學材料以達成LED之一不同子集之另一類型之光學效應。依此方式,可在選定區域中形成紅色、綠色及藍色像素或其他色彩圖案,或可產生任何其他光學圖案。
使用暴露凸塊來使結構自對準之本發明不僅限於印刷LED,而是可應用於其中使結構與裝置之一隨機陣列自對準之任何其他技術。對準結構不限於為光學結構。
相關申請案之交叉參考
本申請案係基於William Johnstone Ray等人於2018年4月10日申請之美國臨時申請案第62/655,720號且主張該案之優先權,該案讓與本發明受讓人且以引用的方式併入本文中。
參考印刷LED及使光學結構在各LED上自對準來描述本發明之一實例。然而,本發明可用於使任何結構在任何印刷裝置上自對準,其中印刷裝置隨機定位於一基板上。本發明可用於其中一凸塊產生於一裝置上之任何情境中,因為一全疏層形成與各凸塊自對準之一開口,且任何後續沈積液體僅黏附至與裝置自對準之凸塊區域。
圖2繪示一基板22上並聯連接之印刷LED 16之一隨機陣列。LED 16可相同於圖1中之先前技術LED 16或可為修改版本以提供用於使光學結構自對準之所要形狀凸塊。
圖2中提供一起始基板22。若基板22本身不導電,則(諸如)藉由印刷來將一反射導體層24 (例如鋁)沈積於基板22上。基板22較佳為薄及撓性以輕質、低成本、將熱很好地傳導至空氣或一散熱器且易於處理。基板22可為一適合聚合物(諸如聚碳酸酯、PMMA或PET),且可為撓性以自一輥施配。基板22可為適合於最終產品之任何大小。起始基板22甚至可為一習知撓曲電路基板,其中金屬(例如銅)跡線已形成於基板22上以電接取各種導體層。
接著,(諸如)藉由膠版印刷(其中一捲板上之一圖案判定一輥捲式程序之沈積)或藉由網版印刷(其中一適合網格允許LED通過且控制LED層之厚度)來將LED 16印刷於導體層24上。可依諸如二維形狀之任何圖案印刷LED 16,但歸因於LED 16印刷為一LED墨水,圖案內之LED之精確位置不可預測。由於相對較低濃度,LED 16將印刷為一單層且非常均勻分佈但隨機配置於導體層24上。
接著,藉由使用(例如)一紅外線爐之熱來蒸發LED墨水溶劑。在此固化之後,LED 16藉由作為一黏度改質劑溶解於LED墨水中之少量殘餘樹脂來保持附著至下伏導體層24。樹脂之黏性及固化期間LED 16下方之樹脂容積減少使底部LED電極18緊貼下伏導體24以與其歐姆接觸。
接著,將一介電層26印刷於表面上且固化介電層26以囊封LED 16且進一步將其固定於適當位置中。高陽極電極20突出穿過介電層26。介電層26經設計以在固化期間藉由表面張力來自平坦化以拉脫或去濕電極20。因此,無需蝕刻介電層26。若介電層26仍黏附至電極20,則可使用一短毯覆式蝕刻來暴露電極20。
接著,將一頂部透明導體層28印刷於介電層26上以電接觸電極20,且在適合於所使用之透明導體之類型之一爐中固化頂部透明導體層28。導體層28用墨水非常均勻地濕潤介電層26及電極20,因此在所有表面上形成一實質上均勻厚層。印刷程序確保均勻沈積導體層墨水。在一實施例中,導體層28包括一溶液中之銀合金奈米線。奈米線在印刷之後依隨機角度重疊。當固化(加熱)印刷層時,將重疊線燒結在一起以產生一高度導電但非常透明之網格。此等透明導體可印刷溶液係眾所周知的且可在市場上購得。
藉由使透明導體層28比電極20薄很多來形成導體層28中之凸塊29。凸塊29之高度取決於頂部電極20之高度及導體層28之厚度。本發明需要具有僅數微米之一高度之一凸塊29,且在一實施例中,凸塊29之高度比導體層28之凹槽高至少10微米。一較大凸塊29將導致一較寬區域用於由光學結構黏附,如稍後將描述。因此,可藉由控制凸塊29大小來客製化光學結構之尺寸。在實例中,各凸塊29之寬度足以使相關聯LED 16由稍後將描述之一光學結構完全覆蓋。
LED 16現全部電並聯連接。在製程之一適合點處,若需散佈電流,則金屬匯流排條30至33沿導體層24及28之對置邊緣印刷且分別電端接於陽極及陰極引線(圖中未展示)處以使LED 16通電。匯流排條30至33將最終連接至一正或負驅動電壓。
圖3係圖2之結構之一俯視圖。圖2之橫截面係圖3之一水平對分。印刷層中之LED 16之位置係隨機的。在實例中,LED底面積係六邊形。
若將一適合電壓差施加於陽極及陰極引線,則將點亮具有適當定向之所有LED 16。
接著,如圖4中所展示,使一全疏液體作為一墨水均勻沈積於頂部導體層28上(包含凸塊29上)且固化全疏液體以形成一全疏層38。根據定義,全疏層不黏附至包含頂部導體層28之各種材料。全疏液體經設計以具有一低黏度及適當表面張力,因此其藉由表面張力來芯吸(去濕)凸塊29且蓄集於凸塊29之間的凹槽中。去濕僅花費數秒。所沈積之全疏液體之量應使得突出穿過全疏層38之導體層28之凸塊29不覆蓋LED 16之發光區域之任何部分。具有一選定黏度及表面張力之適合全疏液體可在市場上購得。Wang等人之論文「Covalently Attached Liquids: Instant Omniphobic Surfaces with Unprecedented Repellency」(Agnew. Chem. 2016,128,252-256)中描述一適合全疏液體,該論文以引用的方式併入本文中。全疏液體僅需疏離本程序中所使用之材料。
圖5係圖4之結構之一俯視圖,其展示固化全疏層38如何具有包圍各LED 16之開口42,頂部導體層28凸塊突出穿過開口42一選定量。全疏層38應儘可能薄(諸如約1微米)以最大化自對準開口42之大小。
若適當的話,若需要促進凸塊29去濕,則可在沈積全疏液體之前將一材料之一薄層適當塗覆於透明導體層28上。因此,無需全疏層38與導體層28直接接觸。
接著,如圖6中所展示,將一光學結構墨水44均勻印刷於圖4及圖5之結構上。在一實例中,光學結構墨水44係諸如丙烯酸之一透明聚合物,其將在各LED 16上形成半球形透鏡。在另一實施例中,光學結構墨水44可為用於漫射來自LED 16之光之一漫射材料。在另一實施例中,光學結構墨水44可為浸漬於一液體黏結劑中之磷光體粒子或量子點。
液體聚合物或黏結劑受全疏層38排斥且僅在凸塊處濕潤暴露導體層28。表面張力將所有周圍液體聚合物或黏結劑拉脫全疏層38且在覆蓋各LED 16之凸塊上形成一大體上半球形光學結構。因此,光學結構與LED 16自對準。
在圖6之實例中,光學結構墨水44係一透明丙烯酸,其在固化之後形成一透鏡。來自一通電LED 16之一光線46展示為由透鏡折射。墨水44甚至可在固化之後適合於提供一所要折射率以提高光提取。
所沈積之光學結構墨水44之量(容積)判定LED 16上之光學結構之厚度及形狀。
除光學材料48具漫射性(諸如具有光散射粒子之丙烯酸、或一透明黏結劑中之磷光體粒子或一透明黏結劑中之量子點)之外,圖7相同於圖6。光線50展示為由光學材料48散射。
若需要促進將光學材料48黏附至凸塊29,則可在沈積光學材料48之前將一材料之一薄層適當塗覆於凸塊29上。因此,無需光學材料48與導體層28直接接觸。
LED片之不同區域可藉由在沈積光學結構墨水之前遮罩區域來接收諸如不同磷光體層之不同光學結構。例如,一大片可含有可作為個別像素選擇性通電之點內之LED之隨機配置。紅色像素之一遮罩可具有適合於紅色像素之開口,且沈積一紅色磷光體墨水,使得紅色磷光體墨水僅與紅色像素點中之LED自對準。一綠色遮罩可用於暴露與綠色像素相關聯之LED之點,且接著僅在遮罩開口中沈積一綠色磷光體墨水以與綠色像素中之LED自對準。若LED發射藍光,則藍色像素無需任何磷光體。
在另一實施例中,光學結構之多個層可與LED 16自對準,因為光學結構墨水將僅黏附至頂部電極20或其他光學結構墨水。例如,多個磷光體層可在各LED 16上自對準,接著在一自對準透鏡層上自對準。
可設想諸多其他變體。
圖8示意性繪示用於藉由在一輥捲式程序中印刷來製造具有光學結構之LED片之一可能組裝線。輥60含有基板材料61,且輥62係一捲取輥。標記各種作業站。程序循序印刷各種層且固化層。膠版印刷優先用於使用一輥捲式程序之印刷。在實例中,功能區塊64印刷導體墨水、LED墨水、介電墨水,且固化墨水以導致頂層導體層中之凸塊與LED之位置重合(圖2)。功能區塊66印刷及固化全疏液體且固化其以導致凸塊突出穿過固化全疏層(圖4)。功能區塊68印刷與頂部導體層中之凸塊自對準之光學材料(圖6及圖7)。
儘管已使用一全疏材料作為一實例,但排斥僅需針對用於形成LED片之程序中之材料,諸如頂部導體層28及光學結構墨水。
本文中所使用之各種定向屬性(諸如底部、頂部及垂直)不應被解釋為傳達相對於地球表面之絕對方向,而是用於傳達圖紙保持直立時相對於封閉圖形之定向。
儘管已展示及描述本發明之特定實施例,但熟習技術者應明白,可在不背離本發明之情況下對其廣泛態樣作出改變及修改,因此,隨附申請專利範圍將落於本發明之真正精神及範疇內之所有此等改變及修改涵蓋於其範疇內。
16‧‧‧發光二極體(LED)
17‧‧‧半導體GaN層
18‧‧‧底部金屬陰極電極
20‧‧‧頂部金屬陽極電極
21‧‧‧LED光
22‧‧‧基板
24‧‧‧導體層
26‧‧‧介電層
28‧‧‧頂部透明導體層
29‧‧‧凸塊
30‧‧‧金屬匯流排條
31‧‧‧金屬匯流排條
32‧‧‧金屬匯流排條
33‧‧‧金屬匯流排條
38‧‧‧全疏層
42‧‧‧開口
44‧‧‧光學結構墨水
46‧‧‧光線
48‧‧‧光學材料
50‧‧‧光線
60‧‧‧輥
61‧‧‧基板材料
62‧‧‧輥
64‧‧‧功能區塊
66‧‧‧功能區塊
68‧‧‧功能區塊
圖1係由本發明受讓人設計之一可印刷微LED之一橫截面圖。
圖2係藉由將LED夾置於一底部導電層與一薄頂部導電層之間來並聯連接之印刷微LED之一隨機陣列之一橫截面圖。歸因於各LED之高陽極電極,頂部導電層中之凸塊位於各LED上。圖2係圖3之一水平對分橫截面。
圖3係展示印刷LED之隨機位置的一基板之一俯視圖,其中各LED具有六方底面積。
圖4繪示具有印刷於其上且接著經固化之一液體全疏層之圖2之結構,其中全疏層藉由表面張力來芯吸凸塊。
圖5係圖4之結構之一俯視圖,其展示未由全疏層覆蓋之各LED上方之區域。
圖6繪示一液體光學材料印刷、噴塗或依其他方式沈積於結構上且僅黏附至突出穿過全疏層之頂部導電層凸塊之後之圖4之結構。若光學材料係一透明透鏡材料,則一光線展示為由透鏡折射。
圖7繪示其中光學材料係一漫射材料或一波長轉換材料(其中材料散射光)之一實例。
圖8繪示如何在一高速輥捲式程序中以非常低成本執行所有裝置及層之印刷及光學結構之自對準。
16‧‧‧發光二極體(LED)
18‧‧‧底部金屬陰極電極
20‧‧‧頂部金屬陽極電極
22‧‧‧基板
24‧‧‧導體層
26‧‧‧介電層
28‧‧‧頂部透明導體層
30‧‧‧金屬匯流排條
31‧‧‧金屬匯流排條
32‧‧‧金屬匯流排條
33‧‧‧金屬匯流排條
38‧‧‧全疏層
44‧‧‧光學結構墨水
46‧‧‧光線
Claims (24)
- 一種製造一自對準結構之方法,其包括:在一基板上印刷裝置,使得該等裝置隨機配置於該基板上;使用一第一層來覆蓋該等裝置及該等裝置之間的區域,使得凸塊在該第一層中與該等裝置之位置重合;沈積覆於該第一層上之一液體第二層,該液體第二層不黏附至該等凸塊,使得該液體第二層歸因於表面張力而僅駐留於該等凸塊之間的區域中以導致該等凸塊之至少部分突出穿過該液體第二層;固化該液體第二層以形成一固化第二層;及將一第一材料沈積於該等凸塊及該固化第二層上,其中該第一材料僅黏附至突出穿過該固化第二層之該等凸塊,使得該第一材料與該等裝置自對準。
- 如請求項1之方法,其中該等裝置係印刷於該基板上之發光二極體(LED),且黏附至該等凸塊之該第一材料包括與該等LED自對準之光學結構。
- 如請求項2之方法,其中該第一層包括電接觸該等LED之一電極之一導電層。
- 如請求項3之方法,其中該固化第二層係一全疏層。
- 如請求項2之方法,其中該第一材料包括一透明透鏡材料。
- 如請求項2之方法,其中該第一材料包括一漫射透鏡材料。
- 如請求項2之方法,其中該第一材料包括一黏結劑中之一波長轉換材料。
- 如請求項2之方法,其中該等LED具有引起該第一層中之該等凸塊之一頂部電極。
- 如請求項8之方法,其中該第一層包括形成一透明導體層之一金屬奈米線層。
- 如請求項1之方法,其中該第二層直接接觸該第一層。
- 如請求項1之方法,其中該第一材料直接接觸該第一層。
- 一種具有自對準特徵之結構,其包括:數個裝置,其等黏附至一基板,其中該等裝置隨機配置於該基板上;一第一層,其覆蓋該等裝置及該等裝置之間的區域,使得凸塊在該第一層中與該等裝置之位置重合;一第二層,其覆於該第一層上,該第二層不黏附至該等凸塊,使得 該第二層僅駐留於該等凸塊之間的區域中以導致該等凸塊之至少部分突出穿過該第二層;及一第一材料,其黏附至突出穿過該第二層之該等凸塊,其中該第二層上實質上不存在第一材料,使得該第一材料與該等裝置自對準。
- 如請求項12之結構,其中該等裝置係印刷於該基板上之發光二極體(LED),且黏附至該等凸塊之該第一材料包括與該等LED自對準之光學結構。
- 如請求項13之結構,其中該第一層包括電接觸該等LED之一電極之一導電層。
- 如請求項13之結構,其中該第一材料包括一透明透鏡材料。
- 如請求項13之結構,其中該第一材料包括一漫射透鏡材料。
- 如請求項13之結構,其中該第一材料包括一黏結劑中之一波長轉換材料。
- 如請求項13之結構,其中該等LED具有引起該第一層中之該等凸塊之一頂部電極。
- 如請求項13之結構,其中該第一層包括形成一透明導體層之一金屬 奈米線層。
- 如請求項13之結構,其進一步包括:一第一導體層,其電接觸該等LED之一底部電極;一介電層,其覆於該第一導體層上且介於該等LED之間;及該第一層,其係電接觸該等LED之一頂部電極之一第二導體層。
- 如請求項12之結構,其中該第二層沈積為一液體且藉由表面張力來芯吸該等凸塊以駐留於該等凸塊之間的該等區域中。
- 如請求項12之結構,其中該結構係一LED光片。
- 如請求項12之結構,其中該第二層直接接觸該第一層。
- 如請求項12之結構,其中該第一材料直接接觸該第一層。
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US16/003,432 US10355172B1 (en) | 2018-04-10 | 2018-06-08 | Self-alignment of optical structures to random array of printed micro-LEDs |
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CN114267777B (zh) * | 2021-12-17 | 2023-12-12 | Tcl华星光电技术有限公司 | 一种显示面板的制备方法、显示面板及显示装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105051932A (zh) * | 2013-01-17 | 2015-11-11 | 科迪华公司 | 高分辨率有机发光二极管器件 |
TWI520369B (zh) * | 2013-05-22 | 2016-02-01 | 法國電氣股份有限公司 | 光敏裝置的製造方法 |
US9368549B1 (en) * | 2015-09-02 | 2016-06-14 | Nthdegree Technologies Worldwide Inc. | Printed mesh defining pixel areas for printed inorganic LED dies |
US9433336B2 (en) * | 2010-12-07 | 2016-09-06 | Trustees Of Boston University | Self-cleaning solar panels and concentrators with transparent electrodynamic screens |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3571909B2 (ja) * | 1998-03-19 | 2004-09-29 | キヤノン株式会社 | 固体撮像装置及びその製造方法 |
KR100628233B1 (ko) * | 2004-12-30 | 2006-09-26 | 동부일렉트로닉스 주식회사 | 자동 배열된 마이크로렌즈를 갖는 이미지 센서 및 그 제조방법 |
JP4535053B2 (ja) * | 2006-10-12 | 2010-09-01 | ソニー株式会社 | 発光ダイオードの配線の形成方法、発光ダイオード実装基板、ディスプレイ、バックライト、照明装置および電子機器 |
US8852467B2 (en) | 2007-05-31 | 2014-10-07 | Nthdegree Technologies Worldwide Inc | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
US8415879B2 (en) * | 2007-05-31 | 2013-04-09 | Nthdegree Technologies Worldwide Inc | Diode for a printable composition |
US7932112B2 (en) * | 2008-04-14 | 2011-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US9484504B2 (en) * | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9657903B2 (en) * | 2013-08-20 | 2017-05-23 | Nthdegree Technologies Worldwide Inc. | Geometrical light extraction structures for printed LEDs |
TWI549330B (zh) * | 2014-06-04 | 2016-09-11 | 群創光電股份有限公司 | 有機發光二極體顯示器 |
KR102422246B1 (ko) * | 2015-07-30 | 2022-07-19 | 삼성전자주식회사 | 발광 소자 패키지 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9433336B2 (en) * | 2010-12-07 | 2016-09-06 | Trustees Of Boston University | Self-cleaning solar panels and concentrators with transparent electrodynamic screens |
CN105051932A (zh) * | 2013-01-17 | 2015-11-11 | 科迪华公司 | 高分辨率有机发光二极管器件 |
TWI520369B (zh) * | 2013-05-22 | 2016-02-01 | 法國電氣股份有限公司 | 光敏裝置的製造方法 |
US9368549B1 (en) * | 2015-09-02 | 2016-06-14 | Nthdegree Technologies Worldwide Inc. | Printed mesh defining pixel areas for printed inorganic LED dies |
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