TWI711308B - Output buffer - Google Patents
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Abstract
Description
本發明是有關於一種顯示裝置,且特別是有關於一種輸出緩衝器。The present invention relates to a display device, and particularly relates to an output buffer.
源極驅動器被用來驅動顯示面板的多條資料線(或稱源極線)。源極驅動器配置有多個驅動通道電路,這些驅動通道電路的每一個經由不同的輸出緩衝器去驅動這些資料線中的一條對應資料線。在源極驅動器中,輸出緩衝器可以將數位類比轉換器的類比電壓增益後輸出給顯示面板的資料線。隨著顯示面板的解析度以及/或是幀率(frame rate)越來越高,對一條掃描線的充電時間越來越短。為了要在短時間內對一個像素(pixel)進行驅動(充電或放電),輸出緩衝器須要足夠高的驅動能力。亦即,輸出緩衝器須要足夠高的迴轉率(slew rate)。The source driver is used to drive multiple data lines (or source lines) of the display panel. The source driver is configured with a plurality of drive channel circuits, and each of these drive channel circuits drives a corresponding one of the data lines through a different output buffer. In the source driver, the output buffer can gain the analog voltage of the digital-to-analog converter and output it to the data line of the display panel. As the resolution and/or frame rate of the display panel becomes higher and higher, the charging time for one scan line becomes shorter and shorter. In order to drive (charge or discharge) a pixel in a short time, the output buffer must have a sufficiently high drive capability. That is, the output buffer needs a sufficiently high slew rate.
一般而言,輸出緩衝器配置有開關電晶體。當開關電晶體為導通(turn on),輸出緩衝器可以輸出類比電壓給顯示面板的資料線,亦即此輸出緩衝器處於驅動期間。當開關電晶體為截止(turn off),輸出緩衝器便不輸出類比電壓給顯示面板的資料線,亦即此輸出緩衝器處於與高阻抗期間。習知的輸出緩衝器的開關電晶體因為基體效應(body effect)而具有不容忽視的導通電阻(Ron)。輸出緩衝器的導通電阻越大,則輸出緩衝器的迴轉率越小。Generally speaking, the output buffer is configured with switching transistors. When the switching transistor is turned on, the output buffer can output an analog voltage to the data line of the display panel, that is, the output buffer is in the driving period. When the switching transistor is turned off, the output buffer does not output analog voltage to the data line of the display panel, that is, the output buffer is in a high impedance period. The switching transistor of the conventional output buffer has an on-resistance (Ron) that cannot be ignored due to the body effect. The larger the on-resistance of the output buffer, the smaller the slew rate of the output buffer.
本發明提供一種輸出緩衝器,以降低開關電晶體的基體效應(body effect)。The present invention provides an output buffer to reduce the body effect of the switching transistor.
本發明的一實施例提供一種輸出緩衝器。所述輸出緩衝器包括放大器、開關電晶體以及第一切換電路。放大器的第一輸入端耦接至輸出緩衝器的輸入端,以接收輸入電壓。開關電晶體的控制端受控於控制訊號,其中該控制訊號至少定義驅動期間與高阻抗期間。開關電晶體的第一端耦接至放大器的輸出端。開關電晶體的第二端耦接至輸出緩衝器的輸出端,以提供輸出電壓給顯示面板的資料線。第一切換電路的共同端耦接至開關電晶體的基體。在驅動期間中,第一切換電路將開關電晶體的基體電性連接至開關電晶體的第一端或開關電晶體的第二端。在高阻抗期間中,第一切換電路將開關電晶體的基體電性連接至電源電壓。An embodiment of the present invention provides an output buffer. The output buffer includes an amplifier, a switching transistor, and a first switching circuit. The first input terminal of the amplifier is coupled to the input terminal of the output buffer to receive the input voltage. The control terminal of the switching transistor is controlled by a control signal, wherein the control signal at least defines a driving period and a high impedance period. The first terminal of the switching transistor is coupled to the output terminal of the amplifier. The second terminal of the switching transistor is coupled to the output terminal of the output buffer to provide an output voltage to the data line of the display panel. The common terminal of the first switching circuit is coupled to the base of the switching transistor. During the driving period, the first switching circuit electrically connects the base of the switching transistor to the first end of the switching transistor or the second end of the switching transistor. During the high impedance period, the first switching circuit electrically connects the base of the switching transistor to the power supply voltage.
本發明的一實施例提供一種輸出緩衝器。所述輸出緩衝器包括放大器、開關電晶體以及切換電路。放大器的第一輸入端耦接至輸出緩衝器的輸入端,以接收輸入電壓。開關電晶體的控制端受控於控制訊號,其中控制訊號至少定義驅動期間與高阻抗期間。開關電晶體的第一端耦接至放大器的輸出端。開關電晶體的第二端耦接至輸出緩衝器的輸出端,以提供輸出電壓給顯示面板的資料線。切換電路的共同端耦接至放大器的第二輸入端。在驅動期間中,切換電路將放大器的第二輸入端電性連接至開關電晶體的第二端或輸出焊墊,其中該輸出焊墊經由靜電放電電阻耦接至開關電晶體的第二端。在高阻抗期間中,切換電路將放大器的第二輸入端電性連接至放大器的輸出端。An embodiment of the present invention provides an output buffer. The output buffer includes an amplifier, a switching transistor, and a switching circuit. The first input terminal of the amplifier is coupled to the input terminal of the output buffer to receive the input voltage. The control terminal of the switching transistor is controlled by a control signal, wherein the control signal at least defines a driving period and a high impedance period. The first terminal of the switching transistor is coupled to the output terminal of the amplifier. The second terminal of the switching transistor is coupled to the output terminal of the output buffer to provide an output voltage to the data line of the display panel. The common terminal of the switching circuit is coupled to the second input terminal of the amplifier. During the driving period, the switching circuit electrically connects the second input terminal of the amplifier to the second terminal of the switching transistor or the output bonding pad, wherein the output bonding pad is coupled to the second terminal of the switching transistor via an electrostatic discharge resistor. During the high impedance period, the switching circuit electrically connects the second input terminal of the amplifier to the output terminal of the amplifier.
基於上述,本發明諸實施例所述輸出緩衝器可以在高阻抗期間中將開關電晶體的基體電性連接至電源電壓,以及在驅動期間中將開關電晶體的基體電性連接至開關電晶體的第一端(或第二端)。因此,所述輸出緩衝器可以降低開關電晶體的基體效應。由於降低了基體效應,使得開關電晶體的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器的迴轉率(slew rate)。Based on the above, the output buffers of the embodiments of the present invention can electrically connect the base of the switching transistor to the power supply voltage during the high impedance period, and electrically connect the base of the switching transistor to the switching transistor during the driving period. The first end (or second end). Therefore, the output buffer can reduce the matrix effect of the switching transistor. Due to the reduced matrix effect, the on-resistance (Ron) of the switching transistor can be effectively reduced, thereby increasing the slew rate of the output buffer.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
在本案說明書全文(包括申請專利範圍)中所使用的「耦接(或連接)」一詞可指任何直接或間接的連接手段。舉例而言,若文中描述第一裝置耦接(或連接)於第二裝置,則應該被解釋成該第一裝置可以直接連接於該第二裝置,或者該第一裝置可以透過其他裝置或某種連接手段而間接地連接至該第二裝置。另外,凡可能之處,在圖式及實施方式中使用相同標號的元件/構件/步驟代表相同或類似部分。不同實施例中使用相同標號或使用相同用語的元件/構件/步驟可以相互參照相關說明。The term "coupling (or connection)" used in the full description of the case (including the scope of the patent application) can refer to any direct or indirect connection means. For example, if the text describes that the first device is coupled (or connected) to the second device, it should be interpreted as that the first device can be directly connected to the second device, or the first device can be connected through other devices or some This kind of connection means is indirectly connected to the second device. In addition, wherever possible, elements/components/steps with the same reference numbers in the drawings and embodiments represent the same or similar parts. Elements/components/steps using the same reference numerals or using the same terms in different embodiments may refer to related descriptions.
圖1是依照本發明實施例說明一種顯示裝置100的電路方塊(circuit block)示意圖。圖1所示顯示裝置100包括閘極驅動器110、源極驅動器120以及顯示面板130。顯示面板130可以是任何類型的平面面板顯示器,例如液晶顯示面板、有機發光二極體顯示面板或是其他顯示面板。顯示面板130包含多條掃描線(或稱閘極線)、多條資料線(或稱源極線)與多個像素電路。例如圖1所示,所述多條掃描線包含n條掃描線SL_1、SL_2、…、SL_n,所述多條資料線包含m條資料線DL_1、DL_2、…、DL_m,以及所述多個像素電路包含m*n個像素電路P(1,1)、…、P(m,1)、…、P(1,n)、…、P(m,n),其中m與n可以是依照設計需求所決定的任何整數。FIG. 1 is a schematic diagram illustrating a circuit block of a
閘極驅動器110的多個輸出端以一對一方式耦接至顯示面板130的不同掃描線。閘極驅動器110可以掃描/驅動顯示面板130的每一條掃描線。閘極驅動器110可以是任何類型的閘極驅動器。例如,依照設計需求,閘極驅動器110可以是習知的閘極驅動器或是其他閘極驅動器。The multiple output terminals of the
源極驅動器120具有多個驅動通道電路,例如圖1所示m個驅動通道電路121_1、121_2、…、121_m。這些驅動通道電路121_1~121_m的輸出端以一對一方式耦接至顯示面板130的不同資料線。驅動通道電路121_1~121_m可以將數位的像素資料轉換為對應的輸出電壓(像素電壓),以及將這些輸出電壓分別輸出給顯示面板130的不同資料線。配合閘極驅動器110的掃描時序,源極驅動器120可以經由資料線DL_1~DL_m將這些輸出電壓寫入顯示面板130的對應像素電路中以顯示影像。The
圖2是依照本發明的一實施例說明圖1所示驅動通道電路121_1的電路方塊示意圖。圖1所示其他驅動通道電路121_2~121_m可以參照圖2所示驅動通道電路121_1的相關說明而類推,故不再贅述。圖2所示驅動通道電路121_1包括閂鎖器210、通道電路220以及輸出緩衝器230。閂鎖器210可以提供目前像素資料給通道電路220。閂鎖器210可以是任何類型的閂鎖器。例如,依照設計需求,閂鎖器210可以是習知的線閂鎖器或是其他閂鎖器。FIG. 2 is a circuit block diagram illustrating the driving channel circuit 121_1 shown in FIG. 1 according to an embodiment of the present invention. The other driving channel circuits 121_2 to 121_m shown in FIG. 1 can be deduced by referring to the related description of the driving channel circuit 121_1 shown in FIG. The driving channel circuit 121_1 shown in FIG. 2 includes a
通道電路220可以將目前像素資料轉換為類比電壓(以下稱為輸入電壓Vi),以及將輸入電壓Vi輸出給輸出緩衝器230。於圖2所示實施例中,通道電路220可以包括準位移位器(level shifter)221以及數位類比轉換器(digital to analog converter, DAC)222。準位移位器221可以調大目前像素資料的電壓擺幅(voltage swing),而數位類比轉換器222可以將目前像素資料轉換為輸入電壓Vi。數位類比轉換器222可以將輸入電壓Vi輸出給輸出緩衝器230。在其他實施例中,準位移位器221可能會因為設計需求而被省略,使得數位類比轉換器222可以直接從閂鎖器210接收目前像素資料。The
於圖2所示實施例中,輸出緩衝器230包括放大器231、開關電晶體232以及切換電路233。放大器231可以是任何類型的緩衝電路、放大電路或是增益電路。例如,依照設計需求,放大器231可以包括習知的運算放大器或是其他放大器。放大器231的第一輸入端(例如是非反相輸入端)耦接至輸出緩衝器230的輸入端(亦即耦接至數位類比轉換器222的輸出端),以接收輸入電壓Vi。放大器231的輸出端可以產生輸出電壓Vo。放大器231的輸出端耦接至放大器231的第二輸入端(例如是反相輸入端)。In the embodiment shown in FIG. 2, the
開關電晶體232的第一端(例如源極或汲極)耦接至放大器231的輸出端。開關電晶體232的第二端(例如汲極或源極)耦接至輸出緩衝器230的輸出端,以提供輸出電壓Vo給顯示面板130的資料線DL_1。開關電晶體232的控制端受控於控制訊號Sc1,其中控制訊號Sc1至少定義了一個驅動期間與一個高阻抗期間。高阻抗期間又可稱為HI-Z期間。在驅動期間中,開關電晶體232為導通。在高阻抗期間中,開關電晶體232為截止。The first terminal (for example, the source or the drain) of the switching
切換電路233的共同端耦接至開關電晶體232的基體(body,或稱bulk)。切換電路233的第一選擇端耦接至開關電晶體232的第二端。切換電路233的第二選擇端耦接至電源電壓。於圖2所示實施例中,開關電晶體232為P通道電晶體,例如是P通道金屬氧化物半導體(P-channel Metal-Oxide-Semiconductor, PMOS)電晶體。當開關電晶體232為P通道電晶體時,所述電源電壓可以是高於輸出電壓Vo的電壓擺幅(swing)的任何電壓(例如系統電壓VDDA)。The common terminal of the
在驅動期間中(開關電晶體232為導通的期間),切換電路233可以將開關電晶體232的基體電性連接至開關電晶體232的第二端。因此,所述輸出緩衝器230可以降低開關電晶體232的基體效應。由於降低了基體效應,使得開關電晶體232的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器230的迴轉率(slew rate)。在高阻抗期間中(開關電晶體232為截止的期間),切換電路233可以將開關電晶體232的基體電性連接至電源電壓(例如系統電壓VDDA),以確保開關電晶體232為截止。During the driving period (a period when the switching
在圖2所示實施例中,切換電路233包括開關SW1以及開關SW2。開關SW1的第一端耦接至開關電晶體232的基體。開關SW1的第二端耦接至開關電晶體232的第二端。開關SW2的第一端耦接至開關電晶體232的基體。開關SW2的第二端耦接至電源電壓(例如系統電壓VDDA)。在驅動期間中(開關電晶體232為導通的期間),開關SW1為導通,以及開關SW2為截止。在高阻抗期間中(開關電晶體232為截止的期間),開關SW1為截止,以及開關SW2為導通。In the embodiment shown in FIG. 2, the
圖3是依照本發明的另一實施例說明輸出緩衝器330的電路方塊示意圖。依照設計需求,圖3所示輸出緩衝器330可以被結合至圖2所示實施例(取代圖2所示輸出緩衝器230)。於圖3所示實施例中,輸出緩衝器330包括放大器231、開關電晶體232以及切換電路233。圖3所示放大器231、開關電晶體232以及切換電路233可以參照圖2所示放大器231、開關電晶體232以及切換電路233的相關說明來類推,故不再贅述。FIG. 3 is a circuit block diagram illustrating the
於圖3所示實施例中,切換電路233的第一選擇端耦接至開關電晶體232的第一端。亦即,開關SW1的第二端耦接至開關電晶體232的第一端。在驅動期間中(開關電晶體232為導通的期間),切換電路233可以將開關電晶體232的基體電性連接至開關電晶體232的第一端。因此,所述輸出緩衝器330可以降低開關電晶體232的基體效應。由於降低了基體效應,使得開關電晶體232的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器330的迴轉率(slew rate)。在高阻抗期間中(開關電晶體232為截止的期間),切換電路233可以將開關電晶體232的基體電性連接至電源電壓(例如系統電壓VDDA),以確保開關電晶體232為截止。In the embodiment shown in FIG. 3, the first selection terminal of the
圖4是依照本發明的又一實施例說明輸出緩衝器430的電路方塊示意圖。依照設計需求,圖4所示輸出緩衝器430可以被結合至圖2所示實施例(取代圖2所示輸出緩衝器230)。於圖4所示實施例中,輸出緩衝器430包括放大器231、開關電晶體234以及切換電路235。圖4所示放大器231、開關電晶體234以及切換電路235可以參照圖2所示放大器231、開關電晶體232以及切換電路233的相關說明來類推。FIG. 4 is a circuit block diagram illustrating the
於圖4所示實施例中,開關電晶體234的第一端(例如汲極或源極)耦接至放大器231的輸出端。開關電晶體234的第二端(例如源極或汲極)耦接至輸出緩衝器230的輸出端,以提供輸出電壓Vo給顯示面板130的資料線DL_1。開關電晶體234的控制端受控於控制訊號Sc2,其中控制訊號Sc2至少定義了一個驅動期間與一個高阻抗期間。高阻抗期間又可稱為HI-Z期間。在驅動期間中,開關電晶體234為導通。在高阻抗期間中,開關電晶體234為截止。In the embodiment shown in FIG. 4, the first terminal (for example, the drain or the source) of the switching
切換電路235的共同端耦接至開關電晶體234的基體。切換電路235的第一選擇端耦接至開關電晶體234的第二端。切換電路235的第二選擇端耦接至電源電壓。於圖4所示實施例中,開關電晶體234為N通道電晶體,例如是N通道金屬氧化物半導體(N-channel Metal-Oxide-Semiconductor, NMOS)電晶體。當開關電晶體234為N通道電晶體時,所述電源電壓可以是低於輸出電壓Vo的電壓擺幅的任何電壓(例如參考電壓VSSA,或是接地電壓)。The common terminal of the
在驅動期間中(開關電晶體234為導通的期間),切換電路235可以將開關電晶體234的基體電性連接至開關電晶體234的第二端。因此,所述輸出緩衝器430可以降低開關電晶體234的基體效應。由於降低了基體效應,使得開關電晶體234的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器430的迴轉率(slew rate)。在高阻抗期間中(開關電晶體234為截止的期間),切換電路235可以將開關電晶體234的基體電性連接至電源電壓(例如參考電壓VSSA),以確保開關電晶體234為截止。During the driving period (a period when the switching
在圖4所示實施例中,切換電路235包括開關SW3以及開關SW4。開關SW3的第一端耦接至開關電晶體234的基體。開關SW3的第二端耦接至開關電晶體234的第二端。開關SW4的第一端耦接至開關電晶體234的基體。開關SW4的第二端耦接至電源電壓(例如參考電壓VSSA)。在驅動期間中(開關電晶體234為導通的期間),開關SW3為導通,以及開關SW4為截止。在高阻抗期間中(開關電晶體234為截止的期間),開關SW3為截止,以及開關SW4為導通。In the embodiment shown in FIG. 4, the
圖5是依照本發明的另一實施例說明輸出緩衝器530的電路方塊示意圖。依照設計需求,圖5所示輸出緩衝器530可以被結合至圖2所示實施例(取代圖2所示輸出緩衝器230)。於圖5所示實施例中,輸出緩衝器530包括放大器231、開關電晶體234以及切換電路235。圖5所示放大器231、開關電晶體234以及切換電路235可以參照圖4所示放大器231、開關電晶體234以及切換電路235的相關說明來類推,故不再贅述。FIG. 5 is a circuit block diagram illustrating the
於圖5所示實施例中,切換電路235的第一選擇端耦接至開關電晶體234的第一端。亦即,開關SW3的第二端耦接至開關電晶體234的第一端。在驅動期間中(開關電晶體234為導通的期間),切換電路235可以將開關電晶體234的基體電性連接至開關電晶體234的第一端。因此,所述輸出緩衝器530可以降低開關電晶體234的基體效應。由於降低了基體效應,使得開關電晶體234的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器530的迴轉率(slew rate)。在高阻抗期間中(開關電晶體234為截止的期間),切換電路235可以將開關電晶體234的基體電性連接至電源電壓(例如參考電壓VSSA),以確保開關電晶體234為截止。In the embodiment shown in FIG. 5, the first selection terminal of the
圖6是依照本發明的再一實施例說明輸出緩衝器630的電路方塊示意圖。依照設計需求,圖6所示輸出緩衝器630可以被結合至圖2所示實施例(取代圖2所示輸出緩衝器230)。於圖6所示實施例中,輸出緩衝器630包括放大器231、開關電晶體236以及切換電路237。圖6所示放大器231可以參照圖2所示放大器231的相關說明。圖6所示開關電晶體236可以參照圖2或圖3所示開關電晶體232以及切換電路233的相關說明來類推,或者圖6所示開關電晶體236可以參照圖4或圖5所示開關電晶體234以及切換電路235的相關說明來類推,故不再贅述。在其他實施例中,依照設計需求,圖6所示開關電晶體236可以是任何開關元件/電路,例如習知的開關電晶體或是其他開關元件。FIG. 6 is a circuit block diagram illustrating the
開關電晶體236的第一端耦接至放大器231的輸出端。開關電晶體236的第二端經由靜電放電電阻ESDR耦接至輸出焊墊240。當開關電晶體236為導通時,放大器231的輸出電壓Vo可以經由開關電晶體236、靜電放電電阻ESDR、輸出焊墊240而被傳送至資料線DL_1。The first terminal of the switching
圖6所示切換電路237的共同端耦接至放大器231的第二輸入端。切換電路237的第一選擇端耦接至開關電晶體236的第二端。切換電路237的第二選擇端耦接至放大器231的輸出端。在驅動期間中(開關電晶體236為導通的期間),切換電路237將放大器231的第二輸入端電性連接至開關電晶體236的第二端。在高阻抗期間中(開關電晶體236為截止的期間),切換電路237將放大器231的第二輸入端電性連接至放大器231的輸出端。The common terminal of the
在圖6所示實施例中,切換電路237包括開關SW5以及開關SW6。開關SW5的第一端耦接至放大器231的第二輸入端。開關SW5的第二端耦接至開關電晶體236的第二端。開關SW6的第一端耦接至放大器231的第二輸入端。開關SW6的第二端耦接至放大器231的輸出端。在驅動期間中(開關電晶體236為導通的期間),開關SW5為導通,以及開關SW6為截止。在高阻抗期間中(開關電晶體236為截止的期間),開關SW5為截止,以及開關SW6為導通。In the embodiment shown in FIG. 6, the
圖7是依照本發明的更一實施例說明輸出緩衝器730的電路方塊示意圖。依照設計需求,圖7所示輸出緩衝器730可以被結合至圖2所示實施例(取代圖2所示輸出緩衝器230)。於圖7所示實施例中,輸出緩衝器730包括放大器231、開關電晶體236以及切換電路237。圖7所示放大器231、開關電晶體236以及切換電路237可以參照圖6所示放大器231、開關電晶體236以及切換電路237的相關說明來類推,故不再贅述。FIG. 7 is a circuit block diagram illustrating the
於圖7所示實施例中,切換電路237的第一選擇端經由靜電放電電阻ESDR’耦接至輸出焊墊240。亦即,開關SW5的第二端耦接至輸出焊墊240。輸出焊墊240經由靜電放電電阻ESDR耦接至開關電晶體236的第二端。在驅動期間中(開關電晶體236為導通的期間),切換電路237可以將放大器231的第二輸入端電性連接至焊墊240。在高阻抗期間中(開關電晶體236為截止的期間),切換電路237可以將放大器231的第二輸入端電性連接至放大器231的輸出端。In the embodiment shown in FIG. 7, the first selection terminal of the
綜上所述,本發明諸實施例所述輸出緩衝器可以在高阻抗期間中將開關電晶體的基體電性連接至電源電壓,以及在驅動期間中將開關電晶體的基體電性連接至開關電晶體的第一端(或第二端)。因此,所述輸出緩衝器可以降低開關電晶體的基體效應。由於降低了基體效應,使得開關電晶體的導通電阻(Ron)可以被有效地減少,進而提升輸出緩衝器的迴轉率(slew rate)。In summary, the output buffers described in the embodiments of the present invention can electrically connect the base of the switching transistor to the power supply voltage during the high impedance period, and electrically connect the base of the switching transistor to the switch during the driving period. The first end (or second end) of the transistor. Therefore, the output buffer can reduce the matrix effect of the switching transistor. Due to the reduced matrix effect, the on-resistance (Ron) of the switching transistor can be effectively reduced, thereby increasing the slew rate of the output buffer.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
100:顯示裝置
110:閘極驅動器
120:源極驅動器
121_1、121_2、121_m:驅動通道電路
130:顯示面板
210:閂鎖器
220:通道電路
221:準位移位器
222:數位類比轉換器
230、330、430、530、630、730:輸出緩衝器
231:放大器
232、234、236:開關電晶體
233、235、237:切換電路
240:輸出焊墊
DL_1、DL_2、DL_m:資料線
ESDR、ESDR’:靜電放電電阻
P(1,1)、P(m,1)、P(1,n)、P(m,n):像素電路
Sc1、Sc2:控制訊號
SL_1、SL_2、SL_n:掃描線
SW1、SW2、SW3、SW4、SW5、SW6:開關
VDDA:系統電壓
Vi:輸入電壓
Vo:輸出電壓
VSSA:參考電壓
100: display device
110: Gate driver
120: source driver
121_1, 121_2, 121_m: drive channel circuit
130: display panel
210: Latch
220: Channel circuit
221: Quasi-shifter
222: Digital to
圖1是依照本發明實施例說明一種顯示裝置的電路方塊(circuit block)示意圖。 圖2是依照本發明的一實施例說明圖1所示驅動通道電路的電路方塊示意圖。 圖3是依照本發明的另一實施例說明輸出緩衝器的電路方塊示意圖。 圖4是依照本發明的又一實施例說明輸出緩衝器的電路方塊示意圖。 圖5是依照本發明的另一實施例說明輸出緩衝器的電路方塊示意圖。 圖6是依照本發明的再一實施例說明輸出緩衝器的電路方塊示意圖。 圖7是依照本發明的更一實施例說明輸出緩衝器的電路方塊示意圖。 FIG. 1 is a schematic diagram illustrating a circuit block of a display device according to an embodiment of the present invention. FIG. 2 is a circuit block diagram illustrating the driving channel circuit shown in FIG. 1 according to an embodiment of the present invention. FIG. 3 is a schematic block diagram illustrating the circuit of the output buffer according to another embodiment of the present invention. FIG. 4 is a block diagram illustrating the circuit block diagram of the output buffer according to another embodiment of the present invention. FIG. 5 is a circuit block diagram illustrating the output buffer according to another embodiment of the invention. FIG. 6 is a circuit block diagram illustrating the output buffer according to still another embodiment of the present invention. FIG. 7 is a circuit block diagram illustrating the output buffer according to a further embodiment of the invention.
121_1:驅動通道電路 210:閂鎖器 220:通道電路 221:準位移位器 222:數位類比轉換器 230:輸出緩衝器 231:放大器 232:開關電晶體 233:切換電路 DL_1:資料線 Sc1:控制訊號 SW1、SW2:開關 VDDA:系統電壓 Vi:輸入電壓 Vo:輸出電壓 121_1: drive channel circuit 210: Latch 220: Channel circuit 221: Quasi-shifter 222: Digital to Analog Converter 230: output buffer 231: Amplifier 232: Switching transistor 233: Switching circuit DL_1: Data line Sc1: control signal SW1, SW2: switch VDDA: system voltage Vi: input voltage Vo: output voltage
Claims (10)
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Citations (2)
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TW200620229A (en) * | 2004-12-09 | 2006-06-16 | Samsung Electronics Co Ltd | Output buffer of a source driver in a liquid crystal display having a high slew rate and a method of controlling the output buffer |
TW201543454A (en) * | 2014-05-14 | 2015-11-16 | Himax Tech Ltd | Output buffer |
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TW200620229A (en) * | 2004-12-09 | 2006-06-16 | Samsung Electronics Co Ltd | Output buffer of a source driver in a liquid crystal display having a high slew rate and a method of controlling the output buffer |
US20110063200A1 (en) * | 2004-12-09 | 2011-03-17 | Chang-Ho An | Output buffer of a source driver in a liquid crystal display having a high slew rate and a method of controlling the output buffer |
TW201543454A (en) * | 2014-05-14 | 2015-11-16 | Himax Tech Ltd | Output buffer |
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