TWI711100B - Apparatus for measuring temperature of substrate and the method thereof - Google Patents
Apparatus for measuring temperature of substrate and the method thereof Download PDFInfo
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
- G01K1/146—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations arrangements for moving thermometers to or from a measuring position
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/16—Special arrangements for conducting heat from the object to the sensitive element
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
- G01K1/024—Means for indicating or recording specially adapted for thermometers for remote indication
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/14—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations
- G01K1/143—Supports; Fastening devices; Arrangements for mounting thermometers in particular locations for measuring surface temperatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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Abstract
Description
本發明涉及基板測量的技術領域,尤其涉及一種可以實時測量基板處理工序中的基板的溫度的基板溫度測量裝置及基板溫度測量方法。 The present invention relates to the technical field of substrate measurement, and in particular to a substrate temperature measurement device and a substrate temperature measurement method that can measure the temperature of a substrate in a substrate processing process in real time.
如今,作為用於實現半導體產品的大容量化及高性能化的方法,正適用半導體封裝技術。 Nowadays, semiconductor packaging technology is being applied as a method for achieving large-capacity and high-performance semiconductor products.
在此種半導體封裝工序中,形成將貼裝半導體的基板或彼此不同的半導體之間電連接的凸球(bumping ball)的工序稱為回流(Reflow)工序。 In such a semiconductor packaging process, the process of forming bumping balls that electrically connect the semiconductor-mounted substrate or the semiconductors different from each other is called a reflow process.
一般使用於回流工序的基板以硅膠(Si)材質構成。 The substrate generally used in the reflow process is made of silica gel (Si).
回流工序構成為在基板上加熱以使基板臨時滿足高溫狀態,並且回流工序在約240℃的高溫狀態下進行。 The reflow process is configured to heat the substrate to temporarily satisfy a high temperature state, and the reflow process is performed in a high temperature state of about 240°C.
回流工序經過基板的預熱、加熱及冷卻過程,並且根據進行各過程的時間及溫度變化速度等而決定基板的工序收率,從而正進行對此的多種研究。 The reflow process goes through the preheating, heating, and cooling processes of the substrate, and the process yield of the substrate is determined according to the time and temperature change rate of each process, and various researches are being conducted on this.
然而,根據現有技術,並不能直接測量正在進行回流工序的基板的溫度,而是通過測量支撐對象基板的加熱板的溫度而計算工序中的對象基板的溫度的方式測量對象基板的溫度。 However, according to the prior art, it is not possible to directly measure the temperature of the substrate undergoing the reflow process. Instead, the temperature of the target substrate in the process is calculated by measuring the temperature of the heating plate supporting the target substrate.
或者,準備與對象基板相同規格的溫度測量用基板,並在進行針對對象基板的回流工序之前,進行針對溫度測量用基板的回流工序,然後通過測量溫度測量用基板的溫度而推測工序中的對向基板的溫度而測量對象基板的溫度。 Alternatively, prepare a temperature measurement substrate with the same specifications as the target substrate, perform the reflow process for the temperature measurement substrate before performing the reflow process for the target substrate, and then estimate the temperature of the temperature measurement substrate by measuring the temperature of the temperature measurement substrate. The temperature of the target substrate is measured against the temperature of the substrate.
因此,在回流工序中實時正確地獲知對象基板的溫度,從而調整工序環境並確保收率的方面存在困難。 Therefore, it is difficult to accurately obtain the temperature of the target substrate in real time during the reflow process to adjust the process environment and ensure the yield.
並且,需要經過週期性地準備溫度測量用基板而測量溫度的過程,因此可能導致不必要的時間浪費及工序收率的降低。 In addition, it is necessary to periodically prepare the temperature measurement substrate to measure the temperature, which may lead to unnecessary waste of time and reduction in process yield.
作為根據如上所述的現有技術的基板溫度測量裝置的一例有韓國授權專利第10-0377417號。 As an example of a substrate temperature measuring device according to the prior art as described above, there is Korean Patent No. 10-0377417.
本發明為瞭解決上述的諸多而提出,其目的在於提供一種可以實時測量基板處理工序中的基板的溫度的基板溫度測量裝置及基板溫度測量方法。 The present invention is proposed in order to solve the above problems, and its object is to provide a substrate temperature measuring device and a substrate temperature measuring method that can measure the temperature of the substrate in the substrate processing process in real time.
並且,其目的在於提供一種不利用單獨的溫度測量用基板也可以實時測量進行基板處理工序的基板的溫度的基板溫度測量裝置及基板溫度測量方法。 In addition, its object is to provide a substrate temperature measurement device and a substrate temperature measurement method that can measure the temperature of a substrate in a substrate processing step in real time without using a separate temperature measurement substrate.
並且,其目的在於提供一種在進行基板處理工序的過程中,在基板的位置發生變動的情況下,可以維持對於基板的接觸,從而可以穩定地進行基板的實時溫度測量的基板溫度測量裝置及基板溫度測量方法。 In addition, its purpose is to provide a substrate temperature measuring device and a substrate that can maintain contact with the substrate when the position of the substrate changes during the substrate processing process, thereby stably performing real-time temperature measurement of the substrate Temperature measurement method.
並且,其目的在於提供一種維持腔室內部的密封狀態的基板溫度測量裝置及基板溫度測量方法。 In addition, its object is to provide a substrate temperature measuring device and a substrate temperature measuring method that maintain the sealed state of the inside of the chamber.
為達成上述目的與其他目的,本發明提供基板溫度測量裝置,其係包括:探頭罩,將支撐基板的基板支撐部上下貫通,並且形成為僅上端開放的管形態;支撐部件,朝所述探頭罩的內側突出;探頭,插入所述探頭罩的內部而上下移動,且下端插入所述支撐部件的內側,上端從所述基板支撐部的上表面突出,使得突出的所述上端相接於所述基板的下側面,從而測量所述基板的溫度;卡接部件,朝所述探頭的外側突出,並配備於所述支撐部件的上側;以及,彈性部件,下端被所述支撐部件的上端支撐,上端被所述卡接部件的下端支撐,從而彈性支撐所述探頭的上下移動。 In order to achieve the above and other objects, the present invention provides a substrate temperature measuring device, which includes: a probe cover that penetrates the substrate support portion supporting the substrate up and down and is formed into a tube shape with only the upper end open; a support member facing the probe The inside of the cover protrudes; the probe is inserted into the inside of the probe cover to move up and down, and the lower end is inserted into the inside of the support member, and the upper end protrudes from the upper surface of the substrate support part so that the protruding upper end is in contact with the The lower side surface of the substrate to measure the temperature of the substrate; a clamping member that protrudes toward the outside of the probe and is provided on the upper side of the support member; and an elastic member whose lower end is supported by the upper end of the support member , The upper end is supported by the lower end of the clamping part, thereby elastically supporting the up and down movement of the probe.
此時,在所述探頭的下端和所述探頭罩的下端之間形成有預定間距的線纜收容空間以設置連接於所述探頭的線纜,在所述探頭罩的下部一側配備有將所述探頭罩的內部和外部連通的線纜通道,從而使所述線纜通過所述線纜通道連接於外部,所述線纜通道以使所述線纜通過的狀態被密封。 At this time, a cable accommodating space with a predetermined pitch is formed between the lower end of the probe and the lower end of the probe cover to set the cables connected to the probe, and the lower side of the probe cover is equipped with A cable channel communicates between the inside and the outside of the probe cover, so that the cable is connected to the outside through the cable channel, and the cable channel is sealed in a state where the cable passes.
所述彈性部件可以由彈簧構成。 The elastic member may be composed of a spring.
並且,密封所述線纜可以通道的密封件以環氧樹脂材質構成。 In addition, the sealing member for sealing the cable channel is made of epoxy resin.
並且,所述探頭可以以如下方法設置:通過所述探頭罩上端的開放部插入後,以所述線纜通過所述線纜通道的狀態密封所述線纜通道而設置,並 且所述探頭構成為解除所述線纜通道的密封後通過所述探頭罩上端的開放部排出而被去除。 In addition, the probe may be installed in the following way: after being inserted through the open part of the upper end of the probe cover, the cable channel is sealed and installed in a state where the cable passes through the cable channel, and In addition, the probe is configured to release the sealing of the cable channel and then be discharged through an opening at the upper end of the probe cover to be removed.
並且,在所述基板支撐部的上側可以配備有相接於所述基板的下側面而支撐所述基板的至少一個支撐銷,所述探頭可以構成為,相比於所述至少一個支撐銷朝上側突出,並藉由從上側施加的壓力而下降至與所述至少一個支撐銷相同高度,若解除壓力,則使位置復原。 In addition, the upper side of the substrate support portion may be equipped with at least one support pin that is connected to the lower side surface of the substrate and supports the substrate, and the probe may be configured to face the at least one support pin compared to the at least one support pin. The upper side protrudes and is lowered to the same height as the at least one support pin by the pressure applied from the upper side, and the position is restored when the pressure is released.
並且,所述至少一個支撐銷可配備為貫通所述基板支撐部,所述探頭構成為上下貫通所述基板支撐部,並插入至上下貫通所述基板支撐部的管形態的探頭罩的內部,所述探頭罩可以構成為在所述基板支撐部的下側與所述至少一個支撐銷連接而同時進行升降移動。 In addition, the at least one support pin may be provided to penetrate the substrate support portion, and the probe may be configured to penetrate the substrate support portion up and down and be inserted into a tube-shaped probe cover that penetrates the substrate support portion up and down, The probe cover may be configured to be connected to the at least one support pin on the lower side of the substrate support portion while simultaneously moving up and down.
並且,所述至少一個支撐銷可以配備為沿所述基板支撐部的水平方向外側迂迴而從所述基板支撐部的上側連接至下側,所述探頭可以構成為上下貫通所述基板支撐部,並插入至上下貫通所述基板支撐部的管形態的探頭罩的內部,所述探頭罩可以構成為在所述基板支撐部的下側與所述至少一個支撐銷連接而同時進行升降移動。 In addition, the at least one support pin may be equipped to detour along the horizontal outer side of the substrate support portion to be connected from the upper side to the lower side of the substrate support portion, and the probe may be configured to penetrate the substrate support portion up and down, The probe cover is inserted into a tube-shaped probe cover that penetrates the substrate support part up and down, and the probe cover may be configured to be connected to the at least one support pin at the lower side of the substrate support part to simultaneously move up and down.
並且,所述探頭可以構成為,在進行所述基板處理工序的期間,測量所述基板的溫度至少一次,並傳送至外部設備。 In addition, the probe may be configured to measure the temperature of the substrate at least once during the substrate processing step, and transmit it to an external device.
並且,所述外部設備可以是將在所述探頭測量的所述基板的溫度可視化地示出的顯示設備。 In addition, the external device may be a display device that visually displays the temperature of the substrate measured by the probe.
並且,所述外部設備可以是當在所述探頭測量的所述基板的溫度具有特定值時發生警報的警報產生設備。 Also, the external device may be an alarm generating device that generates an alarm when the temperature of the substrate measured by the probe has a specific value.
並且,所述外部設備可以是控制對所述基板進行加熱或冷卻的溫度調節設備的控制部。 In addition, the external device may be a control unit that controls a temperature adjustment device that heats or cools the substrate.
為達成上述目的與其他目的,本發明提供基板溫度測量方法,係利用本發明的基板溫度測量裝置,基板溫度測量方法包括如下步驟a)通過所述探頭罩上端的開放部從上側朝下側方向將所述探頭插入所述探頭罩的內部,並且將一側連接於所述探頭的所述線纜的另一側端部通過所述線纜通道拉出至外部後,以所述線纜通過所述線纜通道的狀態密封所述線纜通道,從而將所述探頭設置於所述探頭罩內部;步驟b)使所述探頭的上端相接於所述基板的下側面而測量所述基板的溫度;以及,步驟c)解除所述線纜通道的密封後,將所述探頭朝上側方向拉起,來通過所述探頭罩上端的開放部將所述探頭從所述探頭罩的內部排出,從而解除所述探頭的設置。 In order to achieve the above and other objectives, the present invention provides a substrate temperature measurement method, which utilizes the substrate temperature measurement device of the present invention. The substrate temperature measurement method includes the following steps: The probe is inserted into the inside of the probe cover, and the other end of the cable connected to the probe on one side is pulled out through the cable channel to the outside, and then the cable is passed through The state of the cable channel seals the cable channel, so that the probe is arranged inside the probe cover; step b) connects the upper end of the probe to the lower side of the substrate to measure the substrate And, step c) after the sealing of the cable channel is released, the probe is pulled upward to discharge the probe from the inside of the probe cover through the opening at the upper end of the probe cover , Thereby canceling the setting of the probe.
並且,在步驟a)和步驟b)之間還可包括如下步驟:使在所述基板支撐部的上側相隔而設置的所述基板和所述基板支撐部之間的距離縮小,並且所述基板的下側面相接於所述探頭的上端;以及,以所述探頭和所述基板相接的狀態,使所述基板支撐部和所述基板之間的距離進一步縮小,並使所述基板安置於從所述基板支撐部的上表面突出的至少一個支撐銷的上端。 In addition, between step a) and step b), the following step may be further included: reducing the distance between the substrate and the substrate support portion provided at an upper side of the substrate support portion, and the substrate The lower side of the probe is connected to the upper end of the probe; and, with the probe and the substrate in contact, the distance between the substrate support portion and the substrate is further reduced, and the substrate is placed On the upper end of at least one support pin protruding from the upper surface of the substrate support portion.
並且,步驟b)可以是與針對所述基板的處理工序同時進行的步驟,並且在進行所述基板處理工序的過程中進行至少一次。 In addition, step b) may be a step performed simultaneously with the processing process for the substrate, and performed at least once during the substrate processing process.
並且,針對所述基板的處理工序可以是回流工序。 In addition, the processing step for the substrate may be a reflow step.
並且,所述探頭罩可以構成為藉由驅動部的驅動而與所述至少一個支撐銷同時進行升降移動,隨著所述探頭罩及所述至少一個支撐銷朝所述基板進行上升移動,所述基板支撐部和所述基板之間的距離縮小。 In addition, the probe cover may be configured to move up and down simultaneously with the at least one support pin by the driving of the driving portion, and as the probe cover and the at least one support pin move up and down toward the substrate, The distance between the substrate support portion and the substrate is reduced.
並且,在步驟b)和步驟c)之間還可包括如下步驟:在所述基板支撐部和所述基板之間的距離變大並且所述探頭和所述基板相接的狀態下,所述基板從所述至少一個支撐銷的上端分離;所述基板和所述基板支撐部之間的距離進一步變大,並且所述基板的下側面從所述探頭的上端分離。 In addition, between step b) and step c), the following step may be further included: in a state where the distance between the substrate support portion and the substrate becomes larger and the probe is in contact with the substrate, the The substrate is separated from the upper end of the at least one support pin; the distance between the substrate and the substrate supporting portion is further increased, and the lower side of the substrate is separated from the upper end of the probe.
並且,所述探頭罩可以構成為藉由驅動部的驅動與所述至少一個支撐銷同時進行升降移動,隨著所述探頭罩及所述至少一個支撐銷從所述基板進行下降移動,所述基板支撐部和所述基板之間的距離變大。 In addition, the probe cover may be configured to move up and down simultaneously with the at least one support pin by the driving of the driving portion, and as the probe cover and the at least one support pin move downward from the base plate, the The distance between the substrate support portion and the substrate becomes larger.
根據本發明的基板溫度測量裝置及基板溫度測量方法,可以實時測量進行基板處理工序的基板的溫度,因此可以實時地對應從而可降低不良發生率並提高收率。 According to the substrate temperature measuring device and the substrate temperature measuring method of the present invention, the temperature of the substrate undergoing the substrate processing process can be measured in real time, so it can respond in real time, thereby reducing the incidence of defects and improving the yield.
並且,不利用單獨的溫度測量用基板也可以實時測量進行基板處理工序的基板的溫度,從而可以減少不必要的時間浪費。 In addition, it is possible to measure the temperature of the substrate in the substrate processing process in real time without using a separate temperature measurement substrate, thereby reducing unnecessary waste of time.
並且,當進行基板處理工序時,在基板的位置發生變動的情況下,也可以維持對基板的接觸,從而可以穩定地進行基板的實時溫度的測量,從而可以降低不良發生率並提高收率。 In addition, when the substrate processing step is performed, even when the position of the substrate changes, contact with the substrate can be maintained, so that the real-time temperature of the substrate can be measured stably, thereby reducing the incidence of defects and improving the yield.
並且,使基板的安置過程由兩個步驟構成,以緩解衝擊,從而可防止基板的損傷。 In addition, the placement process of the substrate is composed of two steps to alleviate the impact, thereby preventing damage to the substrate.
並且,實時地測量進行基板處理工序的基板的溫度並傳送至顯示設備,從而可以實時地掌握基板的溫度而進行對應。 In addition, the temperature of the substrate on which the substrate processing step is performed is measured in real time and transmitted to the display device, so that the temperature of the substrate can be grasped in real time and corresponding.
並且,實時地測量進行基板處理工序的基板的溫度並傳送至警報產生設備,從而可以實時地掌握基板的狀態而進行對應。 In addition, the temperature of the substrate on which the substrate processing step is performed is measured in real time and transmitted to the alarm generating device, so that the state of the substrate can be grasped in real time and corresponding.
並且,實時地測量進行基板處理工序的基板的溫度並傳送至控制部,從而在控制部可以實時地掌握基板的溫度而調整。 In addition, the temperature of the substrate undergoing the substrate processing step is measured in real time and transmitted to the control unit, so that the control unit can grasp and adjust the temperature of the substrate in real time.
並且,在探頭的下端和探頭罩的下端之間確保了預定間距的線纜收容空間,從而當探頭升降移動時可以使線纜維持更穩定的狀態。 In addition, a cable accommodating space with a predetermined interval is ensured between the lower end of the probe and the lower end of the probe cover, so that the cable can be maintained in a more stable state when the probe moves up and down.
並且,探頭罩構成為只有上端開放的管形態,從而阻隔了腔室的內部和外部連通,從而可以防止外氣及外部顆粒對上述基板處理工序產生影響。 In addition, the probe cover is configured in a tube shape with only the upper end open, thereby blocking the communication between the inside and the outside of the chamber, thereby preventing external air and external particles from affecting the substrate processing process.
並且,提供了一種可以易於進行探頭的設置及更換的基板溫度測量裝置,從而可以提高使用者的便利性,並且構成為在維持所述基板溫度測量裝置的其他構成的同時,可以僅更換探頭,從而可以減少不必要的費用消耗。 In addition, a substrate temperature measuring device that can easily install and replace the probe is provided, thereby improving the convenience of the user, and is configured so that only the probe can be replaced while maintaining other configurations of the substrate temperature measuring device, This can reduce unnecessary costs.
W:基板 W: substrate
S:線纜收容空間 S: Cable containment space
100:腔室 100: chamber
110:基板支撐部 110: substrate support
111、112:支撐銷 111, 112: Support pin
112-1:上端 112-1: upper end
200、200-1:基板溫度測量裝置 200, 200-1: substrate temperature measuring device
210:基板溫度測量裝置上端 210: The upper end of the substrate temperature measuring device
220:探頭 220: Probe
230:探頭罩 230: Probe cover
221:卡接部件 221: Card connection parts
231:支撐部件 231: Supporting parts
232:探頭罩下端 232: Lower end of probe cover
240:彈性部件 240: elastic parts
250:線纜通道 250: cable channel
270:線纜 270: Cable
300:外部設備 300: external equipment
S10-S70:方法步驟 S10-S70: Method steps
圖1是本發明的第一實施例的基板溫度測量裝置的基板支撐部安置基板示意圖。 FIG. 1 is a schematic diagram of a substrate placed on a substrate supporting part of a substrate temperature measuring device according to a first embodiment of the present invention.
圖2是本發明的第一實施例的基板溫度測量裝置的基板支撐部安置基板的另一實施例的示意圖。 2 is a schematic diagram of another embodiment of the substrate supporting part of the substrate temperature measuring device according to the first embodiment of the present invention.
圖3是說明本發明的第一實施例的基板溫度測量裝置的操作示意圖。 3 is a schematic diagram illustrating the operation of the substrate temperature measuring device of the first embodiment of the present invention.
圖4是說明本發明的第二實施例的基板溫度測量裝置的操作示意圖。 4 is a schematic diagram illustrating the operation of the substrate temperature measuring device of the second embodiment of the present invention.
圖5是本發明一實施例的基板溫度測量方法的流程示意圖。 5 is a schematic flowchart of a method for measuring substrate temperature according to an embodiment of the present invention.
以下,參照附圖針對根據本發明的基板處理裝置的構成及作用進行詳細的如下說明。 Hereinafter, the structure and function of the substrate processing apparatus according to the present invention will be described in detail below with reference to the drawings.
在此,省略針對在現有技術中所說明的內容及重復的內容的說明,以本發明中新添加的構成要素為中心進行說明。 Here, the description of the content described in the prior art and the overlapping content will be omitted, and the description will focus on the newly added components in the present invention.
針對根據本發明的基板溫度測量裝置200的第一實施例進行敘述。
The first embodiment of the substrate
如圖1所示,根據本發明的基板溫度測量裝置200包括探頭220,配備為將支撐基板W而進行基板處理工序的基板支撐部110上下貫通,且基板溫度測量裝置200的上端210從所述基板支撐部110的上表面突出,其中,所述探頭220的上端構成為相接於所述基板W的下側面,從而測量所述基板W的溫度。
As shown in FIG. 1, the substrate
所述基板W可以是成為半導體基板的晶圓,並且可以是在一個集成電路中構成高集成化的單晶片系統(SoC:System On Chip)的環氧樹脂模塑料(EMC:Epoxy Molding Compound)晶片。然而,本發明並非局限於此,所述基板W可以是如液晶顯示器(LCD:liquid crystal display)、等離子顯示面板(PDP:plasma display panel)的使用為平板顯示裝置用的玻璃等的透明基板。所述基板W形狀及尺寸並非由本發明的附圖而限定,實際上可具有圓形及四角形板等多種形狀和尺寸。 The substrate W may be a wafer that becomes a semiconductor substrate, and may be an epoxy molding compound (EMC: Epoxy Molding Compound) wafer that constitutes a highly integrated system on chip (SoC: System On Chip) in an integrated circuit . However, the present invention is not limited to this, and the substrate W may be a transparent substrate such as a liquid crystal display (LCD: liquid crystal display) and a plasma display panel (PDP: plasma display panel) using glass for flat panel display devices. The shape and size of the substrate W are not limited by the drawings of the present invention, and may actually have a variety of shapes and sizes such as circular and quadrangular plates.
所述基板處理工序在基板處理用腔室100進行,基板處理用腔室100內部形成有將所述基板W收容而處理的基板處理空間。
The substrate processing step is performed in the
所述基板處理工序可以是回流(Reflow)工序,並且所述腔室100可以是回流工序用腔室。
The substrate processing process may be a reflow process, and the
所述腔室100提供適合於所述基板處理工序的基板處理環境,為此以具有預定厚度且較高剛性的材質構成。
The
作為一例,所述腔室100以用於承受溫度和壓力變化的具有較高的耐熱性及耐壓性的材質構成,且以具有耐化學性及耐蝕性的材質構成,以使不會反應於在所述基板處理工序中利用的工序流體而發生變質或腐蝕,從而並不會對所述基板W的處理工序產生影響。
As an example, the
滿足上述條件的材質有不鏽鋼(SUS)。不鏽鋼具有剛性較高,耐熱性、耐蝕性、耐化學性優異,並且可及性較好而且較為經濟的優點,因此是構成所述腔室時利用最多的材質中的一種。 The material that meets the above conditions is stainless steel (SUS). Stainless steel has the advantages of high rigidity, excellent heat resistance, corrosion resistance, and chemical resistance, and good accessibility and is more economical. Therefore, it is one of the most used materials when forming the chamber.
所述基板支撐部110可配備於所述腔室100,可以由埋設有加熱所述基板W的加熱器或冷卻所述基板W的冷卻水線路的基座構成。
The
所述基板支撐部110配備有至少一個支撐銷111,所述支撐銷111從所述基板支撐部110的上表面突出並相接於所述基板W的下側面以支撐所述基板W。
The
所述基板支撐部110及所述至少一個支撐銷111可根據所述基板W的尺寸及形狀而配備為多種形態。
The
所述至少一個支撐銷111配備為沿上下貫通所述基板支撐部110,並且可構成為藉由驅動部(未圖示)的驅動而沿上下升降移動。
The at least one supporting
所述至少一個支撐銷111的升降移動通過以下方式實現:在當針對所述腔室100引入或引出所述基板W時,在移送所述基板W的移送單元(未圖示)和所述至少一個支撐銷111之間移交基板W。
The lifting movement of the at least one
在所述至少一個支撐銷111配備為多個的情況下,可以構成為在所述基板支撐部110的下側彼此連接,並同時升降移動而維持同一高度,從而可以構成為使所述基板W穩定地安置。
In the case where the at least one
本發明的基板溫度測量裝置200還可包括管形態的探頭罩230。
The substrate
所述探頭罩230可構成為在內側插入所述探頭220的形態,並配備為沿上下貫通所述基板支撐部110。
The
據此,若從所述基板支撐部110的上側施加壓力,則所述探頭220將在所述探頭罩230內部沿上下升降移動。
Accordingly, if pressure is applied from the upper side of the
所述探頭罩230的內側可配備有沿上下方向彈性支撐所述探頭220的彈性部件240。
The inner side of the
隨著從所述探頭220的上側施加壓力而使所述探頭220下降,所述彈性部件240被壓縮,若解除壓力,則由復原力而膨脹,從而使所述探頭220上升以使位置復原。
As pressure is applied from the upper side of the
所述彈性部件240可以由具有預定的彈性係數的彈簧構成。
The
並且,所述探頭罩230構成為在所述基板支撐部110的下側與所述至少一個支撐銷111彼此連接,從而使所述至少一個支撐銷111及所述探頭罩230藉由所述驅動部的驅動而同時升降移動。
In addition, the
據此,所述探頭220與所述探頭罩230一同升降移動,且將隨著從所述探頭220的上側施加的壓力而獨立地升降移動。
Accordingly, the
圖1是示出所述基板W被引入至所述腔室100之後安置於所述至少一個支撐銷111及所述探頭220的情形的圖。
FIG. 1 is a diagram showing a situation where the substrate W is placed on the at least one
圖1的(a)是示出所述基板W藉由所述移送單元被引入所述腔室100而位於所述至少一個支撐銷111及所述探頭220的上側的狀態的圖,且示出對所述至少一個支撐銷111及所述探頭220未施加有意義的壓力的待機狀態。
FIG. 1(a) is a diagram showing a state in which the substrate W is introduced into the
此時,所述基板溫度測量裝置200配備為所述探頭220的上端210相比於所述至少一個支撐銷111,朝上側突出。
At this time, the substrate
圖1的(b)示出了如下狀態:所述至少一個支撐銷111及所述探頭罩230朝所述基板W上升移動,以從所述移送單元接收所述基板W,從而使所述基板W藉由所述至少一個支撐銷111及所述探頭220而被支撐的支撐狀態。
Fig. 1(b) shows a state in which the at least one
所述至少一個支撐銷111的上端相接於所述基板W的下側面而支撐所述基板W為止,所述至少一個支撐銷111及所述探頭罩230將維持上升移動。
Until the upper end of the at least one
此時,所述探頭220的上端配備為相比於所述至少一個支撐銷111朝上側突出,因此所述探頭220的上端相比於所述至少一個支撐銷111將提前相接於所述基板W的下側面。
At this time, the upper end of the
因此,直到所述至少一個支撐銷111相接於所述基板W的下側面為止,所述探頭220在維持相接於所述基板W的下側面的狀態下,相對於所述探頭罩230下降。
Therefore, until the at least one
即,隨著從所述探頭220的上側施加藉由所述基板W的重量的壓力,所述探頭220相對於所述探頭罩230下降而使所述彈性部件240被壓縮。
That is, as the pressure by the weight of the substrate W is applied from the upper side of the
直到所述至少一個支撐銷111相接於所述基板W的下側面為止,從所述探頭220的上側施加的藉由所述基板W的重量的壓力將增加,並且直到所述探頭220和所述至少一個支撐銷111位於同一高度為止,所述探頭220持續進行相對於所述探頭罩230的下降。
Until the at least one
所述探頭220相對於所述探頭罩230的升降範圍藉由所述彈性部件240的彈性係數而決定,因此根據所述基板W的重量及所述探頭罩230和所述
探頭220的長度等變數,配備具有適當的彈性係數的彈性部件,從而可以調整所述探頭220的升降範圍。
The lifting range of the
若所述基板W穩定地安置於所述至少一個支撐銷111及所述探頭220,則所述移送單元將解除對所述基板W的支撐,並引出至所述腔室100的外部。
If the substrate W is stably placed on the at least one
隨後,在所述腔室100內部進行對於所述基板W的基板處理工序。
Subsequently, a substrate processing process for the substrate W is performed inside the
完成所述基板處理工序後,解除所述至少一個支撐銷111及所述探頭220的所述支撐狀態,且所述基板W移交至所述移送單元,從而引出至所述腔室100的外部。
After the substrate processing process is completed, the supporting state of the at least one
所述至少一個支撐銷111及所述探頭220的支撐狀態解除過程將以在所述圖1的(a)和所述圖1的(b)中所說明的過程的倒序進行。
The process of releasing the support state of the at least one
據此,首先被引入所述腔室100的所述移送單元支撐所述基板W,隨後所述至少一個支撐銷111及所述探頭罩230下降移動而解除對所述基板W的支撐,從而返回至上述圖1的(a)的待機狀態。
According to this, the transfer unit introduced into the
此時,所述彈性部件240隨著藉由所述基板W的重量的壓力解除,藉由復原力而膨脹,從而逐漸復原為所述待機狀態的形態,據此,所述探頭220將相對於所述探頭罩230上升,從而返回至相比於所述至少一個支撐銷111朝上側突出的所述待機狀態。
At this time, the
並且,如圖2所示,所述至少一個支撐銷111可以是如下的迂迴型支撐銷112:配備為不貫通所述基板支撐部110而沿所述基板支撐部110的水平方向外側迂迴的形態。
And, as shown in FIG. 2, the at least one
圖2的(a)示出所述至少一個迂迴型支撐銷112及所述探頭220的待機狀態,圖2的(b)示出所述基板W藉由所述至少一個迂迴型支撐銷112及所述探頭220而被支撐的支撐狀態。
Fig. 2(a) shows the standby state of the at least one
所述至少一個迂迴型支撐銷112可以配備為上端從所述基板支撐部110的水平方向的周圍外側朝向內側延伸的形態。
The at least one
此時,所述至少一個迂迴型支撐銷112的上端的末端112-1在所述基板支撐部110的上側相接於所述基板W的下側面而支撐所述基板W。
At this time, the end 112-1 of the upper end of the at least one
圖3是用於詳細說明根據本發明的第一實施例的所述基板溫度測量裝置200的構成的圖,圖3的(a)中圖示有在所述圖1的(a)及所述圖2的(a)中示出的所述待機狀態的所述基板溫度測量裝置200,圖3的(b)中圖示有在圖1的(b)及所述圖2的(b)中示出的所述支撐狀態的所述基板溫度測量裝置200。
FIG. 3 is a diagram for explaining in detail the structure of the substrate
所述基板溫度測量裝置200可配備有朝所述探頭220的外側突出的卡接部件221和朝所述探頭罩230的內側突出的支撐部件231,並且所述彈性部件240可構成為在所述卡接部件221和所述支撐部件231之間所配備。
The substrate
如圖3的(a)和圖3的(b)所示,根據本發明的第一實施例的所述基板溫度測量裝置200包括從所述探頭罩230朝內側方向突出的支撐部件231和從所述探頭220朝外側方向突出的卡接部件221而構成。
3(a) and 3(b), the substrate
所述探頭220從所述探頭罩230的上側插入所述探頭罩230的內部。
The
所述支撐部件231形成為圍繞所述探頭的外側周圍,從而配備為插入所述探頭罩230的所述探頭220的下端插入所述支撐部件231的內側。
The support member 231 is formed to surround the outer periphery of the probe, so that the lower end of the
所述支撐部件231可構成為朝所述探頭罩230的內側方向突出的環狀的突出部,並且可以構成為沿所述探頭罩231的內側面周圍突出的至少一個突出部。
The supporting member 231 may be configured as a ring-shaped protrusion that protrudes toward the inner side of the
所述卡接部件221配備為在所述探頭220插入所述支撐部件231的內側的狀態下位於所述支撐部件231的垂直方向上側。
The clamping
所述卡接部件221可構成為朝所述探頭220的外側方向突出的環狀的突出部,可構成為沿所述探頭罩230的內側面周圍突出的至少一個突出部。
The clamping
此時,所述支撐部件231和所述卡接部件221形成為彼此上下對應的構成,從而構成為在所述探頭220下降的情況下,使所述卡接部件221的下端卡接於所述支撐部件231的上端。
At this time, the supporting member 231 and the clamping
並且,所述彈性部件240配備於所述支撐部件231和所述卡接部件221之間,從而構成為使所述彈性部件240的上端被所述卡接部件221的下端所支撐,並使所述彈性部件240的下端被所述支撐部件231的上端所支撐,從而朝上下方向彈性支撐所述探頭220。
In addition, the
即,根據基於本發明的第一實施例的所述基板溫度測量裝置200,所述探頭220藉由所述彈性部件240的彈性力及復原力而升降移動,同時所述探頭220的垂直方向位置被限制為所述卡接部件221的下端相比於所述支撐部件231的上端位於上側的高度。
That is, according to the substrate
據此,在升降移動的所述探頭220的下端和所述探頭罩230的下端之間,確保了設置連接於所述探頭220的線纜270的預定間距的線纜收容空間S。所述線纜270連接於所述探頭220的下端,從而可最小化隨著所述探頭220的升降移動而使所述線纜270所受的影響。
Accordingly, between the lower end of the
所述線纜收容空間S是不會受到所述彈性部件240的伸縮運動及所述探頭220的升降移動的影響的空間,因此在所述線纜收容空間S收容所述線纜270的延伸部分,從而可以防止所述線纜270藉由所述彈性部件240的伸縮運動及所述探頭220的升降移動而交錯或磨損而發生損傷,並可以維持穩定的狀態。
The cable accommodating space S is a space that will not be affected by the expansion and contraction movement of the
此時,所述支撐部件231配備於從所述探頭220的下端隔開預定間距的高度,從而進一步更寬地形成所述線纜收容空間S,從而能夠更穩定地設置所述線纜270。
At this time, the supporting member 231 is provided at a height separated by a predetermined interval from the lower end of the
並且,在所述探頭罩230的下部一側形成有使內部和外部連通的線纜通道250,以使所述線纜270從所述線纜收容空間S通過所述線纜通道250連接於外部的電源(未圖示)或外部設備300。
In addition, a
即,所述線纜構成為一側連接於所述探頭220,並且朝所述探頭220的下側延伸而被所述探頭罩230的下端所支撐,而且通過所述線纜通道250朝與所述探頭220的升降移動方向垂直的方向延伸而與外部連接,從而可以最小化所述線纜270由於所述探頭220的升降移動而受的影響。
That is, the cable is configured to be connected to the
所述探頭220可構成為在進行所述基板處理工序的期間將所述基板W的溫度至少測量一次以上,並且可構成為將測量的溫度信息傳送至所述外部設備300。
The
所述外部設備300可以是將從所述探頭220測量的所述基板W的溫度可視化地顯示的顯示設備,通過此,使用者可以實時地獲知進行所述基板處理工序的所述基板W的溫度而進行對應。
The
並且,所述外部設備300可以是當從所述探頭220測量的所述基板W的溫度具有特定值時發出警報的警報產生設備,通過此,使用者可以實時地獲知進行所述基板處理工序的所述基板W的狀態而進行對應。
In addition, the
並且,所述外部設備300可以是控制對所述基板W進行加熱或冷卻的溫度調整設備(未圖示)的控制部,所述控制部可以構成為根據從所述探頭220測量的所述基板W的溫度而實時地進行對應。
In addition, the
即,構成為實時測量進行所述基板處理工序的所述基板W的溫度而對應,從而可以降低不良發生率並提高收率。 That is, it is configured to measure the temperature of the substrate W in which the substrate processing step is performed in real time and respond, thereby reducing the occurrence rate of defects and improving the yield.
並且,不利用單獨的溫度測量用基板而實時測量進行所述基板處理工序的所述基板W的溫度,從而可以減少不必要的時間浪費。 In addition, the temperature of the substrate W during the substrate processing step is measured in real time without using a separate temperature measurement substrate, so that unnecessary waste of time can be reduced.
並且,隨著進行所述基板處理工序,在所述腔室100內部可發生壓力變化或氣流,據此所述基板W的位置可沿上下方向變動。
In addition, as the substrate processing step is performed, a pressure change or air flow may occur inside the
此時,所述基板W的上下方向位置變動意味著從所述探頭220的上側施加的壓力的增減,並且所述探針220可構成為隨著壓力的增減而上升或下降並維持接觸於所述基板W的下側面的狀態。
At this time, the vertical position fluctuation of the substrate W means the increase or decrease of the pressure applied from the upper side of the
即,在進行所述基板處理工序的過程中,發生所述基板W的位置變動的情況下,也可以穩定地進行所述基板W的實時溫度測量,從而可以對降低不良發生率並提高收率做出貢獻。 That is, when the position of the substrate W changes during the substrate processing step, the real-time temperature measurement of the substrate W can be stably performed, which can reduce the incidence of defects and increase the yield. make a contribution.
參照圖4,針對本發明的基板溫度測量裝置的第二實施例進行說明。 4, the second embodiment of the substrate temperature measuring device of the present invention will be described.
根據本發明的第二實施例的基板溫度測量裝置200-1遵循所述第一實施例的構成,並且與第一實施例的構成的差異為彈性部件240配備於探頭220和探頭罩230的下端232之間。
The substrate temperature measuring device 200-1 according to the second embodiment of the present invention follows the configuration of the first embodiment, and the difference from the configuration of the first embodiment is that the
本第三實施例的基板溫度測量裝置200-1的構成為對所述第一實施例的所述探頭罩230和所述探頭220的結構進行簡化的構成,其優點在於能夠降低製造成本並使管理更為容易。
The structure of the substrate temperature measuring device 200-1 of the third embodiment is a simplified structure of the
參照圖5,針對利用根據本發明的基板溫度測量裝置的基板溫度測量方法進行說明。 Referring to FIG. 5, a method for measuring substrate temperature using the substrate temperature measuring device according to the present invention will be described.
步驟S10是基板W被引入至腔室100的步驟。
Step S10 is a step in which the substrate W is introduced into the
所述基板W藉由移送單元(未圖示)而引入至所述腔室100,並位於支撐所述基板W的基板支撐部110的上側。
The substrate W is introduced into the
在所述基板支撐部110配備有從上表面突出的至少一個支撐銷111及探頭220,並且所述探頭220可配備為貫通所述基板支撐部110。
The
所述探頭220在本步驟S10之前插入所述探頭罩230,以設置於所述探頭罩230內部。
The
此時,所述探頭220以如下方式設置:將所述探頭220通過所述探頭罩230上端的開放部從上側朝下側方向插入,並且將一側連接於所述探頭的線纜270的另一側端部通過線纜通道250拿出至外部後,以所述線纜270通過所述線纜通道250的狀態密封所述線纜通道250,而且通過所述線纜270的另一側端部連接於電源等外部設備300。
At this time, the
所述至少一個支撐銷111及所述探頭罩230在所述基板支撐部110的下側彼此連接,從而可以藉由驅動部(未圖示)的驅動而同時上下移動。
The at least one supporting
此時,所述探頭220以相比於所述至少一個支撐銷111朝上側突出的狀態配備,可構成為與藉由所述驅動部的驅動的移動無關地,藉由從所述探頭220的上側施加的壓力在所述探頭罩230內部上下移動。
At this time, the
步驟S20是使所述基板支撐部110和所述基板W之間的距離縮小的步驟。
Step S20 is a step of reducing the distance between the
本步驟中,所述基板W可以以藉由所述移送單元而被支撐的狀態維持位置,並可以構成為所述至少一個支撐銷111及所述探頭罩230藉由所述驅動部的驅動而上升移動,從而使所述基板W和所述基板支撐部110之間的距離縮小。
In this step, the substrate W can maintain its position in a state of being supported by the transfer unit, and can be configured such that the at least one
步驟S30是所述基板W的下側面相接於所述探頭220的上端的步驟。
Step S30 is a step in which the lower side of the substrate W is connected to the upper end of the
如所述步驟S10中所述,所述探頭220以相比於所述至少一個支撐銷111朝上側突出的狀態配備,因此所述基板W的下側面比所述至少一個支撐銷111先接觸於所述探頭220的上端。
As described in the step S10, the
所述至少一個支撐銷111及所述探頭罩230以所述探頭220與所述基板相接的狀態維持上升移動而縮小所述基板W和所述基板支撐部110之間的距離,此時藉由所述基板W的重量而朝所述探頭220的上側施加壓力,以使所述探頭220在所述探頭罩230內部相對地下降。
The at least one
步驟S40是使所述基板W的下側面相接於所述至少一個支撐銷111的上端而被安置的步驟,所述至少一個支撐銷111及所述探頭罩230的上升移動中止而使所述至少一個支撐銷111的高度固定。
Step S40 is a step of placing the lower side surface of the substrate W in contact with the upper end of the at least one
據此,所述基板W的垂直方向位置固定為所述至少一個支撐銷111的高度,因此所述探頭罩230內部的所述探頭220也將具有與所述至少一個支撐銷111相同的高度。
Accordingly, the vertical position of the substrate W is fixed to the height of the at least one
即,所述探頭220藉由從上側時間的壓力而從相比於所述至少一個支撐銷111朝上側突出的高度下降至與所述至少一個支撐銷111相同的高度。
That is, the
此時,在所述探頭220和所述探頭罩230之間可配備有具有上下方向的復原力的彈性部件240。
At this time, between the
據此,若從所述探頭220的上側施加壓力,則所述彈性部件240將被壓縮,從而使所述探頭220下降,並且若解除壓力,則所述彈性部件240藉由復原力而膨脹,從而使所述探頭220上升。
Accordingly, if pressure is applied from the upper side of the
步驟S50是測量所述基板W的溫度的步驟。 Step S50 is a step of measuring the temperature of the substrate W.
本步驟S50可以在進行對所述基板W的基板處理工序的同時實現,並且在進行所述基板處理工序的過程中可進行至少一次。 This step S50 may be implemented at the same time as the substrate processing process for the substrate W is performed, and may be performed at least once during the substrate processing process.
即,實時測量進行所述基板處理工序的所述基板W的溫度而對應,從而可降低不良發生率並提高收率。 That is, by measuring the temperature of the substrate W on which the substrate processing step is performed in real time and responding, it is possible to reduce the incidence of defects and increase the yield.
並且,不利用單獨的溫度測量用基板也可以實時測量進行所述基板處理工序的所述基板W的溫度,從而可以減少不必要的時間浪費。 In addition, the temperature of the substrate W during the substrate processing step can be measured in real time without using a separate temperature measurement substrate, so that unnecessary time waste can be reduced.
並且,隨著進行所述基板處理工序,在所述腔室100內部可發生壓力變化或氣流,並據此所述基板W的位置可沿上下方向變動。
In addition, as the substrate processing step is performed, a pressure change or air flow may occur inside the
此時,所述基板W的上下方向的位置變動意味著從所述探頭220的上側施加的壓力的增減,並且所述探針220可構成為隨著壓力的增減而上升或下降並維持接觸於所述基板W的下側面的狀態。
At this time, the position fluctuation of the substrate W in the vertical direction means the increase or decrease of the pressure applied from the upper side of the
即,在進行所述基板處理工序的過程中,在所述基板W的位置發生變動的情況下,也可以穩定地進行所述基板W的實時溫度測量,從而可以對降低不良發生率並提高收率做出貢獻。 That is, when the position of the substrate W changes during the substrate processing step, the real-time temperature measurement of the substrate W can be stably performed, which can reduce the incidence of defects and increase the yield. Rate to contribute.
所述基板處理工序可以是回流工序。 The substrate processing step may be a reflow step.
步驟S60是所述基板支撐部110和所述基板W之間的距離變遠的步驟,步驟S70是所述基板W藉由所述移送單元從所述腔室100被引出的步驟。
Step S60 is a step in which the distance between the
若所述基板處理工序結束,則所述移送單元被引入所述腔室100,並且所述至少一個支撐銷111及所述探頭罩230藉由所述驅動部的驅動而下降移動,並將所述基板W移交至所述移送單元。
When the substrate processing step is completed, the transfer unit is introduced into the
隨著所述至少一個支撐銷111及所述探頭罩230下降移動,所述基板W第一次從所述至少一個支撐銷111分離,並在預定區間內以相接於所述探頭220的狀態遠離所述基板支撐部110,而且所述探頭220的位置藉由所述彈性部件240的復原力而完全復原後將第二次從所述探頭220分離。
As the at least one
在進行本步驟S70之後,所述探頭220從所述探頭罩230排出而解除設置。
After this step S70 is performed, the
此時,所述探頭220以如下方法解除設置:將所述線纜270的另一側端部從電源等外部設備300分離,並在解除所述線纜通道250的密封之後,將所述探頭220朝上側方向拉起,以通過所述探頭罩230上端的開放部從所述探頭罩230排出。
At this time, the
即,根據本發明,可以將所述探頭220簡單地設置並去除,並且密封所述線纜通道250,從而可提高所述腔室100內部的基板處理空間的氣密性,並且可以防止所述基板W在所述基板處理工序中發生不良。
That is, according to the present invention, the
密封所述線纜通道的密封件以環氧樹脂材質構成。 The seal for sealing the cable channel is made of epoxy resin.
並且,如上所述,所述探頭220的設置及解除在所述基板處理工序的前後進行,然而無需在各個工序前後始終進行,而是當需要更換所述探頭220時進行。
Moreover, as described above, the setting and release of the
如上所述,根據本發明的基板溫度測量裝置及基板溫度測量方法,可以實時測量進行基板處理工序的基板W的溫度而對應,從而可降低不良發生率並提高收率。 As described above, according to the substrate temperature measuring device and the substrate temperature measuring method of the present invention, the temperature of the substrate W undergoing the substrate processing process can be measured in real time to respond, thereby reducing the incidence of defects and improving the yield.
並且,不利用單獨的溫度測量用基板也可以實時測量進行所述基板處理工序的所述基板W的溫度,從而降低不必要的時間浪費。 In addition, the temperature of the substrate W during the substrate processing step can be measured in real time without using a separate temperature measurement substrate, thereby reducing unnecessary waste of time.
並且,當進行所述基板處理工序時,在所述基板W的位置發生變動的情況下,也可以維持對所述基板W的接觸,以使所述基板W的實時溫度測量穩定地進行,從而可以降低不良發生率並提高收率。 In addition, when the substrate processing step is performed, when the position of the substrate W is changed, the contact with the substrate W can be maintained so that the real-time temperature measurement of the substrate W can be performed stably, thereby Can reduce the incidence of defects and increase the yield.
並且,使所述基板W的安置過程由以下兩個步驟構成:首先相接於探頭220之後再接觸於至少一個支撐銷111,以緩解衝擊,從而可防止基板的損傷。
In addition, the placement process of the substrate W is composed of the following two steps: firstly, contact with the
並且,實時地測量進行基板處理工序的所述基板W的溫度並傳送至顯示設備,從而可以實時地掌握所述基板W的溫度而進行對應。 In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to the display device, so that the temperature of the substrate W can be grasped in real time and corresponding.
並且,實時地測量進行所述基板處理工序的所述基板W的溫度並傳送至警報產生設備,從而可以實時地掌握所述基板W的狀態而對應。 In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to an alarm generating device, so that the state of the substrate W can be grasped in real time and responded.
並且,實時地測量進行所述基板處理工序的所述基板W的溫度並傳送至控制部,從而在控制部可以實時地掌握所述基板W的溫度而進行調整。 In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to the control unit, so that the control unit can grasp the temperature of the substrate W in real time and adjust it.
並且,在所述探頭220的下端和所述探頭罩230的下端232之間確保了預定間距的線纜收容空間,從而當所述探頭220升降移動時可以使線纜170維持更穩定的狀態。
Moreover, a cable accommodating space with a predetermined interval is ensured between the lower end of the
並且,所述探頭罩230構成為只有上端開放的管形態,從而阻隔了所述腔室100的內部和外部連通,以使可以防止外氣及外部顆粒對所述基板處理工序產生影響。
In addition, the
並且,提供了一種可以易於進行所述探頭220的設置及更換的基板溫度測量裝置,從而可以提高使用者的便利性,並且構成為在維持所述基板溫度測量裝置的其他構成的同時,可以僅更換所述探頭220,從而可以減少不必要的費用消耗。
In addition, a substrate temperature measuring device that can easily install and replace the
本發明並不局限於上述實施例,在申請專利範圍中請求的保護範圍和本發明的詳細的說明及附圖的範圍內,在不脫離本發明的技術思想的情況下,本發明所屬的技術領域中具備基本知識的人員可實現顯而易見的變形實施,這些變形實施屬於本發明的範圍內。 The present invention is not limited to the above-mentioned embodiments. The scope of protection claimed in the scope of the patent application and the detailed description of the present invention and the scope of the drawings, without departing from the technical idea of the present invention, the technology to which the present invention belongs Persons with basic knowledge in the field can realize obvious variant implementations, and these variant implementations fall within the scope of the present invention.
W:基板 W: substrate
100:腔室 100: chamber
110:基板支撐部 110: substrate support
111:支撐銷 111: Support pin
200:基板溫度測量裝置 200: substrate temperature measuring device
210:基板溫度測量裝置上端 210: The upper end of the substrate temperature measuring device
220:探頭 220: Probe
230:探頭罩 230: Probe cover
240:彈性部件 240: elastic parts
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CN112687568B (en) * | 2020-12-23 | 2024-07-23 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
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CN111089659B (en) | 2021-11-23 |
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