TWI711100B - Apparatus for measuring temperature of substrate and the method thereof - Google Patents

Abstract

The present invention discloses an apparatus for measuring temperature of substrate and the method thereof. More specifically, it is an object of the invention to provide the apparatus for measuring temperature of substrate and the method thereof in a substrate processing step in real time. The apparatus for measuring temperature of substrate according to the present invention for achieving the above object includes a probe that is provided to vertically penetrate a substrate supporting portion that performs a substrate processing process by supporting a substrate, and an upper end that protrudes from an upper surface of the substrate supporting portion, wherein the upper end of the probe is configured to be in contact with a lower side of the substrate to measure the temperature of the substrate.

Description

Substrate temperature measuring device and substrate temperature measuring method

The present invention relates to the technical field of substrate measurement, and in particular to a substrate temperature measurement device and a substrate temperature measurement method that can measure the temperature of a substrate in a substrate processing process in real time.

Nowadays, semiconductor packaging technology is being applied as a method for achieving large-capacity and high-performance semiconductor products.

In such a semiconductor packaging process, the process of forming bumping balls that electrically connect the semiconductor-mounted substrate or the semiconductors different from each other is called a reflow process.

The substrate generally used in the reflow process is made of silica gel (Si).

The reflow process is configured to heat the substrate to temporarily satisfy a high temperature state, and the reflow process is performed in a high temperature state of about 240°C.

The reflow process goes through the preheating, heating, and cooling processes of the substrate, and the process yield of the substrate is determined according to the time and temperature change rate of each process, and various researches are being conducted on this.

However, according to the prior art, it is not possible to directly measure the temperature of the substrate undergoing the reflow process. Instead, the temperature of the target substrate in the process is calculated by measuring the temperature of the heating plate supporting the target substrate.

Alternatively, prepare a temperature measurement substrate with the same specifications as the target substrate, perform the reflow process for the temperature measurement substrate before performing the reflow process for the target substrate, and then estimate the temperature of the temperature measurement substrate by measuring the temperature of the temperature measurement substrate. The temperature of the target substrate is measured against the temperature of the substrate.

Therefore, it is difficult to accurately obtain the temperature of the target substrate in real time during the reflow process to adjust the process environment and ensure the yield.

In addition, it is necessary to periodically prepare the temperature measurement substrate to measure the temperature, which may lead to unnecessary waste of time and reduction in process yield.

As an example of a substrate temperature measuring device according to the prior art as described above, there is Korean Patent No. 10-0377417.

The present invention is proposed in order to solve the above problems, and its object is to provide a substrate temperature measuring device and a substrate temperature measuring method that can measure the temperature of the substrate in the substrate processing process in real time.

In addition, its object is to provide a substrate temperature measurement device and a substrate temperature measurement method that can measure the temperature of a substrate in a substrate processing step in real time without using a separate temperature measurement substrate.

In addition, its purpose is to provide a substrate temperature measuring device and a substrate that can maintain contact with the substrate when the position of the substrate changes during the substrate processing process, thereby stably performing real-time temperature measurement of the substrate Temperature measurement method.

In addition, its object is to provide a substrate temperature measuring device and a substrate temperature measuring method that maintain the sealed state of the inside of the chamber.

In order to achieve the above and other objects, the present invention provides a substrate temperature measuring device, which includes: a probe cover that penetrates the substrate support portion supporting the substrate up and down and is formed into a tube shape with only the upper end open; a support member facing the probe The inside of the cover protrudes; the probe is inserted into the inside of the probe cover to move up and down, and the lower end is inserted into the inside of the support member, and the upper end protrudes from the upper surface of the substrate support part so that the protruding upper end is in contact with the The lower side surface of the substrate to measure the temperature of the substrate; a clamping member that protrudes toward the outside of the probe and is provided on the upper side of the support member; and an elastic member whose lower end is supported by the upper end of the support member , The upper end is supported by the lower end of the clamping part, thereby elastically supporting the up and down movement of the probe.

At this time, a cable accommodating space with a predetermined pitch is formed between the lower end of the probe and the lower end of the probe cover to set the cables connected to the probe, and the lower side of the probe cover is equipped with A cable channel communicates between the inside and the outside of the probe cover, so that the cable is connected to the outside through the cable channel, and the cable channel is sealed in a state where the cable passes.

The elastic member may be composed of a spring.

In addition, the sealing member for sealing the cable channel is made of epoxy resin.

In addition, the probe may be installed in the following way: after being inserted through the open part of the upper end of the probe cover, the cable channel is sealed and installed in a state where the cable passes through the cable channel, and In addition, the probe is configured to release the sealing of the cable channel and then be discharged through an opening at the upper end of the probe cover to be removed.

In addition, the upper side of the substrate support portion may be equipped with at least one support pin that is connected to the lower side surface of the substrate and supports the substrate, and the probe may be configured to face the at least one support pin compared to the at least one support pin. The upper side protrudes and is lowered to the same height as the at least one support pin by the pressure applied from the upper side, and the position is restored when the pressure is released.

In addition, the at least one support pin may be provided to penetrate the substrate support portion, and the probe may be configured to penetrate the substrate support portion up and down and be inserted into a tube-shaped probe cover that penetrates the substrate support portion up and down, The probe cover may be configured to be connected to the at least one support pin on the lower side of the substrate support portion while simultaneously moving up and down.

In addition, the at least one support pin may be equipped to detour along the horizontal outer side of the substrate support portion to be connected from the upper side to the lower side of the substrate support portion, and the probe may be configured to penetrate the substrate support portion up and down, The probe cover is inserted into a tube-shaped probe cover that penetrates the substrate support part up and down, and the probe cover may be configured to be connected to the at least one support pin at the lower side of the substrate support part to simultaneously move up and down.

In addition, the probe may be configured to measure the temperature of the substrate at least once during the substrate processing step, and transmit it to an external device.

In addition, the external device may be a display device that visually displays the temperature of the substrate measured by the probe.

Also, the external device may be an alarm generating device that generates an alarm when the temperature of the substrate measured by the probe has a specific value.

In addition, the external device may be a control unit that controls a temperature adjustment device that heats or cools the substrate.

In order to achieve the above and other objectives, the present invention provides a substrate temperature measurement method, which utilizes the substrate temperature measurement device of the present invention. The substrate temperature measurement method includes the following steps: The probe is inserted into the inside of the probe cover, and the other end of the cable connected to the probe on one side is pulled out through the cable channel to the outside, and then the cable is passed through The state of the cable channel seals the cable channel, so that the probe is arranged inside the probe cover; step b) connects the upper end of the probe to the lower side of the substrate to measure the substrate And, step c) after the sealing of the cable channel is released, the probe is pulled upward to discharge the probe from the inside of the probe cover through the opening at the upper end of the probe cover , Thereby canceling the setting of the probe.

In addition, between step a) and step b), the following step may be further included: reducing the distance between the substrate and the substrate support portion provided at an upper side of the substrate support portion, and the substrate The lower side of the probe is connected to the upper end of the probe; and, with the probe and the substrate in contact, the distance between the substrate support portion and the substrate is further reduced, and the substrate is placed On the upper end of at least one support pin protruding from the upper surface of the substrate support portion.

In addition, step b) may be a step performed simultaneously with the processing process for the substrate, and performed at least once during the substrate processing process.

In addition, the processing step for the substrate may be a reflow step.

In addition, the probe cover may be configured to move up and down simultaneously with the at least one support pin by the driving of the driving portion, and as the probe cover and the at least one support pin move up and down toward the substrate, The distance between the substrate support portion and the substrate is reduced.

In addition, between step b) and step c), the following step may be further included: in a state where the distance between the substrate support portion and the substrate becomes larger and the probe is in contact with the substrate, the The substrate is separated from the upper end of the at least one support pin; the distance between the substrate and the substrate supporting portion is further increased, and the lower side of the substrate is separated from the upper end of the probe.

In addition, the probe cover may be configured to move up and down simultaneously with the at least one support pin by the driving of the driving portion, and as the probe cover and the at least one support pin move downward from the base plate, the The distance between the substrate support portion and the substrate becomes larger.

According to the substrate temperature measuring device and the substrate temperature measuring method of the present invention, the temperature of the substrate undergoing the substrate processing process can be measured in real time, so it can respond in real time, thereby reducing the incidence of defects and improving the yield.

In addition, it is possible to measure the temperature of the substrate in the substrate processing process in real time without using a separate temperature measurement substrate, thereby reducing unnecessary waste of time.

In addition, when the substrate processing step is performed, even when the position of the substrate changes, contact with the substrate can be maintained, so that the real-time temperature of the substrate can be measured stably, thereby reducing the incidence of defects and improving the yield.

In addition, the placement process of the substrate is composed of two steps to alleviate the impact, thereby preventing damage to the substrate.

In addition, the temperature of the substrate on which the substrate processing step is performed is measured in real time and transmitted to the display device, so that the temperature of the substrate can be grasped in real time and corresponding.

In addition, the temperature of the substrate on which the substrate processing step is performed is measured in real time and transmitted to the alarm generating device, so that the state of the substrate can be grasped in real time and corresponding.

In addition, the temperature of the substrate undergoing the substrate processing step is measured in real time and transmitted to the control unit, so that the control unit can grasp and adjust the temperature of the substrate in real time.

In addition, a cable accommodating space with a predetermined interval is ensured between the lower end of the probe and the lower end of the probe cover, so that the cable can be maintained in a more stable state when the probe moves up and down.

In addition, the probe cover is configured in a tube shape with only the upper end open, thereby blocking the communication between the inside and the outside of the chamber, thereby preventing external air and external particles from affecting the substrate processing process.

In addition, a substrate temperature measuring device that can easily install and replace the probe is provided, thereby improving the convenience of the user, and is configured so that only the probe can be replaced while maintaining other configurations of the substrate temperature measuring device, This can reduce unnecessary costs.

W: substrate

S: Cable containment space

100: chamber

110: substrate support

111, 112: Support pin

112-1: upper end

200, 200-1: substrate temperature measuring device

210: The upper end of the substrate temperature measuring device

220: Probe

230: Probe cover

221: Card connection parts

231: Supporting parts

232: Lower end of probe cover

240: elastic parts

250: cable channel

270: Cable

300: external equipment

S10-S70: Method steps

FIG. 1 is a schematic diagram of a substrate placed on a substrate supporting part of a substrate temperature measuring device according to a first embodiment of the present invention.

2 is a schematic diagram of another embodiment of the substrate supporting part of the substrate temperature measuring device according to the first embodiment of the present invention.

3 is a schematic diagram illustrating the operation of the substrate temperature measuring device of the first embodiment of the present invention.

4 is a schematic diagram illustrating the operation of the substrate temperature measuring device of the second embodiment of the present invention.

5 is a schematic flowchart of a method for measuring substrate temperature according to an embodiment of the present invention.

Hereinafter, the structure and function of the substrate processing apparatus according to the present invention will be described in detail below with reference to the drawings.

Here, the description of the content described in the prior art and the overlapping content will be omitted, and the description will focus on the newly added components in the present invention.

The first embodiment of the substrate temperature measuring device 200 according to the present invention will be described.

As shown in FIG. 1, the substrate temperature measurement device 200 according to the present invention includes a probe 220, which is equipped to pass through the substrate support portion 110 for supporting the substrate W for substrate processing. The upper end 210 of the substrate temperature measurement device 200 The upper surface of the substrate support portion 110 protrudes, wherein the upper end of the probe 220 is configured to be in contact with the lower side of the substrate W, so as to measure the temperature of the substrate W.

The substrate W may be a wafer that becomes a semiconductor substrate, and may be an epoxy molding compound (EMC: Epoxy Molding Compound) wafer that constitutes a highly integrated system on chip (SoC: System On Chip) in an integrated circuit . However, the present invention is not limited to this, and the substrate W may be a transparent substrate such as a liquid crystal display (LCD: liquid crystal display) and a plasma display panel (PDP: plasma display panel) using glass for flat panel display devices. The shape and size of the substrate W are not limited by the drawings of the present invention, and may actually have a variety of shapes and sizes such as circular and quadrangular plates.

The substrate processing step is performed in the substrate processing chamber 100, and a substrate processing space in which the substrate W is accommodated and processed is formed in the substrate processing chamber 100.

The substrate processing process may be a reflow process, and the chamber 100 may be a chamber for a reflow process.

The chamber 100 provides a substrate processing environment suitable for the substrate processing process, and for this purpose, it is made of a material with a predetermined thickness and relatively high rigidity.

As an example, the chamber 100 is made of a material with high heat resistance and pressure resistance that is used to withstand temperature and pressure changes, and is made of a material with chemical resistance and corrosion resistance so as not to react with The process fluid used in the substrate processing process is altered or corroded, so that it does not affect the processing process of the substrate W.

The material that meets the above conditions is stainless steel (SUS). Stainless steel has the advantages of high rigidity, excellent heat resistance, corrosion resistance, and chemical resistance, and good accessibility and is more economical. Therefore, it is one of the most used materials when forming the chamber.

The substrate support portion 110 may be provided in the chamber 100, and may be composed of a susceptor embedded with a heater for heating the substrate W or a cooling water circuit for cooling the substrate W.

The substrate support portion 110 is equipped with at least one support pin 111 that protrudes from the upper surface of the substrate support portion 110 and contacts the lower side surface of the substrate W to support the substrate W.

The substrate support portion 110 and the at least one support pin 111 can be equipped in various forms according to the size and shape of the substrate W.

The at least one supporting pin 111 is equipped to penetrate the substrate supporting portion 110 up and down, and may be configured to be driven up and down by a driving portion (not shown).

The lifting movement of the at least one support pin 111 is realized by the following manner: when the substrate W is introduced or drawn into the chamber 100, a transfer unit (not shown) that transfers the substrate W and the at least The substrate W is transferred between a supporting pin 111.

In the case where the at least one support pin 111 is provided in plural, it may be configured to be connected to each other on the lower side of the substrate support portion 110 and move up and down at the same time to maintain the same height, so that it may be configured to make the substrate W Stable placement.

The substrate temperature measuring device 200 of the present invention may further include a probe cover 230 in the form of a tube.

The probe cover 230 may be configured to insert the probe 220 inside, and may be provided to penetrate the substrate support portion 110 vertically.

Accordingly, if pressure is applied from the upper side of the substrate support portion 110, the probe 220 will move up and down inside the probe cover 230.

The inner side of the probe cover 230 may be equipped with an elastic member 240 that elastically supports the probe 220 in the vertical direction.

As pressure is applied from the upper side of the probe 220 to lower the probe 220, the elastic member 240 is compressed, and when the pressure is released, the probe 220 is expanded by restoring force, and the probe 220 is raised to restore the position.

The elastic member 240 may be composed of a spring having a predetermined elastic coefficient.

In addition, the probe cover 230 is configured to be connected to the at least one support pin 111 on the lower side of the substrate support portion 110, so that the at least one support pin 111 and the probe cover 230 are driven by the drive The part is driven while moving up and down.

Accordingly, the probe 220 moves up and down together with the probe cover 230, and will move up and down independently with the pressure applied from the upper side of the probe 220.

FIG. 1 is a diagram showing a situation where the substrate W is placed on the at least one support pin 111 and the probe 220 after being introduced into the chamber 100.

FIG. 1(a) is a diagram showing a state in which the substrate W is introduced into the chamber 100 by the transfer unit and is positioned on the upper side of the at least one support pin 111 and the probe 220, and shows A standby state where no meaningful pressure is applied to the at least one support pin 111 and the probe 220.

At this time, the substrate temperature measuring device 200 is equipped so that the upper end 210 of the probe 220 protrudes toward the upper side compared to the at least one support pin 111.

Fig. 1(b) shows a state in which the at least one support pin 111 and the probe cover 230 move up and move toward the substrate W to receive the substrate W from the transfer unit, so that the substrate W is a supported state supported by the at least one supporting pin 111 and the probe 220.

Until the upper end of the at least one support pin 111 is connected to the lower side surface of the substrate W and supports the substrate W, the at least one support pin 111 and the probe cover 230 will maintain upward movement.

At this time, the upper end of the probe 220 is configured to protrude upward compared to the at least one support pin 111, so the upper end of the probe 220 will be connected to the substrate earlier than the at least one support pin 111 The underside of W.

Therefore, until the at least one support pin 111 contacts the lower side surface of the substrate W, the probe 220 is lowered relative to the probe cover 230 while maintaining the contact with the lower side surface of the substrate W. .

That is, as the pressure by the weight of the substrate W is applied from the upper side of the probe 220, the probe 220 is lowered with respect to the probe cover 230, and the elastic member 240 is compressed.

Until the at least one support pin 111 meets the lower side of the substrate W, the pressure applied from the upper side of the probe 220 by the weight of the substrate W will increase, and until the probe 220 and the Until the at least one supporting pin 111 is located at the same height, the probe 220 continues to descend relative to the probe cover 230.

The lifting range of the probe 220 relative to the probe cover 230 is determined by the elastic coefficient of the elastic member 240, so it is based on the weight of the substrate W and the probe cover 230 and the Variables such as the length of the probe 220 are equipped with elastic components with appropriate elastic coefficients, so that the lifting range of the probe 220 can be adjusted.

If the substrate W is stably placed on the at least one support pin 111 and the probe 220, the transfer unit will release the support of the substrate W and lead out to the outside of the chamber 100.

Subsequently, a substrate processing process for the substrate W is performed inside the chamber 100.

After the substrate processing process is completed, the supporting state of the at least one support pin 111 and the probe 220 is released, and the substrate W is transferred to the transfer unit, thereby being drawn out of the chamber 100.

The process of releasing the support state of the at least one support pin 111 and the probe 220 will be performed in the reverse order of the process described in (a) and (b) of FIG. 1.

According to this, the transfer unit introduced into the chamber 100 first supports the substrate W, and then the at least one support pin 111 and the probe cover 230 move down to release the support for the substrate W, thereby returning To the standby state of Fig. 1 (a) above.

At this time, the elastic member 240 expands by the restoring force as the pressure by the weight of the substrate W is released, thereby gradually returning to the standby state. According to this, the probe 220 will be opposite to The probe cover 230 rises to return to the standby state in which the at least one support pin 111 protrudes upward.

And, as shown in FIG. 2, the at least one support pin 111 may be a detour type support pin 112 that does not penetrate through the substrate support portion 110, but does not penetrate the substrate support portion 110, but is in a form of winding along the outer side of the substrate support portion 110 in the horizontal direction .

Fig. 2(a) shows the standby state of the at least one circuitous support pin 112 and the probe 220, and Fig. 2(b) shows the substrate W through the at least one circuitous support pin 112 and The probe 220 is supported in a supported state.

The at least one roundabout support pin 112 may be provided in a form in which the upper end extends from the outer side to the inner side of the periphery of the substrate support portion 110 in the horizontal direction.

At this time, the end 112-1 of the upper end of the at least one roundabout support pin 112 is in contact with the lower side of the substrate W on the upper side of the substrate support portion 110 to support the substrate W.

FIG. 3 is a diagram for explaining in detail the structure of the substrate temperature measuring device 200 according to the first embodiment of the present invention, and FIG. 3(a) shows that in FIG. 1(a) and the The substrate temperature measuring device 200 in the standby state shown in FIG. 2(a) is shown in FIG. 1(b) and FIG. 2(b) as shown in FIG. 3(b) The substrate temperature measuring device 200 is shown in the supporting state.

The substrate temperature measuring device 200 may be equipped with a clamping member 221 protruding toward the outer side of the probe 220 and a supporting member 231 protruding toward the inner side of the probe cover 230, and the elastic member 240 may be configured to The clamping member 221 and the supporting member 231 are provided between.

3(a) and 3(b), the substrate temperature measuring device 200 according to the first embodiment of the present invention includes a supporting member 231 protruding from the probe cover 230 in the inner direction and The probe 220 is constituted by a clamping member 221 that protrudes outward.

The probe 220 is inserted into the inside of the probe cover 230 from the upper side of the probe cover 230.

The support member 231 is formed to surround the outer periphery of the probe, so that the lower end of the probe 220 equipped to be inserted into the probe cover 230 is inserted into the inner side of the support member 231.

The supporting member 231 may be configured as a ring-shaped protrusion that protrudes toward the inner side of the probe cover 230, and may be configured as at least one protrusion that protrudes around the inner surface of the probe cover 231.

The clamping member 221 is equipped to be located on the upper side in the vertical direction of the supporting member 231 in a state where the probe 220 is inserted into the inner side of the supporting member 231.

The clamping member 221 may be configured as a ring-shaped protrusion that protrudes toward the outer side of the probe 220, and may be configured as at least one protrusion that protrudes along the inner surface of the probe cover 230.

At this time, the supporting member 231 and the clamping member 221 are formed into a structure corresponding to each other up and down, so that when the probe 220 is lowered, the lower end of the clamping member 221 is clamped to the The upper end of the support member 231.

In addition, the elastic member 240 is provided between the supporting member 231 and the clamping member 221, so that the upper end of the elastic member 240 is supported by the lower end of the clamping member 221, and the The lower end of the elastic member 240 is supported by the upper end of the supporting member 231 so as to elastically support the probe 220 in the vertical direction.

That is, according to the substrate temperature measuring device 200 based on the first embodiment of the present invention, the probe 220 moves up and down by the elastic force and restoring force of the elastic member 240, and the vertical position of the probe 220 It is limited to a height where the lower end of the clamping member 221 is located on the upper side compared to the upper end of the supporting member 231.

Accordingly, between the lower end of the probe 220 that moves up and down and the lower end of the probe cover 230, a cable accommodating space S with a predetermined pitch is provided for the cables 270 connected to the probe 220. The cable 270 is connected to the lower end of the probe 220 so as to minimize the influence of the cable 270 on the rise and fall of the probe 220.

The cable accommodating space S is a space that will not be affected by the expansion and contraction movement of the elastic member 240 and the lifting movement of the probe 220, so the extension of the cable 270 is accommodated in the cable accommodating space S Therefore, the cable 270 can be prevented from being damaged due to interlacing or abrasion due to the expansion and contraction movement of the elastic member 240 and the lifting movement of the probe 220, and a stable state can be maintained.

At this time, the supporting member 231 is provided at a height separated by a predetermined interval from the lower end of the probe 220, thereby further forming the cable accommodating space S, so that the cable 270 can be more stably installed.

In addition, a cable channel 250 is formed on the lower side of the probe cover 230 to communicate the inside and the outside, so that the cable 270 is connected to the outside from the cable housing space S through the cable channel 250 Power supply (not shown) or external device 300.

That is, the cable is configured to be connected to the probe 220 on one side, extend toward the lower side of the probe 220 and be supported by the lower end of the probe cover 230, and pass through the cable channel 250 toward the The lifting movement direction of the probe 220 extends in a vertical direction to be connected to the outside, thereby minimizing the influence of the cable 270 due to the lifting movement of the probe 220.

The probe 220 may be configured to measure the temperature of the substrate W at least once during the substrate processing step, and may be configured to transmit the measured temperature information to the external device 300.

The external device 300 may be a display device that visually displays the temperature of the substrate W measured from the probe 220. Through this, the user can know the temperature of the substrate W in the substrate processing process in real time. Correspondence.

In addition, the external device 300 may be an alarm generating device that issues an alarm when the temperature of the substrate W measured from the probe 220 has a specific value. Through this, the user can know in real time that the substrate processing process is being performed. According to the state of the substrate W.

In addition, the external device 300 may be a control unit of a temperature adjustment device (not shown) that controls heating or cooling of the substrate W, and the control unit may be configured to be based on the substrate measured from the probe 220 The temperature of W responds in real time.

That is, it is configured to measure the temperature of the substrate W in which the substrate processing step is performed in real time and respond, thereby reducing the occurrence rate of defects and improving the yield.

In addition, the temperature of the substrate W during the substrate processing step is measured in real time without using a separate temperature measurement substrate, so that unnecessary waste of time can be reduced.

In addition, as the substrate processing step is performed, a pressure change or air flow may occur inside the chamber 100, and accordingly the position of the substrate W may fluctuate in the vertical direction.

At this time, the vertical position fluctuation of the substrate W means the increase or decrease of the pressure applied from the upper side of the probe 220, and the probe 220 may be configured to rise or fall with the increase or decrease of the pressure and maintain contact. In the state of the underside of the substrate W.

That is, when the position of the substrate W changes during the substrate processing step, the real-time temperature measurement of the substrate W can be stably performed, which can reduce the incidence of defects and increase the yield. make a contribution.

4, the second embodiment of the substrate temperature measuring device of the present invention will be described.

The substrate temperature measuring device 200-1 according to the second embodiment of the present invention follows the configuration of the first embodiment, and the difference from the configuration of the first embodiment is that the elastic member 240 is provided at the lower ends of the probe 220 and the probe cover 230 Between 232.

The structure of the substrate temperature measuring device 200-1 of the third embodiment is a simplified structure of the probe cover 230 and the probe 220 of the first embodiment. The advantage is that it can reduce the manufacturing cost and make Management is easier.

Referring to FIG. 5, a method for measuring substrate temperature using the substrate temperature measuring device according to the present invention will be described.

Step S10 is a step in which the substrate W is introduced into the chamber 100.

The substrate W is introduced into the chamber 100 by a transfer unit (not shown), and is located on the upper side of the substrate supporting portion 110 that supports the substrate W.

The substrate support portion 110 is provided with at least one support pin 111 and a probe 220 protruding from the upper surface, and the probe 220 may be provided to penetrate the substrate support portion 110.

The probe 220 is inserted into the probe cover 230 before this step S10 to be set inside the probe cover 230.

At this time, the probe 220 is set up in the following manner: the probe 220 is inserted from the upper side to the lower side through the open part of the upper end of the probe cover 230, and one side is connected to the other of the cable 270 of the probe. After one end is taken out to the outside through the cable channel 250, the cable channel 250 is sealed with the cable 270 passing through the cable channel 250, and the other side end of the cable 270 is sealed The part is connected to an external device 300 such as a power supply.

The at least one supporting pin 111 and the probe cover 230 are connected to each other on the lower side of the substrate supporting portion 110, so that they can be simultaneously moved up and down by the driving of a driving portion (not shown).

At this time, the probe 220 is equipped in a state protruding upward compared to the at least one support pin 111, and can be configured to be independent of the movement driven by the driving portion, and the probe 220 The pressure applied from the upper side moves up and down inside the probe cover 230.

Step S20 is a step of reducing the distance between the substrate support portion 110 and the substrate W.

In this step, the substrate W can maintain its position in a state of being supported by the transfer unit, and can be configured such that the at least one support pin 111 and the probe cover 230 are driven by the drive unit. The ascending movement reduces the distance between the substrate W and the substrate supporting portion 110.

Step S30 is a step in which the lower side of the substrate W is connected to the upper end of the probe 220.

As described in the step S10, the probe 220 is equipped in a state of protruding upward compared to the at least one support pin 111, so the lower side of the substrate W contacts the at least one support pin 111 before The upper end of the probe 220.

The at least one support pin 111 and the probe cover 230 maintain the upward movement while the probe 220 is in contact with the substrate to reduce the distance between the substrate W and the substrate support portion 110. A pressure is applied to the upper side of the probe 220 by the weight of the substrate W, so that the probe 220 is relatively lowered inside the probe cover 230.

Step S40 is a step of placing the lower side surface of the substrate W in contact with the upper end of the at least one support pin 111, and the ascending movement of the at least one support pin 111 and the probe cover 230 is stopped to cause the The height of at least one support pin 111 is fixed.

Accordingly, the vertical position of the substrate W is fixed to the height of the at least one support pin 111, so the probe 220 inside the probe cover 230 will also have the same height as the at least one support pin 111.

That is, the probe 220 is lowered from a height protruding upward compared to the at least one support pin 111 to the same height as the at least one support pin 111 by time pressure from the upper side.

At this time, between the probe 220 and the probe cover 230, an elastic member 240 having a restoring force in the vertical direction may be provided.

Accordingly, if pressure is applied from the upper side of the probe 220, the elastic member 240 will be compressed to lower the probe 220, and if the pressure is released, the elastic member 240 will expand by restoring force. Thus, the probe 220 is raised.

Step S50 is a step of measuring the temperature of the substrate W.

This step S50 may be implemented at the same time as the substrate processing process for the substrate W is performed, and may be performed at least once during the substrate processing process.

That is, by measuring the temperature of the substrate W on which the substrate processing step is performed in real time and responding, it is possible to reduce the incidence of defects and increase the yield.

In addition, the temperature of the substrate W during the substrate processing step can be measured in real time without using a separate temperature measurement substrate, so that unnecessary time waste can be reduced.

In addition, as the substrate processing step is performed, a pressure change or air flow may occur inside the chamber 100, and accordingly, the position of the substrate W may fluctuate in the vertical direction.

At this time, the position fluctuation of the substrate W in the vertical direction means the increase or decrease of the pressure applied from the upper side of the probe 220, and the probe 220 may be configured to increase or decrease with the increase or decrease of the pressure and maintain The state of being in contact with the lower surface of the substrate W.

That is, when the position of the substrate W changes during the substrate processing step, the real-time temperature measurement of the substrate W can be stably performed, which can reduce the incidence of defects and increase the yield. Rate to contribute.

The substrate processing step may be a reflow step.

Step S60 is a step in which the distance between the substrate support portion 110 and the substrate W becomes longer, and step S70 is a step in which the substrate W is drawn out from the chamber 100 by the transfer unit.

When the substrate processing step is completed, the transfer unit is introduced into the chamber 100, and the at least one support pin 111 and the probe cover 230 are driven by the driving part to move down and move all The substrate W is transferred to the transfer unit.

As the at least one support pin 111 and the probe cover 230 descend and move, the substrate W is separated from the at least one support pin 111 for the first time, and is connected to the probe 220 within a predetermined interval. It is far away from the substrate support portion 110 and the position of the probe 220 is completely restored by the restoring force of the elastic member 240 and then separated from the probe 220 for the second time.

After this step S70 is performed, the probe 220 is discharged from the probe cover 230 to release the setting.

At this time, the probe 220 is released by the following method: separating the other end of the cable 270 from the external device 300 such as a power supply, and after releasing the seal of the cable channel 250, the probe The 220 is pulled upward to be discharged from the probe cover 230 through the opening at the upper end of the probe cover 230.

That is, according to the present invention, the probe 220 can be simply installed and removed, and the cable channel 250 can be sealed, so that the airtightness of the substrate processing space inside the chamber 100 can be improved, and the The substrate W is defective in the substrate processing step.

The seal for sealing the cable channel is made of epoxy resin.

Moreover, as described above, the setting and release of the probe 220 are performed before and after the substrate processing process, but it is not always performed before and after each process, but is performed when the probe 220 needs to be replaced.

As described above, according to the substrate temperature measuring device and the substrate temperature measuring method of the present invention, the temperature of the substrate W undergoing the substrate processing process can be measured in real time to respond, thereby reducing the incidence of defects and improving the yield.

In addition, the temperature of the substrate W during the substrate processing step can be measured in real time without using a separate temperature measurement substrate, thereby reducing unnecessary waste of time.

In addition, when the substrate processing step is performed, when the position of the substrate W is changed, the contact with the substrate W can be maintained so that the real-time temperature measurement of the substrate W can be performed stably, thereby Can reduce the incidence of defects and increase the yield.

In addition, the placement process of the substrate W is composed of the following two steps: firstly, contact with the probe 220 and then contact with at least one support pin 111 to relieve the impact and prevent damage to the substrate.

In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to the display device, so that the temperature of the substrate W can be grasped in real time and corresponding.

In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to an alarm generating device, so that the state of the substrate W can be grasped in real time and responded.

In addition, the temperature of the substrate W undergoing the substrate processing step is measured in real time and transmitted to the control unit, so that the control unit can grasp the temperature of the substrate W in real time and adjust it.

Moreover, a cable accommodating space with a predetermined interval is ensured between the lower end of the probe 220 and the lower end 232 of the probe cover 230, so that the cable 170 can be maintained in a more stable state when the probe 220 moves up and down.

In addition, the probe cover 230 is configured in a tube shape with only the upper end open, thereby blocking the communication between the inside and the outside of the chamber 100, so as to prevent external air and external particles from affecting the substrate processing process.

In addition, a substrate temperature measuring device that can easily install and replace the probe 220 is provided, thereby improving the convenience of the user, and is configured to maintain other components of the substrate temperature measuring device, and only By replacing the probe 220, unnecessary expenses can be reduced.

The present invention is not limited to the above-mentioned embodiments. The scope of protection claimed in the scope of the patent application and the detailed description of the present invention and the scope of the drawings, without departing from the technical idea of the present invention, the technology to which the present invention belongs Persons with basic knowledge in the field can realize obvious variant implementations, and these variant implementations fall within the scope of the present invention.

W: substrate

100: chamber

110: substrate support

111: Support pin

200: substrate temperature measuring device

210: The upper end of the substrate temperature measuring device

220: Probe

230: Probe cover

240: elastic parts

Claims (17)

A substrate temperature measuring device includes: a probe cover, which penetrates the substrate support part supporting the substrate up and down and is formed into a tube shape with an open upper end; a support member protruding toward the inner side of the probe cover; a probe inserted into the probe cover Move up and down, and the lower end is inserted into the inner side of the support member, and the upper end protrudes from the upper surface of the substrate support part, so that the protruding upper end is connected to the lower side of the substrate, thereby measuring the temperature of the substrate; The outer side of the probe protrudes and is provided on the upper side of the support member; and an elastic member, the lower end is supported by the upper end of the support member, and the upper end is supported by the lower end of the clamping member, thereby elastically supporting the up and down movement of the probe; A cable containing space with a predetermined pitch is formed between the lower end of the probe and the lower end of the probe cover to arrange the cables connected to the probe; the lower side of the probe cover is equipped with connecting the inside and the outside of the probe cover The cable channel is connected to the outside through the cable channel, and the cable channel is sealed in a state where the cable passes. The probe setting method is to insert it through the open part of the upper end of the probe cover , The cable channel is sealed and installed in a state where the cable passes through the cable channel, and the probe is configured to release the sealing of the cable channel and then be discharged through the open part of the upper end of the probe cover to be removed. The substrate temperature measuring device described in the first item of the scope of patent application, wherein the elastic member is composed of a spring. In the substrate temperature measuring device described in item 1 of the scope of patent application, the sealing member sealing the cable channel is made of epoxy resin. The substrate temperature measuring device according to the first item of the scope of patent application, wherein the upper side of the substrate supporting portion is equipped with at least one support pin that is connected to the lower side of the substrate to support the substrate, and the probe is configured as The at least one support pin protrudes toward the upper side and is lowered to the same height as the at least one support pin by the pressure applied from the upper side. If the pressure is released, the position is restored. According to the substrate temperature measurement device described in item 4 of the scope of patent application, the at least one support pin is equipped to penetrate the substrate support portion, and the probe is configured to penetrate the substrate support portion up and down, and is inserted into the substrate support portion. The inside of the tube-shaped probe cover is configured to be connected to the at least one support pin on the lower side of the substrate support portion and simultaneously move up and down. According to the substrate temperature measuring device described in item 4 of the scope of patent application, the at least one support pin is equipped to detour outside the horizontal direction of the substrate support portion and connect from the upper side to the lower side of the substrate support portion, and the probe is configured as It penetrates the substrate support part up and down, and is inserted into the inside of a tube-shaped probe cover that penetrates the substrate support part up and down. The probe cover is configured to be connected to the at least one support pin on the lower side of the substrate support part and move up and down at the same time . The substrate temperature measuring device described in the first item of the scope of the patent application, wherein the probe is configured to measure the temperature of the substrate at least once during the substrate processing process, and transmit it to an external device. In the substrate temperature measuring device described in item 7 of the scope of patent application, the external device is a display device that visually displays the temperature of the substrate measured by the probe. In the substrate temperature measuring device described in item 7 of the scope of patent application, the external device is an alarm generating device that generates an alarm when the temperature of the substrate measured by the probe has a specific value. According to the substrate temperature measuring device described in claim 7 of the patent application, the external device is a control part of a temperature adjusting device that controls heating or cooling of the substrate. A method for measuring substrate temperature is applied to a substrate temperature measuring device to measure a substrate. The substrate temperature measuring device includes a probe cover, a supporting part, a probe, a clamping part, an elastic part, a cable, a cable channel, and a substrate supporting part. The substrate temperature measurement method includes: a) Insert the probe into the probe cover from the upper side to the lower side through the open part of the upper end of the probe cover, and connect one side to the other end of the cable of the probe After being pulled out to the outside through the cable channel, the cable channel is sealed with the cable passing through the cable channel, so that the probe is set inside the probe cover; b) the upper end of the probe is connected to the Measure the temperature of the substrate on the lower side of the substrate; and c) after releasing the sealing of the cable channel, pull the probe upward to remove the probe from the inside of the probe cover through the opening at the upper end of the probe cover Discharge, thereby canceling the setting of the probe. The substrate temperature measurement method described in item 11 of the scope of the patent application further includes the following step between step a) and step b): the substrate and the substrate support portion are spaced apart on the upper side of the substrate support portion The distance between the substrate is reduced, and the lower side of the substrate is in contact with the upper end of the probe; and in the state where the probe and the substrate are in contact, the distance between the substrate support and the substrate is further reduced, and the The substrate is arranged on the upper end of at least one supporting pin protruding from the upper surface of the substrate supporting portion. In the substrate temperature measurement method described in claim 12, the step b) is a step performed simultaneously with the substrate processing process for the substrate, and is performed at least once during the substrate processing process. In the substrate temperature measurement method described in item 13 of the scope of patent application, the processing step for the substrate is a reflow step. For the substrate temperature measurement method described in item 12 of the scope of patent application, wherein the probe cover is configured to move up and down simultaneously with the at least one support pin by the driving of the driving part, and follow the probe cover and the at least one support pin Ascending and moving toward the substrate reduces the distance between the substrate support portion and the substrate. The substrate temperature measurement method described in item 12 of the scope of the patent application further includes the following steps between step b) and step c): the distance between the substrate support portion and the substrate becomes larger and the probe and the When the substrates are in contact with each other, the substrate is separated from the upper end of the at least one support pin; the distance between the substrate and the substrate supporting portion is further increased, and the lower side of the substrate is separated from the upper end of the probe. According to the method for measuring substrate temperature according to item 16 of the scope of patent application, the probe cover is configured to move up and down simultaneously with the at least one support pin by the driving of the driving part, and as the probe cover and the at least one support pin move from The substrate moves downward, and the distance between the substrate support portion and the substrate increases.

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