TWI709127B - Display panel and manufacture method of the same, and display device - Google Patents

Abstract

The present invention provides a display panel and a manufacture method of the same, and a display device. The display panel includes a first display area and a second display area. The display panel further includes a substrate, a driving circuit layer, a light emitting functional film layer and a conductive layer in the first display area and the second display area. The driving circuit layer is formed on the substrate. The light emitting functional film layer is formed on the driving circuit layer. The conductive layer is formed on the light-emitting functional film layer. A thickness of the conductive layer disposed in the first display area is smaller than a thickness of the conductive layer disposed in the second display area.

Description

Display panel and preparation method thereof, and display device

The present invention relates to the field of display technology, in particular to a display panel, a preparation method thereof, and a display device.

With the rapid development of electronic devices, users have higher and higher requirements for the screen-to-body ratio, making the full-screen display of electronic devices attract more and more attention in the industry. Electronic devices such as mobile phones, tablet computers, etc., need to integrate front cameras, earpieces, and infrared sensing elements, so you can slot on the display screen (Notch), and set up cameras, earpieces and infrared sensing elements in the slotted area , But the slotted area cannot be used to display pictures, such as Liu Haiping. Alternatively, a camera can be set by opening a hole on the screen. However, for electronic devices that implement the camera function, external light can enter the photosensitive element located below the screen through the opening on the screen, causing poor imaging effects. As such, the display screens of these electronic devices are not full screens, and cannot be displayed in all areas of the entire screen, for example, images cannot be displayed in the camera area.

According to a first aspect of the embodiments of the present invention, there is provided a display panel, the display panel having a first display area and a second display area, and the display panel includes a display panel located in the first display area and the second display area. The substrate, the driving circuit layer, the light-emitting function film layer and the conductive layer; the driving circuit layer is formed on the substrate; the light-emitting function film layer is formed on the driving circuit layer; the conductive layer is formed on On the light-emitting functional film layer, the thickness of the conductive layer located in the first display area is smaller than the thickness of the conductive layer located in the second display area.

According to a second aspect of the embodiments of the present invention, there is provided a display device, including: a device body having a device area; the above-mentioned display panel, covering the device body; wherein the device area is located in the first display Under the area, and in the device area, a photosensitive element that transmits light through the first display area is arranged in the device area.

In the above display device, since the thickness of the conductive layer located in the first display area of the display panel is smaller than the thickness of the conductive layer located in the second display area, the light transmittance of the first display area can be made greater than that of the second display area. Light transmittance, so that the photosensitive element arranged below the first display area can receive enough light to ensure that the photosensitive element can work normally.

According to a third-party supplier of an embodiment of the present invention, a method for manufacturing a display panel is provided, the display panel having a first display area and a second display area, and the manufacturing method includes: forming a substrate; Forming a driving circuit layer; forming a light-emitting function film layer on the driving circuit layer; forming a conductive layer on the light-emitting function film layer, and the thickness of the conductive layer in the first display area is smaller than that in the second display area The thickness of the conductive layer.

According to a fourth aspect of the embodiments of the present invention, there is provided an array substrate, the array substrate includes a transparent first OLED substrate and a non-transparent second OLED substrate, the first OLED substrate is at least partially covered by the second OLED substrate Surrounded by a substrate; the first OLED substrate and the second OLED substrate include a substrate, a driving circuit layer formed on the substrate, and a light-emitting function film layer formed on the driving circuit layer. The driving circuit layer of the first OLED substrate includes a plurality of first driving circuit units, the first driving circuit unit includes a storage capacitor and a first transistor, and the storage capacitor includes a first electrode plate and a second electrode. The first drive circuit unit has a first conductive layer, a part of the first conductive layer is used as the first electrode plate, and the other part is used as the gate electrode of the first transistor.

In the above-mentioned array substrate, since a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor, the gate of the first transistor and the storage capacitor When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of a driving circuit unit.

According to a fifth aspect of the embodiments of the present invention, there is provided a display screen including the above-mentioned array substrate and a packaging structure, the packaging structure being disposed on a side of the array substrate away from the substrate.

In the above-mentioned display screen, because part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor and the storage capacitor When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of the driving circuit unit further simplifies the manufacturing process flow of the driving circuit layer of the first OLED substrate.

According to a sixth aspect of the embodiments of the present invention, there is provided a display device, the display device comprising: a device body having a device area; the above-mentioned display screen covering the device body; wherein the device area is located at the device body Below the first OLED substrate, and in the device area, a photosensitive element that collects light through the first OLED substrate is arranged.

100‧‧‧Display Panel

A‧‧‧First display area

B‧‧‧Second display area

1,1’‧‧‧Substrate

2,2’‧‧‧Drive circuit layer

3,3’‧‧‧Light-emitting functional film

4‧‧‧Conductive layer

d1,d2‧‧‧thickness

41‧‧‧The first sub-conductive layer

42‧‧‧Second sub-conductive layer

43‧‧‧The third sub-conductive layer

7‧‧‧Pixel limited layer

11‧‧‧First substrate

12‧‧‧Second substrate

111‧‧‧Transparent material layer

112‧‧‧Layer

113‧‧‧First organic layer

114‧‧‧First inorganic layer

121‧‧‧Second organic layer

122‧‧‧Second inorganic layer

123‧‧‧The third organic layer

124‧‧‧The third inorganic layer

5‧‧‧Protection layer

8‧‧‧Buffer layer

24,24’‧‧‧Gate insulation layer

25,25’‧‧‧Capacitor insulation layer

26,26’‧‧‧Interlayer dielectric layer

27,27’‧‧‧Planarization layer

21,23,21’‧‧‧Anode layer

22‧‧‧Transparent organic material film

91,91’‧‧‧First conductive layer

92,92’‧‧‧Second conductive layer

T1‧‧‧First transistor

T2‧‧‧Second Transistor

C‧‧‧Storage capacitor

D2‧‧‧Second Plate

D1‧‧‧First plate

93,93’‧‧‧The third conductive layer

T3‧‧‧Third Transistor

T4‧‧‧Fourth Transistor

200‧‧‧Display device

201‧‧‧Equipment body

202‧‧‧Device area

203‧‧‧Photosensitive element

101‧‧‧Substrate layer

102‧‧‧Groove

401‧‧‧First conductive film layer

402‧‧‧Second conductive film layer

403‧‧‧The third conductive film layer

404‧‧‧The fourth conductive film layer

300‧‧‧Transparent OLED substrate

Part of 912,921,932,912’,921’,932’‧‧‧

911,922,931,911’,922’,931’‧‧‧ another part

S101,S102,S103,S104,S1011,S1012,S1013,S1014,S1015,S1041,S1042,S1043,S1044‧‧‧Step

Figure 1 is a top view of a display panel provided by an embodiment of the present invention.

Figure 2 is a cross-sectional view of the display panel shown in Figure 1 taken along line CC'.

Figure 3 is a partial cross-sectional view of the display panel shown in Figure 1 taken along line CC'.

Fig. 4 is a cross-sectional view of the substrate of the display panel shown in Fig. 1.

Fig. 5 is a partial cross-sectional view of another display panel shown in Fig. 1, taken along line CC'.

FIG. 6 is a cross-sectional view of a first display area of a display panel according to an embodiment of the present invention.

FIG. 7 is a circuit diagram of a first driving circuit unit according to an embodiment of the present invention.

FIG. 8 is a cross-sectional view of the first display area of another display panel provided by an embodiment of the present invention.

FIG. 9 is a circuit diagram of another first driving circuit unit provided by an embodiment of the present invention.

Figure 10 is a side view of a display device provided by an embodiment of the present invention.

Fig. 11 is a schematic diagram of the structure of the main body of the display device shown in Fig. 10.

FIG. 12 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present invention.

Fig. 13 is a flowchart of the method of forming a substrate in Fig. 12.

Figure 14 is a schematic diagram of the structure of the substrate layer provided by an embodiment of the present invention.

Figure 15 is a schematic structural diagram of a first intermediate structure provided by an embodiment of the present invention.

Figure 16 is a schematic structural diagram of a second intermediate structure provided by an embodiment of the present invention.

Figure 17 is a schematic structural diagram of a third intermediate structure provided by an embodiment of the present invention.

Figure 18 is a flow chart of a method for forming a conductive layer on the light-emitting function film layer provided by an embodiment of the present invention.

Figure 19 is a schematic structural diagram of a fourth intermediate structure provided by an embodiment of the present invention.

Figure 20 is a schematic structural diagram of a fifth intermediate structure provided by an embodiment of the present invention.

Fig. 21 is a flowchart of another method for forming a conductive layer on the light-emitting function film layer provided by an embodiment of the present invention.

Figure 22 is a schematic structural diagram of a sixth intermediate structure provided by an embodiment of the present invention.

Figure 23 is a schematic structural diagram of a seventh intermediate structure provided by an embodiment of the present invention.

Figure 24 is a schematic structural diagram of a transparent OLED substrate provided by an embodiment of the present invention.

FIG. 25 is a cross-sectional view of a transparent OLED substrate provided by an embodiment of the present invention.

FIG. 26 is a cross-sectional view of another transparent OLED substrate provided by an embodiment of the present invention.

The display panel and the manufacturing method thereof in the embodiment of the present invention will be described in detail below in conjunction with the drawings. In the case of no conflict, the following embodiments and features in the implementation can be mutually supplemented or combined.

In smart electronic devices such as mobile phones and tablet computers, since it is necessary to integrate photosensitive elements such as front cameras and light sensors, in order to achieve a full screen, the photosensitive elements can be arranged on the backlight surface of the display panel of the electronic device. However, the light transmittance of the display panel is low, and the photosensitive element arranged on the backlight surface of the display panel cannot receive enough light, which causes the photosensitive element to not work normally. For example, a camera arranged on the backlight surface of the display panel collects less light. , The quality of the captured image is poor.

The reason for this problem is that the thickness of the film layer of the display panel is large, resulting in low light transmittance.

In order to solve the above-mentioned problem, an embodiment of the present invention provides a display panel. As shown in FIG. 1 and FIG. 2, the display panel 100 has a first display area A and a second display area B, and a photosensitive element can be disposed under the first display area A. The display panel 100 includes a substrate 1 located in a first display area A and a second display area B, a driving circuit layer 2, a light-emitting function film layer 3 and a conductive layer 4. The drive circuit layer 2 is formed on the substrate 1, the light-emitting function film layer 3 is formed on the drive circuit layer 2, and the conductive layer 4 is formed on the light-emitting function film layer 3 and is located on the The thickness d1 of the conductive layer in the first display area A is smaller than the thickness d2 of the conductive layer in the second display area B.

In the embodiment of the present invention, for the convenience of description, the direction from the substrate 1 to the driving circuit layer 2 is defined as up, and the direction from the driving circuit layer 2 to the substrate 1 is defined as down to determine the up and down directions. Different direction definition methods will not affect the actual operation content of the process and the actual form of the product.

In the display panel 100 provided by the embodiment of the present invention, since the thickness of the conductive layer located in the first display area A is less than the thickness of the conductive layer located in the second display area B, the light transmittance of the first display area A can be greater than that of the second display area. The light transmittance of the area B, so that the photosensitive element disposed under the first display area A can receive enough light to ensure that the photosensitive element can work normally.

The second display area B may at least partially surround the first display area A. In the display panel 100 shown in FIG. 1, the second display area B completely surrounds the first display area A. In an embodiment, the second display area B may partially surround the first display area A. The second display area B is the main display area of the display panel 100 and usually occupies more than 90% of the area of the display panel. The lower part of the first display area A can usually be used for setting photosensitive devices such as cameras and light sensors.

In one embodiment, referring to FIG. 3, the portion of the conductive layer 4 located in the first display area A is the first sub-conductive layer 41, and the portion of the conductive layer 4 located in the second display area includes the second sub-conductive layer 42 and The third sub-conductive layer 43 is located on the second sub-conductive layer 42.

Wherein, the material of the first sub-conductive layer 41 is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide; or, the material of the first sub-conductive layer 41 includes Mg and Ag. At least one of. Preferably, the first sub-conductive layer 41 includes two materials, Mg and Ag, and the ratio of the quality of Mg to the quality of Ag ranges from 1:4 to 1:20. This configuration can ensure that the light transmittance of the first display area A is relatively large, so that the sensor disposed under the first display area A can receive more light.

One of the second conductive sub-layer 42 and the third conductive sub-layer 43 may be made of the same material as the first conductive sub-layer 41 and formed in the same process step. When forming the conductive layer 4, the second sub-conductive layer 42 and the first sub-conductive layer 41 are formed simultaneously, and then the third sub-conductive layer 43 is formed on the second sub-conductive layer 42. The material of one sub-conductive layer 41 is the same, and the material of the third sub-conductive layer 43 may include at least one of Mg and Ag. Alternatively, when forming the conductive layer 4, the second sub-conductive layer 42 is formed first, and then the first sub-conductive layer 41 and the third sub-conductive layer 43 are formed at the same time, and the materials of the first sub-conductive layer 41 and the third sub-conductive layer 43 Similarly, the material of the second sub-conductive layer 42 may include at least one of Mg and Ag.

In an embodiment, the conductive layer 4 may be a cathode layer. Wherein, the cathode layer may be a surface electrode, covering the entire area of the display panel 100. That is, the first sub-conductive layer 41 covers the first display area A, and the second sub-conductive layer 42 and the third sub-conductive layer 43 cover the second display area B.

In one embodiment, the thickness of the first sub-conductive layer 41 in the first display area A and the thickness of the conductive layer in the second display area B (that is, the second sub-conductive layer 42 and the third sub-conductive layer 42) The ratio of the total thickness of the layer 43) can range from 0.25:1 to 0.85:1, for example, 0.3, 0.5, 0.7, 0.85, etc. Wherein, in the embodiment of the present invention, the thickness refers to the size of the film layer in the vertical direction.

Further, the thickness of the first sub-conductive layer 41 located in the first display area A may range from 5 to 10 nm, and the total thickness of the second sub-conductive layer 42 and the third sub-conductive layer 43 located in the second display area B The range can be 12-20nm. Such a configuration can ensure that the light transmittance of the first sub-conductive layer 41 is good, and at the same time, the conductive and mechanical properties of the conductive layer 4 are good, and the display panel 100 can work normally.

In an embodiment, the light-emitting functional film layer 3 may include an organic light-emitting material and a common layer. Among them, the common layer may include an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer. The electron injection layer and the electron transport layer are located between the organic light-emitting material and the conductive layer 4, and the hole injection layer and the hole transport layer are located between the driving circuit layer 2 and the light-emitting functional film layer 3. Wherein, the electron injection layer, the electron transport layer, the hole injection layer and the hole transport layer are all arranged in a whole layer, covering the first display area A and the second display area B.

Further, the material of the electron injection layer includes Ag, and at least one of Mg, K, Li, and Cs. Preferably, the ratio of the quality of Ag in the electron injection layer to the total quality of the electron injection layer ranges from 1:5 to 1:21, that is, the quality of Ag in the electron injection layer and the quality of other components The ratio range is 1:4~1:20.

The display panel 100 may further include a pixel defining layer 7 provided in the same layer as the light-emitting function film layer 3, the pixel defining layer 7 may be provided with pixel openings, and the organic light-emitting material of the light-emitting function film layer 3 is disposed in the pixel openings.

In one embodiment, referring again to FIG. 2, the substrate 1 may include a first substrate 11 and a second substrate 12. The first substrate 11 is located in the first display area A, and the second substrate The bottom 12 is located in the second display area B, and the light transmittance of the first substrate 11 is greater than the light transmittance of the second substrate 12. In this way, the light transmittance of the first display area A can be made larger, and it is more conducive for the photosensitive element disposed under the first display area A to receive more light.

The substrate 1 may be a flexible substrate or a rigid substrate. The rigid substrate may be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

When the substrate 1 is a flexible substrate, referring to FIG. 4, the second substrate 12 may be a stack of multiple organic material layers and multiple inorganic material layers; the first substrate includes at least a transparent material Layer 111, the thickness of the first substrate 11 and the thickness of the second substrate 12 are the same. When the thickness of the first substrate 11 is the same as the thickness of the second substrate 12, it is advantageous to set the entire display panel 100 to the same thickness, thereby making the entire display panel 100 more beautiful.

In order to ensure a high light transmittance of the first substrate 11, the material of the transparent material layer 111 needs to be a material with a high light transmittance. Preferably, the light transmittance of the transparent material layer 111 of the first substrate 11 may be greater than 90%. Further, the material of the transparent material layer 111 of the first substrate 11 may include at least one of PET (polyethylene terephthalate) and PC (polycarbonate). The light transmittance of PET and PC are both 92%, which can make the light transmittance of the first substrate 11 higher.

In order to ensure that the brightness of the second display area B is high when the display panel 100 is working, the light transmittance of the second display area B needs to be lower to reduce the brightness loss of the second display area B. The light transmittance of the second substrate 12 of the second display area B may be within 30%-60%, so as to reduce the light transmittance of the second display area B and increase the brightness of the second display area B during display.

Wherein, the material of the organic material layer of the second substrate 12 may be PI (polyimide), and the refractive index of PI is not much different from the refractive index of PET and PC, then the first substrate 11 and the second substrate 12 The refractive index of the first substrate 11 and the second substrate 12 are different, which can avoid the large difference between the display effect of the first display area A and the second display area B, which makes the whole display panel 100 The effect is relatively consistent. Wherein, the material of the inorganic material layer of the second substrate 12 may be SiO ₂ , SiNx, or the like.

Further, the first substrate 11 further includes a stack 112 of an organic material layer and an inorganic material layer, and the stack 112 of the first substrate 11 and the stack of the second substrate 12 share a part Film layer material. Specifically, the organic material layer of the first substrate 11 and the organic material layer of the second substrate 12 in the same layer share the film material, and the inorganic material layer of the first substrate and the second substrate 12 in the same layer The inorganic material layer shares the film layer material.

Referring again to FIG. 4, the stack 112 of the first substrate 11 may include a first organic layer 113 and a first inorganic layer 114 on the first organic layer 113, and the stack of the second substrate 12 The layers include a second organic layer 121, a second inorganic layer 122, a third organic layer 123, and a third inorganic layer 124 that are sequentially overlapped from bottom to top. The first organic layer 113 is shared with part of the third organic layer 123 The same film material, the first inorganic layer 114 and the third inorganic layer 124 share the same film material, the thickness of the first organic layer 113 is less than the thickness of the third organic layer 123, the first The thickness of the inorganic layer 114 is equal to the thickness of the third inorganic layer 124. Wherein, the first inorganic layer 114 and the third inorganic layer 124 share the same film layer material means that the two materials are the same and are formed in the same process step, and the first organic layer 113 shares part of the third organic layer 123 The same film layer material means that the two materials are the same and formed at the same time. When forming the first organic layer 113 and the third organic layer 123, the organic material layer of the same thickness can be formed at the same time, and then the organic material layer located in the first display area A is partially etched away to obtain the first organic layer 113 and the third organic layer 123.

The transparent material layer 111 of the first substrate 11 can be disposed under the stack 112 of the first substrate 11, and the lower end surface of the transparent material layer 111 of the first substrate 11 is The lower end surface of the substrate 12 is flush. Furthermore, if the upper end surface of the stack 112 of the first substrate 11 is flush with the upper end surface of the second substrate 12, the total thickness of the first substrate 11 is the same as the total thickness of the second substrate 12, so that It is beneficial to make the thickness of the display panel 100 approximately the same as a whole, which is beneficial to improve the aesthetics of the display panel 100.

In one embodiment, referring to FIG. 4 again, the bottom of the first substrate 11, the bottom of the second substrate 12, the side surface of the transparent material layer 111 of the first substrate 11 and the second substrate 12 A protective layer 5 is provided between and/or between the upper end of the transparent material layer 111 of the first substrate 11 and the laminated layer 112 of the first substrate 11. The protective layer 5 can protect the first substrate 11 and the second substrate 12, improve the mechanical strength of the display panel, and thereby increase the service life of the display panel 100.

Wherein, the material of the protective layer 5 may include at least one of IZO, ITO, SiNx, and SiOx. The above-mentioned materials can make the light transmittance of the protective layer 5 higher, and prevent the arrangement of the protective layer 5 from affecting the light transmittance of the first display area A.

In one embodiment, a buffer layer 8 may be provided between the substrate 1 and the driving circuit layer 2, and the material of the buffer layer 8 may be SiNx or SiOx. The buffer layer 8 can improve the viscosity performance of the substrate 1 and the driving circuit layer 2. This prevents the substrate 1 from being separated from the driving circuit layer 2 and improves the service life of the display panel 100.

In the display panel 100 provided by the embodiment of the present invention, the driving mode of the first display area A may be passive driving or active driving. When the driving mode of the first display area A is passive driving, the first display area A is PMOLED (Passive-Matrix Organic Light-Emitting Diode) display area; when the driving mode of the first display area A is active driving, the first display area A is an AMOLED (Active-Matrix Organic Light-Emitting Diode) display area. The driving mode of the second display area B is active driving, and the second display area is an AMOLED display area.

FIG. 3 is a cross-sectional view of the first display area A and part of the second display area B of the display panel 100 taken along the line CC' in FIG. 1. Referring to Figure 3, the portion of the driving circuit layer 2 in the second display area B may include a gate insulating layer 24, a capacitor insulating layer 25 on the gate insulating layer 24, an interlayer dielectric layer 26 on the capacitor insulating layer 25, The planarization layer 27 on the interlayer dielectric layer 26, the anode layer 23 on the planarization layer 27, and the transistor (not shown) and the storage capacitor (not shown) disposed between the film layers. Wherein, the material of the anode layer 23 may be a sandwich structure in which an Ag film layer is arranged between two indium tin oxide film layers.

When the first display area A is a PMOLED display area, the structure in which the driving circuit layer 2 is located in the first display area A can have the following several ways.

In the first way, referring to Figure 3, the portion of the driving circuit layer 2 located in the first display area A includes a gate insulating layer 24, a capacitor insulating layer 25 on the gate insulating layer 24, and a capacitor insulating layer 25 on the capacitor insulating layer. The interlayer dielectric layer 26, the planarization layer 27 on the interlayer dielectric layer 26, and the anode layer 21 on the planarization layer 27. Wherein, the gate insulating layer 24, the capacitor insulating layer 25, the interlayer dielectric layer 26, the planarization layer 27 and the corresponding film layers in the planarization layer 27 of the first display area A and the second display area B are located on the same layer, and Formed in the same process. The material of the anode layer 21 may be a single-layer film structure made of a transparent material. Further, the transparency rate of the transparent material of the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, it can be ensured that the light transmittance of the anode layer 21 of the first display area A is relatively high, and thereby the light transmittance of the first display area A is improved.

In the second way, the portion of the driving circuit layer 2 located in the first display area A may only include the anode layer 21 and not other film layers, so that the light transmittance of the driving circuit layer in the first display area A can be higher. . Wherein, the material of the anode layer 21 may be a single-layer film structure made of a transparent material. Further, the transparency rate of the transparent material for preparing the anode layer 21 is greater than or equal to 90%. Preferably, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide.

In the third method, referring to FIG. 5 (FIG. 5 is a cross-sectional view of the first display area A and part of the second display area B of the display panel 100 taken along line CC' in FIG. 1), the driving circuit layer 2 The part located in the first display area A may include an anode layer 21 and a transparent organic material film layer 22 disposed under the anode layer 21. The transparent organic material film layer 22 and the anode layer 21 may be made of transparent materials, and the material of the anode layer 21 may be a single-layer film structure made of transparent materials. Further, the light transmittance of the transparent organic material film layer 22 and the anode layer 21 are both greater than 90%. Preferably, the transparent material for preparing the anode layer 21 is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. The material of the transparent organic material film layer 22 may be PET or PC. Furthermore, the total thickness of the multi-layer insulating layer of the second display area B (ie, the gate insulating layer 24, the capacitor insulating layer 25, the interlayer dielectric layer 26, and the planarization layer 27) of the second display area B is the same as the first The thickness of the transparent organic material film layer 22 in the display area A is the same, so that the portion of the driving circuit layer 2 located in the first display area A and the portion located in the second display area B have the same thickness, which facilitates the overall thickness of the display panel 100 It is substantially the same, thereby improving the aesthetics of the display panel 100.

When the first display area A is an AMOLED display area, the driving circuit layer 2 is provided with a plurality of transistors and a plurality of storage capacitors in the portion of the first display area A, and the plurality of transistors and a plurality of storage capacitors form a plurality of first The driving circuit unit is used to drive the organic light emitting material of the light emitting function film layer 3 to emit light, so that the first display area A is displayed.

The second display area B is an AMOLED display area. The driving circuit layer 2 is located in the second display area B. A plurality of transistors and a plurality of storage capacitors are provided in the portion of the second display area B. The plurality of transistors and a plurality of storage capacitors constitute a plurality of second drives. The circuit unit is used to drive the organic light-emitting material of the light-emitting function film 3 to emit light, so that the second display area B displays.

In one embodiment, the number of transistors of the first drive circuit unit is smaller than the number of transistors of the second drive circuit unit. Optionally, the first driving circuit unit may be a 2TIC driving circuit (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit). The circuit unit includes three transistors and a storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (that is, the second driving circuit unit includes seven transistors and a storage capacitor), a 5TIC circuit (that is, the second driving circuit unit includes five transistors and a storage capacitor), 4TIC circuit (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. With this arrangement, the structural complexity of the first driving circuit unit is less than the structural complexity of the second driving circuit unit, so that the area of the conductive layer of the driving circuit layer 2 in the portion of the first display area A is small, and the first Display area A's light transmittance.

The transistor of the first drive circuit unit may include a first transistor, and the storage capacitor of the first drive circuit unit includes a first plate and a second plate. Referring to Figures 6 and 8, the portion of the driving circuit layer 2 located in the first display area A has a gate insulating layer 24, a capacitor insulating layer 25 on the gate insulating layer 24, and an interlayer dielectric on the capacitor insulating layer 25 The layer 26, the planarization layer 27 located on the interlayer dielectric layer 26, and the first conductive layer 91 located between the gate insulating layer 24 and the capacitor insulating layer 25, a part 912 of the first conductive layer 91 serves as the storage The first plate of the capacitor, and the other part 911 serves as the gate of the first transistor. With this arrangement, when the gate of the first transistor, the first plate of the storage capacitor and the connection between the two can be completed through the same process step, there is no need to connect the gate of the first transistor and the first plate of the storage capacitor. After the formation, the connection structure between the two is prepared, which can simplify the manufacturing process of the first driving circuit unit. Wherein, the first plate may be the lower plate of the storage capacitor, and the second plate may be the upper plate of the storage capacitor.

When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer located in the first display area further includes power lines, data lines, scan lines, and anode layers corresponding to a plurality of first driving circuit units one-to-one. As shown in Figure 6, the portion of the driving circuit layer 2 in the first display area has an anode layer 21 and a second conductive layer 92 on the planarization layer 27 corresponding to the first driving circuit unit one-to-one. A part 921 of the conductive layer 92 serves as the second plate of the storage capacitor, and the other part 922 serves as the power line. With this arrangement, when the power line, the second plate of the storage capacitor and the connection between the two can be completed through the same process step, there is no need to prepare the connection between the power line and the second plate of the storage capacitor after the formation of the two The structure can simplify the manufacturing process flow of the first driving circuit unit.

In addition to the first conductive layer 91, the second conductive layer 92, and the anode layer 21 shown in the figure, the portion of the driving circuit layer 2 shown in FIG. 6 located in the first display area A also includes data lines, scan lines, first The source and drain of the transistor, the gate, source and drain of the second transistor, but these structures are not shown in Figure 6.

When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as shown in Figure 7. The transistor of the first driving circuit unit includes a first transistor T1 and a second transistor T2. The first transistor T1 The source and the second plate D2 of the storage capacitor C are respectively connected to the power line, the drain of the first transistor T1 is connected to the anode layer of the corresponding OLED (Organic Light-Emitting Diode), and the first The gate of a transistor is connected to the first plate D1 of the storage capacitor C; the gate of the second transistor T2 is connected to the scan line, and the drain of the second transistor T2 is respectively connected to the storage capacitor C The first electrode plate D1 and the gate electrode of the first transistor T1 are connected, and the source electrode of the second transistor T2 is connected to the data line.

Since the drain of the second transistor T2 is connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer serves as the first plate D1 of the storage capacitor C. A part is used as the gate of the first transistor T1, and structurally, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second plate D2 of the storage capacitor C and the power line, a part of the second conductive layer serves as the second plate D2 of the storage capacitor C, and the other part serves as the power supply Line, structurally speaking, the source of the first transistor T1 is connected to the second conductive layer.

In one embodiment, the materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line and the anode layer may be made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, and the light transmittance of the first display area A can be improved.

When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer located in the first display area A includes a power supply line, a data line, a first scan line, a second scan line, a reference potential line, and a plurality of first driving circuits. The circuit unit corresponds to the anode layer one by one. As shown in FIG. 8, the portion of the driving circuit layer 2 located in the first display area has a first conductive layer 91 and a third conductive layer 93 located on the planarization layer 27. A part 932 of the third conductive layer 93 serves as the second electrode plate, and the other part 931 serves as a corresponding anode layer. With this arrangement, when the anode layer, the second plate of the storage capacitor and the connection between the two can be completed through the same process step, there is no need to prepare the connection between the two after the anode layer and the second plate of the storage capacitor are formed. The structure can simplify the manufacturing process flow of the first driving circuit unit.

In addition to the first conductive layer 91 and the third conductive layer 93 shown in the figure, the portion of the driving circuit layer 2 shown in FIG. 8 in the first display area also includes power lines, data lines, first scan lines, and second The scan line, the reference potential line, the source and drain of the first transistor, the gate, source and drain of the third transistor, the gate, source and drain of the fourth transistor, but Figure 8 These structures are not shown in.

When the first drive circuit unit is a 3TIC drive circuit, its circuit diagram is as shown in Figure 9. The transistors of the first drive circuit unit include a first transistor T1, a third transistor T3, and a fourth transistor T4. The source of the third transistor T3 is connected to the data line, the gate of the third transistor T3 is connected to the first scan line, and the drain of the third transistor T3 is respectively connected to the storage capacitor C The first electrode plate D1 and the gate electrode of the first transistor T1 are connected, the drain electrode of the first transistor T1 is connected to the power line, and the source electrode of the first transistor T1 is respectively connected to the anode layer of the OLED And the second plate D2 of the storage capacitor C, the gate of the fourth transistor T4 is connected to the second scan line, and the source of the fourth transistor T4 is connected to the reference potential line, The drain of the fourth transistor T4 is connected to the anode layer of the OLED.

Since the drain of the third transistor T3 is connected to the first plate of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer serves as the first plate of the storage capacitor C, and the other part serves as the first plate of the storage capacitor C. The gate of the first transistor T1 is structurally connected to the drain of the third transistor T3 and the first conductive layer. Since the source of the first transistor T1 is connected to the anode layer and the second plate D2 of the storage capacitor C, the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer serves as The second plate D2 of the storage capacitor C, and the other part is used as the corresponding anode layer. In terms of structure, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer. Conductive layer connection.

In one embodiment, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, and the second transistor of the first drive circuit unit A scan line, the second scan line, the reference potential line and the anode layer are all made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, and the light transmittance of the first display area A can be improved.

An embodiment of the present invention also provides a display device 200. As shown in FIG. 10, the display device 200 includes a device body 201 and the above-mentioned display panel 100. As shown in FIG. 11, the device body 201 has a device area 202, and the display panel 100 covers the device body 201. The device area 202 is located below the first display area of the display panel 100, and the device area 202 is provided with a photosensitive element 203 that passes through the first display area of the display panel 100 to collect light.

Wherein, the photosensitive element 203 may include a camera and/or a light sensor. In the device area 202, devices other than the photosensitive element 203, such as a gyroscope or an earpiece, can also be provided.

The device area 202 may be a grooved area, and the first display area of the display panel 100 may be arranged in close contact with the grooved area, so that the photosensitive element 203 can collect external light through the first display area.

In the above-mentioned display device 200, since the thickness of the conductive layer of the display panel 100 located in the first display area is smaller than the thickness of the conductive layer located in the second display area, the light transmittance of the first display area can be greater than that of the second display area. The light transmittance of the area, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.

The above-mentioned electronic equipment such as a display device may be a mobile phone, a tablet, a palmtop computer, an ipad and other digital equipment.

The embodiment of the present invention also provides a method for manufacturing a display panel, the display panel having a first display area and a second display area, and the manufacturing method includes the following steps S101 to S104, as shown in FIG. 12.

In step S101, a substrate is formed.

Among them, the substrate may be a flexible substrate or a rigid substrate. The rigid substrate may be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.

When the substrate is a flexible substrate, the step S101 of forming the substrate may include the following steps S1011 to S1015, as shown in FIG. 13.

In step S1011, an underlayer is formed.

Wherein, the substrate layer may be a stack of multiple organic material layers and multiple inorganic material layers. As shown in FIG. 14, the substrate layer 101 includes a second organic layer 121, a second inorganic layer 122, a third organic layer 123, and a third inorganic layer 124 that are sequentially overlapped from bottom to top.

In step S1012, a groove is formed at a position of the substrate layer corresponding to the first display area.

The first intermediate structure can be obtained through step S1012, and FIG. 15 is a schematic structural diagram of the first intermediate structure. As shown in FIG. 15, a groove 102 is formed at the bottom of the base layer 101. Wherein, the second organic layer 121, the second inorganic layer 122 and the partial thickness of the third organic layer 123 located in the first display area A can be etched away by an etching process to form the groove 102.

In step S1013, a transparent material layer is formed in the groove.

Wherein, the light transmittance of the transparent material layer may be greater than 90%. Further, the material of the transparent material layer may include at least one of PET and PC.

In one embodiment, before step S1013 of forming a transparent material layer in the groove, the preparation method may further include step S1014: forming a protective layer on the inner surface of the groove and under the substrate layer. Through this step, a second intermediate structure can be obtained. FIG. 16 is a schematic structural view of the second intermediate structure. The protective layer 5 is formed on the inner surface of the groove 102 and the portion of the substrate layer 101 located in the second display area B.

Step S1013 can be implemented on the basis of the second intermediate structure, and the transparent material layer 111 is formed in the groove 102 on the basis of the second intermediate structure to obtain the third intermediate structure. Figure 17 is a schematic diagram of the third intermediate structure.

Further, after step S1013 of forming a transparent material layer in the groove, the preparation method may further include step S1015: forming a protective layer under the transparent material layer.

In this step, on the basis of the third intermediate structure, the protective layer 5 is formed under the transparent material layer 111, and the structure shown in FIG. 4 can be obtained, that is, the substrate 1 can be obtained.

Wherein, the lower end surface of the transparent material layer 111 may be flush with the lower end surface of the substrate layer located in the second display area B, so that the thickness of the substrate located in the first display area A and the substrate located in the second display area B the same.

In step S102, a driver circuit layer is formed on the substrate.

In step S103, a light-emitting function film layer is formed on the driving circuit layer.

In step S104, a conductive layer is formed on the light-emitting function film layer, and the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area. The conductive layer is formed simultaneously with part of the conductive layer of the second display area.

In one embodiment, as shown in FIG. 18, the step S104 of forming a conductive layer on the light-emitting function film layer can be completed by the following steps S1041 and S1042.

In step S1041, a first conductive film layer is formed on the light-emitting function film layer, and the first conductive film layer covers the first display area and the second display area.

The fourth intermediate structure can be obtained through step S1041, and FIG. 19 is a schematic structural diagram of the fourth intermediate structure. As shown in FIG. 19, the driving circuit layer 2 is formed on the substrate 1, and the light-emitting function film layer 3 is formed on the driving circuit layer 2, where A is the first display area, and B is the second display area. The first conductive film layer 401 is formed on the light-emitting function film layer 3, and the first conductive film layer 401 simultaneously covers the light-emitting function film layer 3 in the first display area A and the second display area B.

The material of the first conductive film layer 401 may be indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide. Alternatively, the material of the first conductive film layer 401 includes at least one of Mg and Ag. Preferably, the material of the first conductive film layer 401 includes Mg and Ag, and the ratio of the quality of Mg to the quality of Ag ranges from 1:4 to 1:20.

In step S1042, a second conductive film layer is formed on the first conductive film layer, and the second conductive film layer is only disposed in the second display area.

The fifth intermediate structure can be obtained through step S1042. Figure 20 is a schematic diagram of the fifth intermediate structure. Wherein, the second conductive film layer 402 is only disposed on the second display area B.

Therefore, in the conductive layer 4 obtained through step S1041 and step S1042, the portion of the conductive layer 4 located in the first display area A is only the first conductive film layer 401, and the portion of the conductive layer 4 located in the second display area B includes the first conductive film. Layer 401 and second conductive film layer 402.

Wherein, the material of the second conductive film layer may include at least one of Mg and Ag.

In another embodiment, as shown in FIG. 21, the step S104 of forming a conductive layer on the light-emitting function film layer can be completed by the following steps S1043 and S1044.

In step S1043, a third conductive film layer is formed on the light-emitting function film layer located in the second display area.

The sixth intermediate structure can be obtained through step S1043, and FIG. 22 is a schematic structural diagram of the sixth intermediate structure. As shown in FIG. 22, the driving circuit layer 2 is formed on the substrate 1, and the light-emitting function film layer 3 is formed on the driving circuit layer 2, where A is the first display area, and B is the second display area. The third conductive film layer 403 is formed on the light-emitting function film layer 3 and only covers the second display area B.

Wherein, the material of the third conductive film layer 403 may be the same as the thickness of the second conductive film layer 402, and the material of the third conductive film layer 403 may be the same as the material of the second conductive film layer 402, including at least one of Mg and Ag. .

In step S1044, a fourth conductive film layer is formed on the light-emitting function film layer in the first display area and the third conductive film layer in the second display area.

The seventh intermediate structure can be obtained through step S1044, and a schematic structural diagram of the seventh intermediate structure shown in FIG. 23. As shown in FIG. 23, the fourth conductive film layer 404 covers the light emitting film layer 3 of the first display area A and the third conductive film layer 403 of the second display area B.

Therefore, in the conductive layer 4 obtained through step S1043 and step S1044, the portion of the conductive layer 4 located in the first display area A is only the fourth conductive film layer 404, and the portion of the conductive layer 4 located in the second display area B includes the third conductive film. Layer 403 and fourth conductive film layer 404.

The material of the fourth conductive film layer 404 may be indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, or silver-doped indium zinc oxide. Alternatively, the material of the fourth conductive film layer 404 includes at least one of Mg and Ag. Preferably, the material of the third conductive film layer 403 includes Mg and Ag, and the ratio of the quality of Mg to the quality of Ag ranges from 1:4 to 1:20. The thickness of the fourth conductive film layer 404 may be the same as the thickness of the first conductive film layer 401, and the material of the fourth conductive film layer 404 may be the same as the material of the first conductive film layer 401.

In the display panel prepared by the manufacturing method provided by the embodiment of the present invention, the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area, so that the light transmittance of the first display area is greater than that of the second display area. The light transmittance of the area, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.

The display panel prepared by the foregoing manufacturing method belongs to the same concept as the display panel 100 provided in the foregoing embodiment. For related details, refer to the foregoing embodiment of the display panel 100, which will not be repeated here.

An embodiment of the present invention also provides an array substrate, which includes a transparent OLED substrate 300. As shown in FIG. 24, the transparent OLED substrate 300 or the transparent first OLED substrate includes a substrate 1'and is formed on the The driving circuit layer 2'on the substrate 1'and the light-emitting function film layer 3'formed on the driving circuit layer 2'. Wherein, the driving circuit layer 2'includes a plurality of first driving circuit units, the first driving circuit unit includes a storage capacitor and a first transistor, and the storage capacitor includes a first plate and a second plate. Referring to FIGS. 25 and 26, the first driving circuit unit has a first conductive layer 91', a part 912' of the first conductive layer 91' serves as the first plate, and the other part 911' serves as the The gate of the first transistor.

In the transparent OLED substrate 300, since a part of the first conductive layer serves as the first electrode plate and the other part serves as the gate electrode of the first transistor, the gate electrode of the first transistor and the first electrode of the storage capacitor When the plate and the connection between the two can be completed through the same process step, there is no need to prepare the connection structure between the two after the gate of the first transistor and the first plate of the storage capacitor are formed, which can simplify the first drive The manufacturing process of the circuit unit.

Wherein, as shown in FIGS. 25 and 26, the driving circuit layer 2'of the transparent OLED substrate 300 has a gate insulating layer 24', a capacitor insulating layer 25' on the gate insulating layer 24', and a capacitor insulating layer. The interlayer dielectric layer 26' on 25', the planarization layer 27' on the interlayer dielectric layer 26', and the first conductive layer 91' is located between the gate insulating layer 24' and the capacitor insulating layer 25'.

The first driving circuit unit may be a 2TIC driving circuit. When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer of the transparent OLED substrate 300 may further include power lines, data lines, scan lines, and anode layers corresponding to the first driving circuit units one-to-one. Referring to Figure 25, the driving circuit layer of the transparent OLED substrate 300 also has an anode layer 21' and a second conductive layer 92' on the planarization layer 27' corresponding to the first driving circuit unit one to one. A part 921' of the second conductive layer 92' serves as the second plate of the storage capacitor, and the other part 922' serves as the power line; the first driving circuit unit further includes a second transistor, and the first transistor The source of the second transistor is connected to the second conductive layer 92', the drain of the first transistor is connected to the corresponding anode layer, the gate of the second transistor is connected to the scan line, and the second The drain of the transistor is connected to the first conductive layer, and the source of the second transistor is connected to the data line.

The drive circuit layer 2'of the transparent OLED substrate 300 shown in FIG. 25 is in addition to the first conductive layer 91', the second conductive layer 92', the anode layer 23', the gate insulating layer 24', and the capacitor insulating layer shown in the figure. The layer 25', the interlayer dielectric layer 26' and the planarization layer 27' also include data lines, scan lines, the source and drain of the first transistor, the gate, source and drain of the second transistor, but These structures are not shown in Figure 25.

When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as shown in Figure 7. The structure of the first driving circuit unit of the first OLED substrate included in the array substrate is 2T1C and the structure of the first display panel described above. When the driving circuit unit is 2T1C, the structure is the same, so it will not be repeated here.

The materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line, and the anode layer are made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the drive circuit layer of the transparent OLED substrate or the first OLED substrate included in the array substrate can be higher, and the light transmittance of the transparent OLED substrate or the first OLED substrate can be improved.

The first driving circuit unit may be a 3TIC driving circuit. When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer may include a power supply line, a data line, a first scan line, a second scan line, a reference potential line, and one-to-one correspondence with a plurality of first driving circuit units. Anode layer. As shown in FIG. 26, the driving circuit layer 2'has a third conductive layer 93' on the planarization layer 27', a part 932' of the third conductive layer 93' serves as the second plate, and the other part 931' serves as the corresponding anode layer. With this arrangement, when the anode layer, the second plate of the storage capacitor and the connection between the two can be completed through the same process step, there is no need to prepare the connection between the two after the anode layer and the second plate of the storage capacitor are formed. The structure can simplify the manufacturing process flow of the first driving circuit unit.

The drive circuit layer 2'of the transparent OLED substrate or the first OLED substrate shown in FIG. 26 is in addition to the first conductive layer 91', the third conductive layer 93', the gate insulating layer 24', and the capacitor insulating layer shown in the figure. 25', the interlayer dielectric layer 26' and the planarization layer 27', further including power lines, data lines, first scan lines, second scan lines, reference potential lines, the source and drain of the first transistor, and the third The gate, source, and drain of the transistor, and the gate, source, and drain of the fourth transistor, but these structures are not shown in Figure 26. When the first drive circuit unit is a 3TIC drive circuit, its circuit diagram is shown in Figure 9. The structure when the first driving circuit unit of the first OLED substrate included in the array substrate is 3T1C is the same as the structure when the first driving circuit unit of the display panel is 3T1C described above, and will not be repeated here.

Preferably, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, the first scan line, and the second scan The wire, the reference potential wire and the anode layer are made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the transparent OLED substrate of the array substrate or the driving circuit layer of the first OLED substrate can be higher, and the light transmittance of the transparent OLED substrate or the first OLED substrate can be improved.

The array substrate provided by the embodiment of the present invention includes a first OLED substrate and a second OLED substrate. The first OLED substrate is a transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate; The second OLED substrate shares the same substrate 1, and the light-emitting function film layer of the first OLED substrate and the light-emitting function film layer of the second OLED substrate are formed in the same process.

In the array substrate provided by the embodiment of the present invention, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate of the first transistor and the first plate of the storage capacitor are formed , Can simplify the manufacturing process of the first driving circuit unit. The first OLED substrate (ie, the above-mentioned transparent OLED substrate) and the second OLED substrate include: a substrate; a driving circuit layer formed on the substrate; a light-emitting functional film layer, the light-emitting functional film A layer is formed on the driving circuit layer.

Wherein, the first OLED substrate of the array substrate may be at least partially surrounded by the second OLED substrate.

In an embodiment, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit unit is greater than the number of transistors included in the first driving circuit unit. quantity. Optionally, the first driving circuit unit may be a 2TIC driving circuit (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit). The circuit unit includes three transistors and a storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (that is, the second driving circuit unit includes seven transistors and a storage capacitor), a 5TIC circuit (that is, the second driving circuit unit includes five transistors and a storage capacitor), 4TIC circuit (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. With this arrangement, the structural complexity of the first driving circuit unit is less than the structural complexity of the second driving circuit unit, so that the conductive layer of the driving circuit layer of the first OLED substrate has a smaller area, thereby improving the light transmission of the first OLED substrate rate.

An embodiment of the present invention also provides a display screen, the display screen comprising the above-mentioned array substrate and a packaging structure, the packaging structure is disposed on the array substrate, and a photosensitive element can be disposed under the first OLED substrate of the array substrate .

In the display screen provided by the embodiment of the present invention, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate of the first transistor and the first plate of the storage capacitor are formed Therefore, the manufacturing process flow of the first driving circuit unit can be simplified, thereby simplifying the manufacturing process flow of the driving circuit layer of the first OLED substrate.

Wherein, the encapsulation layer may be a thin-film encapsulation structure, and the thin-film encapsulation structure may include alternately stacked organic material layers and inorganic material layers, wherein the organic material layer and the inorganic material layer are both transparent materials, and the material of the inorganic material layer may be, for example, SiO _2. SiNx and Al ₂ O _3, etc. The material of the organic material layer can be, for example, PI, PET, etc. The packaging layer may also be a glass cover plate or a glass powder packaging structure.

An embodiment of the present invention also provides a display device, which includes an equipment body and the above-mentioned display screen. The device body has a device area, and the display screen covers the device body. Wherein, the device area is located under the first OLED substrate, and a photosensitive element that collects light through the first OLED substrate is arranged in the device area.

Wherein, the photosensitive element may include a camera and/or a light sensor. Devices other than photosensitive elements, such as gyroscopes or earpieces, can also be set in the device area.

The device area may be a grooved area, and the first OLED substrate of the display screen may be arranged in a fit manner corresponding to the grooved area, so that the photosensitive element can collect external light through the first OLED substrate.

In the above-mentioned display device, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of the driving circuit unit further simplifies the manufacturing process flow of the driving circuit layer of the first OLED substrate.

The above-mentioned electronic devices such as display devices may be digital devices such as mobile phones, tablets, palmtop computers, and ipads.

In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or intervening layers may be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element, or there may be more than one intervening layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or more than one intervening layer may also be present. Or components. Similar reference numerals indicate similar elements throughout.

100‧‧‧Display Panel

A‧‧‧First display area

B‧‧‧Second display area

1‧‧‧Substrate

2‧‧‧Drive circuit layer

3‧‧‧Light-emitting functional film

4‧‧‧Conductive layer

d1,d2‧‧‧thickness

11‧‧‧First substrate

12‧‧‧Second substrate

111‧‧‧Transparent material layer

112‧‧‧Layer

5‧‧‧Protection layer

Claims (9)

A display panel includes a first display area and a second display area. The display panel further includes a substrate. The substrate includes a first substrate and a second substrate. Display area, the second substrate is located in the second display area, the light transmittance of the first substrate is greater than the light transmittance of the second substrate; a driving circuit layer, the driving circuit layer is formed on the substrate A light-emitting function film layer, the light-emitting function film layer is formed on the drive circuit layer; and a conductive layer, the conductive layer is formed on the light-emitting function film layer; wherein the substrate, the drive circuit Layer, the light-emitting function layer and the conductive layer are located in the first display area and the second display area, and the thickness of the conductive layer located in the first display area is smaller than that of the conductive layer located in the second display area. The thickness of the layer, wherein the first substrate includes at least a transparent material layer, and the thickness of the first substrate is the same as the thickness of the second substrate. The display panel according to item 1 of the scope of patent application, wherein the material of the conductive layer in the first display area is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium oxide Zinc; or, the material of the conductive layer located in the first display area includes at least one of Mg and Ag. The display panel according to claim 1, wherein the conductive layer is a cathode layer; the light-emitting functional film layer includes an organic light-emitting material and an electron injection layer located between the organic light-emitting material and the conductive layer The material of the electron injection layer includes Ag, and also includes at least one of Mg, K, Li, and Cs; and the ratio of the quality of Ag in the electron injection layer to the total quality of the electron injection layer is in the range of 1: 5~1:21. The display panel according to the first item of the scope of patent application, wherein the ratio of the thickness of the conductive layer in the first display area to the thickness of the conductive layer in the second display area ranges from 0.25:1 to 0.85:1; And the thickness of the conductive layer located in the first display area is in the range of 5-10nm, located in the second display area The thickness of the conductive layer ranges from 12 to 20 nm. The display panel according to the first item of the scope of patent application, wherein the second substrate is a stack of multiple organic material layers and multiple inorganic material layers. The display panel according to item 5 of the scope of patent application, wherein the first substrate further includes a stack of an organic material layer and an inorganic material layer, and the stack of the first substrate and the second substrate The laminate of the substrate shares a part of the film material. The display panel according to item 6 of the scope of patent application, wherein the stack of the first substrate includes a first organic layer and a first inorganic layer on the first organic layer, and the second substrate The laminate includes a second organic layer, a second inorganic layer, a third organic layer, and a third inorganic layer that overlap from bottom to top, and the first organic layer and part of the third organic layer share the same film material , The first inorganic layer and the third inorganic layer share the same film material, the thickness of the first organic layer is less than the thickness of the third organic layer, and the thickness of the first inorganic layer is equal to the thickness of the first The thickness of the three inorganic layers; the transparent material layer of the first substrate is arranged below the stack of the first substrate, and the lower end surface of the transparent material layer of the first substrate and the second substrate The bottom face of the bottom is flush. A display device includes: a device body having a device area; the display panel as described in item 1 of the scope of patent application, covering the device body; wherein the device area is located below the first display area, and The device area is provided with a photosensitive element that collects light through the first display area. A method for preparing a display panel, the display panel having a first display area and a second display area, the preparation method includes: forming a substrate, wherein forming the substrate includes: forming a substrate layer; Forming a groove at a position corresponding to the first display area; and forming a transparent material layer in the groove, wherein the thickness of the portion of the substrate corresponding to the first display area is the same as that of the The thickness of the part of the substrate corresponding to the second display area; forming a driving circuit layer on the substrate; forming a light-emitting function film layer on the driving circuit layer; forming a conductive film on the light-emitting function film layer Layer, the conductive layer located in the first display area The thickness is smaller than the thickness of the conductive layer located in the second display area.

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