TWI709127B - Display panel and manufacture method of the same, and display device - Google Patents
Display panel and manufacture method of the same, and display device Download PDFInfo
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本發明涉及顯示技術領域,尤其涉及一種顯示面板及其製備方法、顯示裝置。 The present invention relates to the field of display technology, in particular to a display panel, a preparation method thereof, and a display device.
隨著電子設備的快速發展,使用者對屏占比的要求越來越高,使得電子設備的全面屏顯示受到業界越來越多的關注。電子設備如手機、平板電腦等,由於需要集成諸如前置攝像頭、聽筒以及紅外感應元件等,故而可通過在顯示幕上開槽(Notch),在開槽區域設置攝像頭、聽筒以及紅外感應元件等,但開槽區域並不能用來顯示畫面,如劉海屏。或者採用在螢幕上開孔的方式來設置攝像頭等,然而,對於實現攝像功能的電子設備來說,外界光線可通過螢幕上的開孔處進入位於螢幕下方的感光元件,引起不良的成像效果。如此,這些電子設備的顯示幕均不是全面屏,並不能在整個螢幕的各個區域均進行顯示,如在攝像頭區域不能顯示畫面。 With the rapid development of electronic devices, users have higher and higher requirements for the screen-to-body ratio, making the full-screen display of electronic devices attract more and more attention in the industry. Electronic devices such as mobile phones, tablet computers, etc., need to integrate front cameras, earpieces, and infrared sensing elements, so you can slot on the display screen (Notch), and set up cameras, earpieces and infrared sensing elements in the slotted area , But the slotted area cannot be used to display pictures, such as Liu Haiping. Alternatively, a camera can be set by opening a hole on the screen. However, for electronic devices that implement the camera function, external light can enter the photosensitive element located below the screen through the opening on the screen, causing poor imaging effects. As such, the display screens of these electronic devices are not full screens, and cannot be displayed in all areas of the entire screen, for example, images cannot be displayed in the camera area.
根據本發明實施例的第一方面,提供了一種顯示面板,所述顯示面板具有第一顯示區及第二顯示區,所述顯示面板包括位於所述第一顯示區及所述第二顯示區的襯底、驅動電路層、發光功能膜層及導電層;所述驅動電路層形成於所述襯底上;所述發光功能膜層形成於所述驅動電路層上;所述導電層形成於所述發光功能膜層上,位於所述第一顯示區的導電層的厚度小於位於所述第二顯示區的導電層的厚度。 According to a first aspect of the embodiments of the present invention, there is provided a display panel, the display panel having a first display area and a second display area, and the display panel includes a display panel located in the first display area and the second display area. The substrate, the driving circuit layer, the light-emitting function film layer and the conductive layer; the driving circuit layer is formed on the substrate; the light-emitting function film layer is formed on the driving circuit layer; the conductive layer is formed on On the light-emitting functional film layer, the thickness of the conductive layer located in the first display area is smaller than the thickness of the conductive layer located in the second display area.
根據本發明實施例的第二方面,提供了一種顯示裝置,包括:設備本體,具有器件區;上述的顯示面板,覆蓋在所述設備本體上;其中,所述器件區位於所述第一顯示區下方,且所述器件區中設置有透過 所述第一顯示區進行光線採集的感光元件。 According to a second aspect of the embodiments of the present invention, there is provided a display device, including: a device body having a device area; the above-mentioned display panel, covering the device body; wherein the device area is located in the first display Under the area, and in the device area, a photosensitive element that transmits light through the first display area is arranged in the device area.
上述的顯示裝置,由於其包括的顯示面板的位於第一顯示區的導電層的厚度小於位於第二顯示區的導電層的厚度,可使得第一顯示區的透光率大於第二顯示區的透光率,從而設置於第一顯示區下方的感光元件可接收到足夠的光線,保證感光元件可正常工作。 In the above display device, since the thickness of the conductive layer located in the first display area of the display panel is smaller than the thickness of the conductive layer located in the second display area, the light transmittance of the first display area can be made greater than that of the second display area. Light transmittance, so that the photosensitive element arranged below the first display area can receive enough light to ensure that the photosensitive element can work normally.
根據本發明實施例的協力廠商面,提供了一種顯示面板的製備方法,所述顯示面板具有第一顯示區及第二顯示區,所述製備方法包括:形成襯底;在所述襯底上形成驅動電路層;在所述驅動電路層上形成發光功能膜層;在所述發光功能膜層上形成導電層,位於所述第一顯示區的導電層的厚度小於位於所述第二顯示區的導電層的厚度。 According to a third-party supplier of an embodiment of the present invention, a method for manufacturing a display panel is provided, the display panel having a first display area and a second display area, and the manufacturing method includes: forming a substrate; Forming a driving circuit layer; forming a light-emitting function film layer on the driving circuit layer; forming a conductive layer on the light-emitting function film layer, and the thickness of the conductive layer in the first display area is smaller than that in the second display area The thickness of the conductive layer.
根據本發明實施例的第四方面,提供了一種陣列基板,所述陣列基板包括透明的第一OLED基板及非透明的第二OLED基板,所述第一OLED基板至少部分被所述第二OLED基板包圍;所述第一OLED基板和所述第二OLED基板包括襯底、形成於所述襯底上的驅動電路層、形成於所述驅動電路層上的發光功能膜層。所述第一OLED基板的所述驅動電路層包括多個第一驅動電路單元,所述第一驅動電路單元包括存儲電容及第一電晶體,所述存儲電容包括第一極板與第二極板;所述第一驅動電路單元具有第一導電層,所述第一導電層的一部分作為所述第一極板,另一部分作為所述第一電晶體的閘極。 According to a fourth aspect of the embodiments of the present invention, there is provided an array substrate, the array substrate includes a transparent first OLED substrate and a non-transparent second OLED substrate, the first OLED substrate is at least partially covered by the second OLED substrate Surrounded by a substrate; the first OLED substrate and the second OLED substrate include a substrate, a driving circuit layer formed on the substrate, and a light-emitting function film layer formed on the driving circuit layer. The driving circuit layer of the first OLED substrate includes a plurality of first driving circuit units, the first driving circuit unit includes a storage capacitor and a first transistor, and the storage capacitor includes a first electrode plate and a second electrode. The first drive circuit unit has a first conductive layer, a part of the first conductive layer is used as the first electrode plate, and the other part is used as the gate electrode of the first transistor.
上述的陣列基板,由於其第一OLED基板的第一導電層的一部分作為存儲電容的第一極板,另一部分作為第一電晶體的閘極,則第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。 In the above-mentioned array substrate, since a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor, the gate of the first transistor and the storage capacitor When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of a driving circuit unit.
根據本發明實施例的第五方面,提供了一種顯示幕,所述顯示幕包括上述的陣列基板及封裝結構,所述封裝結構設置在所述陣列基板的遠離所述襯底的一側上。 According to a fifth aspect of the embodiments of the present invention, there is provided a display screen including the above-mentioned array substrate and a packaging structure, the packaging structure being disposed on a side of the array substrate away from the substrate.
上述的顯示幕,由於其第一OLED基板的第一導電層的一部分作為存儲電容的第一極板,另一部分作為第一電晶體的閘極,則第一 電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程,進而簡化第一OLED基板的驅動電路層的製備工藝流程。 In the above-mentioned display screen, because part of the first conductive layer of the first OLED substrate serves as the first plate of the storage capacitor, and the other part serves as the gate of the first transistor, the gate of the first transistor and the storage capacitor When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of the driving circuit unit further simplifies the manufacturing process flow of the driving circuit layer of the first OLED substrate.
根據本發明實施例的第六方面,提供了一種顯示裝置,所述顯示裝置包括:設備本體,具有器件區;上述的顯示幕,覆蓋在所述設備本體上;其中,所述器件區位於所述第一OLED基板下方,且所述器件區中設置有透過所述第一OLED基板進行光線採集的感光元件。 According to a sixth aspect of the embodiments of the present invention, there is provided a display device, the display device comprising: a device body having a device area; the above-mentioned display screen covering the device body; wherein the device area is located at the device body Below the first OLED substrate, and in the device area, a photosensitive element that collects light through the first OLED substrate is arranged.
100‧‧‧顯示面板 100‧‧‧Display Panel
A‧‧‧第一顯示區 A‧‧‧First display area
B‧‧‧第二顯示區 B‧‧‧Second display area
1,1’‧‧‧襯底 1,1’‧‧‧Substrate
2,2’‧‧‧驅動電路層 2,2’‧‧‧Drive circuit layer
3,3’‧‧‧發光功能膜層 3,3’‧‧‧Light-emitting functional film
4‧‧‧導電層 4‧‧‧Conductive layer
d1,d2‧‧‧厚度 d1,d2‧‧‧thickness
41‧‧‧第一子導電層 41‧‧‧The first sub-conductive layer
42‧‧‧第二子導電層 42‧‧‧Second sub-conductive layer
43‧‧‧第三子導電層 43‧‧‧The third sub-conductive layer
7‧‧‧像素限定層 7‧‧‧Pixel limited layer
11‧‧‧第一襯底 11‧‧‧First substrate
12‧‧‧第二襯底 12‧‧‧Second substrate
111‧‧‧透明材料層 111‧‧‧Transparent material layer
112‧‧‧疊層 112‧‧‧Layer
113‧‧‧第一有機層 113‧‧‧First organic layer
114‧‧‧第一無機層 114‧‧‧First inorganic layer
121‧‧‧第二有機層 121‧‧‧Second organic layer
122‧‧‧第二無機層 122‧‧‧Second inorganic layer
123‧‧‧第三有機層 123‧‧‧The third organic layer
124‧‧‧第三無機層 124‧‧‧The third inorganic layer
5‧‧‧保護層 5‧‧‧Protection layer
8‧‧‧緩衝層 8‧‧‧Buffer layer
24,24’‧‧‧閘極絕緣層 24,24’‧‧‧Gate insulation layer
25,25’‧‧‧電容絕緣層 25,25’‧‧‧Capacitor insulation layer
26,26’‧‧‧層間介質層 26,26’‧‧‧Interlayer dielectric layer
27,27’‧‧‧平坦化層 27,27’‧‧‧Planarization layer
21,23,21’‧‧‧陽極層 21,23,21’‧‧‧Anode layer
22‧‧‧透明有機材料膜層 22‧‧‧Transparent organic material film
91,91’‧‧‧第一導電層 91,91’‧‧‧First conductive layer
92,92’‧‧‧第二導電層 92,92’‧‧‧Second conductive layer
T1‧‧‧第一電晶體 T1‧‧‧First transistor
T2‧‧‧第二電晶體 T2‧‧‧Second Transistor
C‧‧‧存儲電容 C‧‧‧Storage capacitor
D2‧‧‧第二極板 D2‧‧‧Second Plate
D1‧‧‧第一極板 D1‧‧‧First plate
93,93’‧‧‧第三導電層 93,93’‧‧‧The third conductive layer
T3‧‧‧第三電晶體 T3‧‧‧Third Transistor
T4‧‧‧第四電晶體 T4‧‧‧Fourth Transistor
200‧‧‧顯示裝置 200‧‧‧Display device
201‧‧‧設備本體 201‧‧‧Equipment body
202‧‧‧器件區 202‧‧‧Device area
203‧‧‧感光元件 203‧‧‧Photosensitive element
101‧‧‧襯底層 101‧‧‧Substrate layer
102‧‧‧凹槽 102‧‧‧Groove
401‧‧‧第一導電膜層 401‧‧‧First conductive film layer
402‧‧‧第二導電膜層 402‧‧‧Second conductive film layer
403‧‧‧第三導電膜層 403‧‧‧The third conductive film layer
404‧‧‧第四導電膜層 404‧‧‧The fourth conductive film layer
300‧‧‧透明OLED基板 300‧‧‧Transparent OLED substrate
912,921,932,912’,921’,932’‧‧‧一部分 Part of 912,921,932,912’,921’,932’‧‧‧
911,922,931,911’,922’,931’‧‧‧另一部分 911,922,931,911’,922’,931’‧‧‧ another part
S101,S102,S103,S104,S1011,S1012,S1013,S1014,S1015,S1041,S1042,S1043,S1044‧‧‧步驟 S101,S102,S103,S104,S1011,S1012,S1013,S1014,S1015,S1041,S1042,S1043,S1044‧‧‧Step
第1圖是本發明實施例提供的顯示面板的俯視圖。 Figure 1 is a top view of a display panel provided by an embodiment of the present invention.
第2圖為第1圖所示的顯示面板沿CC’線進行剖切的剖視圖。 Figure 2 is a cross-sectional view of the display panel shown in Figure 1 taken along line CC'.
第3圖是第1圖所示的一種顯示面板沿CC’線進行剖切的部分剖視圖。 Figure 3 is a partial cross-sectional view of the display panel shown in Figure 1 taken along line CC'.
第4圖是第1圖所示的顯示面板的襯底的剖視圖。 Fig. 4 is a cross-sectional view of the substrate of the display panel shown in Fig. 1.
第5圖是第1圖所示的另一種顯示面板沿CC’線進行剖切的部分剖視圖。 Fig. 5 is a partial cross-sectional view of another display panel shown in Fig. 1, taken along line CC'.
第6圖為本發明實施例提供的一種顯示面板的第一顯示區的剖視圖。 FIG. 6 is a cross-sectional view of a first display area of a display panel according to an embodiment of the present invention.
第7圖是本發明實施例提供的一種第一驅動電路單元的電路圖。 FIG. 7 is a circuit diagram of a first driving circuit unit according to an embodiment of the present invention.
第8圖是本發明實施例提供的另一種顯示面板的第一顯示區的剖視圖。 FIG. 8 is a cross-sectional view of the first display area of another display panel provided by an embodiment of the present invention.
第9圖是本發明實施例提供的另一種第一驅動電路單元的電路圖。 FIG. 9 is a circuit diagram of another first driving circuit unit provided by an embodiment of the present invention.
第10圖是本發明實施例提供的顯示裝置的側視圖。 Figure 10 is a side view of a display device provided by an embodiment of the present invention.
第11圖是第10圖所示的顯示裝置的設備本體的結構示意圖。 Fig. 11 is a schematic diagram of the structure of the main body of the display device shown in Fig. 10.
第12圖是本發明實施例提供的顯示面板的製備方法的流程圖。 FIG. 12 is a flowchart of a manufacturing method of a display panel provided by an embodiment of the present invention.
第13圖是第12圖中的形成襯底的方法流程圖。 Fig. 13 is a flowchart of the method of forming a substrate in Fig. 12.
第14圖是本發明實施例提供的襯底層的結構示意圖。 Figure 14 is a schematic diagram of the structure of the substrate layer provided by an embodiment of the present invention.
第15圖是本發明實施例提供的第一中間結構的結構示意圖。 Figure 15 is a schematic structural diagram of a first intermediate structure provided by an embodiment of the present invention.
第16圖是本發明實施例提供的第二中間結構的結構示意圖。 Figure 16 is a schematic structural diagram of a second intermediate structure provided by an embodiment of the present invention.
第17圖是本發明實施例提供的第三中間結構的結構示意圖。 Figure 17 is a schematic structural diagram of a third intermediate structure provided by an embodiment of the present invention.
第18圖是本發明實施例提供的在所述發光功能膜層上形成導電層的方 法流程圖。 Figure 18 is a flow chart of a method for forming a conductive layer on the light-emitting function film layer provided by an embodiment of the present invention.
第19圖是本發明實施例提供的第四中間結構的結構示意圖。 Figure 19 is a schematic structural diagram of a fourth intermediate structure provided by an embodiment of the present invention.
第20圖是本發明實施例提供的第五中間結構的結構示意圖。 Figure 20 is a schematic structural diagram of a fifth intermediate structure provided by an embodiment of the present invention.
第21圖是本發明實施例提供的在所述發光功能膜層上形成導電層的又 一種方法流程圖。 Fig. 21 is a flowchart of another method for forming a conductive layer on the light-emitting function film layer provided by an embodiment of the present invention.
第22圖是本發明實施例提供的第六中間結構的結構示意圖。 Figure 22 is a schematic structural diagram of a sixth intermediate structure provided by an embodiment of the present invention.
第23圖是本發明實施例提供的第七中間結構的結構示意圖。 Figure 23 is a schematic structural diagram of a seventh intermediate structure provided by an embodiment of the present invention.
第24圖是本發明實施例提供的透明OLED基板的結構示意圖。 Figure 24 is a schematic structural diagram of a transparent OLED substrate provided by an embodiment of the present invention.
第25圖是本發明實施例提供的一種透明OLED基板的剖視圖。 FIG. 25 is a cross-sectional view of a transparent OLED substrate provided by an embodiment of the present invention.
第26圖是本發明實施例提供的另一種透明OLED基板的剖視圖。 FIG. 26 is a cross-sectional view of another transparent OLED substrate provided by an embodiment of the present invention.
下面結合圖式,對本發明實施例中的顯示面板及其製備方法進行詳細說明。在不衝突的情況下,下述的實施例及實施方式中的特徵可以相互補充或相互組合。 The display panel and the manufacturing method thereof in the embodiment of the present invention will be described in detail below in conjunction with the drawings. In the case of no conflict, the following embodiments and features in the implementation can be mutually supplemented or combined.
在諸如手機和平板電腦等智慧電子設備上,由於需要集成諸如前置攝像頭、光線感應器等感光元件,為了實現全面屏,則可將感光元件設置在電子設備的顯示面板的背光面。然而,顯示面板的透光率較低,設置在顯示面板的背光面的感光元件難以接收到足夠的光線,導致感光元件無法正常工作,例如設置在顯示面板的背光面的攝像頭採集的光線較少,拍攝的圖像的品質較差。 In smart electronic devices such as mobile phones and tablet computers, since it is necessary to integrate photosensitive elements such as front cameras and light sensors, in order to achieve a full screen, the photosensitive elements can be arranged on the backlight surface of the display panel of the electronic device. However, the light transmittance of the display panel is low, and the photosensitive element arranged on the backlight surface of the display panel cannot receive enough light, which causes the photosensitive element to not work normally. For example, a camera arranged on the backlight surface of the display panel collects less light. , The quality of the captured image is poor.
出現這種問題的原因在於,顯示面板的膜層的厚度大而導致其透光率低。 The reason for this problem is that the thickness of the film layer of the display panel is large, resulting in low light transmittance.
為解決上述問題,本發明實施例提供了一種顯示面板。如第1圖和第2圖所示,所述顯示面板100具有第一顯示區A及第二顯示區B,所述第一顯示區A下方可設置感光元件。所述顯示面板100包括位於第一顯示區A和第二顯示區B的襯底1、驅動電路層2、發光功能膜層3及導電層4。所述驅動電路層2形成於所述襯底1上,所述發光功能膜層3形成於所述驅動電路層2上,所述導電層4形成於所述發光功能膜層3上,位於所述第一顯示區A的導電層的厚度d1小於位於所述第二顯示區B的導電層 的厚度d2。 In order to solve the above-mentioned problem, an embodiment of the present invention provides a display panel. As shown in FIG. 1 and FIG. 2, the
在本發明實施例中,為描述方便,將由襯底1指向驅動電路層2的方向定義為上,將由驅動電路層2指向襯底1的方向定義為下,以此確定出上下方向。不同的方向定義方式並不會影響工藝的實質操作內容以及產品的實際形態。 In the embodiment of the present invention, for the convenience of description, the direction from the
本發明實施例提供的顯示面板100,由於位於第一顯示區A的導電層的厚度小於位於第二顯示區B的導電層的厚度,可使得第一顯示區A的透光率大於第二顯示區B的透光率,從而設置於第一顯示區A下方的感光元件可接收到足夠的光線,保證感光元件可正常工作。 In the
所述第二顯示區B可至少部分包圍所述第一顯示區A,如第1圖所示的顯示面板100中,所述第二顯示區B全部包圍所述第一顯示區A,在其他實施例中,所述第二顯示區B可部分包圍所述第一顯示區A。所述第二顯示區B為顯示面板100的主要顯示區域,通常佔據顯示面板90%以上的面積,第一顯示區A的下方通常可用於設置攝像頭、光線感測器等感光器件。 The second display area B may at least partially surround the first display area A. In the
在一個實施例中,參見第3圖,導電層4位於所述第一顯示區A的部分為第一子導電層41,導電層4位於第二顯示區的部分包括第二子導電層42和位於第二子導電層42上的第三子導電層43。 In one embodiment, referring to FIG. 3, the portion of the
其中,第一子導電層41的材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅;或者,第一子導電層41的材料包括Mg和Ag中的至少一種。優選的,第一子導電層41包括Mg和Ag兩種材料,且Mg的品質與Ag的品質的比例範圍為1:4~1:20。如此設置,可保證第一顯示區A的透光率較大,從而設置在第一顯示區A下方的感測器可接收更多的光線。 Wherein, the material of the first
第二子導電層42和第三子導電層43中的一層可與第一子導電層41的材質相同且在同一工藝步驟中形成。在形成導電層4時,先同時形成第二子導電層42與第一子導電層41,之後再在第二子導電層42上形成第三子導電層43,第二子導電層42與第一子導電層41的材料相同,第三子導電層43的材料可包括Mg和Ag中的至少一種。或者,在形成導電 層4時,首先形成第二子導電層42,再同時形成第一子導電層41和第三子導電層43,第一子導電層41和第三子導電層43的材料相同,第二子導電層42的材料可包括Mg和Ag中的至少一種。 One of the second
在一個實施例中,所述導電層4可為陰極層。其中,陰極層可以是面電極,覆蓋顯示面板100的整個區域。也即是,第一子導電層41覆蓋第一顯示區域A,第二子導電層42與第三子導電層43覆蓋第二顯示區B。 In an embodiment, the
在一個實施例中,位於所述第一顯示區A的第一子導電層41的厚度與位於第二顯示區B的導電層的厚度(也即是第二子導電層42和第三子導電層43的總厚度)的比例範圍可為0.25:1~0.85:1,例如可為0.3、0.5、0.7、0.85等。其中,本發明實施例中,厚度指的是膜層在上下方向上的尺寸。 In one embodiment, the thickness of the first
進一步地,位於所述第一顯示區A的第一子導電層41的厚度範圍可為5~10nm,位於第二顯示區B的第二子導電層42和第三子導電層43的總厚度的範圍可為12~20nm。如此設置,可保證第一子導電層41的透光率較好,同時保證導電層4的導電性能及機械性能良好,確保顯示面板100可正常工作。 Further, the thickness of the first
在一個實施例中,發光功能膜層3可包括有機發光材料和公共層。其中,公共層可包括電子注入層、電子傳輸層、空穴注入層和空穴傳輸層。電子注入層及電子傳輸層位於有機發光材料和導電層4之間,空穴注入層和空穴傳輸層位於驅動電路層2與發光功能膜層3之間。其中,電子注入層、電子傳輸層、空穴注入層和空穴傳輸層均為整層設置,覆蓋第一顯示區A及第二顯示區B。 In an embodiment, the light-emitting
進一步地,所述電子注入層的材料包括Ag,以及Mg、K、Li、Cs中的至少一種。優選的,所述電子注入層中Ag的品質與所述電子注入層的總品質的比例範圍為1:5~1:21,也即是電子注入層中Ag的品質與其他組分的品質的比值範圍為1:4~1:20。 Further, the material of the electron injection layer includes Ag, and at least one of Mg, K, Li, and Cs. Preferably, the ratio of the quality of Ag in the electron injection layer to the total quality of the electron injection layer ranges from 1:5 to 1:21, that is, the quality of Ag in the electron injection layer and the quality of other components The ratio range is 1:4~1:20.
顯示面板100還可包括與發光功能膜層3同層設置的像素限定層7,像素限定層7上可開設有像素開口,發光功能膜層3的有機發光材 料設置在像素開口內。 The
在一個實施例中,再次參見第2圖,所述襯底1可包括第一襯底11及第二襯底12,所述第一襯底11位於第一顯示區A,所述第二襯底12位於第二顯示區B,所述第一襯底11的透光率大於第二襯底12的透光率。如此,可使得第一顯示區A的透光率較大,更利於設置在第一顯示區A下方的感光元件接收較多的光線。 In one embodiment, referring again to FIG. 2, the
所述襯底1可為柔性襯底或剛性襯底。剛性襯底例如可以是玻璃基板、石英襯底或者塑膠襯底等透明襯底。 The
所述襯底1為柔性襯底時,參見第4圖,所述第二襯底12可為多層有機材料層和多層無機材料層交疊的疊層;所述第一襯底至少包括透明材料層111,所述第一襯底11的厚度與所述第二襯底12的厚度相同。第一襯底11的厚度與所述第二襯底12的厚度相同時,利於將顯示面板100整體設置為同樣的厚度,從而使顯示面板100整體更加美觀。 When the
為保證第一襯底11的透光率較高,透明材料層111的材料需採用高透光率的材料。優選的,所述第一襯底11的透明材料層111的透光率可大於90%。進一步地,第一襯底11的透明材料層111的材料可包括PET(聚對苯二甲酸乙二酯)、PC(聚碳酸酯)中的至少一種。PET及PC的透光率均為92%,可使得第一襯底11的透光率較高。 In order to ensure a high light transmittance of the
為了保證顯示面板100工作時第二顯示區B的亮度較高,需使第二顯示區B的透光率較低,以減小第二顯示區B的亮度損失。所述第二顯示區B的第二襯底12的透光率可在30%-60%以內,以降低第二顯示區B的透光率,提高第二顯示區B在顯示時的亮度。 In order to ensure that the brightness of the second display area B is high when the
其中,第二襯底12的有機材料層的材質可為PI(聚醯亞胺),PI的折射率與PET及PC的折射率差別不大,則第一襯底11與第二襯底12的折射率接近,從而可避免因第一襯底11與第二襯底12的折射率不同而導致第一顯示區A與第二顯示區B的顯示效果差別較大,使顯示面板100的整體效果比較一致。其中,第二襯底12的無機材料層的材料可為SiO2、SiNx等。 Wherein, the material of the organic material layer of the
進一步地,所述第一襯底11還包括有機材料層與無機材料 層交疊的疊層112,所述第一襯底11的疊層112與所述第二襯底12的疊層共用一部分膜層材料。具體地,第一襯底11的有機材料層與第二襯底12的位於同層的有機材料層共用膜層材料,第一襯底的無機材料層與第二襯底12的位於同層的無機材料層共用膜層材料。 Further, the
再次參見第4圖,所述第一襯底11的疊層112可包括第一有機層113和位於所述第一有機層113上的第一無機層114,所述第二襯底12的疊層包括由下至上依次交疊的第二有機層121、第二無機層122、第三有機層123和第三無機層124,所述第一有機層113與部分所述第三有機層123共用同一膜層材料,所述第一無機層114與所述第三無機層124共用同一膜層材料,所述第一有機層113的厚度小於所述第三有機層123的厚度,所述第一無機層114的厚度等於所述第三無機層124的厚度。其中,第一無機層114與所述第三無機層124共用同一膜層材料指的是二者材料相同且在同一工藝步驟中形成,第一有機層113與部分所述第三有機層123共用同一膜層材料指的是二者的材料相同且同時形成。形成第一有機層113與第三有機層123時,可先同時形成同樣厚度的有機材料層,之後將位於第一顯示區A的有機材料層部分地刻蝕掉,即可得到第一有機層113和第三有機層123。 Referring again to FIG. 4, the
所述第一襯底11的透明材料層111可設置在所述第一襯底11的疊層112的下方,且所述第一襯底11的透明材料層111的下端面與所述第二襯底12的下端面齊平。更進一步地,第一襯底11的疊層112的上端面與第二襯底12的上端面齊平,則第一襯底11的總厚度與第二襯底12的總厚度相同,從而更利於將顯示面板100的厚度整體上大致相同,利於提高顯示面板100的美觀性。 The
在一個實施例中,再次參見第4圖,第一襯底11的下方、第二襯底12的下方、所述第一襯底11的透明材料層111的側面與所述第二襯底12之間和/或所述第一襯底11的透明材料層111的上端與所述第一襯底11的疊層112之間設置有保護層5。保護層5可對第一襯底11和第二襯底12進行保護,提高顯示面板的機械強度,進而提高顯示面板100的使用壽命。 In one embodiment, referring to FIG. 4 again, the bottom of the
其中,所述保護層5的材料可包括IZO、ITO、SiNx、SiOx中的至少一種。上述材料可使得保護層5的透光率較高,避免保護層5的設置影響第一顯示區A的透光率。 Wherein, the material of the
在一個實施例中,襯底1與驅動電路層2之間可設置有緩衝層8,緩衝層8的材質可為SiNx或SiOx,緩衝層8可提高襯底1與驅動電路層2的粘度性能,避免襯底1與驅動電路層2脫離,提高顯示面板100的使用壽命。 In one embodiment, a
本發明實施例提供的顯示面板100,第一顯示區A的驅動方式可為被動驅動或者主動驅動,第一顯示區A的驅動方式為被動驅動時,第一顯示區A為PMOLED(Passive-Matrix Organic Light-Emitting Diode)顯示區;第一顯示區A的驅動方式為主動驅動時,第一顯示區A為AMOLED(Active-Matrix Organic Light-Emitting Diode)顯示區。第二顯示區B的驅動方式為主動驅動,第二顯示區為AMOLED顯示區。 In the
第3圖是一種顯示面板100的第一顯示區A及部分第二顯示區B沿第1圖中的CC’線剖切的剖視圖。參見第3圖,驅動電路層2位於第二顯示區B的部分可包括閘極絕緣層24、位於閘極絕緣層24上的電容絕緣層25、位於電容絕緣層25上的層間介質層26、位於層間介質層26上的平坦化層27及位於平坦化層27上的陽極層23,以及設置在膜層之間的電晶體(未圖示)和存儲電容(未圖示)。其中,陽極層23的材質可以是兩層氧化銦錫膜層之間設置Ag膜層的夾層結構。 FIG. 3 is a cross-sectional view of the first display area A and part of the second display area B of the
第一顯示區A為PMOLED顯示區時,驅動電路層2位於第一顯示區A中的結構可有如下幾種方式。 When the first display area A is a PMOLED display area, the structure in which the
第一種方式中,參見第3圖,驅動電路層2位於第一顯示區A的部分包括閘極絕緣層24、位於閘極絕緣層24上的電容絕緣層25、位於電容絕緣層25上的層間介質層26、位於層間介質層26上的平坦化層27及位於平坦化層27上的陽極層21。其中,第一顯示區A的閘極絕緣層24、電容絕緣層25、層間介質層26、平坦化層27及位於平坦化層27與第二顯示區B的對應的膜層位於同一層,且在同一工藝中形成。陽極層21的材料可為由透明材料製成的單層膜層結構。進一步地,陽極層21的透明材料的 透明率大於或等於90%。優選的,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。如此可確保第一顯示區A的陽極層21的透光率較高,進而使得第一顯示區A的透光率提高。 In the first way, referring to Figure 3, the portion of the driving
第二種方式中,驅動電路層2位於第一顯示區A的部分可僅包括陽極層21,而不包括其他膜層,如此可使得第一顯示區A的驅動電路層的透光率較高。其中,陽極層21的材料可為由透明材料製成的單層膜層結構。進一步地,製備陽極層21的透明材料的透明率大於或等於90%。優選的,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。 In the second way, the portion of the driving
第三種方式中,參見第5圖(第5圖是一種顯示面板100的第一顯示區A及部分第二顯示區B沿第1圖中的CC’線剖切的剖視圖),驅動電路層2位於所述第一顯示區A的部分可包括陽極層21及設置在陽極層21下的透明有機材料膜層22。其中,透明有機材料膜層22及陽極層21可由透明材料製成,且陽極層21的材料可為由透明材料製成的單層膜層結構。進一步地,透明有機材料膜層22和陽極層21的透光率均大於90%。優選的,製備陽極層21的透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。透明有機材料膜層22的材料可為PET或PC等。更進一步地,所述第二顯示區B的多層絕緣層(即第二顯示區B的閘極絕緣層24、電容絕緣層25、層間介質層26及平坦化層27)的總厚度與第一顯示區A的透明有機材料膜層22的厚度相同,從而使得驅動電路層2位於第一顯示區A的部分與位於第二顯示區B的部分的厚度相同,利於將顯示面板100的厚度整體上大致相同,從而提高顯示面板100的美觀性。 In the third method, referring to FIG. 5 (FIG. 5 is a cross-sectional view of the first display area A and part of the second display area B of the
第一顯示區A為AMOLED顯示區時,驅動電路層2位於第一顯示區A的部分中設置有多個電晶體和多個存儲電容,多個電晶體和多個存儲電容構成多個第一驅動電路單元,用以驅動發光功能膜層3的有機發光材料發光,從而使第一顯示區A顯示。 When the first display area A is an AMOLED display area, the driving
第二顯示區B為AMOLED顯示區,驅動電路層2位於第二顯示區B的部分中設置有多個電晶體和多個存儲電容,多個電晶體和多個存儲電容構成多個第二驅動電路單元,用以驅動發光功能膜層3的有機發 光材料發光,從而使第二顯示區B顯示。 The second display area B is an AMOLED display area. The driving
在一個實施例中,所述第一驅動電路單元的電晶體的數量小於所述第二驅動電路單元的電晶體的數量。可選的,第一驅動電路單元可為2TIC驅動電路,(即第一驅動電路單元中包括兩個電晶體和一個存儲電容),或者第一驅動電路單元可為3TIC驅動電路(即第一驅動電路單元中包括三個電晶體和一個存儲電容)。第二驅動電路單元例如可為7TIC電路(即第二驅動電路單元中包括七個電晶體和一個存儲電容)、5TIC電路(即第二驅動電路單元中包括五個電晶體和一個存儲電容)、4TIC電路(即第二驅動電路單元中包括四個電晶體和一個存儲電容)等。如此設置,第一驅動電路單元的結構複雜度小於第二驅動電路單元的結構複雜度,從而驅動電路層2位於第一顯示區A的部分中的導電層的面積較小,進而可提高第一顯示區A的透光率。 In one embodiment, the number of transistors of the first drive circuit unit is smaller than the number of transistors of the second drive circuit unit. Optionally, the first driving circuit unit may be a 2TIC driving circuit (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit). The circuit unit includes three transistors and a storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (that is, the second driving circuit unit includes seven transistors and a storage capacitor), a 5TIC circuit (that is, the second driving circuit unit includes five transistors and a storage capacitor), 4TIC circuit (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. With this arrangement, the structural complexity of the first driving circuit unit is less than the structural complexity of the second driving circuit unit, so that the area of the conductive layer of the driving
所述第一驅動電路單元的電晶體可包括第一電晶體,所述第一驅動電路單元的存儲電容包括第一極板與第二極板。參見第6圖和第8圖,驅動電路層2位於第一顯示區A的部分具有閘極絕緣層24、位於閘極絕緣層24上的電容絕緣層25、位於電容絕緣層25上的層間介質層26、位於層間介質層26上的平坦化層27、以及位於閘極絕緣層24與電容絕緣層25之間的第一導電層91,所述第一導電層91的一部分912作為所述存儲電容的第一極板,另一部分911作為所述第一電晶體的閘極。如此設置,第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一工藝步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。其中,第一極板可為存儲電容的下極板,第二極板可為存儲電容的上極板。 The transistor of the first drive circuit unit may include a first transistor, and the storage capacitor of the first drive circuit unit includes a first plate and a second plate. Referring to Figures 6 and 8, the portion of the driving
第一驅動電路單元為2TIC驅動電路時,位於所述第一顯示區的驅動電路層還包括電源線、資料線、掃描線及與多個第一驅動電路單元一一對應的陽極層。如第6圖所示,驅動電路層2位於第一顯示區的部分具有位於平坦化層27上的與第一驅動電路單元一一對應的陽極層21及第二導電層92,所述第二導電層92的一部分921作為所述存儲電容的第二極板,另一部分922作為所述電源線。如此設置,電源線、存儲電容的第 二極板及二者之間的連接可通過同一工藝步驟完成時,無需在電源線、存儲電容的第二極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。 When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer located in the first display area further includes power lines, data lines, scan lines, and anode layers corresponding to a plurality of first driving circuit units one-to-one. As shown in Figure 6, the portion of the driving
第6圖所示的驅動電路層2位於第一顯示區A的部分除了圖中所示的第一導電層91、第二導電層92及陽極層21,還包括資料線、掃描線、第一電晶體的源極和汲極、第二電晶體的閘極、源極和汲極,但是第6圖中未示出這些結構。 In addition to the first
第一驅動電路單元為2TIC驅動電路時,其電路圖如第7圖所示,所述第一驅動電路單元的電晶體包括第一電晶體T1及第二電晶體T2,所述第一電晶體T1的源極及存儲電容C的第二極板D2分別與所述電源線連接,所述第一電晶體T1的汲極與對應的OLED(Organic Light-Emitting Diode)的陽極層連接,所述第一電晶體的閘極與存儲電容C的第一極板D1連接;所述第二電晶體T2的閘極與所述掃描線連接,所述第二電晶體T2的汲極分別與存儲電容C的第一極板D1及第一電晶體T1的閘極連接,所述第二電晶體T2的源極與所述資料線連接。 When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as shown in Figure 7. The transistor of the first driving circuit unit includes a first transistor T1 and a second transistor T2. The first transistor T1 The source and the second plate D2 of the storage capacitor C are respectively connected to the power line, the drain of the first transistor T1 is connected to the anode layer of the corresponding OLED (Organic Light-Emitting Diode), and the first The gate of a transistor is connected to the first plate D1 of the storage capacitor C; the gate of the second transistor T2 is connected to the scan line, and the drain of the second transistor T2 is respectively connected to the storage capacitor C The first electrode plate D1 and the gate electrode of the first transistor T1 are connected, and the source electrode of the second transistor T2 is connected to the data line.
由於第二電晶體T2的汲極分別與存儲電容C的第一極板D1及第一電晶體T1的閘極連接,而第一導電層的一部分作為存儲電容C的第一極板D1,另一部分作為所述第一電晶體T1的閘極,則在結構上來說第二電晶體T2的汲極直接與第一導電層連接。由於第一電晶體T1的源極分別與存儲電容C的第二極板D2及所述電源線連接,第二導電層的一部分作為存儲電容C的第二極板D2,另一部分作為所述電源線,則在結構上來說第一電晶體T1的源極與第二導電層連接。 Since the drain of the second transistor T2 is connected to the first plate D1 of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer serves as the first plate D1 of the storage capacitor C. A part is used as the gate of the first transistor T1, and structurally, the drain of the second transistor T2 is directly connected to the first conductive layer. Since the source of the first transistor T1 is respectively connected to the second plate D2 of the storage capacitor C and the power line, a part of the second conductive layer serves as the second plate D2 of the storage capacitor C, and the other part serves as the power supply Line, structurally speaking, the source of the first transistor T1 is connected to the second conductive layer.
在一個實施例中,所述第一電晶體T1、所述第二電晶體T2、所述存儲電容C、所述資料線、所述掃描線及陽極層的材料可由透明材料製成。優選的,所述透明材料的透明率大於或等於90%。進一步地,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。如此,可使得第一顯示區A的驅動電路層的透光率較高,進而使得第一顯示區A的透光率提高。 In one embodiment, the materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line and the anode layer may be made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, and the light transmittance of the first display area A can be improved.
第一驅動電路單元為3TIC驅動電路時,位於所述第一顯示 區A的驅動電路層包括電源線、資料線、第一掃描線、第二掃描線、參考電位線及與多個第一驅動電路單元一一對應的陽極層。如第8圖所示,驅動電路層2位於第一顯示區的部分具有第一導電層91、以及位於平坦化層27上的第三導電層93。所述第三導電層93的一部分932作為所述第二極板,另一部分931作為對應的陽極層。如此設置,陽極層、存儲電容的第二極板及二者之間的連接可通過同一工藝步驟完成時,無需在陽極層、存儲電容的第二極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。 When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer located in the first display area A includes a power supply line, a data line, a first scan line, a second scan line, a reference potential line, and a plurality of first driving circuits. The circuit unit corresponds to the anode layer one by one. As shown in FIG. 8, the portion of the driving
第8圖所示的驅動電路層2位於第一顯示區的部分除了圖中所示的第一導電層91和第三導電層93,還包括電源線、資料線、第一掃描線、第二掃描線、參考電位線、第一電晶體的源極和汲極、第三電晶體的閘極、源極和汲極、第四電晶體的閘極、源極和汲極,但是第8圖中未示出這些結構。 In addition to the first
第一驅動電路單元為3TIC驅動電路時,其電路圖如第9圖所示,所述第一驅動電路單元的電晶體包括第一電晶體T1、第三電晶體T3和第四電晶體T4,所述第三電晶體T3的源極與所述資料線連接,所述第三電晶體T3的閘極與所述第一掃描線連接,所述第三電晶體T3的汲極分別與存儲電容C的第一極板D1及第一電晶體T1的閘極連接,所述第一電晶體T1的汲極與所述電源線連接,所述第一電晶體T1的源極分別與OLED的陽極層、及存儲電容C的第二極板D2連接,所述第四電晶體T4的閘極與所述第二掃描線連接,所述第四電晶體T4的源極與所述參考電位線連接,所述第四電晶體T4的汲極與OLED的陽極層連接。 When the first drive circuit unit is a 3TIC drive circuit, its circuit diagram is as shown in Figure 9. The transistors of the first drive circuit unit include a first transistor T1, a third transistor T3, and a fourth transistor T4. The source of the third transistor T3 is connected to the data line, the gate of the third transistor T3 is connected to the first scan line, and the drain of the third transistor T3 is respectively connected to the storage capacitor C The first electrode plate D1 and the gate electrode of the first transistor T1 are connected, the drain electrode of the first transistor T1 is connected to the power line, and the source electrode of the first transistor T1 is respectively connected to the anode layer of the OLED And the second plate D2 of the storage capacitor C, the gate of the fourth transistor T4 is connected to the second scan line, and the source of the fourth transistor T4 is connected to the reference potential line, The drain of the fourth transistor T4 is connected to the anode layer of the OLED.
由於第三電晶體T3的汲極分別與存儲電容C的第一極板及第一電晶體T1的閘極連接,而第一導電層的一部分作為存儲電容C的第一極板,另一部分作為所述第一電晶體T1的閘極,則在結構上來說,第三電晶體T3的汲極與第一導電層連接。由於所述第一電晶體T1的源極分別與陽極層及存儲電容C的第二極板D2連接,所述第四電晶體T4的汲極與陽極層連接,而第三導電層的一部分作為存儲電容C的第二極板D2,另一部分作為對應的陽極層,則在結構上來說,第一電晶體T1的源極與第三導電 層連接,第四電晶體T4的汲極與第三導電層連接。 Since the drain of the third transistor T3 is connected to the first plate of the storage capacitor C and the gate of the first transistor T1, a part of the first conductive layer serves as the first plate of the storage capacitor C, and the other part serves as the first plate of the storage capacitor C. The gate of the first transistor T1 is structurally connected to the drain of the third transistor T3 and the first conductive layer. Since the source of the first transistor T1 is connected to the anode layer and the second plate D2 of the storage capacitor C, the drain of the fourth transistor T4 is connected to the anode layer, and a part of the third conductive layer serves as The second plate D2 of the storage capacitor C, and the other part is used as the corresponding anode layer. In terms of structure, the source of the first transistor T1 is connected to the third conductive layer, and the drain of the fourth transistor T4 is connected to the third conductive layer. Conductive layer connection.
在一個實施例中,第一驅動電路單元的所述第一電晶體T1、所述第三電晶體T3、所述第四電晶體T4、所述存儲電容C、所述資料線、所述第一掃描線、所述第二掃描線、所述參考電位線及所述陽極層均由透明材料製成。優選的,所述透明材料的透明率大於或等於90%。進一步地,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。如此,可使得第一顯示區A的驅動電路層的透光率較高,進而使得第一顯示區A的透光率提高。 In one embodiment, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, and the second transistor of the first drive circuit unit A scan line, the second scan line, the reference potential line and the anode layer are all made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the driving circuit layer of the first display area A can be made higher, and the light transmittance of the first display area A can be improved.
本發明實施例還提供了一種顯示裝置200,如第10圖所示,所述顯示裝置200包括設備本體201及上述的顯示面板100。如第11圖所示,設備本體201具有器件區202,顯示面板100覆蓋在所述設備本體201上。其中,所述器件區202位於所述顯示面板100的第一顯示區下方,且所述器件區202中設置有透過所述顯示面板100的第一顯示區進行光線採集的感光元件203。 An embodiment of the present invention also provides a
其中,所述感光元件203可包括攝像頭和/或光線感應器。器件區202中還可設置除感光元件203的其他器件,例如陀螺儀或聽筒等器件。 Wherein, the
器件區202可以是開槽區,顯示面板100的第一顯示區可對應於開槽區貼合設置,以使得感光元件203能夠透過該第一顯示區對外部光線進行採集等操作。 The
上述的顯示裝置200,由於其包括的顯示面板100的位於第一顯示區的導電層的厚度小於位於第二顯示區的導電層的厚度,可使得第一顯示區的透光率大於第二顯示區的透光率,從而設置於第一顯示區下方的感光元件可接收到足夠的光線,保證感光元件可正常工作。 In the above-mentioned
上述的例如顯示裝置的電子設備可以為手機、平板、掌上型電腦、ipad等數碼設備。 The above-mentioned electronic equipment such as a display device may be a mobile phone, a tablet, a palmtop computer, an ipad and other digital equipment.
本發明實施例還提供了一種顯示面板的製備方法,所述顯示面板具有第一顯示區及第二顯示區,所述製備方法包括如下步驟S101至步驟S104,如第12圖所示。 The embodiment of the present invention also provides a method for manufacturing a display panel, the display panel having a first display area and a second display area, and the manufacturing method includes the following steps S101 to S104, as shown in FIG. 12.
在步驟S101中,形成襯底。 In step S101, a substrate is formed.
其中,襯底可為柔性襯底或剛性襯底。剛性襯底例如可以是玻璃基板、石英襯底或者塑膠襯底等透明襯底。 Among them, the substrate may be a flexible substrate or a rigid substrate. The rigid substrate may be, for example, a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.
襯底為柔性襯底時,所述形成襯底的步驟S101可包括如下步驟S1011至步驟S1015,如第13圖所示。 When the substrate is a flexible substrate, the step S101 of forming the substrate may include the following steps S1011 to S1015, as shown in FIG. 13.
在步驟S1011中,形成襯底層。 In step S1011, an underlayer is formed.
其中,襯底層可以為多層有機材料層和多層無機材料層交疊的疊層。如第14圖所示,襯底層101包括由下至上依次交疊的第二有機層121、第二無機層122、第三有機層123和第三無機層124。 Wherein, the substrate layer may be a stack of multiple organic material layers and multiple inorganic material layers. As shown in FIG. 14, the
在步驟S1012中,在所述襯底層的與所述第一顯示區對應的位置處形成凹槽。 In step S1012, a groove is formed at a position of the substrate layer corresponding to the first display area.
通過步驟S1012可得到第一中間結構,第15圖為第一中間結構的結構示意圖。如第15圖所示,襯底層101的底部形成凹槽102。其中,可採用刻蝕工藝將位於第一顯示區A的第二有機層121、第二無機層122及部分厚度的第三有機層123刻蝕掉而形成凹槽102。 The first intermediate structure can be obtained through step S1012, and FIG. 15 is a schematic structural diagram of the first intermediate structure. As shown in FIG. 15, a
在步驟S1013中,在所述凹槽內形成透明材料層。 In step S1013, a transparent material layer is formed in the groove.
其中,透明材料層的透光率可大於90%。進一步地,透明材料層的材料可包括PET、PC中的至少一種。 Wherein, the light transmittance of the transparent material layer may be greater than 90%. Further, the material of the transparent material layer may include at least one of PET and PC.
在一個實施例中,在所述凹槽內形成透明材料層的步驟S1013之前,該製備方法還可包括步驟S1014:在所述凹槽的內表面及所述襯底層的下方形成保護層。通過該步驟可得到第二中間結構,第16圖為第二中間結構的結構示意圖,凹槽102的內表面及襯底層101的位於第二顯示區B的部分的下方形成保護層5。 In one embodiment, before step S1013 of forming a transparent material layer in the groove, the preparation method may further include step S1014: forming a protective layer on the inner surface of the groove and under the substrate layer. Through this step, a second intermediate structure can be obtained. FIG. 16 is a schematic structural view of the second intermediate structure. The
在步驟S1013可在第二中間結構的基礎上實施,在第二中間結構的基礎上在凹槽102內形成透明材料層111,可得到第三中間結構。第17圖為第三中間結構的結構示意圖。 Step S1013 can be implemented on the basis of the second intermediate structure, and the
進一步地,在所述凹槽內形成透明材料層的步驟S1013之後,該製備方法還可包括步驟S1015:在所述透明材料層的下方形成保護層。 Further, after step S1013 of forming a transparent material layer in the groove, the preparation method may further include step S1015: forming a protective layer under the transparent material layer.
該步驟中,在第三中間結構的基礎上,在透明材料層111 的下方形成保護層5,可得到第4圖所示的結構,也即是得到襯底1。 In this step, on the basis of the third intermediate structure, the
其中,透明材料層111的下端面可與襯底層位於第二顯示區B的部分的下端面齊平,從而使得位於第一顯示區A的襯底與位於第二顯示區B的襯底的厚度相同。 Wherein, the lower end surface of the
在步驟S102中,在所述襯底上形成驅動電路層。 In step S102, a driver circuit layer is formed on the substrate.
在步驟S103中,在所述驅動電路層上形成發光功能膜層。 In step S103, a light-emitting function film layer is formed on the driving circuit layer.
在步驟S104中,在所述發光功能膜層上形成導電層,位於所述第一顯示區的導電層的厚度小於位於所述第二顯示區的導電層的厚度,所述第一顯示區的導電層與所述第二顯示區的部分導電層同時形成。 In step S104, a conductive layer is formed on the light-emitting function film layer, and the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area. The conductive layer is formed simultaneously with part of the conductive layer of the second display area.
在一個實施例中,如第18圖所示,在所述發光功能膜層上形成導電層的步驟S104可通過如下步驟S1041和步驟S1042完成。 In one embodiment, as shown in FIG. 18, the step S104 of forming a conductive layer on the light-emitting function film layer can be completed by the following steps S1041 and S1042.
在步驟S1041中,在所述發光功能膜層上形成第一導電膜層,所述第一導電膜層覆蓋所述第一顯示區及所述第二顯示區。 In step S1041, a first conductive film layer is formed on the light-emitting function film layer, and the first conductive film layer covers the first display area and the second display area.
通過步驟S1041可得到第四中間結構,第19圖所示為第四中間結構的結構示意圖。如第19圖所示,驅動電路層2形成於襯底1上,發光功能膜層3形成於驅動電路層2上,A為第一顯示區,B為第二顯示區。第一導電膜層401形成在發光功能膜層3上,第一導電膜層401同時覆蓋位於第一顯示區A和第二顯示區B的發光功能膜層3。 The fourth intermediate structure can be obtained through step S1041, and FIG. 19 is a schematic structural diagram of the fourth intermediate structure. As shown in FIG. 19, the driving
其中,第一導電膜層401的材料可為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。或者,第一導電膜層401的材料包括Mg和Ag中的至少一種。優選的,第一導電膜層401的材料包括Mg和Ag,且Mg的品質與Ag的品質的比例範圍為1:4~1:20。 The material of the first
在步驟S1042中,在所述第一導電膜層上形成第二導電膜層,所述第二導電膜層僅設置於第二顯示區。 In step S1042, a second conductive film layer is formed on the first conductive film layer, and the second conductive film layer is only disposed in the second display area.
通過步驟S1042可得到第五中間結構。第20圖為第五中間結構的結構示意圖。其中,第二導電膜層402僅設置於第二顯示區B上。 The fifth intermediate structure can be obtained through step S1042. Figure 20 is a schematic diagram of the fifth intermediate structure. Wherein, the second
因此,通過步驟S1041和步驟S1042得到的導電層4中,導電層4位於第一顯示區A的部分只有第一導電膜層401,導電層4位於第二顯示區B的部分包括第一導電膜層401和第二導電膜層402。 Therefore, in the
其中,第二導電膜層的材料可包括Mg和Ag中的至少一種。 Wherein, the material of the second conductive film layer may include at least one of Mg and Ag.
在另一個實施例中,如第21圖所示,在所述發光功能膜層上形成導電層的步驟S104可通過如下步驟S1043和步驟S1044完成。 In another embodiment, as shown in FIG. 21, the step S104 of forming a conductive layer on the light-emitting function film layer can be completed by the following steps S1043 and S1044.
在步驟S1043中,在位於所述第二顯示區的所述發光功能膜層上形成第三導電膜層。 In step S1043, a third conductive film layer is formed on the light-emitting function film layer located in the second display area.
通過步驟S1043可得到第六中間結構,第22圖為第六中間結構的結構示意圖。如第22圖所示,驅動電路層2形成於襯底1上,發光功能膜層3形成於驅動電路層2上,A為第一顯示區,B為第二顯示區。第三導電膜層403形成在發光功能膜層3上,僅覆蓋第二顯示區B。 The sixth intermediate structure can be obtained through step S1043, and FIG. 22 is a schematic structural diagram of the sixth intermediate structure. As shown in FIG. 22, the driving
其中,第三導電膜層403的材料可與第二導電膜層402的厚度相同,第三導電膜層403的材料與第二導電膜層402的材料可相同,包括Mg和Ag中的至少一種。 Wherein, the material of the third
在步驟S1044中,在所述第一顯示區的發光功能膜層上及所述第二顯示區的第三導電膜層上形成第四導電膜層。 In step S1044, a fourth conductive film layer is formed on the light-emitting function film layer in the first display area and the third conductive film layer in the second display area.
通過步驟S1044可得到第七中間結構,第23圖所示第七中間結構的結構示意圖。如第23圖所示,第四導電膜層404覆蓋第一顯示區A的發光膜層3及第二顯示區B的第三導電膜層403。 The seventh intermediate structure can be obtained through step S1044, and a schematic structural diagram of the seventh intermediate structure shown in FIG. 23. As shown in FIG. 23, the fourth
因此,通過步驟S1043和步驟S1044得到的導電層4中,導電層4位於第一顯示區A的部分只有第四導電膜層404,導電層4位於第二顯示區B的部分包括第三導電膜層403和第四導電膜層404。 Therefore, in the
第四導電膜層404的材料可為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。或者,第四導電膜層404的材料包括Mg和Ag中的至少一種。優選的,第三導電膜層403的材料包括Mg和Ag,且Mg的品質與Ag的品質的比例範圍為1:4~1:20。第四導電膜層404的厚度可與第一導電膜層401的厚度相同,第四導電膜層404的材料可與第一導電膜層401的材料相同。 The material of the fourth
本發明實施例提供的製備方法製備得到的顯示面板,位於第一顯示區的導電層的厚度小於位於第二顯示區的導電層的厚度,可使得第一顯示區的透光率大於第二顯示區的透光率,從而設置於第一顯示區下方 的感光元件可接收到足夠的光線,保證感光元件可正常工作。 In the display panel prepared by the manufacturing method provided by the embodiment of the present invention, the thickness of the conductive layer in the first display area is less than the thickness of the conductive layer in the second display area, so that the light transmittance of the first display area is greater than that of the second display area. The light transmittance of the area, so that the photosensitive element disposed under the first display area can receive enough light to ensure that the photosensitive element can work normally.
上述的製備方法製備的顯示面板與上述實施例提供的顯示面板100屬於同一構思,相關細節參見上述顯示面板100的實施例,在此不再贅述。 The display panel prepared by the foregoing manufacturing method belongs to the same concept as the
本發明實施例還提供了一種陣列基板,該陣列基板包括透明OLED基板300,如第24圖所示,所述透明OLED基板300或透明的第一OLED基板包括襯底1’、形成於所述襯底1’上的驅動電路層2’及形成於所述驅動電路層2’上的發光功能膜層3’。其中,所述驅動電路層2’包括多個第一驅動電路單元,所述第一驅動電路單元包括存儲電容及第一電晶體,所述存儲電容包括第一極板與第二極板。參見第25圖和第26圖,所述第一驅動電路單元具有第一導電層91’,所述第一導電層91’的一部分912’作為所述第一極板,另一部分911’作為所述第一電晶體的閘極。 An embodiment of the present invention also provides an array substrate, which includes a
在透明OLED基板300中,由於第一導電層的一部分作為所述第一極板,另一部分作為所述第一電晶體的閘極,則第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一工藝步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。 In the
其中,如第25圖和第26圖所示,透明OLED基板300的驅動電路層2’具有閘極絕緣層24’、位於閘極絕緣層24’上的電容絕緣層25’、位於電容絕緣層25’上的層間介質層26’、位於層間介質層26’上的平坦化層27’,第一導電層91’位於閘極絕緣層24’與電容絕緣層25’之間。 Wherein, as shown in FIGS. 25 and 26, the driving circuit layer 2'of the
第一驅動電路單元可為2TIC驅動電路。第一驅動電路單元為2TIC驅動電路時,透明OLED基板300的驅動電路層還可包括電源線、資料線、掃描線及與多個第一驅動電路單元一一對應的陽極層。參見第25圖,透明OLED基板300的所述驅動電路層還具有位於平坦化層27’上的與第一驅動電路單元一一對應的陽極層21’及第二導電層92’,所述第二導電層92’的一部分921’作為所述存儲電容的第二極板,另一部分922’作為所述電源線;所述第一驅動電路單元還包括第二電晶體,所述第一電晶體的源極與所述第二導電層92’連接,所述第一電晶體的汲極與對應的陽極層連 接,所述第二電晶體的閘極與所述掃描線連接,所述第二電晶體的汲極分別與所述第一導電層連接,所述第二電晶體的源極與所述資料線連接。 The first driving circuit unit may be a 2TIC driving circuit. When the first driving circuit unit is a 2TIC driving circuit, the driving circuit layer of the
第25圖所示的透明OLED基板300的驅動電路層2’除了圖中所示的第一導電層91’、第二導電層92’、陽極層23’、閘極絕緣層24’、電容絕緣層25’、層間介質層26’及平坦化層27’,還包括資料線、掃描線、第一電晶體的源極和汲極、第二電晶體的閘極、源極和汲極,但是第25圖中未示出這些結構。 The drive circuit layer 2'of the
第一驅動電路單元為2TIC驅動電路時,其電路圖如第7圖所示,陣列基板所包含的第一OLED基板的第一驅動電路單元為2T1C時的結構與上文描述的顯示面板的第一驅動電路單元為2T1C時的結構相同,在此不再贅述。 When the first driving circuit unit is a 2TIC driving circuit, its circuit diagram is as shown in Figure 7. The structure of the first driving circuit unit of the first OLED substrate included in the array substrate is 2T1C and the structure of the first display panel described above. When the driving circuit unit is 2T1C, the structure is the same, so it will not be repeated here.
所述第一電晶體T1、所述第二電晶體T2、所述存儲電容C、所述資料線、所述掃描線及所述陽極層的材料由透明材料製成。優選的,所述透明材料的透明率大於或等於90%。進一步地,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。如此,可使得陣列基板所包含的透明OLED基板或第一OLED基板的驅動電路層的透光率較高,進而使得透明OLED基板或第一OLED基板的透光率提高。 The materials of the first transistor T1, the second transistor T2, the storage capacitor C, the data line, the scan line, and the anode layer are made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the drive circuit layer of the transparent OLED substrate or the first OLED substrate included in the array substrate can be higher, and the light transmittance of the transparent OLED substrate or the first OLED substrate can be improved.
第一驅動電路單元可為3TIC驅動電路。第一驅動電路單元為3TIC驅動電路時,所述驅動電路層可包括電源線、資料線、第一掃描線、第二掃描線、參考電位線及與多個第一驅動電路單元一一對應的陽極層。如第26圖所示,驅動電路層2’具有位於平坦化層27’上的第三導電層93’,所述第三導電層93’的一部分932’作為所述第二極板,另一部分931’作為對應的陽極層。如此設置,陽極層、存儲電容的第二極板及二者之間的連接可通過同一工藝步驟完成時,無需在陽極層、存儲電容的第二極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。 The first driving circuit unit may be a 3TIC driving circuit. When the first driving circuit unit is a 3TIC driving circuit, the driving circuit layer may include a power supply line, a data line, a first scan line, a second scan line, a reference potential line, and one-to-one correspondence with a plurality of first driving circuit units. Anode layer. As shown in FIG. 26, the driving circuit layer 2'has a third conductive layer 93' on the planarization layer 27', a part 932' of the third conductive layer 93' serves as the second plate, and the other part 931' serves as the corresponding anode layer. With this arrangement, when the anode layer, the second plate of the storage capacitor and the connection between the two can be completed through the same process step, there is no need to prepare the connection between the two after the anode layer and the second plate of the storage capacitor are formed. The structure can simplify the manufacturing process flow of the first driving circuit unit.
第26圖所示的透明OLED基板或第一OLED基板的驅動電路層2’除了圖中所示的第一導電層91’、第三導電層93’、閘極絕緣層24’、電容絕緣層25’、層間介質層26’及平坦化層27’,還包括電源線、資料線、第一掃描線、第二掃描線、參考電位線、第一電晶體的源極和汲極、第三 電晶體的閘極、源極和汲極、第四電晶體的閘極、源極和汲極,但是第26圖中未示出這些結構。第一驅動電路單元為3TIC驅動電路時,其電路圖如第9圖所示。陣列基板所包含的第一OLED基板的第一驅動電路單元為3T1C時的結構與上文描述的顯示面板的第一驅動電路單元為3T1C時的結構相同,在此不再贅述。 The drive circuit layer 2'of the transparent OLED substrate or the first OLED substrate shown in FIG. 26 is in addition to the first conductive layer 91', the third conductive layer 93', the
優選的,所述第一電晶體T1、所述第三電晶體T3、所述第四電晶體T4、所述存儲電容C、所述資料線、所述第一掃描線、所述第二掃描線、所述參考電位線及所述陽極層由透明材料製成。優選的,所述透明材料的透明率大於或等於90%。進一步地,所述透明材料為氧化銦錫、氧化銦鋅、摻雜銀的氧化銦錫或者摻雜銀的氧化銦鋅。如此,可使得陣列基板的透明OLED基板或第一OLED基板的驅動電路層的透光率較高,進而使得透明OLED基板或第一OLED基板的透光率提高。 Preferably, the first transistor T1, the third transistor T3, the fourth transistor T4, the storage capacitor C, the data line, the first scan line, and the second scan The wire, the reference potential wire and the anode layer are made of transparent materials. Preferably, the transparency rate of the transparent material is greater than or equal to 90%. Further, the transparent material is indium tin oxide, indium zinc oxide, silver-doped indium tin oxide or silver-doped indium zinc oxide. In this way, the light transmittance of the transparent OLED substrate of the array substrate or the driving circuit layer of the first OLED substrate can be higher, and the light transmittance of the transparent OLED substrate or the first OLED substrate can be improved.
本發明實施例提供的陣列基板包括第一OLED基板及第二OLED基板,所述第一OLED基板為透明OLED基板,所述第二OLED基板為非透明OLED基板;所述第一OLED基板與所述第二OLED基板共用同一襯底1,且所述第一OLED基板的發光功能膜層與所述第二OLED基板的發光功能膜層在同一工藝中形成。 The array substrate provided by the embodiment of the present invention includes a first OLED substrate and a second OLED substrate. The first OLED substrate is a transparent OLED substrate, and the second OLED substrate is a non-transparent OLED substrate; The second OLED substrate shares the
本發明實施例提供的陣列基板,由於其第一OLED基板的第一導電層的一部分作為存儲電容的第一極板,另一部分作為第一電晶體的閘極,則第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程。第一OLED基板(即,上述的透明OLED基板)和第二OLED基板包括:襯底;驅動電路層,所述驅動電路層形成於所述襯底上;發光功能膜層,所述發光功能膜層形成於所述驅動電路層上。 In the array substrate provided by the embodiment of the present invention, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate of the first transistor and the first plate of the storage capacitor are formed , Can simplify the manufacturing process of the first driving circuit unit. The first OLED substrate (ie, the above-mentioned transparent OLED substrate) and the second OLED substrate include: a substrate; a driving circuit layer formed on the substrate; a light-emitting functional film layer, the light-emitting functional film A layer is formed on the driving circuit layer.
其中,陣列基板的所述第一OLED基板可至少部分被所述第二OLED基板包圍。 Wherein, the first OLED substrate of the array substrate may be at least partially surrounded by the second OLED substrate.
在一個實施例中,所述第二OLED基板的驅動電路層包括多個第二驅動電路單元,所述第二驅動電路單元包括的電晶體的數量大於 所述第一驅動電路單元包括的電晶體的數量。可選的,第一驅動電路單元可為2TIC驅動電路,(即第一驅動電路單元中包括兩個電晶體和一個存儲電容),或者第一驅動電路單元可為3TIC驅動電路(即第一驅動電路單元中包括三個電晶體和一個存儲電容)。第二驅動電路單元例如可為7TIC電路(即第二驅動電路單元中包括七個電晶體和一個存儲電容)、5TIC電路(即第二驅動電路單元中包括五個電晶體和一個存儲電容)、4TIC電路(即第二驅動電路單元中包括四個電晶體和一個存儲電容)等。如此設置,第一驅動電路單元的結構複雜度小於第二驅動電路單元的結構複雜度,從而第一OLED基板的驅動電路層的導電層的面積較小,從而可提高第一OLED基板的透光率。 In an embodiment, the driving circuit layer of the second OLED substrate includes a plurality of second driving circuit units, and the number of transistors included in the second driving circuit unit is greater than the number of transistors included in the first driving circuit unit. quantity. Optionally, the first driving circuit unit may be a 2TIC driving circuit (that is, the first driving circuit unit includes two transistors and a storage capacitor), or the first driving circuit unit may be a 3TIC driving circuit (that is, the first driving circuit). The circuit unit includes three transistors and a storage capacitor). The second driving circuit unit may be, for example, a 7TIC circuit (that is, the second driving circuit unit includes seven transistors and a storage capacitor), a 5TIC circuit (that is, the second driving circuit unit includes five transistors and a storage capacitor), 4TIC circuit (that is, the second drive circuit unit includes four transistors and a storage capacitor) and so on. With this arrangement, the structural complexity of the first driving circuit unit is less than the structural complexity of the second driving circuit unit, so that the conductive layer of the driving circuit layer of the first OLED substrate has a smaller area, thereby improving the light transmission of the first OLED substrate rate.
本發明實施例還提供了一種顯示幕,所述顯示幕包括上述的陣列基板及封裝結構,所述封裝結構設置在所述陣列基板上,所述陣列基板的第一OLED基板下方可設置感光元件。 An embodiment of the present invention also provides a display screen, the display screen comprising the above-mentioned array substrate and a packaging structure, the packaging structure is disposed on the array substrate, and a photosensitive element can be disposed under the first OLED substrate of the array substrate .
本發明實施例提供的顯示幕,由於其第一OLED基板的第一導電層的一部分作為存儲電容的第一極板,另一部分作為第一電晶體的閘極,則第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程,進而簡化第一OLED基板的的驅動電路層的製備工藝流程。 In the display screen provided by the embodiment of the present invention, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first plate of the storage capacitor and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate of the first transistor and the first plate of the storage capacitor are formed Therefore, the manufacturing process flow of the first driving circuit unit can be simplified, thereby simplifying the manufacturing process flow of the driving circuit layer of the first OLED substrate.
其中,封裝層可以是薄膜封裝結構,薄膜封裝結構可包括有機材料層和無機材料層交替疊加的疊層,其中有機材料層和無機材料層均為透明材料,無機材料層的材料例如可以是SiO2,SiNx以及Al2O3等,有機材料層的材料例如可以是PI、PET等。封裝層也可以是玻璃蓋板或者是玻璃粉封裝結構。 Wherein, the encapsulation layer may be a thin-film encapsulation structure, and the thin-film encapsulation structure may include alternately stacked organic material layers and inorganic material layers, wherein the organic material layer and the inorganic material layer are both transparent materials, and the material of the inorganic material layer may be, for example, SiO 2. SiNx and Al 2 O 3, etc. The material of the organic material layer can be, for example, PI, PET, etc. The packaging layer may also be a glass cover plate or a glass powder packaging structure.
本發明實施例還提供了一種顯示裝置,所述顯示裝置包括設備本體及上述的顯示幕。設備本體具有器件區,顯示幕覆蓋在所述設備本體上。其中,所述器件區位於所述第一OLED基板下方,且所述器件區中設置有透過所述第一OLED基板進行光線採集的感光元件。 An embodiment of the present invention also provides a display device, which includes an equipment body and the above-mentioned display screen. The device body has a device area, and the display screen covers the device body. Wherein, the device area is located under the first OLED substrate, and a photosensitive element that collects light through the first OLED substrate is arranged in the device area.
其中,所述感光元件可包括攝像頭和/或光線感應器。器件 區中還可設置除感光元件的其他器件,例如陀螺儀或聽筒等器件。 Wherein, the photosensitive element may include a camera and/or a light sensor. Devices other than photosensitive elements, such as gyroscopes or earpieces, can also be set in the device area.
器件區可以是開槽區,顯示幕的第一OLED基板可對應於開槽區貼合設置,以使得感光元件能夠透過該第一OLED基板對外部光線進行採集等操作。 The device area may be a grooved area, and the first OLED substrate of the display screen may be arranged in a fit manner corresponding to the grooved area, so that the photosensitive element can collect external light through the first OLED substrate.
由於上述的顯示裝置中,第一OLED基板的第一導電層的一部分作為存儲電容的第一極板,另一部分作為第一電晶體的閘極,則第一電晶體的閘極、存儲電容的第一極板及二者之間的連接可通過同一步驟完成時,無需在第一電晶體的閘極、存儲電容的第一極板形成之後再製備二者之間的連接結構,可簡化第一驅動電路單元的製備工藝流程,進而簡化第一OLED基板的驅動電路層的製備工藝流程。 In the above-mentioned display device, a part of the first conductive layer of the first OLED substrate is used as the first plate of the storage capacitor, and the other part is used as the gate of the first transistor. When the first electrode plate and the connection between the two can be completed in the same step, there is no need to prepare the connection structure between the two after the gate electrode of the first transistor and the first electrode plate of the storage capacitor are formed. A manufacturing process flow of the driving circuit unit further simplifies the manufacturing process flow of the driving circuit layer of the first OLED substrate.
上述例如顯示裝置的電子設備可以為手機、平板、掌上型電腦、ipad等數碼設備。 The above-mentioned electronic devices such as display devices may be digital devices such as mobile phones, tablets, palmtop computers, and ipads.
在圖式中,為了圖示的清晰可能誇大了層和區域的尺寸。而且可以理解,當元件或層被稱為在另一元件或層“上”時,它可以直接在其他元件上,或者可以存在中間的層。另外,可以理解,當元件或層被稱為在另一元件或層“下”時,它可以直接在其他元件下,或者可以存在一個以上的中間的層或元件。另外,還可以理解,當層或元件被稱為在兩層或兩個元件“之間”時,它可以為兩層或兩個元件之間唯一的層,或還可以存在一個以上的中間層或元件。通篇相似的參考標記指示相似的元件。 In the drawings, the size of layers and regions may be exaggerated for clarity of illustration. It will also be understood that when an element or layer is referred to as being "on" another element or layer, it can be directly on the other element or intervening layers may be present. In addition, it will be understood that when an element or layer is referred to as being "under" another element or layer, it can be directly under the other element, or there may be more than one intervening layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it can be the only layer between the two layers or two elements, or more than one intervening layer may also be present. Or components. Similar reference numerals indicate similar elements throughout.
100‧‧‧顯示面板 100‧‧‧Display Panel
A‧‧‧第一顯示區 A‧‧‧First display area
B‧‧‧第二顯示區 B‧‧‧Second display area
1‧‧‧襯底 1‧‧‧Substrate
2‧‧‧驅動電路層 2‧‧‧Drive circuit layer
3‧‧‧發光功能膜層 3‧‧‧Light-emitting functional film
4‧‧‧導電層 4‧‧‧Conductive layer
d1,d2‧‧‧厚度 d1,d2‧‧‧thickness
11‧‧‧第一襯底 11‧‧‧First substrate
12‧‧‧第二襯底 12‧‧‧Second substrate
111‧‧‧透明材料層 111‧‧‧Transparent material layer
112‧‧‧疊層 112‧‧‧Layer
5‧‧‧保護層 5‧‧‧Protection layer
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??201920703006.3 | 2019-05-15 | ||
CN201920703006.3 | 2019-05-15 | ||
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CN107946341A (en) * | 2017-11-10 | 2018-04-20 | 上海天马微电子有限公司 | Display device and method for manufacturing display device |
CN108376696A (en) * | 2017-09-30 | 2018-08-07 | 云谷(固安)科技有限公司 | Terminal and display screen |
CN108540613A (en) * | 2018-06-07 | 2018-09-14 | 肇庆高新区徒瓦科技有限公司 | A kind of comprehensive screen mobile phone of modified |
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CN108376696A (en) * | 2017-09-30 | 2018-08-07 | 云谷(固安)科技有限公司 | Terminal and display screen |
CN107946341A (en) * | 2017-11-10 | 2018-04-20 | 上海天马微电子有限公司 | Display device and method for manufacturing display device |
CN108810200A (en) * | 2018-06-04 | 2018-11-13 | Oppo广东移动通信有限公司 | Display device |
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