TWI704715B - Antenna array module and manufacturing method thereof - Google Patents
Antenna array module and manufacturing method thereof Download PDFInfo
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本揭露係有關於一種天線,特別是一種天線陣列模組。The disclosure relates to an antenna, particularly an antenna array module.
5G無線網路可達成更高的資料容量及更快的資料傳輸,故已成為了未來發展的趨勢。小型基地台(small cell)可應用於5G無線網路,並可提升資料容量、資料傳輸速度及整體網路效率,故可有效地提升服務品質。5G wireless network can achieve higher data capacity and faster data transmission, so it has become the trend of future development. Small cells can be applied to 5G wireless networks, and can increase data capacity, data transmission speed and overall network efficiency, so it can effectively improve service quality.
而為了改善小型基地台的效能,如何發展高增益具波束調整功能之相位陣列天線則成為了一個重要的議題。In order to improve the performance of small base stations, how to develop a phased array antenna with high gain and beam adjustment function has become an important issue.
相位陣列天線包含多個天線陣列模組(天線單元),而這些天線陣列模組則由其內部的晶片驅動;然而,現有的天線陣列模組由於結構及材料上的限制,使這些晶片產生的熱能無法有效地進行散熱,故也影響了天線陣列模組的效能;此外,當模組完全使用高散熱材料時,雖提昇散熱特性,但也影響天線之輻射增益。Phased array antennas include multiple antenna array modules (antenna units), and these antenna array modules are driven by their internal chips; however, due to the limitations of the structure and materials of the existing antenna array modules, these chips produce The heat energy cannot effectively dissipate heat, so it also affects the performance of the antenna array module. In addition, when the module uses high heat dissipation materials, although the heat dissipation characteristics are improved, the radiation gain of the antenna is also affected.
因此,如何提出一種天線陣列模組,能夠有效改善習知技藝之天線陣列模組的各種限制已成為一個刻不容緩的問題。Therefore, how to propose an antenna array module that can effectively improve the various limitations of the conventional antenna array module has become an urgent problem.
有鑑於上述習知技藝之問題,本揭露之其中一目的就是在提供一種天線陣列模組及其製造方法,以解決習知技藝之天線陣列模組的各種限制。In view of the above-mentioned problems of the prior art, one of the objectives of the present disclosure is to provide an antenna array module and a manufacturing method thereof to solve various limitations of the antenna array module of the prior art.
根據本揭露之其中一目的,提出一種天線陣列模組,其包含線路層、天線介質層、金屬片及晶片。線路層包含訊號線、接地層及第一介質材料,且接地層包含耦合槽孔,其中訊號線與晶片連接。天線介質層位於線路層上,並包含第二介質材料,第二介質材料之導熱係數小於第一介質材料之導熱係數。金屬片位於天線介質層上,毫米波訊號透過耦合槽孔,由訊號線耦合至金屬片。According to one of the objectives of the present disclosure, an antenna array module is provided, which includes a circuit layer, an antenna dielectric layer, a metal sheet, and a chip. The circuit layer includes a signal line, a ground layer and a first dielectric material, and the ground layer includes a coupling slot, where the signal line is connected to the chip. The antenna dielectric layer is located on the circuit layer and includes a second dielectric material. The thermal conductivity of the second dielectric material is less than the thermal conductivity of the first dielectric material. The metal sheet is located on the antenna dielectric layer, and the millimeter wave signal is coupled to the metal sheet by the signal line through the coupling slot.
根據本揭露之其中一目的,再提出一種天線陣列模組之製造方法,其包含下列步驟:形成具有訊號線、接地層、耦合槽孔與第一介質材料之多層結構堆疊組合之線路層,同時於側邊形成側散熱電極。形成第二介質材料於線路層上以做為天線介質層,且第二介質材料之導熱係數小於第一介質材料之導熱係數。形成金屬片於天線介質層上。於將晶片與線路層內之訊號線連接,完成模製作。According to one of the objectives of the present disclosure, a method for manufacturing an antenna array module is further provided, which includes the following steps: forming a circuit layer with a multi-layer structure stacking combination of a signal line, a ground layer, a coupling slot and a first dielectric material, and at the same time A side heat dissipation electrode is formed on the side. A second dielectric material is formed on the circuit layer to serve as an antenna dielectric layer, and the thermal conductivity of the second dielectric material is smaller than that of the first dielectric material. A metal sheet is formed on the antenna dielectric layer. Connect the chip and the signal line in the circuit layer to complete the mold making.
以下將參照相關圖式,說明依本揭露之天線陣列模組及其製造方法之實施例,為了清楚與方便圖式說明之故,圖式中的各部件在尺寸與比例上可能會被誇大或縮小地呈現。The following will describe embodiments of the antenna array module and its manufacturing method according to the present disclosure with reference to related drawings. For clarity and convenience of the drawings, the components in the drawings may be exaggerated or exaggerated in size and proportion. Presented in a reduced scale.
請參閱第1圖,其係為本揭露之第一實施例之天線陣列模組之剖面圖。天線陣列模組11包含線路層111、天線介質層112、金屬片113、晶片114及側散熱電極115。Please refer to FIG. 1, which is a cross-sectional view of the antenna array module of the first embodiment of the disclosure. The
線路層111包含複數個訊號線L、接地層G及第一介質材料D1。晶片114及該些訊號線L位於第一介質材料D1,且晶片114與該些訊號線L連接,其中接地層G包含耦合槽孔S。The
天線介質層112位於線路層111上,並包含第二介質材料D2;其中,第二介質材料D2之導熱係數小於第一介質材料D1之導熱係數;在本實施例中,第一介質材料D1之導熱係數為3~6 W/m.K (W指熱功率單位瓦特,m代表長度單位米,而K為凱氏溫標),第二介質材料D2之導熱係數為0.2~1 W/m.K,且介電損耗(Loss tangent)小於0.008 @10GHz;例如,介電損耗(Loss tangent)為0.001~0.005 @10GHz;在另一實施例中,第一介質材料D1之導熱係數為2~8 W/m.K,而第二介質材料D2之導熱係數為0.1~1 W/m.K,介電損耗為0.0005~0.008 @10GHz;在又一實施例中,第一介質材料D1之導熱係數為2.5~5 W/m.K,而第二介質材料D2之導熱係數為0.2~0.8 W/m.K,介電損耗為0.0005~0.004 @10GHz。例如,第一介質材料D1可採用達方電子 DT-171W或DT-178W材料,其導熱係數為3 W/m.K ;第二介質材料D2可採用半導體模封材料,其導熱係數為0.9W/m.K,介電損耗為0.008 @10GHz 。例如,第一介質材料D1可採用Dupont 9K7,其導熱係數為4.6 W/m.K ;第二介質材料D2可採用RTduroid® 5880材料,其導熱係數為0.2 W/m.K,介電損耗為0.0009 @10GHz。例如,第一介質材料D1可採用Dupont 9K7,其導熱係數為4.6 W/m.K ;第二介質材料D2可採用RO4003C材料,其導熱係數為0.71 W/m.K,介電損耗為0.0027 @10GHz。The antenna
第二介質材料之介電損耗量測方法,係採用IEC 61189-2-721-2015之量測方式進行介電損耗量測。The dielectric loss measurement method of the second dielectric material is the measurement method of IEC 61189-2-721-2015 for dielectric loss measurement.
金屬片113位於天線介質層112上,毫米波訊號透過耦合槽孔S,由訊號線L耦合至金屬片113。The
該些側散熱電極115設置於線路層111之側邊,並與接地層G連接;該些側散熱電極115能銲接於一基板上,以將天線陣列模組11固定於此基板上(並未顯示於圖面);此外,該些側散熱電極115也能與線路層111的高頻訊號連接;在另一實施例中,側散熱電極115也可包覆線路層111側邊;在又一實施例中,側散熱電極115也可包含設置於線路層111側邊之複數個電極片,且相鄰的電極片之間具有一間隔;其中,側散熱電極115可採用銅、銀等金屬材料。The side
由上述可知,在本實施例中,天線陣列模組11能具有更高的設計靈活度及更低的製程難度,更能符合未來的需求。It can be seen from the foregoing that in this embodiment, the
其中,天線陣列模組11為複合材料堆疊結構 ,使線路層111及天線介質層112具有不同的導熱係數,且天線介質層112之導熱係數小於線路層111之導熱係數,且天線介質層112之介電損耗小於0.008@10GHz,此材料之堆疊結構設計能改善天線陣列模組11之散熱效果,並使天線陣列模組具有良好的天線增益。Wherein, the
此外,天線介質層112之導熱係數為0.2~1W/m.K(等同第二介質材料D2之導熱係數為0.2~1W/m.K)。而線路層111的第一介質材料D1之導熱係數為3~6W/m.K,由於線路層111包含複數個訊號線L與接地層G,故使線路層111之導熱係數能提升為4~8W/m.K。In addition, the thermal conductivity of the antenna
另外,該些側散熱電極115不但能用於固定天線陣列模組11及傳遞訊號,更能直接且有效地將晶片114產生的熱能排出。In addition, the side
當然,上述僅為舉例,天線陣列模組11之結構、介質材料之導熱係數及其各元件之間的協同關係均可依實際需求變化,本揭露並不以此實施例為限。Of course, the foregoing is only an example. The structure of the
請參閱第2圖,其係為本揭露之第一實施例之天線陣列模組11之製造方法之流程圖。天線陣列模組11之製造方法包含下列步驟:Please refer to FIG. 2, which is a flowchart of the manufacturing method of the
步驟S21:透過多層堆疊方式,將具有訊號線L、具耦合槽孔S之接地層G與第一介質材料D1之多層結構堆疊組合以形成線路層111,同時於側邊形成側散熱電極115。訊號線L、接地層G與耦合槽孔S可由圖案化金屬所構成。Step S21: Through a multi-layer stacking method, a multi-layer structure with a signal line L, a ground layer G with a coupling slot S and a first dielectric material D1 is stacked and combined to form a
步驟S22:形成第二介質材料D2於線路層111上以做為天線介質層112,且第二介質材料D2之導熱係數小於第一介質材料D1之導熱係數。第二介質D2可藉由塗佈方式實現。Step S22: forming a second dielectric material D2 on the
步驟S23:形成金屬片113於天線介質層112上,金屬片113可由圖案化金屬所構成,如蒸鍍或濺鍍金屬層後,經過蝕刻製程去除部份金屬層而實現,或透過遮罩方式直接鍍上金屬。Step S23: forming a
步驟S24:透過化學鍍膜方式,改善側散熱電極115之可焊接特性。Step S24: Improve the solderability of the side
步驟S25:於將晶片114與線路層111內之訊號線L連接,完成模製作(molding)。Step S25: After connecting the
請參閱第3圖,其係為本揭露之第二實施例之天線陣列模組之剖面圖。天線陣列模組21包含線路層211、天線介質層212、複數個金屬片213、晶片214、複數個側散熱電極215及天線保護層216。Please refer to FIG. 3, which is a cross-sectional view of the antenna array module of the second embodiment of the disclosure. The
線路層211包含複數個訊號線L、複數個接地層G、複數個耦合槽孔S及第一介質材料D1。第一介質材料D1之底部包含凹穴R,而晶片214設置於凹穴R中,並透過銲球B與該些訊號線L連接,固定於第一介質材料D1上。The
天線介質層212位於線路層211上,並包含第二介質材料D2;其中,第二介質材料D2之導熱係數小於第一介質材料D1之導熱係數;在本實施例中,第一介質材料D1可採用Dupont 9K7,其導熱係數為4.6W/m.K ;第二介質材料D2可採用RO4003C材料,其導熱係數為0.71 W/m.K,介電損耗為0.0027。The antenna
該些金屬片213位於天線介質層212上,毫米波訊號透過耦合槽孔S,由訊號線L耦合至金屬片213。The
該些側散熱電極215設置於線路層211之側邊,並與該些接地層G連接;同樣的,該些側散熱電極215能將天線陣列模組21固定於基板上,也能傳遞線路層211中訊號線L之高頻訊號。The side
本揭露之天線陣列模組21更可包含天線保護層216,其包覆該些金屬片213;在本實施例中,天線保護層216包含第三介質材料D3,而天線保護層216之透光度大於80%;在另一實施例中,第三介質材料D3之導熱係數為0.2~0.5 W/m.K;在又一實施例中,第三介質材料D3之導熱係數為0.2~1 W/m.K。The
由上述可知,天線陣列模組21為特殊的複合材料堆疊結構 ,使天線保護層216、線路層211及天線介質層212具有不同的導熱係數;其中,天線保護層216之導熱係數為0.2~1 W/m.K、天線介質層212之導熱係數為0.2~1 W/m.K,天線介質層介電損耗小於0.008@10GHz,線路層211之導熱係數為4~8 W/m.K。It can be seen from the above that the
當然,上述僅為舉例,天線陣列模組11之結構、介質材料之導熱係數及其各元件之間的協同關係均可依實際需求變化,本揭露並不以此實施例為限。Of course, the foregoing is only an example. The structure of the
請參閱第4圖,其係為本揭露之第三實施例之天線陣列模組之剖面圖。天線陣列模組31包含線路層311、天線介質層312、複數個金屬片313、晶片314、複數個側散熱電極315及天線保護層316。Please refer to FIG. 4, which is a cross-sectional view of the antenna array module of the third embodiment of the disclosure. The
線路層311包含複數個訊號線L、複數個接地層G、複數個耦合槽孔S及第一介質材料D1。第一介質材料D1之底部包含凹穴R,而晶片314設置於凹穴R中,並透過銲球B與該些訊號線L連接,固定於第一介質材料D1上。The
天線介質層312位於線路層111上,並包含第二介質材料D2。The
該些複數個金屬片313位於天線介質層312上,毫米波訊號透過該些耦合槽孔S由訊號線L耦合至複數個金屬片313。The plurality of
天線保護層316其包覆該些複數個金屬片313,並包含第三介質材料D3。The
該些側散熱電極315設置於線路層311之側邊,並與該些接地層G連接。The side
上述各元件之結構及連接關係與述實施例相似,故不在此多加贅述;與前述實施例不同的是,本實施例之天線陣列模組31之天線介質層312更包含複數個空腔E,該些空腔E位於該複數個金屬片313及該些耦合槽孔S之間; 此結構設計可加強天線陣列模組31的效能,使天線陣列模組31之應用上更為廣泛。The structure and connection relationship of the above-mentioned elements are similar to those in the above-mentioned embodiment, so we will not repeat them here. The difference from the above-mentioned embodiment is that the
當然,上述僅為舉例,天線陣列模組31之結構、介質材料之導熱係數及其各元件之間的協同關係均可依實際需求變化,本揭露並不以此實施例為限。Of course, the above is only an example. The structure of the
請參閱第5圖,其係為本揭露之第三實施例之天線陣列模組之製造方法之流程圖。天線陣列模組之製造方法包含下列步驟:Please refer to FIG. 5, which is a flowchart of the manufacturing method of the antenna array module of the third embodiment of the disclosure. The manufacturing method of the antenna array module includes the following steps:
步驟S51:透過多層堆疊方式,將具有訊號線L、接地層G、耦合槽孔S與第一介質材料D1之多層結構堆疊組合以形成線路層311,同時於側邊形成側散熱電極315。訊號線L、接地層G與耦合槽孔S可由圖案化金屬所構成。Step S51: Through a multi-layer stacking method, the multi-layer structure with the signal line L, the ground layer G, the coupling slot S and the first dielectric material D1 is stacked and combined to form the
步驟S52:形成第二介質材料D2於線路層311上,並於第二介質材料D2上形成空腔E,以做為天線介質層312,且第二介質材料D2之導熱係數小於第一介質材料D1之導熱係數。其中,空腔E可藉由雷射穿孔、沖孔或鑽孔方式製作。Step S52: forming a second dielectric material D2 on the
步驟S53:形成複數個金屬片313於天線介質層312上。Step S53: forming a plurality of
步驟S54:形成天線保護層316於天線介質層312上,並包覆複數個金屬片313。Step S54: forming an
步驟S55:透過化學鍍膜方式,改善側散熱電極315之可焊接特性。Step S55: Improve the solderability of the side
步驟S56:於將晶片314與線路層311內之訊號線L連接,完成模製作。Step S56: Connect the
根據本揭露之實施例,第一介質材料D1可採用Dupont 9K7,其導熱係數為4.6W/m.K ;第二介質材料D2可採用RTduroid® 5880材料,其導熱係數為0.2W/m.K,介電損耗(loss tangent)為0.0009@10GHz。天線陣列模組31之線路層之導熱係數為4~8W/m.K。According to the embodiment of the present disclosure, the first dielectric material D1 can be Dupont 9K7, which has a thermal conductivity of 4.6W/mK; the second dielectric material D2 can be RTduroid® 5880, which has a thermal conductivity of 0.2W/mK and a dielectric loss (loss tangent) is 0.0009@10GHz. The thermal conductivity of the circuit layer of the
實驗結果顯示,具有前述導熱係數範圍之第一介質材料D1搭配具有前述之導熱係數範圍及介電損耗範圍之第二介質材料D2形成的堆疊結構能明顯增加第一介質材料D1及第二介質材料D2原有的導熱效果,故可提升天線陣列模組31之散熱效果,並使天線陣列模組具有良好的天線增益。The experimental results show that the stacked structure formed by the first dielectric material D1 with the aforementioned thermal conductivity range and the second dielectric material D2 with the aforementioned thermal conductivity range and dielectric loss range can significantly increase the first dielectric material D1 and the second dielectric material D2 has the original heat conduction effect, so the heat dissipation effect of the
請參閱第6圖,其係為本揭露之第四實施例之天線陣列模組之剖面圖。天線陣列模組41包含線路層411、天線介質層412、複數個金屬片413、複數晶片414、側散熱電極415及天線保護層416。Please refer to FIG. 6, which is a cross-sectional view of the antenna array module of the fourth embodiment of the disclosure. The
線路層411包含複數個訊號線L、複數接地層G、複數個耦合槽孔S及第一介質材料D1。第一介質材料D1之底部包含複數個凹穴R,而該些晶片414設置於該些凹穴R中,並透過銲球B與該些訊號線L連接,固定於第一介質材料D1上。The
天線介質層412位於線路層411上,並包含第二介質材料D2及複數個空腔E;該些空腔E位於些複數個金屬片413及該些耦合槽孔S之間。The
該些複數個金屬片413位於天線介質層412上,毫米波訊號透過耦合槽孔S,由訊號線L耦合至複數個金屬片413。The plurality of
天線保護層416其包覆該些複數個金屬片413,並包含第三介質材料D3。The
該些側散熱電極415設置於線路層411之側邊,並與該些接地層G連接。The side
上述各元件之結構及連接關係與述實施例相似,故不在此多加贅述;與前述實施例不同的是,本實施例之天線陣列模組41包含複數個晶片414,故能應用於包含更多複數個金屬片413的大型相位陣列天線。由上述可知,本揭露之實施例之天線陣列模組11確實能達到更高的設計靈活度。The structure and connection relationship of the above-mentioned components are similar to those in the above-mentioned embodiment, so we will not repeat them here. Different from the above-mentioned embodiment, the
同樣的,本實施例之天線陣列模組41同樣為複合材料堆疊結構 ,使天線保護層416、線路層411及天線介質層412具有不同的導熱係數,且線路層411導熱係數大於天線介質層412,使天線陣列模組41之散熱效果可大幅提升。Similarly, the
當然,上述僅為舉例,天線陣列模組41之結構、介質材料之導熱係數及其各元件之間的協同關係均可依實際需求變化,本揭露並不以此實施例為限。Of course, the foregoing is only an example. The structure of the
請參閱第7圖,其係為本揭露之第五實施例之天線陣列模組之剖面圖。天線陣列模組51包含線路層511、天線介質層512、複數個金屬片513、晶片514、複數個側散熱電極515及天線保護層516。Please refer to FIG. 7, which is a cross-sectional view of the antenna array module of the fifth embodiment of the disclosure. The
線路層511包含複數個訊號線L、複數個接地層G、複數個耦合槽孔S及第一介質材料D1。第一介質材料D1之底部包含複數個凹穴R,而該些晶片514設置於該些凹穴R中,並透過銲球B固定於第一介質材料D1以與該些訊號線L連接;此外,各個耦合槽孔S上、下方皆設置有訊號線L。The
天線介質層512位於線路層511上,並包含第二介質材料D2。The
該些金屬片513位於天線介質層512上;同樣的,本實施例之毫米波訊號之傳遞過程與前述實施例相同,耦合槽孔S下方的該些訊號線L產生之毫米波訊號透過該些耦合槽孔S耦合至該些金屬片513,而耦合槽孔S上方的該些訊號線L產生之毫米波訊號同樣透過該些耦合槽孔S耦合至該些金屬片513。The
天線保護層516其包覆該些金屬片513,並包含第三介質材料D3。The
該些側散熱電極515設置於線路層511之側邊,並與該些接地層G連接。The side
上述各元件之結構及連接關係與述實施例相似,故不在此多加贅述;與前述實施例不同的是,本實施例之天線陣列模組51之接地層G之上下均可設置有訊號線L,故可達成雙軸極化的效果。由上述可知,本揭露之實施例之天線陣列模組51確實能達到更高的設計靈活度。The structure and connection relationship of the above-mentioned elements are similar to those in the above-mentioned embodiment, so I will not repeat them here. Different from the above-mentioned embodiment, the
同樣的,本實施例之天線陣列模組51同樣為複合材料堆疊結構 ,使天線保護層516、線路層511及天線介質層512具有不同的導熱係數,且線路層511導熱係數大於天線介質層512,使天線陣列模組51之散熱效果可大幅提升。Similarly, the
當然,上述僅為舉例,天線陣列模組51之結構、介質材料之導熱係數及其各元件之間的協同關係均可依實際需求變化,本揭露並不以此實施例為限。Of course, the foregoing is only an example. The structure of the
請參閱第8圖,其係為本揭露之第六實施例之天線陣列模組之示意圖。具有複數個天線、複數個晶片之天線陣列模組61,設置於基板T上以形成相位陣列天線1。Please refer to FIG. 8, which is a schematic diagram of the antenna array module of the sixth embodiment of the disclosure. An
由圖中可看出,相位陣列天線1包含二種不同結構的側散熱電極615a及615b。其中,側散熱電極615a為設置於相位陣列天線1之一側之電極板,而側散熱電極615b形狀為條狀金屬線排列,並包含複數個電極片EC,而且任二個相鄰的電極片EC之間具有一間隔N。It can be seen from the figure that the phased
由上述可知,側散熱電極也可以具有不同的結構,以滿足不同的需求,使其更能達到所欲達到的功效。It can be seen from the above that the side heat dissipation electrodes can also have different structures to meet different needs, so that it can achieve the desired effect.
當然,上述僅為舉例,側散熱電極615a、615b之結構可依實際需求變化,本揭露並不以此實施例為限。Of course, the above is only an example, and the structure of the side
請參閱第9圖及第10圖;第9圖為本揭露之第六實施例之天線陣列模組之模擬結果圖,第10圖為傳統天線陣列模組之模擬結果圖。Please refer to FIGS. 9 and 10; FIG. 9 is a simulation result diagram of the antenna array module of the sixth embodiment of the disclosure, and FIG. 10 is a simulation result diagram of a conventional antenna array module.
第9圖表示採用本揭露之實施例之導熱係數範圍及散熱結構之天線陣列模組11所構成之相位陣列天線1;其中,天線介質層112之導熱係數為0.3 W/m.K,而線路層111之導熱係數為5 W/m.K。第9圖之相位陣列天線1之天線陣列模組61 之最高溫度約為94.2度。Figure 9 shows a phased
第10圖表示傳統之相位陣列天線1’其未採用本揭露之實施例之導熱係數範圍及散熱結構。第10圖之相位陣列天線1’之天線陣列模組之最高溫度約為113度。因此,第9圖之相位陣列天線1確實具有更佳的散熱效果。Figure 10 shows a conventional phased array antenna 1'which does not use the thermal conductivity range and heat dissipation structure of the embodiment of the disclosure. The highest temperature of the antenna array module of the phased array antenna 1'in Fig. 10 is about 113 degrees. Therefore, the phased
綜上所述,根據本揭露之實施例,如第1圖所示,天線陣列模組11為特殊的複合材料堆疊結構 ,使線路層111及天線介質層112具有不同的導熱係數,且天線介質層112為低熱傳導係數且低介電損耗的材料,如此熱傳結構設計能改善天線陣列模組11之散熱效果,並使天線陣列模組具有良好的天線增益。In summary, according to the embodiment of the present disclosure, as shown in Figure 1, the
根據本揭露之實施例,天線陣列模組11之天線介質層112之導熱係數為0.2~1W/m.K,介電損耗小於0.008,而線路層111之導熱係數為4~8W/m.K,此導熱係數範圍的設計能提升天線陣列模組11之散熱效果,並使天線陣列模組具有良好的天線增益。According to the embodiment of the disclosure, the thermal conductivity of the
又,根據本揭露之實施例,天線陣列模組11具有側散熱電極115,其不但能用於固定天線陣列模組11及傳遞訊號,更能直接且有效地將晶片114產生的熱能排出,因此更進一步提升天線陣列模組11之散熱效果。Furthermore, according to the embodiment of the present disclosure, the
此外,如第3圖所示,根據本揭露之實施例,天線陣列模組21具有天線保護層216,且天線保護層216之導熱係數係為0.2~1W/m.K。In addition, as shown in FIG. 3, according to the embodiment of the present disclosure, the
另外,如第4圖所示,根據本揭露之實施例,天線陣列模組31之天線介質層312包含空腔E,此結構設計可進一步降低天線介質層312之熱傳導係數,並同時降低天線介質層312之介電損耗,而加強天線陣列模組31的效能,使天線陣列模組31之應用上更為廣泛。In addition, as shown in FIG. 4, according to the embodiment of the present disclosure, the
可見本揭露在突破先前之技術下,確實已達到所欲增進之功效,且也非熟悉該項技藝者所易於思及,其所具之進步性、實用性,顯已符合專利之申請要件,爰依法提出專利申請,懇請 貴局核准本件發明專利申請案,以勵創作,至感德便。It can be seen that this disclosure has indeed achieved the desired enhancement effect under the breakthrough of the previous technology, and it is not easy to think about by those familiar with the technology. Its progressiveness and practicality show that it has met the requirements of patent application. Yan has filed a patent application in accordance with the law, and I implore your office to approve this invention patent application to encourage creativity and make it easy.
以上所述僅為舉例性,而非為限制性者。其它任何未脫離本揭露之精神與範疇,而對其進行之等效修改或變更,均應該包含於後附之申請專利範圍中。The above description is only illustrative, and not restrictive. Any other equivalent modifications or changes that do not depart from the spirit and scope of this disclosure should be included in the scope of the attached patent application.
1‧‧‧相位陣列天線
E‧‧‧空腔
1’‧‧‧傳統相位陣列天線
R‧‧‧凹穴
11、21、31、41、51、61‧‧‧天線陣列模組
T‧‧‧基板
111、211、311、411、511‧‧‧線路層
B‧‧‧銲球
112、212、312、412、512‧‧‧天線介質層
EC‧‧‧電極片
113、213、313、413、513‧‧‧金屬片
N‧‧‧間隔
114、214、314、414、514‧‧‧晶片
D1‧‧‧第一介質材料
115、215、315、415、515、615a、615b‧‧‧側散熱電極
D2‧‧‧第二介質材料
216、316、416、516‧‧‧天線保護層
D3‧‧‧第三介質材料
L‧‧‧訊號線
S21~S25、S51~S56‧‧‧步驟流程
S‧‧‧耦合槽孔
1‧‧‧Phase Array Antenna
E‧‧‧cavity
1’‧‧‧Traditional phased array antenna
R‧‧‧
第1圖 係為本揭露之第一實施例之天線陣列模組之剖面圖。Figure 1 is a cross-sectional view of the antenna array module of the first embodiment of the disclosure.
第2圖 係為本揭露之第一實施例之天線陣列模組之製造方法之流程圖。Figure 2 is a flowchart of the manufacturing method of the antenna array module of the first embodiment of the disclosure.
第3圖 係為本揭露之第二實施例之天線陣列模組之剖面圖。Figure 3 is a cross-sectional view of the antenna array module of the second embodiment of the disclosure.
第4圖 係為本揭露之第三實施例之天線陣列模組之剖面圖。Figure 4 is a cross-sectional view of the antenna array module of the third embodiment of the disclosure.
第5圖 係為本揭露之第三實施例之天線陣列模組之製造方法之流程圖。FIG. 5 is a flowchart of the manufacturing method of the antenna array module of the third embodiment of the disclosure.
第6圖 係為本揭露之第四實施例之天線陣列模組之剖面圖。Figure 6 is a cross-sectional view of the antenna array module of the fourth embodiment of the disclosure.
第7圖 係為本揭露之第五實施例之天線陣列模組之剖面圖。Figure 7 is a cross-sectional view of the antenna array module of the fifth embodiment of the disclosure.
第8圖 係為本揭露之第六實施例之天線陣列模組之示意圖。Figure 8 is a schematic diagram of the antenna array module of the sixth embodiment of the disclosure.
第9圖 係為本揭露之第六實施例之天線陣列模組之模擬結果圖。Fig. 9 is a simulation result diagram of the antenna array module of the sixth embodiment of the disclosure.
第10圖 係為傳統天線陣列模組之模擬結果圖。Figure 10 is the simulation result of the traditional antenna array module.
11‧‧‧天線陣列模組 11‧‧‧Antenna array module
L‧‧‧訊號線 L‧‧‧ signal line
111‧‧‧線路層 111‧‧‧Line layer
112‧‧‧天線介質層 112‧‧‧Antenna dielectric layer
113‧‧‧金屬片 113‧‧‧Metal sheet
114‧‧‧晶片 114‧‧‧chip
115‧‧‧側散熱電極 115‧‧‧Side cooling electrode
G‧‧‧接地層 G‧‧‧Ground plane
S‧‧‧耦合槽孔 S‧‧‧Coupling slot
D1‧‧‧第一介質材料 D1‧‧‧The first medium material
D2‧‧‧第二介質材料 D2‧‧‧Second Medium Material
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