TWI704115B - Method for manufacturing glass substrate and glass substrate manufacturing apparatus - Google Patents

Method for manufacturing glass substrate and glass substrate manufacturing apparatus Download PDF

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TWI704115B
TWI704115B TW107146148A TW107146148A TWI704115B TW I704115 B TWI704115 B TW I704115B TW 107146148 A TW107146148 A TW 107146148A TW 107146148 A TW107146148 A TW 107146148A TW I704115 B TWI704115 B TW I704115B
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glass
glass substrate
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TW201932426A (en
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相馬早李
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日商安瀚視特控股股份有限公司
安瀚視特股份有限公司
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Abstract

本發明係以不使玻璃基板之生產性降低之方式於適當之時期停止玻璃基板之製造設備之稼動。 玻璃基板之製造方法具備:製造步驟,其使用處理裝置對熔融玻璃進行處理,並將經處理之上述熔融玻璃成形為玻璃板;分析步驟,其對上述玻璃板中所包含之氣泡中之氣體成分之濃度進行分析;判斷步驟,其使用上述氣體成分之分析結果,判斷是否停止上述製造步驟;及執行步驟,其基於上述判斷步驟中之判斷結果,執行上述製造步驟之停止。於玻璃基板之製造方法中,將上述氣體成分中CO2 、N2 、SO2 、及Ar中2種以上之成分之濃度產生變化用於停止上述製造步驟之條件。The present invention stops the operation of the manufacturing equipment of the glass substrate at an appropriate time in a manner that does not reduce the productivity of the glass substrate. The manufacturing method of the glass substrate includes: a manufacturing step, which uses a processing device to process the molten glass, and the processed molten glass is shaped into a glass plate; an analysis step, which analyzes the gas component in the bubbles contained in the glass plate The determination step, which uses the analysis result of the gas composition to determine whether to stop the manufacturing step; and the execution step, which executes the stop of the manufacturing step based on the determination result in the determination step. In the manufacturing method of the glass substrate, the concentration of two or more components of CO 2 , N 2 , SO 2 , and Ar in the above-mentioned gas components is changed to be the condition for stopping the above-mentioned manufacturing step.

Description

玻璃基板之製造方法、及玻璃基板製造裝置Manufacturing method of glass substrate and glass substrate manufacturing device

本發明係關於一種玻璃基板之製造方法、及玻璃基板製造裝置。The present invention relates to a method for manufacturing a glass substrate and a glass substrate manufacturing device.

顯示器用玻璃基板通常係經過於利用玻璃原料生成熔融玻璃後,將熔融玻璃內含之微小氣泡去除(澄清),進而將熔融玻璃成形為玻璃基板之製造步驟而製作。製造步驟使用將玻璃供給管、澄清槽等處理裝置連接而成之製造爐(製造設備)而進行。 處理裝置因與成形前之高溫熔融玻璃相接,故而必須根據熔融玻璃之溫度、所要求之玻璃基板之品質等由適當之材料構成。構成處理裝置之材料中通常使用鉑、鉑合金等鉑族金屬(專利文獻1)。鉑族金屬之熔點高,對熔融玻璃之耐腐蝕性亦優異。The glass substrate for a display is generally produced through a manufacturing process of forming molten glass from glass raw materials, removing (clarifying) the minute bubbles contained in the molten glass, and forming the molten glass into a glass substrate. The manufacturing step is performed using a manufacturing furnace (manufacturing facility) formed by connecting processing devices such as a glass supply pipe and a clarification tank. Since the processing device is connected to the high-temperature molten glass before forming, it must be constructed of appropriate materials according to the temperature of the molten glass and the required quality of the glass substrate. Platinum group metals such as platinum and platinum alloys are generally used as materials constituting the processing device (Patent Document 1). The platinum group metal has a high melting point and has excellent corrosion resistance to molten glass.

另一方面,鉑族金屬具有於高溫環境下容易氧化且容易揮發之性質。因此,若使用鉑族金屬作為處理裝置之材料,則會存在鉑族金屬之部分薄壁化而變形或破損之情形。若處理裝置變形或破損,則有熔融玻璃自處理裝置洩露致使周邊之處理裝置受損之虞。因此,期待於處理裝置變形或破損之前停止製造爐運轉。 [先前技術文獻] [專利文獻]On the other hand, platinum group metals are easily oxidized and volatilized in high temperature environments. Therefore, if platinum group metal is used as the material of the processing device, part of the platinum group metal may be thinned and deformed or damaged. If the processing device is deformed or damaged, the molten glass may leak from the processing device, causing damage to the surrounding processing device. Therefore, it is expected that the operation of the manufacturing furnace should be stopped before the processing device is deformed or damaged. [Prior Technical Literature] [Patent Literature]

[專利文獻1]日本專利特開2010-111533號公報[Patent Document 1] Japanese Patent Laid-Open No. 2010-111533

[發明所欲解決之問題][The problem to be solved by the invention]

然而,存在若使玻璃基板之製造爐停止,則無法製造玻璃基板,故而玻璃基板之生產性降低之問題。另一方面,熔融玻璃之處理裝置通常被耐火磚等耐火物覆蓋,而難以自外部確認處理裝置之狀態。因此,難以於處理裝置變形或破損之前於適當之時點使製造爐停止。However, if the manufacturing furnace of the glass substrate is stopped, the glass substrate cannot be manufactured, and therefore the productivity of the glass substrate decreases. On the other hand, the processing equipment for molten glass is usually covered with refractories such as refractory bricks, and it is difficult to confirm the state of the processing equipment from the outside. Therefore, it is difficult to stop the manufacturing furnace at an appropriate point before the processing device is deformed or damaged.

因此,本發明之目的在於提供一種可以不使玻璃基板之生產性降低之方式,於適當之時期使玻璃基板之製造設備稼動停止之玻璃基板之製造方法及玻璃基板製造裝置。 [解決問題之技術手段]Therefore, the object of the present invention is to provide a glass substrate manufacturing method and a glass substrate manufacturing device that can stop the glass substrate manufacturing equipment at an appropriate time without reducing the productivity of the glass substrate. [Technical means to solve the problem]

本發明之一態樣係一種玻璃基板之製造方法,其特徵在於具備: 製造步驟,其使用處理裝置對熔融玻璃進行處理,並將經處理之上述熔融玻璃成形為玻璃板; 分析步驟,其對上述玻璃板中所包含之氣泡中之氣體成分之濃度進行分析; 判斷步驟,其使用上述氣體成分之分析結果判斷是否停止上述製造步驟;及 執行步驟,其基於上述判斷步驟中之判斷結果,執行上述製造步驟之停止; 將上述氣體成分中CO2 、N2 、SO2 、及Ar中2種以上之成分之濃度產生變化用於停止上述製造步驟之條件。One aspect of the present invention is a method for manufacturing a glass substrate, which is characterized by comprising: a manufacturing step of using a processing device to process molten glass, and forming the processed molten glass into a glass plate; an analysis step, Analyze the concentration of the gas components in the bubbles contained in the glass plate; a judging step, which uses the analysis results of the gas components to determine whether to stop the manufacturing step; and an execution step, which executes based on the judgment result in the judgment step The stopping of the above-mentioned manufacturing step; the conditions for stopping the above-mentioned manufacturing step by changing the concentration of two or more components of CO 2 , N 2 , SO 2 , and Ar in the above-mentioned gas component.

較佳為將上述2種以上之成分濃度超過各自被容許之濃度範圍用於停止上述製造步驟之條件。It is preferable that the concentration of the above-mentioned two or more components exceeds the allowable concentration range of each as a condition for stopping the above-mentioned manufacturing step.

較佳為將特定期間設為1個區間,於每經過上述特定期間時,一面逐個偏移上述區間一面計算連續複數個區間整體之上述氣體成分之濃度平均值所得之移動平均中上述濃度產生變化用於使上述製造步驟停止之條件。It is preferable to set the specific period as an interval, and each time the specific period elapses, the above-mentioned concentration changes in the moving average obtained by calculating the average value of the concentration of the above-mentioned gas components in the entire plurality of consecutive intervals while shifting the above-mentioned interval one by one. The conditions used to stop the above manufacturing steps.

較佳為於上述判斷步驟中,根據上述氣體成分之濃度變化量,決定停止上述製造步驟之時期,且 於上述執行步驟中,基於上述判斷步驟中決定之上述時期停止上述製造步驟。Preferably, in the determination step, the time to stop the manufacturing step is determined based on the amount of change in the concentration of the gas component, and In the aforementioned execution step, the aforementioned manufacturing step is stopped based on the aforementioned period determined in the aforementioned judgment step.

較佳為於上述分析步驟中,進而對上述氣體成分之內壓、及上述氣泡距上述玻璃板表面之深度位置中之至少任一者進行分析,且 於上述判斷步驟中,進而使用與上述內壓及上述深度位置中之上述一者相關之分析結果進行上述判斷。Preferably, in the above analysis step, at least any one of the internal pressure of the gas component and the depth position of the bubble from the surface of the glass plate is further analyzed, and In the judgment step, the analysis result related to the one of the internal pressure and the depth position is further used to make the judgment.

較佳為於上述分析步驟中,將尺寸超過1 mm之上述氣泡設為分析對象。Preferably, in the above analysis step, the above-mentioned bubbles with a size exceeding 1 mm are set as the analysis object.

本發明之另一態樣係一種玻璃基板製造裝置,其特徵在於具備: 製造設備,其使用處理裝置對熔融玻璃進行處理,並將經處理之上述熔融玻璃成形為玻璃板; 分析裝置,其對上述玻璃板中所包含之氣泡中之氣體成分之濃度進行分析; 判斷裝置,其使用上述氣體成分之分析結果判斷是否停止上述製造設備之稼動;及 執行裝置,其基於藉由上述判斷裝置所得之判斷結果,執行上述製造設備稼動之停止; 將上述氣體成分中CO2 、N2 、SO2 、及Ar中2種以上之成分之濃度產生變化用於上述製造設備稼動停止之條件。 [發明之效果]Another aspect of the present invention is a glass substrate manufacturing apparatus, which is characterized by comprising: manufacturing equipment that uses a processing device to process molten glass and shape the processed molten glass into a glass plate; an analysis device for The concentration of the gas components in the bubbles contained in the glass plate is analyzed; a judging device that uses the analysis results of the gas components to determine whether to stop the operation of the manufacturing equipment; and an execution device based on the results obtained by the judging device As a result of the judgment, the operation of the above-mentioned manufacturing equipment is stopped; the concentration of two or more components of CO 2 , N 2 , SO 2 , and Ar in the above-mentioned gas composition is changed to be used as the conditions for stopping the operation of the above-mentioned manufacturing equipment. [Effects of Invention]

根據本發明,可以不使玻璃基板之生產性降低之方式,於適當之時期停止玻璃基板之製造設備之稼動。According to the present invention, it is possible to stop the operation of the glass substrate manufacturing equipment at an appropriate time without reducing the productivity of the glass substrate.

(玻璃基板之製造方法之概要) 圖1係表示利用本實施形態之玻璃基板之製造方法進行之製造步驟之一例之圖。 本實施形態之玻璃基板之製造方法具備製造步驟,上述製造步驟使用熔融玻璃之處理裝置對熔融玻璃進行處理,並將經處理之熔融玻璃成形為玻璃板。更具體而言,本實施形態之玻璃基板之製造方法主要具有熔解步驟(S1)、成形步驟(S2)、緩冷步驟(S3)、及切斷步驟(S4)。其中,至少熔解步驟(S1)及成形步驟(S2)係於製造步驟中進行。熔解步驟(S1)進行生成步驟、澄清步驟、攪拌步驟、及供給步驟。 玻璃基板之製造方法此外亦具有研削步驟、研磨步驟、洗淨步驟、檢查步驟、捆包步驟等,於捆包步驟中疊層之複數個玻璃基板被運送至訂購方之業者。(Outline of manufacturing method of glass substrate) FIG. 1 is a diagram showing an example of manufacturing steps performed by the method of manufacturing a glass substrate of this embodiment. The manufacturing method of the glass substrate of this embodiment is equipped with the manufacturing process which processes the molten glass using the processing apparatus of a molten glass, and shapes the processed molten glass into a glass plate. More specifically, the manufacturing method of the glass substrate of this embodiment mainly has a melting step (S1), a forming step (S2), a slow cooling step (S3), and a cutting step (S4). Among them, at least the melting step (S1) and the forming step (S2) are performed in the manufacturing step. In the melting step (S1), a production step, a clarification step, a stirring step, and a supply step are performed. The glass substrate manufacturing method also has a grinding step, a polishing step, a cleaning step, an inspection step, a packing step, etc. In the packing step, a plurality of laminated glass substrates are shipped to the supplier of the ordering party.

生成步驟係於熔解槽中進行。於生成步驟中,將玻璃原料投入至儲存有熔融玻璃之熔解槽中進行加熱,藉此製作熔融玻璃。 澄清步驟至少於澄清槽中進行。於澄清步驟中,調整熔融玻璃之溫度,利用澄清劑之氧化還原反應,進行熔融玻璃之澄清。澄清劑中例如使用氧化錫。The generation step is carried out in the melting tank. In the production step, the glass raw material is put into a melting tank in which molten glass is stored and heated, thereby producing molten glass. The clarification step is carried out at least in the clarification tank. In the clarification step, the temperature of the molten glass is adjusted, and the molten glass is clarified by the oxidation-reduction reaction of the clarifier. As the clarifying agent, tin oxide is used, for example.

於攪拌步驟中,使用攪拌器對攪拌槽內之熔融玻璃進行攪拌,藉此進行玻璃成分之均質化。 於供給步驟中,藉由自攪拌槽延伸之配管將熔融玻璃供給至成形裝置。In the stirring step, a stirrer is used to stir the molten glass in the stirring tank, thereby homogenizing the glass components. In the supply step, the molten glass is supplied to the forming device through the pipe extending from the stirring tank.

於成形步驟(S2)中,將熔融玻璃成形為薄片玻璃,製作薄片玻璃流。成形可使用溢流下拉法或者浮式法。 於緩冷步驟(S3)中,以成形後流動之薄片玻璃成為所需厚度且不產生內部變形、進而不會產生翹曲之方式冷卻。In the forming step (S2), the molten glass is formed into flake glass to produce a flake glass stream. The forming can use the overflow down-draw method or the float method. In the slow cooling step (S3), cooling is performed in such a way that the flowed flake glass after forming becomes the required thickness without internal deformation and no warpage.

於切斷步驟(S4)中,於切斷裝置中,將自成形裝置供給之薄片玻璃切斷成特定長度,藉此獲得板狀之玻璃板。切斷所得之玻璃板進而被切斷成特定尺寸,製作目標尺寸之玻璃基板。In the cutting step (S4), in the cutting device, the sheet glass supplied from the forming device is cut into a specific length, thereby obtaining a plate-shaped glass plate. The cut glass plate is then cut into a specific size to produce a glass substrate of the target size.

於檢查步驟中,檢查成為玻璃基板之玻璃板中所包含之氣泡、異物等內部缺陷或變形等,結果將不滿足基準之不合格品自製品中排除。In the inspection step, internal defects or deformations such as bubbles, foreign objects, etc. contained in the glass plate that become the glass substrate are inspected, and as a result, non-conforming products that do not meet the criteria are excluded from self-made products.

進而,本實施形態之玻璃基板之製造方法具有下述分析步驟、判斷步驟、及執行步驟作為自熔解步驟(S1)進行至切斷步驟(S4)之期間內(作業中)進行之其他步驟。Furthermore, the manufacturing method of the glass substrate of this embodiment has the following analysis process, a judgment process, and execution process as another process performed during the period (in operation) from the melting process (S1) to the cutting process (S4).

(玻璃基板製造裝置之概要) 圖2係模式性地表示進行本實施形態中之熔解步驟(S1)~切斷步驟(S4)之玻璃基板製造裝置之一例之圖。該裝置如圖2所示主要具有熔解裝置100、成形裝置200、及切斷裝置300。熔解裝置100具有熔解槽101、澄清槽102、攪拌槽103、及玻璃供給管104、105、106。成形裝置200具有成形體210。 玻璃基板製造裝置進而具有分析裝置、判斷裝置、執行裝置作為進行分析步驟、判斷步驟、執行步驟之各裝置。(Outline of glass substrate manufacturing equipment) Fig. 2 is a diagram schematically showing an example of a glass substrate manufacturing apparatus that performs the melting step (S1) to the cutting step (S4) in this embodiment. This device mainly includes a melting device 100, a forming device 200, and a cutting device 300 as shown in FIG. The melting apparatus 100 has a melting tank 101, a clarification tank 102, a stirring tank 103, and glass supply pipes 104, 105, and 106. The molding device 200 has a molded body 210. The glass substrate manufacturing apparatus further has an analysis device, a judgment device, and an execution device as devices for performing the analysis step, the judgment step, and the execution step.

於圖2所示之例之熔解裝置100中,玻璃原料藉由鏟鬥101d分散投入至儲存於熔解槽101中之熔融玻璃MG之表面。於熔解槽101設置有加熱熔融玻璃之加熱裝置。藉此,於熔解槽101中製作使玻璃原料熔解所得之熔融玻璃。此時,於熔解槽101內形成熔融玻璃之特定熔流(對流)。熔解槽101之熔融玻璃自設置於熔解槽101之內壁中與玻璃原料之投入口對向之側壁之流出口104a通過玻璃供給管104朝向下一步驟流出。藉此,將固定量之熔融玻璃儲存於熔解槽101中。熔融玻璃之加熱可例如使用採用燃燒器形成之燃燒氣體之氣相中之燃燒加熱、及藉由使電流流過熔融玻璃而進行之通電加熱進行,且可藉由調整該比率而調整熔融玻璃中所包含之水分量。In the melting device 100 of the example shown in FIG. 2, the glass raw material is dispersed and poured into the surface of the molten glass MG stored in the melting tank 101 by the bucket 101d. The melting tank 101 is provided with a heating device for heating molten glass. Thereby, the molten glass obtained by melting the glass material in the melting tank 101 is produced. At this time, a specific flow (convection) of molten glass is formed in the melting tank 101. The molten glass of the melting tank 101 flows out of the outflow port 104a provided on the inner wall of the melting tank 101 opposite to the input port of the glass material through the glass supply pipe 104 toward the next step. Thereby, a fixed amount of molten glass is stored in the melting tank 101. The heating of molten glass can be carried out, for example, by using combustion heating in the gas phase of combustion gas formed by a burner, and energization heating by passing an electric current through the molten glass, and the ratio can be adjusted by adjusting the ratio. The amount of water contained.

於澄清槽102中,將熔融玻璃升溫,藉由澄清劑之還原反應釋放氧氣。之後,於澄清槽102或自澄清槽102延伸之玻璃供給管105中,使熔融玻璃之溫度降低,藉由澄清劑之氧化反應,使殘留於熔融玻璃中之泡中之氣體成分再次被吸收至熔融玻璃中而消失。澄清劑之氧化反應及還原反應係藉由控制熔融玻璃之溫度而進行。In the clarification tank 102, the molten glass is heated, and oxygen is released by the reduction reaction of the clarifier. After that, in the clarification tank 102 or the glass supply pipe 105 extending from the clarification tank 102, the temperature of the molten glass is lowered, and the gas components remaining in the bubbles in the molten glass are absorbed again by the oxidation reaction of the clarifier. It disappears in the molten glass. The oxidation reaction and the reduction reaction of the clarifier are carried out by controlling the temperature of the molten glass.

於攪拌槽103中,通過玻璃供給管105供給之熔融玻璃由攪拌器103a攪拌而進行均質化。再者,攪拌槽可如圖示般設置1個,亦可設置2個。於攪拌槽103中均質化所得之熔融玻璃通過玻璃供給管106被供給至成形裝置200。In the stirring tank 103, the molten glass supplied through the glass supply pipe 105 is stirred and homogenized by the stirrer 103a. Furthermore, one stirring tank may be installed as shown in the figure, or two may be installed. The molten glass obtained by homogenization in the stirring tank 103 is supplied to the forming device 200 through the glass supply pipe 106.

再者,構成熔解裝置100之裝置中之澄清槽102、攪拌槽103、玻璃供給管104、105、106係對熔融玻璃進行處理之處理裝置。澄清槽102、攪拌槽103、玻璃供給管104、105、106相互連接,並且連接於熔解槽101及成形裝置200而構成製造爐(製造設備)。澄清槽102、攪拌槽103、玻璃供給管104、105、106中例如使用將鉑族金屬作為構成材料之容器或管。Furthermore, the clarification tank 102, the stirring tank 103, and the glass supply pipes 104, 105, and 106 of the devices constituting the melting device 100 are processing devices for processing molten glass. The clarification tank 102, the stirring tank 103, and the glass supply pipe 104, 105, 106 are mutually connected, and are connected to the melting tank 101 and the forming apparatus 200, and comprise a manufacturing furnace (manufacturing equipment). For the clarification tank 102, the stirring tank 103, and the glass supply pipes 104, 105, and 106, for example, a container or pipe using a platinum group metal as a constituent material is used.

於成形裝置200中,藉由使用成形體210之溢流下拉法由熔融玻璃MG將薄片玻璃SG成形。供給至成形體210之熔融玻璃自成形體210之上部溢出,沿著成形體210兩側之側面流下,於成形體210之下端合流,藉此形成薄片玻璃SG之熔流。成形體210之構成材料例如為耐熱磚等耐火物。成形體210係處理熔融玻璃之處理裝置。In the forming apparatus 200, the sheet glass SG is formed from the molten glass MG by the overflow down-draw method using the forming body 210. The molten glass supplied to the forming body 210 overflows from the upper part of the forming body 210, flows down along the sides of the forming body 210, and merges at the lower end of the forming body 210, thereby forming a molten flow of the sheet glass SG. The constituent material of the molded body 210 is, for example, refractories such as heat-resistant bricks. The molded body 210 is a processing device for processing molten glass.

(分析步驟、判斷步驟、執行步驟) 於圖3中示出本實施形態之玻璃基板之製造方法中進行之其他步驟。 玻璃基板之製造方法具備分析步驟(S11)、判斷步驟(S12)、及執行步驟(S13)。(Analysis step, judgment step, execution step) The other steps performed in the manufacturing method of the glass substrate of this embodiment are shown in FIG. The manufacturing method of a glass substrate includes an analysis step (S11), a judgment step (S12), and an execution step (S13).

於分析步驟(S11)中,對玻璃板中所包含之氣泡中之氣體成分之濃度進行分析。於分析步驟(S11)中,將於檢查步驟中判定為不合格品之玻璃板中氣泡之尺寸未滿足基準之玻璃板設為分析對象。不合格品通常於某一比率範圍內恆定地產生,故而可以固定時間間隔(例如1天1次)進行分析步驟。 再者,並非不合格品之玻璃板占所生產之玻璃板之比率(良品率)於作業中經常變動,但通常係以高於目標比率之比率推移,從而確保玻璃基板之生產性。In the analysis step (S11), the concentration of gas components in the bubbles contained in the glass plate is analyzed. In the analysis step (S11), the glass plate in which the size of the bubbles in the glass plate judged as a defective product in the inspection step does not meet the standard is set as the analysis object. The defective products are usually generated constantly within a certain ratio range, so the analysis step can be performed at a fixed time interval (for example, once a day). Furthermore, the ratio of glass plates that are not defective products to the glass plates produced (yield rate) changes frequently during the operation, but usually moves at a ratio higher than the target ratio to ensure the productivity of the glass substrate.

氣體成分之濃度例如可使用雷射拉曼分光法或質量分析法進行測定。於雷射拉曼分光法中,對玻璃板中所包含之氣泡照射雷射光,並檢測因氣泡內氣體而產生之拉曼散射光,藉此檢測氣體成分,並根據波峰之強度計算濃度。於質量分析法中,於真空腔室中將玻璃板破壞,使氣泡內之氣體成分釋放,使用質量分析計測定釋放之氣體成分濃度。質量分析法適於檢測Ar等稀有氣體。於本說明書中,濃度係指體積%。The concentration of the gas component can be measured using, for example, laser Raman spectroscopy or mass analysis. In the laser Raman spectroscopy method, the bubbles contained in the glass plate are irradiated with laser light, and the Raman scattered light generated by the gas in the bubbles is detected, thereby detecting the gas composition, and calculating the concentration based on the intensity of the wave peak. In the mass analysis method, the glass plate is broken in a vacuum chamber to release the gas components in the bubbles, and the mass analyzer is used to measure the concentration of the released gas components. The mass analysis method is suitable for detecting rare gases such as Ar. In this specification, concentration refers to volume %.

於判斷步驟(S12)中,使用氣體成分之分析結果,判斷是否停止製造步驟。具體而言,於判斷步驟(S12)中,研究將某一分析結果與成為比較對象之分析結果進行對比時之氣體成分之濃度變化是否滿足停止製造步驟之條件(作業停止條件)。其結果若是上述變化滿足作業停止條件之情形時,判斷停止製造步驟,而於上述變化不滿足作業停止條件之情形時,判斷使製造步驟繼續。 此處所言之分析結果可為對於1個氣泡之分析結果,亦可為對於複數個氣泡之分析結果。另一方面,氣體成分之濃度通常於相同時期中製作之玻璃基板之氣泡之間存在差異,因此,根據精度良好地進行判斷之觀點而言,較佳為將複數個氣泡之分析結果彼此進行對比,即,將2個母集團之分析結果進行對比。複數個氣泡係自例如作為分析對象之玻璃板之區域中所含之氣泡中隨機地提取。複數個氣泡可為相同玻璃板中所包含之複數個氣泡,亦可為不同玻璃板中所包含之複數個氣泡。於以下之說明中,以使用對於複數個氣泡之分析結果進行判斷步驟(S12)之情形為例進行說明。 作為上述「某一分析結果」,例如可使用良品率低於目標比率之時期中最近特定期間(例如1~數週、1~數月)內之氣體成分之濃度之平均值、或者良品率低於目標比率之整個時期中之玻璃成分之濃度平均值。 作為上述「成為比較對象之分析結果」,例如可使用良品率為目標比率以上之時期內最近之特定期間(例如1~數週、1~數月)內之氣體成分之濃度之平均值、或者良品率為目標比率以上之整個時期內之氣體成分之濃度平均值、或者作業開始當初之初始之特定期間(例如1~數週、1~數月)中之玻璃成分之濃度平均值。 又,作為判斷步驟(S12)中之較佳判斷方法,可列舉將氣體成分之濃度之移動平均之變化設為對比上述2個分析結果時之氣體成分之濃度變化。移動平均例如係藉由將特定期間(例如1~數週、1~數月)設為1個區間,每經過特定期間時一面逐一地偏移區間,一面計算連續複數個區間整體之平均值而求出。In the judgment step (S12), the analysis result of the gas composition is used to judge whether to stop the manufacturing step. Specifically, in the judging step (S12), it is studied whether the concentration change of the gas component when comparing a certain analysis result with the analysis result of the comparison target satisfies the conditions for stopping the manufacturing step (work stop conditions). As a result, if the above-mentioned change satisfies the work stop condition, it is judged to stop the manufacturing step, and if the above-mentioned change does not satisfy the work stop condition, it is judged to continue the manufacturing step. The analysis result mentioned here can be the analysis result of one bubble or the analysis result of multiple bubbles. On the other hand, the concentration of gas components usually differs between bubbles of glass substrates produced in the same period. Therefore, from the viewpoint of accurate judgment, it is better to compare the analysis results of multiple bubbles with each other , That is, compare the analysis results of the two parent groups. The plural bubbles are randomly extracted from, for example, the bubbles contained in the area of the glass plate as the analysis target. The plurality of bubbles may be a plurality of bubbles contained in the same glass plate, or may be a plurality of bubbles contained in different glass plates. In the following description, a case where the analysis result of a plurality of bubbles is used for the judgment step (S12) will be described as an example. As the above-mentioned "a certain analysis result", for example, the average value of the concentration of gas components in the most recent specific period (for example, 1 to several weeks, 1 to several months) during the period when the yield rate is lower than the target ratio, or the low yield rate The average value of the concentration of the glass component in the entire period of the target ratio. As the above-mentioned "analysis result to be compared", for example, the average value of the concentration of gas components in the nearest specific period (for example, 1~several weeks, 1~several months) during the period when the yield rate is higher than the target rate, or The good product rate is the average value of the concentration of the gas component in the entire period above the target ratio, or the average value of the concentration of the glass component in the initial specific period (such as 1 to several weeks, 1 to several months) at the beginning of the operation. In addition, as a preferable judgment method in the judgment step (S12), the change in the moving average of the concentration of the gas component can be used as the change in the concentration of the gas component when comparing the above two analysis results. For example, moving average is by setting a specific period (for example, 1~several weeks, 1~several months) as one interval, and each time a specific period passes, it shifts the interval one by one, and calculates the average value of a plurality of consecutive intervals as a whole. Find out.

執行步驟(S13)係基於判斷步驟(S12)中之判斷結果停止製造步驟。具體而言,當於判斷步驟(S12)中判斷為停止製造步驟時,停止製造步驟。製造步驟之停止可於判斷為停止製造步驟之時點進行,亦可於判斷為停止製造步驟後經過特定期間(例如,1~數週、1~數月)之時點進行。另一方面,當於判斷步驟(S12)中判斷為使製造步驟繼續時,不進行執行步驟(S13)。執行步驟可藉由控制製造設備稼動之控制裝置作為執行裝置,使製造設備稼動停止而進行。控制裝置係具有CPU(Central Processing Unit,中央處理單元)及記憶體等之電腦,且與製造設備之各處理裝置連接。控制裝置構成玻璃基板製造裝置之一部分。The execution step (S13) stops the manufacturing step based on the judgment result in the judgment step (S12). Specifically, when it is determined to stop the manufacturing step in the determination step (S12), the manufacturing step is stopped. The stop of the manufacturing step can be performed at the point when it is determined that the manufacturing step is stopped, or it can be performed at the point when a specific period (for example, 1 to several weeks, 1 to several months) has passed after the determination is to stop the manufacturing step. On the other hand, when it is determined in the determination step (S12) to continue the manufacturing step, the execution step (S13) is not performed. The execution step can be performed by using the control device that controls the operation of the manufacturing equipment as the execution device to stop the operation of the manufacturing equipment. The control device is a computer with a CPU (Central Processing Unit) and memory, etc., and is connected to each processing device of the manufacturing equipment. The control device constitutes a part of the glass substrate manufacturing device.

於本實施形態中,將氣體成分中CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化用於作業停止條件。 熔融玻璃之處理裝置由於在高溫條件下使用,故而隨著使用而容易產生劣化。尤其是於處理裝置中使用鉑族金屬之情形時,由於鉑族金屬容易揮發而進行薄壁化,因此存在開孔、變形等而導致破損之情形。若處理裝置變形或破損,則有熔融玻璃自處理裝置漏出致使周邊之處理裝置受損置於。處理裝置通常相互連接而構成1個製造爐,因此即便為了修補或更換1個處理裝置,亦不得不使整個製造爐之運轉停止。然而,若使製造爐停止,便無法製造玻璃基板,因此存在因多餘地停止而導致玻璃基板之生產性降低之問題。另一方面,處理裝置由耐火磚等耐火物覆蓋,難以自外部確認其劣化程度。因此,難以於處理裝置變形或破損之前於適當之時點使製造爐停止。 鑒於此種問題,本發明者進行了研究,結果獲得處理裝置之劣化程度與使用該處理裝置而製作之玻璃基板中所包含之氣泡之間存在相關性之見解。並且,本發明者進而進行了研究,結果明白對於氣泡中之氣體成分,CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化與處理裝置之劣化程度具有較強之相關性。因此,於本實施形態中,於作業中進行氣泡中之氣體成分濃度分析,結果根據CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度已產生變化來進行停止作業之判斷。若依據該判斷結果停止作業,則可於處理裝置進行劣化,必須進行修補或更換之適當時期停止製造爐之可能性增高。因此,根據本實施形態,可以不使玻璃基板之生產性降低之方式於適當之時期使玻璃基板之製造爐停止。In this embodiment, the concentration of two or more of CO 2 , N 2 , SO 2 , and Ar in the gas component is changed for the operation stop condition. Since the processing device of molten glass is used under high temperature conditions, it is prone to deterioration with use. Especially when platinum group metals are used in the treatment device, since the platinum group metals are easily volatilized and become thinner, they may be damaged due to holes, deformation, etc. If the processing device is deformed or damaged, molten glass will leak from the processing device, causing damage to the surrounding processing device. Processing devices are usually connected to each other to form one manufacturing furnace. Therefore, even if one processing device is repaired or replaced, the operation of the entire manufacturing furnace has to be stopped. However, if the manufacturing furnace is stopped, the glass substrate cannot be manufactured. Therefore, there is a problem that the productivity of the glass substrate is reduced due to the unnecessary stop. On the other hand, the processing device is covered with refractories such as refractory bricks, and it is difficult to confirm the degree of deterioration from the outside. Therefore, it is difficult to stop the manufacturing furnace at an appropriate point before the processing device is deformed or damaged. In view of this problem, the inventors conducted research, and as a result, obtained the knowledge that there is a correlation between the deterioration degree of the processing device and the bubbles contained in the glass substrate produced using the processing device. In addition, the inventors conducted further studies and found that the concentration of two or more of CO 2 , N 2 , SO 2 , and Ar changes in the gas components in the bubble and the degree of deterioration of the processing device is relatively strong. The relevance. Therefore, in this embodiment, the gas component concentration analysis in the bubble is performed during the operation. As a result, the operation is stopped based on the changes in the concentration of two or more components among CO 2 , N 2 , SO 2 , and Ar. judgment. If the operation is stopped based on the result of this judgment, the processing device may be degraded, and the possibility of stopping the manufacturing furnace at an appropriate time when repair or replacement is necessary increases. Therefore, according to the present embodiment, the glass substrate manufacturing furnace can be stopped at an appropriate time without reducing the productivity of the glass substrate.

再者,若處理裝置繼續劣化,則將產生例如澄清槽等處理裝置損傷,從而因熔融玻璃洩漏、成形體破裂或缺損導致薄片玻璃中之氣泡中產生異常等問題。Furthermore, if the processing device continues to deteriorate, damage to the processing device such as a clarification tank will occur, which will cause problems such as abnormalities in the bubbles in the flake glass due to leakage of molten glass, breakage of the molded body, or defects.

根據本發明者之研究,發現僅CO2 、N2 、SO2 、及Ar中之1種成分之濃度產生變化與處理裝置之劣化程度未必具有相關性。因此,即便將僅CO2 、N2 、SO2 、及Ar中之1種成分之濃度產生變化用於作業停止條件,進行作業停止,可於上述適當時期使製造爐停止之可能性亦較低。換言之,有儘管處理裝置仍可充分地使用但仍使製造爐停止之可能性高,導致玻璃基板之生產性降低之虞。According to the research of the present inventors, it is found that only one component of CO 2 , N 2 , SO 2 , and Ar concentration changes and the degree of deterioration of the processing device does not necessarily have a correlation. Therefore, even if the concentration of only one component of CO 2 , N 2 , SO 2 , and Ar is used to stop the operation, the possibility of stopping the manufacturing furnace at the appropriate time is low. . In other words, although the processing device can still be used sufficiently, the possibility of stopping the manufacturing furnace is high, which may reduce the productivity of the glass substrate.

再者,所謂CO2 、N2 、SO2 、及Ar中之「2種以上之成分之濃度產生變化」係指2種以上之成分之濃度同時產生變化。作為2種以上之成分之濃度同時產生變化之態樣,除1種成分之濃度產生變化之氣泡與另一種成分之濃度產生變化之氣泡為相同氣泡之情形以外,亦包含不同氣泡彼此且相同期間(例如1週、1月)內分析之氣泡彼此之情形。所謂相同期間意指上述「最近之特定期間」。Furthermore, the so-called "concentrations of two or more components change" in CO 2 , N 2 , SO 2 , and Ar means that the concentrations of two or more components change simultaneously. As the state where the concentration of two or more components change at the same time, in addition to the case where the concentration of one component changes and the concentration of another component changes, the bubble is the same bubble, and it also includes different bubbles with the same period. (E.g. 1 week, 1 month) the analysis of the bubbles with each other. The so-called same period means the above-mentioned "recent specific period".

又,作為氣體成分之「濃度產生變化」之情形之例,可列舉經對比之2個分析結果中變化後之氣泡分析結果(上述「某一分析結果」)中之氣體成分之濃度相對於變化前之氣泡分析結果(上述「成為比較對象之分析結果」)中之同種氣體成分之濃度,超過特定變化率產生變化。具體而言係指超過特定增加率(例如數百%)增加或超過特定降低率(例如數十%)降低(參照圖4(a))。圖4(a)係表示氣體成分之濃度變化之一例之圖。於圖4中,t1表示製作將變化前之氣泡分析結果設為對象之玻璃板之期間,t2表示製作將變化後之氣泡分析結果設為對象之玻璃板之期間。 再者,於稱為「2種以上成分之濃度產生變化」之態樣下,除包含2種以上成分之濃度均增加或降低以外,亦包含1種成分之濃度增加而另一種成分之濃度降低。 作為氣體成分之「濃度產生變化」之情形之另一例,亦可列舉經對比之2個分析結果中之「變化前之氣泡分析結果」中被容許之濃度範圍內推移之氣體成分之濃度超過「變化後之氣泡分析結果」中被容許之濃度範圍。In addition, as an example of a situation where the "concentration changes" of the gas component, the gas component concentration relative to the change in the bubble analysis result (the above-mentioned "analysis result") after the change in the comparison of the two analysis results The concentration of the same gas component in the previous bubble analysis result (the above-mentioned "analysis result to be compared") exceeds a specific rate of change and changes. Specifically, it refers to an increase in excess of a specific increase rate (for example, hundreds of%) or a decrease in excess of a specific decrease rate (for example, several tens of%) (see FIG. 4(a)). Fig. 4(a) is a diagram showing an example of changes in the concentration of gas components. In FIG. 4, t1 represents the period during which the glass plate for which the bubble analysis result before the change is made is made, and t2 represents the period during which the glass plate for which the bubble analysis result after the change is made the target is made. Furthermore, in the situation called "concentrations of more than two components change", in addition to the increase or decrease in the concentration of two or more components, the concentration of one component increases and the concentration of another component decreases. . As another example of the “concentration change” of the gas component, the concentration of the gas component that changes within the allowable concentration range in the “bubble analysis result before change” among the two compared analysis results exceeds “ The allowed concentration range in "Changed Bubble Analysis Results".

又,作為氣體成分之「濃度產生變化」之情形之另一例,可列舉於設為「變化前之氣泡分析結果」之分析對象之複數個氣泡間,某一氣體成分之濃度分散地隨機分佈於較寬濃度範圍內,相對於此,於「變化後之氣泡分析結果」中集中分佈於狹窄濃度範圍內(例如,分析所得之氣泡中之60%以上之氣泡存在於該濃度範圍內)(參照圖4(b))。圖4(b)係表示氣體成分之濃度變化之另一例之圖。於圖4(b)中,A表示較寬濃度範圍,B表示狹窄濃度範圍。 又,與之相反,相對於集中分佈於狹窄濃度範圍內,亦可列舉分散地隨機分佈於較寬濃度範圍內作為氣體成分之「濃度產生變化」之情形之另一例。In addition, as another example of the "concentration change" of the gas component, it can be cited among the multiple bubbles of the analysis object set as the "bubble analysis result before change", the concentration of a certain gas component is randomly distributed in In a wide concentration range, in contrast to this, in the "Changed Bubble Analysis Results", it is concentrated in a narrow concentration range (for example, more than 60% of the bubbles in the analysis result are present in the concentration range) (refer to Figure 4(b)). Fig. 4(b) is a diagram showing another example of a change in the concentration of a gas component. In Figure 4(b), A represents a wide concentration range, and B represents a narrow concentration range. On the contrary, in contrast to the concentrated distribution in a narrow concentration range, it is also possible to cite another example where the gas component is randomly distributed in a wide concentration range as a "concentration change".

又,作為氣體成分之「濃度產生變化」之情形之另一例,亦可列舉於「變化前之氣泡分析結果」不存在上述4種氣泡成分中之某2種以上之氣體成分之濃度範圍內,於「變化後之氣泡分析結果」中存在該氣體成分,或者反過來,於存在上述4種氣泡成分中之某2種以上之氣體成分之濃度範圍內,不存在該氣體成分。 作為氣體成分之「內壓產生變化」之情形之另一例,亦可列舉某一濃度範圍內存在之氣泡數產生變化。In addition, as another example of the "concentration change" of the gas component, it can also be cited in the "bubble analysis result before change" within the concentration range where any two or more of the above four bubble components do not exist. The gas component is present in the "Changed bubble analysis result", or vice versa, the gas component does not exist within the concentration range of the gas component of two or more of the above four bubble components. As another example of the "internal pressure change" of the gas composition, the change in the number of bubbles in a certain concentration range can also be cited.

根據本發明者之研究,發現處理裝置劣化時濃度變化之氣體之種類或變化之方式(增加或減少、是否被容許之濃度範圍內、集中抑或是分散於狹窄之濃度範圍內、存在於抑或是不再存在於某一濃度範圍內)存在因製造爐而異之情形。因此,上述「特定之變化率」、「特定之濃度範圍」等判斷條件較佳為針對每一製造爐進行設定。According to the inventor’s research, it was discovered that the type of gas whose concentration changes when the treatment device deteriorates or the way of change (increase or decrease, whether it is within the allowable concentration range, concentrated or dispersed in a narrow concentration range, whether it exists in No longer exists in a certain concentration range) There are different situations depending on the manufacturing furnace. Therefore, the judgment conditions such as the above-mentioned "specific change rate" and "specific concentration range" are preferably set for each manufacturing furnace.

根據一實施形態,較佳為於判斷步驟(S12)中,根據氣體成分之濃度變化量,決定使製造步驟停止之時期,於執行步驟(S13)中,基於判斷步驟(S12)中決定之時期使製造步驟停止。 根據本發明者之研究,發現存在氣體成分之濃度之變化率對應於處理裝置之劣化程度而變化之情形。例如,存在根據製造爐,處理裝置之劣化程度越是進展(越接近壽命),則氣體成分之濃度變化率越是大幅變化之情形。關於這種製造爐,可於變化率較小時(例如未達0%~30%),將製造爐之停止時期設定為較晚之時期(例如進行判斷步驟後數月~半年後),於變化率較大時(例如30%以上),將製造爐之停止時期設定為較早之時期(例如進行判斷步驟後1個月~1週後)。藉此,可儘可能長時間地使用處理裝置,並且可於更適當之時期使製造爐停止,藉此,抑制玻璃基板之生產性降低之效果提高。 又,氣體成分之濃度變化量係藉由判斷步驟中判斷之第1濃度(變化前之氣泡分析結果之濃度)與第2濃度(變化後之氣泡分析結果之濃度)之差求出。於根據第1濃度-第2濃度求出之濃度差為例如20%以上之情形時,判斷為變化量大,於例如未達20%之情形時,判斷為變化量小。亦可根據氣體成分之種類使氣體成分之濃度變化量(根據第1濃度-第2濃度求出之濃度差)之判斷基準改變(不同)。例如,關於Ar,於濃度差為10%以上之情形時,判斷為變化量大,於未達10%之情形時,判斷為變化量小,而另一方面關於N2 ,於濃度差為30%以上之情形時,判斷為變化量大,於未達30%之情形時,判斷為變化量小。According to one embodiment, it is preferable that in the judgment step (S12), the time to stop the manufacturing step is determined based on the concentration change of the gas component, and in the execution step (S13), based on the time determined in the judgment step (S12) Stop the manufacturing step. According to the research of the inventor, it is found that there is a situation in which the rate of change of the concentration of the gas component changes corresponding to the degree of deterioration of the processing device. For example, depending on the manufacturing furnace, the more the degree of deterioration of the processing device progresses (the closer the life is), the more the rate of change in the concentration of the gas component changes. Regarding this kind of manufacturing furnace, when the rate of change is small (for example, less than 0% to 30%), the stop period of the manufacturing furnace can be set to a later period (for example, a few months to half a year after the judgment step). When the rate of change is large (for example, 30% or more), set the stop period of the manufacturing furnace to an earlier period (for example, one month to one week after the judgment step). Thereby, the processing device can be used as long as possible, and the manufacturing furnace can be stopped at a more appropriate time, thereby improving the effect of suppressing the decrease in the productivity of the glass substrate. In addition, the concentration change amount of the gas component is calculated from the difference between the first concentration (the concentration of the bubble analysis result before the change) and the second concentration (the concentration of the bubble analysis result after the change) determined in the determination step. When the concentration difference obtained from the first concentration to the second concentration is, for example, 20% or more, it is determined that the amount of change is large, and when, for example, it is less than 20%, it is determined that the amount of change is small. It is also possible to change (different) the judgment criterion of the concentration change amount of the gas component (concentration difference calculated from the first concentration-the second concentration) according to the type of gas component. For example, regarding Ar, when the concentration difference is more than 10%, the change is judged to be large, and when the concentration difference is less than 10%, the change is judged to be small. On the other hand, for N 2 , the concentration difference is 30 If it exceeds %, it is judged that the amount of change is large, and if it is less than 30%, it is judged that the amount of change is small.

根據一實施形態,較佳為於分析步驟(S11)中,進而對氣體成分之內壓、及氣泡距玻璃板表面之深度位置中之至少任一者進行分析,於判斷步驟(S12)中,進而使用與內壓及深度位置中之至少任一者相關之分析結果來進行判斷。 氣體成分之內壓例如可於真空腔室中將玻璃板破壞而釋放氣泡內之氣體成分,使用壓力計檢測釋放之氣體成分之總壓,使用氣體成分之濃度作為氣體成分之分壓來計算。於分析步驟(S11)中,將氣體成分之濃度與所求出之分壓建立關聯。 氣泡之深度位置例如可使用具備於深度方向上對焦之功能之顯微鏡進行測定。 根據本發明者之研究得知,CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化之氣泡具有根據製造爐而氣體成分之內壓或氣泡之深度位置具有特徵。例如,存在根據製造爐而SO2 之濃度增高之多數氣泡內壓低,CO2 、Ar、CO2 之濃度降低之多數氣泡內壓低之特徵。因此,例如關於SO2 之濃度高但內壓高之氣泡或CO2 、Ar、CO2 之濃度低但內壓高之氣泡等不滿足上述特徵之氣泡,即便因製造爐不同,CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化之情形時,亦存在與處理裝置之劣化程度不具有關聯性之可能性。而且,CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化之氣泡具有如下特徵:因製造爐不同,例如隨機地位於玻璃板之板厚方向上之氣泡集中地位於板厚方向之中央部(自沿著板厚方向之板厚中心到板厚方向兩側各自為板厚之10%之區域)、或主表面附近(與主表面相距板厚10%之深度區域)(例如,位於分析所得之氣泡中60%以上之氣泡位於該深度範圍)等位於與濃度變化前不同之深度位置。因此,可於判斷步驟(S12)中,藉由將不滿足上述特徵之氣泡排除於分析結果之外,而以高精度判斷是否停止製造爐稼動。藉由依據該判斷結果停止作業,可於適當之時期使製造爐停止之可能性進而增高。According to one embodiment, it is preferable that in the analysis step (S11), at least any one of the internal pressure of the gas component and the depth position of the bubble from the surface of the glass plate is analyzed, and in the judgment step (S12), Furthermore, the analysis result related to at least any one of the internal pressure and the depth position is used for judgment. The internal pressure of the gas component can be calculated by breaking the glass plate in a vacuum chamber to release the gas component in the bubble, using a pressure gauge to detect the total pressure of the released gas component, and using the concentration of the gas component as the partial pressure of the gas component. In the analysis step (S11), the concentration of the gas component is associated with the calculated partial pressure. The depth position of the bubbles can be measured, for example, using a microscope with a function of focusing in the depth direction. According to the research of the present inventor, the bubble whose concentration of two or more of CO 2 , N 2 , SO 2 , and Ar changes has characteristics according to the internal pressure of the gas component or the depth position of the bubble according to the manufacturing furnace . For example, depending on the manufacturing furnace, there is a feature that the internal pressure of most bubbles is low when the concentration of SO 2 increases, and the internal pressure of most bubbles decreases when the concentration of CO 2 , Ar, and CO 2 decreases. Therefore, for example, for bubbles with high SO 2 concentration but high internal pressure, or bubbles with low CO 2 , Ar, CO 2 concentration but high internal pressure, and other bubbles that do not meet the above characteristics, even if the manufacturing furnace is different, CO 2 , N 2. When the concentration of two or more components in SO 2 and Ar changes, there is also the possibility that it is not related to the degree of deterioration of the processing device. In addition, bubbles in which the concentration of two or more of CO 2 , N 2 , SO 2 , and Ar are changed have the following characteristics: depending on the manufacturing furnace, for example, bubbles are randomly located in the thickness direction of the glass plate. Located in the center of the thickness direction (the area from the center of the thickness along the thickness direction to each side of the thickness direction is 10% of the thickness), or near the main surface (the depth of the main surface is 10% of the thickness Area) (for example, more than 60% of the bubbles in the analysis are located in the depth range), etc. are located at a different depth position than before the concentration change. Therefore, in the judgment step (S12), by excluding the bubbles that do not satisfy the above characteristics from the analysis result, it is possible to judge with high accuracy whether to stop the operation of the manufacturing furnace. By stopping the operation based on the judgment result, the possibility of stopping the manufacturing furnace at an appropriate time is further increased.

根據一實施形態,較佳為於分析步驟(S11)中,將尺寸超過1 mm之氣泡設為分析對象。所謂尺寸意指氣泡之最大長度。尺寸超過1 mm之氣泡通常具有沿著玻璃基板之主表面之延伸方向變形之形狀,因此,氣泡之最大長度意指於板厚方向上觀察俯視玻璃基板時該氣泡之最大長度。氣泡尺寸之上限值例如為12 mm。氣泡之尺寸可使用雷射顯微鏡進行測定。根據本發明者之研究發現,尺寸為1 mm以下之氣泡與超過1 mm之氣泡中,氣體成分之種類及組成等較大地不同,並且關於尺寸為1 mm以下之氣泡,2種以上之氣體成分之變化與處理裝置之劣化程度之相關性較小。因此,藉由將尺寸超過1 mm之氣泡設為分析對象,可取得高質量之分析結果,從而可於更適當之時期使玻璃基板之製造爐停止。 再者,包含尺寸超過1 mm之氣泡之玻璃基板明顯為不合格品。若於自相同玻璃板切取所得之複數個玻璃基板之中,較多地包含此種玻璃基板,則良品率下降,從而生產性下降。因此,就提高玻璃基板之生產性之方面而言,較理想為將其自進行研削步驟、研磨步驟、洗淨步驟等之對象中排除。即,與有無尺寸超過1 mm之氣泡相關之檢查較佳為於切斷步驟(S4)之後且研削步驟之前進行。According to one embodiment, it is preferable that in the analysis step (S11), bubbles with a size exceeding 1 mm are set as the analysis target. The so-called size means the maximum length of the bubble. Bubbles with a size of more than 1 mm usually have a deformed shape along the extension direction of the main surface of the glass substrate. Therefore, the maximum length of the bubble means the maximum length of the bubble when the glass substrate is viewed in the thickness direction. The upper limit of the bubble size is, for example, 12 mm. The size of the bubbles can be measured using a laser microscope. According to the inventor’s research, the type and composition of gas components are quite different for bubbles with a size of 1 mm or less and bubbles with a size of more than 1 mm. For bubbles with a size of 1 mm or less, there are two or more gas components. The correlation between the change and the degree of deterioration of the processing device is relatively small. Therefore, by setting bubbles with a size of more than 1 mm as the analysis target, high-quality analysis results can be obtained, and the glass substrate manufacturing furnace can be stopped at a more appropriate time. Furthermore, glass substrates containing bubbles with a size of more than 1 mm are obviously defective. If a large number of such glass substrates are included among a plurality of glass substrates cut from the same glass plate, the yield rate decreases, and productivity decreases. Therefore, in terms of improving the productivity of the glass substrate, it is desirable to exclude it from the objects of the grinding step, the polishing step, the cleaning step, and the like. That is, the inspection related to the presence or absence of bubbles with a size exceeding 1 mm is preferably performed after the cutting step (S4) and before the grinding step.

根據本實施形態,於作業中進行氣泡中之氣體成分之濃度之分析,結果基於CO2 、N2 、SO2 、及Ar中之2種以上之成分之濃度產生變化來進行停止作業之判斷。若依據該判斷結果停止作業,則可於處理裝置進行劣化而必須修補或更換之適當時期使製造爐停止之可能性增高。因此,根據本實施形態,可以不使玻璃基板之生產性降低之方式於適當之時期使玻璃基板之製造爐停止。又,根據本實施形態,藉由於處理裝置變形或破損之前停止作業,可防止玻璃自處理裝置漏出等,從而可防止周邊之處理裝置受損。因此,可繼續使用周邊之處理裝置。又,於修補或更換處理裝置時,無須進行漏出之玻璃之處理或周邊之處理裝置之修補或更換,因此可縮短停止作業之期間。According to this embodiment, the concentration of gas components in the bubbles is analyzed during operation, and the result is based on changes in the concentrations of two or more components among CO 2 , N 2 , SO 2 , and Ar to make a judgment to stop the operation. If the operation is stopped based on the judgment result, the possibility of stopping the manufacturing furnace may increase at an appropriate time when the processing device is deteriorated and must be repaired or replaced. Therefore, according to the present embodiment, the glass substrate manufacturing furnace can be stopped at an appropriate time without reducing the productivity of the glass substrate. In addition, according to the present embodiment, by stopping the operation before the processing device is deformed or broken, it is possible to prevent the glass from leaking from the processing device, etc., thereby preventing damage to the surrounding processing device. Therefore, you can continue to use peripheral processing devices. In addition, when repairing or replacing the processing device, there is no need to process the leaked glass or repair or replace the surrounding processing device, so the period of stopping the operation can be shortened.

應用本實施形態之玻璃基板例如包含包括以下組成之無鹼玻璃。 SiO2 :55-80質量% Al2 O3 :8-20質量% B2 O3 :0-18質量% RO 0~17莫耳%(RO係MgO、CaO、SrO及BaO之總量)、 R'2 O 0~2莫耳%(R'2 O係Li2 O、Na2 O及K2 O之總量)。The glass substrate to which this embodiment is applied includes, for example, alkali-free glass having the following composition. SiO 2 : 55-80 mass% Al 2 O 3 : 8-20 mass% B 2 O 3 : 0-18 mass% RO 0-17 mol% (RO is the total amount of MgO, CaO, SrO and BaO), R '2 O 0 ~ 2 mole% (R' 2 O-based Li 2 O, Na 2 O and K 2 O of the total).

就縮小熱收縮率之觀點而言,SiO2 較佳為60~75質量%,進而較佳為63~72質量%。 較佳為RO之中,MgO為0~10質量%、CaO為0~10質量%、SrO為0~10質量%、BaO為0~10質量%。From the viewpoint of reducing the thermal shrinkage rate, SiO 2 is preferably 60 to 75% by mass, and more preferably 63 to 72% by mass. Preferably, among RO, MgO is 0-10% by mass, CaO is 0-10% by mass, SrO is 0-10% by mass, and BaO is 0-10% by mass.

又,亦可為至少包含SiO2 、Al2 O3 、B2 O3 、及RO且莫耳比((2×SiO2 )+Al2 O3 )/((2×B2 O3 )+RO)為4.5以上之玻璃。又,較佳為包含MgO、CaO、SrO、及BaO之至少任一種且莫耳比(BaO+SrO)/RO為0.1以上。In addition, it may include at least SiO 2 , Al 2 O 3 , B 2 O 3 , and RO and a molar ratio ((2×SiO 2 )+Al 2 O 3 )/((2×B 2 O 3 )+ RO) is 4.5 or more glass. Moreover, it is preferable to contain at least any one of MgO, CaO, SrO, and BaO, and the molar ratio (BaO+SrO)/RO is 0.1 or more.

又,質量%表示之B2 O3 之含有率之2倍與質量%表示之RO之含有率之合計較佳為30質量%以下,較佳為10~30質量%。 進而,較佳為於熔融玻璃中合計包含0.05~1.5質量%之價數變動之金屬之氧化物(氧化錫、氧化鐵)。 較佳為實質上不包含AS2 O3 、Sb2 O3 、PbO,但亦可任意包含該等。 又,玻璃中合計包含0.05~1.5質量%之價數變動之金屬氧化物(氧化錫、氧化鐵)且實質上不包含As2 O3 、Sb2 O3 及PbO可任意而非必須。In addition, the total of twice the content of B 2 O 3 expressed by mass% and the content of RO expressed by mass% is preferably 30 mass% or less, more preferably 10 to 30 mass %. Furthermore, it is preferable that a total of 0.05 to 1.5% by mass of metal oxides (tin oxide, iron oxide) of varying valence are contained in the molten glass. Preferably, AS 2 O 3 , Sb 2 O 3 , and PbO are not substantially included, but these may be included arbitrarily. In addition, the glass contains metal oxides (tin oxide, iron oxide) with valence fluctuations of 0.05 to 1.5% by mass in total, and substantially does not contain As 2 O 3 , Sb 2 O 3, and PbO. It is optional but not essential.

於本實施形態中製造之玻璃基板適合包含平板顯示器用玻璃基板之顯示器用玻璃基板。適合使用IGZO(銦、鎵、鋅、氧)等氧化物半導體之氧化物半導體顯示器用玻璃基板及使用LTPS(低溫度多晶矽)半導體之LTPS顯示器用玻璃基板。又,於本實施形態中製造之玻璃基板適合要求鹼金屬氧化物之含量極少之液晶顯示器用玻璃基板。又,亦適合有機EL(Electroluminescence,電致發光)顯示器用玻璃基板。換言之,本實施形態之玻璃基板之製造方法適合顯示器用玻璃基板之製造,特別適合液晶顯示器用玻璃基板之製造。再者,亦可用作移動終端設備等之顯示器或殼體用之覆蓋玻璃、觸控面板、太陽電池之玻璃基板或覆蓋玻璃。尤其適合使用多晶矽TFT(thin-film transistor,薄膜電晶體)之液晶顯示器用玻璃基板。 又,本實施形態中製造之玻璃基板亦可應用於覆蓋玻璃、磁盤用玻璃、太陽電池用玻璃基板等。The glass substrate manufactured in this embodiment is suitable for a glass substrate for a display including a glass substrate for a flat panel display. Suitable for glass substrates for oxide semiconductor displays using oxide semiconductors such as IGZO (indium, gallium, zinc, and oxygen) and glass substrates for LTPS displays using LTPS (low temperature polysilicon) semiconductors. Moreover, the glass substrate manufactured in this embodiment is suitable for the glass substrate for liquid crystal displays which requires very little content of alkali metal oxide. It is also suitable for glass substrates for organic EL (Electroluminescence) displays. In other words, the manufacturing method of the glass substrate of this embodiment is suitable for the manufacture of glass substrates for displays, and is particularly suitable for the manufacture of glass substrates for liquid crystal displays. Furthermore, it can also be used as cover glass for display or housing of mobile terminal equipment, touch panel, glass substrate or cover glass for solar cell. Especially suitable for glass substrates for liquid crystal displays using polysilicon TFT (thin-film transistor). In addition, the glass substrate manufactured in this embodiment can also be applied to cover glass, glass for magnetic disks, glass substrates for solar cells, and the like.

(實驗例) 進行上述實施形態之製造步驟而製作玻璃板,針對具有尺寸超過1 mm之氣泡之玻璃板,定期進行氣泡中之氣體成分之濃度之分析。接下來,將1個月設為1個區間,並針對CO2 、N2 、SO2 、及Ar之各成分之濃度,監視3個區間(3個月)之移動平均。各區間內之濃度之平均值設為針對自1個月內製作之玻璃板中隨機抽選之30個氣泡進行測定所得之濃度之平均值。 當CO2 、N2 、SO2 、及Ar中之2種以上之成分之移動平均超過針對各成分而預先規定之濃度範圍產生變化時,停止製造爐之運轉(實施例)。將耐火物卸除並確認各處理裝置之劣化程度後,確認到澄清槽之主體即澄清管中不與熔融玻璃接觸之部分(與氣相空間相接之壁部)開孔。又,該孔係大小不會對繼續作業造成阻礙之孔。想到自該孔進入至管內之空氣對熔融玻璃造成了影響作為2種以上之成分之移動平均如上所述般變化之原因。 另一方面,以與實施例相同之要點製作玻璃板,當CO2 、N2 、SO2 、及Ar中之1種成分超過上述溫度範圍產生變化時,停止製造爐之運轉(比較例)。將耐火物卸除並確認各處理裝置之劣化程度,於任一處理裝置中均未確認到產生孔或變形等,而為可充分使用之狀態。 再者,以與實施例相同之要領製作玻璃板,於對於CO2 、N2 、SO2 、及Ar中之2種以上之成分之移動平均確認到與實施例相同之變化時,未停止製造爐之稼動,進而,於繼續作業6個月~9個月之時間點,良品率較大地下降,故停止稼動(參考例)。於確認各處理裝置之劣化程度之後,除了確認大小大於實施例中確認之孔且對繼續作業造成阻礙之孔以外,確認澄清管之上述壁部隨著靠近熔融玻璃之液面位置而如下垂般變形之部位。(Experimental example) Perform the manufacturing steps of the above embodiment to make a glass plate. For the glass plate with bubbles with a size of more than 1 mm, analyze the concentration of gas components in the bubbles on a regular basis. Next, set 1 month as 1 interval, and monitor the moving average of 3 intervals (3 months) for the concentration of each component of CO 2 , N 2 , SO 2 , and Ar. The average value of the concentration in each interval is set as the average value of the concentration of 30 bubbles randomly selected from the glass plate produced in 1 month. When the moving average of two or more of CO 2 , N 2 , SO 2 , and Ar changes beyond the predetermined concentration range for each component, the operation of the manufacturing furnace is stopped (Example). After removing the refractory and confirming the degree of deterioration of each treatment device, it was confirmed that the main body of the clarification tank, that is, the part of the clarification tube that does not contact the molten glass (the wall connected to the gas phase space) had holes. In addition, the size of the hole is a hole that will not hinder the continued operation. It is thought that the air entering the tube from the hole affects the molten glass as the reason why the moving average of two or more components changes as described above. On the other hand, the glass plate was produced with the same points as the examples, and when one of CO 2 , N 2 , SO 2 , and Ar changed over the above temperature range, the operation of the production furnace was stopped (comparative example). The refractory was removed and the degree of deterioration of each treatment device was confirmed. No holes or deformation were confirmed in any treatment device, and it was in a fully usable state. Furthermore, the glass plate was produced by the same method as the example, and the production was not stopped when the moving average of two or more components of CO 2 , N 2 , SO 2 , and Ar was confirmed to be the same as the example. The operation of the furnace, and furthermore, the yield rate dropped significantly when the operation was continued for 6 to 9 months, so the operation was stopped (reference example). After confirming the degree of deterioration of each processing device, in addition to confirming that the size is larger than the hole confirmed in the example and obstructing the continued operation, confirm that the above-mentioned wall of the clarification tube sags as it approaches the liquid level position of the molten glass Deformed parts.

以上,基於圖式對本實施形態進行了說明,但具體構成並不限定於上述實施形態,可於不脫離發明主旨之範圍內進行變更。As mentioned above, the present embodiment has been described based on the drawings, but the specific configuration is not limited to the above-mentioned embodiment, and can be changed without departing from the spirit of the invention.

100‧‧‧熔解裝置 101‧‧‧熔解槽 101d‧‧‧鏟鬥 102‧‧‧澄清槽 103‧‧‧攪拌槽 103a‧‧‧攪拌器 104‧‧‧玻璃供給管 104a‧‧‧流出口 105‧‧‧玻璃供給管 106‧‧‧玻璃供給管 200‧‧‧成形裝置 210‧‧‧成形體 300‧‧‧切斷裝置 A‧‧‧較寬濃度範圍 B‧‧‧狹窄濃度範圍 MG‧‧‧熔融玻璃 SG‧‧‧薄片玻璃 t1‧‧‧期間 t2‧‧‧期間100‧‧‧Melting Device 101‧‧‧Melt Tank 101d‧‧‧ Bucket 102‧‧‧Clarification tank 103‧‧‧Stirring tank 103a‧‧‧Agitator 104‧‧‧Glass Supply Pipe 104a‧‧‧Outlet 105‧‧‧Glass Supply Pipe 106‧‧‧Glass Supply Pipe 200‧‧‧Forming device 210‧‧‧Form 300‧‧‧Cutting device A‧‧‧Wide concentration range B‧‧‧Narrow concentration range MG‧‧‧Molten glass SG‧‧‧Slice glass t1‧‧‧period t2‧‧‧period

圖1係表示玻璃基板之製造方法之製造步驟之一例之流程圖。 圖2係表示玻璃基板製造裝置之模式圖。 圖3係表示玻璃基板之製造方法之分析步驟至執行步驟之流程圖。 圖4(a)、(b)係表示氣體成分之濃度變化之一例之圖。Fig. 1 is a flowchart showing an example of the manufacturing steps of the manufacturing method of the glass substrate. Fig. 2 is a schematic diagram showing a glass substrate manufacturing apparatus. Fig. 3 is a flowchart showing the analysis step to the execution step of the glass substrate manufacturing method. Figures 4(a) and (b) are diagrams showing an example of changes in the concentration of gas components.

Claims (7)

一種玻璃基板之製造方法,其特徵在於具備:製造步驟,其使用處理裝置對熔融玻璃進行處理,並將經處理之上述熔融玻璃成形為玻璃板;分析步驟,其對上述玻璃板中所含之氣泡中之氣體成分之濃度進行分析;判斷步驟,其使用上述氣體成分之分析結果,判斷是否停止上述製造步驟;及執行步驟,其基於上述判斷步驟中之判斷結果,執行上述製造步驟之停止;將上述氣體成分中CO2、N2、SO2、及Ar中之2種以上之成分之濃度產生變化一事用於停止上述製造步驟之條件。 A method of manufacturing a glass substrate, characterized by comprising: a manufacturing step of processing molten glass using a processing device, and shaping the processed molten glass into a glass plate; an analysis step of processing the molten glass contained in the glass plate Analyze the concentration of the gas components in the bubbles; a determination step, which uses the analysis results of the above gas components to determine whether to stop the above manufacturing step; and an execution step, which executes the stop of the above manufacturing step based on the determination result in the above determination step; The change in the concentration of two or more of CO 2 , N 2 , SO 2 , and Ar in the above-mentioned gas components is used as a condition for stopping the above-mentioned manufacturing step. 如請求項1之玻璃基板之製造方法,其中將上述2種以上之成分濃度超過各自容許之濃度範圍用於停止上述製造步驟之條件。 The method for manufacturing a glass substrate according to claim 1, wherein the concentration of the above two or more components exceeds the allowable concentration range of each as a condition for stopping the above manufacturing step. 如請求項1或2之玻璃基板之製造方法,其中將特定期間設為1個區間,於每經過上述特定期間時,將一面逐個偏移上述區間一面計算連續複數個區間整體之上述氣體成分之濃度平均值所得之移動平均中上述濃度產生變化一事用於停止上述製造步驟之條件。 For example, the method for manufacturing a glass substrate of claim 1 or 2, wherein a specific period is set as one interval, and each time the specific period elapses, one side is shifted from the interval one by one while calculating the total gas composition of the plurality of consecutive intervals In the moving average obtained from the concentration average, the change in the above-mentioned concentration is used to stop the above-mentioned manufacturing step. 如請求項1或2之玻璃基板之製造方法,其中於上述判斷步驟中,根 據上述氣體成分之濃度變化量,決定停止上述製造步驟之時期,且於上述執行步驟中,基於上述判斷步驟中決定之上述時期,停止上述製造步驟。 Such as the manufacturing method of the glass substrate of claim 1 or 2, wherein in the above determination step, According to the concentration change amount of the gas component, the time to stop the manufacturing step is determined, and in the execution step, the manufacturing step is stopped based on the time determined in the judging step. 如請求項1或2之玻璃基板之製造方法,其中於上述分析步驟中,進而對上述氣體成分之內壓、及上述氣泡距上述玻璃板表面之深度位置中之至少任一者進行分析,且於上述判斷步驟中,進而使用與上述內壓及上述深度位置中之上述一者相關之分析結果進行上述判斷。 The method for manufacturing a glass substrate according to claim 1 or 2, wherein in the analysis step, at least any one of the internal pressure of the gas component and the depth position of the bubble from the surface of the glass plate is analyzed, and In the judgment step, the analysis result related to the one of the internal pressure and the depth position is further used to make the judgment. 如請求項1或2之玻璃基板之製造方法,其中於上述分析步驟中,將尺寸超過1mm之上述氣泡設為分析對象。 The method for manufacturing a glass substrate of claim 1 or 2, wherein in the above analysis step, the above-mentioned bubbles with a size exceeding 1 mm are set as the analysis object. 一種玻璃基板製造裝置,其特徵在於具備:製造設備,其使用處理裝置對熔融玻璃進行處理,並將經處理之上述熔融玻璃成形為玻璃板;分析裝置,其對上述玻璃板中所含之氣泡中之氣體成分之濃度進行分析;判斷裝置,其使用上述氣體成分之分析結果,判斷是否停止上述製造設備之稼動;及執行裝置,其基於上述判斷裝置之判斷結果,執行上述製造設備稼動之停止;將上述氣體成分中CO2、N2、SO2、及Ar中之2種以上成分之濃度產生變化一事用於上述製造設備稼動停止之條件。 A glass substrate manufacturing device, characterized by comprising: manufacturing equipment that uses a processing device to process molten glass and shape the processed molten glass into a glass plate; an analysis device that detects air bubbles contained in the glass plate Analyze the concentration of the gas component in the gas composition; a judgment device that uses the analysis result of the gas component to judge whether to stop the operation of the manufacturing equipment; and an execution device that executes the stop of the operation of the manufacturing equipment based on the judgment result of the judgment device ; The change in the concentration of two or more of CO 2 , N 2 , SO 2 , and Ar in the above-mentioned gas components is used for the above-mentioned conditions for stopping the operation of the manufacturing equipment.
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