TWI703686B - Chip on film package structure - Google Patents
Chip on film package structure Download PDFInfo
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- TWI703686B TWI703686B TW108112507A TW108112507A TWI703686B TW I703686 B TWI703686 B TW I703686B TW 108112507 A TW108112507 A TW 108112507A TW 108112507 A TW108112507 A TW 108112507A TW I703686 B TWI703686 B TW I703686B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
Abstract
Description
本發明是有關於一種封裝結構,且特別是有關於一種薄膜覆晶封裝結構。The present invention relates to a packaging structure, and more particularly to a thin-film-on-chip packaging structure.
薄膜覆晶(Chip on Film, COF)封裝結構為常見的液晶顯示器的驅動晶片的封裝型態。隨著晶片上的凸塊數的增加、引腳數的增加與引腳間距的微縮,凸塊與引腳的佈局方式日益受限。若凸塊與引腳的佈局方式不當,則在覆晶接合的程序中容易產生橋接現象。The chip on film (COF) package structure is a common package type of the driver chip of the liquid crystal display. With the increase in the number of bumps on the wafer, the increase in the number of pins, and the shrinking of the pin pitch, the layout of bumps and pins is increasingly restricted. If the layout of bumps and pins is improper, bridging is likely to occur in the flip chip bonding process.
目前已有雙面線路薄膜的技術被提出,其採用一對一的配置方式透過相應數量的導電貫孔電性連接位於薄膜的上表面的上引腳與位於薄膜的下表面的下引腳,據以提高凸塊與引腳的佈局彈性。上述一對一的配置方式所需設置的導電貫孔的數量較多,需佔用薄膜的面積較大,對於引腳佈局仍形成某種程度的限制,故高引腳數、高凸塊數以及細間距的需求仍有待更進一步的改良設計方能滿足。At present, the technology of double-sided circuit film has been proposed, which uses a one-to-one configuration to electrically connect the upper pins on the upper surface of the film and the lower pins on the lower surface of the film through a corresponding number of conductive through holes. Accordingly, the layout flexibility of bumps and pins can be improved. The above-mentioned one-to-one configuration requires a large number of conductive through holes, which requires a large area of the film, and still poses a certain degree of restriction on the pin layout, so high pin count, high bump count and The need for fine pitch still needs to be further improved and designed.
本發明提供一種薄膜覆晶封裝結構,其能提高凸塊與引腳的佈局彈性。The invention provides a thin film flip chip packaging structure, which can improve the layout flexibility of bumps and pins.
本發明的薄膜覆晶封裝結構包括可撓性薄膜、至少二導電件、絕緣體、至少二第一上引腳、至少二下引腳以及晶片。可撓性薄膜具有第一表面、相對於第一表面的第二表面以及貫通第一表面與第二表面的至少一貫孔。第一表面具有晶片設置區,且貫孔位在晶片設置區內。第二表面具有與晶片設置區相重疊的投影區。此二導電件設置於貫孔內。絕緣體設置於貫孔內,以分隔此二導電件,並使此二導電件電性分離。此二第一上引腳設置於晶片設置區內,且分別連接此二導電件。此二下引腳設置於第二表面,其中此二下引腳自投影區內向外延伸,且分別透過此二導電件電性連接此二第一上引腳。晶片設置於晶片設置區內,其中晶片包括至少二第一凸塊,且此二第一凸塊接合於此二第一上引腳。The chip-on-film package structure of the present invention includes a flexible film, at least two conductive elements, an insulator, at least two first upper leads, at least two lower leads, and a chip. The flexible film has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the first surface and the second surface. The first surface has a wafer setting area, and the through hole is located in the wafer setting area. The second surface has a projection area overlapping with the wafer setting area. The two conductive parts are arranged in the through hole. The insulator is arranged in the through hole to separate the two conductive parts and electrically separate the two conductive parts. The two first upper pins are arranged in the chip setting area and are respectively connected to the two conductive elements. The two lower pins are arranged on the second surface, wherein the two lower pins extend outward from the projection area, and are respectively electrically connected to the two first upper pins through the two conductive members. The chip is arranged in the chip arrangement area, wherein the chip includes at least two first bumps, and the two first bumps are connected to the two first upper pins.
基於上述,本發明的薄膜覆晶封裝結構採一對多的配置方式,透過一個導電貫孔電性連接位於可撓性薄膜的第一表面上的至少二第一上引腳與位於可撓性薄膜的第二表面上的至少二下引腳。進一步來說,本發明的導電貫孔係由電性分離的至少二導電件所組成,故能以一個孔位達成至少二組第一上引腳與下引腳的電性連接,並使此二組第一上引腳與下引腳電性分離。因此,本發明的薄膜覆晶封裝結構不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳與下引腳。Based on the above, the film-on-chip package structure of the present invention adopts a one-to-many configuration, and electrically connects at least two first upper pins on the first surface of the flexible film through a conductive through hole to the flexible film. At least two lower leads on the second surface of the film. Furthermore, the conductive through hole of the present invention is composed of at least two conductive members that are electrically separated, so that at least two sets of first upper pins and lower pins can be electrically connected with one hole position, and make this The first upper pin and the lower pin of the two groups are electrically separated. Therefore, the film-on-chip package structure of the present invention can not only improve the layout flexibility of bumps and pins, but also meet the design requirements of high pin count, high bump count, and fine pitch, so that the transmission is less in a limited area. A number of conductive through holes are electrically connected to a larger number of first upper pins and lower pins.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。圖1B是圖1A的薄膜覆晶封裝結構的底視示意圖。圖1C是圖1A的區域A的放大示意圖。圖1D是圖1B的區域B的放大示意圖。圖1E是圖1C沿剖線E-E’的剖面示意圖。圖1F是圖1A的區域F的放大示意圖。為求清楚表示晶片160與第一上引腳140之間的連接關係,圖1A的晶片160採用透視繪法呈現。FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is a schematic bottom view of the chip-on-film package structure of FIG. 1A. FIG. 1C is an enlarged schematic diagram of area A in FIG. 1A. FIG. 1D is an enlarged schematic diagram of area B in FIG. 1B. Fig. 1E is a schematic cross-sectional view of Fig. 1C along the section line E-E'. FIG. 1F is an enlarged schematic diagram of area F in FIG. 1A. In order to clearly show the connection relationship between the
請參考圖1A至圖1F,在本實施例中,薄膜覆晶封裝結構100包括可撓性薄膜110、至少二導電件120、絕緣體130、至少二第一上引腳140、至少二下引腳150以及晶片160。可撓性薄膜110具有彼此相對的第一表面110a與第二表面110b。進一步來說,可撓性薄膜110的第一表面110a設有晶片設置區R1,在可撓性薄膜110的第二表面110b上與晶片設置區R1相重疊的區域則為投影區R2。可撓性薄膜110的材質例如是聚醯亞胺(Polyimide, PI)、聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚醚(polyethersulfone, PES)、碳酸脂(polycarbonate, PC)或其他適合的可撓性材料。1A to 1F, in this embodiment, the film-on-
在本實施例中,至少二第一上引腳140(示意地繪示出多個)設置於第一表面110a的晶片設置區R1內,至少二下引腳150(示意地繪示出多個)設置於第二表面110b上,並自投影區R2內向外延伸。晶片160設置於晶片設置區R1內並與第一上引腳140電性連接。進一步來說,晶片160以其主動表面朝向第一表面110a,且透過主動表面上的至少二第一凸塊161(示意地繪示出多個)接合於至少二第一上引腳140。In this embodiment, at least two first upper pins 140 (schematically show a plurality of) are arranged in the wafer setting area R1 of the
另一方面,可撓性薄膜110還包括貫通第一表面110a與第二表面110b的至少一導電貫孔(示意地繪示出多個),其中導電貫孔的結構設計係在位於晶片設置區R1內且貫通第一表面110a與第二表面110b的貫孔111內設置至少二導電件120與絕緣體130,且至少二導電件120係由絕緣體130分隔開來而電性分離且無結構上的實質接觸。至少二第一上引腳140分別連接導電件120,而至少二下引腳150分別透過導電件120電性連接對應的至少二第一上引腳140。進一步來說,至少二第一上引腳140的其一透過至少二導電件120的其一電性連接至少二下引腳150的其一,而至少二第一上引腳140的另一透過至少二導電件120的另一電性連接至少二下引腳150的另一。On the other hand, the
因導電貫孔係由電性分離的至少二導電件120所組成,故能以一個孔位達成至少二組第一上引腳140與下引腳150的電性連接,並使此至少二組第一上引腳140與下引腳150電性分離。因此,薄膜覆晶封裝結構100不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳140與下引腳150。Since the conductive through hole is composed of at least two
在一實施例中,絕緣體130可以將貫孔111劃分為彼此分離的孔部O1、O2,此至少二導電件120的其一設置於孔部O1內,而此至少二導電件120的另一設置於孔部O2內。另一方面,每一絕緣體130的相對兩壁面131分別面向並緊貼貫孔111的內壁面,以確實將此至少二導電件120分隔開來。In an embodiment, the
在一實施例中,每一個第一上引腳140還可以包括上接墊141、延伸部142以及第一內接端143,且至少二第一上引腳140可以採對稱配置,但本發明不限於此。在每一個第一上引腳140中,延伸部142位於第一內接端143與上接墊141之間,且連接第一內接端143與上接墊141。第一凸塊161接合於對應的第一上引腳140的第一內接端143。In an embodiment, each first
在相對應的至少二第一上引腳140與至少二下引腳150中,每一個第一上引腳140透過對應的上接墊141連接對應的導電件120。另一方面,至少二第一上引腳140對稱設置於貫孔111的相對兩側,且至少二下引腳150對稱設置於貫孔111的相對兩側。進一步來說,每一個下引腳150包括下接墊151、下引腳延伸部152以及下引腳本體部153,在每一個下引腳150中,下引腳延伸部152位於下引腳本體部153與下接墊151之間,且連接下引腳本體部153與下接墊151。每一個下引腳150透過對應的下接墊151連接對應的導電件120。Among the corresponding at least two first
在連接同一個導電件120的一個第一上引腳140與一個下引腳150中,就正投影位置來看,下引腳本體部153局部對位重疊於第一內接端143,下引腳延伸部152對位重疊於對應的延伸部142,且下接墊151對位重疊於上接墊141。此佈設方式可簡化可撓性薄膜110上的線路規劃,並提高製作線路的效率。也可使可撓性薄膜110上下應力分佈較為平均,減少可撓性薄膜110因應力不均產生局部下陷或彎曲,進而導致引腳斷裂的問題。位於第二表面110b的下引腳150還可在晶片160與位於第一表面110a上的第一上引腳140熱壓接合時提供支撐,使凸塊與引腳受力均勻地接合,以達到良好電性接合品質。In a first
在一實施例中,薄膜覆晶封裝結構100還可以包括多個第二上引腳170,其中所述多個第二上引腳170自晶片設置區R1內向外延伸,且所述多個第二上引腳170的佈局方式與所述至少二第一上引腳140的佈局方式有所不同。另一方面,晶片160還可以包括多個第二凸塊162電性連接多個第二上引腳170。進一步來說,晶片160透過主動表面上的多個第二凸塊162接合於所述多個第二上引腳170位於晶片設置區R1內的第二內接端171。In an embodiment, the chip-on-
在本實施例中,每一下引腳150的延伸方向可以是與每一個第二上引腳170的延伸方向相同。此外,就正投影位置來看,任二相鄰的下引腳150之間設有一個第二上引腳170,或稱任二相鄰的第二上引腳170之間設有一個下引腳150,惟本發明不以此為限。在其他實施例中,就正投影位置來看,每一下引腳150的下引腳本體部153除了局部對位重疊於對應的第一內接端143之外,其餘部分可與一第二上引腳170對位重疊而共同向外延伸。藉由這樣對位重疊的配置,可使可撓性薄膜110上下應力分佈較為平均,減少可撓性薄膜110因應力不均產生局部下陷或彎曲,進而導致引腳斷裂的問題。位於第二表面110b的下引腳150還可在晶片160與位於第一表面110a上的第一上引腳140與第二上引腳170熱壓接合時提供支撐,使凸塊與引腳受力均勻地接合,以達到良好電性接合品質。In this embodiment, the extension direction of each
在本實施例中,晶片設置區R1具有相對的第一邊緣E1與第二邊緣E2,且晶片160具有相對的第一側邊160a與第二側邊160b。第一側邊160a鄰近第一邊緣E1,且第二側邊160b鄰近第二邊緣E2。就所述至少二第一凸塊161與所述多個第二凸塊162相對位置而言,所述多個第二凸塊162較所述至少二第一凸塊161靠近第一側邊160a。進一步來說,所述至少二第一凸塊161可以是排列於平行於第一側邊160a的第一直線段上,所述多個第二凸塊162可以是排列於平行於第一側邊160a的第二直線段上,其中第二直線段鄰近第一側邊160a,且第一直線段較第二直線段遠離第一側邊160a。In this embodiment, the wafer setting region R1 has a first edge E1 and a second edge E2 opposite to each other, and the
需說明的是,所述至少二第一凸塊161不限於排列於第一直線段上,所述多個第二凸塊162亦不限於排列於第二直線段上,舉例來說,所述至少二第一凸塊161與所述多個第二凸塊162可以是排列於兩不同的曲線段、弧線段或不規則線段上,舉凡滿足所述多個第二凸塊162較所述多對第一凸塊161靠近第一側邊160a的排列方式皆不脫離本發明的範疇。It should be noted that the at least two
本實施例的薄膜覆晶封裝結構100中的線路薄膜製造過程可例如下述步驟。首先,提供可撓性薄膜110。接著,對可撓性薄膜110進行鑽孔程序(例如雷射鑽孔),以形成貫孔111。然後,將絕緣體130形成於貫孔111內,以將貫孔111分隔為二孔部O1、O2,且此二孔部O1、O2未有連通。舉例來說,絕緣體130可以是介電材料、絕緣膠材或光阻材料,且連接貫孔111的內壁面,也就是說,絕緣體130並非可撓性薄膜110的一部分。接著,藉由電鍍、無電鍍、化學氣相沉積、物理氣相沉積或其他適用的製程於可撓性薄膜110的第一表面110a與第二表面110b上分別形成金屬層,且同時填充此二孔部O1、O2形成電性分離的二導電件120。之後,藉由微影蝕刻技術移除第一表面110a上與第二表面110b上的部分金屬層,以製作得到如圖1A至圖1F所示圖案化線路。換言之,貫孔111中的此二導電件120與圖案化線路中的上接墊141與下接墊151可為一體成型的結構。The manufacturing process of the circuit film in the chip-on-
另一方面,絕緣體130具有鄰近第一表面110a的第一端面130a與鄰近第二表面110b的第二端面130b,其中第一端面130a可以是超出第一表面110a並與上接墊141背向第一表面110a的外表面齊平或共平面,且第二端面130b可以是超出第二表面110b並與下接墊151背向第二表面110b的外表面齊平或共平面。On the other hand, the
圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。請參考圖2,本實施例的薄膜覆晶封裝結構100a類似於上述實施例的薄膜覆晶封裝結構100,而其差別在於:本實施例的絕緣體130的第一端面130a與可撓性薄膜110的第一表面110a共平面,且第二端面130b與可撓性薄膜110的第二表面110b共平面。換句話說,絕緣體130的第一端面130a相對於上接墊141呈內凹,且第二端面130b相對於下接墊151呈內凹。2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention. Please refer to FIG. 2, the chip-on-
圖3A是本發明又一實施例的薄膜覆晶封裝結構的俯視示意圖。圖3B是本發明又一實施例的薄膜覆晶封裝結構的底視示意圖。圖3C是圖3A的區域C的放大示意圖。圖3D是圖3B的區域D的放大示意圖。3A is a schematic top view of a chip-on-film package structure according to another embodiment of the invention. 3B is a schematic bottom view of a chip on film package structure according to another embodiment of the invention. FIG. 3C is an enlarged schematic diagram of area C in FIG. 3A. FIG. 3D is an enlarged schematic diagram of area D in FIG. 3B.
請參考圖3A至圖3D,本實施例的薄膜覆晶封裝結構100b類似於上述實施例的薄膜覆晶封裝結構100,而其差別在於:本實施例的絕緣體130可以將貫孔111劃分為彼此分離的孔部O11、孔部O12、孔部O13與孔部O14,並分別於孔部O11、孔部O12、孔部O13與孔部O14中形成導電件120。進一步而言,因導電貫孔係由電性分離的四導電件120所組成,故能以一個孔位達成至少四組第一上引腳140與下引腳150的電性連接,並使此四組第一上引腳140與下引腳150電性分離。因此,薄膜覆晶封裝結構100b不僅能提高凸塊與引腳的佈局彈性,亦能更進一步滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳140與第二下引腳150。3A to 3D, the thin film on
特別說明的是,第一凸塊161並不特別限制配置在第一側邊160a與導電件120之間,舉例而言,第一凸塊161也可以配置於第二側邊160b與導電件120之間,相應地,部分的第一上引腳140的走向須朝向第二側邊160b延伸以與位於第二側邊160b與導電件120之間的第一凸塊161接合,進而增加線路布局的彈性。Specifically, the
綜上所述,本發明的薄膜覆晶封裝結構採一對多的配置方式,透過一個導電貫孔電性連接位於可撓性薄膜的第一表面上的至少二第一上引腳與位於可撓性薄膜的第二表面上的至少二下引腳。進一步來說,本發明的導電貫孔係由電性分離的至少二導電件所組成,故能以一個孔位達成至少二組第一上引腳與下引腳的電性連接,並使此二組第一上引腳與下引腳電性分離。因此,本發明的薄膜覆晶封裝結構不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳與下引腳。In summary, the film-on-chip package structure of the present invention adopts a one-to-many configuration, and electrically connects at least two first upper pins on the first surface of the flexible film through a conductive through hole with At least two lower leads on the second surface of the flexible film. Furthermore, the conductive through hole of the present invention is composed of at least two conductive members that are electrically separated, so that at least two sets of first upper pins and lower pins can be electrically connected with one hole position, and make this The first upper pin and the lower pin of the two groups are electrically separated. Therefore, the film-on-chip package structure of the present invention can not only improve the layout flexibility of bumps and pins, but also meet the design requirements of high pin count, high bump count, and fine pitch, so that the transmission is less in a limited area. A number of conductive through holes are electrically connected to a larger number of first upper pins and lower pins.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
100、100a、100b:薄膜覆晶封裝結構100, 100a, 100b: Thin film flip chip package structure
110:可撓性薄膜110: Flexible film
110a:第一表面110a: first surface
110b:第二表面110b: second surface
111:貫孔111: Through hole
120:導電件120: conductive parts
130:絕緣體130: Insulator
130a:第一端面130a: first end face
130b:第二端面130b: second end face
131:壁面131: Wall
140:第一上引腳140: The first upper pin
141:上接墊141: upper pad
142:延伸部142: Extension
143:第一內接端143: first inner connection end
150:下引腳150: lower pin
151:下接墊151: Lower pad
152:下引腳延伸部152: Lower pin extension
153:下引腳本體部153: Lower pin body
160:晶片160: chip
160a:第一側邊160a: first side
160b:第二側邊160b: second side
161:第一凸塊161: The first bump
162:第二凸塊162: second bump
170:第二上引腳170: second upper pin
171:第二內接端171: second inner connection end
E1:第一邊緣E1: First edge
E2:第二邊緣E2: second edge
A、B、F:區域A, B, F: area
O1、O2、O11、O12、O13、O14:孔部O1, O2, O11, O12, O13, O14: Hole
R1:晶片設置區R1: Chip setting area
R2:投影區R2: projection area
圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。 圖1B是圖1A的薄膜覆晶封裝結構的底視示意圖。 圖1C是圖1A的區域A的放大示意圖。 圖1D是圖1B的區域B的放大示意圖。 圖1E是圖1C沿剖線E-E’的剖面示意圖。 圖1F是圖1A的區域F的放大示意圖。 圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。 圖3A是本發明又一實施例的薄膜覆晶封裝結構的俯視示意圖。 圖3B是本發明又一實施例的薄膜覆晶封裝結構的底視示意圖。 圖3C是圖3A的區域C的放大示意圖。 圖3D是圖3B的區域D的放大示意圖。 FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is a schematic bottom view of the chip-on-film package structure of FIG. 1A. FIG. 1C is an enlarged schematic diagram of area A in FIG. 1A. FIG. 1D is an enlarged schematic diagram of area B in FIG. 1B. Fig. 1E is a schematic cross-sectional view of Fig. 1C along the section line E-E'. FIG. 1F is an enlarged schematic diagram of area F in FIG. 1A. 2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention. 3A is a schematic top view of a chip-on-film package structure according to another embodiment of the invention. 3B is a schematic bottom view of a chip on film package structure according to another embodiment of the present invention. FIG. 3C is an enlarged schematic diagram of area C in FIG. 3A. FIG. 3D is an enlarged schematic diagram of area D in FIG. 3B.
100:薄膜覆晶封裝結構 100: Thin film flip chip package structure
110:可撓性薄膜 110: Flexible film
110a:第一表面 110a: first surface
110b:第二表面 110b: second surface
111:貫孔 111: Through hole
120:導電件 120: conductive parts
130:絕緣體 130: Insulator
130a:第一端面 130a: first end face
130b:第二端面 130b: second end face
141:上接墊 141: upper pad
151:下接墊 151: Lower pad
Claims (10)
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TW108112507A TWI703686B (en) | 2019-04-10 | 2019-04-10 | Chip on film package structure |
CN201910507450.2A CN111816635A (en) | 2019-04-10 | 2019-06-12 | Thin film flip chip packaging structure |
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TW108112507A TWI703686B (en) | 2019-04-10 | 2019-04-10 | Chip on film package structure |
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TW200511534A (en) * | 2003-09-03 | 2005-03-16 | Samsung Electronics Co Ltd | Tape circuit substrate and semiconductor chip package using the same |
TWM268600U (en) * | 2004-12-10 | 2005-06-21 | Innolux Display Corp | Structure of chip on glass and liquid crystal display device using the structure |
KR20140121178A (en) * | 2013-04-05 | 2014-10-15 | 삼성전자주식회사 | Chip-on-film package and device assembly including the same |
US9280182B2 (en) * | 2013-03-04 | 2016-03-08 | Samsung Electronics Co., Ltd. | Chip on film package and display device including the same |
US20180331049A1 (en) * | 2017-05-15 | 2018-11-15 | Novatek Microelectronics Corp. | Chip on film package |
TW201913907A (en) * | 2017-09-11 | 2019-04-01 | 南茂科技股份有限公司 | Film flip chip package structure |
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US6137064A (en) * | 1999-06-11 | 2000-10-24 | Teradyne, Inc. | Split via surface mount connector and related techniques |
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TW200511534A (en) * | 2003-09-03 | 2005-03-16 | Samsung Electronics Co Ltd | Tape circuit substrate and semiconductor chip package using the same |
TWM268600U (en) * | 2004-12-10 | 2005-06-21 | Innolux Display Corp | Structure of chip on glass and liquid crystal display device using the structure |
US9280182B2 (en) * | 2013-03-04 | 2016-03-08 | Samsung Electronics Co., Ltd. | Chip on film package and display device including the same |
KR20140121178A (en) * | 2013-04-05 | 2014-10-15 | 삼성전자주식회사 | Chip-on-film package and device assembly including the same |
US20180331049A1 (en) * | 2017-05-15 | 2018-11-15 | Novatek Microelectronics Corp. | Chip on film package |
TW201913907A (en) * | 2017-09-11 | 2019-04-01 | 南茂科技股份有限公司 | Film flip chip package structure |
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