TWI703686B - Chip on film package structure - Google Patents

Chip on film package structure Download PDF

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Publication number
TWI703686B
TWI703686B TW108112507A TW108112507A TWI703686B TW I703686 B TWI703686 B TW I703686B TW 108112507 A TW108112507 A TW 108112507A TW 108112507 A TW108112507 A TW 108112507A TW I703686 B TWI703686 B TW I703686B
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chip
pins
package structure
hole
bumps
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TW108112507A
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Chinese (zh)
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TW202038390A (en
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林士熙
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南茂科技股份有限公司
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Priority to TW108112507A priority Critical patent/TWI703686B/en
Priority to CN201910507450.2A priority patent/CN111816635A/en
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Publication of TWI703686B publication Critical patent/TWI703686B/en
Publication of TW202038390A publication Critical patent/TW202038390A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985Flexible insulating substrates

Abstract

A chip on film package structure includes a flexible film, at least two conductive parts, an insulator, at least two first upper leads, at least two lower leads and a chip. The flexible film has a first surface and a second surface opposite to each other, and at least one through hole located in a chip mounting area of the first surface. The second surface has a projection area which overlaps the chip mounting area. The conductive parts and the insulator are disposed in the through hole, and the conductive parts are separated from each other by the insulator to be electrically isolated. The first upper leads are disposed in the chip mounting area and are respectively connected the conductive parts. The lower leads extend outward from the projection area and are electrically connected to the first upper leads through the conductive parts respectively. The chip is disposed in the chip mounting area and includes at least two first bumps. The first bumps are bonded to the first upper leads.

Description

薄膜覆晶封裝結構Thin film flip chip package structure

本發明是有關於一種封裝結構,且特別是有關於一種薄膜覆晶封裝結構。The present invention relates to a packaging structure, and more particularly to a thin-film-on-chip packaging structure.

薄膜覆晶(Chip on Film, COF)封裝結構為常見的液晶顯示器的驅動晶片的封裝型態。隨著晶片上的凸塊數的增加、引腳數的增加與引腳間距的微縮,凸塊與引腳的佈局方式日益受限。若凸塊與引腳的佈局方式不當,則在覆晶接合的程序中容易產生橋接現象。The chip on film (COF) package structure is a common package type of the driver chip of the liquid crystal display. With the increase in the number of bumps on the wafer, the increase in the number of pins, and the shrinking of the pin pitch, the layout of bumps and pins is increasingly restricted. If the layout of bumps and pins is improper, bridging is likely to occur in the flip chip bonding process.

目前已有雙面線路薄膜的技術被提出,其採用一對一的配置方式透過相應數量的導電貫孔電性連接位於薄膜的上表面的上引腳與位於薄膜的下表面的下引腳,據以提高凸塊與引腳的佈局彈性。上述一對一的配置方式所需設置的導電貫孔的數量較多,需佔用薄膜的面積較大,對於引腳佈局仍形成某種程度的限制,故高引腳數、高凸塊數以及細間距的需求仍有待更進一步的改良設計方能滿足。At present, the technology of double-sided circuit film has been proposed, which uses a one-to-one configuration to electrically connect the upper pins on the upper surface of the film and the lower pins on the lower surface of the film through a corresponding number of conductive through holes. Accordingly, the layout flexibility of bumps and pins can be improved. The above-mentioned one-to-one configuration requires a large number of conductive through holes, which requires a large area of the film, and still poses a certain degree of restriction on the pin layout, so high pin count, high bump count and The need for fine pitch still needs to be further improved and designed.

本發明提供一種薄膜覆晶封裝結構,其能提高凸塊與引腳的佈局彈性。The invention provides a thin film flip chip packaging structure, which can improve the layout flexibility of bumps and pins.

本發明的薄膜覆晶封裝結構包括可撓性薄膜、至少二導電件、絕緣體、至少二第一上引腳、至少二下引腳以及晶片。可撓性薄膜具有第一表面、相對於第一表面的第二表面以及貫通第一表面與第二表面的至少一貫孔。第一表面具有晶片設置區,且貫孔位在晶片設置區內。第二表面具有與晶片設置區相重疊的投影區。此二導電件設置於貫孔內。絕緣體設置於貫孔內,以分隔此二導電件,並使此二導電件電性分離。此二第一上引腳設置於晶片設置區內,且分別連接此二導電件。此二下引腳設置於第二表面,其中此二下引腳自投影區內向外延伸,且分別透過此二導電件電性連接此二第一上引腳。晶片設置於晶片設置區內,其中晶片包括至少二第一凸塊,且此二第一凸塊接合於此二第一上引腳。The chip-on-film package structure of the present invention includes a flexible film, at least two conductive elements, an insulator, at least two first upper leads, at least two lower leads, and a chip. The flexible film has a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the first surface and the second surface. The first surface has a wafer setting area, and the through hole is located in the wafer setting area. The second surface has a projection area overlapping with the wafer setting area. The two conductive parts are arranged in the through hole. The insulator is arranged in the through hole to separate the two conductive parts and electrically separate the two conductive parts. The two first upper pins are arranged in the chip setting area and are respectively connected to the two conductive elements. The two lower pins are arranged on the second surface, wherein the two lower pins extend outward from the projection area, and are respectively electrically connected to the two first upper pins through the two conductive members. The chip is arranged in the chip arrangement area, wherein the chip includes at least two first bumps, and the two first bumps are connected to the two first upper pins.

基於上述,本發明的薄膜覆晶封裝結構採一對多的配置方式,透過一個導電貫孔電性連接位於可撓性薄膜的第一表面上的至少二第一上引腳與位於可撓性薄膜的第二表面上的至少二下引腳。進一步來說,本發明的導電貫孔係由電性分離的至少二導電件所組成,故能以一個孔位達成至少二組第一上引腳與下引腳的電性連接,並使此二組第一上引腳與下引腳電性分離。因此,本發明的薄膜覆晶封裝結構不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳與下引腳。Based on the above, the film-on-chip package structure of the present invention adopts a one-to-many configuration, and electrically connects at least two first upper pins on the first surface of the flexible film through a conductive through hole to the flexible film. At least two lower leads on the second surface of the film. Furthermore, the conductive through hole of the present invention is composed of at least two conductive members that are electrically separated, so that at least two sets of first upper pins and lower pins can be electrically connected with one hole position, and make this The first upper pin and the lower pin of the two groups are electrically separated. Therefore, the film-on-chip package structure of the present invention can not only improve the layout flexibility of bumps and pins, but also meet the design requirements of high pin count, high bump count, and fine pitch, so that the transmission is less in a limited area. A number of conductive through holes are electrically connected to a larger number of first upper pins and lower pins.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。圖1B是圖1A的薄膜覆晶封裝結構的底視示意圖。圖1C是圖1A的區域A的放大示意圖。圖1D是圖1B的區域B的放大示意圖。圖1E是圖1C沿剖線E-E’的剖面示意圖。圖1F是圖1A的區域F的放大示意圖。為求清楚表示晶片160與第一上引腳140之間的連接關係,圖1A的晶片160採用透視繪法呈現。FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is a schematic bottom view of the chip-on-film package structure of FIG. 1A. FIG. 1C is an enlarged schematic diagram of area A in FIG. 1A. FIG. 1D is an enlarged schematic diagram of area B in FIG. 1B. Fig. 1E is a schematic cross-sectional view of Fig. 1C along the section line E-E'. FIG. 1F is an enlarged schematic diagram of area F in FIG. 1A. In order to clearly show the connection relationship between the chip 160 and the first upper pin 140, the chip 160 in FIG. 1A is presented in perspective drawing.

請參考圖1A至圖1F,在本實施例中,薄膜覆晶封裝結構100包括可撓性薄膜110、至少二導電件120、絕緣體130、至少二第一上引腳140、至少二下引腳150以及晶片160。可撓性薄膜110具有彼此相對的第一表面110a與第二表面110b。進一步來說,可撓性薄膜110的第一表面110a設有晶片設置區R1,在可撓性薄膜110的第二表面110b上與晶片設置區R1相重疊的區域則為投影區R2。可撓性薄膜110的材質例如是聚醯亞胺(Polyimide, PI)、聚乙烯對苯二甲酸酯(polyethylene terephthalate, PET)、聚醚(polyethersulfone, PES)、碳酸脂(polycarbonate, PC)或其他適合的可撓性材料。1A to 1F, in this embodiment, the film-on-chip package structure 100 includes a flexible film 110, at least two conductive elements 120, an insulator 130, at least two first upper leads 140, and at least two lower leads 150 and wafer 160. The flexible film 110 has a first surface 110a and a second surface 110b opposite to each other. Furthermore, the first surface 110a of the flexible film 110 is provided with a wafer setting area R1, and the area overlapping the wafer setting area R1 on the second surface 110b of the flexible film 110 is the projection area R2. The flexible film 110 is made of, for example, polyimide (PI), polyethylene terephthalate (PET), polyethersulfone (PES), polycarbonate (PC) or Other suitable flexible materials.

在本實施例中,至少二第一上引腳140(示意地繪示出多個)設置於第一表面110a的晶片設置區R1內,至少二下引腳150(示意地繪示出多個)設置於第二表面110b上,並自投影區R2內向外延伸。晶片160設置於晶片設置區R1內並與第一上引腳140電性連接。進一步來說,晶片160以其主動表面朝向第一表面110a,且透過主動表面上的至少二第一凸塊161(示意地繪示出多個)接合於至少二第一上引腳140。In this embodiment, at least two first upper pins 140 (schematically show a plurality of) are arranged in the wafer setting area R1 of the first surface 110a, and at least two lower pins 150 (schematically show a plurality of ) Is disposed on the second surface 110b and extends from the projection area R2 to the outside. The chip 160 is disposed in the chip setting area R1 and is electrically connected to the first upper pin 140. Furthermore, the chip 160 faces the first surface 110a with its active surface, and is bonded to the at least two first upper pins 140 through at least two first bumps 161 (schematically show multiple) on the active surface.

另一方面,可撓性薄膜110還包括貫通第一表面110a與第二表面110b的至少一導電貫孔(示意地繪示出多個),其中導電貫孔的結構設計係在位於晶片設置區R1內且貫通第一表面110a與第二表面110b的貫孔111內設置至少二導電件120與絕緣體130,且至少二導電件120係由絕緣體130分隔開來而電性分離且無結構上的實質接觸。至少二第一上引腳140分別連接導電件120,而至少二下引腳150分別透過導電件120電性連接對應的至少二第一上引腳140。進一步來說,至少二第一上引腳140的其一透過至少二導電件120的其一電性連接至少二下引腳150的其一,而至少二第一上引腳140的另一透過至少二導電件120的另一電性連接至少二下引腳150的另一。On the other hand, the flexible film 110 also includes at least one conductive through hole (schematically shows a plurality) penetrating through the first surface 110a and the second surface 110b, wherein the conductive through hole is designed in the chip placement area. At least two conductive elements 120 and an insulator 130 are provided in the through holes 111 in R1 that penetrates the first surface 110a and the second surface 110b, and the at least two conductive elements 120 are separated by the insulator 130 and are electrically separated and have no structure. Of physical contact. The at least two first upper pins 140 are respectively connected to the conductive element 120, and the at least two lower pins 150 are respectively electrically connected to the corresponding at least two first upper pins 140 through the conductive element 120. Further, one of the at least two first upper pins 140 is electrically connected to one of the at least two lower pins 150 through one of the at least two conductive members 120, and the other of the at least two first upper pins 140 penetrates The other of the at least two conductive members 120 is electrically connected to the other of the at least two lower pins 150.

因導電貫孔係由電性分離的至少二導電件120所組成,故能以一個孔位達成至少二組第一上引腳140與下引腳150的電性連接,並使此至少二組第一上引腳140與下引腳150電性分離。因此,薄膜覆晶封裝結構100不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳140與下引腳150。Since the conductive through hole is composed of at least two conductive members 120 that are electrically separated, at least two sets of the first upper pin 140 and the lower pin 150 can be electrically connected with one hole, and the at least two sets The first upper pin 140 and the lower pin 150 are electrically separated. Therefore, the film-on-chip package structure 100 can not only improve the layout flexibility of bumps and pins, but also meet the design requirements of high pin count, high bump count, and fine pitch, so that a smaller number of The conductive through holes electrically connect more groups of the first upper pins 140 and the lower pins 150.

在一實施例中,絕緣體130可以將貫孔111劃分為彼此分離的孔部O1、O2,此至少二導電件120的其一設置於孔部O1內,而此至少二導電件120的另一設置於孔部O2內。另一方面,每一絕緣體130的相對兩壁面131分別面向並緊貼貫孔111的內壁面,以確實將此至少二導電件120分隔開來。In an embodiment, the insulator 130 may divide the through hole 111 into holes O1, O2 separated from each other, one of the at least two conductive members 120 is disposed in the hole O1, and the other of the at least two conductive members 120 Set in the hole O2. On the other hand, the two opposite wall surfaces 131 of each insulator 130 respectively face and abut the inner wall surface of the through hole 111 to separate the at least two conductive members 120 reliably.

在一實施例中,每一個第一上引腳140還可以包括上接墊141、延伸部142以及第一內接端143,且至少二第一上引腳140可以採對稱配置,但本發明不限於此。在每一個第一上引腳140中,延伸部142位於第一內接端143與上接墊141之間,且連接第一內接端143與上接墊141。第一凸塊161接合於對應的第一上引腳140的第一內接端143。In an embodiment, each first upper pin 140 may further include an upper pad 141, an extension portion 142, and a first inner connecting end 143, and at least two first upper pins 140 may have a symmetrical configuration, but the present invention Not limited to this. In each of the first upper pins 140, the extension portion 142 is located between the first inner connecting end 143 and the upper pad 141 and connects the first inner connecting end 143 and the upper pad 141. The first bump 161 is engaged with the first inner connecting end 143 of the corresponding first upper pin 140.

在相對應的至少二第一上引腳140與至少二下引腳150中,每一個第一上引腳140透過對應的上接墊141連接對應的導電件120。另一方面,至少二第一上引腳140對稱設置於貫孔111的相對兩側,且至少二下引腳150對稱設置於貫孔111的相對兩側。進一步來說,每一個下引腳150包括下接墊151、下引腳延伸部152以及下引腳本體部153,在每一個下引腳150中,下引腳延伸部152位於下引腳本體部153與下接墊151之間,且連接下引腳本體部153與下接墊151。每一個下引腳150透過對應的下接墊151連接對應的導電件120。Among the corresponding at least two first upper pins 140 and at least two lower pins 150, each of the first upper pins 140 is connected to the corresponding conductive member 120 through the corresponding upper pad 141. On the other hand, at least two first upper pins 140 are symmetrically disposed on opposite sides of the through hole 111, and at least two lower pins 150 are symmetrically disposed on opposite sides of the through hole 111. Furthermore, each lower pin 150 includes a lower pad 151, a lower pin extension 152, and a lower pin body portion 153. In each of the lower pins 150, the lower pin extension 152 is located on the lower pin body. The portion 153 and the lower pad 151 are connected to the lower pin body portion 153 and the lower pad 151. Each lower pin 150 is connected to the corresponding conductive element 120 through the corresponding lower pad 151.

在連接同一個導電件120的一個第一上引腳140與一個下引腳150中,就正投影位置來看,下引腳本體部153局部對位重疊於第一內接端143,下引腳延伸部152對位重疊於對應的延伸部142,且下接墊151對位重疊於上接墊141。此佈設方式可簡化可撓性薄膜110上的線路規劃,並提高製作線路的效率。也可使可撓性薄膜110上下應力分佈較為平均,減少可撓性薄膜110因應力不均產生局部下陷或彎曲,進而導致引腳斷裂的問題。位於第二表面110b的下引腳150還可在晶片160與位於第一表面110a上的第一上引腳140熱壓接合時提供支撐,使凸塊與引腳受力均勻地接合,以達到良好電性接合品質。In a first upper pin 140 and a lower pin 150 connected to the same conductive member 120, from the perspective of the orthographic projection position, the lower pin body 153 is partially aligned and overlaps the first inner connecting end 143, and the lower lead The leg extension portion 152 is aligned and overlapped with the corresponding extension portion 142, and the lower pad 151 is aligned and overlapped with the upper pad 141. This layout method can simplify the circuit planning on the flexible film 110 and improve the efficiency of manufacturing the circuit. It can also make the upper and lower stress distribution of the flexible film 110 more even, and reduce the problem of local sag or bending of the flexible film 110 due to uneven stress, which may lead to pin fracture. The lower pin 150 located on the second surface 110b can also provide support when the chip 160 is thermally and compressed with the first upper pin 140 located on the first surface 110a, so that the bumps and the pins are evenly joined by force to achieve Good electrical bonding quality.

在一實施例中,薄膜覆晶封裝結構100還可以包括多個第二上引腳170,其中所述多個第二上引腳170自晶片設置區R1內向外延伸,且所述多個第二上引腳170的佈局方式與所述至少二第一上引腳140的佈局方式有所不同。另一方面,晶片160還可以包括多個第二凸塊162電性連接多個第二上引腳170。進一步來說,晶片160透過主動表面上的多個第二凸塊162接合於所述多個第二上引腳170位於晶片設置區R1內的第二內接端171。In an embodiment, the chip-on-film package structure 100 may further include a plurality of second upper pins 170, wherein the plurality of second upper pins 170 extend outward from the chip placement area R1, and the plurality of second upper pins 170 The layout of the second upper pins 170 is different from the layout of the at least two first upper pins 140. On the other hand, the chip 160 may further include a plurality of second bumps 162 electrically connected to a plurality of second upper pins 170. Furthermore, the chip 160 is bonded to the second inner terminals 171 of the plurality of second upper pins 170 located in the chip setting region R1 through the plurality of second bumps 162 on the active surface.

在本實施例中,每一下引腳150的延伸方向可以是與每一個第二上引腳170的延伸方向相同。此外,就正投影位置來看,任二相鄰的下引腳150之間設有一個第二上引腳170,或稱任二相鄰的第二上引腳170之間設有一個下引腳150,惟本發明不以此為限。在其他實施例中,就正投影位置來看,每一下引腳150的下引腳本體部153除了局部對位重疊於對應的第一內接端143之外,其餘部分可與一第二上引腳170對位重疊而共同向外延伸。藉由這樣對位重疊的配置,可使可撓性薄膜110上下應力分佈較為平均,減少可撓性薄膜110因應力不均產生局部下陷或彎曲,進而導致引腳斷裂的問題。位於第二表面110b的下引腳150還可在晶片160與位於第一表面110a上的第一上引腳140與第二上引腳170熱壓接合時提供支撐,使凸塊與引腳受力均勻地接合,以達到良好電性接合品質。In this embodiment, the extension direction of each lower pin 150 may be the same as the extension direction of each second upper pin 170. In addition, from the perspective of the orthographic projection position, a second upper lead 170 is provided between any two adjacent lower leads 150, or a lower lead 170 is provided between any two adjacent second upper leads 170. Feet 150, but the present invention is not limited thereto. In other embodiments, from the perspective of the orthographic projection position, the lower pin body portion 153 of each lower pin 150 is partially aligned and overlapped with the corresponding first inner connecting end 143, and the rest can be connected to a second upper The pins 170 overlap and extend outward together. With such a aligning and overlapping configuration, the upper and lower stress distribution of the flexible film 110 can be made more even, and the problem of local sag or bending of the flexible film 110 due to uneven stresses can be reduced, which may lead to pin fracture. The lower pin 150 located on the second surface 110b can also provide support when the chip 160 is thermally and compressed with the first upper pin 140 and the second upper pin 170 located on the first surface 110a, so that the bumps and the pins can be The force is evenly bonded to achieve good electrical bonding quality.

在本實施例中,晶片設置區R1具有相對的第一邊緣E1與第二邊緣E2,且晶片160具有相對的第一側邊160a與第二側邊160b。第一側邊160a鄰近第一邊緣E1,且第二側邊160b鄰近第二邊緣E2。就所述至少二第一凸塊161與所述多個第二凸塊162相對位置而言,所述多個第二凸塊162較所述至少二第一凸塊161靠近第一側邊160a。進一步來說,所述至少二第一凸塊161可以是排列於平行於第一側邊160a的第一直線段上,所述多個第二凸塊162可以是排列於平行於第一側邊160a的第二直線段上,其中第二直線段鄰近第一側邊160a,且第一直線段較第二直線段遠離第一側邊160a。In this embodiment, the wafer setting region R1 has a first edge E1 and a second edge E2 opposite to each other, and the wafer 160 has a first side 160a and a second side 160b opposite to each other. The first side 160a is adjacent to the first edge E1, and the second side 160b is adjacent to the second edge E2. With regard to the relative positions of the at least two first protrusions 161 and the plurality of second protrusions 162, the plurality of second protrusions 162 are closer to the first side 160a than the at least two first protrusions 161 . Furthermore, the at least two first bumps 161 may be arranged on a first straight line parallel to the first side 160a, and the plurality of second bumps 162 may be arranged in parallel to the first side 160a. The second straight line segment is adjacent to the first side 160a, and the first straight line segment is farther from the first side 160a than the second straight line segment.

需說明的是,所述至少二第一凸塊161不限於排列於第一直線段上,所述多個第二凸塊162亦不限於排列於第二直線段上,舉例來說,所述至少二第一凸塊161與所述多個第二凸塊162可以是排列於兩不同的曲線段、弧線段或不規則線段上,舉凡滿足所述多個第二凸塊162較所述多對第一凸塊161靠近第一側邊160a的排列方式皆不脫離本發明的範疇。It should be noted that the at least two first bumps 161 are not limited to being arranged on the first straight section, and the plurality of second bumps 162 are not limited to being arranged on the second straight section. For example, the at least The two first bumps 161 and the plurality of second bumps 162 may be arranged on two different curved segments, arc segments or irregular line segments, for example, it is satisfied that the plurality of second bumps 162 are larger than the plurality of pairs. The arrangement of the first bump 161 close to the first side 160a does not depart from the scope of the present invention.

本實施例的薄膜覆晶封裝結構100中的線路薄膜製造過程可例如下述步驟。首先,提供可撓性薄膜110。接著,對可撓性薄膜110進行鑽孔程序(例如雷射鑽孔),以形成貫孔111。然後,將絕緣體130形成於貫孔111內,以將貫孔111分隔為二孔部O1、O2,且此二孔部O1、O2未有連通。舉例來說,絕緣體130可以是介電材料、絕緣膠材或光阻材料,且連接貫孔111的內壁面,也就是說,絕緣體130並非可撓性薄膜110的一部分。接著,藉由電鍍、無電鍍、化學氣相沉積、物理氣相沉積或其他適用的製程於可撓性薄膜110的第一表面110a與第二表面110b上分別形成金屬層,且同時填充此二孔部O1、O2形成電性分離的二導電件120。之後,藉由微影蝕刻技術移除第一表面110a上與第二表面110b上的部分金屬層,以製作得到如圖1A至圖1F所示圖案化線路。換言之,貫孔111中的此二導電件120與圖案化線路中的上接墊141與下接墊151可為一體成型的結構。The manufacturing process of the circuit film in the chip-on-film package structure 100 of this embodiment may be the following steps. First, a flexible film 110 is provided. Next, a drilling procedure (for example, laser drilling) is performed on the flexible film 110 to form the through hole 111. Then, the insulator 130 is formed in the through hole 111 to partition the through hole 111 into two hole portions O1 and O2, and the two hole portions O1 and O2 are not connected. For example, the insulator 130 may be a dielectric material, an insulating adhesive material or a photoresist material, and is connected to the inner wall surface of the through hole 111, that is, the insulator 130 is not a part of the flexible film 110. Then, metal layers are formed on the first surface 110a and the second surface 110b of the flexible film 110 by electroplating, electroless plating, chemical vapor deposition, physical vapor deposition or other suitable processes, and the two surfaces are filled at the same time. The holes O1 and O2 form two electrically separated conductive members 120. After that, a part of the metal layer on the first surface 110a and the second surface 110b is removed by the photolithography technique to produce the patterned circuit as shown in FIGS. 1A to 1F. In other words, the two conductive members 120 in the through hole 111 and the upper pad 141 and the lower pad 151 in the patterned circuit can be an integral structure.

另一方面,絕緣體130具有鄰近第一表面110a的第一端面130a與鄰近第二表面110b的第二端面130b,其中第一端面130a可以是超出第一表面110a並與上接墊141背向第一表面110a的外表面齊平或共平面,且第二端面130b可以是超出第二表面110b並與下接墊151背向第二表面110b的外表面齊平或共平面。On the other hand, the insulator 130 has a first end surface 130a adjacent to the first surface 110a and a second end surface 130b adjacent to the second surface 110b. The first end surface 130a may extend beyond the first surface 110a and face the upper pad 141 away from the The outer surface of one surface 110a is flush or coplanar, and the second end surface 130b may extend beyond the second surface 110b and be flush or coplanar with the outer surface of the lower pad 151 facing away from the second surface 110b.

圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。請參考圖2,本實施例的薄膜覆晶封裝結構100a類似於上述實施例的薄膜覆晶封裝結構100,而其差別在於:本實施例的絕緣體130的第一端面130a與可撓性薄膜110的第一表面110a共平面,且第二端面130b與可撓性薄膜110的第二表面110b共平面。換句話說,絕緣體130的第一端面130a相對於上接墊141呈內凹,且第二端面130b相對於下接墊151呈內凹。2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention. Please refer to FIG. 2, the chip-on-film package structure 100a of this embodiment is similar to the chip-on-film package structure 100 of the above embodiment, but the difference lies in: the first end surface 130a of the insulator 130 and the flexible film 110 of this embodiment The first surface 110a of the flexible film 110 is coplanar, and the second end surface 130b is coplanar with the second surface 110b of the flexible film 110. In other words, the first end surface 130a of the insulator 130 is concave relative to the upper pad 141, and the second end surface 130b is concave relative to the lower pad 151.

圖3A是本發明又一實施例的薄膜覆晶封裝結構的俯視示意圖。圖3B是本發明又一實施例的薄膜覆晶封裝結構的底視示意圖。圖3C是圖3A的區域C的放大示意圖。圖3D是圖3B的區域D的放大示意圖。3A is a schematic top view of a chip-on-film package structure according to another embodiment of the invention. 3B is a schematic bottom view of a chip on film package structure according to another embodiment of the invention. FIG. 3C is an enlarged schematic diagram of area C in FIG. 3A. FIG. 3D is an enlarged schematic diagram of area D in FIG. 3B.

請參考圖3A至圖3D,本實施例的薄膜覆晶封裝結構100b類似於上述實施例的薄膜覆晶封裝結構100,而其差別在於:本實施例的絕緣體130可以將貫孔111劃分為彼此分離的孔部O11、孔部O12、孔部O13與孔部O14,並分別於孔部O11、孔部O12、孔部O13與孔部O14中形成導電件120。進一步而言,因導電貫孔係由電性分離的四導電件120所組成,故能以一個孔位達成至少四組第一上引腳140與下引腳150的電性連接,並使此四組第一上引腳140與下引腳150電性分離。因此,薄膜覆晶封裝結構100b不僅能提高凸塊與引腳的佈局彈性,亦能更進一步滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳140與第二下引腳150。3A to 3D, the thin film on chip package structure 100b of this embodiment is similar to the thin film on chip package structure 100 of the above embodiment, but the difference is that the insulator 130 of this embodiment can divide the through holes 111 into each other The hole O11, the hole O12, the hole O13, and the hole O14 are separated, and the conductive member 120 is formed in the hole O11, the hole O12, the hole O13, and the hole O14, respectively. Furthermore, because the conductive through holes are composed of four conductive members 120 that are electrically separated, at least four groups of the first upper pins 140 and the lower pins 150 can be electrically connected with one hole position. The four groups of first upper pins 140 and lower pins 150 are electrically separated. Therefore, the film-on-chip package structure 100b can not only improve the layout flexibility of bumps and pins, but also further meet the design requirements of high pin count, high bump count, and fine pitch, so that less penetration in a limited area A larger number of conductive through holes electrically connect more groups of the first upper pins 140 and the second lower pins 150.

特別說明的是,第一凸塊161並不特別限制配置在第一側邊160a與導電件120之間,舉例而言,第一凸塊161也可以配置於第二側邊160b與導電件120之間,相應地,部分的第一上引腳140的走向須朝向第二側邊160b延伸以與位於第二側邊160b與導電件120之間的第一凸塊161接合,進而增加線路布局的彈性。Specifically, the first bump 161 is not particularly limited to be disposed between the first side 160a and the conductive member 120. For example, the first bump 161 may also be disposed between the second side 160b and the conductive member 120. Correspondingly, part of the first upper pin 140 must extend toward the second side 160b so as to engage with the first bump 161 between the second side 160b and the conductive element 120, thereby increasing the circuit layout的flexibility.

綜上所述,本發明的薄膜覆晶封裝結構採一對多的配置方式,透過一個導電貫孔電性連接位於可撓性薄膜的第一表面上的至少二第一上引腳與位於可撓性薄膜的第二表面上的至少二下引腳。進一步來說,本發明的導電貫孔係由電性分離的至少二導電件所組成,故能以一個孔位達成至少二組第一上引腳與下引腳的電性連接,並使此二組第一上引腳與下引腳電性分離。因此,本發明的薄膜覆晶封裝結構不僅能提高凸塊與引腳的佈局彈性,亦能滿足高引腳數、高凸塊數以及細間距的設計需求,據以在有限面積下透過較少數量的導電貫孔電性連接更多組數的第一上引腳與下引腳。In summary, the film-on-chip package structure of the present invention adopts a one-to-many configuration, and electrically connects at least two first upper pins on the first surface of the flexible film through a conductive through hole with At least two lower leads on the second surface of the flexible film. Furthermore, the conductive through hole of the present invention is composed of at least two conductive members that are electrically separated, so that at least two sets of first upper pins and lower pins can be electrically connected with one hole position, and make this The first upper pin and the lower pin of the two groups are electrically separated. Therefore, the film-on-chip package structure of the present invention can not only improve the layout flexibility of bumps and pins, but also meet the design requirements of high pin count, high bump count, and fine pitch, so that the transmission is less in a limited area. A number of conductive through holes are electrically connected to a larger number of first upper pins and lower pins.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the relevant technical field can make slight changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100、100a、100b:薄膜覆晶封裝結構100, 100a, 100b: Thin film flip chip package structure

110:可撓性薄膜110: Flexible film

110a:第一表面110a: first surface

110b:第二表面110b: second surface

111:貫孔111: Through hole

120:導電件120: conductive parts

130:絕緣體130: Insulator

130a:第一端面130a: first end face

130b:第二端面130b: second end face

131:壁面131: Wall

140:第一上引腳140: The first upper pin

141:上接墊141: upper pad

142:延伸部142: Extension

143:第一內接端143: first inner connection end

150:下引腳150: lower pin

151:下接墊151: Lower pad

152:下引腳延伸部152: Lower pin extension

153:下引腳本體部153: Lower pin body

160:晶片160: chip

160a:第一側邊160a: first side

160b:第二側邊160b: second side

161:第一凸塊161: The first bump

162:第二凸塊162: second bump

170:第二上引腳170: second upper pin

171:第二內接端171: second inner connection end

E1:第一邊緣E1: First edge

E2:第二邊緣E2: second edge

A、B、F:區域A, B, F: area

O1、O2、O11、O12、O13、O14:孔部O1, O2, O11, O12, O13, O14: Hole

R1:晶片設置區R1: Chip setting area

R2:投影區R2: projection area

圖1A是本發明一實施例的薄膜覆晶封裝結構的俯視示意圖。 圖1B是圖1A的薄膜覆晶封裝結構的底視示意圖。 圖1C是圖1A的區域A的放大示意圖。 圖1D是圖1B的區域B的放大示意圖。 圖1E是圖1C沿剖線E-E’的剖面示意圖。 圖1F是圖1A的區域F的放大示意圖。 圖2是本發明另一實施例的薄膜覆晶封裝結構的剖面示意圖。 圖3A是本發明又一實施例的薄膜覆晶封裝結構的俯視示意圖。 圖3B是本發明又一實施例的薄膜覆晶封裝結構的底視示意圖。 圖3C是圖3A的區域C的放大示意圖。 圖3D是圖3B的區域D的放大示意圖。 FIG. 1A is a schematic top view of a chip-on-film package structure according to an embodiment of the invention. FIG. 1B is a schematic bottom view of the chip-on-film package structure of FIG. 1A. FIG. 1C is an enlarged schematic diagram of area A in FIG. 1A. FIG. 1D is an enlarged schematic diagram of area B in FIG. 1B. Fig. 1E is a schematic cross-sectional view of Fig. 1C along the section line E-E'. FIG. 1F is an enlarged schematic diagram of area F in FIG. 1A. 2 is a schematic cross-sectional view of a chip-on-film package structure according to another embodiment of the invention. 3A is a schematic top view of a chip-on-film package structure according to another embodiment of the invention. 3B is a schematic bottom view of a chip on film package structure according to another embodiment of the present invention. FIG. 3C is an enlarged schematic diagram of area C in FIG. 3A. FIG. 3D is an enlarged schematic diagram of area D in FIG. 3B.

100:薄膜覆晶封裝結構 100: Thin film flip chip package structure

110:可撓性薄膜 110: Flexible film

110a:第一表面 110a: first surface

110b:第二表面 110b: second surface

111:貫孔 111: Through hole

120:導電件 120: conductive parts

130:絕緣體 130: Insulator

130a:第一端面 130a: first end face

130b:第二端面 130b: second end face

141:上接墊 141: upper pad

151:下接墊 151: Lower pad

Claims (10)

一種薄膜覆晶封裝結構,包括:可撓性薄膜,具有第一表面、相對於該第一表面的第二表面以及貫通該第一表面與該第二表面的至少一貫孔,其中該第一表面具有晶片設置區,且該貫孔位在該晶片設置區內,該第二表面具有與該晶片設置區相重疊的投影區;至少二導電件,設置於該貫孔內;絕緣體,設置於該貫孔內,以分隔該至少二導電件,並使該至少二導電件電性分離;至少二第一上引腳,設置於該晶片設置區內,且分別連接該至少二導電件;至少二下引腳,設置於該第二表面,其中該至少二下引腳自該投影區內向外延伸,且分別透過該至少二導電件電性連接該至少二第一上引腳,其中該至少二第一上引腳與該至少二下引腳對應該貫孔;以及晶片,設置於該晶片設置區內,其中該晶片包括至少二第一凸塊,且該至少二第一凸塊接合於該至少二第一上引腳。 A chip-on-film packaging structure includes: a flexible film having a first surface, a second surface opposite to the first surface, and at least one through hole penetrating the first surface and the second surface, wherein the first surface It has a wafer setting area, and the through hole is located in the wafer setting area, the second surface has a projection area overlapping with the wafer setting area; at least two conductive elements are arranged in the through hole; an insulator is arranged in the In the through hole, to separate the at least two conductive parts and electrically separate the at least two conductive parts; at least two first upper pins are arranged in the chip setting area and are connected to the at least two conductive parts respectively; The lower pins are disposed on the second surface, wherein the at least two lower pins extend outward from the projection area, and are electrically connected to the at least two first upper pins through the at least two conductive members, respectively, wherein the at least two The first upper pin and the at least two lower pins correspond to the through holes; and the chip is arranged in the chip setting area, wherein the chip includes at least two first bumps, and the at least two first bumps are bonded to the At least two first upper pins. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中該絕緣體將該貫孔劃分為彼此分離的至少二孔部,該至少二導電件分別設置於該至少二孔部內。 According to the first item of the scope of patent application, the chip-on-film package structure, wherein the insulator divides the through hole into at least two hole portions separated from each other, and the at least two conductive members are respectively disposed in the at least two hole portions. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,其中各該第一上引腳包括第一內接端、延伸部以及上接墊,各該延伸 部連接對應的該第一內接端與該上接墊,各該第一內接端接合於對應的該第一凸塊,且各該上接墊連接對應的該導電件。 As described in the first item of the scope of patent application, each of the first upper pins includes a first inner terminal, an extension portion, and an upper pad, and each of the extensions The parts are connected to the corresponding first inner connecting end and the upper pad, each of the first inner connecting ends is connected to the corresponding first bump, and each of the upper pads is connected to the corresponding conductive element. 如申請專利範圍第3項所述的薄膜覆晶封裝結構,其中各該上接墊與對應的該導電件為一體成型的結構。 In the chip-on-film package structure described in item 3 of the scope of the patent application, each of the upper pads and the corresponding conductive element are integrally formed. 如申請專利範圍第3項所述的薄膜覆晶封裝結構,其中各該下引腳包括下引腳本體部、下引腳延伸部以及下接墊,各該下引腳延伸部連接對應的該下引腳本體部與該下接墊,且各該下接墊連接對應的該導電件。 As described in item 3 of the scope of patent application, each of the lower leads includes a lower lead body, a lower lead extension, and a lower pad, and each lower lead extension is connected to the corresponding The lower pin body part is connected to the lower pad, and each of the lower pads is connected to the corresponding conductive element. 如申請專利範圍第5項所述的薄膜覆晶封裝結構,其中各該下引腳本體部局部對位重疊於對應的該第一內接端,各該下引腳延伸部對位重疊於對應的該延伸部,且各該下接墊對位重疊於對應的該上接墊。 As described in the fifth item of the scope of patent application, the thin film flip chip package structure, wherein each of the lower lead body part is locally aligned and overlapped with the corresponding first inner terminal, and each of the lower lead extension parts is aligned and overlapped with the corresponding The extension part of the, and each of the lower pads overlaps the corresponding upper pad. 如申請專利範圍第5項所述的薄膜覆晶封裝結構,其中各該下接墊與對應的該導電件為一體成型的結構。 According to the chip-on-film package structure described in item 5 of the scope of patent application, each of the bottom pads and the corresponding conductive element are integrally formed. 如申請專利範圍第5項所述的薄膜覆晶封裝結構,其中該絕緣體具有鄰近該第一表面的第一端面與鄰近該第二表面的第二端面,該第一端面與該第一表面或該上接墊共平面,且該第二端面與該第二表面或該下接墊共平面。 As claimed in claim 5, the chip-on-film package structure, wherein the insulator has a first end surface adjacent to the first surface and a second end surface adjacent to the second surface, the first end surface and the first surface or The upper pad is coplanar, and the second end surface is coplanar with the second surface or the lower pad. 如申請專利範圍第1項所述的薄膜覆晶封裝結構,更包括多個第二上引腳,自該晶片設置區內向外延伸,其中各該第二上引腳具有位於該晶片設置區內的第二內接端,該晶片更包括多個第二凸塊,且該些第二凸塊接合於該些第二內接端。 As described in the first item of the scope of patent application, the chip-on-film package structure further includes a plurality of second upper pins extending outward from the chip setting area, wherein each of the second upper pins is located in the chip setting area The chip further includes a plurality of second bumps, and the second bumps are joined to the second inbound ends. 如申請專利範圍第9項所述的薄膜覆晶封裝結構,其中該晶片設置區具有相對的第一邊緣與第二邊緣,且該晶片具有相對的第一側邊與第二側邊,該第一側邊鄰近該第一邊緣,且該第二側邊鄰近該第二邊緣,該些第二上引腳自該晶片設置區內經過該第一邊緣而向外延伸,其中該些第二凸塊鄰近該第一側邊,且該些第一凸塊較該些第二凸塊遠離該第一側邊。The chip-on-film package structure according to claim 9, wherein the chip arrangement area has opposite first and second edges, and the chip has opposite first and second sides, and the first One side is adjacent to the first edge, and the second side is adjacent to the second edge, the second upper leads extend outward from the chip placement area through the first edge, and the second protrusions The block is adjacent to the first side, and the first bumps are farther away from the first side than the second bumps.
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