TWI702700B - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

A semiconductor device including a microelectromechanical systems (MEMS) transducer die, a cover plate, a plurality of stud bumps, and an encapsulation layer is provided. The MEMS transducer die has a MEMS transducer and a plurality of conductive pads on the same side. The cover plate has a recess and a plurality of through holes. The cover is bonded to the MEMS transducer die. The MEMS transducer is accommodated in the recess. The through holes are correspond to conductive pads. The stud bumps are disposed within the openings and are connected to the conductive pads. The encapsulation layer is filled into the opening and laterally encapsulates the stud bumps and exposes a portion of the stud bumps. A method of manufacturing a semiconductor device is also provided.

Description

Semiconductor element and its manufacturing method

The present invention relates to a semiconductor element and a manufacturing method thereof, and in particular to a semiconductor element with a microelectromechanical sensor and a manufacturing method thereof.

In recent years, as electronic products such as smart phones, tablet computers, and interactive game consoles have begun to use MEMS inertial sensing devices (such as accelerometers and gyroscopes), the market demand for MEMS inertial sensing devices has shown rapid growth. As the process technology and related products of accelerometers are relatively mature, the yield rate during mass production has become the next important competitive factor in the MEMS inertial sensing component market.

In the manufacture of microelectromechanical devices, one of the problems currently encountered is that the existing microelectromechanical system components do not have the same manufacturing process and/or mass production specifications as the wafer-level components. Therefore, how to further improve the throughput and yield of MEMS devices has become an urgent issue to be solved at present.

The present invention provides a semiconductor element and a manufacturing method thereof, which has better production capacity and yield.

The invention provides a semiconductor element, which includes a microcomputer inductive sensing crystal grain, a cover plate, a plurality of columnar bumps and an encapsulation layer. The microcomputer inductance measurement die has a microelectromechanical sensor and a plurality of conductive pads on the same side. The cover plate has a recess and a plurality of through holes. The cover plate is connected to the microcomputer inductive sensing die. The microelectromechanical sensor is contained in the recess. The through hole corresponds to the conductive pad. The stud bump is located in the opening and connected to the conductive pad. The encapsulation layer fills the opening and encapsulates the stud bump laterally, and exposes part of the stud bump.

The invention provides a method for manufacturing a semiconductor element. The method includes at least the following steps. Provide substrate. The substrate has a plurality of depressions. Provide MEMS wafers. The microelectromechanical device wafer has a plurality of microelectromechanical sensors and a plurality of conductive pads corresponding to the microelectromechanical sensors. The substrate and the micro-electro-mechanical device wafer are joined, and the micro-electro-mechanical sensor is accommodated in the corresponding recess. A plurality of through holes formed on the substrate exposing the conductive pads. A plurality of welding wires are formed in these openings. A packaging material layer is formed on the substrate to encapsulate the leads. Part of the packaging material layer and part of the leads are removed to form the packaging layer and a plurality of stud bumps respectively.

Based on the above, the manufacturing method of the semiconductor device is to combine the MEMS device wafer and the substrate in a manner similar to wafer-to-wafer bonding or wafer-to-glass bonding. In addition, the stud bumps formed by wire bonding by the wire bonding machine are connected to the conductive pads on the microelectromechanical device wafer. In addition, in the semiconductor element, the encapsulation layer laterally encapsulates the sidewall of the stud bump. Therefore, the production capacity and yield of the semiconductor device and its manufacturing method can be improved, and the production cost can also be reduced.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

1A to 1G show schematic partial cross-sectional views of a method of manufacturing a semiconductor device according to a first embodiment of the present invention. In this embodiment, the manufacturing method of the semiconductor element 100 includes the following steps. 1A, a substrate 110 is provided. The bonding surface 110a of the substrate 110 may be laser engraved, etched or polished to form a plurality of recesses 111 extending from the bonding surface 110a to the inside of the substrate 110, for example. In some embodiments, the substrate 110 may be a bare glass, a bare wafer, or other suitable substrates. Therefore, even if cracks, breakages or damages are caused on the substrate 110 during the process of forming the recess 111 Other conditions that affect yield will not significantly increase manufacturing costs.

1A, a MEMS device wafer (MEMS device wafer) 120 is provided. For example, the MEMS device wafer 120 includes a silicon substrate 122 and a plurality of device regions 121 arranged on the silicon substrate 122 and arranged in an array. The wafer surface 120a of the microelectromechanical device wafer 120 is located in the device area 121, and the wafer back surface 120b of the microelectromechanical device wafer 120 is opposite to the wafer surface 120a. Each element area 121 has a corresponding microelectromechanical sensor 123 (MEMS Transducer). The MEMS sensor 123 may be electrically coupled with the element area 121 so as to be suitable for the element area 121 to directly or indirectly receive the electronic signals sensed by the MEMS sensor 123. For example, the microelectromechanical sensor 123 may include an accelerometer, a gyroscope, a pressure sensor, a thermopile, or other similar electronic sensors, and/ Or micro-shutter, micro-projector, micro-display or other similar electronically controlled optical actuator (actuator).

In this embodiment, the microelectromechanical sensor 123 is located on the corresponding wafer surface 120a of the element area 121, but the invention is not limited to this. In other embodiments, the microelectromechanical sensor 123 may also be embedded in the element area 121.

In addition, each device area 121 has a corresponding plurality of conductive pads 124. The conductive pads 124 can be electrically connected to the device area 121 so that other electronic components 550 can transmit electrical signals to the device area 121 through the corresponding conductive pads 124.

1A and 1B at the same time, the substrate 110 and the MEMS wafer 120 are joined in such a way that the bonding surface 110a of the substrate 110 and the wafer surface 120a of the MEMS wafer 120 face each other, and the MEMS sensor 123 is accommodated in the corresponding recess 111. For example, according to the type of substrate 110, or the bonding surface 110a of the substrate 110 and/or the film on the wafer surface 120a of the MEMS wafer 120, anodic bonding or fusion bonding (Fusion bonding), metal thermal compression bonding (metal thermal compression bonding), eutectic bonding, polymer adhesive bonding (polymer adhesive bonding) or other suitable bonding methods to make the substrate 110 and the MEMS device wafer 120 combined. That is to say, the MEMS device wafer 120 and the substrate 110 can be combined in a manner similar to wafer to wafer bonding or wafer to glass bonding. Reduce the variation in the manufacturing process to improve the production capacity and yield.

The MEMS sensor 123 and the substrate 110 are not in contact with each other and have an appropriate distance between each other, so as to reduce the possible influence of the substrate 110 when the MEMS sensor 123 is operating. Taking this embodiment as an example, since the microelectromechanical sensor 123 is located on the wafer surface 120a corresponding to the element area 121, the depth 111a of the recess 111 can be greater than the height 123a of the microelectromechanical sensor 123 to reduce the microelectromechanical sensor 123 and the substrate. 110 may touch each other. In this way, corresponding to different types of microelectromechanical sensors 123, corresponding adjustments can be made flexibly on the depth 111a of the recess 111, and the production capacity and yield can be improved.

Next, referring to FIG. 1C, a plurality of through holes 112 may be formed on the substrate 110' by a drilling process or an etching process, and each through hole 112 exposes the corresponding conductive pad 124 on the wafer surface 120a. At least part of it.

In this embodiment, the thickness of the substrate 110' can be thinned by a grinding process or a polishing process. Generally speaking, the substrate 110 (shown in FIG. 1B) may be thinned first, and then a plurality of through holes 112 may be formed on the thinned substrate 110' to improve the yield in the process, but the present invention is not limited to this. In other feasible embodiments, a plurality of through holes 112 may be formed on the substrate 110 first, and then the substrate 110 is thinned into the substrate 110'. Or, if a thinned substrate 110' (such as thin glass) is used, a recess 111 can be formed on the thinned substrate 110', and after the substrate 110' is bonded to the MEMS wafer 120, then A plurality of through holes 112 are formed on the substrate 110'.

In this embodiment, the substrate 110' does not expose the device area 121 and the silicon substrate 122 on the MEMS device wafer 120. Taking the through hole 112 formed by the etching process as an example, the through hole 112 uses the conductive pad 124 as an etching stop layer (ESL). Taking the through hole 112 formed by the drilling process as an example, the depth of the drilling can be determined by detecting the signal corresponding to the conductive pad 124 (for example, the atomic signal or the hardness gradient of the conductive pad 124 material). In some embodiments, the conductive pad 124 may be a part of an interconnection formed by a metallization process in the semiconductor manufacturing process of the device region 121. In other words, the exposed surface of the conductive pad 124 may be a part of the wafer surface 120a.

Next, referring to FIG. 1D, a bonding wire 130 is formed in the through hole 112 of the substrate 110'. The bonding wire 130 may be connected to the conductive pad 124 by wire bonding, for example, but the invention is not limited thereto.

In this embodiment, two of the conductive pads 124 between adjacent MEMS sensors 123 can be connected to each other by a bonding wire 130 to improve the production capacity of the step of forming the bonding wire 130, but the present invention does not Limited to this.

Next, referring to FIG. 1E, after forming a plurality of bonding wires 130, a packaging material layer 140 is formed on the surface 110b of the substrate 110' opposite to the bonding surface 110a. The packaging material layer 140 covers the surface 110 b of the substrate and fills the through holes 112 of the substrate to encapsulate the bonding wires 130. In some embodiments, the packaging material layer 140 is formed by forming a molten molding compound on the substrate by a molding process or other suitable methods. Then, the molten molding compound is cooled and solidified.

1F, after the packaging material layer 140 (shown in FIG. 1E) is formed, a part of the packaging material layer 140 and the bonding wires 130 (shown in A part of FIG. 1E) is removed to form an encapsulation layer 141 and a plurality of stud bumps 131 separated from each other. In this way, the top surface 131 a of the stud bump 131 can be substantially coplaner with the packaging surface 141 a of the packaging layer 141. That is, in each through hole 112, the volume of the stud bump 131 is smaller than the volume of the through hole 112, the volume of the encapsulation layer 141 is smaller than the volume of the through hole 112, and the volume of the stud bump 131 is equal to that of the encapsulation layer 141. The total volume is substantially the same as the volume of the through hole 112.

In this embodiment, the stud bump 131 may be formed by wire bonding by a wire bonding machine. Therefore, compared to the diameter of the pillar bump 131 on the top surface 131a, the connection terminal 131b connecting the pillar bump 131 and the conductive pad 124 has a larger width. In addition, since the stud bump 131 and the encapsulation layer 141 are located in the through hole 112, the encapsulation layer 141 laterally encapsulates the sidewall 131c of the stud bump 131 and exposes the top surface 131a of the stud bump 131, so that the pillar shape The sidewall 131c of the bump 131 does not directly contact the substrate 110'. Therefore, the packaging layer 141 located in the through hole 112 can provide a good buffer between the substrate 110' and the stud bump 131, so as to reduce the thermal expansion of the substrate 110' and the MEMS wafer 120 in the subsequent manufacturing process. The coefficient of thermal expansion (CTE) is not matched, which may cause the stud bump 131 to be separated from the conductive pad 124 on the MEMS wafer 120. Therefore, there are more choices in the material of the substrate 110', and the manufacturing cost can be reduced.

After the above-mentioned manufacturing process, the fabrication of the semiconductor device 100 of this embodiment can be substantially completed. The aforementioned semiconductor device 100 includes a microelectromechanical device wafer 120, a substrate 110', a plurality of stud bumps 131, and an encapsulation layer 141. The microelectromechanical device wafer 120 includes a silicon substrate 122, a plurality of device regions 121, a plurality of microelectromechanical sensors 123, and a plurality of conductive pads 124. The device regions 121 are located on the silicon substrate 122 and arranged in an array. The microelectromechanical sensor 123 is configured corresponding to the element area 121 and is electrically coupled with the element area 121. The conductive pad 124 is configured corresponding to the device area 121 and is electrically connected to the device area 121. The substrate 110' has a plurality of recesses 111 and a plurality of through holes 112. The MEMS sensor 123 on the MEMS wafer 120 is located in the recess 111 of the substrate 110'. The through holes 112 of the substrate 110' are provided corresponding to the conductive pads 124.

In this embodiment, the stud bumps 131 can be formed by wire bonding by a wire bonding machine, and the bonding wires (shown in FIG. 1E) forming the stud bumps 131 can be used to form the packaging layer 141 It has been electrically connected to the conductive pad 124 before. In general through mold via (TMV), through silicon via (TSV) or through glass via (TGV), it is usually on the molding compound, silicon substrate or glass substrate A through via is formed, and then a conductive via is formed by electroplating, deposition or other similar methods of filling a conductive material. However, the machine used in the above-mentioned manufacturing process is relatively expensive and consumes more power in the manufacturing process. In addition, the aforementioned through-hole technology often reduces the conductivity of the conductive via due to smear left in the via. Therefore, an additional desmear process is often required in general piercing technology. Since the bonding wires 130 (shown in FIG. 1D or FIG. 1E) forming the stud bumps 131 in this embodiment may be electrically connected to the conductive pads 124 before the packaging layer 141 is formed, they may have better conductivity And the removal process of the molding compound and the subsequent filling process of the conductive material can be omitted, and the productivity can be improved. In addition, compared with preformed conductive pillars, the pillar bumps 131 formed by wire bonding by a wire bonding machine can have a lower production cost, and can have a better fine pitch. pitch), so the configuration can have greater flexibility.

2 is a schematic partial cross-sectional view of a partial manufacturing method of a semiconductor device according to a second embodiment of the present invention. In this embodiment, the manufacturing method of the semiconductor device 200 is similar to the manufacturing method of the semiconductor device 100 of the previous embodiment, and similar components are denoted by the same reference numerals, and have similar functions, materials, or formation methods, and description is omitted. Specifically, the steps depicted in FIGS. 2A to 2B may be cross-sectional schematic diagrams of the semiconductor device manufacturing method following the steps of FIG. 1F.

Please refer to FIG. 2A. In this embodiment, the semiconductor device 100 shown in FIG. 1F may be subjected to a singulation process to singulate the microelectromechanical sensor 123 to form a plurality of semiconductor devices as shown in FIG. 2B. Component 100. The singulation process includes, for example, cutting with a rotating blade or a laser beam, but the invention is not limited thereto.

It is worth noting that after the singulation process, similar component symbols will be used for singulated components. For example, the singulated MEMS device wafer 120 can be a plurality of microcomputer inductive sensing die 220, and the singulated MEMS device wafer 120 has a silicon substrate 122, a plurality of device regions 121, The plurality of microelectromechanical sensors 123 and the plurality of conductive pads 124 can correspondingly be the silicon substrate 122, the element area 121, the microelectromechanical sensor 123, and the plurality of conductive pads 124 of the microcomputer inductive sensing die 220. The wafer surface 120a of the circle 120 is singulated to form the sensing surface 220a of the microcomputer inductive sensing die 220. The singulated substrate 110 may be the cover 210, and the singulated substrate 110 has the recess 111 and The plurality of through holes 112 may correspond to the recesses 111 of the cover 210 and the plurality of through holes 112. The singulated stud bumps 131 are called stud bumps 131, and the singulated encapsulation layer 141 is It is called an encapsulation layer 141, and so on. Other singulated components will follow the same component symbol rules described above, and will not be repeated here.

After the above-mentioned manufacturing process, the fabrication of the semiconductor device 200 of this embodiment can be substantially completed. The aforementioned semiconductor device 200 includes a microcomputer inductive sensing die 220, a cover 210, a plurality of stud bumps 131 and a packaging layer 141. The microcomputer inductive sensing die 220 includes a silicon substrate 122, a component area 121, a microelectromechanical sensor 123, and a plurality of conductive pads 124. The element area 121, the microelectromechanical sensor 123 and the conductive pad 124 are located on the same side of the silicon substrate 122. The microelectromechanical sensor 123 is electrically coupled with the element area 121. The conductive pad 124 is electrically connected to the device region 121, and the conductive pad 124 protrudes from the sensing surface 220a. The cover 210 has a recess 111 and a plurality of through holes 112. The microelectromechanical sensor 123 on the microcomputer inductive sensing die 220 is located in the recess 111 of the cover 210, and the height 123a of the microelectromechanical sensor 123 is smaller than the depth 111a of the recess 111. The through hole 112 of the cover 210 is provided corresponding to the conductive pad 124. The stud bump 131 and the encapsulation layer 141 are located in the through hole 112. The encapsulation layer 141 laterally encapsulates the sidewall 131 c of the stud bump 131 and exposes the top surface 131 a of the stud bump 131.

3 is a schematic partial cross-sectional view of a partial manufacturing method of a semiconductor device according to a third embodiment of the present invention. Specifically, the step shown in FIG. 3 may be a schematic cross-sectional view of a method for manufacturing a semiconductor device following the step of FIG. 1C.

Please refer to FIGS. 1D and 3, the difference between the manufacturing process of this embodiment and the manufacturing process of the above-mentioned embodiment is that the bonding wires 330 in each through hole 112 are separated from each other, and each bonding wire 330 is conductively connected to a corresponding one. The pad 124 is electrically connected. The manufacturing process after this is roughly the same as or similar to that of FIGS. 1E to 1F to form a semiconductor device similar to that shown in FIG. 1F, so it will not be repeated.

4 is a schematic partial cross-sectional view of a partial manufacturing method of a semiconductor device 100 according to a fourth embodiment of the present invention. 1A and 4, the difference between the manufacturing process of this embodiment and the manufacturing process of the foregoing embodiment is that the substrate 110 and the microelectromechanical device wafer 120 can be bonded to each other through the adhesive layer 450, and the adhesive layer 450 has many One opening 451 corresponding to the recess 111 of the substrate 110.

The manufacturing process after this is roughly the same as or similar to that of FIG. 1B to FIG. 1F to form a semiconductor device similar to that shown in FIG. 1F, so it will not be repeated.

5A to 5B are schematic partial cross-sectional views of a part of a method for manufacturing a semiconductor device according to a fifth embodiment of the present invention. In this embodiment, the manufacturing method of the semiconductor element 500 is similar to the manufacturing method of the semiconductor element 100 of the previous embodiment, and similar components are denoted by the same reference numerals and have similar functions, materials or formation methods, and descriptions are omitted. Specifically, the steps depicted in FIGS. 5A to 5B may be cross-sectional schematic diagrams of the semiconductor device manufacturing method following the steps of FIG. 2B.

Please refer to FIG. 5A. In this embodiment, the method of manufacturing the semiconductor device 500 further includes providing an electronic device 550. The electronic component 550 includes a circuit substrate 551, a chip 552, a plurality of connection terminals 553, and a plurality of conductive terminals 554. The chip 552 is electrically connected to the circuit substrate 551 by flip chip bonding. The connecting terminal 553 is electrically connected to the circuit substrate 551, and the connecting terminal 553 and the chip 552 are located on the same side of the circuit substrate 551. The conductive terminal 554 is electrically connected to the circuit substrate 551, and the conductive terminal 554 and the chip 552 are located on the opposite side of the circuit substrate 551. The chip 552 may be a die, a packaged chip, a stacked chip package, or an Application-Specific Integrated Circuit (ASIC), but the invention does not Limited to this.

Please continue to refer to FIG. 5A to electrically connect the electronic component 550 and the stud bump 131 to form the semiconductor component 500 as shown in FIG. 5B. For example, a reflow process may be used to connect the connecting terminal 553 of the electronic component 550 with the top surface 131 a of the stud bump 131.

After the above-mentioned manufacturing process, the fabrication of the semiconductor device 100 of this embodiment can be substantially completed. The semiconductor element 100 of this embodiment is similar to the semiconductor element 100 of the above-mentioned embodiment, and the difference is that the semiconductor element 100 further includes an electronic element 550. The electronic component 550 includes a circuit substrate 551, a chip 552, a plurality of connection terminals 553, and a plurality of conductive terminals 554. The cover 210 is located between the circuit substrate 551 and the sensing die. The chip 552 is electrically connected to the circuit substrate 551 by flip-chip bonding, and the chip 552 is disposed between the circuit substrate 551 and the cover 210. The connection terminal 553 is located between the circuit substrate 551 and the stud bump 131, and the connection terminal 553 is electrically connected to the circuit substrate 551110 and the stud bump 131. The conductive terminals 554 and the chip 552 are located on opposite sides of the circuit substrate 551, and the conductive terminals 554 are electrically connected to the circuit substrate 551.

In summary, the manufacturing method of the semiconductor device of the present invention combines the wafer of the microelectromechanical device with the substrate in a manner similar to wafer-to-wafer bonding or wafer-to-glass bonding. In addition, the stud bumps formed by wire bonding by the wire bonding machine are connected to the conductive pads on the microelectromechanical device wafer. In addition, in the semiconductor element, the encapsulation layer laterally encapsulates the sidewall of the stud bump. Therefore, the production capacity and yield of the semiconductor device and its manufacturing method can be improved, and the production cost can also be reduced.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

100、200、500‧‧‧Semiconductor element 110,110'‧‧‧Substrate 110a‧‧‧Joint surface 111‧‧‧Concavity 111a‧‧‧Concavity depth 110b‧‧‧Surface 112‧‧‧Through hole 210‧‧ ‧Cover plate 120‧‧‧Microelectromechanical component wafer 121‧‧‧Component area 122‧‧‧Silicon substrate 120a‧‧‧wafer surface 120b‧‧‧wafer back 123‧‧‧MEMS sensor 123a‧‧‧ The height of the sensor 124‧‧‧Conductive pad 220‧‧‧Microcomputer inductive sensing die 220a‧‧‧Sensing surface 130,330‧‧‧Wire bonding 131‧‧‧Cylinder bump 131a‧‧Top Surface 131b‧‧‧Connecting terminal 131c‧‧‧Sidewall 140‧‧‧Packaging material layer 141‧‧‧Packaging layer 141a‧‧Packing surface 450‧‧‧Adhesive layer 451‧‧‧ Opening 550‧‧‧Electronic component 551 ‧‧‧Circuit board 552‧‧‧Chip 553‧‧‧Connecting terminal 554‧‧‧Conductive terminal

1A to 1F are schematic partial cross-sectional views of a method of manufacturing a semiconductor device according to a first embodiment of the present invention. 2A to 2B are schematic partial cross-sectional views of a part of a method for manufacturing a semiconductor device according to a second embodiment of the present invention. 3 is a schematic partial cross-sectional view of a partial manufacturing method of a semiconductor device according to a third embodiment of the present invention. 4 is a schematic partial cross-sectional view of a part of a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention. 5A to 5B are schematic partial cross-sectional views of a part of a method for manufacturing a semiconductor device according to a fifth embodiment of the present invention.

200‧‧‧Semiconductor components

111‧‧‧Sag

111a‧‧‧depth

112‧‧‧Through hole

210‧‧‧Cover plate

121‧‧‧Component area

122‧‧‧Silicon substrate

123‧‧‧Microelectromechanical sensor

123a‧‧‧Height

124‧‧‧Conductive pad

220‧‧‧Microcomputer inductance measuring die

220a‧‧‧Sensing surface

131‧‧‧Cylinder bump

131a‧‧‧Top surface

131c‧‧‧ side wall

141‧‧‧Packaging layer

Claims (9)

A semiconductor element includes: a microcomputer inductive sensing die with a microelectromechanical sensor and a plurality of conductive pads on the same side; a cover plate with a recess and a plurality of through holes, wherein the cover plate is connected to the The microcomputer inductance detects the die, the microelectromechanical sensor is accommodated in the recess, and the through holes correspond to the conductive pads; a plurality of columnar bumps are located in the through holes and connected to the conductive contacts Pad; a circuit substrate, wherein the cover plate is located between the circuit substrate and the sensing die; a chip is electrically connected to the circuit substrate by flip chip bonding, and the chip is disposed on the circuit substrate and the Between the cover plates; a plurality of connecting terminals located between the circuit substrate and the stud bumps and electrically connected to the circuit substrate and the stud bumps; a plurality of conductive terminals and the chip located in the circuit The opposite side of the substrate is electrically connected to the circuit substrate; and an encapsulation layer is filled in the through holes and laterally encapsulates the stud bumps, and exposes part of the stud bumps. According to the semiconductor device described in claim 1, wherein the height of the microelectromechanical sensor is smaller than the depth of the recess. The semiconductor device described in item 1 of the scope of patent application further includes an adhesive layer located between the sensing die and the cover plate. As for the semiconductor device described in item 1 of the scope of patent application, one end of the pillar-shaped bumps away from the microcomputer inductive sensing die does not directly contact the cover plate. A method for manufacturing a semiconductor element includes: providing a substrate with a plurality of recesses; providing a microelectromechanical element wafer having a plurality of microelectromechanical sensors and a plurality of conductive contacts corresponding to the microelectromechanical sensors Pad; bonding the substrate and the microelectromechanical device wafer, and the microelectromechanical sensors are accommodated in the corresponding recesses; a plurality of through holes formed on the substrate exposing the conductive pads; forming a plurality of Bonding wires in the through holes; forming a packaging material layer on the substrate to encapsulate the bonding wires; and removing part of the packaging material layer and part of the bonding wires to form a package respectively Layers and multiple stud bumps. As described in item 5 of the scope of patent application, the method for manufacturing a semiconductor device further includes: performing a singulation process to singulate the MEMS sensors. The method for manufacturing a semiconductor device according to claim 5, wherein the step of bonding the substrate and the device wafer includes: forming an adhesive layer on the substrate or the microelectromechanical device wafer to bond the substrate Wafer with the MEMS element. According to the method for manufacturing a semiconductor device as described in claim 5, the conductive pads between the adjacent MEMS sensors are electrically connected to each other by the bonding wires, and the portions are removed After the wire bonding, the conductive pads between the adjacent sensors are electrically separated from each other. As described in item 5 of the scope of patent application, the method for manufacturing a semiconductor element further includes: providing an electronic element, including: a circuit substrate; a chip electrically connected to the circuit substrate by flip chip bonding; and multiple connections Terminals electrically connected to the circuit substrate and located on the same side of the circuit substrate as the chip; and a plurality of conductive terminals electrically connected to the circuit substrate and located on the opposite side of the circuit substrate from the chip; and bonding the electronics The connecting terminals and the stud bumps of the device enable the chip to be arranged between the circuit substrate and the cover plate.

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