TWI702644B - Semiconductor processing plate - Google Patents

Semiconductor processing plate Download PDF

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TWI702644B
TWI702644B TW106103919A TW106103919A TWI702644B TW I702644 B TWI702644 B TW I702644B TW 106103919 A TW106103919 A TW 106103919A TW 106103919 A TW106103919 A TW 106103919A TW I702644 B TWI702644 B TW I702644B
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semiconductor processing
plasticizer
mass
adipate
adhesive layer
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TW201802899A (en
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中村優智
安達一政
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日商琳得科股份有限公司
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • C09J7/24Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/245Vinyl resins, e.g. polyvinyl chloride [PVC]
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0016Plasticisers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/04Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08L27/06Homopolymers or copolymers of vinyl chloride
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J201/00Adhesives based on unspecified macromolecular compounds
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

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  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一種半導體加工板片,係具備基材膜、及被層積在該基材膜的至少一面側的黏著劑層之半導體加工板片,其特徵在於基材膜係含有氯乙烯系樹脂、作為可塑劑之己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,在基材膜,己二酸酯系可塑劑的含量對己二酸酯系可塑劑與對苯二甲酸酯系可塑劑的合計含量之質量比率為50~80質量%。使用此種半導體加工板片時,雖然使用鄰苯二甲酸烷酯的代替物質作為可塑劑,但是能夠顯示充分的柔軟性,且在從被黏著物剝離時能夠抑制產生殘渣物。 A semiconductor processing sheet is provided with a substrate film and an adhesive layer laminated on at least one side of the substrate film, characterized in that the substrate film contains a vinyl chloride resin as a plastic Adipate-based plasticizers and terephthalate-based plasticizers, the content of adipate-based plasticizers and terephthalate-based plasticizers in the substrate film The mass ratio of the total content of the plasticizer is 50 to 80% by mass. When such a semiconductor processing sheet is used, although a substitute for alkyl phthalate is used as a plasticizer, it can exhibit sufficient flexibility and can suppress the generation of residues when peeling from an adherend.

Description

半導體加工板片 Semiconductor processing plate

本發明,係有關於一種在將半導體晶圓等的被加工物進行加工時,貼附該被加工物之半導體加工板片。 The present invention relates to a semiconductor processing sheet for attaching a processed object such as a semiconductor wafer when the processed object is processed.

例如,矽、砷化鎵等的半導體晶圓及各種組件類(以下,有將該等彙總記載為「被加工物」之情形),係在大直徑的狀態下製造之後,被切斷分離(切割)成為元件小片(以下,記載為「晶片」),同時將各個剝離(拾取)且被移送至下一個步驟之裝配步驟。此時,半導體晶圓等的被加工物係在被貼附於具備基材膜及黏著劑層之半導體加工板片的狀態下,施行切割、洗淨、乾燥、擴展、拾取及裝配的各步驟。 For example, semiconductor wafers such as silicon and gallium arsenide and various components (hereinafter, these are collectively referred to as "processed objects") are manufactured in a large diameter state and then cut and separated ( Dicing) into small component pieces (hereinafter, referred to as "wafer"), and at the same time, peel off (pick up) each and move to the next step of assembly. At this time, the processed objects such as semiconductor wafers are subjected to the various steps of dicing, cleaning, drying, expansion, picking, and assembly in the state of being attached to the semiconductor processing sheet with the base film and the adhesive layer. .

在上述的擴展,係為了使晶片的拾取變成容易,將半導體加工板片進行擴展而使晶片間隔分離,且在拾取後使半導體加工板片回復原來的狀態。因而,半導體加工板片、特別是半導體加工板片的基材膜,係被要求能夠擴展及復原之伸縮性(擴展性)。因此作為該基材膜,多半是使用含有可塑劑之聚氯乙烯膜(專利文獻1、2)。 In the above-mentioned expansion, in order to facilitate the pickup of wafers, the semiconductor processing plates are expanded to separate the wafers, and the semiconductor processing plates are restored to their original state after pickup. Therefore, the semiconductor processing sheet, especially the base film of the semiconductor processing sheet, is required to be expandable and recoverable (expandability). Therefore, as the base film, a polyvinyl chloride film containing a plasticizer is mostly used (Patent Documents 1 and 2).

作為被調配在聚氯乙烯之可塑劑,係使用鄰苯二甲酸的烷酯、典型地係使用鄰苯二甲酸二辛酯(DOP)和鄰苯二甲酸二丁酯(DBP)。含有DOP、DBP等的可塑劑之軟質聚氯乙 烯(PVC)膜,因為其兼具優異的機械特性(PVC)所具有的剛性、及可塑劑所得到的柔軟性,所以被廣泛地使用作為半導體加工板片用的基材。 As the plasticizer formulated in polyvinyl chloride, alkyl phthalate is used, typically dioctyl phthalate (DOP) and dibutyl phthalate (DBP) are used. Soft polyvinyl chloride containing plasticizers such as DOP and DBP Vinyl (PVC) films are widely used as substrates for semiconductor processing plates because they have both the rigidity of excellent mechanical properties (PVC) and the flexibility of plasticizers.

但是,DOP和DBP之鄰苯二甲酸烷酯,係在歐洲之RoHS(有關於危險物質之限制)指令的管制對象候補物質,又,在REACH(在歐盟用以保護人體健康和環境之歐洲議會及歐洲理事會法規),可舉出作為SVHC(高關注物質)的認可物質。因此,今後針對鄰苯二甲酸烷酯的使用,被限制的可能性為非常高,而進行代替物質的檢索。 However, the alkyl phthalates of DOP and DBP are candidate substances under the control of the RoHS (Restriction on Hazardous Substances) Directive in Europe, and in REACH (European Parliament for the protection of human health and the environment in the EU). And the European Council Regulations), can be cited as SVHC (Substances of Very High Concern) approved substances. Therefore, the possibility that the use of alkyl phthalate will be restricted in the future is very high, and a search for substitute substances will be carried out.

作為鄰苯二甲酸烷酯的代替物,有提案揭示一種將對苯二甲酸二(2-乙基己基)酯和己二酸聚酯使用作為氯乙烯系基材的可塑劑之黏著板片(專利文獻3,4)。 As an alternative to alkyl phthalate, there is a proposal to disclose an adhesive sheet that uses bis(2-ethylhexyl) terephthalate and adipic acid polyester as a plasticizer for vinyl chloride-based substrates (patent Literature 3, 4).

先前技術文獻 Prior art literature 專利文獻 Patent literature

[專利文獻1]日本特開2001-207140號公報 [Patent Document 1] Japanese Patent Application Publication No. 2001-207140

[專利文獻2]日本特開2010-260893號公報 [Patent Document 2] JP 2010-260893 A

[專利文獻3]日本特開2012-184369號公報 [Patent Document 3] JP 2012-184369 A

[專利文獻4]日本特開2015-187245號公報 [Patent Document 4] Japanese Patent Application Publication No. 2015-187245

可是,在氯乙烯系基材的一面設置有黏著劑層之半導體加工板片,在製成板片後至使用為止之期間,基材內部的可塑劑有移行至黏著劑層內部且被吸收在黏著劑層內部之 情形。此時,依照可塑劑選擇,在將半導體加工板片從半導體剝離時,可塑劑本身有產生以殘渣物的方式殘留在半導體、或與黏著劑成分的混合物的方式殘留在半導體之不良(以下,有將該等彙總而簡稱為「殘渣物」之情形)。 However, for semiconductor processing plates with an adhesive layer provided on one side of a vinyl chloride-based substrate, the plasticizer inside the substrate migrates to the inside of the adhesive layer and is absorbed in the period after the plate is made to the time of use. Inside the adhesive layer situation. At this time, according to the choice of plasticizer, when the semiconductor processing sheet is peeled from the semiconductor, the plasticizer itself may remain in the semiconductor as a residue or a mixture with the adhesive component. There are cases where these are collectively referred to as "residues").

本發明係鑒於如上述的實際情形而進行,其目的係提供一種半導體加工板片,雖然使用鄰苯二甲酸烷酯的代替物質作為可塑劑,但是能夠顯示充分的柔軟性,而且能夠抑制從被黏著物剝離時產生殘渣物。 The present invention has been made in view of the above-mentioned actual situation, and its object is to provide a semiconductor processing sheet that uses alkyl phthalate substitutes as plasticizers, but can exhibit sufficient flexibility and can suppress Residues are generated when the adhesive is peeled off.

本發明者等,係發現在使用對苯二甲酸酯系可塑劑和使用己二酸酯系可塑劑作為氯乙烯系基材的可塑劑時,雖然會產生殘渣物,但是藉由將對苯二甲酸酯系可塑劑與己二酸酯系可塑劑以預定比率併用時,能夠抑制殘渣物的產生,而完成了本發明。 The inventors of the present invention have discovered that when terephthalate plasticizers and adipate plasticizers are used as plasticizers for vinyl chloride-based substrates, although residues are generated, the use of benzene When a diformate-based plasticizer and an adipate-based plasticizer are used in combination at a predetermined ratio, the generation of residues can be suppressed, and the present invention has been completed.

亦即,本發明第1係提供一種半導體加工板片,係具備基材膜、及被層積在前述基材膜的至少一面側的黏著劑層之半導體加工板片,其特徵在於前述基材膜係含有氯乙烯系樹脂、作為可塑劑之己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,在前述基材膜,前述己二酸酯系可塑劑的含量相對於前述己二酸酯系可塑劑與前述對苯二甲酸酯系可塑劑的合計含量之質量比率為50~80質量%(發明1)。 That is, the first aspect of the present invention provides a semiconductor processing sheet comprising a substrate film and an adhesive layer laminated on at least one side of the substrate film, characterized in that the substrate The film contains vinyl chloride resin, adipate plasticizer and terephthalate plasticizer as plasticizers. In the base film, the content of the adipate plasticizer is relative to the above The mass ratio of the total content of the diacid ester plasticizer and the aforementioned terephthalate plasticizer is 50 to 80% by mass (Invention 1).

上述發明(發明1)之半導體加工板片的基材膜,雖然使用鄰苯二甲酸烷酯的代替物質作為可塑劑,但是顯示充分的柔軟性。又,因為上述發明(發明1)之半導體加工板片的基 材膜,係以預定比率含有己二酸酯系可塑劑及苯二甲酸酯系可塑劑,所以具備該基材膜之半導體加工板片,係成為從被黏著物剝離時能夠抑制產生殘渣物者。 The substrate film of the semiconductor processing sheet of the above-mentioned invention (Invention 1), although using an alkyl phthalate substitute as a plasticizer, exhibits sufficient flexibility. Also, because the semiconductor processing plate of the above invention (Invention 1) The material film contains adipate-based plasticizer and phthalate-based plasticizer in a predetermined ratio, so the semiconductor processing board provided with the substrate film is capable of suppressing the generation of residues when peeling from the adherend By.

在上述發明(發明1),在前述基材膜之依據JIS K7161-1:2014的拉伸試驗之MD方向的25%應力係以5~16MPa為佳(發明2)。 In the above invention (Invention 1), the 25% stress in the MD direction of the tensile test in accordance with JIS K7161-1:2014 of the base film is preferably 5-16 MPa (Invention 2).

上述發明(發明1、2),相對於前述氯乙烯系樹脂100質量份,在前述基材膜之前述可塑劑的合計含量係以18~65質量份為佳(發明3)。 In the above inventions (Inventions 1 and 2), the total content of the plasticizer in the base film is preferably 18 to 65 parts by mass relative to 100 parts by mass of the vinyl chloride resin (Invention 3).

在上述發明(發明1~3),前述己二酸酯系可塑劑係以含有己二酸聚酯為佳(發明4),前述己二酸聚酯的數量平均分子量係以400~1500為佳(發明5)。 In the above inventions (Inventions 1 to 3), the adipic acid ester plasticizer is preferably a polyester containing adipic acid (Invention 4), and the number average molecular weight of the adipic acid polyester is preferably 400 to 1500 (Invention 5).

在上述發明(發明1~5),前述己二酸酯系可塑劑係以含有己二酸酯單體為佳(發明6)。 In the above inventions (Inventions 1 to 5), the adipate plasticizer system preferably contains an adipate monomer (Invention 6).

在上述發明(發明6),前述己二酸酯單體係以選自由己二酸二(2-乙基己基)酯、己二酸二異壬酯、己二酸二異癸酯及己二酸二(2-丁氧基乙基)酯所組成群組之1種或2種以上為佳(發明7)。 In the above invention (Invention 6), the aforementioned adipate mono-system is selected from the group consisting of di(2-ethylhexyl) adipate, diisononyl adipate, diisodecyl adipate, and adipate. One type or two or more types of bis(2-butoxyethyl) acid esters are preferred (Invention 7).

在上述發明(發明1~7),前述對苯二甲酸酯系可塑劑係以對苯二甲酸二(2-乙基己基)酯為佳(發明8)。 In the above inventions (Inventions 1 to 7), the terephthalate plasticizer is preferably bis(2-ethylhexyl) terephthalate (Invention 8).

上述發明(發明1~8),在前述基材膜,鄰苯二甲酸二(2-乙基己基)酯、鄰苯二甲酸二丁酯、鄰苯二甲酸苄基丁酯及鄰苯二甲酸二異丁酯的含量係任一者均以0.001質量%以下為佳(發明9)。 The above inventions (Inventions 1 to 8), in the aforementioned base film, bis(2-ethylhexyl) phthalate, dibutyl phthalate, benzylbutyl phthalate and phthalic acid The content of diisobutyl ester is preferably 0.001% by mass or less (Invention 9).

在上述發明(發明1~9),前述黏著劑層係以由能量線硬化性黏著劑組成物所形成為佳(發明10)。 In the above inventions (Inventions 1 to 9), the adhesive layer is preferably formed of an energy ray curable adhesive composition (Invention 10).

依照本發明,能夠提供一種雖然使用鄰苯二甲酸烷酯的代替物質作為可塑劑,但是顯示充分的柔軟性,且在從被黏著物剝離時能夠抑制產生殘渣物之半導體加工板片。 According to the present invention, it is possible to provide a semiconductor processing sheet that uses an alkyl phthalate substitute as a plasticizer, but exhibits sufficient flexibility and can suppress the generation of residues when peeling from an adherend.

用以實施發明之形態 The form used to implement the invention

以下,說明本發明的一實施形態之半導體加工板片。 Hereinafter, a semiconductor processing sheet according to an embodiment of the present invention will be described.

[基材膜] [Base film]

本實施形態之半導體加工板片所具備之基材膜,係含有氯乙烯系樹脂,而且以預定比率含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑作為可塑劑。 The substrate film included in the semiconductor processing sheet of this embodiment contains vinyl chloride resin, and contains an adipate-based plasticizer and a terephthalate-based plasticizer as plasticizers at a predetermined ratio.

1.氯乙烯系樹脂 1. Vinyl chloride resin

在本實施形態所使用的基材膜,係含有氯乙烯系樹脂。所謂氯乙烯系樹脂,係意味著具有-CH2-CHCl-表示的重複單元之聚合物全部,包含氯乙烯的同元聚合物、乙烯-氯乙烯共聚物等氯乙烯與聚合性單體的共聚物、氯化氯乙烯共聚物等將同元聚合物或共聚物改質而成者、進而氯化聚乙烯等構造上與氯乙烯樹脂類似的氯化聚烯烴。該等氯乙烯系樹脂可單獨使用1種,亦可併用2種以上。 The base film used in this embodiment contains vinyl chloride resin. The so-called vinyl chloride resin means all polymers having repeating units represented by -CH 2 -CHCl-, including copolymers of vinyl chloride and polymerizable monomers such as homopolymers of vinyl chloride and ethylene-vinyl chloride copolymers. Chlorinated polyolefins, such as chlorinated vinyl chloride copolymers, modified homopolymers or copolymers, and chlorinated polyethylene, which is similar in structure to vinyl chloride resins. These vinyl chloride resins may be used individually by 1 type, and may use 2 or more types together.

上述氯乙烯系樹脂之平均聚合度的下限值,係以300以上為佳,以800以上為較佳。又,上述氯乙烯系樹脂之平均聚合度的上限值,係以2500以下為佳,以2000以下為較佳。藉由平均聚合度為上述範圍,具有優異的成形性、加工性且能夠加工成為均勻的薄層膜。在此,所謂氯乙烯系樹脂的平均聚合度,係依據JIS K6720-2:1999而測定之值。 The lower limit of the average degree of polymerization of the vinyl chloride resin is preferably 300 or more, and more preferably 800 or more. In addition, the upper limit of the average degree of polymerization of the vinyl chloride resin is preferably 2500 or less, and more preferably 2000 or less. When the average degree of polymerization is in the above range, it has excellent moldability and processability and can be processed into a uniform thin film. Here, the average degree of polymerization of the vinyl chloride resin is a value measured in accordance with JIS K6720-2:1999.

2.可塑劑 2. Plasticizer

本實施形態所使用之基材膜,係含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,己二酸酯系可塑劑含量對己二酸酯系可塑劑及對苯二甲酸酯系可塑劑的合計含量之質量比率為50~80質量%。 The base film used in this embodiment contains adipate plasticizers and terephthalate plasticizers, and the content of adipate plasticizers terephthalate plasticizers and terephthalate plasticizers The mass ratio of the total content of the formate-based plasticizer is 50 to 80% by mass.

藉由使用己二酸酯系可塑劑及對苯二甲酸酯系可塑劑作為可塑劑,能夠將以氯乙烯系樹脂作為主成分之基材可塑化,使用此種基材膜之半導體加工板片係顯示良好的擴展性。又,在本實施形態,因為不必使用鄰苯二甲酸烷酯,以不純物的方式含有鄰苯二甲酸之可能性銳減,且不擔心環境負荷及具有毒性。而且,如在後述的實施例所揭示,將對苯二甲酸二(2-乙基己基)酯或己二酸聚酯各自單獨使用,作為氯乙烯系基材的可塑劑時,在將半導體加工板片從半導體晶圓等的被加工物剝離時產生殘渣物,但是藉由以上述的質量比率含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,能夠抑制此種殘渣物的產生。 By using adipate-based plasticizers and terephthalate-based plasticizers as plasticizers, substrates with vinyl chloride resins as main components can be plasticized. Semiconductor processing boards using such substrate films The film series shows good scalability. In addition, in this embodiment, since it is not necessary to use alkyl phthalate, the possibility of containing phthalic acid as an impurity is drastically reduced, and there is no concern about environmental impact and toxicity. Furthermore, as disclosed in the later-mentioned examples, when bis(2-ethylhexyl) terephthalate or adipic acid polyester are used alone as a plasticizer for vinyl chloride-based substrates, semiconductor processing Residues are generated when the sheet is peeled from the processed objects such as semiconductor wafers, but by containing the adipate-based plasticizer and the terephthalate-based plasticizer in the above-mentioned mass ratio, such residues can be suppressed The production.

己二酸酯係由己二酸及醇的酯所構成。在本實施形態,作為己二酸酯系可塑劑,可使用己二酸聚酯,亦可使用 己二酸酯單體,亦可將兩者併用。 Adipic acid ester is composed of adipic acid and alcohol ester. In this embodiment, as adipic acid ester plasticizer, adipic acid polyester can be used, and it can also be used The adipate monomer can also use the two together.

在本說明書,「己二酸聚酯」係指己二酸與多元醇的酯。構成己二酸與聚酯之多元醇,係以二價醇為佳,作為二價醇,可舉出乙二醇、丙二醇、二乙二醇、1,4-丁二醇、1,6-己二醇、3-甲基-1,5-戊二醇、新戊二醇、1,4-二羥甲基環己烷等。該等多元醇可單獨使用1種、或併用2種以上。 In this specification, "adipate polyester" refers to the ester of adipic acid and polyol. The polyols constituting adipic acid and polyester are preferably divalent alcohols. Examples of divalent alcohols include ethylene glycol, propylene glycol, diethylene glycol, 1,4-butanediol, 1,6- Hexanediol, 3-methyl-1,5-pentanediol, neopentyl glycol, 1,4-dimethylolcyclohexane, etc. These polyhydric alcohols can be used individually by 1 type or in combination of 2 or more types.

作為上述多元醇,碳數的下限值係以2以上為佳,以3以上為較佳。上限值係以10以下為佳,以8以下為較佳。 As the above-mentioned polyol, the lower limit of the carbon number is preferably 2 or more, and more preferably 3 or more. The upper limit is preferably 10 or less, and more preferably 8 or less.

上述己二酸聚酯之數量平均分子量的下限值,係以400以上為佳,以600以上為較佳。又,上述己二酸聚酯之數量平均分子量的上限值,係以1500以下為佳,以1200以下為較佳。己二酸聚酯的數量平均分子量為上述範圍時,在使用後述的能量線硬化性黏著劑作為構成黏著劑層之黏著劑時,不會阻礙藉由照射能量線來控制黏著力,而能夠使黏著力充分地降低且使被黏著物更容易地剝離。 The lower limit of the number average molecular weight of the adipic acid polyester is preferably 400 or more, more preferably 600 or more. In addition, the upper limit of the number average molecular weight of the adipic acid polyester is preferably 1500 or less, and more preferably 1200 or less. When the number-average molecular weight of the adipic acid polyester is in the above range, when the energy-ray curable adhesive described later is used as the adhesive that constitutes the adhesive layer, it will not hinder the control of the adhesive force by irradiation of energy rays, and can make Adhesion is sufficiently reduced and the adherend can be peeled off more easily.

在本說明書之「己二酸酯單體」係指己二酸與單醇的酯。己二酸酯單體係除了由己二酸1分子與單醇1分子所構成之單酯以外,亦包含由己二酸1分子與單醇2分子所構成之二酯,以二酯為佳。 In this specification, "adipate monomer" refers to the ester of adipic acid and monoalcohol. In addition to the monoester composed of 1 molecule of adipic acid and 1 molecule of monoalcohol, the adipate mono-system also includes diesters composed of 1 molecule of adipic acid and 2 molecules of monoalcohol. Diesters are preferred.

在此,可塑劑從基材移行至黏著劑層,係在半導體加工板片的製造後,需要長期間(依照情況為半個月),黏著力在該期間產生變化(在本說明書,係將該現象稱為「黏著力的經時變化」)。但是,使用己二酸酯單體作為可塑劑時,能夠抑制因經時變化引起黏著力低落,認為其理由係因為藉由己 二酸酯單體從基材移行至黏著劑層的移行速度較快速,使得黏著劑層的黏著力早期穩定。又,藉由能夠抑制經時變化引起黏著力低落,能夠將半導體加工板片的製造後至使用為止之保管期間縮短。 Here, the plasticizer migrates from the base material to the adhesive layer. It takes a long period of time (half a month according to the situation) after the manufacture of the semiconductor processing plate, and the adhesive force changes during this period (in this specification, the system will This phenomenon is called "change in adhesion with time"). However, when an adipate monomer is used as a plasticizer, it is possible to suppress the decrease in adhesion due to changes over time. It is believed that the reason is due to The migration speed of the diacid ester monomer from the substrate to the adhesive layer is relatively fast, so that the adhesive force of the adhesive layer is stabilized early. In addition, it is possible to shorten the storage period from the manufacture of the semiconductor processing sheet to the use of the semiconductor processing sheet by suppressing the decrease in adhesive force caused by changes over time.

作為構成己二酸酯單體之單醇,可舉出甲醇、乙醇、丙醇、正丁醇、正戊醇、正己醇、正庚醇、正辛醇、2-乙基己醇、正壬醇、異壬醇、正癸醇、異癸醇、正十二醇、正十四醇等。又,作為上述單醇,可為在分子內具有醚鍵者,例如1-丁氧基乙醇、2-丁氧基乙醇等。該等單醇可單獨使用1種,亦可併用2種以上。 Examples of the monoalcohol constituting the adipate monomer include methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, n-heptanol, n-octanol, 2-ethylhexanol, n-nonane Alcohol, isononanol, n-decyl alcohol, isodecanol, n-dodecanol, n-tetradecanol, etc. In addition, as the above-mentioned monoalcohol, one having an ether bond in the molecule may be used, such as 1-butoxyethanol, 2-butoxyethanol, and the like. These monoalcohols may be used individually by 1 type, and may use 2 or more types together.

作為上述單醇,碳數的下限值係以4以上為佳,以6以上為較佳。上限值係以16以下為佳,以12以下為較佳。藉由構成己二酸酯單體之單醇的碳數為上述範圍,基材具有優異的成形性、加工性,而且能夠增快己二酸酯單體從基材往黏著劑層的移行速度。 As the above-mentioned monool, the lower limit of the carbon number is preferably 4 or more, preferably 6 or more. The upper limit is preferably 16 or less, and more preferably 12 or less. When the carbon number of the monoalcohol constituting the adipate monomer is in the above range, the substrate has excellent formability and processability, and can increase the speed of the adipate monomer from the substrate to the adhesive layer. .

從以上,作為構成己二酸酯單體之單醇,係以2-乙基己醇、異壬醇、異癸醇及2-丁氧基乙醇為佳,以2-乙基己醇及異壬醇為特佳。又,作為己二酸酯單體,係以己二酸二(2-乙基己基)酯、己二酸二異壬酯、己二酸二異癸酯及己二酸二(2-丁氧基乙基)酯為佳,以己二酸二(2-乙基己基)酯及己二酸二異壬酯為特佳。 From the above, as the monoalcohol constituting the adipate monomer, 2-ethylhexanol, isononanol, isodecyl alcohol and 2-butoxyethanol are preferred, and 2-ethylhexanol and iso Nonanol is particularly good. In addition, as the adipate monomer, di(2-ethylhexyl) adipate, diisononyl adipate, diisodecyl adipate and di(2-butoxy adipate) Ethyl ethyl) ester is preferred, and di(2-ethylhexyl) adipate and diisononyl adipate are particularly preferred.

作為己二酸酯系可塑劑,係將己二酸聚酯及己二酸酯單體併用時,兩者的質量比率係相對於己二酸聚酯20質量份,己二酸酯單體係以1質量份以上為佳,以2質量份以上 為較佳,以3質量份以上為特佳。又,己二酸聚酯及己二酸酯單體的質量比率係相對於己二酸聚酯20質量份,以12質量份以下為佳,以10質量份以下為較佳,以8質量份以下為特佳。己二酸聚酯及己二酸酯單體的質量比率為上述範圍內時,能夠更有效地抑制經時變化引起黏著力低落。 As adipic acid ester plasticizer, when adipic acid polyester and adipic acid ester monomer are used together, the mass ratio of the two is relative to 20 parts by mass of adipic acid polyester, adipic acid ester single system 1 part by mass or more is preferable, 2 parts by mass or more Preferably, 3 parts by mass or more is particularly preferred. In addition, the mass ratio of the adipic acid polyester and the adipate monomer is relative to 20 parts by mass of the adipic acid polyester, preferably 12 parts by mass or less, preferably 10 parts by mass or less, and 8 parts by mass The following are particularly good. When the mass ratio of the adipic acid polyester and the adipic acid ester monomer is within the above-mentioned range, it is possible to more effectively suppress the decrease in adhesive force caused by changes over time.

對苯二甲酸酯系可塑劑係由對苯二甲酸與醇的酯所構成,較佳是對苯二甲酸與醇的二酯。作為與對苯二甲酸構成酯之醇,可舉出甲醇、乙醇、丙醇、正丁醇、正戊醇、正己醇、正庚醇、正辛醇、2-乙基己醇、正壬醇、異壬醇、正癸醇、正十二醇、正十四醇等。該等醇可單獨使用1種,亦可併用2種以上。 The terephthalate plasticizer is composed of an ester of terephthalic acid and alcohol, preferably a diester of terephthalic acid and alcohol. Examples of alcohols forming esters with terephthalic acid include methanol, ethanol, propanol, n-butanol, n-pentanol, n-hexanol, n-heptanol, n-octanol, 2-ethylhexanol, n-nonanol , Isononyl alcohol, n-decyl alcohol, n-dodecanol, n-tetradecanol, etc. These alcohols may be used individually by 1 type, and may use 2 or more types together.

作為上述醇,係以碳數6~12的醇為佳,以碳數8~10的醇為更佳,以2-乙基己醇為特佳。亦即,在本實施形態特別適合使用的對苯二甲酸酯系可塑劑為對苯二甲酸二(2-乙基己基)酯。 As the above alcohol, an alcohol having 6 to 12 carbon atoms is preferred, an alcohol having 8 to 10 carbon atoms is more preferred, and 2-ethylhexanol is particularly preferred. That is, the terephthalate plasticizer particularly suitably used in this embodiment is bis(2-ethylhexyl) terephthalate.

在本實施形態的基材膜,相對於上述己二酸酯系可塑劑及對苯二甲酸酯系可塑劑的合計含量,己二酸酯系可塑劑含量的質量比率,其下限值為50質量%以上,以60質量%以上為佳,以70質量%以上為較佳。又,在本實施形態的基材膜,己二酸酯系可塑劑含量對上述合計含量之質量比率,其上限值為80質量%以下,以75質量%以下為佳。 In the base film of this embodiment, the lower limit of the mass ratio of the content of the adipate plasticizer relative to the total content of the adipate plasticizer and the terephthalate plasticizer is 50% by mass or more, preferably 60% by mass or more, and more preferably 70% by mass or more. In addition, in the base film of the present embodiment, the upper limit of the mass ratio of the adipate-based plasticizer content to the total content is 80% by mass or less, preferably 75% by mass or less.

上述質量比率小於50質量%(己二酸酯系可塑劑的含有比率較少)時,由於可塑劑移行至黏著劑層,黏著劑的凝聚力不足之同時,而且由於可塑劑本身移行至被黏著物而在被 黏著物產生殘渣物。另一方面,上述質量比率大於80質量%(己二酸酯系可塑劑的含有比率較多)時,可塑劑移行至黏著劑層時,將黏著劑層的黏著力過度地提高且在被黏著物產生殘渣物之同時,不容易將被黏著物剝離且容易產生拾取不良。 When the above-mentioned mass ratio is less than 50% by mass (the content ratio of adipate-based plasticizer is small), the plasticizer migrates to the adhesive layer, the cohesive force of the adhesive is insufficient, and the plasticizer itself migrates to the adherend While being Adhesives produce residues. On the other hand, when the above-mentioned mass ratio is greater than 80% by mass (the content ratio of the adipate-based plasticizer is large), when the plasticizer migrates to the adhesive layer, the adhesive force of the adhesive layer is excessively increased and the adhesive is At the same time as residues are generated, it is not easy to peel off the adhered objects and easy to pick up defects.

本實施形態之基材膜,係在不損害本實施形態的效果之範圍,亦可併用己二酸酯系可塑劑及對苯二甲酸酯系可塑劑以外的可塑劑,且不是RoHS指令的管制對象候補,而且不是REACH法規的SVHC(高關注物質)之認可物質的可塑劑。作為此種可塑劑,例如可舉出偏苯三甲酸-三-2乙基己酯等的偏苯三甲酸系可塑劑、二異壬基環己烷二碳酸酯等的脂環族酯系可塑劑、癸二酸二辛酯等的癸二酸酯系可塑劑、磷酸三甲苯酯等的磷酸酯系可塑劑;環氧化大豆油等的環氧系可塑劑等。含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑以外的可塑劑時,其含量係沒有特別限定,例如相對於可塑劑總量,以25質量%以下為佳,以15質量%以下為較佳。 The base film of this embodiment is in a range that does not impair the effect of this embodiment, and plasticizers other than adipate-based plasticizers and terephthalate-based plasticizers can also be used in combination, and are not RoHS-compliant. Candidates for control, and are not plasticizers for SVHC (Substances of Very High Concern) approved under REACH regulations. Examples of such plasticizers include trimellitic acid-based plasticizers such as trimellitic acid-tri-2-ethylhexyl, and alicyclic ester-based plasticizers such as diisononylcyclohexane dicarbonate. Sebacate plasticizers such as dioctyl sebacate; phosphate plasticizers such as tricresyl phosphate; epoxy plasticizers such as epoxidized soybean oil. When plasticizers other than adipate-based plasticizers and terephthalate-based plasticizers are contained, the content is not particularly limited. For example, relative to the total amount of plasticizer, it is preferably 25% by mass or less, and 15% by mass % Or less is better.

又,本實施形態之基材膜,不是將含有鄰苯二甲酸烷酯系可塑劑之物排除。例如認為在基材膜的製造步驟,鄰苯二甲酸烷酯系可塑劑有產生污染之可能性。但是,因為鄰苯二甲酸烷酯系可塑劑係前述RoHS指令的管制對象候補物質,而且是REACH法規的SVHC(高關注物質)之認可物質,所以本實施形態之基材膜,係鄰苯二甲酸烷酯系可塑劑、特別是鄰苯二甲酸二(2-乙基己基)酯、鄰苯二甲酸二丁酯、鄰苯二甲酸苄基丁酯及鄰苯二甲酸二異丁酯的含量,任一者均以0.001質量%以下為佳,以不含有任一化合物為特佳。 In addition, the base film of this embodiment does not exclude the thing containing alkyl phthalate type plasticizer. For example, it is considered that the alkyl phthalate plasticizer may cause contamination in the manufacturing step of the base film. However, because the alkyl phthalate plasticizer is a candidate substance under the control of the RoHS directive and is an approved substance of SVHC (Substances of Very High Concern) under the REACH Regulation, the base film of this embodiment is phthalate The content of alkyl formate plasticizers, especially bis(2-ethylhexyl) phthalate, dibutyl phthalate, benzylbutyl phthalate and diisobutyl phthalate Any one is preferably 0.001% by mass or less, and it is particularly preferable not to contain any compound.

相對於構成基材之氯乙烯系樹脂100質量份,在基材膜之上述可塑劑的合計含量之下限值,係以18質量份以上為佳,以22質量份以上為較佳,以25質量份以上為特佳。又,上述可塑劑的合計含量之上限值,係相對於氯乙烯系樹脂100質量份,以65質量份以下為佳,以60質量份以下為較佳,以55質量份以下為特佳。 With respect to 100 parts by mass of the vinyl chloride resin constituting the substrate, the lower limit of the total content of the above-mentioned plasticizer in the substrate film is preferably 18 parts by mass or more, preferably 22 parts by mass or more, and 25 Part by mass or more is particularly good. In addition, the upper limit of the total content of the plasticizer is preferably 65 parts by mass or less, preferably 60 parts by mass or less, and particularly preferably 55 parts by mass or less relative to 100 parts by mass of the vinyl chloride resin.

又,在基材膜之上述可塑劑的含量,亦能夠藉由對各可塑劑的固有可塑化效率值乘以各自的含量而成之可塑化效率換算值來特定。在此,所謂可塑化效率值,係指將相對於聚合度1450的氯乙烯同元聚合物100質量份,調配50質量份鄰苯二甲酸二(正辛基)酯(n-DOP)作為可塑劑,在180℃進行熔融混煉而成之組成物壓縮成形為厚度1mm,且從該板片沖切2號啞鈴型試片,而且將該試片於20℃以200mm/分鐘的速度拉伸延長,且將伸長率成為100%時的應力設作基準值,並且定義為將用以達成該應力所必要的可塑劑量除以n-DOP的調配量亦即50質量份而得到之值,且成為在各可塑劑固有的值。可塑化效率值較小的可塑劑,係因為以較少的調配量而達成與調配50重量份n-DOP時相同的應力,所以能夠說是可塑化效率較佳者。 In addition, the content of the plasticizer in the base film can also be specified by the plasticization efficiency conversion value obtained by multiplying the inherent plasticization efficiency value of each plasticizer by the respective content. Here, the so-called plasticization efficiency value refers to the blending of 50 parts by mass of bis(n-octyl) phthalate (n-DOP) as a plasticizer based on 100 parts by mass of a vinyl chloride homopolymer with a degree of polymerization of 1450. The composition was melt-kneaded at 180°C and compression molded into a thickness of 1mm, and a No. 2 dumbbell-shaped test piece was punched from the plate, and the test piece was stretched at 20°C at a speed of 200mm/min. Elongation, and the stress at which the elongation becomes 100% is set as a reference value, and defined as the value obtained by dividing the amount of plasticizer necessary to achieve the stress by the blending amount of n-DOP, which is 50 parts by mass, and It becomes a value unique to each plasticizer. A plasticizer with a smaller plasticization efficiency value can achieve the same stress as when 50 parts by weight of n-DOP is blended with a smaller blending amount, so it can be said to be a better plasticization efficiency.

可塑化效率換算值,係能夠定義作為對各可塑劑的可塑化效率值乘以各可塑劑含量而得到的值,且意味著將各可塑劑含量進行n-DOP換算而成之值。在本實施形態,上述可塑劑的可塑化效率換算值之合計,係相對於構成基材之氯乙烯系樹脂100質量份,其下限值以25質量份以上為佳,以28質 量份以上為較佳,以30質量份以上為特佳。又,上述可塑劑的含量之上限值,係相對於氯乙烯系樹脂100質量份,以50質量份以下為佳,以48質量份以下為較佳,以45質量份以下為特佳。 The plasticization efficiency conversion value can be defined as a value obtained by multiplying the plasticization efficiency value of each plasticizer by the content of each plasticizer, and means a value obtained by converting the content of each plasticizer into n-DOP. In this embodiment, the total plasticization efficiency conversion value of the above-mentioned plasticizer is based on 100 parts by mass of the vinyl chloride resin constituting the base material, and the lower limit is preferably 25 parts by mass or more, and 28 parts by mass The amount is more than preferably, and more than 30 parts by mass is particularly preferred. In addition, the upper limit of the content of the plasticizer is preferably 50 parts by mass or less, preferably 48 parts by mass or less, and particularly preferably 45 parts by mass or less based on 100 parts by mass of the vinyl chloride resin.

藉由在基材膜之可塑劑的合計含量、或上述可塑化效率換算值的合計為上述範圍,能夠對基材膜賦予適當的柔軟性,例如能夠使半導體加工板片的擴展性成為充分者,另一方面,基材不變為過度柔軟且成為具有優異的操作性者。又,在基材之可塑劑的含量為上述範圍時,能夠抑制因可塑劑從基材移行至黏著劑層而引起黏著劑層性能之經時變化。 When the total content of the plasticizer in the base film or the total of the above-mentioned plasticization efficiency conversion value is in the above range, the base film can be given appropriate flexibility, for example, the expandability of the semiconductor processing sheet can be made sufficient On the other hand, the substrate does not become excessively soft and has excellent operability. In addition, when the content of the plasticizer of the base material is in the above range, it is possible to suppress the change in the performance of the adhesive layer due to the migration of the plasticizer from the base material to the adhesive layer.

3.在基材膜之其它成分 3. Other ingredients in the base film

在本實施形態所使用的基材膜,係在不損害本實施形態的效果之範圍,亦可含有氯乙烯系樹脂以外的樹脂。作為上述氯乙烯系樹脂以外的其它樹脂,例如可舉出乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸酯共聚物等,可單獨使用1種、或併用2種以上。含有氯乙烯系樹脂以外的樹脂時,其含量係沒有特別限定,例如相對於基材膜,以0~20質量%為佳,以0~10質量%為較佳。 The base film used in this embodiment may contain resins other than vinyl chloride resins in a range that does not impair the effects of this embodiment. As other resins other than the above-mentioned vinyl chloride resins, for example, ethylene-vinyl acetate copolymers, ethylene-acrylate copolymers, etc. may be mentioned, and one type may be used alone or two or more types may be used in combination. When a resin other than a vinyl chloride resin is contained, the content is not particularly limited. For example, relative to the base film, it is preferably 0-20% by mass, and more preferably 0-10% by mass.

又,在本實施形態所使用的基材膜,亦可含有熱安定劑、安定化助劑、滑劑、紫外線吸收劑、阻燃劑、抗靜電劑、著色劑等各種添加劑。該等各種添加劑的含量,係只要不損害本實施形態的効果(特別是抑制殘渣物的產生)之範囲(少量)就沒有特別限定,例如相對於氯乙烯系樹脂100質量份,能夠將其上限值設為10質量份以下、1質量份以下、0.1質量 份以下、進而0.05質量份以下。又,各種添加劑的含量之下限值,例如能夠設為0.01質份以上。 In addition, the base film used in this embodiment may contain various additives such as heat stabilizers, stabilizers, lubricants, ultraviolet absorbers, flame retardants, antistatic agents, and colorants. The content of these various additives is not particularly limited as long as it does not impair the effects of this embodiment (especially the suppression of the generation of residues) (small amounts). For example, it can be higher than 100 parts by mass of the vinyl chloride resin. The limit is set to 10 parts by mass or less, 1 part by mass or less, 0.1 parts by mass Parts or less, and moreover 0.05 parts by mass or less. In addition, the lower limit of the content of various additives can be set to 0.01 parts by mass or more, for example.

作為熱安定劑,可舉出硬脂酸鈣、硬脂酸鋇、硬脂酸鎂、二鹽基性硬脂酸鉛等的金屬皂;鹼性亞硫酸鉛、二鹽基性亞磷酸鉛等的鉛糸安定劑;二月桂酸二丁錫、二蘋果酸二丁錫、硫醇二丁錫等的錫系安定劑;鈣系安定劑;鋅系安定劑;鎂系安定劑;鋇系安定劑等,可單獨使用1種、或併用2種以上。 Examples of heat stabilizers include metal soaps such as calcium stearate, barium stearate, magnesium stearate, and dibasic lead stearate; alkaline lead sulfite, dibasic lead phosphite, etc. Lead stabilizer; dibutyl tin dilaurate, dibutyl tin dimalate, dibutyl tin mercaptan and other tin stabilizers; calcium stabilizers; zinc stabilizers; magnesium stabilizers; barium stabilizers Agents, etc., can be used singly or in combination of two or more.

作為滑劑,可舉出脂肪酸系滑劑、脂肪酸醯胺系滑劑、酯系滑劑、聚乙烯蠟、流動石蠟等,可單獨使用1種、或併用2種以上。 Examples of the slip agent include fatty acid-based slip agents, fatty acid amide-based slip agents, ester-based slip agents, polyethylene waxes, fluidized paraffins, etc., and may be used alone or in combination of two or more kinds.

作為紫外線吸收劑,可舉出二苯基酮系、苯并三唑系、氰基丙烯酸酯系、柳酸酯系等,可單獨使用1種,亦可併用2種以上。 Examples of the ultraviolet absorber include benzophenone-based, benzotriazole-based, cyanoacrylate-based, salicylate-based, and the like. One type may be used alone, or two or more types may be used in combination.

作為抗靜電劑,可舉出聚氧伸乙基烷基胺、聚氧伸乙基烷基醯胺、聚氧伸乙基烷基醚、甘油脂肪酸酯、山梨醇酐脂肪酸酯等,可單獨使用1種、或併用2種以上。 Examples of antistatic agents include polyoxyethylene alkyl amine, polyoxyethylene alkyl amide, polyoxyethylene alkyl ether, glycerin fatty acid ester, sorbitan fatty acid ester, etc. One type is used alone, or two or more types are used in combination.

作為著色劑,例如可舉出酞花青系著色劑、喹吖酮(quinacridone)系著色劑、漢薩黃(Hansa Yellow)、茜素色澱(alizarin lake)、氧化鈦、鋅華、永久紅(permanent red)、碳黑等,可單獨使用1種,亦可併用2種以上。 Examples of colorants include phthalocyanine colorants, quinacridone colorants, Hansa Yellow, alizarin lake, titanium oxide, zinc bloom, and permanent red. (permanent red), carbon black, etc., can be used alone or in combination of two or more.

4.基材膜的物性等 4. Physical properties of the base film, etc.

基材膜的厚度,係只要貼附有半導體加工板之被加工物(半導體晶圓等)能夠進行所需要的作業時,就沒有特別限定。 具體而言,基材的厚度係以25μm以上為佳,以50μm以上為特佳。又,該厚度係以200μm以下為佳,以150μm以下為特佳。 The thickness of the base film is not particularly limited as long as the workpiece (semiconductor wafer, etc.) to which the semiconductor processing board is attached can perform the required work. Specifically, the thickness of the substrate is preferably 25 μm or more, and particularly preferably 50 μm or more. In addition, the thickness is preferably 200 μm or less, and particularly preferably 150 μm or less.

本實施形態之基材膜,其在拉伸試驗之MD方向的25%應力的下限值,係以5MPa以上為佳,以7MPa以上為較佳,以9MPa以上為特佳。又,上述MD方向的25%應力的上限值,係以16MPa以下為佳,以15MPa以下為較佳,以14MPa以下為特佳。在此,在拉伸試驗之MD方向的25%應力,係依據JIS K7161-1:2014所測得的值。具體的測定方法係在後述的實施例揭示。 In the base film of this embodiment, the lower limit of the 25% stress in the MD direction of the tensile test is preferably 5 MPa or more, preferably 7 MPa or more, and particularly preferably 9 MPa or more. In addition, the upper limit of the 25% stress in the MD direction is preferably 16 MPa or less, preferably 15 MPa or less, and particularly preferably 14 MPa or less. Here, the 25% stress in the MD direction of the tensile test is a value measured in accordance with JIS K7161-1:2014. The specific measurement method is disclosed in the following Examples.

又,本實施形態的基材膜,其在拉伸試驗之斷裂點應力的下限值,係以14MPa以上為佳,以18MPa以上為較佳,以22MPa以上為特佳。又,上述斷裂點應力的上限值,係以48MPa以下為佳,以44MPa以下為較佳,以38MPa以下為特佳。在此,在拉伸試驗之斷裂點應力,係依據JIS K7161-1:2014所測得的值。 In addition, in the base film of the present embodiment, the lower limit of the breaking point stress in the tensile test is preferably 14 MPa or more, more preferably 18 MPa or more, and particularly preferably 22 MPa or more. In addition, the upper limit of the stress at the breaking point is preferably 48 MPa or less, preferably 44 MPa or less, and particularly preferably 38 MPa or less. Here, the stress at the breaking point in the tensile test is a value measured in accordance with JIS K7161-1:2014.

本實施形態的基材膜,藉由其在拉伸試驗之MD方向的25%應力和斷裂點應力為上述範圍,基材膜之剛性係成為適當者,例如能夠使半導體加工板片的擴展性成為充分者,另一方面,成為具有優異的操作性且搬運時具有優異的被黏著物支撐性者。 In the base film of this embodiment, since the 25% stress and the breaking point stress in the MD direction of the tensile test are within the above-mentioned ranges, the rigidity of the base film becomes appropriate. For example, the expandability of the semiconductor processing sheet can be improved. The one that is sufficient, on the other hand, the one that has excellent operability and excellent support of the adherend during transportation.

5.基材膜的製造方法 5. Manufacturing method of base film

本實施形態之基材膜,係只要含有氯乙烯系樹脂,而且以預定質量比率含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑 者,其製造方法就沒有特別限定。例如,能夠將氯乙烯系樹脂、己二酸酯系可塑劑及對苯二甲酸酯系可塑劑、較佳為安定劑、其它的添加劑等混合,而且將所得到的混合物進行製膜而得到。 The base film of this embodiment contains vinyl chloride resin and contains adipate plasticizer and terephthalate plasticizer in a predetermined mass ratio. However, the manufacturing method is not particularly limited. For example, it can be obtained by mixing a vinyl chloride resin, an adipate-based plasticizer, and a terephthalate-based plasticizer, preferably a stabilizer, other additives, etc., and forming a film of the resulting mixture .

各成分的混合,通常係藉由機械熔融混煉方法,且能夠使用單軸擠製機、雙軸擠製機、享謝爾混合機、班伯里混煉機、各種揑合機、布拉本德混合機(Brabender mixer)、壓延輥等。此時,各成分的添加順序係沒有特別限制。又,熔融混煉之溫度係能夠從140℃~220℃之中適當地選擇。將所得到的混合物加工成為薄膜狀而能夠得到上述基材膜。薄膜加工係藉由擠製成形、輥成形、壓延成形、吹塑成型等通常的成形加工方法而進行即可。 The mixing of the ingredients is usually done by mechanical melting and kneading, and can use single-shaft extruder, twin-shaft extruder, Henschel mixer, Banbury mixer, various kneaders, brabun Brabender mixer, calender roll, etc. At this time, the order of addition of each component is not particularly limited. In addition, the temperature of melt-kneading can be appropriately selected from 140°C to 220°C. The above-mentioned base film can be obtained by processing the obtained mixture into a film shape. The film processing can be performed by ordinary forming processing methods such as extrusion forming, roll forming, calender forming, and blow molding.

又,製膜的方法,亦可使上述所例示的混合物成為溶液或熔融狀態,藉由壓延輥成形等的塗佈手段來進行塗佈。 In addition, as a method of forming a film, the above-exemplified mixture may be brought into a solution or molten state, and applied by a coating means such as calender roll forming.

上述基材膜,係為了提升與層積在其一面的黏著劑層的密著性之目的,亦能夠依照需要,在一面或兩面藉由氧化法、凹凸化法等而施行表面處理、或底漆處理。作為上述氧化法,例如可舉出電暈放電處理、電漿放電處理、鉻氧化處理(濕式)、火焰處理、熱風處理、臭氧、紫外線照射處理等,又,作為凹凸化法,例如可舉出噴砂處理法、熔射處理法等。 The above-mentioned base film is for the purpose of improving the adhesion with the adhesive layer laminated on one side. It can also be surface treated or bottomed on one or both sides by oxidation, embossing, etc., as required. Paint treatment. As the above-mentioned oxidation method, for example, corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet), flame treatment, hot air treatment, ozone, ultraviolet irradiation treatment, etc. can be mentioned, and as the unevenness method, for example, Sandblasting treatment method, spray treatment method, etc.

又,在上述基材膜之未層積黏著劑層之側的面,亦可使用剝離劑而進行剝離處理。藉此,即便不使用剝離膜而使半導體加板片成為捲取物時,亦能夠良好地進行捲出。 In addition, the surface of the base film on the side where the adhesive layer is not laminated may be peeled off using a release agent. Thereby, even when the semiconductor substrate sheet is made into a winding object without using a release film, it can be wound up well.

[半導體加工板片] [Semiconductor processing plate]

本實施形態之半導體加工板片,其構成係具備上述實施形態之基材膜、及層積在該基材膜的至少一面之黏著劑層。在黏著劑層之與基材膜為相反側的面,亦可層積剝離膜。該剝離膜,係在半導體加工板片的使用時被剝離除去,在那以前係保護黏著劑層。 The semiconductor processing sheet of this embodiment is constituted by the base film of the above-mentioned embodiment and an adhesive layer laminated on at least one surface of the base film. A release film may be laminated on the surface of the adhesive layer on the opposite side to the base film. The peeling film is peeled and removed when the semiconductor processing sheet is used, and protects the adhesive layer before that.

1.黏著劑層 1. Adhesive layer

本實施形態之半導體加工板片,作為構成黏著劑層之黏著劑,係能夠使用以往被使用在半導體加工板片之黏著劑。特別是賦予黏著賦予劑、拾取性提升助劑、抗靜電劑等的添加劑時,由於可塑劑移行而在黏著劑層內部引起相溶性的平衡崩潰,且容易產生黏著力變化和產生殘渣物之不良,依照本實施形態,因為使用含有上述可塑劑之基材膜,所以不必進行重新考慮黏著劑組成,而能夠替換含有鄰苯二甲酸二辛酯(DOP)之先前的氯乙烯系基材。 In the semiconductor processing sheet of this embodiment, as the adhesive constituting the adhesive layer, it is possible to use the adhesive conventionally used in the semiconductor processing sheet. In particular, when adding additives such as adhesion imparting agents, pick-up enhancement aids, antistatic agents, etc., due to the migration of the plasticizer, the balance of compatibility in the adhesive layer is collapsed, and adhesion changes and residues are likely to occur. According to this embodiment, since the base film containing the above-mentioned plasticizer is used, there is no need to reconsider the composition of the adhesive, and the previous vinyl chloride base containing dioctyl phthalate (DOP) can be replaced.

具體而言,構成上述黏著劑層之黏著劑可為非硬化性的黏著劑,亦可為硬化性黏著劑。又,硬化性黏著劑可為硬化前的狀態,亦可為硬化後的狀態。黏著劑層係由多層所構成時,亦可為將非硬化性黏著劑及硬化性黏著劑組合而成者。作為非硬化性的黏著劑,例如可舉出丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑、胺甲酸乙酯系黏著劑、聚酯系黏著劑、聚乙烯基醚系黏著劑、苯氧基系黏著劑、丙烯酸胺甲酸乙酯系黏著劑等。作為硬化性的黏著劑,例如可舉出能量線硬化性黏著劑、熱硬化性黏著劑等。以下,稍微詳細地說明能量線 硬化性黏著劑 Specifically, the adhesive constituting the adhesive layer may be a non-curing adhesive or a curable adhesive. In addition, the curable adhesive may be in the state before or after curing. When the adhesive layer is composed of multiple layers, it may be a combination of a non-hardening adhesive and a hardening adhesive. Examples of non-curing adhesives include acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, and polyvinyl ether adhesives. , Phenoxy-based adhesives, acrylic urethane-based adhesives, etc. Examples of curable adhesives include energy ray curable adhesives and thermosetting adhesives. Below, the energy line is explained in a little detail Hardening adhesive

(1)能量線硬化性黏著主劑 (1) Energy ray hardening adhesive main agent

本實施形態的黏著劑層係由能量線硬化性黏著劑所形成時,作為此種能量線硬化性黏著劑,可為含有能量線硬化性單體及/或寡聚物者,亦可為含有能量線非硬化性聚合物、能量線硬化性單體及/或寡聚物者,亦可為含有能量線硬化性聚合物者,亦可為含有能量線硬化性聚合物、能量線硬化性單體及/或寡聚物者,亦可為含有能量線硬化性聚合物、能量線非硬化性聚合物、能量線硬化性單體及/或寡聚物者。尤其是以含有能量線非硬化性聚合物、能量線硬化性單體及/或寡聚物之能量線硬化性黏著劑為佳,其容易增大能量線硬化前的黏著力且能夠增大與能量線硬化後的黏著力的差。能量線硬化性黏著劑亦可進一步含有交聯劑。又,上述成分之中,能量線硬化性單體及/或寡聚物、以及能量線硬化性聚合物係相當於能量線硬化性成分。 When the adhesive layer of this embodiment is formed of an energy-ray-curable adhesive, such an energy-ray-curable adhesive may contain energy-ray-curable monomers and/or oligomers, or may contain Energy-ray non-curable polymers, energy-ray-curable monomers and/or oligomers may contain energy-ray-curable polymers, energy-ray-curable polymers, energy-ray-curable monomers The substance and/or oligomer may contain an energy ray curable polymer, an energy ray non-curable polymer, an energy ray curable monomer and/or an oligomer. In particular, energy-ray curable adhesives containing energy-ray non-curable polymers, energy-ray-curable monomers and/or oligomers are preferred, which easily increase the adhesive force before energy-ray curing and can increase the Poor adhesion after hardening of the energy line. The energy ray curable adhesive may further contain a crosslinking agent. In addition, among the above-mentioned components, energy-ray-curable monomers and/or oligomers, and energy-beam-curable polymers correspond to energy-beam-curable components.

(1-1)能量線非硬化性聚合物 (1-1) Energy ray non-curable polymer

能量線硬化性黏著劑係含有能量線非硬化性聚合物時,其能量線非硬化性聚合物可在黏著劑層直接含有,而且亦可至少其一部分與交聯劑進行交聯反應而具有交聯結構。作為能量線非硬化性聚合物,例如可舉出丙烯酸系聚合物、苯氧基樹脂、胺甲酸乙酯樹脂、聚酯樹脂、橡膠系樹脂、丙烯酸胺甲酸乙酯樹脂、聚矽氧樹脂等、尤其是以容易控制黏著力之丙烯酸系聚合物為佳。以下,詳細地說明使用丙烯酸系聚合物之情況。 When the energy-ray curable adhesive contains an energy-ray non-curable polymer, the energy-ray non-curable polymer may be directly contained in the adhesive layer, and at least a part of it may undergo crosslinking reaction with the crosslinking agent to have crosslinking Joint structure. Examples of the energy-ray non-curable polymer include acrylic polymers, phenoxy resins, urethane resins, polyester resins, rubber resins, acrylic urethane resins, silicone resins, etc. Especially the acrylic polymer which is easy to control the adhesive force is preferred. Hereinafter, the case of using an acrylic polymer is explained in detail.

作為丙烯酸系聚合物,能夠使用先前習知的丙烯 酸系聚合物。丙烯酸系聚合物可為由1種類的丙烯酸系單體所形成的同元聚合物,亦可為由複數種類的丙烯酸系單體所形成的共聚物,亦可以由1種類或複數種類的丙烯酸系單體與丙烯酸系單體以外的單體所形成之共聚物。當作丙烯酸系單體的化合物之具體的種類係沒有特別限定,可舉出(甲基)丙烯酸、(甲基)丙烯酸酯、其衍生物(丙烯腈、伊康酸等)作為具體例。又,在本說明書,所謂(甲基)丙烯酸,係意味著丙烯酸及甲基丙烯酸之雙方。其它類似用語亦同樣。又,在本說明書之「聚合物」,亦有包含「共聚物」的概念之情形。 As acrylic polymer, previously known propylene can be used Acid-based polymer. The acrylic polymer may be a homopolymer formed from one type of acrylic monomer, or a copolymer formed from plural types of acrylic monomers, or may be composed of one type or plural types of acrylic monomers. A copolymer formed by monomers and monomers other than acrylic monomers. The specific type of the compound used as the acrylic monomer is not particularly limited, and specific examples include (meth)acrylic acid, (meth)acrylate, and derivatives thereof (acrylonitrile, itaconic acid, etc.). In addition, in this specification, the term “(meth)acrylic acid” means both acrylic acid and methacrylic acid. The same goes for other similar terms. In addition, the "polymer" in this specification may also include the concept of "copolymer".

針對(甲基)丙烯酸酯,進一步揭示具體例時,可舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸正戊酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸肉豆蔻酯、(甲基)丙烯酸棕櫚酯、(甲基)丙烯酸硬脂酸酯等具有鏈狀骨架之(甲基)丙烯酸酯;(甲基)丙烯酸環己酯、(甲基)丙烯酸苄酯、(甲基)丙烯酸異莰酯、(甲基)丙烯酸二環戊酯、(甲基)丙烯酸四氫糠酯、丙烯酸醯亞胺酯等具有環狀骨架之(甲基)丙烯酸酯;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、丙烯酸4-羥基丁酯等具有羥基之(甲基)丙烯酸酯;(甲基)丙烯酸環氧丙酯、(甲基)丙烯酸N-甲胺基乙酯等具有羥基以外的反應性官能基之(甲基)丙烯酸酯。又,作為丙烯酸系單體以外的單體,可例示乙烯、降莰烯等的烯烴、乙酸乙烯酯、苯乙烯等。又,丙烯酸系單體為(甲基)丙烯酸烷酯時, 其烷基的碳數係以1~18的範圍為佳。 When further revealing specific examples of (meth)acrylate, methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, ( N-butyl meth)acrylate, n-pentyl (meth)acrylate, n-hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, (meth) N-decyl acrylate, lauryl (meth)acrylate, myristyl (meth)acrylate, palmetyl (meth)acrylate, stearate (meth)acrylate and other (meth)acrylic acids with a chain skeleton Esters; cyclohexyl (meth)acrylate, benzyl (meth)acrylate, isobornyl (meth)acrylate, dicyclopentyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, acrylate (Meth) acrylates with cyclic skeletons such as imine esters; 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl acrylate, etc. (Meth)acrylates; (meth)acrylates having reactive functional groups other than hydroxyl groups, such as glycidyl (meth)acrylate and N-methylaminoethyl (meth)acrylate. In addition, examples of monomers other than acrylic monomers include olefins such as ethylene and norbornene, vinyl acetate, and styrene. In addition, when the acrylic monomer is an alkyl (meth)acrylate, The carbon number of the alkyl group is preferably in the range of 1-18.

在本實施形態之能量線硬化性黏著劑係含有交聯劑時,丙烯酸系聚合物係以具有與交聯劑反應之反應性官能基為佳。反應性官能基的種類係沒有特別限定,基於交聯劑的種類等而適當地決定即可。 When the energy-ray curable adhesive system of this embodiment contains a crosslinking agent, the acrylic polymer system preferably has a reactive functional group that reacts with the crosslinking agent. The type of the reactive functional group is not particularly limited, and may be appropriately determined based on the type of crosslinking agent and the like.

例如,交聯劑為聚異氰酸酯化合物時,作為丙烯酸系聚合物所具有之反應性官能基,可例示羥基、羧基、胺基等。又,交聯劑為環氧系化合物時,作為丙烯酸系聚合物所具有之反應性官能基,可例示羧基、胺基、醯胺基等,交聯劑為鉗合化合物時,作為丙烯酸系聚合物所具有之反應性官能基,可例示羥基、羧基、環氧基等。 For example, when the crosslinking agent is a polyisocyanate compound, examples of the reactive functional group possessed by the acrylic polymer include a hydroxyl group, a carboxyl group, and an amino group. In addition, when the crosslinking agent is an epoxy compound, examples of the reactive functional group possessed by the acrylic polymer include a carboxyl group, an amino group, and an amide group. When the crosslinking agent is a clamping compound, it is used as an acrylic polymer Examples of the reactive functional group possessed by the substance include a hydroxyl group, a carboxyl group, and an epoxy group.

將反應性官能基導入至丙烯酸系聚合物之方法係沒有特別限定,作為一個例子,可舉出使用具有反應性官能基的單體而形成丙烯酸系聚合物,來使聚合物骨架含有基於具有反應性官能基的單體之結構單元之方法。例如將羥基導入至丙烯酸系聚合物時,使用丙烯酸2-羥基乙酯等具有羥基的單體而形成丙烯酸系聚合物即可。又,將羧基導入至丙烯酸系聚合物時,係使用丙烯酸等具有羧基之單體而形成丙烯酸系聚合物即可。 The method of introducing the reactive functional group into the acrylic polymer is not particularly limited. As an example, a monomer having a reactive functional group is used to form an acrylic polymer, and the polymer backbone contains The method of the structural unit of the monomer of the functional group. For example, when introducing a hydroxyl group into an acrylic polymer, a monomer having a hydroxyl group such as 2-hydroxyethyl acrylate may be used to form an acrylic polymer. In addition, when introducing a carboxyl group into an acrylic polymer, a monomer having a carboxyl group such as acrylic acid may be used to form an acrylic polymer.

丙烯酸系聚合物係具有反應性官能基時,在丙烯酸系聚合物全體的質量所佔有之源自具有反應性官能基的單體的構造部分之質量比率,係以1質量%以上為佳,以2質量%以上為特佳。又,該比率係以30質量%以下為佳,以20質量%以下為特佳。藉由上述比例為上述範圍,能夠能夠使交聯 程度成為良好。 When the acrylic polymer has a reactive functional group, the mass ratio of the structural part derived from the monomer having the reactive functional group occupied by the total mass of the acrylic polymer is preferably 1% by mass or more. 2% by mass or more is particularly preferred. In addition, the ratio is preferably 30% by mass or less, and particularly preferably 20% by mass or less. With the above ratio in the above range, crosslinking can be achieved The degree becomes good.

丙烯酸系聚合物,係能夠藉由使用常用的方法將上述各單體共聚合來得到。丙烯酸系聚合物的聚合態樣可為隨機共聚物,亦可為嵌段共聚物。 The acrylic polymer can be obtained by copolymerizing each of the above-mentioned monomers using a common method. The polymerization state of the acrylic polymer may be a random copolymer or a block copolymer.

丙烯酸系聚合物的重量平均分子量(Mw),係以1萬以上為佳,以10萬以上為特佳。又,丙烯酸系聚合物的重量平均分子量,係以200萬以下為佳,以150萬以下為特佳。藉由上述重量平均分子量為上述範圍,在發揮良好的黏著性之同時,能夠良好地確保塗佈時的造膜性。又,在本說明書之重量平均分子量,係使用凝膠滲透層析儀裝置(TOSOH股份公司製、製品名「HLC-8020」)且在下述條件下所測定(GPC測定)的標準聚苯乙烯換算值。 The weight average molecular weight (Mw) of the acrylic polymer is preferably 10,000 or more, and particularly preferably 100,000 or more. In addition, the weight average molecular weight of the acrylic polymer is preferably 2 million or less, and particularly preferably 1.5 million or less. When the above-mentioned weight average molecular weight is in the above-mentioned range, it is possible to ensure good film forming properties during coating while exhibiting good adhesiveness. In addition, the weight average molecular weight in this specification is based on a standard polystyrene conversion measured (GPC measurement) using a gel permeation chromatograph device (manufactured by TOSOH Co., Ltd., product name "HLC-8020") and measured under the following conditions (GPC measurement) value.

<GPC測定條件> <GPC measurement conditions>

.管柱:將「TSK guard column HXL-L」、「TSK gel G2500HXL」、「TSK gel G2000HXL」、「TSK gel G1000HXL」(任一者均為TOSOH股份公司製)依次連結而成者 . Column: "TSK guard column HXL-L", "TSK gel G2500HXL", "TSK gel G2000HXL", "TSK gel G1000HXL" (any of them are manufactured by TOSOH Corporation) are connected in sequence

.管柱溫度:40℃ . Column temperature: 40℃

.展開溶劑:四氫呋喃 . Developing solvent: tetrahydrofuran

.流速:1.0mL/min . Flow rate: 1.0mL/min

.檢測器:差示折射計 . Detector: differential refractometer

.標準試料:聚苯乙烯 . Standard sample: polystyrene

(1-2)能量線硬化性單體及/或寡聚物 (1-2) Energy ray hardenable monomer and/or oligomer

能量線硬化性單體及/或寡聚物(以下稱為「能量線硬化性化合物」),係具有能量線硬化性基,且受到能量線的照射時 進行聚合之化合物,而且分子量比後述的能量線硬化性聚合物更低者。 Energy-ray-curable monomers and/or oligomers (hereinafter referred to as "energy-ray-curable compounds") that have energy-ray-curable groups and are irradiated with energy rays A compound that is polymerized and has a molecular weight lower than that of the energy-ray curable polymer described later.

能量線硬化性化合物所具有之能量線硬化性基,係例如含有能量線硬化性碳-碳雙鍵之基,具體而言,係能夠例示(甲基)丙烯醯基、乙烯基等。 The energy-beam-curable group possessed by the energy-beam-curable compound is, for example, a group containing an energy-beam-curable carbon-carbon double bond. Specifically, (meth)acryloyl and vinyl groups can be exemplified.

能量線硬化性化合物可為單官能,亦可為多官能,以多官能為佳。此時,能量線硬化性化合物係以2官能以上為佳,以3官能以上為特佳,以4官能以上為更佳。又,該能量線硬化性化合物係以15官能以下為佳,以12官能以下為特佳,以10官能以下為特佳。能量線硬化性化合物為如上述的多官能時,容易地藉由紫外性硬化來控制黏著力,而且亦不容易產生起因於體積收縮增加之與基材的密著不良。 The energy ray curable compound may be monofunctional or polyfunctional, preferably polyfunctional. In this case, the energy-beam curable compound is preferably bifunctional or higher, particularly preferably trifunctional or higher, and more preferably tetrafunctional or higher. In addition, the energy ray curable compound preferably has 15 functions or less, particularly preferably 12 functions or less, and particularly preferably 10 functions or less. When the energy ray curable compound is polyfunctional as described above, it is easy to control the adhesive force by ultraviolet curing, and it is not easy to cause poor adhesion to the substrate due to increased volume shrinkage.

作為能量線硬化性化合物的具體例,可舉出三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、新戊四醇三(甲基)丙烯酸酯、新戊四醇四(甲基)丙烯酸酯、二新戊四醇一羥基五(甲基)丙烯酸酯、二新戊四醇六(甲基)丙烯酸酯、二新戊四醇聚(甲基)丙烯酸酯、或1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、二環戊二烯二甲氧基二(甲基)丙烯酸酯、(甲基)丙烯酸異莰酯等含環狀脂肪族骨架的丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、寡聚酯(甲基)丙烯酸酯、胺甲酸乙酯(甲基)丙烯酸酯寡聚物、環氧改性(甲基)丙烯酸酯、聚醚(甲基)丙烯酸酯、伊康酸寡聚物等的丙烯酸酯系化合物。該等能夠單獨1種而使用、亦能夠組合2種以上而使用。 Specific examples of the energy ray curable compound include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, and neopentylerythritol tri(meth)acrylate , Neopentaerythritol tetra (meth) acrylate, Dineopentaerythritol monohydroxy penta (meth) acrylate, Dineopentaerythritol hexa (meth) acrylate, Dineopentaerythritol poly (meth) ) Acrylate, or 1,4-butanediol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate, dicyclopentadiene dimethoxydi(meth)acrylic acid Cyclic aliphatic skeleton-containing acrylates such as esters, isobornyl (meth)acrylate, polyethylene glycol di(meth)acrylate, oligopolyester (meth)acrylate, urethane (meth) ) Acrylate compounds such as acrylate oligomers, epoxy-modified (meth)acrylates, polyether (meth)acrylates, and itaconic acid oligomers. These can be used individually by 1 type, and can also be used in combination of 2 or more types.

能量線硬化性化合物的分子量係以100以上為佳,以300以上為特佳。又,能量線硬化性化合物的分子量,係以30000以下為佳,以10000以下為特佳。藉由能量線硬化性化合物的分子量為上述範圍,在確保造膜性之同時,能夠抑制塗佈乾燥時之材料揮發的影響。 The molecular weight of the energy ray curable compound is preferably 100 or more, particularly preferably 300 or more. In addition, the molecular weight of the energy ray curable compound is preferably 30,000 or less, and particularly preferably 10,000 or less. When the molecular weight of the energy ray curable compound is in the above range, it is possible to suppress the influence of material volatilization during coating and drying while ensuring film forming properties.

相對於能量線非硬化性聚合物及硬化性聚合物的合計100質量份,能量線硬化性化合物的比率,係以30質量份以上為佳,以40質量份以上為特佳,以50質量份以上為更佳。又,該比率係以200質量份以下為佳,以170質量份以下為特佳,以150質量份以下為特佳。藉由上述比例為上述範圍,在硬化前能夠發揮良好的黏著力,而且在硬化後,黏著力能夠充分地降低。 The ratio of the energy ray curable compound relative to the total of 100 parts by mass of the energy ray non-curable polymer and the curable polymer is preferably 30 parts by mass or more, particularly preferably 40 parts by mass or more, and 50 parts by mass The above is better. In addition, the ratio is preferably 200 parts by mass or less, particularly preferably 170 parts by mass or less, and particularly preferably 150 parts by mass or less. When the above ratio is in the above range, a good adhesive force can be exerted before curing, and after curing, the adhesive force can be sufficiently reduced.

(1-3)能量線硬化性聚合物 (1-3) Energy ray curable polymer

能量線硬化性聚合物,係以導入能量線硬化性基而成之聚合物為佳。導入該能量線硬化性基而成之聚合物,可在黏著劑層直接含有,而且亦可至少其一部分與交聯劑進行交聯反應而具有交聯結構。 The energy-ray curable polymer is preferably a polymer formed by introducing energy-ray curable groups. The polymer into which the energy ray curable group is introduced may be directly contained in the adhesive layer, and at least a part thereof may undergo a crosslinking reaction with a crosslinking agent to have a crosslinked structure.

作為導入能量線硬化性基而成之聚合物,例如可舉出能夠藉由使含有官能基之含官能基的單體作為單體單元而含有之含官能基的丙烯酸系聚合物、和具有與該官能基反應的取代基及能量線硬化性碳-碳雙鍵之含硬化性基的化合物反應而得到之丙烯酸系聚合物。 Examples of polymers in which energy-ray curable groups are introduced include functional group-containing acrylic polymers that can be contained by using functional group-containing monomers as monomer units as monomer units, and those having and An acrylic polymer obtained by reacting the functional group-reacted substituent and the curable group-containing compound of the energy-beam curable carbon-carbon double bond.

含官能基的丙烯酸系聚合物,係以使含有官能基的丙烯酸系單體、與不含有官能基的丙烯酸系單體、及依照需 要之丙烯酸系單體以外的單體共聚合而成者為佳。亦即,上述含官能基的單體係以含有官能基的丙烯酸系單體為佳。 The functional group-containing acrylic polymer is based on the functional group-containing acrylic monomer, and the functional group-free acrylic monomer, and as required It is preferable to copolymerize monomers other than acrylic monomers. That is, the above-mentioned functional group-containing single system is preferably a functional group-containing acrylic monomer.

作為含有官能基之丙烯酸系單體的官能基(含官能基的單體之官能基),係選擇能夠與上述含硬化性基的化合物所具有之取代基反應者。作為此種官能基,例如可舉出羥基、羧基、胺基、取代胺基、環氧基等。又,在本實施形態之能量線硬化性黏著劑係含有交聯劑時,含官能基的丙烯酸系聚合物,係以將具有與交聯劑反應的官能基之含官能基的單體作為構成成分而含有為佳,該含官能基的單體,亦可兼作具有能夠與上述含硬化性基的化合物所具有的取代基反應的官能基之含官能基的單體。 As the functional group of the functional group-containing acrylic monomer (functional group of the functional group-containing monomer), one that can react with the substituent of the curable group-containing compound is selected. As such a functional group, a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, an epoxy group, etc. are mentioned, for example. In addition, when the energy-ray curable adhesive of this embodiment contains a crosslinking agent, the functional group-containing acrylic polymer is composed of a functional group-containing monomer having a functional group that reacts with the crosslinking agent It is preferable to contain it as a component, and the functional group-containing monomer may also serve as a functional group-containing monomer having a functional group capable of reacting with the substituent of the curable group-containing compound.

不含有官能基的丙烯酸系單體,係以含有(甲基)丙烯酸烷酯單體為佳。作為(甲基)丙烯酸烷酯單體,例如可舉出(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸正戊酯、(甲基)丙烯酸正己酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正癸酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸肉豆蔻酯、(甲基)丙烯酸棕櫚酯、(甲基)丙烯酸硬脂酸酯等。(甲基)丙烯酸烷酯單體之中,烷基的碳數係以1~18為佳,以碳數為1~8為特佳。該等可單獨使用1種類,亦可組合2種以上而使用。 The acrylic monomer which does not contain a functional group is preferably an alkyl (meth)acrylate monomer. Examples of alkyl (meth)acrylate monomers include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, n-butyl (meth)acrylate, Base) n-pentyl acrylate, n-hexyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-decyl (meth)acrylate, (meth)acrylic acid Lauryl ester, myristyl (meth)acrylate, palmityl (meth)acrylate, stearate (meth)acrylate, etc. Among the alkyl (meth)acrylate monomers, the carbon number of the alkyl group is preferably 1 to 18, and the carbon number is particularly preferably 1 to 8. These may be used individually by 1 type, and may be used in combination of 2 or more types.

不含有官能基的丙烯酸系單體,係除了上述(甲基)丙烯酸烷酯單體以外,例如亦可含有(甲基)丙烯酸甲氧基甲酯、(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基甲酯、(甲基)丙烯酸乙氧基乙酯等含烷氧基烷基的(甲基)丙烯酸酯、(甲 基)丙烯酸苯酯等具有芳香族環的(甲基)丙烯酸酯、丙烯醯胺、甲基丙烯醯胺等非交聯性丙烯醯胺、(甲基)丙烯酸N,N-二甲胺基乙酯、(甲基)丙烯酸N,N-二甲胺基丙酯等具有非交聯性3級胺基的(甲基)丙烯酸酯等。 Acrylic monomers that do not contain functional groups, in addition to the above alkyl (meth)acrylate monomers, for example, methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, (Meth) ethoxy methyl acrylate, (meth) ethoxy ethyl acrylate and other (meth) acrylates containing alkoxy alkyl groups, (meth) (Meth)acrylates with aromatic rings such as phenyl acrylate, non-crosslinkable acrylamides such as acrylamide, methacrylamide, and (meth)acrylic acid N,N-dimethylaminoethyl (Meth)acrylates having non-crosslinkable tertiary amino groups such as N,N-dimethylaminopropyl (meth)acrylate and the like.

作為丙烯酸系單體以外的單體,例如可舉出乙烯、降莰烯等的烯烴、乙酸乙烯酯、苯乙烯等。 Examples of monomers other than acrylic monomers include olefins such as ethylene and norbornene, vinyl acetate, and styrene.

在含官能基的丙烯酸系聚合物,其源自含官能基的單體的構造部分在含官能基的丙烯酸系聚合物全體的質量所佔有的質量之比率,係以0.1質量%以上為佳,以1質量%以上為特佳,以3質量%以上為更佳。又,該比率係以50質量%以下為佳,以40質量%以下為特佳,以30質量%以下為更佳。藉此,能夠藉由含硬化性基的化合物的硬化性基之導入量(及與交聯劑的反應量)調整成為所需要的量,且能夠將所得到的黏著劑層之交聯程度控制在較佳範圍。 In the functional group-containing acrylic polymer, the mass ratio of the structural part derived from the functional group-containing monomer to the total mass of the functional group-containing acrylic polymer is preferably 0.1% by mass or more. 1% by mass or more is particularly preferable, and 3% by mass or more is more preferable. In addition, the ratio is preferably 50% by mass or less, particularly preferably 40% by mass or less, and more preferably 30% by mass or less. Thereby, the introduction amount of the curable group of the curable group-containing compound (and the amount of reaction with the crosslinking agent) can be adjusted to the required amount, and the degree of crosslinking of the resulting adhesive layer can be controlled In the preferred range.

含官能基的丙烯酸系聚合物,係能夠將上述各單體藉由常用的方法進行共聚合來得到。含官能基的丙烯酸系聚合物之聚合態樣,可為隨機共聚物,亦可為嵌段共聚物。 The functional group-containing acrylic polymer can be obtained by copolymerizing the above-mentioned monomers by a common method. The polymerization state of the functional group-containing acrylic polymer may be a random copolymer or a block copolymer.

含硬化性基的化合物,係具有與含官能基的丙烯酸系聚合物所具有的官能基反應之取代基及能量線硬化性碳-碳雙鍵。作為與含官能基的丙烯酸系聚合物所具有的官能基反應之取代基,例如可舉出異氰酸酯基、環氧基、羧基等,尤其是與羥基反應性較較高的異氰酸酯基為佳。 The curable group-containing compound has a substituent that reacts with the functional group of the functional group-containing acrylic polymer and an energy ray-curable carbon-carbon double bond. Examples of the substituent that reacts with the functional group of the functional group-containing acrylic polymer include an isocyanate group, an epoxy group, and a carboxyl group. In particular, an isocyanate group having relatively high reactivity with a hydroxyl group is preferable.

含硬化性基的化合物,係以在含硬化性基的化合物的每1分子含有1~5個能量線硬化性碳-碳雙鍵為佳,特別 是含有1~3個為佳。 The compound containing a sclerosing group preferably contains 1 to 5 energy ray-curable carbon-carbon double bonds per molecule of the compound containing the sclerosing group. It is better to contain 1~3.

作為此種含硬化性基的化合物,例如可舉出2-甲基丙烯醯氧基乙基異氰酸酯、間異丙烯基-α,α-二甲基苄基異氰酸酯、甲基丙烯醯基異氰酸酯、烯丙基異氰酸酯、1,1-(雙丙烯醯氧基甲基)乙基異氰酸酯;藉由二異氰酸酯化合物或聚異氰酸酯化合物、與(甲基)丙烯酸羥基乙酯的反應而得到之丙烯醯基一異氰酸酯化合物;藉由二異氰酸酯化合物或聚異氰酸酯化合物與多元醇化合物與(甲基)丙烯酸羥基乙酯的反應而得到之丙烯醯基一異氰酸酯化合物等。含硬化性基的化合物係能夠單獨1種而使用、亦能夠組合2種以上而使用。 As such a curable group-containing compound, for example, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl isocyanate, methacryloyl isocyanate, alkene Propyl isocyanate, 1,1-(bisacryloxymethyl) ethyl isocyanate; acryl monoisocyanate obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth)acrylate Compound; Acrylic monoisocyanate compound obtained by the reaction of diisocyanate compound or polyisocyanate compound and polyol compound with hydroxyethyl (meth)acrylate. The curable group-containing compound can be used individually by 1 type, and can also be used in combination of 2 or more types.

導入能量線硬化性基之聚合物,源自含硬化性基的化合物之硬化性基係相對於該聚合物所具有之官能基(與含硬化性基的化合物的取代基反應之官能基),以含有20莫耳%以上為佳,以含有35莫耳%以上為特佳,以含有50莫耳%以上為更佳。又,以含有120莫耳%以下為佳,以含有100莫耳%以下為特佳。又,含硬化性基的化合物為一官能時,其上限為100莫耳%,但是含硬化性基的化合物為多官能時,有大於100莫耳%之情形。藉由硬化性基對上述官能基的比率為上述範圍內,藉由能量線的照射而得到的黏著力降低性係成為良好者。 The energy-ray-curable group-introduced polymer is derived from the curable group of the curable group-containing compound relative to the functional group of the polymer (functional group that reacts with the substituent of the curable group-containing compound), It is preferably more than 20 mol%, particularly preferably more than 35 mol%, and more preferably more than 50 mol%. Moreover, it is preferable to contain 120 mol% or less, and it is especially preferable to contain 100 mol% or less. In addition, when the curable group-containing compound is monofunctional, the upper limit is 100 mol%, but when the curable group-containing compound is polyfunctional, it may be more than 100 mol%. When the ratio of the curable group to the above-mentioned functional group is within the above-mentioned range, the adhesive force reduction property obtained by the irradiation of energy rays becomes good.

導入能量線硬化性基之聚合物的重量平均分子量(Mw),係以10萬以上為佳,以30萬以上為較佳。又,該重量平均分子量係以200萬以下為佳,特別是150萬以下為較佳。藉由上述重量平均分子量為上述範圍,在發揮良好的黏著性之 同時,能夠良好地確保塗佈時的造膜性。 The weight average molecular weight (Mw) of the polymer into which the energy-ray curable group is introduced is preferably 100,000 or more, and more preferably 300,000 or more. In addition, the weight average molecular weight is preferably 2 million or less, and particularly preferably 1.5 million or less. Since the above weight average molecular weight is in the above range, the At the same time, it is possible to ensure good film-forming properties during coating.

(1-4)交聯劑 (1-4) Crosslinking agent

作為交聯劑,能夠使用與前述的丙烯酸系聚合物、導入能量線硬化性基而成之聚合物所具有的官能基具有反應性之多官能性化合物。作為此種多官能性化合物的例子,可舉出聚異氰酸酯化合物、環氧化合物、胺化合物、三聚氰胺化合物、吖環丙烷化合物、肼化合物、醛化合物、

Figure 106103919-A0202-12-0026-2
唑啉化合物、金屬烷氧化物化合物、金屬鉗合物化合物、金屬鹽、銨鹽、反應性酚樹脂等。該等交聯劑可單獨使用1種,亦可併用2種以上。 As the crosslinking agent, a polyfunctional compound having reactivity with the functional group of the aforementioned acrylic polymer and the polymer obtained by introducing the energy ray curable group can be used. Examples of such polyfunctional compounds include polyisocyanate compounds, epoxy compounds, amine compounds, melamine compounds, acrylcyclopropane compounds, hydrazine compounds, aldehyde compounds,
Figure 106103919-A0202-12-0026-2
Oxazoline compounds, metal alkoxide compounds, metal clamp compounds, metal salts, ammonium salts, reactive phenol resins, etc. These crosslinking agents may be used individually by 1 type, and may use 2 or more types together.

作為聚異氰酸酯化合物,例如可舉出甲苯二異氰酸酯、二苯基甲烷二異氰酸酯、二甲苯基二異氰酸酯等的芳香族聚異氰酸酯、六亞甲基二異氰酸酯等的脂肪族聚異氰酸酯、異佛爾酮二異氰酸酯、氫化二苯基甲烷二異氰酸酯等的脂環式聚異氰酸酯等、及該等的縮二脲體、三聚異氰酸酯體、進而與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷、蓖麻油等含低分子活性氫的化合物之反應物亦即加成物等。尤其是從與官能基的反應性之觀點而言,係以三羥甲基丙烷改性的芳香族聚異氰酸酯、特別是三羥甲基丙烷改性甲苯二異氰酸酯為佳。 Examples of the polyisocyanate compound include aromatic polyisocyanates such as toluene diisocyanate, diphenylmethane diisocyanate, and xylyl diisocyanate, aliphatic polyisocyanates such as hexamethylene diisocyanate, and isophorone diisocyanate. Alicyclic polyisocyanates such as isocyanate, hydrogenated diphenylmethane diisocyanate, etc., and these biuret bodies, trimeric isocyanate bodies, and further with ethylene glycol, propylene glycol, neopentyl glycol, and trimethylolpropane , Castor oil and other low-molecular-weight active hydrogen-containing compounds, that is, adducts, etc. In particular, from the viewpoint of reactivity with functional groups, trimethylolpropane-modified aromatic polyisocyanate, particularly trimethylolpropane-modified toluene diisocyanate is preferred.

相對於丙烯酸系聚合物或導入能量線硬化性基之聚合物之官能基,交聯劑含量的下限值,係以0.01當量以上為佳,以0.02當量以上為特佳。又,上限值係以1當量以下為佳,以0.8當量以下為特佳。藉由交聯劑含量為上述範圍,能夠將所得到的黏著劑層的交聯程度控制在較佳範圍。 The lower limit of the content of the crosslinking agent is preferably 0.01 equivalent or more, and particularly preferably 0.02 equivalent or more with respect to the functional group of the acrylic polymer or the polymer into which the energy ray curable group is introduced. In addition, the upper limit is preferably 1 equivalent or less, and particularly preferably 0.8 equivalent or less. When the content of the crosslinking agent is in the above range, the degree of crosslinking of the resulting adhesive layer can be controlled in a preferable range.

(1-5)其它成分 (1-5) Other ingredients

在本實施形態,形成黏著劑層之黏著劑組成物係除了上述成分以外,亦可含有光聚合起始劑、染料、顏料等的著色材料、抗靜電劑、黏著賦予劑、阻燃劑、填料等的各種添加劑。 In this embodiment, in addition to the above-mentioned components, the adhesive composition system forming the adhesive layer may also contain coloring materials such as photopolymerization initiators, dyes, and pigments, antistatic agents, adhesion imparting agents, flame retardants, and fillers. And other additives.

作為光聚合起始劑,可舉出苯偶姻化合物、苯乙酮化合物、醯基氧化膦化合物、二茂鈦化合物、噻吨酮(thioxanthone)化合物、過氧化物化合物等的光起始劑、胺、苯醌等的光敏化劑等,具體而言,可例示1-羥基環己基苯基酮、苯偶姻、苯偶姻甲醚、苯偶姻乙醚、苯偶姻異丙醚、苄基二苯基硫醚、四甲基秋蘭姆一硫醚、偶氮雙丁腈、聯苄(dibenzyl)、聯乙醯、β-氯蒽醌、2,4,6-三甲基苯甲醯基二苯基氧化膦等。該等光聚合起始劑可單獨使用1種,亦可併用2種以上。使用紫外線作為能量線時,藉由調配光聚合起始劑,而能夠減少照射時間、照射量。 Examples of the photopolymerization initiator include photoinitiators such as benzoin compounds, acetophenone compounds, phosphine oxide compounds, titanocene compounds, thioxanthone compounds, and peroxide compounds. Photosensitizers such as amines, benzoquinones, etc., specifically, 1-hydroxycyclohexyl phenyl ketone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl Diphenyl sulfide, tetramethylthiuram monosulfide, azobisbutyronitrile, dibenzyl, diacetin, β-chloroanthraquinone, 2,4,6-trimethylbenzyl Diphenyl phosphine oxide, etc. These photopolymerization initiators may be used individually by 1 type, and may use 2 or more types together. When ultraviolet rays are used as energy rays, by preparing a photopolymerization initiator, the irradiation time and amount can be reduced.

(1-6)能量線的照射 (1-6) Irradiation of energy rays

作為用以使前述的能量線硬化性黏著劑硬化之能量線,可舉出電離放射線、亦即X射線、紫外線、電子射線等。該等之中,以較容易導入照射設備之紫外線為佳。 Examples of the energy rays used to harden the aforementioned energy ray curable adhesive include ionizing radiation, that is, X-rays, ultraviolet rays, and electron rays. Among them, the ultraviolet rays that are easier to introduce into the irradiation equipment are better.

使用紫外線作為電離放射線時,從操作的容易度而言,使用含有波長200~380nm左右的紫外線之近紫外線即可。就光量而言,按照前述的能量線硬化性化合物及能量線硬化性聚合物所具有之能量線硬化性基的種類和黏著劑層厚度而適當地選擇即可,通常50~500mJ/cm2左右,以100~450mJ/cm2為佳,以200~400mJ/cm2為較佳。又,紫外線照度係通常50~500mW/cm2左右,以100~450mW/cm2為佳,以 200~400mW/cm2為較佳。作為紫外線源,係沒有特別限制、例如能夠使用高壓水銀燈、金屬鹵素燈、UV-LED等。 When using ultraviolet rays as ionizing radiation, in terms of ease of handling, it is sufficient to use near ultraviolet rays containing ultraviolet rays with a wavelength of about 200 to 380 nm. As far as the light quantity is concerned, it can be appropriately selected according to the type of energy ray curable group possessed by the aforementioned energy ray curable compound and energy ray curable polymer and the thickness of the adhesive layer, usually around 50~500mJ/cm 2 , 100~450mJ/cm 2 is better, 200~400mJ/cm 2 is better. Further, the intensity of ultraviolet lines are usually 50 ~ 500mW / cm 2 or so, to 100 ~ 450mW / cm 2 preferably, to 200 ~ 400mW / cm 2 is preferred. The ultraviolet source is not particularly limited, and for example, high-pressure mercury lamps, metal halide lamps, UV-LEDs, etc. can be used.

使用電子射線作為電離放射線時,針對其加速電壓,係按照前述的能量線硬化性化合物及能量線硬化性聚合物所具有之能量線硬化性基的種類和黏著劑層厚度而適當地選定即可,通常加速電壓係以10~1000kV左右為佳。又,照射線量係設定在前述的能量線硬化性化合物及能量線硬化性聚合物適當地硬化之範圍即可,通常在10~1000krad的範圍選定。作為電子射線源,係沒有特別限制、例如能夠使用科克羅夫特-瓦耳頓(Cockroft-Walton)型、范德格拉夫(Van de Graaff)型、共振變壓器型、絕緣芯變壓器型、或直線型、高頻高壓電子加速器(dynamitron)型、高頻型等各種電子射線加速器。 When electron beams are used as ionizing radiation, the accelerating voltage can be appropriately selected according to the type of energy-ray-curable group and the thickness of the adhesive layer of the aforementioned energy-ray-curable compound and energy-ray-curable polymer. , Usually the acceleration voltage is around 10~1000kV. In addition, the irradiation dose may be set in a range where the aforementioned energy ray curable compound and energy ray curable polymer are appropriately cured, and it is usually selected in the range of 10 to 1000 krad. The electron beam source is not particularly limited. For example, Cockroft-Walton type, Van de Graaff type, resonance transformer type, insulated core transformer type, or Various electron beam accelerators such as linear type, high-frequency high-voltage electron accelerator (dynamitron) type, and high-frequency type.

(2)黏著劑層的厚度 (2) The thickness of the adhesive layer

在本實施形態之黏著劑層的厚度的下限值,係以1μm以上為佳,以2μm以上為特佳,以3μm以上為更佳。又,在本實施形態之黏著劑層的厚度係以50μm以下為佳,以40μm以下為特佳,以30μm以下為更佳。藉由黏著劑層的厚度為上述範圍,能夠有效地得到、所需要黏著力。又,黏著劑層係由能量線硬化性黏著劑所形成時,黏著劑層的厚度之上限值為上述以下時,上述能量線硬化性黏著劑係容易硬化。 The lower limit of the thickness of the adhesive layer in this embodiment is preferably 1 μm or more, particularly preferably 2 μm or more, and more preferably 3 μm or more. In addition, the thickness of the adhesive layer in this embodiment is preferably 50 μm or less, particularly preferably 40 μm or less, and more preferably 30 μm or less. When the thickness of the adhesive layer is in the above range, the required adhesive force can be effectively obtained. In addition, when the adhesive layer is formed of an energy ray curable adhesive, when the upper limit of the thickness of the adhesive layer is equal to or less than the above, the energy ray curable adhesive is likely to be hardened.

2.剝離膜 2. Peel off the film

剝離膜,係至半導體加工板片被使用為止之期間,保護黏著劑層者且可能不是必要的。剝離膜的構成為任意,可例示薄膜本身對黏著劑層具有剝離性之塑膠膜、及使用剝離劑等將塑 膠膜進行剝離處理而成者。作為塑膠膜的具體例,可舉出聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚萘二甲酸乙二酯等的聚酯膜、及聚丙烯、聚乙烯等的聚烯烴膜。作為剝離劑,能夠使用聚矽氧系、氟系、橡膠系、長鏈烷基系等,該等之中,以廉價且能夠得到穩定的性能之聚矽氧系為佳。針對剝離膜厚度係沒有特別限制,通常20~250μm左右。 The release film is used to protect the adhesive layer and may not be necessary until the semiconductor processing sheet is used. The structure of the release film is arbitrary, and examples of the film itself are plastic films that have releasability from the adhesive layer, and plastic films that use a release agent, etc. It is made by peeling off the film. Specific examples of plastic films include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyamides such as polypropylene and polyethylene. Olefin film. As the release agent, silicone-based, fluorine-based, rubber-based, long-chain alkyl-based, etc. can be used. Among these, silicone-based products that are inexpensive and can obtain stable performance are preferred. The thickness of the release film is not particularly limited, but it is usually about 20 to 250 μm.

3.半導體加工板片的其它例子 3. Other examples of semiconductor processing plates

以上,說明具備基材膜及黏著劑層之半導體加工板片,但是本發明不被該等限定。 Above, the semiconductor processing sheet provided with the base film and the adhesive layer has been described, but the present invention is not limited to these.

例如作為其它實施形態,半導體加工板片亦可在基材膜與黏著劑層之間具備用以使基材膜與黏著劑層之間的密著性提升之底漆層等。又,半導體加工板片亦可為在基材膜與黏著劑層之間具備中間層。作為中間層,例如可舉出對半導體加工板片賦予所需要的彈性和對半導體晶片突起的追隨性之功能者。此種中間層,係例如能夠由含有胺甲酸乙酯丙烯酸酯等之材料所構成。 For example, as another embodiment, a semiconductor processing sheet may be provided with a primer layer or the like between the base film and the adhesive layer to improve the adhesion between the base film and the adhesive layer. In addition, the semiconductor processing sheet may have an intermediate layer between the base film and the adhesive layer. As the intermediate layer, for example, a function of imparting required elasticity to the semiconductor processing sheet and followability to the protrusion of the semiconductor wafer can be cited. Such an intermediate layer can be made of a material containing urethane acrylate or the like, for example.

又,作為其它實施形態,半導體加工板片亦可具備位於最外層之接著劑層。該接著劑層係以藉由加熱等的觸發作用而顯現黏著性為佳。此種接著劑層,係例如能夠使用作為在晶粒接合之接著劑。 In addition, as another embodiment, the semiconductor processing sheet may be provided with an adhesive layer located at the outermost layer. The adhesive layer preferably exhibits adhesion by triggering action such as heating. Such an adhesive layer can be used, for example, as an adhesive for die bonding.

又,作為其它實施形態,半導體加工板片亦可具備位於最外層之保護膜形成薄膜。保護膜形成薄膜,係特別是在藉由被稱為倒裝(Face-Down)方式之封裝法製造半導體裝置時,能夠使用作為用以保護半導體晶片的背面之保護膜。 In addition, as another embodiment, the semiconductor processing sheet may be provided with a protective film forming film located in the outermost layer. The protective film formation film can be used as a protective film for protecting the back surface of a semiconductor chip, especially when manufacturing a semiconductor device by a packaging method called a face-down method.

4.半導體加工板片的製造方法 4. Manufacturing method of semiconductor processing plate

本實施形態之半導體加工板片,係能夠與先前的半導體加工板片同樣地製造。特別是作為由基材及黏著劑層所構成之半導體加工板片的製造方法,係只要能夠將由前述的黏著劑組成物所形成的黏著劑層層積在基材的一面,其詳細方法就沒有特別限定。舉出一個例子時,能夠藉由調製含有構成黏著劑層之黏著劑組成物、及依照需要進一步含有溶劑或分散介質之塗佈液,使用模塗佈器、簾流塗佈器、噴霧塗佈器、狹縫塗佈器、刮刀塗佈器等將該塗佈液塗佈在基材的一面上而形成塗膜,且藉由使該塗膜乾燥來形成黏著劑層。塗佈液係只要能夠進行塗佈,其性狀就沒有特別限定,有將用以形成黏著劑層之成分以溶質的方式含有之情況,而且亦有以分散質的方式含有之情況。 The semiconductor processing sheet of this embodiment can be manufactured in the same manner as the conventional semiconductor processing sheet. Especially as a method of manufacturing a semiconductor processing sheet composed of a substrate and an adhesive layer, as long as the adhesive layer formed of the aforementioned adhesive composition can be laminated on one side of the substrate, there is no detailed method. Specially limited. To give an example, a die coater, curtain coater, spray coating can be used by preparing a coating solution containing an adhesive composition that constitutes the adhesive layer, and if necessary, a solvent or dispersion medium. The coating liquid is applied to one surface of the substrate by a squeegee, a slit coater, a knife coater, etc., to form a coating film, and an adhesive layer is formed by drying the coating film. The properties of the coating liquid are not particularly limited as long as it can be applied. The components used to form the adhesive layer may be contained as a solute or as a disperse.

又,作為半導體加工板片的製造方法之另外一個例子,係將塗佈液塗佈在前述剝離片的剝離面上而形成塗膜,使其乾燥而形成由黏著劑層及剝離片所構成之積層體,將在該積層體的黏著劑層之與剝離片側的面為相反側的面貼附在基材,而得到半導體加工板片與剝離片的積層體。在該積層體之剝離片,係可設作製程材料而剝離,亦可在至貼附在半導體晶片、半導體晶圓等的被黏著物為止之期間保護黏著劑層。 In addition, as another example of the method of manufacturing a semiconductor processing sheet, a coating liquid is applied to the peeling surface of the aforementioned release sheet to form a coating film, which is dried to form an adhesive layer and a release sheet. In the laminate, the surface of the adhesive layer of the laminate on the opposite side to the surface on the release sheet side is attached to the base material to obtain a laminate of the semiconductor processing sheet and the release sheet. The peeling sheet of the laminate can be set as a process material and peeled off, and it can also protect the adhesive layer until it is attached to an adherend such as a semiconductor wafer or a semiconductor wafer.

塗佈液係含有交聯劑時,係藉由改變上述的乾燥條件(溫度、時間等)、或另外設置加熱處理,來使塗膜內的能量線非硬化性聚合物或能量線硬化性聚合物與交聯劑進行交聯反應,而在黏著劑層內以需要的存在密度形成交聯結構即 可。 When the coating liquid contains a cross-linking agent, change the above-mentioned drying conditions (temperature, time, etc.), or heat treatment separately, to make the energy ray non-curable polymer or energy ray curable polymer in the coating film The material and the cross-linking agent undergo cross-linking reaction, and the cross-linked structure is formed in the adhesive layer with the required density. can.

5.半導體加工板片的物性 5. Physical properties of semiconductor processing plates

本實施形態之半導體加工板片的厚度係沒有特別限定,以50μm以上為佳,以80μm以上為特佳。又,該厚度係以200μm以下為佳,以160μm以下為特佳。 The thickness of the semiconductor processing sheet of the present embodiment is not particularly limited, but is preferably 50 μm or more, and particularly preferably 80 μm or more. In addition, the thickness is preferably 200 μm or less, and particularly preferably 160 μm or less.

本實施形態之半導體加工板片對鏡面矽晶圓之黏著力,黏著劑層係由能量線硬化性黏著劑所形成時,能量線照射前的黏著力(以下有稱為「照射前黏著力」之情形)的下限值,係以100mN/25mm以上為佳,以150mN/25mm以上為特佳,以200mN/25mm以上為更佳。藉此,針對貼附有半導體加工板片之被黏著物,能夠防止在作業中產生非計畫中的剝離。又,針對各種材料均能夠發揮良好的密著性且能夠應用在廣泛的被黏著物。另一方面,上述照射前黏著力,其上限值係以20000mN/25mm以下為佳,以18000mN/25mm以下為佳,以16000mN/25mm以下為更佳。藉此,能夠容易地使能量線的照射後之黏著力降低至較佳範圍為止。又,在本說明書之照射前黏著力,係將鏡面矽晶圓設作被黏著物,依據JIS Z0237:2000之180°剝下試驗而測定。 The adhesive force of the semiconductor processing plate to the mirror silicon wafer of this embodiment. When the adhesive layer is formed of an energy ray curable adhesive, the adhesive force before energy ray irradiation (hereinafter referred to as "adhesion before irradiation") The lower limit of the case) is preferably 100mN/25mm or more, particularly preferably 150mN/25mm or more, and more preferably 200mN/25mm or more. As a result, it is possible to prevent unplanned peeling during the operation of the adherend to which the semiconductor processing plate is attached. In addition, it can exhibit good adhesion to various materials and can be applied to a wide range of adherends. On the other hand, the upper limit of the adhesion force before irradiation is preferably 20,000 mN/25mm or less, preferably 18,000 mN/25mm or less, and more preferably 16,000 mN/25mm or less. Thereby, the adhesive force after the irradiation of the energy ray can be easily reduced to a preferable range. In addition, the adhesion force before irradiation in this specification is measured by setting the mirror-surface silicon wafer as the adherend and measuring it in accordance with the 180° peeling test of JIS Z0237:2000.

又,黏著劑層係由能量線硬化性黏著劑所形成時,能量線照射後的黏著力(以下有稱為「照射後黏著力」之情形),其上限值係以800mN/25mm以下為佳,以600mN/25mm以下為特佳,以500mN/25mm以下為更佳。藉此,能夠將被黏著物容易地從半導體加工板片剝離。另一方面,該照射後黏著力的下限值係沒有特別限定,通常以5mN/25mm以上為佳,以 10mN/25mm以上為特佳,以20mN/25mm以上為更佳。又,在本說明書之照射後黏著力,係將鏡面矽晶圓設作被黏著物,依據JIS Z0237:2000之180°剝下試驗而測得的值,具體的測定方法係如後述的試驗例所揭示。 In addition, when the adhesive layer is formed of an energy ray curable adhesive, the adhesive force after energy ray irradiation (hereinafter referred to as "adhesive force after irradiation"), the upper limit is 800mN/25mm or less Best, 600mN/25mm or less is particularly preferred, and 500mN/25mm or less is more preferred. Thereby, the adherend can be easily peeled from the semiconductor processing sheet. On the other hand, the lower limit of the adhesive force after irradiation is not particularly limited, and it is usually 5mN/25mm or more. 10mN/25mm or more is particularly preferable, and 20mN/25mm or more is more preferable. In addition, the adhesion force after irradiation in this specification is the value measured in accordance with the 180° peel test of JIS Z0237:2000 with a mirror surface silicon wafer as the adherend. The specific measurement method is the test example described later Revealed.

本實施形態之半導體加工板片,係在40℃保管7天後所測定的黏著力(A)與在40℃保管14天後所測定的黏著力(B)之比(A)/(B),係以1.0以上為佳。又,該黏著力比(A)/(B)係以1.5以下為佳,以1.2以下為特佳。上述黏著力比(A)/(B)為上述範圍之半導體加工板片,係能夠抑制經時變化。在本實施形態,使用上述可塑劑時,特別是藉由將己二酸酯單體使用作為己二酸酯系可塑劑,能夠容易使上述黏著力比(A)/(B)成為上述範圍。在此,所謂在40℃保管7天及14天之後所測定的黏著力,係黏著劑層由能量線硬化性黏著劑所形成之情況為照射前的黏著力,具體的測定方法係如後述的試驗例所揭示。 The semiconductor processing plate of this embodiment is the ratio (A)/(B) of the adhesive force (A) measured after storage at 40°C for 7 days to the adhesive force (B) measured after storage at 40°C for 14 days , Is preferably 1.0 or more. In addition, the adhesive force ratio (A)/(B) is preferably 1.5 or less, and particularly preferably 1.2 or less. The above-mentioned adhesive force ratio (A)/(B) is a semiconductor processing sheet in the above-mentioned range, which can suppress changes over time. In the present embodiment, when the above-mentioned plasticizer is used, particularly by using an adipate monomer as the adipate-based plasticizer, the above-mentioned adhesive force ratio (A)/(B) can be easily brought into the above-mentioned range. Here, the so-called adhesive force measured after storage at 40°C for 7 days and 14 days is the adhesive force before irradiation when the adhesive layer is formed of an energy-ray curable adhesive. The specific measurement method is as described later The test example revealed.

在本實施形態之半導體加工板片,在拉伸試驗之MD方向的25%應力及斷裂點應力之值,係與前述基材膜之值實質上相同。其理由係因為在半導體加工板片之基材膜以外的層(黏著劑層等)之剛性,相較於基材膜的剛性為充分地較小而能夠忽視。在此,在半導體加工板片之拉伸試驗之MD方向的25%應力及斷裂點應力,係依據JIS K7161-1:2014而測定半導體加工板片的MD方向25%伸長時及斷裂時的力,且除以基材膜的剖面積而得到的值。又,黏著劑層係由能量線硬化性黏著劑所形成時,係設作照射能量線之前所測得的值。 In the semiconductor processing sheet of this embodiment, the values of the 25% stress and the stress at the breaking point in the MD direction of the tensile test are substantially the same as the values of the aforementioned base film. The reason is that the rigidity of the layers (adhesive layer, etc.) other than the base film of the semiconductor processing sheet is sufficiently small compared to the rigidity of the base film and can be ignored. Here, the 25% stress and the stress at the breaking point in the MD direction of the tensile test of the semiconductor processing sheet are measured according to JIS K7161-1:2014 when the semiconductor processing sheet is stretched and broken at 25% in the MD direction , And divided by the cross-sectional area of the base film. In addition, when the adhesive layer is formed of an energy ray curable adhesive, it is set to the value measured before the energy ray is irradiated.

具體而言,本實施形態之半導體加工板片,在拉 伸試驗之MD方向的25%應力的下限值,係以5MPa以上為佳,以7MPa以上為較佳,以9MPa以上為特佳。又,上述MD方向的25%應力的上限值,係以24MPa以下為佳,以20MPa以下為較佳,以16MPa以下為特佳 Specifically, the semiconductor processing plate of this embodiment is The lower limit of the 25% stress in the MD direction of the tensile test is preferably 5 MPa or more, preferably 7 MPa or more, and particularly preferably 9 MPa or more. In addition, the upper limit of the 25% stress in the MD direction is preferably 24 MPa or less, preferably 20 MPa or less, and particularly preferably 16 MPa or less

又,本實施形態的半導體加工板片,在拉伸試驗之斷裂點應力的下限值係以14MPa以上為佳,以18MPa以上為較佳,以22MPa以上為特佳。又,上述斷裂點應力的上限值係以48MPa以下為佳,以44MPa以下為較佳,以38MPa以下為特佳。 In addition, in the semiconductor processing sheet of the present embodiment, the lower limit of the stress at the breaking point in the tensile test is preferably 14 MPa or more, more preferably 18 MPa or more, and particularly preferably 22 MPa or more. In addition, the upper limit of the stress at the breaking point is preferably 48 MPa or less, preferably 44 MPa or less, and particularly preferably 38 MPa or less.

本實施形態的半導體加工板片,係藉由在拉伸試驗之MD方向的25%應力和斷裂點應力為上述範圍,成為擴展性充分者,另一方面,成為具有優異的操作性且搬運時具有優異的被黏著物支撐性者。 The semiconductor processing sheet of the present embodiment has the 25% stress and the breaking point stress in the MD direction of the tensile test within the above-mentioned range, and has sufficient expandability. On the other hand, it has excellent operability and is transportable. Those with excellent support for adherends.

6.半導體加工板片的用途 6. The use of semiconductor processing plates

本實施形態之半導體加工板片,係能夠使用在支撐半導體晶圓、切割時,以及在將經個片化的半導體晶片進行拾取時。 The semiconductor processing sheet of this embodiment can be used for supporting semiconductor wafers, dicing, and picking up individualized semiconductor wafers.

例如,本實施形態之半導體加工板片能夠使用作為切割片。此時,藉由將背面磨削後的半導體晶圓貼附在半導體加工板片,且在半導體加工板片上進行切割,而能夠將該半導體晶圓個片化成為半導體晶片。隨後,能夠將複數個半導體晶片從半導體加工板片各個地拾取。 For example, the semiconductor processing sheet of this embodiment can be used as a dicing sheet. At this time, by attaching the semiconductor wafer after the back surface grinding to the semiconductor processing plate, and dicing on the semiconductor processing plate, the semiconductor wafers can be divided into semiconductor wafers. Subsequently, a plurality of semiconductor wafers can be picked up individually from the semiconductor processing plate.

又,本實施形態之半導體加工板片,係在將半導體晶圓進行背面磨削前進行切割步驟之先切割法、及藉由雷射設置粉碎層之隱形切割(Stealth dicing)法亦能夠使用。在此, 先切割法時,係例如在切割後將背面磨削用黏著板片貼附在晶圓表面,將本實施形態之半導體晶圓加工板片剝離即可。另一方面,隱形切割法時,係例如將背面磨削用黏著板片貼附在半導體晶圓表面後,將本實施形態之半導體晶圓加工用板片貼附在半導體晶圓背面,越過半導體晶圓加工用板片而進行隱形切割後,將半導體晶圓加工用板片剝離即可。 In addition, the semiconductor processing plate of the present embodiment can also be used in a dicing method in which a dicing step is performed before the back side grinding of a semiconductor wafer, and a stealth dicing method in which a crushing layer is provided by a laser. here, In the case of the first dicing method, for example, after dicing, an adhesive sheet for back grinding is attached to the surface of the wafer, and the semiconductor wafer processing sheet of this embodiment can be peeled off. On the other hand, in the case of the stealth dicing method, for example, after attaching an adhesive sheet for back grinding to the surface of a semiconductor wafer, the semiconductor wafer processing sheet of this embodiment is attached to the back surface of the semiconductor wafer, over the semiconductor wafer. After performing stealth dicing of the wafer processing sheet, the wafer processing sheet may be peeled off.

本實施形態之半導體加工板片,亦能夠不使用於切割,而只有使用於將切割後的半導體晶片拾取。此時,能夠使複數個半導體晶片從切割片移動至半導體加工板片之後,將半導體晶片從該半導體加工板片拾取。又,從切割片移動至半導體加工板片,可藉由轉印而進行、或藉由拾取而進行。 The semiconductor processing plate of this embodiment can also be used not for dicing, but only for picking up the diced semiconductor wafer. At this time, after moving a plurality of semiconductor wafers from the dicing sheet to the semiconductor processing sheet, the semiconductor wafers can be picked up from the semiconductor processing sheet. In addition, the movement from the dicing sheet to the semiconductor processing sheet can be carried out by transfer or by picking up.

本實施形態之半導體加工板片,亦能夠使用作為切割.晶粒接合板片。此時,半導體加工板片係以具備前述的接著劑層為佳,而且,在此種接著劑層與前述黏著劑層等之間,係以設置用以抑制添加劑移行至接著劑層之阻障層等為佳。使用該半導體加工板片時,藉由切割時同時將半導體晶圓及接著劑層切斷,且將經個片化的半導體晶片拾取,而能夠得到附著有接著劑之半導體晶片。又,作為在切割.晶粒接合板片的黏著劑層,雖然亦有作為兼作將半導體晶圓等的被黏著物固定之黏著劑、及附著在半導體晶片而具有晶片接合功能的晶片接合用接著劑之黏接著劑層的功能者,但是在本實施形態之上述黏著劑層,係不具有作為此種黏接著劑層之功能。 The semiconductor processing plate of this embodiment can also be used for cutting. Die bonding plates. At this time, the semiconductor processing board is preferably equipped with the aforementioned adhesive layer, and between this adhesive layer and the aforementioned adhesive layer, etc., a barrier is provided to inhibit the migration of additives to the adhesive layer. Layers are better. When the semiconductor processing sheet is used, the semiconductor wafer and the adhesive layer are cut at the same time during dicing, and the individualized semiconductor wafers are picked up, so that the semiconductor wafer with the adhesive attached can be obtained. Also, as cutting. The adhesive layer of the die-bonding board is also used as an adhesive that also serves as an adhesive for fixing adherends such as semiconductor wafers, and an adhesive layer for chip bonding that is attached to the semiconductor wafer and has a chip bonding function However, the above-mentioned adhesive layer in this embodiment does not have the function as such an adhesive layer.

又,本實施形態之半導體加工板片,亦能夠使用作為用以在半導體晶圓形成保護膜之保護膜形成用板片。此 時,半導體加工板片係在最外層進一步具備保護膜形成薄膜,使用此種半導體加工板片(保護膜形成用板片),在切割時,藉由同時將半導體晶圓及保護膜形成薄膜切斷,且將經個片化的半導體晶片拾取,而能夠得到在背面具有保護膜之半導體晶片。 In addition, the semiconductor processing sheet of this embodiment can also be used as a sheet for forming a protective film for forming a protective film on a semiconductor wafer. this When the semiconductor processing sheet is further provided with a protective film forming film on the outermost layer, this semiconductor processing sheet (sheet for forming a protective film) is used to cut the semiconductor wafer and the protective film at the same time. And pick up the sliced semiconductor wafers to obtain a semiconductor wafer with a protective film on the back.

7.半導體加工板片的使用方法 7. How to use semiconductor processing plates

作為本實施形態之半導體加工板片的使用方法之一個例子,係在以下說明將半導體加工板片使用作為切割片之方法。 As an example of the method of using the semiconductor processing sheet of this embodiment, a method of using the semiconductor processing sheet as a dicing sheet will be described below.

在使用本實施形態之半導體加工板片時,將黏著劑層側的面(亦即,與黏著劑層的基材膜為相反側的面)貼附在半導體晶圓。將剝離膜層積在半導體加工板片之黏著劑層側的面時,係將該剝離膜剝離而使黏著劑層側的面露出且將該面貼附在半導體晶圓的貼附面即可。半導體加工板片的周緣部,係通常藉由設置在該部分之黏著劑層,而被貼附在被稱為環狀框之用以搬運和固定在裝置之環狀治具。 When using the semiconductor processing sheet of this embodiment, the surface on the side of the adhesive layer (that is, the surface opposite to the base film of the adhesive layer) is attached to the semiconductor wafer. When laminating the release film on the adhesive layer side surface of the semiconductor processing sheet, peel the release film to expose the adhesive layer side surface and attach the surface to the attaching surface of the semiconductor wafer . The peripheral part of the semiconductor processing plate is usually attached to a ring-shaped jig called a ring frame for conveying and fixing to a device by means of an adhesive layer provided on the part.

其次,實施切割步驟而能夠從半導體晶圓得到複數個晶片。而且,黏著劑層係由能量線硬化性黏著劑所形成時,係切割步驟結束後,從半導體加工板片的基材膜側進行能量線照射,來使黏著劑層的黏著性降低。 Next, by performing a dicing step, a plurality of wafers can be obtained from the semiconductor wafer. Furthermore, when the adhesive layer is formed of an energy-ray curable adhesive, after the cutting step is completed, energy ray irradiation is performed from the substrate film side of the semiconductor processing sheet to reduce the adhesiveness of the adhesive layer.

接著,為了容易將接近配置在半導體加工板片上之複數個晶片拾取,進行將半導體加工板片在平面方向伸長之擴展步驟。該伸長的程度,係考慮被接近配置的晶片應具有的間隔、基材膜的拉伸強度等而適當地設定即可。又,擴展步驟亦可在進行能量線照射之前進行。 Next, in order to easily pick up a plurality of wafers arranged on the semiconductor processing plate in close proximity, an expansion step of extending the semiconductor processing plate in the plane direction is performed. The extent of this elongation may be appropriately set in consideration of the distance between the wafers to be arranged close to, the tensile strength of the base film, and the like. In addition, the expansion step may be performed before the energy ray irradiation.

擴展步驟之後,係進行黏著劑層上的晶片之拾取。拾取係藉由吸引筒夾(collet)等泛用的手段來進行,但是此時為了容易進行拾取,係以使用插銷、針等從半導體加工板片的基材膜側將對象晶片往上推來進行為佳。 After the expansion step, pick up the chip on the adhesive layer. Picking is carried out by general means such as suction collets. However, in order to facilitate picking, pins, needles, etc. are used to push the target wafer up from the substrate film side of the semiconductor processing sheet. It is better to proceed.

本實施形態之半導體加工板片,因為即便使用鄰苯二甲酸烷酯的代替物質作為在基材膜所含有的可塑劑亦顯示充分的柔軟性,所以具有優異的擴展性,且在擴展步驟能夠容易地使晶片間分離,而且能夠容易地將晶片回收。又,因為基材膜係以預定比率含有己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,所以將晶片剝離時,能夠抑制在晶片上產生殘渣物。又,被拾取後的晶片,係供給至搬運步驟等下一個步驟。 The semiconductor processing sheet of this embodiment exhibits sufficient flexibility even if a substitute for alkyl phthalate is used as the plasticizer contained in the base film, so it has excellent expandability and can be used in the expansion step. The wafers are easily separated, and the wafers can be easily recovered. In addition, since the base film system contains the adipate-based plasticizer and the terephthalate-based plasticizer at a predetermined ratio, it is possible to suppress the generation of residues on the wafer when the wafer is peeled off. In addition, the picked up wafers are supplied to the next step such as the transport step.

以上說明的實施形態,係為了容易理解本發明而記載,而不是為了限定本發明而記載。因而,在上述實施形態所揭示的各要素,其宗旨亦包含屬於本發明的技術範圍之全部的設計變更和均等物。 The embodiments described above are described in order to facilitate the understanding of the present invention, and are not described in order to limit the present invention. Therefore, the gist of each element disclosed in the above embodiment also includes all design changes and equivalents belonging to the technical scope of the present invention.

[實施例] [Example]

以下,藉由實施例等而更具體地說明本發明,但是本發明範圍係不被該等實施例等限定。 Hereinafter, the present invention will be explained more specifically with examples and the like, but the scope of the present invention is not limited by these examples and the like.

[實施例1] [Example 1]

(1)氯乙烯樹脂製基材的製造 (1) Manufacturing of vinyl chloride resin base material

將由聚氯乙烯樹脂(Taiyo Vinyl公司製、TH-1000、平均聚合度:1000)100質量份(固體成分換算值;以下相同)、對苯二甲酸酯系可塑劑A(對苯二甲酸二(2-乙基己基)酯、ADEKA公司製、ADK CIZER D-810、分子量:391)10質量份、作為己二 酸酯系可塑劑之己二酸聚酯B1(ADEKA公司製、ADK CIZER PN-7160、平均分子量:800、可塑化效率值:1.00)20質量份及己二酸酯單體C(新日本理化公司製、SANSOCIZER DINA、分子量398)5質量份、作為著色劑之酞花青藍(phthalocyanine blue)系著色劑(大日精化工業公司製、DA EP4610 BLUE)0.13質量份及喹吖酮紅系著色劑(大日精化工業公司製、DA P4121 RED)0.03質量份、作為安定劑之少量的鎂系安定劑所構成之混合物,在180℃使用班伯里混煉機進行混煉。將所得到的混錬物使用壓延輥進行壓延而得到厚度80μm的氯乙烯樹脂製基材。 100 parts by mass of polyvinyl chloride resin (manufactured by Taiyo Vinyl, TH-1000, average degree of polymerization: 1000) (solid content conversion value; the same below), terephthalate plasticizer A (diterephthalate (2-ethylhexyl) ester, manufactured by ADEKA, ADK CIZER D-810, molecular weight: 391) 10 parts by mass, as hexamethylene Adipic acid polyester B1 (manufactured by ADEKA, ADK CIZER PN-7160, average molecular weight: 800, plasticization efficiency value: 1.00) 20 parts by mass of adipic acid ester plasticizer and adipate monomer C (New Japan Company made, SANSOCIZER DINA, molecular weight 398) 5 parts by mass, phthalocyanine blue coloring agent (DA EP4610 BLUE) as a coloring agent, 0.13 parts by mass, and quinacridone red coloring A mixture of 0.03 parts by mass of a magnesium-based stabilizer (manufactured by Dainichi Seiki Kogyo Co., Ltd., DA P4121 RED) and a small amount of magnesium stabilizer as a stabilizer was kneaded at 180°C using a Banbury mixer. The obtained mixture was rolled using a calender roll to obtain a vinyl chloride resin base material having a thickness of 80 μm.

(2)黏著劑的調製 (2) Preparation of adhesive

使丙烯酸2-乙基己酯20質量份、乙酸乙烯酯78質量份、丙烯酸1質量份、甲基丙烯酸2-羥基乙基甲酯1質量份共聚合,而得到作為能量線非硬化性聚合物之丙烯酸系聚合物(重量平均分子量:17萬、玻璃轉移溫度Tg:5℃)。 20 parts by mass of 2-ethylhexyl acrylate, 78 parts by mass of vinyl acetate, 1 part by mass of acrylic acid, and 1 part by mass of 2-hydroxyethyl methyl methacrylate were copolymerized to obtain an energy-ray non-curable polymer The acrylic polymer (weight average molecular weight: 170,000, glass transition temperature Tg: 5°C).

在此,上述丙烯酸系聚合物的玻璃轉移溫度Tg,係使用各構成單體的同元聚合物之Tg及各構成單體的質量比率且依照FOX式而算出的理論值,各構成單體的同元聚合物的玻璃轉移溫度係如以下。 Here, the glass transition temperature Tg of the above-mentioned acrylic polymer is a theoretical value calculated in accordance with the FOX formula using the Tg of the homopolymer of each constituent monomer and the mass ratio of each constituent monomer. The glass transition temperature of the homopolymer is as follows.

丙烯酸2-乙基己酯同元聚合物:-70℃(203K) Homopolymer of 2-ethylhexyl acrylate: -70℃(203K)

乙酸乙烯酯同元聚合物:32℃(305K) Vinyl acetate homopolymer: 32°C (305K)

丙烯酸同元聚合物:103℃(376K) Acrylic acid homopolymer: 103℃(376K)

甲基丙烯酸羥基乙酯同元聚合物:55℃(328K) Homopolymer of hydroxyethyl methacrylate: 55°C (328K)

將上述丙烯酸系聚合物100質量份、作為交聯劑 之含有三羥甲基丙烷改性甲苯二異氰酸酯(TDI-TMP)的組成物(TOSOH公司製、CORONATE L)3.2質量份、脂肪族芳香族共聚合系石油樹脂(軟化點:86℃)7.1質量份、松香系多元醇(分子量:2700(液狀))7.1質量份、作為光聚合起始劑之2,2-二甲氧基-1,2-二苯基乙烷-1-酮(BASF公司製、商品名:IRGACURE 651)5.1質量份、作為能量線硬化性化合物之2官能胺甲酸乙酯丙烯酸酯(重量平均分子量11000)及6官能胺甲酸乙酯丙烯酸酯(重量平均分子量1500)的混合物(混合質量比1:1)63.4質量份混合,使用甲苯稀釋成固體成分濃度為37質量%,且將其作為黏著劑組成物的塗佈液。 100 parts by mass of the above acrylic polymer as a crosslinking agent The composition containing trimethylolpropane-modified toluene diisocyanate (TDI-TMP) (manufactured by TOSOH, CORONATE L) 3.2 parts by mass, aliphatic aromatic copolymerization petroleum resin (softening point: 86°C) 7.1 mass Parts, rosin-based polyol (molecular weight: 2700 (liquid)) 7.1 parts by mass, 2,2-dimethoxy-1,2-diphenylethane-1-one (BASF) as a photopolymerization initiator Product made by the company, trade name: IRGACURE 651) 5.1 parts by mass, difunctional urethane acrylate (weight average molecular weight 11000) and 6-functional urethane acrylate (weight average molecular weight 1500) as energy ray curable compounds The mixture (mixing mass ratio 1:1) 63.4 parts by mass was mixed, diluted with toluene to a solid content concentration of 37% by mass, and this was used as a coating liquid for the adhesive composition.

(3)半導體加工板片的製造 (3) Manufacturing of semiconductor processing plates

藉由將在上述(2)所得到的黏著劑組成物之塗佈液,使用模塗佈機塗佈在厚度38μm的聚對苯二甲酸乙二酯膜之一主面被聚矽氧系剝離劑剝離處理而成的剝離膜(LINTEC公司製、SP-PET381031)的剝離處理面上,使其乾燥而形成厚度10μm之黏著劑層,得到由剝離膜及黏著劑層所構成之積層體。其次,將上述(1)所得到的氯乙烯樹脂製基材(厚度:80μm)的一面進行電暈處理,且將該電暈處理面與上述積層體的黏著劑層側之面進行貼附,而在黏著劑層之與基材為相反側的面層積有剝離膜之狀態下,得到由氯乙烯樹脂製基材及黏著劑層所構成之半導體加工板片。 By applying the coating solution of the adhesive composition obtained in (2) above, using a die coater, it was applied to one of the main surfaces of a polyethylene terephthalate film with a thickness of 38 μm and was peeled off by the silicone The peeling surface of the peeling film (manufactured by LINTEC, SP-PET381031) obtained by the agent peeling treatment was dried to form an adhesive layer with a thickness of 10 μm, and a laminate composed of the peeling film and the adhesive layer was obtained. Next, one side of the vinyl chloride resin substrate (thickness: 80 μm) obtained in the above (1) is corona treated, and the corona treated surface is attached to the surface of the laminate on the side of the adhesive layer. In the state where the release film is laminated on the surface of the adhesive layer opposite to the base material, a semiconductor processing sheet composed of a vinyl chloride resin base material and an adhesive layer is obtained.

[實施例2~4、比較例1~4、參考例1] [Examples 2 to 4, Comparative Examples 1 to 4, Reference Example 1]

除了將可塑劑的種類及調配量如表1顯示變更以外,係與實施例1同樣地進行而得到半導體加工板片。 Except having changed the kind and compounding amount of a plasticizer as shown in Table 1, it carried out similarly to Example 1, and obtained the semiconductor processing board.

又,表1記載的略號等的詳細係如以下。 In addition, the details of the abbreviations and the like described in Table 1 are as follows.

可塑劑A:對苯二甲酸二(2-乙基己基)酯、ADEKA公司製、ADK CIZER D-810、分子量:391 Plasticizer A: bis(2-ethylhexyl) terephthalate, manufactured by ADEKA, ADK CIZER D-810, molecular weight: 391

可塑劑B1:己二酸聚酯、ADEKA公司製、ADK CIZER PN-7160、平均分子量:800、可塑化效率值:1.00 Plasticizer B1: Adipic acid polyester, manufactured by ADEKA, ADK CIZER PN-7160, average molecular weight: 800, plasticization efficiency value: 1.00

可塑劑B2:己二酸聚酯、J-PLUS公司製、D-643、平均分子量:1800、可塑化效率值:1.16 Plasticizer B2: adipic acid polyester, manufactured by J-PLUS, D-643, average molecular weight: 1800, plasticization efficiency value: 1.16

可塑劑C:已二酸異壬酯、新日本理化公司製、SANSOCIZER DINA、分子量:398 Plasticizer C: isononyl adipate, manufactured by New Japan Rika Co., Ltd., SANSOCIZER DINA, molecular weight: 398

[試驗例1]<基材的25%應力的測定> [Test Example 1] <Measurement of 25% stress of base material>

將實施例及比較例所製造的半導體加工板片,以MD方向成為長邊方向之方式,裁斷成為15mm×150mm的長方形,而得到測定用試樣。將所得到的測定用試樣,以抓具之間成為100mm的方式安裝在萬能拉伸試驗機(ORIENTEC公司製、TENSILON RTA-T-2M)且依據JIS K7161-1:2014在23℃相對濕度50%的環境下,以拉伸速度200mm/分鐘進行拉伸試驗。將25mm伸長時所測得的力除以測定用試樣的基材的剖面積,算出基材的25%應力。將結果顯示在表1。 The semiconductor processing plates manufactured in the examples and comparative examples were cut into a rectangle of 15 mm×150 mm so that the MD direction became the longitudinal direction, and a measurement sample was obtained. The obtained measurement sample was mounted on a universal tensile tester (manufactured by ORIENTEC, TENSILON RTA-T-2M) so that the gap between the grippers became 100 mm, and the relative humidity was 23°C according to JIS K7161-1: 2014 Under a 50% environment, the tensile test was performed at a tensile speed of 200 mm/min. The force measured at the time of 25 mm extension is divided by the cross-sectional area of the base material of the measurement sample to calculate the 25% stress of the base material. The results are shown in Table 1.

[試驗例2]<紫外線照射後黏著力的測定> [Test Example 2] <Measurement of Adhesion after UV Irradiation>

將實施例及比較例所製造的半導體加工板片,投入至促進條件下(40℃ 14天)。隨後,將該板片在23℃相對濕度50%的環境下保管24小時後,將各自切斷而得到長度250mm、寬度25mm的黏著力測定板片。使用2kg的滾輪,將所得到的黏著力測定用板片的黏著劑層側貼附在經鏡面處理的鏡面矽晶圓 (直徑6英吋、厚度650μm),而得到由黏著力測定用板片及矽晶圓所構成之積層體。將所得到的積層體在23℃相對濕度50%的環境下保管20分鐘後,照射紫外線(紫外線照射裝置:Adwill(註冊商標)RAD-2000m/12(LINTEC公司製)、230mW/cm2、190mJ/cm2)使黏著劑層硬化且在23℃相對濕度50%的環境下保管10分鐘,而作為評價試樣。 The semiconductor processing plates manufactured in the Examples and Comparative Examples were put under accelerated conditions (40°C for 14 days). Then, after storing the plate in an environment with a relative humidity of 50% at 23° C. for 24 hours, each was cut to obtain an adhesive force measuring plate having a length of 250 mm and a width of 25 mm. Using a 2kg roller, the adhesive layer side of the obtained adhesive force measurement plate was attached to a mirror-finished silicon wafer (diameter 6 inches, thickness 650μm) to obtain a plate for adhesive force measurement And a laminate composed of silicon wafers. The resulting laminate was stored for 20 minutes in an environment with a relative humidity of 50% at 23°C, and then irradiated with ultraviolet light (ultraviolet radiation device: Adwill (registered trademark) RAD-2000m/12 (manufactured by LINTEC), 230mW/cm 2 , 190mJ /cm 2 ) The adhesive layer was cured and stored in an environment with a relative humidity of 50% at 23° C. for 10 minutes, and used as an evaluation sample.

針對評價試樣,係使用萬能型拉伸試驗機(ORIENTEC公司製、TENSILON/UTM-4-100)且依據JIS Z0237:2000在剝離速度300mm/min、剝離角度180°進行180°剝下試驗(將黏著力測定用板片設作被剝下側的構件),且測定照射後黏著力(單位:mN/25mm)。將照射後黏著力的測定結果顯示在表1 For the evaluation sample, a universal tensile testing machine (manufactured by ORIENTEC, TENSILON/UTM-4-100) was used to perform a 180° peeling test at a peeling speed of 300 mm/min and a peeling angle of 180° in accordance with JIS Z0237: 2000 ( The adhesive force measurement plate was set as the member on the side to be peeled off, and the adhesive force after irradiation (unit: mN/25mm) was measured. The results of the adhesion measurement after irradiation are shown in Table 1.

[試驗例3]<殘渣物的評價> [Test Example 3] <Evaluation of Residues>

在試驗例2所進行之照射後黏著力之測定(促進條件:40℃ 14天),確認在將黏著力測定用板片剝離後的部分的矽晶圓表面有無殘渣物。將無法確認殘渣物者評定為「○」,將實用上無問題的範圍能夠確認極輕微的殘渣物者評為「△」,將能夠確認殘渣物者評定為「×」。 In the measurement of the adhesive force after the irradiation performed in Test Example 2 (accelerated condition: 40° C. for 14 days), it was confirmed whether there was any residue on the surface of the silicon wafer after the sheet for adhesive force measurement was peeled off. Those who could not confirm the residues were rated as "○", those who were able to confirm very slight residues within a practically no problem area were rated as "△", and those who were able to confirm the residues were rated as "×".

[試驗例4]<黏著力比的測定> [Test Example 4] <Measurement of Adhesion Ratio>

針對實施例及比較例所製造的半導體加工板片,除了不進行紫外線照射以外,係與試驗例2同樣地進行而測定40℃ 14天促進條件後之紫外線照射前黏著力(B)。又,除了將促進條件設作40℃ 7天且不進行紫外線照射以外,係與試驗例2同樣地進行而測定40℃ 7天促進條件後之紫外線照射前黏著力 (A),從所得到的結果,算出黏著力(A)/(B)。將結果顯示在表1。 For the semiconductor processing sheets manufactured in the Examples and Comparative Examples, the adhesion force (B) before ultraviolet irradiation after the accelerated conditions of 40° C. for 14 days was measured in the same manner as in Test Example 2 except that ultraviolet irradiation was not performed. In addition, except that the acceleration conditions were set to 40°C for 7 days and UV irradiation was not performed, the same procedure as in Test Example 2 was carried out to measure the adhesion force before UV irradiation after the acceleration conditions at 40°C for 7 days. (A), from the obtained results, calculate the adhesive force (A)/(B). The results are shown in Table 1.

Figure 106103919-A0305-02-0043-1
Figure 106103919-A0305-02-0043-1

從表1能夠得知,實施例所製造的半導體加工板片係能夠抑制殘渣物的產生。 It can be seen from Table 1 that the semiconductor processing sheet manufactured in the examples can suppress the generation of residues.

產業上之可利用性 Industrial availability

本發明之半導體加工板片,係例如能夠適合使用在半導體晶圓的加工步驟、特別是具有擴展步驟之加工步驟。 The semiconductor processing sheet of the present invention can be suitably used, for example, in a processing step of a semiconductor wafer, particularly a processing step having an extended step.

Claims (10)

一種半導體加工板片,係具備基材膜、及被層積在前述基材膜的至少一面側的黏著劑層之半導體加工板片,其特徵在於,前述基材膜係含有氯乙烯系樹脂、作為可塑劑之己二酸酯系可塑劑及對苯二甲酸酯系可塑劑,在前述基材膜,前述己二酸酯系可塑劑的含量對前述己二酸酯系可塑劑與前述對苯二甲酸酯系可塑劑的合計含量之質量比率為50~80質量%。 A semiconductor processing sheet comprising a substrate film and an adhesive layer laminated on at least one side of the substrate film, characterized in that the substrate film contains vinyl chloride resin, As plasticizers, adipate-based plasticizers and terephthalate-based plasticizers, the content of the aforementioned adipate-based plasticizer in the aforementioned substrate film is relative to the aforementioned adipate-based plasticizer and the aforementioned pair of plasticizers. The mass ratio of the total content of the phthalate plasticizer is 50 to 80% by mass. 如申請專利範圍第1項所述之半導體加工板片,其中在前述基材膜之依據JIS K7161-1:2014的拉伸試驗之MD方向的25%應力為5~16MPa。 The semiconductor processing plate described in the first item of the scope of patent application, wherein the 25% stress in the MD direction of the aforementioned base film in the tensile test according to JIS K7161-1:2014 is 5-16 MPa. 如申請專利範圍第1項所述之半導體加工板片,其中相對於前述氯乙烯系樹脂100質量份,在前述基材膜之前述可塑劑的合計含量為18~65質量份。 The semiconductor processing sheet according to the first item of the patent application, wherein the total content of the plasticizer in the base film is 18 to 65 parts by mass relative to 100 parts by mass of the vinyl chloride resin. 如申請專利範圍第1項所述之半導體加工板片,其中前述己二酸酯系可塑劑係含有己二酸聚酯。 The semiconductor processing board described in the first item of the patent application, wherein the adipic acid ester plasticizer contains adipic acid polyester. 如申請專利範圍第4項所述之半導體加工板片,其中前述己二酸聚酯的數量平均分子量為400~1500。 As described in item 4 of the scope of patent application, the number average molecular weight of the adipic acid polyester is 400-1500. 如申請專利範圍第1項所述之半導體加工板片,其中前述己二酸酯系可塑劑係含有己二酸酯單體。 The semiconductor processing board described in the first item of the patent application, wherein the adipic acid ester plasticizer contains an adipic acid ester monomer. 如申請專利範圍第6項所述之半導體加工板片,其中前述己二酸酯單體係選自由己二酸二(2-乙基己基)酯、己二酸二異壬酯、己二酸二異癸酯及己二酸二(2-丁氧基乙基)酯所組 成群組之1種或2種以上。 The semiconductor processing plate described in item 6 of the scope of patent application, wherein the aforementioned adipate mono-system is selected from the group consisting of di(2-ethylhexyl) adipate, diisononyl adipate, and adipic acid Diisodecyl ester and bis(2-butoxyethyl) adipate group One or more types in groups. 如申請專利範圍第1項所述之半導體加工板片,其中前述對苯二甲酸酯系可塑劑為對苯二甲酸二(2-乙基己基)酯。 The semiconductor processing plate described in item 1 of the scope of patent application, wherein the aforementioned terephthalate-based plasticizer is bis(2-ethylhexyl) terephthalate. 如申請專利範圍第1項所述之半導體加工板片,其中在前述基材膜,鄰苯二甲酸二(2-乙基己基)酯、鄰苯二甲酸二丁酯、鄰苯二甲酸苄基丁酯及鄰苯二甲酸二異丁酯的含量係任一者均為0.001質量%以下。 The semiconductor processing plate described in the first item of the scope of patent application, wherein in the aforementioned substrate film, bis(2-ethylhexyl) phthalate, dibutyl phthalate, and benzyl phthalate The content of butyl ester and diisobutyl phthalate is either 0.001% by mass or less. 如申請專利範圍第1項所述之半導體加工板片,其中前述黏著劑層係由能量線硬化性黏著劑組成物所形成。 The semiconductor processing board described in the first item of the patent application, wherein the adhesive layer is formed of an energy-ray curable adhesive composition.
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