TWI697022B - Fuse unit, fuse element, protection element, short circuit element, switching element - Google Patents

Fuse unit, fuse element, protection element, short circuit element, switching element Download PDF

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Publication number
TWI697022B
TWI697022B TW104136254A TW104136254A TWI697022B TW I697022 B TWI697022 B TW I697022B TW 104136254 A TW104136254 A TW 104136254A TW 104136254 A TW104136254 A TW 104136254A TW I697022 B TWI697022 B TW I697022B
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metal layer
point metal
melting point
melting
low
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TW104136254A
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Chinese (zh)
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TW201630022A (en
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米田吉弘
木村武雄
佐藤浩二
古内裕治
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日商迪睿合股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00Thermally-actuated switches
    • H01H37/74Switches in which only the opening movement or only the closing movement of a contact is effected by heating or cooling
    • H01H37/76Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/055Fusible members
    • H01H85/08Fusible members characterised by the shape or form of the fusible member
    • H01H85/11Fusible members characterised by the shape or form of the fusible member with applied local area of a metal which, on melting, forms a eutectic with the main material of the fusible member, i.e. M-effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges
    • H01H85/05Component parts thereof
    • H01H85/055Fusible members
    • H01H85/12Two or more separate fusible members in parallel

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Fuses (AREA)
  • Thermistors And Varistors (AREA)

Abstract

本發明提供能進行表面構裝且能同時達成額定之提升與速熔斷性之熔絲單元。 The present invention provides a fuse unit that can be surface-mounted and that can simultaneously achieve rated lift and fast fuse.

熔絲單元,積層有熔點彼此不同之三層以上之金屬層。 In the fuse unit, three or more metal layers with different melting points are stacked.

Description

熔絲單元、熔絲元件、保護元件、短路元件、切換元件 Fuse unit, fuse element, protection element, short circuit element, switching element

本發明係關於構裝於電流路徑上可藉由超過額定之電流流通時之自體發熱或發熱體之發熱而熔斷以遮斷該電流路徑之熔絲單元、特別是速斷性優異之熔絲單元、以及使用該熔絲單元之熔絲元件、保護元件、短路元件、切換元件。 The present invention relates to a fuse unit constructed on a current path that can be fused by self-heating or heating of a heating element when a current exceeding a rated current flows to block the current path, particularly a fuse with excellent quick-breaking properties Unit, and fuse element, protection element, short circuit element, and switching element using the fuse unit.

本申請案係以2014年11月11日在日本提出申請之日本專利申請案號特願2014-229360為基礎主張優先權,參照該申請案將其援用於本申請案。 This application claims priority based on the Japanese Patent Application No. Japanese Patent Application No. 2014-229360 filed in Japan on November 11, 2014, and refers to the application to apply it to this application.

以往,即有使用在超過額定之電流流通時藉由自體發熱而熔斷以遮斷該電流路徑之熔絲單元。作為熔絲單元,多使用例如將焊料封入玻璃管而成之保持具固定型熔絲、或於陶瓷基板表面印刷有Ag電極之晶片熔絲、使銅電極之一部分較細並組裝於塑料盒之螺固或插入型熔絲等。 In the past, there has been used a fuse unit that fuses by self-heating to interrupt the current path when a current exceeding the rated current flows. As the fuse unit, for example, a holder-fixed fuse formed by sealing a solder into a glass tube, or a wafer fuse with Ag electrodes printed on the surface of a ceramic substrate to make a part of the copper electrode thinner and assembled in a plastic box Screw or plug-in fuse, etc.

[先前技術文獻] [Prior Technical Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本特開2011-82064號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-82064

然而,上述已知之熔絲單元,被指出了有無法進行回焊之表面構裝、電流額定低且若因大型化提高額定則速斷性不佳等問題。 However, the above-mentioned known fuse unit has been pointed out that there are problems such as surface mounting where reflow cannot be performed, current rating is low, and if the rating is increased due to enlargement, the quick-breaking property is poor.

又,在假定為回焊構裝用之速斷熔絲元件之場合,為了避免因回焊之熱而熔融,一般就熔斷特性而言對熔絲單元較佳為熔點300℃以上之含鉛高熔點焊料。然而,在RoHS指令等中,含鉛焊料之使用僅被限制性地認可,且一般認為今後無鉛化之要求會越來越高。 In addition, in the case where a quick-blow fuse element for reflow construction is assumed, in order to avoid melting due to the heat of reflow, it is generally preferred that the fuse unit has a high lead content with a melting point of 300° C. or higher in terms of fusing characteristics. Melting point solder. However, in the RoHS directive, etc., the use of lead-containing solders is only limitedly approved, and it is generally believed that the requirements for lead-free will increase in the future.

亦即,作為熔絲單元,被要求要具備能進行回焊之表面構裝且對熔絲元件之構裝性優異、提升額定並能對應大電流、在超過額定之過電流時可迅速遮斷電流路徑之速熔斷性。 That is, as a fuse unit, it is required to have a surface structure that can be reflowed and is excellent in the structure of the fuse element, it is rated and can respond to large currents, and can be quickly interrupted when the rated overcurrent is exceeded Fast fusing of current path.

因此,本發明之目的在於,提供能進行表面構裝且能同時達成額定之提升與速熔斷性之熔絲單元、以及使用該熔絲單元之熔絲元件、保護元件、短路元件、切換元件。 Therefore, an object of the present invention is to provide a fuse unit that can be surface-mounted and can achieve both rated improvement and fast fusing, as well as a fuse element, a protection element, a short-circuit element, and a switching element using the fuse unit.

為了解決上述課題,本發明之熔絲單元,積層有熔點彼此不同之三層以上之金屬層。 In order to solve the above problem, the fuse unit of the present invention has three or more metal layers with different melting points.

又,本發明之熔絲元件,具有積層有熔點彼此不同之三層以上之金屬層之熔絲單元;藉由超過額定之過電流流通使上述熔絲單元熔斷。 In addition, the fuse element of the present invention has a fuse unit in which three or more metal layers having different melting points are stacked; the above-mentioned fuse unit is blown by overcurrent flow exceeding a rating.

又,本發明之保護元件,具有:絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,設於上述絕緣基板上;發熱體引出電極,與上述發熱體電性連接;以及可熔導體,從上述第1電極經由上述發熱體引出電極跨接於上述第2電極而被連接;上述可熔導體,由積層有熔點彼此不同之三層以上之金屬層之熔絲單元構成,藉由上述發熱體之通電發熱而熔融,遮斷上述第1、第2電極間。 Furthermore, the protection element of the present invention includes: an insulating substrate; a heating element formed on or inside the insulating substrate; first and second electrodes provided on the insulating substrate; a heating element extraction electrode, which generates heat Body electrical connection; and a fusible conductor connected from the first electrode to the second electrode via the heating element extraction electrode and connected to the second electrode; the fusible conductor consists of three or more metal layers with different melting points The fuse unit is configured to be melted by the energization of the heating element to block the first and second electrodes.

又,本發明之短路元件,具有:絕緣基板;發熱體,形成於 上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述發熱體電性連接;以及可熔導體,跨接於上述第1、第3電極間;上述可熔導體,由積層有熔點彼此不同之三層以上之金屬層之熔絲單元構成,藉由上述發熱體之通電發熱而熔融,使上述第1、第2電極間短路且遮斷上述第1、第3電極間。 Moreover, the short-circuit element of the present invention has: an insulating substrate; a heating element formed in On the insulating substrate or inside the insulating substrate; the first and second electrodes are provided adjacent to the insulating substrate; the third electrode is provided on the insulating substrate and electrically connected to the heating element; and a fusible conductor, Crossed between the first and third electrodes; the fusible conductor is composed of a fuse unit in which three or more metal layers with different melting points are stacked, and is melted by the heating of the heating element to make the first 1. A short circuit between the second electrodes interrupts the first and third electrodes.

又,本發明之切換元件,具有:絕緣基板;第1、第2發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述第1發熱體電性連接;第1可熔導體,跨接於上述第1、第3電極間;第4電極,設於上述絕緣基板上且與上述第2發熱體電性連接;第5電極,於上述絕緣基板上與上述第4電極相鄰設置;以及第2可熔導體,從上述第2電極經由上述第4電極跨接於上述第5電極;上述第1、第2可熔導體,由積層有熔點彼此不同之三層以上之金屬層之熔絲單元構成;藉由上述第2發熱體之通電發熱使上述第2可熔導體熔融,遮斷上述第2、第5電極間;藉由上述第1發熱體之通電發熱使上述第1可熔導體熔融,使上述第1、第2電極間短路。 Moreover, the switching element of the present invention includes: an insulating substrate; first and second heating elements formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; 3 electrodes, provided on the insulating substrate and electrically connected to the first heating element; a first fusible conductor, spanned between the first and third electrodes; a fourth electrode, provided on the insulating substrate and The second heating element is electrically connected; a fifth electrode is provided adjacent to the fourth electrode on the insulating substrate; and a second fusible conductor is bridged from the second electrode to the fifth electrode via the fourth electrode Electrodes; the first and second fusible conductors are composed of a fuse unit in which three or more metal layers with different melting points are stacked; the second fusible conductor is melted by energization of the second heating element, Interrupting between the second and fifth electrodes; melting the first fusible conductor by the energization of the first heating element to short-circuit the first and second electrodes.

根據本發明,熔絲單元藉由積層高熔點金屬層,即使在回焊等構裝溫度超過低熔點金屬層之熔融溫度之場合,作為熔絲單元亦不至於熔斷。是以,根據本發明,能藉由回焊而以良好效率構裝熔絲單元。 According to the present invention, by stacking the high melting point metal layer, the fuse unit will not be fused as a fuse unit even when the assembly temperature such as reflow exceeds the melting temperature of the low melting point metal layer. Therefore, according to the present invention, the fuse unit can be constructed with good efficiency by reflow.

又,本發明之熔絲單元,係藉由自體發熱或發熱體之發熱而熔融。此時,熔絲單元藉由已熔融之低熔點金屬層侵蝕高熔點金屬層,而 使高熔點金屬層以較自身熔點低之溫度溶解。是以,根據本發明,能將熔絲單元利用低熔點金屬層對高熔點金屬層之侵蝕作用而在短時間予以熔斷。 In addition, the fuse unit of the present invention is melted by self-heating or heat generated by a heating element. At this time, the fuse unit erodes the high melting point metal layer through the melted low melting point metal layer, and The high melting point metal layer is dissolved at a temperature lower than its own melting point. Therefore, according to the present invention, the fuse unit can be fused in a short time by the erosion effect of the low melting point metal layer on the high melting point metal layer.

又,本發明之熔絲單元,由於係於低熔點金屬層積層低電阻之高熔點金屬層而構成,因此能大幅減低導體電阻,相較於相同尺寸之習知晶片熔絲等可使電流額定大幅提升。又,能謀求較具有相同電流額定之習知晶片熔絲更薄型,速熔斷性優異。 In addition, the fuse unit of the present invention is composed of a low-melting-point metal layer and a low-resistance high-melting-point metal layer, so that the conductor resistance can be greatly reduced, and the current can be rated compared to the conventional chip fuses of the same size. Significantly improved. In addition, it can be thinner than the conventional wafer fuse having the same current rating, and has excellent fast blowability.

是以,本發明之熔絲單元,相較於由熔點彼此不同之兩種類金屬之積層可熔導體構成之熔絲單元,可在維持對回焊溫度等高溫環境之耐性與低電阻特性的同時,發揮優異速熔斷性。 Therefore, the fuse unit of the present invention can maintain resistance to high temperature environments such as reflow temperature and low resistance characteristics, compared to a fuse unit composed of laminated fusible conductors of two kinds of metals having different melting points. , Play an excellent fast fusing.

1,10,20,30,40,50,60,70‧‧‧熔絲單元 1,10,20,30,40,50,60,70 ‧‧‧ fuse unit

2‧‧‧高熔點金屬層 2‧‧‧High melting point metal layer

3‧‧‧第1低熔點金屬層 3‧‧‧First low melting point metal layer

4‧‧‧第2低熔點金屬層 4‧‧‧The second low melting point metal layer

80‧‧‧熔絲元件 80‧‧‧Fuse element

81‧‧‧絕緣基板 81‧‧‧Insulated substrate

82‧‧‧第1電極 82‧‧‧First electrode

82a‧‧‧第1外部連接電極 82a‧‧‧The first external connection electrode

83‧‧‧第2電極 83‧‧‧ 2nd electrode

83a‧‧‧第2外部連接電極 83a‧‧‧The second external connection electrode

84‧‧‧接著劑 84‧‧‧ Adhesive

85‧‧‧助焊劑 85‧‧‧flux

86‧‧‧保護層 86‧‧‧Protective layer

87‧‧‧助焊劑片 87‧‧‧flux sheet

88‧‧‧連接材料 88‧‧‧ connection material

89‧‧‧覆蓋構件 89‧‧‧ Covering member

90‧‧‧保護元件 90‧‧‧Protection element

91‧‧‧絕緣基板 91‧‧‧Insulated substrate

92‧‧‧絕緣構件 92‧‧‧Insulation

93‧‧‧發熱體 93‧‧‧Fever

94‧‧‧第1電極 94‧‧‧First electrode

94a‧‧‧第1外部連接電極 94a‧‧‧The first external connection electrode

95‧‧‧第2電極 95‧‧‧ 2nd electrode

95a‧‧‧第2外部連接電極 95a‧‧‧The second external connection electrode

96‧‧‧發熱體引出電極 96‧‧‧Exiting electrode of heating element

97‧‧‧覆蓋構件 97‧‧‧ Covering member

98‧‧‧保護層 98‧‧‧Protective layer

99‧‧‧發熱體電極 99‧‧‧Heating body electrode

99a‧‧‧發熱體供電電極 99a‧‧‧Heating electrode for heating element

100‧‧‧連接材料 100‧‧‧ connection material

101‧‧‧助焊劑片 101‧‧‧flux sheet

102‧‧‧流出防止部 102‧‧‧ Outflow prevention section

104‧‧‧助焊劑 104‧‧‧flux

110‧‧‧短路元件 110‧‧‧Short circuit element

111‧‧‧絕緣基板 111‧‧‧Insulated substrate

112‧‧‧發熱體 112‧‧‧Heating body

113‧‧‧第1電極 113‧‧‧First electrode

113a‧‧‧第1外部連接電極 113a‧‧‧The first external connection electrode

114‧‧‧第2電極 114‧‧‧ 2nd electrode

114a‧‧‧第2外部連接電極 114a‧‧‧The second external connection electrode

115‧‧‧第3電極 115‧‧‧3rd electrode

116‧‧‧覆蓋構件 116‧‧‧covering member

117‧‧‧連接材料 117‧‧‧ connection material

118‧‧‧絕緣構件 118‧‧‧Insulation

119‧‧‧助焊劑 119‧‧‧flux

120‧‧‧發熱體引出電極 120‧‧‧Extraction electrode of heating element

121‧‧‧發熱體電極 121‧‧‧Heating body electrode

121a‧‧‧發熱體供電電極 121a‧‧‧Heating electrode for heating element

122‧‧‧助焊劑片 122‧‧‧flux sheet

123‧‧‧開關 123‧‧‧ switch

124‧‧‧第4電極 124‧‧‧ 4th electrode

125‧‧‧第2熔絲單元 125‧‧‧ 2nd fuse unit

126‧‧‧流出防止部 126‧‧‧ Outflow prevention section

130‧‧‧切換元件 130‧‧‧Switching element

131‧‧‧絕緣基板 131‧‧‧Insulation substrate

132‧‧‧第1發熱體 132‧‧‧The first heating element

133‧‧‧第2發熱體 133‧‧‧The second heating element

134‧‧‧第1電極 134‧‧‧First electrode

134a‧‧‧第1外部連接電極 134a‧‧‧The first external connection electrode

135‧‧‧第2電極 135‧‧‧ 2nd electrode

135a‧‧‧第2外部連接電極 135a‧‧‧Second external connection electrode

136‧‧‧第3電極 136‧‧‧3rd electrode

137‧‧‧第4電極 137‧‧‧ 4th electrode

138‧‧‧第5電極 138‧‧‧ 5th electrode

139‧‧‧覆蓋構件 139‧‧‧covering member

140‧‧‧絕緣構件 140‧‧‧Insulation

141‧‧‧第1發熱體引出電極 141‧‧‧The first heating element extraction electrode

142‧‧‧第1發熱體電極 142‧‧‧The first heating element electrode

142a‧‧‧第1發熱體供電電極 142a‧‧‧The first heating element power supply electrode

143‧‧‧第2發熱體引出電極 143‧‧‧Second heating element extraction electrode

144‧‧‧第2發熱體電極 144‧‧‧ 2nd heating element electrode

144a‧‧‧第2發熱體供電電極 144a‧‧‧Second heating element power supply electrode

145‧‧‧連接材料 145‧‧‧ connection material

146‧‧‧助焊劑片 146‧‧‧flux sheet

147‧‧‧流出防止部 147‧‧‧ Outflow prevention section

150‧‧‧開關 150‧‧‧switch

圖1係顯示本發明之熔絲單元之剖面圖。 FIG. 1 is a cross-sectional view of the fuse unit of the present invention.

圖2係顯示積層有第1低熔點金屬層作為最外層之熔絲單元之剖面圖。 2 is a cross-sectional view of a fuse unit in which a first low-melting-point metal layer is laminated as the outermost layer.

圖3係顯示反覆形成有既定之積層圖案之本發明之其他熔絲單元之剖面圖。 3 is a cross-sectional view of another fuse unit of the present invention formed repeatedly with a predetermined build-up pattern.

圖4係顯示反覆既定之積層圖案且積層有第1低熔點金屬層作為最外層之本發明之其他熔絲單元之剖面圖。 FIG. 4 is a cross-sectional view of another fuse unit of the present invention in which a predetermined build-up pattern is repeated and a first low-melting-point metal layer is stacked as the outermost layer.

圖5係顯示本發明之其他熔絲單元之剖面圖。 5 is a cross-sectional view showing other fuse units of the present invention.

圖6係顯示積層有第2低熔點金屬層作為最外層之其他熔絲單元之剖面圖。 6 is a cross-sectional view of another fuse unit in which a second low-melting-point metal layer is laminated as the outermost layer.

圖7係顯示反覆形成有既定之積層圖案之本發明之其他熔絲單元之剖 面圖。 7 is a cross section of another fuse unit of the present invention repeatedly formed with a predetermined build-up pattern Face map.

圖8係顯示反覆既定之積層圖案且積層有第2低熔點金屬層作為最外層之本發明之其他熔絲單元之剖面圖。 8 is a cross-sectional view of another fuse unit of the present invention that repeats a predetermined build-up pattern and has a second low-melting-point metal layer as the outermost layer.

圖9係顯示適用本發明之熔絲元件之剖面圖。 9 is a cross-sectional view showing a fuse element to which the present invention is applied.

圖10係省略覆蓋構件而顯示適用本發明之熔絲元件之俯視圖。 FIG. 10 is a plan view showing the fuse element to which the present invention is applied, omitting the cover member.

圖11係顯示使片材含浸於塗布於熔絲單元之助焊劑之熔絲元件之剖面圖。 11 is a cross-sectional view of a fuse element in which a sheet is impregnated with flux applied to a fuse unit.

圖12係顯示於熔絲單元塗布有混合有纖維狀物之助焊劑之熔絲元件之剖面圖。 FIG. 12 is a cross-sectional view of a fuse element coated with a flux mixed with fibrous materials on a fuse unit.

圖13係熔絲元件之電路圖,(A)係顯示熔絲單元之熔斷前,(B)係顯示熔絲單元之熔斷後。 13 is a circuit diagram of the fuse element, (A) shows before the fuse unit is blown, (B) shows after the fuse unit is blown.

圖14係顯示適用本發明之熔絲元件之熔絲單元熔斷後之狀態之剖面圖。 14 is a cross-sectional view showing a state of a fuse unit to which the fuse element of the present invention is blown.

圖15係顯示適用本發明之保護元件之圖,(A)係省略覆蓋構件而顯示之俯視圖,(B)係剖面圖。 15 is a diagram showing a protection element to which the present invention is applied, (A) is a plan view showing the cover member omitted, and (B) is a cross-sectional view.

圖16係顯示使片材含浸於塗布於熔絲單元之助焊劑之保護元件之剖面圖。 16 is a cross-sectional view of a protective element in which a sheet is impregnated with flux applied to a fuse unit.

圖17係顯示於熔絲單元塗布有混合有纖維狀物之助焊劑之保護元件之剖面圖。 17 is a cross-sectional view of a protective element coated with flux mixed with fibrous materials on a fuse unit.

圖18係顯示適用本發明之保護元件之電路圖。 FIG. 18 is a circuit diagram showing the protection element to which the present invention is applied.

圖19係顯示熔絲單元熔斷後之狀態之保護元件之圖,(A)係省略覆蓋構件而顯示之俯視圖,(B)係電路圖。 FIG. 19 is a diagram showing the protection element in a state after the fuse unit is blown, (A) is a plan view shown without the cover member, and (B) is a circuit diagram.

圖20係顯示適用本發明之短路元件之圖,(A)係省略覆蓋構件而顯示之俯視圖,(B)係剖面圖。 FIG. 20 is a diagram showing a short-circuit element to which the present invention is applied, (A) is a plan view shown without a cover member, and (B) is a cross-sectional view.

圖21係顯示使片材含浸於塗布於熔絲單元之助焊劑之短路元件之剖面圖。 21 is a cross-sectional view of a short-circuit element in which a sheet is impregnated with flux applied to a fuse unit.

圖22係顯示於熔絲單元塗布有混合有纖維狀物之助焊劑之短路元件之剖面圖。 FIG. 22 is a cross-sectional view of a short-circuit element coated with a flux mixed with fibrous materials on a fuse unit.

圖23係短路元件之電路圖,(A)係顯示開關切斷之狀態,(B)係顯示開關短路之狀態。 Fig. 23 is a circuit diagram of a short-circuit element, (A) shows a state where the switch is cut, and (B) shows a state where the switch is short-circuited.

圖24係顯示已絕緣之第1、第2電極藉由熔融導體而短路之狀態之短路元件之剖面圖。 24 is a cross-sectional view of a short-circuit element showing a state where the insulated first and second electrodes are short-circuited by a molten conductor.

圖25A係將覆蓋構件省略而顯示短路元件之俯視圖。 25A is a plan view showing the short-circuit element with the cover member omitted.

圖25B係短路元件之剖面圖。 25B is a cross-sectional view of a short-circuit element.

圖25C係於短路元件之兩個熔絲單元分別搭載有助焊劑片之剖面圖。 FIG. 25C is a cross-sectional view of the two fuse units of the short-circuit element carrying flux sheets, respectively.

圖25D係使片材含浸於塗布於短路元件之兩個熔絲單元之助焊劑之剖面圖。 FIG. 25D is a cross-sectional view of the sheet impregnated with flux applied to the two fuse units of the short-circuit element.

圖25E係於短路元件之兩個熔絲單元分別塗布有混合有纖維狀物之助焊劑之剖面圖。 FIG. 25E is a cross-sectional view of two fuse units of a short-circuit element coated with flux mixed with fibrous materials.

圖25F係跨短路元件之兩個熔絲單元塗布有混合有纖維狀物之助焊劑之剖面圖。 FIG. 25F is a cross-sectional view of two flux units across a short-circuit element coated with a flux mixed with fibers.

圖26A係省略覆蓋構件而顯示適用本發明之切換元件之俯視圖。 FIG. 26A is a plan view showing a switching element to which the present invention is applied, omitting the cover member.

圖26B係適用本發明之切換元件之剖面圖。 26B is a cross-sectional view of a switching element to which the present invention is applied.

圖27係使片材含浸於塗布於熔絲單元之助焊劑之切換元件之剖面圖。 FIG. 27 is a cross-sectional view of the switching element in which the sheet is impregnated with the flux applied to the fuse unit.

圖28係於熔絲單元塗布有混合有纖維狀物之助焊劑之切換元件之剖面圖。 FIG. 28 is a cross-sectional view of a switching element coated with a flux mixed with fibrous materials on a fuse unit.

圖29係熔絲單元之熔斷前之切換元件之電路圖。 FIG. 29 is a circuit diagram of the switching element before the fuse unit is blown.

圖30係省略覆蓋構件而顯示切換元件中第2熔絲元件先熔融之狀態之俯視圖。 FIG. 30 is a plan view showing a state in which the second fuse element of the switching element is melted first without the cover member.

圖31A係省略覆蓋構件而顯示切換元件之第2、第4、第5電極間藉由連接中之可熔導體之熔斷而被遮斷、絕緣中之第1、第2電極藉由熔融導體而短路之狀態之俯視圖。 FIG. 31A shows that the cover member is omitted and the second, fourth, and fifth electrodes of the switching element are blocked by the fuse of the fusible conductor being connected, and the first and second electrodes of the insulation are being fuse by the molten conductor Top view of short circuit.

圖31B係省略覆蓋構件而顯示切換元件之第2、第4、第5電極間藉由連接中之可熔導體之熔斷而被遮斷、絕緣中之第1、第2電極藉由熔融導體而短路之狀態之俯視圖。 FIG. 31B shows that the cover member is omitted and the second, fourth, and fifth electrodes of the switching element are blocked by the fuse of the fusible conductor being connected, and the first and second electrodes of the insulation are being fuse by the molten conductor Top view of short circuit.

圖32係熔絲單元之熔斷後之切換元件之電路圖。 32 is a circuit diagram of the switching element after the fuse unit is blown.

以下,一面參照圖式,一面詳細地說明適用本發明之熔絲單元、熔絲元件、保護元件、短路元件及切換元件。此外,本發明並非僅限定於以下之實施形態,在不脫離本發明宗旨之範圍內當然能夠進行各種變更。又,圖式僅為示意,各尺寸之比率等有時與實際不同。具體之尺寸等應考慮以下之說明而加以判斷。又,圖式相互之間當然亦包含彼此的尺寸關係或比率不同之部分。 Hereinafter, the fuse unit, the fuse element, the protection element, the short-circuit element, and the switching element to which the present invention is applied will be described in detail while referring to the drawings. In addition, the present invention is not limited to the following embodiments, and of course various changes can be made without departing from the scope of the present invention. In addition, the drawings are only schematics, and the ratios of the dimensions may differ from the actual ones. The specific dimensions should be judged in consideration of the following description. In addition, the drawings also naturally include parts having different dimensional relationships or ratios.

[熔絲單元] [Fuse Unit]

首先,說明適用本發明之熔絲單元。適用本發明之熔絲單元1,係作為後述之熔絲元件、保護元件、短路元件及切換元件之可熔導體使用,藉由 超過額定之電流流通之自體發熱(焦耳熱)而熔斷,或藉由發熱體之發熱而被熔斷。熔絲單元1積層有熔點彼此不同之三層以上之金屬層,例如如圖1所示,具有高熔點金屬層2、熔點低於高熔點金屬層2之第1低熔點金屬層3、以及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,形成為例如矩形板狀。 First, the fuse unit to which the present invention is applied will be explained. The fuse unit 1 to which the present invention is applied is used as a fusible conductor of a fuse element, a protection element, a short-circuit element, and a switching element described later, by The self-heating (Joule heat) that exceeds the rated current flows and is fused, or is fused by the heating of the heating body. The fuse unit 1 has three or more metal layers with different melting points, for example, as shown in FIG. 1, it has a high melting point metal layer 2, a first low melting point metal layer 3 having a melting point lower than the high melting point metal layer 2, and a melting point The second low-melting-point metal layer 4 lower than the first low-melting-point metal layer 3 is formed in, for example, a rectangular plate shape.

高熔點金屬層2,較佳為使用例如Ag、Cu或以Ag或Cu作為主成分之合金,具有將熔絲單元1藉由回焊爐於絕緣基板上進行構裝時亦不會熔融之高熔點。 The high-melting-point metal layer 2 is preferably made of, for example, Ag, Cu, or an alloy containing Ag or Cu as a main component, and has a high temperature that does not melt when the fuse unit 1 is mounted on an insulating substrate by a reflow furnace Melting point.

第1低熔點金屬層3較佳為使用例如Sn或以Sn作為主成分之合金且一般稱為「無鉛焊料」之材料。第1低熔點金屬層3之熔點不一定要高於回焊爐之溫度,亦可在200℃左右熔融。 The first low-melting-point metal layer 3 is preferably a material that uses Sn or an alloy containing Sn as a main component and is generally called "lead-free solder." The melting point of the first low-melting-point metal layer 3 does not have to be higher than the temperature of the reflow furnace, and it may also melt at about 200°C.

第2低熔點金屬層4較佳為使用例如Bi、In或以Bi或In作為主成分之合金。第2低熔點金屬層4之熔點較第1低熔點金屬層3更低,例如在120℃~140℃開始熔融。 The second low-melting-point metal layer 4 is preferably Bi, In, or an alloy containing Bi or In as a main component. The melting point of the second low-melting-point metal layer 4 is lower than that of the first low-melting-point metal layer 3, for example, melting starts at 120°C to 140°C.

熔絲單元1,藉由積層有熔點彼此不同之三層以上之金屬層而形成,而能使熔絲元件、保護元件、短路元件及切換元件對絕緣基板之構裝性優異,且使使用熔絲單元1之各元件對外部電路基板之構裝性提升。又,熔絲單元1能在各元件中實現額定提升與速熔斷性。 The fuse unit 1 is formed by laminating three or more metal layers with different melting points, which can make the fuse element, protection element, short-circuit element, and switching element excellent in the construction of the insulating substrate, Each element of the wire unit 1 improves the structure of the external circuit board. In addition, the fuse unit 1 can achieve rated improvement and fast fusing in each element.

亦即,熔絲單元1藉由具備高熔點金屬層2,而即使在藉由回焊爐等外部熱源而在短時間暴露於第1、第2低熔點金屬層3,4之熔點以上之高熱環境之場合,亦可防止熔斷或變形,防止伴隨初期遮斷、初期短路或額定變動導致之熔斷特性降低。是以,熔絲單元1,能藉由回焊構裝以 良好效率實現熔絲元件等各元件對絕緣基板之構裝、熔絲元件等各元件對外部電路基板之構裝,使構裝性提升。 That is, the fuse unit 1 is provided with the high-melting-point metal layer 2 and is exposed to high heat above the melting point of the first and second low-melting-point metal layers 3, 4 in a short time even by an external heat source such as a reflow furnace In the case of environment, it can also prevent fusing or deformation, and prevent the reduction of fusing characteristics caused by initial interruption, initial short circuit or rating change. Therefore, the fuse unit 1 can be constructed by reflow Good efficiency realizes the construction of the fuse element and other components on the insulating substrate, and the fuse element and other components on the external circuit substrate, so that the structure is improved.

又,熔絲單元1由於積層有低電阻之高熔點金屬層2而構成,因此與習知使用了鉛系高熔點焊料之可熔導體相較,能大幅減低導體電阻,相較於相同尺寸之習知晶片熔絲等,能使電流額定大幅提升。又,能謀求較具有相同電流額定之習知晶片熔絲更薄型,速熔斷性優異。 In addition, since the fuse unit 1 is formed by stacking a high-melting-point metal layer 2 with low resistance, it can greatly reduce the conductor resistance compared to the conventional fusible conductor using lead-based high-melting-point solder, compared to the same size Conventional chip fuses, etc., can greatly increase the current rating. In addition, it can be thinner than the conventional wafer fuse having the same current rating, and has excellent fast blowability.

再者,熔絲單元1,由於積層有熔點低於高熔點金屬層2之第1低熔點金屬層3及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,因此能藉由因過電流所致之自體發熱或發熱體之發熱,從第2低熔點金屬層4之熔點開始熔融,使速熔斷特性提升。例如,在將第2低熔點金屬層4以Sn-Bi系合金或In-Sn系合金等構成之場合,熔絲單元1係從140℃或120℃前後之低溫開始熔融。接著,藉由已熔融之第1,第2低熔點金屬層3,4侵蝕高熔點金屬層2(焊料沖蝕),使高熔點金屬層2以低於熔點之溫度熔融。是以,熔絲單元1能利用第1,第2低熔點金屬層3,4對高熔點金屬層2之侵蝕作用提升速熔斷性。 Furthermore, since the fuse unit 1 has a first low-melting-point metal layer 3 having a melting point lower than the high-melting-point metal layer 2 and a second low-melting-point metal layer 4 having a melting point lower than the first low-melting-point metal layer 3, it can be borrowed The self-heating or the heating of the heating element caused by the overcurrent melts from the melting point of the second low-melting-point metal layer 4, which improves the rapid fusing characteristic. For example, when the second low-melting-point metal layer 4 is composed of a Sn-Bi-based alloy or an In-Sn-based alloy, etc., the fuse unit 1 starts to melt at a low temperature around 140°C or 120°C. Next, by melting the first and second low-melting-point metal layers 3 and 4 to erode the high-melting-point metal layer 2 (solder erosion), the high-melting-point metal layer 2 is melted at a temperature lower than the melting point. Therefore, the fuse unit 1 can utilize the erosive effect of the first and second low-melting-point metal layers 3 and 4 on the high-melting-point metal layer 2 to improve the rapid fusing.

[熔絲單元之積層構造] [Laminated structure of fuse unit]

此處,熔絲單元1較佳為如圖1所示,高熔點金屬層2積層於第1低熔點金屬層3與第2低熔點金屬層4之間。熔絲單元1,藉由熔點不同之兩種類之第1,第2低熔點金屬層3,4夾持高熔點金屬層2,而從第2低熔點金屬層4之較低溫度開始高熔點金屬層2之一面之侵蝕,其次,以第1低熔點金屬層3之溫度從兩面侵蝕高熔點金屬層2。 Here, as shown in FIG. 1, the fuse unit 1 preferably has a high melting point metal layer 2 laminated between the first low melting point metal layer 3 and the second low melting point metal layer 4. The fuse unit 1 sandwiches the high-melting-point metal layer 2 by the first and second low-melting-point metal layers 3 and 4 having different melting points, and the high-melting-point metal starts from the lower temperature of the second low-melting-point metal layer 4 The erosion of one side of the layer 2 is followed by the erosion of the high melting point metal layer 2 from both sides at the temperature of the first low melting point metal layer 3.

藉此,熔絲單元1,能具備對回焊溫度等高溫環境之耐性且 同時使速熔斷特性提升。亦即,在使由熔點為220℃前後之一般無鉛焊料構成之低熔點金屬層與Ag等高熔點金屬層積層之熔絲單元中,若欲具備對回焊溫度等高溫環境之耐性,則必須增厚高熔點金屬層之厚度,因此熔斷時間會變長。 Thereby, the fuse unit 1 can have resistance to high temperature environments such as reflow temperature and At the same time, the fast fusing characteristic is improved. That is, a fuse unit composed of a low-melting-point metal layer and a high-melting-point metal layer such as Ag composed of a general lead-free solder with a melting point of around 220°C must be resistant to high-temperature environments such as reflow temperature. As the thickness of the high melting point metal layer is increased, the fusing time becomes longer.

又,若為了縮短熔絲單元之熔斷時間,而將低熔點金屬層以較廉價之Sn/Bi系之合金形成,則電阻值會變高,無法使額定提升。 In addition, if the low-melting-point metal layer is formed of a cheaper Sn/Bi-based alloy in order to shorten the fuse unit fusing time, the resistance value becomes higher and the rating cannot be improved.

關於此點,熔絲單元1,係於可非常合適地使用Sn或以Sn作為主成分之合金之第1低熔點金屬層3與可非常合適地使用Bi、In或包含Bi或In之合金且熔點低於第1低熔點金屬層3之第2低熔點金屬層4之間積層高熔點金屬層2。藉此,熔絲單元1中,即使高熔點金屬層2具有具備對回焊溫度等高溫環境之耐性之厚度,亦能藉由第1及/或第2低熔點金屬層3,4將高熔點金屬層2從兩面加以侵蝕而能迅速地熔斷。 In this regard, the fuse unit 1 is based on the first low-melting-point metal layer 3 in which Sn or an alloy containing Sn as a main component can be very suitably used, and Bi, In or an alloy containing Bi or In can be very suitably used and A high-melting-point metal layer 2 is stacked between the second low-melting-point metal layer 4 and the second low-melting-point metal layer 4 having a melting point lower than that of the first low-melting-point metal layer 3. In this way, in the fuse unit 1, even if the high-melting-point metal layer 2 has a thickness that is resistant to high-temperature environments such as the reflow temperature, the high-melting point can be reduced by the first and/or second low-melting-point metal layers 3 and 4 The metal layer 2 is eroded from both sides and can be quickly fused.

又,熔絲單元1,藉由具備可非常合適地使用Sn或以Sn作為主成分之合金之第1低熔點金屬層3而能維持低電阻,同時藉由具備可非常合適地使用Bi、In或包含Bi或In之合金且熔點低於第1低熔點金屬層3之第2低熔點金屬層4,而能從低溫開始熔融且提升速熔斷性。 In addition, the fuse unit 1 can maintain a low resistance by including the first low-melting-point metal layer 3 that can use Sn or an alloy containing Sn as a main component, and can also use Bi and In very appropriately by having Or a second low-melting-point metal layer 4 containing an alloy of Bi or In and having a melting point lower than that of the first low-melting-point metal layer 3 can be melted from a low temperature and improve the rapid fusing property.

再者,熔絲單元1藉由於第1低熔點金屬層3與熔點低於第1低熔點金屬層3之第2低熔點金屬層4之間積層高熔點金屬層2,若在熔融過程中高熔點金屬層2之一部分溶解而使第1低熔點金屬層3與第2低熔點金屬層4混合,則第1低熔點金屬層3之熔點下降,熔融速度加速,即能使速熔斷性更加提升。 Furthermore, the fuse unit 1 has a high melting point metal layer 2 between the first low melting point metal layer 3 and the second low melting point metal layer 4 having a melting point lower than that of the first low melting point metal layer 3. When a part of the metal layer 2 is dissolved and the first low-melting-point metal layer 3 and the second low-melting-point metal layer 4 are mixed, the melting point of the first low-melting-point metal layer 3 is lowered, and the melting speed is accelerated, that is, the quick fusing property can be further improved.

又,熔絲單元1,較佳為藉由高熔點金屬層2、第1低熔點 金屬層3及第2低熔點金屬層4而積層有四層以上。此時,熔絲單元1亦可如圖1所示從下層以第1低熔點金屬層3、高熔點金屬層2、第2低熔點金屬層4、高熔點金屬層2之順序積層四層。圖1所示之熔絲單元,藉由一高熔點金屬層2積層於第1,第2低熔點金屬層3,4之間而能迅速地熔斷。 In addition, the fuse unit 1 is preferably composed of a high melting point metal layer 2 and a first low melting point The metal layer 3 and the second low-melting-point metal layer 4 are stacked with four or more layers. At this time, as shown in FIG. 1, the fuse unit 1 may also deposit four layers in the order of the first low melting point metal layer 3, the high melting point metal layer 2, the second low melting point metal layer 4, and the high melting point metal layer 2 from the lower layer. The fuse unit shown in FIG. 1 can be quickly fused by stacking a high-melting-point metal layer 2 between the first and second low-melting-point metal layers 3 and 4.

又,熔絲單元1亦可將最下層之第1低熔點金屬層3作為連接於後述之熔絲元件、保護元件、短路元件、切換元件之各元件之電極上之連接材料使用。亦即,熔絲單元1,亦可藉由第1低熔點金屬層3而連接於各元件之電極。 In addition, the fuse unit 1 may also use the first low-melting-point metal layer 3 as the connecting material for connecting the electrodes of each element of a fuse element, a protection element, a short-circuit element, and a switching element described later. That is, the fuse unit 1 may also be connected to the electrodes of each element through the first low-melting-point metal layer 3.

又,熔絲單元1,藉由將設於一對高熔點金屬層2之間之內層設為第2低熔點金屬層4,將外層設為高熔點金屬層2,而能提升在組裝有熔絲元件等各元件之電氣系統有異常高之電壓被瞬間施加之對雷電突波之耐性(耐脈衝性)。亦即,熔絲單元1,在例如有100A之電流流通數msec之場合前不會熔斷。此點,由於在極短時間流通之大電流流過導體之表層(表皮效果),而熔絲單元1設有作為外層之電阻值低之Ag鍍敷等高熔點金屬層2,因此使因雷電突波而被施加之電流容易流通,能防止因自體發熱所致之熔斷。是以,熔絲單元1相較於習知之焊料合金所構成之熔絲,能大幅提升對雷電突波之耐性。 In addition, the fuse unit 1 can be improved by assembling the inner layer provided between the pair of high melting point metal layers 2 as the second low melting point metal layer 4 and the outer layer as the high melting point metal layer 2. The electrical system of each element, such as a fuse element, has resistance to lightning surges (impulse resistance) when an abnormally high voltage is applied momentarily. That is, the fuse unit 1 does not blow until a current of 100 A flows for a few msec, for example. At this point, since a large current flowing in a very short time flows through the surface layer of the conductor (skin effect), and the fuse unit 1 is provided with a high-melting-point metal layer 2 such as Ag plating having a low resistance value as an outer layer, the lightning is caused by lightning The current applied by the surge easily flows, which can prevent melting due to self-heating. Therefore, the fuse unit 1 can greatly improve the resistance to lightning surges compared to fuses formed by conventional solder alloys.

[製造方法] [Manufacturing method]

熔絲單元1,能藉由使用鍍敷技術於第1,第2低熔點金屬層3,4之表面將高熔點金屬2成膜而製造。熔絲單元1,例如能藉由於長條狀焊料箔之表面施加Ag鍍敷而以良好效率製造,在使用時藉由依據尺寸予以切斷即能容易地使用。 The fuse unit 1 can be manufactured by forming a high-melting-point metal 2 on the surfaces of the first and second low-melting-point metal layers 3 and 4 using a plating technique. The fuse unit 1 can be manufactured with high efficiency by applying Ag plating to the surface of the elongated solder foil, for example, and can be easily used by cutting according to the size during use.

又,熔絲單元1亦可藉由將構成第1,第2低熔點金屬層3,4之低熔點金屬箔與構成高熔點金屬層2之高熔點金屬箔予以貼合來製造。熔絲單元1,例如係於壓延後之兩片Cu箔或Ag箔之間夾持同樣經壓延之構成第2低熔點金屬層4之焊料箔,進而於一高熔點金屬層2積層構成第1低熔點金屬層3之焊料箔並加以緊壓來製造。此情形下,低熔點金屬箔較佳為選擇較高熔點金屬箔軟之材料。藉此,能吸收厚度之不均而使低熔點金屬箔與高熔點金屬箔無間隙地緊貼。又,由於低熔點金屬箔可藉由緊壓使膜厚變薄,因此可先使厚度較厚。在因緊壓使低熔點金屬箔超出熔絲單元端面時,較佳為切離來調整形狀。 In addition, the fuse unit 1 can also be manufactured by laminating the low melting point metal foil constituting the first and second low melting point metal layers 3 and 4 and the high melting point metal foil constituting the high melting point metal layer 2. The fuse unit 1 is, for example, sandwiched between two rolled Cu foils or Ag foils, which are also rolled to form the second low-melting-point metal layer 4 of the solder foil, and then laminated on a high-melting-point metal layer 2 to constitute the first The solder foil of the low-melting-point metal layer 3 is pressed and manufactured. In this case, the low melting point metal foil is preferably a softer material with a higher melting point metal foil. As a result, the uneven thickness can be absorbed and the low-melting-point metal foil and the high-melting-point metal foil can be closely adhered without a gap. In addition, since the low melting point metal foil can be thinned by pressing, the thickness can be made thicker first. When the low melting point metal foil exceeds the end surface of the fuse unit due to the pressing, it is preferable to cut off to adjust the shape.

除此之外,熔絲單元1,藉由蒸鍍等薄膜形成技術或使用其他周知積層技術,亦能形成積層有第1,第2低熔點金屬層3,4與高熔點金屬層2之熔絲單元1。 In addition, the fuse unit 1 can also form a fusion of the first and second low-melting-point metal layers 3 and 4 and the high-melting-point metal layer 2 by thin film forming techniques such as evaporation or other well-known layering techniques.丝单元1。 Silk unit 1.

此外,熔絲單元1,在將一高熔點金屬層2作為最外層時,亦可進一步於該最外層之高熔點金屬層2之表面形成未圖示之氧化防止膜。熔絲單元1,藉由最外層之高熔點金屬層2進一步被氧化防止膜覆蓋,而可在例如形成有Cu鍍敷或Cu箔作為高熔點金屬層2之場合亦能防止Cu之氧化。是以,熔絲單元1,能防止因Cu之氧化導致熔斷時間變長之情事,能在短時間予以熔斷。 In addition, when a high melting point metal layer 2 is used as the outermost layer, the fuse unit 1 may further form an oxidation prevention film (not shown) on the surface of the outermost high melting point metal layer 2. The fuse unit 1 is further covered with an oxidation prevention film by the outermost high-melting-point metal layer 2, and can also prevent the oxidation of Cu even when Cu plating or Cu foil is formed as the high-melting-point metal layer 2. Therefore, the fuse unit 1 can prevent the fusing time from becoming longer due to the oxidation of Cu, and can be fused in a short time.

又,熔絲單元1,能使用Cu等雖廉價但易氧化之金屬作為高熔點金屬層2,而能在不使用Ag等高價材料之情形下形成。 In addition, the fuse unit 1 can use a cheap but easily oxidized metal such as Cu as the high-melting-point metal layer 2 and can be formed without using an expensive material such as Ag.

高熔點金屬之氧化防止膜,能使用與第1,第2低熔點金屬層3,4相同之材料,例如能使用以Sn作為主成分之無鉛焊料。又,氧化防 止膜,能藉由對高熔點金屬層2之表面施加錫鍍敷來形成。除此之外,氧化防止膜亦能藉由Au鍍敷或預助焊劑來形成。 For the oxidation prevention film of the high melting point metal, the same material as the first and second low melting point metal layers 3 and 4 can be used, for example, lead-free solder containing Sn as a main component can be used. Also, oxidation prevention The stop film can be formed by applying tin plating to the surface of the high melting point metal layer 2. In addition, the oxidation prevention film can also be formed by Au plating or pre-flux.

又,適用本發明之熔絲單元,亦可如圖2所示以第1低熔點金屬層3、高熔點金屬層2、第2低熔點金屬層4、高熔點金屬層2之順序積層,並積層第1低熔點金屬層3作為最外層。圖2所示之熔絲單元10,係將設於一對高熔點金屬層2之間之內層設為第2低熔點金屬層4,將外層設為高熔點金屬層2,將最外層設為第1低熔點金屬層3而成者,一對高熔點金屬層2均積層於第1,第2低熔點金屬層3,4之間。 Furthermore, the fuse unit to which the present invention is applied may also be stacked in the order of the first low-melting-point metal layer 3, the high-melting-point metal layer 2, the second low-melting-point metal layer 4, and the high-melting-point metal layer 2 as shown in FIG. 2, and The first low-melting-point metal layer 3 is laminated as the outermost layer. In the fuse unit 10 shown in FIG. 2, the inner layer provided between the pair of high-melting-point metal layers 2 is the second low-melting-point metal layer 4, the outer layer is the high-melting-point metal layer 2, and the outermost layer is provided. The first low-melting-point metal layer 3 is formed, and a pair of high-melting-point metal layers 2 are stacked between the first and second low-melting-point metal layers 3 and 4.

又,適用本發明之熔絲單元,亦可如圖3所示,藉由反覆第1低熔點金屬層3、高熔點金屬層2、第2低熔點金屬層4、高熔點金屬層2之積層圖案來形成。圖3所示之熔絲單元20,藉由反覆該積層圖案,而能在維持速熔斷性之同時謀求熔絲單元之厚度增加所致之低電阻化與抑制回焊時之變形。 In addition, as shown in FIG. 3, the fuse unit to which the present invention is applied can also be laminated by repeatedly stacking the first low-melting-point metal layer 3, the high-melting-point metal layer 2, the second low-melting-point metal layer 4, and the high-melting-point metal layer 2. Pattern to form. The fuse unit 20 shown in FIG. 3 can reduce the resistance due to the increase in the thickness of the fuse unit and suppress the deformation during reflow by maintaining the fast fusing property by repeating the stacked pattern.

亦即,熔絲單元,為了低電阻化而提升額定電流,必須增厚高熔點金屬層或增厚低熔點金屬。若增厚高熔點金屬層,雖除了低電阻化以外,亦能防止回焊時之變形或熔斷,提升對回焊溫度等高溫環境之耐性,但另一方面卻會損及速熔斷性。又,若增厚低熔點金屬層則會使熔蝕加速,損害對高溫環境之耐性。因此,熔絲單元20,可藉由反覆該積層圖案維持速熔斷性,同時確保所欲之厚度謀求低電阻化所致之額定提升,且實現對高溫環境之耐性之提升。此外,熔絲單元20雖係藉由反覆該積層圖案而積層8層者,但適用本發明之熔絲單元,亦可藉由反覆該積層圖案而積層8層以上。 In other words, in order to lower the resistance and increase the rated current, the fuse unit must thicken the high-melting-point metal layer or thicken the low-melting-point metal. If thickening the high melting point metal layer, in addition to lowering the resistance, it can prevent deformation or fusing during reflow, and improve the resistance to high temperature environments such as reflow temperature, but on the other hand, it will damage the fast fusing. In addition, thickening the low-melting-point metal layer will accelerate corrosion and impair the resistance to high-temperature environments. Therefore, the fuse unit 20 can maintain rapid fusing by repeating the build-up pattern, and at the same time ensure the desired thickness to increase the rating due to the reduction in resistance and to improve the resistance to high temperature environments. In addition, although the fuse unit 20 stacks 8 layers by repeating the stacking pattern, the fuse unit of the present invention can also be stacked by stacking 8 or more layers by repeating the stacking pattern.

又,適用本發明之熔絲單元,亦可如圖4所示,反覆第1低熔點金屬層3、高熔點金屬層2、第2低熔點金屬層4、高熔點金屬層2之積層圖案且積層第1低熔點金屬層3作為最外層。圖4所示之熔絲單元30,係藉由反覆該積層圖案而積層8層後,積層第1低熔點金屬層3作為最外層,所有高熔點金屬層2積層於第1,第2低熔點金屬層3,4之間。 In addition, as shown in FIG. 4, the fuse unit of the present invention may be used to repeat the stacked pattern of the first low melting point metal layer 3, the high melting point metal layer 2, the second low melting point metal layer 4, and the high melting point metal layer 2 and The first low-melting-point metal layer 3 is laminated as the outermost layer. The fuse unit 30 shown in FIG. 4 is formed by laminating 8 layers by repeating the lamination pattern, the first low melting point metal layer 3 is laminated as the outermost layer, and all the high melting point metal layers 2 are laminated on the first and second low melting points Between metal layers 3,4.

又,適用本發明之熔絲單元,亦可如圖5所示從下層以第2低熔點金屬層4、高熔點金屬層2、第1低熔點金屬層3、高熔點金屬層2之順序積層四層。圖5所示之熔絲單元40,亦與上述之熔絲單元1同樣地可藉由一高熔點金屬層2積層於第1,第2低熔點金屬層3,4之間而能迅速地熔斷。 In addition, as shown in FIG. 5, the fuse unit of the present invention may be stacked from the lower layer in the order of the second low melting point metal layer 4, the high melting point metal layer 2, the first low melting point metal layer 3, and the high melting point metal layer 2. Four floors. The fuse unit 40 shown in FIG. 5 can be quickly fused by stacking a high melting point metal layer 2 between the first and second low melting point metal layers 3 and 4 in the same manner as the fuse unit 1 described above. .

又,熔絲單元40,亦可將最下層之第2低熔點金屬層4作為連接於後述之熔絲元件、保護元件、短路元件、切換元件之各元件之電極上之連接材料使用。亦即,熔絲單元40,亦可藉由第2低熔點金屬層4而連接於各元件之電極。 In addition, the fuse unit 40 may also use the second lowest melting point metal layer 4 as a connection material connected to the electrodes of each element of a fuse element, a protection element, a short circuit element, and a switching element described later. That is, the fuse unit 40 may also be connected to the electrode of each element through the second low-melting-point metal layer 4.

又,適用本發明之熔絲單元,亦可如圖6所示,以第2低熔點金屬層4、高熔點金屬層2、第1低熔點金屬層3、高熔點金屬層2之順序積層,且積層第2低熔點金屬層4作為最外層。圖6所示之熔絲單元50,係將設於一對高熔點金屬層2之間之內層設為第1低熔點金屬層3,將外層設為高熔點金屬層2,將最外層設為第2低熔點金屬層4而成者,一對高熔點金屬層2均積層於第1,第2低熔點金屬層3,4之間。 Furthermore, as shown in FIG. 6, the fuse unit to which the present invention is applied may be stacked in the order of the second low-melting-point metal layer 4, the high-melting-point metal layer 2, the first low-melting-point metal layer 3, and the high-melting-point metal layer 2. And the second low melting point metal layer 4 is laminated as the outermost layer. In the fuse unit 50 shown in FIG. 6, the inner layer provided between the pair of high melting point metal layers 2 is set as the first low melting point metal layer 3, the outer layer is set as the high melting point metal layer 2, and the outermost layer is set The second low-melting-point metal layer 4 is formed, and a pair of high-melting-point metal layers 2 are stacked between the first and second low-melting-point metal layers 3 and 4.

又,適用本發明之熔絲單元,亦可如圖7所示,藉由反覆第2低熔點金屬層4、高熔點金屬層2、第1低熔點金屬層3、高熔點金屬層2 之積層圖案而形成。圖7所示之熔絲單元60,係藉由反覆該積層圖案,而與上述之熔絲單元20,30同樣地,維持速熔斷性同時謀求因熔絲單元之厚度增加所致之低電阻化與抑制因剛性增加所致之回焊時之變形。此外,熔絲單元60雖係藉由反覆該積層圖案而積層8層者,但適用本發明之熔絲單元,亦可藉由反覆該積層圖案而積層8層以上。 In addition, as shown in FIG. 7, the fuse unit to which the present invention is applied may be repeated by repeating the second low melting point metal layer 4, the high melting point metal layer 2, the first low melting point metal layer 3, and the high melting point metal layer 2 Layered pattern. The fuse unit 60 shown in FIG. 7 is designed to reduce the resistance due to an increase in the thickness of the fuse unit while maintaining the fast fusing performance as in the fuse units 20 and 30 described above by repeating the laminated pattern. And suppress the deformation caused by the increase in rigidity during reflow. In addition, although the fuse unit 60 stacks 8 layers by repeating the stacking pattern, the fuse unit of the present invention can also be stacked by stacking 8 or more layers by repeating the stacking pattern.

又,適用本發明之熔絲單元,亦可如圖8所示,反覆第2低熔點金屬層4、高熔點金屬層2、第1低熔點金屬層3、高熔點金屬層2之積層圖案且積層第2低熔點金屬層4作為最外層。圖8所示之熔絲單元70,係藉由反覆該積層圖案而積層8層後,積層第2低熔點金屬層4作為最外層,所有高熔點金屬層2積層於第1,第2低熔點金屬層3,4之間。 In addition, as shown in FIG. 8, the fuse unit to which the present invention is applied can also repeat the stacked pattern of the second low melting point metal layer 4, the high melting point metal layer 2, the first low melting point metal layer 3, and the high melting point metal layer 2 and The second low melting point metal layer 4 is laminated as the outermost layer. The fuse unit 70 shown in FIG. 8 is formed by laminating 8 layers by repeating the lamination pattern, and the second low melting point metal layer 4 is laminated as the outermost layer, and all the high melting point metal layers 2 are laminated at the first and second low melting points Between metal layers 3,4.

此外,如上所述,熔絲單元1,10,20,30,40,50,60,70,雖可非常合適地使用Bi、In或包含Bi或In之合金作為構成第2低熔點金屬層之金屬,但In電阻率較Sn低且為稀有金屬而為高價之材料,因此從製造成本、材料取得之容易性等綜合判斷,相較於圖1~4所示之熔絲單元1,10,20,30,圖5~8所示之熔絲單元40,50,60,70之構成應較佳。 In addition, as described above, the fuse unit 1,10,20,30,40,50,60,70 can be very suitably used as Bi, In or an alloy containing Bi or In as the second low melting point metal layer Metal, but the In resistivity is lower than Sn and it is a rare metal and an expensive material. Therefore, the overall judgment from the manufacturing cost, the ease of material acquisition, etc. is compared to the fuse unit 1, 10 shown in Figures 1 to 4. 20, 30, the configuration of the fuse units 40, 50, 60, 70 shown in Figs. 5-8 should be better.

又,上述之熔絲單元1,10,20,30,40,50,60,70,較佳為將第1低熔點金屬層3之體積設為較高熔點金屬層2之體積大。熔絲單元1,10,20,30,40,50,60,70,藉由使第1低熔點金屬層3之體積增多,而能有效地藉由高熔點金屬層2之侵蝕而在短時間進行熔斷。同樣地,熔絲單元1,10,20,30,40,50,60,70,較佳為將第2低熔點金屬層4之體積設為較高熔點金屬層2之體積大。 In addition, in the above-mentioned fuse units 1, 10, 20, 30, 40, 50, 60, and 70, it is preferable that the volume of the first low-melting-point metal layer 3 is larger than the volume of the higher-melting-point metal layer 2. The fuse unit 1, 10, 20, 30, 40, 50, 60, 70 can effectively increase the volume of the first low-melting-point metal layer 3 in a short time by the erosion of the high-melting-point metal layer 2 Fuse. Similarly, in the fuse unit 1, 10, 20, 30, 40, 50, 60, 70, it is preferable to set the volume of the second low melting point metal layer 4 to be larger than the volume of the higher melting point metal layer 2.

其次,說明使用了上述之熔絲單元1,10,20,30,40,50,60,70 之熔絲元件、保護元件、短路元件、切換元件。此外,以下之說明中,雖係說明使用了熔絲單元1之各元件,但當然亦可使用熔絲單元1,10,20,30,40,50,60,70。 Next, the use of the above fuse unit 1,10,20,30,40,50,60,70 is explained Fuse element, protection element, short circuit element, switching element. In addition, in the following description, although each element of the fuse unit 1 is described, it is of course also possible to use the fuse units 1, 10, 20, 30, 40, 50, 60, 70.

[熔絲元件] [Fuse element]

適用本發明之熔絲元件80,如圖9所示具備絕緣基板81、設於絕緣基板81之第1電極82及第2電極83、以及熔絲單元1,該熔絲單元1係跨第1及第2電極82,83間而構裝,藉由超過額定之電流通電而以自體發熱熔斷,據以遮斷第1電極82與第2電極83之間之電流路徑。 The fuse element 80 to which the present invention is applied includes an insulating substrate 81, a first electrode 82 and a second electrode 83 provided on the insulating substrate 81, and a fuse unit 1 as shown in FIG. 9. The fuse unit 1 spans the first It is constructed between the second electrodes 82 and 83 and is fused by self-heating by being energized with a current exceeding the rated current, thereby blocking the current path between the first electrode 82 and the second electrode 83.

絕緣基板81,係使用例如氧化鋁、玻璃陶瓷、莫來石、及氧化鋯等具有絕緣性之構件形成為方形。除此之外,絕緣基板81亦可使用玻璃環氧基板、苯酚基板等用於印刷配線基板的材料。 The insulating substrate 81 is formed into a square shape using insulating members such as alumina, glass ceramics, mullite, and zirconia. In addition, as the insulating substrate 81, a material such as a glass epoxy substrate, a phenol substrate, or the like for printed wiring boards may be used.

於絕緣基板81之相對向之兩端部形成有第1,第2電極82,83。第1,第2電極82,83分別藉由Ag或Cu配線等導電圖案而形成,為了防止氧化而於表面適當地設有Sn鍍敷、Ni/Au鍍敷、Ni/Pd鍍敷、Ni/Pd/Au鍍敷等保護層86。又,第1,第2電極82,83,係從絕緣基板81之表面81a經由城堡形接點(castellation)而與形成於背面81b之第1,第2外部連接電極82a,83a連續。熔絲元件80,係透過形成於背面81b之第1,第2外部連接電極82a,83a構裝於電路基板之電流路徑上。 First and second electrodes 82 and 83 are formed on opposite ends of the insulating substrate 81. The first and second electrodes 82, 83 are each formed by conductive patterns such as Ag or Cu wiring, and Sn plating, Ni/Au plating, Ni/Pd plating, Ni/ Protective layer 86 such as Pd/Au plating. In addition, the first and second electrodes 82, 83 are continuous from the front surface 81a of the insulating substrate 81 via a castellation to the first and second external connection electrodes 82a, 83a formed on the back surface 81b. The fuse element 80 is mounted on the current path of the circuit board through the first and second external connection electrodes 82a and 83a formed on the back surface 81b.

第1及第2電極82,83透過焊料等連接材料88而連接有熔絲單元1。 The first and second electrodes 82 and 83 are connected to the fuse unit 1 through a connecting material 88 such as solder.

如上所述,熔絲單元1,藉由具備高熔點金屬層2,由於對高溫環境之耐性被提升,因此構裝性優異,在透過連接材料88搭載於第1 及第2電極82,83間後,可藉由回焊焊接等容易地連接。此外,熔絲單元1,亦可使用設於最下層之第1低熔點金屬層3或第2低熔點金屬層4作為連接材料而連接於第1,第2電極82,83。 As described above, since the fuse unit 1 is provided with the high-melting-point metal layer 2, the resistance to a high-temperature environment is improved, so it is excellent in structurability, and is mounted on the first through the connecting material 88 After the second electrode 82, 83, it can be easily connected by reflow welding or the like. In addition, the fuse unit 1 may also be connected to the first and second electrodes 82, 83 using the first low-melting-point metal layer 3 or the second low-melting-point metal layer 4 provided in the lowermost layer as a connecting material.

[構裝狀態] [Construction status]

其次,說明熔絲單元1之構裝狀態。熔絲元件80中,如圖9所示,熔絲單元1係從絕緣基板81之表面81a分離而構裝。 Next, the construction state of the fuse unit 1 will be described. In the fuse element 80, as shown in FIG. 9, the fuse unit 1 is constructed by being separated from the surface 81 a of the insulating substrate 81.

另一方面,在將熔絲單元對絕緣基板之表面藉由印刷而形成等,熔絲單元與絕緣基板表面接觸之熔絲元件中,於第1,第2電極間熔絲單元之熔融金屬會附著於絕緣基板上而產生洩漏。例如在藉由將Ag糊對陶瓷基板印刷而形成有熔絲單元之熔絲元件中,陶瓷與銀被燒結而滲入,殘留於第1,第2電極間。因此,會因該熔絲單元之熔融殘渣使洩漏電流流至第1,第2電極間,而無法完全遮斷電流路徑。 On the other hand, in the fuse element in which the fuse unit is formed on the surface of the insulating substrate by printing, and the fuse unit is in contact with the surface of the insulating substrate, the molten metal in the fuse unit between the first and second electrodes will It adheres to the insulating substrate and causes leakage. For example, in a fuse element in which a fuse unit is formed by printing Ag paste on a ceramic substrate, ceramic and silver are sintered and infiltrated, and remain between the first and second electrodes. Therefore, the leakage current flows between the first and second electrodes due to the molten residue of the fuse unit, and the current path cannot be completely blocked.

關於此點,於熔絲元件80中,係與絕緣基板81分開而以別的單體形成熔絲單元1,且從絕緣基板81之表面81a分離構裝。是以,熔絲元件80中,即使在熔絲單元1之熔融時亦不會發生熔融金屬對絕緣基板81滲入而可被引入第1,第2電極82,83上,能確實地使第1,第2電極82,83間絕緣。 In this regard, in the fuse element 80, the fuse unit 1 is formed separately from the insulating substrate 81, and is formed separately from the surface 81a of the insulating substrate 81. Therefore, in the fuse element 80, even when the fuse unit 1 is melted, penetration of molten metal into the insulating substrate 81 does not occur and can be introduced into the first and second electrodes 82, 83, so that the first , The second electrode 82,83 is insulated.

[助焊劑片] [Flux sheet]

又,熔絲元件80中,為了防止高熔點金屬層2或第1,第2低熔點金屬層3,4之氧化與除去熔斷時之氧化物及提升焊料之流動性,亦可於熔絲單元1之表面或背面塗布助焊劑。又,如圖9所示,亦可於熔絲單元1上最外層之全面配置助焊劑片87。助焊劑片87,係使流動體或半流動體之助焊 劑含浸、保持於片狀之支撐體而成者,例如使助焊劑含浸於不織布或篩網狀之布料而成者。 In addition, in the fuse element 80, in order to prevent the oxidation of the high-melting-point metal layer 2 or the first and second low-melting-point metal layers 3, 4 and to remove the oxides at the time of fusing and to improve the fluidity of the solder, the fuse unit 1. Apply flux on the surface or back of 1. Furthermore, as shown in FIG. 9, the flux sheet 87 may be arranged all over the outermost layer on the fuse unit 1. Flux sheet 87 is a flux for fluid or semi-fluid The agent is impregnated and held in a sheet-shaped support, for example, the impregnated flux is impregnated with a non-woven fabric or a mesh-shaped fabric.

如圖10所示,助焊劑片87,較佳為具有較熔絲單元1之表面積大之面積。藉此,熔絲單元1被助焊劑片87完全覆蓋,即使因熔融使體積膨脹時,亦可確實地實現藉助焊劑除去氧化物及藉濕潤性提升達成之速熔斷。 As shown in FIG. 10, the flux sheet 87 preferably has an area larger than the surface area of the fuse unit 1. As a result, the fuse unit 1 is completely covered by the flux sheet 87, and even when the volume is expanded due to melting, the rapid removal of the oxide by the flux and the improvement of wettability can be reliably achieved.

藉由配置助焊劑片87,於熔絲單元1之構裝時或熔絲元件80之構裝時之熱處理步驟中亦可將助焊劑保持於熔絲單元1之全面,於熔絲元件80之實際使用時,可提高第1,第2低熔點金屬層3,4(例如焊料)之濕潤性,且除去第1,第2低熔點金屬溶解期間之氧化物,使用對高熔點金屬(例如Ag)之侵蝕作用使速熔斷性提升。 By arranging the flux sheet 87, the flux can also be kept on the entire surface of the fuse unit 1 during the heat treatment step when the fuse unit 1 is assembled or when the fuse element 80 is assembled. In actual use, the wettability of the first and second low-melting-point metal layers 3, 4 (such as solder) can be improved, and the oxides during the dissolution of the first and second low-melting-point metals can be removed. ) The erosive effect improves the fast fusing.

又,藉由配置助焊劑片87,即使於最外層之高熔點金屬層2之表面形成有以Sn作為主成分之無鉛焊料等氧化防止膜時,亦能除去該氧化防止膜之氧化物,有效地防止高熔點金屬層2之氧化,維持且提升速熔斷性。 Moreover, by arranging the flux sheet 87, even if an oxidation preventing film such as lead-free solder mainly composed of Sn is formed on the surface of the outermost refractory metal layer 2, the oxide of the oxidation preventing film can be removed, which is effective To prevent the oxidation of the high-melting-point metal layer 2 and maintain and improve the fast fusing.

此外,熔絲元件80,亦可取代助焊劑片87,如圖11所示,於熔絲單元1之最外層塗布助焊劑85a後,於助焊劑85a上配置不織布或篩網狀之布料,並使助焊劑含浸。又,熔絲元件80,亦可如圖12所示,取代助焊劑片而於熔絲單元1最外層之全面塗布混合有纖維狀物之助焊劑85b。助焊劑85b藉由混合有纖維狀物而能提高黏性,在高溫環境下亦不易流動,能於熔絲單元1全面謀求熔斷時之氧化物除去及濕潤性之提升。此外,作為混合於助焊劑85b之纖維狀物,可非常合適地使用例如不織布纖維、玻 璃纖維等具備絕緣性、耐熱性之纖維。 In addition, the fuse element 80 can also replace the flux sheet 87. As shown in FIG. 11, after applying the flux 85a to the outermost layer of the fuse unit 1, a non-woven fabric or a mesh-like cloth is placed on the flux 85a, and Impregnate the flux. In addition, as shown in FIG. 12, the fuse element 80 may replace the flux sheet and apply the flux 85 b mixed with the fibrous material to the entire outermost layer of the fuse unit 1. The flux 85b can improve the viscosity by mixing with fibrous materials, and it is not easy to flow in a high-temperature environment. The fuse unit 1 can comprehensively seek to remove oxides and improve wettability during fusing. In addition, as the fibrous material mixed with the flux 85b, for example, non-woven fiber, glass Glass fiber and other fibers with insulation and heat resistance.

此外,熔絲單元1,雖能如上所述藉由回焊焊接連接於第1,第2電極82,83上,但除此之外,熔絲單元1亦可藉由超音波熔接而連接於第1,第2電極82,83上。 In addition, although the fuse unit 1 can be connected to the first and second electrodes 82, 83 by reflow welding as described above, in addition, the fuse unit 1 can also be connected to the first electrode by ultrasonic welding. On the first and second electrodes 82, 83.

[覆蓋構件] [Cover member]

又,熔絲元件80中,於設有熔絲單元1之絕緣基板81之表面81a上安裝有保護內部且防止熔融之熔絲單元1之飛散之覆蓋構件89。覆蓋構件89,能藉由各種工程塑膠、陶瓷等具有絕緣性之構件形成,透過絕緣性之接著劑84而連接。熔絲元件80中,由於熔絲單元1係被覆蓋構件89覆蓋,因此在伴隨因過電流所致之弧放電之產生之自體發熱遮斷時,熔融金屬亦被覆蓋構件89捕捉而能防止往周圍飛散。 In addition, in the fuse element 80, a cover member 89 that protects the inside and prevents scattering of the melted fuse unit 1 is mounted on the surface 81a of the insulating substrate 81 on which the fuse unit 1 is provided. The covering member 89 can be formed by insulating members such as various engineering plastics and ceramics, and is connected through an insulating adhesive 84. In the fuse element 80, since the fuse unit 1 is covered by the covering member 89, when self-heating caused by arc discharge due to overcurrent is interrupted, molten metal is also caught by the covering member 89 and can be prevented Scattered around.

又,覆蓋構件89具有從頂面89a往絕緣基板81延伸至至少助焊劑片87之側面之突起部89b。覆蓋構件89,由於藉由突起部89b,而使助焊劑片87之側面之移動受到限制,因此能防止助焊劑片87之位置偏移。亦即,突起部89b,係相較於助焊劑片87之大小以保持既定空隙之大小,對應應保持助焊劑片87之位置而設置。此外,突起部89b,亦可作成旋繞助焊劑片87側面並加以覆蓋之壁面,亦可為局部突起者。 In addition, the covering member 89 has a protrusion 89b extending from the top surface 89a toward the insulating substrate 81 to at least the side surface of the flux sheet 87. Since the covering member 89 restricts the movement of the side surface of the flux sheet 87 by the protrusion 89b, the position of the flux sheet 87 can be prevented from shifting. That is, the protruding portion 89b is provided to maintain the size of the predetermined gap compared to the size of the flux sheet 87, and is provided corresponding to the position where the flux sheet 87 should be maintained. In addition, the protruding portion 89b may be formed as a wall surface that wraps around the side surface of the flux sheet 87 and may be partially protruded.

又,覆蓋構件89,係於助焊劑片87與頂面89a之間相隔既定間隔之構成。之所以作成此構成,係因在熔絲單元1熔融時,必須具有熔融之熔絲單元1將助焊劑片87往上壓之空隙之故。 In addition, the covering member 89 is constituted by a predetermined interval between the flux sheet 87 and the top surface 89a. The reason for this configuration is that when the fuse unit 1 is melted, it is necessary to have a gap where the melted fuse unit 1 presses the flux sheet 87 upward.

是以,覆蓋構件89中,覆蓋構件89之內部空間之高度(至頂面89a為止之高度),係構成為較絕緣基板81之表面81a上之熔融之熔絲 單元1之高度與助焊劑片87之厚度之和還大。 Therefore, in the covering member 89, the height of the internal space of the covering member 89 (the height up to the top surface 89a) is configured to be higher than the molten fuse on the surface 81a of the insulating substrate 81 The sum of the height of the unit 1 and the thickness of the flux sheet 87 is still large.

[電路構成] [Circuit configuration]

此種熔絲元件80具有圖13(A)所示之電路構成。熔絲元件80,藉由透過第1,第2外部連接電極82a,83a構裝於外部電路,以組裝於該外部電路之電流路徑上。熔絲元件80,在既定額定電流流通熔絲單元1之期間,不會因自體發熱而熔斷。接著,熔絲元件80,在超過額定之過電流通電後,熔絲單元1即因自體發熱而熔斷,遮斷第1,第2電極82,83間,藉此遮斷該外部電路之電流路徑(圖13(B))。 This fuse element 80 has the circuit configuration shown in FIG. 13(A). The fuse element 80 is assembled in an external circuit through the first and second external connection electrodes 82a and 83a to be assembled in the current path of the external circuit. The fuse element 80 does not blow due to self-heating while the predetermined rated current flows through the fuse unit 1. Next, after the fuse element 80 is energized after exceeding the rated overcurrent, the fuse unit 1 is fused due to self-heating, interrupting the first and second electrodes 82, 83, thereby interrupting the current of the external circuit Path (Figure 13(B)).

此時,熔絲單元1如上所述,由於積層有熔點低於高熔點金屬層2之第1低熔點金屬層3及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,因此藉由過電流所致之自體發熱,從第2低熔點金屬層4之熔點開始熔融,而開始侵蝕高熔點金屬層2。是以,熔絲單元1,能藉由利用第1,第2低熔點金屬層3,4對高熔點金屬層2之侵蝕作用,高熔點金屬層2以低於自身熔點之溫度被熔融,迅速熔斷。 At this time, the fuse unit 1 has the first low melting point metal layer 3 having a melting point lower than the high melting point metal layer 2 and the second low melting point metal layer 4 having a melting point lower than the first low melting point metal layer 3 as described above. Therefore, the self-heating caused by the overcurrent begins to melt from the melting point of the second low-melting-point metal layer 4 and begins to erode the high-melting-point metal layer 2. Therefore, the fuse unit 1 can use the erosion of the first and second low-melting-point metal layers 3 and 4 to the high-melting-point metal layer 2, and the high-melting-point metal layer 2 is melted at a temperature lower than its melting point, quickly Fuse.

進而,如圖14所示,熔絲單元1之熔融金屬,由於藉由第1及第2電極82,83之物理性拉入作用被往左右分斷,因此能迅速且確實地遮斷第1及第2電極82,83間之電流路徑。 Furthermore, as shown in FIG. 14, the molten metal of the fuse unit 1 is divided to the left and right by the physical pull-in action of the first and second electrodes 82, 83, so the first can be quickly and surely blocked And the current path between the second electrodes 82,83.

[保護元件] [Protection element]

其次,說明使用了熔絲單元1之保護元件。適用本發明之保護元件90,如圖15(A)(B)所示,具備絕緣基板91、積層於絕緣基板91且被絕緣構件92覆蓋之發熱體93、形成於絕緣基板91兩端之第1電極94及第2電極95、於絕緣構件91上積層為與發熱體93重疊且電性連接於發熱體93之發 熱體引出電極96、以及兩端分別連接於第1,第2電極94,95且中央部連接於發熱體引出電極96之熔絲單元1。又,保護元件90,係於絕緣基板91上安裝有保護內部之覆蓋構件97。 Next, the protection element using the fuse unit 1 will be described. As shown in FIGS. 15(A) and (B), the protection element 90 to which the present invention is applied includes an insulating substrate 91, a heating element 93 laminated on the insulating substrate 91 and covered by the insulating member 92, and first substrates formed on both ends of the insulating substrate 91 The first electrode 94 and the second electrode 95 are laminated on the insulating member 91 to overlap the heating element 93 and electrically connected to the heating element 93. The heating body extraction electrode 96 and both ends are respectively connected to the first and second electrodes 94, 95 and the center portion is connected to the fuse unit 1 of the heating body extraction electrode 96. In addition, the protective element 90 is mounted on the insulating substrate 91 with a cover member 97 that protects the inside.

絕緣基板91係與上記絕緣基板81同樣地,使用例如氧化鋁、玻璃陶瓷、莫來石、及氧化鋯等具有絕緣性之構件形成為方形。除此之外,絕緣基板91亦可使用玻璃環氧基板、苯酚基板等用於印刷配線基板的材料。 The insulating substrate 91 is formed into a square shape using insulating members such as alumina, glass ceramic, mullite, and zirconia, similar to the insulating substrate 81 described above. In addition, as the insulating substrate 91, a material such as a glass epoxy substrate and a phenol substrate may be used for printed wiring boards.

於絕緣基板91之相對向之兩端部形成有第1,第2電極94,95。第1,第2電極94,95分別藉由Ag或Cu配線等導電圖案而形成。又,第1,第2電極94,95,係從絕緣基板91之表面91a經由城堡形接點而與形成於背面91b之第1,第2外部連接電極94a,95a連續。保護元件90,係藉由形成於背面91b之第1,第2外部連接電極94a,95a連接於構裝保護元件90之電路基板所設之連接電極,而組裝於形成在電路基板上之電流路徑之一部分。 First and second electrodes 94 and 95 are formed on opposite ends of the insulating substrate 91. The first and second electrodes 94 and 95 are formed by conductive patterns such as Ag or Cu wiring. The first and second electrodes 94, 95 are continuous from the first and second external connection electrodes 94a, 95a formed on the back surface 91b from the front surface 91a of the insulating substrate 91 via a castle-shaped contact. The protection element 90 is assembled into the current path formed on the circuit board by connecting the first and second external connection electrodes 94a, 95a formed on the back surface 91b to the connection electrodes provided on the circuit board on which the protection element 90 is constructed Part.

發熱體93係具有通電則發熱之導電性之構件,由例如鎳鉻、W、Mo、Ru等或包含此等之材料構成。發熱體93能藉由使用網版印刷技術將此等合金或組成物、化合物之粉狀體與樹脂結合劑等混合而成糊狀者在絕緣基板91上形成圖案、加以燒成等形成。 The heating element 93 is an electrically conductive member that generates heat when energized, and is made of, for example, nickel chromium, W, Mo, Ru, or a material including these. The heating element 93 can be formed by forming a pattern on the insulating substrate 91, firing, etc., by using a screen printing technique to mix a powder of these alloys or compositions, compounds, and a resin binder into a paste.

又,保護元件90中,發熱體93被絕緣構件92覆蓋,並以隔著絕緣構件92與發熱體93對向之方式形成發熱體引出電極96。發熱體引出電極96連接有熔絲單元1,藉此,發熱體93隔著絕緣構件92及發熱體引出電極96與熔絲單元1重疊。絕緣構件92,係為了謀求發熱體93之 保護及絕緣且將發熱體93之熱以良好效率往熔絲單元1傳達而設置,由例如玻璃層所構成。 In the protection element 90, the heating element 93 is covered with the insulating member 92, and the heating element extraction electrode 96 is formed so as to face the heating element 93 via the insulating member 92. The heating element extraction electrode 96 is connected to the fuse unit 1, whereby the heating element 93 overlaps the fuse unit 1 via the insulating member 92 and the heating element extraction electrode 96. The insulating member 92 is for seeking the heating element 93 It is provided for protection and insulation, and transmits the heat of the heating element 93 to the fuse unit 1 with good efficiency, and is composed of, for example, a glass layer.

此外,發熱體93,亦可形成於積層在絕緣基板91之絕緣構件92之內部。又,發熱體93亦可形成於與形成有第1,第2電極94,95之絕緣基板91之表面91a相反側之背面91b,或者,於絕緣基板91之表面91a上與第1,第2電極94,95相鄰形成。又,發熱體93亦可形成於絕緣基板91之內部。 In addition, the heating element 93 may be formed inside the insulating member 92 laminated on the insulating substrate 91. In addition, the heating element 93 may be formed on the back surface 91b opposite to the surface 91a of the insulating substrate 91 on which the first and second electrodes 94, 95 are formed, or may be formed on the surface 91a of the insulating substrate 91 with the first and second The electrodes 94, 95 are formed adjacent to each other. In addition, the heating element 93 may be formed inside the insulating substrate 91.

又,發熱體93之一端與發熱體引出電極96連接,另一端與發熱體電極99連接。發熱體引出電極96具有形成於絕緣基板91之表面91a上且與發熱體93連接之下層部96a、以及與發熱體93對向而積層於絕緣構件92上且與熔絲單元1連接之上層部96b。藉此,發熱體93透過發熱體引出電極96與熔絲單元1電性連接。此外,發熱體引出電極96,藉由隔著絕緣構件92而與發熱體93對向配置,而能使熔絲單元1熔融,且使熔融導體易於凝集。 In addition, one end of the heating element 93 is connected to the heating element extraction electrode 96 and the other end is connected to the heating element electrode 99. The heating element extraction electrode 96 has a lower layer portion 96a formed on the surface 91a of the insulating substrate 91 and connected to the heating element 93, and an upper layer portion opposed to the heating element 93 and laminated on the insulating member 92 and connected to the fuse unit 1 96b. Thereby, the heating element 93 is electrically connected to the fuse unit 1 through the heating element extraction electrode 96. In addition, the heating element extraction electrode 96 is arranged to face the heating element 93 via the insulating member 92, so that the fuse unit 1 can be melted, and the molten conductor can be easily aggregated.

又,發熱體電極99形成於絕緣基板91之表面91a上,與隔著城堡形接點而形成於絕緣基板91之背面91b之發熱體供電電極99a連續。 The heating element electrode 99 is formed on the front surface 91a of the insulating substrate 91 and continues to the heating element power supply electrode 99a formed on the back surface 91b of the insulating substrate 91 via the castellated contact.

保護元件90,以從第1電極94經由發熱體引出電極96跨至第2電極95之方式連接有熔絲單元1。熔絲單元1,係透過焊料等連接材料100連接於第1,第2電極94,95及發熱體引出電極96上。 The protection element 90 is connected to the fuse unit 1 so as to extend from the first electrode 94 to the second electrode 95 via the heating element extraction electrode 96. The fuse unit 1 is connected to the first and second electrodes 94, 95 and the heating element extraction electrode 96 through a connection material 100 such as solder.

如上所述,熔絲單元1,由於藉由具備高熔點金屬層2而提升了對高溫環境之耐性,因此構裝性優異,能在透過連接材料100被搭載於第1,第2電極94,95及發熱體引出電極96上後,藉由回焊焊接等容易地 連接。此外,熔絲單元1,亦可將設於最下層之第1低熔點金屬層3或第2低熔點金屬層4作為連接材料使用,以連接於第1,第2電極94,95及發熱體引出電極96。 As described above, since the fuse unit 1 is provided with the high-melting-point metal layer 2, the resistance to high-temperature environments is improved, so it has excellent structural properties and can be mounted on the first and second electrodes 94 through the connection material 100. After the 95 and the heating element are drawn out on the electrode 96, it can be easily connection. In addition, the fuse unit 1 may also use the first low-melting-point metal layer 3 or the second low-melting-point metal layer 4 provided in the lowermost layer as a connecting material to connect to the first and second electrodes 94, 95 and the heating element引出 electrode 96.

[助焊劑片] [Flux sheet]

又,保護元件90中,為了防止高熔點金屬層2或第1,第2低熔點金屬層3,4之氧化與除去熔斷時之氧化物及提升焊料之流動性,亦可於熔絲單元1之表面或背面塗布助焊劑。又,如圖15所示,亦可於熔絲單元1上最外層之全面配置助焊劑片101。助焊劑片101係與上述助焊劑片87同樣地,使流動體或半流動體之助焊劑含浸、保持於片狀之支撐體而成者,例如使助焊劑含浸於不織布或篩網狀之布料而成者。 In addition, in the protection element 90, in order to prevent the oxidation of the high-melting-point metal layer 2 or the first and second low-melting-point metal layers 3, 4 and to remove the oxide at the time of fusing and improve the fluidity of the solder, the fuse unit 1 Flux is applied on the surface or back surface. Furthermore, as shown in FIG. 15, the flux sheet 101 may be arranged all over the outermost layer on the fuse unit 1. The flux sheet 101 is the same as the flux sheet 87 described above, in which the flux of the fluid or semi-fluid is impregnated and held in a sheet-shaped support, for example, the flux is impregnated into a non-woven fabric or mesh-like fabric Successor.

助焊劑片101,較佳為具有較熔絲單元1之表面積大之面積。藉此,熔絲單元1被助焊劑片101完全覆蓋,即使因熔融使體積膨脹時,亦可確實地實現藉助焊劑除去氧化物及藉濕潤性提升達成之速熔斷。 The flux sheet 101 preferably has a larger area than the surface area of the fuse unit 1. As a result, the fuse unit 1 is completely covered by the flux sheet 101, and even when the volume is expanded due to melting, the rapid removal of the oxide by the flux and the improvement of wettability can be reliably achieved.

藉由配置助焊劑片101,於熔絲單元1之構裝時或保護元件90之構裝時之熱處理步驟中亦可將助焊劑保持於熔絲單元1之全面,於保護元件90之實際使用時,可提高第1,第2低熔點金屬層3,4(例如焊料)之濕潤性,且除去第1,第2低熔點金屬溶解期間之氧化物,使用對高熔點金屬(例如Ag)之侵蝕作用使速熔斷性提升。 By arranging the flux sheet 101, the flux can also be kept in the entirety of the fuse unit 1 during the heat treatment step when the fuse unit 1 is assembled or when the protection element 90 is assembled, and is actually used in the protection element 90 Can improve the wettability of the first and second low-melting-point metal layers 3, 4 (such as solder), and remove the oxides during the dissolution of the first and second low-melting-point metals, using the high melting point metal (such as Ag) The erosion effect improves the fast fusing.

又,藉由配置助焊劑片101,即使於最外層之高熔點金屬層2之表面形成有以Sn作為主成分之無鉛焊料等氧化防止膜時,亦能除去該氧化防止膜之氧化物,有效地防止高熔點金屬層2之氧化,維持且提升速熔斷性。 Furthermore, by arranging the flux sheet 101, even if an oxidation preventing film such as lead-free solder mainly composed of Sn is formed on the surface of the outermost refractory metal layer 2, the oxide of the oxidation preventing film can be removed, which is effective To prevent the oxidation of the high-melting-point metal layer 2 and maintain and improve the fast fusing.

此外,保護元件90,亦可取代助焊劑片101,如圖16所示,於熔絲單元1之最外層塗布助焊劑104a後,於助焊劑104a上配置不織布或篩網狀之布料,並使助焊劑104a含浸。又,保護元件90,亦可如圖17所示,取代助焊劑片而於熔絲單元1最外層之全面塗布混合有纖維狀物之助焊劑104b。助焊劑104b藉由混合有纖維狀物而能提高黏性,在高溫環境下亦不易流動,能於熔絲單元1全面謀求熔斷時之氧化物除去及濕潤性之提升。此外,作為混合於助焊劑104b之纖維狀物,可非常合適地使用例如不織布纖維、玻璃纖維等具備絕緣性、耐熱性之纖維。 In addition, the protection element 90 can also replace the flux sheet 101. As shown in FIG. 16, after applying the flux 104a to the outermost layer of the fuse unit 1, a non-woven fabric or mesh-like cloth is arranged on the flux 104a, and The flux 104a is impregnated. Furthermore, as shown in FIG. 17, the protective element 90 may replace the flux sheet and apply the flux 104b mixed with the fibrous material to the entire outermost layer of the fuse unit 1. The flux 104b can improve the viscosity by mixing with fibrous materials, and it is not easy to flow in a high-temperature environment, so that the fuse unit 1 can comprehensively remove oxides and improve wettability during fusing. In addition, as the fibrous material mixed with the flux 104b, for example, nonwoven fabric fibers, glass fibers, and other fibers having insulation and heat resistance can be suitably used.

此外,第1,第2電極94,95、發熱體引出電極96及發熱體電極99係藉由例如Ag或Cu等之導電圖案而形成,並適當地於表面形成有Sn鍍敷、Ni/Au鍍敷、Ni/Pd鍍敷、Ni/Pd/Au鍍敷等之保護層98。藉此,防止表面之氧化,且能抑制熔絲單元1之第1,第2低熔點金屬層3,4或熔絲單元1之連接用焊料等之連接材料100對第1,第2電極94,95及發熱體引出電極96之侵蝕。 In addition, the first and second electrodes 94, 95, the heating element extraction electrode 96, and the heating element electrode 99 are formed by a conductive pattern such as Ag or Cu, and Sn plating, Ni/Au are appropriately formed on the surface Protective layer 98 for plating, Ni/Pd plating, Ni/Pd/Au plating, etc. This prevents surface oxidation and suppresses the first and second electrodes 94 of the first and second low-melting metal layers 3 and 4 of the fuse unit 1 or the connecting material 100 such as solder for connecting the fuse unit 1 to the first and second electrodes 94 , 95 and the heating element lead to the erosion of the electrode 96.

又,於第1,第2電極94,95形成有防止上述熔絲單元1之熔融導體或熔絲單元1之連接材料100流出之由玻璃等絕緣材料構成之流出防止部102。 Further, at the first and second electrodes 94, 95, an outflow preventing portion 102 made of an insulating material such as glass for preventing the outflow of the molten conductor of the fuse unit 1 or the connection material 100 of the fuse unit 1 is formed.

[覆蓋構件] [Cover member]

又,保護元件90,於設有熔絲單元1之絕緣基板91之表面91a上安裝有保護內部且防止熔融之熔絲單元1飛散之覆蓋構件97。覆蓋構件97,能藉由各種工程塑膠、陶瓷等具有絕緣性之構件形成。保護元件90中,由於熔絲單元1係被覆蓋構件97覆蓋,因此熔融金屬被覆蓋構件97捕捉而能防 止往周圍飛散。 In addition, the protective element 90 is provided with a cover member 97 that protects the inside and prevents the molten fuse unit 1 from scattering on the surface 91 a of the insulating substrate 91 provided with the fuse unit 1. The covering member 97 can be formed by insulating members such as various engineering plastics and ceramics. In the protective element 90, since the fuse unit 1 is covered by the covering member 97, the molten metal is caught by the covering member 97 and can be prevented Stop flying around.

又,覆蓋構件97具有從頂面97a往絕緣基板91延伸至至少助焊劑片101之側面之突起部97b。覆蓋構件97,由於藉由突起部97b,而使助焊劑片101之側面之移動受到限制,因此能防止助焊劑片101之位置偏移。亦即,突起部97b,係相較於助焊劑片101之大小以保持既定空隙之大小,對應應保持助焊劑片101之位置而設置。此外,突起部97b,亦可作成旋繞助焊劑片101側面並加以覆蓋之壁面,亦可為局部突起者。 In addition, the covering member 97 has a protrusion 97b extending from the top surface 97a toward the insulating substrate 91 to at least the side surface of the flux sheet 101. Since the covering member 97 restricts the movement of the side surface of the flux sheet 101 by the protrusion 97b, the position of the flux sheet 101 can be prevented from shifting. That is, the protruding portion 97b is compared with the size of the flux sheet 101 to maintain the size of the predetermined gap, and is provided corresponding to the position where the flux sheet 101 should be maintained. In addition, the protruding portion 97b may be formed as a wall surface that wraps around the side surface of the flux sheet 101 and may be partially protruded.

又,覆蓋構件97,係於助焊劑片101與頂面97a之間相隔既定間隔之構成。之所以作成此構成,係因在熔絲單元1熔融時,必須具有熔融之熔絲單元1將助焊劑片101往上壓之空隙之故。 In addition, the covering member 97 is constituted by a predetermined interval between the flux sheet 101 and the top surface 97a. The reason for this configuration is that when the fuse unit 1 is melted, it is necessary to have a gap where the melted fuse unit 1 presses the flux sheet 101 upward.

是以,覆蓋構件97中,覆蓋構件97之內部空間之高度(至頂面97a為止之高度),係構成為較絕緣基板91之表面91a上之熔融之熔絲單元1之高度與助焊劑片101之厚度之和還大。 Therefore, in the covering member 97, the height of the internal space of the covering member 97 (the height up to the top surface 97a) is configured to be higher than the height of the molten fuse unit 1 on the surface 91a of the insulating substrate 91 and the flux sheet The sum of the thickness of 101 is still large.

此種保護元件90,係形成有到達發熱體供電電極99a、發熱體電極99、發熱體93、發熱體引出電極96及熔絲單元1之對發熱體93之通電路徑。又,保護元件90中,發熱體電極99係透過發熱體供電電極99a而與使發熱體93通電之外部電路連接,藉由該外部電路控制發熱體電極99與熔絲單元1間之通電。 This protection element 90 is formed with an energizing path to the heating element 93 that reaches the heating element power supply electrode 99a, the heating element electrode 99, the heating element 93, the heating element extraction electrode 96, and the fuse unit 1. In the protection element 90, the heating element electrode 99 is connected to an external circuit that energizes the heating element 93 through the heating element power supply electrode 99a, and the energization between the heating element electrode 99 and the fuse unit 1 is controlled by the external circuit.

又,保護元件90,藉由熔絲單元1與發熱體引出電極96連接,來構成對發熱體93之通電路徑之一部分。是以,保護元件90,在熔絲單元1熔融而遮斷與外部電路之連接後,由於對發熱體93之通電路徑亦被遮斷,因此能使發熱停止。 In addition, the protective element 90 is connected to the heating element extraction electrode 96 by the fuse unit 1 to form a part of the energizing path to the heating element 93. Therefore, after the fuse unit 1 melts to cut off the connection with the external circuit, the current supply path to the heating element 93 is also cut off, so that the heat generation can be stopped.

[電路圖] [Circuit diagram]

適用本發明之保護元件90具有如圖18所示之電路構成。亦即,保護元件90,係由透過發熱體引出電極96跨第1,第2外部連接電極94a,95a間被串聯之熔絲單元1、以及藉由透過熔絲單元1之連接點通電而發熱使熔絲單元1熔融之發熱體93構成之電路構成。又,保護元件90之第1,第2電極94,95及發熱體電極99中,第1,第2外部連接電極94a,95a及發熱體供電電極99a分別連接於外部電路基板。藉此,保護元件90,熔絲單元1透過第1,第2電極94,95串聯於外部電路之電流路徑上,發熱體93透過發熱體電極99而與設於外部電路之電流控制元件連接。 The protection element 90 to which the present invention is applied has the circuit configuration shown in FIG. That is, the protection element 90 is the fuse unit 1 connected in series between the first and second external connection electrodes 94a, 95a by the electrode 96 drawn through the heating element, and generates heat by being energized through the connection point of the fuse unit 1 The circuit configuration of the heating element 93 that melts the fuse unit 1. In the first and second electrodes 94 and 95 of the protection element 90 and the heating element electrode 99, the first and second external connection electrodes 94a and 95a and the heating element power supply electrode 99a are respectively connected to the external circuit board. Thereby, the protection element 90 and the fuse unit 1 pass through the first and second electrodes 94 and 95 in series with the current path of the external circuit, and the heating element 93 passes through the heating element electrode 99 and is connected to the current control element provided in the external circuit.

[熔斷步驟] [Fuse Step]

由此種電路構成所構成之保護元件90,在產生遮斷外部電路之電流路徑之必要時,係藉由設於外部電路之電流控制元件使發熱體93通電。藉此,保護元件90,係藉由發熱體93之發熱使組裝於外部電路之電流路徑上之熔絲單元1熔融,而如圖19(A)所示,藉由熔絲單元1之熔融導體被拉引接近至濕潤性高之發熱體引出電極96及第1,第2電極94,95而熔斷熔絲單元1。藉此,熔絲單元1,能確實地使第1電極94~發熱體引出電極96~第2電極95之間熔斷(圖19(B)),而遮斷外部電路之電流路徑。又,藉由熔絲單元1熔斷,亦停止對發熱體93之供電。 The protection element 90 constituted by such a circuit configuration causes the heating element 93 to be energized by the current control element provided in the external circuit when it is necessary to interrupt the current path of the external circuit. Thereby, the protection element 90 melts the fuse unit 1 assembled on the current path of the external circuit by the heat of the heating element 93, and as shown in FIG. 19(A), by the fuse unit 1’s molten conductor The heating element drawn electrode close to the high wettability leads to the electrode 96 and the first and second electrodes 94, 95 to blow the fuse unit 1. As a result, the fuse unit 1 can surely fuse the first electrode 94 to the heating element extraction electrode 96 to the second electrode 95 (FIG. 19(B) ), and interrupt the current path of the external circuit. In addition, when the fuse unit 1 is blown, the power supply to the heating element 93 is also stopped.

此時,熔絲單元1如上所述,由於積層有熔點低於高熔點金屬層2之第1低熔點金屬層3及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,因此從第2低熔點金屬層4之熔點開始熔融,而開始侵蝕高熔點金屬層2。是以,熔絲單元1,能藉由利用第1,第2低熔點金屬層3,4對高 熔點金屬層2之侵蝕作用,高熔點金屬層2以低於熔融溫度之溫度被熔融,迅速熔斷。 At this time, the fuse unit 1 has the first low melting point metal layer 3 having a melting point lower than the high melting point metal layer 2 and the second low melting point metal layer 4 having a melting point lower than the first low melting point metal layer 3 as described above. Therefore, the melting point of the second low-melting-point metal layer 4 starts to melt, and the high-melting-point metal layer 2 begins to erode. Therefore, the fuse unit 1 can use the first and second low-melting-point metal layers 3 and 4 to be high The erosion effect of the melting point metal layer 2 is that the high melting point metal layer 2 is melted at a temperature lower than the melting temperature and quickly melts.

[短路元件] [Short circuit element]

其次,說明使用熔絲單元1之短路元件。圖20(A)顯示短路元件110之俯視圖,圖20(B)顯示短路元件110之剖面圖。短路元件110具備:絕緣基板111、設於絕緣基板111之發熱體112、於絕緣基板111上彼此相鄰設置之第1電極113及第2電極114、與第1電極113相鄰設置且電性連接於發熱體112之第3電極115、以及熔絲單元1,該熔絲單元1係藉由跨第1,第3電極113,115間設置而構成電流路徑,藉由來自發熱體112之加熱熔斷第1,第3電極113,115間之電流路徑,且透過熔融導體使第1,第2電極113,114短路。又,短路元件110中,於絕緣基板111上安裝有保護內部之覆蓋構件116。 Next, the short-circuit element using the fuse unit 1 will be described. FIG. 20(A) shows a top view of the short-circuit element 110, and FIG. 20(B) shows a cross-sectional view of the short-circuit element 110. The short-circuit element 110 includes an insulating substrate 111, a heating element 112 provided on the insulating substrate 111, a first electrode 113 and a second electrode 114 provided adjacent to each other on the insulating substrate 111, and is provided adjacent to the first electrode 113 and electrically The third electrode 115 connected to the heating element 112 and the fuse unit 1 are arranged across the first and third electrodes 113, 115 to form a current path, and the first 1. The current path between the third electrodes 113, 115, and the first and second electrodes 113, 114 are short-circuited through the molten conductor. In addition, in the short-circuit element 110, a cover member 116 for protecting the inside is mounted on the insulating substrate 111.

絕緣基板111,係使用例如氧化鋁、玻璃陶瓷、莫來石、及氧化鋯等具有絕緣性之構件形成為方形。除此之外,絕緣基板111亦可使用玻璃環氧基板、苯酚基板等用於印刷配線基板的材料。 The insulating substrate 111 is formed into a square shape using insulating members such as alumina, glass ceramics, mullite, and zirconia. In addition, as the insulating substrate 111, a material such as a glass epoxy substrate, a phenol substrate, or the like for printed wiring boards may be used.

發熱體112係於絕緣基板111上被絕緣構件118覆蓋。又,於絕緣構件118上形成有第1~第3電極113~115。絕緣構件118係為了將發熱體112之熱以良好效率往第1~第3電極113~115傳達而設置,由例如玻璃層所構成。發熱體112可藉由加熱第1~第3電極113~115使熔融導體易於凝集。 The heating element 112 is covered with an insulating member 118 on the insulating substrate 111. In addition, the first to third electrodes 113 to 115 are formed on the insulating member 118. The insulating member 118 is provided to transmit the heat of the heating element 112 to the first to third electrodes 113 to 115 with good efficiency, and is composed of, for example, a glass layer. The heating element 112 can easily agglomerate the molten conductor by heating the first to third electrodes 113 to 115.

第1~第3電極113~115係藉由Ag或Cu配線等之導電圖案形成。第1電極113,於一側中與第2電極114相鄰形成且被絕緣。於第 1電極113之另一側形成有第3電極115。第1電極113與第3電極115,藉由連接熔絲單元1而導通,構成短路元件110之電流路徑。又,第1電極113,係經由面對絕緣基板111側面之城堡形接點而與設於絕緣基板111之背面111b之第1外部連接電極113a連接。又,第2電極114,係經由面對絕緣基板111側面之城堡形接點而與設於絕緣基板111之背面111b之第2外部連接電極114a連接。 The first to third electrodes 113 to 115 are formed by conductive patterns such as Ag or Cu wiring. The first electrode 113 is formed adjacent to the second electrode 114 on one side and is insulated. Yudi The third electrode 115 is formed on the other side of the one electrode 113. The first electrode 113 and the third electrode 115 are electrically connected by connecting the fuse unit 1 to constitute a current path of the short-circuit element 110. In addition, the first electrode 113 is connected to the first external connection electrode 113a provided on the back surface 111b of the insulating substrate 111 via a castle-shaped contact facing the side surface of the insulating substrate 111. In addition, the second electrode 114 is connected to the second external connection electrode 114a provided on the back surface 111b of the insulating substrate 111 via a castellated contact facing the side surface of the insulating substrate 111.

又,第3電極115,係經由絕緣基板111或設於絕緣構件118之發熱體引出電極120而與發熱體112連接。又,發熱體112係經由發熱體電極121及面對絕緣基板111側緣之城堡形接點而與設於絕緣基板111之背面111b之發熱體供電電極121a連接。 The third electrode 115 is connected to the heating element 112 via the insulating substrate 111 or the heating element extraction electrode 120 provided on the insulating member 118. The heating element 112 is connected to the heating element power supply electrode 121a provided on the back surface 111b of the insulating substrate 111 via the heating element electrode 121 and the castle-shaped contact facing the side edge of the insulating substrate 111.

第1及第3電極113,115,係透過焊料等連接材料117而連接有熔絲單元1。如上所述,熔絲單元1,藉由具備高熔點金屬層2而提升了對高溫環境之耐性,因此構裝性優異,能在透過連接材料117被搭載於第1、第3電極113,115間後,藉由回焊焊接等容易地連接。此外,熔絲單元1,亦可將設於最下層之第1低熔點金屬層3或第2低熔點金屬層4作為連接材料使用,以連接於第1、第3電極113,115間。 The first and third electrodes 113 and 115 are connected to the fuse unit 1 through a connection material 117 such as solder. As described above, since the fuse unit 1 is provided with the high-melting-point metal layer 2, the resistance to high-temperature environments is improved, so it has excellent structural properties and can be mounted between the first and third electrodes 113 and 115 through the connection material 117 , Easy connection by reflow soldering, etc. In addition, the fuse unit 1 may also use the first low-melting-point metal layer 3 or the second low-melting-point metal layer 4 provided in the lowermost layer as a connecting material to connect between the first and third electrodes 113,115.

[助焊劑片] [Flux sheet]

又,短路元件110中,為了防止高熔點金屬層2或第1,第2低熔點金屬層3,4之氧化與除去熔斷時之氧化物及提升焊料之流動性,亦可於熔絲單元1之表面或背面塗布助焊劑。又,如圖20所示,亦可於熔絲單元1上最外層之全面配置助焊劑片122。助焊劑片122係與上述助焊劑片87同樣地,使流動體或半流動體之助焊劑含浸、保持於片狀之支撐體而成者,例 如使助焊劑含浸於不織布或篩網狀之布料而成者。 In addition, in the short-circuit element 110, in order to prevent the oxidation of the high-melting-point metal layer 2 or the first and second low-melting-point metal layers 3, 4 and to remove the oxide at the time of fusing and improve the fluidity of the solder, the fuse unit 1 Flux is applied on the surface or back surface. Furthermore, as shown in FIG. 20, the flux sheet 122 may be arranged on the entirety of the outermost layer on the fuse unit 1. The flux sheet 122 is formed by impregnating and holding the flux of the fluid or semi-fluid in a sheet-like support, similar to the flux sheet 87 described above, for example If the flux is impregnated with non-woven fabric or mesh fabric.

助焊劑片122,較佳為具有較熔絲單元1之表面積大之面積。藉此,熔絲單元1被助焊劑片122完全覆蓋,即使因熔融使體積膨脹時,亦可確實地實現藉助焊劑除去氧化物及藉濕潤性提升達成之速熔斷。 The flux sheet 122 preferably has a larger area than the surface area of the fuse unit 1. As a result, the fuse unit 1 is completely covered by the flux sheet 122, and even when the volume expands due to melting, it is possible to surely realize the rapid fusing achieved by removing oxides by the flux and improving wettability.

藉由配置助焊劑片122,於熔絲單元1之構裝時或短路元件110之構裝時之熱處理步驟中亦可將助焊劑保持於熔絲單元1之全面,於短路元件110之實際使用時,可提高第1,第2低熔點金屬層3,4(例如焊料)之濕潤性,且除去第1,第2低熔點金屬溶解期間之氧化物,使用對高熔點金屬(例如Ag)之侵蝕作用使速熔斷性提升。 By arranging the flux sheet 122, the flux can also be kept in the entirety of the fuse unit 1 during the heat treatment step when the fuse unit 1 is assembled or when the short-circuit element 110 is assembled, in actual use of the short-circuit element 110 Can improve the wettability of the first and second low-melting-point metal layers 3, 4 (such as solder), and remove the oxides during the dissolution of the first and second low-melting-point metals, using the high melting point metal (such as Ag) The erosion effect improves the fast fusing.

又,藉由配置助焊劑片122,即使於最外層之高熔點金屬層2之表面形成有以Sn作為主成分之無鉛焊料等氧化防止膜時,亦能除去該氧化防止膜之氧化物,有效地防止高熔點金屬層2之氧化,維持且提升速熔斷性。 Moreover, by arranging the flux sheet 122, even if an oxidation preventing film such as lead-free solder mainly composed of Sn is formed on the surface of the outermost refractory metal layer 2, the oxide of the oxidation preventing film can be removed, which is effective To prevent the oxidation of the high-melting-point metal layer 2 and maintain and improve the fast fusing.

此外,短路元件110,亦可取代助焊劑片122,如圖21所示,於熔絲單元1之最外層塗布助焊劑119a後,於助焊劑119a上配置不織布或篩網狀之布料,並使助焊劑119a含浸。又,短路元件110,亦可如圖22所示,取代助焊劑片而於熔絲單元1最外層之全面塗布混合有纖維狀物之助焊劑119b。助焊劑119b藉由混合有纖維狀物而能提高黏性,在高溫環境下亦不易流動,能於熔絲單元1全面謀求熔斷時之氧化物除去及濕潤性之提升。此外,作為混合於助焊劑119b之纖維狀物,可非常合適地使用例如不織布纖維、玻璃纖維等具備絕緣性、耐熱性之纖維。 In addition, the short-circuit element 110 can also replace the flux sheet 122. As shown in FIG. 21, after applying the flux 119a to the outermost layer of the fuse unit 1, a non-woven fabric or a mesh-like cloth is arranged on the flux 119a, and The flux 119a is impregnated. In addition, as shown in FIG. 22, the short-circuit element 110 may replace the flux sheet and apply the flux 119b mixed with the fibrous material to the entire outermost layer of the fuse unit 1. The flux 119b can improve the viscosity by mixing with fibrous materials, and it is not easy to flow in a high-temperature environment. The fuse unit 1 can comprehensively seek to remove oxides and improve wettability during fusing. In addition, as the fibrous material mixed with the flux 119b, for example, nonwoven fabric fibers, glass fibers, and other fibers having insulation and heat resistance can be suitably used.

此外,短路元件110中,較佳為第1電極113具有較第3電 極115大之面積。藉此,短路元件110能使更多之熔融導體凝集於第1,第2電極113,114上,使第1,第2電極113,114間確實地短路(圖24參照)。 In addition, in the short-circuit element 110, it is preferable that the first electrode 113 has a Very large area of 115. Thereby, the short-circuit element 110 can cause more molten conductors to condense on the first and second electrodes 113 and 114, and reliably short-circuit the first and second electrodes 113 and 114 (see FIG. 24).

又,第1~第3電極113,114,115雖能使用Cu或Ag等一般電極材料形成,但較佳為至少於第1,第2電極113,114之表面上藉由公知之鍍敷處理形成Ni/Au鍍敷、Ni/Pd鍍敷、Ni/Pd/Au鍍敷等之被膜129。藉此,能防止第1,第2電極113,114之氧化,確實地保持熔融導體。又,在將短路元件110回焊構裝之場合,能藉由連接熔絲單元1之焊料或形成熔絲單元1外層之第1或第2低熔點金屬層3,4熔融而防止將第1電極113熔蝕(焊料沖蝕)。 In addition, although the first to third electrodes 113, 114, 115 can be formed using general electrode materials such as Cu or Ag, it is preferably formed at least on the surfaces of the first and second electrodes 113, 114 by a well-known plating process by Ni/Au plating , Ni/Pd plating, Ni/Pd/Au plating and other coatings 129. Thereby, the oxidation of the first and second electrodes 113, 114 can be prevented, and the molten conductor can be reliably maintained. In addition, when the short-circuit element 110 is reflowed, the first or second low-melting-point metal layers 3 and 4 forming the outer layer of the fuse unit 1 can be prevented from melting by connecting the solder of the fuse unit 1 or the outer layer of the fuse unit 1. The electrode 113 is eroded (solder erosion).

又,於第1~第3電極113~115形成有防止上述熔絲單元1之熔融導體或熔絲單元1之連接材料117流出之由玻璃等絕緣材料構成之流出防止部126。 In addition, the first to third electrodes 113 to 115 are formed with an outflow preventing portion 126 made of an insulating material such as glass that prevents the molten conductor of the fuse unit 1 or the connection material 117 of the fuse unit 1 from flowing out.

[覆蓋構件] [Cover member]

又,短路元件110,於設有熔絲單元1之絕緣基板111之表面111a上安裝有保護內部且防止熔融之熔絲單元1飛散之覆蓋構件116。覆蓋構件116,能藉由各種工程塑膠、陶瓷等具有絕緣性之構件形成。短路元件110中,由於熔絲單元1係被覆蓋構件116覆蓋,因此熔融金屬被覆蓋構件116捕捉而能防止往周圍飛散。 In addition, the short-circuit element 110 is provided with a cover member 116 on the surface 111a of the insulating substrate 111 provided with the fuse unit 1 to protect the inside and prevent the molten fuse unit 1 from scattering. The covering member 116 can be formed by insulating members such as various engineering plastics and ceramics. In the short-circuit element 110, since the fuse unit 1 is covered by the covering member 116, the molten metal is caught by the covering member 116 and can be prevented from flying around.

又,覆蓋構件116具有從頂面116a往絕緣基板111延伸至至少助焊劑片122之側面之突起部116b。覆蓋構件116,由於藉由突起部116b,而使助焊劑片122之側面之移動受到限制,因此能防止助焊劑片122之位置偏移。亦即,突起部116b,係相較於助焊劑片122之大小以保持既 定空隙之大小,對應應保持助焊劑片122之位置而設置。此外,突起部116b,亦可作成旋繞助焊劑片122側面並加以覆蓋之壁面,亦可為局部突起者。 In addition, the covering member 116 has a protrusion 116b extending from the top surface 116a toward the insulating substrate 111 to at least the side surface of the flux sheet 122. The covering member 116 restricts the movement of the side surface of the flux sheet 122 by the protrusion 116b, so that the position of the flux sheet 122 can be prevented from shifting. That is, the protrusion 116b is compared to the size of the flux sheet 122 to maintain both The size of the gap is set corresponding to the position where the flux sheet 122 should be kept. In addition, the protruding portion 116b may be formed as a wall surface that is wound around the side surface of the flux sheet 122 and covered, or may be a partial protrusion.

又,覆蓋構件116,係於助焊劑片122與頂面116a之間相隔既定間隔之構成。之所以作成此構成,係因在熔絲單元1熔融時,必須具有熔融之熔絲單元1將助焊劑片122往上壓之空隙之故。 In addition, the covering member 116 is constituted by a predetermined interval between the flux sheet 122 and the top surface 116a. The reason for this configuration is that when the fuse unit 1 is melted, it is necessary to have a gap where the melted fuse unit 1 presses the flux sheet 122 upward.

是以,覆蓋構件116中,覆蓋構件116之內部空間之高度(至頂面116a為止之高度),係構成為較絕緣基板111之表面111a上之熔融之熔絲單元1之高度與助焊劑片122之厚度之和還大。 Therefore, in the covering member 116, the height of the inner space of the covering member 116 (the height up to the top surface 116a) is configured to be higher than the height of the molten fuse unit 1 on the surface 111a of the insulating substrate 111 and the flux sheet The sum of the thickness of 122 is still large.

[短路元件電路] [Short circuit of element]

如以上之短路元件110,具有如圖23(A)(B)所示之電路構成。亦即,短路元件110,構成第1電極113與第2電極114在正常時係被絕緣(圖23(A)),而在藉由發熱體112之發熱使熔絲單元1熔融時,即透過該熔融導體短路之開關123(圖23(B))。又,第1外部連接電極113a與第2外部連接電極114a構成開關123之兩端子。又,熔絲單元1係透過第3電極115及發熱體引出電極120而與發熱體112連接。 The short-circuit element 110 as described above has a circuit configuration as shown in FIGS. 23(A)(B). That is, the short-circuit element 110 constituting the first electrode 113 and the second electrode 114 is normally insulated (FIG. 23(A)), and when the fuse unit 1 is melted by the heat of the heating element 112, it passes through The switch 123 where the molten conductor is short-circuited (FIG. 23(B)). In addition, the first external connection electrode 113 a and the second external connection electrode 114 a constitute both terminals of the switch 123. In addition, the fuse unit 1 is connected to the heating element 112 through the third electrode 115 and the heating element extraction electrode 120.

又,短路元件110,藉由組裝於電子機器等,開關123之兩端子113a,114a與該電子機器之電流路徑連接,在使該電流路徑導通時係使開關123短路,形成該電子零件之電流路徑。 Also, the short-circuit element 110 is assembled in an electronic device, etc., and the two terminals 113a, 114a of the switch 123 are connected to the current path of the electronic device, and when the current path is turned on, the switch 123 is short-circuited to form a current of the electronic component path.

例如,短路元件110中,設於電子零件之電流路徑上之電子零件與開關123之兩端子113a,114a並聯,若並聯之電子零件產生異常,則會對發熱體供電電極121a與第1外部連接電極113a間供應電力,藉由發熱體112通電而發熱。在藉由此熱使熔絲單元1熔融後,熔融導體即如圖24 所示凝集於第1,第2電極113,114上。由於第1,第2電極113,114係相鄰形成,因此凝集於第1,第2電極113,114上之熔融導體結合,藉此使第1,第2電極113,114短路。亦即,短路元件110中,開關123之兩端子間短路(圖23(B)),形成繞過已產生異常之電子零件之旁通電流路徑。此外,由於藉由熔絲單元1熔斷而熔斷第1,第3電極113,115間,因此對發熱體112之供電亦停止。 For example, in the short-circuit element 110, the electronic component provided on the current path of the electronic component is connected in parallel with the two terminals 113a, 114a of the switch 123. If the parallel electronic component is abnormal, the power supply electrode 121a is connected to the first external Electricity is supplied between the electrodes 113a, and the heating element 112 is energized to generate heat. After the fuse unit 1 is melted by this heat, the molten conductor is as shown in FIG. 24 As shown, it aggregates on the first and second electrodes 113,114. Since the first and second electrodes 113, 114 are formed adjacent to each other, the molten conductors aggregated on the first and second electrodes 113, 114 are combined, thereby short-circuiting the first and second electrodes 113, 114. That is, in the short-circuit element 110, the two terminals of the switch 123 are short-circuited (FIG. 23(B)), forming a bypass current path that bypasses the electronic component that has generated an abnormality. In addition, since the first and third electrodes 113 and 115 are fused by the fuse unit 1 being fused, the power supply to the heating element 112 is also stopped.

此時,熔絲單元1如上所述,由於積層有熔點低於高熔點金屬層2之第1低熔點金屬層3及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,因此從第2低熔點金屬層4之熔點開始熔融,而開始侵蝕高熔點金屬層2。是以,熔絲單元1,能藉由利用第1,第2低熔點金屬層3,4對高熔點金屬層2之侵蝕作用,高熔點金屬層2以低於熔融溫度之溫度被熔融,迅速熔斷。 At this time, the fuse unit 1 has the first low melting point metal layer 3 having a melting point lower than the high melting point metal layer 2 and the second low melting point metal layer 4 having a melting point lower than the first low melting point metal layer 3 as described above. Therefore, the melting point of the second low-melting-point metal layer 4 starts to melt, and the high-melting-point metal layer 2 begins to erode. Therefore, the fuse unit 1 can use the erosion of the first and second low-melting-point metal layers 3 and 4 to the high-melting-point metal layer 2, the high-melting-point metal layer 2 is melted at a temperature lower than the melting temperature, and quickly Fuse.

[短路元件之變形例] [Modification of short-circuit element]

此外,短路元件110,不一定要由絕緣構件118覆蓋發熱體112,亦可將發熱體112設置於絕緣基板111之內部。藉由使用熱傳導性優異之物作為絕緣基板111之材料,而能與透過玻璃層等絕緣構件118時同等地加熱發熱體112。 In addition, the short-circuit element 110 does not necessarily need to cover the heating element 112 with the insulating member 118, and the heating element 112 may be disposed inside the insulating substrate 111. By using an object having excellent thermal conductivity as the material of the insulating substrate 111, the heating element 112 can be heated in the same way as when passing through the insulating member 118 such as a glass layer.

又,短路元件110,除了如上所述將發熱體112形成於絕緣基板111上之第1~第3電極113~115形成面側以外,亦可將發熱體112設置於絕緣基板111之與第1~第3電極113~115之形成面相反之面。藉由將發熱體112形成於絕緣基板111之背面111b,而能以較形成於絕緣基板111內簡易之步驟形成。此外,此情形下,若於發熱體112上形成絕緣構 件118,則在電阻體之保護或構裝時之絕緣性確保的方面較佳。 In addition, in the short-circuit element 110, in addition to forming the heating element 112 on the insulating substrate 111 on the surface of the first to third electrodes 113 to 115 as described above, the heating element 112 may be provided on the insulating substrate 111 and the first ~The third electrode 113~115 is formed on the opposite surface. By forming the heating element 112 on the back surface 111b of the insulating substrate 111, it can be formed in a simpler process than in the insulating substrate 111. In addition, in this case, if an insulating structure is formed on the heating element 112 The component 118 is preferable in terms of protection of the resistor or insulation during assembly.

再者,短路元件110中,亦可發熱體112設置於絕緣基板111之第1~第3電極113~115之形成面上,且與第1~第3電極113~115併設。藉由將發熱體112形成於絕緣基板111之表面,而能以較形成於絕緣基板111內簡易之步驟形成。此外,此情形下亦同樣地,較佳為於發熱體112上形成絕緣構件118。 In addition, in the short-circuit element 110, the heating element 112 may be provided on the formation surface of the first to third electrodes 113 to 115 of the insulating substrate 111, and be provided in parallel with the first to third electrodes 113 to 115. By forming the heating element 112 on the surface of the insulating substrate 111, it can be formed in a simpler process than in the insulating substrate 111. In addition, in this case as well, it is preferable to form the insulating member 118 on the heating element 112.

[第4電極、第2熔絲單元] [Fourth electrode, second fuse unit]

又,本發明之短路元件,亦可如圖25(A)(B)所示,形成跨與第2電極114相鄰之第4電極124及第2,第4電極114,124間而被搭載之第2熔絲單元125。第2熔絲單元125具有與熔絲單元1相同之構成。 In addition, the short-circuit element of the present invention may be formed as shown in FIGS. 25(A) and (B) to form the fourth electrode 124 and the second and fourth electrodes 114 and 124 which are adjacent to the second electrode 114 and are mounted therebetween. 2fused fuse unit 125. The second fuse unit 125 has the same configuration as the fuse unit 1.

又,短路元件110,亦可如圖25(B)所示將助焊劑片122跨載於熔絲單元1及第2熔絲單元125上,亦可如圖25(C)所示,分別搭載於熔絲單元1與第2熔絲單元125。或者,短路元件110,亦可如圖25(D)所示,於熔絲單元1與第2熔絲單元125之各個塗布助焊劑119a後,將不織布或篩網狀之布料跨載於熔絲單元1及第2熔絲單元125上,或亦可如圖25(E)所示,將不織布或篩網狀之布料分別搭載於熔絲單元1與第2熔絲單元125。再者,短路元件110,亦可如圖25(F)所示,於熔絲單元1及第2熔絲單元125之各個塗布混合有纖維狀物且黏性提高之助焊劑119b。 In addition, the short-circuit element 110 may be mounted on the fuse unit 1 and the second fuse unit 125 as shown in FIG. 25(B), or may be mounted separately as shown in FIG. 25(C). For the fuse unit 1 and the second fuse unit 125. Alternatively, as shown in FIG. 25(D), after applying the flux 119a to each of the fuse unit 1 and the second fuse unit 125 as shown in FIG. 25(D), the non-woven fabric or mesh-like fabric is loaded across the fuse On the unit 1 and the second fuse unit 125, as shown in FIG. 25(E), non-woven fabric or mesh-like fabric may be mounted on the fuse unit 1 and the second fuse unit 125, respectively. Furthermore, as shown in FIG. 25(F), the short-circuit element 110 may be coated with a flux 119b in which the fibrous material is mixed and the viscosity of the fuse unit 1 and the second fuse unit 125 is improved.

此短路元件110中,藉由熔絲單元1及第2熔絲單元125熔融,該熔融導體於第1,第2電極113,114間濕潤擴散,而使第1,第2電極113,114短路。圖25所示之短路元件110,由於除了設有第4電極124及第2熔絲單元125以外,其餘則與上述構成相同,因此係賦予相同符號,省略 詳細說明。 In this short-circuit element 110, the fuse unit 1 and the second fuse unit 125 melt, and the molten conductor wets and diffuses between the first and second electrodes 113, 114 to short-circuit the first and second electrodes 113, 114. The short-circuit element 110 shown in FIG. 25 is the same as the above structure except that the fourth electrode 124 and the second fuse unit 125 are provided, so the same reference numerals are given and omitted. Detailed description.

圖25所示之短路元件110中亦同樣地,第1,第2電極113,114較佳為具有較第3,第4電極115,124大之面積。藉此,短路元件110能使更多之熔融導體凝集於第1,第2電極113,114上,而能使第1,第2電極113,114間確實地短路。 Similarly in the short-circuit element 110 shown in FIG. 25, the first and second electrodes 113 and 114 preferably have a larger area than the third and fourth electrodes 115 and 124. Thereby, the short-circuit element 110 can cause more molten conductors to condense on the first and second electrodes 113, 114, and can surely short-circuit the first and second electrodes 113, 114.

[切換元件] [Switching element]

其次,說明使用熔絲單元1之切換元件。於圖26(A)顯示切換元件130之俯視圖,於圖26(B)顯示切換元件130之剖面圖。切換元件130具備:絕緣基板131、設於絕緣基板131之第1發熱體132及第2發熱體133、於絕緣基板131彼此相鄰設置之第1電極134及第2電極135、與第1電極134相鄰設置且電性連接於第1發熱體132之第3電極136、與第2電極135相鄰設置且電性連接於第2發熱體133之第4電極137、與第4電極137相鄰設置之第5電極138、藉由跨第1,第3電極134,136間設置而構成電流路徑且藉由來自第1發熱體132之加熱熔斷第1,第3電極134,136間之電流路徑的第1熔絲單元1A、以及從第2電極135經由第4電極137跨至第5電極138而設置且藉由來自第2發熱體133之加熱熔斷第2,第4,第5電極135,137,138間之電流路徑的第2熔絲單元1B。接著,切換元件130,係於絕緣基板131上安裝有保護內部之覆蓋構件139。 Next, the switching element using the fuse unit 1 will be described. The top view of the switching element 130 is shown in FIG. 26(A), and the cross-sectional view of the switching element 130 is shown in FIG. 26(B). The switching element 130 includes an insulating substrate 131, a first heating element 132 and a second heating element 133 provided on the insulating substrate 131, a first electrode 134 and a second electrode 135 provided adjacent to each other on the insulating substrate 131, and a first electrode 134 is arranged adjacent to and electrically connected to the third electrode 136 of the first heating element 132, adjacent to the second electrode 135 and electrically connected to the fourth electrode 137 of the second heating element 133, and the fourth electrode 137 The fifth electrode 138 adjacent to the first electrode 134, 136 is provided between the first and third electrodes to form a current path, and the first and third electrodes 134, 136 are fused by heating from the first heating element 132. The fuse unit 1A and the second electrode 135 are installed across the fourth electrode 137 to the fifth electrode 138, and the current path between the second, fourth, and fifth electrodes 135, 137, and 138 is fused by heating from the second heating element 133. The second fuse unit 1B. Next, the switching element 130 is mounted on the insulating substrate 131 with a cover member 139 protecting the inside.

絕緣基板131係使用例如氧化鋁、玻璃陶瓷、莫來石、及氧化鋯等具有絕緣性之構件形成為方形。除此之外,絕緣基板131亦可使用玻璃環氧基板、苯酚基板等用於印刷配線基板的材料。 The insulating substrate 131 is formed into a square shape using insulating members such as alumina, glass ceramics, mullite, and zirconia. In addition, as the insulating substrate 131, a material such as a glass epoxy substrate, a phenol substrate, or the like for printed wiring boards may be used.

第1,第2發熱體132,133與上述發熱體93同樣地,係具有 通電則發熱之導電性之構件,能與發熱體93同樣地形成。又,第1,第2熔絲單元1A,1B具有上述之熔絲單元1相同之構成。 The first and second heating elements 132, 133 are similar to the heating element 93 described above, and have A conductive member that generates heat when energized can be formed in the same manner as the heating element 93. In addition, the first and second fuse units 1A and 1B have the same configuration as the fuse unit 1 described above.

又,第1,第2發熱體132,133,係於絕緣基板131上被絕緣構件140覆蓋。於覆蓋第1發熱體132之絕緣構件140上形成有第1,第3電極134,136,於覆蓋第2發熱體133之絕緣構件140上形成有第2,第4,第5電極135,137,138。第1電極134,於一側中與第2電極135相鄰形成且被絕緣。於第1電極134之另一側形成有第3電極136。第1電極134與第3電極135,藉由連接第1熔絲單元1A而導通,構成切換元件130之電流路徑。又,第1電極134,係經由面對絕緣基板131側面之城堡形接點而與設於絕緣基板131之背面131b之第1外部連接電極134a連接。 In addition, the first and second heating elements 132 and 133 are covered on the insulating substrate 131 and covered with the insulating member 140. The first and third electrodes 134, 136 are formed on the insulating member 140 covering the first heating element 132, and the second, fourth, and fifth electrodes 135, 137, 138 are formed on the insulating member 140 covering the second heating element 133. The first electrode 134 is formed adjacent to the second electrode 135 on one side and is insulated. A third electrode 136 is formed on the other side of the first electrode 134. The first electrode 134 and the third electrode 135 are electrically connected by connecting the first fuse unit 1A, and constitute a current path of the switching element 130. In addition, the first electrode 134 is connected to the first external connection electrode 134a provided on the back surface 131b of the insulating substrate 131 via a castle-shaped contact facing the side surface of the insulating substrate 131.

又,第3電極136係經由絕緣基板131或設於絕緣構件140之第1發熱體引出電極141而與第1發熱體132連接。又,第1發熱體132係經由第1發熱體電極142及面對絕緣基板131側緣之城堡形接點而與設於絕緣基板131之背面131b之第1發熱體供電電極142a連接。 The third electrode 136 is connected to the first heating element 132 via the insulating substrate 131 or the first heating element extraction electrode 141 provided on the insulating member 140. In addition, the first heating element 132 is connected to the first heating element feeding electrode 142a provided on the back surface 131b of the insulating substrate 131 via the first heating element electrode 142 and the castle-shaped contact facing the side edge of the insulating substrate 131.

於第2電極135之與第1電極134相鄰之一側相反之另一側形成有第4電極137。又,於第4電極137之與第2電極135相鄰之一側相反之另一側形成有第5電極138。第2電極135、第4電極137及第5電極138係與第2熔絲單元1B連接。又,第2電極135係經由面對絕緣基板131側面之城堡形接點而與設於絕緣基板131之背面131b之第2外部連接電極135a連接。 A fourth electrode 137 is formed on the other side of the second electrode 135 opposite to the side adjacent to the first electrode 134. In addition, a fifth electrode 138 is formed on the other side of the fourth electrode 137 opposite to the side adjacent to the second electrode 135. The second electrode 135, the fourth electrode 137, and the fifth electrode 138 are connected to the second fuse unit 1B. In addition, the second electrode 135 is connected to the second external connection electrode 135a provided on the back surface 131b of the insulating substrate 131 via a castle-shaped contact facing the side of the insulating substrate 131.

又,第4電極137,係經由絕緣基板131或設於絕緣構件140之第2發熱體引出電極143而與第2發熱體133連接。又,第2發熱體133 係經由第2發熱體電極144及面對絕緣基板131側緣之城堡形接點而與設於絕緣基板131之背面131b之第2發熱體供電電極144a連接。 The fourth electrode 137 is connected to the second heating element 133 via the insulating substrate 131 or the second heating element extraction electrode 143 provided on the insulating member 140. In addition, the second heating element 133 The second heating element power supply electrode 144a provided on the back surface 131b of the insulating substrate 131 is connected to the second heating element electrode 144 and the castellated contact facing the side edge of the insulating substrate 131.

再者,第5電極138係經由面對絕緣基板131側面之城堡形接點而與設於絕緣基板131背面之第5外部連接電極138a連接。 Furthermore, the fifth electrode 138 is connected to the fifth external connection electrode 138a provided on the back surface of the insulating substrate 131 via a castle-shaped contact facing the side of the insulating substrate 131.

切換元件130中,從第1電極134跨至第3電極136而連接第1熔絲單元1A,從第2電極135經由第4電極137跨至第5電極138而連接第2熔絲單元1B。第1,第2熔絲單元1A,1B係與上述熔絲單元1同樣地,由於藉由具備高熔點金屬層2而提升了對高溫環境之耐性,因此構裝性優異,能在透過焊料等連接材料145被搭載於第1~第5電極134~138上後,藉由回焊焊接等容易地連接。此外,熔絲單元1A,1B,亦可將設於最下層之第1低熔點金屬層3或第2低熔點金屬層4作為連接材料使用,以連接於第1~第5電極134~138上。 In the switching element 130, the first fuse unit 1A is connected from the first electrode 134 to the third electrode 136, and the second fuse unit 1B is connected from the second electrode 135 to the fifth electrode 138 via the fourth electrode 137. The first and second fuse units 1A, 1B are similar to the above-mentioned fuse unit 1 because the high-melting-point metal layer 2 improves the resistance to high-temperature environments, so the structure is excellent and can pass through solder etc. After the connection material 145 is mounted on the first to fifth electrodes 134 to 138, it is easily connected by reflow soldering or the like. In addition, the fuse units 1A, 1B can also use the first low-melting-point metal layer 3 or the second low-melting-point metal layer 4 provided in the lowermost layer as a connecting material to connect to the first to fifth electrodes 134 to 138 .

[助焊劑片] [Flux sheet]

又,切換元件130中,為了防止高熔點金屬層2或第1,第2低熔點金屬層3,4之氧化與除去熔斷時之氧化物及提升焊料之流動性,亦可於熔絲單元1之表面或背面塗布助焊劑。又,如圖26所示,亦可於熔絲單元1A,1B上最外層之全面配置助焊劑片146。助焊劑片146係與上述助焊劑片87同樣地,使流動體或半流動體之助焊劑含浸、保持於片狀之支撐體而成者,例如使助焊劑含浸於不織布或篩網狀之布料而成者。 In addition, in the switching element 130, in order to prevent the oxidation of the high-melting-point metal layer 2 or the first and second low-melting-point metal layers 3, 4 and to remove the oxide at the time of fusing and improve the fluidity of the solder, the fuse unit 1 Flux is applied on the surface or back surface. Furthermore, as shown in FIG. 26, the flux sheet 146 may be arranged on the entirety of the outermost layer on the fuse units 1A, 1B. The flux sheet 146 is the same as the flux sheet 87 described above, in which the flux of the fluid or semi-fluid is impregnated and held in a sheet-like support, for example, the flux is impregnated into a non-woven fabric or a mesh-like fabric Successor.

助焊劑片146,較佳為具有較熔絲單元1A,1B之表面積大之面積。藉此,熔絲單元1A,1B被助焊劑片146完全覆蓋,即使因熔融使體積膨脹時,亦可確實地實現藉助焊劑除去氧化物及藉濕潤性提升達成之速 熔斷。 The flux sheet 146 preferably has an area larger than that of the fuse units 1A and 1B. Thereby, the fuse units 1A, 1B are completely covered by the flux sheet 146, and even when the volume is expanded due to melting, the speed of removing oxides by the flux and improving wettability can be reliably achieved Fuse.

藉由配置助焊劑片146,於熔絲單元1之構裝時或切換元件130之構裝時之熱處理步驟中亦可將助焊劑保持於熔絲單元1A,1B之全面,於切換元件130之實際使用時,可提高第1,第2低熔點金屬層3,4(例如焊料)之濕潤性,且除去第1,第2低熔點金屬溶解期間之氧化物,使用對高熔點金屬(例如Ag)之侵蝕作用使速熔斷性提升。 By arranging the flux sheet 146, the flux can also be kept in the entirety of the fuse units 1A, 1B during the heat treatment step when the fuse unit 1 is assembled or when the switching element 130 is assembled. In actual use, the wettability of the first and second low-melting-point metal layers 3, 4 (such as solder) can be improved, and the oxides during the dissolution of the first and second low-melting-point metals can be removed. ) The erosive effect improves the fast fusing.

又,藉由配置助焊劑片146,即使於最外層之高熔點金屬層2之表面形成有以Sn作為主成分之無鉛焊料等氧化防止膜時,亦能除去該氧化防止膜之氧化物,有效地防止高熔點金屬層2之氧化,維持且提升速熔斷性。 Moreover, by arranging the flux sheet 146, even if an oxidation preventing film such as lead-free solder mainly composed of Sn is formed on the surface of the outermost refractory metal layer 2, the oxide of the oxidation preventing film can be removed, which is effective To prevent the oxidation of the high-melting-point metal layer 2 and maintain and improve the fast fusing.

此外,切換元件130,亦可取代助焊劑片146,如圖27所示,於熔絲單元1A,1B之最外層塗布助焊劑148a後,於助焊劑148a上配置不織布或篩網狀之布料,並使助焊劑148a含浸。又,切換元件130,亦可如圖28所示,取代助焊劑片而於熔絲單元1A,1B最外層之全面塗布混合有纖維狀物之助焊劑148b。助焊劑148b藉由混合有纖維狀物而能提高黏性,在高溫環境下亦不易流動,能於熔絲單元1A,1B全面謀求熔斷時之氧化物除去及濕潤性之提升。此外,作為混合於助焊劑148b之纖維狀物,可非常合適地使用例如不織布纖維、玻璃纖維等具備絕緣性、耐熱性之纖維。 In addition, the switching element 130 can also replace the flux sheet 146. As shown in FIG. 27, after applying the flux 148a to the outermost layer of the fuse units 1A, 1B, a non-woven fabric or mesh-like fabric is arranged on the flux 148a. And the flux 148a is impregnated. Moreover, as shown in FIG. 28, the switching element 130 may replace the flux sheet and apply the flux 148b mixed with the fibrous material to the entire outermost layer of the fuse units 1A, 1B. The flux 148b can improve the viscosity by mixing with fibrous materials, and it is not easy to flow in a high-temperature environment. It can fully remove oxides and improve wettability in the fuse unit 1A, 1B. In addition, as the fibrous material mixed with the flux 148b, a fiber having insulation and heat resistance such as non-woven fiber and glass fiber can be very suitably used.

此時,切換元件130,亦可將助焊劑片146跨載於熔絲單元1A及熔絲單元1B上,亦可分別搭載於熔絲單元1A與熔絲單元1B。或者,切換元件130,亦可於熔絲單元1A與熔絲單元1B之各個塗布助焊劑148a後,將不織布或篩網狀之布料跨載於熔絲單元1A及熔絲單元1B上,或亦 可將不織布或篩網狀之布料分別搭載於熔絲單元1A與熔絲單元1B。再者,切換元件130,亦可於熔絲單元1A及熔絲單元1B之各個塗布混合有纖維狀物且黏性提高之助焊劑148b。 At this time, the switching element 130 may straddle the flux sheet 146 on the fuse unit 1A and the fuse unit 1B, or may be mounted on the fuse unit 1A and the fuse unit 1B, respectively. Alternatively, the switching element 130 may apply the flux 148a to each of the fuse unit 1A and the fuse unit 1B, and then load the non-woven fabric or mesh-like fabric across the fuse unit 1A and the fuse unit 1B, or Non-woven fabric or mesh-like fabric can be mounted on the fuse unit 1A and the fuse unit 1B, respectively. Furthermore, the switching element 130 may also be coated with a flux 148b in which a fibrous material is mixed and has improved viscosity on each of the fuse unit 1A and the fuse unit 1B.

此外,第1~第5電極134,135,136,137,138,雖能使用Cu或Ag等一般電極材料形成,但較佳為至少於第1,第2電極134,135之表面上藉由公知之鍍敷處理形成Ni/Au鍍敷、Ni/Pd鍍敷、Ni/Pd/Au鍍敷等之被膜149。藉此,能防止第1,第2電極134,135之氧化,確實地保持熔融導體。又,在將切換元件130回焊構裝之場合,能藉由連接熔絲單元1A,1B之焊料或形成熔絲單元1A,1B外層之低熔點金屬熔融而防止將第1電極、第2電極134,135熔蝕(焊料沖蝕)。 In addition, although the first to fifth electrodes 134, 135, 136, 137, 138 can be formed using common electrode materials such as Cu or Ag, it is preferably formed at least on the surfaces of the first and second electrodes 134, 135 by a well-known plating process by Ni/Au plating Coating 149 such as coating, Ni/Pd plating, Ni/Pd/Au plating, etc. Thereby, the oxidation of the first and second electrodes 134, 135 can be prevented, and the molten conductor can be reliably maintained. In addition, when the switching element 130 is reflowed, it is possible to prevent the first electrode and the second electrode from being melted by the solder connecting the fuse units 1A, 1B or the low-melting-point metal forming the outer layers of the fuse units 1A, 1B. 134,135 erosion (solder erosion).

又,於第1~第5電極134~138形成有防止上述熔絲單元1A,1B之熔融導體或熔絲單元1A,1B之連接材料145流出之由玻璃等絕緣材料構成之流出防止部147。 In addition, the first to fifth electrodes 134 to 138 are formed with an outflow preventing portion 147 made of an insulating material such as glass that prevents the molten conductor of the fuse units 1A, 1B or the connection material 145 of the fuse units 1A, 1B from flowing out.

[覆蓋構件] [Cover member]

又,切換元件130,於設有熔絲單元1A,1B之絕緣基板131之表面131a上安裝有保護內部且防止熔融之熔絲單元1A,1B飛散之覆蓋構件139。覆蓋構件139,能藉由各種工程塑膠、陶瓷等具有絕緣性之構件形成。切換元件130中,由於熔絲單元1A,1B係被覆蓋構件139覆蓋,因此熔融金屬被覆蓋構件139捕捉而能防止往周圍飛散。 Moreover, the switching element 130 is provided with a cover member 139 on the surface 131a of the insulating substrate 131 provided with the fuse units 1A, 1B to protect the inside and prevent the fuse units 1A, 1B from melting. The covering member 139 can be formed by insulating members such as various engineering plastics and ceramics. In the switching element 130, since the fuse units 1A and 1B are covered by the covering member 139, the molten metal is caught by the covering member 139 and can be prevented from flying around.

又,覆蓋構件139具有從頂面139a往絕緣基板131延伸至至少助焊劑片146之側面之突起部139b。覆蓋構件139,由於藉由突起部139b,而使助焊劑片146之側面之移動受到限制,因此能防止助焊劑片146 之位置偏移。亦即,突起部139b,係相較於助焊劑片146之大小以保持既定空隙之大小,對應應保持助焊劑片146之位置而設置。此外,突起部139b,亦可作成旋繞助焊劑片146側面並加以覆蓋之壁面,亦可為局部突起者。 In addition, the covering member 139 has a protrusion 139b extending from the top surface 139a toward the insulating substrate 131 to at least the side surface of the flux sheet 146. Since the covering member 139 restricts the movement of the side surface of the flux sheet 146 by the protrusion 139b, the flux sheet 146 can be prevented The position is offset. That is, the protruding portion 139b is compared with the size of the flux piece 146 to maintain the size of the predetermined gap, and is provided corresponding to the position where the flux piece 146 should be maintained. In addition, the protruding portion 139b may be formed as a wall surface that is wound around the side surface of the flux sheet 146 and covered, or may be a partially protruding portion.

又,覆蓋構件139,係於助焊劑片146與頂面139a之間相隔既定間隔之構成。之所以作成此構成,係因在熔絲單元1A,1B熔融時,必須具有熔融之熔絲單元1A,1B將助焊劑片146往上壓之空隙之故。 In addition, the covering member 139 is constituted by a predetermined interval between the flux sheet 146 and the top surface 139a. The reason for this configuration is that when the fuse units 1A and 1B are melted, there must be a gap where the melted fuse units 1A and 1B press the flux sheet 146 upward.

是以,覆蓋構件139中,覆蓋構件139之內部空間之高度(至頂面139a為止之高度),係構成為較絕緣基板131之表面131a上之熔融之熔絲單元1A,1B之高度與助焊劑片146之厚度之和還大。 Therefore, in the covering member 139, the height of the inner space of the covering member 139 (the height up to the top surface 139a) is configured to be higher than the height of the melted fuse units 1A, 1B on the surface 131a of the insulating substrate 131. The total thickness of the solder pieces 146 is still large.

[切換元件電路] [Switching element circuit]

如以上之切換元件130,具有如圖29所示之電路構成。亦即,切換元件130,構成第1電極134與第2電極135在正常時被絕緣,而在藉由第1,第2發熱體132,133之發熱使第1,第2熔絲單元1A,1B熔融時,即透過該熔融導體短路之開關150。又,第1外部連接電極134a與第2外部連接電極135a構成開關150之兩端子。 The switching element 130 as described above has the circuit configuration shown in FIG. 29. That is, the switching element 130 constituting the first electrode 134 and the second electrode 135 is normally insulated, and the first and second fuse units 1A, 1B are melted by the heating of the first and second heating elements 132, 133 At this time, the switch 150 short-circuited through the molten conductor. In addition, the first external connection electrode 134 a and the second external connection electrode 135 a constitute two terminals of the switch 150.

又,第1熔絲單元1A係經由第3電極136及第1發熱體引出電極141而與第1發熱體132連接。第2熔絲單元1B係經由第4電極137及第2發熱體引出電極143而與第2發熱體133連接,進而經由第2發熱體電極144而與第2發熱體供電電極144a連接。亦即,第2熔絲單元1B及連接第2熔絲單元1B之第2電極135、第4電極137及第5電極138,係作為在切換元件130之作動前透過第2熔絲單元1B使第2電極135與第5電極138之間導通,藉由熔斷第2熔絲單元1B而遮斷第2電極135與第5電極 138之間的保護元件發揮功能。 In addition, the first fuse unit 1A is connected to the first heating element 132 via the third electrode 136 and the first heating element extraction electrode 141. The second fuse unit 1B is connected to the second heating element 133 via the fourth electrode 137 and the second heating element extraction electrode 143, and is further connected to the second heating element feeding electrode 144a via the second heating element electrode 144. That is, the second fuse unit 1B and the second electrode 135, the fourth electrode 137, and the fifth electrode 138 connected to the second fuse unit 1B are used to pass through the second fuse unit 1B before the operation of the switching element 130 The second electrode 135 and the fifth electrode 138 are electrically connected, and the second electrode 135 and the fifth electrode are blocked by blowing the second fuse unit 1B The protection element between 138 functions.

接著,切換元件130,在從第2發熱體供電電極144a使第2發熱體133通電後,即如圖30所示,藉由第2發熱體133之發熱使第2熔絲單元1B熔融,而分別凝集於第2,第4,第5電極135,137,138。藉此經由第2熔絲單元1B而連接之跨第2電極135與第5電極138的電流路徑被遮斷。又,切換元件130,在從第1發熱體供電電極142a使第1發熱體132通電後,即藉由第1發熱體132之發熱使第1熔絲單元1A熔融,而分別凝集於第1,第3電極134,136。藉此,切換元件130如圖31(A)(B)所示,藉由凝集於第1電極134與第2電極135之第1,第2熔絲單元1A,1B之熔融導體結合,而使絕緣中之第1電極134與第2電極135短路。亦即切換元件130係使開關150短路,而能將跨第2,第5電極135,138間之電流路徑切換至跨第1,第2電極134,135間之電流路徑(圖32)。 Next, after the switching element 130 energizes the second heating element 133 from the second heating element feeding electrode 144a, that is, as shown in FIG. 30, the second fuse unit 1B is melted by the heat of the second heating element 133, and Aggregated at the second, fourth, and fifth electrodes 135, 137, and 138, respectively. As a result, the current path across the second electrode 135 and the fifth electrode 138 connected via the second fuse unit 1B is blocked. In addition, after the switching element 130 energizes the first heating element 132 from the first heating element feeding electrode 142a, that is, the first fuse unit 1A is melted by the heat of the first heating element 132 and condenses on the first, The third electrode 134,136. As a result, as shown in FIGS. 31(A) and (B), the switching element 130 is combined with the melted conductors of the first and second fuse units 1A, 1B aggregated in the first electrode 134 and the second electrode 135, so that The first electrode 134 and the second electrode 135 in the insulation are short-circuited. That is, the switching element 130 short-circuits the switch 150, and can switch the current path across the second and fifth electrodes 135, 138 to the current path across the first and second electrodes 134, 135 (FIG. 32).

此時,熔絲單元1A,1B如上所述,由於積層有熔點低於高熔點金屬層2之第1低熔點金屬層3及熔點低於第1低熔點金屬層3之第2低熔點金屬層4,因此從第2低熔點金屬層4之熔點開始熔融,而開始侵蝕高熔點金屬層2。是以,熔絲單元1A,1B,能藉由利用第1,第2低熔點金屬層3,4對高熔點金屬層2之侵蝕作用,高熔點金屬層2以低於熔融溫度之溫度被熔融,迅速熔斷。 At this time, the fuse units 1A, 1B have the first low melting point metal layer 3 having a melting point lower than the high melting point metal layer 2 and the second low melting point metal layer having a melting point lower than the first low melting point metal layer 3 as described above. 4. Therefore, the melting point of the second low-melting-point metal layer 4 begins to melt, and the high-melting-point metal layer 2 begins to erode. Therefore, the fuse units 1A, 1B can be fused by the first and second low-melting-point metal layers 3, 4 to the high-melting-point metal layer 2, and the high-melting-point metal layer 2 is melted at a temperature lower than the melting temperature , Quickly blown.

此外,對第1發熱體132之通電,係藉由熔斷第1熔絲單元1A而遮斷第1,第3電極134,136間而被停止,對第2發熱體133之通電,係藉由第2熔絲單元1B熔斷而遮斷第2,第4電極135,137間及第4,第5電極137,138間而被停止。 In addition, the energization of the first heating element 132 is interrupted by fusing the first fuse unit 1A to block the first and third electrodes 134, 136, and the energization of the second heating element 133 is determined by the second The fuse unit 1B is fused to shut off the second and fourth electrodes 135,137 and the fourth and fifth electrodes 137,138, and is stopped.

[第2熔絲單元之先熔融] [The first fuse unit melts first]

此處,切換元件130,較佳為第2熔絲單元1B較第1熔絲單元1A先熔融。切換元件130中,由於第1發熱體132與第2發熱體133個別發熱,因此作為通電之時序係使第2發熱體133先發熱,其後使第1發熱體132發熱,藉此如圖30所示,使第2熔絲單元1B較第1熔絲單元1A先熔融,而能如圖31所示,確實地於第1,第2電極134,135上使第1,第2熔絲單元1A,1B之熔融導體凝集結合,而使第1,第2電極134,135短路。 Here, it is preferable that the switching element 130 melts before the second fuse unit 1B before the first fuse unit 1A. In the switching element 130, since the first heating body 132 and the second heating body 133 generate heat separately, the second heating body 133 heats first as the timing of energization, and then the first heating body 132 heats up, as shown in FIG. 30 As shown, the second fuse unit 1B is melted before the first fuse unit 1A, and as shown in FIG. 31, the first and second fuse units 1A can be reliably made on the first and second electrodes 134, 135, The molten conductor of 1B aggregates and bonds, and short-circuits the first and second electrodes 134 and 135.

又,切換元件130,亦可藉由將第2熔絲單元1B形成為寬度較第1熔絲單元1A窄,而使第2熔絲單元1B較第1熔絲單元1A先熔斷。藉由將第2熔絲單元1B形成為寬度較窄,由於能縮短熔斷時間,因此能使第2熔絲單元1B較第1熔絲單元1A先熔融。 In addition, the switching element 130 may be formed such that the second fuse unit 1B is narrower than the first fuse unit 1A, so that the second fuse unit 1B is blown before the first fuse unit 1A. By forming the second fuse unit 1B to have a narrow width, since the fusing time can be shortened, the second fuse unit 1B can be melted before the first fuse unit 1A.

[電極面積] [Electrode area]

又,切換元件130,較佳為使第1電極134之面積較第3電極136大,並使第2電極135之面積較第4,第5電極137,138大。熔融導體之保持量,由於係與電極面積成正比地增多,因此能藉由使第1,第2電極134,135之面積形成為較第3,第4,第5電極136,137,138大,而能使更多之熔融導體凝集於第1,第2電極134,135上,能使第1,第2電極134,135間確實地短路。 Furthermore, it is preferable that the switching element 130 has a larger area of the first electrode 134 than the third electrode 136 and a larger area of the second electrode 135 than the fourth and fifth electrodes 137 and 138. Since the retention amount of the molten conductor increases in proportion to the electrode area, the area of the first and second electrodes 134, 135 can be formed to be larger than that of the third, fourth, and fifth electrodes 136, 137, 138. The molten conductor aggregates on the first and second electrodes 134, 135, and can surely short-circuit the first and second electrodes 134, 135.

[切換元件之變形例] [Modification of switching element]

此外,切換元件130,不一定要由絕緣構件140覆蓋第1,第2發熱體132,133,第1,第2發熱體132,133亦可設置於絕緣基板131之內部。藉由使用熱傳導性優異之物作為絕緣基板131之材料,第1,第2發熱體132,133 能與透過玻璃層等絕緣構件140時同等地加熱。 In addition, the switching element 130 does not necessarily need to cover the first and second heating elements 132, 133 with the insulating member 140, and the first and second heating elements 132, 133 may also be provided inside the insulating substrate 131. By using an object with excellent thermal conductivity as the material of the insulating substrate 131, the first and second heating elements 132, 133 It can be heated in the same way as when passing through an insulating member 140 such as a glass layer.

又,切換元件130中,第1,第2發熱體132,133亦可設置於絕緣基板131之與第1~第5電極134,135,136,137,138之形成面相反之背面。藉由將第1,第2發熱體132,133形成於絕緣基板131之背面131b,而能以較形成於絕緣基板131內簡易之步驟形成。此外,此情形下,若於第1,第2發熱體132,133上形成絕緣構件140,則在電阻體之保護或構裝時之絕緣性確保的方面較佳。 Furthermore, in the switching element 130, the first and second heating elements 132, 133 may be provided on the back surface of the insulating substrate 131 opposite to the formation surface of the first to fifth electrodes 134, 135, 136, 137, 138. By forming the first and second heating elements 132 and 133 on the back surface 131b of the insulating substrate 131, it can be formed in a simpler process than in the insulating substrate 131. In addition, in this case, if the insulating member 140 is formed on the first and second heating elements 132 and 133, it is preferable in terms of protection of the resistor or ensuring insulation during assembly.

再者,切換元件130,亦可第1,第2發熱體132,133設置於絕緣基板131之第1~第5電極134,135,136,137,138之形成面上,且與第1~第5電極134~138併設。藉由將第1,第2發熱體132,133形成於絕緣基板131之表面131a,而能以較形成於絕緣基板131內簡易之步驟形成。此外,此情形下亦同樣地,較佳為於第1,第2發熱體132,133上形成絕緣構件140。 In addition, the switching element 130 may be provided with the first and second heating elements 132, 133 on the formation surface of the first to fifth electrodes 134, 135, 136, 137, 138 of the insulating substrate 131, and juxtaposed with the first to fifth electrodes 134 to 138. By forming the first and second heating elements 132 and 133 on the surface 131a of the insulating substrate 131, it can be formed in a simpler process than in the insulating substrate 131. In this case as well, it is preferable to form the insulating member 140 on the first and second heating elements 132 and 133.

1‧‧‧熔絲單元 1‧‧‧Fuse unit

2‧‧‧高熔點金屬層 2‧‧‧High melting point metal layer

3‧‧‧第1低熔點金屬層 3‧‧‧First low melting point metal layer

4‧‧‧第2低熔點金屬層 4‧‧‧The second low melting point metal layer

Claims (29)

一種熔絲單元,其具有:高熔點金屬層;第1低熔點金屬層,熔點低於上述高熔點金屬層;以及第2低熔點金屬層,熔點低於上述第1低熔點金屬層,上述熔絲單元,係以上述第2低熔點金屬層、上述高熔點金屬層、上述第1低熔點金屬層、上述高熔點金屬層之順序積層有四層以上。 A fuse unit having: a high melting point metal layer; a first low melting point metal layer having a melting point lower than the above high melting point metal layer; and a second low melting point metal layer having a melting point lower than the first low melting point metal layer above The wire unit has four or more layers stacked in the order of the second low melting point metal layer, the high melting point metal layer, the first low melting point metal layer, and the high melting point metal layer. 一種熔絲單元,其具有:高熔點金屬層;第1低熔點金屬層,熔點低於上述高熔點金屬層;以及第2低熔點金屬層,熔點低於上述第1低熔點金屬層,上述熔絲單元中,內層為上述第1低熔點金屬層,積層於上述內層之外層為上述高熔點金屬層,積層於上述外層之最外層為上述第2低熔點金屬層。 A fuse unit having: a high melting point metal layer; a first low melting point metal layer having a melting point lower than the above high melting point metal layer; and a second low melting point metal layer having a melting point lower than the first low melting point metal layer above In the wire unit, the inner layer is the first low melting point metal layer, the outer layer deposited on the inner layer is the high melting point metal layer, and the outermost layer deposited on the outer layer is the second low melting point metal layer. 如申請專利範圍第1或2項之熔絲單元,其中,上述第1低熔點金屬層之體積較上述高熔點金屬層之體積多。 For example, in the fuse unit of claim 1 or 2, the volume of the first low melting point metal layer is larger than the volume of the high melting point metal layer. 如申請專利範圍第1或2項之熔絲單元,其中,上述第2低熔點金屬層之體積較上述高熔點金屬層之體積多。 For example, in the fuse unit of claim 1 or 2, the volume of the second low melting point metal layer is larger than the volume of the high melting point metal layer. 如申請專利範圍第1或2項之熔絲單元,其中,上述高熔點金屬層為Ag、Cu或者以Ag或Cu作為主成分之合金,上述第1低熔點金屬層為Sn或者以Sn作為主成分之合金,上述第2低熔點金屬層為Bi、In或者為包含Bi或In之合金。 For example, the fuse unit according to item 1 or 2 of the patent application, wherein the high melting point metal layer is Ag, Cu or an alloy containing Ag or Cu as the main component, and the first low melting point metal layer is Sn or Sn is the main component For the alloy of the components, the second low-melting-point metal layer is Bi, In or an alloy containing Bi or In. 一種熔絲單元,其具有:高熔點金屬層;第1低熔點金屬層,熔點低於上述高熔點金屬層;以及第2低熔點金屬層,熔點低於上述第1低熔點金屬層;上述高熔點金屬層,係積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,上述高熔點金屬層為Ag、Cu或者以Ag或Cu作為主成分之合金,上述第1低熔點金屬層為Sn或者以Sn作為主成分之合金,上述第2低熔點金屬層為Bi、In或者為包含Bi或In之合金,上述熔絲單元,係以上述第1低熔點金屬層、上述高熔點金屬層、上述第2低熔點金屬層、上述高熔點金屬層之順序積層有四層以上。 A fuse unit having: a high melting point metal layer; a first low melting point metal layer having a melting point lower than the above high melting point metal layer; and a second low melting point metal layer having a melting point lower than the above first low melting point metal layer; the above high A melting point metal layer is deposited between the first low melting point metal layer and the second low melting point metal layer, the high melting point metal layer is Ag, Cu or an alloy containing Ag or Cu as a main component, the first low melting point The metal layer is Sn or an alloy containing Sn as a main component, the second low melting point metal layer is Bi, In or an alloy containing Bi or In, and the fuse unit is based on the first low melting point metal layer and the high The melting point metal layer, the second low melting point metal layer, and the high melting point metal layer are sequentially stacked in four or more layers. 一種熔絲元件,具有:絕緣基板;第1、第2電極,形成於上述絕緣基板上;以及熔絲單元,至少積層有高熔點金屬層與熔點低於上述高熔點金屬層之第1低熔點金屬層,跨接於上述第1、第2電極間;上述熔絲單元,係藉由熔點低於上述第1低熔點金屬層之第2低熔點金屬層而連接於上述第1、第2電極。 A fuse element includes: an insulating substrate; first and second electrodes formed on the insulating substrate; and a fuse unit, at least a high melting point metal layer and a first low melting point having a melting point lower than the high melting point metal layer are laminated A metal layer is bridged between the first and second electrodes; the fuse unit is connected to the first and second electrodes by a second low-melting metal layer having a melting point lower than the first low-melting metal layer . 如申請專利範圍第7項之熔絲元件,其中,上述熔絲單元中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第2低熔點金屬層。 A fuse element according to claim 7 of the patent application, wherein in the fuse unit, the high-melting-point metal layer is laminated between the first low-melting-point metal layer and the second low-melting-point metal layer, at least one of the outermost layers This is the second low melting point metal layer. 一種保護元件,具有: 絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,設於上述絕緣基板上;發熱體引出電極,與上述發熱體電性連接;以及可熔導體,從上述第1電極經由上述發熱體引出電極跨接於上述第2電極;上述可熔導體,至少由積層有高熔點金屬層與熔點低於上述高熔點金屬層之第1低熔點金屬層之熔絲單元構成;上述熔絲單元,係藉由熔點低於上述第1低熔點金屬層之第2低熔點金屬層而連接於上述第1、第2電極及上述發熱體引出電極,藉由上述發熱體之通電發熱而熔融,遮斷上述第1、第2電極間。 A protection element with: An insulating substrate; a heating element formed on or inside the insulating substrate; first and second electrodes provided on the insulating substrate; a heating element extraction electrode electrically connected to the heating element; and a fusible conductor, The second electrode is bridged from the first electrode through the heating element extraction electrode; the fusible conductor is at least composed of a fusion of a high melting point metal layer and a first low melting point metal layer having a melting point lower than the high melting point metal layer Wire unit; the fuse unit is connected to the first and second electrodes and the heating element extraction electrode by a second low melting point metal layer having a melting point lower than the first low melting point metal layer, by the heat generation The body is heated and melts, blocking the first and second electrodes. 如申請專利範圍第9項之保護元件,其中,上述熔絲單元中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第2低熔點金屬層。 A protection element according to claim 9 of the patent application, wherein in the fuse unit, the high-melting-point metal layer is laminated between the first low-melting-point metal layer and the second low-melting-point metal layer, and the outermost layer of at least one of the layers is The above second low melting point metal layer. 一種短路元件,具有:絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述發熱體電性連接;以及可熔導體,跨接於上述第1、第3電極間;上述可熔導體,至少由積層有高熔點金屬層與熔點低於上述高熔點金屬層之第1低熔點金屬層之熔絲單元構成; 上述熔絲單元,係藉由熔點低於上述第1低熔點金屬層之第2低熔點金屬層而連接於上述第1、第3電極,藉由上述發熱體之通電發熱而熔融,使上述第1、第2電極間短路且遮斷上述第1、第3電極間。 A short-circuit element comprising: an insulating substrate; a heating element formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided on the insulating substrate And electrically connected to the heating element; and a fusible conductor across the first and third electrodes; the fusible conductor includes at least a laminated high-melting metal layer and a melting point lower than the high-melting metal layer. 1 Composition of low-melting metal layer fuse unit; The fuse unit is connected to the first and third electrodes by a second low-melting-point metal layer having a melting point lower than the first low-melting-point metal layer, and is melted by energization of the heating element to cause the first 1. A short circuit between the second electrodes interrupts the first and third electrodes. 如申請專利範圍第11項之短路元件,其中,上述熔絲單元中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第2低熔點金屬層。 A short-circuit element according to claim 11 of the patent application, wherein, in the fuse unit, the high-melting-point metal layer is laminated between the first low-melting-point metal layer and the second low-melting-point metal layer, and the outermost layer of at least one of them is The above second low melting point metal layer. 一種短路元件,具有:絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述發熱體電性連接;以及可熔導體,跨接於上述第1、第3電極間;上述可熔導體,至少由積層有高熔點金屬層與熔點低於上述高熔點金屬層之第2低熔點金屬層之熔絲單元構成;上述熔絲單元,係藉由熔點低於上述高熔點金屬層且熔點高於上述第2低熔點金屬層之第1低熔點金屬層而連接於上述第1、第3電極,藉由上述發熱體之通電發熱而熔融,使上述第1、第2電極間短路且遮斷上述第1、第3電極間。 A short-circuit element comprising: an insulating substrate; a heating element formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided on the insulating substrate And electrically connected to the heating element; and a fusible conductor across the first and third electrodes; the fusible conductor includes at least a laminated high-melting metal layer and a melting point lower than the high-melting metal layer. 2 The fuse unit of the low melting point metal layer; the above fuse unit is connected to the first low melting point metal layer by a melting point lower than the high melting point metal layer and a melting point higher than the second low melting point metal layer 1. The third electrode is melted by the energization and heating of the heating element to short-circuit the first and second electrodes and block the first and third electrodes. 如申請專利範圍第13項之短路元件,其中,上述熔絲單元中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第1低熔點金屬層。 A short-circuit element according to claim 13 of the patent application, wherein in the fuse unit, the high-melting-point metal layer is laminated between the first low-melting-point metal layer and the second low-melting-point metal layer, and the outermost layer of at least one of the layers is The first low melting point metal layer. 一種切換元件,具有: 絕緣基板;第1、第2發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述第1發熱體電性連接;第1可熔導體,跨接於上述第1、第3電極間;第4電極,設於上述絕緣基板上且與上述第2發熱體電性連接;第5電極,於上述絕緣基板上與上述第4電極相鄰設置;以及第2可熔導體,從上述第2電極經由上述第4電極跨接於上述第5電極;上述第1、第2可熔導體,由積層有熔點彼此不同之三層以上之金屬層之熔絲單元構成;藉由上述第2發熱體之通電發熱使上述第2可熔導體熔融,遮斷上述第2、第5電極間;藉由上述第1發熱體之通電發熱使上述第1可熔導體熔融,使上述第1、第2電極間短路。 A switching element with: An insulating substrate; the first and second heating elements are formed on or inside the insulating substrate; the first and second electrodes are provided adjacent to the insulating substrate; the third electrode is provided on the insulating substrate and It is electrically connected to the first heating element; the first fusible conductor is connected across the first and third electrodes; the fourth electrode is provided on the insulating substrate and is electrically connected to the second heating element; 5 electrodes, provided on the insulating substrate adjacent to the fourth electrode; and a second fusible conductor, spanning from the second electrode to the fifth electrode via the fourth electrode; the first and second fusible The conductor is composed of a fuse unit in which three or more metal layers having different melting points are laminated; the second fusible conductor is melted by the energization of the second heating element to block the gap between the second and fifth electrodes ; The first fusible conductor is melted by the energization of the first heating element to short-circuit the first and second electrodes. 一種切換元件,具有:絕緣基板;第1、第2發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述第1發熱體電性連接;第1可熔導體,跨接於上述第1、第3電極間;第4電極,設於上述絕緣基板上且與上述第2發熱體電性連接;第5電極,於上述絕緣基板上與上述第4電極相鄰設置;以及 第2可熔導體,從上述第2電極經由上述第4電極跨接於上述第5電極;上述第1、第2可熔導體,至少由積層有高熔點金屬層與熔點低於上述高熔點金屬層之第1低熔點金屬層之熔絲單元構成;上述第1可熔導體,係藉由熔點低於上述第1低熔點金屬層之第2低熔點金屬層而連接於上述第1、第3電極;上述第2可熔導體,係藉由熔點低於上述第1低熔點金屬層之第2低熔點金屬層而連接於上述第2、第4、第5電極;藉由上述第2發熱體之通電發熱使上述第2可熔導體熔融,遮斷上述第2、第5電極間;藉由上述第1發熱體之通電發熱使上述第1可熔導體熔融,使上述第1、第2電極間短路。 A switching element comprising: an insulating substrate; first and second heating elements formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided On the insulating substrate and electrically connected to the first heating element; the first fusible conductor is connected across the first and third electrodes; the fourth electrode is provided on the insulating substrate and generates heat with the second Body electrical connection; the fifth electrode is provided adjacent to the fourth electrode on the insulating substrate; and The second fusible conductor is bridged from the second electrode to the fifth electrode via the fourth electrode; the first and second fusible conductors are at least composed of a laminated high melting point metal layer and a melting point lower than the high melting point metal The fuse unit of the first low-melting-point metal layer of the layer; the first fusible conductor is connected to the first and third by the second low-melting-point metal layer having a melting point lower than the first low-melting-point metal layer Electrode; the second fusible conductor is connected to the second, fourth, and fifth electrodes by a second low-melting metal layer having a melting point lower than the first low-melting metal layer; by the second heating element The energized heating causes the second fusible conductor to melt, blocking the second and fifth electrodes; the energized heating of the first heating body melts the first fusible conductor to melt the first and second electrodes Short circuit. 如申請專利範圍第16項之切換元件,其中,上述第1、第2可熔導體中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第2低熔點金屬層。 A switching element according to claim 16 of the patent application, wherein in the first and second fusible conductors, the high-melting-point metal laminate layer is between the first low-melting-point metal layer and the second low-melting-point metal layer, at least One outermost layer is the above-mentioned second low melting point metal layer. 一種切換元件,具有:絕緣基板;第1、第2發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述第1發熱體電性連接;第1可熔導體,跨接於上述第1、第3電極間;第4電極,設於上述絕緣基板上且與上述第2發熱體電性連接;第5電極,於上述絕緣基板上與上述第4電極相鄰設置;以及 第2可熔導體,從上述第2電極經由上述第4電極跨接於上述第5電極;上述第1、第2可熔導體,至少由積層有高熔點金屬層與熔點低於上述高熔點金屬層之第2低熔點金屬層之熔絲單元構成;上述第1可熔導體,係藉由熔點低於上述高熔點金屬層且熔點高於上述第2低熔點金屬層之第1低熔點金屬層而連接於上述第1、第3電極;上述第2可熔導體,係藉由熔點低於上述高熔點金屬層且熔點高於上述第2低熔點金屬層之第1低熔點金屬層而連接於上述第2、第4、第5電極;藉由上述第2發熱體之通電發熱使上述第2可熔導體熔融,遮斷上述第2、第5電極間;藉由上述第1發熱體之通電發熱使上述第1可熔導體熔融,使上述第1、第2電極間短路。 A switching element comprising: an insulating substrate; first and second heating elements formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided On the insulating substrate and electrically connected to the first heating element; the first fusible conductor is connected across the first and third electrodes; the fourth electrode is provided on the insulating substrate and generates heat with the second Body electrical connection; the fifth electrode is provided adjacent to the fourth electrode on the insulating substrate; and The second fusible conductor is bridged from the second electrode to the fifth electrode via the fourth electrode; the first and second fusible conductors are at least composed of a laminated high melting point metal layer and a melting point lower than the high melting point metal The fuse unit of the second low melting point metal layer of the layer; the first fusible conductor is formed by the first low melting point metal layer having a melting point lower than the high melting point metal layer and higher than the second low melting point metal layer Connected to the first and third electrodes; the second fusible conductor is connected to the first low-melting metal layer having a melting point lower than the high-melting metal layer and a melting point higher than the second low-melting metal layer. The second, fourth, and fifth electrodes; the second fusible conductor is melted by the energization of the second heating element to interrupt the second and fifth electrodes; the energization of the first heating element Heat generation melts the first soluble conductor and short-circuits the first and second electrodes. 如申請專利範圍第18項之切換元件,其中,上述第1、第2可熔導體中,上述高熔點金屬層積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,至少一方之最外層為上述第1低熔點金屬層。 According to the switching element of claim 18, in the first and second fusible conductors, the high-melting-point metal layer is laminated between the first low-melting-point metal layer and the second low-melting-point metal layer, at least One of the outermost layers is the above-mentioned first low melting point metal layer. 一種熔絲單元,其特徵在於:具備:高熔點金屬層,由易溶解於金屬之固體金屬所構成;第1低熔點金屬層,由對該高熔點金屬層之至少一面具有可溶性之金屬所構成;以及第2低熔點金屬層,由進而可溶於上述高熔點金屬層之另一面之可溶金屬所構成;上述高熔點金屬層由Ag、Cu或者由以Ag或Cu作為主成分之合金所構成,具有超過構裝作業溫度之第1熔融溫度,上述第1低熔點金屬層具有熔融溫度較上述高熔點金屬層低之第2熔融溫度,上述第2低熔 點金屬層在上述構裝作業溫度熔融,且具有上述第2熔融溫度以下之第3熔融溫度。 A fuse unit, characterized by comprising: a high-melting-point metal layer composed of a solid metal easily soluble in metal; a first low-melting-point metal layer composed of a metal soluble in at least one side of the high-melting metal layer ; And the second low-melting-point metal layer, which is further soluble in the other side of the high-melting-point metal layer; the high-melting-point metal layer is made of Ag, Cu or an alloy with Ag or Cu as the main component The first low melting point metal layer has a second melting temperature lower than the high melting point metal layer, and the second low melting point The spot metal layer melts at the above-mentioned construction working temperature and has a third melting temperature below the second melting temperature. 如申請專利範圍第20項之熔絲單元,其中,上述第1低熔點金屬層使用Sn或以Sn作為主成分之合金。 For example, in the fuse unit of claim 20, in the first low melting point metal layer, Sn or an alloy containing Sn as a main component is used. 如申請專利範圍第20項之熔絲單元,其中,上述第2低熔點金屬層使用Bi、In或包含Bi或In之合金。 For example, in the fuse unit of claim 20, in the second low melting point metal layer, Bi, In, or an alloy containing Bi or In is used. 如申請專利範圍第21項之熔絲單元,其中,上述第2低熔點金屬層使用Bi、In或包含Bi或In之合金。 As for the fuse unit of claim 21, wherein the second low melting point metal layer uses Bi, In, or an alloy containing Bi or In. 如申請專利範圍第20至23項中任一項之熔絲單元,其中,上述構裝作業溫度為回焊之表面構裝溫度。 As for the fuse unit according to any one of patent application items 20 to 23, wherein the above-mentioned assembly operation temperature is the surface assembly temperature of reflow. 一種熔絲元件,其特徵在於:具有:絕緣基板;第1、第2電極,形成於上述絕緣基板上;熔絲單元,跨接於上述第1、第2電極間;以及覆蓋構件,覆蓋上述熔絲單元,上述熔絲單元具備:高熔點金屬層,由易溶解於金屬之固體金屬所構成;第1低熔點金屬層,由對該高熔點金屬層之至少一面具有可溶性之金屬所構成;以及第2低熔點金屬層,由進而可溶於上述高熔點金屬層之另一面之可溶金屬所構成;上述高熔點金屬層由Ag、Cu或者由以Ag或Cu作為主成分之合金所構成,具有超過構裝作業溫度之第1熔融溫度,上述第1低熔點金屬層具有熔融溫度較上述高熔點金屬層低之第2熔融溫度, 上述第2低熔點金屬層在上述構裝作業溫度熔融,且具有上述第2熔融溫度以下之第3熔融溫度。 A fuse element, comprising: an insulating substrate; first and second electrodes formed on the insulating substrate; a fuse unit spanning between the first and second electrodes; and a covering member covering the above A fuse unit, the fuse unit includes: a high melting point metal layer composed of a solid metal that is easily soluble in the metal; a first low melting point metal layer composed of a metal that is soluble on at least one side of the high melting point metal layer; And a second low-melting-point metal layer composed of a soluble metal that is further soluble in the other side of the high-melting-point metal layer; the high-melting-point metal layer is composed of Ag, Cu, or an alloy containing Ag or Cu as a main component , Having a first melting temperature that exceeds the assembly operating temperature, the first low melting point metal layer has a second melting temperature lower than the high melting point metal layer, The second low-melting-point metal layer melts at the construction work temperature and has a third melting temperature below the second melting temperature. 一種保護元件,其特徵在於:具有:絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,設於上述絕緣基板上;發熱體引出電極,與上述發熱體電性連接;以及熔絲單元,從上述第1電極經由上述發熱體引出電極跨接於上述第2電極,上述熔絲單元,係藉由上述發熱體之通電發熱而熔融,遮斷上述第1、第2電極間,上述熔絲單元具備:高熔點金屬層,由易溶解於金屬之固體金屬所構成;第1低熔點金屬層,由對該高熔點金屬層之至少一面具有可溶性之金屬所構成;以及第2低熔點金屬層,由進而可溶於上述高熔點金屬層之另一面之可溶金屬所構成;上述高熔點金屬層由Ag、Cu或者由以Ag或Cu作為主成分之合金所構成,具有超過構裝作業溫度之第1熔融溫度,上述第1低熔點金屬層具有熔融溫度較上述高熔點金屬層低之第2熔融溫度,上述第2低熔點金屬層在上述構裝作業溫度熔融,且具有上述第2熔融溫度以下之第3熔融溫度。 A protection element, comprising: an insulating substrate; a heating element formed on the insulating substrate or inside the insulating substrate; first and second electrodes provided on the insulating substrate; a heating element extraction electrode, which generates heat Body electrical connection; and a fuse unit, which is bridged from the first electrode to the second electrode via the heating element extraction electrode, and the fuse unit is melted by the energization of the heating body to block the first 1. Between the second electrodes, the fuse unit includes: a high melting point metal layer composed of a solid metal that is easily soluble in the metal; a first low melting point metal layer composed of a metal that is soluble on at least one side of the high melting point metal layer And the second low-melting-point metal layer is composed of a soluble metal that is further soluble in the other side of the high-melting-point metal layer; the high-melting-point metal layer is composed of Ag, Cu or Ag or Cu as the main component The alloy is composed of a first melting temperature that exceeds the assembly operating temperature, the first low melting point metal layer has a second melting temperature lower than the high melting point metal layer, and the second low melting point metal layer is in the assembly The operating temperature melts and has a third melting temperature below the second melting temperature. 一種短路元件,其特徵在於:具有: 絕緣基板;發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述發熱體電性連接;以及熔絲單元,跨接於上述第1、第3電極間;上述熔絲單元,係藉由上述發熱體之通電發熱而熔融,使上述第1、第2電極間短路,並且遮斷上述第1、第3電極間,上述熔絲單元具備:高熔點金屬層,由易溶解於金屬之固體金屬所構成;第1低熔點金屬層,由對該高熔點金屬層之至少一面具有可溶性之金屬所構成;以及第2低熔點金屬層,由進而可溶於上述高熔點金屬層之另一面之可溶金屬所構成;上述高熔點金屬層由Ag、Cu或者由以Ag或Cu作為主成分之合金所構成,具有超過構裝作業溫度之第1熔融溫度,上述第1低熔點金屬層具有熔融溫度較上述高熔點金屬層低之第2熔融溫度,上述第2低熔點金屬層在上述構裝作業溫度熔融,且具有上述第2熔融溫度以下之第3熔融溫度。 A short-circuit component characterized by: An insulating substrate; a heating element formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided on the insulating substrate and electrically connected to the heating element Sexual connection; and a fuse unit, which is connected between the first and third electrodes; the fuse unit is melted by the energization of the heating element to short-circuit the first and second electrodes and shield Between the first and third electrodes, the fuse unit includes: a high melting point metal layer composed of a solid metal that is easily soluble in metal; and a first low melting point metal layer composed of at least one side of the high melting point metal layer Soluble metal; and the second low melting point metal layer, which is further soluble in the other side of the high melting point metal layer; the high melting point metal layer is made of Ag, Cu or Ag or Cu as The main component alloy is composed of a first melting temperature that exceeds the assembly operation temperature. The first low melting point metal layer has a second melting temperature lower than that of the high melting point metal layer. The second low melting point metal layer is at The above-mentioned assembly working temperature melts and has a third melting temperature below the second melting temperature. 一種切換元件,具有:絕緣基板;第1、第2發熱體,形成於上述絕緣基板上或上述絕緣基板內部;第1、第2電極,於上述絕緣基板上相鄰設置;第3電極,設於上述絕緣基板上且與上述第1發熱體電性連接;第1熔絲單元,跨接於上述第1、第3電極間;第4電極,設於上述絕緣基板上且與上述第2發熱體電性連接; 第5電極,於上述絕緣基板上與上述第4電極相鄰設置;以及第2熔絲單元,從上述第2電極經由上述第4電極跨接於上述第5電極,上述第1、第2熔絲單元具備:高熔點金屬層,由易溶解於金屬之固體金屬所構成;第1低熔點金屬層,由對該高熔點金屬層之至少一面具有可溶性之金屬所構成;以及第2低熔點金屬層,由進而可溶於上述高熔點金屬層之另一面之可溶金屬所構成;上述高熔點金屬層由Ag、Cu或者由以Ag或Cu作為主成分之合金所構成,具有超過構裝作業溫度之第1熔融溫度,上述第1低熔點金屬層具有熔融溫度較上述高熔點金屬層低之第2熔融溫度,上述第2低熔點金屬層在上述構裝作業溫度熔融,且具有上述第2熔融溫度以下之第3熔融溫度,藉由上述第2發熱體之通電發熱使上述第2熔絲單元熔融,遮斷上述第2、第5電極間,藉由上述第1發熱體之通電發熱使上述第1熔絲單元熔融,使上述第1、第2電極間短路。 A switching element comprising: an insulating substrate; first and second heating elements formed on or inside the insulating substrate; first and second electrodes provided adjacent to the insulating substrate; and a third electrode provided On the insulating substrate and electrically connected to the first heating element; a first fuse unit is connected across the first and third electrodes; a fourth electrode is provided on the insulating substrate and generates heat with the second Body electrical connection; A fifth electrode is provided adjacent to the fourth electrode on the insulating substrate; and a second fuse unit is bridged from the second electrode to the fifth electrode via the fourth electrode, and the first and second fuses The wire unit includes: a high-melting-point metal layer composed of a solid metal that is easily soluble in the metal; a first low-melting-point metal layer composed of a metal soluble in at least one side of the high-melting-point metal layer; and a second low-melting-point metal The layer is composed of a soluble metal that is further soluble in the other side of the high-melting-point metal layer; the high-melting-point metal layer is composed of Ag, Cu, or an alloy containing Ag or Cu as the main component, and has over-construction work The first melting temperature of the temperature, the first low-melting-point metal layer has a second melting temperature lower than the high-melting-point metal layer, the second low-melting metal layer melts at the assembly working temperature, and has the second At the third melting temperature below the melting temperature, the second fuse unit is melted by the energized heating of the second heating element to block the second and fifth electrodes, and the energized heating of the first heating element causes the The first fuse unit melts and short-circuits the first and second electrodes. 一種熔絲單元,其具有:高熔點金屬層;第1低熔點金屬層,熔點低於上述高熔點金屬層;以及第2低熔點金屬層,熔點低於上述第1低熔點金屬層;上述高熔點金屬層,係積層於上述第1低熔點金屬層與上述第2低熔點金屬層之間,上述高熔點金屬層為Ag、Cu或者以Ag或Cu作為主成分之合金,上述第1低熔點金屬層為Sn或者以Sn作為主成分之合金,上述第2低熔點 金屬層為Bi、In或者為包含Bi或In之合金。 A fuse unit having: a high melting point metal layer; a first low melting point metal layer having a melting point lower than the above high melting point metal layer; and a second low melting point metal layer having a melting point lower than the above first low melting point metal layer; the above high A melting point metal layer is deposited between the first low melting point metal layer and the second low melting point metal layer, the high melting point metal layer is Ag, Cu or an alloy containing Ag or Cu as a main component, the first low melting point The metal layer is Sn or an alloy containing Sn as the main component, and the above-mentioned second low melting point The metal layer is Bi, In or an alloy containing Bi or In.
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JP7433783B2 (en) * 2019-06-19 2024-02-20 デクセリアルズ株式会社 Fuse elements, fuse elements and protection elements
JP7433796B2 (en) * 2019-07-24 2024-02-20 デクセリアルズ株式会社 protection element
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CN107735849B (en) 2020-05-05
TW201630022A (en) 2016-08-16
JP2016095899A (en) 2016-05-26
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WO2016076173A1 (en) 2016-05-19
JP6436729B2 (en) 2018-12-12

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