TWI696683B - Adhesive tape for semiconductor processing - Google Patents

Abstract

The present invention is a tape for semiconductor processing, and its object is to provide a tape for semiconductor processing that can prevent wrinkling of a metal layer when bonding to a semiconductor wafer.

The solution is that the semiconductor processing tape (10) of the present invention includes: a dicing tape (13) having a substrate film (11) and an adhesive layer (12), and is provided on the adhesive layer (12), In order to protect the metal layer (14) on the back surface of the semiconductor wafer and to be provided on the metal layer (14), in order to adhere the metal layer (14) to the adhesive layer (15) on the back surface of the semiconductor wafer, the dicing tape (13) Is characterized by a ring stiffness of 20mN or more and less than 200mN.

Description

Adhesive tape for semiconductor processing

The present invention relates to a tape for semiconductor processing, and particularly to a tape for semiconductor processing having a metal layer for protecting the back surface of a semiconductor wafer mounted by a face down method.

In recent years, the addition of a further layer has required thinner and smaller semiconductor devices and their packages. The semiconductor device is manufactured using a mounting method called a so-called face down method. In the flip-chip method, a semiconductor wafer formed with protruding electrodes called protruding electrodes to ensure conduction to the circuit surface is used to invert the circuit surface (flip-chip) to form a structure that connects the electrodes to the substrate ( So-called flip chip connection).

In such a semiconductor device, the back surface of the semiconductor wafer is protected by a tape for semiconductor processing to prevent damage to the semiconductor wafer, etc. (see Patent Document 1). Furthermore, it is also known that a single-sided adhesive film formed of a metal layer and an adhesive layer is attached to a semiconductor element by an adhesive layer (refer to Patent Document 2).

As a representative step of flip chip connection, it will be formed Solder bump electrodes formed on the surface of the semiconductor wafer following the tape for semiconductor processing are immersed in the flux, and then the bump electrodes are brought into contact with the electrodes formed on the substrate (where necessary, solder bump electrodes are also formed on this electrode) Finally, the solder bump electrode is melted and the solder bump electrode and the electrode are reflowed and connected. The flux is used for the purpose of washing or preventing oxidation of the solder bump electrode when solder is attached, and improving the wettability of the solder. Through the above steps, a good electrical connection between the semiconductor wafer and the substrate can be constructed.

Therefore, it is possible to prevent the occurrence of stains even if a flux is attached, and it is possible to manufacture a semiconductor processing tape with excellent appearance for semiconductor devices. Proposals include: an adhesive layer and a layer laminated on the adhesive layer The protective layer is a thin film for the back surface of a flip-chip semiconductor that constitutes the protective layer with a heat-resistant resin or metal having a glass transition temperature of 200° C. or higher (refer to Patent Document 3).

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Unexamined Patent Publication No. 2007-158026

[Patent Document 2] Japanese Patent Laid-Open No. 2007-235022

[Patent Document 3] Japanese Patent Laid-Open No. 2012-033626

However, as in the above-mentioned Patent Document 1, the package is made by radiation or heat The resin containing the radiation-hardening component or the thermosetting component is hardened to form a protective film. The difference between the thermal expansion coefficient of the cured protective film and the semiconductor wafer is large. For the semiconductor wafer or semiconductor wafer in the process of processing There is a problem with bending.

In this regard, as in the above-mentioned Patent Document 2 or Patent Document 3, when a metal protective layer (hereinafter, referred to as a metal layer) is adhered to a semiconductor wafer by an adhesive layer, bending can be prevented. Here, Patent Document 3 also discloses a film for flip-chip semiconductor back surface provided with a protective layer and an adhesive layer on the adhesive layer of the dicing tape on which the adhesive layer is laminated on the substrate.

Such a dicing tape-integrated flip chip type semiconductor back surface film (hereinafter, referred to as a semiconductor processing tape) is usually provided with a spacer for protecting the adhesive layer on the adhesive layer, and for bonding When the adhesive layer is on the semiconductor wafer, the semiconductor wafer is not attached to the adhesive layer in a state where the wrinkle is close to the adhesive layer, and the adhesive layer side is taken as the bottom, and each of the spacers is slightly peeled off, and the tape side is diced from Press the bonding roller to perform bonding at the same time. When bonding in this way, the conventional semiconductor processing tape has a problem of wrinkling in the metal layer.

The wrinkle of the protective layer is presumed to be generated by the following mechanism. When peeling the spacer, tension is applied to one side of the flip-chip semiconductor film. The cutting tape is expandable. It extends in the direction of tension and deforms, and wrinkles occur in the direction of tension. In this way, the metal layer and the adhesive layer provided on the dicing tape also have wrinkles. However, the thin film system for flip-chip semiconductor back surface After the separator is peeled off, it is pressed by the bonding roller. At this time, the cutting tape and the adhesive layer have sufficient flexibility, and they are stretched along the direction of the bonding roller to eliminate the Wrinkles generated during peeling. However, it is believed that the protective layer made of metal did not follow this, but was attached in a state where wrinkles were generated.

As mentioned above, the tape for semiconductor processing is usually a film and dicing tape for the back surface of a flip chip semiconductor formed with a protective layer and an adhesive layer corresponding to a pre-cut into a specific shape of a semiconductor wafer on a long spacer The protective layer and the adhesive layer are bonded together, and the cutting tape is pre-cut from the substrate film side to a specific shape (usually circular) corresponding to the ring frame, which is wound into a roller shape shape. As such, in the case of using a roller-shaped adhesive tape for semiconductor processing, the occurrence of wrinkles in the metal layer is remarkable. In the following, it will be described in more detail using FIG. 3.

First, a brief description of the device for bonding semiconductor processing tape 100 to the semiconductor wafer W and ring frame R. method. The tape 100 for semiconductor processing wound into a roller shape is shown in FIG. 3, and is guided in a sheet shape in the A direction, and is wound through a roller 102 wound in the B direction. The lead-out path of the tape 100 for semiconductor processing is provided with a peeling wedge 103, and the front end of the peeling wedge 103 is used as a turning point, and only the spacer 101 is peeled off and wound around the winding roller 102. A bonding table 104 is provided below the front end of the wedge portion 103 for peeling, and a semiconductor wafer W and a ring frame R are provided above the bonding table 104. The flip-chip semiconductor back peeled from the spacer 101 via the peeling wedge 103 The surface film 105 (a laminate of the metal layer and the adhesive layer) and the dicing tape 106 are guided to the ring frame R and the semiconductor wafer W, and then bonded to the ring frame R and the ring frame 7 through the bonding roller 7 Semiconductor wafer W. In FIG. 3, the bonding table 104 moves to the left, and the laminated body of the film 105 for flip-chip semiconductor back surface and the dicing tape 106 is repeatedly bonded to the next ring frame R and semiconductor wafer W.

Next, a mechanism for wrinkling the metal layer during bonding will be described. By adjusting the speed and tension of the roller-shaped tape 100 for semiconductor processing, winding the roller 102, and the bonding table 104, the spacer 101 before the peeling of the film 105 for flip-chip semiconductor back surface and the dicing tape 106 is added Increase the tension to the C direction. This is because the adhesive is applied to the tape 100 for semiconductor processing and the pin is stretched, so that it can be bonded without wrinkles.

In the initial stage of the bonding, only the front end of the cutting tape 106 is bonded to the ring frame. The dicing tape 106 is usually pre-cut into a circle. At this time, the part to be bonded is in a dot state. In addition, the remaining portion is not peeled off from the spacer 101 but remains on the spacer 101, and is in a state of being stretched in the C direction simultaneously with the spacer 101. The dicing tape 106 is expandable, and when it is stretched, it is stretched and deformed. In addition, since the one side is stretched in a state where it is fixed with a point, the state of extension between the central part (near the fixed part) and the end of the short direction of the spacer 101 is different, and becomes Those with wrinkles (slacks) in the C direction. In addition, when slack occurs to the dicing tape 106, the thin film 105 for flip-chip semiconductor back surface provided thereon is also produced Slack.

After that, when the bonding stage 104 moves and performs bonding, the dicing tape 106 or the film 105 for flip-chip semiconductor backside is sequentially peeled off from the spacer 101, and then released from the tension applied in the C direction, resulting in The slack tape 106 is applied along the laminating roller 107 to eliminate laxity. This system has sufficient flexibility for the cutting tape 106 even if a tension with a degree of slack is added, and it is considered as if it is added along the bonding roller 107, that is, the direction stretched in the short direction of the spacer 101 The force extends in the short direction, which can eliminate the relaxation of the potential energy. Similarly, in the state where the adhesive layer of the thin film 105 for flip-chip semiconductor back surface is also eliminated, it is bonded to the semiconductor wafer W.

However, when the metal layer is stretched in the C direction, there is a slack state, and even if it is stretched in the short direction, it cannot follow the stretch. As a result, when it is along the bonding roller 107, slack is generated and folding is established as a wrinkle, causing a phenomenon of bonding to the semiconductor wafer W in this state.

When it is bonded to the semiconductor wafer W in a state where wrinkles are generated on the metal layer, it is bonded to the wafer because it is in a state where the thickness uniformity of the film for flip-chip semiconductor backside is lost There is a risk of cracking of the wafer, and the part that is prone to self-wrinkling is easy to peel off from the adhesive layer, which causes the package to break, and the reliability is also deteriorated.

Therefore, the object of the present invention is to provide: it can prevent the semiconductor processing of wrinkling the metal layer during the bonding to the semiconductor wafer Those with tape.

In order to solve the above problems, the tape for semiconductor processing of the present invention includes: a dicing tape having a base film and an adhesive layer, a metal layer provided on the adhesive layer, and a metal layer provided on the metal layer In order to adhere the metal layer to the adhesive layer on the back surface of the semiconductor wafer, the dicing tape 13 has a ring stiffness of 20 mN or more and less than 200 mN.

The above-mentioned tape for semiconductor processing is preferably made of any one of copper, nickel, aluminum, and stainless steel.

In addition, the tape for semiconductor processing is the thickness of the dicing tape of 55 μm or more, preferably less than 215 μm.

According to the present invention, it is possible to prevent a person from wrinkling the metal layer when bonding to a semiconductor wafer.

10‧‧‧Tape for semiconductor processing

11‧‧‧ Base film

12‧‧‧Adhesive layer

13‧‧‧Cutting tape

14‧‧‧Metal layer

15‧‧‧ Adhesive layer

1 is a cross-sectional view schematically showing the structure of a semiconductor processing tape according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view for explaining a method of using a semiconductor processing tape according to an embodiment of the present invention.

FIG. 3 is a device for attaching a semiconductor processing tape to a semiconductor wafer and a ring frame. The drawing of the method.

Hereinafter, embodiments of the present invention will be described in detail.

FIG. 1 is a cross-sectional view showing a semiconductor processing tape 10 according to an embodiment of the present invention. The tape 10 for semiconductor processing includes a base film 11 and a dicing tape 13 formed by an adhesive layer 12 provided on the base film 11, and the adhesive layer 12 is provided with a protective film for protecting the semiconductor wafer The metal layer 14 of C (refer to FIG. 2) and the adhesive layer 15 provided on the metal layer 14.

The surface of the adhesive layer 15 opposite to the surface in contact with the metal layer 14 is preferably protected by a spacer (release liner) (not shown). The spacer has a function as a protective material for protecting the adhesive layer 15 until it is practical. In addition, the spacer can be used by the user as a supporting base material when bonding the metal layer 14 to the adhesive layer 12 of the dicing tape 13 during the manufacturing process of the adhesive tape 10 for semiconductor processing.

The dicing tape 13, the metal layer 14 and the adhesive layer 15 may be cut in advance (cut in advance according to specifications) into a specific shape in accordance with the use of engineering or equipment. Furthermore, the tape 10 for semiconductor processing of the present invention may be cut into the form of each semiconductor wafer W1 divided, and a plurality of thin slices cut into each semiconductor wafer W1 divided, The roll may be in the form of a roller. In the following, each component will be described.

<Base film 11>

As the base film 11, if the ring stiffness of the dicing tape 13 is 20 mN or more and less than 200 mN, it can be used without particularly restricting the conventionally known structure, but for the adhesive layer 12 described later, radiation-curable In the case of materials, it is better to use a structure that has radiation permeability.

For example, as its material, polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene/vinyl acetate copolymer, ethylene-ethyl acrylate Copolymers, ethylene-acrylic acid methyl copolymers, ethylene-acrylic acid copolymers, individual polymers or copolymers of α-olefins such as ionic polymers, or mixtures of these, polyurethane, styrene-ethylene-butylene or pentene Thermoplastic synthetic rubbers such as olefin copolymers, polyamide-polyol copolymers, etc., and mixtures thereof. In addition, the base film 11 may be a mixture of two or more materials selected from these groups, and these may be used as a single layer or a multi-layer.

The thickness of the base film 11 is not particularly limited, and may be appropriately set, but 50 to 200 μm is preferable.

In order to improve the adhesion between the base film 11 and the adhesive layer 12, the surface of the base film 11 is treated with chromic acid treatment, ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, etc. Physical surface treatment.

In addition, in the present embodiment, the adhesive layer 12 is provided directly above the base film 11, but the bottom The paint layer, or the fixed layer for improving the machinability during cutting, the stress relaxation layer, the static electricity prevention layer, etc. may be provided indirectly.

<Adhesive layer 12>

The resin used for the adhesive layer 12 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, etc. used for the adhesive can be used, but An acrylic adhesive using an acrylic polymer as the base polymer is preferred.

Examples of acrylic polymer systems include alkyl (meth)acrylates (eg, methyl esters, ethyl esters, propyl esters, isopropyl esters, and butyl esters) used as a single component. Isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, isoamyl ester, hexane ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester , Nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, eicosyl ester, etc. Alkyl carbons 1 to 30, especially linear or branched alkyl esters with carbons 4 to 18, etc.) and cycloalkyl (meth)acrylates (eg, cyclopentyl esters, cyclohexyl esters, etc.) One or more acrylic polymers. However, (meth)acrylate refers to acrylate and/or methacrylate, and has exactly the same meaning as the (meth) system of the present invention.

Acrylic polymers are intended to improve the cohesive strength, heat resistance, etc., and contain other monomer components that can be copolymerized with the aforementioned (meth)acrylic acid alkyl ester or cycloalkyl acrylate as necessary. Units are also available. Examples of such a monomer component include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, and crotonic acid. , Crotonic acid and other carboxyl groups contain monomers; anhydrous maleic acid, itaconic anhydride and other anhydride monomers; (meth)acrylic acid 2-hydroxyethyl, (meth)acrylic acid 2-hydroxypropyl, (meth Group) 4-hydroxybutyl acrylate, 6-hydroxyhexyl (meth)acrylate, 8-hydroxyoctyl (meth)acrylate, 10-hydroxydecyl (meth)acrylate, 12-hydroxy (meth)acrylate Hydroxy-containing monomers such as dodecyl, (4-hydroxymethylcyclohexane) methyl (meth) acrylic acid; styrene sulfonic acid, propenyl sulfonic acid, 2-(meth)acrylamide-2 Methylpropanesulfonic acid, (meth)acrylamide propanesulfonic acid, sulfopropyl (meth)acrylic acid, (meth)acryloyloxynesulfonic acid and other sulfonic acid groups contain monomers; 2-hydroxyethyl Phosphoric acid groups such as acrylamide phosphoric acid contain monomers; acrylamide, acrylonitrile, etc. One or more of these copolymerizable monomer components can be used. The use amount of these copolymerizable monomers is preferably 40% by weight or less of all monomer components.

Furthermore, since the acrylic polymer system is cross-linked, polyfunctional monomers and the like can also be contained as monomer components for copolymerization as necessary. Examples of such multifunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate. , Neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate ) Acrylate, epoxy (meth) acrylic Ester, polyester (meth)acrylate, urethane (meth)acrylate, etc. One or more of these polyfunctional monomers can also be used. The usage amount of the multifunctional monomer is from the viewpoint of adhesive characteristics, etc., preferably 30% by weight or less of the total monomer component.

The preparation of the acrylic polymer can be carried out by applying a suitable method such as solution polymerization method, emulsification polymerization method, bulk polymerization method or suspension polymerization method to a mixture of one or more component monomers. The adhesive layer 12 is from the point of preventing contamination of the wafer, etc., and it is better to suppress the composition of the low molecular weight substance. From the point of view, the weight average molecular weight is more than 300,000, especially 400,000 to 3 million acrylic acid In the case where the polymer is the main component, the adhesive system can also be used as an appropriate cross-linking method via an internal cross-linking method or an external cross-linking method.

In addition, in order to control the crosslink density of the adhesive layer 12, for example, a polyfunctional isocyanate-based compound, a polyfunctional epoxy-based compound, a melamine-based compound, a metal salt-based compound, a metal chelate-based compound, an amino resin-based compound can be used, Or a suitable external cross-linking agent such as peroxide for cross-linking treatment, or a method of mixing low-molecular compounds with more than two carbon-carbon double bonds and performing cross-linking treatment by irradiation of energy rays, etc. The suitable way. In the case of using an external crosslinking agent, the amount of use is appropriately determined by balancing with the base polymer to be crosslinked, and also by the use as an adhesive. Generally speaking, for the 100 weight points of the aforementioned base polymer, it is preferably less than about 5 weight points, and more preferably 0.1 to 5 weight points. However, for the adhesive system, in addition to the aforementioned ingredients, various adhesive Additives such as additives, aging inhibitors, etc. may also be used.

As the adhesive constituting the adhesive layer 12, a radiation-curable adhesive is most preferable. As the radiation-curing adhesive, there can be exemplified the above-mentioned adhesive, an additive-type radiation-curing adhesive in which a radiation-curable monomer component or a radiation-curable oligomer component is formulated.

Examples of the radiation-curable monomer component to be formulated include, for example, urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, and tetramethylmethane tetra(meth)acrylic acid. Ester, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butanediol di Meth)acrylate etc. One or more of these monomer components can be used in combination.

In addition, radiation-curable oligomer component systems include urethane-based, polyether-based, polyester-based, polycarbonate-based, and polybutadiene-based oligomers, and their molecular weight is 100 The structure in the range of about 30,000 is appropriate. The amount of the radiation-curable monomer component or oligomer component is determined according to the type of the adhesive layer, and the amount that can reduce the adhesive force of the adhesive layer can be appropriately determined. In general, for 100 parts by weight of the base polymer such as an acrylic polymer constituting the adhesive, for example, 5 to 500 parts by weight, and preferably about 70 to 150 parts by weight.

In addition, as the radiation-curable adhesive, in addition to the aforementioned additive-type radiation-curable adhesive, it may also be used as a base polymer having a carbon-carbon double bond in the polymer side chain or main chain Or the intrinsic type radiation hardening adhesive at the end of the main chain. The built-in radiation-curing adhesives do not need to contain low-molecular-weight oligomer components, etc., or they do not contain a majority, and the oligomer components, etc., move within the adhesive and do not form over time. The adhesive layer of the stability layer structure is ideal.

The base polymer having a carbon-carbon double bond may be a composition having a carbon-carbon double bond and having adhesiveness without being particularly limited. As such a base polymer, it is preferable to use an acrylic polymer as a basic structure. As the basic structure of the acrylic polymer, the acrylic polymer exemplified above can be mentioned.

The introduction method of the carbon-carbon double bond of the acrylic polymer is not particularly limited, and various methods can be used. However, when the carbon-carbon double bond system is introduced into the side chain of the polymer, the molecular design is easy. For example, it may be mentioned that, after copolymerizing a monomer having a functional group in an acrylic polymer in advance, the functional group that can react with this functional group and the compound having a carbon-carbon double bond are maintained to maintain the carbon-carbon double bond. Radiation hardening, condensation or additional reaction method.

Examples of combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridine groups, hydroxyl groups and isocyanate groups, and the like. Among these combinations of functional groups, the combination of hydroxyl group and isocyanate group is the best from the ease of reaction catching. In addition, if a combination of these functional groups is used to form a combination of acrylic polymers having the aforementioned carbon-carbon double bond, the functional groups may also be located on either side of the acrylic polymer and the aforementioned compound, but The aforementioned ideal combination, the acrylic polymer has hydroxyl Group, and the case where the aforementioned compound has an isocyanate group is the best. In this case, as the isocyanate-based compound having a carbon-carbon double bond, for example, methacryloyl isocyanate, isocyanoethyl 2-methacrylate, m-isopropenyl-α,α-di Methylbenzyl isocyanate, etc. In addition, as the acrylic polymer, a constitution is adopted in which the hydroxy-containing polymer exemplified above is copolymerized or an ether-based compound of 2-hydroxyethyl vinyl ether, 4-hydroxy vinyl ether, and diethylene glycol monovinyl ether.

The internal type radiation-curable adhesive system can use the base polymer (especially acrylic polymer) having the aforementioned carbon-carbon double bond alone, but the radiation-curable monomer component can also be formulated without deteriorating the characteristics Or photopolymerizable compounds such as oligomer components. The compounding amount of the photopolymerizable compound is usually within a range of 30 parts by weight or less for 100 parts by weight of the base polymer, and is preferably within a range of 0 to 10 parts by weight.

The radiation-curable adhesive is preferably a photopolymerization initiator when cured by ultraviolet rays or the like.

Among the above acrylic polymers, there are also acrylates represented by CH ₂ =CHCOOR (where R is an alkyl group having 4 to 8 carbon atoms), and hydroxyl-containing monomers, and have in the molecule An acrylic polymer A composed of an isocyanate compound having a radical-reactive carbon-carbon double bond is preferred.

When the carbon number of the alkyl acrylate alkyl group is less than 4, the peeling force increases and the pick-up property may decrease. On the other hand, when the carbon number of the alkyl group of the alkyl acrylate exceeds 8, the adhesion or adhesion to the metal layer 14 Then, as a result, the metal layer 14 may peel off during dicing.

The acrylic polymer A system may contain units corresponding to other monomer components as necessary.

In the acrylic polymer A, an isocyanate compound having a radical-reactive carbon-carbon double bond is used. That is, the acrylic polymer is preferably a monomer composition that passes through the aforementioned acrylic ester or hydroxyl group-containing monomer and the like, and has an additional reaction double bond-containing isocyanate compound. Along with this, the acrylic polymer is based on its molecular structure, and it is preferable to have a radical-reactive carbon-carbon double bond. As a result, it can be used as an active energy ray-curable adhesive layer (ultraviolet-curable adhesive layer, etc.) that is cured by irradiation with active energy rays (ultraviolet rays, etc.), so that the peeling force of the metal layer 15 and the adhesive layer 12 can be achieved. Reducer.

Examples of the carbon double bond isocyanate compound include methacryloyl isocyanate, 2-methacrylic isocyanate, 2-acryloyloxyethyl isocyanate, m-isopropenyl-α, α-Dimethylbenzyl isocyanate and so on. The carbon double bond-containing isocyanate compound system can be used alone or in combination of two or more kinds.

In addition, for the active energy ray-curable adhesive, in order to adjust the adhesive force before the active energy ray irradiation or the adhesive force after the active energy ray irradiation, an external crosslinking agent may be suitably used. As a specific method of the external cross-linking method, a method of adding and reacting a so-called cross-linking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, a melamine-based cross-linking agent and the like can be mentioned. When using an external crosslinking agent, its use The amount is appropriately determined by the balance with the base polymer to be cross-linked, and also by the use as an adhesive. The amount of the external crosslinking agent used is generally 20 parts by weight or less (ideally 0.1 parts by weight to 10 parts by weight) for 100 parts by weight of the aforementioned base polymer. Furthermore, the active energy ray-curable adhesive agent may be blended with various additives known in the art in addition to the aforementioned components, such as conventionally known adhesion-imparting agents, anti-aging agents, and foaming agents, if necessary.

The thickness of the adhesive layer 12 is not particularly limited and can be appropriately determined, but generally it is about 5 to 200 μm. In addition, the adhesive layer 12 may be constituted by a single layer, or may be constituted by a plurality of layers.

The thickness of the dicing tape 13 is preferably 55 μm or more from the viewpoint of handleability, and is preferably 70 μm or more from the viewpoint of improving the strength of the tape for semiconductor processing. In addition, when it is necessary to expand after dicing, it is preferably less than 215 μm, and from the viewpoint of superior pick-up properties, it is preferably less than 160 μm.

The dicing tape 13 has a ring stiffness measured under the following conditions of 20 mN or more and less than 200 mN, preferably 26 mN or more, and more preferably 33 mN or more.

Conditions for measuring ring stiffness:

Device; ring stiffness measuring device DA (manufactured by Toyo Seiki Co., Ltd., trade name)

Ring (sample) shape; length 80mm, width 25mm

Pressing speed of indenter; 3.3mm/sec

Measurement data: The test piece cut into 25mm wide dicing tape, the surface to which the adhesive layer is attached is bent into an omega-shaped ring as the inner side of the ring, and then overlaps the two ends in the longitudinal direction, the circumference of the ring The length is 80mm, and the overlapping part is held by the suction cup. The test piece and the ring are fixed in a ring shape, and the ring is compressed at a compression speed of 3.3 mm/sec, and the point of contact with the ring is obtained through the indenter. When it is pressed into 10 mm, it is detected by the dynamometer The load value is measured.

When the ring stiffness of the dicing tape 13 is 20 mN or more, at the initial stage of bonding the semiconductor processing tape 10 to the semiconductor wafer W, only the front end of the dicing tape 13 is fixed to the ring frame, leaving At the same time as the spacer, even if it is stretched in the direction C in FIG. 3, the cutting tape 13 can be prevented from being deformed and extended. Therefore, it is possible to prevent the adhesive tape 15 from being wrinkled with the dicing tape 13 and the metal layer 14 provided thereon. When the ring stiffness of the dicing tape 13 is 200 mN or more, the semiconductor wafer W attached to the semiconductor processing tape 10 is diced (cut) into a wafer shape, and then the diced semiconductor wafer C is picked up. When the semiconductor wafer C is lifted from the base film 11 side through the lift pin, the metal layer 14 and the adhesive layer 12 cannot be sufficiently peeled off, and the semiconductor wafer C cannot be picked up well.

<metal layer 14>

The metal system constituting the metal layer 14 is not particularly limited, but examples For example, if at least one metal and/or alloys selected from the group consisting of aluminum, iron, titanium, tin, nickel, and copper are preferred from the point of laser identification. Among these, the thermal conductivity of copper, aluminum or these alloy systems is high and the heat dissipation effect by the metal layer can also be obtained. In addition, copper, aluminum, iron, nickel or these alloys can also obtain the bending suppression effect of electronic devices.

The thickness of the metal layer 14 can be appropriately determined in consideration of the handleability and processability of the semiconductor wafer W or the semiconductor wafer C, and is usually in the range of 2 to 200 μm, preferably 3 to 100 μm, more preferably 4 to 80 μm Good, 5~50μm is particularly ideal. When the metal layer system is 200 μm or more, curling becomes difficult, and when it is 50 μm or more, it is a problem of self-processability and productivity decreases. On the other hand, from the viewpoint of handleability, the minimum must be 2 μm or more.

<Adhesive layer 15>

The adhesive layer 15 is formed by thinning the adhesive in advance.

The adhesive layer 15 is formed by at least a thermosetting resin, and preferably formed by at least a thermosetting resin and a thermoplastic resin.

Examples of the thermoplastic resins include natural rubber, butyl rubber, isoprene rubber, neoprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, and polybutylene. Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon or 6,6-nylon, phenoxy resin, acrylic resin, PET (polyethylene terephthalate) Ester) or PBT (polyterephthalate Saturated polyester resins, etc., polyamidoamide imide resin, or fluororesin. The thermoplastic resin system can be used alone or in combination of two or more types. Among these thermoplastic resins, acrylic resins with few ionic impurities and high heat resistance, and acrylic resins that can ensure the reliability of semiconductor devices are particularly desirable.

The acrylic resin is not particularly limited, and it may be straight having a carbon number of 30 or less (ideally carbon number 4 to 18, more preferably carbon number 6 to 10, and particularly preferably carbon number 8 or 9). Polymers of one or more types of acrylic acid or methacrylic acid esters of chain or branched alkyl groups as components. That is, in the present invention, the acrylic resin refers to a broad meaning including methacrylic resin. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, pentyl, isopentyl, hexyl, and heptyl, 2-ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, dodecyl (lauryl), tridecyl, tetradecyl, n-eighteen Base, eighteen bases, etc.

In addition, as other monomers for forming acrylic resins (monomers other than acrylic acid or methacrylic acid alkyl esters having a carbon number of 30 or less), the system is not particularly limited, and examples thereof include acrylic acid, methyl alcohol Carboxylic acid containing acryl, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, crotonic acid or crotonic acid; monomers; anhydrides such as anhydrous maleic acid or itaconic anhydride Monomers such as 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate, 6-hydroxyhexyl (meth)acrylate, (A Group) 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth)acrylate, (Meth)acrylic acid 12-hydroxydodecyl or (4-hydroxymethylcyclohexane) methyl (meth)acrylic acid and other hydroxyl-containing monomers, such as styrene sulfonic acid, propenyl sulfonic acid, 2- Sulfur such as (meth)acrylamide-2-methylpropanesulfonic acid, (meth)acrylamide propanesulfonic acid, sulfopropyl (meth)acrylic acid or (meth)acryloxynaphthalenesulfonic acid The acid group contains a monomer, or the phosphate group such as 2-hydroxyethyl acryl acetyl phosphoric acid contains a monomer and the like. However, (meth)acrylic acid refers to acrylic acid and/or methacrylic acid, and has exactly the same meaning as the (meth)acrylic acid of the present invention.

In addition, examples of thermosetting resins include epoxy resins and phenol resins. Examples include amino resins, unsaturated polyester resins, polyurethane resins, polysiloxane resins, and thermosetting polyimides. Resin etc. The thermosetting resin system can be used alone or in combination of two or more types. As the thermosetting resin, particularly, an epoxy resin containing a small amount of ionic impurities that corrodes the semiconductor element is preferable. In addition, phenol resin can be suitably used as a curing agent for epoxy resin.

The epoxy resin is not particularly limited. For example, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A can be used. Epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, bisphenol novolac epoxy resin, cresol novolac epoxy resin, trihydroxyphenyl Difunctional epoxy resin or polyfunctional epoxy resin such as methane epoxy resin, tetraphenol ethane epoxy resin, etc., or hydantoin type epoxy resin, triglycidyl isourea cyanate type epoxy resin or Epoxy resins such as glycidylamine epoxy resins.

As examples of epoxy resins, phenol epoxy resins, biphenyl epoxy resins, trihydroxyphenylmethane epoxy resins, and tetraphenolethane epoxy resins are particularly preferred. These epoxy resins are rich in reactivity with phenol resin as a curing agent, and are superior in heat resistance.

Furthermore, the phenol resin is a structure that acts as a curing agent for epoxy resin, and examples thereof include phenol novolak resin, phenol aralkyl resin, cresol novolak resin, tert-butylphenol novolak resin, and nonylphenol. Phenolic resin such as phenol resin, phenol resin soluble in phenol, polyoxystyrene such as polyoxystyrene, etc. The phenol resin system can be used alone or in combination of two or more. Among these phenol resins, phenol novolak resin and phenol aralkyl resin are particularly desirable. It can improve the connection reliability of semiconductor devices.

The blending ratio of epoxy resin and phenol resin is, for example, for each equivalent of epoxy groups in the epoxy resin component, the hydroxyl groups in the phenol resin are preferably 0.5 to 2.0 equivalents. The best is 0.8 equivalent to 1.2 equivalent. That is, when the blending ratio of the two exceeds the aforementioned range, sufficient curing reaction cannot proceed, and the characteristics of the cured epoxy resin tend to deteriorate.

In addition, thermal curing accelerators using epoxy resin and phenol resin may also be used. The thermosetting accelerator catalyst system is not particularly limited, and can be appropriately selected from known thermosetting catalyst catalysts and used. The thermosetting accelerator catalyst system can be used alone or in combination of two or more types. As the thermosetting accelerator catalyst system, for example, an amine-based hardening accelerator, a phosphorus-based hardening accelerator, an imidazole-based hardening accelerator, a boron-based hardening accelerator, phosphorus- Boron-based hardening accelerator, etc.

As the curing agent of the epoxy resin, as described above, it is preferable to use a phenol resin, but known curing agents such as amines and acid anhydrides can also be used.

The adhesive layer 15 is important for the back surface (circuit non-formation surface) of the semiconductor wafer, which has adhesiveness (adhesion). Therefore, in order to previously crosslink the adhesive layer 15 to some extent, a polyfunctional compound that reacts with a functional group at the molecular chain terminal of the polymer or the like may be added as a crosslinking agent. With this, the adhesive properties at high temperature can be improved, and the heat resistance can be improved.

The crosslinking agent system is not particularly limited, and a known crosslinking agent can be used. Specifically, for example, isocyanate-based cross-linking agent, epoxy-based cross-linking agent, melamine-based cross-linking agent, peroxide-based cross-linking agent and others, urea-based cross-linking agent, metal alkoxide-based cross-linking Agent, metal chelate-based cross-linking agent, metal salt-based cross-linking agent, carbodiimide-based cross-linking agent, oxazoline-based cross-linking agent, aziridine-based cross-linking agent, amine-based cross-linking agent, etc. It is most suitable as a crosslinking agent-based isocyanate-based crosslinking agent or an epoxy-based crosslinking agent. Moreover, the said crosslinking agent system can be used individually or in combination of 2 or more types.

However, in the present invention, instead of using a cross-linking agent or using a cross-linking agent, a cross-linking treatment may be applied through irradiation with electron beams or ultraviolet rays.

For the adhesive layer 15, other additives can be appropriately blended as necessary. As other additives, for example, fillers (additives), flame retardants, silane coupling agents, ion trapping agents, etc. Examples include extenders, aging inhibitors, oxidation inhibitors, surfactants, and the like.

As the filler, it may be either an inorganic filler or an organic filler, but the inorganic filler is the best. Through the preparation of fillers such as inorganic fillers, the adhesive layer 15 can be improved in thermal conductivity and adjusted in elastic modulus. As inorganic fillers, such as silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride and other ceramics, aluminum, copper, silver, gold, nickel, chromium , Lead, tin, zinc, palladium, solder and other metals, or alloys, and other various inorganic powders such as carbon. The filler can be used alone or in combination of two or more. As a filler, silica or alumina is the most suitable as silica, especially fused silica. However, the average particle diameter of the inorganic filler is preferably in the range of 0.01 μm to 80 μm. In addition, when the thickness of the adhesive layer is 20 μm or less, it is preferably in the range of 0.01 μm to 5 μm. When the average particle diameter of the above-mentioned inorganic filler is within a specific range, the adhesion between the adhesive layer and the metal layer, the wafer, or the like can be achieved without deteriorating the adhesion. The average particle size of the inorganic filler is, for example, measured by a laser diffraction particle size distribution measuring device.

The compounding amount of the filler (especially the inorganic filler) is preferably 80% by weight or less (0% by weight to 80% by weight) for the organic resin component, and particularly 0% to 70% by weight is the most good.

In addition, examples of the flame retardant system include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. The flame retardant system can be used alone, Or a combination of two or more users. Examples of the silane coupling agent system include β-(3,4-epoxycyclohexane)ethyltrimethoxysilane, γ-glycidyl ether oxypropyltrimethoxysilane, and γ-glycidylpropyl group. Methyldimethoxysilane, etc. The silane coupling agent system can be used alone or in combination of two or more. Examples of the ion trapping agent include hydrotalcites, bismuth hydroxide and the like. The ion trapping agent can be used alone or in combination of two or more.

The adhesive layer 15 is an inorganic filler containing (A) epoxy resin, (B) hardened profile, (C) phenoxy resin, and (D) surface-treated from the viewpoint of adhesion and reliability, The content of (D) is preferably 40% by weight or more and 65% by weight or less for the total of (A) to (D).

When the (A) epoxy resin is used, high adhesion, water resistance, and heat resistance can be obtained. As the epoxy resin system, the above-mentioned known epoxy resins can be used. (B) For the curing agent, the above-mentioned known curing agent can be used.

(C) Phenoxy resin-based phenoxy resin-based molecular chain is long, similar to epoxy resin structure, and acts as a flexible material in a composition with a high cross-link density, because it imparts high toughness, It is a high-strength and strong-toughness composition. The ideal main structure of phenoxy resin is bisphenol A type, but other examples include bisphenol F phenoxy resin, bisphenol A/F mixed phenoxy resin or bromine. Commercialized phenoxy resin and other phenoxy resins.

(D) The surface-treated inorganic filler includes an inorganic filler surface-treated with a silane coupling agent. As inorganic As the filler, the above-mentioned well-known inorganic fillers can be used, but ideally silica or alumina. When surface treatment is carried out with a silane coupling agent, the dispersibility of the inorganic filler becomes good. Therefore, the adhesion to the metal layer can be improved due to its superior fluidity. In addition, since the inorganic filler can be used as a high filler, the water absorption rate can be reduced and the moisture resistance can be improved.

The surface treatment of the inorganic filler through the silane coupling agent is through a well-known method, based on dispersing the inorganic filler in the silane coupling agent solution, the hydroxyl groups present on the surface of the inorganic filler and hydrolyzed silane coupling agent are added The silanol group reaction of the hydrolyzable group such as the alkoxy group proceeds on the surface of the inorganic filler by generating Si-O-Si bonding.

By (D) the surface-treated inorganic filler content, for (A) epoxy resin, (B) hardener, (C) phenoxy resin, and (D) surface-treated inorganic filler In total, when it is 40% by weight or more, the water absorption rate and the saturation moisture absorption rate can be reduced, and the thermal conductivity of the adhesive layer is improved, and it is preferable that the heat dissipation effect can be obtained by the metal layer. By (D) the surface-treated inorganic filler content, for (A) epoxy resin, (B) hardened profile, (C) phenoxy resin, and (D) surface-treated inorganic filler When it is 65% by weight or less in total, it is preferable that the adhesive force with the metal layer or the wafer is excellent because the fluidity through the resin component can also be ensured.

Although the thickness of the adhesive layer 15 is not particularly limited, usually 3 to 100 μm is preferable, and 5 to 20 μm is more preferable. In addition, the adhesive layer 15 series It may be constituted by a single layer, and may be constituted by a plurality of layers.

The water absorption rate of the adhesive layer 15 is preferably 1.5 vol% or less. The measuring method of water absorption is as follows. That is, the adhesive layer 15 (film adhesive) with a size of 50×50 mm is taken as a sample, and the sample is dried in a vacuum desiccant at 120° C. for 3 hours, and after being allowed to cool in a desiccator, the dry mass is measured. And as M1. The sample was immersed in distilled water at room temperature for 24 hours and then taken out. The sample surface was wiped with filter paper and immediately weighed to obtain M2. The water absorption rate is calculated by the following formula (1).

Water absorption (vol%)=[(M2-M1)/(M1/d)]×100 (1) Here, d is the density of the film.

When the water absorption rate exceeds 1.5 vol%, the moisture absorbed by the water may cause cracking of the reflow during solder reflow.

The saturated moisture absorption rate of the adhesive layer 15 is preferably 1.0 vol% or less. The measurement method of saturated moisture absorption rate is as follows. That is, a circular adhesive layer 15 (film-like adhesive) with a diameter of 100 mm is taken as a sample, and the sample is dried in a vacuum desiccant at 120° C. for 3 hours. After being cooled in a desiccator, the drying is measured. Quality as M1. The sample was taken out in a constant temperature and humidity tank at 85°C and 85% RH for 168 hours, then taken out, and immediately weighed to obtain M2. The saturated moisture absorption rate is calculated by the following formula (2).

Saturated moisture absorption rate (vol%)=[(M2-M1)/(M1/d)]×100 (2) Here, d is the density of the film.

When the saturated moisture absorption rate exceeds 1.0vol%, the moisture absorption during reflow The value of the vapor pressure becomes higher, and there is a possibility that good reflow characteristics cannot be obtained.

The remaining volatile content of the adhesive layer 15 is preferably 3.0 wt% or less. The measurement method of the remaining volatile matter is as follows. That is, the adhesive layer 15 (film-like adhesive) with a size of 50×50 mm is taken as a sample, and the mass at the beginning of the sampling is measured as M1, and the sample is heated in a hot-air circulation thermostat at 200° C. for 2 hours. Weighing is performed as M2. The remaining volatile matter is calculated by the following formula (3).

Residual volatile matter (wt%)=[(M2-M1)/M1]×100 (3)

When the residual volatile content exceeds 3.0 wt%, the solvent is volatilized by heating during encapsulation, voids are generated inside the adhesive layer 15, and the encapsulation may be broken.

The ratio of the linear expansion coefficient of the linear expansion coefficient of the metal layer 14 to the adhesive layer 15 (linear expansion coefficient of the metal layer 14 /linear expansion coefficient of the adhesive layer 15) is preferably 0.3 or more. When the ratio is less than 0.3, peeling between the metal layer 14 and the adhesive layer 15 is likely to occur, and during encapsulation, encapsulation cracks may occur, and reliability may be lowered.

(Spacer)

The spacer is configured to protect the adhesive layer 15 while treating the adhesive layer 15 as good. As the spacer system, polyester (PET, PBT, PEN, PBN, PTT) system, polyolefin (PP, PE) system, copolymer (EVA, EEA, EBA) system can be used, and some of these materials can be replaced. Films that enhance adhesion or mechanical strength. another In addition, it can also be a laminate of such films.

The thickness of the spacer is not particularly limited, and may be appropriately set, but 25 to 100 μm is preferable.

In this embodiment, the metal layer 14 is directly provided on the adhesive layer 12, but the present invention includes a peeling layer for improving pick-up performance, or a semiconductor wafer C, a metal layer 14, and an adhesive layer 15 At the same time, the metal layer 14 is indirectly provided on the adhesive layer 12 in order to peel it from the adhesive layer 12 in order to impart the functional layer (for example, heat dissipation layer, etc.) of the semiconductor wafer C. In addition, there are cases where the adhesive layer 15 is indirectly provided on the metal layer 14 by the functional layer.

(Method for manufacturing tape 10 for semiconductor processing)

The manufacturing method of the adhesive tape 10 for semiconductor processing of this embodiment is demonstrated. First, the adhesive layer 15 can be formed by a conventional method of forming a film-like layer by using a resin composition. Specifically, for example, a suitable spacer (release paper, etc.) is coated with the aforementioned resin composition and dried (in the case where thermal curing is necessary, etc., heat treatment is performed as necessary for drying). ), a method of forming the adhesive layer 15 and the like. The aforementioned resin composition system may also be a solution and a dispersion liquid. Next, the obtained adhesive layer 15 and the separately prepared metal layer 14 are bonded together. As the metal layer 14, a commercially available metal foil may be used. After that, the adhesive layer 15 and the metal layer 14 are cut into a circular label shape of a specific size using a pressure cutter to remove unnecessary parts around.

Next, the dicing tape 13 is produced. The base film 11 can pass through The person who performs film formation by a conventionally known film formation method. Examples of the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method. Next, the adhesive composition is applied on the base film 11 and dried (heated and cross-linked if necessary) to form the adhesive layer 12. Examples of the coating method include roller coating, screen printing coating, and gravure printing coating. However, the adhesive composition may be directly applied to the base film 11 and the adhesive layer 12 may be formed on the base film 11. In addition, the adhesive composition may be applied to release paper that is subjected to a peeling treatment on the surface After the adhesive layer 12 is formed, the adhesive layer 12 may be transferred to the base film 11. As a result, the dicing tape 13 forming the adhesive layer 12 on the base film 11 is prepared.

After that, the metal layer 14 and the adhesive layer 12 are in contact with each other, and the spacer 13 provided with the circular metal layer 14 and the adhesive layer 15 is laminated with the cutting tape 13, and the cutting tape 13 is also pressed according to the situation. When the specifications are cut into a circular label shape of a specific size, etc., a tape 10 for semiconductor processing is produced.

<How to use>

Next, a method of manufacturing a semiconductor device using the tape 10 for semiconductor processing of this embodiment will be described simultaneously with reference to FIG. 2.

The manufacturing method of the semiconductor device includes at least: a process (mounting process) for attaching the semiconductor wafer W to the dicing tape-integrated semiconductor processing tape 10, and dicing the semiconductor wafer W to form a half The process of conducting wafer C (cutting process), and the process of peeling the semiconductor wafer C from the adhesive layer 12 of the dicing tape 13 (pick up process) at the same time as the semiconductor processing tape 10, and the flip chip connection of the semiconductor wafer C to Works on the body 16 (flip chip connection project).

[Loading Project]

First, the spacers optionally provided on the dicing tape-integrated semiconductor processing tape 10 are appropriately peeled off, and as shown in FIG. 2(A), the semiconductor wafer W is attached to the adhesive layer 15 so that It is then held and fixed (loaded into the project). At this time, the adhesive layer 15 is in an uncured state (including a semi-cured state). In addition, the dicing tape-integrated semiconductor processing tape 10 is attached to the back surface of the semiconductor wafer W. The back surface of the semiconductor wafer W refers to a surface opposite to the circuit surface (also referred to as a non-circuit surface, a non-electrode formation surface, etc.). The method of sticking is not particularly limited, but the method of pressing by heating is preferred. The crimping system is usually carried out while pressing by pressing means such as a roller. In addition, the heating system is performed by using a heating platform as a platform, and using a heating and pressing roller.

〔Cutting Engineering〕

Next, as shown in FIG. 2(B), the semiconductor wafer W is diced. As a result, the semiconductor wafer W is cut into a specific size and divided into pieces (small pieces), and the semiconductor wafer C is manufactured. The dicing is performed, for example, from the circuit surface side of the semiconductor wafer W according to a common method Row. In addition, in this process, for example, a cutting method called full dicing, which cuts into the tape 10 for semiconductor processing, can be used. The cutting device used in this project is not particularly limited, and conventionally known ones can be used. In addition, since the semiconductor wafer W is adhered and fixed with excellent adhesiveness through the adhesive tape 10 for semiconductor processing, it is possible to suppress chip defects or chip scattering, and also to prevent damage to the semiconductor wafer W. However, when expanding the dicing tape-integrated semiconductor processing tape 10, the expansion can be performed using a conventionally known expansion device.

〔Pickup Engineering〕

As shown in FIG. 2(C), the semiconductor wafer C is picked up, and the semiconductor wafer C is peeled from the dicing tape 13 simultaneously with the adhesive layer 15 and the metal layer 14. The method of pickup is not particularly limited, and various conventionally known methods can be used. For example, a method of picking up each semiconductor wafer C from the base film 11 side of the tape 10 for semiconductor processing via a needle-like object, and picking up the semiconductor wafer C on the top via a pick-up device, etc. However, the back surface of the picked semiconductor wafer C is protected by the metal layer 14.

[Flip Chip Connection Engineering]

As shown in FIG. 2(D), the picked-up semiconductor wafer C is fixed to the object 16 such as a substrate via a flip chip bonding method (chip flip chip mounting method). Specifically, the semiconductor wafer C The circuit surface of C (also referred to as the surface, the circuit pattern forming surface, the electrode forming surface, etc.) has a form facing the object 16, and the object 16 is fixed in accordance with a common method. For example, first, the flux electrode is attached to the bump electrode 17 as a connection portion formed on the circuit surface side of the semiconductor wafer C. Next, the bump electrode 17 of the semiconductor wafer C is brought into contact with the conductive material 18 (solder, etc.) used for bonding by the connection pad of the target body 16, and at the same time, the bump electrode 17 and the conductive material 18 are pressed When melting, the electrical conduction between the semiconductor wafer C and the object 16 is ensured, so that the semiconductor wafer C can be fixed to the object 16 (flip chip bonding process). At this time, a gap is formed between the semiconductor wafer C and the object 16, and the distance between the gaps is generally about 30 μm to 300 μm. However, after the semiconductor wafer C is flip-chip bonded (flip-chip connected) to the object 16, the flux remaining in the opposing surface or gap between the semiconductor wafer C and the object 16 is washed and removed. The sealing material (sealing resin, etc.) is filled and closed.

As the object 16, various substrates such as lead frames, circuit boards (wiring circuit boards, etc.) can be used. The material of such a substrate is not particularly limited, but ceramic substrates and plastic substrates may be mentioned. Examples of the plastic substrate system include an epoxy substrate, a bismaleimide triazine substrate, and a polyimide substrate. In addition, when another semiconductor wafer is used as the object 16 and the flip-chip is connected to the semiconductor wafer C, it may be used as a crystal carrier structure.

<Example>

Next, in order to make the effect of the present invention clearer, the examples and comparative examples will be described in detail, but the present invention is not limited to those examples.

(1) Production of cutting tape

(Adjustment of adhesive layer composition)

As an acrylic copolymer (A1) having a functional group, it is composed of 2-ethylhexyl acrylate, 2-hydroxyethyl acrylate and methacrylic acid, and the ratio of preparing 2-ethylhexyl acrylate is 60% Ear %, copolymer with a mass average molecular weight of 700,000. Next, the iodine value is 20, and isocyanoethyl 2-methacrylate is added to prepare an acrylic copolymer (a-, a glass transition temperature of -50°C, a hydroxyl value of 10 mgKOH/g, and an acid value of 5 mgKOH/g). 1).

For 100 parts by mass of acrylic copolymer (a-1), 5 parts by mass of coronate L (trade name, manufactured by TOSOH Co., Ltd.) is added as polyisocyanate, and 3 is added as a photopolymerization initiator A mixture of Esacure KIP 150 (trade name, manufactured by Lamberti) was dissolved in ethyl acetate and stirred to prepare an adhesive composition.

The following structure was produced as a base film.

(Substrate film 1)

Resin beads of a mixture of polypropylene PP and thermoplastic elastomer HSBR (PP:HSBR=80:20) melted at 200°C using an extruder It was formed into a long film shape with a thickness of 100 μm to produce a base film 1. F-300SP (trade name) manufactured by Idemitsu Petrochemical Co., Ltd. was used as the polypropylene PP system, and DYNARON 1320P (trade name) manufactured by JSR Co., Ltd. was used as the thermoplastic elastomer HSBR.

(Substrate film 2)

Resin beads of ethylene-acrylic acid copolymer ionic polymer melted at 200° C. were formed into a long film with a thickness of 150 μm using an extruder, and a base film 2 was produced. For the ethylene-acrylic acid copolymer ionic polymer, HIMILAN 1706 (trade name) manufactured by Japan Dupont-Mitsui Polychemicals Co., Ltd. was used.

(Substrate film 3)

Resin beads of ethylene-acrylic acid copolymer ionic polymer melted at 200° C. were formed into a long film shape with a thickness of 100 μm using an extruder to produce a base film 3. For the ethylene-acrylic acid copolymer ionic polymer, HIMILAN 1601 (trade name) manufactured by Japan Dupont-Mitsui Polychemicals Co., Ltd. was used.

(Base film 4)

Resin beads of ethylene-acrylic acid copolymer ionic polymer melted at 200° C. were formed into a long film with a thickness of 100 μm using an extruder to produce a base film 4. The ethylene-acrylic acid copolymer ionic polymer is HIMILAN manufactured by Japan Dupont-Mitsui Polychemicals Co., Ltd. 1855 (trade name).

(Substrate film 5)

The resin beads of the ethylene-methacrylic acid copolymer melted at 200° C. were formed into a long film with a thickness of 100 μm using an extruder, and a base film 5 was produced. For the ethylene-methacrylic acid copolymerization system, Nucrel NO35C (trade name) manufactured by Japan Dupont-Mitsui Polychemicals Co., Ltd. was used.

(Base film 6)

The resin beads of polyethylene terephthalate were melted at 280° C., and formed into a long film with a thickness of 100 μm using an extruder to produce a base film 6. For polyethylene terephthalate, COSMO SHINE 4100 (trade name) manufactured by Japan Toyobo Co., Ltd. was used.

<Cutting tape (1)>

The above-mentioned adhesive composition was released from the release liner made of polyethylene terephthalate film, and the thickness after drying was applied to a thickness of 10 μm, and then dried at 110° C. for 3 minutes. , Bonded to the base film 1 to produce a cutting tape (1).

<Cutting tape (2)>

A dicing tape (2) was produced in the same manner as the dicing tape (1) except for the base film 2 described above.

<Cutting tape (3)>

A dicing tape (3) was produced using the same method as the dicing tape (1) except for the base film 3 described above.

<Cutting tape (4)>

A dicing tape (4) was produced in the same manner as the dicing tape (1) except for the base film 4 described above.

<Cutting tape (5)>

A dicing tape (5) was produced in the same manner as the dicing tape (1) except for the base film 5 described above.

<Cutting tape (6)>

A dicing tape (6) was produced in the same manner as the dicing tape (1) except for the base film 6 described above.

(2) Fabrication of adhesive layer

<Adhesive layer (1)>

For epoxy resin "1002" (trade name, manufactured by Mitsubishi Chemical Corporation, solid bisphenol A type epoxy resin, epoxy equivalent 600) 40 mass points, as epoxy resin "806" (trade name, Mitsubishi Chemical Co., Ltd., bisphenol F type epoxy resin, epoxy equivalent 160, specific gravity 1.20) 100 parts by mass, as a hardener "Dyhard100SF" (commodity Name, Degussa, dicyandiamide) 5 mass points, as a silica filler "SO-C2" (trade name, manufactured by ADMAFINE Co., Ltd., average particle size 0.5 μm) 350 mass points, and as silica Filler "Aerosil R972" (trade name, manufactured by Japan Aerosil Co., Ltd., with an average primary particle diameter of 0.016 μm) 3 mass parts, with methyl ethyl ketone, stirred and mixed to make a uniform composition Thing.

In addition, as a phenoxy resin, 100 parts by mass of "PKHH" (trade name, manufactured by INCEM, mass average molecular weight 52,000, glass transition temperature 92°C), and "KBM-802" (product) as a coupling agent Name, Shin-Etsu Chemical Co., Ltd., mercaptopropyltrimethoxysilane) 0.6 mass points, and the addition of "CUREZOL 2PHZ-PW" as a hardening accelerator (trade name, manufactured by Shikoku Chemical Co., Ltd., 2-phenyl -4,5-dihydroxymethylimidazole, decomposition temperature 230°C) 0.5 mass parts, stirring and mixing until it becomes uniform. Furthermore, these were filtered with a 100-mesh filter, and then deaerated by vacuum to obtain a varnish of the adhesive composition b-1.

For the spacer made of the polyethylene terephthalate film released, the adhesive composition b-1 was coated with a thickness of 8 μm after drying, and then dried at 110°C for 5 minutes. An adhesive film is formed on the spacer to form the adhesive layer (1).

(3) Metal layer

The following structure is prepared as a metal layer.

<Metal layer (1)>

1085 (trade name, made by Japan Toyo Aluminum Co., Ltd., aluminum foil, thickness 12 μm, thermal conductivity 221 W/m.K)

<Metal layer (2)>

Rolled copper foil (trade name, UACJ Co., Ltd., refined copper foil, thickness 18μm, thermal conductivity 391W/m.K)

<Metal Layer (3)>

C18040 (trade name, UACJ Co., Ltd., copper alloy foil, thickness 18μm, thermal conductivity 322W/m.K)

<Metal Layer (4)>

SUS304 (trade name, manufactured by Nippon Steel & Sumitomo Materials Co., Ltd., stainless steel foil, thickness 20 μm, thermal conductivity 16.3 W/m.K)

(4) Fabrication of tape for semiconductor processing

<Example 1>

The adhesive layer (1) and the metal layer (1) obtained as above were bonded under the conditions of a bonding angle of 120°, a pressure of 0.2 MPa, and a speed of 10 mm/s to produce a single-sided bonding film. In the shape that can fit the dicing tape (1) to the ring frame, the single-sided adhesive film is pre-cut into a shape that can cover the wafer, and the adhesive layer of the dicing tape (1) and the single-sided adhesive are thin On the metal layer side of the film, an adhesive layer was exposed on one side and then adhered around the film, and the semiconductor processing tape of Example 1 was produced.

<Examples 2 to 7, Comparative Examples 1 to 3>

Except for the combination of the dicing tape, the adhesive composition, and the metal layer to form the combination described in Table 1, the semiconductor processing tapes of Examples 2 to 7 and Comparative Examples 1 to 3 were prepared by the same method as Example 1.

The tapes for semiconductor processing of Examples 1 to 7 and Comparative Examples 1 to 3 were subjected to the following measurement and evaluation. The results are shown in Table 1.

(Measurement of ring stiffness)

For the dicing tape used in each example and comparative example, the ring stiffness was measured under the following conditions. The measurement results are shown in Table 1.

Conditions for measuring ring stiffness:

Device; ring stiffness measuring device DA (manufactured by Toyo Seiki Co., Ltd., trade name)

Ring (sample) shape; length 80mm, width 25mm

Pressing speed of indenter; 3.3mm/sec

Measurement data

After cutting the test piece of 25mm wide dicing tape, the surface to which the adhesive layer is attached is bent into an omega-shaped ring as the inner side of the ring, and then the two ends in the longitudinal direction are overlapped, and the circumference of the ring is Become 80mm Ground, grasp the overlapping part with suction cup. The test piece and the ring are fixed in a ring shape, and the ring is compressed at a compression speed of 3.3 mm/sec, and the point of contact with the ring is obtained through the indenter. When it is pressed into 10 mm, it is detected by the dynamometer The load value is measured.

(Assessment of cascadability)

The semiconductor processing tapes of the respective examples and comparative examples were bonded to 10 semiconductor wafers under the following conditions. Observe the tape for semiconductor processing that is attached to the semiconductor wafer. In both of the conditions 1 and 2, no one has wrinkles in the metal layer and can be bonded as an excellent product. In condition 1, it is in the metal layer There are wrinkles, but in condition 2, no one has wrinkles in the metal layer and can be bonded as a good product. ○ Even if there is one piece in both conditions 1 and 2, there is a wrinkle in the metal layer as a defect × while evaluating. The evaluation results are shown in Table 1.

<Lamination Condition 1>

Laminating device: Wafer mounting machine DAM-812M (Takatori Co., Ltd., trade name)

Lamination speed: 30mm/sec

Stacking pressure: 0.1MPa

Lamination temperature: 90℃

<Lamination Condition 2>

Stacking device: wafer mounting machine DAM-812M (Co., Ltd. (Made by Takatori, brand name)

Stacking speed: 10mm/sec

Stacking pressure: 0.1MPa

Lamination temperature: 90℃

(Evaluation of Pickup)

The semiconductor wafers attached to the tapes for semiconductor processing according to the respective examples and comparative examples were cut into 15 along the line to be divided which was set using DAD340 (manufactured by DISCO Co., Ltd., trade name) as a cutting device. ×8mm angle. After irradiating 200mJ/mm ² ultraviolet rays from the substrate film side of the dicing tape to harden the adhesive layer, the diced semiconductor wafer was used as a die pickup device using CAP-300II (manufactured by canon-machinery Co., Ltd.) To pick up. The pin height is set to 400 μm. Picking up 100 semiconductor wafers, 95 or more can be picked up without problems, as a good product ○, and those who fail to pick up less than 95 are evaluated as a defective product ×. However, since Comparative Example 1 and Comparative Example 3 failed to adhere to the semiconductor wafer well, the pickup test was not carried out.

<Evaluation of Laser Significance>

The semiconductor wafer obtained by the evaluation of the pickability is subjected to character processing under the following conditions. The evaluation is conducted through the following evaluation criteria. Characters formed by laser marking can be recognized by visual inspection (visual distance: about 30cm), as good products ○ and cannot be recognized by law In this case, it is evaluated as a defective product ×.

<Laser marking conditions>

Laser marking device: MD-X1000 (made by KEYENCE Co., Ltd., trade name)

Wavelength: 1064nm

Intensity: 13W

Scanning speed: 500mm/sec

As shown in Table 1, the ring stiffness of the dicing tape for semiconductor processing of Examples 1 to 7 is 21 mN or more and 174 mN or less, which is less than 20 mN and less than 200 mN as specified in the patent application range. Be a good result.

On the other hand, the tapes for dicing tapes for semiconductor processing of Comparative Examples 1 and 3 have a ring stiffness of less than 20 mN, resulting in poor stackability. In addition, the ring stiffness of the dicing tape for semiconductor processing tape of Comparative Example 2 is more than 200 mN or more, which results in poor pick-up properties.

10‧‧‧Tape for semiconductor processing

11‧‧‧ Base film

12‧‧‧Adhesive layer

13‧‧‧Cutting tape

14‧‧‧Metal layer

15‧‧‧ Adhesive layer

Claims (3)

An adhesive tape for semiconductor processing, characterized by having: a dicing tape having a base film and an adhesive layer; and a metal layer provided on the adhesive layer; and an adhesive layer provided on the metal layer to adhere to the metal layer Adhesive layer on the back of the semiconductor wafer; the ring stiffness of the dicing tape is more than 20mN, less than 200mN; the water absorption of the adhesive layer is 1.5vol% or less; the residual volatile content of the adhesive layer is 3.0wt% The ratio of the linear expansion coefficient of the metal layer to the linear expansion coefficient of the adhesive layer is 0.3 or more. The tape for semiconductor processing as described in item 1 of the patent application scope, wherein the metal layer is at least one metal selected from the group consisting of aluminum, iron, titanium, tin, nickel and copper and/or alloys thereof Anything. For the tape for semiconductor processing as described in item 1 or 2 of the patent application, the thickness of the dicing tape is 55 μm or more and less than 215 μm.

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