TWI696198B - Coil parts - Google Patents

Coil parts Download PDF

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Publication number
TWI696198B
TWI696198B TW106110097A TW106110097A TWI696198B TW I696198 B TWI696198 B TW I696198B TW 106110097 A TW106110097 A TW 106110097A TW 106110097 A TW106110097 A TW 106110097A TW I696198 B TWI696198 B TW I696198B
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Taiwan
Prior art keywords
axis direction
coil
conductor
insulator
value
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TW106110097A
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Chinese (zh)
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TW201743343A (en
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関口貴之
荻野剛士
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太陽誘電股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/32Insulating of coils, windings, or parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/29Terminals; Tapping arrangements for signal inductances
    • H01F27/292Surface mounted devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/30Fastening or clamping coils, windings, or parts thereof together; Fastening or mounting coils or windings on core, casing, or other support

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

本發明提供一種謀求小型化並且高特性之線圈零件。本發明之一形態之線圈零件具備絕緣體部及線圈部。上述絕緣體部於第1軸方向上具有寬度方向,於第2軸方向上具有長度方向,於第3軸方向上具有高度方向,且由非磁性材料構成。上述線圈部具有繞上述第1軸方向捲繞之環繞部,且配置於上述絕緣體部之內部。上述絕緣體部之高度尺寸相對於長度尺寸之比率,係沿上述第3軸方向之上述環繞部之內周部間之高度尺寸相對於沿上述第2軸方向之上述環繞部之內周部間之長度尺寸之比率的1.5倍以下。The present invention provides a coil component that seeks miniaturization and high characteristics. A coil component according to an aspect of the present invention includes an insulator portion and a coil portion. The insulator portion has a width direction in the first axis direction, a length direction in the second axis direction, and a height direction in the third axis direction, and is made of a non-magnetic material. The coil portion has a surrounding portion wound around the first axis direction, and is disposed inside the insulator portion. The ratio of the height dimension of the insulator portion to the length dimension is the height dimension between the inner peripheral portions of the surrounding portion along the third axis direction relative to the inner peripheral portion of the surrounding portion along the second axis direction The ratio of length to size is 1.5 times or less.

Description

線圈零件Coil parts

本發明係關於一種具有絕緣體部及設置於其內部之線圈部之線圈零件。The present invention relates to a coil component having an insulator portion and a coil portion provided therein.

一直以來,於電子機器等上搭載有線圈零件,尤其可攜式機器中使用之線圈零件呈晶片形狀,且表面安裝於內置於可攜式機器等中之電路基板上。作為先前技術之例,例如於專利文獻1中,揭示有一種晶片線圈,其係以如下方式形成,即,於包含硬化物之絕緣性樹脂之內部,內置有至少一端連接於外部電極之螺旋狀之導體,且導體之螺旋方向與安裝之基板面平行。同樣地於專利文獻2中,揭示有一種積層型之線圈零件,其係以線圈狀導體之軸心方向與基板面平行之方式形成。進而於專利文獻3中,揭示有一種線圈零件,其具備包含樹脂之絕緣體、設置於絕緣體內之線圈狀之內部導體、及與內部導體電性連接之外部電極,絕緣體係長度為L、寬度為W、高度為H之長方體狀,關於L、W、H,L>W³H之關係成立,外部電極在與絕緣體之高度方向H垂直之一面上,沿長度方向L觀察時於上述一面之兩端部附近,分別各由1個導體而形成,內部導體具有與絕緣體之寬度方向W大致平行之線圈軸。[先前技術文獻][專利文獻][專利文獻1]日本專利特開2006-324489號公報[專利文獻2]日本專利特開2006-32430號公報[專利文獻3]日本專利特開2014-232815號公報Conventionally, coil parts are mounted on electronic devices and the like, and in particular, the coil parts used in portable devices have a wafer shape and are surface-mounted on a circuit board built in portable devices and the like. As an example of the prior art, for example, in Patent Document 1, there is disclosed a wafer coil formed in such a manner that a spiral shape in which at least one end is connected to an external electrode is built inside an insulating resin containing a hardened material Conductor, and the spiral direction of the conductor is parallel to the surface of the mounted substrate. Similarly, Patent Document 2 discloses a laminated coil component which is formed such that the axial direction of the coil-shaped conductor is parallel to the substrate surface. Furthermore, Patent Document 3 discloses a coil component including an insulator including a resin, a coil-shaped internal conductor provided in the insulator, and an external electrode electrically connected to the internal conductor. The length of the insulation system is L and the width is W, a rectangular parallelepiped with a height of H, the relationship between L, W, H, and L>W³H is established. The external electrodes are on a surface perpendicular to the height direction H of the insulator, when viewed along the length direction L at both ends of the above surface The vicinity is formed of one conductor each, and the inner conductor has a coil axis that is substantially parallel to the width direction W of the insulator. [Prior Art Literature] [Patent Literature] [Patent Literature 1] Japanese Patent Laid-Open No. 2006-324489 [Patent Literature 2] Japanese Patent Laid-Open No. 2006-32430 [Patent Literature 3] Japanese Patent Laid-Open No. 2014-232815 Bulletin

[發明所欲解決之問題]近年來,伴隨電子機器之小型化、薄型化,搭載於該電子機器上之線圈零件之進一步小型化不斷推進。然而,伴隨線圈零件之小型化,線圈零件之特性之降低變得顯著。因此,要求謀求線圈零件之小型化、並且能夠滿足特性需求之技術。鑒於如上情形,本發明之目的在於提供一種謀求小型化並且高特性之線圈零件。[解決問題之技術手段]為達成上述目的,本發明之一形態之線圈零件具備絕緣體部及線圈部。上述絕緣體部於第1軸方向上具有寬度方向,於第2軸方向上具有長度方向,於第3軸方向上具有高度方向,且由非磁性材料構成。上述線圈部具有繞上述第1軸方向捲繞之環繞部,且配置於上述絕緣體部之內部。上述絕緣體部之高度尺寸相對於長度尺寸之比率,係沿上述第3軸方向之上述環繞部之內周部間之高度尺寸相對於沿上述第2軸方向之上述環繞部之內周部間之長度尺寸之比率的1.5倍以下。典型而言,沿上述第3軸方向之上述環繞部之內周部間之高度尺寸相對於沿上述第2軸方向之上述環繞部之內周部間之長度尺寸之比率為0.6以上且1.0以下。典型而言,自上述第1軸方向觀察時由上述環繞部之內周部劃分之面積相對於上述絕緣體部之面積之比率為0.22以上且0.45以下。典型而言,上述絕緣體部係由陶瓷或樹脂材料構成。自上述第1軸方向觀察時由上述環繞部之內周部劃分之面積相對於上述絕緣體部之面積之比率為0.22以上且0.65以下。上述絕緣體部係由陶瓷或樹脂材料構成。上述絕緣體部亦可具有長方體形狀。於該情形時,上述線圈零件進而具備外部電極,其與上述線圈部電性連接,且僅配置於上述絕緣體部之1面。上述線圈部與上述外部電極亦可藉由與上述線圈部之端部連接之連接用通孔導體而電性連接。上述通孔導體之與上述第3軸正交之剖面具有較上述線圈部之端部之與上述第3軸正交之剖面大的剖面形狀。上述外部電極亦可具有與上述絕緣體部之上述1面對向之內表面部、及設置於上述內表面部且沒入上述1面之複數個突起部。[發明之效果]根據本發明,可提供一種謀求小型化並且高特性之線圈零件。[Problems to be Solved by the Invention] In recent years, with the miniaturization and thinning of electronic equipment, the further miniaturization of coil components mounted on the electronic equipment has continued to advance. However, with the miniaturization of the coil parts, the reduction in the characteristics of the coil parts becomes significant. Therefore, there is a demand for a technology that can reduce the size of coil components and meet the characteristics. In view of the above circumstances, an object of the present invention is to provide a coil component that is miniaturized and has high characteristics. [Technical Means for Solving the Problems] In order to achieve the above object, a coil component according to an aspect of the present invention includes an insulator portion and a coil portion. The insulator portion has a width direction in the first axis direction, a length direction in the second axis direction, and a height direction in the third axis direction, and is made of a non-magnetic material. The coil portion has a surrounding portion wound around the first axis direction, and is disposed inside the insulator portion. The ratio of the height dimension of the insulator portion to the length dimension is the height dimension between the inner peripheral portions of the surrounding portion along the third axis direction relative to the inner peripheral portion of the surrounding portion along the second axis direction The ratio of length to size is 1.5 times or less. Typically, the ratio of the height dimension between the inner peripheral portions of the surrounding portion along the third axis direction to the length dimension between the inner peripheral portions of the surrounding portion along the second axis direction is 0.6 or more and 1.0 or less . Typically, the ratio of the area divided by the inner peripheral portion of the surrounding portion to the area of the insulator portion when viewed from the first axis direction is 0.22 or more and 0.45 or less. Typically, the insulator portion is made of ceramic or resin material. The ratio of the area divided by the inner peripheral portion of the surrounding portion to the area of the insulator portion when viewed from the first axis direction is 0.22 or more and 0.65 or less. The insulator part is made of ceramic or resin material. The insulator portion may have a rectangular parallelepiped shape. In this case, the coil component further includes an external electrode, which is electrically connected to the coil portion, and is arranged only on one surface of the insulator portion. The coil portion and the external electrode may be electrically connected by a through-hole conductor connected to an end of the coil portion. The cross section of the through-hole conductor orthogonal to the third axis has a larger cross-sectional shape than the cross section of the end of the coil portion orthogonal to the third axis. The external electrode may have an inner surface portion facing the one face of the insulator portion, and a plurality of protrusions provided on the inner surface portion and submerged in the one face. [Effect of the Invention] According to the present invention, it is possible to provide a coil component that is compact and has high characteristics.

以下,一面參照圖式一面說明本發明之實施形態。<第1實施形態>[基本構成]圖1係本發明之一實施形態之電子零件之概略透視立體圖,圖2係其概略透視側視圖,圖3係其概略透視俯視圖。再者,於各圖中,X軸、Y軸及Z軸方向表示相互正交之3軸方向。本實施形態之電子零件100係作為表面安裝用之線圈零件而構成。電子零件100具備絕緣體部10、內部導體部20、及外部電極30。絕緣體部10具有頂面101、底面102、第1端面103、第2端面104、第1側面105及第2側面106,且形成為於X軸方向上具有寬度方向、於Y軸方向上具有長度方向、且於Z軸方向上具有高度方向之長方體形狀。絕緣體部10設計為例如寬度尺寸為0.05~0.2 mm,長度尺寸為0.1~0.4 mm,高度尺寸為0.05~0.4 mm。於本實施形態中,寬度尺寸為約0.2 mm,長度尺寸為約0.35 mm,高度尺寸為約0.2 mm。絕緣體部10具有本體部11與頂面部12。本體部11內置有內部導體部20,且構成絕緣體部10之主要部分。頂面部12構成絕緣體部10之頂面101。頂面部12例如亦可作為顯示電子零件100之型號等之印刷層而構成。本體部11及頂面部12係由以樹脂為主體之絕緣材料構成。作為構成本體部11之絕緣材料,可使用藉由熱、光、化學反應等而硬化之樹脂,可舉出例如聚醯亞胺、環氧樹脂、液晶聚合物等。另一方面,頂面部12亦可由除上述材料之外之樹脂膜等構成。或者絕緣體部10亦可由玻璃等陶瓷材料而構成。絕緣體部10亦可使用於樹脂中包含填料之複合材料。作為填料,典型而言,可舉出二氧化矽、氧化鋁、氧化鋯等陶瓷粒子。陶瓷粒子之形狀並未特別限定,典型而言為球狀,但並不限於此,亦可為針狀、鱗片狀等。內部導體部20設置於絕緣體部10之內部。內部導體部20具有複數個柱狀導體21、及複數個連結導體22,藉由該等複數個柱狀導體21及連結導體22而構成線圈部20L。複數個柱狀導體21形成為具有與Z軸方向平行之軸心之大致圓柱形狀。複數個柱狀導體21係由在大致Y軸方向上相互對向之2個導體群而構成。構成其中之一個導體群之第1柱狀導體211於X軸方向上隔開特定之間隔而排列,構成另一個導體群之第2柱狀導體212亦同樣地於X軸方向上隔開特定之間隔而排列。再者,所謂大致圓柱形狀,除軸直角方向(與軸心垂直之方向)之剖面形狀為圓形之柱體之外,亦包含上述剖面形狀為橢圓形或長圓形之柱體,作為橢圓形或長圓形係指例如長軸/短軸之比為3以下者。第1及第2柱狀導體211、212係以分別相同直徑及相同高度而構成。於圖示之例中第1及第2柱狀導體211、212分別各設置5根。如下所述,第1及第2柱狀導體211、212係藉由將複數個通孔導體於Z軸方向積層而構成。再者,所謂大致相同直徑係指用以抑制電阻之增加者,且於相同方向觀察之尺寸之不均例如落在10%以內,所謂大致相同高度係指用以確保各層之堆積精度者,且高度之不均例如落在±1 μm之範圍內。複數個連結導體22係由與XY平面平行地形成且於Z軸方向上相互對向之2個導體群而構成。構成其中之一個導體群之第1連結導體221沿Y軸方向延伸,且於X軸方向上隔開間隔而排列,將第1及第2柱狀導體211、212之間各自連接。構成另一個導體群之第2連結導體222相對於Y軸方向以特定角度傾斜而延伸,且於X軸方向上隔開間隔而排列,將第1及第2柱狀導體211、212之間各自連接。於圖示之例中,第1連結導體221係由5個連結導體構成,第2連結導體222係由4個連結導體構成。於圖1中,第1連結導體221與特定之一組柱狀導體211、212之上端連接,第2連結導體222與特定之一組柱狀導體211、212之下端連接。更詳細而言,第1及第2柱狀導體211、212與第1及第2連結導體221、222構成線圈部20L之環繞部Cn(C1~C5),該等環繞部Cn以繞X軸方向描繪矩形之螺旋之方式而相互連接。藉此,於絕緣體部10之內部,形成於X軸方向上具有軸心(線圈軸)之開口形狀為矩形之線圈部20L。本實施形態中環繞部Cn係由5個環繞部C1~C5構成。各環繞部C1~C5之開口形狀形成為分別大致相同之形狀。內部導體部20進而具有引出部23、及梳齒塊部24,經由該等而將線圈部20L連接至外部電極30(31、32)。引出部23具有第1引出部231、及第2引出部232。第1引出部231連接於構成線圈部20L之一端之第1柱狀導體211之下端,第2引出部232連接於構成線圈部20L之另一端之第2柱狀導體212之下端。第1及第2引出部231、232配置於與第2連結導體222相同之XY平面上,且與Y軸方向平行地形成。梳齒塊部24具有於Y軸方向以相互對向之方式配置之第1及第2梳齒塊部241、242。第1及第2梳齒塊部241、242中,各者之梳齒部之前端於圖1中朝向上方而配置。於絕緣體部10之兩端面103、104及底面102,露出有梳齒塊部241、242之一部分。於第1及第2梳齒塊部241、242各者之特定之梳齒部之間,分別連接有第1及第2引出部231、232(參照圖3)。於第1及第2梳齒塊部241、242各者之底部,分別設置有構成外部電極30之基底層之導體層301、302(參照圖2)。外部電極30構成表面安裝用之外部端子,且具有於Y軸方向上相互對向之第1及第2外部電極31、32。第1及第2外部電極31、32形成於絕緣體部10之外表面之特定區域。更具體而言,如圖2所示,第1及第2外部電極31、32具有被覆絕緣體層10之底面102之Y軸方向兩端部之第1部分30A、及將絕緣體層10之兩端面103、104跨及特定之高度而被覆之第2部分30B。第1部分30A經由導體層301、302而與第1及第2梳齒塊部241、242之底部電性連接。第2部分30B以被覆第1及第2梳齒塊部241、242之梳齒部之方式形成於絕緣體層10之端面103、104。柱狀導體21、連結導體22、引出部23、梳齒塊部24及導體層301、302例如係由Cu(銅)、Al(鋁)、Ni(鎳)等金屬材料構成,於本實施形態中均係由銅或其合金之鍍覆層而構成。第1及第2外部電極31、32例如由Ni/Sn鍍覆而構成。圖4係將電子零件100之上下反轉而表示之概略透視側視圖。如圖4所示,電子零件100係由膜層L1、及複數個電極層L2~L6之積層體而構成。於本實施形態中,藉由將膜層L1及電極層L2~L6自頂面101向底面102於Z軸方向上依序積層而製作。層之數量並未特別限定,此處設為6層進行說明。膜層L1及電極層L2~L6包含構成該各層之絕緣體部10及內部導體部20之要素。圖5A~F分別係圖4中之膜層L1及電極層L2~L6之概略俯視圖。膜層L1係由絕緣體部10之形成頂面101之頂面部12而構成(圖5A)。電極層L2包含構成絕緣體部10(本體部11)之一部分之絕緣層110(112)、及第1連結導體221(圖5B)。電極層L3包含絕緣層110(113)、及構成柱狀導體211、212之一部分之通孔導體V1(圖5C)。電極層L4除絕緣層110(114)、通孔導體V1之外,還包含構成梳齒塊部241、242之一部分之通孔導體V2(圖5D)。電極層L5除絕緣層110(115)、通孔導體V1、V2之外,還包含引出部231、232或第2連結導體222(圖5E)。而且,電極層L6包含絕緣層110(116)、及通孔導體V2(圖5F)。電極層L2~L6隔著接合面S1~S4(圖4)而於高度方向上積層。因此,各絕緣層110或通孔導體V1、V2於相同高度方向上具有邊界部。而且,電子零件100藉由將各電極層L2~L6自電極層L2依序製作並積層之增層法而製造。[基本製造過程]繼而,對電子零件100之基本製造過程進行說明。電子零件100係以晶圓級同時製作複數個,且於製作後對每個元件進行單片化(晶片化)。圖6~圖8係說明電子零件100之製造步驟之一部分之元件單位區域之概略剖視圖。作為具體之製造方法,於支持基板S上貼合構成頂面部12之樹脂膜12A(膜層L1),且於其上依序製作電極層L2~L6。對於支持基板S,可使用例如矽基板、玻璃基板、或藍寶石基板。典型而言,反覆實施以下步驟,即,藉由電性鍍覆法而製作構成內部導體部20之導體圖案,且利用絕緣性樹脂材料被覆該導體圖案而製作絕緣層110。圖6及圖7表示電極層L3之製造步驟。於該步驟中,首先,於電極層L2之表面例如藉由濺鍍法等形成用以電性鍍覆之籽晶層(供電層)SL1(圖6A)。籽晶層SL1只要係導電性材料則並無特別限定,例如由Ti(鈦)或Cr(鉻)構成。電極層L2包含絕緣層112、及連結導體221。連結導體221以與樹脂膜12A相接之方式設置於絕緣層112之下表面。繼而,於籽晶層SL1上形成抗蝕劑膜R1(圖6B)。依序進行對抗蝕劑膜R1之曝光、顯影等處理,藉此經由籽晶層SL1而形成具有與構成柱狀導體21(211、212)之一部分之通孔導體V13對應之複數個開口部P1之抗蝕劑圖案(圖6C)。其後,執行去除開口部P1內之抗蝕劑殘渣之除渣處理(圖6D)。繼而,將支持基板S浸漬於鍍Cu浴中,藉由對籽晶層SL1之電壓施加而於開口部P1內形成包含鍍Cu層之複數個通孔導體V13(圖6E)。繼而,將抗蝕劑膜R1及籽晶層SL1去除之後(圖7A),形成被覆通孔導體V13之絕緣層113(圖7B)。絕緣層113係於電極層L2上印刷、塗佈樹脂材料、或貼合樹脂膜之後,使其硬化。於硬化後,使用CMP(chemical mechanical polishing,化學機械研磨裝置)或研磨機等研磨裝置,將絕緣層113之表面研磨直至通孔導體V13之前端露出為止(圖7C)。圖7C表示作為一例,將支持基板S之上下反轉而置於能夠自轉之研磨頭H上,利用公轉之研磨墊P進行絕緣層113之研磨處理(CMP)之狀況。如以上般,於電極層L2上製作電極層L3(圖7D)。再者,關於絕緣層112之形成方法省略記載,典型而言,絕緣層112又以與絕緣層113相同之方法而製作,即,於印刷、塗佈、或貼合之後,使其硬化,藉由CMP(化學機械研磨裝置)或研磨機等進行研磨。以後,同樣地於電極層L3上製作電極層L4。首先,於電極層L3之絕緣層113(第2絕緣層)上,形成與複數個通孔導體V13(第1通孔導體)連接之複數個通孔導體(第2通孔導體)。即,於上述第2絕緣層之表面形成被覆上述第1通孔導體之表面之籽晶層,且於上述籽晶層上,形成在與上述第1通孔導體之表面對應之區域設置開口之抗蝕劑圖案,藉由將上述抗蝕劑圖案作為遮罩之電性鍍覆法而形成上述第2通孔導體。繼而,於上述第2絕緣層上,形成被覆上述第2通孔導體之第3絕緣層。其後,研磨上述第3絕緣層之表面直至上述第2通孔導體之前端露出為止。再者,於上述第2通孔導體之形成步驟中,亦又同時形成構成梳齒塊部24(241、242)之一部分之通孔導體V2(參照圖4、圖5D)。於該情形時,作為上述抗蝕劑圖案,除上述第2通孔導體之形成區域設置開口之抗蝕劑圖案之外,還形成通孔導體V2之形成區域設置開口之抗蝕劑圖案。圖8A~D表示電極層L5之製造步驟之一部分。此處,亦首先於電極層L4之表面依序形成電性鍍覆用之籽晶層SL3、及具有開口部P2、P3之抗蝕劑圖案(抗蝕劑膜R3)(圖8A)。其後,執行去除開口部P2、P3內之抗蝕劑殘渣之除渣處理(圖8B)。電極層L4具有絕緣層114、及通孔導體V14、V24。通孔導體V14相當於構成柱狀導體21(211、212)之一部分之通孔(V1),通孔導體V24相當於構成梳齒塊部24(241、242)之一部分之通孔(V2)(參照圖5C、D)。開口部P2隔著籽晶層SL3而與電極層L4內之通孔導體V14對向,開口部P3隔著籽晶層SL3而與電極層L4內之通孔導體V24對向。開口部P2形成為與各連結導體222對應之形狀。繼而,將支持基板S浸漬於鍍Cu浴中,藉由對籽晶層SL3之電壓施加而於開口部P2、P3內分別形成包含鍍Cu層之通孔導體V25與連結導體222(圖8C)。通孔導體V25相當於構成梳齒塊部24(241、242)之一部分之通孔(V2)。繼而,去除抗蝕劑膜R3及籽晶層SL3,形成被覆通孔導體V25與連結導體222之絕緣層115(圖8D)。其後儘管未圖示,亦藉由對絕緣層115之表面之研磨直至通孔導體V25之前端露出為止、進而反覆執行籽晶層之形成、抗蝕劑圖案之形成、電性鍍覆處理等步驟而製作圖4及圖5E所示之電極層L5。其後,在露出於絕緣層115之表面(底面102)之梳齒塊部24(241、242)形成有導體層301、302之後,分別形成第1及第2外部電極31、32。[本實施形態之構造]伴隨近年來之零件之小型化,存在線圈特性之確保變得困難之傾向。即,線圈零件之特性較大地依存於內置之線圈部之大小、形狀等,典型而言,線圈部之開口越大則可獲得越高之電感特性。然而,由零件之小型化而對絕緣體部之大小產生制約,其結果導致線圈部之有效面積減少、電感特性降低。因此,於本實施形態中,藉由使線圈部之開口之尺寸比率最佳化而要既謀求小型化,又謀求線圈零件之高特性化。圖9A~C係說明線圈零件之高頻特性之模式圖。圖9A所示之線圈零件200具有長方體形狀之絕緣體部210、及配置於其內部之線圈部220C。此處為了容易理解,將線圈部220C之環繞部Cn以塗有斜線(影線)之單純之矩形環狀區域表示(圖10中亦相同)。再者,符號230為外部電極。線圈零件之典型之小型化方法中,使絕緣體部210低背化,因此環繞部Cn之上邊側(以下,稱為A側)與下邊側(以下,稱為B側)相互接近。若環繞部Cn之A側與B側接近,則由A側與B側所形成之磁通(磁場)間之影響變大。即,如圖9B所示,由流經A側之電流IA所形成之磁通ΦA與由流經B側之電流IB所形成之ΦB為相反方向,故A側與B側越接近則磁通ΦA與磁通ΦB之相互干涉(相互抵消)越大。其結果,環繞部Cn之開口整體之磁通ΦT亦變小,從而無法獲得如設計般之電感。因此,本實施形態中,如圖9C所示,藉由增大A側與B側之間之距離而抑制於雙方所形成之磁通ΦA、ΦB之相互干涉,使環繞部Cn整體之磁通ΦT增大,從而使電感提高。又,可提高電感係與可同時縮短線路長度相關,其結果,電阻被較低地抑制,故可提高Q值。環繞部Cn之A側及B側之隔開距離可藉由絕緣體部210之高背化而實現。藉此,線圈零件之安裝面積不會變大,故既謀求線圈零件之小型化,又謀求線圈特性之提高。使用有上述典型之小型化方法之線圈零件200中,由於晶片零件之外形尺寸之制約,故必須使位於環繞部之開口(核心)之導體內周面之尺寸比率(hd/ld)變小(參照圖9A)。相對於此,本實施形態中,根據晶片零件之外形尺寸而重新認識,其特徵在於,不改變絕緣體部10之大小(零件體積)而增大了尺寸比率(hd/ld)。藉此,可有效率地提高電感,結果可獲得Q值較高之線圈零件。具體而言,如圖10所示,本實施形態之線圈零件100以如下方式構成,即,絕緣體部10之高度尺寸(Ha)相對於長度尺寸(La)之比率(Ha/La),成為沿Z軸方向之環繞部Cn之內周部間之高度尺寸(hd)相對於沿Y軸方向之環繞部Cn之內周部間之長度尺寸(ld)之比率(hd/ld)的1.5倍以下。藉此,可有效率地提高線圈零件100之Q值。此處,「沿Y軸方向之環繞部Cn之內周部間之長度尺寸(ld)」係指將構成該環繞部Cn之第1及第2柱狀導體211、212之對向面間之距離投影至YZ平面後之關於Y軸方向的長度。又,「沿Z軸方向之環繞部Cn之內周部間之高度尺寸(hd)」係指將構成該環繞部Cn之第1及第2連結導體221、222之對向面間之距離投影至YZ平面後之關於Z軸方向的長度。關於尺寸之測定,自Z軸方向(高度方向)進行剖面研磨、銑削直至穿過絕緣體之高度方向之中心之面為止,利用掃描式電子顯微鏡(SEM,scanning electron microscope)進行200倍左右之觀察,藉此測定第1柱狀導體211與第2柱狀導體212之間隔,將其作為環繞部Cn之內周部間之長度尺寸(ld)。又,自X軸方向(寬度方向)進行剖面研磨、銑削直至穿過絕緣體部之寬度方向之中心之面為止,利用SEM測定第1連結導體221與第2連結導體222之間隔,將其作為環繞部Cn之內周部間之高度尺寸(hd)。關於其他部分之尺寸測定,亦分別使用上述之觀察試樣進行。環繞部Cn之開口尺寸比率(hd/ld)並未特別限定,於本實施形態中,為0.6以上且1.2以下。藉此可更穩定地確保較高之電感值及Q值。又,自線圈軸方向(X軸方向)觀察時由環繞部Cn之內周部劃分之面積(Sd)相對於絕緣體部12之面積(Sa)之比率(Sd/Sa)亦並未特別限定,於本實施形態中,為0.22以上且0.45以下(22%以上且45%以下)。藉此,可有效率地提高線圈零件100之電感值。進而,根據本實施形態,於圖1中將第1及第2梳齒塊部241、242之各者之梳齒部之前端朝向上方而配置,故可彌補絕緣體部10之伴隨高背化之剛性不足。藉此,可提高線圈零件100之可靠性。<實驗例>以下,參照圖10及圖11,對由本發明者等人實施之實驗例進行說明。將環繞部Cn之開口稱為核心部。(實驗例1)製作出各部之尺寸如下之具備玻璃製之絕緣體部及線圈部之線圈零件樣本。∙絕緣體部:長度(La)370 μm,寬度(Wa)200 μm,高度(Ha)215 μm∙線圈部:Y軸方向之導體尺寸(lc)35 μm,X軸方向之導體尺寸(wc)10 μm,Z軸方向之導體尺寸(hc)35 μm,X軸方向上相鄰之環繞部間之距離(導體間距離g)20 μm,Y軸方向之核心部尺寸(ld)200 μm,整個環繞部Cn之X軸方向之核心部尺寸(wd)130 μm,Z軸方向之核心部尺寸(hd)85 μm∙側邊緣:Y軸方向之尺寸(lb)50 μm,X軸方向之尺寸(wb)30 μm,Z軸方向之尺寸(hb)30 μm對所製作之樣本,使用RF(radio frequency,射頻)阻抗分析儀(Agilent公司製造E4991A)分別測定電感(L值)(測定頻率500 MHz)及Q值(測定頻率1.8 GHz),L值為2.6 nH,Q值為27。(實驗例2)將絕緣體部設為長度(La)350 μm,寬度(Wa)200 μm,高度(Ha)230 μm,將核心部尺寸設為Y軸方向(ld)180 μm,X軸方向(wd)130 μm,Z軸方向(hd)100 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.7 nH,Q值為28。(實驗例3)將絕緣體部設為長度(La)320 μm,寬度(Wa)200 μm,高度(Ha)250 μm,將核心部尺寸設為Y軸方向(ld)150 μm,X軸方向(wd)130 μm,Z軸方向(hd)120 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.8 nH,Q值為29。(實驗例4)將絕緣體部設為長度(La)305 μm,寬度(Wa)200 μm,高度(Ha)265 μm,將核心部尺寸設為Y軸方向(ld)135 μm,X軸方向(wd)130 μm,Z軸方向(hd)135 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.9 nH,Q值為30。(實驗例5)將絕緣體部設為長度(La)275 μm,寬度(Wa)200 μm,高度(Ha)290 μm,將核心部尺寸設為Y軸方向(ld)105 μm,X軸方向(wd)130 μm,Z軸方向(hd)160 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.6 nH,Q值為29。(實驗例6)將絕緣體部設為長度(La)265 μm,寬度(Wa)200 μm,高度(Ha)300 μm,將核心部尺寸設為Y軸方向(ld)95 μm,X軸方向(wd)130 μm,Z軸方向(hd)170 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.3 nH,Q值為28。(實驗例7)製作出各部之尺寸如下之具備樹脂製之絕緣體部及線圈部之線圈零件樣本。∙絕緣體部:長度(La)410 μm,寬度(Wa)200 μm,高度(Ha)195 μm∙線圈部:Y軸方向之導體尺寸(lc)35 μm,X軸方向之導體尺寸(wc)24 μm,Z軸方向之導體尺寸(hc)35 μm,導體間距離(g)10 μm,Y軸方向之核心部尺寸(ld)250 μm,X軸方向之核心部尺寸(wd)160 μm,Z軸方向之核心部尺寸(hd)85 μm∙側邊緣:Y軸方向之尺寸(lb)45 μm,X軸方向之尺寸(wb)20 μm,Z軸方向之尺寸(hb)20 μm對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.0 nH,Q值為31。(實驗例8)將絕緣體部設為長度(La)380 μm,寬度(Wa)200 μm,高度(Ha)210 μm,將核心部尺寸設為Y軸方向(ld)220 μm,X軸方向(wd)160 μm,Z軸方向(hd)100 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.2 nH,Q值為32。(實驗例9)將絕緣體部設為長度(La)350 μm,寬度(Wa)200 μm,高度(Ha)230 μm,將核心部尺寸設為Y軸方向(ld)190 μm,X軸方向(wd)160 μm,Z軸方向(hd)120 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.3 nH,Q值為33。(實驗例10)將絕緣體部設為長度(La)320 μm,寬度(Wa)200 μm,高度(Ha)250 μm,將核心部尺寸設為Y軸方向(ld)160 μm,X軸方向(wd)160 μm,Z軸方向(hd)140 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.4 nH,Q值為34。(實驗例11)將絕緣體部設為長度(La)310 μm,寬度(Wa)200 μm,高度(Ha)260 μm,將核心部尺寸設為Y軸方向(ld)150 μm,X軸方向(wd)160 μm,Z軸方向(hd)150 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.5 nH,Q值為34。(實驗例12)將絕緣體部設為長度(La)275 μm,寬度(Wa)200 μm,高度(Ha)290 μm,將核心部尺寸設為Y軸方向(ld)115 μm,X軸方向(wd)160 μm,Z軸方向(hd)180 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.3 nH,Q值為32。(實驗例13)將絕緣體部設為長度(La)255 μm,寬度(Wa)200 μm,高度(Ha)315 μm,將核心部尺寸設為Y軸方向(ld)95 μm,X軸方向(wd)160 μm,Z軸方向(hd)205 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.1 nH,Q值為31。(實驗例14)將絕緣體部設為長度(La)310 μm,寬度(Wa)200 μm,高度(Ha)260 μm,將Y軸方向之導體尺寸(lc)設為30 μm,X軸方向之導體尺寸(wc)設為24 μm,Z軸方向之導體尺寸(hc)設為30 μm,將核心部尺寸設為Y軸方向(ld)160 μm,X軸方向(wd)160 μm,Z軸方向(hd)160 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.6 nH,Q值為36。(實驗例15)將絕緣體部設為長度(La)310 μm,寬度(Wa)200 μm,高度(Ha)260 μm,將Y軸方向之導體尺寸(lc)設為25 μm,X軸方向之導體尺寸(wc)設為24 μm,Z軸方向之導體尺寸(hc)設為25 μm,將核心部尺寸設為Y軸方向(ld)170 μm,X軸方向(wd)160 μm,Z軸方向(hd)170 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為3.8 nH,Q值為37。(實驗例16)將絕緣體部設為長度(La)310 μm,寬度(Wa)200 μm,高度(Ha)260 μm,將Y軸方向之導體尺寸(lc)設為20 μm,將X軸方向之導體尺寸(wc)設為24 μm,將Z軸方向之導體尺寸(hc)設為20 μm,將核心部尺寸設為Y軸方向(ld)180 μm,X軸方向(wd)160 μm,Z軸方向(hd)180 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為4.2 nH,Q值為37。(實驗例17)將絕緣體部設為長度(La)310 μm,寬度(Wa)200 μm,高度(Ha)260 μm,將Y軸方向之導體尺寸(lc)設為15 μm,將X軸方向之導體尺寸(wc)設為24 μm,將Z軸方向之導體尺寸(hc)設為15 μm,將核心部尺寸設為Y軸方向(ld)190 μm,X軸方向(wd)160 μm,Z軸方向(hd)190 μm,除此之外,在與實驗例7相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為4.8 nH,Q值為36。(比較例1)將絕緣體部設為長度(La)400 μm,寬度(Wa)200 μm,高度(Ha)200 μm,將核心部尺寸設為Y軸方向(ld)230 μm,X軸方向(wd)130 μm,Z軸方向(hd)70 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.2 nH,Q值為22。(比較例2)將絕緣體部設為長度(La)407 μm,寬度(Wa)200 μm,高度(Ha)202 μm,將核心部尺寸設為Y軸方向(ld)237 μm,X軸方向(wd)130 μm,Z軸方向(hd)72 μm,除此之外,在與實驗例1相同之條件下製作樣本。對所製作之樣本,在與實驗例1相同之條件下測定電感(L值)及Q值,L值為2.3 nH,Q值為23。將實驗例1~17及比較例1、2之上述各部之條件、尺寸比、自線圈軸方向(X軸方向)觀察之絕緣體部及核心部之面積及其面積比、以及線圈特性彙總示於表1~3。   [表1]

Figure 106110097-A0304-0001
[表2]
Figure 106110097-A0304-0002
[表3]
Figure 106110097-A0304-0003
如表2及表3所示,根據絕緣體部之尺寸比率(Ha/La)係核心部之尺寸比率(hd/ld)之1.5倍以下的實驗例1~17,確認可獲得較絕緣體部之尺寸比率(Ha/La)超出核心部之尺寸比率(hd/ld)之1.5倍之比較例1、2高的Q值。又,根據核心部之尺寸比率(hd/ld)為0.8以上且1.5以下之實驗例3~5,確認可獲得較實驗例1、2、6高之(29以上之)Q值。同樣地,根據核心部之尺寸比率(hd/ld)為0.6以上且1.0以下之實驗例9~11、14~17,確認可獲得較實驗例7、8、12、13高(超過32)之Q值。又,根據核心部之尺寸比率(hd/ld)為0.6以上且1.0以下之實驗例2~4,確認可獲得較實驗例1、5、6高(2.7 nH以上)之L值。進而,根據核心部之面積(Sd)相對於絕緣體部之面積(Sa)之比率(Sd/Sa)為22%以上且45%以下的實驗例2~4、7~17,確認可獲得2.7 nH以上之較高之電感值。以下個別地來看,於實驗例1中,儘管為與比較例2大致相同之核心面積,但核心部之尺寸比(wd/ld)較比較例2大,故獲得較比較例2高之Q值。於實驗例4中,核心部之尺寸比(wd/ld)成為大致1,故於實驗例1~6中獲得最高之Q值。於實驗例7~17中,與實驗例1~6相比較,絕緣體部之絕緣性高,可將導體尺寸增大至最大限度,故可提高電感值。伴隨此,亦可使Q值較高,為31以上。以上,對本發明之實施形態進行了說明,但當然本發明並不僅限定於上述實施形態,而是可施加各種變更。例如,於以上之實施形態中,對線圈零件之自頂面側向底面側依序積層絕緣層及通孔導體之方法進行了說明,但並不限於此,亦可自底面側向頂面側依序積層絕緣層及通孔導體。又,本發明亦能夠應用於將線圈部之各環繞部於線圈軸方向依序積層之線圈零件之製造方法。又,於上述實施形態中,自Z軸方向觀察之環繞部為四邊形,但即便為多邊形、於一部分形成有圓角等,只要環繞部導體存在對向之位置關係,則可取得相同之效果。又,於上述實施形態中將線圈零件之線圈軸設為X軸方向(寬度方向),但線圈軸方向即便為Z軸方向(高度方向)亦可取得相同之效果。進而,絕緣體部中,所使用之材料無論為玻璃抑或樹脂,例如即便於一部分包含鐵氧體粉等,只要磁導率為2以下,則可取得相同之效果。又,絕緣體只要介電常數為5以下,則尤其可使高頻特性良好,只要介電常數為4以下,則可進一步減小與端子電極之間產生之雜散電容,可使高頻下之Q值提高。<第2實施形態>於上述第1實施形態中,對配置有梳齒塊部之電子零件進行了說明,但亦可設為如上述圖1~圖3所示未配置梳齒塊部24之電子零件,以下作為變化例進行說明。於下述各構成例中,亦構成為使絕緣體部之高度尺寸(Ha)相對於長度尺寸(La)之比率(Ha/La),成為沿Z軸方向之環繞部Cn之內周部間之高度尺寸(hd)相對於沿Y軸方向之環繞部Cn之內周部間之長度尺寸(ld)之比率(hd/ld)的1.5倍以下。又,環繞部Cn之開口尺寸比率(hd/ld)並未特別限定,但於本實施形態中,為0.6以上且1.0以下。藉此可更穩定地確保較高之電感值及Q值。又,自線圈軸方向(X軸方向)觀察時由環繞部Cn之內周部劃分之面積(Sd)相對於絕緣體部之面積(Sa)之比率(Sd/Sa)亦未特別限定,但於本實施形態中,為0.22以上且0.65以下(22%以上且65%以下)。藉此,可有效率地提高線圈零件之電感值。(第1構成例)第1構成例之電子零件中未配置梳齒塊部。藉此,在相同體積之絕緣體部內配置內部導體部之情形時,與配置梳齒塊部之情形相比較,線圈部之設計範圍變大且能夠擴大線圈部之開口面積,從而可使L值、Q值提高。又,於本構成例中,未配置梳齒塊部,故能夠成為僅於長方體形狀之絕緣體部之1個面上形成外部電極之構造,可形成1面安裝型電子零件。上述實施形態之線圈零件係於長方體形狀之絕緣體部之3個面102、103、104上形成有外部電極之3面安裝型電子零件,但並不限定於此,亦可如本構成例般設為僅於絕緣體部之1個面上形成有外部電極之1面安裝型電子零件。進而,於上述實施形態中線圈部與外部電極之連接係經由梳齒塊部及引出線進行,但於本構成例中,線圈部與外部電極之連接係經由連接用通孔導體層進行。以下,使用圖12~圖14對第1構成例之電子零件進行說明。圖12A係本實施形態之第1構成例之線圈零件之概略透視立體圖,圖12B係其外觀立體圖,圖13A係其概略透視側視圖,圖13B係其外觀側視圖,圖14係其概略透視俯視圖。再者,於各圖中X軸、Y軸及Z軸方向表示相互正交之3軸方向。本構成例之電子零件1100係作為表面安裝用之線圈零件而構成。電子零件1100具備絕緣體部1010、內部導體部1020、及外部電極1030。絕緣體部1010具有頂面1101、底面1102、第1端面1103、第2端面1104、第1側面1105及第2側面1106,形成為於X軸方向上具有寬度方向、於Y軸方向上具有長度方向、且於Z軸方向上具有高度方向之長方體形狀。底面1102成為安裝面。絕緣體部1010具有本體部1011與頂面部12。本體部1011內置有內部導體部1020,且構成絕緣體部1010之主要部分。頂面部12構成絕緣體部1010之頂面1101。用於絕緣體部1010之材料與上述實施形態相同。內部導體部1020設置於絕緣體部1010之內部。內部導體部1020具有複數個柱狀導體1021、複數個連結導體1022、及連接用通孔導體層V1023,藉由該等複數個柱狀導體1021及連結導體1022而構成線圈部1020L。又,連接用通孔導體層V1023連接於線圈部1020L之兩端部之各者。複數個柱狀導體1021形成為具有與Z軸方向平行之軸心之大致圓柱形狀。複數個柱狀導體1021係由在大致Y軸方向上相互對向之2個導體群構成。構成其中之一個導體群之第1柱狀導體10211於X軸方向上隔開特定之間隔而排列,構成另一個導體群之第2柱狀導體10212亦同樣地於X軸方向上隔開特定之間隔而排列。再者,所謂大致圓柱形狀,除軸直角方向(與軸心垂直之方向)之剖面形狀為圓形之柱體之外,亦包含上述剖面形狀為橢圓形或長圓形之柱體,作為橢圓形或長圓形例如係指長軸/短軸之比為3以下者。第1及第2柱狀導體10211、10212係以分別相同直徑及相同高度而構成。於圖示之例中第1及第2柱狀導體10211、10212分別各設置5根。如下所述,第1及第2柱狀導體10211、10212係藉由將複數個通孔導體於Z軸方向積層而構成。再者,所謂大致相同直徑係指用以抑制電阻之增加者,且於相同方向觀察之尺寸之不均例如落在10%以內,所謂大致相同高度係指用以確保各層之堆積精度者,且高度之不均例如落在±10 μm之範圍內。複數個連結導體1022係由與XY平面平行地形成且於Z軸方向上相互對向之2個導體群而構成。構成其中之一個導體群之第1連結導體10221沿Y軸方向延伸,且於X軸方向上隔開間隔而排列,將第1及第2柱狀導體10211、10212之間各自連接。構成另一個導體群之第2連結導體10222相對於Y軸方向以特定角度傾斜而延伸,且於X軸方向上隔開間隔而排列,將第1及第2柱狀導體10211、10212之間各自連接。於圖示之例中,第1連結導體10221係由5個連結導體構成,第2連結導體10222係由4個連結導體構成。於圖12中,第1連結導體10221與特定之一組柱狀導體10211、10212之上端連接,第2連結導體10222與特定之一組柱狀導體10211、10212之下端連接。更詳細而言,第1及第2柱狀導體10211、10212與第1及第2連結導體10221、10222構成線圈部1020L之環繞部Cn(C1~C5),該等環繞部Cn以繞X軸方向描繪矩形之螺旋之方式而相互連接。藉此,於絕緣體部1010之內部,形成於X軸方向上具有軸心(線圈軸)之開口形狀為矩形之線圈部1020L。本實施形態中環繞部Cn係由5個環繞部C1~C5構成。各環繞部C1~C5之開口形狀形成為分別大致相同之形狀。連接用通孔導體層V1023具有第1連接用通孔導體層V10231、及第2連接用通孔導體層V10232。第1連接用通孔導體層V10231與構成線圈部1020L之一端之第1柱狀導體10211之下端連結而連接,第2連接用通孔導體層V10232與構成線圈部1020L之另一端之第2柱狀導體10212之下端連結而連接。第1及第2連接用通孔導體層V10231、V10232中,與Z軸方向垂直之剖面形狀為大致圓形,且具有與柱狀導體1021之與Z軸方向垂直之剖面大致相同之大小及形狀。外部電極1030構成表面安裝用之外部端子,其具有於Y軸方向上相互對向之第1及第2外部電極1031、1032。第1及第2外部電極1031、1032僅形成於絕緣體部1010之作為1面之底面1102。外部電極1030形成於絕緣體部1010之外側。柱狀導體1021、連結導體1022、及連接用通孔導體層V1023例如係由Cu(銅)、Al(鋁)、Ni(鎳)等金屬材料構成,於本實施形態中任一者均由銅或其合金之鍍覆層構成。第1及第2外部電極1031、1032例如由Ni/Sn鍍覆而構成。圖15係將電子零件1100之上下反轉而表示之概略透視側視圖。如圖15所示,電子零件1100係由膜層L1001、及複數個電極層L1002~L1006之積層體而構成。於本實施形態中,藉由將膜層L1001及電極層L1002~L1006自頂面1101向底面1102於Z軸方向上依序積層而製作。層之數量並未特別限定,此處設為6層進行說明。膜層L1001及電極層L1002~L1006包含構成該各層之絕緣體部1010、內部導體部1020及外部電極1030之要素。圖16A~F分別係圖15中之膜層L1001及電極層L1002~L1006之概略俯視圖。膜層L1001係由絕緣體部1010之形成頂面1101之頂面部12而構成(圖16A)。電極層L1002包含構成絕緣體部1010(本體部1011)之一部分之絕緣層10110(10112)、及第1連結導體10221(圖16B)。電極層L1003包含絕緣層10110(10113)、及構成柱狀導體10211、10212之一部分之通孔導體V1001(圖16C)。電極層L1004除絕緣層10110(10114)、通孔導體V1001之外,還包含第2連結導體10222(圖16D)。電極層L1005包含絕緣層10110(10115)、及連接用通孔導體層V1023(第1連接用通孔導體層V10231、第2連接用通孔導體層V10232)(圖16E)。而且,電極層L1006包含外部電極1030(第1外部電極1031、第2外部電極1032)(圖16F)。電極層L1002~L1006隔著接合面S1~S4(圖15)而於高度方向上積層。因此各絕緣層10110、通孔導體V1001、連接用通孔導體層V1023、外部電極1030於相同高度方向上具有邊界部。而且,電子零件1100藉由將各電極層L1002~L1006自電極層L1002依序製作並積層之與上述實施形態相同之增層法而製造。如以上般,第1構成例之電子零件1100中未配置梳齒塊部,故可擴大Y軸方向之核心部尺寸(ld)。藉此可擴大線圈部1020L之開口面積,且能夠提高L值及Q值。又,於本構成例中,成為表面安裝用之外部端子之外部電極1030僅形成於電子零件1100之1面,故在將電子零件1100藉由焊接而安裝時,安裝面僅為1面,故不形成焊接填角便能夠進行高密度安裝。又,將線圈部1020L與外部電極1030藉由連接用通孔導體層V1023而連接,故與配置有梳齒塊部之情形相比較,可縮短自外部電極至線圈部1020為止之電流路徑。藉此,可獲得雜訊之產生較少且特性劣化較少之電子零件1100。(第2構成例)於上述第1構成例中,連接用通孔導體層V1023之與Z軸方向垂直之剖面形狀具有大致圓形,但並不限定於此,例如亦可具有長圓形,以下,作為第2構成例進行說明。主要對與第1構成例不同之構成進行說明,對於相同之構成,有標註相同之符號且省略說明之情況。於本構成例中,亦與第1構成例同樣地,能夠增大線圈部之開口面積,藉此能夠提高L值、Q值。以下,使用圖17~圖19對第2構成例之線圈零件進行說明。圖17係線圈零件之概略透視立體圖。圖18係其概略透視側視圖。圖19係其概略透視俯視圖。本構成例之電子零件2100係作為表面安裝用之線圈零件而構成。電子零件2100具備絕緣體部2010、內部導體部2020、及外部電極1030。絕緣體部2010具有本體部2011與頂面部12。本體部2011內置有內部導體部2020,且構成絕緣體部2010之主要部分。絕緣體部2010具有頂面2101、底面2102、第1端面2103、第2端面2104、第1側面2105及第2側面2106,且形成為於X軸方向上具有寬度方向、於Y軸方向上具有長度方向、且於Z軸方向上具有高度方向之長方體形狀。內部導體部2020設置於絕緣體部2010之內部。內部導體部2020具有複數個柱狀導體1021、複數個連結導體1022、及連接用通孔導體層V2023,藉由該等複數個柱狀導體1021及連結導體1022而構成線圈部1020L。又,連接用通孔導體層V2023連接於線圈部1020L之兩端部之各者。連接用通孔導體層V2023具有第1連接用通孔導體層V20231、及第2連接用通孔導體層V20232。第1連接用通孔導體層V20231與構成線圈部1020L之一端之第1柱狀導體10211之下端連接,第2連接用通孔導體層V20232與構成線圈部1020L之另一端之第2柱狀導體10212之下端連接。第1及第2連接用通孔導體層V20231、V20232之與Z軸方向垂直之剖面形狀為長圓形,且具有較柱狀導體1021之與Z軸方向垂直之剖面大的剖面形狀。換言之,將柱狀導體1021與連接用通孔導體層V2023投影至XY平面時,柱狀導體1021之大致圓形之投影圖全部包含於連接用通孔導體層V2023之大致長圓形之投影圖中。外部電極1030構成表面安裝用之外部端子,且具有於Y軸方向上相互對向之第1及第2外部電極1031、1032。第1及第2外部電極1031、1032形成於絕緣體部2010之僅作為1面之底面2102。如以上般,於本構成例中,將連接用通孔導體層V2023之剖面形狀設為長圓,且形成較構成線圈部1020L之一部分之柱狀導體1021之剖面大的剖面形狀,藉此可增大線圈部1020L與外部電極1030之接觸面積。(第3構成例)於上述各構成例中,亦可以與連接用通孔導體層V1023、V2023相同層而設置未將線圈部1020L與外部電極1030電性連接之虛設通孔導體層,以下,作為第3構成例進行說明。虛設通孔導體層係與外部電極1030接觸而於絕緣體內形成複數個。藉由設置虛設通孔導體層而可使外部電極1030與絕緣體部1010之密接強度提高。虛設通孔導體層之設置能夠應用於上述構成例及上述實施形態。圖20係第3構成例之線圈零件之概略透視立體圖。圖21係其概略透視側視圖。圖22係其概略透視俯視圖。於第3構成例中,以於上述第1構成例中設置有虛設通孔導體層之情形為例進行說明,對於與第1構成例相同之構成標註相同之符號,省略說明。本構成例之電子零件3100係作為表面安裝用之線圈零件而構成。電子零件3100具備絕緣體部3010、內部導體部1020、及外部電極1030。絕緣體部3010具有本體部3011及頂面部12。本體部3011內置有內部導體部1020及虛設通孔導體層3040,且構成絕緣體部3010之主要部分。絕緣體部3010具有頂面3101、底面3102、第1端面3103、第2端面3104、第1側面3105及第2側面3106,且形成為於X軸方向上具有寬度方向、於Y軸方向上具有長度方向、且於Z軸方向上具有高度方向之長方體形狀。虛設通孔導體層3040係由設置於與長方體形狀之絕緣體部3010之底面3102對向之外部電極1030之內表面部的複數個突起部而構成,圖21所示沒入絕緣體部3010之底面3102之內部。虛設通孔導體層3040之前端部隔著構成絕緣體部3010之絕緣材料而與內部導體部1020對向,因此並未與線圈部1020L接觸。虛設通孔導體層3040係以與連接用通孔導體層V1023相同層而形成。複數個虛設通孔導體層3040係由在Y軸方向上相互對向之2個導體層群而構成。構成其中之一個導體層群之第1虛設通孔導體層3041與XY平面上之形狀大致矩形之第1外部電極1031之四角對應而分別各配置1個。構成另一個導體層群之第2虛設通孔導體層3042與XY平面上之形狀大致矩形之第2外部電極1032之四角對應而分別各配置1個。虛設通孔導體層3040藉由構成絕緣體部3011之絕緣層而與內部導體部1020電性絕緣。於本變化例中,藉由設置虛設通孔導體層3040而使外部電極1030與絕緣體部3011之密接強度提高。即,於外部電極1030之製作方法中,可採取以下方法,即,例如與藉由電性鍍覆法而製作構成上述實施形態之內部導體部之導體圖案之方法同樣地,設置電性鍍覆用之籽晶層,且設置具有開口部之抗蝕劑圖案之後,藉由電性鍍覆法而形成外部電極。於此種方法中藉由製作外部電極1030而產生虛設通孔導體層3040與外部電極1030之較強之接著,從而絕緣體部3011與外部電極1030之密接強度提高。<電子零件特性>本發明之電子零件並不限定於上述各實施形態,例如亦可採取圖23及圖24所示之構成。圖23、圖24之各圖係上述實施形態之電子零件之概略透視圖。圖23之各圖表示如上述第1實施形態般配置有梳齒塊部24之電子零件之圖,圖24之各圖表示如上述第2實施形態般未配置梳齒塊部之電子零件之圖。對於與上述各實施形態相同之構成,標註相同之符號。圖23及圖24所示之各電子零件之外形尺寸均相同,對於任一電子零件,均構成為使絕緣體部之高度尺寸(Ha)相對於長度尺寸(La)之比率(Ha/La),成為沿Z軸方向之環繞部Cn之內周部間之高度尺寸(hd)相對於沿Y軸方向之環繞部Cn之內周部間之長度尺寸(ld)之比率(hd/ld)的1.5倍以下。圖23A係上述第1實施形態之電子零件100之概略透視側視圖。圖23B係如下形態之電子零件4100之概略透視側視圖,即,與電子零件100相比較,該電子零件4100未設置引出部23,且如上述第2實施形態般經由連接用通孔導體層V1023而將外部電極30與線圈部1020L加以連接。圖23C係以下情形之電子零件5100之概略透視側視圖,即,與圖23B之電子零件3100相比較,該電子零件5100之梳齒塊部24之Y軸方向之長度較短,且線圈部1020L與梳齒塊部24之距離較長。於圖23之各圖中,Y軸方向(圖中左右方向)之線圈部20L與絕緣體部端面之間之側邊緣之尺寸(1b)均為45 μm。圖24之各圖係與上述第2實施形態(第1構成例)之電子零件1100對應者,僅Y軸方向之側邊緣之尺寸(1b)不同,基本的構成相同。圖24A所示之電子零件1100A之側邊緣1b為45 μm,圖24B所示之電子零件1100B之側邊緣1b為20 μm,圖24C所示之電子零件1100C之側邊緣1b為10 μm。圖25表示圖23及圖24所示之各電子零件之電感(L值)特性。圖26表示圖23及圖24所示之各電子零件之Q值特性。於圖25及圖26中,橫軸之23A相當於圖23A所示之電子零件,以下同樣地,23B、23C、24A、24B及24C分別相當於圖23B、圖23C、圖24A、圖24B及圖24C所示之電子零件,對各電子零件之電感及Q值進行繪圖。如圖25及圖26所示,顯示任一電子零件中L值均為3.0 nH以上,Q值均為30以上,可獲得較高之電感值及Q值。進而,藉由擴大線圈部之開口(核心)而可使電感特性及Q值特性進一步提高。圖27係根據電子零件之構成之不同而比較內部導體部之可形成區域之圖。圖27之各圖中,以電子零件之外形為200 μm(寬度)×400 μm(橫長)×200 μm(高度)者為例記載各尺寸。圖27B係上述第2實施形態(第1構成例)所示之1面安裝型之電子零件1100之概略外觀側視圖。圖27C表示上述第1實施形態所示之3面安裝型之電子零件100之概略透視側視圖。圖27D表示先前之5面安裝型之電子零件7100之概略外觀側視圖,符號7030表示外部電極。對於任一電子零件,外部電極之厚度均設為10 μm。圖27A表示假定絕緣體部之外形與電子零件之外形相等之情形之例,將此時之絕緣體部6010之體積設為100%,計算圖27B~圖27D之各圖所示之電子零件中之絕緣體部所占之比例。於圖27B之1面安裝型之電子零件1100中,絕緣體部1010所占之比例成為95%,圖27C之3面安裝型之電子零件100中,絕緣體部10所占之比例成為84%,圖27D之5面安裝型之電子零件7100中,絕緣體部所占之比例為76.95%。電子零件中之絕緣體部所占之比例越高,則配置於絕緣體部之內部之內部導體部之可形成區域越大。因此,1面安裝型之電子零件1100及3面安裝型之電子零件100之任一者與先前之5面安裝型之電子零件7100相比較,內部導體部之可形成區域均變大,可擴大線圈部之開口(核心)。藉此,能夠提高L值及Q值。Hereinafter, an embodiment of the present invention will be described with reference to the drawings. <First Embodiment> [Basic Configuration] FIG. 1 is a schematic perspective perspective view of an electronic component according to an embodiment of the present invention, FIG. 2 is a schematic perspective side view thereof, and FIG. 3 is a schematic perspective top view thereof. In addition, in each figure, the X-axis, Y-axis, and Z-axis directions represent three-axis directions orthogonal to each other. The electronic component 100 of this embodiment is configured as a coil component for surface mounting. The electronic component 100 includes an insulator portion 10, an internal conductor portion 20, and an external electrode 30. The insulator portion 10 has a top surface 101, a bottom surface 102, a first end surface 103, a second end surface 104, a first side surface 105, and a second side surface 106, and is formed to have a width direction in the X-axis direction and a length in the Y-axis direction Direction, and has a rectangular parallelepiped shape in the height direction in the Z-axis direction. The insulator portion 10 is designed to have a width dimension of 0.05 to 0.2 mm, a length dimension of 0.1 to 0.4 mm, and a height dimension of 0.05 to 0.4 mm, for example. In this embodiment, the width dimension is about 0.2 mm, the length dimension is about 0.35 mm, and the height dimension is about 0.2 mm. The insulator portion 10 has a body portion 11 and a top surface portion 12. The body portion 11 contains an internal conductor portion 20 and constitutes a main part of the insulator portion 10. The top surface portion 12 constitutes the top surface 101 of the insulator portion 10. The top surface portion 12 may also be configured as a printed layer that displays the model number of the electronic component 100 and the like, for example. The body portion 11 and the top surface portion 12 are made of an insulating material mainly composed of resin. As the insulating material constituting the body portion 11, a resin hardened by heat, light, chemical reaction, or the like can be used, and examples thereof include polyimide, epoxy resin, and liquid crystal polymer. On the other hand, the top surface portion 12 may be composed of a resin film or the like other than the above materials. Alternatively, the insulator portion 10 may be made of ceramic materials such as glass. The insulator portion 10 can also be used for a composite material containing a filler in resin. As the filler, typically, ceramic particles such as silica, alumina, and zirconia are mentioned. The shape of the ceramic particles is not particularly limited, and is typically spherical, but it is not limited thereto, and may be needle-like, scale-like, or the like. The internal conductor portion 20 is provided inside the insulator portion 10. The inner conductor portion 20 has a plurality of columnar conductors 21 and a plurality of connecting conductors 22, and the plurality of columnar conductors 21 and the connecting conductors 22 constitute a coil portion 20L. The plurality of columnar conductors 21 are formed in a substantially cylindrical shape having an axis center parallel to the Z-axis direction. The plural columnar conductors 21 are composed of two conductor groups facing each other in the substantially Y-axis direction. The first columnar conductors 211 constituting one of the conductor groups are arranged at specific intervals in the X-axis direction, and the second columnar conductors 212 constituting the other conductor group are similarly separated at the X-axis directions. Arranged at intervals. In addition, the so-called substantially cylindrical shape includes not only cylinders with a circular cross-section in the direction perpendicular to the axis (direction perpendicular to the axis), but also cylinders with an elliptical or oblong cross-sectional shape as ellipses. The shape or the oblong shape refers to, for example, a ratio of long axis/short axis of 3 or less. The first and second columnar conductors 211 and 212 are formed with the same diameter and the same height, respectively. In the example shown in the figure, five first and second columnar conductors 211 and 212 are provided respectively. As described below, the first and second columnar conductors 211 and 212 are configured by laminating a plurality of through-hole conductors in the Z-axis direction. Furthermore, the so-called approximately the same diameter refers to those used to suppress the increase in resistance, and the size variation observed in the same direction falls within 10%, for example, and the so-called approximately the same height refers to those used to ensure the stacking accuracy of each layer, and The unevenness in height falls within a range of ±1 μm, for example. The plurality of connecting conductors 22 is composed of two conductor groups formed parallel to the XY plane and facing each other in the Z-axis direction. The first connecting conductors 221 constituting one of the conductor groups extend in the Y-axis direction and are arranged at intervals in the X-axis direction to connect the first and second columnar conductors 211 and 212 respectively. The second connecting conductor 222 constituting another conductor group extends obliquely at a specific angle with respect to the Y-axis direction, and is arranged at intervals in the X-axis direction, each of the first and second columnar conductors 211 and 212 connection. In the example shown in the figure, the first connection conductor 221 is composed of five connection conductors, and the second connection conductor 222 is composed of four connection conductors. In FIG. 1, the first connecting conductor 221 is connected to the upper end of a specific set of columnar conductors 211 and 212, and the second connecting conductor 222 is connected to the lower end of a specific set of columnar conductors 211 and 212. In more detail, the first and second columnar conductors 211, 212 and the first and second connecting conductors 221, 222 constitute a surrounding portion Cn (C1 to C5) of the coil portion 20L, and these surrounding portions Cn wrap around the X axis The directions are connected to each other in such a way as to draw a rectangular spiral. As a result, inside the insulator portion 10, the coil portion 20L having a rectangular opening shape having an axis (coil axis) in the X-axis direction is formed. In this embodiment, the surrounding portion Cn is composed of five surrounding portions C1 to C5. The opening shapes of the surrounding portions C1 to C5 are formed to be substantially the same shape. The internal conductor portion 20 further has a lead portion 23 and a comb block portion 24, and the coil portion 20L is connected to the external electrode 30 (31, 32) via these. The lead-out portion 23 has a first lead-out portion 231 and a second lead-out portion 232. The first lead portion 231 is connected to the lower end of the first columnar conductor 211 constituting one end of the coil portion 20L, and the second lead portion 232 is connected to the lower end of the second columnar conductor 212 constituting the other end of the coil portion 20L. The first and second lead portions 231 and 232 are arranged on the same XY plane as the second connecting conductor 222 and are formed parallel to the Y-axis direction. The comb-tooth block portion 24 has first and second comb-tooth block portions 241 and 242 arranged to face each other in the Y-axis direction. In the first and second comb tooth block portions 241 and 242, the front end of each comb tooth portion is disposed upward in FIG. 1. On both end surfaces 103 and 104 and the bottom surface 102 of the insulator portion 10, a part of the comb tooth block portions 241 and 242 is exposed. The first and second lead-out portions 231 and 232 are respectively connected between the specific comb-teeth portions of the first and second comb-teeth block portions 241 and 242 (see FIG. 3 ). At the bottom of each of the first and second comb-tooth block portions 241 and 242, conductor layers 301 and 302 constituting a base layer of the external electrode 30 are provided, respectively (see FIG. 2). The external electrode 30 constitutes an external terminal for surface mounting, and has first and second external electrodes 31 and 32 facing each other in the Y-axis direction. The first and second external electrodes 31 and 32 are formed in a specific area on the outer surface of the insulator portion 10. More specifically, as shown in FIG. 2, the first and second external electrodes 31 and 32 have a first portion 30A covering both ends of the bottom surface 102 of the insulator layer 10 in the Y-axis direction, and both end surfaces of the insulator layer 10 The second part 30B covered by 103 and 104 over a specific height. The first portion 30A is electrically connected to the bottoms of the first and second comb-tooth block portions 241 and 242 via the conductor layers 301 and 302. The second portion 30B is formed on the end faces 103 and 104 of the insulator layer 10 so as to cover the comb teeth of the first and second comb tooth blocks 241 and 242. The columnar conductor 21, the connecting conductor 22, the lead portion 23, the comb block portion 24, and the conductor layers 301, 302 are made of, for example, a metal material such as Cu (copper), Al (aluminum), Ni (nickel), etc. In this embodiment Both are composed of copper or its alloy plating. The first and second external electrodes 31 and 32 are made of Ni/Sn plating, for example. FIG. 4 is a schematic perspective side view showing the electronic component 100 turned upside down. As shown in FIG. 4, the electronic component 100 is composed of a laminate of a film layer L1 and a plurality of electrode layers L2 to L6. In the present embodiment, the film layer L1 and the electrode layers L2 to L6 are sequentially stacked from the top surface 101 to the bottom surface 102 in the Z-axis direction. The number of layers is not particularly limited, and here is described as 6 layers. The film layer L1 and the electrode layers L2 to L6 include elements constituting the insulator portion 10 and the internal conductor portion 20 of the respective layers. 5A to F are schematic plan views of the film layer L1 and the electrode layers L2 to L6 in FIG. 4, respectively. The film layer L1 is composed of the top surface portion 12 of the insulator portion 10 forming the top surface 101 (FIG. 5A ). The electrode layer L2 includes an insulating layer 110 (112) constituting a part of the insulator portion 10 (body portion 11), and a first connecting conductor 221 (FIG. 5B). The electrode layer L3 includes an insulating layer 110 (113), and a via-hole conductor V1 constituting part of the columnar conductors 211 and 212 (FIG. 5C). The electrode layer L4 includes, in addition to the insulating layer 110 (114) and the via-hole conductor V1, a via-hole conductor V2 constituting a part of the comb-tooth block portions 241 and 242 (FIG. 5D). The electrode layer L5 includes lead portions 231, 232 or the second connection conductor 222 in addition to the insulating layer 110 (115) and the via-hole conductors V1 and V2 (FIG. 5E). Furthermore, the electrode layer L6 includes an insulating layer 110 (116) and a via conductor V2 (FIG. 5F). The electrode layers L2 to L6 are stacked in the height direction via the bonding surfaces S1 to S4 (FIG. 4 ). Therefore, each insulating layer 110 or via-hole conductors V1 and V2 have a boundary portion in the same height direction. Furthermore, the electronic component 100 is manufactured by a build-up method in which the electrode layers L2 to L6 are sequentially fabricated from the electrode layer L2 and laminated. [Basic Manufacturing Process] Next, the basic manufacturing process of the electronic component 100 will be described. The electronic component 100 is manufactured at the wafer level in parallel, and each component is singulated (wafered) after fabrication. 6 to 8 are schematic cross-sectional views illustrating element unit regions as part of the manufacturing process of the electronic component 100. As a specific manufacturing method, the resin film 12A (film layer L1) constituting the top surface portion 12 is bonded to the support substrate S, and electrode layers L2 to L6 are sequentially formed thereon. For the support substrate S, for example, a silicon substrate, a glass substrate, or a sapphire substrate can be used. Typically, the following steps are repeatedly performed, that is, the conductor pattern constituting the inner conductor portion 20 is produced by an electroplating method, and the conductor pattern is coated with an insulating resin material to produce the insulating layer 110. 6 and 7 show the manufacturing steps of the electrode layer L3. In this step, first, a seed layer (power supply layer) SL1 for electrical plating is formed on the surface of the electrode layer L2 by sputtering, for example (FIG. 6A). The seed layer SL1 is not particularly limited as long as it is a conductive material, and is composed of Ti (titanium) or Cr (chromium), for example. The electrode layer L2 includes an insulating layer 112 and a connection conductor 221. The connection conductor 221 is provided on the lower surface of the insulating layer 112 so as to be in contact with the resin film 12A. Then, a resist film R1 is formed on the seed layer SL1 (FIG. 6B). The resist film R1 is sequentially exposed, developed, and the like, whereby a plurality of openings P1 corresponding to the via-hole conductors V13 constituting part of the columnar conductors 21 (211, 212) are formed through the seed layer SL1 Resist pattern (Figure 6C). Thereafter, a deslagging process for removing the resist residue in the opening P1 is performed (FIG. 6D). Next, the support substrate S is immersed in a Cu plating bath, and a plurality of via conductors V13 including a Cu plating layer are formed in the opening P1 by applying a voltage to the seed layer SL1 (FIG. 6E ). Then, after removing the resist film R1 and the seed layer SL1 (FIG. 7A), an insulating layer 113 covering the via-hole conductor V13 is formed (FIG. 7B). The insulating layer 113 is printed on the electrode layer L2, coated with a resin material, or bonded with a resin film, and then cured. After curing, the surface of the insulating layer 113 is polished until a front end of the via-hole conductor V13 is exposed using a polishing device such as CMP (chemical mechanical polishing device) or a polishing machine (FIG. 7C). 7C shows, as an example, a state where the support substrate S is turned upside down and placed on the polishing head H capable of rotation, and the polishing process (CMP) of the insulating layer 113 is performed using the revolving polishing pad P. As above, the electrode layer L3 is formed on the electrode layer L2 (FIG. 7D). In addition, the description of the method for forming the insulating layer 112 is omitted. Typically, the insulating layer 112 is manufactured by the same method as the insulating layer 113, that is, after printing, coating, or bonding, it is hardened by The polishing is performed by CMP (Chemical Mechanical Polishing Device) or a grinder. Thereafter, the electrode layer L4 is formed on the electrode layer L3 in the same manner. First, a plurality of via-hole conductors (second via-hole conductors) connected to a plurality of via-hole conductors V13 (first via-hole conductors) are formed on the insulating layer 113 (second insulating layer) of the electrode layer L3. That is, a seed layer covering the surface of the first via conductor is formed on the surface of the second insulating layer, and an opening is formed on the seed layer in a region corresponding to the surface of the first via conductor In the resist pattern, the second via conductor is formed by an electroplating method using the resist pattern as a mask. Next, on the second insulating layer, a third insulating layer covering the second via conductor is formed. Thereafter, the surface of the third insulating layer is polished until the front end of the second via conductor is exposed. In addition, in the above-mentioned second through-hole conductor forming step, a through-hole conductor V2 (see FIGS. 4 and 5D) forming part of the comb-shaped block portion 24 (241, 242) is also formed at the same time. In this case, as the above-mentioned resist pattern, in addition to the above-mentioned resist pattern in which the formation region of the second via-conductor is provided, a resist pattern in which the formation region of the via-hole conductor V2 is provided is also formed. 8A to D show a part of the manufacturing process of the electrode layer L5. Here, first, a seed layer SL3 for electroplating and a resist pattern (resist film R3) having openings P2 and P3 are sequentially formed on the surface of the electrode layer L4 (FIG. 8A ). Thereafter, a deslagging process for removing the resist residues in the openings P2 and P3 is performed (FIG. 8B). The electrode layer L4 has an insulating layer 114 and via-hole conductors V14 and V24. The via-hole conductor V14 corresponds to the through-hole (V1) constituting part of the columnar conductor 21 (211, 212), and the via-hole conductor V24 corresponds to the through-hole (V2) constituting part of the comb-shaped block portion 24 (241, 242) (See Figures 5C, D). The opening P2 faces the via conductor V14 in the electrode layer L4 via the seed layer SL3, and the opening P3 faces the via conductor V24 in the electrode layer L4 via the seed layer SL3. The opening P2 is formed in a shape corresponding to each connecting conductor 222. Next, the support substrate S is immersed in a Cu plating bath, and a via conductor V25 and a connection conductor 222 including a Cu plating layer are formed in the openings P2 and P3 by applying a voltage to the seed layer SL3 (FIG. 8C) . The via-hole conductor V25 corresponds to a through-hole (V2) constituting a part of the comb-tooth block portion 24 (241, 242). Next, the resist film R3 and the seed layer SL3 are removed to form an insulating layer 115 covering the via-hole conductor V25 and the connection conductor 222 (FIG. 8D). Although not shown, the surface of the insulating layer 115 is polished until the front end of the via-hole conductor V25 is exposed, and the formation of the seed layer, the formation of the resist pattern, and the electroplating process are repeatedly performed. In this step, the electrode layer L5 shown in FIGS. 4 and 5E is produced. Thereafter, after the conductor layers 301 and 302 are formed on the comb-tooth blocks 24 (241 and 242) exposed on the surface (bottom surface 102) of the insulating layer 115, the first and second external electrodes 31 and 32 are formed, respectively. [Structure of the present embodiment] With the recent miniaturization of parts, there is a tendency that it is difficult to ensure the characteristics of the coil. That is, the characteristics of the coil component largely depend on the size and shape of the built-in coil portion. Typically, the larger the opening of the coil portion, the higher the inductance characteristics can be obtained. However, the size of the insulator portion is restricted due to the miniaturization of parts, and as a result, the effective area of the coil portion is reduced and the inductance characteristics are lowered. Therefore, in the present embodiment, by optimizing the size ratio of the opening of the coil portion, it is necessary to achieve both miniaturization and high characteristics of the coil component. 9A to C are schematic diagrams illustrating high-frequency characteristics of coil parts. The coil component 200 shown in FIG. 9A has a rectangular parallelepiped-shaped insulator portion 210 and a coil portion 220C arranged inside. Here, for easy understanding, the surrounding portion Cn of the coil portion 220C is represented by a simple rectangular ring-shaped area coated with oblique lines (hatched lines) (the same is true in FIG. 10 ). Furthermore, symbol 230 is an external electrode. In a typical miniaturization method of a coil component, the insulator portion 210 is made low-profile, so that the upper side (hereinafter referred to as the A side) and the lower side (hereinafter referred to as the B side) of the surrounding portion Cn are close to each other. When the A side and the B side of the surrounding portion Cn are close to each other, the influence between the magnetic flux (magnetic field) formed by the A side and the B side becomes larger. That is, as shown in FIG. 9B, the magnetic flux ΦA formed by the current IA flowing through the A side and the ΦB formed by the current IB flowing through the B side are in opposite directions, so the closer the A side and the B side are, the magnetic flux The greater the mutual interference (cancellation) between ΦA and magnetic flux ΦB. As a result, the magnetic flux ΦT of the entire opening of the surrounding portion Cn also becomes small, and the inductance as designed cannot be obtained. Therefore, in this embodiment, as shown in FIG. 9C, by increasing the distance between the A side and the B side, the mutual interference of the magnetic fluxes ΦA and ΦB formed by the two sides is suppressed, so that the magnetic flux of the entire surrounding portion Cn ΦT increases, thereby increasing the inductance. In addition, the increase in the inductance is related to the reduction in the line length at the same time. As a result, the resistance is suppressed low, so the Q value can be increased. The separation distance between the A side and the B side of the surrounding portion Cn can be realized by increasing the height of the insulator portion 210. As a result, the mounting area of the coil component does not become larger, so both the miniaturization of the coil component and the improvement of the coil characteristics are sought. In the coil component 200 using the above-mentioned typical miniaturization method, the size ratio (hd/ld) of the inner peripheral surface of the conductor located at the opening (core) of the surrounding portion must be reduced due to the outer dimensions of the chip component ( (See FIG. 9A). On the other hand, in this embodiment, it is re-recognized based on the outer dimensions of the wafer component, and it is characterized in that the size ratio (hd/ld) is increased without changing the size (part volume) of the insulator portion 10. As a result, the inductance can be efficiently increased, and as a result, a coil component with a high Q value can be obtained. Specifically, as shown in FIG. 10, the coil component 100 of the present embodiment is configured such that the ratio (Ha/La) of the height dimension (Ha) of the insulator portion 10 to the length dimension (La) becomes The ratio of the height dimension (hd) between the inner peripheral portions of the surrounding portion Cn in the Z-axis direction to the length dimension (ld) (hd/ld) between the inner peripheral portions of the surrounding portion Cn along the Y-axis direction is less than 1.5 times . As a result, the Q value of the coil component 100 can be effectively increased. Here, "the length dimension (ld) between the inner peripheral portions of the surrounding portion Cn along the Y-axis direction" refers to the distance between the opposing surfaces of the first and second columnar conductors 211, 212 that constitute the surrounding portion Cn The length about the Y-axis direction after the distance is projected onto the YZ plane. Also, "the height dimension (hd) between the inner peripheral portions of the surrounding portion Cn along the Z-axis direction" refers to projecting the distance between the opposing surfaces of the first and second connecting conductors 221 and 222 constituting the surrounding portion Cn The length of the Z axis direction after reaching the YZ plane. Regarding the measurement of dimensions, cross-section grinding and milling are carried out from the Z-axis direction (height direction) until the surface passing through the center of the insulator in the height direction is observed about 200 times with a scanning electron microscope (SEM). With this, the distance between the first columnar conductor 211 and the second columnar conductor 212 is measured, and this is used as the length dimension (ld) between the inner peripheral portions of the surrounding portion Cn. In addition, cross-section grinding and milling are carried out from the X-axis direction (width direction) until the surface passing through the center of the width direction of the insulator portion is measured by SEM, and the distance between the first connection conductor 221 and the second connection conductor 222 is measured as The height dimension (hd) between the inner peripheral parts of the part Cn. The dimensions of other parts are also measured using the above observation samples. The opening size ratio (hd/ld) of the surrounding portion Cn is not particularly limited, but in this embodiment, it is 0.6 or more and 1.2 or less. This can ensure a higher inductance value and Q value more stably. Also, the ratio (Sd/Sa) of the area (Sd) divided by the inner peripheral portion of the surrounding portion Cn to the area (Sa) of the insulator portion 12 when viewed from the coil axis direction (X axis direction) is not particularly limited, In this embodiment, it is 0.22 or more and 0.45 or less (22% or more and 45% or less). As a result, the inductance value of the coil component 100 can be effectively increased. Furthermore, according to the present embodiment, in FIG. 1, the front ends of the comb teeth of each of the first and second comb teeth blocks 241 and 242 are arranged to face upward, so that it is possible to compensate for the accompanying increase in the height of the insulator portion 10. Insufficient rigidity. Thereby, the reliability of the coil component 100 can be improved. <Experimental example> Hereinafter, an experimental example carried out by the present inventors will be described with reference to FIGS. 10 and 11. The opening of the surrounding portion Cn is called a core portion. (Experimental Example 1) A coil component sample having an insulator portion and a coil portion made of glass having the following dimensions is prepared. ∙Insulator part: length (La) 370 μm, width (Wa) 200 μm, height (Ha) 215 μm ∙coil part: Y-axis conductor size (lc) 35 μm, X-axis conductor size (wc)10 μm, the size of the conductor in the Z-axis direction (hc) 35 μm, the distance between the adjacent surrounding parts in the X-axis direction (inter-conductor distance g) 20 μm, the size of the core in the Y-axis direction (ld) 200 μm, the entire surrounding The Cn core dimension (wd) in the X-axis direction is 130 μm, and the Z-axis core dimension (hd) is 85 μm. Side edge: Y-axis direction dimension (lb) 50 μm, X-axis dimension dimension (wb) ) 30 μm, Z-axis dimension (hb) 30 μm For the prepared samples, use RF (radio frequency, RF) impedance analyzer (E4991A manufactured by Agilent) to measure the inductance (L value) (measurement frequency 500 MHz) And Q value (measurement frequency 1.8 GHz), L value is 2.6 nH, Q value is 27. (Experimental example 2) Let the insulator part have a length (La) of 350 μm, a width (Wa) of 200 μm, and a height (Ha) of 230 μm, and the size of the core part should be 180 μm in the Y-axis direction (ld) and X-axis direction ( wd) 130 μm, 100 μm in the Z-axis direction (hd), and samples were prepared under the same conditions as in Experimental Example 1. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.7 nH and the Q value was 28. (Experimental example 3) Let the insulator part have a length (La) of 320 μm, a width (Wa) of 200 μm, and a height (Ha) of 250 μm, and the size of the core part should be 150 μm in the Y-axis direction (ld) and X-axis direction ( wd) 130 μm, Z axis direction (hd) 120 μm, except that samples were prepared under the same conditions as in Experimental Example 1. For the produced sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.8 nH and the Q value was 29. (Experimental example 4) Let the insulator portion be 305 μm in length (La), 200 μm in width (Wa), and 265 μm in height (Ha), and set the core size to 135 μm in the Y-axis direction (ld) and X-axis direction ( wd) 130 μm, Z axis direction (hd) 135 μm, except that the samples were prepared under the same conditions as in Experimental Example 1. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.9 nH and the Q value was 30. (Experimental example 5) Let the insulator portion be 275 μm in length (La), 200 μm in width (Wa), 290 μm in height (Ha), and 105 μm in the Y axis direction (ld) and the X axis direction ( wd) 130 μm, Z axis direction (hd) 160 μm, except that the sample was prepared under the same conditions as in Experimental Example 1. For the prepared samples, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.6 nH and the Q value was 29. (Experimental example 6) Let the insulator portion be 265 μm in length (La), 200 μm in width (Wa), 300 μm in height (Ha), and 95 μm in the Y axis direction (ld) and the X axis direction ( wd) 130 μm, Z axis direction (hd) 170 μm, except that the sample was prepared under the same conditions as in Experimental Example 1. For the produced sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.3 nH and the Q value was 28. (Experimental Example 7) A coil component sample having an insulator portion and a coil portion made of resin having the following dimensions is produced. ∙Insulator part: length (La) 410 μm, width (Wa) 200 μm, height (Ha) 195 μm ∙coil part: Y-axis conductor size (lc) 35 μm, X-axis conductor size (wc)24 μm, conductor size in the Z axis direction (hc) 35 μm, distance between conductors (g) 10 μm, core size in the Y axis direction (ld) 250 μm, core size in the X axis direction (wd) 160 μm, Z Core dimension in the axial direction (hd) 85 μm ∙ Side edge: dimension in the Y-axis direction (lb) 45 μm, dimension in the X-axis direction (wb) 20 μm, dimension in the Z-axis direction (hb) 20 μm For the sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.0 nH and the Q value was 31. (Experimental Example 8) Let the insulator portion be 380 μm in length (La), 200 μm in width (Wa), 210 μm in height (Ha), and the core size be 220 μm in the Y-axis direction (ld), and the X-axis direction ( wd) 160 μm, 100 μm in the Z-axis direction (hd), except that samples were prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.2 nH and the Q value was 32. (Experimental example 9) Let the insulator portion be 350 μm in length (La), 200 μm in width (Wa), and 230 μm in height (Ha), and set the core size to 190 μm in the Y axis direction (ld), and the X axis direction ( wd) 160 μm, 120 μm in the Z-axis direction (hd), except that the sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.3 nH and the Q value was 33. (Experimental example 10) Let the insulator part have a length (La) of 320 μm, a width (Wa) of 200 μm, and a height (Ha) of 250 μm, and the core part size should be 160 μm in the Y-axis direction (ld) and X-axis direction ( wd) 160 μm, 140 μm in the Z-axis direction (hd), except that a sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.4 nH and the Q value was 34. (Experimental Example 11) Let the insulator part be 310 μm in length (La), 200 μm in width (Wa), 260 μm in height (Ha), and 150 μm in the Y axis direction (ld) and the X axis direction ( wd) 160 μm, 150 μm in the Z-axis direction (hd), and samples were prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.5 nH and the Q value was 34. (Experimental example 12) Let the insulator part have a length (La) of 275 μm, a width (Wa) of 200 μm, and a height (Ha) of 290 μm, and the core part size should be 115 μm in the Y axis direction (ld) and X axis direction ( wd) 160 μm, Z axis direction (hd) 180 μm, except that the sample was prepared under the same conditions as Experimental Example 7. For the produced sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.3 nH and the Q value was 32. (Experimental example 13) Let the insulator portion be 255 μm in length (La), 200 μm in width (Wa), 315 μm in height (Ha), and 95 μm in the Y axis direction (ld) and the X axis direction ( wd) 160 μm, Z axis direction (hd) 205 μm, except that the sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.1 nH and the Q value was 31. (Experimental example 14) Let the insulator part be 310 μm in length (La), 200 μm in width (Wa), and 260 μm in height (Ha), and set the conductor size (lc) in the Y axis direction to 30 μm, and the X axis direction. The conductor size (wc) is set to 24 μm, the Z axis direction conductor size (hc) is set to 30 μm, and the core size is set to Y axis direction (ld) 160 μm, X axis direction (wd) 160 μm, Z axis In the direction (hd) of 160 μm, a sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.6 nH and the Q value was 36. (Experimental example 15) Let the insulator be 310 μm in length (La), 200 μm in width (Wa), and 260 μm in height (Ha), and set the conductor size (lc) in the Y-axis direction to 25 μm, and the X-axis direction The conductor size (wc) is set to 24 μm, the conductor size in the Z axis direction (hc) is set to 25 μm, and the core size is set to Y axis direction (ld) 170 μm, X axis direction (wd) 160 μm, Z axis In the direction (hd) of 170 μm, a sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 3.8 nH and the Q value was 37. (Experimental example 16) The insulator part was set to length (La) 310 μm, width (Wa) 200 μm, height (Ha) 260 μm, the conductor size (lc) in the Y-axis direction was set to 20 μm, and the X-axis direction The conductor size (wc) is 24 μm, the conductor size (hc) in the Z axis direction is 20 μm, the core size is 180 μm in the Y axis direction (ld) and 160 μm in the X axis direction (wd), In the Z-axis direction (hd) of 180 μm, a sample was prepared under the same conditions as in Experimental Example 7. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 4.2 nH and the Q value was 37. (Experimental example 17) The insulator part was set to length (La) 310 μm, width (Wa) 200 μm, height (Ha) 260 μm, the conductor size (lc) in the Y-axis direction was set to 15 μm, and the X-axis direction The conductor size (wc) is set to 24 μm, the conductor size in the Z axis direction (hc) is set to 15 μm, the core size is set to Y axis direction (ld) 190 μm, X axis direction (wd) 160 μm, In the Z-axis direction (hd) of 190 μm, a sample was prepared under the same conditions as in Experimental Example 7. For the produced sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 4.8 nH and the Q value was 36. (Comparative Example 1) Let the insulator portion have a length (La) of 400 μm, a width (Wa) of 200 μm, and a height (Ha) of 200 μm, and the size of the core portion should be 230 μm in the Y-axis direction (ld) and X-axis direction ( wd) 130 μm, Z axis direction (hd) 70 μm, except that the samples were prepared under the same conditions as in Experimental Example 1. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.2 nH and the Q value was 22. (Comparative Example 2) Let the insulator portion have a length (La) of 407 μm, a width (Wa) of 200 μm, and a height (Ha) of 202 μm, and the size of the core portion should be Y axis direction (ld) 237 μm, X axis direction ( wd) 130 μm, Z axis direction (hd) 72 μm, except that the sample was prepared under the same conditions as Experimental Example 1. For the prepared sample, the inductance (L value) and Q value were measured under the same conditions as in Experimental Example 1. The L value was 2.3 nH, and the Q value was 23. The conditions, size ratios, areas of insulator parts and core parts and their area ratios viewed from the coil axis direction (X-axis direction), and coil characteristics of Experimental Examples 1 to 17 and Comparative Examples 1 and 2 are collectively shown in Table 1~3. [Table 1]
Figure 106110097-A0304-0001
[Table 2]
Figure 106110097-A0304-0002
[table 3]
Figure 106110097-A0304-0003
As shown in Tables 2 and 3, according to Experimental Examples 1 to 17 which are 1.5 times or less the size ratio of the insulator portion (Ha/La) to the core portion (hd/ld), it is confirmed that the size of the insulator portion can be obtained The ratio (Ha/La) exceeds 1.5 times the size ratio (hd/ld) of the core part, and the Q value is higher in Comparative Examples 1 and 2. In addition, according to Experimental Examples 3 to 5 in which the size ratio (hd/ld) of the core portion is 0.8 or more and 1.5 or less, it is confirmed that a higher Q value (29 or more) than Experimental Examples 1, 2, and 6 can be obtained. Similarly, according to the experimental examples 9 to 11, 14 to 17 in which the size ratio (hd/ld) of the core part is 0.6 or more and 1.0 or less, it is confirmed that higher (exceeding 32) than experimental examples 7, 8, 12, and 13 can be obtained. Q value. In addition, according to Experimental Examples 2 to 4 in which the size ratio (hd/ld) of the core portion is 0.6 or more and 1.0 or less, it was confirmed that L values higher than Experimental Examples 1, 5, and 6 (2.7 nH or more) can be obtained. Furthermore, according to Experimental Examples 2 to 4, 7 to 17 in which the ratio of the area of the core (Sd) to the area of the insulator (Sa) (Sd/Sa) is 22% or more and 45% or less, it is confirmed that 2.7 nH can be obtained The higher inductance value above. Viewed individually below, in Experimental Example 1, although it is approximately the same core area as Comparative Example 2, the size ratio (wd/ld) of the core is larger than that of Comparative Example 2, so a higher Q is obtained than Comparative Example 2. value. In Experimental Example 4, the size ratio (wd/ld) of the core portion became approximately 1, so the highest Q value was obtained in Experimental Examples 1 to 6. In Experimental Examples 7 to 17, compared to Experimental Examples 1 to 6, the insulation of the insulator portion is high, and the conductor size can be increased to the maximum, so the inductance value can be increased. Along with this, the Q value can also be made higher, being 31 or more. The embodiments of the present invention have been described above, but of course the present invention is not limited to the above-mentioned embodiments, but various modifications can be applied. For example, in the above embodiment, the method of sequentially depositing the insulating layer and the via-hole conductor from the top surface side to the bottom surface side of the coil component has been described, but it is not limited to this, and may also be from the bottom surface side to the top surface side Insulating layers and via conductors are sequentially stacked. In addition, the present invention can also be applied to a method of manufacturing a coil component in which the surrounding portions of the coil portion are sequentially stacked in the direction of the coil axis. Furthermore, in the above-mentioned embodiment, the surrounding portion viewed from the Z-axis direction is a quadrangle. However, even if it is polygonal, with rounded corners formed in part, etc., the same effect can be obtained as long as the surrounding portion conductors have a facing positional relationship. In addition, in the above embodiment, the coil axis of the coil component is set to the X-axis direction (width direction), but the same effect can be obtained even if the coil axis direction is the Z-axis direction (height direction). Furthermore, whether the material used in the insulator portion is glass or resin, for example, even if a part of ferrite powder is included, as long as the magnetic permeability is 2 or less, the same effect can be obtained. In addition, as long as the dielectric constant is 5 or less, the high-frequency characteristics are particularly good, and as long as the dielectric constant is 4 or less, the stray capacitance between the terminal electrode and the terminal electrode can be further reduced, and the high-frequency The Q value increases. <Second Embodiment> In the above-mentioned first embodiment, the electronic parts in which the comb-tooth blocks are arranged have been described, but the electronic components in which the comb-tooth blocks 24 are not arranged as shown in the above FIGS. 1 to 3 may also be used Electronic parts will be described below as modified examples. In each of the following configuration examples, the ratio (Ha/La) of the height dimension (Ha) of the insulator portion to the length dimension (La) is also formed between the inner peripheral portions of the surrounding portion Cn along the Z-axis direction The ratio of the height dimension (hd) to the length dimension (ld) between the inner peripheral portions of the surrounding portion Cn along the Y-axis direction (hd/ld) is 1.5 times or less. The opening size ratio (hd/ld) of the surrounding portion Cn is not particularly limited, but in this embodiment, it is 0.6 or more and 1.0 or less. This can ensure a higher inductance value and Q value more stably. Also, the ratio (Sd/Sa) of the area (Sd) divided by the inner peripheral portion of the surrounding portion Cn to the area (Sa) of the insulator portion (Sd/Sa) when viewed from the coil axis direction (X-axis direction) is not particularly limited, but is In this embodiment, it is 0.22 or more and 0.65 or less (22% or more and 65% or less). Thereby, the inductance value of the coil parts can be efficiently increased. (First Configuration Example) In the electronic component of the first configuration example, the comb block portion is not arranged. With this, when the internal conductor portion is arranged in the insulator portion of the same volume, the design range of the coil portion becomes larger and the opening area of the coil portion can be enlarged compared to the case where the comb tooth portion portion is arranged, so that the L value, The Q value increases. In addition, in this configuration example, since the comb block portion is not arranged, it is possible to form a structure in which the external electrode is formed only on one surface of the rectangular parallelepiped-shaped insulator portion, and it is possible to form a one-side mounting type electronic component. The coil component of the above-mentioned embodiment is a three-surface mounting type electronic component in which an external electrode is formed on three surfaces 102, 103, and 104 of a rectangular parallelepiped-shaped insulator portion, but it is not limited to this, and may be provided as in this configuration example This is a one-side mounted electronic component in which external electrodes are formed only on one surface of the insulator portion. Furthermore, in the above-described embodiment, the connection between the coil portion and the external electrode is performed via the comb block portion and the lead wire. However, in this configuration example, the connection between the coil portion and the external electrode is performed via the via conductor layer for connection. Hereinafter, the electronic component of the first configuration example will be described using FIGS. 12 to 14. 12A is a schematic perspective perspective view of a coil component of a first configuration example of this embodiment, FIG. 12B is an external perspective view thereof, FIG. 13A is a schematic perspective side view thereof, FIG. 13B is an external perspective side view, and FIG. 14 is a schematic perspective top view thereof . In addition, the X-axis, Y-axis, and Z-axis directions in each figure represent three-axis directions orthogonal to each other. The electronic component 1100 of this configuration example is configured as a coil component for surface mounting. The electronic component 1100 includes an insulator portion 1010, an internal conductor portion 1020, and an external electrode 1030. The insulator portion 1010 has a top surface 1101, a bottom surface 1102, a first end surface 1103, a second end surface 1104, a first side surface 1105, and a second side surface 1106, and is formed to have a width direction in the X-axis direction and a length direction in the Y-axis direction And, it has a rectangular parallelepiped shape in the height direction in the Z-axis direction. The bottom surface 1102 becomes the mounting surface. The insulator portion 1010 has a body portion 1011 and a top surface portion 12. The body portion 1011 contains an internal conductor portion 1020 and constitutes the main part of the insulator portion 1010. The top surface portion 12 constitutes a top surface 1101 of the insulator portion 1010. The material used for the insulator portion 1010 is the same as the above-mentioned embodiment. The internal conductor portion 1020 is provided inside the insulator portion 1010. The inner conductor portion 1020 has a plurality of columnar conductors 1021, a plurality of connection conductors 1022, and a via conductor layer for connection V1023. The plurality of columnar conductors 1021 and the connection conductor 1022 constitute a coil portion 1020L. In addition, the via-hole conductor layer V1023 for connection is connected to each of both end portions of the coil portion 1020L. The plurality of columnar conductors 1021 are formed in a substantially cylindrical shape having an axis center parallel to the Z-axis direction. The plural columnar conductors 1021 are composed of two conductor groups facing each other in the substantially Y-axis direction. The first columnar conductors 10211 constituting one of the conductor groups are arranged at a specific interval in the X-axis direction, and the second columnar conductors 10212 constituting the other conductor group are similarly spaced apart in the X-axis direction. Arranged at intervals. In addition, the so-called substantially cylindrical shape includes not only cylinders with a circular cross-section in the direction perpendicular to the axis (direction perpendicular to the axis), but also cylinders with an elliptical or oblong cross-sectional shape as ellipses. A shape or an oval shape means, for example, a ratio of long axis/short axis of 3 or less. The first and second columnar conductors 10211 and 10212 are formed with the same diameter and the same height, respectively. In the example shown in the figure, five first and second columnar conductors 10211 and 10212 are provided respectively. As described below, the first and second columnar conductors 10211 and 10212 are formed by stacking a plurality of through-hole conductors in the Z-axis direction. Furthermore, the so-called approximately the same diameter refers to those used to suppress the increase in resistance, and the size variation observed in the same direction falls within 10%, for example, and the so-called approximately the same height refers to those used to ensure the stacking accuracy of each layer, and The unevenness in height falls within, for example, ±10 μm. The plurality of connecting conductors 1022 is composed of two conductor groups formed parallel to the XY plane and facing each other in the Z-axis direction. The first connecting conductors 10221 constituting one of the conductor groups extend in the Y-axis direction and are arranged at intervals in the X-axis direction to connect the first and second columnar conductors 10211 and 10212, respectively. The second connecting conductor 10222 constituting another conductor group extends obliquely at a specific angle with respect to the Y-axis direction, and is arranged at intervals in the X-axis direction, each of the first and second columnar conductors 10211 and 10212 connection. In the example shown in the figure, the first connection conductor 10221 is composed of five connection conductors, and the second connection conductor 10222 is composed of four connection conductors. In FIG. 12, the first connecting conductor 10221 is connected to the upper end of a specific group of columnar conductors 10211 and 10212, and the second connecting conductor 10222 is connected to the lower end of a specific group of columnar conductors 10211 and 10212. In more detail, the first and second columnar conductors 10211 and 10212 and the first and second connecting conductors 10221 and 10222 constitute a surrounding portion Cn (C1 to C5) of the coil portion 1020L, and these surrounding portions Cn surround the X axis The directions are connected to each other in such a way as to draw a rectangular spiral. Thereby, inside the insulator portion 1010, a coil portion 1020L having a rectangular opening shape with an axis (coil axis) in the X-axis direction is formed. In this embodiment, the surrounding portion Cn is composed of five surrounding portions C1 to C5. The opening shapes of the surrounding portions C1 to C5 are formed to be substantially the same shape. The via-hole conductor layer for connection V1023 has a first via-hole conductor layer for connection V10231 and a second via-hole conductor layer for connection V10232. The first via-hole conductor layer V10231 is connected to and connected to the lower end of the first columnar conductor 10211 constituting one end of the coil portion 1020L, and the second via-hole conductor layer V10232 is connected to the second pillar constituting the other end of the coil portion 1020L The lower ends of the linear conductors 10212 are connected and connected. In the first and second via conductor layers V10231 and V10232, the cross-sectional shape perpendicular to the Z-axis direction is substantially circular, and has the same size and shape as the cross-section perpendicular to the Z-axis direction of the columnar conductor 1021 . The external electrode 1030 constitutes an external terminal for surface mounting, and has first and second external electrodes 1031 and 1032 facing each other in the Y-axis direction. The first and second external electrodes 1031 and 1032 are formed only on the bottom surface 1102 of the insulator portion 1010 as one surface. The external electrode 1030 is formed outside the insulator portion 1010. The columnar conductor 1021, the connection conductor 1022, and the via conductor layer V1023 for connection are made of, for example, a metal material such as Cu (copper), Al (aluminum), and Ni (nickel), and any of the embodiments is made of copper Or its alloy plating layer. The first and second external electrodes 1031 and 1032 are formed by Ni/Sn plating, for example. FIG. 15 is a schematic perspective side view showing the electronic component 1100 turned upside down. As shown in FIG. 15, the electronic component 1100 is composed of a laminate of a film layer L1001 and a plurality of electrode layers L1002 to L1006. In the present embodiment, the film layer L1001 and the electrode layers L1002 to L1006 are sequentially stacked from the top surface 1101 to the bottom surface 1102 in the Z-axis direction. The number of layers is not particularly limited, and here is described as 6 layers. The film layer L1001 and the electrode layers L1002 to L1006 include elements constituting the insulator portion 1010, the internal conductor portion 1020, and the external electrode 1030 of each layer. 16A to 16F are schematic plan views of the film layer L1001 and the electrode layers L1002 to L1006 in FIG. 15, respectively. The film layer L1001 is composed of the top surface portion 12 of the insulator portion 1010 forming the top surface 1101 (FIG. 16A ). The electrode layer L1002 includes an insulating layer 10110 (10112) constituting part of the insulator portion 1010 (body portion 1011), and a first connecting conductor 10221 (FIG. 16B). The electrode layer L1003 includes an insulating layer 10110 (10113), and a via-hole conductor V1001 constituting part of the columnar conductors 10211 and 10212 (FIG. 16C). The electrode layer L1004 includes a second connection conductor 10222 (FIG. 16D) in addition to the insulating layer 10110 (10114) and the via-hole conductor V1001. The electrode layer L1005 includes an insulating layer 10110 (10115) and a via conductor layer for connection V1023 (first via conductor layer for connection V10231 and second via conductor layer for connection V10232) (FIG. 16E). Furthermore, the electrode layer L1006 includes an external electrode 1030 (first external electrode 1031, second external electrode 1032) (FIG. 16F). The electrode layers L1002 to L1006 are stacked in the height direction via the bonding surfaces S1 to S4 (FIG. 15 ). Therefore, each insulating layer 10110, via-hole conductor V1001, connection via-hole conductor layer V1023, and external electrode 1030 have a boundary portion in the same height direction. Furthermore, the electronic component 1100 is manufactured by the same build-up method as the above-described embodiment, in which the electrode layers L1002 to L1006 are sequentially fabricated from the electrode layer L1002 and laminated. As described above, in the electronic component 1100 of the first configuration example, the comb block portion is not arranged, so the size of the core portion (ld) in the Y-axis direction can be enlarged. Thereby, the opening area of the coil portion 1020L can be enlarged, and the L value and Q value can be improved. Also, in this configuration example, the external electrode 1030 which is an external terminal for surface mounting is formed only on one side of the electronic component 1100, so when the electronic component 1100 is mounted by soldering, the mounting surface is only one side, so High-density mounting can be carried out without forming solder fillets. In addition, since the coil portion 1020L and the external electrode 1030 are connected via the via conductor layer V1023 for connection, the current path from the external electrode to the coil portion 1020 can be shortened as compared with the case where the comb block portion is arranged. Thereby, the electronic component 1100 with less noise generation and less characteristic deterioration can be obtained. (Second configuration example) In the above-mentioned first configuration example, the cross-sectional shape of the connection via-hole conductor layer V1023 perpendicular to the Z-axis direction has a substantially circular shape, but it is not limited to this, and may have an oblong shape, for example. Hereinafter, it will be described as a second configuration example. The configuration different from the first configuration example will be mainly described. For the same configuration, the same symbols are given and the description is omitted. In this configuration example, as in the first configuration example, the opening area of the coil portion can be increased, and thereby the L value and Q value can be increased. Hereinafter, the coil component of the second configuration example will be described using FIGS. 17 to 19. 17 is a schematic perspective perspective view of coil components. Fig. 18 is a schematic perspective side view thereof. Fig. 19 is a schematic perspective plan view thereof. The electronic component 2100 of this configuration example is configured as a coil component for surface mounting. The electronic component 2100 includes an insulator portion 2010, an internal conductor portion 2020, and an external electrode 1030. The insulator portion 2010 has a body portion 2011 and a top surface portion 12. The body portion 2011 contains an internal conductor portion 2020 and constitutes a main part of the insulator portion 2010. The insulator portion 2010 has a top surface 2101, a bottom surface 2102, a first end surface 2103, a second end surface 2104, a first side surface 2105, and a second side surface 2106, and is formed to have a width direction in the X-axis direction and a length in the Y-axis direction Direction, and has a rectangular parallelepiped shape in the height direction in the Z-axis direction. The internal conductor portion 2020 is provided inside the insulator portion 2010. The inner conductor portion 2020 includes a plurality of columnar conductors 1021, a plurality of connection conductors 1022, and a via conductor layer for connection V2023. The plurality of columnar conductors 1021 and the connection conductor 1022 constitute a coil portion 1020L. In addition, the via conductor layer for connection V2023 is connected to each of both end portions of the coil portion 1020L. The via-hole conductor layer for connection V2023 has a first via-hole conductor layer for connection V20231 and a second via-hole conductor layer for connection V20232. The first via-hole conductor layer V20231 is connected to the lower end of the first columnar conductor 10211 constituting one end of the coil portion 1020L, and the second via-hole conductor layer V20232 is connected to the second columnar conductor constituting the other end of the coil portion 1020L The lower end of 10212 is connected. The cross-sectional shape of the first and second via conductor layers V20231 and V20232 perpendicular to the Z-axis direction is oblong, and has a larger cross-sectional shape than that of the columnar conductor 1021 perpendicular to the Z-axis direction. In other words, when the columnar conductor 1021 and the via-hole conductor layer V2023 are projected on the XY plane, the substantially circular projection of the columnar conductor 1021 is all included in the projection view of the substantially oblong shape of the via-hole conductor layer V2023 in. The external electrode 1030 constitutes an external terminal for surface mounting, and has first and second external electrodes 1031 and 1032 facing each other in the Y-axis direction. The first and second external electrodes 1031 and 1032 are formed on the bottom surface 2102 of the insulator portion 2010 as only one surface. As described above, in this configuration example, the cross-sectional shape of the connection via-hole conductor layer V2023 is set to an oval, and a cross-sectional shape larger than that of the columnar conductor 1021 constituting part of the coil portion 1020L is formed, thereby increasing The contact area of the large coil portion 1020L and the external electrode 1030. (Third Configuration Example) In each of the above configuration examples, a dummy via-hole conductor layer that does not electrically connect the coil portion 1020L and the external electrode 1030 may be provided in the same layer as the via-hole conductor layers V1023 and V2023 for connection, hereinafter, This will be described as a third configuration example. The dummy via conductor layer is in contact with the external electrode 1030 to form a plurality of insulators. By providing the dummy via conductor layer, the adhesion strength between the external electrode 1030 and the insulator portion 1010 can be improved. The arrangement of the dummy via conductor layer can be applied to the above-mentioned configuration example and the above-mentioned embodiment. 20 is a schematic perspective perspective view of a coil component of a third configuration example. Fig. 21 is a schematic perspective side view thereof. Fig. 22 is a schematic perspective plan view thereof. In the third configuration example, the case where the dummy via conductor layer is provided in the above-mentioned first configuration example is taken as an example for description, and the same configuration as the first configuration example is denoted by the same symbol, and the description is omitted. The electronic component 3100 of this configuration example is configured as a coil component for surface mounting. The electronic component 3100 includes an insulator portion 3010, an internal conductor portion 1020, and an external electrode 1030. The insulator portion 3010 has a body portion 3011 and a top surface portion 12. The body portion 3011 contains an internal conductor portion 1020 and a dummy via conductor layer 3040, and constitutes a main part of the insulator portion 3010. The insulator portion 3010 has a top surface 3101, a bottom surface 3102, a first end surface 3103, a second end surface 3104, a first side surface 3105, and a second side surface 3106, and is formed to have a width direction in the X-axis direction and a length in the Y-axis direction Direction, and has a rectangular parallelepiped shape in the height direction in the Z-axis direction. The dummy via conductor layer 3040 is composed of a plurality of protrusions provided on the inner surface portion of the external electrode 1030 opposite to the bottom surface 3102 of the rectangular-shaped insulator portion 3010. The bottom surface 3102 of the insulator portion 3010 is shown in FIG. Of inside. The front end portion of the dummy via-hole conductor layer 3040 faces the inner conductor portion 1020 via the insulating material constituting the insulator portion 3010, and therefore does not contact the coil portion 1020L. The dummy via-hole conductor layer 3040 is formed in the same layer as the via-hole conductor layer V1023 for connection. The plurality of dummy via conductor layers 3040 are composed of two conductor layer groups facing each other in the Y-axis direction. The first dummy via conductor layers 3041 constituting one of the conductor layer groups correspond to the four corners of the substantially rectangular first external electrode 1031 on the XY plane, and are arranged one at a time. The second dummy via conductor layers 3042 constituting another conductor layer group correspond to the four corners of the substantially rectangular second external electrode 1032 on the XY plane, and are arranged one at a time. The dummy via conductor layer 3040 is electrically insulated from the inner conductor portion 1020 by the insulating layer constituting the insulator portion 3011. In this modification, the provision of the dummy via conductor layer 3040 improves the adhesion strength between the external electrode 1030 and the insulator portion 3011. That is, in the manufacturing method of the external electrode 1030, the following method can be adopted, that is, for example, electroplating is provided in the same manner as the method of manufacturing the conductor pattern constituting the internal conductor portion of the above embodiment by the electroplating method After the seed layer is used, and a resist pattern having an opening is provided, an external electrode is formed by an electroplating method. In this method, by making the external electrode 1030, a strong connection between the dummy via-hole conductor layer 3040 and the external electrode 1030 is generated, so that the adhesion strength between the insulator portion 3011 and the external electrode 1030 is improved. <Characteristics of Electronic Parts> The electronic parts of the present invention are not limited to the above embodiments, and for example, the configurations shown in FIGS. 23 and 24 may be adopted. 23 and 24 are schematic perspective views of the electronic parts of the above embodiment. 23 are diagrams showing electronic parts in which comb tooth blocks 24 are arranged as in the first embodiment described above, and FIG. 24 are diagrams showing electronic parts in which comb tooth blocks are not arranged as in the second embodiment above. . For the same configurations as the above-mentioned embodiments, the same symbols are attached. The external dimensions of each electronic component shown in FIGS. 23 and 24 are the same. For any electronic component, the ratio of the height dimension (Ha) of the insulator portion to the length dimension (La) (Ha/La), Becomes the ratio (hd/ld) of the ratio of the height dimension (hd) between the inner peripheral portions of the surrounding portion Cn along the Z-axis direction to the length dimension (ld) between the inner peripheral portions of the surrounding portion Cn along the Y-axis direction Times below. 23A is a schematic perspective side view of the electronic component 100 according to the first embodiment. 23B is a schematic perspective side view of the electronic component 4100 in the following form, that is, compared with the electronic component 100, the electronic component 4100 is not provided with the lead-out portion 23, and via the via-hole conductor layer V1023 as in the second embodiment described above The external electrode 30 is connected to the coil part 1020L. 23C is a schematic perspective side view of the electronic component 5100 in the following case, that is, compared with the electronic component 3100 of FIG. 23B, the length of the comb-shaped portion 24 of the electronic component 5100 in the Y-axis direction is shorter, and the coil portion 1020L The distance from the comb block portion 24 is longer. In each drawing of FIG. 23, the size (1b) of the side edge between the coil portion 20L in the Y-axis direction (left-right direction in the drawing) and the end surface of the insulator portion is 45 μm. Each drawing in FIG. 24 corresponds to the electronic component 1100 of the second embodiment (first configuration example) described above, and only the size (1b) of the side edge in the Y-axis direction is different, and the basic configuration is the same. The side edge 1b of the electronic part 1100A shown in FIG. 24A is 45 μm, the side edge 1b of the electronic part 1100B shown in FIG. 24B is 20 μm, and the side edge 1b of the electronic part 1100C shown in FIG. 24C is 10 μm. FIG. 25 shows the inductance (L value) characteristics of each electronic component shown in FIGS. 23 and 24. Fig. 26 shows the Q value characteristics of the electronic parts shown in Figs. 23 and 24. In FIGS. 25 and 26, 23A on the horizontal axis corresponds to the electronic parts shown in FIG. 23A. Similarly, 23B, 23C, 24A, 24B, and 24C correspond to FIGS. 23B, 23C, 24A, and 24B, respectively. The electronic parts shown in FIG. 24C plot the inductance and Q value of each electronic part. As shown in Fig. 25 and Fig. 26, it is shown that the L value of any electronic component is 3.0 nH or more, and the Q value is 30 or more, and a higher inductance value and Q value can be obtained. Furthermore, by enlarging the opening (core) of the coil portion, the inductance characteristics and Q value characteristics can be further improved. FIG. 27 is a diagram comparing the formation area of the internal conductor portion according to the configuration of the electronic component. In each figure of FIG. 27, each dimension is described as an example in which the external shape of the electronic component is 200 μm (width)×400 μm (horizontal length)×200 μm (height). FIG. 27B is a schematic external side view of the one-side mounted electronic component 1100 shown in the second embodiment (first configuration example). FIG. 27C is a schematic perspective side view of the three-sided mounting electronic component 100 shown in the first embodiment. FIG. 27D shows a schematic external side view of the conventional 5-side mounted electronic component 7100, and symbol 7030 indicates an external electrode. For any electronic part, the thickness of the external electrode is set to 10 μm. FIG. 27A shows an example of a case where the outer shape of the insulator portion is equal to the outer shape of the electronic component, and the volume of the insulator portion 6010 at this time is set to 100%, and the insulator in the electronic component shown in each of FIGS. 27B to 27D is calculated. The proportion of the Ministry. In the one-sided electronic component 1100 of FIG. 27B, the proportion of the insulator portion 1010 becomes 95%, and in the three-sided electronic component 100 of FIG. 27C, the proportion of the insulator portion 10 becomes 84%. In the 7D 5-side mounting electronic part 7100, the proportion of the insulator part is 76.95%. The higher the proportion of the insulator portion in the electronic component, the larger the area where the internal conductor portion disposed inside the insulator portion can be formed. Therefore, as compared with any one of the electronic component 1100 of the one-side mounting type and the electronic component 100 of the three-side mounting type, compared with the previous electronic component 7100 of the five-side mounting type, the formation area of the internal conductor portion becomes larger and can be expanded The opening (core) of the coil part. With this, the L value and the Q value can be increased.

10‧‧‧絕緣體部 11‧‧‧本體部 12‧‧‧頂面部 12A‧‧‧樹脂膜 20‧‧‧內部導體部 20L‧‧‧線圈部 21‧‧‧柱狀導體 22‧‧‧連結導體 23‧‧‧引出部 24‧‧‧梳齒塊部 30‧‧‧外部電極 30A‧‧‧第1部分 30B‧‧‧第2部分 31‧‧‧第1外部電極 32‧‧‧第2外部電極 100‧‧‧電子零件(線圈零件) 101‧‧‧頂面 102‧‧‧底面 103‧‧‧第1端面 104‧‧‧第2端面 105‧‧‧第1側面 106‧‧‧第2側面 110‧‧‧絕緣層 112‧‧‧絕緣層 113‧‧‧絕緣層 115‧‧‧絕緣層 116‧‧‧絕緣層 200‧‧‧線圈零件 210‧‧‧絕緣體部 211‧‧‧柱狀導體 212‧‧‧柱狀導體 220C‧‧‧線圈部 221‧‧‧連結導體 222‧‧‧連結導體 230‧‧‧外部電極 231‧‧‧第1引出部 232‧‧‧第2引出部 241‧‧‧第1梳齒塊部 242‧‧‧第2梳齒塊部 301‧‧‧導體層 302‧‧‧導體層 1010‧‧‧絕緣體部 1011‧‧‧本體部 1020‧‧‧內部導體部 1020L‧‧‧線圈部 1021‧‧‧柱狀導體 1022‧‧‧連結導體 1030‧‧‧外部電極 1031‧‧‧第1外部電極 1032‧‧‧第2外部電極 1100‧‧‧電子零件(線圈零件) 1100A‧‧‧電子零件(線圈零件) 1100B‧‧‧電子零件(線圈零件) 1100C‧‧‧電子零件(線圈零件) 1101‧‧‧頂面 1102‧‧‧底面 1103‧‧‧第1端面 1104‧‧‧第2端面 1105‧‧‧第1側面 1106‧‧‧第2側面 2010‧‧‧絕緣體部 2011‧‧‧本體部 2012‧‧‧底面 2020‧‧‧內部導體部 2100‧‧‧電子零件(線圈零件) 2101‧‧‧頂面 2102‧‧‧底面 2103‧‧‧第1端面 2104‧‧‧第2端面 2105‧‧‧第1側面 2106‧‧‧第2側面 3010‧‧‧絕緣體部 3011‧‧‧本體部 3040‧‧‧虛設通孔導體層 3041‧‧‧虛設通孔導體層 3042‧‧‧虛設通孔導體層 3100‧‧‧電子零件(線圈零件) 3101‧‧‧頂面 3102‧‧‧底面 3103‧‧‧第1端面 3104‧‧‧第2端面 3105‧‧‧第1側面 3106‧‧‧第2側面 4100‧‧‧電子零件(線圈零件) 5100‧‧‧電子零件(線圈零件) 7030‧‧‧外部電極 7100‧‧‧電子零件 10110‧‧‧絕緣層 10112‧‧‧絕緣層 10113‧‧‧絕緣層 10114‧‧‧絕緣層 10115‧‧‧絕緣層 10211‧‧‧柱狀導體 10212‧‧‧柱狀導體 10221‧‧‧第1連結導體 10222‧‧‧第2連結導體 Cn‧‧‧環繞部 C1‧‧‧環繞部 C2‧‧‧環繞部 C3‧‧‧環繞部 C4‧‧‧環繞部 C5‧‧‧環繞部 G‧‧‧導體間距離 H‧‧‧研磨頭 Ha‧‧‧絕緣體部之高度尺寸 hb‧‧‧側邊緣之Z軸方向之尺寸 hc‧‧‧Z軸方向之導體尺寸 hd‧‧‧環繞部Cn之內周部間之高度尺寸 L1‧‧‧膜層 L2‧‧‧電極層 L3‧‧‧電極層 L4‧‧‧電極層 L5‧‧‧電極層 L6‧‧‧電極層 L1001‧‧‧膜層 L1002‧‧‧電極層 L1003‧‧‧電極層 L1004‧‧‧電極層 L1005‧‧‧電極層 L1006‧‧‧電極層 La‧‧‧絕緣體部之長度尺寸 lb‧‧‧側邊緣之Y軸方向之尺寸 lc‧‧‧Y軸方向之導體尺寸 ld‧‧‧環繞部Cn之內周部間之長度尺寸 P‧‧‧研磨墊 P1‧‧‧開口部 P2‧‧‧開口部 P3‧‧‧開口部 R1‧‧‧抗蝕劑膜 R3‧‧‧抗蝕劑膜 S‧‧‧支持基板 S1‧‧‧接合面 S2‧‧‧接合面 S3‧‧‧接合面 S4‧‧‧接合面 Sa‧‧‧絕緣體部之面積 Sd‧‧‧環繞部Cn之內周部劃分之面積 SL1‧‧‧籽晶層 SL3‧‧‧籽晶層 V1‧‧‧通孔導體 V2‧‧‧通孔導體 V13‧‧‧通孔導體 V14‧‧‧通孔導體 V24‧‧‧通孔導體 V25‧‧‧通孔導體 V1001‧‧‧通孔導體 V1023‧‧‧連接用通孔導體層 V10231‧‧‧第1連接用通孔導體層 V10232‧‧‧第2連接用通孔導體層 V2023‧‧‧連接用通孔導體層 V20231‧‧‧第1連接用通孔導體層 V20232‧‧‧第2連接用通孔導體層 Wa‧‧‧絕緣體部之寬度尺寸 wb‧‧‧側邊緣之X軸方向之尺寸 wc‧‧‧X軸方向之導體尺寸 wd‧‧‧X軸方向之核心部尺寸 10‧‧‧Insulator Department 11‧‧‧Body Department 12‧‧‧top face 12A‧‧‧Resin film 20‧‧‧Internal Conductor 20L‧‧‧Coil Department 21‧‧‧Column conductor 22‧‧‧Connecting conductor 23‧‧‧Leading Department 24‧‧‧Comb tooth block 30‧‧‧External electrode 30A‧‧‧Part 1 30B‧‧‧Part 2 31‧‧‧First external electrode 32‧‧‧The second external electrode 100‧‧‧Electronic parts (coil parts) 101‧‧‧Top 102‧‧‧Bottom 103‧‧‧1st end face 104‧‧‧2nd end 105‧‧‧1st side 106‧‧‧2nd side 110‧‧‧Insulation 112‧‧‧Insulation 113‧‧‧Insulation 115‧‧‧Insulation 116‧‧‧Insulation 200‧‧‧coil parts 210‧‧‧Insulator Department 211‧‧‧Column conductor 212‧‧‧Column conductor 220C‧‧‧Coil Department 221‧‧‧Connecting conductor 222‧‧‧Connecting conductor 230‧‧‧External electrode 231‧‧‧ 1st Leading Department 232‧‧‧Second lead-out department 241‧‧‧The first comb block 242‧‧‧2nd comb block 301‧‧‧Conductor layer 302‧‧‧Conductor layer 1010‧‧‧Insulator Department 1011‧‧‧Body 1020‧‧‧Internal Conductor 1020L‧‧‧Coil Department 1021‧‧‧Column conductor 1022‧‧‧Connecting conductor 1030‧‧‧External electrode 1031‧‧‧First external electrode 1032‧‧‧The second external electrode 1100‧‧‧Electronic parts (coil parts) 1100A‧‧‧Electronic parts (coil parts) 1100B‧‧‧Electronic parts (coil parts) 1100C‧‧‧Electronic parts (coil parts) 1101‧‧‧Top 1102‧‧‧Bottom 1103‧‧‧1st end face 1104‧‧‧2nd end 1105‧‧‧1st side 1106‧‧‧2nd side 2010‧‧‧Insulator Department 2011‧‧‧Body Department 2012‧‧‧Bottom 2020‧‧‧Internal Conductor 2100‧‧‧Electronic parts (coil parts) 2101‧‧‧Top 2102‧‧‧Bottom 2103‧‧‧1st end face 2104‧‧‧2nd end face 2105‧‧‧1st side 2106‧‧‧2nd side 3010‧‧‧Insulator Department 3011‧‧‧Body 3040‧‧‧Dummy via conductor layer 3041‧‧‧Dummy via conductor layer 3042‧‧‧Dummy via conductor layer 3100‧‧‧Electronic parts (coil parts) 3101‧‧‧Top 3102‧‧‧Bottom 3103‧‧‧First face 3104‧‧‧2nd end 3105‧‧‧1st side 3106‧‧‧2nd side 4100‧‧‧Electronic parts (coil parts) 5100‧‧‧Electronic parts (coil parts) 7030‧‧‧External electrode 7100‧‧‧Electronic parts 10110‧‧‧Insulation 10112‧‧‧Insulation 10113‧‧‧Insulation 10114‧‧‧Insulation 10115‧‧‧Insulation 10211‧‧‧Column conductor 10212‧‧‧Column conductor 10221‧‧‧The first connecting conductor 10222‧‧‧The second connecting conductor Cn‧‧‧Encircling Department C1‧‧‧Encircling Department C2‧‧‧Encircling Department C3‧‧‧Encircling Department C4‧‧‧Encircling Department C5‧‧‧Encircling Department G‧‧‧Distance between conductors H‧‧‧Grinding head Ha‧‧‧ Height dimension of insulator hb‧‧‧The dimension of the Z axis direction of the side edge hc‧‧‧Conductor size in Z axis hd‧‧‧The height dimension of the inner part of the surrounding part Cn L1‧‧‧film L2‧‧‧electrode layer L3‧‧‧electrode layer L4‧‧‧electrode layer L5‧‧‧electrode layer L6‧‧‧electrode layer L1001‧‧‧film L1002‧‧‧electrode layer L1003‧‧‧electrode layer L1004‧‧‧electrode layer L1005‧‧‧electrode layer L1006‧‧‧electrode layer La‧‧‧Length of insulator lb‧‧‧Dimension of side edge in Y axis direction lc‧‧‧Conductor size in Y axis ld‧‧‧Length of the inner part of the surrounding part Cn P‧‧‧Abrasive pad P1‧‧‧ opening P2‧‧‧Opening P3‧‧‧Opening R1‧‧‧resist film R3‧‧‧resist film S‧‧‧Support substrate S1‧‧‧Joint surface S2‧‧‧Joint surface S3‧‧‧Joint surface S4‧‧‧Joint surface Sa‧‧‧Insulator area Sd‧‧‧The area demarcated by the inner part of the surrounding part Cn SL1‧‧‧Seed layer SL3‧‧‧Seed layer V1‧‧‧Through hole conductor V2‧‧‧Through hole conductor V13‧‧‧Through hole conductor V14‧‧‧Through hole conductor V24‧‧‧Through hole conductor V25‧‧‧Through hole conductor V1001‧‧‧Through hole conductor V1023‧‧‧via conductor layer for connection V10231‧‧‧First via conductor layer for connection V10232‧‧‧Second via conductor layer for connection V2023‧‧‧via conductor layer for connection V20231‧‧‧First via conductor layer for connection V20232‧‧‧Second via conductor layer for connection Wa‧‧‧Width of insulator wb‧‧‧Dimension of X-axis direction of side edge wc‧‧‧Conductor size in X axis wd‧‧‧Core dimension in X axis

圖1係本發明之一實施形態之電子零件之概略透視立體圖。圖2係上述電子零件之概略透視側視圖。圖3係上述電子零件之概略透視俯視圖。圖4係將上述電子零件之上下反轉而表示之概略透視側視圖。圖5A~F係構成上述電子零件之各電極層之概略俯視圖。圖6A~E係表示上述電子零件之基本製造流程之元件單位區域之概略剖視圖。圖7A~D係表示上述電子零件之基本製造流程之元件單位區域之概略剖視圖。圖8A~D係表示上述電子零件之基本製造流程之元件單位區域之概略剖視圖。圖9A~C係說明線圈零件之高頻特性之模式圖。圖10係上述電子零件之記載有各部之尺寸之概略側視圖。圖11係上述電子零件之記載有各部之尺寸之概略俯視圖。圖12A、B係表示本發明之另一實施形態之電子零件之第1構成例之概略透視立體圖及外觀立體圖。圖13A、B係圖12所示之電子零件之概略透視側視圖及外觀側視圖。圖14係圖12所示之電子零件之概略透視俯視圖。圖15係表示將圖12所示之電子零件之上下反轉而表示之概略透視側視圖。圖16A~F係構成圖12所示之電子零件之各電極層之概略俯視圖。圖17係表示上述電子零件之第2構成例之概略透視立體圖。圖18係圖17所示之電子零件之概略透視側視圖。圖19係圖17所示之電子零件之概略透視俯視圖。圖20係表示上述電子零件之第3構成例之概略透視立體圖。圖21係圖20所示之電子零件之概略透視側視圖。圖22係圖20所示之電子零件之概略透視俯視圖。圖23A~C係本發明之一實施形態及其變化例之電子零件之概略透視側視圖。圖24A~C係上述第1構成例之使側邊緣互不相同之電子零件之概略透視側視圖。圖25係表示圖23及圖24所示之各電子零件之電感(L值)特性之圖。圖26係表示圖23及圖24所示之各電子零件之Q值特性之圖。圖27A~D係根據本發明之實施形態之電子零件之構成之不同而比較內部導體部之可形成區域之圖。FIG. 1 is a schematic perspective perspective view of an electronic component according to an embodiment of the present invention. FIG. 2 is a schematic perspective side view of the above electronic component. FIG. 3 is a schematic perspective plan view of the above electronic component. FIG. 4 is a schematic perspective side view showing the electronic parts turned upside down. 5A to F are schematic plan views of electrode layers constituting the electronic component. 6A to 6E are schematic cross-sectional views showing the element unit area of the basic manufacturing process of the electronic component. 7A to D are schematic cross-sectional views showing the element unit area of the basic manufacturing process of the electronic component. 8A to D are schematic cross-sectional views of the element unit area showing the basic manufacturing process of the electronic component. 9A to C are schematic diagrams illustrating high-frequency characteristics of coil parts. Fig. 10 is a schematic side view of the electronic component in which dimensions of each part are described. FIG. 11 is a schematic plan view of the electronic component in which the dimensions of each part are recorded. 12A and 12B are schematic perspective perspective views and external perspective views showing a first configuration example of an electronic component according to another embodiment of the present invention. 13A and 13B are a schematic perspective side view and an external appearance side view of the electronic component shown in FIG. 14 is a schematic perspective top view of the electronic component shown in FIG. 15 is a schematic perspective side view showing the electronic parts shown in FIG. 12 turned upside down. 16A to 16F are schematic plan views of electrode layers constituting the electronic component shown in FIG. 12. FIG. 17 is a schematic perspective perspective view showing a second configuration example of the electronic component. 18 is a schematic perspective side view of the electronic component shown in FIG. FIG. 19 is a schematic perspective top view of the electronic component shown in FIG. 17. FIG. 20 is a schematic perspective perspective view showing a third configuration example of the electronic component. 21 is a schematic perspective side view of the electronic component shown in FIG. 22 is a schematic perspective top view of the electronic component shown in FIG. 23A to 23C are schematic perspective side views of electronic components according to an embodiment of the present invention and its modifications. 24A to 24C are schematic perspective side views of electronic parts having side edges different from each other in the first configuration example. FIG. 25 is a graph showing the inductance (L value) characteristics of each electronic component shown in FIGS. 23 and 24. Fig. 26 is a graph showing the Q value characteristics of the electronic components shown in Figs. 23 and 24; FIGS. 27A to D are diagrams for comparing the formation area of the internal conductor portion according to the configuration of the electronic component according to the embodiment of the present invention.

10‧‧‧絕緣體部 10‧‧‧Insulator Department

30‧‧‧外部電極 30‧‧‧External electrode

100‧‧‧電子零件(線圈零件) 100‧‧‧Electronic parts (coil parts)

Cn‧‧‧環繞部 Cn‧‧‧Encircling Department

Ha‧‧‧絕緣體部之高度尺寸 Ha‧‧‧ Height dimension of insulator

hb‧‧‧側邊緣之Z軸方向之尺寸 hb‧‧‧The dimension of the Z axis direction of the side edge

hc‧‧‧Z軸方向之導體尺寸 hc‧‧‧Conductor size in Z axis

hd‧‧‧環繞部Cn之內周部間之高度尺寸 hd‧‧‧The height dimension of the inner part of the surrounding part Cn

La‧‧‧絕緣體部之長度尺寸 La‧‧‧Length of insulator

lb‧‧‧側邊緣之Y軸方向之尺寸 lb‧‧‧Dimension of side edge in Y axis direction

lc‧‧‧Y軸方向之導體尺寸 lc‧‧‧Conductor size in Y axis

ld‧‧‧環繞部Cn之內周部間之長度尺寸 ld‧‧‧Length of the inner part of the surrounding part Cn

Claims (13)

一種線圈零件,其具備:絕緣體部,其於第1軸方向上具有寬度方向,於第2軸方向上具有長度方向,於第3軸方向上具有高度方向,且由非磁性材料構成;及線圈部,其具有繞上述第1軸方向捲繞之環繞部,且配置於上述絕緣體部之內部;上述絕緣體部之長度尺寸較寬度尺寸及高度尺寸長,上述絕緣體部之長度尺寸為410μm以下,上述絕緣體部之高度尺寸相對於長度尺寸之比率,係沿上述第3軸方向之上述環繞部之內周部間之高度尺寸相對於沿上述第2軸方向之上述環繞部之內周部間之長度尺寸之比率的1.5倍以下,自上述第1軸方向觀察時由上述環繞部之內周部劃分之面積相對於上述絕緣體部之面積之比率為0.22以上且0.65以下。 A coil component comprising: an insulator portion having a width direction in a first axis direction, a length direction in a second axis direction, and a height direction in a third axis direction, and being composed of a non-magnetic material; and a coil The portion has a surrounding portion wound around the first axis direction, and is disposed inside the insulator portion; the length dimension of the insulator portion is longer than the width dimension and the height dimension, and the length dimension of the insulator portion is 410 μm or less, The ratio of the height dimension of the insulator portion to the length dimension is the height dimension between the inner peripheral portions of the surrounding portion along the third axis direction relative to the length between the inner peripheral portions of the surrounding portion along the second axis direction The ratio of the size is 1.5 times or less, and the ratio of the area divided by the inner peripheral portion of the surrounding portion to the area of the insulator portion when viewed from the first axis direction is 0.22 or more and 0.65 or less. 如請求項1之線圈零件,其中沿上述第3軸方向之上述環繞部之內周部間之高度尺寸相對於沿上述第2軸方向之上述環繞部之內周部間之長度尺寸的比率為0.6以上且1.0以下。 The coil component according to claim 1, wherein the ratio of the height dimension between the inner peripheral portions of the surrounding portion along the third axis direction to the length dimension between the inner peripheral portions of the surrounding portion along the second axis direction is 0.6 or more and 1.0 or less. 如請求項1或2之線圈零件,其中自上述第1軸方向觀察時由上述環繞部之內周部劃分之面積相對於上述絕緣體部之面積之比率為0.22以上且0.45以下。 The coil component according to claim 1 or 2, wherein the ratio of the area divided by the inner peripheral portion of the surrounding portion to the area of the insulator portion when viewed from the first axis direction is 0.22 or more and 0.45 or less. 如請求項1或2之線圈零件,其中上述絕緣體部係由陶瓷或樹脂材料構成。 The coil component according to claim 1 or 2, wherein the insulator portion is made of ceramic or resin material. 如請求項1之線圈零件,其中上述絕緣體部係由陶瓷或樹脂材料構成。 The coil component according to claim 1, wherein the insulator portion is made of ceramic or resin material. 如請求項1或2之線圈零件,其中上述絕緣體部具有長方體形狀,上述線圈零件進而具備外部電極,其與上述線圈部電性連接,且僅配置於上述絕緣體部之1面。 The coil component according to claim 1 or 2, wherein the insulator portion has a rectangular parallelepiped shape, and the coil component further includes an external electrode that is electrically connected to the coil portion and is disposed only on one side of the insulator portion. 如請求項6之線圈零件,其中上述線圈部與上述外部電極係藉由與上述線圈部之端部連接之連接用通孔導體而電性連接。 The coil component according to claim 6, wherein the coil portion and the external electrode are electrically connected by a through-hole conductor connected to an end of the coil portion. 如請求項7之線圈零件,其中上述通孔導體之與上述第3軸正交之剖面具有較上述線圈部之端部之與上述第3軸正交之剖面大的剖面形狀。 The coil component according to claim 7, wherein the cross section of the through-hole conductor orthogonal to the third axis has a larger cross-sectional shape than the cross section orthogonal to the third axis of the end of the coil portion. 如請求項6之線圈零件,其中上述外部電極具有與上述絕緣體部之上述1面對向之內表面部、及設置於上述內表面部且沒入上述1面之複數個突起部。 The coil component according to claim 6, wherein the external electrode has an inner surface portion facing the one surface of the insulator portion, and a plurality of protrusions provided on the inner surface portion and submerged into the one surface. 如請求項5之線圈零件,其中上述絕緣體部具有長方體形狀,上述線圈零件進而具備外部電極,其與上述線圈部電性連接,且僅配置於上述絕緣體部之1面。 The coil component according to claim 5, wherein the insulator portion has a rectangular parallelepiped shape, and the coil component further includes an external electrode which is electrically connected to the coil portion and is arranged only on one surface of the insulator portion. 如請求項10之線圈零件,其中上述線圈部與上述外部電極係藉由與上述線圈部之端部連接之連接用通孔導體而電性連接。 The coil component according to claim 10, wherein the coil portion and the external electrode are electrically connected by a through-hole conductor connected to an end of the coil portion. 如請求項11之線圈零件,其中上述通孔導體之與上述第3軸正交之剖面具有較上述線圈部之端部之與上述第3軸正交之剖面大的剖面形狀。 The coil component according to claim 11, wherein the cross section of the through-hole conductor orthogonal to the third axis has a larger cross-sectional shape than the cross section orthogonal to the third axis of the end of the coil portion. 如請求項10之線圈零件,其中上述外部電極具有與上述絕緣體部之上述1面對向之內表面部、及設置於上述內表面部且沒入上述1面之複數個突起部。 The coil component according to claim 10, wherein the external electrode has an inner surface portion facing the one face of the insulator portion, and a plurality of protrusions provided on the inner surface portion and submerged in the one face.
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