TWI692052B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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TWI692052B
TWI692052B TW106135530A TW106135530A TWI692052B TW I692052 B TWI692052 B TW I692052B TW 106135530 A TW106135530 A TW 106135530A TW 106135530 A TW106135530 A TW 106135530A TW I692052 B TWI692052 B TW I692052B
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substrate
spacer
satellite device
trolley
transfer
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TW106135530A
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TW201820512A (zh
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張旭相
朴相俊
李昊榮
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南韓商圓益Ｉｐｓ股份有限公司
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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  • General Chemical & Material Sciences (AREA)
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  • Metallurgy (AREA)
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  • Organic Chemistry (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

本發明涉及一種用於在基板上形成薄膜的基板處理裝置和基板處理方法，包括：腔室；基座，設置在腔室內，並可以進行旋轉；至少一個衛星裝置，設置於基座上，並設置有基板，依靠通過基座而供給的氣體的壓力漂浮並旋轉，同時使基板自轉，並且還依靠基座的旋轉而可進行公轉；小車升降模組，包括設置於衛星裝置周圍的基座並支撐基板周邊的小車、以及能將小車升降的小車升降裝置，所述小車依靠該小車升降裝置進行升降，並且將基板從用於將基板擱置在衛星裝置上的隔離片處接收並安置在衛星裝置上，或者從衛星裝置將基板接收而擱置在隔離片上。

Description

基板處理裝置及基板處理方法
本發明涉及一種基板處理裝置和基板處理方法，具體而言，涉及一種用於在基板上沉積薄膜的基板處理裝置和基板處理方法。
一般而言，半導體中所使用的薄膜製造方法有化學氣相沉積(CVD,Chemical Vapor Deposition)法和物理氣相沉積(PVD,Physical Vapor Deposition)法。化學氣相沉積法是將氣體狀態的混合物在加熱的基板表面進行化學反應，並將生成物沉積在基板表面的技術。化學氣相沉積法基於被使用為前身(precursor)的物質種類、製程中的壓力、反應中所需的必要的能量傳遞方式等，可以分為大氣化學氣相沉積法(APCVD，Atmospheric CVD)、低壓化學氣相沉積(LPCVD，Low Pressure CVD)法、電漿輔助化學氣相沉積(PECVD，Plasma Enhanced CVD)法、有機金屬化學氣相沉積(MOCVD，Metal Organic CVD)法。
在這之中，有機金屬化學氣相沉積方法，為了發光二極體用氮化物半導體等的單結晶生成而被廣泛使用。有機金屬化學氣相沉積方法將液體狀態的原料的有機金屬化合物氣化變成氣體狀態，之後將氣化的源氣體供給至沉積對象的基板，使其接觸到高溫的基板，將金屬薄膜沉積在基板上。
利用有機金屬化學氣相沉積方法為了提高產能，要求將多個基板一同供給至腔室內，使製程進行處理。腔室內基座的結構使各基板沿著中心周圍而安置。並且，依靠衛星(satellite)裝置的旋轉，各個基板旋轉，並且基座也旋轉，使薄膜均勻地沉積在各個基板的上面。即，各個基板一邊進行著共振和自振運動，薄膜均勻地沉積於各基板上面。
另外，要進行處理的基板安裝於基座，完成處理的基板從基座處卸載。如果依靠運送機器人自動化地將基板安裝和卸載，在進行基板的安裝和卸載時，需要將基板升降。但是如之前所述，基座和衛星裝置旋 轉，因此將用於升降基板的升降銷等機構設置於安置基板的各個部分上是不容易的。因此，從業人員用手動的方式去安裝和卸載基板是十分普遍的。因此，需要要求熟練的從業人員，但由於手動作業會存在作業效率低下的問題。
本發明旨在解決包括上述問題的許多問題，並且其目的在於提供一種基板處理裝置和基板處理方法，其可以自動化地進行基板的安裝和卸載，通過將小車設置在腔室的內部，可使設備達到最佳。由此，可以大幅提高作業的效率。但是針對這樣的問題只是示例性地展示，本發明的範圍並不受其限定和侷限。
基於用於解決上述問題的本發明的思想的基板處理裝置，可包括：腔室；基座，設置在上述腔室內，並可以進行旋轉；至少一個衛星裝置，設置於所述基座上，並設置有基板，依靠通過所述基座而供給的氣體的壓力漂浮並旋轉，同時使所述基板自轉，並且還依靠所述基座的旋轉而可進行公轉；小車升降模組，包括設置於所述衛星裝置周圍的所述基座並支撐所述基板周邊的小車、以及能將小車升降的小車升降裝置，所述小車依靠所述小車升降裝置而進行升降，並且將所述基板從用於將所述基板擱置在所述衛星裝置上的隔離片處接收並安置在所述衛星裝置上，或者從所述衛星裝置將所述基板接收而擱置在所述隔離片上。
並且，根據本發明，所述基板是半導體元件用晶圓，所述小車在其上方形成收容槽，用於支撐晶圓周圍，與所述衛星裝置的上面相對應的形狀的貫通窗可以形成是圓環形狀。
並且，根據本發明，所述小車升降裝置可包含：多個提升銷，設置於所述小車的下面；銷板，設置於所述提升銷下部用於支撐所述提升銷；以及提升銷升降裝置，升降所述銷板。
並且，根據本發明，所述基座是圓形桌台形態，至少一個所述衛星裝置可以包括多個衛星裝置，其以所述基座的中心為基準，在所述基座上沿圓周方向配置。
並且，根據本發明，所述衛星裝置的上面高度可以比下降後的所述小車的基板支持面的高度高。
並且，本發明的基板處理系統可包括：第一轉移腔室，設置有隔離片移送機器人，與所述腔室相連接，以將所述隔離片移送至所述衛星裝置上。
並且，本發明的基板處理系統可包括：第二轉移腔室，設置有基板移送機器人，與所述腔室相連接，將所述基板移送至所述衛星裝置上安裝的所述隔離片上。
並且，根據本發明，所述隔離片移送機器人和所述基板移送機器人是在同一旋動軸上分別設置的移送機器臂，所述第一轉移腔室和所述第二轉移腔室可以是相互統合後形態的統合轉移腔室。
並且，基於本發明，所述隔離片可保管於統合轉移腔室內的所述隔離片移送機器人上。
另外，用於解決上述問題的本發明思想的基板處理方法，利用上述基板處理系統，可包括：隔離片安裝步驟，將所述隔離片安裝至所述腔室的所述衛星裝置上；基板安裝步驟，將所述基板安裝至所述隔離片上；小車提升步驟，將所述小車提升，使所述基板從所述隔離片上被接收；隔離片卸載步驟，將所述隔離片從所述衛星裝置上卸載；以及小車下降步驟，將所述小車下降，使接收來的所述基板安置於衛星裝置上。
並且，根據本發明，所述隔離片安裝步驟利用轉移腔室內設置的隔離片移送機器人，將所述隔離片提起並移送後，可再將其下放至所述衛星裝置上。
並且，根據本發明，所述基板安裝步驟利用轉移腔室內設置的隔離片移送機器人，可將比所述隔離片更大的所述基板提起並移送後，再將其下放至所述隔離片上，以使所述隔離片可位於所述基板的中間部分。
並且，根據本發明，所述小車提升步驟利用可以擱置在所述基板周邊部分的所述小車，將所述基板從所述隔離片處分離並提升。
並且，根據本發明，所述隔離片卸載步驟利用設置在轉移腔室的隔離片移送機器人，將所述隔離片從所述衛星裝置處提起並提升，並移送至所述轉移腔室。
並且，本發明的基板處理方法可包括：基板自轉步驟，將所述衛星裝置旋轉，使所述基板自轉；基板公轉步驟，將所述基座旋轉，所述衛星裝置沿著圓形軌道旋轉使所述基板進行公轉。
並且，本發明的基板處理方法可包括：小車提升步驟，將支撐所述基板的小車提升，使將安置於所述衛星裝置的所述基板可從所述衛星裝置分離；隔離片安裝步驟，將所述隔離片移送至所述衛星裝置和所述基板之間，將所述隔離片安裝至所述衛星裝置；小車下降步驟，將所述小車下降，使所述基板可以安置於所述隔離片；基板卸載步驟，將所述基板從所述隔離片接收並將所述基板移送至轉移腔室；以及隔離片卸載步驟，將所述隔離片從所述衛星裝置卸載至所述轉移腔室。
根據如上所述構成本發明的一部分實施例，利用隔離片可將基板的安裝和卸載作業自動化，通過將小車設置在腔室的內部，可使設備達到最佳。即使沒有熟練操作的從業人員也可以輕鬆進行基板的安裝和卸載。由此，可以大幅提高作業的效率。當然，這樣的效果並不限定本發明的範圍。
1‧‧‧基板
10‧‧‧腔室
20‧‧‧基座
20a‧‧‧衛星裝置對應面
30‧‧‧衛星裝置
30a‧‧‧隔離片收容面
40‧‧‧小車升降模組
41‧‧‧小車
42‧‧‧小車升降裝置
421‧‧‧提升銷
422‧‧‧提升銷升降裝置
423‧‧‧銷板
50‧‧‧轉移腔室
60‧‧‧加工裝置
90‧‧‧基板處理裝置
100‧‧‧基板處理系統
AH‧‧‧氣孔
H‧‧‧收容槽
H1‧‧‧衛星裝置的上面高度
H2‧‧‧基板支持面的高度
R‧‧‧旋動軸
R1‧‧‧隔離片移送機器人
R2‧‧‧基板移送機器人
S‧‧‧隔離片
S1‧‧‧隔離片安裝步驟
S2‧‧‧基板安裝步驟
S3‧‧‧小車提升步驟
S4‧‧‧隔離片卸載步驟
S5‧‧‧小車下降步驟
S6‧‧‧基板自轉步驟
S7‧‧‧基板公轉步驟
S8‧‧‧基板加工步驟
S9‧‧‧小車提升步驟
S10‧‧‧隔離片安裝步驟
S11‧‧‧小車下降步驟
S12‧‧‧基板卸載步驟
S13‧‧‧隔離片卸載步驟
W‧‧‧貫通窗
圖1是顯示本發明一部分實施例的基板處理裝置和基板處理系統的示意圖；圖2是顯示圖1的基板處理裝置和基板處理系統的一部分立體圖；圖3是顯示圖1的基板處理裝置和基板處理系統的衛星的截面圖；圖4是顯示圖1的基板處理裝置和基板處理系統的基座的平面圖；圖5至圖11是顯示利用圖1的基板處理裝置和基板處理系統的基板處理過程的各個截面圖；圖12是顯示本發明一部分實施例的基板處理方法的順序圖；以及圖13是顯示本發明一部分其他實施例的基板處理方法的順序圖。
以下，參照附圖對本發明的各個較佳實施例進行詳細地說明。
本發明的各個實施例是針對本技術領域具有通常知識的從業人員進行詳細說明而提供，並且下文的實施例可以進行多種形態的變化， 但本發明的範圍並不侷限於下文實施例。反而這些實施例更加充實並完整地補充揭露的內容，是為了向本領域技術人員傳達本發明技術思想而設置。並且，在附圖中各個層的厚度或是大小是為了說明的便利性和明確性而進行了誇張顯示。
以下，本發明的實施例參照概略性顯示本發明理想實施例的附圖而進行的詳細的說明。例如，製造技術以及/或是公差(tolerance)而可以對顯示的形狀的變化進行預測。因此在分析本發明思想的實施例時不能侷限於說明書中所顯示領域的特定形狀，例如包括在製造上可能導致的形狀的變化。
本發明的各個實施例中，基板處理裝置可以稱作為用於處理基板的腔室和其附屬物的意思，也可以稱之為製程腔室或者製程裝置等。另外，基板處理系統包括這樣的基板處理裝置的系統，例如可以稱為群系統。例如，基板處理系統還可以包括連接這樣基板處理裝置的轉移腔室以及其附屬物。再進一步說，基板處理系統還可以包括除此之外負載鎖定腔室和其附屬物，或者基板排列腔室及其附屬物等一個或者除此之外的腔室和其附屬物。
圖1是顯示本發明一部分實施例的基板處理裝置90以及基板處理系統100的示意圖。圖2是顯示圖1的基板處理裝置和基板處理系統100的一部分的立體圖。圖3是顯示圖1的基板處理裝置和基板處理系統100的衛星裝置30的截面圖。圖4是顯示圖1的基板處理裝置和基板處理系統100的基座20的平面圖。
首先，如圖1至圖4內容所示，本發明的一部分實施例的基板處理裝置90可包括：腔室10；基座20；衛星裝置30；小車升降模組40；以及加工裝置60。
在本文中，例如，基板處理裝置90可以是將多個基板在腔室10內進行處理的裝置。例如，基板處理系統100可以是利用有機金屬化學氣相沉積法，將薄膜沉積在基板1上的薄膜沉積裝置。但是並不侷限與此，還可以在基板1上適用執行多種製程的基板處理裝置。
例如，如圖1至圖4所示，腔室10是作為可以執行沉積製程等各種製程而具有內部空間的結構，在一側形成有通道口(gate)，使製程處理用基板1或者各種機器人的末端效應器(end effector)可以進出，並 且可以設置用於加工供給部等基板的加工裝置60，所述供給部等基板用於向內部空間供給源氣體或者反應氣體等製程氣體的氣體。比如，加工裝置60可以具有用於向基板1上均勻噴射氣體的噴頭結構。
在本文中，基板1可以是半導體元件用晶圓。
並且，例如，基座20作為設置在腔室10內的結構，其可以設置為具有一種大轉盤形態的結構，使基板1可以進行公轉且可以旋轉。
並且，例如，衛星裝置30作為設置在基座20上的結構，依靠安裝有基板1且通過基座20供給的氣體的壓力漂浮並旋轉，使基板1進行自轉，同時依靠基座20的旋轉而可以進行公轉。衛星裝置30至少一個，例如可在基座20上以一定間隔而設置多個。
具體來看，衛星裝置30可以是依靠沿著通過氣孔(AH)而在衛星裝置對應面20a處形成的漩渦形態的槽以漩渦形態排出惰性氣體的氣體壓力而漂浮並旋轉的一種小的多個轉盤形態，從而使基板1進行自轉。通過適用這樣的氣體漂浮方式的衛星裝置30，可將基座20的結構更加單純化，可以將基板1或者各個部件之間的摩擦最小化。
在利用這樣的氣體漂浮方式的衛星裝置30時，利用其它貫通衛星裝置30的提升銷，如果將基板移交，用於將衛星裝置30旋轉的氣體壓力就會洩漏，衛星裝置30的旋轉會產生問題。根據本發明一實施例，為了解決這樣的問題，利用設置在衛星裝置30周邊的小車41，可將基板1進行升降，並不與衛星裝置30相干涉。
額外地，為了使將基板1移交給小車41或者從小車41將基板1接收的步驟更加效率化，可以在小車41的升降路徑上臨時導入可以擱置基板1的隔離片S。例如，臨時將隔離片S擱置在衛星裝置30上，將基板擱置在這樣的隔離片S上之後，升降小車41，基板1可從隔離片S上轉移至小車41上。為此，隔離片S需要平面地配置在衛星裝置30內，使其不與小車41干涉，比如可以比基板1的平面上的面積更小。
再具體舉一例，如圖2和圖3內容所示，衛星裝置30作為在上面形成隔離片收容面30a的結構，用於支撐並旋轉基板1，如圖3所示，衛星裝置30的上面高度H1可以比下降完成的小車41的基板支持面高度H2更高。
並且，如圖4所示，基座20是圓形桌子的形態，衛星裝置30以基座20的中心為基準，可在基座20上沿圓周方向設置多個。比如，衛星裝置30以基座20的旋轉中心為基準在基座20上等角配置有多個。
這樣，基座20和衛星裝置30的形狀是為了進行大量生產，而將更多基板1進行一次性地處理。
因此，基板1依靠衛星裝置30而進行自轉的同時，依靠基座20也可以以基座20的旋轉中心而進行公轉，由此，可以在多個基板1上沉積均勻的薄膜。
另外，如圖1至圖4所示，小車升降模組40包括小車41，設置於衛星裝置30周圍的基座20上，並支撐基板1的周圍，將基板1接收並安置在衛星裝置30上；以及小車升降裝置，將小車41升降並使基板1升降。小車41依靠小車升降裝置42而進行升降，從用於將基板1臨時擱置在衛星裝置30上的隔離片S處接收基板並安置在衛星裝置30上或者從衛星裝置30處接收基板1並擱置在隔離片S上。
再具體而言，例如圖2和圖3的內容所示，小車41上形成有收容槽H，用於支撐所述晶圓的周邊，並且小車41可以是形成為具有與衛星裝置30的上面相對應形狀的圓環形狀貫通窗W。
在本文中，再具體舉一例，小車41作為在下降時可以將基座20的上面一部分蓋住並在提升時可以支撐所述晶圓的周邊的結構，例如引導基板1的升降路徑及旋轉路徑是當然的，執行控制從基座20的熱傳遞並將加至基板1的熱衝擊減小，或者進行均勻的預熱，或者幫助形成電磁場等多種作用和功能。
為此，小車41的部分的或者全體的材質可以是陶瓷類或者金屬材質，又或者其他石英、石墨(graphite)、碳化矽等多種材質。
並且，具體再舉一例，如圖2和圖3內容所示，小車升降裝置42可包括：設置於小車41下面的提升銷421；以及提升提升銷421的馬達或者氣缸等的提升銷升降裝置422。
在本文中，提升銷421作為在小車41下面至少設置一個的裝置，為了分散負重，比如可以設置三個或者四個。並且，例如，提升銷421的部分或者全部的材質可以由陶瓷或者金屬材質或者其他石英、石墨(graphite)、碳化矽等多種材質製成，用於把從基座20的熱傳遞阻斷。
例如，銷板423用於在多個提升銷421下部支撐提升銷421。在此情形，提升銷升降裝置422將銷板423升降的同時將多個提升銷421升降。因此，這樣的提升銷升降裝置422並不侷限於附圖，可以與多種形態的連接銷相連接的多種升降裝置都可以被使用。
另外，如圖1所示，本發明一部分實施例的基板處理系統100作為將上述基板處理裝置90進行系統化的裝置，還可以包括基板處理裝置90的隔離片S。具體而言，基板處理系統100還可以包括第一轉移腔室或第二轉移腔室，所述第一轉移腔室與腔室10連接並設置有隔離片移送機器人R1，用於將在衛星裝置30上的基板1轉移至小車41上的隔離片S移送；所述第二轉移腔室與腔室10連接並設置有基板移送機器人R2，用於將基板1移送至衛星裝置30上安置的隔離片S上。
再具體舉一例，如圖1所示，隔離片移送機器人R1和基板移送機器人R2是分別設置於同一旋動軸R的移送機器臂，所述第一轉移腔室和所述第二轉移腔室是相互統合的形態，可以是一個統合的轉移腔室50。由此，為了保管隔離片S就不再需要設置額外的轉移腔室和旋動軸，可以使裝置更加簡化。
但在這實施例的變化例中，第一轉移腔室和第二轉移腔室分別設置，基板移送機器人R1和基板移送機器人R2也各自設置於不同的旋動軸。
在這個實施例中，隔離片S位於衛星裝置30上，在將基板1轉移至衛星裝置30上的期間或者將基板1從衛星裝置30接收的期間，用於臨時將基板1擱置。例如，隔離片S具有基板1臨時擱置的基板擱置面，其可以具有多種形狀，進一步說，可以具有多種形狀的機器人擱置面，從而通過隔離片移送機器人R1而進行移動。
例如，隔離片S可以包括：垂直框架，整體上沿垂直方向形成，用於以一定的高度臨時支撐基板1；水平框架，沿水平方向延伸，與隔離片移送機器人R1的機器臂相接觸並可以被提起。例如，垂直框架可以由至少一個腿部、圓形管、橢圓形管、三角管、四角管、多角管、十字形框架、S型框架、8字型框架以及這些組合成的形狀中選擇至少某一個而構成。並且，水平框架其內部具有至少一個貫通管，整體上由圓環框架、橢圓環 框架、三角環框架、多角環框架、十字型框架、S型框架、8型框架以及由這些組合成的形狀中選擇至少某一個而組成。
因此，如圖1所示，利用在統合的轉移腔室50設置的隔離片移送機器人R1和基板移送機器人R2，可以將隔離片S以及基板1安裝和卸載於腔室10的內部。
圖5至圖11是顯示利用圖1的基板處理裝置100的基板處理過程的截面圖。
如圖1至圖11所示，如對利用前述基板處理裝置的基板處理過程進行說明，首先，如圖5所示，可以將隔離片S安裝於腔室10的衛星裝置30上。
這時，可以利用隔離片移送機器人R1，將隔離片S從統合的轉移腔室50提升並移送至腔室10後，再放置衛星裝置30上。
接下來，如圖6所示，可以將基板1安裝在衛星裝置30安置的隔離片S上。
這時，利用基板移送機器人R2，將基板1移送至腔室10後，再放置在隔離片S上，從而可以將比隔離片S更大尺寸的基板1從統合的轉移腔室50提起，使隔離片S位於基板1的中間部分。
這裡，如圖7所示，可以將小車41提升，使基板1從隔離片S處接收。這時，利用可以擱置基板1周邊部分的小車41，可以將基板1從隔離片S分離並提升。接著，可以將隔離片S從衛星裝置30卸載。這時，利用隔離片移送機器人R1將隔離片S從衛星裝置30處提起，移送至轉移腔室10。
接著，如圖8所示，可以升降小車41，使接收的基板1安置於衛星裝置30上。
這時，如圖3所示，衛星裝置30的上面高度H1比完成下降的小車41的基板支持面高度H2，因此衛星裝置30可以將基板1接收並旋轉。
接著，將衛星裝置30旋轉，並且使基板1自轉。將基座20旋轉，衛星裝置30沿著圓形的軌道旋轉的同時，可以使基板1公轉。
這時，如圖5至圖8所示，將基板1安裝至腔室10的內部之後，雖然圖未顯示，但根據如上所述，利用加工裝置60供給各種氣體，使薄膜可以均勻地形成於自轉和公轉的基板1上。
接著，如圖9至圖11所示，可以將完成加工的基板1卸載至腔室10的外部。
即，如圖9所示，可以將支撐基板1的小車41提升，使在衛星裝置30安置的基板1從衛星裝置30處分離。
接著，將隔離片S移送至衛星裝置30與基板1之間，並將隔離片S安裝至衛星裝置30。
接著，如圖10所述，可以將小車41下降，使基板1安裝至隔離片S。接著，將基板1從隔離片S處接收，並將基板1卸載至轉移腔室50。
接著，如圖11所述，可以將隔離片S從衛星裝置30卸載至轉移腔室50。
因此，根據如上所述的內容，利用隔離片S可將基板1的安裝和卸載變成自動化，通過將小車41內設於腔室10的內部，使設備達到最佳化，因此即使沒有熟練操作的從業人員，也可以將基板進行安裝和卸載，由此可以大幅提升作業效率。
圖12是顯示本發明一部分實施例的基板處理方法的順序圖。
如圖1至圖12所述，基於本發明一部分實施例的基板處理方法可以包括：隔離片安裝步驟S1，將隔離片S安裝於腔室10的衛星裝置30上；基板安裝步驟S2，將基板1安裝至隔離片S上；小車提升步驟S3，將小車41提升從而使基板1從隔離片S處接收；隔離片卸載步驟S4，將隔離片S從衛星裝置30卸載；小車下降步驟，將小車41下降，從而使接收的基板1安置於衛星裝置30上。
例如，如圖5所示，所述隔離片安裝步驟S1利用隔離片移送機器人R1將隔離片S提升並移送後，放置於衛星裝置30上。
並且，例如，如圖6所示，所述基板安裝步驟S2利用基板移送機器人R2，將比隔離片S更大尺寸的基板1提起，並使隔離片S位於基板1的中間部分，將基板1移送後，再放置於隔離片S上。
並且，例如，小車提升步驟S3利用將基板1的邊緣部分擱置的小車41，可以將基板1從隔離片S分離並提升。
並且，例如，如圖7所示，所述隔離片卸載步驟S4，利用隔離片移送機器人R1將隔離片S從衛星裝置30提升，並移送至轉移腔室10。
並且，例如，如圖8內容所示，本發明的一部分實施例的基板處理方法還包括：將衛星裝置30旋轉並使基板1自轉的基板自轉步驟S6；以及將基座20旋轉，並且衛星裝置30沿著圓形軌道旋轉的同時使基板1進行公轉的基板公轉步驟S7。
圖13是顯示本發明一部分實施例的基板處理方法的順序圖。
如圖1至圖13所示，基於本發明一部分實施例的基板處理方法還可以包括：隔離片安裝步驟S1，將隔離片S安裝至腔室10的衛星裝置30上；基板安裝步驟S2，將基板1安裝至隔離片S上；小車提升步驟S3，將小車41提升，用於將基板1從隔離片S處接收；隔離片卸載步驟S4，將衛星裝置30從衛星裝置30處卸載；小車下降步驟S5，將小車41下降，用於將接收的基板1安置於衛星裝置30；基板自轉步驟S6，將衛星裝置30旋轉並使基板1進行自轉；基板公轉步驟S7，將基座20旋轉，衛星裝置30沿圓形軌道旋轉的同時使基板1公轉；基板加工步驟S8，使基板1進行自轉和公轉的同時，供給氣體形成薄膜；小車提升步驟S9，將基板1支撐的小車41提升，使在衛星裝置30安置的基板1從衛星裝置30處分離；隔離片安裝步驟S10，將隔離片S移送至衛星裝置30與基板1之間，並將隔離片S安裝至衛星裝置30上；小車下降步驟S11，將小車41下降，使基板1安置在隔離片上；基板卸載步驟S12，將基板1從隔離片S處接收並將基板1移送至轉移腔室50；以及隔離片卸載步驟S13，將隔離片S從衛星裝置30卸載至轉移腔室50。
在本文中，所述基板自轉步驟S6和所述基板公轉步驟S7作為順序上無關緊要的執行步驟，兩者中任意一個步驟先執行或者同時執行也都可以。
因此，如上所述，利用隔離片S，可將基板1的安裝和卸載作業自動化進行，並且通過將小車41內設於腔室10的內部，使設備達到 最佳化，即使沒有熟練操作的從業人員，也可以進行基板的安裝和卸載，由此可以大幅提升作業的效率。
本發明參照顯示的實施例進行了說明，但這不過是示例性的，對於相應領域具有通常知識的從業人員來說，可以對此進行多種改變化以及均等的實施例替換。因此，本發明真正要保護的技術範圍應該通過下文的申請專利範圍的技術思想來定義。
1‧‧‧基板
10‧‧‧腔室
20‧‧‧基座
30‧‧‧衛星裝置
40‧‧‧小車升降模組
41‧‧‧小車
50‧‧‧轉移腔室
60‧‧‧加工裝置
90‧‧‧基板處理裝置
100‧‧‧基板處理系統
R‧‧‧旋動軸
R1‧‧‧隔離片移送機器人
R2‧‧‧基板移送機器人
S‧‧‧隔離片

Claims (9)

  1. 一種基板處理系統，包括：一腔室；一基座，設置在所述腔室內，並可以進行旋轉；至少一個衛星裝置，設置於所述基座上，並設置有一基板，依靠通過所述基座而供給的氣體的壓力漂浮並旋轉，同時使所述基板自轉，並且還依靠所述基座的旋轉而可進行公轉；一隔離片，位於所述衛星裝置上，將所述基板轉移至所述衛星裝置上的期間或者將基板從所述衛星裝置接收的期間，用於臨時擱置所述基板；一小車升降模組，包括設置於所述衛星裝置周圍的所述基座並支撐所述基板周邊的小車、以及能將所述小車升降的一小車升降裝置，所述小車依靠所述小車升降裝置而進行升降，並且將所述基板從用於將所述基板擱置在所述衛星裝置上的所述隔離片處接收並安置在所述衛星裝置上，或者從所述衛星裝置將所述基板接收而擱置在所述隔離片上；一轉移腔室，與所述腔室相連接；一隔離片移送機器人，設置於所述轉移腔室內部，並將所述隔離片移送至所述衛星裝置上；以及一基板移送機器人，將所述基板移送至所述隔離片上，其中，所述隔離片移送機器人和所述基板移送機器人分別設置在同一旋動軸，所述隔離片移送機器人和所述基板移送機器人分別運轉。
  2. 如申請專利範圍第1項所述的基板處理系統，其中，所述隔離片在所述轉移腔室內的所述隔離片移送機器人上被保管。
  3. 一種利用如申請專利範圍第1項所述的基板處理系統的基板處理方法，包括：隔離片安裝步驟，將所述隔離片安裝至所述腔室的所述衛星裝置上；基板安裝步驟，將所述基板安裝至所述隔離片上；小車提升步驟，將所述小車提升，使所述基板從所述隔離片上被接收；隔離片卸載步驟，將所述隔離片從所述衛星裝置上卸載；以及 小車下降步驟，將所述小車下降，使接收來的所述基板安置於所述衛星裝置上。
  4. 如申請專利範圍第3項所述的基板處理方法，其中，所述隔離片安裝步驟利用所述轉移腔室內設置的所述隔離片移送機器人，將所述隔離片提起而移送後，可再放置於所述衛星裝置上。
  5. 如申請專利範圍第3項所述的基板處理方法，其中，所述基板安裝步驟利用在所述轉移腔室內設置的所述隔離片移送機器人，將比所述隔離片更大尺寸的所述基板提起並移送後，放置於所述隔離片上，以使所述隔離片可位於所述基板的中間部分。
  6. 如申請專利範圍第3項所述的基板處理方法，其中，所述小車提升步驟利用可以擱置在所述基板周邊部分的所述小車，將所述基板從所述隔離片處分離並提升。
  7. 如申請專利範圍第3項所述的基板處理方法，其中，所述隔離片卸載步驟利用設置在所述轉移腔室的所述隔離片移送機器人，將所述隔離片從所述衛星裝置處提起並提升，並移送至所述轉移腔室。
  8. 如申請專利範圍第3項所述的基板處理方法，其中，所述小車下降步驟之後，還包括：基板自轉步驟，將所述衛星裝置旋轉，使所述基板自轉；基板公轉步驟，將所述基座旋轉，所述衛星裝置沿著圓形軌道旋轉使所述基板進行公轉。
  9. 如申請專利範圍第3項所述的基板處理方法，其中，包括：小車提升步驟，將支撐所述基板的小車提升，使將安置於所述衛星裝置的所述基板可從所述衛星裝置分離；隔離片安裝步驟，將所述隔離片移送至所述衛星裝置和所述基板之間，將所述隔離片安裝至所述衛星裝置；小車下降步驟，將所述小車下降，使所述基板可以安置於所述隔離片；基板卸載步驟，將所述基板從所述隔離片接收並將所述基板移送至所述轉 移腔室；以及隔離片卸載步驟，將所述隔離片從所述衛星裝置卸載至所述轉移腔室。
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