TWI689792B - 繞射量測標的 - Google Patents

繞射量測標的 Download PDF

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Publication number
TWI689792B
TWI689792B TW107140136A TW107140136A TWI689792B TW I689792 B TWI689792 B TW I689792B TW 107140136 A TW107140136 A TW 107140136A TW 107140136 A TW107140136 A TW 107140136A TW I689792 B TWI689792 B TW I689792B
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TW
Taiwan
Prior art keywords
sub
target
periodic structure
layer
periodic
Prior art date
Application number
TW107140136A
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English (en)
Chinese (zh)
Other versions
TW201923486A (zh
Inventor
巴塔哈爾亞卡司徒夫
布爾亨利克斯 威爾翰瑪斯 瑪莉亞 范
大衛 佛奎特克里斯多菲
真 海德 史密徳韓卓克
德 斯加毛瑞斯 凡
包伊夫亞歷 傑福瑞 丹
哈倫理查 喬哈奈 法蘭西卡斯 凡
柳星蘭
馬可斯 瑪麗亞 貝特曼喬哈奈
福克斯安迪亞司
阿布貝克 歐瑪 亞當歐瑪
庫必司麥可
賈庫伯斯 喬漢 傑克馬丁
Original Assignee
荷蘭商Ａｓｍｌ荷蘭公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 荷蘭商Ａｓｍｌ荷蘭公司 filed Critical 荷蘭商Ａｓｍｌ荷蘭公司
Publication of TW201923486A publication Critical patent/TW201923486A/zh
Application granted granted Critical
Publication of TWI689792B publication Critical patent/TWI689792B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
TW107140136A 2014-08-29 2015-08-27 繞射量測標的 TWI689792B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
EP14182962.2 2014-08-29
EP14182962 2014-08-29
??14182962.2 2014-08-29
US201462090801P 2014-12-11 2014-12-11
US62/090,801 2014-12-11
US201562170008P 2015-06-02 2015-06-02
US62/170,008 2015-06-02

Publications (2)

Publication Number Publication Date
TW201923486A TW201923486A (zh) 2019-06-16
TWI689792B true TWI689792B (zh) 2020-04-01

Family

ID=54065326

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107140136A TWI689792B (zh) 2014-08-29 2015-08-27 繞射量測標的

Country Status (4)

Country Link
JP (1) JP6951495B2 (ko)
KR (3) KR102406393B1 (ko)
IL (1) IL280370B2 (ko)
TW (1) TWI689792B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
TWI715286B (zh) * 2019-11-13 2021-01-01 華邦電子股份有限公司 微影製程的關鍵尺寸的監控結構
CN111766764A (zh) * 2020-06-24 2020-10-13 上海华力集成电路制造有限公司 一种套刻精度量测标记及其使用方法
WO2024184047A1 (en) * 2023-03-06 2024-09-12 Asml Netherlands B.V. Multi-layer metrology systems and methods
CN116679535B (zh) * 2023-08-04 2023-11-21 魅杰光电科技(上海)有限公司 套刻误差的量测方法、装置、系统及存储介质

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021984A (ja) * 2006-06-20 2008-01-31 Asml Netherlands Bv 角度分解したスペクトロスコピーリソグラフィの特性解析方法および装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7629697B2 (en) * 2004-11-12 2009-12-08 Asml Netherlands B.V. Marker structure and method for controlling alignment of layers of a multi-layered substrate
JP2008117909A (ja) 2006-11-02 2008-05-22 Sharp Corp 位置合せデータ算出方法および位置合せデータ算出装置、位置合せ方法および位置合せ装置と、露光方法および露光装置
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
US9454072B2 (en) * 2012-11-09 2016-09-27 Kla-Tencor Corporation Method and system for providing a target design displaying high sensitivity to scanner focus change

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008021984A (ja) * 2006-06-20 2008-01-31 Asml Netherlands Bv 角度分解したスペクトロスコピーリソグラフィの特性解析方法および装置

Also Published As

Publication number Publication date
IL280370A (en) 2021-03-01
TW201923486A (zh) 2019-06-16
IL280370B2 (en) 2024-07-01
KR20210032009A (ko) 2021-03-23
JP6951495B2 (ja) 2021-10-20
IL280370B1 (en) 2024-03-01
KR20190064674A (ko) 2019-06-10
JP2020112827A (ja) 2020-07-27
KR102295507B1 (ko) 2021-09-01
KR102230150B1 (ko) 2021-03-23
KR20210110732A (ko) 2021-09-08
KR102406393B1 (ko) 2022-06-08

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