TWI687534B - Backing plate and sputtering target and method for using the same - Google Patents
Backing plate and sputtering target and method for using the same Download PDFInfo
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- TWI687534B TWI687534B TW107131508A TW107131508A TWI687534B TW I687534 B TWI687534 B TW I687534B TW 107131508 A TW107131508 A TW 107131508A TW 107131508 A TW107131508 A TW 107131508A TW I687534 B TWI687534 B TW I687534B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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Abstract
Description
本發明是有關於一種背板、使用其之濺射靶材及其使用方法。 The invention relates to a backplane, a sputtering target using the same, and a method of using the same.
目前,濺鍍技術(sputtering)係為主要沉積鍍膜技術所使用的方式之一。濺鍍技術一般是在濺鍍腔室中形成電漿,電漿(plasma)會對金屬靶材進行離子轟擊(ion bombardment),使靶材的金屬原子撞擊出,而形成氣體分子發射到達所要沉積的基材上,氣體分子經過附著、吸附、表面遷徙、成核等濺鍍作用之後,最終在基材上形成具有金屬原子的金屬薄膜。濺鍍技術係廣泛地應用在工業生產和科學研究領域。然而,一般濺射靶材使用焊接製程(bonding),因此組裝費時、費用較高且使用彈性小。 Currently, sputtering is one of the main methods used to deposit coatings. Sputtering technology generally forms plasma in the sputtering chamber. The plasma bombards the metal target with ion bombardment, causing the metal atoms of the target to strike out, forming gas molecules that emit to the desired deposit. On the substrate, after the gas molecules undergo sputtering such as attachment, adsorption, surface migration, and nucleation, a metal thin film with metal atoms is finally formed on the substrate. Sputtering technology is widely used in industrial production and scientific research. However, the sputtering target generally uses a bonding process, so assembly is time-consuming, expensive, and has low flexibility.
本發明係有關於一種背板、使用其之濺射靶材及其使用方法。 The invention relates to a backplane, a sputtering target using the same, and a method of using the same.
根據本發明之一方面,提出一種背板,其包括第一板體、第二板體及固定件。固定件用以可拆地連接第一板體及第二板體。 According to one aspect of the present invention, a backplane is provided, which includes a first plate body, a second plate body and a fixing member. The fixing member is used for detachably connecting the first plate body and the second plate body.
根據本發明之一方面,提出一種濺射靶材,其包括如上所述之背板與濺射板,濺射板設置在背板上。 According to one aspect of the present invention, a sputtering target material is proposed, which includes the back plate and the sputtering plate as described above, and the sputtering plate is provided on the back plate.
根據本發明之另一方面,提出一種濺射靶材的使用方法,包括:提供如上所述之背板。藉由固定件連接第一板體及第二板體。配置濺射板在背板上。 According to another aspect of the present invention, a method for using a sputtering target is proposed, which includes: providing the back plate as described above. The first plate body and the second plate body are connected by a fixing member. Configure the sputtering plate on the backplane.
為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下: In order to have a better understanding of the above and other aspects of the present invention, the following examples are specifically described in conjunction with the accompanying drawings as follows:
102、202、302:第一板體 102, 202, 302: the first plate
102A、202A、106A、206A:溝槽 102A, 202A, 106A, 206A: groove
102B:板基底 102B: Board base
102W1、106W1、302W1、306W1:外板壁 102W1, 106W1, 302W1, 306W1: outer panel wall
102W2、106W2、302W2、306W2:內板壁 102W2, 106W2, 302W2, 306W2: inner panel wall
103:管線通孔 103: pipeline through hole
104:流體管路 104: fluid line
106、206、306:第二板體 106, 206, 306: second plate
108、208、308:背板 108, 208, 308: backplane
108A:腔室固定孔 108A: chamber fixing hole
110、310:第一板體表面 110, 310: the first plate surface
112、312:第二板體表面 112, 312: second board surface
114、214:容置空間 114, 214: accommodating space
116:固定件 116: fastener
118:濺射板 118: Sputtered board
118S:濺射表面 118S: Sputtered surface
120、220、320:濺射靶材 120, 220, 320: sputtering target
102C、106C、302C、306C:固定孔 102C, 106C, 302C, 306C: fixing holes
H、H1、H2:高度 H, H1, H2: height
L、L1:長度 L, L1: length
W:寬度 W: width
第1A圖至第1E圖繪示根據第一實施例概念之濺射靶材的使用方法。 FIGS. 1A to 1E illustrate a method of using a sputtering target according to the concept of the first embodiment.
第2A圖至第2D圖繪示根據第二實施例概念之濺射靶材的使用方法。 2A to 2D illustrate a method of using a sputtering target according to the concept of the second embodiment.
第3圖繪示根據第三實施例概念之濺射靶材。 FIG. 3 shows a sputtering target according to the concept of the third embodiment.
以下係以一些實施例做說明。須注意的是,本揭露並非顯示出所有可能的實施例,未於本揭露提出的其他實施態樣也可能可以應用。再者,圖式上的尺寸比例並非按照實際產品等比例繪製。因此,說明書和圖示內容僅作敘述實施例之用,而非 作為限縮本揭露保護範圍之用。另外,實施例中之敘述,例如細部結構、製程步驟和材料應用等等,僅為舉例說明之用,並非對本揭露欲保護之範圍做限縮。實施例之步驟和結構各之細節可在不脫離本揭露之精神和範圍內根據實際應用製程之需要而加以變化與修飾。以下是以相同/類似的符號表示相同/類似的元件做說明。 The following is a description with some embodiments. It should be noted that this disclosure does not show all possible embodiments, and other implementations not proposed in this disclosure may also be applicable. Furthermore, the size ratios in the drawings are not drawn according to the actual products. Therefore, the description and illustrations are only for describing the embodiments, not for As a limitation of the disclosure of the scope of protection. In addition, the descriptions in the embodiments, such as the detailed structure, process steps and material application, etc., are for illustrative purposes only, and do not limit the scope of the disclosure to be protected. The details of the steps and structure of the embodiments can be changed and modified according to the needs of the actual application process without departing from the spirit and scope of the present disclosure. The following description uses the same/similar symbols to indicate the same/similar components.
第1A圖至第1E圖繪示根據第一實施例概念之濺射靶材的使用方法。 FIGS. 1A to 1E illustrate a method of using a sputtering target according to the concept of the first embodiment.
請參照第1A圖,提供第一板體102。第一板體102包括板基底102B、外板壁102W1及內板壁102W2。外板壁102W1是從板基底102B的四側邊緣凸出的封閉框形壁部分。內板壁102W2是從板基底102B凸出並連接從外板壁102W1之內表面的條狀壁部分。第一板體102具有由板基底102B、外板壁102W1及內板壁102W2定義出的溝槽102A。此實施例中,外板壁102W1及內板壁102W2上設有複數固定孔102C。板基底102B設有管線通孔103。管線通孔103分別連通溝槽102A與外界環境。
Please refer to FIG. 1A to provide the
請參照第1B圖,將流體管路104配置在第一板體102的溝槽102A中。流體管路104之相對兩端分別穿過二管線通孔103而延伸至外部,即板基底102B上的二管線通孔103可分別作為流體管路104的出液口、入液口。
Referring to FIG. 1B, the
請參照第1C圖,提供第二板體106。第二板體106具有溝槽106A。將流體管路104夾設在第一板體102與第二板體
106之間,並使流體管路104配置在溝槽102A與溝槽106A中,從而形成背板108。
Please refer to FIG. 1C to provide the
一實施例中,背板108之長度L約為2500-3500mm,例如3000mm;背板108之寬度W約為100-300mm,例如190mm。第一板體102之高度H1約佔背板108之高度H的75%~87.5%,例如80%。第二板體106之高度H2約佔背板108之高度H的12.5%~25%,例如20%。一實施例中,背板108之高度H約為16mm,第二板體106之高度H2則約為2mm-4mm,例如3.2mm、第一板體102之高度H1約為12-14mm,例如12.8mm。背板108具有相對的第一板體表面110及第二板體表面112,第一板體表面110及第二板體表面112分別位於背板108的相反側。
In one embodiment, the length L of the
第一板體102的溝槽102A與第二板體106的溝槽106A共同定義出背板108的容置空間114。此實施例中,輪廓是呈蛇行狀並列成2列。第一板體102的溝槽102A與第二板體106的溝槽106A構成的容置空間114的形狀輪廓與尺寸可配合流體管路104,具有U形輪廓,使得流體管路104能夠卡合在容置空間114中。
The
一實施例中,背板108之中還可選擇性的設置一磁性物質(未繪示),磁性物質設置在容置空間114中,以控制之後配置濺射板118(繪示於第1D圖)的磁力線型。
In one embodiment, a magnetic substance (not shown) can be selectively disposed in the
請參照第1C~1D圖,可使用複數個固定件116可拆地固定第一板體102及第二板體106。第二板體106亦設有外板
壁106W1及內板壁106W2,分別與第一板體102的外板壁102W1及內板壁102W2相對應,第二板體106之外板壁106W1及內板壁106W2之上設有與第一板體102之複數固定孔102C相對應連通的複數固定孔106C,複數固定孔106C並分別貫穿第二板體106之外板壁106W1及內板壁106W2。複數個固定件116個別配置在第一板體102與第二板體106相對應的複數固定孔102C、106C中,在背板108不重疊容置空間114的部分進行鎖固,例如配置在第一板體102的外板壁102W1及內板壁102W2,及分別與其相對應重疊的第二板體106的外板壁106W1及內板壁106W2之間。此實施例中,複數個固定件116是分別從第二板體表面112穿過第二板體106的外板壁106W1及內板壁106W2而穿入第一板體102的外板壁102W1及內板壁102W2中,即該些固定件116中,有一些固定件116是從第二板體106的外板壁106W1對應穿入第一板體102的外板壁102W1中,另一些固定件116是從第二板體106的內板壁106W2對應穿入第一板體102的內板壁102W2中,且固定件116係各別從第二板體106的固定孔106C對應鎖入第一板體102的固定孔102C中。固定件116可包括螺絲、插栓、或黏著劑,例如金屬黏著劑、軟焊劑等,其中螺絲或插栓的材料可為不鏽鋼、鐵。
Please refer to FIGS. 1C to 1D, a plurality of fixing
一實施例中,可利用鑽孔方式在第一板體102及第二板體106的複數固定孔102C、106C中分別形成具有對應螺絲的螺紋側面,且可使用螺絲起子將螺絲旋進螺絲孔,即利用螺旋
機制將固定件116從第二板體表面112對應鎖入第二板體106的固定孔106C及第一板體102的固定孔102C中,使固定件116分別連接第二板體106及第一板體102的螺紋側面,以可拆地固定第二板體106及第一板體102。透過上述之鎖固方法以形成之背板108,其複數個固定件116對第一板體102及第二板體106產生之扭力值約為25KgF-cm~35KgF-cm,例如29.4KgF-cm。複數個固定件116須避開流體管路104設置,如複數個固定件116分布在對應於第二板體106之外板壁106W1、內板壁106W2及第一板體102之外板壁102W1、內板壁102W2之間,以對應連接第二板體106及第一板體102,複數固定孔102C、106C設置之位置可供複數個固定件116定位在背板108之容置空間114外側的部分,因此複數個固定件116不重疊容置空間114,以避免影響背板108散熱,使流體管路104達到均勻的冷卻效果。
In one embodiment, a plurality of fixing
一實施例中,複數個固定件116之總數約介於3至150個,例如30個。一實施例中,複數個固定件116分布在第一板體102或第二板體106上的單位密度約為0.000526~0.026個/cm2,例如0.01個/cm2。一實施例中,複數個固定件116之總表面積約佔第一板體表面110或第二板體表面112的面積的1%~50%,例如30%。一實施例中,複數個固定件116之間距約介於2~10cm,例如5cm。第一板體102、第二板體106與流體管路104的組裝方法簡單、快速。相較於一般技術採用焊接製程(bonding)的組裝方式,根據本實施例使用鎖固方法可降低組裝時
間及製造成本,提升生產效率。
In one embodiment, the total number of the plurality of fixing
請參照第1D圖,第1D圖是以類似第1C圖所示AB線的方位所繪示出的剖面圖。如第1D圖所示,配置濺射板118在背板108的第二板體表面112上,濺射板118之長度L1約為2150-3150mm,例如2650mm,此時第二板體表面112可視為背板108的上表面。一實施例中,複數個固定件116可配置於濺射板118之下。一實施例中,將濺射板118配置在背板108的第一板體表面110上,此時第一板體表面110可視為背板108的上表面。
Please refer to FIG. 1D. FIG. 1D is a cross-sectional view similar to the line AB shown in FIG. 1C. As shown in FIG. 1D, the sputtering
一實施例中,可利用接合件(未繪示)將濺射板118固定在背板108的第二板體表面112上,從而組裝完成濺射靶材120。濺射板118與背板108之間的接合件(未繪示)可包括螺絲、插栓、或黏著劑,例如金屬黏著劑、軟焊劑等。濺射板118的濺射表面118S為濺射靶材120放置在濺鍍腔室中時面向欲被沉積薄膜之基材的表面。一實施例中,流體管路104中可導入液體,而可對濺射靶材120提供冷卻、散熱的效果。
In one embodiment, the
請參照第1E圖,一實施例中,背板108之最外圍可更包括至少一腔室固定孔108A,以供後續固定於濺鍍腔室(未繪示)之用。
Please refer to FIG. 1E. In one embodiment, the outermost periphery of the
實施例中,可對使用後或需重工之濺射靶材120進行拆解。拆解方法包括先將濺射板118從背板108上卸除。再拆卸背板108之固定件116,例如,可利用螺絲起子將固定件116(例如為螺絲)旋出固定孔102C、106C,使背板108的第一板體102
與第二板體106彼此分離,並將流體管路104從第一板體102及第二板體106中卸除而移出背板108之容置空間114,拆解方式簡單且快速,而可增進製造速度。
In the embodiment, the
濺射板118的材質可視欲沉積在基材上的薄膜材質而定,例如為金屬或氧化物。背板108的第一板體102及第二板體106與濺射板118的材質可為相同或不同。一實施例中,背板108的第一板體102及第二板體106的材質為銅,濺射板118的材質是選用鋁。另一實施例中,背板108的第一板體102及第二板體106的材質皆為鋁、鈦或銅的金屬,濺射板118的材質為鋁、鈦或銅等金屬或氧化銦錫氧化物。
The material of the
第2A圖至第2D圖繪示根據第二實施例概念之濺射靶材的使用方法。 2A to 2D illustrate a method of using a sputtering target according to the concept of the second embodiment.
請參照第2A圖,提供第一板體202,其與第1A圖所示之第一板體102的差異說明如下。第一板體202包括板基底102B與外板壁102W1。第一板體102具有由板基底102B及外板壁102W1定義出的溝槽202A。板基底102B設有連通溝槽202A與外界環境的二管線通孔103。
Please refer to FIG. 2A to provide the
請參照第2B圖,將流體管路104配置在第一板體202的溝槽202A中,並將流體管路104之相對二端分別穿過二管線通孔103而延伸至外部。
Referring to FIG. 2B, the
請參照第2C圖,提供第二板體206。第二板體206具有溝槽206A。將流體管路104夾設在第一板體202與第二板體
206之間,並使流體管路104配置在溝槽202A與溝槽206A中,從而形成背板208。第一板體202的溝槽202A與第二板體206的溝槽206A共同定義出背板208的容置空間214。此實施例中,溝槽202A與溝槽206A構成的容置空間214具有長方體形狀。流體管路104可配置在容置空間214中,並使用固定件116將第一板體202及第二板體206可拆地固定在一起。固定件116可配置在背板208之位在容置空間214外側的部分,請參考第一實施例之鎖固方法以形成背板208,於此不再贅述。
Please refer to FIG. 2C to provide the
請參照第2D圖,第2D圖是以類似第2C圖所示CD線的方位所繪示出的剖面圖。如第2D圖所示,可利用一接合件(未繪示)將濺射板118固定在背板208的第二板體206上,從而組裝完成濺射靶材220。接合件(未繪示)可包括螺絲、插栓、或黏著劑,例如金屬黏著劑、軟焊劑等。
Please refer to FIG. 2D, which is a cross-sectional view drawn in an orientation similar to the CD line shown in FIG. 2C. As shown in FIG. 2D, a
實施例中,可對濺射靶材220進行拆解。拆解方法包括將濺射板118從背板208上卸除。亦同樣可如第一實施例之方式拆卸背板208之固定件116,使第一板體202與第二板體206彼此分離,並將流體管路104從第一板體202及第二板體206中卸除而移出背板208之容置空間214。
In an embodiment, the
第3圖繪示根據第三實施例概念之濺射靶材320,其與第一實施例的差異在於,此實施例中,複數個固定件116是分別從相對於第二板體表面312的第一板體表面310穿過第一板體302的外板壁302W1及內板壁302W2而穿入第二板體306的
外板壁306W1及內板壁306W2中,即該些固定件116中,有一些固定件116是從第一板體302的外板壁302W1對應穿入第二板體306的外板壁306W1中,另一些固定件116是從第一板體302的內板壁302W2對應穿入第二板體306的內板壁306W2中,且複數個固定件116係從第一板體302的固定孔302C對應鎖入第二板體306的固定孔306C中。例如使用螺絲起子將螺絲旋進螺絲孔,即利用螺旋機制將固定件116從第一板體表面310對應鎖入第一板體302的固定孔302C及第二板體306的固定孔306C中,使固定件116分別連接第一板體302及第二板體306的螺紋側面,以可拆地固定第一板體302及第二板體306。此概念亦可延伸至第二實施例。
FIG. 3 illustrates the
根據本揭露概念的濺射靶材亦可視實際需求任意調變結構設計。例如,另一實施例中,第一板體與第二板體中,只有第一板體具有溝槽,且此溝槽具有可容納整個流體管路的尺寸與形狀。又另一實施例中,第一板體與第二板體中,只有第二板體具有溝槽,且此溝槽具有可容納整個流體管路的尺寸與形狀。再另一實施例中,由第一板體及第二板體定義出的容置空間可具有其它形狀,例如呈蛇行狀並列成3列、4列或更多列、或呈螺旋形狀、或具有立方體形狀、圓柱體形狀等,但不限於此,只要流體管路能配置在其中,且第一板體及第二板體可相鄰接彼此固定即可。 The sputtering target according to the concept of the present disclosure can also be arbitrarily adjusted in structural design according to actual needs. For example, in another embodiment, of the first plate body and the second plate body, only the first plate body has a groove, and the groove has a size and shape that can accommodate the entire fluid line. In yet another embodiment, of the first plate body and the second plate body, only the second plate body has a groove, and the groove has a size and shape that can accommodate the entire fluid pipeline. In still another embodiment, the accommodating space defined by the first plate body and the second plate body may have other shapes, for example, a serpentine shape arranged in 3 rows, 4 rows or more, or a spiral shape, or It has a cubic shape, a cylindrical shape, etc., but it is not limited thereto, as long as the fluid line can be disposed therein, and the first plate body and the second plate body can be fixed adjacent to each other.
綜上所述,雖然本發明已以實施例揭露如上,然其 並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。 In summary, although the invention has been disclosed as above with examples, its It is not intended to limit the invention. Those with ordinary knowledge in the technical field to which the present invention belongs can make various modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be deemed as defined by the scope of the attached patent application.
102:第一板體 102: the first plate
102A、106A:溝槽 102A, 106A: groove
102C、106C:固定孔 102C, 106C: fixed hole
102W1、106W1:外板壁 102W1, 106W1: outer panel wall
102W2、106W2:內板壁 102W2, 106W2: inner wall
104:流體管路 104: fluid line
106:第二板體 106: second plate
108:背板 108: backplane
110:第一板體表面 110: surface of the first plate
112:第二板體表面 112: second board surface
114:容置空間 114: accommodating space
116:固定件 116: fastener
118:濺射板 118: Sputtered board
118S:濺射表面 118S: Sputtered surface
120:濺射靶材 120: Sputtering target
L1:長度 L1: Length
Claims (10)
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TW107131508A TWI687534B (en) | 2018-09-07 | 2018-09-07 | Backing plate and sputtering target and method for using the same |
CN201910184139.9A CN110684951A (en) | 2018-09-07 | 2019-03-12 | Backing plate, sputtering target material using backing plate and using method of sputtering target material |
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TW107131508A TWI687534B (en) | 2018-09-07 | 2018-09-07 | Backing plate and sputtering target and method for using the same |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWM403506U (en) * | 2010-09-28 | 2011-05-11 | Bay Zu Prec Co Ltd | Target apparatus |
TW201708582A (en) * | 2015-07-10 | 2017-03-01 | Sumitomo Chemical Co | Backing plate, sputtering target, and method for manufacturing same |
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JPH06172988A (en) * | 1992-12-01 | 1994-06-21 | Nissin Electric Co Ltd | Backing plate for puttering target |
TW200819553A (en) * | 2006-10-19 | 2008-05-01 | Metal Ind Res & Dev Ct | Cooling water channel of target source cooler |
JP5057904B2 (en) * | 2007-09-07 | 2012-10-24 | 株式会社日本セラテック | Temperature control plate and manufacturing method thereof |
JP4382867B1 (en) * | 2009-01-22 | 2009-12-16 | 順 上野 | Target structure and method for manufacturing target structure |
CN201713570U (en) * | 2010-05-07 | 2011-01-19 | 上海承哲光电科技有限公司 | Carrying tool for reducing temperature in sputtering |
CN201809435U (en) * | 2010-10-19 | 2011-04-27 | 北儒精密股份有限公司 | Target device |
CN201999986U (en) * | 2011-01-21 | 2011-10-05 | 许舒华 | Back panel structure with cooling flow passages |
KR101079621B1 (en) * | 2011-06-30 | 2011-11-03 | 박경일 | Glueless type connecting structure of target and backing plate |
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TWM403506U (en) * | 2010-09-28 | 2011-05-11 | Bay Zu Prec Co Ltd | Target apparatus |
TW201708582A (en) * | 2015-07-10 | 2017-03-01 | Sumitomo Chemical Co | Backing plate, sputtering target, and method for manufacturing same |
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