TWI678724B - Metal mask production equipment - Google Patents
Metal mask production equipment Download PDFInfo
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- TWI678724B TWI678724B TW107140082A TW107140082A TWI678724B TW I678724 B TWI678724 B TW I678724B TW 107140082 A TW107140082 A TW 107140082A TW 107140082 A TW107140082 A TW 107140082A TW I678724 B TWI678724 B TW I678724B
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- 239000002184 metal Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 claims description 23
- 230000008439 repair process Effects 0.000 claims description 16
- 239000000428 dust Substances 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 8
- 239000007921 spray Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 13
- 238000005286 illumination Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 241001270131 Agaricus moelleri Species 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
Abstract
本發明提供一種金屬遮罩生產設備，其中，包括：雷射器部，產生雷射光束；波束成形器部，改變上述雷射光束的光斑條件；分束器部，根據選擇將上述雷射光束分支成多個光束；第一聚光透鏡部，對依序藉由上述波束成形器部和上述分束器部的上述雷射光束進行聚光；及第二聚光透鏡部，對通過上述第一聚光透鏡部的上述雷射光束進行再聚光來將上述雷射光束照射到待加工物件。 The invention provides a metal mask production equipment, which includes: a laser unit that generates a laser beam; a beam shaper unit that changes a spot condition of the laser beam; a beam splitter unit that selects the laser beam according to a selection Branching into a plurality of light beams; a first condensing lens unit that condenses the laser light beams sequentially passing through the beamformer unit and the beam splitter unit; and a second condensing lens unit that passes the first The laser beam of a condensing lens unit performs recondensing to irradiate the laser beam to an object to be processed.
Description
本發明涉及在用於有機發光顯示裝置的基板上沉積有機發光層時使用的金屬遮罩的生產設備。 The present invention relates to a production equipment for a metal mask used in depositing an organic light emitting layer on a substrate for an organic light emitting display device.
近年來，有機發光顯示裝置(organic light emitting diode display；OLED)備受矚目。由於有機發光顯示裝置本身具有發光特性，因此與液晶顯示裝置不同地不需要單獨的背光並且可以實現為超薄型。並且，有機發光顯示裝置具有如低功耗、高亮度及高反應速度等高品質特性。 In recent years, organic light emitting diode displays (OLEDs) have attracted much attention. Since the organic light emitting display device itself has a light emitting characteristic, unlike a liquid crystal display device, a separate backlight is not required and can be realized as an ultra-thin type. In addition, the organic light emitting display device has high quality characteristics such as low power consumption, high brightness, and high response speed.
另一方面，有機發光顯示裝置包括預定圖案的有機發光層。這種有機發光層藉由使用具有如圓形、正方形等精細圖案的沉積遮罩來進行沉積的製程形成。通常，作為沉積遮罩，主要使用由如不脹鋼(invar)或不銹鋼等金屬材料製成的精細金屬遮罩(fine metal mask；FMM)。 On the other hand, the organic light emitting display device includes an organic light emitting layer in a predetermined pattern. This organic light emitting layer is formed by a deposition process using a deposition mask having a fine pattern such as a circle or a square. Generally, as the deposition mask, a fine metal mask (FMM) made of a metal material such as invar or stainless steel is mainly used.
習知金屬遮罩藉由光刻技術生產並製造。上述光刻技術包括各種步驟，例如，施加和塗覆光阻劑的過程、加熱光阻劑的過程、曝光過程及顯影過程等。並且，習知金屬遮罩使用雷射光束來生產並製造。 Conventional metal masks are produced and manufactured by photolithography. The above-mentioned photolithography technology includes various steps, for example, a process of applying and coating a photoresist, a process of heating the photoresist, an exposure process, a development process, and the like. Also, conventional metal shields are produced and manufactured using laser beams.
然而，近年來，隨著高解析度有機發光顯示裝置的商業化，較佳地，需要生產並製造具有10μm或更小的遮罩孔的精細金屬遮罩。然而，藉由習知裝置和方法無法形成由具有上述尺寸的遮罩孔構成的精細圖案。 However, in recent years, with the commercialization of high-resolution organic light-emitting display devices, it is preferable to produce and manufacture a fine metal mask having a mask hole of 10 μm or less. However, it is impossible to form a fine pattern composed of a mask hole having the above-mentioned size by a conventional device and method.
並且，當在形成遮罩孔的過程中發生缺陷時，習知裝置和方法無必須使用單獨的修復裝置和方法來進行修復。此外，用於實現習知裝置和方法 的光學系統具有不能以各種方式改變雷射光束的光斑條件的問題。而且，習知裝置和方法具有無法有效地清潔在遮罩孔等的加工過程中產生的灰塵的問題。並且，習知裝置和方法具有無法即時確認遮罩孔等的加工過程。 Also, when a defect occurs in the process of forming a mask hole, the conventional device and method do not necessarily use a separate repair device and method for repair. In addition, a device and method for implementing the conventional The optical system has the problem that the spot conditions of the laser beam cannot be changed in various ways. Moreover, the conventional device and method have a problem that dust generated during processing of a mask hole or the like cannot be effectively cleaned. In addition, the conventional apparatus and method have a machining process in which mask holes and the like cannot be confirmed immediately.
(習知技術文獻) (Known technical literature)
(專利文獻) (Patent Literature)
韓國授權專利第10-1582161號(授權日：2015.12.28.) Korean Authorized Patent No. 10-1582161 (Grant Date: 2015.12.28.)
韓國授權專利第10-1267220號(授權日：2013.05.20.) Korean Patent No. 10-1267220 (Grant Date: 2013.05.20.)
韓國公開專利第10-2015-0035131號(公開日：2015.04.06.) Korean Published Patent No. 10-2015-0035131 (Publication date: 2015.04.06.)
本發明的實施例是為了解決上述問題而提出的，其目的在於提供一種金屬遮罩生產設備，上述金屬遮罩生產設備與以往相比進一步減少雷射光束的光斑尺寸，以在作為到待加工物件的金屬箔上直接形成所需尺寸的遮罩孔圖案，與此同時，能夠在同一裝置中簡單地修復在藉由光刻技術製造金屬遮罩時發生的缺陷。 The embodiments of the present invention are proposed in order to solve the above problems, and an object thereof is to provide a metal mask production equipment. The metal mask production equipment further reduces the spot size of a laser beam compared with the past, so that A mask hole pattern of a desired size is directly formed on the metal foil of an object, and at the same time, defects occurring when a metal mask is manufactured by photolithography can be easily repaired in the same device.
並且，本發明的目的在於提供一種金屬遮罩生產設備，上述金屬遮罩生產設備可以將照射到待加工物件上的雷射光束的光斑尺寸調節在1μm(微米)至5μm的範圍內，還可調整其光斑形狀和光斑間距。 In addition, an object of the present invention is to provide a metal mask production equipment, which can adjust the spot size of a laser beam irradiated onto an object to be processed in a range of 1 μm (microns) to 5 μm, and Adjust its spot shape and spot spacing.
並且，本發明的目的在於藉由乾淨地去除在使用金屬遮罩生產設備的過程中產生的灰塵，從而生產高品質的金屬遮罩。 Further, the object of the present invention is to produce high-quality metal shields by cleanly removing dust generated during the process of using the metal shield production equipment.
並且，本發明的目的在於提供一種金屬遮罩生產設備，上述金屬遮罩生產設備不僅可以即時確認待加工物件的對準(align)，還可以即時確認加工位置、光學系統焦距的調整及實際加工的形狀等。 In addition, an object of the present invention is to provide a metal mask production equipment. The above metal mask production equipment can not only confirm the alignment of the object to be processed in real time, but also the processing position, the adjustment of the optical system focal length, and the actual processing. Shape etc.
為了達到該目的，本發明的實施例提供一種金屬遮罩生產設備，其中，包括：雷射器部，產生雷射光束；波束成形器部，改變該雷射光束的光斑條件；分束器部，根據選擇將該雷射光束分支成多個光束；第一聚光透鏡部，對依序藉由該波束成形器部和該分束器部的該雷射光束進行聚光；及第二聚光透鏡部，對通透過該第一聚光透鏡部的該雷射光束進行再聚光來將該雷射光束照射到待加工物件。 In order to achieve the object, an embodiment of the present invention provides a metal mask production equipment, which includes: a laser unit that generates a laser beam; a beam shaper unit that changes a spot condition of the laser beam; a beam splitter unit According to the selection, the laser beam is branched into a plurality of beams; a first condenser lens section focuses the laser beam sequentially through the beamformer section and the beam splitter section; and a second condenser lens section The optical lens unit refocuses the laser beam that has passed through the first condenser lens unit to irradiate the laser beam to the object to be processed.
上述金屬遮罩生產設備還可包括模式設定部，該模式設定部包括加工模式和修復模式，該加工模式用於在該待加工物件形成孔圖案，該修復模式用於修復在該待加工物件中產生的缺陷。 The above metal mask production equipment may further include a mode setting section including a processing mode and a repair mode for forming a hole pattern on the object to be processed, and the repair mode for repairing the object to be processed Defects generated.
該分束器部可以在該加工模式下位於該雷射光束的光路上，且在該修復模式下從該雷射光束的光路脫離。 The beam splitter section may be located on the optical path of the laser beam in the processing mode, and separated from the optical path of the laser beam in the repair mode.
該金屬遮罩生產設備還可包括：輸送托台；及直線電機部，使該分束器部在該輸送托台上進行直線往復輸送。 The metal mask production equipment may further include: a conveying table; and a linear motor section that causes the beam splitter section to perform linear reciprocating conveyance on the conveying table.
該光斑條件可以包括光斑尺寸、光斑形狀及在藉由該分束器部分支成多個光束的雷射光束之間的光斑間距。 The spot conditions may include spot size, spot shape, and spot spacing between laser beams that are branched into a plurality of beams by the beam splitter portion.
該金屬遮罩生產設備還可包括抽吸單元，該抽吸單元佈置在該第二聚光透鏡部與該待加工物件之間且將在該待加工物件所產生的灰塵排放到外部。 The metal mask production equipment may further include a suction unit disposed between the second condenser lens portion and the object to be processed and discharging dust generated in the object to be processed to the outside.
該抽吸單元可以包括：腔部，形成有供該雷射光束通過的貫通孔；送風部，形成在該腔部中，以從該雷射光束的通過方向傾斜預定角度的方式噴射壓縮空氣；及抽吸部，吸入由於該壓縮空氣的噴射而飛散的灰塵。 The suction unit may include a cavity portion formed with a through hole through which the laser beam passes, and a blower portion formed in the cavity portion to inject compressed air in a manner inclined at a predetermined angle from a passing direction of the laser beam; The suction unit sucks dust scattered by the jet of the compressed air.
該金屬遮罩生產設備還可包括相機單元，該相機單元形成為具有與入射到該第二聚光透鏡部的該雷射光束的光路同軸的光路。 The metal mask production facility may further include a camera unit formed to have an optical path coaxial with an optical path of the laser beam incident on the second condenser lens portion.
該金屬遮罩生產設備還可包括雷射半反射鏡，該雷射半反射鏡反射在該第二聚光透鏡部與該相機單元之間通過該第一聚光透鏡部的該雷射光束，且將該待加工物件的圖像透射並傳遞到該相機單元。 The metal mask production equipment may further include a laser half mirror that reflects the laser beam passing between the second condenser lens portion and the camera unit through the first condenser lens portion, The image of the object to be processed is transmitted and transmitted to the camera unit.
該金屬遮罩生產設備還可包括安置部，該安置部的高度根據該待加工物件的加工厚度被調節。 The metal mask production equipment may further include a placement portion whose height is adjusted according to a processing thickness of the object to be processed.
根據如上所述的本發明的解決問題的方案，可以預期包括以下內容的各種效果。然而，本發明不是只有發揮下面的所有效果才能完成的。 According to the solution to the problem of the present invention as described above, various effects including the following can be expected. However, the present invention cannot be completed only by exerting all the following effects.
在本發明的一實施例的金屬遮罩生產設備中，與以往相比進一步減少雷射光束的光斑尺寸，以在金屬箔上直接形成所需尺寸的遮罩孔圖案，與此同時，能夠在同一裝置中簡單地修復在藉由光刻技術製造金屬遮罩時發生的缺陷。 In the metal mask production equipment according to an embodiment of the present invention, the spot size of the laser beam is further reduced compared with the past to form a mask hole pattern of a desired size directly on the metal foil. Defects that occur when a metal mask is manufactured by photolithography are simply repaired in the same device.
可以將照射到待加工物件上的雷射光束的光斑尺寸調節在1μm至5μm的範圍內，還可調整其光斑形狀和光斑間距，因此能夠形成各種遮罩孔圖案。 The spot size of the laser beam irradiated onto the object to be processed can be adjusted within a range of 1 μm to 5 μm, and the spot shape and spot pitch can also be adjusted, so various mask hole patterns can be formed.
可以藉由自動清潔裝置乾淨地去除在使用金屬遮罩生產設備的過程中產生的灰塵，從而能夠生產高品質的金屬遮罩。 The automatic cleaning device can cleanly remove the dust generated during the process of using the metal mask production equipment, so that a high-quality metal mask can be produced.
不僅可以即時確認待加工物件的對準(align)，還可以即時確認加工位置、光學系統焦距的調整及實際加工的形狀等。 Not only the alignment of the object to be processed can be confirmed in real time, but also the processing position, the adjustment of the focal length of the optical system, and the shape of the actual processing can be confirmed in real time.
10‧‧‧雷射器部 10‧‧‧Laser Department
20‧‧‧波束成形器部 20‧‧‧ Beamformer Division
30‧‧‧分束器部 30‧‧‧ Beamsplitter Division
40‧‧‧第一聚光透鏡部 40‧‧‧First condenser lens section
50‧‧‧第二聚光透鏡部 50‧‧‧Second condenser lens section
60‧‧‧抽吸單元 60‧‧‧Suction unit
70‧‧‧相機單元 70‧‧‧ camera unit
80‧‧‧安置部 80‧‧‧ Placement Department
32‧‧‧輸送托台 32‧‧‧Conveying pallet
61‧‧‧腔部 61‧‧‧ Cavity
61(a)‧‧‧貫通孔 61 (a) ‧‧‧through hole
62‧‧‧送風部 62‧‧‧Air Supply Department
62(a)‧‧‧噴射孔 62 (a) ‧‧‧jet hole
62(b)‧‧‧第一管 62 (b) ‧‧‧First tube
63‧‧‧抽吸部 63‧‧‧Suction section
63(a)‧‧‧抽吸孔 63 (a) ‧‧‧Suction hole
63(b)‧‧‧第二管 63 (b) ‧‧‧Second tube
71‧‧‧CCD相機 71‧‧‧CCD camera
72‧‧‧成像鏡頭 72‧‧‧ Imaging Lens
73‧‧‧照明光源 73‧‧‧light source
74‧‧‧照明半反射鏡 74‧‧‧illumination half mirror
90‧‧‧雷射半反射鏡 90‧‧‧laser half mirror
100‧‧‧掃描器部 100‧‧‧Scanner Department
110‧‧‧衰減器 110‧‧‧ attenuator
120‧‧‧雷射鏡 120‧‧‧laser
200‧‧‧待加工物件 200‧‧‧ Objects to be processed
第1圖為本發明的一實施例的金屬遮罩生產設備的概略圖。 FIG. 1 is a schematic diagram of a metal mask production facility according to an embodiment of the present invention.
第2圖為當第1圖的金屬遮罩生產設備在修復模式下操作時的概略圖。 FIG. 2 is a schematic diagram when the metal mask production equipment of FIG. 1 is operated in a repair mode.
第3圖為示出基於模式選擇的分束器部的位置的圖式。 FIG. 3 is a diagram showing the position of the beam splitter section based on the mode selection.
第4圖為示出根據分束器部的軸旋轉改變的雷射光束的形狀的圖式。 FIG. 4 is a diagram showing the shape of a laser beam that changes according to the axis rotation of the beam splitter section.
第5圖為藉由第1圖的金屬遮罩生產設備形成的金屬遮罩的孔圖案的示例圖。 Fig. 5 is a diagram showing an example of a hole pattern of a metal mask formed by the metal mask production equipment of Fig. 1;
第6圖為本發明的一實施例的抽吸單元的概略圖。 Fig. 6 is a schematic view of a suction unit according to an embodiment of the present invention.
第7圖為第6圖的抽吸單元的平面圖。 Fig. 7 is a plan view of the suction unit of Fig. 6.
第8圖為在本發明的一實施例的還包括相機單元的情況下的金屬遮罩生產設備的概略圖。 FIG. 8 is a schematic diagram of a metal mask production facility in a case where a camera unit is further included in an embodiment of the present invention.
下面，在說明本發明時，判斷與本發明相關的習知技術的具體說明為對所屬技術領域具有通常知識者而言是顯而易見的內容且不必需地或混淆本發明的要旨，省略其詳細說明。此處使用的術語僅用於描述特定實施例，並且不預期限制本發明。除非在上下文中具有清楚地不同意思，用於單數的表達包含複數的表達。 In the following, when explaining the present invention, the specific description of judging the conventional technology related to the present invention will be obvious to those having ordinary knowledge in the technical field and needlessly or confuse the gist of the present invention, and the detailed description thereof will be omitted. . The terminology used herein is used only to describe a particular embodiment and is not intended to limit the invention. Unless clearly different in context, expressions for the singular include expressions for the plural.
本申請中使用的“包括”、“具有”等用語表示具有說明書中記載的特徵、數位、步驟、工作、構成要素、構件或其組合產物，而不應理解為排除一個或一個以上的其他特徵、數位、步驟、工作、構成要素、構件或其組合產物的存在或附加可能性。 The terms "including" and "having" used in this application indicate that they have the features, digits, steps, work, constituent elements, components or combinations thereof described in the description, and should not be construed as excluding one or more other features , Digits, steps, work, components, components, or a combination thereof.
下面，參照圖式詳細說明本發明的具體實施例。第1圖為本發明的一實施例的金屬遮罩生產設備的概略圖，第2圖為當第1圖的金屬遮罩生產設備在修復模式下操作時的概略圖，第3圖為示出基於模式選擇的分束器部的位置的圖式，第4圖為示出根據分束器部的軸旋轉改變的雷射光束的形狀的圖式。 Hereinafter, specific embodiments of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic diagram of a metal mask production equipment according to an embodiment of the present invention, FIG. 2 is a schematic diagram when the metal mask production equipment of FIG. 1 is operated in a repair mode, and FIG. 3 is a diagram illustrating FIG. 4 is a diagram showing the position of the beam splitter section based on the mode selection. FIG. 4 is a diagram showing the shape of the laser beam that changes according to the axis rotation of the beam splitter section.
參照第1圖至第4圖，本發明的一實施例的金屬遮罩生產設備可以包括雷射器部10、波束成形器部20、分束器部30、第一聚光透鏡部40、第二聚光透鏡部50、模式設定部(圖中未示出)、抽吸單元60、相機單元70、安置部80等。 Referring to FIGS. 1 to 4, a metal mask production facility according to an embodiment of the present invention may include a laser unit 10, a beamformer unit 20, a beam splitter unit 30, a first condenser lens unit 40, a first Two condenser lens sections 50, a mode setting section (not shown in the drawings), a suction unit 60, a camera unit 70, a mounting section 80, and the like.
雷射器部10使從單一源以脈衝雷射形式產生的雷射光束振盪。此時，通過雷射器部10振盪的雷射光束為單個。另一方面，待加工物件200由稱為不脹鋼(invar)的金屬材料等製成。因此，較佳地，雷射光束較佳為具有比待加工物件200的熱擴散時間更短的脈衝寬度的皮秒或飛秒雷射光束。 The laser unit 10 oscillates a laser beam generated in a pulsed laser form from a single source. At this time, the laser beam oscillated by the laser unit 10 is single. On the other hand, the object to be processed 200 is made of a metal material or the like called invar. Therefore, preferably, the laser beam is preferably a picosecond or femtosecond laser beam having a pulse width shorter than the thermal diffusion time of the object 200 to be processed.
波束成形器部20藉由改變雷射光束的光斑條件來調節雷射光束的形狀。然而，波束成形器部20可以不根據待加工物件200的特性改變光斑條件。光斑條件可以包括光斑尺寸(size)、光斑形狀(shape)及在藉由分束器部30分支成多個光束的雷射光束之間的光斑間距(pitch)。 The beam former 20 adjusts the shape of the laser beam by changing the spot conditions of the laser beam. However, the beamformer section 20 may not change the spot conditions according to the characteristics of the object 200 to be processed. The spot conditions may include a spot size, a spot shape, and a spot pitch between laser beams branched into a plurality of beams by the beam splitter section 30.
例如，波束成形器部20可以包括至少一個以上的平頂(flat top)波束成形器。由此，波束成形器部20可以將雷射光束所具的高斯光束(Gaussian Beam)的能量分佈轉換成平頂的能量分佈。此時，所轉換的雷射光束的強度(intensity)變得均勻，其前端面變得平坦(flat)，並且即使在長距離處也可以具有相當穩定的分佈。並且，波束成形器部20可以將由雷射器部10照射的圓形雷射光束的形狀改變為具有平頂能量分佈的矩形形狀等。 For example, the beamformer section 20 may include at least one or more flat top beamformers. As a result, the beamformer unit 20 can convert the energy distribution of the Gaussian Beam of the laser beam into a flat-topped energy distribution. At this time, the intensity of the converted laser beam becomes uniform, its front end surface becomes flat, and it can have a fairly stable distribution even at long distances. In addition, the beamformer section 20 may change the shape of a circular laser beam radiated by the laser section 10 to a rectangular shape having a flat-top energy distribution, or the like.
並且，波束成形器部20可以使用光學部件來根據構成分束器部30的透鏡規格在一定範圍內可變調節已經固定的光斑間距。而且，波束成形器部20還可包括多焦點透鏡(圖中未示出)，以便可變調節照射到待加工物件200的雷射光束的焦深。尤其，當改變待加工物件200的厚度時，焦深的調節可能有用。並且，這在形成遮罩孔的過程中縮短加工時間。 In addition, the beamformer unit 20 may use an optical component to variably adjust the fixed spot distance within a certain range according to the lens specifications constituting the beam splitter unit 30. Moreover, the beamformer section 20 may further include a multifocal lens (not shown in the figure), so as to variably adjust the focal depth of the laser beam irradiated onto the object 200 to be processed. In particular, when changing the thickness of the object 200 to be processed, adjustment of the focal depth may be useful. Also, this shortens the processing time during the formation of the mask hole.
分束器部30根據選擇將該雷射光束分支成多個光束。例如，該分束器部30可以包括繞射光學元件(diffractive optical element；DOE)鏡頭。也可以以各種其他已知的形式構成。DOE透鏡可以使已經藉由波束成形器部20的雷射光束分支來同時加工多個遮罩孔。另一方面，多個分支雷射光束可以具有特定類型的形狀，例如，排列成一列的直線類型、雷射光束分別佈置在m行和n列內的矩形類型。 The beam splitter section 30 branches the laser beam into a plurality of beams according to the selection. For example, the beam splitter section 30 may include a diffractive optical element (DOE) lens. It can also be constituted in various other known forms. The DOE lens can process a plurality of mask holes simultaneously by branching the laser beam that has been passed through the beamformer section 20. On the other hand, the plurality of branch laser beams may have a specific type of shape, for example, a straight type arranged in one column, and a rectangular type in which the laser beams are arranged in m rows and n columns, respectively.
另一方面，分束器部30可以設置為至少一個以上，且考慮到分支的雷射光束的數量、分支雷射光束的排列形狀及、及分支的雷射光束的構成差異等來可以選擇性地使用任何一個。 On the other hand, the beam splitter unit 30 may be provided with at least one or more, and may be selected in consideration of the number of branched laser beams, the arrangement shape of the branched laser beams, and the difference in the composition of the branched laser beams. Use any one of them.
如上所述，本發明的一實施例的金屬遮罩生產設備可以在藉由習知光刻技術生產的金屬遮罩所存在的缺陷進行修復。為此，金屬遮罩生產設備還可包括模式設定部，該模式設定部除了用於在待加工物件200上形成遮罩孔圖案的加工模式之外還包括用於修復在待加工物件200發生的缺陷的修復模式。 As described above, the metal mask production equipment according to an embodiment of the present invention can repair defects in the metal mask produced by the conventional photolithography technology. To this end, the metal mask production equipment may further include a mode setting section which, in addition to a processing mode for forming a mask hole pattern on the object to be processed 200, also includes a method for repairing Defect repair mode.
分束器部30的使用與否可以根據模式選擇不同。而且，雷射光束的分支與否根據分束器部30是否位於雷射光束的光路上而不同。綜上，分束器部30以在加工模式下位於雷射光束的光路上且在修復模式下從雷射光束的光路脫離的方式進行操作。結果，在同一金屬遮罩生產設備中僅變更模式設定來就可以修復在習知光刻技術中發生的缺陷。 The use of the beam splitter section 30 may be different depending on the mode. The branching of the laser beam differs depending on whether the beam splitter unit 30 is located on the optical path of the laser beam. In summary, the beam splitter unit 30 is operated so as to be located on the optical path of the laser beam in the processing mode and detached from the optical path of the laser beam in the repair mode. As a result, the defects occurring in the conventional photolithography technology can be repaired only by changing the mode setting in the same metal mask production equipment.
另一方面，該分束器部30設置在輸送托台32。輸送托台32以單軸杆(bar)的形式連接到金屬遮罩生產設備的內部。輸送托台32起到在分束器部30移動時引導分束器部30的作用。此時，用於輸送分束器部30的驅動源為線型(linear)馬達部(圖中未示出)。線型馬達部接收電源以使分束器部30在輸送托台32上進行直線往復輸送。 On the other hand, the beam splitter unit 30 is provided on the transport pallet 32. The conveying pallet 32 is connected to the inside of the metal mask production equipment in the form of a single shaft. The conveyance cradle 32 functions to guide the beam splitter section 30 when the beam splitter section 30 moves. At this time, the driving source for transporting the beam splitter section 30 is a linear motor section (not shown in the figure). The linear motor section receives power to cause the beam splitter section 30 to perform linear reciprocating transportation on the transportation pallet 32.
再參照第3圖，在加工模式下，分束器部30被控制成位於雷射光束的光路上(第一位置)。並且，在修復模式下，分束器部30從第一位置被輸送到另一端(第二位置)，使得雷射光束以不經過分束器部30的方式直接通過。 Referring again to FIG. 3, in the processing mode, the beam splitter unit 30 is controlled to be positioned on the optical path (first position) of the laser beam. And, in the repair mode, the beam splitter section 30 is transported from the first position to the other end (second position), so that the laser beam passes directly without passing through the beam splitter section 30.
並且，分束器部30還可包括用於使DOE透鏡軸向旋轉的中空(hollow)馬達部(圖中未示出)。結果，多個分支雷射光束可以具有在一定角度範圍內旋轉的形式。 In addition, the beam splitter section 30 may further include a hollow motor section (not shown) for rotating the DOE lens in the axial direction. As a result, the plurality of branch laser beams may have a form that rotates within a certain angular range.
本發明的金屬遮罩生產設備可以向待加工物件200照射具有1μm至5μm的光斑尺寸的雷射光束。為此，光學系統包括下述的第一聚光透鏡部40和第二聚光透鏡部50等。第一聚光透鏡部40和第二聚光透鏡部50可以壓縮雷射光束，使得雷射光束具有高能量密度。例如，第一聚光透鏡部40可以為管透鏡，第二聚光透鏡部50可以為物鏡。 The metal mask production equipment of the present invention can irradiate the object 200 to be processed with a laser beam having a spot size of 1 μm to 5 μm. To this end, the optical system includes a first condenser lens portion 40 and a second condenser lens portion 50 described below. The first condenser lens portion 40 and the second condenser lens portion 50 can compress the laser beam so that the laser beam has a high energy density. For example, the first condenser lens portion 40 may be a tube lens, and the second condenser lens portion 50 may be an objective lens.
第一聚光透鏡部40對依序藉由波束成形器部20和分束器部30的雷射光束進行聚光。若同時使用第一聚光透鏡部40和第二聚光透鏡部50，則第一聚光透鏡部40的倍率可以根據第二聚光透鏡部50的焦距適當改變。並且，第二聚光透鏡部50對通過第一聚光透鏡部40的雷射光束進行再聚光來將該雷射光束照射到待加工物件200。也就是說，第二聚焦透鏡部50調節照射在待加工物件200上的雷射光束的焦點，並將該雷射光束聚焦在待加工物件200上。 The first condenser lens section 40 condenses the laser beam passing through the beamformer section 20 and the beam splitter section 30 in this order. If the first condenser lens portion 40 and the second condenser lens portion 50 are used at the same time, the magnification of the first condenser lens portion 40 can be appropriately changed according to the focal length of the second condenser lens portion 50. In addition, the second condenser lens unit 50 refocuses the laser beam passing through the first condenser lens unit 40 to irradiate the laser beam to the object 200 to be processed. That is, the second focusing lens portion 50 adjusts the focus of the laser beam irradiated on the object to be processed 200 and focuses the laser beam on the object to be processed 200.
另一方面，第二聚光透鏡部50還可包括多透鏡陣列(圖中未示出)，以便能夠根據待加工物件200的厚度、材料等特性、遮罩孔的規格等不同地選擇倍率。而且，第二聚光透鏡部50可以以線性或旋轉方式等改變多透鏡陣列。 On the other hand, the second condenser lens portion 50 may further include a multi-lens array (not shown in the figure), so that the magnification can be selected differently according to the thickness of the object 200 to be processed, the characteristics of the material and the like, the specifications of the mask hole, and the like. Further, the second condenser lens portion 50 may change the multi-lens array in a linear or rotational manner or the like.
第5圖為藉由第1圖的金屬遮罩生產設備形成的金屬遮罩的孔圖案的示例圖。參照第5圖，可以確認藉由金屬遮罩生產設備在作為待加工物件200的金屬箔上形成由圓形、八邊形等的遮罩孔構成的精細圖案。 Fig. 5 is a diagram showing an example of a hole pattern of a metal mask formed by the metal mask production equipment of Fig. 1; Referring to FIG. 5, it can be confirmed that a fine pattern composed of mask holes such as circles, octagons, and the like is formed on the metal foil as the object 200 to be processed by the metal mask production equipment.
第6圖為本發明的一實施例的抽吸單元的概略圖，第7圖為第6圖的抽吸單元的平面圖。參照第6圖和第7圖，金屬遮罩生產設備還可包括抽吸單元60，該抽吸單元60用於清潔在加工模式或修復模式下由雷射光束的照射產生的微粒灰塵。抽吸單元60佈置在第二聚光透鏡部50與待加工物件200之間，且抽吸單元60吸入在待加工物件200中產生的灰塵並將其排放到外部。 FIG. 6 is a schematic view of a suction unit according to an embodiment of the present invention, and FIG. 7 is a plan view of the suction unit of FIG. 6. Referring to FIGS. 6 and 7, the metal mask production apparatus may further include a suction unit 60 for cleaning particulate dust generated by irradiation of a laser beam in a processing mode or a repair mode. The suction unit 60 is disposed between the second condenser lens portion 50 and the object to be processed 200, and the suction unit 60 sucks dust generated in the object to be processed 200 and discharges it to the outside.
具體而言，抽吸單元60包括腔部61、送風部62、抽吸部63。在腔部61沿上下方向形成有供雷射光束通過的貫通孔61(a)。送風部62包括：至少一個以上的噴射孔62(a)，用於沿產生灰塵的方向噴射壓縮空氣；及第一管62(b)，用於將從外部供應的壓縮空氣移動到噴射孔62(a)。而且，送風部62形成在腔部61內，且藉由該的噴射孔62(a)以從雷射光束的通過方向傾斜預定角度的方式噴射壓縮空氣。為此，噴射孔62(a)與貫通孔61(a)的內側面連通且向下傾斜地形成。 Specifically, the suction unit 60 includes a cavity portion 61, an air blowing portion 62, and a suction portion 63. A through-hole 61 (a) through which a laser beam passes is formed in the cavity portion 61 in the vertical direction. The air blowing unit 62 includes at least one or more spray holes 62 (a) for spraying compressed air in a direction in which dust is generated, and a first pipe 62 (b) for moving the compressed air supplied from the outside to the spray holes 62. (a). Further, the blower portion 62 is formed in the cavity portion 61, and the compressed air is sprayed through the spray hole 62 (a) so as to be inclined at a predetermined angle from the passing direction of the laser beam. For this reason, the injection hole 62 (a) and the inner surface of the through-hole 61 (a) communicate with each other and are formed to be inclined downward.
抽吸部63吸入由於壓縮空氣的噴射飛散的灰塵。為此，抽吸部63包括：抽吸孔63(a)，用於吸入混合有灰塵的混合空氣；及第二管63(b)，將藉由抽吸孔63(a)吸入的混合空氣移動到外部。此時，較佳地，多個抽吸孔63(a)與貫通孔61(a)同心地隔開佈置在腔部61的下面。即，由於藉由自動清潔抽吸單元60可以乾淨地去除灰塵，因此可以生產高品質的金屬遮罩。 The suction unit 63 sucks dust scattered by the jet of compressed air. To this end, the suction section 63 includes a suction hole 63 (a) for sucking mixed air mixed with dust, and a second pipe 63 (b) for the mixed air sucked through the suction hole 63 (a) Move to the outside. At this time, it is preferable that the plurality of suction holes 63 (a) and the through holes 61 (a) are concentrically spaced and disposed under the cavity portion 61. That is, since dust can be cleanly removed by the automatic cleaning suction unit 60, a high-quality metal shield can be produced.
第8圖為在本發明的一實施例的還包括相機單元的情況下的金屬遮罩生產設備的概略圖。參照第8圖，根據一實施例的金屬遮罩生產設備還可包括相機單元70。具體而言，相機單元70包括CCD相機71、成像鏡頭72、照明光源73等。當在照明光源73產生的照明光被引導到待加工物件200時，相機單元70使從待加工物件200反射的照明光藉由成像鏡頭72被引導到CCD相機71，以獲取拍攝圖像。 FIG. 8 is a schematic diagram of a metal mask production facility in a case where a camera unit is further included in an embodiment of the present invention. Referring to FIG. 8, the metal mask production apparatus according to an embodiment may further include a camera unit 70. Specifically, the camera unit 70 includes a CCD camera 71, an imaging lens 72, an illumination light source 73, and the like. When the illumination light generated by the illumination light source 73 is guided to the object 200 to be processed, the camera unit 70 directs the illumination light reflected from the object to be processed 200 to the CCD camera 71 through the imaging lens 72 to acquire a captured image.
另一方面，相機單元70還可包括照明半反射鏡74、自動對焦部(圖中未示出)等。照明半反射鏡74用於反射照明光，且使從待加工物件200反射並 傳遞到CCD相機的可見光透射。此時，反射和透射比率可以根據設計變更等適當改變。並且，自動對焦部校正相機單元70的焦點，使得相機單元70可以拍攝待加工物件200的清晰圖像。 On the other hand, the camera unit 70 may further include an illumination half mirror 74, an autofocus portion (not shown in the figure), and the like. The illumination half mirror 74 is used to reflect the illumination light, and to reflect the light from the object to be processed 200 and Visible light transmitted to a CCD camera. At this time, the reflection and transmission ratios can be appropriately changed according to design changes and the like. In addition, the autofocus section corrects the focus of the camera unit 70 so that the camera unit 70 can take a clear image of the object 200 to be processed.
另一方面，根據一實施例的相機單元70形成為具有與入射到第二聚光透鏡部50的雷射光束的光路同軸的光路。為此，在第二聚光透鏡部50與相機單元70之間還可包括雷射半反射鏡90，該雷射半反射鏡90反射通過第一聚光透鏡部40的雷射光束且使待加工物件200的圖像透射並傳遞到相機單元70。雷射半反射鏡90將雷射光束的光軸與圖像的光軸耦合。結果，不僅可以即時確認待加工物件200的對準，而且可以即時確認加工位置、實際加工的圖像等。 On the other hand, the camera unit 70 according to an embodiment is formed to have an optical path coaxial with the optical path of the laser beam incident on the second condenser lens section 50. To this end, a laser half mirror 90 may be further included between the second condenser lens portion 50 and the camera unit 70, and the laser half mirror 90 reflects the laser beam passing through the first condenser lens portion 40 and makes the The image of the processed object 200 is transmitted and transmitted to the camera unit 70. The laser half mirror 90 couples the optical axis of the laser beam with the optical axis of the image. As a result, not only the alignment of the object to be processed 200 can be confirmed immediately, but also the processing position, the image actually processed, and the like can be confirmed immediately.
再參照第1圖，安置部80供藉由金屬遮罩生產的待加工物件200安置。安置部80包括平板台，且可以在X軸方向和Y軸方向上分別移動，從而可以確定待加工物件200與第二聚光透鏡部50之間的相對位置。並且，安置部80還包括根據待加工物件200的加工厚度調節高度的構成。也就是說，安置部80可以在Z軸方向進行移動。從而，可以在加工待加工物件200的同時升高和降低待加工物件200，因此即使當待加工物件200的厚度方向上的長度長於雷射光束的焦深時，也可以在待加工物件200形成遮罩孔。 Referring to FIG. 1 again, the setting part 80 is used for setting the to-be-processed object 200 produced by the metal mask. The mounting portion 80 includes a flat table and can be moved in the X-axis direction and the Y-axis direction, respectively, so that the relative position between the object to be processed 200 and the second condenser lens portion 50 can be determined. In addition, the mounting portion 80 also includes a structure that adjusts the height according to the processing thickness of the object 200 to be processed. That is, the mounting portion 80 can move in the Z-axis direction. Therefore, the to-be-processed object 200 can be raised and lowered while the to-be-processed object 200 is being processed. Therefore, even when the length in the thickness direction of the to-be-processed object 200 is longer than the focal depth of the laser beam, it can be formed on the to-be-processed object 200. Mask hole.
並且，金屬遮罩生產設備還可包括掃描器部100。掃描器部100使照射到待加工物件200的雷射光束的絕對位置(X-Y座標)改變。例如，該掃描器部100可以為電流計掃描器。電流計掃描器可以包括驅動馬達(圖中未示出)和與驅動馬達的旋轉軸結合並調節雷射光束的照射位置的掃描鏡(圖中未示出)。此時，驅動馬達可以精細地調節，因此能夠精確地移動雷射光束的光斑位置。另一方面，掃描鏡在掃描器部100內部反射雷射光束。 And, the metal mask production equipment may further include a scanner section 100. The scanner unit 100 changes the absolute position (X-Y coordinate) of the laser beam irradiated to the object 200 to be processed. For example, the scanner section 100 may be a galvanometer scanner. The galvanometer scanner may include a driving motor (not shown in the figure) and a scanning mirror (not shown in the figure) that is combined with the rotation axis of the driving motor and adjusts the irradiation position of the laser beam. At this time, the drive motor can be finely adjusted, so the spot position of the laser beam can be accurately moved. On the other hand, the scanning mirror reflects a laser beam inside the scanner section 100.
金屬遮罩生產設備還可包括衰減器(attenuator)110和用於反射雷射光束的至少一個以上的雷射鏡120。衰減器110佈置在雷射光束的移動路徑 上，以調節在雷射器部10振盪的雷射光束的輸出。雷射鏡120藉由反射雷射光束來引導雷射光束的行進方向。然而，雷射鏡120的數量、位置及類型等不限於圖中示出的一實施例。 The metal mask production equipment may further include an attenuator 110 and at least one or more laser mirrors 120 for reflecting a laser beam. The attenuator 110 is arranged in the moving path of the laser beam To adjust the output of the laser beam oscillated in the laser unit 10. The laser mirror 120 guides the traveling direction of the laser beam by reflecting the laser beam. However, the number, position, and type of the laser mirrors 120 are not limited to the embodiment shown in the drawings.
綜上，藉由較佳實施例對本發明進行了具體說明，但本發明的範圍不應限於所述實施例，所屬技術領域具有通常知識者將理解的是，在不背離由以下申請專利範圍所定義的本發明的主旨和範圍的情況下，可以在其中適當做出形式和細節上的各種變化。 In summary, the present invention has been specifically described by the preferred embodiments, but the scope of the present invention should not be limited to the embodiments. Those with ordinary knowledge in the technical field will understand that without departing from the scope of the following patent applications Various changes in form and detail can be appropriately made therein in the context of defining the spirit and scope of the present invention.
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| KR10-2018-0098023 | 2018-08-22 | ||
| KR1020180098023A KR102100361B1 (en) | 2018-08-22 | 2018-08-22 | Apparatus for producing of metal mask |
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| TW202009977A TW202009977A (en) | 2020-03-01 |
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| TWI744135B (en) * | 2020-12-15 | 2021-10-21 | 鈦昇科技股份有限公司 | Multi-focus laser forming method of through hole |
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| CN113500313A (en) * | 2021-06-23 | 2021-10-15 | 济南森峰科技有限公司 | Laser high-speed dislocation punching method with dynamic Z-axis movement |
| KR102495826B1 (en) * | 2022-04-11 | 2023-02-06 | 에이피에스머티리얼즈(주) | Mask manufacturing method based on multi-layer laser irrdation |
| WO2024117178A1 (en) * | 2022-11-29 | 2024-06-06 | 古河電気工業株式会社 | Portable laser surface processing device and laser surface processing system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291012A (en) * | 1991-04-30 | 1994-03-01 | Isao Shimizu | High resolution optical microscope and irradiation spot beam-forming mask |
| US20090032510A1 (en) * | 2005-06-01 | 2009-02-05 | Phoeton Corp. | Laser Processing Apparatus and Laser Processing Method |
| TWI413564B (en) * | 2009-03-25 | 2013-11-01 | Samsung Display Co Ltd | Substrate cutting apparatus and method of cutting substrate using the same |
| KR20150035131A (en) * | 2013-09-27 | 2015-04-06 | 삼성디스플레이 주식회사 | Metal mask, apparatus for manufacturing metal mask, and method for manufacturing metal mask |
| TW201740212A (en) * | 2016-02-18 | 2017-11-16 | Shanghai Micro Electronics Equipment (Group) Co Ltd | Exposure system, exposure device and exposure method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100879007B1 (en) * | 2008-02-21 | 2009-01-15 | 주식회사 코윈디에스티 | Repair device having a capacity of automated optical inspection |
| KR20100057266A (en) * | 2008-11-21 | 2010-05-31 | 엘지디스플레이 주식회사 | Shadow mask inspection apparatus with repairing function and methode of inspecting the shadow mask using the same |
| KR101176475B1 (en) * | 2011-06-23 | 2012-08-28 | 주식회사 코윈디에스티 | Dic optics for amoled repair |
| KR101267220B1 (en) | 2011-10-06 | 2013-05-24 | 주식회사 엘티에스 | Method For Manufacturing Mask Using Laser |
| KR101582161B1 (en) | 2014-12-17 | 2016-01-05 | 에이피시스템 주식회사 | 3-D patterning method using Laser |
| KR101582175B1 (en) * | 2015-03-17 | 2016-01-05 | 에이피시스템 주식회사 | Manufacturing device and method of shadow mask using Laser patterning |
| KR101882232B1 (en) * | 2017-12-06 | 2018-07-26 | 주식회사 제이스텍 | Laser processing scanner head combined with laser and air suction ball |
-
2018
- 2018-08-22 KR KR1020180098023A patent/KR102100361B1/en active IP Right Grant
- 2018-08-30 JP JP2019561751A patent/JP6842135B2/en active Active
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5291012A (en) * | 1991-04-30 | 1994-03-01 | Isao Shimizu | High resolution optical microscope and irradiation spot beam-forming mask |
| US20090032510A1 (en) * | 2005-06-01 | 2009-02-05 | Phoeton Corp. | Laser Processing Apparatus and Laser Processing Method |
| TWI413564B (en) * | 2009-03-25 | 2013-11-01 | Samsung Display Co Ltd | Substrate cutting apparatus and method of cutting substrate using the same |
| KR20150035131A (en) * | 2013-09-27 | 2015-04-06 | 삼성디스플레이 주식회사 | Metal mask, apparatus for manufacturing metal mask, and method for manufacturing metal mask |
| TW201740212A (en) * | 2016-02-18 | 2017-11-16 | Shanghai Micro Electronics Equipment (Group) Co Ltd | Exposure system, exposure device and exposure method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI744135B (en) * | 2020-12-15 | 2021-10-21 | 鈦昇科技股份有限公司 | Multi-focus laser forming method of through hole |
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| WO2020040339A1 (en) | 2020-02-27 |
| TW202009977A (en) | 2020-03-01 |
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| KR102100361B1 (en) | 2020-04-13 |
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