TWI677902B - Method for forming hard mask, device for forming hard mask, and memory medium - Google Patents

Abstract

Provides hard cover that reduces restrictions on hard mask materials A method for forming a mask, a device for forming a hard mask, and a memory medium.

The substrate (W) on which the non-platable material portion (31) and the plateable material portion (32) are formed on the surface is subjected to a catalyst application process, so that the plateable material portion (32) is selectively provided with a catalyst. Next, by subjecting the substrate (W) to a plating treatment, a hard mask layer (35) is selectively formed on the plateable material portion (32). The non-platable material portion (31) is composed of SiO ₂ as a main component, and the non-platable material portion (32) is composed of a material containing at least one of an OCHx group and an NHx group, a metal material mainly composed of Si, and carbon The main component material or catalyst metal material is used as the main component.

Description

Method for forming hard mask, device for forming hard mask, and memory medium

The present invention relates to a method for forming a hard mask, a device for forming a hard mask, and a memory medium.

In recent years, with the development of miniaturization or three-dimensionalization of semiconductor devices, it is required to improve processing accuracy caused by etching when processing semiconductor devices. As a result, as one of the methods for improving the processing accuracy caused by etching, the demand for improving the accuracy of the hard mask (HM) for dry etching formed on the substrate is increasing.

Conventionally, a hard mask is formed on a substrate in the following steps, for example. First, a hard mask material such as SiN (silicon nitride film) or TiN (titanium nitride) is formed on the substrate, and then a resist layer having a specific pattern is formed on the hard mask material. Next, the hard mask material that is not covered by the resist is removed by dry etching, and a hard mask having a specific pattern is formed on the substrate. Then, a portion of the substrate that is not covered by the hard mask is removed by dry etching. After that, the hard mask is removed by a wet cleaning method or the like.

[Prior technical literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2009-249679

However, conventional materials for hard masks covering substrates have various limitations. In view of such limitations, for example, (1) the hard mask and the substrate have high adhesion, (2) the hard mask and the resist have high adhesion, and (3) The heat treatment when the layer is patterned makes the hard mask material difficult to affect. (4) When the hard mask is etched, it is difficult to remove the resist layer. (5) When the substrate is dry-etched, the hard mask The mask is difficult to remove. (6) After the substrate is dry-etched, the hard mask can be easily removed. Therefore, conventionally, as the material of the hard mask, only the restricted materials such as SiN (silicon nitride) or TiN (titanium nitride) have been used.

The present invention was conceived by the creators to provide a method for forming a hard mask, a device for forming a hard mask, and a memory medium, which can reduce restrictions on the materials of the hard mask.

The method for forming a hard mask according to an embodiment of the present invention is characterized in that it includes a process of preparing a substrate on which a non-platable material portion and a plateable material portion are formed on a surface; and a catalyst is provided on the substrate. A process of selectively providing a catalyst to the above-mentioned plateable material portion; and a process of selectively forming a hard mask layer on the above-mentioned plateable material portion by applying a plating treatment to the substrate, which cannot be plated as described above. The coating material portion is mainly composed of SiO ₂ , and the above-mentioned plateable material portion is composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material mainly containing Si, a catalyst metal material, or carbon The main component material is used as the main component.

A device for forming a hard mask according to an embodiment of the present invention is characterized by including a substrate holding portion that holds a substrate on the surface of which a non-platable material portion and a plateable material portion are formed; a catalyst application portion, It is a catalyst-imparting process for the substrate, and selectively imparts a catalyst to the plateable material part; and a plating liquid supply section for supplying a plating solution to the substrate, the The hard mask layer is selectively formed on the coating material. The non-platable material is mainly composed of SiO ₂ , and the plateable material is made of a material containing at least one of OCH _x group and NH _x group. A metal material containing Si as a main component, a catalyst metal material, or a material containing carbon as a main component is used as a main component.

When the above-mentioned implementation mode of the present invention is adopted, the restriction on the material of the hard mask can be reduced.

1‧‧‧Plating treatment device

2‧‧‧Plating treatment unit

3‧‧‧Control Department

5‧‧‧Plating treatment department

31‧‧‧ Cannot be plated

32‧‧‧Plating material

33‧‧‧Photoresistive film

35‧‧‧hard mask layer

41‧‧‧core

42‧‧‧ substrate

43‧‧‧ middle layer

51‧‧‧ chamber

52‧‧‧ substrate holding section

53‧‧‧Plating solution supply department

54‧‧‧ Nozzle moving mechanism

55a‧‧‧ Catalyst liquid supply department

55b‧‧‧washing liquid supply department

55c‧‧‧Flushing liquid supply department

56‧‧‧ Nozzle moving mechanism

57‧‧‧ cup body

58‧‧‧Lifting mechanism

FIG. 1 is a schematic plan view showing the configuration of a plating processing apparatus and a plating processing unit provided in the plating processing apparatus.

FIG. 2 shows a plating process provided in the plating processing unit shown in FIG. 1. A schematic cross-sectional view of the structure of a unit (a device for forming a hard mask).

FIG. 3 is a schematic cross-sectional view showing a configuration of a substrate on which a hard mask layer is formed by the method for forming a hard mask according to the embodiment.

4 (a) to (e) are schematic cross-sectional views showing a method for manufacturing a substrate for forming a hard mask layer by the method for forming a hard mask according to the embodiment.

5 (a) to 5 (b) are schematic cross-sectional views showing a method for forming a hard mask according to the embodiment.

6 (a) to 6 (c) are schematic cross-sectional views showing a method of processing a substrate on which a hard mask layer is formed by the method for forming a hard mask according to the embodiment.

7 (a) to (h) are schematic cross-sectional views showing a modified example of the embodiment.

8 (a) to (h) are schematic cross-sectional views showing a modification example of a method for manufacturing a substrate for forming a hard mask layer.

9 (a) to (h) are schematic cross-sectional views showing a modified example of a method for manufacturing a substrate for forming a hard mask layer.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[Configuration of Plating Treatment Device]

Referring to FIG. 1, a plating place related to an embodiment of the present invention will be described. The structure of the management device. FIG. 1 is a schematic diagram showing a configuration of a plating treatment apparatus according to an embodiment of the present invention.

As shown in FIG. 1, a plating processing apparatus 1 according to an embodiment of the present invention includes a plating processing unit 2 and a control unit 3 that controls the operation of the plating processing unit 2.

The plating processing unit 2 performs various processes on the substrate. Various processes performed on the plating processing unit 2 will be described later.

The control unit 3 is, for example, a computer, and includes an operation control unit and a memory unit. The operation control unit is composed of, for example, a CPU (Central Processing Unit), and reads out and executes a program stored in the memory unit to control the operation of the plating processing unit 2. The memory unit is composed of a memory device such as a RAM (Random Access Memory), a ROM (Read Only Memory), a hard disk, and the like, and stores various processing programs executed in the plating processing unit 2. In addition, even if the program is recorded in a storage medium that can be read by a computer, even if the program is installed in the storage section from the storage medium. Examples of the storage medium that can be read by a computer include a hard disk (HD), a flexible disk (FD), an optical disk (CD), a magneto-optical disk (MO), and a memory card. In the recording medium, for example, when executed by a computer for controlling the operation of the plating processing apparatus 1, the computer controls the plating processing apparatus 1 to execute a program for a plating processing method described later.

[Composition of plating processing unit]

The configuration of the plating processing unit 2 will be described with reference to FIG. 1. FIG. 1 is a schematic cross-sectional view showing the configuration of a plating processing unit 2.

The plating processing unit 2 includes a loading / unloading station 21 and a processing station 22 provided adjacent to the loading / unloading station 21.

The loading / unloading station 21 includes a mounting section 211 and a transporting section 212 provided adjacent to the mounting section 211.

A plurality of transport containers (hereinafter, referred to as "carrier C") that accommodates a plurality of substrates W in a horizontal state are placed on the placing section 211.

The transport unit 212 includes a transport mechanism 213 and a receiving unit 214. The conveyance mechanism 213 is provided with the holding mechanism which holds the board | substrate W, and is comprised so that it can move to a horizontal direction and a vertical direction, and it can rotate about a vertical axis.

The processing station 22 includes a plating processing unit 5. In this embodiment, although the number of the plating treatment sections 5 included in the processing station 22 is two or more, it may be one. The plating treatment sections 5 are arranged on both sides of the conveyance path 221 extending in a specific direction.

A transport mechanism 222 is provided on the transport path 221. The transport mechanism 222 includes a holding mechanism that holds the substrate W, and is configured to be movable in the horizontal and vertical directions and to rotate about the vertical axis.

In the plating processing unit 2, the transfer mechanism 213 of the transfer-in / out station 21 transfers the substrate W between the carrier C and the receiving unit 214. Specifically, the conveyance mechanism 213 takes out the substrate W from the carrier C placed on the placing section 211, and places the taken-out substrate W on the receiving section 214. In addition, the transfer mechanism 213 removes the substrate W placed on the receiving and receiving unit 214 by the transfer mechanism 222 of the processing station 22 and stores the substrate C in the loading unit 211.

In the plating processing unit 2, the transport mechanism 222 of the processing station 22 is between the receiving and receiving unit 214 and the plating processing unit 5, and the plating processing unit 5 and the receiving unit The transfer unit 214 carries the substrate W between them. Specifically, the conveyance mechanism 222 takes out the substrate W0 placed on the receiving and receiving unit 214 and carries the taken-out substrate W into the plating processing unit 5. The conveyance mechanism 222 takes out the substrate W from the plating processing unit 5 and places the taken-out substrate W on the receiving unit 214.

[Configuration of Plating Treatment Section]

Next, the configuration of the plating processing unit 5 (hard mask forming device) will be described with reference to FIG. 2. FIG. 2 is a schematic cross-sectional view showing the configuration of the plating treatment section 5.

The plating treatment unit 5 selectively forms a hard mask layer 35 on the plateable material portion by subjecting the substrate W on which the non-platable material portion 31 and the plateable material portion 32 are formed on the surface (refer to FIG. 3 to 6 described later). The substrate processing performed by the plating processing unit 5 includes at least a catalyst providing process and an electroless plating process, but may include a substrate processing other than the catalyst providing process and the plating process.

The plating processing unit 5 is a substrate processor who performs the above-mentioned electroless plating process, and includes a chamber 51, a substrate holding portion 52 disposed in the chamber 51, which holds the substrate W, and a pair of substrate holding portions 52 held in the substrate holding portion 52. The substrate W is supplied with a plating solution supply unit 53 of the plating solution M1.

Among them, the substrate holding portion 52 includes a rotation shaft 521 extending vertically in the cavity 51, a turntable 522 mounted on the upper end of the rotation shaft 521, and an outer peripheral portion provided on the upper surface of the turntable 522 to support the substrate A pan plate 523 at the outer edge portion, and a driving portion 524 that rotationally drives the rotation shaft 521.

The substrate W is supported by the pan 523 and is held horizontally on the turntable 522 in a state spaced slightly from the upper surface of the turntable 522. In this embodiment, the holding method of the substrate W generated by the substrate holding portion 52 is a so-called mechanical disk type that holds the outer edge portion of the substrate W by a movable disk 523, but even if it is a vacuum suction substrate The so-called vacuum pan type on the back of W may also be used.

A base end portion of the rotation shaft 521 is rotatably supported by a driving portion 524, and a front end portion of the rotation shaft 521 horizontally supports the turntable 522. When the rotation shaft 521 rotates, the turntable 522 mounted on the upper end of the rotation shaft 521 rotates, and accordingly, the substrate W held on the turntable 522 rotates while being supported by the pan 523.

The plating solution supply unit 53 includes a nozzle 531 that discharges the plating solution M1 to the substrate W held by the substrate holding portion 52, and a plating solution supply source 532 that supplies the plating solution M1 to the nozzle 531. The plating solution M1 is stored in a liquid tank provided in the plating solution supply source 532, and is supplied from the plating solution supply source 532 to the nozzle 531 through a supply line 534 provided with a flow regulator such as a valve 533 in the middle thereof Plating solution M1.

The plating solution M1 is a plating solution for self-catalytic (reduction) electroless plating. The plating solution M1 contains metal ions such as cobalt (Co) ions, nickel (Ni) ions, tungsten (W) ions, and reducing agents such as hypophosphorous acid and dimethylamine borane. In addition, in the self-catalyst type (reduction type) electroless plating, metal ions in the plating solution M1 are reduced by the electrons released by the oxidation reaction of the reducing agent in the plating solution M1 and precipitated as metal. To form a metal film (plating film). The plating solution M1 may include an additive or the like. Make Examples of the metal film (plating film) produced by the plating treatment using the plating solution M1 include CoB, CoP, CoWP, CoWB, CoWBP, NiWB, NiB, NiWP, and NiWBP. P in the metal film (plating film) is derived from a reducing agent containing P (for example, hypophosphorous acid), and B in the plating film is derived from a reducing agent containing B (for example, dimethylamine borane).

The nozzle 531 is connected to the nozzle moving mechanism 54. The nozzle moving mechanism 54 drives the nozzle 531. The nozzle moving mechanism 54 includes a robot arm 541, a moving body 542 of a built-in driving mechanism that can move along the robot arm 541, and a rotation lifting mechanism 543 that rotates and lifts the robot arm 541. The nozzle 531 is attached to the moving body 542. The nozzle moving mechanism 54 can move the nozzle 531 between a position above the center of the substrate W held by the substrate holding portion 52 and a position above the periphery of the substrate W, and can be moved to a position described later in plan view. Stand-by position on the outside of the cup 57.

In the chamber 51, a catalyst liquid supply unit (catalyst supplying unit) 55a, which supplies the catalyst liquid N1, the cleaning liquid N2, and the rinse liquid N3, to the substrate W held by the substrate holding portion 52, and is cleaned. The liquid supply unit 55b and the rinse liquid supply unit 55c.

The catalyst liquid supply unit (catalyst supply unit) 55a includes a nozzle 551a that discharges the catalyst liquid N1 to the substrate W held by the substrate holding portion 52, and a catalyst liquid supply source 552a that supplies the catalyst liquid N1 to the nozzle 551a. The catalyst liquid N1 is stored in a liquid tank provided in the catalyst liquid supply source 552a, and is supplied from the catalyst liquid supply source 552a to the nozzle 551a through a supply line 554a provided with a flow regulator such as a valve 553a in the middle. Catalyst liquid N1.

The cleaning liquid supply section 55b includes a pair of substrates held in the substrate holding section 52. The substrate W has a nozzle 551b for discharging the cleaning liquid N2, and a cleaning liquid supply source 552b for supplying the cleaning liquid N2 to the nozzle 551b. The cleaning liquid N2 is stored in a liquid tank provided in the cleaning liquid supply source 552b, and is supplied from the cleaning liquid supply source 552b to the nozzle 551b through a supply line 554b provided with a flow regulator such as a valve 553b in between. Washing liquid N2.

The rinsing liquid supply unit 55c includes a nozzle 551c that discharges the rinsing liquid N3 to the substrate W held by the substrate holding portion 52, and a rinsing liquid supply source 552c that supplies the rinsing liquid N3 to the nozzle 551c. The flushing liquid N3 is stored in a liquid tank provided in the flushing liquid supply source 552c, and the flushing liquid N3 is supplied from the flushing liquid supply source 552c through a supply line 554c provided with a flow regulator such as a valve 553c at the valve 551c. .

The catalyst liquid N1 contains metal ions having a catalytic activity with respect to the oxidation reaction of the reducing agent in the plating solution M1. In the electroless plating process, in order to start the precipitation of metal ions in the plating solution M1, the initial coating surface (that is, the plated surface of the substrate) needs to be oxidized with respect to the reducing agent in the plating solution M1. Has sufficient catalytic activity. Examples of such a catalyst include those containing an iron group element (Fe, Co, Ni), a platinum group metal element (Ru, Rh, Pd, Os, Ir, Pt), Cu, Ag, or Au. The formation of a catalytically active metal film is generated by a displacement reaction. In the substitution reaction, a component constituting the plated surface of the substrate becomes a reducing agent, and metal ions (for example, Pd ions) in the catalyst liquid N1 are reduced and precipitated on the plated surface of the substrate. In addition, as the catalyst liquid N1, a nano-particle metal catalyst may be included. Specifically, the catalyst liquid N1 may include a nano-particle metal catalyst, a dispersant, and an aqueous solution. As such nano particles Examples of the metallic catalyst include nano particles of Pd.

As the cleaning liquid N2, for example, organic acids such as formic acid, malic acid, succinic acid, citric acid, and malonic acid, and hydrofluoric acid (to be diluted to a concentration not to corrode the plated surface of the substrate) DHF) (aqueous solution of hydrogen fluoride) and the like.

As the rinse liquid N3, for example, pure water can be used.

The plating processing unit 5 includes a nozzle moving mechanism 56 that drives the nozzles 551a to 551c. The nozzle moving mechanism 56 includes a robot arm 561, a moving body 562 of a built-in driving mechanism capable of moving along the robot arm 561, and a rotation lifting mechanism 563 for rotating and lifting the robot arm 561. The nozzles 551a to 551c are attached to the moving body 562. The nozzle moving mechanism 56 can move the nozzles 551a to 551c between a position above the center of the substrate W held on the substrate holding portion 52 and a position above the periphery of the substrate W, and can be moved in a plan view. It is located in a standby position outside the cup 57 described later. In this embodiment, although the nozzles 551a to 551c are held by a common robot arm, they can be independently moved even if they are individually held by different robot arms.

A cup body 57 is arranged around the substrate holding portion 52. The cup body 57 receives various processing liquids (for example, a plating liquid, a cleaning liquid, a rinsing liquid, and the like) scattered from the substrate W and discharges them outside the chamber 51. The cup body 57 includes a lifting mechanism 58 that drives the cup body 57 in the vertical direction.

[Composition of substrate]

Next, a method for forming a hard mask generated by this embodiment The configuration of the substrate on which the hard mask layer is formed will be described.

As shown in FIG. 3, the substrate W on which the hard mask layer is formed has a non-platable material portion 31 and a plateable material portion 32 formed on the surface thereof, respectively. It is only necessary that the non-platable material portion 31 and the plateable material portion 32 are exposed on the surface side of the substrate W, regardless of their specific configurations. In the present embodiment, the substrate W has a base material 42 composed of a plateable material portion 32, a core protrudingly provided on the base material 42, and a patterned non-platable material portion 31.材 41。 Material 41.

The non-platable material portion 31 is a region where no plating metal is substantially precipitated and the hard mask layer 35 is not formed when the plating treatment generated in the embodiment is applied. In this case, the non-platable material portion 31 is made of a material containing SiO ₂ as a main component.

When the plateable material portion 32 is subjected to the plating treatment according to the embodiment, the plated metal is selectively deposited to form a region of the hard mask layer 35. In this embodiment, the plateable material portion 32 is composed of (1) a material containing at least one of an OCH _x group and an NH _x group, (2) a metal material containing a Si-based material as a main component, and (3) Either a catalyst metal material-based material or (4) a carbon-based material.

(1) In the case where the material that can be plated material portion 32 contains a material containing at least one of an OCHx group and an NHx group as a main component, examples of the material include a Si-OCHx group or a Si-NHx group Material, such as SiOCH or SiN.

(2) The material of the plateable material portion 32 is a Si-based material In the case of a metal material having a material as a main component, examples of the material capable of plating the material portion 32 include Poly-Si, Poly-Si, and Si doped with B or P.

(3) In the case where the material capable of plating material portion 32 has a material containing a catalytic metal material as a main component, examples of the material capable of plating material portion 32 include Cu and Pt.

(4) In the case where the material capable of being plated material 32 contains carbon as a main component, as the material capable of being plated material portion 32, for example, amorphous carbon is mentioned.

Next, a method of manufacturing the substrate W shown in FIG. 3 will be described. When the substrate W shown in FIG. 3 is produced, first, as shown in FIG. 4 (a), a base material 42 composed of a plateable material portion 32 is prepared. As described above, the base material 42 is composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material containing a Si-based material as a main component, a catalyst metal material, or a material containing a carbon as a main component. Made of materials.

Next, as shown in FIG. 4 (b), the entire surface of the base material 42 composed of the plateable material portion 32 is formed into a material constituting the non-platable material portion 31 by, for example, the CVD method or the PVD method. 31a. As described above, the material 31a is made of a material containing SiO ₂ as a main component.

Next, as shown in FIG. 4 (c), the entire surface of the material 31a constituting the non-platable material portion 31 is coated with a photosensitive resist 33a and dried. Next, as shown in FIG. 4 (d), the photosensitive resist layer 33 a is exposed and developed through a photomask to form a photoresist film 33 having a desired pattern.

Thereafter, as shown in FIG. 4 (e), the photoresist film 33 is applied. The material 31a is dry-etched by masking. Accordingly, the core material 41 composed of the non-platable material portion 31 is patterned into a shape that is slightly the same as the pattern shape of the photoresist film 33. Thereafter, by removing the photoresist film 33, a substrate W having a non-platable material portion 31 and a plateable material portion 32 formed on the surface can be obtained.

(How to form a hard mask)

Next, a method for forming a hard mask using the plating treatment apparatus 1 will be described. The method for forming a hard mask performed by the plating processing apparatus 1 includes a plating process for the substrate W described above. The plating process is performed by a plating process part (hard mask forming device) 5. The operation of the plating treatment section 5 is controlled by the control section 3.

First, for example, by the method shown in FIGS. 4 (a) to (e), a substrate W is formed on the surface of which the non-platable material portion 31 and the plateable material portion 32 are formed (see FIG. 5 (a)).

Then, the substrate W thus obtained is carried into the plating processing section 5 and is held in the substrate holding section 52 (see FIG. 2). During this period, the control unit 3 controls the lifting mechanism 58 to lower the cup 57 to a specific position. Next, the control unit 3 controls the conveyance mechanism 222 to place the substrate W on the substrate holding unit 52. The substrate W is horizontally held on the turntable 522 in a state where the outer edge portion is supported by the pan 523.

Next, the substrate W held by the substrate holding portion 52 is cleaned. At this time, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a specific speed, while controlling the cleaning liquid supply unit 55b so that the nozzle 551b is positioned above the substrate W, and the nozzle 551b faces base The plate W is supplied with a cleaning solution N2. The cleaning liquid N2 supplied to the substrate W is diffused on the surface of the substrate W by a centrifugal force following the rotation of the substrate W. As a result, the attached matter or the like attached to the substrate W is removed from the substrate W. The cleaning liquid N2 scattered from the substrate W is discharged through the cup 57.

Next, the cleaned substrate W is rinsed. At this time, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a specific speed, and controls the rinse liquid supply unit 55c so that the nozzle 551c is positioned above the substrate W, and the substrate is faced from the nozzle 551c to the substrate. W Supply rinse solution N3. The rinse liquid N3 supplied to the substrate W is diffused on the surface of the substrate W by a centrifugal force following the rotation of the substrate W. Accordingly, the cleaning liquid N2 remaining on the substrate W is rinsed. The rinse liquid N3 scattered from the substrate W is discharged through the cup 57.

Next, a catalyst application process is performed on the washed substrate W. At this time, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a specific speed, while controlling the catalyst liquid supply unit 55a so that the nozzle 551a is positioned above the substrate W, and the nozzle 551a The substrate W is supplied with a catalyst liquid N1. The catalyst liquid N1 supplied to the substrate W is diffused on the surface of the substrate W by a centrifugal force following the rotation of the substrate W. The catalyst liquid N1 scattered from the substrate W is discharged through the cup 57.

Accordingly, a catalyst is selectively imparted to the plateable material portion 32 of the substrate W, and a metal film having a catalyst activity is formed on the plateable material portion 32. In addition, in the substrate W, the non-platable material portion 31 containing SiO ₂ as a main component is not substantially provided with a catalyst, and a metal film having a catalyst activity is not formed. Examples of the metal having such a catalytic activity include an iron group element (Fe, Co, Ni), a platinum group metal element (Ru, Rh, Pd, Os, Ir, Pt), Cu, Ag, or Au. Each of the above-mentioned metals has high adsorptivity with respect to the material constituting the plateable material portion 32 (for example, a material containing at least one of an OCH _x group and an NH _x group), and also with respect to the material constituting the non-platable material portion 31. The material's SiO _{2 is} difficult to adsorb. Therefore, by using each of the above metals, the plated metal can be selectively deposited on the plateable material portion 32. The catalyst liquid N1 may include an adsorption promoter that promotes adsorption of a metal having the above-mentioned catalytic activity.

Next, the substrate W which is selectively provided with the catalyst to the plateable material portion 32 is rinsed. During this period, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a specific speed, while controlling the rinse liquid supply unit 55c so that the nozzle 551c is positioned above the substrate W, and the nozzle 551c The substrate W is supplied with a rinse liquid N3. The rinse liquid N3 supplied to the substrate W is diffused on the surface of the substrate W by a centrifugal force following the rotation of the substrate W. Accordingly, the catalyst liquid N1 remaining on the substrate W is rinsed. The rinse liquid N3 scattered from the substrate W is discharged through the cup 57.

Next, the substrate W is subjected to a plating treatment, and the plateable material portion 32 is selectively plated. Accordingly, a hard mask layer 35 is formed on the plateable material portion 32 (see FIG. 5 (b)). The hard mask layer 35 is formed in a portion of the plateable material portion 32 where the plateable material portion 31 is not provided. At this time, the control unit 3 controls the driving unit 524 to control the plating solution while rotating the substrate W held by the substrate holding unit 52 at a specific speed or while maintaining the state where the substrate W held by the substrate holding unit 52 is stopped. The supply unit 53 positions the nozzle 531 above the substrate W, and faces the substrate W from the nozzle 531 A plating solution M1 is supplied. Accordingly, the plated metal is selectively deposited on the plateable material portion 32 of the substrate W (specifically, a metal film having a catalytic activity formed on the surface of the plateable material portion 32) to form a hard mask. Layer 35. In addition, the plated material portion 31 in the substrate W does not form a metal film having a catalytic activity, so the plated metal is not substantially deposited, and the hard mask layer 35 is not formed.

Such a hard mask layer 35 is made of Co, Co alloy, or Ni-based material containing B or P as a main component. Among them, examples of Co and Co alloys including B or P include CoB, CoP, CoWP, CoWB, and CoWBP. Examples of the Ni-based materials include NiWB, NiB, NiWP, and NiWBP.

In this way, after the plating process is completed, the substrate W held by the substrate holding portion 52 is cleaned. At this time, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a specific speed, while controlling the cleaning liquid supply unit 55b so that the nozzle 551b is positioned above the substrate W, and the nozzle 551b faces The substrate W is supplied with a cleaning liquid N2. The cleaning liquid N2 supplied to the substrate W is diffused on the surface of the substrate W by a centrifugal force following the rotation of the substrate W. Accordingly, the abnormal plating film, reaction by-products, and the like adhered to the substrate W are removed from the substrate W. The cleaning liquid N2 scattered from the substrate W is discharged through the cup 57.

Next, the control unit 3 controls the driving unit 524 to rotate the substrate W held by the substrate holding unit 52 at a predetermined speed, while controlling the rinse liquid supply unit 55c so that the nozzle 551c is positioned above the substrate W, and the substrate W is directed from the nozzle 551c to the substrate W. Supply the rinse liquid N3. Accordingly, the plating solution on the substrate W M1, the washing liquid N2, and the washing liquid N3 are scattered from the substrate W by the centrifugal force following the rotation of the substrate W, and are discharged through the cup 57.

After that, the substrate W on which the hard mask layer 35 is formed is carried out from the plating processing section 5. At this time, the control unit 3 controls the conveying mechanism 222, takes out the substrate W from the plating processing unit 5, and places the taken-out substrate W in the receiving and receiving unit 214, and at the same time controls the conveying mechanism 213 to take out the portion of the receiving and receiving unit 214 The substrate W is stored in the carrier C of the mounting portion 211.

Next, the substrate W removed from the plating processing section 5 is selectively removed, and the non-platable material portion 31 (FIG. 6 (a)). The hard mask layer 35 formed on the plateable material portion 32 remains without being removed. In this way, a substrate W having a base material 42 composed of a plateable material portion 32 and a pattern-shaped hard mask layer 35 on the base material 42 can be obtained. The area of the base material 42 that is not covered by the hard mask layer 35 exposes the base material 42 (the plateable material portion 32).

Next, as shown in FIG. 6 (b), the hard mask layer 35 is masked, and the base material 42 composed of the plateable material portion 32 is dry-etched. Accordingly, the portion of the base material 42 that is not covered by the hard mask layer 35 is etched to a specific depth to form a pattern-shaped recess.

Thereafter, as shown in FIG. 6 (c), the hard mask 35 is removed by a wet cleaning method, and thus a base material 42 forming a pattern-shaped recessed portion can be obtained. In addition, since the hard mask layer 35 can be removed by a wet cleaning method, the hard mask layer 35 can be easily removed. As a chemical solution used in such a wet washing method, an acidic solvent is used.

As explained above, if this embodiment is used, The substrate W is subjected to a catalyst-imparting treatment, and a catalyst is selectively imparted to the plateable material portion 32. Thereafter, a hard mask is selectively formed on the plateable material portion 32 by applying a plating treatment to the substrate W.壳层 35。 Cover layer 35. In this way, by not requiring a pattern transfer process for the hard mask, the process of forming the hard mask can be simplified, and at the same time, the poor shape of the pattern of the hard mask can be suppressed when the hard mask is formed. Furthermore, there is no risk that the material of the hard mask is affected by the heat treatment when the photoresist layer is patterned.

Furthermore, if the hard mask layer 35 is formed by plating in this embodiment, the hard mask layer 35 can be formed thicker by increasing the thickness of the plating. Accordingly, even in dry etching, the hard mask layer 35 is etched in accordance with the hard mask layer 35, and the hard mask layer 35 may be left at the end of the etching.

In addition, if the photoresist is not formed on the hard mask layer 35 in this embodiment, only the materials constituting the hard mask layer 35 and the material of the base material 42 (the material capable of being plated 32) are considered. Adhesiveness is sufficient, and it is not necessary to consider the adhesiveness of the material constituting the hard mask layer 35 and the photoresist material. Therefore, restrictions on the material of the hard mask layer 35 are reduced, and various materials can be selected.

Modification of hard mask forming method

Next, a modified example of the method for forming a hard mask will be described with reference to Figs. 7 (a) to (h). 7 (a) to (h) are diagrams showing a method of forming a hard mask according to the present modification. In the modified examples shown in FIGS. 7 (a) to (h), the main point is that the base material 42 is composed of the non-platable material portion 31 and the core material 41 is composed of the non-platable material portion 32. real Application types are different.

As shown in FIG. 7 (a), first, a base material 42 composed of a non-platable material portion 31 mainly containing SiO _{2 is} prepared. Next, as shown in FIG. 7 (b), the entire surface of the base material 42 composed of the non-platable material portion 31 is formed into a film forming the middle of the plateable material portion 32 by, for example, the CVD method or the PVD method. Layer 43. Regardless of the material of the intermediate layer 43, for example, SiN used as a material of a general hard mask can be mentioned.

Next, as shown in FIG. 7 (c), the entire surface of the intermediate layer 43 is coated with a photosensitive resist layer 33a and dried. Next, as shown in FIG. 7 (d), the photosensitive resist layer 33 a is exposed and developed through a photomask to form a photoresist film 33 having a desired pattern.

Next, as shown in FIG. 7 (e), by performing dry etching on the intermediate layer 43 via the photoresist film 33, the plated material portion 32 can be formed into a desired pattern shape. Thereafter, by removing the photoresist film 33, a substrate W having a base material 42 composed of a non-platable material portion 31 and a core material 41 composed of a plateable material portion 32 can be obtained.

Next, a catalyst is provided to the plateable material portion 32 of the substrate W to selectively provide a catalyst to the plateable material portion 32. Next, as shown in FIG. 7 (f), a hard mask layer 35 is selectively formed on the plateable material portion 32 by applying a plating treatment to the substrate W.

Next, as shown in FIG. 7 (g), the hard mask layer 35 is masked, and the base material 42 composed of the non-platable material portion 31 is dry-etched. Accordingly, the portion of the base material 42 that is not covered by the hard mask layer 35 To form a patterned recess.

Thereafter, as shown in FIG. 7 (h), the hard mask layer 35 is removed by wet cleaning, and at the same time, the plateable material portion 32 is removed by, for example, an acid solvent, thereby obtaining a base material forming a pattern-shaped recess. 42.

Even in this modification, the process of forming a hard mask can be simplified by not requiring a pattern transfer process for the hard mask, and the hard mask can not be made by heat treatment when the pattern is formed in the photoresist layer. The material of the cover may be affected.

Modification of substrate manufacturing method

Next, a modified example of the method for manufacturing a substrate for forming a hard mask layer will be described with reference to Figs. 8 (a) to (h). 8 (a) to (h) are diagrams showing a modified example of the method of manufacturing the substrate W shown in FIG.

First, as shown in FIG. 8 (a), a base material 42 composed of a plateable material portion 32 is prepared. As described above, the base material 42 is composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material containing a Si-based material as a main component, a catalyst metal material, or a material containing a carbon as a main component. Made of materials.

Next, as shown in FIG. 8 (b), the entire surface of the base material 42 composed of the plateable material portion 32 is formed into a sacrificial hard mask by, for example, a CVD method or a PVD method to form a sacrificial hard mask. Cover material layer 46a. The sacrificial hard mask material layer 46a may be made of, for example, carbon as a main component, and more specifically, it may be made of amorphous carbon. Alternatively, the sacrificial hard mask material layer 46a may be composed of titanium nitrite, tungsten, or the like. can. The sacrificial hard mask material layer 46a is not limited to one layer, and may be a multilayer structure. For example, it may include a SiN (silicon nitride) layer on the base material 42 and an amorphous carbon layer on the SiN layer.

Next, as shown in FIG. 8 (c), a photoresist film 33 having a desired pattern is formed on the sacrificial hard mask material layer 46a.

Thereafter, as shown in FIG. 8 (d), the photoresist film 33 is masked, and the sacrificial hard mask material layer 46 a is dry-etched. According to this, a sacrificial hard mask layer 46 that is patterned into a shape that is slightly the same as the pattern shape of the photoresist film 33 can be obtained. Thereafter, as shown in FIG. 8 (e), the photoresist film 33 is removed.

Next, as shown in FIG. 8 (f), a film is formed to form the non-platable material portion 31 so as to cover the sacrificial hard mask layer 46 and the base material 42 exposed from the opening portion of the sacrificial hard mask layer 46. Material 31a. The material 31a is formed over the entire surface of the sacrificial hard mask layer 46 and the base material 42 by, for example, a CVD method or a PVD method. As described above, the material 31a is made of a material containing SiO ₂ as a main component.

Next, as shown in FIG. 8 (g), the material 31a is removed in the thickness direction until the surface of the sacrificial hard mask layer 46 is exposed. Accordingly, a core material 41 composed of a non-platable material portion 31 having a desired thickness is formed on a base material 42 composed of a plateable material portion 32. The pattern of the core material 41 is formed into a shape which is slightly the same as the shape of the opening portion of the photoresist film 33.

Thereafter, as shown in FIG. 8 (h), the sacrificial hard mask layer 46 is completely removed by using, for example, a plasma etching method. As shown in FIG. 3, the non-platable material portion 31 and the plateable material can be obtained on the surface. Part 32 substrate W.

In the present modification, the pattern of the core material 41 composed of the non-platable material portion 31 is formed by using the sacrificial hard mask layer 46 having high etching resistance, so that the pattern of the core material 41 can be made finer.

Other Modifications of Manufacturing Method of Substrate

Next, with reference to Figs. 9 (a) to (h), another modification of the method for manufacturing a substrate for forming a hard mask layer will be described. 9 (a) to 9 (h) are diagrams showing other modified examples of the method of manufacturing the substrate W on which the non-platable material portion 31 and the plateable material portion 32 are formed on the surface.

First, as shown in FIG. 9 (a), a substrate body 47 is prepared. The material of the substrate body 47 is not particularly limited, and it may be a material containing SiO ₂ as a main component even if it is the same as the non-platable material portion 31, for example. Alternatively, even if the substrate body 47 is, for example, the same as the plateable material portion 32, the substrate body 47 is made of a material containing at least one of an OCH _x group and an NH _x group, a metal material mainly composed of a Si-based material, a catalyst metal material, or A carbon-based material may be used as the main component.

Next, as shown in FIG. 9 (b), a sacrificial hard mask material layer 46a is formed on the entire surface of the substrate body 47 by, for example, a CVD method or a PVD method to form a sacrificial hard mask. The sacrificial hard mask material layer 46 a is composed of a plateable material portion 32. In this case, the sacrificial hard mask material layer 46a composed of the plateable material portion 32 may be composed of a material containing, for example, carbon as its main component, such as amorphous carbon. In addition, the sacrificial hard mask material layer 46a is not limited to one layer, and may be a multilayer structure. can. For example, it may include a SiN (silicon nitride) layer on the base material 42 and an amorphous carbon layer on the SiN layer.

Next, as shown in FIG. 9 (c), a photoresist film 33 having a desired pattern is formed on the sacrificial hard mask material layer 46 a composed of the plateable material portion 32.

Next, as shown in FIG. 9 (d), the photoresist film 33 is masked, and the sacrificial hard mask material layer 46a is dry-etched. According to this, a sacrificial hard mask layer 46 that is patterned into a shape that is slightly the same as the pattern shape of the photoresist film 33 can be obtained. Thereafter, as shown in FIG. 9 (e), the photoresist film 33 is removed.

Next, as shown in FIG. 9 (f), a film is formed so as to cover the sacrificial hard mask layer 46 and the base material 42 exposed from the opening portion of the sacrificial hard mask layer 46. Material 31a. The material 31a is formed over the entire surface of the sacrificial hard mask layer 46 and the base material 42 by, for example, a CVD method or a PVD method. As described above, the material 31a is made of a material containing SiO ₂ as a main component.

Next, as shown in FIG. 9 (g), the material 31a is removed in the thickness direction until the surface of the sacrificial hard mask layer 46 is exposed. As a result, a core material 41 composed of a non-platable material portion 31 having a desired thickness is formed on the substrate body 47. The pattern of the core material 41 is formed into a shape which is slightly the same as the shape of the opening portion of the photoresist film 33.

Thereafter, as shown in FIG. 9 (h), only a part of the sacrificial hard mask layer 46 is removed in the thickness direction by, for example, plasma etching. At this time, a part of the substrate body 47 is constituted by the plateable material portion 32 成 之 Saree hard mask layer 46. As a result, a substrate W having the non-platable material portion 31 and the plateable material portion 32 formed on the surface of the substrate body 47 can be obtained.

According to this modification, the pattern of the core material 41 can be made finer by using the sacrificial hard mask layer 46 made of the high-resistance plating material portion 32.

In addition, the present invention is not limited to the implementation of the above-mentioned embodiments. In the implementation stage, the constituent elements can be modified and embodied without departing from the scope of the gist. Furthermore, various inventions can be formed by combining appropriate combinations of the plural constituent elements disclosed in the above-mentioned embodiments. It is also possible to delete several constituent elements from all the constituent elements shown in the implementation form. Furthermore, it is also possible to appropriately combine constituent elements covering different implementation types.

Claims (8)

A method for forming a hard mask, which includes the following steps: preparing a substrate on which a non-platable material portion and a plateable material portion are formed on the surface; and performing a catalyst-imparting treatment on the substrate to selectively select the plateable material portion A process of imparting a catalyst to the ground; and a process of selectively forming a hard mask layer on the above-mentioned plateable material portion by applying a plating treatment to the substrate, and the above-mentioned non-plateable material portion is mainly composed of SiO ₂ The above-mentioned plateable material part is a material containing at least one of an OCH _x group and an NH _x group, a metal material containing Si as a main component, a catalyst metal material or carbon containing a main component, and the substrate has A base material composed of a plating material portion and a core material composed of the above-mentioned non-platable material portion are prominently provided on the base material as a main component. The method for forming a hard mask according to claim 1, wherein the above-mentioned plateable material part is mainly composed of a material containing a Si-OCH _x group or a Si-NH _x group. The method for forming a hard mask according to claim 1 or 2, wherein the hard mask layer is made of Co, Co alloy, or Ni-based material containing B or P as a main component. The method for forming a hard mask according to claim 1 or 2, wherein the catalyst contains an iron group element, a platinum group metal element, Cu, Ag, or Au. A method for forming a hard mask, which includes the following steps: preparing a substrate on which a non-platable material portion and a plateable material portion are formed on the surface; and performing a catalyst-imparting treatment on the substrate to selectively select the plateable material portion A process of imparting a catalyst to the ground; and a process of selectively forming a hard mask layer on the above-mentioned plateable material portion by applying a plating treatment to the substrate, and the above-mentioned non-plateable material portion is mainly composed of SiO ₂ The above-mentioned plateable material is mainly composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material containing Si as a main component, a catalyst metal material, or a material containing carbon as a main component. The substrate has a base material composed of the non-platable material portion, and a core material protrudingly provided on the base material and composed of the plateable material portion. An apparatus for forming a hard mask, comprising: a substrate holding portion that holds a substrate on a surface of which a non-platable material portion and a plateable material portion are formed; and a catalyst imparting portion that imparts a catalyst to the substrate. Processing to selectively impart a catalyst to the plateable material portion; and a plating solution supply unit for selectively forming a hard mask layer with respect to the plateable material portion by supplying a plating liquid to the substrate. The above-mentioned non-platable material portion is mainly composed of SiO ₂ , and the above-mentioned non-platable material portion is composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material mainly composed of Si, and a catalyst metal. Material or a material containing carbon as a main component, the substrate has a base material composed of the above-mentioned plateable material portion, and a core protrudingly provided on the base material and composed of the above-mentioned non-platable material portion material. An apparatus for forming a hard mask, comprising: a substrate holding portion that holds a substrate on a surface of which a non-platable material portion and a plateable material portion are formed; and a catalyst imparting portion that imparts a catalyst to the substrate. Processing to selectively impart a catalyst to the plateable material portion; and a plating solution supply unit for selectively forming a hard mask layer with respect to the plateable material portion by supplying a plating liquid to the substrate. The above-mentioned non-platable material portion is mainly composed of SiO ₂ , and the above-mentioned non-platable material portion is composed of a material containing at least one of an OCH _x group and an NH _x group, a metal material mainly composed of Si, and a catalyst metal. Material or a material containing carbon as a main component, the substrate has a base material composed of the non-platable material portion, and a core protrudingly provided on the base material and composed of the plateable material portion material. A memory medium having recorded thereon a program that is executed by a computer that controls the operation of the forming device of the hard mask when the computer controls the forming device of the hard mask to perform the items 1 to 5 The method of forming the hard mask described in any one of the items.