TWI676342B - Half-bridge circuit assembly and switch mode power supply - Google Patents

Abstract

A half-bridge circuit assembly includes a main circuit board having a first transistor setting area and a second transistor setting area, a first transistor provided in the first transistor setting area, and a second transistor. The crystal setting area is electrically connected in series with the second transistor of the first transistor and a bridge circuit board. There is a node forming a signal interference region between the first transistor and the second transistor. The bridge circuit board is bridged from the first transistor setting area to the second transistor setting area across the signal interference area. A control terminal of the first transistor receives a first driving signal. A control terminal of the second transistor receives a second driving signal opposite to the first driving signal through the bridge circuit board, so as to prevent the second driving signal from being interfered by the signal interference area.

Description

Half-bridge circuit component and switching power supply

The invention relates to a circuit component, in particular to a half-bridge circuit component using a bridge circuit board.

With the advancement of technology, electronic devices are becoming more and more popular, such as televisions, computer hosts, computer screens, refrigerators, stereos, etc. Because most of the internal electronic components of most electronic devices use DC power, a device is required to convert AC power with fixed voltage into various DC voltages of different sizes and supply them to various internal electronic components to make their operations perform their functions. . The device that converts AC power to DC power is a power supply.

Generally speaking, power supplies can be divided into Linear Power Supply and Switch Mode Power Supply (SMPS) according to their circuits. The advantages of linear power supply are simple circuit, durable, high stability and fast transient response. However, linear power supplies have the disadvantages of large size, heavy weight, low efficiency, narrow input voltage range, short holding time, etc., which has made linear power supplies gradually used by switching power supplies in recent years. To replace.

In order to respond to various output powers, the switching power supply has developed the following common circuit topologies, including Flyback, Forward, and Full Bridge. , Half Bridge and Push-Pull.

Please refer to the first diagram and the second diagram. The first diagram is a schematic circuit diagram of the switching power supply of the prior art; and the second diagram is a three-dimensional diagram illustrating the switching power supply of the prior art. As shown in the figure, a switching power supply PA100 includes at least one circuit board, a first transistor PA12, a second transistor PA13, a driving signal source PA14, an inductor PA15, a capacitor PA16, and an input voltage. Source PA17. In this embodiment, the switching power supply PA100 includes two circuit boards PA11 and PA11a.

The first transistor PA12, the second transistor PA13, and the driving signal source PA14 are disposed on the circuit board PA11, and the inductor PA15 and the capacitor PA16 are disposed on the circuit board PA11a. However, it is not limited to this. In the prior art, the above-mentioned components may all be provided on the same circuit board. The input voltage source PA17 is electrically connected to the first transistor PA12 and the second transistor PA13 through the voltage connection terminals PAH2 and PAH3.

The first transistor PA12 and the second transistor PA13 will be described using a metal-oxide semiconductor field effect transistor (MOSFET), but not limited thereto. The first transistor PA12 has a gate PAG12, a drain PAD12, and a The source PAS12, and the second transistor PA13 has a gate PAG13, a drain PAD13, and a source PAS13. The first transistor PA12 and the second transistor PA13 are electrically connected to form a half-bridge circuit. More specifically, the source PAS12 of the first transistor PA12 is electrically connected to the drain PAD13 of the second transistor PA13.

The gate PAG12 of the first transistor PA12 receives a first driving signal PAS1 from the driving signal source PA14, and the gate PAG13 of the second transistor PA13 receives a second driving signal PAS2 from the driving signal source PA14. A driving signal PAS1 and a second driving signal PAS2 are mutually opposite signals. In other words, in the half-bridge circuit, when the first transistor PA12 is turned on, the second transistor PA13 is turned off; when the second transistor PA13 is turned on, the first transistor PA12 is turned off to avoid the first transistor The crystal PA12 and the second transistor PA13 are turned on at the same time, which causes a short circuit, and even the first transistor PA12 and the second transistor PA13 are burned.

However, the source PAS12 and the drain PAD13 are electrically connected through a wiring PAL3, and a node PAN is provided on the wiring PAL3. The node PAN is electrically connected to the inductor PA15 through a wiring PAL1 and an inductance connection terminal PAH1. The capacitor PA16 is electrically connected to the inductor PA15 and is electrically connected to the voltage connection terminal PAH3 by a wiring PAL2. Among them, the wiring PAL1, the wiring PAL2, and the wiring PAL3 can be wires or traces on a printed circuit board. . Due to the constantly switching relationship between the first transistor PA12 and the second transistor PA13, the node PAN and the wiring PAL1 and PAL3 passing through the node PAN will form a signal interference source, and expand outward based on the node PAN and the wiring PAL1 and PAL3. Form a signal stem Disturb zone PAIR. It should be noted here that the signal interference area is not only a two-dimensional plane, but may also be a three-dimensional space. The diagram plots the part where the signal interference area is formed on the circuit board PA11 and is labeled as the signal interference area PAIR. In addition, as long as there is a place where current flows, interference will occur more or less, because it is not the main cause of the signal interference area PAIR, so I will not go into details.

Here, the driving signal source PA14 is adjacent to the first transistor PA12, so the first driving signal PAS1 transmitted will not pass through the signal interference area PAIR. However, when the driving signal source PA14 transmits the second driving signal PAS2 to the second transistor PA13, it will pass through the signal interference area PAIR, thereby causing the second driving signal PAS2 to be disturbed. It is even possible that the second transistor PA13, which should be turned off, is turned on, so that the first transistor PA12 and the second transistor PA13 are turned on at the same time, which causes a short circuit and burns the circuit. If the driving signal source PA14 is adjacent to the second transistor PA13, it is possible that the first driving signal PAS1 transmitted to the first transistor PA12 far away from the driving signal source PA14 may be interfered through the signal interference area PAIR.

The solution in the prior art is to try to route the wiring (wires or traces on the printed circuit board) away from the signal interference area PAIR, as shown in the second figure. However, this will reduce the use density on the circuit board PA11 or increase the area and volume of the circuit board PA11, thereby increasing the space occupancy, which does not meet the needs of today's society to pursue lightweighting or minimizing the volume. Moreover, if there are multiple sets of the first transistor PA12 and the second transistor PA13 on the circuit board PA11, the signal interference area PAIR will also increase accordingly, so the coverage will be larger. If the wiring is to completely bypass the signal interference area, the problems of reducing the use density and increasing the space occupancy mentioned above will be caused. more obvious. In addition, as mentioned above, as long as there is wiring, there will be more or less interference. Therefore, bypassing the wiring around the signal interference area PAIR may still be interfered by other wiring on the circuit board PA11.

Whereas in the prior art, the node formed by the first transistor and the second transistor, and the signal interference area formed by expanding the node based on the node and the wiring passing through the node, will cause the first driving signal and the One of the two driving signals passing through the signal interference area is interfered by the signal interference area, which may cause the first transistor and the second transistor to be turned on at the same time, resulting in a short circuit, and even the problem of burning the first transistor and the second transistor. Bypassing the wiring away from the signal interference zone, it will cause the use density of the circuit board to decrease, or increase the space occupation rate of the circuit board, which runs counter to the current demand for lightweight and miniaturization. One of the main objects of the present invention is to provide a half-bridge circuit component and a switching power supply, so that neither the first driving signal nor the second driving signal passes through the signal interference area.

In order to solve the problems of the prior art, the present invention adopts a necessary technical means to provide a half-bridge circuit assembly for receiving a first driving signal and a second driving signal opposite to the first driving signal, and including a main A circuit board, a first transistor, a second transistor and a bridge circuit board.

The main circuit board has a first transistor setting area and a second transistor setting area. The first transistor is disposed in the first transistor installation area. The second transistor is disposed in the second transistor installation area. The first transistor is electrically connected in series, and there is a node between the first transistor and the second transistor, and a signal interference area is defined by expanding outward based on the wiring of the node and at least one connecting node.

The bridge circuit board is bridged from the first transistor setting area to the second transistor setting area, wherein a control terminal of the first transistor receives the first driving signal and a control terminal of the second transistor The second driving signal is received through the bridge circuit board, so as to avoid the second driving signal from being interfered by the signal interference area.

Based on the above-mentioned necessary technical means, one of the subsidiary technical means derived from the present invention is to make the first transistor in the half-bridge circuit component, a source (source) and a drain (a drain) of a second transistor. ) Are electrically connected and form the aforementioned nodes.

Based on the above-mentioned necessary technical means, one subsidiary technical means derived from the present invention is that the half-bridge circuit component further includes a connector, and the connector is electrically connected to the main circuit board and the bridge circuit board.

Based on the above-mentioned necessary technical means, one of the subsidiary technical means derived from the present invention is that the half-bridge circuit component further includes a third transistor, and the third transistor system is disposed in the first transistor installation area and is The first transistor is connected in series, and a control terminal of the third transistor receives the first driving signal.

Based on the above-mentioned necessary technical means, one of the subsidiary technical means derived from the present invention is that the half-bridge circuit component further includes a fourth transistor, and the fourth transistor system is disposed in the second transistor installation area and is electrically The second transistor is connected in series, and a control terminal of the fourth transistor receives the second driving signal through the bridge circuit board.

Based on the above-mentioned necessary technical means, one of the subsidiary technical means derived from the present invention is that the half-bridge circuit component further includes a plurality of third transistors electrically connected in series with each other. In the crystal setting area, a source of one of the third transistors closest to the first transistor is electrically connected to a drain of the first transistor, and a plurality of control terminals of the third transistor receive the first Drive signal.

Based on the above-mentioned necessary technical means, one of the subsidiary technical means derived from the present invention is to make the half-bridge circuit component further include a plurality of fourth transistors, and the fourth transistor system is arranged in the second transistor installation area. One of the transistors closest to the second transistor has a drain connected electrically to a source of the second transistor, and a plurality of control terminals of the fourth transistor receive the second driving signal through the bridge circuit board. .

In order to solve the problems of the prior art, the present invention adopts a necessary technical means to additionally provide a switching power supply, which includes at least half of a bridge circuit component and a driving signal source. Each half-bridge circuit assembly includes a main circuit board, a first transistor, a second transistor, and a bridge circuit board.

The main circuit board has a first transistor setting area and a second transistor setting area. The first transistor is disposed in the first transistor installation area. The second transistor is disposed in the second transistor setting area and is electrically connected in series with the first transistor. There is a node between the first transistor and the second transistor, and the node and at least one passing node Based on the wiring, it expands outward to define a signal interference area. The bridge circuit board is bridged from the first transistor setting area to the second transistor setting area across the signal interference area.

The driving signal source is adjacent to the half-bridge circuit component. A control terminal of the first transistor receives a first driving signal from the driving signal source, and a control terminal of the second transistor receives from the driving signal source through the bridge circuit board. A second driving signal opposite to the first driving signal.

Based on the above-mentioned necessary technical means, a subsidiary technical means derived from the present invention is to make a first transistor in a switching power supply, a source of which is electrically connected to a drain of a second transistor, and The above nodes are formed.

Based on the above-mentioned necessary technical means, one subsidiary technical means derived from the present invention is that the switching power supply further includes a connector, and the connector is electrically connected to the main circuit board and the bridge circuit board.

As mentioned above, the half-bridge circuit assembly provided by the present invention uses a bridge circuit board to bridge the signal interference area from the first transistor setting area to the second transistor setting area, so that the control terminal of the second transistor is connected through the bridge. The circuit board receives the second driving signal to prevent the second driving signal from being interfered by passing through the signal interference area.

PA100‧‧‧Switching Power Supply

PA11, PA11a‧‧‧Circuit Board

PA12‧‧‧The first transistor

PA13‧‧‧Second transistor

PA14‧‧‧Drive signal source

PA15‧‧‧Inductance

PA16‧‧‧Capacitor

PA17‧‧‧Input voltage source

PAD12, PAD13 ‧‧‧ Drain

PAG12, PAG13‧‧‧Gate

PAS12, PAS13‧‧‧Source

PAH1‧‧‧Inductive connection terminal

PAH2, PAH3‧‧‧ voltage connection terminal

PAIR‧‧‧Signal interference zone

PAL1, PAL2, PAL3‧‧‧wiring

PAN‧‧‧node

PAS1‧‧‧First drive signal

PAS2‧‧‧Second driving signal

100, 100a, 100b ‧‧‧ Switching Power Supply

1, 1a, 1b, 1c, 1d, 1e, 1f ‧‧‧ half-bridge circuit components

11‧‧‧Main circuit board

12, 12b, 12c, 12d, 12e, 12f‧‧‧The first transistor

13, 13b, 13c, 13d, 13e, 13f‧‧‧Second transistor

14, 14b, 14c, 14d, 14e, 14f‧‧‧bridge circuit boards

15‧‧‧ connector

16‧‧‧Third transistor

17‧‧‧Fourth transistor

2‧‧‧Drive signal source

3‧‧‧Inductance

4‧‧‧ capacitor

5‧‧‧ input voltage source

6‧‧‧Circuit Board

7‧‧‧Drive signal connector

D12, D13, D16, D17‧‧‧ Drain

G12, G13, G16, G17‧‧‧Gate

S12, S13, S16, S17‧‧‧Source

H1, H1b‧‧‧Inductive connection terminal

H2, H3, H2b, H3b‧‧‧ voltage connection terminals

L1, L2, L3, L1a‧‧‧Wiring

N‧‧‧node

R1‧‧‧The first transistor setting area

R2‧‧‧Second transistor setting area

RI, RIa‧‧‧Signal interference zone

S1‧‧‧First drive signal

S2‧‧‧Second driving signal

The first diagram is a circuit diagram of a switching power supply of the prior art; the second diagram is a perspective diagram of a switching power supply of the prior art; and the third diagram is a diagram of the first preferred embodiment of the present invention. Circuit diagram of switching power supply; The fourth diagram is a three-dimensional schematic diagram of the switching power supply provided by the first preferred embodiment of the present invention; the fifth diagram is a schematic circuit diagram of the switching power supply provided by the second embodiment of the present invention; The figure is a perspective view showing a switching power supply provided by the second embodiment of the present invention; the seventh figure is a perspective view showing a switching power supply provided by the third embodiment of the present invention; and the eighth view is a view showing Another perspective view of the switchable power supply provided by the third embodiment of the present invention.

Please refer to the third diagram and the fourth diagram, wherein the third diagram is a schematic circuit diagram of the switching power supply provided by the first preferred embodiment of the present invention; and the fourth diagram is the first preferred embodiment of the present invention. The three-dimensional schematic diagram of the switching power supply provided in the embodiment. As shown in the figure, a switching power supply 100 includes a half bridge circuit component 1, a driving signal source 2, an inductor 3, a capacitor 4, an input voltage source 5 and a circuit board 6. The half-bridge circuit assembly 1 includes a main circuit board 11, a first transistor 12, a second transistor 13, and a bridge circuit board 14. In order to avoid that the embodiments of the present invention are unclear due to too many lines in the diagram, the wirings (traces or wires of the printed circuit) in the diagram are only illustrated by lines to express the electrical connection relationship between the two ends of the lines.

The main circuit board 11 has a first transistor setting region R1 and a second transistor setting region R2. The first transistor 12 is connected In the first transistor setting region R1, the second transistor 13 is connected to the second transistor setting region R2 and is electrically connected to the first transistor 12 in series. In order to avoid the lines in the figure being too messy, the first transistor setting area R1 and the second transistor setting area R2 are only indicated by arrows here, which are the areas for the first transistor 12 and the second transistor 13 to be arranged. In this embodiment, the first transistor 12 and the second transistor 13 are Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), but not limited thereto. The first transistor 12 and the second transistor 13 may also be power transistors such as a bipolar junction transistor (BJT) and an insulated gate bipolar transistor (IGBT).

The first transistor 12 has a drain D12, a gate G12, and a source S12, and the second transistor 13 has a drain D13 and a gate G13 and a source S13. The input voltage source 5 is electrically connected to the drain D12 of the first transistor 12 and the source S13 of the second transistor 13 via the voltage connection terminals H2 and H3. The source S12 of the first transistor 12 and the drain D13 of the second transistor 13 are electrically connected in series to form a half bridge circuit. The source S12 of the first transistor 12 and the drain of the second transistor 13 are connected in series. D13 will have a node N.

The driving signal source 2 is connected to the main circuit board 11 and transmits a first driving signal S1 and a second driving signal S2 through a driving integrated circuit (IC) (not shown). Among them, the first The driving signal S1 and the second driving signal S2 are mutually inverted signals. A control terminal of the first transistor 12 can be regarded as the gate G12, and receives the first driving The signal S1, and a control terminal of the second transistor 13, can be regarded as the gate G13, which receives the second driving signal S2. Because the first driving signal S1 and the second driving signal S2 are anti-phase signals to each other, only one of the first transistor 12 and the second transistor 13 is turned on, and the other is turned off to avoid the first transistor 12 Simultaneously conducting with the second transistor 13 causes a short circuit. Because the resistance of each of the first transistor 12 and the second transistor 13 is very small, the simultaneous conduction will cause excessive current, and even burn the first transistor 12, the second transistor 13, or the main circuit board 11.

The node N is located on a wiring L3 that is electrically connected to the source S12 and the drain D13, and is electrically connected to the inductor 3 through an inductance connection terminal H1 through a wiring L1. Because the on-off switching relationship between the first transistor 12 and the second transistor 13, the node N and the wiring L1, L3 passing through the node N will form a signal interference source, and will be based on the node N and the wiring L1, L3. The external expansion forms a signal interference area RI. In more detail, the signal interference area is not only a two-dimensional plane, but may also be a three-dimensional space. The drawing only draws the portion where the signal interference area is formed on the main circuit board 11 and marks it as the signal interference area RI. In addition, the shape range of the signal interference region RI is only for illustration, and will increase or decrease according to the actual circuit specifications, but both will expand outward based on the node N and the wiring passing through the node N. The capacitor 4 is electrically connected to the input voltage source 5 through a voltage connection terminal H3 through a wiring L2. The wirings L1, L2, and L3 can be wires or traces on a printed circuit board. In this embodiment, the inductor 3 and the capacitor 4 are disposed on the circuit board 6, but not limited thereto, the inductor 3 and the capacitor 4 may also be disposed on the main circuit board 11.

Bridge circuit board 14 from the first transistor setting area R1 The signal interference region RI is bridged to the second transistor setting region R2. In this embodiment, the bridge circuit board 14 is electrically connected and connected to the main circuit board 11 by using a plurality of connectors 15 (only one of which is indicated here).

In this embodiment, the driving signal source 2 is adjacent to the first transistor 12. Therefore, the driving signal source 2 transmits the first driving signal S1 to the first transistor 12 without passing through the signal interference region RI. When the driving signal source 2 transmits the second driving signal S2 to the second transistor 13, it will pass through the signal interference region RI. Therefore, the driving signal source 2 transmits the second driving signal S2 to the second transistor 13 through the bridge circuit board 14, thereby crossing the signal interference region RI to prevent the second driving signal S2 from being interfered by the signal interference region RI. In addition, the bridge circuit board 14 and the signal interference region RI located on the main circuit board 11 have air as a barrier layer, which is more effective than the previous method of bypassing the signal interference region PAIR on the circuit board. Avoid the second drive signal S2 from being interfered by the signal interference area RI.

The circuit transmitting the second driving signal S2 is set on the bridge circuit board 14 instead. The space on the main circuit board 11 can be cleared and other circuits can be reconfigured to increase the space utilization rate on the main circuit board 11 without increasing the main circuit. The area volume of the plate 11 further improves the space occupation rate.

Next, please refer to FIGS. 4 to 6 together, where the fifth diagram is a schematic circuit diagram of the switching power supply provided by the second embodiment of the present invention; and the sixth diagram is the second diagram of the present invention. The three-dimensional schematic diagram of the switching power supply provided in the embodiment. As shown in the figure, a switching power supply 100a is mostly the same as the switching power supply 100, with the difference only in the half-bridge circuit component 1a. In addition, the same parts of the inductor 3, the capacitor 4, and the circuit board 6 are omitted in this embodiment. See the fourth figure.

The half-bridge circuit assembly 1 a includes a main circuit board 11, a first transistor 12, a second transistor 13, a bridge circuit board 14, and a third transistor 16 and a fourth transistor 17 which are the same as those in the first embodiment. The third transistor 16 and the fourth transistor 17 are also MOSFETs, and therefore each has a source (S16, S17), a drain (D16, D17), and a gate (G16, G17). The third transistor 16 and the fourth transistor 17 may be transistors such as BJT and IGBT.

The source S16 of the third transistor 16 is electrically connected in series with the drain D12 of the first transistor 12, and the drain D17 of the fourth transistor 17 is electrically connected in series with the source S13 of the second transistor 13. The gate G16 of the third transistor 16 receives the first driving signal S1 together with the first transistor 12, and the gate G17 of the fourth transistor 17 receives the second driving signal S2 together with the second transistor 13. Therefore, the third transistor 16 and the first transistor 12 are turned on or disconnected together, and there is no switching relationship between the first transistor 12 and the second transistor 13 on and off, so the third transistor 16 There will be no signal interference area with the first transistor 12. Similarly, the relationship between the fourth transistor 17 and the second transistor 13 is the same.

The first transistor 12 and the second transistor 13 are electrically connected to form a node N. The node N and the wiring passing through the node N are shown here. Only the wiring L1a is shown, and a signal interference source will still be formed. Since the interference region RIa is the same as the first embodiment, it will not be described in detail. The bridge circuit board 14 still crosses the signal interference area RRa.

In this embodiment, because the number of transistors is increased compared to the first embodiment, the individual withstand voltage requirements of the transistors can be reduced. For example, the input voltage source 5 is 1000V. In the first embodiment, when the first transistor 12 is on and the second transistor 13 is off, the voltage across the first transistor 12 is 1000V; When one transistor 12 is turned off and the second transistor 13 is turned on, the voltage across the second transistor 13 is 1000V.

In this embodiment, when the first transistor 12 and the third transistor 16 are turned on and the second transistor 13 and the fourth transistor 17 are turned off, each of the first transistor 12 and the third transistor 16 is The voltage drop across is 500V; when the first transistor 12 and the third transistor 16 are disconnected and the second transistor 13 and the fourth transistor 17 are on, the respective voltages of the second transistor 13 and the fourth transistor 17 are different. The voltage drop is 500V. The greater the number of the third transistor 16 and the fourth transistor 17, the more the respective trans-voltage will decrease, and the individual withstand voltage requirements of the transistor will be reduced accordingly.

In other embodiments of the present invention, the number of the third transistor and the fourth transistor may be plural, and the electrical series connection method is: a third transistor closest to the first transistor (second transistor) (Fourth transistor): The source of the third transistor (fourth transistor) is electrically connected in series with the drain of the first transistor (second transistor), and the rest of the third transistors adjacent to each other ( The fourth transistor) is a drain electrode that is electrically connected in series with a neighboring electrode. The input voltage source is electrically connected to the drain of the third transistor closest to the source of the fourth transistor. All third transistors (fourth transistors) receive the same first driving signal (second driving signal) as the first transistor (second transistor).

Finally, please refer to the third, fourth, seventh, and eighth drawings together, where the seventh drawing is a three-dimensional schematic diagram of the switching power supply provided by the third embodiment of the present invention; and, Eight Figures It is a schematic perspective view showing another perspective of the switching power supply provided by the third embodiment of the present invention. As shown in the figure, a switching power supply 100b includes a plurality of half-bridge circuit components 1, 1b, 1c, 1d, 1e, and 1f, voltage connection terminals H2b, H3b, inductance connection terminals H1b, and a drive signal connector 7.

The half-bridge circuit assembly 1 is the same as the first embodiment, and includes a main circuit board 11, a first transistor 12, a second transistor 13, and a bridge circuit board 14 (all labeled in the third figure). The half-bridge circuit components 1b, 1c, 1d, 1e, and 1f are substantially the same as the half-bridge circuit component 1 and include a first transistor 12b, 12c, 12d, 12e, 12f, and a second transistor 13b, 13c, 13d, 13e, 13f. The main circuit board 11 is shared with the half-bridge circuit assembly 1 with the bridge circuit boards 14 b, 14 c, 14 d, 14 e, and 14 f.

The voltage connection terminals H2b and H3b and the inductance connection terminal H1b are the same as the voltage connection terminals H2 and H3 and the inductance connection terminal H1 in the first embodiment, and they will still be electrically connected to the input voltage source, capacitance and inductance, so I will not go into details. However, the figure does not show the input voltage source, capacitor, and inductor. The driving signal connector 7 is electrically connected to the driving signal device (such as the driving signal source 2) for receiving and transmitting the first driving signal S1 and the second driving signal S2.

Most of the switching power supplies include a first transistor and a second transistor which are electrically connected in series to each other in a complex array, and a group of the first transistor and the second transistor which are electrically connected in series to each other will form one The node and a signal interference area, wherein the signal interference area is defined based on the node and the wiring passing through the node and is expanded outward. The complex array will form a plurality of nodes and a plurality of signal interference areas.

As shown in the seventh and eighth figures, the half-bridge circuit components 1, 1b, 1c, 1d, 1e, and 1f will have six sets of the first transistor and the second transistor connected, and six nodes will be formed ( As shown in the third and fourth nodes (N), six signal interference regions (such as the signal interference region RI in the fourth graph) are formed. If the solution according to the prior art is adopted, when the signal interference area is more, the wiring will be routed further, the utilization rate of the circuit board will be lower, or the area and volume of the circuit board will increase more.

In this embodiment, each group of half-bridge circuit components respectively uses their bridge circuit boards 14b, 14c, 14d, 14e, 14f to cross the signal interference area (such as the signal interference area RI in the fourth figure), which can not only increase the main The use density of the circuit board 11 can also use the air between the bridge circuit board and the main circuit board 11 as a barrier layer to prevent the second driving signal from being interfered by the signal interference area, so as to solve the problem caused by the formation of the signal interference area in the prior art. Problems.

In this embodiment, the first transistors 12, 12b, 12c, 12d, 12e, and 12f are disposed on the same side adjacent to the driving signal connector 7, and the second transistors 13, 13b, 13c, 13d, 13e, and 13f are Relative to the first transistors 12, 12b, 12c, 12d, 12e, and 12f, it is disposed on the other side far from the driving signal connector 7, but it is not limited thereto.

The first transistor and the second transistor may be arranged alternately. Taking the component symbols in this embodiment as an example, the first transistors 12, 12c, 12e and the second transistors 13b, 13d, 13f are disposed on the same side adjacent to the driving signal connector 7, and are sequentially arranged as the first Transistor 12, second transistor 13b, first transistor 12c, second transistor 13d, first transistor 12e and second transistor 13f; similarly, stay away from the drive signal connector 7 The other side is sequentially arranged as the second transistor 13, the first transistor 12b, the second transistor 13c, the first transistor 12d, the second transistor 13e, and the first transistor 12f.

Generally speaking, transistors in a half-bridge circuit can be divided into high-side transistors and low-side transistors. In this embodiment, the first transistors 12, 12b, 12c, 12d, 12e, and 12f are high-side transistors, and the second transistors 13, 13b, 13c, 13d, 13e, and 13f are low-side transistors. Because the power losses of the high-side transistor and the low-side transistor are different, the thermal energy generated by the high-side transistor and the low-side transistor are also different. The high-side transistors and the low-side transistors in each group of half-bridge circuits are staggered to prevent the high-side transistors in each group of half-bridge circuits from being located on the same side, which can effectively disperse the half-bridge circuits. The thermal energy generated is avoided because the high-side transistors are all on the same side, so that the temperature on this side is much higher than the other side on which the low-side transistors are located.

It should be noted that the arrangement of the above-mentioned first transistors 12, 12b, 12c, 12d, 12e, 12f and the second transistors 13, 13b, 13c, 13d, 13e, 13f is only an example, and the above-mentioned arrangement is not used. Limited.

In summary, the switchable power supply provided by the present invention uses the bridge circuit board in the half-bridge circuit assembly to cross the signal interference area, and uses the air between the bridge circuit board and the main circuit board as a barrier to avoid driving signals. It is interfered by the signal interference area to solve various problems arising from the signal interference area in the prior art. In addition, the half-bridge circuit component of the present invention is not limited to being used in a switching power supply. The half-bridge circuit components all belong to the protection scope of the present invention.

With the above detailed description of the preferred embodiments, it is hoped that the features and spirit of the present invention can be more clearly described, and the scope of the present invention is not limited by the preferred embodiments disclosed above. On the contrary, the intention is to cover various changes and equivalent arrangements within the scope of the patents to be applied for in the present invention.

Claims (10)

A half-bridge circuit component is used for receiving a first driving signal and a second driving signal opposite to the first driving signal. The half-bridge circuit includes a main circuit board and a first transistor setting area. And a second transistor setting area; a first transistor being set in the first transistor setting area; a second transistor being set in the second transistor setting area and electrically connected in series with the first transistor A transistor having a node between the first transistor and the second transistor, and extending outwardly to define a signal interference region based on the node and at least one wiring connecting the node; and a bridge The circuit board is bridged from the first transistor setting area to the second transistor setting area across the signal interference area, wherein a control terminal of the first transistor receives the first driving signal and the second transistor A control terminal receives the second driving signal through the bridge circuit board. The half-bridge circuit component according to item 1 of the scope of the patent application, wherein a source of the first transistor is electrically connected to a drain of the second transistor to form the node. The half-bridge circuit component described in item 1 of the scope of the patent application further includes a connector, and the connector is electrically connected to the main circuit board and the bridge circuit board. The half-bridge circuit component described in item 1 of the scope of patent application, further includes a third transistor, the third transistor system is disposed in the first transistor installation area, and the first transistor is electrically connected in series, A control terminal of the third transistor receives the first driving signal. The half-bridge circuit component described in item 1 of the scope of the patent application further includes a fourth transistor, the fourth transistor system is disposed in the second transistor installation area, and the second transistor is electrically connected in series. A control terminal of the fourth transistor receives the second driving signal through the bridge circuit board. The half-bridge circuit component described in item 1 of the scope of the patent application, further includes a plurality of third transistors electrically connected in series with each other. The third transistor systems are disposed in the first transistor installation area. A source of one of the three transistors closest to the first transistor is electrically connected to a drain of the first transistor, and a plurality of control terminals of the third transistors receive the first driver. Signal. The half-bridge circuit component described in item 1 of the scope of the patent application further includes a plurality of fourth transistors electrically connected in series with each other. The fourth transistor systems are disposed in the second transistor installation area. One of the four transistors closest to the second transistor has a drain connected electrically to a source of the second transistor, and a plurality of control terminals of the fourth transistors pass through the bridge circuit board. Receiving the second driving signal. A switching power supply includes at least half of a bridge circuit component, and each of the at least half of the bridge circuit component includes: a main circuit board having a first transistor setting area and a second transistor setting area; a first A transistor is disposed in the first transistor setting area; a second transistor is disposed in the second transistor setting area, and the first transistor is electrically connected in series, and the first transistor is connected to the first transistor There is a node between the second transistors, and a signal interference area is defined based on the node and at least one wiring connected to the node, and a bridge circuit board is provided from the first transistor. And a driving signal source is adjacent to the at least half of the bridge circuit component, and a control terminal of the first transistor receives a signal from the driving signal source. A first driving signal, and a control terminal of the second transistor receives a second driving signal from the driving signal source which is opposite to the first driving signal through the bridge circuit board. The switching power supply according to item 8 of the scope of patent application, wherein a source of the first transistor is electrically connected to a drain of the second transistor and forms the node. . The switching power supply as described in item 8 of the scope of patent application, further includes a connector, and the connector is electrically connected to the main circuit board and the bridge circuit board.