TWI673898B - Light extraction substrate for organic light-emitting diode, method of fabricating the same, and organic light-emitting diode device including the same - Google Patents

Light extraction substrate for organic light-emitting diode, method of fabricating the same, and organic light-emitting diode device including the same Download PDF

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TWI673898B
TWI673898B TW106109412A TW106109412A TWI673898B TW I673898 B TWI673898 B TW I673898B TW 106109412 A TW106109412 A TW 106109412A TW 106109412 A TW106109412 A TW 106109412A TW I673898 B TWI673898 B TW I673898B
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light extraction
metal oxide
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TW201801370A (en
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李柱永
尹洪
李銀鎬
崔殷豪
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美商康寧公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/85Arrangements for extracting light from the devices
    • H10K50/854Arrangements for extracting light from the devices comprising scattering means

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Abstract

提供一種用於OLED之光萃取基板、製造其之方法、及包含其之有機發光二極體裝置。光萃取基板包含基底基板及設置於基底基板上的散射層,散射層包含有第一金屬氧化物及第二金屬氧化物的混合物。第二金屬氧化物之比表面積大於第一金屬氧化物之比表面積。光萃取基板使平坦化層的厚度顯著減少,以改善OLED裝置的光萃取效率。Provided are a light extraction substrate for an OLED, a method for manufacturing the same, and an organic light emitting diode device including the same. The light extraction substrate includes a base substrate and a scattering layer disposed on the base substrate. The scattering layer includes a mixture of a first metal oxide and a second metal oxide. The specific surface area of the second metal oxide is larger than that of the first metal oxide. The light extraction substrate significantly reduces the thickness of the planarization layer to improve the light extraction efficiency of the OLED device.

Description

用於有機發光二極體之光萃取基板、製造其之方法、及包含其之有機發光二極體裝置Light extraction substrate for organic light emitting diode, method for manufacturing the same, and organic light emitting diode device including the same

本揭露關於一種用於有機發光二極體(organic light-emitting diode,OLED)之光萃取基板、製造其之方法、及包含其之有機發光二極體裝置。更具體而言,本揭露關於一種用於OLED的光萃取基板、製造其之方法、及包含其之OLED裝置,其中光萃取基板可允許平坦化(planarization)層的厚度顯著降低,繼而增進OLED裝置的光萃取效率(light extraction efficiency)。The present disclosure relates to a light extraction substrate for an organic light-emitting diode (OLED), a method for manufacturing the same, and an organic light-emitting diode device including the same. More specifically, the present disclosure relates to a light extraction substrate for an OLED, a method of manufacturing the same, and an OLED device including the same, wherein the light extraction substrate may allow the thickness of a planarization layer to be significantly reduced, thereby improving the OLED device. Light extraction efficiency.

一般而言,發光二極體裝置一般可以分為由有機物質形成發光層的有機發光二極體裝置以及由無機物形成發光層的無機發光二極體裝置。有機發光二極體裝置中的有機發光二極體(OLED)是使用由從陰極注入的電子和從陽極注入的電洞的再結合所產生的激子發射的能量產生光的自發光元件。此種OLED具有許多優點,例如以低電壓驅動、自發光、廣視角、高解析率、發色自然以及低反應時間。Generally speaking, light emitting diode devices can be generally classified into organic light emitting diode devices in which a light emitting layer is formed of an organic substance and inorganic light emitting diode devices in which a light emitting layer is formed of an inorganic substance. An organic light-emitting diode (OLED) in an organic light-emitting diode device is a self-light-emitting element that generates light using energy emitted by recombination of electrons injected from a cathode and holes injected from an anode. Such OLEDs have many advantages, such as driving with low voltage, self-emission, wide viewing angle, high resolution, natural color development, and low response time.

近來,研究積極地進行將OLED應用於各種裝置,如可攜式資訊裝置、相機、手錶、辦公設備、交通工具的資訊顯示窗口、電視(TV)、顯示裝置、照明裝置等等。Recently, research has been actively applied to the application of OLEDs to various devices such as portable information devices, cameras, watches, office equipment, information display windows for vehicles, televisions (TVs), display devices, lighting devices, and the like.

用於改善OLED裝置的發光效率的方法包含改善構成發光層的材料的發光效率的方法,以及改善萃取由發光層產生的光的效率的方法。A method for improving the light emitting efficiency of an OLED device includes a method of improving the light emitting efficiency of a material constituting the light emitting layer, and a method of improving the efficiency of extracting light generated by the light emitting layer.

在此,光萃取效率受到形成OLED裝置的層的反射率影響。在傳統的OLED中,當發光層所產生的光束是以大於臨界角(critical angle)的角度發射時,光束在可為透明電極層的較高折射率層與可為基板的較低折射率層間的介面處被全反射。此結果降低了光萃取效率,繼而降低OLED的整體發光效率,因而造成問題。Here, the light extraction efficiency is affected by the reflectivity of the layer forming the OLED device. In a conventional OLED, when a light beam generated by a light emitting layer is emitted at an angle greater than a critical angle, the light beam is between a higher refractive index layer that can be a transparent electrode layer and a lower refractive index layer that can be a substrate. The interface is totally reflected. This result reduces the light extraction efficiency, which in turn reduces the overall luminous efficiency of the OLED, thus causing problems.

具體而言,OLED所發出的光僅約20%被射出,80%的光會因為玻璃基板與包含陽極、電洞注入層、電洞傳輸層、發射層、電子傳輸層及電子注入層的OLED間的折射率的差異造成的波導效應(waveguide effect)、以及因玻璃基板與環境大氣之間的折射率差異引發的全反射而散失。此外,內有機發光層的折射率介於1.7至1.8的範圍,而常用於陽極的氧化銦錫(indiumtin oxide,ITO)的反射率約為1.9。由於這兩層具有範圍為200至400nm的非常小的厚度,且用於基板的玻璃的折射率約為1.5,故在OLED裝置內將會誘發平面波導(planar waveguide)。由於上述原因造成內波導模式的光損失比率估計為45%。此外,由於玻璃基板的折射率為1.5,而環境大氣的折射率為1,當光從玻璃基板的內部導向外時,具有入射角大於臨界角的光束將被全反射,並被陷在玻璃基板內部。而被陷住的光的比例約為35%。因此,所產生的光僅約20%射出。Specifically, only about 20% of the light emitted by the OLED is emitted, and 80% of the light is due to the glass substrate and the OLED including the anode, the hole injection layer, the hole transport layer, the emission layer, the electron transport layer, and the electron injection layer. Waveguide effect caused by the difference in refractive index between them, and total reflection caused by the difference in refractive index between the glass substrate and the ambient atmosphere are lost. In addition, the refractive index of the internal organic light-emitting layer is in the range of 1.7 to 1.8, and the reflectance of indium tin oxide (ITO) commonly used in the anode is about 1.9. Since the two layers have a very small thickness ranging from 200 to 400 nm and the refractive index of the glass used for the substrate is about 1.5, a planar waveguide will be induced in the OLED device. The light loss ratio of the inner waveguide mode due to the above reasons is estimated to be 45%. In addition, since the refractive index of the glass substrate is 1.5 and the refractive index of the ambient atmosphere is 1, when light is directed outward from the inside of the glass substrate, a light beam having an incident angle greater than a critical angle will be totally reflected and trapped on the glass substrate internal. The proportion of trapped light is about 35%. Therefore, only about 20% of the generated light is emitted.

為解決上述問題,研究正在積極地進行可萃取80%的光的光萃取層,否則這些光將散失。光萃取層通常分為內光萃取層(internal light extraction layer)及外光萃取層(external light extraction layer)。就外光萃取層而言,可透過在基板的外表面上設置含有微透鏡的薄膜來改善光萃取效率,且微透鏡可具有各種形狀。此外,由於內光萃取層可以直接萃取在光波導模式(light waveguide mode)中散失的光,所以使用內光萃取層改善光萃取效率的可能性大於使用外光萃取層。在這種情況下,可以藉由混合具有不同折射率的材料來最大化內光萃取層的光散射效應,然後使用混合材料形成內光萃取層。然而,因此,散射元素的大小為光學可辨識(optically recognizable),並亦需混合這些材料。此外,為了OLED的壽命,其上設置有透明電極的內光萃取層的表面必須為平坦。具體來說,作為內光萃取層的散射層插入在基板與透明電極中間,而透明電極的可靠度對OLED來說非常重要。透明電極的不均勻性,如不均勻的薄片電阻、厚度不均勻、或是由於內光萃取層的表面粗糙所產生的峰值(peaks)的存在直接地造成OLED壽命的降低。因此,內光萃取層的表面粗糙度是在內光萃取層上形成透明電極之前必須最仔細考量的因素。特別是當OLED應用於照明裝置時,OLED的表面積為重要的因素。當無法確保透明電極具有高度的平坦度時,OLED可能會在短時間內劣化。因此,當使用內光萃取層時,需要在內光萃取層與透明電極間設置平坦化(planarization)層。然而,傳統的平坦化層是由不具有散射功能的材料形成。平坦化層增加了從發光層到內光萃取層的距離。因此,偶極發射以耗損波(evanescent wave)的形式傳播的光將難以到達內光萃取層,繼而降低包含OLED的OLED裝置的光萃取效率。To solve the above problems, research is actively working on a light extraction layer that can extract 80% of the light, otherwise this light will be lost. The light extraction layer is generally divided into an internal light extraction layer and an external light extraction layer. As for the external light extraction layer, the light extraction efficiency can be improved by providing a film containing microlenses on the outer surface of the substrate, and the microlenses can have various shapes. In addition, since the internal light extraction layer can directly extract light lost in the light waveguide mode, the possibility of using the internal light extraction layer to improve the light extraction efficiency is greater than using the external light extraction layer. In this case, the light scattering effect of the inner light extraction layer can be maximized by mixing materials having different refractive indices, and then the inner light extraction layer is formed by using the mixed materials. However, the size of the scattering elements is therefore optically recognizable, and it is also necessary to mix these materials. In addition, for the life of the OLED, the surface of the internal light extraction layer on which the transparent electrode is disposed must be flat. Specifically, a scattering layer as an internal light extraction layer is inserted between the substrate and the transparent electrode, and the reliability of the transparent electrode is very important for the OLED. The unevenness of the transparent electrode, such as uneven sheet resistance, uneven thickness, or the presence of peaks due to the surface roughness of the internal light extraction layer, directly reduces the lifetime of the OLED. Therefore, the surface roughness of the internal light extraction layer is a factor that must be considered most carefully before forming a transparent electrode on the internal light extraction layer. Especially when the OLED is applied to a lighting device, the surface area of the OLED is an important factor. When the flatness of the transparent electrode cannot be ensured, the OLED may be deteriorated in a short time. Therefore, when an internal light extraction layer is used, a planarization layer needs to be provided between the internal light extraction layer and the transparent electrode. However, the conventional planarization layer is formed of a material having no scattering function. The planarization layer increases the distance from the light emitting layer to the internal light extraction layer. Therefore, the light transmitted by the dipole emission in the form of an evanescent wave will hardly reach the internal light extraction layer, thereby reducing the light extraction efficiency of the OLED device including the OLED.

第10圖是繪製平坦化層的厚度對光萃取效率影響的模擬結果的圖表。通常平坦化層形成為具有500mm或500mm以上的厚度,以得到所需的平坦度。在這種情況下,與沒有平坦化層的情況相比,光萃取效率會降低等同於0.2倍或0.2倍以上的量。應注意的是,第10圖的模擬是以平坦化層形成於最佳化的內光萃取層上來進行。在正常條件下,因厚的平坦化層造成光萃取效率的下降將更為嚴重。FIG. 10 is a graph plotting a simulation result of the effect of the thickness of the planarization layer on the light extraction efficiency. The planarization layer is usually formed to have a thickness of 500 mm or more to obtain a desired flatness. In this case, the light extraction efficiency is reduced by an amount equivalent to 0.2 times or more compared to the case without a planarization layer. It should be noted that the simulation in FIG. 10 is performed by forming a planarization layer on the optimized internal light extraction layer. Under normal conditions, the reduction in light extraction efficiency caused by the thick planarization layer will be more serious.

在本背景部分中揭露的資訊僅提供對本背景之較佳理解,且不應視為承認或任何形式暗示此資訊構成所屬技術領域中具有通常知識者而言為習知的先前技術。The information disclosed in this background section only provides a better understanding of the background and should not be taken as an acknowledgement or any form of suggestion that this information constitutes prior art that is conventional to those skilled in the art.

相關專利文獻Related patent documents

專利文獻1:韓國專利號No.10-0338332(2002年5月15日)Patent Document 1: Korean Patent No. 10-0338332 (May 15, 2002)

本揭露的各個實施態樣提供了用於有機發光二極體(OLED)的光萃取基板、製造其之方法、以及包含其之OLED裝置,其中光萃取基板可允許平坦化層的厚度顯著降低,繼而提升OLED裝置的光萃取效率。Various embodiments of the present disclosure provide a light extraction substrate for an organic light emitting diode (OLED), a method of manufacturing the same, and an OLED device including the same, wherein the light extraction substrate may allow the thickness of the planarization layer to be significantly reduced, Then the light extraction efficiency of the OLED device is improved.

依據一態樣,一種用於OLED的光萃取基板包含:基底基板;及設置於基底基板上的散射層。散射層包含第一金屬氧化物及第二金屬氧化物之混合物,第二金屬氧化物的比表面積大於第一金屬氧化物的比表面積。According to one aspect, a light extraction substrate for an OLED includes: a base substrate; and a scattering layer disposed on the base substrate. The scattering layer includes a mixture of a first metal oxide and a second metal oxide, and the specific surface area of the second metal oxide is larger than that of the first metal oxide.

光萃取基板可更包含設置於散射層上的覆蓋層(capping layer),以使覆蓋層設置於散射層與有機發光二極體(OLED)之間,覆蓋層包含第三金屬氧化物,其比表面積大於第一金屬氧化物與第二金屬氧化物的混合物的比表面積。The light extraction substrate may further include a capping layer disposed on the scattering layer, so that the capping layer is disposed between the scattering layer and the organic light emitting diode (OLED). The capping layer includes a third metal oxide, and its ratio is The surface area is greater than the specific surface area of the mixture of the first metal oxide and the second metal oxide.

第一金屬氧化物至第三金屬氧化物可具有相同化學成分。The first to third metal oxides may have the same chemical composition.

第一金屬氧化物至第三金屬氧化物的每一個可包含金紅石(rutile)或銳鈦礦(anatase)的二氧化鈦。Each of the first to third metal oxides may include rutile or anatase titanium dioxide.

第一金屬氧化物可包含第一聚合體(aggregates),第二金屬氧化物可包含第二聚合體,且第三金屬氧化物可包含第三聚合體。第一聚合體的晶癖(crystal habit)可與第二聚合體及第三聚合體不同,且第二聚合體與第三聚合體可具有相同晶癖。The first metal oxide may include a first aggregate, the second metal oxide may include a second aggregate, and the third metal oxide may include a third aggregate. The crystal habit of the first polymer may be different from the second polymer and the third polymer, and the second polymer and the third polymer may have the same crystal habit.

依據另一態樣,一種製造用於OLED的光萃取基板的方法包含:藉由混合第一金屬氧化物及第二金屬氧化物來製備混合物,第二金屬氧化物之比表面積大於第一金屬氧化物之比表面積;以及藉由以混合物塗佈基底基板以形成散射層。According to another aspect, a method of manufacturing a light extraction substrate for an OLED includes: preparing a mixture by mixing a first metal oxide and a second metal oxide, and a specific surface area of the second metal oxide is greater than that of the first metal oxide Specific surface area of the object; and forming a scattering layer by coating the base substrate with the mixture.

依據又一態樣,一種OLED裝置在沿著由OLED產生的光射出的路徑上包含上述的光萃取基板。According to yet another aspect, an OLED device includes the above-mentioned light extraction substrate on a path along which light generated by the OLED exits.

依據本揭露,覆蓋層設置於散射層與平坦化層之間,以補償散射層的表面粗糙度,藉此可顯著地減少平坦化層的厚度。因此,這可以使OLED與散射層之間的距離最小化,繼而改善OLED裝置的光萃取效率。According to the disclosure, the cover layer is disposed between the scattering layer and the planarization layer to compensate the surface roughness of the scattering layer, thereby significantly reducing the thickness of the planarization layer. Therefore, this can minimize the distance between the OLED and the scattering layer, and then improve the light extraction efficiency of the OLED device.

此外,由於覆蓋層設置於散射層與平坦化層之間,而可以改善平坦化層的平坦度,繼而獲得OLED裝置的可靠性。In addition, since the cover layer is disposed between the scattering layer and the planarization layer, the flatness of the planarization layer can be improved, and the reliability of the OLED device can be obtained.

此外,由於散射層是由具有樹枝狀晶癖的二氧化鈦(TiO2 )形成,所以可在光散射層中形成能散射光的複數個不規則孔。In addition, since the scattering layer is formed of titanium dioxide (TiO 2 ) having a dendritic habit, a plurality of irregular holes capable of scattering light can be formed in the light scattering layer.

此外,光散射粒子可以包含在光散射層中,並且具有核心-外殼結構,其中每個核心與外殼具有不同的折射率。特別的,核心可以形成為中空,繼而更進一步改善OLED裝置的光萃取效率。In addition, the light-scattering particles may be contained in a light-scattering layer and have a core-shell structure, where each core has a different refractive index from the shell. In particular, the core can be formed as a hollow, which can further improve the light extraction efficiency of the OLED device.

本揭露的方法與設備的其他特徵或優點,其將自一起用於解釋本揭露的特定原理之併入於本文中之附圖及本揭露以下實施方式中而顯而易見或更詳細的闡述。The methods and other features or advantages of the device disclosed in this disclosure will be obvious or explained in detail in the accompanying drawings and the following embodiments of the disclosure which are used to explain the specific principles of the disclosure.

現將根據本揭露詳細參考用於有機發光二極體(OLED)之光萃取基板、製造其之方法、及包含其之有機發光二極體裝置,其實施例繪示於附圖中及詳細說明如下,使本揭露所屬技術領域中具有通常知識者可以輕易據以實施本揭露。Reference will now be made in detail to a light extraction substrate for an organic light emitting diode (OLED), a method of manufacturing the same, and an organic light emitting diode device including the same in accordance with this disclosure. An embodiment is shown in the drawings and described in detail The following is to enable those with ordinary knowledge in the technical field to which this disclosure belongs to easily implement this disclosure.

透過此文件參考附圖,其中在不同附圖中將使用相同的元件符號來標示相同或相似的部件。在下面的敘述中,當包含可能使本揭露的標的不清楚的情況下,將省略本文併入之習知功能與部件的詳細敘述。Throughout this document, reference is made to the accompanying drawings, in which the same component symbols will be used to identify the same or similar parts in different drawings. In the following description, a detailed description of conventional functions and components incorporated herein will be omitted when it is unclear which may make the subject matter of the present disclosure.

如第1圖所示,依據示例性的實施例的用於OLED的光萃取基板100是設置於沿著由OLED 10所發出的光射出的路徑上的基板,以提升包含OLED 10的OLED裝置的光萃取效率。光萃取基板100具有保護OLED 10免於受外部環境影響的功能。OLED 10可作為照明裝置的光源使用。As shown in FIG. 1, a light extraction substrate 100 for an OLED according to an exemplary embodiment is a substrate disposed along a path where light emitted by the OLED 10 exits to enhance an OLED device including the OLED 10 Light extraction efficiency. The light extraction substrate 100 has a function of protecting the OLED 10 from an external environment. The OLED 10 can be used as a light source of a lighting device.

雖然並未具體繪製,但OLED 10具有透明陽極、有機發光層以及陰極的多層結構。OLED 10可被夾在根據本實施例的光萃取基板100與面向光萃取基板100的背基板之間,以封裝OLED 10。陽極可由諸如金(Au)、銦(In)或錫(Sn)的金屬、或如氧化銦錫(ITO)的金屬氧化物形成,其具有較大的功函數以促進電洞注入有機發光層。此外,陰極可以是具有較小功函數的鋁(Al)、鋁:鋰(Al:Li)、或鎂:銀(Mg:Ag)所形成的金屬薄膜,以促進電子注入有機發光層。有機發光層可包含依序堆疊在陽極上的電洞注入層、電洞傳輸層、發射層、電子傳輸層以及電子注入層。當OLED 10是用於照明裝置的白色OLED時,發射層可具有例如包含發射藍光的高分子發射層以及發射橙紅光的低分子發射層的多層結構。發射層還可以具有其他各種結構以發射白光。此外,OLED 10可具有串聯結構(tandem structure)。具體來說,串聯OLED 10時,複數個有機發光層可以與形成為電荷產生層(charge generation layers)形成的內連結層(interconnecting layers)交疊。Although not specifically drawn, the OLED 10 has a multilayer structure of a transparent anode, an organic light emitting layer, and a cathode. The OLED 10 may be sandwiched between the light extraction substrate 100 and the back substrate facing the light extraction substrate 100 according to the present embodiment to encapsulate the OLED 10. The anode may be formed of a metal such as gold (Au), indium (In), or tin (Sn), or a metal oxide such as indium tin oxide (ITO), which has a large work function to facilitate hole injection into the organic light emitting layer. In addition, the cathode may be a metal thin film formed of aluminum (Al), aluminum: lithium (Al: Li), or magnesium: silver (Mg: Ag) with a smaller work function to promote electron injection into the organic light emitting layer. The organic light emitting layer may include a hole injection layer, a hole transport layer, an emission layer, an electron transport layer, and an electron injection layer sequentially stacked on the anode. When the OLED 10 is a white OLED for a lighting device, the emission layer may have a multilayer structure including, for example, a polymer emission layer that emits blue light and a low molecular emission layer that emits orange-red light. The emission layer may also have various other structures to emit white light. In addition, the OLED 10 may have a tandem structure. Specifically, when the OLEDs 10 are connected in series, a plurality of organic light-emitting layers may overlap with an interconnecting layer formed as a charge generation layer.

利用這種結構,在陽極與陰極之間施加正向電壓時,來自陰極的電子通過電子注入層和電子傳輸層遷移到發射層,並且來自陽極的電洞通過電洞注入層和電洞傳輸層遷移到發射層。遷移到發射層的電子與電洞彼此再結合因而產生激子。當激子從激發態轉變為基態時發射光。所發射之光亮度與陰極及陽極之間的電流量成比例。With this structure, when a forward voltage is applied between the anode and the cathode, electrons from the cathode migrate to the emission layer through the electron injection layer and the electron transport layer, and holes from the anode pass through the hole injection layer and the hole transport layer. Migration to the emission layer. The electrons and holes that migrate to the emission layer recombine with each other, thereby generating excitons. Light is emitted when an exciton transitions from an excited state to a ground state. The emitted light is proportional to the amount of current between the cathode and anode.

用於改善OLED裝置的光萃取效率的光萃取基板100可包含基底基板110、散射層120、覆蓋層130及平坦化層140。當光萃取基板100設置於沿著由OLED 10所發出的光射出的路徑上時,散射層120、覆蓋層130及平坦化層140形成用於OLED 10的內光萃取層(ILEL),因而作用以增加光萃取量。此將在下文更詳細的描述。The light extraction substrate 100 for improving the light extraction efficiency of the OLED device may include a base substrate 110, a scattering layer 120, a cover layer 130, and a planarization layer 140. When the light extraction substrate 100 is disposed along the path of light emitted by the OLED 10, the scattering layer 120, the cover layer 130, and the planarization layer 140 form an internal light extraction layer (ILEL) for the OLED 10, and thus act To increase light extraction. This will be described in more detail below.

基底基板110係為其一表面上支持設置有散射層120、覆蓋層130及平坦化層140的基板。此外,基底基板110亦可作為設置於沿著由OLED 10所發出的光射出的路徑上之封裝基板,以允許產生的光從其中離開,並保護OLED 10免於外部環境影響。The base substrate 110 is a substrate on one surface of which the scattering layer 120, the cover layer 130, and the planarization layer 140 are supported. In addition, the base substrate 110 can also be used as a packaging substrate disposed along a path of light emitted by the OLED 10 to allow the generated light to exit therefrom and protect the OLED 10 from external environmental influences.

具有優異透光率及機械特性的任何透明基板皆可以作為基底基板110使用。例如,基底110可以由聚合物材料形成,例如熱或紫外線(UV)可固化的有機膜。或者,由例如鈉鈣玻璃(SiO2 -CaO-Na2 O)或鋁矽酸鹽玻璃(SiO2 -Al2 O3 -Na2 O)形成的化學強化玻璃基板可使用作為基底基板110。當包含根據本實施例的光萃取基板100的OLED裝置應用於照明裝置時,基底基板110可以由鈉鈣玻璃形成。此外,由金屬氧化物或金屬氮化物形成的基板可使用作為基底基板110。可撓性基板,更具體地,具有厚度為1.5mm或1.5mm以下的薄玻璃基板可以使用作為基底基板110。可以使用熔合製程或浮式製程來製造薄玻璃基板。Any transparent substrate having excellent light transmittance and mechanical properties can be used as the base substrate 110. For example, the substrate 110 may be formed of a polymer material, such as a thermal or ultraviolet (UV) curable organic film. Alternatively, a chemically strengthened glass substrate formed of, for example, soda lime glass (SiO 2 -CaO-Na 2 O) or aluminosilicate glass (SiO 2 -Al 2 O 3 -Na 2 O) may be used as the base substrate 110. When the OLED device including the light extraction substrate 100 according to the present embodiment is applied to a lighting device, the base substrate 110 may be formed of soda lime glass. In addition, a substrate formed of a metal oxide or a metal nitride can be used as the base substrate 110. As the base substrate 110, a flexible substrate, more specifically, a thin glass substrate having a thickness of 1.5 mm or less can be used. A thin glass substrate can be manufactured using a fusion process or a floating process.

散射層120藉由散射OLED 10所發出的光以用於干擾光波導模式,即是用於改變OLED 10所產生的光的路徑,因而提升OLED裝置的光萃取效率。散射層120形成於基底基板110上。散射層120的厚度可介於0.4㎛至5㎛的範圍。當光萃取基板100應用於OLED 10時,散射層120設置在OLED 10與基底基板110之間。The scattering layer 120 scatters the light emitted by the OLED 10 to interfere with the optical waveguide mode, that is, to change the path of the light generated by the OLED 10, thereby improving the light extraction efficiency of the OLED device. The scattering layer 120 is formed on the base substrate 110. The thickness of the scattering layer 120 may range from 0.4 ㎛ to 5 ㎛. When the light extraction substrate 100 is applied to the OLED 10, the scattering layer 120 is disposed between the OLED 10 and the base substrate 110.

散射層120包含第一金屬氧化物和第二金屬氧化物的混合物。第一和第二金屬氧化物可以具有相同的化學成分,例如二氧化鈦(TiO2)。此外,第一金屬氧化物和第二金屬氧化物可以是金紅石相(rutile phase)或銳鈦礦相(anatase phase)的二氧化鈦(TiO2 )。較佳地,第一和第二金屬氧化物皆為金紅石TiO2 。第一金屬氧化物具有比第二金屬氧化物更小的比表面積。第一金屬氧化物可以包含第一聚合體,第二金屬氧化物可以包含第二聚合體。即便第一聚合體和第二聚合體具有相同的化學組成且是相同的結晶相時,第一聚合體和第二聚合體的比表面積不同。這是因為第一聚合體和第二聚合體的晶癖不同。例如,第一金屬氧化物可以包含具有樹枝狀晶癖的第一聚合體,並且具有約30.4m2 /g的比表面積。第二金屬氧化物可以包含具有桿狀晶癖的第二聚合體,並且具有約92.8m2 /g的比表面積。在這種情況下,依據第一金屬氧化物和第二金屬氧化物的比例形成散射層120的混合物的比表面積可高於30.4m2 /g且低於92.8m2 /g。比表面積使用氣體吸附分析儀(Macsorb HM Model-1208)測量。The scattering layer 120 includes a mixture of a first metal oxide and a second metal oxide. The first and second metal oxides may have the same chemical composition, such as titanium dioxide (TiO2). In addition, the first metal oxide and the second metal oxide may be titanium dioxide (TiO 2 ) in a rutile phase or an anatase phase. Preferably, the first and second metal oxides are both rutile TiO 2 . The first metal oxide has a smaller specific surface area than the second metal oxide. The first metal oxide may include a first polymer, and the second metal oxide may include a second polymer. Even when the first polymer and the second polymer have the same chemical composition and the same crystal phase, the specific surface areas of the first polymer and the second polymer are different. This is because the crystal habit of the first polymer is different from that of the second polymer. For example, the first metal oxide may include a first polymer having a dendritic habit and have a specific surface area of about 30.4 m 2 / g. The second metal oxide may include a second polymer having a rod-like crystal habit, and have a specific surface area of about 92.8 m 2 / g. In this case the specific surface area, the scattering layer 120 is formed of a mixture according to the ratio of the first metal oxide and second metal oxide may be greater than 30.4m 2 / g and less than 92.8m 2 / g. The specific surface area was measured using a gas adsorption analyzer (Macsorb HM Model-1208).

尺寸為30〜50nm的二氧化鈦奈米顆粒可以聚合並形成第一聚合體,並且尺寸為30〜50nm的二氧化鈦奈米顆粒可以聚合並形成第二聚合體。參考第6圖所示的尺寸分析結果,第一聚合體的尺寸可為0.04㎛〜2.7㎛。參考第7圖所示的尺寸分析結果,第二聚合體的尺寸可為0.035㎛~2.7㎛。使用粒度分析儀(Malvern Mastersizer 2000)測量第一聚合體和第二聚合體的尺寸。然而,如上所述,第一聚合體和第二聚合體的聚合製程不同,因此第一聚合體和第二聚合體的形狀也不同。Titanium dioxide nano particles having a size of 30 to 50 nm can be polymerized to form a first polymer, and titanium dioxide nano particles having a size of 30 to 50 nm can be polymerized to form a second polymer. Referring to the dimensional analysis result shown in FIG. 6, the size of the first polymer may be 0.04 ㎛ to 2.7 ㎛. Referring to the size analysis result shown in FIG. 7, the size of the second polymer may be 0.035 ㎛ to 2.7 ㎛. The size of the first polymer and the second polymer was measured using a particle size analyzer (Malvern Mastersizer 2000). However, as described above, the polymerization processes of the first polymer and the second polymer are different, so the shapes of the first polymer and the second polymer are also different.

當第一聚合體和第二聚合體,即散射層120的材料具有如上所述的不同形狀時,散射層120的光散射效應可以最大化。When the materials of the first polymer and the second polymer, that is, the scattering layer 120 have different shapes as described above, the light scattering effect of the scattering layer 120 can be maximized.

雖然沒有具體繪示,但散射層120可以包含複數個孔作為第一光散射元件。散射層120包含樹枝狀的二氧化鈦,因此具有多孔(porous)結構。即是,在散射層中具有可散射光的尺寸的複數個孔。在包含樹枝狀二氧化鈦的散射層120的燒製過程中,在散射層中形成折射率為1的孔,而無需任何額外的孔形成製程。即是,樹枝狀二氧化鈦誘導複數個孔的形成。由於第一金屬氧化物和第二金屬氧化物的二氧化鈦聚合體具有不同的形狀,即分別為樹枝狀和桿狀,因此佔據聚合體之間的空間的孔可以形成為不同的形狀,從而使光散射效應最大化。Although not specifically shown, the scattering layer 120 may include a plurality of holes as the first light scattering element. The scattering layer 120 contains dendritic titanium dioxide and therefore has a porous structure. That is, the scattering layer has a plurality of holes having a size capable of scattering light. During firing of the scattering layer 120 containing dendritic titanium dioxide, holes having a refractive index of 1 are formed in the scattering layer without any additional hole forming process. That is, dendritic titanium dioxide induces the formation of a plurality of holes. Because the titanium dioxide polymers of the first metal oxide and the second metal oxide have different shapes, that is, dendritic and rod-shaped, respectively, the holes occupying the space between the polymers can be formed into different shapes, so that the light The scattering effect is maximized.

此外,散射層120還可以包含複數個光散射粒子作為第二光散射元件。複數個光散射粒子的原始粒子(primary particles)大小可以介於10〜500nm的範圍內。此外,複數個光散射粒子可以設置在面向基底基板110的散射層120的內部的下部。複數個光散射粒子與複數孔協調作用,以形成相對複雜的光散射結構。複數個光散射粒子可與散射層120的金紅石二氧化鈦混合,然後可將其混合物施加到基底基板110上,使得複數個光散射粒子布置或設置在基底基板110上。或者,在形成散射層120之前,可以與形成散射層120分開地將複數個光散射粒子設置在基底基板110上,隨後可以散射層120覆蓋。In addition, the scattering layer 120 may further include a plurality of light scattering particles as the second light scattering element. The size of the primary particles of the plurality of light scattering particles may be in a range of 10 to 500 nm. In addition, a plurality of light scattering particles may be provided in a lower portion of the inside of the scattering layer 120 facing the base substrate 110. The plurality of light scattering particles coordinate with the plurality of holes to form a relatively complex light scattering structure. The plurality of light scattering particles may be mixed with the rutile titanium dioxide of the scattering layer 120, and then the mixture may be applied to the base substrate 110 so that the plurality of light scattering particles are arranged or disposed on the base substrate 110. Alternatively, before the scattering layer 120 is formed, a plurality of light scattering particles may be disposed on the base substrate 110 separately from the formation of the scattering layer 120, and then the scattering layer 120 may be covered.

光散射粒子可以由選自金屬氧化物的候選群組,如二氧化矽(SiO2 )、二氧化鈦(TiO2 )、氧化鋅(ZnO)和二氧化錫(SnO2 )中的一種或兩種或兩種以上的組合形成。此外,光散射粒子可以包含具有不同折射率的至少兩個部分。例如,光散射粒子可以具有核心-外殼結構,其中核心和外殼具有不同的折射率。核心可以形成為中空,並且外殼可以由折射率為1.5〜2.7的材料形成。當光散射粒子形成為這樣的核心-外殼結構時,核心和外殼之間的折射率差可以進一步改善萃取由OLED產生的光的能力。The light scattering particles may be selected from a candidate group of metal oxides, such as one or two of silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ), zinc oxide (ZnO), and tin dioxide (SnO 2 ), or A combination of two or more. In addition, the light scattering particles may include at least two portions having different refractive indexes. For example, light scattering particles may have a core-shell structure, where the core and the shell have different refractive indices. The core may be formed as a hollow, and the shell may be formed of a material having a refractive index of 1.5 to 2.7. When light-scattering particles are formed into such a core-shell structure, the refractive index difference between the core and the shell can further improve the ability to extract light generated by the OLED.

此外,複數個光散射粒子可以包含此核心-外殼結構粒子及具有單個總體折射率的簡單粒子的混合物。In addition, the plurality of light scattering particles may include a mixture of this core-shell structure particle and a simple particle having a single overall refractive index.

散射層120的金紅石二氧化鈦是高折射率(high-refractive index)金屬氧化物,其折射率的範圍為2.5至2.7。當具有折射率為1的複數個孔和具有與孔隙不同的折射率的複數個光散射粒子與散射層120中的金紅石二氧化鈦混合時,可形成複雜的折射率結構,例如高/低折射率結構或高/低/高折射率結構。當這種複雜的折射率結構設置在沿著由OLED 10產生的光被萃取的路徑上時,由OLED 10產生的光可以通過多樣化路徑被萃取,從而最大化萃取由OLED 10產生的光的能力。The rutile titanium dioxide of the scattering layer 120 is a high-refractive index metal oxide, and its refractive index ranges from 2.5 to 2.7. When a plurality of holes having a refractive index of 1 and a plurality of light scattering particles having a refractive index different from the pores are mixed with the rutile titanium dioxide in the scattering layer 120, a complex refractive index structure can be formed, such as high / low refractive index Structure or high / low / high refractive index structure. When such a complex refractive index structure is provided along a path where light generated by the OLED 10 is extracted, light generated by the OLED 10 can be extracted through a variety of paths, thereby maximizing the extraction of light generated by the OLED 10 ability.

覆蓋層130設置於散射層120上。此外,覆蓋層130設置在散射層120與平坦化層140之間。覆蓋層130可以由第三金屬氧化物形成,第三金屬氧化物的比表面積大於散射層120的第一金屬氧化物和第二金屬氧化物的混合物的比表面積。第一金屬氧化物至第三金屬氧化物可具有相同的化學組成。第三金屬氧化物包含第三聚合體。第三聚合體的晶癖可與第一聚合體的晶癖不同,並且可以與第二聚合體的晶癖相同。即是,覆蓋層130可以由金紅石或銳鈦礦的二氧化鈦的桿狀聚合體形成。因此,填充在覆蓋層130內的第三聚集體比充在散射層120內的第一聚合體與第二聚合體的混合物更緊密,由此覆蓋層130的孔隙率小於散射層120的孔隙率。孔的尺寸為10〜500nm,且使散射層120和覆蓋層130具有1〜40%的孔隙率。孔隙率可以使用FIB(聚焦離子束,Focused Ion Beam)測量,此外,孔的大小表示孔的最長直徑的長度。形成覆蓋層130的第三聚合體可以具有與第二聚合體相似的0.035〜2.7㎛的尺寸。此外,覆蓋層130可以形成為在散射層120上具有50nm至200nm範圍的厚度。當散射層120塗布有由與散射層120相同類型的二氧化鈦,即金紅石或銳鈦礦二氧化鈦,較佳為金紅石二氧化鈦形成的覆蓋層130時,可以實現良好塗層性能的優點。此外,當覆蓋層130由與散射層120相同的金紅石二氧化鈦形成時,兩層具有相同的折射率。由於在覆蓋層130和散射層120之間的界面處的附加散射,可能去除變數而使光徑的預測變得困難。如果覆蓋層130由銳鈦礦二氧化鈦形成,則其折射率可能與散射層120的折射率不同。因此,在需要預測光徑的情況下,較佳地,覆蓋層130由金紅石二氧化鈦形成,使其折射率與散射層120的折射率相同。The cover layer 130 is disposed on the scattering layer 120. In addition, the cover layer 130 is disposed between the scattering layer 120 and the planarization layer 140. The cover layer 130 may be formed of a third metal oxide, and the specific surface area of the third metal oxide is larger than that of the mixture of the first metal oxide and the second metal oxide of the scattering layer 120. The first to third metal oxides may have the same chemical composition. The third metal oxide contains a third polymer. The crystal habit of the third polymer may be different from the crystal habit of the first polymer, and may be the same as the crystal habit of the second polymer. That is, the cover layer 130 may be formed of a rod-shaped polymer of titanium dioxide of rutile or anatase. Therefore, the third aggregate filled in the cover layer 130 is denser than the mixture of the first polymer and the second polymer filled in the scattering layer 120, and thus the porosity of the cover layer 130 is smaller than that of the scattering layer 120. . The size of the pores is 10 to 500 nm, and the scattering layer 120 and the cover layer 130 have a porosity of 1 to 40%. The porosity can be measured using FIB (Focused Ion Beam), and the size of the hole indicates the length of the longest diameter of the hole. The third polymer forming the cover layer 130 may have a size similar to that of the second polymer of 0.035 to 2.7 ㎛. In addition, the cover layer 130 may be formed on the scattering layer 120 to have a thickness ranging from 50 nm to 200 nm. When the scattering layer 120 is coated with a cover layer 130 formed of the same type of titanium dioxide as the scattering layer 120, that is, rutile or anatase titanium dioxide, preferably rutile titanium dioxide, the advantage of good coating performance can be achieved. In addition, when the cover layer 130 is formed of the same rutile titanium dioxide as the scattering layer 120, both layers have the same refractive index. Due to the additional scattering at the interface between the cover layer 130 and the scattering layer 120, variables may be removed to make prediction of the optical path difficult. If the cover layer 130 is formed of anatase titanium dioxide, its refractive index may be different from that of the scattering layer 120. Therefore, when it is necessary to predict the optical path, it is preferable that the cover layer 130 is formed of rutile titanium dioxide so that its refractive index is the same as that of the scattering layer 120.

根據本實施例,覆蓋層130設置在散射層120和平坦化層140之間,以減少平坦化層140的厚度。在習知技術中,平坦化層的厚度通常設定為500nm或500nm以上,以獲得期望的平坦度。在這種情況下,如第10圖所示,其光萃取效率降低至相等於沒有平坦化層140時所獲得的光萃取效率程度的0.2倍的量。此表示平坦化層140越薄,光萃取效率越高。由於平坦化層140的厚度由散射層120的表面粗糙度決定,為了減少平坦化層140的厚度,散射層120的表面必須比在平坦化層的厚度為500nm或500nm以上時要較不粗糙。根據本實施例,覆蓋層130用於降低散射層120的表面粗糙度。由於覆蓋層130的表面粗糙度低於散射層120的表面粗糙度,因此可以顯著地減少平坦化層140的厚度。According to the present embodiment, the cover layer 130 is disposed between the scattering layer 120 and the planarization layer 140 to reduce the thickness of the planarization layer 140. In the conventional technique, the thickness of the planarization layer is usually set to 500 nm or more to obtain a desired flatness. In this case, as shown in FIG. 10, the light extraction efficiency is reduced to an amount equivalent to 0.2 times the degree of light extraction efficiency obtained without the planarization layer 140. This means that the thinner the planarization layer 140 is, the higher the light extraction efficiency is. Since the thickness of the planarizing layer 140 is determined by the surface roughness of the scattering layer 120, in order to reduce the thickness of the planarizing layer 140, the surface of the scattering layer 120 must be less rough than when the thickness of the planarizing layer is 500 nm or more. According to the present embodiment, the cover layer 130 is used to reduce the surface roughness of the scattering layer 120. Since the surface roughness of the cover layer 130 is lower than that of the scattering layer 120, the thickness of the planarization layer 140 can be significantly reduced.

平坦化層140設置在覆蓋層130上。平坦化層140與散射層120及覆蓋層130協調作用,從而形成用於OLED 10的內光萃取層。平坦化層140的表面鄰接OLED 10,且更具體地,是與OLED 10的陽極相鄰。當平坦化層140的表面鄰接OLED的陽極時,平坦化層140的表面必須具有高度的平坦度,以防止OLED 10的電特性免於劣化。在這點上,覆蓋層130可使平坦化層140變薄,而傳統的平坦化層需要500nm或500nm以上或800nm或800nm以上的厚度。根據本實施例,由於覆蓋層130以50nm至200nm的厚度範圍設置在散射層120上,平坦化層140的厚度可以在100nm至300nm的範圍內。如第10圖所示,當平坦化層140的厚度減少到該範圍時,可以觀察到OLED裝置的光萃取效率提高相當於0.2倍或更多的量。The planarization layer 140 is disposed on the cover layer 130. The planarizing layer 140 functions in coordination with the scattering layer 120 and the cover layer 130 to form an internal light extraction layer for the OLED 10. The surface of the planarization layer 140 is adjacent to the OLED 10, and more specifically, is adjacent to the anode of the OLED 10. When the surface of the planarization layer 140 is adjacent to the anode of the OLED, the surface of the planarization layer 140 must have a high degree of flatness to prevent the electrical characteristics of the OLED 10 from being deteriorated. In this regard, the cover layer 130 can make the planarization layer 140 thin, while the conventional planarization layer requires a thickness of 500 nm or more or 800 nm or more. According to the present embodiment, since the cover layer 130 is disposed on the scattering layer 120 in a thickness range of 50 nm to 200 nm, the thickness of the planarization layer 140 may be in a range of 100 nm to 300 nm. As shown in FIG. 10, when the thickness of the planarization layer 140 is reduced to this range, it can be observed that the light extraction efficiency of the OLED device is improved by an amount equivalent to 0.2 times or more.

為了使OLED裝置的光萃取效率最大化,平坦化層140可以由折射率不同於覆蓋層130的材料形成。此外,當覆蓋層130和散射層120由相同的金紅石二氧化鈦形成時,覆蓋層130和散射層120具有相同的折射率。在這種情況下,因平坦化層140與覆蓋層130之間的相同量而使平坦化層140與散射層120之間亦存在折射率的差。平坦化層140可以由有機材料、無機材料或有機和無機材料的混合材料形成。折射率為1.3〜1.5的聚二甲基矽氧烷(polydimethylsiloxane,PDMS)可以使用作為有機材料。平坦化層140還可以由選自折射率為1.7〜2.7的金屬氧化物,例如氧化鎂(MgO)、氧化鋁(Al2 O3 )、二氧化鋯(ZrO2 )、二氧化錫(SnO2 )、氧化鋅(ZnO)、二氧化矽(SiO2 )或二氧化鈦(TiO2 )、以及高折射率聚合物所形成,但是由於散射層120和覆蓋層130由具有高折射率的二氧化鈦(TiO2 )形成,所以材料的折射率必須低於二氧化鈦(TiO2 )的折射率。當將具有不同折射率層的層彼此堆疊的多層結構的內光萃取層設置在沿著由OLED 10產生的光被發射出的路徑上時,內光萃取層的不同折射率可以改善OLED裝置的光萃取效率。In order to maximize the light extraction efficiency of the OLED device, the planarization layer 140 may be formed of a material having a refractive index different from that of the cover layer 130. In addition, when the cover layer 130 and the scattering layer 120 are formed of the same rutile titanium dioxide, the cover layer 130 and the scattering layer 120 have the same refractive index. In this case, there is also a difference in refractive index between the planarizing layer 140 and the scattering layer 120 due to the same amount between the planarizing layer 140 and the cover layer 130. The planarization layer 140 may be formed of an organic material, an inorganic material, or a mixed material of organic and inorganic materials. Polydimethylsiloxane (PDMS) having a refractive index of 1.3 to 1.5 can be used as an organic material. The planarization layer 140 may also be selected from metal oxides having a refractive index of 1.7 to 2.7, such as magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), zirconium dioxide (ZrO 2 ), and tin dioxide (SnO 2 ), Zinc oxide (ZnO), silicon dioxide (SiO 2 ) or titanium dioxide (TiO 2 ), and a high refractive index polymer, but since the scattering layer 120 and the cover layer 130 are made of titanium dioxide (TiO 2 ), So the refractive index of the material must be lower than that of titanium dioxide (TiO 2 ). When the inner light extraction layer of a multilayer structure in which layers having different refractive index layers are stacked on each other is provided along a path in which light generated by the OLED 10 is emitted, different refractive indexes of the inner light extraction layer can improve the OLED device. Light extraction efficiency.

如上所述,根據本實施例的用於OLED的光萃取基板100包含在散射層和平坦化層140之間的覆蓋層130,覆蓋層130可顯著地減少平坦化層140的厚度。As described above, the light extraction substrate 100 for OLED according to the present embodiment includes the cover layer 130 between the scattering layer and the planarization layer 140, and the cover layer 130 can significantly reduce the thickness of the planarization layer 140.

下列表1顯示使用原子力顯微鏡(AFM)基於覆蓋層的存在和覆蓋層的厚度而不同的平坦化層的表面粗糙度之測量結果。Table 1 below shows the measurement results of the surface roughness of the flattening layer using an atomic force microscope (AFM) based on the presence of the cover layer and the thickness of the cover layer.

表1 Table 1

如第2圖的電子顯微鏡影像所示,比較例1表示在厚度為1.21㎛的散射層上形成厚度為0.86㎛的平坦化層的表面粗糙度。如第3圖的電子顯微鏡影像所示,本發明實施例1表示在厚度為1.02㎛的散射層及厚度為100nm的覆蓋層上形成厚度為100nm的平坦化層的表面粗糙度。如第4圖的電子顯微鏡圖像所示,本發明實施例2表示在厚度為1.2㎛的散射層及厚度為100nm的覆蓋層上形成厚度為200nm的平坦化層的表面粗糙度。As shown in the electron microscope image in FIG. 2, Comparative Example 1 shows the surface roughness of a flattened layer having a thickness of 0.86 形成 on a scattering layer having a thickness of 1.21 ㎛. As shown in the electron microscope image in FIG. 3, Example 1 of the present invention shows the surface roughness of a flattening layer having a thickness of 100 nm formed on a scattering layer having a thickness of 1.02 ㎛ and a cover layer having a thickness of 100 nm. As shown in the electron microscope image in FIG. 4, Example 2 of the present invention shows the surface roughness of a flattening layer having a thickness of 200 nm formed on a scattering layer having a thickness of 1.2 ㎛ and a cover layer having a thickness of 100 nm.

參考上述表1,在比較例1中,平坦化層的表面粗糙度Rmax被測定為139.1。在本發明實施例1中,平坦化層的厚度減少到比較例1的1/8,且平坦化層的表面粗糙度Rmax被測定為162.5nm。雖然本發明實施例1的厚度顯著降低,但是觀察到平坦化層的表面粗糙度Rmax與比較例1的表面粗糙度Rmax沒有顯著差異。在本發明實施例2中,平坦化層減少到比較例1的1/4,且平坦化層的表面粗糙度Rmax測定為79.4nm。從本發明實施例1和2可以看出,當在散射層和平坦化層之間形成覆蓋層時,即使在形成薄平坦化層的情況下也可以獲得優異的表面粗糙度。顯而易見的是,覆蓋層可以顯著地減少平坦化層的厚度。當平坦化層的厚度減少時,也可以降低OLED與散射層之間的距離,從而進一步改善OLED裝置的光萃取效率。事實上,在具有散射層和平坦化層的多層結構的內光萃取層設置在OLED的前方的情況下,所測量改善的光萃取效率的量等同於沒有提供內光萃取層的情況的1.5倍。此外,在具有包含散射層、覆蓋層和平坦化層的多層結構的內光萃取層設置在OLED的前面,並且因此散射層和OLED之間的距離減少的情況下,所測量改善的光萃取效率的量等同於沒有提供內光萃取層的情況下的1.8倍。Referring to Table 1 described above, in Comparative Example 1, the surface roughness Rmax of the planarization layer was measured to be 139.1. In Example 1 of the present invention, the thickness of the planarization layer was reduced to 1/8 of Comparative Example 1, and the surface roughness Rmax of the planarization layer was measured to be 162.5 nm. Although the thickness of Example 1 of the present invention was significantly reduced, it was observed that the surface roughness Rmax of the planarization layer was not significantly different from the surface roughness Rmax of Comparative Example 1. In Example 2 of the present invention, the planarization layer was reduced to 1/4 of Comparative Example 1, and the surface roughness Rmax of the planarization layer was measured to be 79.4 nm. As can be seen from Examples 1 and 2 of the present invention, when a cover layer is formed between the scattering layer and the planarization layer, an excellent surface roughness can be obtained even in the case of forming a thin planarization layer. It is obvious that the cover layer can significantly reduce the thickness of the planarization layer. When the thickness of the planarization layer is reduced, the distance between the OLED and the scattering layer can also be reduced, thereby further improving the light extraction efficiency of the OLED device. In fact, in the case where the internal light extraction layer having a multilayer structure of a scattering layer and a planarization layer is disposed in front of the OLED, the measured amount of improved light extraction efficiency is equivalent to 1.5 times that in the case where no internal light extraction layer is provided . In addition, in the case where the internal light extraction layer having a multilayer structure including a scattering layer, a cover layer, and a planarization layer is provided in front of the OLED, and thus the distance between the scattering layer and the OLED is reduced, the improved light extraction efficiency is measured The amount is equivalent to 1.8 times in the case where an internal light extraction layer is not provided.

此外可以觀察到,當覆蓋層設置在散射層和平坦化層之間時,在部份情況下,可以獲得比在提供較厚平坦化層且沒有覆蓋層的情況下更優異的平坦度。平坦化層的平坦度越大,OLED的可靠性可越高。In addition, it can be observed that when the cover layer is disposed between the scattering layer and the planarization layer, in some cases, better flatness can be obtained than in the case where a thicker planarization layer is provided without the cover layer. The greater the flatness of the planarization layer, the higher the reliability of the OLED may be.

在下文中,將參考第5圖,描述依據示例性實施例的製造用於OLED的光萃取基板的方法。關於光萃取基板的部件的元件符號,將參考第1圖中的元件符號。Hereinafter, a method of manufacturing a light extraction substrate for an OLED according to an exemplary embodiment will be described with reference to FIG. 5. Regarding the component symbols of the components of the light extraction substrate, reference will be made to the component symbols in FIG. 1.

第5圖係為繪製依據示例性實施例的製造用於OLED的光萃取基板的方法的流程圖。FIG. 5 is a flowchart illustrating a method of manufacturing a light extraction substrate for an OLED according to an exemplary embodiment.

如第5圖所示,根據本實施例的用於OLED的光萃取基板的製造方法包含:混合製備步驟S1、散射層形成步驟S2、覆蓋層形成步驟S3以及平坦化層形成步驟S4。As shown in FIG. 5, the method for manufacturing a light extraction substrate for OLED according to this embodiment includes a hybrid preparation step S1, a scattering layer formation step S2, a cover layer formation step S3, and a planarization layer formation step S4.

首先,在混合物製備步驟S1中,藉由混合具有不同比表面積的兩種類型的二氧化鈦(TiO2 )來製備混合物分散液。例如,透過將金紅石或銳鈦礦的二氧化鈦(TiO2 ),較佳地將具有樹枝狀晶癖的金紅石二氧化鈦(TiO2 )分散在第一有機溶劑中來製備第一分散液。較佳地,金紅石二氧化鈦(TiO2 )是以重量為5%〜60%的量分散在第一有機溶劑中。較佳地,使用H2 O作為第一有機溶劑。如第8圖的電子顯微鏡影像所示,透過製備第一分散液的操作產生的第一分散液中存在樹枝狀二氧化鈦(TiO2 )聚合體。此外,在混合物製備步驟S1中,藉由將金紅石或銳鈦礦的二氧化鈦(TiO2 ),較佳地將具有桿狀晶癖的金紅石二氧化鈦(TiO2 )分散到第二有機溶劑中來製備第二分散液,分散在第二有機溶劑中紅石二氧化鈦(TiO2 )的比表面積大於分散在第一有機溶劑中的金紅石二氧化鈦(TiO2 )的比表面積。較佳地,金紅石二氧化鈦(TiO2 )是以重量為5%〜60%的量分散在第二有機溶劑中。較佳地,使用乙醇(EtOH)作為第二有機溶劑。如第9圖的電子顯微鏡影像所示,藉由製備第二分散液的操作而產生的第二分散液中存在桿狀二氧化鈦(TiO2 )聚合體。如上所述,混合物製備步驟S1可以透過混合藉由製備第一分散液的操作產生的第一分散液和藉由製備第二分散液的操作產生的第二分散液來製備混合物分散液。在混合物製備步驟S1中,可以在混合物分散液中混合複數個光散射粒子。Two types of titanium oxide (TiO 2) mixture is first prepared, the mixture prepared at step S1, by mixing with different specific surface areas of dispersed liquid. For example, the first dispersion liquid is prepared by dispersing rutile or anatase titanium dioxide (TiO 2 ), preferably rutile titanium dioxide (TiO 2 ) having a dendritic habit in a first organic solvent. Preferably, the rutile titanium dioxide (TiO 2 ) is dispersed in the first organic solvent in an amount of 5% to 60% by weight. Preferably, H 2 O is used as the first organic solvent. As shown in the electron microscope image of FIG. 8, a dendritic titanium dioxide (TiO 2 ) polymer is present in the first dispersion liquid produced through the operation of preparing the first dispersion liquid. In addition, in the mixture preparation step S1, by dispersing rutile or anatase titanium dioxide (TiO 2 ), preferably rutile titanium dioxide (TiO 2 ) having a rod-shaped crystal habit is dispersed in the second organic solvent. A second dispersion is prepared, and the specific surface area of the redstone titanium dioxide (TiO 2 ) dispersed in the second organic solvent is larger than that of the rutile titanium dioxide (TiO 2 ) dispersed in the first organic solvent. Preferably, the rutile titanium dioxide (TiO 2 ) is dispersed in the second organic solvent in an amount of 5% to 60% by weight. Preferably, ethanol (EtOH) is used as the second organic solvent. As shown in the electron microscope image of FIG. 9, a rod-shaped titanium dioxide (TiO 2 ) polymer is present in the second dispersion liquid produced by the operation of preparing the second dispersion liquid. As described above, the mixture preparation step S1 can prepare the mixture dispersion by mixing the first dispersion liquid produced by the operation of preparing the first dispersion liquid and the second dispersion liquid produced by the operation of preparing the second dispersion liquid. In the mixture preparation step S1, a plurality of light scattering particles may be mixed in the mixture dispersion.

然後,在散射層形成步驟S2中,藉由將混合物分散液塗佈基底基板110來形成散射層120。在散射層形成步驟S2中,散射層120可以藉由塗佈方法形成,例如棒式塗佈、狹縫模具塗佈、旋轉塗佈或浸漬。散射層120可以形成為具有0.4㎛至5㎛範圍的厚度。在散射層120的內部形成複數孔,而不需要任何額外的操作,且在混合製備步驟S1中的混合在混合分散液中的複數個光散射粒子較佳地設置在散射層120的底部。Then, in the scattering layer forming step S2, the scattering layer 120 is formed by applying the mixture dispersion liquid to the base substrate 110. In the scattering layer forming step S2, the scattering layer 120 may be formed by a coating method, such as bar coating, slit die coating, spin coating, or dipping. The scattering layer 120 may be formed to have a thickness ranging from 0.4 ㎛ to 5 ㎛. A plurality of holes are formed in the inside of the scattering layer 120 without any additional operation, and the plurality of light scattering particles mixed in the mixed dispersion liquid in the mixing preparation step S1 are preferably disposed at the bottom of the scattering layer 120.

接著,在覆蓋層形成步驟S3中,藉由將具有相對大的比表面積的二氧化鈦(TiO2 )分散到有機溶劑中所產生的第三分散液塗佈散射層120來形成覆蓋層130,例如,透過製備第二分散液的操作產生的第二分散液(即,第二分散液可以作為第三分散液使用)。在覆蓋層形成步驟S3中,覆蓋層130可以藉由塗佈方法形成,如棒式塗佈、狹縫模具塗佈、旋轉塗佈或浸漬。覆蓋層130可以形成為具有50nm至200nm範圍的厚度。Next, in the cover layer forming step S3, the cover layer 130 is formed by coating the scattering layer 120 with a third dispersion liquid produced by dispersing titanium dioxide (TiO 2 ) having a relatively large specific surface area in an organic solvent, for example, The second dispersion liquid produced by the operation of preparing the second dispersion liquid (that is, the second dispersion liquid can be used as the third dispersion liquid). In the cover layer forming step S3, the cover layer 130 may be formed by a coating method, such as bar coating, slit die coating, spin coating, or dipping. The cover layer 130 may be formed to have a thickness ranging from 50 nm to 200 nm.

最後,在平坦化層形成步驟S4中,在覆蓋層130上形成平坦化層140。平坦化層140可以藉由塗佈方法形成,例如棒式塗佈、狹縫模具塗佈、旋轉塗佈或浸漬。由於覆蓋層130形成在散射層120上,因而平坦化層140可以形成為具有從100nm到300nm範圍的較薄厚度。Finally, in the planarization layer forming step S4, a planarization layer 140 is formed on the cover layer 130. The planarization layer 140 may be formed by a coating method, such as a bar coating, a slit die coating, a spin coating, or a dipping. Since the cover layer 130 is formed on the scattering layer 120, the planarization layer 140 may be formed to have a thin thickness ranging from 100 nm to 300 nm.

當平坦化層形成步驟S4完成時,即製造用於OLED的光萃取基板100,其中OLED 10和散射層120之間的距離由於平坦化層140的厚度顯著減少而最小化。When the planarization layer forming step S4 is completed, a light extraction substrate 100 for an OLED is manufactured, wherein the distance between the OLED 10 and the scattering layer 120 is minimized due to a significant reduction in the thickness of the planarization layer 140.

本揭露的具體示例性實施例的上述描述已配合附圖呈現。其並不旨在窮舉或將限制本揭露所公開的精確形式,並且顯而易見的,對於本揭露所屬技術領域中具有通常知識者鑑於以上教示可能進行許多修改和變化。The foregoing descriptions of specific exemplary embodiments of the present disclosure have been presented in conjunction with the accompanying drawings. It is not intended to be exhaustive or to limit the precise form disclosed in this disclosure, and it is obvious that many modifications and changes may be made by those having ordinary knowledge in the technical field to which this disclosure pertains in light of the above teachings.

因此,本揭露的範圍不限於前述實施例,而是由所附申請專利範圍及其等同物所定義。Therefore, the scope of this disclosure is not limited to the foregoing embodiments, but is defined by the scope of the attached patent applications and their equivalents.

10‧‧‧OLED10‧‧‧OLED

100‧‧‧光萃取基板100‧‧‧light extraction substrate

110‧‧‧基底基板110‧‧‧ base substrate

120‧‧‧散射層120‧‧‧ scattering layer

130‧‧‧覆蓋層130‧‧‧ Overlay

140‧‧‧平坦化層140‧‧‧ flattening layer

S1‧‧‧混合物製備步驟S1‧‧‧ Mixture preparation steps

S2‧‧‧散射層形成步驟S2‧‧‧Scattering layer formation steps

S3‧‧‧覆蓋層形成步驟S3‧‧‧ Overlay formation step

S4‧‧‧平坦化層形成步驟S4‧‧‧Plane formation step

第1圖係為繪製依據示例性實施例的包含設置在沿著由OLED產生的光射出的路徑上的光萃取基板的OLED裝置的斷面圖;FIG. 1 is a cross-sectional view of an OLED device including a light extraction substrate disposed along a path where light generated by the OLED is emitted according to an exemplary embodiment; FIG.

第2圖係為依據比較例1的用於OLED的光萃取基板的斷面的電子顯微鏡影像;FIG. 2 is an electron microscope image of a cross section of a light extraction substrate for OLED according to Comparative Example 1;

第3圖係為依據實施例1的用於OLED的光萃取基板的斷面的電子顯微鏡影像;FIG. 3 is an electron microscope image of a cross section of a light extraction substrate for an OLED according to Example 1;

第4圖係為依據實施例2的用於OLED的光萃取基板的斷面的電子顯微鏡影像;FIG. 4 is an electron microscope image of a cross section of a light extraction substrate for an OLED according to Example 2;

第5圖係為繪製依據示例性實施例的製造用於OLED的光萃取基板的方法的流程圖;FIG. 5 is a flowchart illustrating a method of manufacturing a light extraction substrate for an OLED according to an exemplary embodiment; FIG.

第6圖係為繪製分析第一金屬氧化物的聚合體的尺寸的結果之圖表;Figure 6 is a graph plotting the results of analyzing the size of the polymer of the first metal oxide;

第7圖係為繪製分析第二金屬氧化物及第三金屬氧化物的聚合體的尺寸的結果之圖表;FIG. 7 is a graph plotting the results of analyzing the sizes of the polymer of the second metal oxide and the third metal oxide;

第8圖係為於製造用於OLED的光萃取基板的方法中使用的第一分散液的電子顯微鏡影像;FIG. 8 is an electron microscope image of a first dispersion liquid used in a method for manufacturing a light extraction substrate for an OLED;

第9圖係為於製造用於OLED的光萃取基板的方法中使用的第二分散液的電子顯微鏡影像;FIG. 9 is an electron microscope image of a second dispersion liquid used in a method for manufacturing a light extraction substrate for an OLED;

第10圖係繪製平坦化層的厚度對光萃取效率的影響的模擬結果的圖表。FIG. 10 is a graph plotting simulation results of the effect of the thickness of the planarization layer on the light extraction efficiency.

Claims (40)

一種用於有機發光二極體的光萃取基板,其包含:一基底基板;以及一散射層,設置在該基底基板上,該散射層包含一第一金屬氧化物及一第二金屬氧化物之一混合物,該第二金屬氧化物的比表面積較該第一金屬氧化物的比表面積大,其中該第一金屬氧化物包含第一聚合體,且該第二金屬氧化物包含第二聚合體,該第一聚合體與該第二聚合體之晶癖不同,其中該第一聚合體具有樹枝狀晶癖且該第二聚合體具有桿狀晶癖。 A light extraction substrate for an organic light emitting diode includes: a base substrate; and a scattering layer disposed on the base substrate. The scattering layer includes a first metal oxide and a second metal oxide. A mixture, the specific surface area of the second metal oxide is greater than the specific surface area of the first metal oxide, wherein the first metal oxide includes a first polymer, and the second metal oxide includes a second polymer, The first polymer is different from the second polymer, wherein the first polymer has a dendritic crystal habit and the second polymer has a rod crystal habit. 如申請專利範圍第1項所述之光萃取基板,其更包含設置於該散射層上的一覆蓋層,以使該覆蓋層設置於該散射層與一有機發光二極體之間,該覆蓋層包含一第三金屬氧化物,其比表面積大於該第一金屬氧化物與該第二金屬氧化物的該混合物。 The light extraction substrate according to item 1 of the patent application scope further includes a cover layer disposed on the scattering layer, so that the cover layer is disposed between the scattering layer and an organic light emitting diode, and the cover The layer includes a third metal oxide having a specific surface area larger than the mixture of the first metal oxide and the second metal oxide. 如申請專利範圍第2項所述之光萃取基板,其中該第一金屬氧化物至該第三金屬氧化物具有相同化學成分。 The light extraction substrate according to item 2 of the scope of the patent application, wherein the first metal oxide to the third metal oxide have the same chemical composition. 如申請專利範圍第3項所述之光萃取基板,其中該第一金屬氧化物至該第三金屬氧化物具有相同折射率。 The light extraction substrate according to item 3 of the scope of patent application, wherein the first metal oxide to the third metal oxide have the same refractive index. 如申請專利範圍第3項所述之光萃取基板,其中該第一金屬氧化物至該第三金屬氧化物具有相同晶相。 The light extraction substrate according to item 3 of the scope of the patent application, wherein the first metal oxide to the third metal oxide have the same crystal phase. 如申請專利範圍第3項所述之光萃取基板,其中該第一金屬氧化物至該第三金屬氧化物的每一個包含金紅石相或銳鈦礦相的二氧化鈦。 The light extraction substrate according to item 3 of the scope of the patent application, wherein each of the first metal oxide to the third metal oxide includes titanium dioxide in a rutile phase or an anatase phase. 如申請專利範圍第3項所述之光萃取基板,其中該第三金屬氧化物包含第三聚合體,及該第一聚合體與該第三聚合體的晶癖不同,且該第二聚合體及該第三聚合體具有相同的晶癖。 The light extraction substrate according to item 3 of the scope of patent application, wherein the third metal oxide includes a third polymer, and the first polymer and the third polymer have different crystal habit, and the second polymer And this third polymer has the same crystal habit. 如申請專利範圍第1項所述之光萃取基板,其中該第一聚合體之大小介於0.04μm至2.7μm。 The light extraction substrate according to item 1 of the scope of patent application, wherein the size of the first polymer is between 0.04 μm and 2.7 μm. 如申請專利範圍第7項所述之光萃取基板,其中該第三聚合體具有桿狀晶癖。 The light extraction substrate according to item 7 of the patent application scope, wherein the third polymer has a rod crystal habit. 如申請專利範圍第9項所述之光萃取基板,其中該第二聚合體及第三聚合體之大小介於0.035μm至2.7μm。 The light extraction substrate according to item 9 of the scope of the patent application, wherein the size of the second polymer and the third polymer is between 0.035 μm and 2.7 μm. 如申請專利範圍第7項所述之光萃取基板,其中該第一聚合體及該第二聚合體被填充於該散射層,使該散射層產生孔隙;且該第三聚合體被填充於該覆蓋層,使該覆蓋層產生孔隙。 The light extraction substrate according to item 7 of the scope of the patent application, wherein the first polymer and the second polymer are filled in the scattering layer, so that the scattering layer generates pores; and the third polymer is filled in the The cover layer makes the cover layer porous. 如申請專利範圍第11項所述之光萃取基板,其中該散射層及該覆蓋層的孔隙率介於1%至40%。 The light extraction substrate according to item 11 of the application, wherein the porosity of the scattering layer and the cover layer is between 1% and 40%. 如申請專利範圍第11項所述之光萃取基板,其中產生在該散射層之孔隙的大小及產生在該覆蓋層之孔隙的大小介於10nm至500nm。 The light extraction substrate according to item 11 of the application, wherein the size of the pores generated in the scattering layer and the size of the pores generated in the cover layer are between 10 nm and 500 nm. 如申請專利範圍第11項所述之光萃取基板,其中填充於該覆蓋層的該第三聚合體比填充於該散射層的該第一聚合體及該第二聚合體填充更緊密,因而該散射層之孔隙率大於該覆蓋層之孔隙率。 The light extraction substrate according to item 11 of the scope of patent application, wherein the third polymer filled in the cover layer is more densely packed than the first polymer and the second polymer filled in the scattering layer, so the The porosity of the scattering layer is greater than the porosity of the cover layer. 如申請專利範圍第11項所述之光萃取基板,其中該散射層更 包含複數個光散射粒子。 The light extraction substrate according to item 11 of the patent application scope, wherein the scattering layer is more Contains a number of light scattering particles. 如申請專利範圍第15項所述之光萃取基板,其中該複數個光散射粒子中的每一個包含至少兩個部分,該至少兩個部分具有不同折射率。 The light extraction substrate according to item 15 of the scope of the patent application, wherein each of the plurality of light scattering particles includes at least two parts, and the at least two parts have different refractive indexes. 如申請專利範圍第16項所述之光萃取基板,其中該至少兩個部分包含一核心及包圍該核心的一外殼,該外殼與該核心之折射率不同。 The light extraction substrate according to item 16 of the scope of the patent application, wherein the at least two parts include a core and a shell surrounding the core, and the shell has a different refractive index from the core. 如申請專利範圍第17項所述之光萃取基板,其中該核心為空心。 The light extraction substrate according to item 17 of the scope of the patent application, wherein the core is hollow. 如申請專利範圍第17項所述之光萃取基板,其中該外殼之折射率介於1.5至2.7。 The light extraction substrate according to item 17 of the scope of patent application, wherein the refractive index of the shell is between 1.5 and 2.7. 如申請專利範圍第2項所述之光萃取基板,其中該覆蓋層之厚度介於50nm至200nm。 The light extraction substrate according to item 2 of the patent application range, wherein the thickness of the cover layer is between 50 nm and 200 nm. 如申請專利範圍第2項所述之光萃取基板,其更包含設置於該覆蓋層上的一平坦化層,以使該平坦化層設置於該覆蓋層與該有機發光二極體之間。 The light extraction substrate according to item 2 of the patent application scope, further comprising a planarization layer disposed on the cover layer, so that the planarization layer is disposed between the cover layer and the organic light emitting diode. 如申請專利範圍第21項所述之光萃取基板,其中該平坦化層之表面粗糙度(Ra)小於該散射層及該覆蓋層的每一個的表面粗糙度(Ra)。 The light extraction substrate according to item 21 of the patent application scope, wherein a surface roughness (Ra) of the planarization layer is smaller than a surface roughness (Ra) of each of the scattering layer and the cover layer. 如申請專利範圍第21項所述之光萃取基板,其中該平坦化層之厚度介於100nm至300nm。 The light extraction substrate according to item 21 of the scope of patent application, wherein the thickness of the planarization layer is between 100 nm and 300 nm. 如申請專利範圍第21項所述之光萃取基板,其中該平坦化層之折射率與該覆蓋層之折射率不同。 The light extraction substrate according to item 21 of the application, wherein the refractive index of the planarization layer is different from the refractive index of the cover layer. 如申請專利範圍第24項所述之光萃取基板,其中該平坦化層包含有機材料、無機材料以及有機和無機材料的混合材料中的一種。 The light extraction substrate as described in claim 24, wherein the planarization layer includes one of an organic material, an inorganic material, and a mixed material of organic and inorganic materials. 如申請專利範圍第24項所述之光萃取基板,其中該平坦化層以折射率介於1.3至2.7的材料形成。 The light extraction substrate according to item 24 of the application, wherein the planarization layer is formed of a material having a refractive index between 1.3 and 2.7. 如申請專利範圍第21項所述之光萃取基板,其中該散射層、該覆蓋層及該平坦化層設置於該基底基板與該有機發光二極體之間,以形成用於該有機發光二極體的一內光萃取層。 The light extraction substrate according to item 21 of the patent application scope, wherein the scattering layer, the cover layer, and the planarization layer are disposed between the base substrate and the organic light emitting diode to form the organic light emitting diode. An internal light extraction layer of the polar body. 如申請專利範圍第1項所述之光萃取基板,其中該散射層的厚度介於0.4μm至5μm。 The light extraction substrate according to item 1 of the scope of patent application, wherein the thickness of the scattering layer is between 0.4 μm and 5 μm. 如申請專利範圍第1項所述之光萃取基板,其中該基底基板包含一可撓性基板。 The light extraction substrate according to item 1 of the patent application scope, wherein the base substrate comprises a flexible substrate. 如申請專利範圍第29項所述之光萃取基板,其中該基底基板包含厚度為1.5mm或1.5mm以下的薄玻璃板。 The light extraction substrate according to item 29 of the patent application scope, wherein the base substrate comprises a thin glass plate having a thickness of 1.5 mm or less. 一種在沿著由有機發光二極體所產生的光射出的路徑上包含申請專利範圍第1項至第30項之任一項所述之光萃取基板之有機發光二極體裝置。 An organic light-emitting diode device including a light extraction substrate according to any one of the first to the thirtieth of the patent application scope along the path of light emitted by the organic light-emitting diode. 一種製造用於有機發光二極體的光萃取基板的方法,其包含:藉由混合一第一金屬氧化物及一第二金屬氧化物製備一混合物,該第二金屬氧化物之比表面積大於該第一金屬氧化物;以及以該混合物塗佈一基底基板來形成一散射層,其中該第一金屬氧化物包含第一聚合體,且該第二金屬氧化物包含第二聚合體,該第一聚合體與該第二聚合體之晶癖不同, 其中該第一聚合體具有樹枝狀晶癖且該第二聚合體具有桿狀晶癖。 A method for manufacturing a light extraction substrate for an organic light emitting diode, comprising: preparing a mixture by mixing a first metal oxide and a second metal oxide, wherein a specific surface area of the second metal oxide is greater than the A first metal oxide; and coating a base substrate with the mixture to form a scattering layer, wherein the first metal oxide includes a first polymer, and the second metal oxide includes a second polymer, the first The polymer is different from this second polymer, Wherein the first polymer has a dendritic crystal habit and the second polymer has a rod crystal habit. 如申請專利範圍第32項所述之方法,其中該第一金屬氧化物及該第二金屬氧化物具有相同化學成分。 The method according to item 32 of the scope of patent application, wherein the first metal oxide and the second metal oxide have the same chemical composition. 如申請專利範圍第32項所述之方法,其中該混合物之製備步驟包含:藉由將該第一金屬氧化物分散至一第一有機溶劑以製備一第一分散液,以及藉由將該第二金屬氧化物分散至一第二有機溶劑以製備一第二分散液;以及將該第一分散液及該第二分散液混合,以製備該混合物。 The method according to item 32 of the scope of patent application, wherein the preparing step of the mixture comprises: preparing a first dispersion liquid by dispersing the first metal oxide into a first organic solvent; and Dispersing the second metal oxide into a second organic solvent to prepare a second dispersion; and mixing the first dispersion and the second dispersion to prepare the mixture. 如申請專利範圍第34項所述之方法,其中在製備該第一分散液的操作中,該第一金屬氧化物以5至60的重量百分比的量分散在該第一有機溶劑中,及在製備該第二分散液的操作中,該第二金屬氧化物以5至60的重量百分比的量分散在該第二有機溶劑中。 The method as described in claim 34, wherein in the operation for preparing the first dispersion, the first metal oxide is dispersed in the first organic solvent in an amount of 5 to 60% by weight, and In the operation of preparing the second dispersion liquid, the second metal oxide is dispersed in the second organic solvent in an amount of 5 to 60% by weight. 如申請專利範圍第34項所述之方法,其中該第一金屬氧化物及該第二金屬氧化物的每一個包含金紅石或銳鈦礦的二氧化鈦,該第一有機溶劑包含H2O,及該第二有機溶劑包含EtOH。 The method as described in claim 34, wherein each of the first metal oxide and the second metal oxide comprises rutile or anatase titanium dioxide, the first organic solvent comprises H 2 O, and The second organic solvent contains EtOH. 如申請專利範圍第32項所述之方法,其中,在形成該散射層的步驟期間,以該混合物塗佈該基底基板,以使該散射層的厚度介於0.4μm至5μm。 The method as described in claim 32, wherein during the step of forming the scattering layer, the base substrate is coated with the mixture so that the thickness of the scattering layer is between 0.4 μm and 5 μm. 如申請專利範圍第32項所述之方法,其更包含在形成該散射層的步驟之後,以該第二金屬氧化物分散在一有機溶劑中的一 分散液塗佈該散射層以形成一覆蓋層。 The method according to item 32 of the patent application scope, further comprising a step of dispersing the second metal oxide in an organic solvent after the step of forming the scattering layer. The dispersion liquid coats the scattering layer to form a cover layer. 如申請專利範圍第38項所述之方法,其中在形成該覆蓋層的步驟期間,該散射層以該分散液塗佈,以使該覆蓋層的厚度介於50nm至200nm。 The method of claim 38, wherein during the step of forming the cover layer, the scattering layer is coated with the dispersion so that the thickness of the cover layer is between 50 nm and 200 nm. 如申請專利範圍第38項所述之方法,其更包含在形成該覆蓋層的步驟之後,形成一平坦化層於該覆蓋層上,以使該平坦化層之厚度介於100nm至300nm。 The method according to item 38 of the patent application scope, further comprising, after the step of forming the cover layer, forming a planarization layer on the cover layer so that the thickness of the planarization layer is between 100 nm and 300 nm.
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TW201400580A (en) * 2012-03-30 2014-01-01 Lg Chemical Ltd Substrate for organic electronic device
CN103608295A (en) * 2011-07-14 2014-02-26 Ltc有限公司 Inorganic particle scattering film having good light-extraction performance
US20140329004A1 (en) * 2013-05-06 2014-11-06 Samsung Corning Precision Materials Co., Ltd. Method Of Fabricating Light Extraction Substrate For OLED

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US20140272623A1 (en) * 2013-03-15 2014-09-18 Sunpower Technologies Llc System for increasing efficiency of semiconductor photocatalysts employing a high surface area substrate
US10033014B2 (en) * 2013-03-15 2018-07-24 Pixelligent Technologies Llc. Advanced light extraction structure
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103608295A (en) * 2011-07-14 2014-02-26 Ltc有限公司 Inorganic particle scattering film having good light-extraction performance
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US20140329004A1 (en) * 2013-05-06 2014-11-06 Samsung Corning Precision Materials Co., Ltd. Method Of Fabricating Light Extraction Substrate For OLED

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