TWI672307B - Organic electric field light-emitting element - Google Patents
Organic electric field light-emitting element Download PDFInfo
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- TWI672307B TWI672307B TW105116360A TW105116360A TWI672307B TW I672307 B TWI672307 B TW I672307B TW 105116360 A TW105116360 A TW 105116360A TW 105116360 A TW105116360 A TW 105116360A TW I672307 B TWI672307 B TW I672307B
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- Taiwan
- Prior art keywords
- light
- host
- organic
- emitting
- layer
- Prior art date
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- 230000005684 electric field Effects 0.000 title claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 59
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- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims abstract description 20
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 11
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- 125000001931 aliphatic group Chemical group 0.000 claims description 6
- 235000010290 biphenyl Nutrition 0.000 claims description 6
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- 238000004455 differential thermal analysis Methods 0.000 description 1
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000007978 oxazole derivatives Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MPQXHAGKBWFSNV-UHFFFAOYSA-N oxidophosphanium Chemical class [PH3]=O MPQXHAGKBWFSNV-UHFFFAOYSA-N 0.000 description 1
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000001791 phenazinyl group Chemical class C1(=CC=CC2=NC3=CC=CC=C3N=C12)* 0.000 description 1
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- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
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- 150000005255 pyrrolopyridines Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- RONWGALEIBILOG-VMJVVOMYSA-N quinine sulfate Chemical compound [H+].[H+].[O-]S([O-])(=O)=O.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21.C([C@H]([C@H](C1)C=C)C2)C[N@@]1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OC)C=C21 RONWGALEIBILOG-VMJVVOMYSA-N 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
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- 230000008022 sublimation Effects 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- QKTRRACPJVYJNU-UHFFFAOYSA-N thiadiazolo[5,4-b]pyridine Chemical class C1=CN=C2SN=NC2=C1 QKTRRACPJVYJNU-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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Abstract
本發明提供一種驅動電壓低、發光效率高、壽命長的有機EL元件。在對向的陽極與陰極之間包含發光層的有機電場發光元件中,發光層含有主體材料與發光性摻雜材料,主體材料是混合有第1主體與第2主體的材料,所述第1主體選自在吲哚并咔唑環的一個氮上鍵結有二苯基三嗪基,於該二苯基三嗪基的苯基上取代有一個以上苯基的化合物;所述第2主體選自在雙咔唑環的兩個氮上鍵結有芳香族烴基,該芳香族烴基的至少一個是縮合芳香族烴基的化合物。The invention provides an organic EL element with low driving voltage, high luminous efficiency, and long life. In an organic electric field light-emitting device including a light-emitting layer between an opposing anode and a cathode, the light-emitting layer includes a host material and a light-emitting dopant material, and the host material is a material in which a first body and a second body are mixed. The host is selected from compounds in which a diphenyltriazinyl group is bonded to one nitrogen of the indolocarbazole ring, and one or more phenyl groups are substituted on the phenyl group of the diphenyltriazinyl group; the second host is selected An aromatic hydrocarbon group is bonded to two nitrogens of the biscarbazole ring, and at least one of the aromatic hydrocarbon groups is a compound having a condensed aromatic hydrocarbon group.
Description
本發明是有關於一種有機電場發光元件(稱為「有機EL元件」)。 The present invention relates to an organic electric field light emitting device (referred to as an "organic EL device").
藉由對有機EL元件施加電壓,分別自陽極將電洞注入至發光層,自陰極將電子注入至發光層。而且,在發光層中,所注入的電洞與電子再結合而生成激子。此時,根據電子自旋的統計法則,以1:3的比例生成單重態激子及三重態激子。使用利用單重態激子的發光的螢光發光型有機EL元件可以說內部量子效率的極限是25%。另一方面,可知使用利用三重態激子的發光的磷光發光型有機EL元件在自單重態激子有效率地進行系間交差(intersystem crossing)的情況下,內部量子效率提高至100%。 By applying a voltage to the organic EL element, holes are injected into the light emitting layer from the anode, and electrons are injected into the light emitting layer from the cathode. Furthermore, in the light emitting layer, the injected holes and electrons recombine to generate excitons. At this time, singlet excitons and triplet excitons are generated at a ratio of 1: 3 according to the statistical rule of electron spin. It can be said that the limit of the internal quantum efficiency is 25% using a fluorescent light-emitting organic EL element that emits light using a singlet exciton. On the other hand, it has been found that when a phosphorescent light-emitting organic EL element using light emitted from a triplet exciton efficiently performs intersystem crossing from a singlet exciton, the internal quantum efficiency is improved to 100%.
然而,關於磷光發光型有機EL元件,長壽命化成為技術性課題。 However, regarding the phosphorescent light-emitting organic EL element, prolonging the life has become a technical issue.
進而,最近正在開發利用延遲螢光的高效率的有機EL元件。例如在專利文獻1中揭示一種有機EL元件,其利用了作為延遲螢光的機制之一的三重態-三重態融合(Triplet-Triplet Fusion,TTF)機構。TTF機構是利用藉由兩個三重態激子的碰撞而生成單重態激子的現象,認為理論上將內部量子效率提高至40%。然而,與磷光發光型有機EL元件相比較而言效率低,因此 要求更有效率的改良。 Furthermore, a highly efficient organic EL element utilizing delayed fluorescence has recently been developed. For example, Patent Document 1 discloses an organic EL device that utilizes a triplet-triplet fusion (TTF) mechanism, which is one of the mechanisms that delay fluorescence. The TTF mechanism is based on the phenomenon that a singlet exciton is generated by the collision of two triplet excitons. It is believed that the internal quantum efficiency is theoretically increased to 40%. However, it is inefficient compared to a phosphorescent organic EL element, and therefore, More efficient improvements are required.
另一方面,於專利文獻2中揭示一種利用熱活化延遲螢光(Thermally Activated Delayed Fluorescence,TADF)機構的有機EL元件。TADF機構是利用如下現象者:在單重態能級與三重態能級的能量差小的材料中,產生自三重態激子向單重態激子的逆系間交差(inverse intersystem crossing);認為理論上將內部量子效率提高至100%。然而,與磷光發光型元件同樣地要求壽命特性的進一步改善。 On the other hand, Patent Document 2 discloses an organic EL element using a Thermally Activated Delayed Fluorescence (TADF) mechanism. The TADF mechanism uses the following phenomenon: in a material with a small energy difference between the singlet energy level and the triplet energy level, an inverse intersystem crossing from a triplet exciton to a singlet exciton; The internal quantum efficiency is increased to 100%. However, similarly to the phosphorescent light-emitting element, further improvement in lifetime characteristics is required.
[現有技術文獻] [Prior Art Literature]
[專利文獻1]WO2010/134350 A1 [Patent Document 1] WO2010 / 134350 A1
[專利文獻2]WO2011/070963 A1 [Patent Document 2] WO2011 / 070963 A1
[專利文獻3]WO2008/056746 A1 [Patent Document 3] WO2008 / 056746 A1
[專利文獻4]日本專利特開2003-133075號公報 [Patent Document 4] Japanese Patent Laid-Open No. 2003-133075
[專利文獻5]WO2013/062075 A1 [Patent Document 5] WO2013 / 062075 A1
[專利文獻6]US2014/0374728 A1 [Patent Document 6] US2014 / 0374728 A1
[專利文獻7]US2014/0197386 A1 [Patent Document 7] US2014 / 0197386 A1
[專利文獻8]US2015/0001488 A1 [Patent Document 8] US2015 / 0001488 A1
[專利文獻9]WO2011/136755 A1 [Patent Document 9] WO2011 / 136755 A1
在專利文獻3中,關於吲哚并咔唑化合物,揭示作為主體材料的用途。在專利文獻4中,關於雙咔唑化合物,揭示作為主體材料的用途。 Patent Document 3 discloses an indolocarbazole compound as a host material. Patent Document 4 discloses use of a biscarbazole compound as a host material.
在專利文獻5、專利文獻6中揭示將雙咔唑化合物作為 混合主體而使用。在專利文獻7、專利文獻8中揭示將吲哚并咔唑化合物與雙咔唑化合物作為混合主體而使用。 Patent Documents 5 and 6 disclose the use of biscarbazole compounds as Use with mixed subjects. Patent Documents 7 and 8 disclose the use of an indolocarbazole compound and a biscarbazole compound as a mixed host.
在專利文獻9中,揭示主體材料的用途,所述主體材料預先混合了包含吲哚并咔唑化合物的多種主體。 Patent Document 9 discloses the use of a host material in which a plurality of hosts including an indolocarbazole compound are mixed in advance.
然而,以上均不能說足夠充分,期望進一步的改良。 However, none of the above is sufficient, and further improvements are expected.
為了將有機EL元件應用於平板顯示器(flat panel display)等顯示元件、或光源中,需要在改善元件的發光效率的同時充分確保驅動時的穩定性。本發明是鑒於所述現狀,其目的在於提供驅動電壓低、效率高,且具有高的驅動穩定性的於實用上有用的有機EL元件。 In order to apply an organic EL element to a display element such as a flat panel display or a light source, it is necessary to sufficiently ensure the stability during driving while improving the light emitting efficiency of the element. The present invention has been made in view of the foregoing circumstances, and an object thereof is to provide a practically useful organic EL element having a low driving voltage, high efficiency, and high driving stability.
本發明是一種有機EL元件,其是於對向的陽極與陰極之間包含一個以上的發光層的有機EL元件,其特徵在於:至少一個發光層含有選自下述通式(1)所表示的化合物的第1主體與選自下述通式(2)所表示的化合物的第2主體、及發光性摻雜材料。 The present invention is an organic EL element, which is an organic EL element including one or more light emitting layers between opposing anodes and cathodes, characterized in that at least one light emitting layer contains a member selected from the group consisting of the following formula (1) The first host of the compound and the second host selected from the compound represented by the following general formula (2), and a light-emitting dopant.
[化1]
(此處,環A是式(1a)所表示的芳香族烴環,環B是式(1b)所表示的雜環,環A及環B分別與所鄰接的環在任意位置縮合。 (Here, ring A is an aromatic hydrocarbon ring represented by formula (1a), ring B is a heterocyclic ring represented by formula (1b), and ring A and ring B are each condensed with an adjacent ring at an arbitrary position.
Ar1是苯基、聯苯基、或聯三苯基。 Ar 1 is phenyl, biphenyl, or bitriphenyl.
R獨立地為碳數1~10的脂肪族烴基、碳數6~10的芳香族烴基或碳數3~12的芳香族雜環基。 R is independently an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, or an aromatic heterocyclic group having 3 to 12 carbon atoms.
a、b、c表示取代數,各自獨立地表示0~3的整數。 a, b, and c represent substitution numbers, and each independently represents an integer of 0 to 3.
m與n表示取代數,各自獨立地表示0~2的整數,m+n表示1以上的整數) m and n represent the number of substitutions, each independently represents an integer of 0 to 2, and m + n represents an integer of 1 or more)
[化2]
(此處,Ar2與Ar3表示碳數6~14的芳香族烴基、或2個~3個該芳香族烴基連結而成的基,Ar2與Ar3的至少一者表示縮合芳香族烴基) (Here, Ar 2 and Ar 3 represent an aromatic hydrocarbon group having 6 to 14 carbon atoms, or two to three aromatic hydrocarbon groups connected to each other, and at least one of Ar 2 and Ar 3 represents a condensed aromatic hydrocarbon group. )
作為通式(2)的較佳的實施方式,存在有通式(3)。 As a preferred embodiment of the general formula (2), there is a general formula (3).
通式(3)的Ar2和Ar3與通式(2)的Ar2和Ar3同義。而且,更佳的是Ar2為萘基或菲基的任意者。 Ar general formula (3) Ar 2 and Ar 3 in the general formula (2) is 2 and Ar 3 are synonymous. Furthermore, it is more preferable that Ar 2 is any of a naphthyl group and a phenanthryl group.
所述第1主體與第2主體較佳的是於蒸鍍前預混合而使 用。而且,較佳的是所述第1主體與第2主體的50%重量減少溫度之差為20℃以內,或相對於第1主體與第2主體的合計而言,第1主體的比例比20wt%(重量百分比)多,比55wt%少。 It is preferable that the first body and the second body are pre-mixed before evaporation so that use. In addition, it is preferable that a difference between the 50% weight reduction temperature of the first body and the second body is within 20 ° C, or the ratio of the first body to the total weight of the first body and the second body is 20wt. % (Weight percentage) is more than 55 wt%.
所述發光性摻雜材料可為磷光發光摻雜材料、螢光發光摻雜材料或熱活化延遲螢光發光摻雜材料。作為磷光發光摻雜材料,可列舉包含選自釕、銠、鈀、銀、錸、鋨、銥、鉑及金的至少一種金屬的有機金屬錯合物。 The luminescent doping material may be a phosphorescent luminescent doping material, a fluorescent luminescent doping material, or a thermally activated delayed fluorescent luminescent doping material. Examples of the phosphorescent light-emitting doping material include an organometallic complex containing at least one metal selected from the group consisting of ruthenium, rhodium, palladium, silver, osmium, osmium, iridium, platinum, and gold.
而且,所述有機EL元件較佳的是設置與發光層鄰接的電洞阻擋層,於該電洞阻擋層中含有通式(1)所表示的化合物。 The organic EL element is preferably provided with a hole blocking layer adjacent to the light emitting layer, and the hole blocking layer contains a compound represented by the general formula (1).
本發明的有機EL元件在發光層中含有多種特定的主體材料,因此可成為驅動電壓低、發光效率高、且壽命長的有機EL元件。 Since the organic EL element of the present invention contains a plurality of specific host materials in the light-emitting layer, it can be an organic EL element having a low driving voltage, high luminous efficiency, and long life.
1‧‧‧基板 1‧‧‧ substrate
2‧‧‧陽極 2‧‧‧ anode
3‧‧‧電洞注入層 3‧‧‧ Hole injection layer
4‧‧‧電洞傳輸層 4‧‧‧ Hole Transmission Layer
5‧‧‧發光層 5‧‧‧ luminescent layer
6‧‧‧電子傳輸層 6‧‧‧ electron transmission layer
7‧‧‧陰極 7‧‧‧ cathode
圖1是表示有機EL元件的一例的示意剖面圖。 FIG. 1 is a schematic cross-sectional view showing an example of an organic EL element.
本發明的有機EL元件在對向的陽極與陰極之間具有一個以上的發光層,發光層的至少一層含有第1主體與第2主體、及發光性摻雜材料。第1主體是所述通式(1)所表示的化合物,第2主體是所述通式(2)所表示的化合物。該有機EL元件在對向的陽極與陰極之間含有包含多個層的有機層,多個層的至少一層是發光層,發光層也可存在多個。而且,所述發光層亦可包含 藉由真空蒸鍍而製作的蒸鍍層。 The organic EL element of the present invention has one or more light-emitting layers between the opposing anode and cathode, and at least one layer of the light-emitting layer includes a first host and a second host, and a light-emitting dopant. The first host is a compound represented by the general formula (1), and the second host is a compound represented by the general formula (2). This organic EL element includes an organic layer including a plurality of layers between opposing anodes and cathodes. At least one of the plurality of layers is a light emitting layer, and a plurality of light emitting layers may be present. Moreover, the light emitting layer may also include A vapor-deposited layer produced by vacuum vapor deposition.
關於所述通式(1)而加以說明。 The general formula (1) will be described.
環A是式(1a)所表示的芳香族烴環,環B是式(1b)所表示的雜環,環A及環B分別與所鄰接的環在任意位置縮合。 Ring A is an aromatic hydrocarbon ring represented by formula (1a), ring B is a heterocyclic ring represented by formula (1b), and ring A and ring B are condensed with adjacent rings at arbitrary positions.
Ar1表示苯基、聯苯基、或聯三苯基。較佳的是苯基、聯苯基,更佳的是苯基。此處,聯苯基是-Ph-Ph所表示的基,聯三苯基是-Ph-Ph-Ph或-Ph(-Ph)-Ph所表示的基。Ph是苯基或伸苯基等。 Ar 1 represents phenyl, biphenyl, or bitriphenyl. Phenyl and biphenyl are preferred, and phenyl is more preferred. Here, biphenyl is a group represented by -Ph-Ph, and bitriphenyl is a group represented by -Ph-Ph-Ph or -Ph (-Ph) -Ph. Ph is phenyl or phenyl.
R獨立地表示碳數1~10的脂肪族烴基、碳數6~10的芳香族烴基或碳數3~12的芳香族雜環基。較佳的是表示碳數1~8的脂肪族烴基、苯基、或碳數3~9的芳香族雜環基。更佳的是碳數1~6的脂肪族烴基、苯基、或碳數3~6的芳香族雜環基。 R independently represents an aliphatic hydrocarbon group having 1 to 10 carbon atoms, an aromatic hydrocarbon group having 6 to 10 carbon atoms, or an aromatic heterocyclic group having 3 to 12 carbon atoms. Preferred is an aliphatic hydrocarbon group having 1 to 8 carbon atoms, a phenyl group, or an aromatic heterocyclic group having 3 to 9 carbon atoms. More preferred are aliphatic hydrocarbon groups having 1 to 6 carbon atoms, phenyl groups, or aromatic heterocyclic groups having 3 to 6 carbon atoms.
作為所述碳數1~10的脂肪族烴基的具體例,可列舉甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基等。 Specific examples of the aliphatic hydrocarbon group having 1 to 10 carbon atoms include methyl, ethyl, propyl, butyl, pentyl, hexyl, heptyl, octyl, nonyl, and decyl.
作為所述碳數6~10的芳香族烴基、或碳數3~12的芳香族雜環基的具體例,可列舉自苯、萘、吡啶、嘧啶、三嗪、噻吩、異噻唑、噻唑、噠嗪、吡咯、吡唑、咪唑、三唑、噻二唑、吡嗪、呋喃、異噁唑、噁唑、噁二唑、喹啉、異喹啉、喹噁啉、喹唑啉、噁二唑、噻二唑、苯并三嗪、酞嗪、四唑、吲哚、苯并呋喃、苯并噻吩、苯并噁唑、苯并噻唑、吲唑、苯并咪唑、苯并三唑、苯并異噻唑、苯并噻二唑、二苯并呋喃、二苯并噻吩、二 苯并硒吩、或咔唑去掉一個H而生成的芳香族基。較佳的是可列舉自苯、吡啶、嘧啶、三嗪、噻吩、異噻唑、噻唑、噠嗪、吡咯、吡唑、咪唑、三唑、噻二唑、吡嗪、呋喃、異噁唑、噁唑、噁二唑、喹啉、異喹啉、喹噁啉、喹唑啉、噁二唑、噻二唑、苯并三嗪、酞嗪、四唑、吲哚、苯并呋喃、苯并噻吩、苯并噁唑、苯并噻唑、吲唑、苯并咪唑、苯并三唑、苯并異噻唑、或苯并噻二唑生成的芳香族基。更佳的是可列舉自苯、吡啶、嘧啶、三嗪、噻吩、異噻唑、噻唑、噠嗪、吡咯、吡唑、咪唑、三唑、噻二唑、吡嗪、呋喃、異噁唑、噁唑、或噁二唑生成的芳香族基。 Specific examples of the aromatic hydrocarbon group having 6 to 10 carbon atoms or the aromatic heterocyclic group having 3 to 12 carbon atoms include benzene, naphthalene, pyridine, pyrimidine, triazine, thiophene, isothiazole, thiazole, Pyridazine, pyrrole, pyrazole, imidazole, triazole, thiadiazole, pyrazine, furan, isoxazole, oxazole, oxadiazole, quinoline, isoquinoline, quinoxaline, quinazoline, oxadiazole Azole, thiadiazole, benzotriazine, phthalazine, tetrazole, indole, benzofuran, benzothiophene, benzoxazole, benzothiazole, indazole, benzimidazole, benzotriazole, benzene Benzoisothiazole, benzothiadiazole, dibenzofuran, dibenzothiophene, di An aromatic group formed by removing one H from benzoselenophene or carbazole. Preferred examples include benzene, pyridine, pyrimidine, triazine, thiophene, isothiazole, thiazole, pyridazine, pyrrole, pyrazole, imidazole, triazole, thiadiazole, pyrazine, furan, isoxazole, oxazole Azole, oxadiazole, quinoline, isoquinoline, quinoxaline, quinazoline, oxadiazole, thiadiazole, benzotriazine, phthalazine, tetrazole, indole, benzofuran, benzothiophene , Benzoxazole, benzothiazole, indazole, benzimidazole, benzotriazole, benzoisothiazole, or benzothiadiazole. More preferred examples include benzene, pyridine, pyrimidine, triazine, thiophene, isothiazole, thiazole, pyridazine, pyrrole, pyrazole, imidazole, triazole, thiadiazole, pyrazine, furan, isoxazole, oxazole Azole or oxadiazole.
a、b、c表示取代數,各自獨立地表示0~3的整數,較佳為0或1的整數。m與n表示取代數,各自獨立地表示0~2的整數,較佳為0或1的整數。m+n是1以上的整數,較佳為1、2、或3的整數。 a, b, and c each represent a substitution number, and each independently represents an integer of 0 to 3, preferably an integer of 0 or 1. m and n each represent a substitution number, and each independently represents an integer of 0 to 2, preferably an integer of 0 or 1. m + n is an integer of 1 or more, and is preferably an integer of 1, 2, or 3.
以下表示通式(1)所表示的化合物的具體例,但並不限定於該等例示化合物。 Specific examples of the compound represented by the general formula (1) are shown below, but are not limited to these exemplary compounds.
[化4]
[化5]
[化6]
[化7]
[化8]
[化9]
[化10]
[化11]
[化12]
其次,關於成為第2主體的通式(2)或通式(3)的化合物而加以說明。在通式(2)與通式(3)中,共用的記號具有相同的含義。 Next, the compound of the general formula (2) or the general formula (3) which becomes a 2nd main body is demonstrated. In the general formula (2) and the general formula (3), common symbols have the same meaning.
Ar2與Ar3表示碳數6~14的芳香族烴基、或2個~3個該芳香族烴基連結而成的基。較佳的是表示碳數6~12的芳香族烴基,更佳的是表示碳數6~10的芳香族烴基,但Ar2與Ar3的至少一者是縮合芳香族烴基。 Ar 2 and Ar 3 represent an aromatic hydrocarbon group having 6 to 14 carbon atoms, or a group in which two to three aromatic hydrocarbon groups are linked. An aromatic hydrocarbon group having 6 to 12 carbon atoms is preferred, and an aromatic hydrocarbon group having 6 to 10 carbon atoms is more preferred. At least one of Ar 2 and Ar 3 is a condensed aromatic hydrocarbon group.
Ar2與Ar3的具體例可列舉自苯、萘、蒽、菲、茀、或2個~3個該等化合物連結而成的化合物去掉一個H而生成的連結芳香族基。較佳的是可列舉自苯、萘、蒽、或菲生成的芳香族基,更佳的是自苯、萘、或菲生成的芳香族基。進而佳的是Ar2為萘基或菲基。此處,連結芳香族基是如-Ar5-Ar7、-Ar5-Ar6-Ar7、或-Ar5(-Ar6)-Ar7這樣的式所表示的基,Ar5、Ar6、Ar7獨立地為碳數6~14的芳香族烴基。Ar5是2價或3價的基,Ar6是1價或2價的基,Ar7是1價的基。 Specific examples of Ar 2 and Ar 3 include a bonded aromatic group formed by removing one H from a compound in which benzene, naphthalene, anthracene, phenanthrene, fluorene, or two or three of these compounds are linked. Preferred examples include aromatic groups derived from benzene, naphthalene, anthracene, or phenanthrene, and more preferred are aromatic groups derived from benzene, naphthalene, or phenanthrene. Further preferably, Ar 2 is naphthyl or phenanthryl. Here, the linked aromatic group is a group represented by a formula such as -Ar 5 -Ar 7 , -Ar 5 -Ar 6 -Ar 7 , or -Ar 5 (-Ar 6 ) -Ar 7 , Ar 5 , Ar 6. Ar 7 is independently an aromatic hydrocarbon group having 6 to 14 carbon atoms. Ar 5 is a divalent or trivalent radical, Ar 6 is a monovalent or divalent radical, and Ar 7 is a monovalent radical.
以下表示通式(2)~通式(3)所表示的化合物的具體 例,但並不限定於該等例示化合物。 Specific examples of the compounds represented by the general formulae (2) to (3) are shown below. Examples are not limited to these exemplary compounds.
[化14]
[化15]
[化16]
[化17]
[化18]
[化19]
藉由將選自所述通式(1)所表示的化合物的第1主體與選自所述通式(2)所表示的化合物的第2主體用作發光層的主體材料,可提供優異的有機EL元件。該發光層的形成方法並無限制,有利的是藉由蒸鍍而形成。 By using the first host selected from the compound represented by the general formula (1) and the second host selected from the compound represented by the general formula (2) as the host material of the light emitting layer, excellent Organic EL element. The method for forming the light-emitting layer is not limited, and is preferably formed by vapor deposition.
在藉由蒸鍍而形成的情況下,第1主體與第2主體亦可自分別不同的蒸鍍源進行蒸鍍而使用,但較佳的是在蒸鍍前進行預混合而製成預混合物,將該預混合物自一個蒸鍍源同時蒸鍍而形成發光層。在這種情況下,亦可於預混合物中混合用以形成發光層所需的發光性摻雜材料或視需要使用的其他主體,但在成為所期望的蒸氣壓的溫度存在大的差的情況下,亦可自其他蒸鍍源進行蒸鍍。 When formed by vapor deposition, the first body and the second body may be vapor-deposited and used from different vapor deposition sources, but it is preferable to perform pre-mixing to make a pre-mixture before vapor deposition. The light-emitting layer is formed by simultaneous vapor deposition of the premix from a vapor deposition source. In this case, it is also possible to mix the light-emitting dopant material required for forming the light-emitting layer or other hosts used as needed in the premix, but there may be a large difference in the temperature at which the vapor pressure is expected. Next, vapor deposition may be performed from other vapor deposition sources.
而且,關於第1主體與第2主體的混合比(重量比),相對於第1主體與第2主體的合計而言,第1主體的比例可為20%~60%,較佳為比20%多、比55%少,更佳為40%~50%。 In addition, regarding the mixing ratio (weight ratio) of the first body and the second body, the ratio of the first body to the total of the first body and the second body may be 20% to 60%, and preferably 20 to 60%. %, Less than 55%, more preferably 40% to 50%.
而且,較佳的是第1主體與第2主體的電子親和力(Electron Affinity,EA)差大於0.1eV、小於0.6eV。EA的值可 使用主體材料薄膜的如下值而算出:藉由光電子分光法而獲得的游離電位(Ionization Potential,IP)的值;測定吸收光譜,根據其吸收端而求出的能隙(energy gap)的值。 Furthermore, it is preferable that the difference between the electron affinity (EA) of the first host and the second host is greater than 0.1 eV and less than 0.6 eV. The value of EA is The host material film was calculated using the following values: the value of the Ionization Potential (IP) obtained by photoelectron spectroscopy; and the value of the energy gap obtained by measuring the absorption spectrum and the absorption end.
其次,關於本發明的有機EL元件的結構,參照圖式而加以說明,但本發明的有機EL元件的結構並不限定於此。 Next, the structure of the organic EL element of the present invention will be described with reference to the drawings, but the structure of the organic EL element of the present invention is not limited to this.
圖1是表示本發明中所使用的一般的有機EL元件的結構例的剖面圖,1表示基板、2表示陽極、3表示電洞注入層、4表示電洞傳輸層、5表示發光層、6表示電子傳輸層、7表示陰極。本發明的有機EL元件亦可與發光層鄰接而具有激子阻擋層,而且在發光層與電洞注入層之間亦可具有電子阻擋層。激子阻擋層亦可插入至發光層的陽極側、陰極側的任一側,亦可同時插入至兩側。在本發明的有機EL元件中,具有陽極、發光層、以及陰極而作為必需的層,但除了必需層以外亦可具有電洞注入傳輸層、電子注入傳輸層,亦可進一步在發光層與電子注入傳輸層之間具有電洞阻擋層。另外,電洞注入傳輸層表示電洞注入層與電洞傳輸層的任一者或兩者,電子注入傳輸層表示電子注入層與電子傳輸層的任一者或兩者。 1 is a cross-sectional view showing a configuration example of a general organic EL element used in the present invention, where 1 is a substrate, 2 is an anode, 3 is a hole injection layer, 4 is a hole transport layer, 5 is a light emitting layer, 6 Indicates an electron transport layer, and 7 indicates a cathode. The organic EL element of the present invention may have an exciton blocking layer adjacent to the light emitting layer, and may also have an electron blocking layer between the light emitting layer and the hole injection layer. The exciton blocking layer can also be inserted on either the anode side or the cathode side of the light emitting layer, or it can be inserted on both sides at the same time. The organic EL element of the present invention includes an anode, a light-emitting layer, and a cathode as necessary layers, but may include a hole injection transport layer and an electron injection transport layer in addition to the necessary layers, and may further include a light-emitting layer and an electron. A hole blocking layer is provided between the injection transport layers. The hole injection transport layer refers to either or both of the hole injection layer and the hole transport layer, and the electron injection transport layer refers to either or both of the electron injection layer and the electron transport layer.
亦可為與圖1相反的結構,亦即在基板1上順次積層陰極7、電子傳輸層6、發光層5、電洞傳輸層4、陽極2,在這種情況下亦可視需要對層進行追加、省略。 It can also have the structure opposite to FIG. 1, that is, the cathode 7, the electron transport layer 6, the light emitting layer 5, the hole transport layer 4, and the anode 2 are sequentially laminated on the substrate 1. Add, omit.
-基板- -Substrate-
本發明的有機EL元件較佳的是支撐於基板上。關於該基板 並無特別限制,只要為自先前便於有機EL元件中所使用者即可,例如可使用包含玻璃、透明塑膠、石英等的基板。 The organic EL element of the present invention is preferably supported on a substrate. About the substrate There is no particular limitation, as long as it is convenient for users of organic EL elements, for example, a substrate including glass, transparent plastic, quartz, or the like can be used.
-陽極- -anode-
作為有機EL元件中的陽極材料,可較佳地使用包含功函數(work function)大(4eV以上)的金屬、合金、導電性化合物或該些的混合物的材料。作為此種電極材料的具體例,可列舉Au等金屬,CuI、氧化銦錫(Indium Tin Oxide,ITO)、SnO2、ZnO等導電性透明材料。而且,亦可使用IDIXO(In2O3-ZnO)等非晶質,且可製成透明導電膜的材料。陽極可藉由蒸鍍或濺鍍等方法,使該等電極材料形成薄膜,藉由光微影法形成所期望的形狀的圖案,或者在並不很需要圖案精度的情況下(100μm以上左右),亦可在所述電極材料的蒸鍍或濺鍍時,經由所期望的形狀的遮罩而形成圖案。或者在使用如有機導電性化合物這樣的可塗佈的物質的情況下,亦可使用印刷方式、塗佈方式等濕式成膜法。在自該陽極取出發光的情況下,理想的是使透過率大於10%,而且作為陽極的片電阻較佳為數百Ω/□以下。膜厚亦根據材料而定,通常於10nm~1000nm、較佳為10nm~200nm的範圍內選擇。 As the anode material in the organic EL element, a material including a metal, an alloy, a conductive compound, or a mixture of these with a large work function (4 eV or more) can be preferably used. Specific examples of such an electrode material include metals such as Au, and conductive transparent materials such as CuI, Indium Tin Oxide (ITO), SnO 2 , and ZnO. In addition, an amorphous material such as IDIXO (In 2 O 3 -ZnO) can also be used, and a material that can be made into a transparent conductive film. The anode can be formed into a thin film by such methods as vapor deposition or sputtering, and a desired shape pattern can be formed by a photolithography method, or when pattern accuracy is not required (about 100 μm or more). During the vapor deposition or sputtering of the electrode material, a pattern may be formed through a mask having a desired shape. Alternatively, when a coatable substance such as an organic conductive compound is used, a wet film formation method such as a printing method or a coating method may be used. In the case where light is taken out from the anode, it is desirable that the transmittance is greater than 10%, and the sheet resistance as the anode is preferably several hundred Ω / □ or less. The film thickness also depends on the material, and is usually selected in the range of 10 nm to 1000 nm, preferably 10 nm to 200 nm.
-陰極- -cathode-
另一方面,作為陰極材料,可使用包含功函數小(4eV以下)的金屬(亦稱為「電子注入性金屬」)、合金、導電性化合物或該等混合物的材料。此種電極材料的具體例可列舉鈉、鈉-鉀合金、鎂、鋰、鎂/銅混合物、鎂/銀混合物、鎂/鋁混合物、鎂/銦混合物、 鋁/氧化鋁(Al2O3)混合物、銦、鋰/鋁混合物、稀土金屬等。自電子注入性及對氧化等的耐久性的方面考慮,該些中適宜的是電子注入性金屬與作為功函數的值比其大且穩定之金屬的第二金屬的混合物,例如鎂/銀混合物、鎂/鋁混合物、鎂/銦混合物、鋁/氧化鋁(Al2O3)混合物、鋰/鋁混合物、鋁等。陰極可藉由如下方式而製作:藉由蒸鍍或濺鍍等方法而使該等陰極材料形成薄膜。而且,作為陰極,片電阻較佳為數百Ω/□以下,膜厚通常於10nm~5μm、較佳為50nm~200nm的範圍內選擇。另外,為了使所發出的光透過,若有機EL元件的陽極或陰極的任一者為透明或半透明,則發光亮度提高,從而有利。 On the other hand, as the cathode material, a material including a metal (also referred to as an “electron injection metal”), an alloy, a conductive compound, or a mixture thereof having a small work function (4 eV or less) can be used. Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, and aluminum / alumina (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals, etc. From the viewpoint of electron injection property and durability to oxidation, among these, a mixture of an electron injection metal and a second metal having a larger and more stable work function than the second metal, such as a magnesium / silver mixture, is suitable. , Magnesium / aluminum mixture, magnesium / indium mixture, aluminum / alumina (Al 2 O 3 ) mixture, lithium / aluminum mixture, aluminum, and the like. The cathode can be produced by forming the cathode material into a thin film by a method such as evaporation or sputtering. Moreover, as the cathode, the sheet resistance is preferably several hundreds Ω / □ or less, and the film thickness is usually selected in the range of 10 nm to 5 μm, and preferably 50 nm to 200 nm. In addition, in order to transmit the emitted light, if either the anode or the cathode of the organic EL element is transparent or translucent, the luminous brightness is improved, which is advantageous.
而且,在陰極中以1nm~20nm的膜厚形成所述金屬後,於其上形成在陽極的說明中所列舉的導電性透明材料,藉此可製作透明或半透明的陰極,藉由應用此方法,可製作陽極與陰極此兩者具有透過性的元件。 In addition, after forming the metal in a thickness of 1 nm to 20 nm in the cathode, the conductive transparent materials listed in the description of the anode are formed thereon, whereby a transparent or translucent cathode can be produced, and by applying this This method can produce a transparent element having both an anode and a cathode.
-發光層- -Light emitting layer-
發光層是在藉由自陽極及陰極的各個所注入的電洞及電子進行再結合而生成激子後發光的層,在發光層中包含有機發光性摻雜材料與主體材料。 The light-emitting layer is a layer that emits light after excitons are generated by recombination of holes and electrons injected from each of the anode and the cathode. The light-emitting layer includes an organic light-emitting dopant and a host material.
作為發光層中的主體材料,使用通式(1)所表示的第1主體與通式(2)所表示的第2主體。進而,可使用一種公知的主體材料或者亦可併用多種,其使用量可以是相對於主體材料的合計而言為50wt%以下、較佳為35wt%以下。 As the host material in the light-emitting layer, a first host represented by the general formula (1) and a second host represented by the general formula (2) were used. Further, one known host material may be used or a plurality of types may be used in combination, and the amount of use may be 50% by weight or less, and preferably 35% by weight or less, based on the total of the host materials.
第1主體與第2主體可自分別不同的蒸鍍源進行蒸鍍,或者亦可於蒸鍍前進行預混合而製成預混合物,藉此自一個蒸鍍源同時蒸鍍第1主體與第2主體。 The first body and the second body can be vapor-deposited from different evaporation sources, or they can be pre-mixed to form a pre-mixture before evaporation, thereby simultaneously vaporizing the first body and the first body from one evaporation source. 2 the main body.
在將第1主體與第2主體預混合而使用的情況下,為了再現性良好地製作具有良好特性的有機EL元件,理想的是50%重量減少溫度(T50)之差小。50%重量減少溫度是指在氮氣流減壓(50Pa)下的熱重/示差熱分析(Thermogravimetric-Differential Thermal Analysis,TG-DTA)測定中,以每分鐘10℃的速度自室溫升溫至550℃時,重量減少50%時的溫度。認為在該溫度附近,最強烈地產生蒸發或昇華的氣化。 When the first body and the second body are pre-mixed and used, in order to produce an organic EL element having good characteristics with good reproducibility, it is desirable that the difference between the 50% weight reduction temperature (T 50 ) is small. The 50% weight reduction temperature refers to a temperature increase from room temperature to 550 ° C at a rate of 10 ° C per minute in a thermogravimetric-differential thermal analysis (TG-DTA) measurement under a reduced pressure (50Pa) of a nitrogen stream. The temperature at which the weight is reduced by 50%. It is considered that vaporization or sublimation gasification occurs most strongly around this temperature.
第1主體與第2主體較佳的是所述50%重量減少溫度之差為20℃以內,更佳為15℃以內。作為預混合方法,可採用粉碎混合等公知的方法,理想的是儘可能地均勻混合。 It is preferable that the difference between the 50% weight reduction temperature of the first body and the second body is within 20 ° C, and more preferably within 15 ° C. As the pre-mixing method, a known method such as pulverization and mixing can be used, and it is desirable to mix as uniformly as possible.
在使用磷光發光摻雜劑作為發光性摻雜材料的情況下,磷光發光摻雜劑可為含有有機金屬錯合物者,所述有機金屬錯合物包含選自釕、銠、鈀、銀、錸、鋨、銥、鉑及金的至少一種金屬。具體而言,可適宜地使用在「美國化學會志(J.Am.Chem.Soc.)」2001,123,4304或日本專利特表2013-53051號公報中所記載的銥錯合物,但並不限定於該些。 When a phosphorescent dopant is used as the luminescent dopant, the phosphorescent dopant may be an organic metal complex containing an organic metal complex selected from the group consisting of ruthenium, rhodium, palladium, silver, At least one metal of rhenium, osmium, iridium, platinum, and gold. Specifically, the iridium complex described in "J. Am. Chem. Soc." 2001, 123, 4304 or Japanese Patent Publication No. 2013-53051 can be suitably used, but It is not limited to these.
磷光發光摻雜材料可於發光層中僅僅含有一種,亦可含有兩種以上。磷光發光摻雜材料的含量較佳的是相對於主體材料而言為0.1wt%~30wt%,更佳為1wt%~20wt%。 The phosphorescent light-emitting doping material may contain only one kind in the light-emitting layer, or may contain two or more kinds. The content of the phosphorescent light-emitting doping material is preferably 0.1 wt% to 30 wt%, and more preferably 1 wt% to 20 wt% relative to the host material.
磷光發光摻雜材料並無特別限定,具體而言可列舉如下之例。 The phosphorescent light-emitting doping material is not particularly limited, and examples thereof include the following.
[化21]
在使用螢光發光摻雜劑作為發光性摻雜材料的情況下,螢光發光摻雜劑並無特別限定,例如可列舉苯并噁唑衍生物、苯并噻唑衍生物、苯并咪唑衍生物、苯乙烯基苯衍生物、聚苯基衍生物、二苯基丁二烯衍生物、四苯基丁二烯衍生物、萘二甲醯亞胺衍生物、香豆素衍生物、縮合芳香族化合物、紫環酮衍生物、噁二唑衍生物、噁嗪衍生物、醛連氮衍生物、吡咯啶衍生物、環戊二烯衍生物、雙苯乙烯基蒽衍生物、喹吖啶酮衍生物、吡咯并吡啶衍生物、噻二唑并吡啶衍生物、苯乙烯基胺衍生物、二酮基吡咯并吡咯衍生物、芳香族二次甲基化合物(aromatic dimethylidine compound)、8-羥基喹啉衍生物的金屬錯合物或吡咯亞甲基衍生物的金屬錯合物、稀土錯合物、過渡金屬錯合物為代表的各種金屬錯合物等,聚噻吩、聚苯、聚苯乙炔等聚合物化合物,有機矽烷衍生物等。較佳的是可列舉縮合芳香族衍生物、苯乙烯基衍生物、二酮基吡咯并吡咯衍生 物、噁嗪衍生物、吡咯亞甲基金屬錯合物、過渡金屬錯合物、或鑭系錯合物,更佳的是可列舉萘、芘、、聯伸三苯、苯并[c]菲、苯并[a]蒽、稠五苯、苝、螢蒽、苊并螢蒽、二苯并[a,j]蒽、二苯并[a,h]蒽、苯并[a]萘、稠六苯、萘并[2,1-f]異喹啉、α-萘并啡啶、菲并噁唑、喹啉并[6,5-f]喹啉、苯并萘并噻吩等。該些亦可具有烷基、芳基、芳香族雜環基、或二芳基胺基而作為取代基。 When a fluorescent light emitting dopant is used as the light emitting dopant, the fluorescent light emitting dopant is not particularly limited, and examples thereof include a benzoxazole derivative, a benzothiazole derivative, and a benzimidazole derivative. , Styrylbenzene derivative, polyphenyl derivative, diphenylbutadiene derivative, tetraphenylbutadiene derivative, naphthalenedimethylimine derivative, coumarin derivative, condensation aromatic Compounds, purple ring ketone derivatives, oxadiazole derivatives, oxazine derivatives, aldehyde azine derivatives, pyrrolidine derivatives, cyclopentadiene derivatives, bisstyryl anthracene derivatives, quinacridone derivatives Compounds, pyrrolopyridine derivatives, thiadiazolopyridine derivatives, styrylamine derivatives, diketopyrrolopyrrole derivatives, aromatic dimethylidine compounds, 8-hydroxyquinolines Metal complexes of derivatives or metal complexes of pyrromethene derivatives, rare earth complexes, transition metal complexes and other metal complexes, such as polythiophene, polybenzene, polyphenylacetylene, etc. Polymer compounds, organic silane derivatives . Preferred examples include condensed aromatic derivatives, styryl derivatives, diketopyrrolopyrrole derivatives, oxazine derivatives, pyrromethene metal complexes, transition metal complexes, or lanthanides. Complexes, more preferably naphthalene, fluorene, , Biphenyl tribenzo, benzo [c] phenanthrene, benzo [a] anthracene, pentacene, pyrene, fluoranthene, fluoranthene, dibenzo [a, j] anthracene, dibenzo [a, h ] Anthracene, benzo [a] naphthalene, fused hexabenzene, naphtho [2,1-f] isoquinoline, α-naphthoridine, phenoxazole, quinolino [6,5-f] quine Phthaloline, benzonaphthothiophene, etc. These may have an alkyl group, an aryl group, an aromatic heterocyclic group, or a diarylamino group as a substituent.
螢光發光摻雜材料可於發光層中僅僅含有一種,亦可含有兩種以上。螢光發光摻雜材料的含量較佳的是相對於主體材料而言為0.1%~20%,更佳為1%~10%。 The fluorescent light-emitting doping material may contain only one kind in the light-emitting layer, or may contain two or more kinds. The content of the fluorescent light-emitting doping material is preferably 0.1% to 20%, and more preferably 1% to 10%, relative to the host material.
在使用熱活化延遲螢光發光摻雜劑作為發光性摻雜材料的情況下,熱活化延遲螢光發光摻雜劑並無特別限定,可列舉錫錯合物或銅錯合物等金屬錯合物,或在WO2011/070963號公報中所記載的吲哚并咔唑衍生物、在自然(Nature)2012,492,234中所記載的氰基苯衍生物、咔唑衍生物、在自然光子學(Nature Photonics)2014,8,326中所記載的吩嗪衍生物、噁二唑衍生物、三唑衍生物、碸衍生物、啡噁嗪衍生物、吖啶衍生物等。 When a thermally activated delayed fluorescent light-emitting dopant is used as the light-emitting dopant, the thermally activated delayed fluorescent light-emitting dopant is not particularly limited, and examples include metal complexes such as tin complexes and copper complexes. Or indolocarbazole derivatives described in WO2011 / 070963, cyanobenzene derivatives, carbazole derivatives described in Nature 2012, 492,234, natural photonics (Nature Photonics) The phenazine derivatives, oxadiazole derivatives, triazole derivatives, fluorene derivatives, phenoxazine derivatives, acridine derivatives and the like described in 2014, 8, 326.
熱活化延遲螢光發光摻雜材料並無特別限定,具體而言可列舉如下之例。 The thermally activated delayed fluorescent light-emitting doping material is not particularly limited, and examples thereof include the following.
[化22]
熱活化延遲螢光發光摻雜材料可於發光層中僅僅含有一種,亦可含有兩種以上。而且,熱活化延遲螢光發光摻雜劑亦可與磷光發光摻雜劑或螢光發光摻雜劑混合而使用。熱活化延遲螢光發光摻雜材料的含量較佳的是相對於主體材料而言為0.1%~50%,更佳為1%~30%。 The thermally activated delayed fluorescent light-emitting doping material may contain only one kind in the light-emitting layer, or may contain more than two kinds. Furthermore, the thermally activated delayed fluorescent light emitting dopant may be used in combination with a phosphorescent light emitting dopant or a fluorescent light emitting dopant. The content of the thermally activated delayed fluorescent light-emitting doping material is preferably 0.1% to 50%, and more preferably 1% to 30% relative to the host material.
-注入層- -Injection layer-
所謂「注入層」是為了使驅動電壓降低或使發光亮度提高而設在電極與有機層之間的層,存在有電洞注入層與電子注入層,亦可存在於陽極與發光層或電洞傳輸層之間、及陰極與發光層或電子傳輸層之間。注入層可視需要而設置。 The so-called "injection layer" is a layer provided between the electrode and the organic layer in order to reduce the driving voltage or increase the light emission brightness. There are a hole injection layer and an electron injection layer, and it can also exist in the anode and the light emitting layer or hole Between the transport layers, and between the cathode and the light-emitting layer or the electron transport layer. The injection layer can be set as required.
-電洞阻擋層- -Electric hole barrier layer-
所謂「電洞阻擋層」廣義而言,具有電子傳輸層的功能,包含具有傳輸電子的功能且傳輸電洞的能力明顯小的電洞阻擋材料,可藉由傳輸電子且阻擋電洞而提高發光層中的電子與電洞的再結合概率。 The so-called "hole blocking layer", in a broad sense, has the function of an electron transport layer, and includes a hole blocking material that has a function of transmitting electrons and has a significantly lower ability to transmit holes. It can improve light emission by transmitting electrons and blocking holes. Recombination probability of electrons and holes in the layer.
於電洞阻擋層中,較佳的是含有通式(1)所表示的化合物,亦可使用公知的電洞阻擋層材料。 The hole blocking layer preferably contains a compound represented by the general formula (1), and a known hole blocking layer material may be used.
-電子阻擋層- -Electronic blocking layer-
所謂「電子阻擋層」廣義而言,具有電洞傳輸層的功能,可藉由傳輸電洞且阻擋電子而提高發光層中的電子與電洞再結合的概率。 The so-called "electron blocking layer", in a broad sense, has the function of a hole transport layer, which can increase the probability of recombination of electrons and holes in the light-emitting layer by transmitting holes and blocking electrons.
作為電子阻擋層的材料,可使用公知的電子阻擋層材料,而且可視需要而使用後述的電洞傳輸層的材料。電子阻擋層的膜厚較佳為3nm~100nm,更佳為5nm~30nm。 As a material of the electron blocking layer, a known electron blocking layer material can be used, and a material of a hole transporting layer described later can be used if necessary. The film thickness of the electron blocking layer is preferably 3 nm to 100 nm, and more preferably 5 nm to 30 nm.
-激子阻擋層- -Exciton blocking layer-
所謂「激子阻擋層」是用以阻擋在發光層內由於電洞與電子再結合而生成的激子擴散至電荷傳輸層的層,藉由插入本層,變得可將激子有效率地閉合於發光層內,可使元件的發光效率提 高。激子阻擋層可在兩個以上的發光層鄰接的元件中,插入至鄰接的兩個發光層之間。 The so-called "exciton blocking layer" is a layer used to block the exciton generated by the recombination of holes and electrons in the light-emitting layer from diffusing into the charge transport layer. By inserting this layer, the exciton can be efficiently converted. Closed in the light-emitting layer, the light-emitting efficiency of the element can be improved high. The exciton blocking layer may be inserted between two adjacent light-emitting layers in an element adjacent to the two or more light-emitting layers.
作為激子阻擋層的材料,可使用公知的激子阻擋層材料。例如可列舉1,3-二咔唑基苯(mCP)或雙(2-甲基-8-羥基喹啉)-4-苯基苯酚鋁(III)(BAlq)。 As the material of the exciton blocking layer, a known exciton blocking layer material can be used. Examples include 1,3-dicarbazolylbenzene (mCP) or bis (2-methyl-8-hydroxyquinoline) -4-phenylaluminum (III) (BAlq).
-電洞傳輸層- -Hole transmission layer-
所謂「電洞傳輸層」包含具有傳輸電洞的功能的電洞傳輸材料,電洞傳輸層可設置單層或多層。 The so-called "hole transmission layer" includes a hole transmission material having a function of transmitting holes. The hole transmission layer may be provided in a single layer or multiple layers.
電洞傳輸材料是具有電洞的注入或傳輸、電子的障壁性的任一者的材料,可為有機物、無機物的任一者。在電洞傳輸層中,可自先前公知的化合物中選擇任意者而使用。該電洞傳輸材料例如可列舉卟啉衍生物、芳基胺衍生物、三唑衍生物、噁二唑衍生物、咪唑衍生物、聚芳基烷烴衍生物、吡唑啉衍生物及吡唑啉酮衍生物、苯二胺衍生物、芳基胺衍生物、經胺基取代的查耳酮衍生物、噁唑衍生物、苯乙烯基蒽衍生物、茀酮衍生物、腙衍生物、茋衍生物、矽氮烷衍生物、苯胺系共聚物、以及導電性高分子寡聚物、特別是噻吩寡聚物等,較佳的是使用卟啉衍生物、芳基胺衍生物及苯乙烯基胺衍生物,更佳的是使用芳基胺化合物。 The hole-transporting material is a material having any of injection or transmission of holes and barrier properties of electrons, and may be any of organic and inorganic substances. In the hole transport layer, any one of the conventionally known compounds can be selected and used. Examples of the hole transport material include porphyrin derivatives, arylamine derivatives, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, and pyrazoline. Ketone derivatives, phenylenediamine derivatives, arylamine derivatives, chalcone derivatives substituted with amine groups, oxazole derivatives, styryl anthracene derivatives, fluorenone derivatives, fluorene derivatives, fluorene derivatives Compounds, silazane derivatives, aniline copolymers, and conductive polymer oligomers, especially thiophene oligomers. Porphyrin derivatives, arylamine derivatives, and styrylamines are preferably used. The derivative is more preferably an arylamine compound.
-電子傳輸層- -Electronic transport layer-
所謂「電子傳輸層」包含具有傳輸電子的功能的材料,電子傳輸層可設置單層或多層。 The so-called "electron transport layer" includes materials having a function of transmitting electrons, and the electron transport layer may be provided in a single layer or a plurality of layers.
電子傳輸材料(亦存在兼作電洞阻擋材料的情況),只 要具有將自陰極注入的電子傳達至發光層的功能即可。電子傳輸層可自先前公知的化合物中選擇任意者而使用,例如可列舉萘、蒽、啡啉等多環芳香族衍生物、三(8-羥基喹啉)鋁(III)衍生物、氧化膦衍生物、經硝基取代的茀衍生物、二苯基醌衍生物、二氧化噻喃衍生物、碳二醯亞胺、亞茀基甲烷衍生物、蒽醌二甲烷及蒽酮衍生物、聯吡啶衍生物、喹啉衍生物、噁二唑衍生物、苯并咪唑衍生物、苯并噻唑衍生物、吲哚并咔唑衍生物等。另外亦可使用將該些材料導入至高分子鏈或將該些材料作為高分子的主鏈的高分子材料。 Electron-transporting material (also doubles as a hole blocking material), only It is sufficient to have a function of transmitting electrons injected from the cathode to the light emitting layer. The electron transporting layer can be selected from any of the conventionally known compounds and used, and examples thereof include polycyclic aromatic derivatives such as naphthalene, anthracene, and morpholine, tris (8-hydroxyquinoline) aluminum (III) derivatives, and phosphine oxide Derivatives, nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiorane oxide derivatives, carbodiimide, sulfenylmethane derivatives, anthraquinone dimethane and anthrone derivatives, Pyridine derivatives, quinoline derivatives, oxadiazole derivatives, benzimidazole derivatives, benzothiazole derivatives, indolocarbazole derivatives, and the like. Alternatively, a polymer material that introduces these materials into a polymer chain or uses these materials as a main chain of a polymer may be used.
[實施例] [Example]
以下,藉由實施例對本發明加以更詳細的說明,但本發明並不限定於該些實施例,只要不超過其主旨,則可以各種形態而實施。 Hereinafter, the present invention will be described in more detail through examples, but the present invention is not limited to these examples, and may be implemented in various forms as long as the gist is not exceeded.
量取化合物1-8(0.20g)與化合物2-10(0.80g),在研缽中一面搗碎一面進行混合,藉此製備預混合物H1。 Compound 1-8 (0.20 g) and compound 2-10 (0.80 g) were weighed out and mixed while mashing in a mortar to prepare a premix H1.
同樣地進行,使用表2中所示的第1主體與第2主體而製備預混合物H2~預混合物H9。 In the same manner, premixture H2 to premixture H9 were prepared using the first and second bodies shown in Table 2.
將第1主體與第2主體的種類及調配比表示於表2中。另外,化合物編號與所述例示化合物上所附的編號對應。 The types and blending ratios of the first body and the second body are shown in Table 2. The compound number corresponds to the number attached to the exemplified compound.
其次表示作為用以比較的主體而使用的化合物A及化合物B的化學式。 The chemical formulas of the compound A and the compound B used as a subject for comparison are shown next.
[化23]
於表1中表示化合物1-8、化合物1-24、化合物1-28、化合物1-46、化合物1-57、化合物2-10、化合物2-16、化合物2-19、以及化合物A及化合物B的50%重量減少溫度(T50)與電子親和力(EA)。 Table 1 shows compound 1-8, compound 1-24, compound 1-28, compound 1-46, compound 1-57, compound 2-10, compound 2-16, compound 2-19, and compound A and compound 50% weight reduction of B (T 50 ) and electron affinity (EA).
實施例1 Example 1
在形成有膜厚為110nm的包含ITO的陽極的玻璃基板上,藉由真空蒸鍍法以真空度為4.0×10-5Pa而積層各薄膜。首先,在ITO上將HAT-CN形成為25nm的厚度而作為電洞注入層,其次將NPD形成為30nm的厚度而作為電洞傳輸層。其次,將HT-1形成為10nm的厚度而作為電子阻擋層。繼而,自分別不同的蒸鍍源共蒸鍍作為主體的預混合物H1、作為發光摻雜劑的Ir(ppy)3,將發光層形成為40nm的厚度。此時,在Ir(ppy)3的濃度成為10wt%的蒸鍍條件下進行共蒸鍍。其次,將ET-1形成為20nm的厚度而作為電子傳輸層。進一步在電子傳輸層上將氟化鋰(LiF)形成為1nm的厚度而作為電子注入層。最後,在電子注入層上將鋁(Al)形成為70nm的厚度而作為陰極,從而製作有機EL元件。 Each thin film was laminated on a glass substrate on which an anode including ITO having a film thickness of 110 nm was formed with a vacuum degree of 4.0 × 10 -5 Pa by a vacuum evaporation method. First, HAT-CN was formed on ITO to a thickness of 25 nm as a hole injection layer, and NPD was formed to a thickness of 30 nm as a hole transport layer. Next, HT-1 was formed to a thickness of 10 nm as an electron blocking layer. Next, pre-mixture H1 as a host and Ir (ppy) 3 as a light-emitting dopant were co-evaporated from different vapor deposition sources to form a light-emitting layer with a thickness of 40 nm. At this time, co-evaporation was performed under vapor deposition conditions where the concentration of Ir (ppy) 3 was 10% by weight. Next, ET-1 was formed to a thickness of 20 nm as an electron transport layer. Further, lithium fluoride (LiF) was formed on the electron transport layer to a thickness of 1 nm as an electron injection layer. Finally, aluminum (Al) was formed on the electron injection layer to a thickness of 70 nm as a cathode, thereby fabricating an organic EL element.
實施例2~實施例9 Example 2 to Example 9
在實施例1中,使用預混合物H2~預混合物H9的任一者作為主體,除此以外與實施例1同樣地進行而製作有機EL元件。 In Example 1, an organic EL device was produced in the same manner as in Example 1 except that any one of the pre-mixture H2 to the pre-mixture H9 was used.
實施例10 Example 10
在實施例3中,在形成發光層後,將化合物1-8形成為10nm的厚度而作為電洞阻擋層,將ET-1形成為10nm的厚度而作為電子傳輸層,除此以外與實施例3同樣地進行而製作有機EL元件。 In Example 3, after forming the light-emitting layer, Compound 1-8 was formed to a thickness of 10 nm as a hole blocking layer, and ET-1 was formed to a thickness of 10 nm as an electron transport layer. 3 was performed in the same manner to produce an organic EL element.
實施例11 Example 11
在形成有膜厚為110nm的包含ITO的陽極的玻璃基板上,藉由真空蒸鍍法以真空度為4.0×10-5Pa而積層各薄膜。首先,在 ITO上將HAT-CN形成為25nm的厚度而作為電洞注入層,其次將NPD形成為30nm的厚度而作為電洞傳輸層。其次,將HT-1形成為10nm的厚度而作為電子阻擋層。其次,自分別不同的蒸鍍源共蒸鍍作為第1主體的化合物1-8、作為第2主體的化合物2-10、作為發光摻雜劑的Ir(ppy)3,將發光層形成為40nm的厚度。此時,在Ir(ppy)3的濃度為10wt%、第1主體與第2主體的重量比成為40:60的蒸鍍條件下進行共蒸鍍。其次,將ET-1形成為20nm的厚度而作為電子傳輸層。進一步在電子傳輸層上將LiF形成為1nm的厚度而作為電子注入層。最後,在電子注入層上將Al形成為70nm的厚度而作為陰極,從而製作有機EL元件。 Each thin film was laminated on a glass substrate on which an anode including ITO having a film thickness of 110 nm was formed with a vacuum degree of 4.0 × 10 -5 Pa by a vacuum evaporation method. First, HAT-CN was formed on ITO to a thickness of 25 nm as a hole injection layer, and NPD was formed to a thickness of 30 nm as a hole transport layer. Next, HT-1 was formed to a thickness of 10 nm as an electron blocking layer. Next, compounds 1-8 as the first host, compounds 2-10 as the second host, and Ir (ppy) 3 as a light-emitting dopant were co-evaporated from different vapor deposition sources to form a light-emitting layer of 40 nm. thickness of. At this time, co-evaporation was performed under vapor deposition conditions where the concentration of Ir (ppy) 3 was 10% by weight and the weight ratio of the first body to the second body was 40:60. Next, ET-1 was formed to a thickness of 20 nm as an electron transport layer. Further, LiF was formed on the electron transport layer to a thickness of 1 nm as an electron injection layer. Finally, Al was formed on the electron injection layer to a thickness of 70 nm as a cathode, thereby fabricating an organic EL element.
實施例12 Example 12
在實施例11中,使用化合物1-8作為第1主體,使用化合物2-19作為第2主體,除此以外與實施例11同樣地進行而製作有機EL元件。 An organic EL device was produced in the same manner as in Example 11 except that Compound 1-8 was used as the first host and Compound 2-19 was used as the second host.
實施例13 Example 13
在實施例11中,使用化合物1-24作為第1主體,使用化合物2-16作為第2主體,除此以外與實施例11同樣地進行而製作有機EL元件。 In Example 11, an organic EL device was produced in the same manner as in Example 11 except that Compounds 1-24 were used as the first host and Compounds 2-16 were used as the second host.
實施例14 Example 14
在實施例11中,使用化合物1-46作為第1主體,使用化合物2-19作為第2主體,除此以外與實施例11同樣地進行而製作有機EL元件。 An organic EL device was produced in the same manner as in Example 11 except that Compound 1-46 was used as the first host and Compound 2-19 was used as the second host.
實施例15 Example 15
在形成有膜厚為110nm的包含ITO的陽極的玻璃基板上,藉由真空蒸鍍法以真空度為4.0×10-5Pa而積層各薄膜。首先,在ITO上將HAT-CN形成為25nm的厚度而作為電洞注入層,其次將NPD形成為45nm的厚度而作為電洞傳輸層。其次,將HT-1形成為10nm的厚度而作為電子阻擋層。繼而,自分別不同的蒸鍍源共蒸鍍作為主體的預混合物H2、作為發光摻雜劑的Ir(piq)2acac,將發光層形成為40nm的厚度。此時,在Ir(piq)2acac的濃度成為6.0wt%的蒸鍍條件下進行共蒸鍍。進一步將化合物1-8形成為10nm的厚度而作為電洞阻擋層。其次,將ET-1形成為27.5nm的厚度而作為電子傳輸層。繼而,在電子傳輸層上將LiF形成為1nm的厚度而作為電子注入層。最後,在電子注入層上將Al形成為70nm的厚度而作為陰極,從而製作有機EL元件。 Each thin film was laminated on a glass substrate on which an anode including ITO having a film thickness of 110 nm was formed with a vacuum degree of 4.0 × 10 -5 Pa by a vacuum evaporation method. First, HAT-CN was formed on ITO to a thickness of 25 nm as a hole injection layer, and NPD was formed to a thickness of 45 nm as a hole transport layer. Next, HT-1 was formed to a thickness of 10 nm as an electron blocking layer. Next, pre-mixture H2 as a main body and Ir (piq) 2 acac as a light-emitting dopant were co-evaporated from different vapor deposition sources to form a light-emitting layer with a thickness of 40 nm. At this time, co-evaporation was performed under vapor deposition conditions where the concentration of Ir (piq) 2 acac was 6.0 wt%. Compound 1-8 was further formed to a thickness of 10 nm as a hole blocking layer. Next, ET-1 was formed to a thickness of 27.5 nm as an electron transport layer. Then, LiF was formed on the electron transport layer to a thickness of 1 nm as an electron injection layer. Finally, Al was formed on the electron injection layer to a thickness of 70 nm as a cathode, thereby fabricating an organic EL element.
實施例16、實施例17 Example 16, Example 17
在實施例15中,使用預混合物H3與預混合物H4的任一者作為主體,除此以外與實施例15同樣地進行而製作有機EL元件。 In Example 15, an organic EL device was produced in the same manner as in Example 15 except that either of the premixture H3 and the premixture H4 was used as a main body.
實施例18 Example 18
在形成有膜厚為110nm的包含ITO的陽極的玻璃基板上,藉由真空蒸鍍法以真空度為4.0×10-5Pa而積層各薄膜。首先,在ITO上將HAT-CN形成為25nm的厚度而作為電洞注入層,其次將NPD形成為45nm的厚度而作為電洞傳輸層。其次,將HT-1形成為10nm的厚度而作為電子阻擋層。繼而,自分別不同的蒸 鍍源共蒸鍍作為第1主體的化合物1-57、作為第2主體的化合物2-16、作為發光摻雜劑的Ir(piq)2acac,將發光層形成為40nm的厚度。此時,在Ir(piq)2acac的濃度為6.0wt%、第1主體與第2主體的重量比成為30:70的蒸鍍條件下進行共蒸鍍。進一步將化合物1-8形成為10nm的厚度而作為電洞阻擋層。其次,將ET-1形成為27.5nm的厚度而作為電子傳輸層。繼而,在電子傳輸層上將LiF形成為1nm的厚度而作為電子注入層。最後,在電子注入層上將Al形成為70nm的厚度而作為陰極,從而製作有機EL元件。 Each thin film was laminated on a glass substrate on which an anode including ITO having a film thickness of 110 nm was formed with a vacuum degree of 4.0 × 10 -5 Pa by a vacuum evaporation method. First, HAT-CN was formed on ITO to a thickness of 25 nm as a hole injection layer, and NPD was formed to a thickness of 45 nm as a hole transport layer. Next, HT-1 was formed to a thickness of 10 nm as an electron blocking layer. Then, compounds 1-57 as the first host, compounds 2-16 as the second host, and Ir (piq) 2 acac as a light-emitting dopant were co-evaporated from different vapor deposition sources to form the light-emitting layer as 40nm thickness. At this time, co-evaporation was performed under vapor deposition conditions where the concentration of Ir (piq) 2 acac was 6.0 wt% and the weight ratio of the first body to the second body was 30:70. Compound 1-8 was further formed to a thickness of 10 nm as a hole blocking layer. Next, ET-1 was formed to a thickness of 27.5 nm as an electron transport layer. Then, LiF was formed on the electron transport layer to a thickness of 1 nm as an electron injection layer. Finally, Al was formed on the electron injection layer to a thickness of 70 nm as a cathode, thereby fabricating an organic EL element.
實施例19 Example 19
在實施例18中,在第1主體與第2主體的重量比成為40:60的蒸鍍條件下進行共蒸鍍,除此以外在與實施例18同樣的條件下製作有機EL元件。 In Example 18, an organic EL device was produced under the same conditions as in Example 18, except that co-evaporation was performed under the deposition conditions where the weight ratio of the first body to the second body was 40:60.
實施例20 Example 20
在實施例18中,在第1主體與第2主體的重量比成為50:50的蒸鍍條件下進行共蒸鍍,除此以外在與實施例18同樣的條件下製作有機EL元件。 In Example 18, an organic EL element was produced under the same conditions as in Example 18, except that co-evaporation was performed under the deposition conditions where the weight ratio of the first body to the second body was 50:50.
比較例1 Comparative Example 1
在實施例1中,單獨使用化合物1-8作為主體,除此以外與實施例1同樣地進行而製作有機EL元件。發光層的厚度、發光摻雜劑濃度與實施例1同樣。 In Example 1, an organic EL device was produced in the same manner as in Example 1 except that Compounds 1 to 8 were used alone as the host. The thickness of the light-emitting layer and the concentration of the light-emitting dopant are the same as those in Example 1.
比較例2~比較例7 Comparative Example 2 to Comparative Example 7
在實施例1中,單獨使用表2中所示的化合物作為主體,除此以外與實施例1同樣地進行而製作有機EL元件。 In Example 1, an organic EL device was produced in the same manner as in Example 1 except that the compounds shown in Table 2 were used alone as the host.
比較例8 Comparative Example 8
在實施例11中,使用化合物1-8作為第1主體,使用化合物A作為第2主體,除此以外與實施例11同樣地進行而製作有機EL元件。 In Example 11, an organic EL device was produced in the same manner as in Example 11 except that Compound 1-8 was used as the first host and Compound A was used as the second host.
比較例9 Comparative Example 9
在實施例11中,使用化合物B作為第1主體,使用化合物2-10作為第2主體,除此以外與實施例11同樣地進行而製作有機EL元件。 In Example 11, an organic EL device was produced in the same manner as in Example 11 except that Compound B was used as the first host and Compound 2-10 was used as the second host.
比較例10~比較例11 Comparative Example 10 to Comparative Example 11
在實施例15中,單獨使用化合物1-8或化合物1-57作為主體,除此以外與實施例15同樣地進行而製作有機EL元件。 In Example 15, an organic EL device was produced in the same manner as in Example 15 except that Compound 1-8 or Compound 1-57 was used alone as the host.
其次表示實施例中所使用的化合物。 The compounds used in the examples are shown next.
[化24]
將第1主體與第2主體的預混合物的種類、第1主體與第2主體的種類、及比例表示於表2、表3中。 The types of the premix of the first body and the second body, the types of the first body and the second body, and their ratios are shown in Tables 2 and 3.
關於實施例1~實施例14及比較例1~比較例9中所製作的有機EL元件,於其上連接外部電源而施加直流電壓,結果均觀測到最大波長為530nm的發光光譜,可知獲得來自Ir(ppy)3的發光。而且,實施例15~實施例20及比較例10~比較例11中所製作的有機EL元件均觀測到最大波長為620nm的發光光譜,可知獲得來自Ir(pic)2acac的發光。 Regarding the organic EL elements produced in Examples 1 to 14 and Comparative Examples 1 to 9, a DC voltage was applied to an external power source connected to the organic EL elements. As a result, light emission spectra with a maximum wavelength of 530 nm were all observed. Ir (ppy) 3 emits light. In addition, the organic EL elements produced in Examples 15 to 20 and Comparative Examples 10 to 11 all observed an emission spectrum with a maximum wavelength of 620 nm, and it was found that light emission from Ir (pic) 2 acac was obtained.
將所製作的有機EL元件的亮度、驅動電壓、發光效率、亮度半衰壽命表示於表4及表5中。於表中,亮度、驅動電壓、發光效率是驅動電流為20mA/cm2時的值,是初始特性。在表4中,LT70是在初始亮度為9000cd/m2時,亮度衰減至初始亮度的70%所花費的時間;在表5中,LT95是在初始亮度為3700cd/m2時,亮度衰減至初始亮度的95%所花費的時間,該些為壽命特性。 The brightness, driving voltage, luminous efficiency, and brightness half-life of the produced organic EL element are shown in Tables 4 and 5. In the table, brightness, driving voltage, and luminous efficiency are values when the driving current is 20 mA / cm 2 and are initial characteristics. In Table 4, LT70 is the time it takes for the brightness to decay to 70% of the initial brightness when the initial brightness is 9000 cd / m 2 ; In Table 5, LT95 is the time when the initial brightness is 3700 cd / m 2 to decay to The time taken for 95% of the initial brightness, these are life characteristics.
根據表4與表5可知:若混合使用通式(1)所表示的第1主體與通式(2)所表示的第2主體,則與分別單獨使用的情況相比而言,壽命特性明顯增長。而且可知,即使混合使用第1主體與第2主體,但在其中一者並非通式(1)或通式(2)的化合物的情況下,驅動電壓高,無法獲得良好的壽命特性。 From Tables 4 and 5, it can be seen that if the first main body represented by the general formula (1) and the second main body represented by the general formula (2) are used in combination, the life characteristics are more obvious than when they are used separately. increase. It was also found that even if the first and second bodies are mixed, when one of them is not a compound of the general formula (1) or the general formula (2), the driving voltage is high and good life characteristics cannot be obtained.
而且可知,若如實施例10或實施例15~實施例18那樣使用通式(1)所表示的化合物作為電洞阻擋材料,則壽命特性增長。 In addition, it can be seen that if a compound represented by the general formula (1) is used as a hole blocking material as in Example 10 or Examples 15 to 18, life characteristics will increase.
量取化合物1-8(0.40g)、化合物2-10(0.30g)、及PH-1(0.30g),在研缽中一面搗碎一面進行混合,藉此製備預混合物H10。 Compound 1-8 (0.40 g), compound 2-10 (0.30 g), and PH-1 (0.30 g) were weighed out and mixed in a mortar while being mashed to prepare a premix H10.
量取化合物1-8(0.40g)、化合物2-10(0.30g)、及PH-2(0.30g),在研缽中一面搗碎一面進行混合,藉此製備預混合物H11。 Compound 1-8 (0.40 g), compound 2-10 (0.30 g), and PH-2 (0.30 g) were weighed out and mixed while mashing in a mortar to prepare a premix H11.
預混合物H10、預混合物H11中的調配比是第一主體(化合物1-8)為40%、第二主體(化合物2-10)為30%、第三主體(PH-1 或PH-2)為30%。 The blending ratio in pre-mixture H10 and pre-mixture H11 is 40% for the first body (Compound 1-8), 30% for the second body (Compound 2-10), and the third body (PH-1 Or PH-2) is 30%.
實施例21 Example 21
在實施例1中,使用預混合物H10作為主體,除此以外與實施例1同樣地進行而製作有機EL元件。 In Example 1, an organic EL device was produced in the same manner as in Example 1 except that the premix H10 was used as a main component.
實施例22 Example 22
在實施例1中,使用預混合物H11作為主體,除此以外與實施例1同樣地進行而製作有機EL元件。 In Example 1, an organic EL device was produced in the same manner as in Example 1 except that the premix H11 was used as a main component.
關於實施例21與實施例22中所製作的有機EL元件,於其上連接外部電源而施加直流電壓,結果均觀測到最大波長為530nm的發光光譜,可知獲得來自Ir(ppy)3的發光。 Example 21 About the organic EL element prepared in Example 22, a DC voltage is applied thereto on the external power supply, the results were observed emission spectrum maximum wavelength of 530nm, it was found to obtain light emission from Ir (ppy) 3 in.
將所製作的有機EL元件的亮度、驅動電壓、發光效率、亮度半衰壽命表示於表6中。於表中,亮度、驅動電壓、發光效率是驅動電流為20mA/cm2時的值,是初始特性。在表中,LT70是在初始亮度為9000cd/m2時,亮度衰減至初始亮度的70%所花費的時間,其為壽命特性。 Table 6 shows the brightness, driving voltage, luminous efficiency, and brightness half-life of the produced organic EL element. In the table, brightness, driving voltage, and luminous efficiency are values when the driving current is 20 mA / cm 2 and are initial characteristics. In the table, LT70 is the time it takes for the brightness to decay to 70% of the initial brightness when the initial brightness is 9000 cd / m 2 , and it is a lifetime characteristic.
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