TWI671865B - Glass substrate, laminated body using the same, and method for producing glass substrate - Google Patents

Glass substrate, laminated body using the same, and method for producing glass substrate Download PDF

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Publication number
TWI671865B
TWI671865B TW105102592A TW105102592A TWI671865B TW I671865 B TWI671865 B TW I671865B TW 105102592 A TW105102592 A TW 105102592A TW 105102592 A TW105102592 A TW 105102592A TW I671865 B TWI671865 B TW I671865B
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glass substrate
substrate
item
glass
patent application
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TW105102592A
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Chinese (zh)
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TW201637144A (en
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片山裕貴
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日商日本電氣硝子股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
    • C03B17/06—Forming glass sheets
    • C03B17/064—Forming glass sheets by the overflow downdraw fusion process; Isopipes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/355—Texturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/001—Other surface treatment of glass not in the form of fibres or filaments by irradiation by infrared light
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561—Batch processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C03C3/093—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium containing zinc or zirconium
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    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

本發明的技術性課題在於創造一種適於支撐供於高密度配線的加工基板、且可準確地辨別生產資訊等的玻璃基板及使用其的積層體。本發明的玻璃基板的特徵在於：為了解決該技術性課題，整體板厚偏差未滿2.0μm，且具有包含多個點的資訊辨別部。 A technical problem of the present invention is to create a glass substrate suitable for supporting a processing substrate for high-density wiring, and capable of accurately discriminating production information, and a laminated body using the same. The glass substrate of the present invention is characterized in that in order to solve this technical problem, the overall plate thickness deviation is less than 2.0 μm, and it has an information discrimination section including a plurality of points.

Description

玻璃基板、使用其的積層體及玻璃基板的製造方法 Glass substrate, laminated body using the same, and method for manufacturing glass substrate

本發明是有關於一種玻璃基板及使用其的積層體，具體而言是有關於一種於半導體封裝體的製造步驟中用於支撐加工基板的玻璃基板及使用其的積層體。 The present invention relates to a glass substrate and a laminated body using the same, and more particularly to a glass substrate for supporting a processing substrate in a manufacturing step of a semiconductor package and a laminated body using the same.

對行動電話、筆記型個人電腦、個人資料助理(Personal Data Assistance，PDA)等可攜式電子設備要求小型化及輕量化。隨之該些電子設備中所使用的半導體晶片的安裝空間亦受到嚴格限制，半導體晶片的高密度的安裝成為課題。因此，近年來藉由三維安裝技術，即，將半導體晶片彼此積層，將各半導體晶片間進行配線連接，來實現半導體封裝體的高密度安裝。 Portable electronic devices such as mobile phones, notebook personal computers, and Personal Data Assistance (PDA) are required to be miniaturized and lightweight. Following this, the mounting space for semiconductor wafers used in these electronic devices is also strictly limited, and high-density mounting of semiconductor wafers has become a problem. Therefore, in recent years, high-density mounting of semiconductor packages has been achieved by three-dimensional mounting technology, that is, by stacking semiconductor wafers on each other and wiring connections between the semiconductor wafers.

並且，現有的晶圓級封裝體(Wafer Level Package，WLP)是藉由以晶圓的狀態形成凸塊後，利用切割加以單片化而製作。然而，現有的WLP中難以增加接腳數，且是以半導體晶片的背面露出的狀態安裝，故有半導體晶片容易產生缺損等問題。 In addition, a conventional wafer level package (WLP) is produced by forming bumps in a wafer state and then singulating the wafers into individual pieces. However, in the conventional WLP, it is difficult to increase the number of pins and the semiconductor wafer is mounted in a state where the back surface of the semiconductor wafer is exposed. Therefore, there are problems that the semiconductor wafer is prone to defects.

因此，作為新穎的WLP，提出一種扇出(fan out)型WLP。扇出型WLP能夠增加接腳數，且藉由保護半導體晶片的端部，可防止半導體晶片的缺損等。 Therefore, as a novel WLP, a fan out type WLP is proposed. The fan-out WLP can increase the number of pins, and by protecting the ends of the semiconductor wafer, it is possible to prevent the semiconductor wafer from being damaged.

扇出型WLP中具有：利用樹脂的密封材使多個半導體晶片成型而形成加工基板後，對加工基板的一個表面進行配線的步驟；以及形成焊料凸塊的步驟等。 The fan-out WLP includes a step of forming a processed substrate by molding a plurality of semiconductor wafers with a resin sealing material, and then wiring the one surface of the processed substrate; and a step of forming a solder bump.

該些步驟伴有約200℃~300℃的熱處理，故有密封材變形、加工基板的尺寸發生變化之虞。若加工基板的尺寸發生變化，則難以對加工基板的一個表面進行高密度配線，且亦難以準確地形成焊料凸塊。進而，於在加工基板內半導體晶片的比例少、密封材的比例多時，該傾向變得顯著。 These steps are accompanied by a heat treatment of about 200 ° C to 300 ° C, so that the sealing material may be deformed and the size of the processed substrate may change. If the size of the processing substrate is changed, it is difficult to perform high-density wiring on one surface of the processing substrate, and it is also difficult to accurately form solder bumps. Furthermore, this tendency becomes remarkable when the ratio of a semiconductor wafer in a processed substrate is small and the ratio of a sealing material is large.

[現有技術文獻] [Prior Art Literature]

[專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2000-312983號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2000-312983

針對所述問題，有效的是使用玻璃基板作為支撐基板。玻璃基板易使表面平滑化，且具有剛性。因而，若使用玻璃基板，則能夠提高積層體整體的剛性，容易抑制加工基板的翹曲變形，從而牢固且準確地支撐加工基板。 In order to solve the problem, it is effective to use a glass substrate as a support substrate. The glass substrate is easy to smooth and has rigidity. Therefore, if a glass substrate is used, it is possible to increase the rigidity of the entire laminated body, to easily suppress warpage and deformation of the processing substrate, and to support the processing substrate firmly and accurately.

然而，即便於使用玻璃基板作為支撐基板時，亦存在難以對加工基板的一個表面進行高密度配線的情況。 However, even when a glass substrate is used as a support substrate, it is sometimes difficult to perform high-density wiring on one surface of a processed substrate.

並且，若於玻璃基板的表面形成(標記(marking))二維碼的資訊辨別部(標記(mark))，則可對玻璃基板的生產資訊等進行管理並加以識別。該資訊辨別部通常形成於玻璃基板的周 邊區域，且以文字、記號等的形式由人的眼睛等來識別。進而認為，玻璃基板的資訊辨別部亦藉由電荷耦合元件(Charge Coupled Device，CCD)相機等光學元件來自動地辨別。此時，對資訊辨別部要求於自動化步驟中亦能夠準確地辨別。 In addition, if (marking) a two-dimensional code information identification unit (mark) is formed on the surface of the glass substrate, the production information and the like of the glass substrate can be managed and identified. The information discriminating section is usually formed around the glass substrate. The side area is recognized by human eyes and the like in the form of characters, marks, and the like. Furthermore, it is thought that the information discriminating part of the glass substrate is also automatically discriminated by an optical element such as a Charge Coupled Device (CCD) camera. At this time, it is required that the information discrimination section can also accurately discriminate in the automated step.

作為形成資訊辨別部的方法，例如於專利文獻1中揭示如下方法，所述方法包括：於被標記材的表面形成膜或附著物的第一步驟，以及對形成膜或附著物的部分照射雷射光線，於將膜或附著物自被標記材去除的過程中，於被標記材的表面形成凹凸的第二步驟。然而，於專利文獻1所記載的方法中，由於在玻璃基板的表面形成有凹凸，故無法高精度地支撐加工基板，難以對加工基板的一個表面進行高密度配線。 As a method of forming the information discriminating section, for example, Patent Document 1 discloses a method including a first step of forming a film or an attachment on a surface of a material to be marked, and irradiating a part where the film or the attachment is formed with lightning The second step of forming light on the surface of the marked material during the process of removing the film or the attachment from the marked material by radiating light. However, in the method described in Patent Document 1, since the unevenness is formed on the surface of the glass substrate, it is impossible to support the processing substrate with high accuracy, and it is difficult to perform high-density wiring on one surface of the processing substrate.

本發明鑒於所述情況而完成，其技術性課題在於創造一種適於支撐供於高密度配線的加工基板、且可準確地辨別生產資訊等的玻璃基板及使用其的積層體。 The present invention has been made in view of the above circumstances, and a technical problem thereof is to create a glass substrate suitable for supporting a processing substrate for high-density wiring, and capable of accurately discriminating production information, and a laminated body using the same.

本發明者反覆進行各種實驗，結果發現藉由減少玻璃基板的整體板厚偏差，進而藉由形成特定的資訊辨別部，可解決所述技術性課題，從而提出本發明。即，本發明的玻璃基板的特徵在於：整體板厚偏差未滿2.0μm，且具有包含多個點的資訊辨別部。此處，「整體板厚偏差」為玻璃基板整體的最大板厚與最小板厚的差，例如能夠藉由神鋼(Kobelco)科研公司製造的SBW-331ML/d而進行測定。 The inventors conducted various experiments repeatedly, and as a result, they found that the technical problem can be solved by reducing the variation in the overall thickness of the glass substrate, and by forming a specific information discriminating section, and thus came up with the present invention. That is, the glass substrate of the present invention is characterized by having an overall plate thickness deviation of less than 2.0 μm and having an information discriminating section including a plurality of points. Here, the "overall plate thickness deviation" is the difference between the maximum and minimum plate thicknesses of the entire glass substrate, and can be measured, for example, by SBW-331ML / d manufactured by Kobelco Scientific Corporation.

本發明的玻璃基板的整體板厚偏差未滿2.0μm。若整體板厚偏差小至未滿2.0μm，則容易提高加工處理的精度。特別是由於可提高配線精度，故能夠進行高密度配線。並且玻璃基板的面內強度提高，玻璃基板及積層體變得難以破損。進而可增加玻璃基板的再利用次數(耐用數)。 The entire plate thickness deviation of the glass substrate of the present invention is less than 2.0 μm. If the variation in overall plate thickness is as small as less than 2.0 μm, it is easy to improve the accuracy of processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed. In addition, the in-plane strength of the glass substrate is increased, and the glass substrate and the laminated body are hardly damaged. Furthermore, the number of times of reuse (durability) of the glass substrate can be increased.

本發明的玻璃基板具有包含多個點的資訊辨別部。如此，半導體封裝體的製造步驟中，能夠藉由CCD相機等光學元件來自動且準確地辨別玻璃基板的生產資訊等。 The glass substrate of the present invention includes an information discrimination section including a plurality of points. In this way, in the manufacturing steps of the semiconductor package, it is possible to automatically and accurately discriminate the production information of the glass substrate by an optical element such as a CCD camera.

第二，本發明的玻璃基板較佳為點是藉由利用雷射照射的熱衝擊來形成。如此，可於不對玻璃基板的整體板厚偏差造成不良影響的狀態下簡便地形成微小的點。 Secondly, it is preferable that the glass substrate of the present invention is formed by using thermal shock by laser irradiation. In this way, it is possible to easily form minute dots without adversely affecting the entire thickness variation of the glass substrate.

第三，本發明的玻璃基板較佳為點是由自內部向表層延伸的裂紋形成。如此，可於不對玻璃基板的整體板厚偏差造成不良影響的狀態下簡便地形成微小的點。 Third, the glass substrate of the present invention is preferably formed by cracks extending from the inside to the surface layer. In this way, it is possible to easily form minute dots without adversely affecting the entire thickness variation of the glass substrate.

第四，本發明的玻璃基板較佳為相鄰點的中心間隔為100μm以下。如此，可於狹小的區域刻寫大量的資訊。 Fourth, the glass substrate of the present invention preferably has a center interval between adjacent dots of 100 μm or less. In this way, a lot of information can be written in a small area.

第五，本發明的玻璃基板較佳為點的直徑為0.5μm~10μm。如此，可於狹小的區域刻寫大量的資訊。 Fifth, the glass substrate of the present invention preferably has a dot diameter of 0.5 μm to 10 μm. In this way, a lot of information can be written in a small area.

第六，本發明的玻璃基板較佳為於資訊辨別部輸入玻璃基板的製造公司名、玻璃基板的材質、玻璃基板的熱膨脹係數、玻璃基板的外徑、玻璃基板的板厚、玻璃基板的整體板厚偏差、玻璃基板的製造年月日、玻璃基板的出貨年月日、玻璃基板的序 號(個體辨別編號)中的一種或兩種以上的資訊。 Sixth, the glass substrate of the present invention is preferably input the name of the glass substrate manufacturing company, the material of the glass substrate, the coefficient of thermal expansion of the glass substrate, the outer diameter of the glass substrate, the thickness of the glass substrate, and the entire glass substrate in the information discrimination section. Plate thickness deviation, date of manufacture of glass substrate, date of shipment of glass substrate, sequence of glass substrate Information (individual identification number).

第七，本發明的玻璃基板較佳為翹曲量為60μm以下。此處，「翹曲量」是指玻璃基板整體的最高位點與最小平方焦點面之間的最大距離的絕對值、和最低位點與最小平方焦點面之間的最大距離的絕對值的合計值，例如能夠藉由神鋼(Kobelco)科研公司製造的SBW-331ML/d而進行測定。 Seventh, the glass substrate of the present invention preferably has a warpage amount of 60 μm or less. Here, the "warpage amount" refers to the total of the absolute value of the maximum distance between the highest point and the least square focal plane of the entire glass substrate, and the absolute value of the maximum distance between the lowest point and the least square focal plane. The value can be measured by, for example, SBW-331ML / d manufactured by Kobelco Scientific.

第八，本發明的玻璃基板較佳為表面的全部或一部分為研磨面。 Eighth, it is preferable that all or a part of the surface of the glass substrate of the present invention be a polished surface.

第九，本發明的玻璃基板較佳為藉由溢流下拉法(overflow down-draw method)而成形，即，於玻璃內部具有成形合流面。 Ninth, the glass substrate of the present invention is preferably formed by an overflow down-draw method, that is, it has a forming confluence surface inside the glass.

第十，本發明的玻璃基板較佳為外形為晶圓形狀。 Tenth, the glass substrate of the present invention preferably has a wafer shape.

第十一，本發明的玻璃基板較佳為於半導體封裝體的製造步驟中用於支撐加工基板。 Eleventh, the glass substrate of the present invention is preferably used for supporting a processing substrate in a manufacturing step of a semiconductor package.

第十二，本發明的積層體較佳為至少具備加工基板及用於支撐加工基板的玻璃基板，且玻璃基板為所述玻璃基板。 Twelfth, the laminated body of the present invention preferably includes at least a processing substrate and a glass substrate for supporting the processing substrate, and the glass substrate is the glass substrate.

第十三，本發明的積層體較佳為加工基板至少具備利用密封材而成型的半導體晶片。 Thirteenth, the laminated body of the present invention is preferably a processing substrate including at least a semiconductor wafer molded with a sealing material.

第十四，本發明的玻璃基板的製造方法的特徵在於包括：(1)將玻璃原板切斷而獲得玻璃基板的步驟；(2)以玻璃基板的整體板厚偏差未滿2.0μm的方式對玻璃基板的表面進行研磨的步驟；以及(3)藉由利用雷射照射的熱衝擊來形成自玻璃基板 的內部向表層延伸的裂紋，藉此形成包括多個點的資訊辨別部的步驟。 Fourteenth, the method for manufacturing a glass substrate of the present invention is characterized by including: (1) a step of cutting a glass original plate to obtain a glass substrate; and (2) comparing the entire thickness of the glass substrate to less than 2.0 μm. A step of polishing the surface of the glass substrate; and (3) forming a self-glass substrate by thermal shock using laser irradiation A crack extending from the inside to the surface, thereby forming an information discriminating section including a plurality of points.

1、27‧‧‧積層體 1.27‧‧‧layer

10、26‧‧‧玻璃基板 10, 26‧‧‧ glass substrate

11、24‧‧‧加工基板 11, 24‧‧‧ processing substrate

12‧‧‧剝離層 12‧‧‧ peeling layer

13、21、25‧‧‧接著層 13, 21, 25‧‧‧continued

20‧‧‧支撐構件 20‧‧‧ support member

22‧‧‧半導體晶片 22‧‧‧Semiconductor wafer

23‧‧‧密封材 23‧‧‧sealing material

28‧‧‧配線 28‧‧‧ Wiring

29‧‧‧焊料凸塊 29‧‧‧solder bump

圖1是表示本發明的積層體的一例的概念立體圖。 FIG. 1 is a conceptual perspective view showing an example of a laminated body of the present invention.

圖2(a)~圖2(g)是表示扇出型WLP的製造步驟的概念剖面圖。 2 (a) to 2 (g) are conceptual cross-sectional views showing manufacturing steps of a fan-out WLP.

圖3是表示[實施例1]的玻璃基板的資訊辨別部的顯微鏡照片。 FIG. 3 is a microscope photograph showing an information discriminating portion of a glass substrate in [Example 1].

本發明的玻璃基板中，整體板厚偏差較佳為未滿2μm、1.5μm以下、1μm以下、未滿1μm、0.8μm以下、0.1μm~0.9μm、特別是0.2μm~0.7μm。整體板厚偏差越小，越容易提高加工處理的精度。特別是由於可提高配線精度，故能夠進行高密度配線。且玻璃基板的強度提高，玻璃基板及積層體變得難以破損。進而可增加玻璃基板的再利用次數(耐用數)。 In the glass substrate of the present invention, the overall plate thickness deviation is preferably less than 2 μm, less than 1.5 μm, less than 1 μm, less than 1 μm, less than 0.8 μm, 0.1 μm to 0.9 μm, and particularly 0.2 μm to 0.7 μm. The smaller the overall plate thickness deviation, the easier it is to improve the accuracy of processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed. In addition, the strength of the glass substrate is improved, and the glass substrate and the laminated body are hardly damaged. Furthermore, the number of times of reuse (durability) of the glass substrate can be increased.

本發明的玻璃基板較佳為具有包含多個點的資訊辨別部，且點是藉由利用雷射照射的熱衝擊來形成。作為雷射，能夠使用各種雷射，例如能夠使用釔鋁石榴石(Yttrium Aluminum Garnet，YAG)雷射、半導體雷射、CO2雷射等。特別是，就形成微小的點的觀點而言，雷射較佳為使用波長300nm~400nm的半導體雷射。且，雷射輸出較佳為30mW~75mW。如此，難以產 生玻璃基板的破損、連結點之間的裂紋。 The glass substrate of the present invention preferably has an information discriminating section including a plurality of dots, and the dots are formed by thermal shock using laser irradiation. As the laser, various lasers can be used, and for example, a yttrium aluminum garnet (YAG) laser, a semiconductor laser, a CO 2 laser, or the like can be used. In particular, from the viewpoint of forming minute dots, it is preferable to use a semiconductor laser having a wavelength of 300 to 400 nm. In addition, the laser output is preferably 30mW to 75mW. In this way, breakage of the glass substrate and cracks between the connection points are unlikely to occur.

本發明的玻璃基板中，點較佳為由自內部向表層延伸的裂紋形成。裂紋深度較佳為1μm~70μm、5μm~50μm、10μm~40μm、特別是20μm~40μm。如此，難以產生玻璃基板的破損、連結點之間的裂紋。但是，若裂紋深度過大，則玻璃基板容易破損。 In the glass substrate of the present invention, the dots are preferably formed by cracks extending from the inside to the surface layer. The crack depth is preferably 1 μm to 70 μm, 5 μm to 50 μm, 10 μm to 40 μm, and particularly 20 μm to 40 μm. In this way, breakage of the glass substrate and cracks between the connection points are unlikely to occur. However, if the crack depth is too large, the glass substrate is easily broken.

相鄰點的中心間隔較佳為100μm以下、60μm以下、50μm以下、40μm以下、特別是15μm~35μm。點的直徑較佳為0.5μm~10μm、特別是1μm~5μm。如此，可於狹小的區域刻寫大量的資訊。但是，若相鄰點的中心間隔過小，則裂紋容易於點之間傳播。且，若點的直徑過大，則裂紋容易於點之間傳播。 The center distance between adjacent dots is preferably 100 μm or less, 60 μm or less, 50 μm or less, 40 μm or less, and particularly 15 μm to 35 μm. The diameter of the dot is preferably 0.5 μm to 10 μm, and particularly 1 μm to 5 μm. In this way, a lot of information can be written in a small area. However, if the distance between the centers of adjacent points is too small, cracks tend to propagate between the points. If the diameter of the dots is too large, cracks tend to propagate between the dots.

本發明的玻璃基板中，較佳為於資訊辨別部輸入生產資訊，例如，就生產管理的觀點而言，較佳為輸入玻璃基板的製造公司名、玻璃基板的材質、玻璃基板的熱膨脹係數、玻璃基板的外徑、玻璃基板的板厚、玻璃基板的整體板厚偏差、玻璃基板的製造年月日、玻璃基板的出貨年月日、玻璃基板的序號中的一種或兩種以上的資訊。 In the glass substrate of the present invention, it is preferable to input production information in the information discrimination section. For example, in terms of production management, it is preferable to input the name of the glass substrate manufacturing company, the material of the glass substrate, the thermal expansion coefficient of the glass substrate, One or two or more pieces of information on the outer diameter of the glass substrate, the thickness of the glass substrate, the deviation of the overall thickness of the glass substrate, the date of manufacture of the glass substrate, the date of shipment of the glass substrate, and the serial number of the glass substrate .

翹曲量較佳為60μm以下、55μm以下、50μm以下、1μm~45μm、特別是5μm~40μm。翹曲量越小，越容易提高加工處理的精度。特別是由於可提高配線精度，故能夠進行高密度配線。進而可增加玻璃基板的再利用次數(耐用數)。 The amount of warpage is preferably 60 μm or less, 55 μm or less, 50 μm or less, 1 μm to 45 μm, and particularly 5 μm to 40 μm. The smaller the amount of warpage, the easier it is to improve the accuracy of processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed. Furthermore, the number of times of reuse (durability) of the glass substrate can be increased.

表面的算術平均粗糙度Ra較佳為10nm以下、5nm以 下、2nm以下、1nm以下、特別是0.5nm以下。表面的算術平均粗糙度Ra越小，越容易提高加工處理的精度。特別是由於可提高配線精度，故能夠進行高密度配線。且玻璃基板的強度提高，玻璃基板及積層體變得難以破損。進而可增加玻璃基板的再利用次數(支撐次數)。另外，「算術平均粗糙度Ra」能夠藉由原子力顯微鏡(Atomic Force Microscope，AFM)而進行測定。 The arithmetic average roughness Ra of the surface is preferably 10 nm or less and 5 nm or less 2 nm or less, 1 nm or less, and particularly 0.5 nm or less. The smaller the arithmetic average roughness Ra of the surface, the easier it is to improve the accuracy of processing. In particular, since wiring accuracy can be improved, high-density wiring can be performed. In addition, the strength of the glass substrate is improved, and the glass substrate and the laminated body are hardly damaged. Furthermore, the number of reuses (number of supports) of the glass substrate can be increased. The "arithmetic average roughness Ra" can be measured by an atomic force microscope (AFM).

本發明的玻璃基板可將表面的全部或一部分以未研磨的狀態供於使用，但較佳為表面的全部或一部分為研磨面，更佳為以面積比計而表面的50%以上為研磨面，進而佳為表面的70%以上為研磨面，特佳為表面的90%以上為研磨面。如此，容易減小整體板厚偏差，且亦容易地減小翹曲量。 The glass substrate of the present invention can use all or a part of the surface in an unpolished state, but it is preferred that all or a part of the surface be a polished surface, and more preferably that 50% or more of the surface be a polished surface in terms of area ratio. More preferably, more than 70% of the surface is a polished surface, and particularly preferably more than 90% of the surface is a polished surface. In this way, it is easy to reduce the variation in overall plate thickness, and it is also easy to reduce the amount of warpage.

研磨處理的方法可採用各種方法，但較佳為如下方法：以一對研磨墊夾持玻璃基板的兩表面，一面使玻璃基板與一對研磨墊一同旋轉，一面對玻璃基板進行研磨處理。進而，一對研磨墊較佳為外徑不同，且較佳為在研磨時以玻璃基板的一部分間歇性地超出研磨墊的方式進行研磨處理。藉此，容易減小整體板厚偏差，且亦容易減小翹曲量。另外，研磨處理中，研磨深度並無特別限定，研磨深度較佳為50μm以下、30μm以下、20μm以下、特別是10μm以下。研磨深度越小，玻璃基板的生產性越提高。 Various methods can be used for the polishing treatment, but the method is preferably as follows: the two surfaces of the glass substrate are held by a pair of polishing pads, while the glass substrate is rotated together with the pair of polishing pads, and the glass substrate is polished while facing the glass substrate. Furthermore, it is preferable that the pair of polishing pads have different outer diameters, and it is preferable to perform a polishing process such that a part of the glass substrate intermittently exceeds the polishing pad during polishing. Thereby, it is easy to reduce the deviation of the entire plate thickness, and it is also easy to reduce the amount of warpage. In the polishing treatment, the polishing depth is not particularly limited, and the polishing depth is preferably 50 μm or less, 30 μm or less, 20 μm or less, and particularly 10 μm or less. The smaller the polishing depth, the higher the productivity of the glass substrate.

本發明的玻璃基板較佳為晶圓狀(大致正圓狀)，其直徑較佳為100mm以上、500mm以下，特別是150mm以上、450mm以下。如此，容易適用於半導體封裝體的製造步驟。亦可視需 要加工成其他形狀，例如矩形等形狀。 The glass substrate of the present invention is preferably in a wafer shape (substantially perfect circular shape), and its diameter is preferably 100 mm or more and 500 mm or less, particularly 150 mm or more and 450 mm or less. In this way, it is easy to apply to the manufacturing steps of the semiconductor package. Also available on request To be processed into other shapes, such as rectangular shapes.

本發明的玻璃基板中，板厚較佳為未滿2.0mm、1.5mm以下、1.2mm以下、1.1mm以下、1.0mm以下、特別是0.9mm以下。板厚越薄，積層體的質量越變輕，故操作性提高。另一方面，若板厚過薄，則玻璃基板本身的強度降低，變得難以發揮作為支撐基板的性能。因而，板厚較佳為0.1mm以上、0.2mm以上、0.3mm以上、0.4mm以上、0.5mm以上、0.6mm以上、特別是超過0.7mm。 In the glass substrate of the present invention, the thickness is preferably less than 2.0 mm, 1.5 mm or less, 1.2 mm or less, 1.1 mm or less, 1.0 mm or less, and particularly 0.9 mm or less. The thinner the plate thickness, the lighter the mass of the laminated body, so the operability is improved. On the other hand, when the plate thickness is too thin, the strength of the glass substrate itself decreases, and it becomes difficult to exhibit the performance as a support substrate. Therefore, the plate thickness is preferably 0.1 mm or more, 0.2 mm or more, 0.3 mm or more, 0.4 mm or more, 0.5 mm or more, 0.6 mm or more, and especially more than 0.7 mm.

本發明的玻璃基板較佳為具有以下特性。 The glass substrate of the present invention preferably has the following characteristics.

本發明的玻璃基板中，30℃~380℃的溫度範圍下的平均熱膨脹係數較佳為0×10-7/℃以上且165×10-7/℃以下。藉此，容易將加工基板與玻璃基板的熱膨脹係數相匹配。而且，若兩者的熱膨脹係數相匹配，則於加工處理時容易抑制加工基板的尺寸變化(特別是翹曲變形)。結果能夠對加工基板的一個表面進行高密度配線，且亦能夠準確地形成焊料凸塊。另外，「30℃~380℃的溫度範圍下的平均熱膨脹係數」能夠利用膨脹計(dilatometer)而進行測定。 In the glass substrate of the present invention, the average thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C is preferably 0 × 10 -7 / ° C or more and 165 × 10 -7 / ° C or less. This makes it easy to match the thermal expansion coefficients of the processed substrate and the glass substrate. Furthermore, if the thermal expansion coefficients of the two are matched, it is easy to suppress dimensional changes (especially warpage deformation) of the processed substrate during processing. As a result, high-density wiring can be performed on one surface of the processed substrate, and solder bumps can be accurately formed. The "average thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C" can be measured using a dilatometer.

關於30℃~380℃的溫度範圍下的平均熱膨脹係數，於在加工基板內半導體晶片的比例少、密封材的比例多時，較佳為使其上升，相反，於在加工基板內半導體晶片的比例多、密封材的比例少時，較佳為使其降低。 The average thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is preferably increased when the proportion of semiconductor wafers in the processing substrate is small and the proportion of sealing materials is large. Conversely, the When there are many ratios and the ratio of a sealing material is small, it is preferable to reduce it.

於將30℃~380℃的溫度範圍下的平均熱膨脹係數設為 0×10-7/℃以上且未滿50×10-7/℃時，玻璃基板較佳為：作為玻璃組成，以質量%計而含有55%~75%的SiO2、15%~30%的Al2O3、0.1%~6%的Li2O、0%~8%的Na2O+K2O、0%~10%的MgO+CaO+SrO+BaO，或者亦較佳為含有55%~75%的SiO2、10%~30%的Al2O3、0%~0.3%的Li2O+Na2O+K2O、5%~20%的MgO+CaO+SrO+BaO。於將30℃~380℃的溫度範圍下的平均熱膨脹係數設為50×10-7/℃以上且未滿75×10-7/℃時，玻璃基板較佳為：作為玻璃組成，以質量%計而含有55%~70%的SiO2、3%~15%的Al2O3、5%~20%的B2O3、0%~5%的MgO、0%~10%的CaO、0%~5%的SrO、0%~5%的BaO、0%~5%的ZnO、5%~15%的Na2O、0%~10%的K2O。於將30℃~380℃的溫度範圍下的平均熱膨脹係數設為75×10-7/℃以上且85×10-7/℃以下時，玻璃基板較佳為：作為玻璃組成，以質量%計而含有60%~75%的SiO2、5%~15%的Al2O3、5%~20%的B2O3、0%~5%的MgO、0%~10%的CaO、0%~5%的SrO、0%~5%的BaO、0%~5%的ZnO、7%~16%的Na2O、0%~8%的K2O。於將30℃~380℃的溫度範圍下的平均熱膨脹係數設為超過85×10-7/℃且120×10-7/℃以下時，玻璃基板較佳為：作為玻璃組成，以質量%計而含有55%~70%的SiO2、3%~13%的Al2O3、2%~8%的B2O3、0%~5%的MgO、0%~10%的CaO、0%~5%的SrO、0%~5%的BaO、0%~5%的ZnO、10%~21%的Na2O、0%~5%的K2O。於將30℃~380℃的溫度範圍下的平均熱膨脹係數設為超過120×10-7/℃且165×10-7/℃以下時，玻璃 基板較佳為：作為玻璃組成，以質量%計而含有53%~65%的SiO2、3%~13%的Al2O3、0%~5%的B2O3、0.1%~6%的MgO、0%~10%的CaO、0%~5%的SrO、0%~5%的BaO、0%~5%的ZnO、20%~40%的Na2O+K2O、12%~21%的Na2O、7%~21%的K2O。如此，容易將熱膨脹係數控制在所期望的範圍，且耐失透性提高，故容易形成整體板厚偏差小的玻璃基板。 When the average thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C is 0 × 10 -7 / ° C or more and less than 50 × 10 -7 / ° C, the glass substrate is preferably: as a glass composition, in mass% It contains 55% ~ 75% SiO 2 , 15% ~ 30% Al 2 O 3 , 0.1% ~ 6% Li 2 O, 0% ~ 8% Na 2 O + K 2 O, 0% ~ 10% MgO + CaO + SrO + BaO, or preferably 55% to 75% SiO 2 , 10% to 30% Al 2 O 3 , 0% to 0.3% Li 2 O + Na 2 O + K 2 O, 5% ~ 20% MgO + CaO + SrO + BaO. When the average thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is 50 × 10 -7 / ° C or more and less than 75 × 10 -7 / ° C, the glass substrate is preferably: as a glass composition, in mass% It contains 55% ~ 70% SiO 2 , 3% ~ 15% Al 2 O 3 , 5% ~ 20% B 2 O 3 , 0% ~ 5% MgO, 0% ~ 10% CaO, 0% ~ 5% SrO, 0% ~ 5% BaO, 0% ~ 5% ZnO, 5% ~ 15% Na 2 O, 0% ~ 10% K 2 O. When the average thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C is set to be 75 × 10 -7 / ° C or more and 85 × 10 -7 / ° C or less, the glass substrate is preferably as a glass composition in terms of mass% It contains 60% to 75% SiO 2 , 5% to 15% Al 2 O 3 , 5% to 20% B 2 O 3 , 0% to 5% MgO, 0% to 10% CaO, 0 % To 5% SrO, 0% to 5% BaO, 0% to 5% ZnO, 7% to 16% Na 2 O, and 0% to 8% K 2 O. When the average thermal expansion coefficient in the temperature range of 30 ° C to 380 ° C is more than 85 × 10 -7 / ° C and 120 × 10 -7 / ° C or less, the glass substrate is preferably: as a glass composition, in terms of mass% It contains 55% ~ 70% SiO 2 , 3% ~ 13% Al 2 O 3 , 2% ~ 8% B 2 O 3 , 0% ~ 5% MgO, 0% ~ 10% CaO, 0 % ~ 5% SrO, 0% ~ 5% BaO, 0% ~ 5% ZnO, 10% ~ 21% Na 2 O, 0% ~ 5% K 2 O. When the average thermal expansion coefficient in a temperature range of 30 ° C to 380 ° C is more than 120 × 10 -7 / ° C and 165 × 10 -7 / ° C or less, the glass substrate is preferably as a glass composition in terms of mass% It contains 53% to 65% SiO 2 , 3% to 13% Al 2 O 3 , 0% to 5% B 2 O 3 , 0.1% to 6% MgO, 0% to 10% CaO, 0 % ~ 5% SrO, 0% ~ 5% BaO, 0% ~ 5% ZnO, 20% ~ 40% Na 2 O + K 2 O, 12% ~ 21% Na 2 O, 7% ~ 21% K 2 O. In this way, it is easy to control the thermal expansion coefficient to a desired range, and the devitrification resistance is improved, so that it is easy to form a glass substrate with a small variation in overall thickness.

楊氏模量較佳為65GPa以上、67GPa以上、68GPa以上、69GPa以上、70GPa以上、71GPa以上、72GPa以上、特別是73GPa以上。若楊氏模量過低，則難以維持積層體的剛性，且容易產生加工基板的變形、翹曲、破損。 The Young's modulus is preferably 65 GPa or more, 67 GPa or more, 68 GPa or more, 69 GPa or more, 70 GPa or more, 71 GPa or more, 72 GPa or more, and especially 73 GPa or more. When the Young's modulus is too low, it is difficult to maintain the rigidity of the laminated body, and deformation, warpage, and damage to the processed substrate are liable to occur.

液相溫度較佳為未滿1150℃、1120℃以下、1100℃以下、1080℃以下、1050℃以下、1010℃以下、980℃以下、960℃以下、950℃以下、特別是940℃以下。如此，容易利用下拉法、特別是溢流下拉法將玻璃原板成形，故容易製作板厚小的玻璃基板，且可減小成形後的板厚偏差。進而，於玻璃基板的製造步驟時，容易防止產生失透結晶，玻璃基板的生產性下降的事態。此處，「液相溫度」能夠藉由將通過標準篩30目(500μm)而殘留於50目(300μm)的玻璃粉末裝入鉑舟後，於溫度梯度爐中保持24小時，並測定結晶析出的溫度而算出。 The liquidus temperature is preferably less than 1150 ° C, 1120 ° C or lower, 1100 ° C or lower, 1080 ° C or lower, 1050 ° C or lower, 1010 ° C or lower, 980 ° C or lower, 960 ° C or lower, or 950 ° C or lower, especially 940 ° C or lower. In this way, it is easy to shape the original glass plate by the down-draw method, especially the overflow down-draw method, so it is easy to produce a glass substrate with a small plate thickness, and the plate thickness deviation after forming can be reduced. Furthermore, in the manufacturing process of a glass substrate, it is easy to prevent a situation where devitrification crystal | crystallization arises and productivity of a glass substrate falls. Here, the "liquid phase temperature" can be obtained by putting glass powder which passed through a standard sieve 30 mesh (500 μm) and remaining in 50 mesh (300 μm) into a platinum boat, and then holding it in a temperature gradient furnace for 24 hours to measure crystal precipitation Temperature.

液相黏度較佳為104.6dPa．s以上、105.0dPa．s以上、105.2dPa．s以上、105.4dPa．s以上、105.6dPa．s以上、特別是105.8dPa．s以上。如此，容易利用下拉法、特別是溢流下拉法將玻璃原板成 形，故容易製作板厚小的玻璃基板，且可減小成形後的板厚偏差。進而，於玻璃基板的製造步驟時，容易防止產生失透結晶，玻璃基板的生產性下降的事態。此處，「液相黏度」能夠利用鉑球提拉法測定。另外，液相黏度為成形性的指標，液相黏度越高，成形性越提高。 The liquid viscosity is preferably 10 4.6 dPa. s or more, 10 5.0 dPa. Above s, 10 5.2 dPa. Above s, 10 5.4 dPa. above s, 10 5.6 dPa. s above, especially 10 5.8 dPa. s or more. In this way, it is easy to shape the original glass plate by the down-draw method, especially the overflow down-draw method, so it is easy to produce a glass substrate with a small plate thickness, and the plate thickness deviation after forming can be reduced. Furthermore, in the manufacturing process of a glass substrate, it is easy to prevent a situation where devitrification crystal | crystallization arises and productivity of a glass substrate falls. Here, the "liquid phase viscosity" can be measured by a platinum ball pulling method. In addition, the liquid phase viscosity is an index of moldability, and the higher the liquid phase viscosity, the higher the moldability.

102.5dPa．s下的溫度較佳為1580℃以下、1500℃以下、1450℃以下、1400℃以下、1350℃以下、特別是1200℃~1300℃。若102.5dPa．s下的溫度變高，則熔融性下降，玻璃基板的製造成本上漲。此處，「102.5dPa．s下的溫度」能夠利用鉑球提拉法測定。另外，102.5dPa．s下的溫度相當於熔融溫度，該溫度越低，熔融性越提高。 10 2.5 dPa. The temperature at s is preferably 1580 ° C or lower, 1500 ° C or lower, 1450 ° C or lower, 1400 ° C or lower, 1350 ° C or lower, and particularly 1200 ° C to 1300 ° C. If 10 2.5 dPa. As the temperature at s becomes higher, the meltability decreases, and the manufacturing cost of the glass substrate increases. Here, the "temperature at 10 2.5 dPa · s" can be measured by a platinum ball pulling method. In addition, 10 2.5 dPa. The temperature at s corresponds to the melting temperature, and the lower the temperature, the higher the meltability.

本發明的玻璃基板較佳為利用下拉法、特別是溢流下拉法進行成形。溢流下拉法為使熔融玻璃自耐熱性的槽狀結構物的兩側溢出，一面使溢出的熔融玻璃於槽狀結構物的下頂端匯合，一面向下方延伸成形而製造玻璃原板的方法。溢流下拉法中，應成為玻璃基板的表面的面不與槽狀耐火物接觸，而是以自由表面的狀態成形。因此容易製作板厚小的玻璃基板，且即便不對表面進行研磨，亦可減小板厚偏差。或者，藉由少量的研磨，可將整體板厚偏差減小至未滿2.0μm，特別是未滿1.0μm。結果可使玻璃基板的製造成本低廉化。 The glass substrate of the present invention is preferably formed by a down-draw method, particularly an overflow down-draw method. The overflow down-draw method is a method of manufacturing a glass original plate by allowing molten glass to overflow from both sides of a heat-resistant groove-like structure, while merging the overflowing molten glass at the lower end of the groove-like structure, and extending downward. In the overflow down-draw method, the surface that should be the surface of the glass substrate does not contact the groove-shaped refractory, but is formed in a free surface state. Therefore, it is easy to produce a glass substrate with a small plate thickness, and even if the surface is not polished, the plate thickness deviation can be reduced. Alternatively, by a small amount of polishing, the variation in overall plate thickness can be reduced to less than 2.0 μm, particularly less than 1.0 μm. As a result, the manufacturing cost of a glass substrate can be reduced.

玻璃基板的成形方法除溢流下拉法以外，亦可選定例如流孔下引法(slot down draw method)、再拉法、浮式法等。 The glass substrate may be formed by a method other than the overflow down-draw method, for example, a slot down draw method, a redraw method, and a float method.

本發明的玻璃基板較佳為在藉由溢流下拉法成形後對表面進行研磨。如此，容易將板厚偏差控制在2μm以下、1μm以下、特別是未滿1μm。 The glass substrate of the present invention preferably has a surface polished after being formed by an overflow down-draw method. In this way, it is easy to control the plate thickness deviation to be 2 μm or less, 1 μm or less, and particularly less than 1 μm.

本發明的玻璃基板較佳為不進行離子交換處理，且較佳為在表面不具有壓縮應力層。若進行離子交換處理，則玻璃基板的製造成本上漲。進而，若進行離子交換處理，則難以減小玻璃基板的整體板厚偏差。另外，本發明的玻璃基板並不排除進行離子交換處理並在表面形成壓縮應力層的態樣。若自提高機械性強度的觀點來說，較佳為進行離子交換處理並在表面形成壓縮應力層。 The glass substrate of the present invention is preferably not subjected to ion exchange treatment, and preferably does not have a compressive stress layer on the surface. When an ion exchange process is performed, the manufacturing cost of a glass substrate will increase. Furthermore, if an ion exchange process is performed, it will become difficult to reduce the variation in the overall thickness of the glass substrate. In addition, the glass substrate of the present invention does not exclude a state where an ion exchange treatment is performed and a compressive stress layer is formed on the surface. From the viewpoint of improving the mechanical strength, it is preferable to perform an ion exchange treatment and form a compressive stress layer on the surface.

本發明的玻璃基板的較佳的製造方法的特徵在於包括：(1)將玻璃原板切斷而獲得玻璃基板的步驟；(2)以玻璃基板的整體板厚偏差未滿2.0μm的方式對玻璃基板的表面進行研磨的步驟；以及(3)藉由利用雷射照射的熱衝擊來形成自玻璃基板的內部向表層延伸的裂紋，藉此形成包括多個點的資訊辨別部的步驟。此處，本發明的玻璃基板的製造方法的技術性特徵(較佳構成、效果)與本發明的玻璃基板的技術性特徵重複。因而，本說明書中對於該重複部分省略詳細記載。 A preferred method for manufacturing a glass substrate of the present invention is characterized by comprising: (1) a step of cutting a glass original plate to obtain a glass substrate; and (2) applying a method to the glass in such a manner that the deviation of the overall thickness of the glass substrate is less than 2.0 μm A step of polishing the surface of the substrate; and (3) a step of forming a crack extending from the inside of the glass substrate to the surface layer by using thermal shock of laser irradiation, thereby forming an information discriminating section including a plurality of points. Here, the technical features (preferred structure and effect) of the method for manufacturing a glass substrate of the present invention overlap with those of the glass substrate of the present invention. Therefore, detailed descriptions of the overlapping portions are omitted in this specification.

所述玻璃基板的製造方法包括將玻璃原板切斷而獲得玻璃基板的步驟。將玻璃原板切斷的方法可選定各種方法。例如能夠利用：藉由雷射照射時的熱衝擊而切斷的方法、劃線後進行折斷分割的方法。 The method for manufacturing a glass substrate includes a step of cutting a glass substrate to obtain a glass substrate. Various methods can be selected as the method of cutting a glass original plate. For example, a method of cutting by thermal shock at the time of laser irradiation, or a method of breaking and dividing after scribing can be used.

所述玻璃基板的製造方法較佳為包括將玻璃原板切斷而獲得玻璃基板後對玻璃基板進行退火的步驟。就減小玻璃基板的翹曲量的觀點而言，退火溫度較佳為設為玻璃基板的軟化點以上，退火溫度下的保持時間較佳為設為30分鐘以上。另外，退火可藉由電爐等熱處理爐來進行。 The manufacturing method of the glass substrate preferably includes a step of annealing the glass substrate after the glass substrate is cut to obtain the glass substrate. From the viewpoint of reducing the amount of warpage of the glass substrate, the annealing temperature is preferably set to be equal to or higher than the softening point of the glass substrate, and the holding time at the annealing temperature is set to be equal to or longer than 30 minutes. The annealing can be performed in a heat treatment furnace such as an electric furnace.

所述玻璃基板的製造方法包括以玻璃基板的整體板厚偏差未滿2.0μm的方式對玻璃基板的表面進行研磨的步驟，但該步驟的較佳態樣如上所述。 The manufacturing method of the glass substrate includes a step of polishing the surface of the glass substrate such that the deviation of the entire thickness of the glass substrate is less than 2.0 μm, but the preferred aspect of this step is as described above.

所述玻璃基板的製造方法包括藉由利用雷射照射的熱衝擊來形成自玻璃基板的內部向表層延伸的裂紋，藉此形成包括多個點的資訊辨別部的步驟，但該步驟的較佳態樣如上所述。 The manufacturing method of the glass substrate includes a step of forming a crack extending from the inside of the glass substrate to the surface layer by utilizing thermal shock of laser irradiation, thereby forming an information discriminating section including a plurality of points, but this step is preferably The appearance is as described above.

本發明的積層體至少具備加工基板及用於支撐加工基板的玻璃基板，其特徵在於：玻璃基板為所述玻璃基板。此處，本發明的積層體的技術性特徵(較佳構成、效果)與本發明的玻璃基板的技術性特徵重複。因而，本說明書中對於該重複部分省略詳細記載。 The laminated body of the present invention includes at least a processing substrate and a glass substrate for supporting the processing substrate, and the glass substrate is the glass substrate. Here, the technical features (preferred structure and effects) of the laminated body of the present invention overlap with those of the glass substrate of the present invention. Therefore, detailed descriptions of the overlapping portions are omitted in this specification.

本發明的積層體較佳為於加工基板與玻璃基板之間具有接著層。接著層較佳為樹脂，且較佳為例如熱硬化性樹脂、光硬化性樹脂(特別是紫外線硬化樹脂)等。並且較佳為具有可耐受半導體封裝體的製造步驟中的熱處理的耐熱性。藉此半導體封裝體的製造步驟中接著層難以熔解，可提高加工處理的精度。另外，為了容易地將加工基板與玻璃基板固定，亦可使用紫外線硬 化型膠帶作為接著層。 The laminated body of the present invention preferably has an adhesive layer between the processing substrate and the glass substrate. The adhesive layer is preferably a resin, and is preferably, for example, a thermosetting resin, a photocurable resin (particularly, an ultraviolet curable resin), and the like. In addition, it is preferable to have heat resistance that can withstand the heat treatment in the manufacturing steps of the semiconductor package. This makes it difficult to melt the bonding layer in the manufacturing step of the semiconductor package, which can improve the accuracy of processing. In addition, in order to easily fix the processing substrate and the glass substrate, ultraviolet hardening may be used. The adhesive tape is used as an adhesive layer.

本發明的積層體較佳為進而於加工基板與玻璃基板之間，更具體而言於加工基板與接著層之間具有剝離層。如此，對加工基板進行特定的加工處理後，容易將加工基板自玻璃基板剝離。就生產性的觀點而言，較佳為藉由雷射光等照射光進行加工基板的剝離。作為雷射光源，可使用YAG雷射(波長1064nm)、半導體雷射(波長780nm~1300nm)等紅外光雷射光源。並且，於剝離層中可使用藉由照射紅外線雷射而分解的樹脂。並且，亦可向樹脂中添加高效地吸收紅外線並轉換成熱的物質。例如，亦可向樹脂中添加碳黑、石墨粉、微粒子金屬粉末、染料、顏料等。 The laminated body of the present invention preferably further has a release layer between the processing substrate and the glass substrate, and more specifically, between the processing substrate and the adhesive layer. In this way, after the processing substrate is subjected to a specific processing treatment, the processing substrate is easily peeled from the glass substrate. From the viewpoint of productivity, it is preferred that the processed substrate is detached by irradiation light such as laser light. As the laser light source, infrared laser light sources such as YAG laser (wavelength 1064nm) and semiconductor laser (wavelength 780nm to 1300nm) can be used. In addition, a resin that is decomposed by irradiation with infrared laser can be used for the release layer. Furthermore, a substance that efficiently absorbs infrared rays and converts them into heat may be added to the resin. For example, carbon black, graphite powder, fine metal powder, dye, pigment, etc. may be added to the resin.

剝離層包括藉由雷射光等照射光而產生「層內剝離」或「界面剝離」的材料。即包括以下材料：若照射一定強度的光，則原子或分子中的原子間或分子間的結合力消失或減少，發生剝蝕(ablation)等，從而產生剝離的材料。另外，有藉由照射光的照射，剝離層中所含有的成分成為氣體被放出而導致分離的情況、與剝離層吸收光成為氣體並放出其蒸氣而導致分離的情況。 The release layer includes a material that causes "in-layer peeling" or "interface peeling" by irradiating light such as laser light. That is to say, the following materials are included: materials that are irradiated with light of a certain intensity, the bonding force between atoms or molecules in an atom or a molecule disappears or decreases, and ablation occurs, thereby causing separation. In addition, there is a case where the components contained in the peeling layer are released as a gas to be separated by the irradiation of the irradiation light, and a case where the peeling layer absorbs light to be a gas and emits a vapor to cause separation.

本發明的積層體中，玻璃基板較佳為比加工基板大。藉此於支撐加工基板與玻璃基板時兩者的中心位置稍有分離的情況下，加工基板的邊緣部亦難以超出玻璃基板。 In the laminated body of the present invention, the glass substrate is preferably larger than the processing substrate. Therefore, when the center positions of the processing substrate and the glass substrate are slightly separated, it is difficult for the edge portion of the processing substrate to extend beyond the glass substrate.

使用本發明的玻璃基板的半導體封裝體的製造方法包括：準備至少具備加工基板及用於支撐加工基板的玻璃基板的積層體的步驟。至少具備加工基板及用於支撐加工基板的玻璃基板 的積層體具有所述材料構成。另外，作為玻璃基板的成形方法，可選定所述成形方法。 A method for manufacturing a semiconductor package using the glass substrate of the present invention includes a step of preparing a laminated body including at least a processing substrate and a glass substrate for supporting the processing substrate. At least a processing substrate and a glass substrate for supporting the processing substrate The laminated body has the material composition. In addition, as the method for forming the glass substrate, the above-mentioned forming method can be selected.

所述半導體封裝體的製造方法較佳為進而包括搬送積層體的步驟。藉此，可提高加工處理的處理效率。另外，「搬送積層體的步驟」與「對加工基板進行加工處理的步驟」，無須分別進行，可同時進行。 It is preferable that the manufacturing method of the said semiconductor package further includes the process of conveying a laminated body. Thereby, the processing efficiency of a processing process can be improved. In addition, "the step of conveying a laminated body" and "the step of processing a processed substrate" need not be performed separately, and can be performed simultaneously.

所述半導體封裝體的製造方法中，加工處理較佳為對加工基板的一個表面進行配線的處理、或於加工基板的一個表面形成焊料凸塊的處理。所述半導體封裝體的製造方法中，於該些處理時，加工基板的尺寸難以變化，故可適當地進行該些步驟。 In the method for manufacturing a semiconductor package, the processing process is preferably a process of wiring one surface of the processed substrate or a process of forming a solder bump on one surface of the processed substrate. In the method for manufacturing a semiconductor package, during these processes, the size of the processed substrate is difficult to change, so these steps can be appropriately performed.

除所述以外，作為加工處理亦可為以下處理的任一個：對加工基板的一個表面(通常與玻璃基板為相反側的表面)以機械方式進行研磨的處理、對加工基板的一個表面(通常與玻璃基板為相反側的表面)進行乾式蝕刻的處理、對加工基板的一個表面(通常與玻璃基板為相反側的表面)進行濕式蝕刻的處理。另外，本發明的半導體封裝體的製造方法中，加工基板難以產生翹曲，且可維持積層體的剛性。結果可適當地進行所述加工處理。 In addition to the above, the processing may be any of the following processes: a process for mechanically polishing one surface of a processed substrate (usually the surface opposite to the glass substrate), and one surface of the processed substrate (normally A process of performing dry etching on a surface opposite to the glass substrate), and a process of performing wet etching on one surface of the processed substrate (normally, a surface on the opposite side to the glass substrate). Moreover, in the manufacturing method of the semiconductor package of this invention, it is hard to generate | occur | produce a curvature in a processing board | substrate, and the rigidity of a laminated body can be maintained. As a result, the processing can be appropriately performed.

一面參照圖式一面對本發明進一步說明。 The present invention will be further described with reference to the drawings.

圖1為表示本發明的積層體1的一例的概念立體圖。圖1中，積層體1具備玻璃基板10與加工基板11。為了防止加工基板11的尺寸變化，特別是翹曲變形，將玻璃基板10貼附於加工基板11。於玻璃基板10與加工基板11之間配置有剝離層12與接 著層13。剝離層12與玻璃基板10接觸，接著層13與加工基板11接觸。 FIG. 1 is a conceptual perspective view showing an example of a laminated body 1 according to the present invention. In FIG. 1, the laminated body 1 includes a glass substrate 10 and a processing substrate 11. In order to prevent the dimensional change of the processing substrate 11, particularly warpage deformation, the glass substrate 10 is attached to the processing substrate 11. Between the glass substrate 10 and the processing substrate 11, a release layer 12 and a contact 着 层 13。 Layer 13. The release layer 12 is in contact with the glass substrate 10, and the subsequent layer 13 is in contact with the processing substrate 11.

由圖1所知，積層體1以玻璃基板10、剝離層12、接著層13、加工基板11的順序積層配置。玻璃基板10的形狀根據加工基板11而決定，但圖1中玻璃基板10及加工基板11的形狀均為大致圓板形狀。剝離層12例如可使用藉由照射雷射而分解的樹脂。並且，亦可向樹脂中添加高效地吸收雷射光並轉換成熱的物質。例如為碳黑、石墨粉、微粒子金屬粉末、染料、顏料等。剝離層12藉由電漿化學氣相沈積法(Chemical vapor deposition，CVD)、溶膠-凝膠法的旋塗等而形成。接著層13包括樹脂，例如藉由各種印刷法、噴墨法、旋塗法、輥塗法等塗佈形成。並且，亦能夠使用紫外線硬化型膠帶。接著層13藉由剝離層12將玻璃基板10自加工基板11剝離後，利用溶劑等加以溶解去除。紫外線硬化型膠帶於照射紫外線後，能夠藉由剝離用膠帶來去除。 As is known from FIG. 1, the laminated body 1 is arranged in the order of a glass substrate 10, a release layer 12, an adhesive layer 13, and a processed substrate 11. The shape of the glass substrate 10 is determined based on the processed substrate 11. However, the shapes of the glass substrate 10 and the processed substrate 11 in FIG. 1 are both approximately circular plate shapes. As the release layer 12, for example, a resin that is decomposed by irradiation with a laser can be used. Furthermore, a substance that efficiently absorbs laser light and converts it into heat may be added to the resin. Examples include carbon black, graphite powder, fine metal powder, dyes, and pigments. The release layer 12 is formed by a plasma chemical vapor deposition (CVD) method, spin coating by a sol-gel method, or the like. The adhesive layer 13 includes a resin, and is formed by, for example, coating by various printing methods, inkjet methods, spin coating methods, roll coating methods, and the like. In addition, an ultraviolet curable tape can also be used. In the subsequent layer 13, the glass substrate 10 is separated from the processing substrate 11 by the release layer 12, and then dissolved and removed with a solvent or the like. The ultraviolet-curable tape can be removed with a peeling tape after being irradiated with ultraviolet rays.

圖2(a)~圖2(g)是表示扇出型WLP的製造步驟的概念剖面圖。圖2(a)表示在支撐構件20的一個表面上形成接著層21的狀態。亦可視需要在支撐構件20與接著層21之間形成剝離層。繼而，如圖2(b)所示，於接著層21之上貼附多個半導體晶片22。此時，使半導體晶片22的主動側的面與接著層21接觸。繼而，如圖2(c)所示，利用樹脂的密封材23使半導體晶片22成型。密封材23使用壓縮成形後的尺寸變化、將配線成形時的尺寸變化少的材料。接著，如圖2(d)、圖2(e)所示，將半導體 晶片22經成型的加工基板24自支撐構件20分離後，經由接著層25而與玻璃基板26接著固定。此時，將加工基板24的表面內的與埋入半導體晶片22側的表面為相反側的表面配置於玻璃基板26側。如此可獲得積層體27。另外，亦可視需要於接著層25與玻璃基板26之間形成剝離層。進而搬送所獲得的積層體27後，如圖2(f)所示，於加工基板24的埋入半導體晶片22側的表面形成配線28後，形成多個焊料凸塊29。最後自玻璃基板26分離加工基板24後，針對每個半導體晶片22將加工基板24切斷，供於之後的封裝步驟(圖2(g))。 2 (a) to 2 (g) are conceptual cross-sectional views showing manufacturing steps of a fan-out WLP. FIG. 2 (a) shows a state where the adhesive layer 21 is formed on one surface of the support member 20. Optionally, a release layer may be formed between the support member 20 and the adhesive layer 21. Then, as shown in FIG. 2 (b), a plurality of semiconductor wafers 22 are attached on the adhesive layer 21. At this time, the active-side surface of the semiconductor wafer 22 is brought into contact with the adhesive layer 21. Next, as shown in FIG. 2 (c), the semiconductor wafer 22 is molded by a resin sealing material 23. As the sealing material 23, a material having a small dimensional change after compression molding and a small dimensional change when forming wiring is used. Next, as shown in FIGS. 2 (d) and 2 (e), the semiconductor After the wafer 22 is separated from the support member 20 through the molded processing substrate 24, it is then fixed to the glass substrate 26 via the bonding layer 25. At this time, the surface of the processing substrate 24 opposite to the surface on the side of the embedded semiconductor wafer 22 is disposed on the glass substrate 26 side. In this way, a laminated body 27 can be obtained. In addition, if necessary, a release layer may be formed between the adhesive layer 25 and the glass substrate 26. After the obtained laminated body 27 is further transported, as shown in FIG. 2 (f), after wiring 28 is formed on the surface of the processing substrate 24 on the side of the embedded semiconductor wafer 22, a plurality of solder bumps 29 are formed. Finally, after the processing substrate 24 is separated from the glass substrate 26, the processing substrate 24 is cut for each semiconductor wafer 22 and used for the subsequent packaging step (FIG. 2 (g)).

[實施例1] [Example 1]

以下基於實施例對本發明加以說明。另外，以下的實施例僅為例示。本發明並不受以下實施例的任何限定。 Hereinafter, the present invention will be described based on examples. The following examples are merely examples. The present invention is not limited in any way by the following examples.

以如下方式，即作為玻璃組成，以質量%計成為65.2%的SiO2、8%的Al2O3、10.5%的B2O3、11.5%的Na2O、3.4%的CaO、1%的ZnO、0.3%的SnO2、0.1%的Sb2O3的方式調配玻璃原料後，投入至玻璃熔融爐並於1500℃~1600℃下進行熔融，繼而將熔融玻璃供給至溢流下拉成形裝置，以板厚成為0.7mm的方式進行成形。 In the following manner, as a glass composition, 65.2% of SiO 2 , 8% of Al 2 O 3 , 10.5% of B 2 O 3 , 11.5% of Na 2 O, 3.4% of CaO, and 1% in terms of mass%. ZnO, 0.3% SnO 2 , and 0.1% Sb 2 O 3 are prepared as glass raw materials, and then charged into a glass melting furnace and melted at 1500 ° C to 1600 ° C, and then the molten glass is supplied to an overflow down-draw forming device. It was formed so that plate | board thickness might become 0.7 mm.

繼而，將所獲得的玻璃原板沖裁成晶圓形狀，獲得玻璃基板，並且利用研磨裝置對該玻璃基板的表面進行研磨處理，藉此減小玻璃基板的整體板厚偏差。具體而言，以外徑不同的一對研磨墊夾持玻璃基板的兩表面，一面使玻璃基板與一對研磨墊一 同旋轉，一面對玻璃基板的兩表面進行研磨處理。研磨處理時，有時以玻璃基板的一部分超出研磨墊的方式進行控制。另外，研磨墊為胺基甲酸酯製，研磨處理時所使用的研磨漿料的平均粒徑為2.5μm，研磨速度為15m/min。 Then, the obtained glass original plate is punched into a wafer shape to obtain a glass substrate, and the surface of the glass substrate is polished by a polishing device, thereby reducing the variation in overall plate thickness of the glass substrate. Specifically, both surfaces of the glass substrate are sandwiched between a pair of polishing pads having different outer diameters, while the glass substrate and the pair of polishing pads are held together. With the same rotation, the two surfaces facing the glass substrate are polished. During the polishing process, control may be performed so that a part of the glass substrate exceeds the polishing pad. In addition, the polishing pad was made of urethane, and the average particle diameter of the polishing slurry used in the polishing treatment was 2.5 μm, and the polishing rate was 15 m / min.

接著，對玻璃基板的深度30μm的地點照射波長349μm的半導體雷射(雷射輸出：50mW，脈衝寬度：數ns)，藉由熱衝擊來將包含多個點的資訊辨別部形成於玻璃基板的表面。此處，將點的中心間隔設為25μm，將點的直徑設為3μm，點由自內部延伸至表層的裂紋構成。圖3是表示該資訊辨別部的顯微鏡照片，照片內的黑點為點。另外，該資訊辨別部能夠藉由CCD相機等光學元件來辨別，且未確認到連結點之間的裂紋的產生。 Next, a semiconductor laser having a wavelength of 349 μm (laser output: 50 mW, pulse width: several ns) was irradiated to a place having a depth of 30 μm on the glass substrate, and an information discriminating portion including a plurality of points was formed on the glass substrate by thermal shock surface. Here, the center interval of the dots was set to 25 μm, the diameter of the dots was set to 3 μm, and the dots consisted of cracks extending from the inside to the surface layer. FIG. 3 is a microscope photograph showing the information discriminating section, and the black dots in the photograph are dots. In addition, the information discriminating unit can discriminate by an optical element such as a CCD camera, and the occurrence of cracks between the connection points has not been confirmed.

最後，關於所獲得的玻璃基板，對整體板厚偏差與翹曲量進行測定，結果整體板厚偏差為0.55μm，翹曲量為30μm。 Finally, as for the obtained glass substrate, the overall plate thickness deviation and the amount of warpage were measured. As a result, the entire plate thickness deviation was 0.55 μm, and the amount of warpage was 30 μm.

[實施例2] [Example 2]

首先，以成為表1所記載的試樣No.1~試樣No.7的玻璃組成的方式調配玻璃原料後，投入至玻璃熔融爐並於1500℃~1600℃下進行熔融，繼而將熔融玻璃供給至溢流下拉成形裝置中，以板厚成為0.8mm的方式分別成形。繼而，利用與[實施例1]相同的條件，將玻璃原板沖裁成晶圓形狀後，利用研磨裝置對所獲得的玻璃基板的表面進行研磨處理，藉此減小玻璃基板的整體板厚偏差，進而藉由半導體雷射來將資訊辨別部形成於玻璃基板。關於所獲得的各玻璃基板，評價30℃~380℃的溫度範圍下的 平均熱膨脹係數α30~380、密度ρ、應變點Ps、退火點Ta、軟化點Ts、高溫黏度104.0dPa．s下的溫度、高溫黏度103.0dPa．s下的溫度、高溫黏度102.5dPa．s下的溫度、高溫黏度102.0dPa．s下的溫度、液相溫度TL及楊氏模量E。另外，關於切斷後的各玻璃基板，對整體板厚偏差與翹曲量進行測定，結果整體板厚偏差分別為3μm，翹曲量分別為70μm，但關於形成資訊辨別部後的各玻璃基板，對整體板厚偏差與翹曲量進行測定，結果整體板厚偏差分別為0.45μm，翹曲量分別為35μm。 First, a glass raw material is prepared so that it may become the glass composition of the sample No. 1-sample No. 7 described in Table 1, and it is put into a glass melting furnace and melted at 1500 ° C to 1600 ° C, and then the molten glass is It was supplied to the overflow down-draw forming apparatus, and each was shape | molded so that plate | board thickness might become 0.8 mm. Then, using the same conditions as in [Example 1], the glass substrate was punched into a wafer shape, and then the surface of the obtained glass substrate was polished with a polishing device, thereby reducing the variation in overall thickness of the glass substrate. Then, the information discrimination portion is formed on a glass substrate by a semiconductor laser. For each of the obtained glass substrates, the average thermal expansion coefficient α 30 to 380 , the density ρ, the strain point Ps, the annealing point Ta, the softening point Ts, and the high temperature viscosity 10 4.0 dPa were evaluated in a temperature range of 30 ° C to 380 ° C. Temperature at s, high temperature viscosity 10 3.0 dPa. Temperature at s, high temperature viscosity 10 2.5 dPa. Temperature at s, high temperature viscosity 10 2.0 dPa. Temperature at s, liquidus temperature TL and Young's modulus E. In addition, for each glass substrate after cutting, the overall plate thickness deviation and warpage were measured. As a result, the overall plate thickness deviation was 3 μm and the warpage was 70 μm. However, for each glass substrate after forming the information discriminating section, The overall plate thickness deviation and the amount of warpage were measured. As a result, the overall plate thickness deviation was 0.45 μm, and the amount of warpage was 35 μm, respectively.

30℃~380℃的溫度範圍下的平均熱膨脹係數α30~380為利用膨脹計進行測定而得的值。 The average thermal expansion coefficient α 30 to 380 in a temperature range of 30 ° C to 380 ° C is a value obtained by measuring with a dilatometer.

密度ρ為藉由周知的阿基米德(Archimedes)法進行測定而得的值。 The density ρ is a value measured by a well-known Archimedes method.

應變點Ps、退火點Ta、軟化點Ts為基於ASTM C336的方法進行測定而得的值。 The strain point Ps, the annealing point Ta, and the softening point Ts are values obtained by measuring based on the method of ASTM C336.

高溫黏度104.0dPa．s、高溫黏度103.0dPa．s、高溫黏度102.5dPa．s下的溫度為藉由鉑球提拉法進行測定而得的值。 High temperature viscosity 10 4.0 dPa. s, high temperature viscosity 10 3.0 dPa. s, high temperature viscosity 10 2.5 dPa. The temperature at s is a value measured by a platinum ball pulling method.

液相溫度TL為將通過標準篩30目(500μm)而殘留於50目(300μm)的玻璃粉末裝入鉑舟，於溫度梯度爐中保持24小時後，藉由顯微鏡觀察而對結晶析出的溫度進行測定而得的值。 The liquidus temperature TL is a temperature at which glass powder which passed through a standard sieve of 30 mesh (500 μm) and remained at 50 mesh (300 μm) was loaded into a platinum boat and held in a temperature gradient furnace for 24 hours, and then crystals were observed by a microscope to precipitate The value obtained by measurement.

楊氏模量E是指藉由共振法進行測定而得的值。 The Young's modulus E is a value measured by a resonance method.

Claims (12)

一種玻璃基板，其特徵在於：整體板厚偏差未滿2.0μm，且具有包含多個點的資訊辨別部，所述點是藉由利用雷射照射的熱衝擊來形成，且所述點是由自內部向表層延伸的深度為5μm~70μm的裂紋形成。A glass substrate, characterized in that the overall plate thickness deviation is less than 2.0 μm, and has an information discriminating section including a plurality of points, the points are formed by thermal shock using laser irradiation, and the points are formed by A crack extending from the inside to the surface layer with a depth of 5 μm to 70 μm was formed. 如申請專利範圍第1項所述的玻璃基板，其中相鄰點的中心間隔為100μm以下。The glass substrate according to item 1 of the scope of patent application, wherein the center interval between adjacent points is 100 μm or less. 如申請專利範圍第1項或第2項所述的玻璃基板，其中所述點的直徑為0.5μm~10μm。The glass substrate according to item 1 or item 2 of the patent application scope, wherein the diameter of the dots is 0.5 μm to 10 μm. 如申請專利範圍第1項或第2項所述的玻璃基板，其中於所述資訊辨別部輸入玻璃基板的製造公司名、玻璃基板的材質、玻璃基板的熱膨脹係數、玻璃基板的外徑、玻璃基板的板厚、玻璃基板的整體板厚偏差、玻璃基板的製造年月日、玻璃基板的出貨年月日、玻璃基板的序號中的一種或兩種以上的資訊。The glass substrate according to item 1 or 2 of the scope of patent application, wherein the name of the manufacturing company of the glass substrate, the material of the glass substrate, the coefficient of thermal expansion of the glass substrate, the outer diameter of the glass substrate, and the glass are entered in the information discrimination section. One or two or more pieces of information about the thickness of the substrate, the overall thickness deviation of the glass substrate, the manufacturing date of the glass substrate, the shipping date of the glass substrate, and the serial number of the glass substrate. 如申請專利範圍第1項或第2項所述的玻璃基板，其翹曲量為60μm以下。The glass substrate according to item 1 or item 2 of the scope of patent application has a warpage amount of 60 μm or less. 如申請專利範圍第1項或第2項所述的玻璃基板，其中表面的全部或一部分為研磨面。The glass substrate according to item 1 or item 2 of the scope of patent application, wherein all or part of the surface is a polished surface. 如申請專利範圍第1項或第2項所述的玻璃基板，其於玻璃內部具有成形合流面。The glass substrate according to item 1 or item 2 of the patent application scope, which has a shaped confluent surface inside the glass. 如申請專利範圍第1項或第2項所述的玻璃基板，其中外形為晶圓形狀。The glass substrate according to item 1 or item 2 of the patent application scope, wherein the outer shape is a wafer shape. 如申請專利範圍第1項或第2項所述的玻璃基板，其於半導體封裝體的製造步驟中用於支撐加工基板。The glass substrate according to item 1 or 2 of the scope of patent application, which is used to support the processing substrate in the manufacturing steps of the semiconductor package. 一種積層體，其至少具備加工基板及用於支撐所述加工基板的玻璃基板，所述積層體的特徵在於：所述玻璃基板為如申請專利範圍第1項至第9項中任一項所述的玻璃基板。A laminated body comprising at least a processing substrate and a glass substrate for supporting the processing substrate. The laminated body is characterized in that the glass substrate is any one of items 1 to 9 of the scope of patent application. Mentioned glass substrate. 如申請專利範圍第10項所述的積層體，其中所述加工基板至少具備利用密封材而成型的半導體晶片。The laminated body according to claim 10, wherein the processing substrate includes at least a semiconductor wafer formed by using a sealing material. 一種玻璃基板的製造方法，其特徵在於包括：(1)將玻璃原板切斷而獲得玻璃基板的步驟；(2)以所述玻璃基板的整體板厚偏差未滿2.0μm的方式對所述玻璃基板的表面進行研磨的步驟；以及(3)藉由利用雷射照射的熱衝擊來形成自所述玻璃基板的內部向表層延伸的深度為5μm~70μm的裂紋，藉此形成包括多個點的資訊辨別部的步驟。A method for manufacturing a glass substrate, comprising: (1) a step of cutting a glass original plate to obtain a glass substrate; and (2) arranging the glass in such a manner that a deviation of an entire plate thickness of the glass substrate is less than 2.0 μm. A step of polishing the surface of the substrate; and (3) forming a crack with a depth of 5 μm to 70 μm extending from the inside of the glass substrate to the surface layer by using thermal shock of laser irradiation, thereby forming a plurality of dots Steps in the Information Identification Division.
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