TWI668851B - Wafer-level sensor and method of making the same - Google Patents

Abstract

The invention discloses a wafer level sensing module and a manufacturing method thereof. The wafer level sensing module includes a wafer substrate, a proximity sensing unit, and an ambient light sensing unit. The proximity sensing unit is disposed on the wafer substrate and includes a transmitter, a first receiver, and an isolation component. The isolation assembly includes first, second, third spacers, a first lens, and a second lens. The ambient light sensing unit is disposed on the wafer substrate and separated from the proximity sensing unit, and includes a second receiver and a transparent spacer. The first receiver and the second receiver are formed on the wafer substrate and exposed to the upper surface of the wafer substrate, and the position of the transparent spacer corresponds to the second receiver. Thereby, the present invention can provide a more compact module volume, a larger ambient light sensing angle of view, a smaller proximity sensing opening and a reduced crosstalk effect.

Description

Wafer level sensing module and manufacturing method thereof

The invention relates to an induction module and a manufacturing method thereof, in particular to a wafer level sensing module and a manufacturing method thereof.

With the development of technology, mobile devices with touch screens have become a common trend. Therefore, there is a need to provide proximity sensors in mobile devices to detect the user's head and face to determine that the user is using the action. When the device makes a call and temporarily disables the screen, it may not affect the call by mistake.

Taking a smart phone as an example, the prior art solution provides a sensor module for a smart phone, which includes a transmitter, a proximity sensor receiver, and an ambient light receiver, wherein the transmitter and the two receivers are set. In different chambers in the package housing to avoid crosstalk effects, the transmitter is disposed on the circuit substrate, and the two receivers are disposed on the circuit substrate, and the package housing has a corresponding transmitter, a proximity sensor, and an environment. The opening of the light receiver.

However, in the current design, the package housing allows the proximity sensor module to occupy a considerable proportion of space in the mobile phone. In particular, the design of the electronic device is mainly based on thin and light orientation. Therefore, there is a demand for miniaturization of the induction module on the market. In addition, in order to achieve a higher sensing effect, the sensor preferably has a design that senses a large viewing angle. However, increasing the sensing viewing angle also increases the crosstalk effect in the sensing module, and the height of the package housing and The thickness also limits the sensing angle of view of the sensor. In addition, miniaturization and miniaturization of open holes in the mobile device are also required on the market. Therefore, the prior art sensing module still has a missing and requires a new alternative.

The technical problem to be solved by the present invention is to provide a wafer level sensing module and a manufacturing method thereof for the deficiencies of the prior art. The wafer level sensing module has a smaller module size, a larger ambient light sensing viewing angle, a smaller proximity sensing opening, and a reduced crosstalk effect compared to the prior art.

In order to solve the above technical problem, one of the technical solutions adopted by the present invention is to provide a wafer level sensing module including a wafer substrate, a proximity sensing unit, and an ambient light sensing unit. The proximity sensing unit is disposed on the wafer substrate, the proximity sensing unit includes a transmitter, a first receiver, and an isolation component, and the isolation component includes a first spacer and a second spacer. a third spacer, a first lens and a second lens. The ambient light sensing unit is disposed on the wafer substrate and separated from the proximity sensing unit, and the ambient light sensing unit includes a second receiver and a transparent spacer. The first receiver and the second receiver are formed on the wafer substrate and exposed to an upper surface of the wafer substrate, and the position of the transparent spacer corresponds to the second receiver. The first lens is coupled between the first spacer and the second spacer, and the emitter is located at the first spacer, the first lens, the second spacer, and a first space defined by the wafer substrate, the second lens is connected between the second spacer and the third spacer, and the first receiver is located by the second spacer The second lens, the third spacer, and a second space defined by the wafer substrate.

In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a method for manufacturing a wafer level sensing module, comprising: providing a wafer substrate, wherein the wafer substrate is formed with a first receiver and a a second receiver, wherein the first receiver and the second receiver are exposed to an upper surface of the wafer substrate; an emitter is disposed on the wafer substrate; and an isolation component is disposed on the The upper surface of the wafer substrate, and the isolation component includes a first spacer, a second spacer, a third spacer, a first lens, and a second lens. Wherein the position of the first lens corresponds to the emitter, and the position of the second lens corresponds to the first receiver; and a transparent spacer is disposed on the upper surface of the wafer substrate Corresponding to a position of the second receiver; wherein the first lens is coupled between the first spacer and the second spacer, and the transmitter is located at the first spacer, a first lens, the second spacer, and a first space defined by the wafer substrate, the second lens being connected between the second spacer and the third spacer, and The first receiver is located in a second space defined by the second spacer, the second lens, the third spacer, and the wafer substrate, and the first receiver is configured to receive A signal emitted by the transmitter and reflected by a test object.

In order to solve the above technical problem, another technical solution adopted by the present invention is to provide a wafer level sensing module, comprising: a pre-fabricated wafer, a transmitter and a transparent spacer. The pre-fabricated wafer includes a wafer substrate, a first receiver formed on the wafer substrate, and a second receiver formed on the wafer substrate. The emitter is disposed on the wafer substrate. The transparent spacer is disposed on the wafer substrate and covers the second receiver. The first receiver is configured to receive a signal emitted from the transmitter and reflected by an object to be tested.

One of the beneficial effects of the present invention is that the wafer level sensing module and the method of manufacturing the same can be formed on the wafer substrate by the first receiver and the second receiver. The upper surface of the wafer substrate and the technical solution of the isolation component including a first spacer, a second spacer, a third spacer, a first lens and a second lens are Locating the emitter in a first space defined by the first spacer, the first lens, the second spacer, and the wafer substrate, and placing the first receiver at the location a second spacer, the second lens, the third spacer, and a second space defined by the wafer substrate.

In order to further understand the features and technical contents of the present invention, please refer to the following The detailed description and drawings of the present invention are intended to

Z‧‧‧ Wafer Level Sensor Module

1‧‧‧ wafer substrate

101‧‧‧ upper surface

102‧‧‧lower surface

11‧‧‧Electrical through holes

2‧‧‧Proximity sensing unit

21‧‧‧transmitter

22‧‧‧First Receiver

23‧‧‧Isolation components

231‧‧‧First spacer

232‧‧‧Second isolation

233‧‧‧ Third spacer

234‧‧‧First lens

235‧‧‧second lens

3‧‧‧ Ambient light sensing unit

31‧‧‧second receiver

32‧‧‧Transparent spacers

4‧‧‧Metal bumps

P‧‧‧ screen

1 is a side view of an application of a wafer level sensing module in an electronic device according to an embodiment of the invention; FIG. 2 is a side view of step S100 of a method for manufacturing a wafer level sensing module according to an embodiment of the invention; 3 is a side view of a step S102 of a method for fabricating a wafer level sensing module according to an embodiment of the invention; FIG. 4 is a step S104 of a method for fabricating a wafer level sensing module according to an embodiment of the invention. FIG. 5 is a side view of a step S106 of a method for fabricating a wafer level sensing module according to an embodiment of the invention; FIG. 6 is a schematic diagram of a method for fabricating a wafer level sensing module according to an embodiment of the invention; FIG. 7 is a side view of a method of fabricating a wafer level sensing module according to an embodiment of the invention. FIG.

The embodiments of the present invention relating to the "wafer level sensing module and its manufacturing method" are described by way of specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention by the contents disclosed in the specification. The invention can be implemented or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention. In addition, the drawings of the present invention are merely illustrative and are not intended to be stated in the actual size. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to limit the scope of the present invention.

It should be understood that although the terms first, second, third, etc. may be used herein to describe Various elements or signals are described, but these elements or signals should not be limited by these terms. These terms are primarily used to distinguish one element from another, or one signal and another. In addition, the term "or" as used herein may include a combination of any one or more of the associated listed items, depending on the actual situation.

[First Embodiment]

Referring to FIG. 1 , FIG. 1 is a schematic side view showing a wafer level sensing module Z applied to an electronic device according to an embodiment of the present invention, wherein a wafer level sensing module Z is disposed behind the screen P. As shown, the wafer level sensing module Z of the present embodiment includes a wafer substrate 1, a proximity sensing unit 2, and an ambient light sensing unit 3. The proximity sensing unit 2 is disposed on the wafer substrate 1 and includes a transmitter 21, a first receiver 22, and an isolation component 23. The isolation component 23 includes a first spacer 231, a second spacer 232, and a third. The spacer 233, a first lens 234 and a second lens 235. The ambient light sensing unit 3 is disposed on the wafer substrate 1 and separated from the proximity sensing unit 2, and the ambient light sensing unit 3 includes a second receiver 31 and a transparent spacer 32.

Further, as shown in FIG. 1 , the first lens 234 is connected between the first spacer 231 and the second spacer 232 , and the emitter 21 is located at the first spacer 231 , the first lens 234 , and the second spacer 232 and a first space R1 defined by the wafer substrate 1. The second lens 235 is connected between the second spacer 232 and the third spacer 233, and the first receiver 22 is defined by the second spacer 232, the second lens 235, the third spacer 233, and the wafer substrate 1. A second space R2.

In detail, in the present invention, the first spacer 231, the first lens 234, and the second spacer 232 are equivalent to each other by connecting the first lens 234 between the first spacer 231 and the second spacer 232. The cover 21 is packaged, and the emitter 21 is packaged on the wafer substrate 1. Similarly, by connecting the second lens 235 between the second spacer 232 and the third spacer 233, the second spacer 232 can be The second lens 235 and the third spacer 233 form a package cover to encapsulate the first receiver 22 On the wafer substrate 1.

With the above structure, the present invention does not need to be packaged using the prior art package housing, but uses a lens to connect the structure between the spacers, so that the spacer and the lens not only provide isolation of infrared light, reduce crosstalk effects, and concentrate light. The package can also form a package structure to encapsulate the emitter 21 and the first receiver 22, eliminating the space occupied by the conventional package housing, and enabling the wafer level sensing module Z of the present invention to have a smaller size. In line with the current trend of thin and light electronic products.

In addition, in the prior art, the sensing opening of the ambient light sensor is disposed in the package housing, and the height, thickness, and the like of the package housing limit the sensing angle of view formed by the ambient light receiver through the sensing opening. Affect the sensing effect. Therefore, the present invention replaces the prior art package housing with the above structure, and greatly increases the sensing angle of view of the second receiver 31 of the ambient light sensing unit 3, thereby improving the sensing effect.

Further, as shown in FIG. 1, the first receiver 22 and the second receiver 31 are formed on the wafer substrate 1 and exposed to an upper surface 101 of the wafer substrate 1, and the position of the transparent spacer 32 corresponds to the second Receiver 31. Specifically, the first receiver 22 and the second receiver 31 are formed together with the wafer substrate 1 and embedded in the wafer substrate 1. As shown, only the first receiver 22 and the second receiver 31 have only the upper surface. The upper surface of the wafer substrate 1 is exposed, and the transparent spacer 32 covers the second receiver 31 in a direction perpendicular to the wafer substrate 1.

In the prior art provided with an integrated proximity and ambient light sensing function, the proximity sensing receiver and the ambient light receiver are generally disposed on a wafer, and the chip is disposed on the circuit board together with the LED illuminator (transmitter). However, this design makes the height of the receiver higher than the height of the LED, which not only increases the crosstalk effect, but also because the effect of the crosstalk effect must be controlled, the LED and the proximity sensor receiver cannot be too close and must be kept at a certain distance, thus There must be openings for the transmitter and receiver on the screen, and the aperture size cannot be reduced to improve the sensing effect.

While the present invention eliminates the circuit board, the transmitter 21, the first receiver 22, and the second The receivers 31 are all disposed on the wafer substrate 1, and the first receiver 22 and the second receiver 31 are formed on the technical characteristics of the wafer substrate 1 so that the height of the first receiver 22 can be lower than the height of the emitter 21. The wafer level sensing module Z of the present invention can have a small crosstalk, and the distance between the first receiver 22 and the transmitter 21 can be relatively close compared with the prior art proximity sensor. Therefore, it is possible to share a proximity sensing opening, which satisfies the need for a small size and a small number of openings in the screen on the market.

Further, in the embodiment, the surface of the transparent spacer 32 of the ambient light sensing unit 3 is formed with a coating as a visible light filter or a three primary color filter. In detail, the transparent spacer 32 serves as a filter of the second receiver 31 on the one hand, and enables the ambient light sensing unit 3 to selectively function as a visible light sensor or a three primary color sensor. On the other hand, corresponding to the packaging function of the isolation component 23 of the proximity sensing unit 2, the transparent spacer 32 also serves as a package cover structure of the second receiver 31, so that the wafer level sensing module Z can be omitted from conventional packaging. The housing causes the ambient light sensing unit 3 to have an increased ambient light sensing viewing angle as compared to conventional ones.

Further, as shown in FIG. 1 , the wafer level sensing module Z of the embodiment further includes a plurality of metal bumps 4 and a redistribution circuit layer (not shown), and the redistribution circuit layer (in the figure) Not shown) is formed on the lower surface 102 of the wafer substrate 1. The present invention replaces the circuit board in the prior art by the redistribution circuit layer (not shown) and the metal bump 4, so that the wafer level sensing module Z can be connected to the external substrate by the metal bump 4. In this way, the proximity sensing unit 2, the ambient light sensing unit 3, and the emitter 21 can be directly formed on the wafer substrate 1 to greatly reduce the volume of the sensing module.

Referring to FIG. 2 to FIG. 7, a method of manufacturing the wafer level sensing module Z according to an embodiment of the present invention will be described below. The embodiment of the present invention provides a method for manufacturing a wafer level sensing module Z, which includes the step S100: providing a wafer substrate 1 having a first receiver 22, a second receiver 31, and a plurality of conductive vias The hole 11, the first receiver 22 and the second receiver 31 are exposed to an upper surface of the wafer substrate 1. 101. A plurality of conductive vias 11 are inserted through the wafer substrate 1. Referring to FIG. 2, specifically, in the present invention, the first receiver 22 and the second receiver 31 are formed together with the conductive vias 11 in the wafer substrate 1.

It should be noted that in other embodiments, the wafer substrate 1 may not include conductive vias, but may be turned on in a side wiring manner. Specifically, in other embodiments, step S100 may be: providing a prefabricated wafer including a wafer substrate 1, a first receiver 22 formed on the wafer substrate 1, and a first A second receiver 31 on the wafer substrate.

Referring to FIG. 3 and FIG. 4, the manufacturing method of the wafer level sensing module Z according to the embodiment of the present invention further includes the step S102: disposing a transmitter 21 on the wafer substrate 1; and step S104: placing an isolation component The second component 101 is disposed on the upper surface 101 of the wafer substrate 1 , and the isolation component 23 includes a first spacer 231 , a second spacer 232 , a third spacer 233 , a first lens 234 , and a second lens 235 . The position of the first lens 234 corresponds to the emitter 21, and the position of the second lens 235 corresponds to the first receiver 22.

Further, in the embodiment of the invention, the emitter 21 is disposed on the wafer substrate 1 in a flip chip manner, however, the invention is not limited thereto. In addition, the isolation component 23 is formed on the wafer substrate by an injection molding process or a replica molding process, wherein the first spacer 231, the second spacer 232, and the third The spacer 233 is formed of an infrared light-insulating material, and the first lens 234 and the second lens 235 are formed of a UV-curable material, and the first lens 234 is connected between the first spacer 231 and the second spacer 232, The two lenses 235 are connected between the second spacer 232 and the third spacer 233.

It should be noted that the present invention is not limited to the above. In other embodiments, the isolation component 23 can be replaced by a single spacer, wherein the spacer is disposed between the transmitter 21 and the first receiver 22 to block the transmitter 21. The crosstalk effect with the first receiver 22 causes the first receiver 22 to receive from the transmitter 21 and be subjected to a test object The reflected signal.

By the above method, the emitter 21 is located in the first spacer 231, the first lens 234, the second spacer 232, and a first space R1 defined by the wafer substrate 1, and the first receiver 22 is located in the second isolation. a second 232, a second lens 235, a third spacer 233, and a second space R2 defined by the wafer substrate 1, wherein the first receiver 22 is configured to receive the light emitted from the emitter 21 and reflected by a sample to be tested. The signal, and the first lens 234 and the second lens 235 are used to increase the concentration of the signal. The present invention replaces the conventional package housing with this structure so that the height of the first receiver 22 can be lower than that of the transmitter 21, thereby reducing the crosstalk effect and making the distance between the transmitter 21 and the first receiver 22 It is conventionally close to narrowing the opening of the proximity sensing unit 2.

Referring to FIG. 5 , the manufacturing method of the wafer level sensing module Z further includes a step S106 of disposing a transparent spacer 32 on a position corresponding to the second receiver 31 of the upper surface 101 of the wafer substrate 1 . Corresponding to the packaging function of the isolation component 23 for the emitter 21 and the first receiver 22, the transparent spacer 32 also encapsulates the second receiver 31 as a package cover, and in the present embodiment, the transparent spacer 32 is formed with a coating. (not shown), as a visible light filter or a three primary color filter, the ambient light sensing unit 3 is used as a visible light ambient light sensor or a three primary color ambient light sensor.

Next, referring to FIG. 6, the manufacturing method of the wafer level sensing module Z of the present invention further includes a step S108: disposing a plurality of metal bumps 4 and a redistribution wiring layer (not shown) on the wafer substrate 1 The lower surface 102. Therefore, the wafer level sensing module Z of the present embodiment replaces the circuit board in the sensing module of the prior art with the conductive via 11 , the metal bump 4 and the redistribution circuit layer (not shown), and further cooperates with the lens. The transparent isolation sheet and the like replace the structure of the package housing, and the invention can realize the wafer level sensing module Z of the wafer level.

In summary, the wafer level sensing module Z of the present invention is connected between the first spacer 231 and the second spacer 232 by using the first lens 234, and the second lens 235 is connected to the second spacer 232 and the third spacer. Between 233, the transparent spacer 32 corresponds to the first The position of the two receivers 31 is set on the structure of the wafer substrate 1, and instead of the conventional package housing, the wafer level sensing module Z has a relatively small volume. In addition, the conventional ambient light sensing viewing angle is limited by the opening on the package housing, and since the present invention replaces the package housing with the above structure, the second receiver 31 of the ambient light sensing unit 3 can have a considerable size. Sensing the angle of view. Furthermore, the present invention can reduce the crosstalk effect interference of the proximity sensing unit 2 by forming the first receiver 22 and the second receiver 31 on the wafer substrate 1. On the other hand, the transmitter 21 can be The distance of the first receiver 22 is narrowed to share a screen opening, thereby achieving the market demand for a small size and a small number of openings for the screen appearance.

[Advantageous Effects of Embodiments]

One of the beneficial effects of the present invention is that the wafer level sensing module and the manufacturing method thereof can be formed on the wafer substrate and exposed on the wafer substrate by the “first receiver and the second receiver”. The surface" and the "isolation assembly includes a first spacer, a second spacer, a third spacer, a first lens, and a second lens" to enable the transmitter to be located in the first spacer, a lens, a second spacer, and a first space defined by the wafer substrate, and the first receiver is located at a second defined by the second spacer, the second lens, the third spacer, and the wafer substrate space.

The above disclosure is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the drawings are included in the application of the present invention. Within the scope of the patent.

Claims (10)

A wafer level sensing module includes: a wafer substrate; a proximity sensing unit, the proximity sensing unit is disposed on the wafer substrate, the proximity sensing unit includes a transmitter, a first receiver, and a An isolation component, comprising: a first spacer, a second spacer, a third spacer, a first lens and a second lens; and an ambient light sensing unit, the ambient light sensing unit is configured Separating from the proximity sensing unit on the wafer substrate, the ambient light sensing unit includes a second receiver and a transparent spacer; wherein the first receiver and the second receiver are formed On the wafer substrate and exposed to an upper surface of the wafer substrate, and the position of the transparent spacer corresponds to the second receiver; wherein the first lens is coupled to the first spacer and Between the second spacers, and the emitter is located at the first spacer, the first lens, the second spacer, and a first space defined by the wafer substrate The second lens is coupled between the second spacer and the third spacer, and the first receiver is located by the second spacer, the second lens, and the third a spacer and a second space defined by the wafer substrate. The wafer level sensing module of claim 1, wherein a surface of the transparent spacer is formed with a coating layer as a visible light filter or a three primary color filter. The wafer level sensing module of claim 1, wherein the wafer substrate comprises a plurality of through holes penetrating the wafer substrate. The wafer level sensing module of claim 1, further comprising a plurality of metal bumps and a redistribution wiring layer, the redistribution wiring layer being formed on the wafer base The lower surface of the board. A method of fabricating a wafer level sensing module, comprising: providing a wafer substrate, the wafer substrate forming a first receiver and a second receiver, and the first receiver and the second receiver Exposing to an upper surface of the wafer substrate; disposing an emitter on the wafer substrate; disposing an isolation component on the upper surface of the wafer substrate, and the isolation component includes a first spacer a second spacer, a third spacer, a first lens, and a second lens, wherein a position of the first lens corresponds to the emitter, and a position of the second lens corresponds to a first receiver; and a transparent spacer disposed on a position of the upper surface of the wafer substrate corresponding to the second receiver; wherein the first lens is coupled to the first spacer and Between the second spacers, and the emitter is located in the first spacer, the first lens, the second spacer, and a first space defined by the wafer substrate, The second lens is connected to Between the second spacer and the third spacer, and the first receiver is located by the second spacer, the second lens, the third spacer, and the wafer substrate And a second space, the first receiver is configured to receive a signal emitted from the transmitter and reflected by a test object. The manufacturing method of claim 5, wherein the step of providing a wafer substrate further comprises: the wafer substrate is formed with a plurality of conductive vias, and the plurality of conductive vias extend through the wafer substrate . The manufacturing method of claim 5, wherein the step of disposing a transparent spacer on the upper surface of the wafer substrate corresponding to the position of the second receiver further comprises: A metal bump and a redistribution wiring layer are disposed on a lower surface of the wafer substrate. The manufacturing method according to claim 5, wherein the emitter is disposed on the wafer substrate by a flip chip. The manufacturing method according to claim 5, wherein the spacer member is formed on the wafer substrate by one of an injection molding method and a mold transfer method. A wafer level sensing module comprising: a pre-fabricated wafer, the pre-fabricated wafer comprising a wafer substrate, a first receiver formed on the wafer substrate, and a wafer formed on the wafer a second receiver on the substrate; a transmitter disposed on the wafer substrate; a spacer disposed between the transmitter and the first receiver; and a a transparent spacer disposed on the wafer substrate and covering the second receiver; wherein the first receiver is configured to receive from the emitter and be reflected by a test object signal.