TWI668725B - 使用模型化、回授及阻抗匹配之蝕刻速率的控制 - Google Patents

使用模型化、回授及阻抗匹配之蝕刻速率的控制 Download PDF

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Publication number
TWI668725B
TWI668725B TW103133992A TW103133992A TWI668725B TW I668725 B TWI668725 B TW I668725B TW 103133992 A TW103133992 A TW 103133992A TW 103133992 A TW103133992 A TW 103133992A TW I668725 B TWI668725 B TW I668725B
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TW
Taiwan
Prior art keywords
variable
impedance
computer
complex
value
Prior art date
Application number
TW103133992A
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English (en)
Chinese (zh)
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TW201528322A (zh
Inventor
布萊佛Ｊ 琳戴克
小約翰Ｃ 微寇爾
艾力西 瑪瑞卡塔諾
德瑞尼 沙伊德 賈法 傑法瑞恩
陳志剛
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US14/043,525 external-priority patent/US9337000B2/en
Priority claimed from US14/043,574 external-priority patent/US9401264B2/en
Priority claimed from US14/152,729 external-priority patent/US9620334B2/en
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW201528322A publication Critical patent/TW201528322A/zh
Application granted granted Critical
Publication of TWI668725B publication Critical patent/TWI668725B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW103133992A 2013-10-01 2014-09-30 使用模型化、回授及阻抗匹配之蝕刻速率的控制 TWI668725B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US14/043,525 US9337000B2 (en) 2013-10-01 2013-10-01 Control of impedance of RF return path
US14/043,574 US9401264B2 (en) 2013-10-01 2013-10-01 Control of impedance of RF delivery path
US14/043,525 2013-10-01
US14/043,574 2013-10-01
US14/152,729 US9620334B2 (en) 2012-12-17 2014-01-10 Control of etch rate using modeling, feedback and impedance match
US14/152,729 2014-01-10

Publications (2)

Publication Number Publication Date
TW201528322A TW201528322A (zh) 2015-07-16
TWI668725B true TWI668725B (zh) 2019-08-11

Family

ID=52793582

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103133992A TWI668725B (zh) 2013-10-01 2014-09-30 使用模型化、回授及阻抗匹配之蝕刻速率的控制

Country Status (3)

Country Link
KR (1) KR102313223B1 (ko)
CN (1) CN104518753B (ko)
TW (1) TWI668725B (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9720022B2 (en) * 2015-05-19 2017-08-01 Lam Research Corporation Systems and methods for providing characteristics of an impedance matching model for use with matching networks
KR102571772B1 (ko) * 2015-05-19 2023-08-25 램 리써치 코포레이션 매칭 네트워크 모델을 결정하도록 다양한 플라즈마 조건들을 적용하기 위해 복수의 유도성 픽스처 및 용량성 픽스처를 사용하기 위한 시스템들 및 방법들
US10386828B2 (en) * 2015-12-17 2019-08-20 Lam Research Corporation Methods and apparatuses for etch profile matching by surface kinetic model optimization
KR102460246B1 (ko) * 2016-03-04 2022-10-27 램 리써치 코포레이션 단계적 방식으로 임피던스 매칭 네트워크를 튜닝하기 위한 시스템들 및 방법들
US10197908B2 (en) 2016-06-21 2019-02-05 Lam Research Corporation Photoresist design layout pattern proximity correction through fast edge placement error prediction via a physics-based etch profile modeling framework
US9978621B1 (en) * 2016-11-14 2018-05-22 Applied Materials, Inc. Selective etch rate monitor
KR102080115B1 (ko) * 2016-11-24 2020-04-23 주식회사 원익아이피에스 기판처리장치의 제어방법
US10572697B2 (en) 2018-04-06 2020-02-25 Lam Research Corporation Method of etch model calibration using optical scatterometry
KR20200131342A (ko) 2018-04-10 2020-11-23 램 리써치 코포레이션 레지스트 및 에칭 모델링
CN111971551A (zh) 2018-04-10 2020-11-20 朗姆研究公司 机器学习中的光学计量以表征特征
US10977405B2 (en) 2019-01-29 2021-04-13 Lam Research Corporation Fill process optimization using feature scale modeling

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070095788A1 (en) * 2003-05-16 2007-05-03 Hoffman Daniel J Method of controlling a chamber based upon predetermined concurrent behavoir of selected plasma parameters as a function of selected chamber paramenters
US20080179948A1 (en) * 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
US20090284156A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US20110214811A1 (en) * 2010-03-04 2011-09-08 Tokyo Electron Limited Automatic matching method, computer-readable storage medium, automatic matching unit, and plasma processing apparatus
US8222821B2 (en) * 2007-06-26 2012-07-17 Samsung Electronics Co., Ltd. Pulse plasma matching systems and methods including impedance matching compensation

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6265831B1 (en) * 1999-03-31 2001-07-24 Lam Research Corporation Plasma processing method and apparatus with control of rf bias
US6528751B1 (en) * 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
KR100708313B1 (ko) * 2002-10-31 2007-04-17 세메스 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20080072642A (ko) * 2005-10-31 2008-08-06 엠케이에스 인스트루먼츠, 인코포레이티드 고주파 전력 전달 시스템

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070095788A1 (en) * 2003-05-16 2007-05-03 Hoffman Daniel J Method of controlling a chamber based upon predetermined concurrent behavoir of selected plasma parameters as a function of selected chamber paramenters
US20080179948A1 (en) * 2005-10-31 2008-07-31 Mks Instruments, Inc. Radio frequency power delivery system
US8222821B2 (en) * 2007-06-26 2012-07-17 Samsung Electronics Co., Ltd. Pulse plasma matching systems and methods including impedance matching compensation
US20090284156A1 (en) * 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US20110214811A1 (en) * 2010-03-04 2011-09-08 Tokyo Electron Limited Automatic matching method, computer-readable storage medium, automatic matching unit, and plasma processing apparatus

Also Published As

Publication number Publication date
KR102313223B1 (ko) 2021-10-15
KR20150039125A (ko) 2015-04-09
CN104518753B (zh) 2018-07-10
TW201528322A (zh) 2015-07-16
CN104518753A (zh) 2015-04-15

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