TWI666451B - Probe device and guide plate thereof - Google Patents

Probe device and guide plate thereof Download PDF

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Publication number
TWI666451B
TWI666451B TW106131782A TW106131782A TWI666451B TW I666451 B TWI666451 B TW I666451B TW 106131782 A TW106131782 A TW 106131782A TW 106131782 A TW106131782 A TW 106131782A TW I666451 B TWI666451 B TW I666451B
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guide plate
holes
plate
probe device
portions
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TW106131782A
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Chinese (zh)
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TW201915494A (en
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謝智鵬
蘇偉誌
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中華精測科技股份有限公司
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Abstract

一種探針裝置,包括:一第一導板,包含有一第一板體,形成有多個第一貫孔;及多個第一內絕緣部,分別成形於多個所述第一貫孔的內側壁,以使每個所述第一貫孔的所述內側壁被相對應的所述第一內絕緣部所完整覆蓋,並且每個所述第一內絕緣部的內側形成有一第一穿孔,而每個所述第一穿孔具有小於100微米(μm)的一第一孔徑;以及多個導電探針,各具有位於相反側的一第一端部與一第二端部,並且多個所述導電探針的所述第一端部分別穿過所述第一導板的多個所述第一穿孔。本發明另提供一種探針裝置的導板。 A probe device includes: a first guide plate including a first plate body formed with a plurality of first through holes; and a plurality of first internal insulating portions respectively formed in a plurality of the first through holes. An inner side wall, so that the inner side wall of each of the first through holes is completely covered by the corresponding first inner insulation portion, and a first perforation is formed inside the first inner insulation portion Each of the first through holes has a first aperture smaller than 100 micrometers ( μm ); and a plurality of conductive probes each having a first end portion and a second end portion on opposite sides, and more The first end portions of each of the conductive probes respectively pass through a plurality of the first perforations of the first guide plate. The invention also provides a guide plate of the probe device.

Description

探針裝置及其導板 Probe device and its guide plate

本發明涉及一種探針裝置,尤其涉及一種適用於垂直式探針卡的探針裝置及其導板。 The invention relates to a probe device, in particular to a probe device suitable for a vertical probe card and a guide plate thereof.

現有用於垂直式探針卡的探針裝置(即探針頭)包含有探針座及多個探針。其中,探針座具有上導板及下導板,而上導板及下導板依據待測物(如:晶片)的需求具有微孔陣列。 A conventional probe device (ie, a probe head) for a vertical probe card includes a probe base and a plurality of probes. The probe base has an upper guide plate and a lower guide plate, and the upper guide plate and the lower guide plate have a micro-hole array according to the requirements of the object to be measured (such as a wafer).

隨著電子產品朝向精密與多功能化發展,應用在電子產品內的積體電路之晶片結構也趨於複雜。為了能夠測試趨於複雜的晶片結構,探針裝置的探針數量增已加至數萬根以上,且兩個探針之間的間距(pitch)也越來越小,使得多個探針穿過的微孔陣列的孔徑已接近可加工的極限,且其加工精度也越來越無法掌握。 With the development of electronic products toward precision and multi-functionalization, the chip structure of integrated circuits used in electronic products has also become more complex. In order to be able to test the increasingly complex wafer structure, the number of probes of the probe device has been increased to more than tens of thousands, and the pitch between the two probes is also getting smaller and smaller, making multiple probes penetrate The pore diameter of the passed micro-hole array is approaching the limit of processing, and its processing accuracy is more and more difficult to grasp.

於是,本發明人認為上述缺陷可改善,乃特潛心研究並配合科學原理的運用,終於提出一種設計合理且有效改善上述缺陷的本發明。 Therefore, the present inventor believes that the above-mentioned defects can be improved, and with special research and cooperation with the application of scientific principles, he finally proposes an invention with a reasonable design and effective improvement of the above-mentioned defects.

本發明實施例在於提供一種探針裝置及其導板,能有效地改善現有探針裝置所可能產生的缺陷。 An embodiment of the present invention is to provide a probe device and a guide plate thereof, which can effectively improve defects that may occur in the existing probe device.

本發明實施例公開一種探針裝置,包括:一第一導板,包含有一第一板體,形成有多個第一貫孔;及多個第一內絕緣部,分別成形於多個所述第一貫孔的內側壁,以使每個所述第一貫孔的所述內側壁被相對應的所述第一內絕緣部所完整覆蓋,並且每個 所述第一內絕緣部的內側形成有一第一穿孔,而每個所述第一穿孔具有小於100微米(μm)的一第一孔徑;以及多個導電探針,各具有位於相反側的一第一端部與一第二端部,多個所述導電探針的所述第一端部分別穿過所述第一導板的多個所述第一穿孔、並位於所述第一導板的外側。 An embodiment of the present invention discloses a probe device, including: a first guide plate including a first plate body formed with a plurality of first through holes; and a plurality of first internal insulation portions respectively formed in a plurality of the aforesaid An inner side wall of the first through hole, so that the inner side wall of each of the first through holes is completely covered by the corresponding first inner insulating portion, and an inner side of each of the first inner insulating portion A first perforation is formed, and each of the first perforations has a first aperture smaller than 100 micrometers ( μm ); and a plurality of conductive probes each having a first end portion and a second An end portion, the first end portions of the plurality of conductive probes respectively pass through the plurality of first perforations of the first guide plate, and are located outside the first guide plate.

本發明實施例另公開一種探針裝置的導板,包括:一板體,形成有多個貫孔;以及多個內絕緣部,分別成形於多個所述貫孔的內側壁,以使每個所述貫孔的所述內側壁被相對應的所述內絕緣部所完整覆蓋,並且每個所述內絕緣部的內側形成有一穿孔,而每個所述穿孔具有小於100微米的一孔徑;其中,每個所述內絕緣部的內表面的表面粗糙度小於任一個所述貫孔的所述內側壁的表面粗糙度。 The embodiment of the present invention further discloses a guide plate of a probe device, which includes: a plate body formed with a plurality of through holes; and a plurality of internal insulation portions respectively formed on the inner side walls of the plurality of through holes so that each The inner side walls of each of the through holes are completely covered by the corresponding inner insulation portion, and a perforation is formed on the inner side of each of the inner insulation portions, and each of the perforations has an aperture smaller than 100 microns. Wherein the surface roughness of the inner surface of each of the inner insulating portions is smaller than the surface roughness of the inner sidewall of any one of the through holes.

綜上所述,本發明實施例的探針裝置及其導板,能通過所述板體形成有孔徑較大的多個貫孔、並且在多個所述貫孔的內側壁分別成形有多個內絕緣部、以分別形成有孔徑較小的多個穿孔(孔徑小於100微米),從而使得多個所述穿孔的加工精度被有效地提升,並且使得多個所述穿孔的加工門檻及整體的加工成本被有效地降低。 In summary, the probe device and its guide plate according to the embodiment of the present invention can form a plurality of through holes with a large hole diameter through the plate body, and form multiple holes on the inner side walls of the plurality of through holes, respectively. Internal insulation portions to form a plurality of perforations with smaller pore diameters (apertures smaller than 100 microns), so that the processing accuracy of the plurality of perforations is effectively improved, and the processing threshold and the overall of the plurality of perforations are improved. The processing cost is effectively reduced.

為能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與附圖,但是此等說明與附圖僅用來說明本發明,而非對本發明的保護範圍作任何的限制。 In order to further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention, but these descriptions and drawings are only used to illustrate the present invention, and not to make any limitation to the scope of the present invention limit.

100‧‧‧探針裝置 100‧‧‧ Probe device

1‧‧‧探針座 1‧‧‧ Probe Block

11‧‧‧第一導板 11‧‧‧ the first guide

111‧‧‧第一板體 111‧‧‧The first plate

112‧‧‧第一內絕緣部 112‧‧‧The first internal insulation department

113‧‧‧第一外絕緣部 113‧‧‧First external insulation department

114‧‧‧第一貫孔 114‧‧‧The first through hole

115‧‧‧第一穿孔 115‧‧‧ first perforation

12‧‧‧第二導板 12‧‧‧ second guide

121‧‧‧第二板體 121‧‧‧Second plate

122‧‧‧第二內絕緣部 122‧‧‧Second Internal Insulation Department

123‧‧‧第二外絕緣部 123‧‧‧Second External Insulation Department

124‧‧‧第二貫孔 124‧‧‧Second through hole

125‧‧‧第二穿孔 125‧‧‧ second perforation

2‧‧‧導電探針 2‧‧‧ conductive probe

21‧‧‧第一端部 21‧‧‧first end

22‧‧‧第二端部 22‧‧‧ second end

R1‧‧‧第一孔徑 R1‧‧‧first aperture

R2‧‧‧第二孔徑 R2‧‧‧Second Aperture

圖1為本發明探針裝置的立體示意圖。 FIG. 1 is a schematic perspective view of a probe device according to the present invention.

圖2為圖1的探針裝置沿II-II剖線的剖視示意圖。 FIG. 2 is a schematic cross-sectional view of the probe device of FIG. 1 along a line II-II.

圖3為本發明探針裝置的第一板體的立體剖視示意圖。 FIG. 3 is a schematic perspective cross-sectional view of a first plate of a probe device according to the present invention.

圖4為本發明探針裝置的第一導板的立體剖視示意圖。 FIG. 4 is a schematic perspective sectional view of a first guide plate of a probe device according to the present invention.

圖5為本發明探針裝置的第一穿孔形狀呈矩形的立體剖視示意圖。 FIG. 5 is a schematic perspective cross-sectional view of a first perforated shape of the probe device according to the present invention in a rectangular shape.

圖6為本發明探針裝置的第一導板僅包含有第一板體及多個第一內絕緣部的立體剖視示意圖。 FIG. 6 is a schematic perspective cross-sectional view of a first guide plate of a probe device of the present invention including only a first plate body and a plurality of first internal insulation portions.

請參閱圖1至圖6,其為本發明的實施例,需先說明的是,本實施例對應附圖所提及的相關數量與外型,僅用來具體地說明本發明的實施方式,以便於了解本發明的內容,而非用來侷限本發明的保護範圍。 Please refer to FIGS. 1 to 6, which are embodiments of the present invention. It should be noted that this embodiment corresponds to the related quantities and appearances mentioned in the drawings, and is only used to specifically describe the embodiments of the present invention. In order to facilitate understanding of the content of the present invention, it is not intended to limit the protection scope of the present invention.

如圖1及圖2,本實施例提供一種探針裝置100,所述探針裝置100包括一探針座1及多個導電探針2。其中,所述探針座1包含有一第一導板11(upper die)及一第二導板12(lower die),所述第一導板11與第二導板12彼此呈間隔地設置,而多個所述導電探針2能分別穿過所述第一導板11及第二導板12,以組裝成所述探針裝置100。此外,所述探針座也可以在第一導板11與第二導板12之間設置有一間隔板(圖中未示出),但本發明不受限於此。 As shown in FIGS. 1 and 2, a probe device 100 is provided in this embodiment. The probe device 100 includes a probe base 1 and a plurality of conductive probes 2. Wherein, the probe base 1 includes a first guide plate 11 (upper die) and a second guide plate 12 (lower die). The first guide plate 11 and the second guide plate 12 are spaced from each other. A plurality of the conductive probes 2 can pass through the first guide plate 11 and the second guide plate 12 respectively to assemble the probe device 100. In addition, the probe holder may be provided with a spacer (not shown) between the first guide plate 11 and the second guide plate 12, but the present invention is not limited thereto.

以下將分別說明本實施例探針裝置100的各個元件具體構造,而後再適時說明探針裝置100的各個元件間的連接關係。需先說明的是,為了便於理解本實施例,所以圖式僅呈現探針裝置100的局部構造,以便於清楚地呈現探針裝置100的各個元件構造與連接關係。 The specific structure of each element of the probe device 100 in this embodiment will be described below, and then the connection relationship between the various elements of the probe device 100 will be described in due course. It should be noted that, in order to facilitate understanding of this embodiment, the drawings only show a partial structure of the probe device 100, so as to clearly show the structure and connection relationship of each element of the probe device 100.

如圖2至圖4,所述第一導板11包含有一第一板體111、多個第一內絕緣部112、及一第一外絕緣部113。所述第一板體111形成有呈圓形的多個第一貫孔114(如:圖3),而多個所述第一內絕緣部112是分別成形於多個第一貫孔114的內側壁,以使每個所述第一貫孔114的內側壁被相對應的第一內絕緣部112所完 整覆蓋。所述第一外絕緣部113是成形於第一板體111的外表面,並且所述第一外絕緣部113相連於每個第一內絕緣部112的兩端,以使所述第一板體111完全地埋置於第一外絕緣部113與多個第一內絕緣部112之內。 As shown in FIG. 2 to FIG. 4, the first guide plate 11 includes a first plate body 111, a plurality of first inner insulation portions 112, and a first outer insulation portion 113. The first plate body 111 is formed with a plurality of circular first through holes 114 (eg, FIG. 3), and the plurality of first internal insulation portions 112 are respectively formed in the plurality of first through holes 114. An inner side wall, so that the inner side wall of each of the first through holes 114 is completed by the corresponding first inner insulating portion 112 Whole coverage. The first outer insulating portion 113 is formed on an outer surface of the first plate body 111, and the first outer insulating portion 113 is connected to both ends of each of the first inner insulating portions 112 so that the first plate The body 111 is completely buried within the first outer insulating portion 113 and the plurality of first inner insulating portions 112.

更詳細地說,每個所述第一內絕緣部112的內側形成有呈圓形的一第一穿孔115(如:圖4),並且所述第一穿孔115具有小於100微米(μm)的一第一孔徑R1。較佳地,所述第一孔徑R1是小於50微米,並且所述第一孔徑R1是小於第一導板11的厚度,而所述第一外絕緣部113的任一部位的厚度大致等同於任一個第一內絕緣部112的厚度。 In more detail, a first through hole 115 (eg, FIG. 4) having a circular shape is formed on the inner side of each of the first inner insulating portions 112, and the first through hole 115 has a diameter of less than 100 micrometers (μm). A first aperture R1. Preferably, the first aperture R1 is smaller than 50 micrometers, and the first aperture R1 is smaller than the thickness of the first guide plate 11, and the thickness of any portion of the first outer insulation portion 113 is substantially equal to The thickness of any one of the first inner insulating portions 112.

再者,所述第二導板12包含有一第二板體121、多個第二內絕緣部122、及一第二外絕緣部123。所述第二板體121形成有呈圓形的多個第二貫孔124,而多個所述第二內絕緣部122是分別成形於多個第二貫孔124的內側壁,以使每個所述第二貫孔124的內側壁被相對應的第二內絕緣部122所完整覆蓋。所述第二外絕緣部123是成形於第二板體121的外表面,並且所述第二外絕緣部123相連於每個第二內絕緣部122的兩端,以使所述第二板體121完全地埋置於第二外絕緣部123與多個第二內絕緣部122之內。 Furthermore, the second guide plate 12 includes a second plate body 121, a plurality of second inner insulation portions 122, and a second outer insulation portion 123. The second plate body 121 is formed with a plurality of second through holes 124 in a circular shape, and the plurality of second inner insulation portions 122 are respectively formed on the inner side walls of the plurality of second through holes 124 so that each The inner side walls of each of the second through holes 124 are completely covered by the corresponding second inner insulation portions 122. The second outer insulating portion 123 is formed on an outer surface of the second plate body 121, and the second outer insulating portion 123 is connected to two ends of each of the second inner insulating portions 122 so that the second plate The body 121 is completely buried within the second outer insulating portion 123 and the plurality of second inner insulating portions 122.

更詳細地說,每個所述第二內絕緣部122的內側形成有呈圓形的一第二穿孔125,並且所述第二穿孔125具有小於100微米(μm)的一第二孔徑R2。較佳地,所述第二孔徑R2是小於50微米,並且所述第二孔徑R2是小於第二導板12的厚度,而所述第一外絕緣部113的任一部位的厚度大致等同於任一個第一內絕緣部112的厚度。 In more detail, a circular second through hole 125 is formed on the inner side of each of the second inner insulation portions 122, and the second through hole 125 has a second aperture R2 smaller than 100 micrometers (μm). Preferably, the second aperture R2 is smaller than 50 micrometers, and the second aperture R2 is smaller than the thickness of the second guide plate 12, and the thickness of any portion of the first outer insulating portion 113 is substantially equal to The thickness of any one of the first inner insulating portions 112.

藉此,相較於現有導板的穿孔結構,本實施例第一導板11與第二導板12的穿孔結構易於加工、加工精準度高、且可降低整體製造成本。再者,現有導板的穿孔孔徑的加工精度極限大致只能 在100微米左右,但本實施例的第一導板11與第二導板12的結構,能使所述第一孔徑R1與第二孔徑R2進一步小於50微米,從而突破了現有的加工技術門檻。 Therefore, compared with the perforated structure of the existing guide plate, the perforated structure of the first guide plate 11 and the second guide plate 12 in this embodiment is easy to process, has high processing accuracy, and can reduce the overall manufacturing cost. In addition, the processing accuracy limit of the perforation hole diameter of the existing guide plate can only be roughly It is about 100 microns, but the structure of the first guide plate 11 and the second guide plate 12 in this embodiment can make the first aperture R1 and the second aperture R2 smaller than 50 microns, thereby breaking the threshold of the existing processing technology. .

更進一步地說,所述第一板體111與第二板體121可以分別為表面平面度小於等於30微米、平行度小於等於40微米、及線算術平均高度(Ra)大致為0.3微米的薄層基板,而所述薄層基板的材質可以為導體或非導體。較佳地,所述薄層基板可以選用具有較高機械強度的材質,例如:金屬板、陶瓷板、或矽基板。 Furthermore, the first plate 111 and the second plate 121 may be thin with a surface flatness of 30 μm or less, a parallelism of 40 μm or less, and a line arithmetic average height (Ra) of approximately 0.3 μm. Layer substrate, and the material of the thin layer substrate may be conductive or non-conductive. Preferably, the thin-layer substrate may be made of a material with high mechanical strength, such as a metal plate, a ceramic plate, or a silicon substrate.

再者,所述第一外絕緣部113的材質與每個第一內絕緣部112的材質相同,並且為彼此一體成型的構造。而所述第二外絕緣部123的材質與每個第二內絕緣部122的材質相同,並且為彼此一體成型的構造。較佳地,所述第一外絕緣部113、第二外絕緣部123、每個第一內絕緣部112、及每個第二內絕緣部122的材質可以分別選用陶瓷材料、聚四氟乙烯(Polytetrafluoroethylene,PTFE)、或聚對二甲苯(parylene)的至少其中之一。而每個所述第一內絕緣部112的內表面的表面粗糙度小於任一個第一貫孔114的內側壁的表面粗糙度,而每個所述第二內絕緣部122的內表面的表面粗糙度小於任一個第二貫孔124的內側壁的表面粗糙度。 In addition, the material of the first outer insulating portion 113 is the same as that of each of the first inner insulating portions 112 and is a structure integrally formed with each other. The material of the second outer insulating portion 123 is the same as that of each of the second inner insulating portions 122 and is a structure integrally formed with each other. Preferably, the materials of the first outer insulating portion 113, the second outer insulating portion 123, each of the first inner insulating portion 112, and each of the second inner insulating portion 122 may be selected from ceramic materials and polytetrafluoroethylene, respectively. (Polytetrafluoroethylene, PTFE), or at least one of parylene. The surface roughness of the inner surface of each of the first inner insulating portions 112 is smaller than the surface roughness of the inner sidewall of any one of the first through holes 114, and the surface of the inner surface of each of the second inner insulating portions 122 The roughness is smaller than the surface roughness of the inner sidewall of any one of the second through holes 124.

請繼續參閱圖3及圖4,以下接著說明本實施例第一導板11的製備方法,而所述第二導板12的製備方法大致與第一導板11的製備方法相同,在此不多作贅述。必須說明的是,下述第一導板11的製備方法僅是本發明的一種實施方式,本發明並不受限於此。也就是說,只要是任何可達成所述第一導板11的結構特徵的製備方法,都符合本發明的精神而屬於本發明的範圍。另外,下述第一板體111、第一內絕緣部112、與第一外絕緣部113的厚度,以及第一貫孔114與第一穿孔115的孔徑大小僅是示例性的說 明,本發明並不受限於此。 Please continue to refer to FIG. 3 and FIG. 4. The method for preparing the first guide plate 11 in this embodiment is described below. The method for preparing the second guide plate 12 is substantially the same as the method for preparing the first guide plate 11. More details. It must be noted that the method for preparing the first guide plate 11 described below is only one embodiment of the present invention, and the present invention is not limited thereto. That is, as long as it is any manufacturing method that can achieve the structural characteristics of the first guide plate 11, it conforms to the spirit of the present invention and belongs to the scope of the present invention. In addition, the thicknesses of the following first plate body 111, the first inner insulating portion 112, and the first outer insulating portion 113, and the sizes of the first through holes 114 and the first through holes 115 are merely exemplary. It is clear that the present invention is not limited to this.

所述第一導板11的製備方法包括:提供厚度約為150微米的所述第一板體111;對所述第一板體111進行一鑽孔製程(如:機械鑽孔或雷射鑽孔),以在所述第一板體111上形成有孔徑約為150微米的多個第一貫孔114(如:圖3);對所述第一板體111進行一沉積製程(如:陽極氧化、化學氣相沉積、或物理氣相沉積),以在多個所述第一貫孔114的內側壁分別形成厚度約為50微米的多個第一內絕緣部112,以及在所述第一板體111的兩側外表面分別形成厚度約為50微米的第一外絕緣部113(如:圖4)。 The method for preparing the first guide plate 11 includes: providing the first plate body 111 with a thickness of about 150 μm; and performing a drilling process (such as mechanical drilling or laser drilling) on the first plate body 111. Holes) to form a plurality of first through holes 114 (eg, FIG. 3) with a diameter of about 150 μm on the first plate body 111; and perform a deposition process on the first plate body 111 (eg: Anodization, chemical vapor deposition, or physical vapor deposition) to form a plurality of first inner insulating portions 112 with a thickness of about 50 micrometers on the inner sidewalls of the plurality of first through holes 114, and A first outer insulating portion 113 (eg, FIG. 4) having a thickness of about 50 μm is formed on the outer surfaces of both sides of the first plate body 111.

透過上述第一導板11的製作方式,所述第一導板11的板厚可以被有效地增加,而每個所述第一穿孔115的孔徑可以被有效地縮小。更詳細地說,由於所述第一板體111的上下各增加有約50微米的第一外絕緣部113,因此所述第一導板11的厚度可以被有效地增加至約250微米,而每個所述第一貫孔114的內側壁的兩側各增加有約50微米的第一內絕緣部112,因此所述第一穿孔115的孔徑可以被有效地縮小至約50微米。藉此,所述第一導板11的縱橫比(板厚與孔徑的比例)可以由原本的1:1(150:150)大幅地提升至5:1(250:50),從而有效地克服了現有探針裝置中第一導板11的多個第一穿孔115(微孔陣列)在加工上的困難,並且可以有效提升多個所述第一穿孔115的加工精度。 Through the above-mentioned manufacturing method of the first guide plate 11, the thickness of the first guide plate 11 can be effectively increased, and the aperture of each of the first through holes 115 can be effectively reduced. In more detail, since the first outer insulation portion 113 of about 50 micrometers is added to the upper and lower sides of the first plate body 111, the thickness of the first guide plate 11 can be effectively increased to about 250 micrometers, and A first inner insulating portion 112 of about 50 micrometers is added to both sides of the inner side wall of each of the first through holes 114, so the aperture of the first through hole 115 can be effectively reduced to about 50 micrometers. As a result, the aspect ratio (ratio of the plate thickness to the aperture) of the first guide plate 11 can be greatly increased from the original 1: 1 (150: 150) to 5: 1 (250: 50), thereby effectively overcoming The processing difficulties of the plurality of first perforations 115 (microhole arrays) of the first guide plate 11 in the existing probe device are eliminated, and the processing accuracy of the plurality of first perforations 115 can be effectively improved.

進一步地說,當所述第一板體111為金屬板(導體材質)時,第一導板11須以第一外絕緣部113與第一內絕緣部112完全地包覆於第一板體111,以達到絕緣效果。藉此,所述第一導板11可以使用易於加工且加工精準度高的金屬板作為第一板體111。 Further, when the first plate body 111 is a metal plate (conductor material), the first guide plate 11 must be completely covered with the first outer insulation portion 113 and the first inner insulation portion 112 on the first plate body. 111 to achieve insulation effect. Thereby, the first guide plate 11 can use a metal plate that is easy to process and has high processing accuracy as the first plate body 111.

再者,當所述第一板體111以鑽孔方式成形第一貫孔114時,第一貫孔114的內側壁通常會較為粗糙,但本實施例的第一內絕緣部112是通過沉積的方式成形,所以其內表面較為光滑。也就 是說,透過所述沉積製程,可以使得每個所述第一內絕緣部112的內表面的表面粗糙度小於任一個第一貫孔114的內側壁的表面粗糙度。藉此,當多個所述導電探針2分別觸碰於多個第一內絕緣部112的內表面時,可以減少所述第一導板11對多個導電探針2所帶來的損壞。 Furthermore, when the first through-hole 114 is formed by drilling the first plate body 111, the inner side wall of the first through-hole 114 is generally rough, but the first inner insulating portion 112 of this embodiment is formed by deposition. Shape, so its inner surface is relatively smooth. That is That is, through the deposition process, the surface roughness of the inner surface of each of the first inner insulating portions 112 can be made smaller than the surface roughness of the inner sidewall of any one of the first through holes 114. Thereby, when the plurality of conductive probes 2 respectively touch the inner surfaces of the plurality of first inner insulation portions 112, the damage caused by the first guide plate 11 to the plurality of conductive probes 2 can be reduced. .

值得一提的是,於本實施例中,圖4所呈現的第一穿孔115呈圓形,但本發明不受限於此。於實際應用時,所述第一穿孔115的形狀能夠配合導電探針2的橫截面形狀而加以調整,例如:當導電探針2的橫截面形狀為矩形時,所述第一穿孔115的形狀可以對應地設計為矩形(如:圖5)。另,所述第一導板11的厚度也可以配合探針座1的機構設計而加以調整(如:加厚或減薄)。再者,所述第一外絕緣部113的任一部位的厚度也可以是大於或小於任一個第一內絕緣部112的厚度,並不侷限於如本實施例所述。或者,所述第一導板11也可以僅包含有第一板體111及多個第一內絕緣部112,而不包含有第一外絕緣部113(如:圖6)。至於第二導板12的結構設計是類似第一導板11,在此不加以贅述。 It is worth mentioning that, in this embodiment, the first perforation 115 shown in FIG. 4 is circular, but the present invention is not limited thereto. In practical applications, the shape of the first perforation 115 can be adjusted to match the cross-sectional shape of the conductive probe 2, for example, when the cross-sectional shape of the conductive probe 2 is rectangular, the shape of the first perforation 115 It can be correspondingly designed as a rectangle (eg, Fig. 5). In addition, the thickness of the first guide plate 11 can also be adjusted according to the mechanism design of the probe base 1 (such as thickening or thinning). Furthermore, the thickness of any portion of the first outer insulating portion 113 may be greater than or less than the thickness of any one of the first inner insulating portions 112, and is not limited to that described in this embodiment. Alternatively, the first guide plate 11 may include only the first plate body 111 and the plurality of first inner insulation portions 112, but not the first outer insulation portion 113 (eg, FIG. 6). As for the structural design of the second guide plate 12 is similar to the first guide plate 11, it will not be repeated here.

請繼續參閱圖2,多個所述導電探針2於本實施例中為長條狀構造,且其材料可為鎳(Ni)、銅(Cu)、金(Au)、或類似物。每個所述導電探針2具有位於相反側的一第一端部21與一第二端部22,多個所述導電探針2的第一端部21分別穿過上述第一導板11的多個第一穿孔115、並位於所述第一導板11的外側,而多個所述導電探針2的第二端部22分別穿過上述第二導板12的多個第二穿孔125、並位於所述第二導板12的外側。 Please continue to refer to FIG. 2. In this embodiment, a plurality of the conductive probes 2 have a strip-shaped structure, and the material may be nickel (Ni), copper (Cu), gold (Au), or the like. Each of the conductive probes 2 has a first end portion 21 and a second end portion 22 on opposite sides, and the first end portions 21 of the plurality of conductive probes 2 pass through the first guide plate 11 respectively. The plurality of first perforations 115 are located outside the first guide plate 11, and the second ends 22 of the plurality of conductive probes 2 pass through the plurality of second perforations of the second guide plate 12, respectively. 125, and located outside the second guide plate 12.

其中,多個所述第一端部21凸伸出第一導板11的部分可組裝且電性連接於一電路板或載板(圖未繪示),以形成一垂直式探針卡結構。多個所述第二端部22凸伸出第二導板12的部分可用來點觸一晶片之電性接點(圖未繪示)以與晶片電性連接。在本 實施例中,多個所述第一端部21與多個第二端部22之末端呈平面狀,但在本發明未繪示的實施例中也可呈尖錐狀。 Wherein, a plurality of the first end portions 21 protruding from the first guide plate 11 can be assembled and electrically connected to a circuit board or a carrier board (not shown) to form a vertical probe card structure. . A plurality of portions of the second end portion 22 protruding from the second guide plate 12 can be used to touch electrical contacts (not shown) of a chip to be electrically connected to the chip. In this In the embodiment, the ends of the plurality of first end portions 21 and the plurality of second end portions 22 are in a flat shape, but in the embodiment not shown in the present invention, they may also have a tapered shape.

值得一提的是,於本實施例中,多個所述導電探針2能分別穿過所述第一導板11及第二導板12,以組裝成所述探針裝置100。但在本發明未繪示的實施例中,所述探針裝置100也可以僅包含有所述第一導板11,而不包含有所述第二導板12。 It is worth mentioning that, in this embodiment, a plurality of the conductive probes 2 can pass through the first guide plate 11 and the second guide plate 12 respectively to assemble the probe device 100. However, in an embodiment not shown in the present invention, the probe device 100 may include only the first guide plate 11 and not the second guide plate 12.

需額外說明的是,本實施例所使用的「第一」與「第二」是為了便於區別不同的元件,但未有先後次序之涵義,所以元件名稱中的「第一」與「第二」也可以省略。舉例來說,上述第一導板11與第二導板12也可以命名為導板,第一板體111與第二板體121也可以命名為板體,而第一內絕緣部112與第二內絕緣部122也可以命名為內絕緣部。此外,本實施例所提供的導板(如:上述第一導板11或第二導板12)可以是單獨販售的產品,並且其不限定僅能應用於上述的探針裝置100。也就是說,所述導板也可以應用於其它類型的探針裝置100。 It should be noted that the “first” and “second” used in this embodiment are to facilitate the distinction between different components, but there is no meaning of sequence. Therefore, the “first” and “second” in the component names "Can also be omitted. For example, the first and second guide plates 11 and 12 may also be named as guide plates, and the first and second plate bodies 111 and 121 may also be named as plate bodies. The two internal insulating portions 122 may also be named internal insulating portions. In addition, the guide plate provided in this embodiment (such as the above-mentioned first guide plate 11 or second guide plate 12) may be a separately sold product, and it is not limited to being applicable to the above-mentioned probe device 100 only. That is, the guide plate can also be applied to other types of probe devices 100.

[本發明實施例的技術功效] [Technical effect of the embodiment of the present invention]

綜上所述,本發明實施例的探針裝置及探針裝置的導板,能通過所述板體形成有孔徑較大的多個貫孔、並且在多個所述貫孔的內側壁分別成形有多個內絕緣部、以分別形成有孔徑較小的多個穿孔(孔徑小於100微米),從而使得所述導板的縱橫比(板厚與孔徑的比例)及多個所述穿孔的加工精度被有效地提升,並且使得多個所述穿孔的加工門檻及整體的加工成本被有效地降低。 In summary, the probe device and the guide plate of the probe device according to the embodiments of the present invention can form a plurality of through holes with a large aperture through the plate body, and can be formed on the inner side walls of the plurality of through holes, respectively. A plurality of internal insulation portions are formed to form a plurality of perforations with smaller pore diameters (apertures smaller than 100 microns), so that the aspect ratio (ratio of plate thickness to pore diameter) of the guide plate and a plurality of The processing accuracy is effectively improved, and the processing threshold of multiple perforations and the overall processing cost are effectively reduced.

再者,本發明實施例的探針裝置及探針裝置的導板,能通過每個所述內絕緣部的內表面的表面粗糙度小於任一個貫孔的內側壁的表面粗糙度,從而使得當多個所述導電探針分別觸碰於多個內絕緣部的內表面時,可以減少所述導板對多個導電探針所帶來 的損壞。 Furthermore, the probe device and the guide plate of the probe device according to the embodiments of the present invention can pass the surface roughness of the inner surface of each of the inner insulation portions to be smaller than the surface roughness of the inner sidewall of any through hole, so When a plurality of the conductive probes respectively touch the inner surfaces of the plurality of internal insulation portions, the conductive plate can be reduced to the plurality of conductive probes. Damage.

以上所述僅為本發明的優選可行實施例,並非用來侷限本發明的保護範圍,凡依本發明申請專利範圍所做的均等變化與修飾,皆應屬本發明的權利要求書的保護範圍。 The above are only the preferred and feasible embodiments of the present invention, and are not intended to limit the scope of protection of the present invention. Any equal changes and modifications made in accordance with the scope of patent application of the present invention shall fall within the protection scope of the claims of the present invention .

Claims (10)

一種探針裝置,包括:一第一導板,包含有一第一板體,形成有多個第一貫孔;及多個第一內絕緣部,分別成形於多個所述第一貫孔的內側壁,以使每個所述第一貫孔的所述內側壁被相對應的所述第一內絕緣部所完整覆蓋,並且每個所述第一內絕緣部的內側形成有一第一穿孔,而每個所述第一穿孔具有小於100微米(μm)的一第一孔徑;以及多個導電探針,各具有位於相反側的一第一端部與一第二端部,多個所述導電探針的所述第一端部分別穿過所述第一導板的多個所述第一穿孔、並位於所述第一導板的外側;其中,每個所述第一貫孔為機械鑽孔或雷射鑽孔,並且每個所述第一內絕緣部的內表面的表面粗糙度小於任一個所述第一貫孔的所述內側壁的表面粗糙度。A probe device includes: a first guide plate including a first plate body formed with a plurality of first through holes; and a plurality of first internal insulating portions respectively formed in a plurality of the first through holes. An inner side wall, so that the inner side wall of each of the first through holes is completely covered by the corresponding first inner insulation portion, and a first perforation is formed inside the first inner insulation portion And each of the first perforations has a first aperture smaller than 100 micrometers (μm); and a plurality of conductive probes each having a first end portion and a second end portion on opposite sides, a plurality of The first end portions of the conductive probes respectively pass through the plurality of first through holes of the first guide plate and are located outside the first guide plate; wherein each of the first through holes It is a mechanical or laser drilling, and the surface roughness of the inner surface of each of the first inner insulating portions is smaller than the surface roughness of the inner sidewall of any one of the first through holes. 如請求項1所述的探針裝置,其中,所述第一導板包含有成形於所述第一板體外表面的一第一外絕緣部,並且所述第一外絕緣部相連於每個所述第一內絕緣部的兩端,以使所述第一板體完全埋置於所述第一外絕緣部與多個所述第一內絕緣部之內。The probe device according to claim 1, wherein the first guide plate includes a first outer insulating portion formed on an outer surface of the first plate, and the first outer insulating portion is connected to each The two ends of the first inner insulating portion are so that the first plate body is completely buried in the first outer insulating portion and a plurality of the first inner insulating portions. 如請求項2所述的探針裝置,其中,所述第一板體為一金屬板、一陶瓷板、或一矽基板;所述第一外絕緣部與每個所述第一內絕緣部的材質相同、並且為陶瓷材料、聚四氟乙烯(Polytetrafluoroethylene,PTFE)、或聚對二甲苯(parylene)。The probe device according to claim 2, wherein the first plate is a metal plate, a ceramic plate, or a silicon substrate; the first outer insulating portion and each of the first inner insulating portions The material is the same, and is ceramic material, polytetrafluoroethylene (PTFE), or parylene. 如請求項2所述的探針裝置,其中,所述第一外絕緣部的任一部位的厚度等同於任一個所述第一內絕緣部的厚度。The probe device according to claim 2, wherein a thickness of any portion of the first outer insulating portion is equal to a thickness of any one of the first inner insulating portions. 如請求項1所述的探針裝置,其中,所述第一孔徑小於所述第一導板的厚度,所述第一孔徑小於50微米。The probe device according to claim 1, wherein the first aperture is smaller than a thickness of the first guide plate, and the first aperture is smaller than 50 microns. 如請求項1至5中任一項所述的探針裝置,其進一步包括有一第二導板,並且所述第二導板包含:一第二板體,形成有多個第二貫孔;及多個第二內絕緣部,分別成形於多個所述第二貫孔的內側壁,以使每個所述第二貫孔的所述內側壁被相對應的所述第二內絕緣部所完整覆蓋,並且每個所述第二內絕緣部的內側形成有一第二穿孔,而每個所述第二穿孔具有小於100微米(μm)的一第二孔徑,並且所述第二孔徑小於所述第一孔徑;其中,多個所述導電探針的所述第二端部分別穿過所述第二導板的多個所述第二穿孔、並位於所述第二導板的外側。The probe device according to any one of claims 1 to 5, further comprising a second guide plate, and the second guide plate includes: a second plate body formed with a plurality of second through holes; And a plurality of second inner insulating portions, respectively formed on the inner side walls of the plurality of second through holes, so that the inner side walls of each of the second through holes are corresponding to the second inner insulating portions It is completely covered, and a second perforation is formed on the inner side of each of the second inner insulation portions, and each of the second perforations has a second aperture smaller than 100 micrometers (μm), and the second aperture is smaller than The first aperture; wherein the second ends of the plurality of conductive probes respectively pass through the plurality of second perforations of the second guide plate and are located outside the second guide plate . 如請求項6所述的探針裝置,其中,所述第二導板包含有成形於所述第二板體外表面的一第二外絕緣部,並且所述第二外絕緣部相連於每個所述第二內絕緣部的兩端,以使所述第二板體完全埋置於所述第二外絕緣部與多個所述第二內絕緣部之內;其中,所述第二板體為一金屬板、一陶瓷板、或一矽基板;所述第二外絕緣部與每個所述第二內絕緣部的材質相同,且為陶瓷材料、聚四氟乙烯、或聚對二甲苯;每個所述第二內絕緣部的內表面的表面粗糙度小於任一個所述第二貫孔的所述內側壁的表面粗糙度。The probe device according to claim 6, wherein the second guide plate includes a second outer insulating portion formed on an outer surface of the second plate, and the second outer insulating portion is connected to each Two ends of the second inner insulating portion, so that the second plate body is completely buried in the second outer insulating portion and a plurality of the second inner insulating portions; wherein the second plate The body is a metal plate, a ceramic plate, or a silicon substrate; the second outer insulating portion is made of the same material as each of the second inner insulating portions, and is a ceramic material, polytetrafluoroethylene, or poly-to-two Toluene; the surface roughness of the inner surface of each of the second inner insulating portions is smaller than the surface roughness of the inner sidewall of any one of the second through holes. 一種探針裝置的導板,包括:一板體,形成有多個貫孔;以及多個內絕緣部,分別成形於多個所述貫孔的內側壁,以使每個所述貫孔的所述內側壁被相對應的所述內絕緣部所完整覆蓋,並且每個所述內絕緣部的內側形成有一穿孔,而每個所述穿孔具有小於100微米的一孔徑;其中,每個所述貫孔為機械鑽孔或雷射鑽孔,並且每個所述內絕緣部的內表面的表面粗糙度小於任一個所述貫孔的所述內側壁的表面粗糙度。A guide plate of a probe device includes: a plate body formed with a plurality of through holes; and a plurality of internal insulating portions respectively formed on the inner side walls of the plurality of through holes so that each of the through holes is The inner side wall is completely covered by the corresponding inner insulation portion, and a perforation is formed on the inner side of each of the inner insulation portions, and each of the perforations has an aperture smaller than 100 micrometers; The through holes are mechanical or laser drilled holes, and the surface roughness of the inner surface of each of the inner insulating portions is smaller than the surface roughness of the inner sidewall of any one of the through holes. 如請求項8所述的探針裝置的導板,其進一步包括有成形於所述板體外表面的一外絕緣部,並且所述外絕緣部相連於每個所述內絕緣部的兩端,以使所述板體完全埋置於所述外絕緣部與多個所述內絕緣部之內。The guide plate of the probe device according to claim 8, further comprising an outer insulating portion formed on an outer surface of the board, and the outer insulating portion is connected to both ends of each of the inner insulating portions, In this way, the board body is completely buried in the outer insulating portion and the plurality of inner insulating portions. 如請求項9所述的探針裝置的導板,其中,所述板體為一金屬板、一陶瓷板、或一矽基板;所述外絕緣部與每個所述內絕緣部的材質相同、並且為陶瓷材料、聚四氟乙烯、或聚對二甲苯。The guide plate of the probe device according to claim 9, wherein the plate body is a metal plate, a ceramic plate, or a silicon substrate; and the outer insulating portion is made of the same material as each of the inner insulating portions And is a ceramic material, polytetrafluoroethylene, or parylene.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200724940A (en) * 2005-12-30 2007-07-01 Ind Tech Res Inst A method of fabricating vertical probe head
US20140266274A1 (en) * 2013-03-13 2014-09-18 Shinko Electric Industries Co., Ltd. Probe guide plate and method for manufacturing the same
TW201537181A (en) * 2014-03-25 2015-10-01 Mpi Corp Vertical probe device and supporter used in the same
US20150301083A1 (en) * 2012-08-01 2015-10-22 Japan Electronic Materials Corporation Guide plate for a probe card and probe card provided with same
TWI515440B (en) * 2014-12-24 2016-01-01

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200724940A (en) * 2005-12-30 2007-07-01 Ind Tech Res Inst A method of fabricating vertical probe head
US20150301083A1 (en) * 2012-08-01 2015-10-22 Japan Electronic Materials Corporation Guide plate for a probe card and probe card provided with same
US20140266274A1 (en) * 2013-03-13 2014-09-18 Shinko Electric Industries Co., Ltd. Probe guide plate and method for manufacturing the same
TW201537181A (en) * 2014-03-25 2015-10-01 Mpi Corp Vertical probe device and supporter used in the same
TWI515440B (en) * 2014-12-24 2016-01-01

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