TWI665781B - Three-dimentsional complementary-conducting-strip structure - Google Patents

Three-dimentsional complementary-conducting-strip structure Download PDF

Info

Publication number
TWI665781B
TWI665781B TW106111776A TW106111776A TWI665781B TW I665781 B TWI665781 B TW I665781B TW 106111776 A TW106111776 A TW 106111776A TW 106111776 A TW106111776 A TW 106111776A TW I665781 B TWI665781 B TW I665781B
Authority
TW
Taiwan
Prior art keywords
dimensional
structural unit
signal lines
signal line
band structure
Prior art date
Application number
TW106111776A
Other languages
Chinese (zh)
Other versions
TW201838145A (en
Inventor
楊靜蘭
莊大慶
Original Assignee
大容科技顧問有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 大容科技顧問有限公司 filed Critical 大容科技顧問有限公司
Priority to TW106111776A priority Critical patent/TWI665781B/en
Publication of TW201838145A publication Critical patent/TW201838145A/en
Application granted granted Critical
Publication of TWI665781B publication Critical patent/TWI665781B/en

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

本發明揭露一種三維互補傳導帶結構。多數個二維網目金屬層上下相互堆疊並透過多數個金屬連接孔相互連接成一個三維網格結構,一或多數條信號線在這個三維網格結構中三維走線並且與三維網格結構相互分離。此外,每個二維網目金屬層是具有一或多個簍空區域的平面金屬層,三維網格結構接地而一或多信號線分別電性連接到一或多元件或端點,並且介電質材料被應用來將三維網格結構與這些信號線相互電性隔離。 The invention discloses a three-dimensional complementary conduction band structure. A plurality of two-dimensional mesh metal layers are stacked on top of each other and connected to each other through a plurality of metal connection holes to form a three-dimensional grid structure. One or more signal lines are three-dimensionally routed in this three-dimensional grid structure and separated from the three-dimensional grid structure. . In addition, each two-dimensional mesh metal layer is a planar metal layer having one or more empty areas. The three-dimensional grid structure is grounded and one or more signal lines are electrically connected to one or more components or terminals, respectively. Materials are used to electrically isolate the three-dimensional grid structure from these signal lines.

Description

三維互補傳導帶結構 Three-dimensional complementary conduction band structure

本發明系有關於互補傳導帶結構(complementary-conducting-strip structure),特別是有關於一或多信號線可以在其中任意三維走線的三維互補傳導帶結構,此三維互補傳導帶結構可以被應用在諸如微波毫米波積體電路與高頻系統模組間互聯線等等。 The present invention relates to a complementary-conducting-strip structure, in particular to a three-dimensional complementary conductive band structure in which one or more signal lines can be arbitrarily three-dimensionally routed, and the three-dimensional complementary conductive band structure can be applied. Interconnects such as microwave millimeter wave integrated circuits and high-frequency system modules.

半導體產業這些年來的發展,對於具有面積小與操作速率高等優點的高密度積體電路的需求是持續地增加,不論是中央處理器(central processing unit,CPU)、圖形處理器(graphic processing unit,CPU)、應用在諸如微波毫米波或超高頻通訊等無線產品的積體電路或是其他產品。 The development of the semiconductor industry over the years has continuously increased the demand for high-density integrated circuits with advantages such as small area and high operating speed, whether it is a central processing unit (CPU) or a graphics processing unit (graphic processing unit, CPU), integrated circuits used in wireless products such as microwave millimeter wave or UHF communication, or other products.

除了直接縮小元件的特徵尺寸(critical dimension,CD)的這個發展方向(像是鰭狀電晶體(FinFET)與碳納米管(carbon nanotube)等新近發展元件)之外,利用多層次整合技術(multilayered integration technology)在多個元件及/或端點間傳輸訊號也是一個發展方向。舉例來說,薄膜微帶(thin-film microstrips,TFMSs)與互 補傳導帶(complementary-conducting-strip,CCS)都是近年來普遍被發展與應用在諸如單晶微波積體電路(monolithic microwave integrated circuit,MMIC)等應用中形成信號線(signal line)的技術。無論如何,所有的現有技術在節省晶圓面積、減少干擾、有利散熱以及設計靈活度等等需求上都還有改進的空間。 In addition to directly reducing the development direction of the critical dimension (CD) of components (such as newly developed components such as FinFETs and carbon nanotubes), multilayered technology is used integration technology) is also a development direction for transmitting signals between multiple components and / or endpoints. For example, thin-film microstrips (TFMSs) interact with Complementary-conducting-strip (CCS) are technologies that have been commonly developed and applied to form signal lines in applications such as monolithic microwave integrated circuits (MMICs) in recent years. In any case, all existing technologies have room for improvement in terms of saving wafer area, reducing interference, facilitating heat dissipation, and design flexibility.

綜上所述,有需要改善現有技術或是發展新技術,進一步地發展與實現高密度積體電路,特別是當商業化應用需要更密集更有效率的積體電路時。 In summary, there is a need to improve existing technology or develop new technologies to further develop and implement high-density integrated circuits, especially when commercial applications require denser and more efficient integrated circuits.

本發明提出三維互補傳導帶結構,其至少可以應用在傳輸線(transmission line)及耦合線(coupled lines)。其中,二或多個二維網目金屬層(two-dimensional mesh metal layer)上下相互堆疊並透過一或多個金屬連接孔(via)(可以視為二維網目連接孔)相互連接成一個三維網格結構(three-dimensional network structure),而一或多條信號線在這個三維網格結構中三維走線。在此,任一條信號線可以是由一或多段水準的金屬線與一或多個垂直的金屬連接孔(可以視為信號線連接孔)相互連接而成。 The present invention proposes a three-dimensional complementary conduction band structure, which can be applied to at least transmission lines and coupled lines. Among them, two or more two-dimensional mesh metal layers are stacked on top of each other and connected to each other into a three-dimensional mesh through one or more metal connecting holes (can be regarded as two-dimensional mesh connecting holes). Three-dimensional network structure, and one or more signal lines are three-dimensionally routed in this three-dimensional grid structure. Here, any signal line may be formed by connecting one or more horizontal metal lines and one or more vertical metal connection holes (which can be regarded as signal line connection holes) to each other.

本發明提出三維互補傳導帶結構,其可以應用在傳輸線及耦合線等等。其中,一或多數條信號線在三維排列的多數個結構單元(unit cell)中三維走線,並且任一條信號線的走線方式都是可以任意變化的(像是彎折的信號線,meander signal lines)。在 任一個結構單元中,每條信號線皆與結構單元的各個邊緣以及其他的信號線都相互分離。 The invention proposes a three-dimensional complementary conduction band structure, which can be applied to transmission lines, coupling lines, and the like. Among them, one or more signal lines are three-dimensionally routed in a plurality of unit cells arranged three-dimensionally, and the routing method of any signal line can be arbitrarily changed (such as a bent signal line, meander signal lines). in In any one structural unit, each signal line is separated from each edge of the structural unit and other signal lines.

本發明提出的三維互補傳導帶結構系位於基底(substrate)上,並可以視為是由多數個二維網目金屬層以及多數個信號線金屬層交錯地垂直堆疊於基底上,再加上連接這些二維網目金屬層的多數個二維網目連接孔與連接這些信號線金屬層的多數個信號線連接孔所共同形成。其中,每一個二維網目金屬層都是具有一或多個簍空區域(empty area)的平面金屬層(planar metal layer),而每一個信號線金屬層都是由位於同一個平面(或說是位於相鄰二個二維網目金屬層之間)的一或多條金屬線(特別是平行於基底表面及/或這些二維網目金屬層的一或多條金屬線)所組成。此外,在垂直於基底表面方向上這些信號線系通過這些簍空區域,而在平行於基底表面方向上這些信號線系通過這些二維網目連接孔間的空隙。在此,是二維網目金屬層或信號線金屬層直接接觸基底(或說是位於這些金屬層的最下面)並不需要限制。此外,多數個介電質層(或說是內金屬介電質層)可以分別位於任二個相鄰的金屬層之間(或是與某些金屬層整合在同一層),藉以提供需要的電性隔離與機械支撐等等。在此,介電質層至少圍繞這些信號線與這些結構單元的邊緣,並且通常填滿這些信號線與這些結構單元的邊緣間的空間。 The three-dimensional complementary conduction band structure proposed by the present invention is located on a substrate, and can be regarded as a plurality of two-dimensional mesh metal layers and a plurality of signal line metal layers stacked vertically and alternately on the substrate, and connected to these A plurality of two-dimensional mesh connection holes of the two-dimensional mesh metal layer are formed together with a plurality of signal line connection holes connecting the signal line metal layers. Among them, each two-dimensional mesh metal layer is a planar metal layer having one or more empty areas, and each signal line metal layer is located on the same plane (or It is composed of one or more metal lines (especially one or more metal lines parallel to the substrate surface and / or these two-dimensional mesh metal layers) located between two adjacent two-dimensional mesh metal layers. In addition, the signal lines pass through the empty areas in a direction perpendicular to the substrate surface, and the signal lines pass through the two-dimensional meshes to connect the gaps between the holes in a direction parallel to the substrate surface. Here, the two-dimensional mesh metal layer or the signal line metal layer directly contacts the substrate (or is located at the bottom of these metal layers) does not need to be limited. In addition, most dielectric layers (or inner metal dielectric layers) can be located between any two adjacent metal layers (or integrated with some metal layers) to provide the required Electrical isolation and mechanical support, etc. Here, the dielectric layer surrounds at least the edges of the signal lines and the structural units, and usually fills the space between the signal lines and the edges of the structural units.

一般來說,這些信號線是如何走線如何分佈並不需要限制,只要不同的信號線不會相互接觸並且與這些二維網目金 屬層以及用以連接這些二維網目金屬層的這些二維網目連接孔都相互分離即可。舉例來說,在任一個結構單元,這些信號線的可能走線至少有下列幾種:水準方向上單根走線、水準方向上雙根平行走線、水準方向上彎折走線、垂直方向上單根走線、垂直方向上雙根平行走線、垂直方向上彎折走線、水準方向上的耦合線結構、垂直方向上的耦合線結構、水準方向上兩條並排穿梭、垂直方向上兩條並排穿梭、三或更多條信號線分別通過。此外,在任一個結構單元這些信號線的可能輪廓至少有下列幾種:直線形狀、L型形狀、T型形狀、十字型形狀、五條直線相互連接或是六條直線相互連接。 Generally speaking, there are no restrictions on how these signal lines are routed and distributed, as long as different signal lines do not touch each other and are in contact with these two-dimensional meshes. The metal layer and the two-dimensional mesh connection holes used to connect the two-dimensional mesh metal layers may be separated from each other. For example, in any structural unit, the possible routings of these signal lines are at least the following: single routing in the horizontal direction, double parallel routing in the horizontal direction, bent routing in the horizontal direction, and vertical direction Single trace, double parallel traces in the vertical direction, bent traces in the vertical direction, coupled line structure in the horizontal direction, coupled line structure in the vertical direction, two side-by-side shuttles in the horizontal direction, two in the vertical direction Three side-by-side shuttles and three or more signal lines pass through. In addition, the possible outlines of these signal lines in any structural unit are at least the following: straight shape, L shape, T shape, cross shape, five straight lines connected to each other or six straight lines connected to each other.

本發明所提出的三維互補傳導帶結構,不論是應用在傳輸線、耦合線或是其他領域,相較于習知的二維互補傳導帶結構都至少有下列幾個優點。第一、較多的設計靈活性,因為三維網格結構的垂直方向提供了習知二維互補傳導帶結構所沒有的調整彈性。第二、較佳的遮蔽作用,因為每條信號線在水準與垂直的三維方向都可以被接地的三維網格結構所遮蔽。第三、較佳的散熱,因為每條信號線在水準與垂直的三維方向都鄰近構成三維網格結構的金屬(不論是水準方向的二維網目金屬層或是垂直方向的信號線連接孔)。第四、節省積體電路的面積,因為這些信號線可以任意三維走線,所以用以連接相同數量的元件/端點的多數信號線所佔用的積體電路面積可以較使用習知二維互補傳導帶結構時來得減少。此外,較多的可調整參數與較多的可調整範圍,也有利於配合晶圓廠制程等等的調整來提高特徵阻抗 (characteristic impedance,Zc)與品質因素(quality factor,Q值)二者並減少對慢波係數(slow wave factor,SWF)的影響。 Compared with the conventional two-dimensional complementary conduction band structure, the three-dimensional complementary conduction band structure proposed by the present invention has at least the following advantages, whether it is applied to transmission lines, coupling lines, or other fields. First, more design flexibility, because the vertical direction of the three-dimensional grid structure provides adjustment flexibility not found in the conventional two-dimensional complementary conduction band structure. Second, a better shielding effect, because each signal line can be shielded by a grounded three-dimensional grid structure in the horizontal and vertical three-dimensional directions. Third, better heat dissipation, because each signal line is adjacent to the metal forming the three-dimensional grid structure in the horizontal and vertical three-dimensional directions (regardless of the horizontal two-dimensional mesh metal layer or the vertical signal line connection hole) . Fourth, save the area of the integrated circuit, because these signal lines can be arbitrarily three-dimensionally routed, the area of the integrated circuit occupied by the majority of the signal lines used to connect the same number of components / endpoints can be two-dimensionally complementary than the conventional one. The conduction band structure is sometimes reduced. In addition, more adjustable parameters and more adjustable ranges are also beneficial to improve the characteristic impedance in conjunction with the adjustment of the fab process, etc. (characteristic impedance (Zc) and quality factor (Q value) and reduce the effect on slow wave factor (SWF).

100‧‧‧三維互補傳導帶結構 100‧‧‧ three-dimensional complementary conduction band structure

110‧‧‧基底 110‧‧‧ substrate

120‧‧‧信號線 120‧‧‧ signal line

130‧‧‧三維網格結構 130‧‧‧ three-dimensional grid structure

140‧‧‧埠 140‧‧‧port

MET‧‧‧金屬層 MET‧‧‧ metal layer

IMD‧‧‧內金屬介電質層 IMD‧‧‧Inner metal dielectric layer

第一A圖、第一B圖、第一C圖與第一D圖分別摘要地顯示本發明的三維互補傳導帶結構應用在傳輸線的一個樣例的斜視圖、仰視圖與二個不同角度的側視圖。 The first diagram A, the first diagram B, the first diagram C, and the first diagram D respectively show an oblique view, a bottom view, and two different angles of an example of the application of the three-dimensional complementary conduction band structure of the present invention to a transmission line. Side view.

第二A圖到第二G圖分別摘要地顯示本發明的三維互補傳導帶結構應用在耦合線的一個樣例的結構單元與三種三維走線。 Figures 2A to 2G respectively show in summary the structural unit and three types of three-dimensional wirings of an example of the application of the three-dimensional complementary conduction band structure of the present invention to a coupling line.

第三A圖到第三D圖、第三E圖到第三H圖與第三I圖到第三L圖分別顯示信號線在水準方向上螺旋走線、垂直方向上螺旋走線與同時在水準方向與垂直方向上螺旋走線這三種應用的斜視圖、俯視圖、側視圖與前視圖。 The third A to third D, the third E to third H, and the third I to third L respectively show that the signal line spirals in the horizontal direction, the spiral spiral in the vertical direction, and Slanted, top, side, and front views of the three applications of horizontal and vertical spiral routing.

第四A圖到第四C圖摘要地顯示本發明所提出的三維互補傳導帶結構應用在傳輸線的結構單元的斜視圖、俯視圖與側視圖。 Figures 4A to 4C summarize the perspective, top, and side views of the structural unit of the three-dimensional complementary conduction band structure applied to the transmission line proposed by the present invention.

第五A圖顯示要需要連接的元件的分佈,第五B圖顯示使用習知二維互補傳導帶結構時信號線的走線方式,而第五C圖顯示在使用本發明三維互補傳導帶結構時信號線的走線方式。第五D圖與第五E圖顯示所有信號線在同一個平面上的狀況,第五F圖與第五G圖顯示所有信號線在上下二個平面的狀況,而第五H圖與第五I圖顯示所有信號線在上下共四個平面的狀況。 The fifth diagram A shows the distribution of the components to be connected, the fifth diagram B shows the routing of the signal lines when using the conventional two-dimensional complementary conduction band structure, and the fifth diagram C shows the three-dimensional complementary conduction band structure when the present invention is used. How the signal lines are routed. The fifth diagram D and the fifth diagram E show the condition of all signal lines on the same plane, the fifth diagram F and the fifth diagram G show the condition of all signal lines on the upper and lower planes, and the fifth diagram H and the fifth Figure I shows the condition of all signal lines in four planes above and below.

第六A圖顯示單根傳輸線狀況而第六B圖到第六D圖分別顯示在此狀況下特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係的模擬計算結果。第六E圖顯示單根彎折線狀況而第六F圖到第六H圖分別顯示在此狀況下特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係的模擬計算結果。第六I圖到第六K圖顯示第三A圖到第三D圖所顯示的應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果,第六L圖到第六N圖顯示第三E圖到第三H圖所顯示的應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果,而第六O圖到第六Q圖顯示第三I圖到第三L圖顯示的應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果。 The sixth graph A shows the condition of a single transmission line and the sixth graph B to sixth D respectively show the results of simulation calculations of the relationship between the characteristic impedance, the slow wave coefficient and the quality factor and the frequency of the transmitted signal under this condition. The sixth E diagram shows the condition of a single bend line, and the sixth F to sixth H diagrams respectively show the results of the simulation calculation of the relationship between the characteristic impedance, the slow wave coefficient and the quality factor and the frequency of the transmitted signal under these conditions. The sixth graphs I to K show the calculation results of the relationship between the characteristic impedance, slow wave coefficient, and quality factor of the application and the frequency of the transmitted signal shown in the third graphs A to D, and the sixth L graph. Figures 6 to N show simulation calculation results of the relationship between the characteristic impedance, slow wave coefficient, and quality factor of the applications shown in Figures 3 E to 3 H, and the frequency of the transmitted signal. The Q diagram shows the simulation calculation results of the relationship between the characteristic impedance, slow wave coefficient, and quality factor of the application and the frequency of the transmitted signal shown in the third I to third L diagrams.

本發明將詳細描述在下述一些實施例。然而,除了所揭露的實施例外,本發明也可以廣泛地被應用在其他的種種變化。本發明的範圍並不受限於所揭露的實施例,而系以申請專利範圍為准。而為提供更清楚的描述即使熟悉該項技藝者能理解本發明的內容,圖示內各部分並沒有依照其實際相對尺寸而繪圖,某些部分尺寸與其他相關尺度的比例或被凸顯或被簡化,且不相關的細節部分亦未完全繪出,以求圖示的簡潔。 The invention will be described in detail in the following examples. However, in addition to the disclosed embodiments, the present invention can also be widely applied to other various changes. The scope of the present invention is not limited to the disclosed embodiments, but is based on the scope of patent application. In order to provide a clearer description, even if the person skilled in the art can understand the content of the present invention, the parts in the diagram are not drawn according to their actual relative sizes. The proportion of the size of some parts to other relevant dimensions is highlighted or recognized. Simplified, and irrelevant details are not completely drawn, in order to simplify the illustration.

本發明系有關於三維互補傳導帶結構,亦即是有關於互補傳導帶結構這個技術領域的進一步改良創新。習知的二維 互補傳導帶結構的細節將省略不多重複,而僅著重在本發明所提出的三維互補傳導帶結構相對于習知的二維互補傳導帶結構的不同處與優點。關於習知的二維互補傳導帶結構的內容,不論是應用在傳輸線(transmission line)、耦合線(coupled lines)或是其他,不論是將多數個信號線與多數個二維網目金屬層間相互交錯堆疊或是將多數個信號線放置在堆疊的一些二維網目金屬層的上方,或是其他的相關細節,可以透過參考至少下列檔案而瞭解:US 8183961、US8106729、US8106721與US8085113。 The invention relates to a three-dimensional complementary conduction band structure, that is, to a further improvement and innovation in the technical field of the complementary conduction band structure. Conventional two-dimensional The details of the complementary conduction band structure will be omitted without much repetition, but only focus on the differences and advantages of the three-dimensional complementary conduction band structure proposed by the present invention over the conventional two-dimensional complementary conduction band structure. Regarding the conventional two-dimensional complementary conductive band structure, whether it is applied to transmission lines, coupled lines, or other, whether it is to interleave a plurality of signal lines with a plurality of two-dimensional mesh metal layers Stacking or placing a plurality of signal lines on top of some two-dimensional mesh metal layers of the stack, or other related details, can be understood by referring to at least the following files: US 8183961, US8106729, US8106721, and US8085113.

第一A圖摘要地顯示本發明所提出的三維互補傳導帶結構的一個應用在傳輸線的樣例的斜視圖,第一B圖為相對應的仰視圖而第一C圖與第一D圖為相對應的不同角度的側視圖。整個三維互補傳導帶結構100位於基底110上方,並且包含在垂直於基底110表面的方向上相互堆疊的n層金屬層(metal layer)MET1、MET2、MET3…MET10與MTE11以及交錯地位於相鄰金屬層間(或說是鑲嵌於相鄰金屬層間)的內金屬介電質層(inter-metal dielectric layer,IMD)IMD1-2、IMD2-3…IMD10-11。其中,MET1、MET3、MET5…等皆為具有至少一個簍空區域的平面金屬層,亦可視為皆為二維網目金屬層。其中,MET2、MET4、MET6…的任一個皆為位於同一個平面(或說是位於相鄰二個二維網目金屬層間)的至少一金屬線,或可視為皆為信號線金屬層。其中,不同平面的金屬線(或說是不同的信號線金屬層)系透過一或多個信號線連接孔相互連接而構成可以在水準方向與垂直方向走線的信號線120。由於是應用在 傳輸線的樣例,在由這些二維網目金屬層與用以連接這些二維網目金屬層的二維網目連接孔所共同構成的三維網格結構130的每一個結構單元(unit cell)都只有一條信號線120。顯然地,這個三維網格結構130可以視為多數個結構單元的三維排列,在此任一個結構單元在垂直基底表面的Z方向的二側為相鄰二個二維網目金屬層而在平行基底表面方向的X方向與Y方向分別的二側皆由相鄰的二維網目連接孔所限定。顯然地,如第一A圖到第一D圖所示,在任一個結構單元中,這些信號線的走線方式包括了水準方向上單根直線與單根彎折線,也包括了垂直方向上單根直線與單根彎折線。藉此,任一條信號線都可以在這個三維網格結構130內部任意地三維走線(不論是某個平面上的彎折走線或是在某個方向上的直線走線)。在此,在垂直於基底表面方向這些信號線系通過這些簍空區域,而在平行於基底表面方向這些信號線系通過這些二維網目連接孔間的空隙。 The first diagram A schematically shows a perspective view of an example of a three-dimensional complementary conduction band structure applied to a transmission line according to the present invention. The first diagram B is a corresponding bottom view and the first diagram C and the first diagram D are Corresponding side view of different angles. The entire three-dimensional complementary conduction band structure 100 is located above the substrate 110 and includes n metal layers MET1, MET2, MET3, MET10, MET10, and MTE11 stacked alternately on adjacent metals in a direction perpendicular to the surface of the substrate 110. Inter-metal dielectric layers (IMDs) IMD1-2, IMD2-3, ..., IMD10-11 between layers (or inlaid between adjacent metal layers). Among them, MET1, MET3, MET5, etc. are all planar metal layers having at least one empty area, and can also be regarded as all two-dimensional mesh metal layers. Among them, any of MET2, MET4, MET6, etc. are all at least one metal line located on the same plane (or between two adjacent two-dimensional mesh metal layers), or can be regarded as all signal line metal layers. Wherein, the metal lines of different planes (or different signal line metal layers) are connected to each other through one or more signal line connection holes to form a signal line 120 that can be routed in a horizontal direction and a vertical direction. Since it is applied in An example of a transmission line is that there is only one unit cell in the three-dimensional grid structure 130 formed by the two-dimensional mesh metal layers and the two-dimensional mesh connection holes used to connect the two-dimensional mesh metal layers. Signal line 120. Obviously, the three-dimensional grid structure 130 can be regarded as a three-dimensional arrangement of a plurality of structural units. Herein, any structural unit is adjacent to two two-dimensional mesh metal layers on two sides of the Z direction of the vertical substrate surface and parallel to the substrate. The two sides of the surface direction, the X direction and the Y direction, are both defined by adjacent two-dimensional mesh connection holes. Obviously, as shown in Figures A through D, in any structural unit, the routing of these signal lines includes a single straight line and a single bend line in the horizontal direction, and also includes a single line in the vertical direction. Straight line and single bend line. With this, any signal line can be arbitrarily three-dimensionally routed within the three-dimensional grid structure 130 (whether it is a bent route on a certain plane or a straight route in a certain direction). Here, the signal lines in the direction perpendicular to the substrate surface pass through the empty areas, and the signal lines in the direction parallel to the substrate surface pass through the two-dimensional meshes to connect the gaps between the holes.

一般來說,這些內金屬介電質層至少圍繞這些信號線、這些二維網目連接孔與這些二維網目金屬層,並且通常填滿這些信號線、這些二維網目連接孔與這些二維網目金屬層間的空隙。並且,為減少電容耦合等的影響,這些內金屬介電質層往往是由具有低介電係數的介電質材料所形成。在實際應用上,任一條信號線的兩端往往是連接到不同的元件或不同的端點,像是金氧半電晶體的源極/汲極/閘極、電容或電感的端點、或是用以連接到積體電路外部的介面等等。此外,雖未在這些圖示中特別畫出, 三維網格結構130在實際應用中往往都是電性連接到某個電位基準點,像是基底110的電位基準點或是位於基底110的其它半導體元件的電位基準點。 Generally, these inner metal dielectric layers surround at least these signal lines, these two-dimensional mesh connection holes and these two-dimensional mesh metal layers, and usually fill these signal lines, these two-dimensional mesh connection holes and these two-dimensional meshes. Gap between metal layers. In addition, in order to reduce the influence of capacitive coupling and the like, these inner metal dielectric layers are often formed of a dielectric material having a low dielectric constant. In practical applications, the two ends of any signal line are often connected to different components or different terminals, such as the source / drain / gate of a metal-oxide semiconductor transistor, the end of a capacitor or inductor, or It is used to connect to the interface outside the integrated circuit and so on. In addition, although not specifically drawn in these illustrations, In practical applications, the three-dimensional grid structure 130 is often electrically connected to a certain potential reference point, such as the potential reference point of the substrate 110 or the potential reference points of other semiconductor elements located on the substrate 110.

必須強調的是,本發明所提出的三維互補傳導帶結構既可以應用在傳輸線也可以應用在耦合線,或甚至可以應用到其他的產品。也就是說,在任一個結構單元中有多少信號線並不需要限制,而且這一或多條信號線的輪廓形狀與走線方式等等也並不需要限制,本發明只要求這些信號線彼此間相互分離並且也與三維網格結構130相互分離。 It must be emphasized that the three-dimensional complementary conduction band structure proposed by the present invention can be applied to both transmission lines and coupling lines, or even to other products. That is, there is no need to limit how many signal lines are in any one structural unit, and the outline shape and routing method of one or more signal lines do not need to be limited. The present invention only requires these signal lines to be between each other. Separate from each other and also from the three-dimensional grid structure 130.

舉例來說,第二A圖到第二G圖顯示了本發明的三維互補傳導帶結構應用在耦合線時的狀況。其中第二A圖到第二D圖顯示此時的結構單元,而第二E圖與第二G圖顯示三種三維走線的樣例。舉例來說,第三A圖到第三D圖顯示信號線在水準方向上螺旋走線這種應用的斜視圖、俯視圖、側視圖與前視圖,第三E圖到第三H圖顯示信號線在垂直方向上螺旋走線這種應用的斜視圖、俯視圖、側視圖與前視圖,第三I圖到第三L圖顯示信號線同時在水準方向與垂直方向上螺旋走線這種應用的斜視圖、俯視圖、側視圖與前視圖。在此,為簡化圖示,信號線120系以深色圖案表示,在信號線周圍的多數二維網目金屬層與多數二維網目連接孔(甚至基底110)皆系以淺色圖案表示,藉以凸顯本發明的三維互補傳導帶結構中信號線的種種三維走線方式。另外,埠(port)140為信號線120與三維互補傳導帶結構的外部環境的介面,本發明並不限制其細 節,任何已知的或將來會出現的技術與產品都可以使用。 For example, the second diagram A to the second diagram G show the state of the three-dimensional complementary conduction band structure of the present invention when applied to a coupling line. The second diagram A to the second diagram D show the structural units at this time, and the second diagram E and the second diagram G show three examples of three-dimensional wiring. For example, Figures 3A to 3D show the oblique, top, side, and front views of this application where the signal line spirals in the horizontal direction. Figures 3E to 3H show the signal line. Spiral wiring in vertical direction. This application is oblique view, top view, side view, and front view. Figures 3 to 3 show the signal cables in a horizontal and vertical directions. Figure, top view, side view and front view. Here, to simplify the illustration, the signal line 120 is represented by a dark pattern, and most two-dimensional mesh metal layers and most two-dimensional mesh connection holes (even the substrate 110) around the signal line are represented by a light-colored pattern. In order to highlight the various three-dimensional routing methods of the signal lines in the three-dimensional complementary conduction band structure of the present invention. In addition, the port 140 is an interface of the external environment of the signal line 120 and the three-dimensional complementary conduction band structure, and the present invention does not limit its details. Any technology or product that is known or in the future can be used.

如這些圖示所示,整個三維互補傳導帶結構可以視為是由多數個結構單元在三維方向堆疊而成,或著可以視為是由多數個結構單元在三維方向堆疊而成並且信號線在這些結構單元內部三維走線。當然,這二種描述方式所指的結構單元稍有不同,前者的結構單元本身就包含了信號線但是後者的結構單元本身並不包含到信號線。無論是那種描述,與習知二維互補傳導帶結構相比較,本發明所提出的三維互補傳導帶結構不只允許一或多信號線的三維走線,而且在同一個平面上(或說在相鄰二層二維網目金屬層間)二或多信號線相互間可以被二維網目連接孔(或甚至部份的網目金屬層)所分隔與屏敝。 As shown in these illustrations, the entire three-dimensional complementary conduction band structure can be regarded as being composed of a plurality of structural units stacked in three dimensions, or it can be regarded as being composed of a plurality of structural units stacked in three dimensions and the signal lines are These structural units are routed internally in three dimensions. Of course, the structural units referred to by these two description methods are slightly different. The former structural unit itself contains signal lines but the latter structural unit itself does not include signal lines. Regardless of the description, compared with the conventional two-dimensional complementary conduction band structure, the three-dimensional complementary conduction band structure proposed by the present invention not only allows three-dimensional routing of one or more signal lines, but also on the same plane (or in other words Between two adjacent two-dimensional mesh metal layers) two or more signal lines may be separated from each other by a two-dimensional mesh connection hole (or even part of the mesh metal layer) and screened.

第四A圖到第四C圖摘要地顯示本發明所提出的三維互補傳導帶結構的結構單元的斜視圖、俯視圖與側視圖(以應用在傳輸線的狀況為樣例,但結構單元的細節也可以應用到耦合線或是其他應用)。金屬層MET1與MET3為二維網目金屬層,金屬層MET2為信號線金屬層,而且各金屬層平面的圓柱形金屬補塊(patch)和鑲嵌於各內金屬介電層的金屬連接孔(via)系用來相互連接不同的金屬層,不論是連接金屬層MET1與金屬層MET3或是連接金屬層MET2與位於另一個結構單元的金屬層。當然,圓柱形金屬補釘僅為舉例,在不同的實施例也可以使用其他形狀的補塊,或者直接將二維網目金屬層與金屬連接孔二者連接在一起而不使用任何的補塊,或是在設計與製造工藝允許的條件下也可以省略不 使用補塊。顯然地,藉由將這樣的結構單元在三維方向上排列組合,可以得到各種三維網格結構130(特別是具有特定週期的三維網格結構130)。顯然地,在這樣的三維互補傳導帶結構,不僅僅可以如同習知的二維互補傳導帶結構,在水平面上的X、Y、-X和-Y這四個方向提供信號線走線,還可以通過垂直方向的金屬連接孔(甚至補塊)提供習知的二維互補傳導帶結構所無法提供的Z和-Z這二個方向的信號線走線。藉此,任一個結構單元中的信號線都可以透過X、Y、Z、-X、-Y和-Z這六個方向的一或多個與其他結構單元中的信號線相互連接,進而形成任意走線的三維信號線。其中,這些圖示的連接臂(connecting arm)呈現了這樣的連接機制。 Figures 4A to 4C summarize the perspective, top, and side views of the structural unit of the three-dimensional complementary conduction band structure proposed by the present invention (taking the application in a transmission line as an example, but the details of the structural unit are also (Can be applied to the coupling line or other applications). The metal layers MET1 and MET3 are two-dimensional mesh metal layers, the metal layer MET2 is a signal line metal layer, and a cylindrical metal patch on each metal layer plane and a metal connection hole embedded in each inner metal dielectric layer (via ) Is used to connect different metal layers to each other, whether it is a metal layer MET1 and a metal layer MET3 or a metal layer MET2 and a metal layer located in another structural unit. Of course, the cylindrical metal nail is only an example. In different embodiments, other shapes of the patch can also be used, or the two-dimensional mesh metal layer and the metal connection hole can be directly connected without using any patch. Or it can be omitted if the design and manufacturing process allows. Use patches. Obviously, by arranging and combining such structural units in the three-dimensional direction, various three-dimensional grid structures 130 (especially the three-dimensional grid structure 130 having a specific period) can be obtained. Obviously, in such a three-dimensional complementary conduction band structure, not only the conventional two-dimensional complementary conduction band structure, but also the signal line routing in the four directions of X, Y, -X and -Y on the horizontal plane, but also The metal connection holes (or even patches) in the vertical direction can provide signal lines in the Z and -Z directions that cannot be provided by the conventional two-dimensional complementary conductive band structure. In this way, the signal lines in any structural unit can be interconnected with the signal lines in other structural units through one or more of the six directions of X, Y, Z, -X, -Y, and -Z, thereby forming A 3D signal line with arbitrary routing. Among these, the illustrated connecting arms (connecting arms) present such a connection mechanism.

如這些圖示所示,三維網格結構130的這些結構單元在水平面上X方向與Y方向上的結構單元週期分別為Px和Py而在垂直的Z方向的結構單元週期為Pz,在水平面的X方向與Y方向還有垂直方向Z方向的大小(或說是網目尺寸)分別為Whx、Why與Whz,並且在水平面的X方向、Y方向與垂直的Z方向的信號線尺寸(像是長度、寬度與厚度)分別為Sx、Sy與Sz。一般來說,三維互補傳導帶結構的設計至少要參考下列幾個因素來確定Px、Py與Pz三者的大小:信號線所需要的特徵阻抗範圍、積體電路製造工藝所能達到的最小線寬與線間距、以及信號線的最大承載電流。此外,Sx、Sy與Sz三者各自的最小尺寸系至少取決於積體電路製造工藝所能達到的極限以及所要求的設計規則(design rule),並且藉由調整Whx、Why與Whz三者以及Sx、Sy與Sz三者也可以改變三維互補傳導帶結 構的特徵阻抗等等。一般來說,商業化的製造工藝往往固定Sz而僅調整Sx與Sy。一般來說,整個三維互補傳導帶結構的每一個結構單元在三個三維方向上的週期與尺寸以及位於其中信號線的尺寸都是相同的,藉以簡化結構與相關制程。但是在不同實施例,或是允許在垂直方向不同層的不同結構單元具有不同的結構單元週期、結構單元尺寸及/或信號線尺寸,或是允許不同的結構單元具有不同的結構單元週期及/或結構單元尺寸,或是允許不同的結構單元具有不同的信號線數目、信號線尺寸及/或信號線分佈方式。 As shown in these illustrations, the structural unit periods of the structural units in the three-dimensional grid structure 130 in the X and Y directions on the horizontal plane are Px and Py, and the structural unit periods in the vertical Z direction are Pz. The sizes (or mesh sizes) in the X and Y directions and in the Z direction in the vertical direction are Whx, Why, and Whz, respectively, and the size of the signal line in the X, Y, and vertical Z directions in the horizontal plane (such as the length , Width and thickness) are Sx, Sy and Sz, respectively. In general, the design of the three-dimensional complementary conduction band structure must at least refer to the following factors to determine the size of Px, Py, and Pz: the characteristic impedance range required for the signal line, and the minimum line that can be achieved by the integrated circuit manufacturing process Width and line spacing, and the maximum current carrying of the signal line. In addition, the minimum size of each of Sx, Sy, and Sz depends on at least the limit that the integrated circuit manufacturing process can reach and the required design rules, and by adjusting Whx, Why, and Whz and Sx, Sy, and Sz can also change the three-dimensional complementary conduction band knot Structural characteristic impedance and so on. In general, commercial manufacturing processes tend to fix Sz and adjust only Sx and Sy. In general, the period and size of each structural unit of the entire three-dimensional complementary conduction band structure in three three-dimensional directions and the size of the signal lines located therein are the same, thereby simplifying the structure and related processes. However, in different embodiments, either different structural units in different layers in the vertical direction are allowed to have different structural unit periods, structural unit sizes and / or signal line sizes, or different structural units are allowed to have different structural unit periods and / Or the structural unit size, or allow different structural units to have different numbers of signal lines, signal line sizes, and / or signal line distribution methods.

與習知的二維互補傳導帶結構相比較,本發明所提出的三維互補傳導帶結構至少有下列幾項優點。第一、更多的設計參數,進一步增加設計靈活性;第二、信號線被三維網格結構所包圍,對信號線的遮蔽效用可減少不同信號線間的相互干擾;第三、三維網格結構有利於散熱,減少運作過程中產生的熱量不能及時散發所導致的雜訊或甚至故障。特別是,由於信號線可以在三維網格結構中任意地三維走線,可以充分的利用基底面積而提升積體電路的密集度。 Compared with the conventional two-dimensional complementary conduction band structure, the three-dimensional complementary conduction band structure proposed by the present invention has at least the following advantages. First, more design parameters further increase design flexibility; second, the signal line is surrounded by a three-dimensional grid structure, and the shielding effect on the signal line can reduce mutual interference between different signal lines; third, the three-dimensional grid The structure is conducive to heat dissipation, reducing the noise or even failure caused by the heat generated during operation cannot be dissipated in time. In particular, since signal lines can be arbitrarily three-dimensionally routed in a three-dimensional grid structure, the area of the substrate can be fully utilized to increase the density of the integrated circuit.

首先,本發明不只可以像習知二維互補傳導帶結構般具有水平面(X與Y二個方向)的信號線尺寸(Sx、Sy)、結構單元週期(Px、Py)與網目尺寸(Wx、Wy)這六個可調整參數,還可以具有垂直方向(Z方向)的信號線尺寸(Sz)、結構單元週期(Pz)與網目尺寸(Wz)這三個可調整參數。因此,本發明可以較習知二維互補傳導帶結構具有更多的可調整參數,進而提供更多的可能調整方式。 當然,不論是在X、Y、Z那個方向,任一個可調整參數的可能調整範圍,皆至少與諸如半導體制程工藝與半導體產品規格等等相關。此外,在X、Y、Z三個方向,這些可調整參數的可能調整範圍系可以各自分別調整。也就是說,視三維互補傳導帶結構的需求(像是視信號線所要傳輸的訊號的頻率與波長),這三個方向的種種參數都可以相對應調整。舉例來說,當這樣的三維互補傳導帶結構被應用來作為三維週期導波結構時,Px、Py與Pz三者的大小需要明顯地小於導波坡長(λ g)。 First, the present invention can not only have the signal line size (Sx, Sy), structural unit period (Px, Py), and mesh size (Wx, Wy) These six adjustable parameters can also have three adjustable parameters: the signal line size (Sz), the structural unit period (Pz), and the mesh size (Wz) in the vertical direction (Z direction). Therefore, the present invention can have more adjustable parameters than the conventional two-dimensional complementary conduction band structure, thereby providing more possible adjustment modes. Of course, whether it is in the X, Y, or Z direction, the possible adjustment range of any adjustable parameter is at least related to, for example, semiconductor process technology and semiconductor product specifications. In addition, in X, Y, and Z directions, the possible adjustment ranges of these adjustable parameters can be adjusted separately. In other words, depending on the requirements of the three-dimensional complementary conduction band structure (such as the frequency and wavelength of the signal to be transmitted by the signal line), various parameters in these three directions can be adjusted accordingly. For example, when such a three-dimensional complementary conduction band structure is applied as a three-dimensional periodic guided wave structure, the sizes of Px, Py, and Pz need to be significantly smaller than the guided wave slope length (λ g).

其次,相較于習知二維互補傳導帶結構,信號線只有在垂直方向的上面及/或下面受到這些二維網目金屬層的遮蔽(這些二維網目金屬層往往接地),本發明的三維互補傳導帶結構不只可以透過這些水平面的二維網目金屬層來遮蔽信號線,還可以透過連接這些二維網目金屬層的二維網目連接孔來遮蔽信號線。因此,不同結構單元間信號線可以在三維的三個方向都被遮蔽隔離,進而減少位於不同結構單元的一或多信號線間的相互干擾。 Secondly, compared to the conventional two-dimensional complementary conduction band structure, the signal lines are only shielded by these two-dimensional mesh metal layers in the vertical direction above and / or below (these two-dimensional mesh metal layers are often grounded). The complementary conductive band structure can not only shield the signal lines through the two-dimensional mesh metal layers on these horizontal planes, but also cover the signal lines through the two-dimensional mesh connection holes connecting these two-dimensional mesh metal layers. Therefore, the signal lines between different structural units can be shielded and isolated in three directions in three dimensions, thereby reducing mutual interference between one or more signal lines located in different structural units.

再者,由於金屬是熱的良好導體,當三維互補傳導帶結構的結構單元中信號線在水準與垂直的X、Y、Z三個方向都被金屬所圍繞(不論是二維網目金屬層的金屬或是二維網目連接孔的金屬),特別是當這些金屬都接地,本發明可以較習知二維互補傳導帶結構更有效率地將出現在信號線的熱傳導離開整個三維互補傳導帶結構。因此,當將信號線電性連接到有源器件(active device)與大功率元件(high-power component),本發明的三維互補傳 導帶結構可以較習知二維互補傳導帶結構更有效地減少產生在信號線的熱使得整個積體電路中某些元件因為過熱而出現過多雜訊或甚至失效的機率。 Furthermore, since metal is a good conductor of heat, when the signal line in the structural unit of the three-dimensional complementary conduction band structure is surrounded by the metal in the horizontal and vertical X, Y, and Z directions (regardless of the two-dimensional mesh metal layer) Metal or metal of two-dimensional mesh connection holes), especially when these metals are grounded, the present invention can more efficiently conduct heat conduction occurring in signal lines away from the entire three-dimensional complementary conductive band structure than the conventional two-dimensional complementary conductive band structure . Therefore, when the signal line is electrically connected to an active device and a high-power component, the three-dimensional complementary transmission of the present invention The conduction band structure can more effectively reduce the probability that the heat generated in the signal line causes some components in the integrated circuit to cause excessive noise or even failure due to overheating than the conventional two-dimensional complementary conduction band structure.

特別是,為了避免某二條信號線相互接觸(或過於鄰近)時所引發的短路或雜訊的問題,習知二維互補傳導帶結構必須將某一條信號線在二維平面上迂回繞過另一條信號線,但是本發明所提出的三維互補傳導帶結構可以讓任一條信號線自另一條信號線的上方或下方跨越過去。因此,本發明可以省略信號線在相同平面上迂回走線所額外佔用的基底面積,進而提升使用本發明的積體電路的密集度。 In particular, in order to avoid the problem of short circuit or noise caused when two signal lines are in contact with each other (or too close), the conventional two-dimensional complementary conduction band structure must bypass one signal line on the two-dimensional plane and bypass the other. One signal line, but the three-dimensional complementary conduction band structure proposed by the present invention can allow any signal line to cross over from another signal line. Therefore, the present invention can omit the additional area of the substrate occupied by the signal lines on the same plane, and further increase the density of the integrated circuit using the present invention.

舉例來說,第五A圖到第五C圖摘要地顯示為何本發明可以較習知二維互補傳導帶結構節省基底面積與提升密集度,其中必須強調地是走線方式與應用在傳輸線或耦合線無關,亦即這些圖示所顯示的本發明優點並不只對傳輸線這樣的應用有效。第五A圖顯示需要連接的元件(或說端點)的分佈,在此A1、B1、C1與D1要透過不同信號線分別連接到A2、B2、C2與D2。第五B圖顯示使用習知二維互補傳導帶結構時信號線的走線方式,在此這些信號線只有一半是在水平面上直線地在兩個元件間走線,而另外一半的信號線是在水平面上迂回繞過直線走線的這一半信號線來在另二個組件間走線。如圖所示,在這個樣例中所佔用的基底面積在水平面上X方向與Y方向的邊長分別為五個結構單元與六個結構單元。第五C圖顯示在使用本發明三維互補傳導帶結構時信號線 的走線方式,在此任一信號線在水平面上都是直線地在兩個元件間走線,但是有一半的信號是透過垂直走線移動到其它水平面進行走線來繞過只在同一水平面水準走線的另外一半信號線。如圖所示,在這個樣例中所佔用的基底面積在水平面上X方向與Y方向的邊長分別為四個結構單元與五個結構單元。顯然地,三維互補傳導帶結構可以減少所使用的基底面積並進而提升密集度。在此,為簡化圖示,只畫出信號線120與三維網格結構130。 For example, Figures 5A to 5C show in summary why the present invention can save substrate area and increase density compared to the conventional two-dimensional complementary conduction band structure. Among them, the routing method and application in transmission lines or The coupling lines are irrelevant, that is, the advantages of the present invention shown in these figures are not only valid for applications such as transmission lines. The fifth A diagram shows the distribution of components (or endpoints) to be connected. Here, A1, B1, C1, and D1 are connected to A2, B2, C2, and D2 through different signal lines, respectively. Figure 5B shows how the signal lines are routed when using the conventional two-dimensional complementary conduction band structure. Here, only half of these signal lines are linearly routed between two components on the horizontal plane, and the other half of the signal lines are On the horizontal plane, this half of the signal line is routed around the straight line to route between the other two components. As shown in the figure, the sides of the base area occupied in this example in the X direction and Y direction on the horizontal plane are five structural units and six structural units, respectively. Figure 5C shows the signal line when using the three-dimensional complementary conduction band structure of the present invention In this way, any signal line is straightly routed between the two components on the horizontal plane, but half of the signal is moved to the other horizontal plane through the vertical wiring to bypass the route only on the same horizontal plane. Level the other half of the signal line. As shown in the figure, the sides of the base area occupied in this example in the X direction and the Y direction on the horizontal plane are four structural units and five structural units, respectively. Obviously, the three-dimensional complementary conduction band structure can reduce the substrate area used and thus increase the density. Here, to simplify the illustration, only the signal lines 120 and the three-dimensional grid structure 130 are drawn.

舉例來說,第五D圖到第五I圖顯示了另外一些樣例。其中,第五D圖與第五E圖顯示所有信號線都在同一個平面上的狀況(位於兩個二維網目金屬層間),第五F圖與第五G圖顯示所有信號線分佈在上下二個平面的狀況(交錯地位於三個二維網目金屬層間),而第五H圖與第五I圖顯示所有信號線分佈在上下共四個平面的狀況(交錯地位於五個二維網目金屬層間)。顯然地,當信號線在上下二個平面走線時,可以較只在某個平面走線時節省大約百分四十五的基底面積,而當信號線在上下共四個平面走線時可以更進一步節省到百分七十的基底面積。在此,為簡化圖示,只畫出信號線120與三維網格結構130。 For example, the fifth D to fifth I pictures show some other examples. Among them, the fifth D and fifth E graphs show that all signal lines are on the same plane (between two two-dimensional mesh metal layers), and the fifth F and fifth G graphs show that all signal lines are distributed above and below The condition of two planes (interlacedly located between three two-dimensional mesh metal layers), and the fifth and fifth images H and I show the situation where all signal lines are distributed on four planes (interlacedly located on five two-dimensional meshes) Between metal layers). Obviously, when the signal line is routed on the upper and lower two planes, it can save about 45 percent of the base area than when the signal line is routed on only one plane. Further saving to 70% of the substrate area. Here, to simplify the illustration, only the signal lines 120 and the three-dimensional grid structure 130 are drawn.

簡言之,雖未特別圖示需要連接的元件數目更多時或是元件在基底上分佈方式更複雜時的狀況,由於數目越多與分佈越複雜時在同一平面上信號線需要迂回走線來避免相互接觸的需求會越多與越複雜,因此本發明的三維互補傳導帶結構的優點在需要連接的元件數目越多與分佈越複雜時將會更明顯。 In short, although it is not particularly shown when the number of components to be connected is larger or the distribution of components on the substrate is more complicated, the signal lines need to be routed on the same plane when the number is greater and the distribution is more complicated. The more and more complex the need to avoid mutual contact, the advantages of the three-dimensional complementary conductive band structure of the present invention will become more apparent when the number of components to be connected is more complex.

進一步地,本發明的三維互補傳導帶結構還較習知二維互補傳導帶結構具有較多可調整參數,不只有利於在不同結構單元間得到較好的隔離/散熱以及有利於在諸如傳輸線與耦合線等狀況時信號線的走線,也有利於配合晶圓廠制程等等予以調整來提高特徵阻抗與品質因素二者並減少對慢波係數的影響。 Further, the three-dimensional complementary conduction band structure of the present invention has more adjustable parameters than the conventional two-dimensional complementary conduction band structure, which is not only conducive to obtaining better isolation / heat dissipation between different structural units, but also is beneficial to such as transmission lines and The routing of signal lines under conditions such as coupling lines is also conducive to adjusting with the fab process to improve both the characteristic impedance and quality factors and reduce the impact on the slow wave coefficient.

舉例來說,當本發明的三維互補傳導帶結構被應用在微波毫米波積體電路時,其可以支援准橫向電磁波傳輸模式並且可以較種種習知技術更能減少信號線走線方式(像是彎折走線)對於傳播常數(γ)和特徵阻抗的影響。如眾所皆知,複數傳播常數(γ)可以表示為γ=α+,其中為α衰減常數而β為相位常數。可以通過對任一作為傳輸線用的具有二端的信號線的S參數計算得到這條傳輸線的特徵阻抗、衰減常數(α)、相位常數(β)和品質因素。相關的計算公式分別如下: 如眾所皆知,理想狀態下傳輸線的特徵阻抗與慢波係數並不會隨著被傳輸訊號的頻率變化而變化,而且品質因素系在被傳輸訊號的四分之一波長的範圍內正比例於被傳輸訊號的頻率。 For example, when the three-dimensional complementary conduction band structure of the present invention is applied to a microwave millimeter wave integrated circuit, it can support a quasi-transverse electromagnetic wave transmission mode and can reduce the signal line routing mode (such as Bend traces) on the propagation constant (γ) and characteristic impedance. As is well known, the complex propagation constant (γ) can be expressed as γ = α + , where α is the attenuation constant and β is the phase constant. The characteristic impedance, attenuation constant (α), phase constant (β), and quality factor of this transmission line can be obtained by calculating the S-parameters of any signal line with two ends as a transmission line. The relevant calculation formulas are as follows: As everyone knows, in the ideal state, the characteristic impedance and slow wave coefficient of the transmission line do not change with the frequency of the transmitted signal, and the quality factor is proportional to the quarter wavelength of the transmitted signal. The frequency of the transmitted signal.

舉例來說,第六A圖顯示一種應用本發明的三維互補傳導帶結構的單根傳輸線狀況而第六B圖到第六D圖分別顯示在此 狀況下特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係的模擬計算結果。第六E圖顯示一種應用本發明的三維互補傳導帶結構的單根彎折線狀況而第六F圖到第六H圖分別顯示在此狀況下特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係的模擬計算結果。顯然地,特徵阻抗的實數部分(Re(ZC))與虛數部分(Im(ZC))還有衰減常數與相位常數,基本上都不會隨著頻率改變而改變,特別是當頻率高於15GHz時,而且品質因素與頻率大致呈固定的線性比例,特別是當頻率高於10~15GHz時。換句話說,模擬計算結果顯示本發明可以讓每一個單元中特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係逼近理想狀態。 For example, the sixth diagram A shows the condition of a single transmission line to which the three-dimensional complementary conduction band structure of the present invention is applied, and the sixth diagram B to the sixth diagram D respectively show characteristic impedance, slow wave coefficient and quality factor three under this condition. The result of simulation calculation of the relationship between the transmitter and the frequency of the transmitted signal. The sixth E diagram shows a single bending line condition of the three-dimensional complementary conductive band structure to which the present invention is applied, and the sixth F to sixth H diagrams respectively show the characteristic impedance, the slow wave coefficient, and the quality factor in this condition. Result of simulation calculation of transmission signal frequency. Obviously, the real part (Re (Z C )) and imaginary part (Im (Z C )) of the characteristic impedance, as well as the attenuation constant and phase constant, basically do not change with frequency, especially when the frequency is high. At 15GHz, the quality factor and frequency are approximately constant linear proportions, especially when the frequency is higher than 10 ~ 15GHz. In other words, the simulation calculation results show that the present invention can make the relationship between the characteristic impedance, the slow wave coefficient and the quality factor of each unit and the frequency of the transmitted signal close to the ideal state.

舉例來說,在1-10GHz的頻率範圍中,第六I圖到第六K圖顯示第三A圖到第三D圖所顯示的信號線在水準方向上螺旋走線這種應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果,第六L圖到第六N圖顯示第三E圖到第三H圖所顯示的信號線在垂直方向上螺旋走線這種應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果,而第六O圖到第六Q圖顯示第三I圖到第三L圖所顯示的信號線在水準方向與垂直方向上螺旋走線這種應用的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率關係的模擬計算結果。顯然地,不論是在那種三維走線的狀況,模擬結果都顯示特徵阻抗的實數部分與虛數部分還有衰減常數、相位常數與品質因素三者,基本上都不大會隨著頻率改變而改變,特別是不會有突然的起伏變化而頂多 在高頻率或低頻率二個極端逐漸地隨頻率的增加或減少而略為地增加或減少。換句話說,模擬計算結果顯示本發明可以讓在三維互補傳導帶結構中的三維走線的特徵阻抗、慢波係數與品質因素三者與被傳輸訊號頻率的關係逼近理想狀態。 For example, in the frequency range of 1-10GHz, the sixth I to sixth K diagrams show the characteristic impedance of the application where the signal lines shown in third A to third D spirally run in the horizontal direction. The simulation calculation results of the relationship between the three, the slow wave coefficient and the quality factor and the frequency of the transmitted signal. The sixth L to sixth N diagrams show that the signal lines shown in the third E to third H spiral spiral in the vertical direction. The simulation results of the relationship between the characteristic impedance, slow wave coefficient and quality factor of this application and the frequency of the transmitted signal, and the sixth O to sixth Q diagrams show the third I to third L diagrams. The simulation results of the relationship between the characteristic impedance, slow wave coefficient, and quality factor of the application of the signal line spiraling in the horizontal and vertical directions and the frequency of the transmitted signal. Obviously, no matter in the three-dimensional routing situation, the simulation results show that the real and imaginary parts of the characteristic impedance, as well as the attenuation constant, phase constant, and quality factor, basically do not change with frequency. , Especially without sudden fluctuations at most At the extremes of high frequency or low frequency, it gradually increases or decreases with increasing or decreasing frequency. In other words, the simulation calculation results show that the present invention can approximate the relationship between the characteristic impedance, slow wave coefficient, and quality factor of the three-dimensional wiring in the three-dimensional complementary conduction band structure and the frequency of the transmitted signal to an ideal state.

顯然地,本發明可能有許多的修正與差異,因此需在附加的權利請求項的範圍內加以理解。除上述詳細描述外,本發明還可以廣泛地在其他實施例中施行。上述僅為本發明較佳實施例而已,並非用以限定本發明的申請專利範圍;凡其它未脫離本發明所揭示的精神下所完成的等效改變或修飾,均應包含在下述申請專利範圍內。 Obviously, the present invention may have many amendments and differences, so it needs to be understood within the scope of the appended claims. In addition to the above detailed description, the present invention can be widely implemented in other embodiments. The above are only preferred embodiments of the present invention, and are not intended to limit the scope of patent application of the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention should be included in the scope of patent application described below Inside.

Claims (19)

一種三維互補傳導帶結構,包含:多數個二維網目金屬層,在垂直於基底表面方向上相互堆疊;多數個二維網目連接孔,分別在垂直於基底表面方向上連接這些二維網目金屬層:多數個信號線金屬層,在垂直於基底表面方向上相互堆疊並與這些二維網目金屬層交錯排列:以及多數個信號線連接孔,分別在垂直於基底表面方向上連接這些信號線金屬層:在此,任一二維網目金屬層皆為具有一或多個簍空區域的平面金屬層,這些二維網目金屬層與這些二維網目連接孔共同形成一個三維網格結構;在此,任一信號線金屬層皆為平行基底表面的一或多金屬線,這些信號線金屬層與這些信號線連接孔共同形成一或多信號線;在此,任一信號線皆與三維網格結構與其它信號線都相互分離,並且任一信號線皆可以在這個三維網格結構中三維走線。A three-dimensional complementary conductive belt structure includes: a plurality of two-dimensional mesh metal layers stacked on each other in a direction perpendicular to the surface of the substrate; a plurality of two-dimensional mesh connection holes connecting the two-dimensional mesh metal layers in a direction perpendicular to the substrate surface : Most signal line metal layers are stacked on top of each other in a direction perpendicular to the substrate surface and staggered with these two-dimensional mesh metal layers: and a plurality of signal line connection holes are connected to these signal line metal layers in a direction perpendicular to the substrate surface. : Here, any two-dimensional mesh metal layer is a flat metal layer with one or more empty areas. These two-dimensional mesh metal layers and these two-dimensional mesh connection holes together form a three-dimensional grid structure. Here, Any signal line metal layer is one or more metal lines parallel to the surface of the substrate. These signal line metal layers and these signal line connection holes together form one or more signal lines. Here, any signal line is in a three-dimensional grid structure. It is separated from other signal lines, and any signal line can be routed three-dimensionally in this three-dimensional grid structure. 如申請專利範圍第1項所述的三維互補傳導帶結構,這個三維網格結構為多數個結構單元的三維排列,在此任一個結構單元在垂直基底表面的Z方向的二側為相鄰二個二維網目金屬層而在平行基底表面方向的X方向與Y方向分別的二側皆由相鄰二個二維網目連接孔所限定。According to the three-dimensional complementary conduction band structure described in the first item of the patent application scope, this three-dimensional grid structure is a three-dimensional arrangement of a plurality of structural units, where any one structural unit is adjacent to two sides in the Z direction of the vertical base surface. Two two-dimensional mesh metal layers and two sides in the X direction and the Y direction parallel to the surface direction of the substrate are defined by two adjacent two-dimensional mesh connection holes. 如申請專利範圍第2項所述的三維互補傳導帶結構,至少一個下列專案是任一個結構單元的可調整參數:X方向信號線尺寸(Sx)、Y方向信號線尺寸(Sy)、Z方向信號線尺寸(Sz)、X方向結構單元週期(Px)、Y方向結構單元週期(Py)、Z方向結構單元週期(Pz)、X方向網目尺寸(Wx)、Y方向網目尺寸(Wy)、與Z方向網目尺寸(Wz)。According to the three-dimensional complementary conduction band structure described in item 2 of the scope of patent application, at least one of the following items is an adjustable parameter of any structural unit: X-direction signal line size (Sx), Y-direction signal line size (Sy), Z direction Signal line size (Sz), X-direction structural unit period (Px), Y-direction structural unit period (Py), Z-direction structural unit period (Pz), X-direction mesh size (Wx), Y-direction mesh size (Wy), And Z direction mesh size (Wz). 如申請專利範圍第2項所述的三維互補傳導帶結構,在任一個結構單元中可以有一或多信號線。According to the three-dimensional complementary conduction band structure described in item 2 of the scope of patent application, there may be one or more signal lines in any one structural unit. 如申請專利範圍第2項所述的三維互補傳導帶結構,在任一個結構單元中這些信號線的可能走線至少有下列幾種:水準方向上單根走線、水準方向上彎折走線、垂直方向上單根走線、垂直方向上彎折走線。For example, the three-dimensional complementary conduction band structure described in item 2 of the scope of patent application, the possible routing of these signal lines in any structural unit is at least the following: a single wiring in the horizontal direction, a bent wiring in the horizontal direction, Single wire in the vertical direction and bent wire in the vertical direction. 如申請專利範圍第2項所述的三維互補傳導帶結構,在任一個結構單元這些信號線的可能走線至少有下列幾種:水準方向上雙根平行走線、垂直方向上雙根平行走線、水準方向上的耦合線結構、垂直方向上的耦合線結構、水準方向上兩條並排穿梭、垂直方向上兩條並排穿梭、三或更多條信號線分別通過。According to the three-dimensional complementary conduction band structure described in the second item of the patent application scope, at least one of the possible routings of these signal lines in any structural unit is as follows: two parallel parallel lines in the horizontal direction, and two parallel parallel lines in the vertical direction. , The coupling line structure in the horizontal direction, the coupling line structure in the vertical direction, two side-by-side shuttles in the horizontal direction, two side-by-side shuttles in the vertical direction, and three or more signal lines pass respectively. 如申請專利範圍第2項所述的三維互補傳導帶結構,在任一個結構單元這些信號線的可能輪廓至少有下列幾種:直線形狀、L型形狀、T型形狀、十字型形狀、五條直線相互連接或是六條直線相互連接。According to the three-dimensional complementary conduction band structure described in the second item of the patent application scope, the possible contours of these signal lines in any structural unit are at least the following: straight shape, L shape, T shape, cross shape, five straight lines Connected or six straight lines are connected to each other. 如申請專利範圍第1項所述的三維互補傳導帶結構,在垂直於基底表面方向上這些信號線系通過這些簍空區域,在平行於基底表面方向上這些信號線系通過這些二維網目連接孔間的空隙。According to the three-dimensional complementary conduction band structure described in item 1 of the scope of patent application, the signal lines pass through the empty areas in a direction perpendicular to the substrate surface, and the signal lines are connected through the two-dimensional meshes in a direction parallel to the substrate surface. Gap between holes. 如申請專利範圍第1項所述的三維互補傳導帶結構,更包含多數個內金屬介電質層,任一個內金屬介電質層系位於相鄰的二維網目金屬層與信號線金屬層間。The three-dimensional complementary conductive band structure described in item 1 of the patent application scope further includes a plurality of inner metal dielectric layers, and any one of the inner metal dielectric layers is located between the adjacent two-dimensional mesh metal layer and the signal line metal layer. . 如申請專利範圍第1項所述的三維互補傳導帶結構,更包含下列之一:這些二維網目金屬層最下面一個直接與基底接觸;以及這些信號線金屬層最下面一個直接與基底接觸。The three-dimensional complementary conductive band structure described in item 1 of the patent application scope further includes one of the following: the bottom of the two-dimensional mesh metal layer is directly in contact with the substrate; and the bottom of the signal line metal layer is directly in contact with the substrate. 如申請專利範圍第1項所述的三維互補傳導帶結構,更包含至少下列之一:這個三維網格結構接地;以及這些信號線分別電性分別連接到位於基底的多數個元件及/或端點。The three-dimensional complementary conduction band structure described in item 1 of the scope of patent application, further includes at least one of the following: the three-dimensional grid structure is grounded; and the signal lines are electrically connected to a plurality of components and / or terminals on the substrate, respectively. point. 一種三維互補傳導帶結構,包含:一三維網格結構,具有多數個結構單元;以及一或多信號線,在這個三維網格結構內部三維走線;在此,這些結構單元系三維排列在一基底上;在此,任一個結構單元皆具有至少一簍空區域;在此,這些信號線系經由這些結構單元的這些簍空區域在這些結構單元三維走線;在此,任一個結構單元中可以有一或多信號線;在此,任一信號線與三維網格結構和其他信號線皆相互分離在此,三維網格結構包含上下相互堆疊的二或多個二維網目金屬層,在此每個二維網目金屬層都是具有一或多個簍空區域的平面金屬層,在此這些二維網目金屬層系透過多數個二維網目連接孔相互連接。A three-dimensional complementary conduction band structure includes: a three-dimensional grid structure with a plurality of structural units; and one or more signal lines, which are three-dimensionally routed within the three-dimensional grid structure; here, these structural units are arranged three-dimensionally in a On the substrate; here, any structural unit has at least one empty area; here, these signal lines are routed in three dimensions through the empty areas of the structural units in these structural units; here, in any structural unit There can be one or more signal lines; here, any signal line is separated from the three-dimensional grid structure and other signal lines ; here, the three-dimensional grid structure includes two or more two-dimensional mesh metal layers stacked on top of each other. Each of the two-dimensional mesh metal layers is a planar metal layer having one or more empty areas. Here, the two-dimensional mesh metal layers are connected to each other through a plurality of two-dimensional mesh connection holes. 如申請專利範圍第12項所述的三維互補傳導帶結構,任一個結構單元在垂直基底表面的Z方向的二側為相鄰二個二維網目金屬層而在平行基底表面方向的X方向與Y方向分別的二側皆由相鄰二個二維網目連接孔所限定。According to the three-dimensional complementary conduction band structure described in item 12 of the patent application scope, any structural unit is adjacent to two two-dimensional mesh metal layers on two sides in the Z direction of the vertical substrate surface, and is in the X direction parallel to the substrate surface direction. The two sides in the Y direction are defined by two adjacent two-dimensional mesh connection holes. 如申請專利範圍第12項所述的三維互補傳導帶結構,至少下列一項是任一個結構單元的可調整參數:X方向信號線尺寸(Sx)、Y方向信號線尺寸(Sy)、Z方向信號線尺寸(Sz)、X方向結構單元週期(Px)、Y方向結構單元週期(Py)、Z方向結構單元週期(Pz)、X方向網目尺寸(Wx)、Y方向網目尺寸(Wy)、與Z方向網目尺寸(Wz)。For example, the three-dimensional complementary conductive band structure described in item 12 of the patent application scope, at least one of the following is an adjustable parameter of any structural unit: X-direction signal line size (Sx), Y-direction signal line size (Sy), Z direction Signal line size (Sz), X-direction structural unit period (Px), Y-direction structural unit period (Py), Z-direction structural unit period (Pz), X-direction mesh size (Wx), Y-direction mesh size (Wy), And Z direction mesh size (Wz). 如申請專利範圍第12項所述的三維互補傳導帶結構,在任一個結構單元中這些信號線的可能走線至少有下列幾種:水準方向上單根走線、水準方向上彎折走線、垂直方向上單根走線、垂直方向上彎折走線。For example, the three-dimensional complementary conductive band structure described in item 12 of the scope of patent application, there are at least the following possible traces of these signal lines in any structural unit: a single trace in the horizontal direction, a curved trace in the horizontal direction, Single wire in the vertical direction and bent wire in the vertical direction. 如申請專利範圍第12項所述的三維互補傳導帶結構,在任一個結構單元這些信號線的可能走線至少有下列幾種:水準方向上雙根平行走線、垂直方向上雙根平行走線、水準方向上的耦合線結構、垂直方向上的耦合線結構、水準方向上兩條並排穿梭、垂直方向上兩條並排穿梭、三或更多條信號線分別通過。According to the three-dimensional complementary conduction band structure described in the patent application No. 12, there may be at least the following types of possible signal lines in any structural unit: two parallel parallel lines in the horizontal direction, and two parallel parallel lines in the vertical direction. , The coupling line structure in the horizontal direction, the coupling line structure in the vertical direction, two side-by-side shuttles in the horizontal direction, two side-by-side shuttles in the vertical direction, and three or more signal lines pass respectively. 申請專利範圍第12項所述的三維互補傳導帶結構,在任一個結構單元這些信號線的可能輪廓至少有下列幾種:直線形狀、L型形狀、T型形狀、十字型形狀、五條直線相互連接或是六條直線相互連接。The three-dimensional complementary conductive band structure described in item 12 of the scope of the patent application. The possible contours of these signal lines in any structural unit are at least the following: straight shape, L shape, T shape, cross shape, and five straight lines connected to each other. Or six straight lines are connected to each other. 如申請專利範圍第12項所述的三維互補傳導帶結構,更包含至少下列之一:在每一個結構單元中任一條信號線皆與結構單元的各個邊緣都相互分離;以及圍繞三維網格結構的介電質材料,其系用以將三維網格結構與任一信號線都相互電性隔離。The three-dimensional complementary conduction band structure described in item 12 of the patent application scope further includes at least one of the following: each signal line in each structural unit is separated from each edge of the structural unit; and the three-dimensional grid structure surrounds Dielectric material, which is used to electrically isolate the three-dimensional grid structure from any signal line. 如申請專利範圍第12項所述的三維互補傳導帶結構,更包含至少下列之一:三維網格結構系為接地;以及這些信號線分別電性分別連接到位於基底的多數個元件及/或端點。The three-dimensional complementary conductive band structure according to item 12 of the scope of patent application, further comprising at least one of the following: the three-dimensional grid structure is grounded; and the signal lines are electrically connected to a plurality of components on the substrate and / or Endpoint.
TW106111776A 2017-04-07 2017-04-07 Three-dimentsional complementary-conducting-strip structure TWI665781B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW106111776A TWI665781B (en) 2017-04-07 2017-04-07 Three-dimentsional complementary-conducting-strip structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW106111776A TWI665781B (en) 2017-04-07 2017-04-07 Three-dimentsional complementary-conducting-strip structure

Publications (2)

Publication Number Publication Date
TW201838145A TW201838145A (en) 2018-10-16
TWI665781B true TWI665781B (en) 2019-07-11

Family

ID=64797134

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106111776A TWI665781B (en) 2017-04-07 2017-04-07 Three-dimentsional complementary-conducting-strip structure

Country Status (1)

Country Link
TW (1) TWI665781B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201019815A (en) * 2008-11-04 2010-05-16 Ching-Kuang Tzuang Mutilayer complementary-conducting-strip transmission line structure
TW201019814A (en) * 2008-11-04 2010-05-16 Ching-Kuang Tzuang Complementary-conducting-strip transmission line structure
TW201023712A (en) * 2008-12-15 2010-06-16 Ching-Kuang Tzuang Complementary-conducting-strip coupled line

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201019815A (en) * 2008-11-04 2010-05-16 Ching-Kuang Tzuang Mutilayer complementary-conducting-strip transmission line structure
TW201019814A (en) * 2008-11-04 2010-05-16 Ching-Kuang Tzuang Complementary-conducting-strip transmission line structure
TW201023712A (en) * 2008-12-15 2010-06-16 Ching-Kuang Tzuang Complementary-conducting-strip coupled line

Also Published As

Publication number Publication date
TW201838145A (en) 2018-10-16

Similar Documents

Publication Publication Date Title
US7414201B2 (en) Transmission line pair
US5682124A (en) Technique for increasing the range of impedances for circuit board transmission lines
JP4880666B2 (en) Circuit board
US8354975B2 (en) Electromagnetic band gap element, and antenna and filter using the same
US10164310B2 (en) High-frequency transmission line
TWI678839B (en) Microstrip-waveguide transition for transmitting electromagnetic signals
US20100182105A1 (en) Impedance-controlled coplanar waveguide system for the three-dimensional distribution of high-bandwidth signals
JP2000507427A (en) Bidirectional, non-solid, impedance-controlled reference plane
US8106721B2 (en) Multilayer complementary-conducting-strip transmission line structure with plural interlaced signal lines and mesh ground planes
US9967968B2 (en) 3D EMI suppression structure and electronic device having the same
JP3397707B2 (en) Substrate with shield plane with various aperture patterns for transmission time and impedance control
US6781236B2 (en) Semiconductor device using a multilayer wiring structure
CN114006139B (en) HTCC-based ultra-wideband millimeter wave vertical interconnection structure
JP6189732B2 (en) Antenna device
CN104685703B (en) Structure and distributing board
TWI665781B (en) Three-dimentsional complementary-conducting-strip structure
KR20150025706A (en) Structure of a slow-wave microstrip line with high Q factor and a shorter wavelength
US6784531B2 (en) Power distribution plane layout for VLSI packages
US9978699B1 (en) Three-dimensional complementary-conducting-strip structure
Howard et al. A multipipe model of general strip transmission lines for rapid convergence of integral equation singularities
US7674988B2 (en) Shielded circuit board and method for shielding a circuit board
US20180270949A1 (en) Circuit board and electronic device
CN108695583A (en) Three-dimensional complementary conducts band structure
US8399965B2 (en) Layer structure with EMI shielding effect
JP4471281B2 (en) Multilayer high frequency circuit board