TWI665729B - 用於減少腔室微粒之重大腔室部件表面改良 - Google Patents

用於減少腔室微粒之重大腔室部件表面改良 Download PDF

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TWI665729B
TWI665729B TW104103610A TW104103610A TWI665729B TW I665729 B TWI665729 B TW I665729B TW 104103610 A TW104103610 A TW 104103610A TW 104103610 A TW104103610 A TW 104103610A TW I665729 B TWI665729 B TW I665729B
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heat
glass
minute
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chamber
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段仁官
羅莎亞凡利斯君卡洛斯
山卡克里西南蘭普拉卡西
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美商應用材料股份有限公司
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Abstract

本文描述的實施例大體而言係關於用於熱處理紫外線半導體處理腔室中使用的腔室部件之設備和方法。包含單一陶瓷或玻璃物件的腔室部件之熱處理可以減少腔室部件曝露於腐蝕性環境、例如曝露於紫外光和臭氧/氧自由基時產生微粒的可能性。一種熱處理腔室部件的方法包括以可接受的升降溫速率將單一物件加熱到所需的溫度持續所需的期間，並於隨後以該升降溫速率冷卻該單一物件。

Description

用於減少腔室微粒之重大腔室部件表面改良
本文所述之實施例大體而言係關於用於紫外線(UV)半導體處理腔室的單一陶瓷物件之熱處理。
在半導體工業中，元件是由若干製造製程所製造的，該等製造製程生產尺寸不斷減小的結構。一些製造製程，例如紫外線固化製程和臭氧(O3)清潔製程，使各種腔室部件曝露於可能侵蝕處理腔室或腔室部件表面的腐蝕性環境。腐蝕可能產生微粒，該等微粒經常會污染正在生產的元件。
隨著元件幾何尺寸的縮小，缺陷的易生性提高，而且微粒污染物的要求越來越嚴格。因此，允許的微粒污染物水平可能會降低。為了最少化由紫外線和臭氧照射引入的微粒污染物，已經開發出通常耐腐蝕性紫外線和臭氧環境的腔室材料。這種材料的實例包括由Al2O3、AlN、SiC、Y2O3、石英、ZrO2、及類似物所組成的陶瓷。然而，這些陶瓷材料的耐腐蝕性對於某些微粒污染物在元件功能性上扮演顯著角色的應用可能是不足的。各種用以從腔室部件去除微粒的清 潔技術(例如使用酸的濕清潔)在去除微粒並進一步防止微粒產生到確保無缺陷元件製造所需的程度上也可能是無效的。
因此，本技術領域中需要的是使腔室部件具有在腐蝕性環境中減少微粒產生的理想性質之設備和方法。
在一個實施例中，提供一種熱處理紫外線腔室部件的方法。該方法包含提供單一陶瓷物件並以介於約0.1℃/分鐘和約20℃/分鐘之間的第一升降溫速率將該單一陶瓷物件加熱到介於約1000℃和約1800℃之間的溫度範圍。將該單一陶瓷物件熱處理持續介於約0.5小時和約24小時之間的持續時間，並以介於約0.1℃/分鐘和約20℃/分鐘之間的第二升降溫速率冷卻該單一陶瓷物件。
在另一個實施例中，提供一種熱處理紫外線腔室部件的方法。該方法包含提供單一玻璃物件並以介於約0.1℃/分鐘和約20℃/分鐘之間的第一升降溫速率將該單一玻璃物件加熱到介於約1000℃和約1800℃之間的溫度範圍。將該單一玻璃物件熱處理持續介於約0.5小時和約24小時之間的持續時間，並以介於約0.1℃/分鐘和約20℃/分鐘之間的第二升降溫速率冷卻該單一玻璃物件。
在又另一個實施例中，提供經熱處理的紫外線腔室部件。該經熱處理紫外線腔室部件係藉由一種方法製備，該方法包含提供單一陶瓷或玻璃物件並以介於約0.1℃/分鐘和約20℃/分鐘之間的第一升降溫速率將該單一陶瓷或玻璃物 件加熱到介於約1000℃和約1800℃之間的溫度範圍。將該單一陶瓷或玻璃物件熱處理持續介於約0.5小時和約24小時之間的持續時間，並以介於約0.1℃/分鐘和約20℃/分鐘之間的第二升降溫速率冷卻該單一陶瓷或玻璃物件。
100‧‧‧紫外線腔室
102‧‧‧腔室主體
104‧‧‧腔室部件
106‧‧‧氣體輸送裝置
108‧‧‧腐蝕性環境
110‧‧‧氣源
112‧‧‧紫外線光源
114‧‧‧處理區域
200‧‧‧方法
210-240‧‧‧操作
302-310‧‧‧顯微照片
312‧‧‧微粒
402-430‧‧‧顯微照片
502-510‧‧‧顯微照片
602-630‧‧‧顯微照片
為詳細瞭解上述本揭示之特徵，可參照實施例(其中一些圖示於附圖中)而對以上簡要概述的本揭示作更特定的描述。然而，應注意的是，附圖僅圖示本揭示之典型實施例，因此不應將該等附圖視為限制本揭示之範圍，因本揭示可認可其它等同有效的實施例。
第1圖圖示依據本文描述的一個實施例的紫外線半導體處理腔器之示意性剖面圖。
第2圖圖示依據本文描述的一個實施例的方法圖。
第3圖圖示依據本文描述的各種實施例在不同溫度的熱處理之前和之後來自紫外線腔室部件的膠帶微粒收集之顯微照片。
第4A-4E圖圖示依據本文描述的各種實施例在曝露於腐蝕性環境之前和之後、來自在不同溫度進行熱處理的紫外線腔室部件的膠帶微粒收集之顯微照片。
第5圖圖示依據本文描述的各種實施例在不同溫度的熱處理之前和之後紫外線腔室部件之表面型態顯微照片。
第6A-6E圖圖示依據本文描述的各種實施例在曝露於腐蝕性環境之前和之後、在不同溫度進行熱處理的紫外線腔室部件之表面型態顯微照片。
為了便於理解，已在可能處使用相同的元件符號來指稱對於圖式為相同的元件。構思的是，可以將一個實施例的元件和特徵有益地併入其它實施例中而無需進一步詳述。
本文描述的實施例大體而言係關於用於熱處理紫外線半導體處理腔室中使用的腔室部件之設備和方法。包含單一陶瓷或玻璃物件的腔室部件之熱處理可以減少腔室部件曝露於腐蝕性環境、例如曝露於紫外光和臭氧/氧自由基時產生微粒的可能性。一種熱處理腔室部件的方法包括以可接受的升降溫速率將單一物件加熱到所需的溫度持續所需的期間，並於隨後以該升降溫速率冷卻該單一物件。
腔室部件的熱處理可以最少化或消除腔室部件上的表面微粒。熱處理可以減少高能鍵(斷鍵)在腔室部件表面或附近的普遍率，並在用於存在光子或氧自由基的紫外線半導體製程時產生明顯較低量的微粒污染物。因此，使用熱處理過的腔室部件製造的半導體可以具有較少的缺陷數。
雖然本文提供的實施例之描述係關於紫外線半導體製程，但構思的是，腔室部件也可以在各種其它類型的腔室中提供減少的微粒污染物，例如化學氣相沉積(CVD)腔室、物理氣相沉積(PVD)腔室、電漿增強化學氣相沉積(PECVD)腔室、電漿增強物理氣相沉積(PEPVD)腔室、電漿增強原子層沉積(PEALD)腔室、及類似者。
第1圖圖示紫外線半導體處理腔器100之示意性剖面圖。紫外線腔室100包含腔室主體102、氣源110、及紫外 線光源112。紫外線光源112可設以處理基板，例如藉由進行固化或灰化製程，而且氣源110可設以輸送清潔氣體(例如臭氧)到腔室100。氣源110也可設以提供其它的氣體(例如處理氣體和載送氣體)到腔室100。氣源110提供的氣體可以經由氣體輸送裝置106被提供到腔室100的處理區域114，氣體輸送裝置106例如噴頭、氣口、輸送噴嘴、或類似物。
由腔室主體102界定的處理區域114係處在腐蝕性環境108中。腐蝕性環境108可以被界定為促進微粒從腔室部件104產生的環境。例如，來自紫外線光源112的光子及衍生自氣源110提供的臭氧之氧自由基可能促進腐蝕性環境108形成。腔室部件104可以包括底座、基座、升舉銷、襯墊、加熱器、靜電吸盤、屏蔽、邊環、噴頭、圓頂、腔室壁、或其它腔室部件。
適當的處理腔室之實例包括PRODUCER® NANOCURETM 3 UV CURE系統和PRODUCER® ONYXTM系統，皆可向Santa Clara,CA.的應用材料公司購得。構思的是，來自其它製造商的其它適用腔室和系統也可從本文描述的實施例中獲益。
第2圖圖示用於熱處理腔室部件的方法200。在操作210，提供包含單一陶瓷或玻璃物件的紫外線腔室部件。本文定義的單一物件可以是上面沒有配置塗層的單件陶瓷或玻璃。用語「紫外線腔室部件」和「單一陶瓷或玻璃物件」可以在以下的全部描述中互換使用。
在操作210，腔室部件可以被提供到諸如窯的爐中。 該爐包括能夠在被插入其中的紫外線腔室部件上施加控制溫度的絕熱腔室、或烘箱。在一個實施例中，該爐的絕熱腔室可以被不透氣地密封。該爐可以包括將空氣泵出絕熱腔室的泵，從而在絕熱腔室內形成真空。此外，該爐可以包括進氣口，以將諸如氬氣、氮氣、氦氣等氣體泵入絕熱腔室中。該爐可以是能夠進行製程製作方法的，該製程製作方法控制升溫速率、降溫速率、製程時間、溫度、壓力、氣體流量、及類似者。
被提供到爐中、包含單一陶瓷或玻璃物件的紫外線腔室部件可以從各種散裝材料形成。在一個實例中，單一陶瓷物件被提供並可以從諸如Al2O3、AlN、AlON、SiC、Si3N4、SiCN、Si-SiC、ZrO2、Y2O3、摻雜Y2O3的ZrO2、Y2O3類陶瓷、Er2O3及上述之組合等陶瓷形成。在另一個實例中，單一玻璃物件被提供並且可以從諸如石英、鋁矽酸鹽玻璃、硼矽酸鹽玻璃、摻雜稀土元素的矽酸鹽玻璃、氮化物玻璃、及上述之組合等玻璃形成。包含氧化物的陶瓷和玻璃單一物件可以在爐中、在周遭空氣環境中進行熱處理，該周遭空氣環境可以是氧化性環境。包含諸如碳化物或氮化物等非氧化物的陶瓷和玻璃單一物件可以在爐中、在非氧化性環境中進行熱處理。例如，氮氣、氦氣、氬氣、及上述氣體之組合可以被提供到爐中而形成非氧化性環境，以防止非氧化物單一陶瓷或玻璃物件的氧化。
也可以在提供紫外線腔室部件到爐中之前先對紫外線腔室部件進行加工。加工的實例包括表面研磨、拋光、鑽 孔、磨擦、切割、噴珠、或以其它方式處理紫外線腔室部件。紫外線腔室部件在熱處理之前的加工可能導致微粒存在於紫外線腔室部件的表面上。在將腔室部件插入爐中之前，存在於紫外線腔室部件之表面上的微粒可以被從表面清除或保持在表面上。在一個實施例中，單一陶瓷或玻璃物件上可以藉由加工形成的表面粗糙度Ra(μin)係小於約65μin，例如約40μin。構思的是，單一陶瓷或玻璃物件的表面粗糙度Ra與熱處理結合可以進一步降低微粒形成的普遍率。
在操作220，紫外線腔室部件被以介於約0.1℃/分鐘至約20℃/分鐘的第一升降溫速率加熱到介於約1000℃和約1800℃之間的溫度範圍。單一陶瓷或玻璃物件可能是脆弱的，而且可能在曝露於極端溫度變化時破裂。因此，升降溫速率是足夠慢的，以防止單一陶瓷或玻璃物件破裂或以其它方式失去結構完整性。構思的是，對於某些單一陶瓷或玻璃物件來說，可以使用大於約20℃/分鐘的升降溫速率。因此，在一些實施例中，也可以使用超出20℃/分鐘且不引起破裂的升降溫速率。
使單一陶瓷或玻璃物件破裂的溫度變化可能取決於單一陶瓷或玻璃物件的組成。例如，Al2O3可以被以10℃/分鐘以上的速率加熱而不會破裂。然而，假使被以約5℃/分鐘以上的升降溫速率加熱，則Y2O3可能會破裂。在一個實施例中，介於約0.1℃/分鐘和約5℃/分鐘之間、例如約2℃/分鐘的升降溫速率可被用於包含Al2O3的單一陶瓷物件。典型上，單一陶瓷或玻璃物件將從環境溫度或附近開始並被以升 降溫速率緩慢加熱到預定的溫度。在一個實施例中，Al2O3單一物件被加熱到介於約1300℃和約1500℃之間、例如約1400℃的溫度。
在操作230，紫外線腔室部件在溫度範圍內的一個或更多個溫度下進行熱處理持續約0.5小時至約24小時之間的持續時間。在一個實施例中，該溫度範圍介於約1小時和約4小時之間，例如約2小時。所使用的具體持續時間可以取決於單一陶瓷或玻璃物件的組成，以及單一陶瓷或玻璃物件所需的性能。在一個實施例中，單一陶瓷或玻璃物件被保持在單一溫度下持續熱處理的持續時間。或者，單一陶瓷或玻璃物件可以在熱處理過程中被加熱及/或冷卻到在溫度範圍內的多個不同溫度。例如，單一陶瓷或玻璃物件可以在第一溫度下進行熱處理持續第一持續時間，然後可以在第二溫度下進行熱處理持續第二持續時間。當使用多個不同的熱處理溫度時，單一陶瓷或玻璃物件可以被以升降溫速率加熱及/或冷卻，以在第一和第二溫度之間轉換。
在操作240，紫外線腔室部件被以介於約0.1℃/分鐘和約20℃/分鐘的第二升降溫速率冷卻。在一個實施例中，單一陶瓷或玻璃物件被以與用以加熱單一陶瓷或玻璃物件的升降溫速率相同的升降溫速率冷卻。在另一個實施例中，使用與用以加熱單一陶瓷或玻璃物件的升降溫速率不同的升降溫速率來冷卻單一陶瓷或玻璃物件。對於某些單一陶瓷或玻璃物件來說，可以在臨界溫度(例如約100℃)以下以高於該升降溫速率的速率冷卻物件。
由於熱處理的結果，紫外線腔室部件可以針對微粒污染物及紫外線和氧自由基抗性表現出改良的性能。一般來說，熱處理方法200可以在將紫外線腔室部件使用於紫外線處理腔室之前進行。或者，熱處理方法200可以在先前已被用於紫外線處理腔室的紫外線腔室部件上進行。
如前面所描述的，曝露於紫外線能量和氧自由基可能產生會污染半導體元件的微粒。熱處理方法200可以降低在新製造的紫外線腔室部件上產生的微粒之普遍率或可以處理好缺陷並降低使用過的紫外線腔室部件產生微粒的普遍率。因此，熱處理方法200可被用於製備或修復紫外線腔室部件並延長紫外線腔室部件的使用壽命。構思的是，用於後續熱處理製程的熱處理方法200之溫度及/或持續時間可以不同於用於初始熱處理製程的溫度及/或持續時間。
第3圖圖示在不同溫度的熱處理之前和之後紫外線腔室部件表面的微粒收集之顯微照片302-310。將被應用於單一Al2O3物件的聚醯亞胺膠帶(例如KAPTON®膠帶)以4,000X的放大倍數顯示於顯微照片302-310中。膠帶微粒收集測試可以藉由將黏性膠帶黏附於單一Al2O3物件、剝離膠帶、及計數黏附於膠帶的微粒數量來進行。顯微照片302顯示熱處理之前的膠帶樣品。存在於物件表面上的微粒312通常是不理想的，並使用熱處理方法200來從物件減少或消除存在的微粒312。
顯微照片304顯示在1200℃的熱處理之後來自單一Al2O3物件的膠帶微粒收集。如所示，存在於膠帶上的微粒312 之量被大為減少，然而仍可以從單一Al2O3物件收集到一些微粒312。顯微照片306、308、310顯示分別在溫度1300℃、1400℃、及1500℃的熱處理之後來自單一Al2O3物件的膠帶微粒收集。由於單一Al2O3物件的熱處理，顯微照片306、308、310中膠帶上的存在微粒基本上是不存在的。
第4A圖顯示在曝露於腐蝕性環境之前和之後來自單一Al2O3物件的膠帶微粒收集之顯微照片402-406。顯微照片402a、404a、及406a顯示在曝露於腐蝕性環境之前來自無熱處理單一Al2O3物件之各個區域的膠帶微粒收集。如所示，微粒312被收集到膠帶上。圖402b、404b、及406b顯示在曝露於腐蝕性環境之後分別來自顯微照片402a、404a、及406a之相同區域的膠帶微粒收集。如所示，微粒312被收集在膠帶上。
對於第4A-4E圖表示的測試，單一Al2O3物件是藉由將該單一Al2O3物件放在紫外線處理腔室中的加熱器上而在該腔室中進行處理。加熱器溫度在環境溫度和200℃之間擺動持續825個加熱循環。在該等循環中之至少一個循環的過程中或之後進行臭氧清潔製程。臭氧清潔製程持續300秒的持續時間，在該持續時間期間12.5wt%的臭氧被以10slm提供到紫外線處理腔室。隨後，氦氣和氬氣各被以16slm提供到紫外線處理腔室，以淨化紫外線處理腔室。淨化製程具有10秒的持續時間。在淨化製程期間紫外線處理腔室的壓力為3托。上述條件模擬出可能包括紫外線能量和氧自由基的腐蝕性環境。
第4B-4E圖顯示在曝露於腐蝕性環境之前和之後、在不同溫度熱處理的紫外線腔室部件的膠帶微粒收集之顯微照片。第4B圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件的膠帶微粒收集之顯微照片408-412。顯微照片408a、410a、及412a顯示在曝露於腐蝕性環境之前來自在1200℃熱處理的單一Al2O3物件之各個區域的膠帶微粒收集。如所示，在曝露於腐蝕性環境之前微粒312被收集在膠帶上。圖408b、410b、及412b顯示在曝露於腐蝕性環境之後分別來自顯微照片408a、410a、及412a之相同區域的膠帶微粒收集。如所示，在1200℃熱處理的單一Al2O3物件在曝露於腐蝕性環境之後微粒312被收集在膠帶上。
第4C圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件的膠帶微粒收集之顯微照片414-418。顯微照片414a、416a、及418a顯示在曝露於腐蝕性環境之前來自在1300℃熱處理的單一Al2O3物件之各個區域的膠帶微粒收集。如所示，在曝露於腐蝕性環境之前沒有可辨識的微粒存在膠帶上。圖414b、416b、及418b顯示在曝露於腐蝕性環境之後分別來自顯微照片414a、416a、及418a之相同區域的膠帶微粒收集。如所示，在1300℃熱處理的單一Al2O3物件在曝露於腐蝕性環境之後沒有可辨識的微粒存在膠帶上。
第4D圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件的膠帶微粒收集之顯微照片420-424。顯微照片420a、422a、及424a顯示在曝露於腐蝕性環境之前來自在1400℃熱處理的單一Al2O3物件之各個區域的膠帶微粒收集。如所 示，在曝露於腐蝕性環境之前沒有可辨識的微粒存在膠帶上。圖420b、422b、及424b顯示在曝露於腐蝕性環境之後分別來自顯微照片420a、422a、及424a之相同區域的膠帶微粒收集。如所示，在1400℃熱處理的單一Al2O3物件在曝露於腐蝕性環境之後沒有可辨識的微粒存在膠帶上。
第4E圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件的膠帶微粒收集之顯微照片426-430。顯微照片426a、428a、及430a顯示在曝露於腐蝕性環境之前來自在1500℃熱處理的單一Al2O3物件之各個區域的膠帶微粒收集。如所示，在曝露於腐蝕性環境之前沒有可辨識的微粒存在膠帶上。圖426b、428b、及430b顯示在曝露於腐蝕性環境之後分別來自顯微照片426a、428a、及430a之相同區域的膠帶微粒收集。如所示，在1500℃熱處理的單一Al2O3物件在曝露於腐蝕性環境之後沒有可辨識的微粒存在膠帶上。
第4B-4E圖顯示諸如紫外線能量或臭氧(氧自由基)的腐蝕性環境基本上對於單一Al2O3物件沒有影響。因此，據信紫外線腔室部件的熱處理減少或消除了微粒產生的普遍率，並且可以增加紫外線腔室部件的使用壽命，同時提高無缺陷元件的產率。
第5圖圖示在不同溫度的熱處理之前和之後紫外線腔室部件之表面型態顯微照片502-510。顯微照片502-510顯示在4,000X放大倍數的單一Al2O3物件之表面。單一Al2O3物件的表面形態可以使用表面粗糙度Ra參數及/或表面均勻參數表示。表面形態也可以使用孔隙度、裂紋及/或孔隙參數 表示。表示孔隙度的量測參數可以包括開口數及/或平均孔徑。同樣地，表示孔隙及/或裂紋的量測參數可以包括平均孔隙/裂紋尺寸及/或孔隙/裂紋數。構思的是，由於熱處理的結果，單一Al2O3物件的表面粗糙度可以具有減小的表面粗糙度Ra。減小的表面粗糙度也可以降低來自陶瓷或玻璃紫外線腔室部件的微粒產生之普遍率。
顯微照片502顯示在熱處理之前的單一Al2O3物件之表面形態。顯微照片504和506顯示分別在1200℃和1300℃熱處理之後的單一Al2O3物件之表面形態。如所示，當將顯微照片504、506與顯微照片502相比時，表面形態沒有明顯的變化。顯微照片508顯示在1400℃熱處理之後的單一Al2O3物件。如所示，當與顯微照片502相比時，熱處理稍微改變了單一Al2O3物件的表面形態，儘管據信表面形態的變化是可忽略的。顯微照片510顯示在1500℃熱處理之後的單一Al2O3物件。如所示，當與顯微照片502相比時，熱處理大大地改變了單一Al2O3物件的表面形態。因此，紫外線腔室部件在溫度低於約1400℃的熱處理可以保持結構完整性和紫外線腔室部件的加工公差。
第6A圖顯示表面形態顯微照片602-606。顯微照片602a、604a、及606a顯示在曝露於腐蝕性環境之前來自無熱處理的單一Al2O3物件之各個區域的表面形態特徵。腐蝕性環境在關於第4A-4E圖有詳細的描述。圖602b、604b、及606b顯示在曝露於腐蝕性環境之後分別來自顯微照片602a、604a、及606a之相同區域的表面形態特徵。如所示，由於曝 露於腐蝕性環境，單一Al2O3物件的表面形態中有明顯的變化。
第6B-6E圖顯示在曝露於腐蝕性環境之前和之後、在不同溫度熱處理的單一Al2O3物件之表面型態顯微照片。第6B圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件之表面型態顯微照片608-612。顯微照片608a、610a、及612a顯示在曝露於腐蝕性環境之前來自在1200℃熱處理的單一Al2O3物件之各個區域的表面型態特徵。圖608b、610b、及612b顯示在曝露於腐蝕性環境之後分別來自顯微照片608a、610a、及612a之相同區域的表面型態特徵。如所示，在1200℃熱處理、曝露於腐蝕性環境的單一Al2O3物件沒有因為腐蝕性環境的曝露而在表面型態表現出明顯變化。
第6C圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件之表面型態顯微照片614-618。顯微照片614a、616a、及618a顯示在曝露於腐蝕性環境之前來自在1300℃熱處理的單一Al2O3物件之各個區域的表面型態特徵。圖614b、616b、及618b顯示在曝露於腐蝕性環境之後分別來自顯微照片614a、616a、及618a之相同區域的表面型態特徵。如所示，在1300℃熱處理、曝露於腐蝕性環境的單一Al2O3物件沒有因為腐蝕性環境的曝露而在表面型態表現出明顯變化。
第6D圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件之表面型態顯微照片620-624。顯微照片620a、622a、及624a顯示在曝露於腐蝕性環境之前來自在1400℃ 熱處理的單一Al2O3物件之各個區域的表面型態特徵。圖620b、622b、及624b顯示在曝露於腐蝕性環境之後分別來自顯微照片620a、622a、及624a之相同區域的表面型態特徵。如所示，在1400℃熱處理、曝露於腐蝕性環境的單一Al2O3物件沒有因為腐蝕性環境的曝露而在表面型態表現出明顯變化。
第6E圖顯示在曝露於腐蝕性環境之前和之後單一Al2O3物件之表面型態顯微照片626-630。顯微照片626a、628a、及630a顯示在曝露於腐蝕性環境之前來自在1500℃熱處理的單一Al2O3物件之各個區域的表面型態特徵。圖626b、628b、及630b顯示在曝露於腐蝕性環境之後分別來自顯微照片626a、628a、及630a之相同區域的表面型態特徵。如所示，在1500℃熱處理、曝露於腐蝕性環境的單一Al2O3物件沒有因為腐蝕性環境的曝露而在表面型態表現出明顯變化。
在上述的實例中，高於約1400℃的熱處理可以改變紫外線腔室部件的表面形態。然而，曝露於腐蝕性環境不會改變表面形態。因此，在重複曝露於腐蝕性環境之後可以保持熱處理過的紫外線腔室部件所需的表面形態。此外，紫外線腔室部件(例如單一陶瓷或玻璃物件)的熱處理可以減低或消除微粒從紫外線腔室部件的表面產生的機會。
雖然前述係針對本揭示之實施例，但在不偏離本揭示之基本範圍下仍可設計出本揭示之其它和進一步的實施例，而且本揭示之範圍係由隨後的申請專利範圍所決定。

Claims (20)

  1. 一種熱處理紫外線腔室部件的方法，包含以下步驟：以一介於0.1℃/分鐘和20℃/分鐘之間的第一升降溫速率將一單一陶瓷物件加熱到一介於1000℃和1800℃之間的溫度範圍；將該單一陶瓷物件熱處理一介於0.5小時和24小時之間的持續時間；以及以一介於0.1℃/分鐘和20℃/分鐘之間的第二升降溫速率冷卻該單一陶瓷物件。
  2. 如請求項1所述之方法，其中該單一陶瓷物件包含一選自於由Al2O3、AlN、AlON、SiC、Si3N4、SiCN、Si-SiC、ZrO2、Y2O3、摻雜Y2O3的ZrO2、Y2O3類陶瓷、Er2O3及上述之組合所組成之群組的材料。
  3. 如請求項2所述之方法，其中含氧化物的單一陶瓷物件係在一周遭空氣環境中進行熱處理。
  4. 如請求項2所述之方法，其中非氧化物的單一陶瓷物件係在一非氧化環境中進行熱處理。
  5. 如請求項1所述之方法，其中該溫度範圍係介於1200℃和1500℃之間。
  6. 如請求項1所述之方法，其中熱處理之該持續時間係介於1小時和3小時之間。
  7. 如請求項1所述之方法，其中選擇該第一和第二升降溫速率，以防止該單一陶瓷物件破裂。
  8. 一種熱處理紫外線腔室部件的方法，包含以下步驟：以一介於0.1℃/分鐘和20℃/分鐘之間的第一升降溫速率將一單一玻璃物件加熱到一介於1000℃和1800℃之間的溫度範圍；將該單一玻璃物件熱處理一介於0.5小時和24小時之間的持續時間；以及以一介於0.1℃/分鐘和20℃/分鐘之間的第二升降溫速率冷卻該單一玻璃物件。
  9. 如請求項8所述之方法，其中該單一玻璃物件包含一選自於由石英、鋁矽酸鹽玻璃、硼矽酸鹽玻璃、摻雜稀土元素的矽酸鹽玻璃、氮化物玻璃、及上述之組合所組成之群組的材料。
  10. 如請求項9所述之方法，其中含氧化物的單一玻璃物件係在一周遭空氣環境中進行熱處理。
  11. 如請求項9所述之方法，其中非氧化物的單一玻璃物件係在一非氧化環境中進行熱處理。
  12. 如請求項8所述之方法，其中該溫度範圍係介於1200℃和1500℃之間。
  13. 如請求項8所述之方法，其中熱處理之該持續時間係介於1小時和3小時之間。
  14. 如請求項8所述之方法，其中選擇該第一和第二升降溫速率，以防止該單一玻璃物件破裂。
  15. 一種藉由一方法製備的經熱處理紫外線腔室部件，該方法包含以下步驟：以一介於0.1℃/分鐘和20℃/分鐘之間的第一升降溫速率將一單一陶瓷或玻璃物件加熱到一介於1000℃和1800℃之間的溫度範圍；將該單一陶瓷或玻璃物件熱處理一介於0.5小時和24小時之間的持續時間；以及以一介於0.1℃/分鐘和20℃/分鐘之間的第二升降溫速率冷卻該單一陶瓷或玻璃物件。
  16. 如請求項15所述之經熱處理紫外線腔室部件，其中該單一陶瓷或玻璃物件係選自於由Al2O3、AlN、AlON、SiC、Si3N4、SiCN、Si-SiC、ZrO2、Y2O3、摻雜Y2O3的ZrO2、Y2O3類陶瓷、Er2O3、石英、鋁矽酸鹽玻璃、硼矽酸鹽玻璃、摻雜稀土元素的矽酸鹽玻璃、氮化物玻璃、及上述之組合所組成之群組。
  17. 如請求項15所述之經熱處理紫外線腔室部件，其中含氧化物的單一陶瓷或玻璃物件係在一周遭空氣環境中進行熱處理。
  18. 如請求項15所述之經熱處理紫外線腔室部件，其中非氧化物的單一陶瓷或玻璃物件係在一非氧化環境中進行熱處理。
  19. 如請求項15所述之經熱處理紫外線腔室部件，其中該溫度範圍係介於1200℃和1500℃之間。
  20. 如請求項15所述之經熱處理紫外線腔室部件，其中熱處理之該持續時間係介於1小時和3小時之間。
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US20150251961A1 (en) 2015-09-10
CN106458769A (zh) 2017-02-22
KR20160130250A (ko) 2016-11-10
KR102370665B1 (ko) 2022-03-03

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