TWI663744B - Light emitting diode display - Google Patents

Abstract

A light emitting diode display includes a substrate, an integrated circuit, a pixel definition layer, and at least one light emitting diode. The integrated circuit is disposed on a substrate. The pixel definition layer covers the integrated circuit and has a pixel open area. At least one light emitting diode is disposed in the pixel opening area of the pixel definition layer and is electrically connected to the integrated circuit.

Description

LED display

The invention relates to a display, and in particular to a light emitting diode display.

The light emitting diode display includes a back plate and a plurality of micro light emitting diodes arranged on the back plate. Inheriting the characteristics of light-emitting diodes, light-emitting diode displays have the advantages of power saving, high efficiency, high brightness, and fast response time. In addition, compared with organic light-emitting diode displays, light-emitting diode displays also have the advantages of easy color adjustment, long light-emitting life, and no image burn-in. Therefore, light-emitting diode displays are considered as the display technology of the next generation.

The invention provides a light emitting diode display with excellent performance.

The light-emitting diode display of the present invention includes a substrate, an integrated circuit, a pixel definition layer, and at least one light-emitting diode. The integrated circuit is disposed on a substrate. The pixel definition layer covers the integrated circuit and has a pixel open area. In a vertical direction of the substrate, the pixel opening area does not overlap the integrated circuit. At least one light emitting diode is disposed in the pixel opening area of the pixel definition layer and is electrically connected to the integrated circuit.

In an embodiment of the present invention, the integrated circuit has a bottom surface close to the substrate, a top surface remote from the substrate, and a sidewall connected between the bottom surface and the top surface, and the pixel definition layer shields the top surface of the integrated circuit and Side wall of integrated circuit.

In an embodiment of the present invention, the integrated circuit has a bottom surface close to the substrate, a top surface remote from the substrate, and a sidewall connected between the bottom surface and the top surface, and the pixel definition layer is in contact with the top surface of the integrated circuit .

In an embodiment of the present invention, the integrated circuit has pads, the pixel definition layer further has a first opening, the first opening of the pixel definition layer overlaps with the pads of the integrated circuit, and the light emitting diode The display further includes a first connection pattern. Part of the first connection pattern is located in the first opening of the pixel definition layer, and at least one light emitting diode is electrically connected to the pad of the integrated circuit through the first connection pattern.

In an embodiment of the present invention, the pixel definition layer has a sidewall that defines a pixel opening area, and the light emitting diode display further includes at least one reflection pattern and a first insulation layer. At least one reflection pattern is disposed on a sidewall of the pixel definition layer. The first insulating layer covers at least one light-emitting diode, at least one reflection pattern, and a pixel definition layer, and has a second opening overlapping with the first opening of the pixel definition layer. A part of the first connection pattern is disposed on the first insulation layer and is located in the pixel opening area and the second opening.

In an embodiment of the present invention, the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode. The light-emitting layer has opposite first and second sides. The substrate is located on the first side of the light-emitting layer. The first electrode and the second electrode are located on the second side of the light-emitting layer, and the first electrode of at least one light-emitting diode is electrically connected to the pad of the integrated circuit through the first connection pattern.

In an embodiment of the present invention, the first insulating layer further has a third opening, and the light emitting diode display further includes a second connection pattern and a common conductive pattern. The second connection pattern is disposed on the first insulating layer, and is electrically connected to the second electrode of the at least one light emitting diode through the third opening. The common conductive pattern is electrically connected to the second connection pattern to be electrically connected to the second electrode of the at least one light emitting diode.

In an embodiment of the present invention, the light-emitting diode display further includes a second insulating layer. The second insulation layer covers the first connection pattern, the second connection pattern, and the first insulation layer. The second insulating layer has a fourth opening, and the common conductive pattern is electrically connected to the second connection pattern through the fourth opening.

In an embodiment of the present invention, the pixel definition layer has a sidewall that defines a pixel opening area, and the first connection pattern directly covers a part of the sidewall of the pixel definition layer.

In an embodiment of the present invention, the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode. The light-emitting layer has opposite first and second sides. The substrate and the first electrode are located on the light-emitting layer. On the first side, the second electrode is located on the second side of the light emitting layer, and the light emitting diode display further includes a protective layer and a common conductive pattern. The protective layer is disposed on the pixel definition layer, the first connection pattern, and the at least one light emitting diode, and has a fifth opening overlapping the second electrode of the at least one light emitting diode. The common conductive pattern is disposed on the protective layer, and the common conductive pattern is electrically connected to the second electrode of the at least one light emitting diode through the fifth opening.

In an embodiment of the present invention, the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode, the light-emitting layer has opposite first and second sides, a substrate, a first electrode, and a second electrode. The electrode is located on the first side of the light-emitting layer, and the light-emitting diode display further includes a second connection pattern, a protective layer, and a common conductive pattern. The second connection pattern covers the sidewall of another part of the pixel definition layer and is electrically connected to the second electrode of the at least one light-emitting diode, wherein the first connection pattern and the second connection pattern are structurally separated. The protective layer covers the pixel definition layer, the first connection pattern, at least one light-emitting diode, and the second connection pattern, wherein the protection layer has a sixth opening. The common conductive pattern is disposed on the protective layer, and the common conductive pattern is electrically connected to the second connection pattern through the sixth opening.

In an embodiment of the present invention, the optical density value of the pixel definition layer is OD, and 3 ≤ OD ≤ 4.

In an embodiment of the present invention, the pixel definition layer has a thickness H1, and 600 μm ≦ H1 ≦ 700 μm.

In an embodiment of the present invention, a material of the pixel definition layer includes a dark insulating material.

Based on the above, the pixel definition layer of the light-emitting diode display according to an embodiment of the present invention covers the integrated circuit. That is, the integrated circuit for driving the light emitting diode is disposed under the pixel definition layer. As a result, the integrated circuit is difficult to be detected, which helps to improve the visual effect of the light emitting diode display. In addition, since the integrated circuit is arranged under the existing pixel definition layer, the light emitting diode display does not need to move an extra substrate area (area) for the integrated circuit to be set, and can allow more substrate areas. (Area) is used by other components (for example, more light-emitting diodes), thereby improving the performance of the light-emitting diode display (for example, resolution, brightness, etc.).

In order to make the above features and advantages of the present invention more comprehensible, embodiments are hereinafter described in detail with reference to the accompanying drawings.

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers are used in the drawings and the description to refer to the same or like parts.

1A to 1M are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to an embodiment of the present invention. FIG. 2 is a schematic top view of a light emitting diode display according to an embodiment of the present invention. In particular, Fig. 1M corresponds to the section line A-A 'of Fig. 2. In addition, for the sake of clarity, FIG. 2 omits the illustration of the adhesive layer 120, the reflective pattern 150, and the protective layer 196 of FIG. 1M.

Referring to FIG. 1A, first, a substrate 110 is provided. For example, in this embodiment, the material of the substrate 110 may be glass, quartz, organic polymers, opaque / reflective materials (for example, conductive materials, wafers, ceramics, or other applicable materials), or Are other applicable materials.

Please refer to FIG. 1B and FIG. 1C. Next, the integrated circuit 130 is disposed on the substrate 110. For example, in this embodiment, the adhesive layer 120 may be formed on the substrate 110 first, and then the integrated circuit 130 is disposed on the adhesive layer 120 so that the integrated circuit 130 is fixed on the substrate 110 through the adhesive layer 120. In this embodiment, the material of the adhesive layer 120 is, for example, a photoresist. However, the present invention is not limited thereto, and other suitable materials may be used for the adhesive layer 120 according to other embodiments. In addition, the present invention does not limit the integrated circuit 130 to be fixed on the substrate 110 by using the adhesive layer 120. According to other embodiments, the integrated circuit 130 may be fixed on the substrate 110 by other methods.

1C, in this embodiment, the integrated circuit 130 has a bottom surface 130a close to the substrate 110, a top surface 130b remote from the substrate 110, and a side wall 130c connected between the bottom surface 130a and the top surface 130b. The integrated circuit 130 further includes a plurality of contact pads 132, and the multiple contact pads 132 are located on the top surface 130 b of the integrated circuit 130. The integrated circuit 130 is used to drive the light emitting diode 160 (illustrated in FIG. 1M). In this embodiment, the integrated circuit 130 refers to an unpackaged die, but the present invention is not limited thereto.

1D and FIG. 2, a predetermined pixel definition layer 140 'is formed. The predetermined pixel definition layer 140 'has a pixel opening area 142. In a vertical direction z of the substrate 110, the pixel opening region 142 does not overlap the integrated circuit 130. The pixel opening area 142 is located outside the area of the integrated circuit 130. The boundary of the pixel opening area 142 is defined by the side wall 140a of the predetermined pixel definition layer 140 '. That is, the side wall 130c of the integrated circuit 130 is covered by the predetermined pixel definition layer 140 '. Referring to FIG. 1E, a reflective pattern 150 is formed. The reflective pattern 150 is disposed on a sidewall 140a of a predetermined pixel definition layer 140 '. The reflection pattern 150 is used to reflect a light beam (not shown) emitted by the light emitting diode 160 so that the light beam is emitted in a specified direction (for example, an upward direction), thereby improving the brightness of the light emitting diode display 10. In this embodiment, the material of the reflective pattern 150 is, for example, a metal, an alloy, other reflective materials, or a combination thereof, but the present invention is not limited thereto.

Please refer to FIG. 1F to FIG. 1I and FIG. 2. Next, the light emitting diode 160 is disposed in the pixel opening area 142, and the light emitting diode 160 is electrically connected to the integrated circuit 130.

Please refer to FIG. 1F. First, a light emitting diode 160 may be provided. The light emitting diode 160 includes a first type semiconductor layer 161, a second type semiconductor layer 162, and a first type semiconductor layer 161 and a second type semiconductor layer 162. The light emitting layer 163, the first electrode 164 electrically connected to the first type semiconductor layer 161, and the second electrode 165 electrically connected to the second type semiconductor layer 162. In this embodiment, the light emitting layer 163 has a first side (for example, a lower side) and a second side (for example, an upper side) opposite to each other. The substrate 110 is located on the first side (for example, a lower side) of the light emitting layer 163. An electrode 164 and a second electrode 165 are both located on the second side (eg, the upper side) of the light-emitting layer 163. In other words, in this embodiment, the light emitting diode 160 may be a horizontal light emitting diode. However, the present invention is not limited to this. In other embodiments, the light-emitting diode may be other types of light-emitting diodes, such as a vertical light-emitting diode, a flip-chip light-emitting diode, and the like. The subsequent paragraphs are illustrated with other drawings.

Referring to FIG. 1F, in this embodiment, the light-emitting diode 160 may be disposed on a part of the adhesive layer 120 overlapping the pixel opening region 142, so that the light-emitting diode 160 is fixed in the pixel opening region 142. in. Referring to FIG. 1G, a first insulating material layer 170 'is formed to cover the light emitting diode 160, the reflection pattern 150, and the predetermined pixel definition layer 140'. In this embodiment, the first insulating material layer 170 'is transparent. The material of the first insulating material layer 170 'may be an inorganic material (for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two materials), an organic material, or a combination thereof.

Referring to FIG. 1H, the first insulating material layer 170 'and the predetermined pixel defining layer 140' are patterned to form the pixel defining layer 140 and the first insulating layer 170. The pixel definition layer 140 has a first opening 144. The first insulating layer 170 has a second opening 174, a contact window 176, and a third opening 178. In a vertical direction z of the substrate 110, the first opening 144 of the pixel definition layer 140 is overlapped with the pad 132 of the integrated circuit 130, and the first opening 144 of the pixel definition layer 140 is not overlapped with the light emitting diode 160 . The second opening 174 of the first insulating layer 170 overlaps the first opening 144 of the pixel definition layer 140. The contact window 176 of the first insulating layer 170 and the third opening 178 of the first insulating layer 170 are located in the pixel opening area 142 and are respectively connected to the first electrode 164 of the light emitting diode 160 and the second electrode of the light emitting diode 160. 165 overlap.

It is worth noting that the pixel definition layer 140 covers the integrated circuit 130. In this embodiment, the pixel definition layer 140 completely shields the top surface 130 b and the side wall 130 c of the integrated circuit 130 and is in contact with the top surface 130 b and the side wall 130 c of the integrated circuit 130. In short, in this embodiment, in addition to defining the pixel opening area 142, the pixel definition layer 140 can also be used as a material for packaging the integrated circuit 130 (eg, a bare crystal).

The material of the pixel definition layer 140 is an insulating material. For example, in this embodiment, the material of the pixel definition layer 140 may be a light-shielding insulating material. The optical density value of the light-shielding insulating material may fall in a range of 3 to 4. The light-shielding insulating material includes, for example, a dark-colored insulating material such as black photoresist, black resin, or other suitable materials. However, the present invention is not limited to this. In other embodiments, the material of the pixel definition layer 140 may also be a light-transmitting insulating material, such as: light-transmitting photoresist, silicon oxide, silicon nitride, silicon oxynitride, or other materials. Appropriate materials.

The pixel definition layer 140 has a thickness H1, where the thickness H1 of the pixel definition layer 140 is greater than the height H2 of the integrated circuit 130. For example, in this embodiment, the thickness H1 of the pixel definition layer 140 may fall in the range of 600 μm to 700 μm, but the invention is not limited thereto.

Referring to FIG. 1I, a first connection pattern 182 and a second connection pattern 184 are formed on the first insulating layer 170. Part of the first connection pattern 182 is located in the contact window 176 of the first insulating layer 170, the second opening 174 of the first insulating layer 170, and the first opening 144 of the pixel definition layer 140, and the first of the light emitting diode 160 The electrode 164 is electrically connected to the pad 132 of the integrated circuit 130 through the first connection pattern 182. A portion of the second connection pattern 184 is located in the third opening 178 of the first insulating layer 170 and is electrically connected to the second electrode 165 of the light emitting diode 160. In this embodiment, the first connection pattern 182 and the second connection pattern 184 are, for example, light-transmitting conductive patterns. The material of the transparent conductive pattern includes, for example, metal oxides, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, other suitable oxides, or at least the foregoing. Stacked layers of the two, but the invention is not limited thereto.

Referring to FIG. 1J, a second insulating material layer 190 'is formed to cover the first connection pattern 182, the second connection pattern 184, and the first insulation layer 170. In this embodiment, the second insulating material layer 190 'is transparent. The material of the second insulating material layer 190 'may be an inorganic material (for example, silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two materials), an organic material, or a combination thereof.

Referring to FIG. 1J and FIG. 1K, the second insulating material layer 190 'is patterned to form a second insulating layer 190. The second insulating layer 190 has a fourth opening 192, wherein the fourth opening 192 overlaps the second connection pattern 184. In this embodiment, the fourth opening 192 is located outside the pixel opening area 142 and is located above the pixel definition layer 140, but the present invention is not limited thereto.

Referring to FIG. 1L, a common conductive pattern 194 is formed on the second insulating layer 190. The common conductive pattern 194 is electrically connected to the second connection pattern 184 through the fourth opening 192 of the second insulating layer 190. The common conductive pattern 194 is electrically connected to the second electrode 165 of the light emitting diode 160 through the second connection pattern 184. In this embodiment, the material of the common conductive pattern 194 is preferably a material with a low resistivity, such as metal, alloy, other suitable materials, or a combination thereof.

In this embodiment, the common conductive pattern 194 is, for example, a light-shielding conductive pattern, and the common conductive pattern 194 does not overlap the light-emitting diode 160, so as not to block the light beam emitted by the light-emitting diode 160 and affect the brightness of the light-emitting diode display 10. Please refer to FIGS. 1I and 2. For example, in this embodiment, the common conductive pattern 194 includes a plurality of branch portions 194 a and at least one busing portion 194 b. Both the branch portion 194a and the confluence portion 194b are disposed outside the pixel opening area 142. The extension direction y of each branch portion 194a and the extension direction x of the confluence portion 194b are staggered. Each branch portion 194a is disposed between the pixel opening regions 142 of two adjacent rows, and is electrically connected to the bus portion 194b. However, the present invention is not limited thereto, and according to other embodiments, the light-shielding common conductive pattern 194 may also be designed as other appropriate patterns. In addition, the present invention does not limit the common conductive pattern 194 to be a light-shielding conductive pattern. In other embodiments, the common conductive pattern 194 may be a light-transmitting conductive pattern.

Referring to FIG. 1M, a protective layer 196 is formed to cover the common conductive pattern 194 and the second insulating layer 190. Here, the light-emitting diode display 10 of this embodiment is completed.

It is worth noting that the pixel definition layer 140 of the light emitting diode display covers the integrated circuit 130. That is, the integrated circuit 130 for driving the light emitting diode 160 is disposed under the pixel definition layer 140. As a result, the integrated circuit 130 is difficult to be detected, which helps to improve the visual effect of the light emitting diode display 10. In addition, since the integrated circuit 130 is disposed under the existing pixel definition layer 140, the light-emitting diode display 10 does not need to move an extra substrate area (area) for the integrated circuit 130 to be installed, and allows the integrated circuit 130 to be provided. More substrate areas (areas) are used by other components (for example, more light-emitting diodes), thereby improving the performance (for example, resolution, brightness, etc.) of the light-emitting diode display 10. In addition, by using the existing pixel definition layer 140 to cover (or package) the integrated circuit 130, the packaging process of the integrated circuit 130 can be omitted, and the manufacturing complexity of the light emitting diode display 10 is not increased.

FIG. 3 is a schematic top view of a light emitting diode display according to another embodiment of the present invention. The light-emitting diode display 10A of FIG. 3 is similar to the light-emitting diode display 10 of FIG. 2. The difference between the two is that multiple light-emitting diodes can be disposed in the same pixel opening 142 of the light-emitting diode display 10A of FIG. 3.体 160。 Body 160. Referring to FIG. 3, a plurality of light emitting diodes 160 located in the same pixel opening 142 are electrically connected to a same pad 132 of the integrated circuit 130. Therefore, when one of the light emitting diodes 160 located in the pixel opening area 142 fails, the other light emitting diode 160 located in the pixel opening 142 can still emit light normally, so that the light emitting diode display 10A maintains the display. Features.

4A to 4K are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to another embodiment of the present invention. The manufacturing process of the light-emitting diode display 10B of FIGS. 4A to 4K is similar to the manufacturing process of the light-emitting diode display 10 of FIGS. 1A to 1M. The main difference between the two is that the light-emitting diode of the light-emitting diode display 10 is different. The body 160 is a horizontal light-emitting diode, and the light-emitting diode 160B of the light-emitting diode display 10B is a vertical light-emitting diode. The manufacturing process of the light emitting diode display 10B of this embodiment is described in detail as follows.

Referring to FIG. 4A, first, a substrate 110 is provided. Please refer to FIGS. 4B and 4C. Next, the integrated circuit 130 is disposed on the substrate 110. In this embodiment, the adhesive layer 120 may be formed on the substrate 110 first, and then the integrated circuit 130 is disposed on the adhesive layer 120 to fix the integrated circuit 130 on the substrate 110.

Referring to FIG. 4D, a predetermined pixel definition layer 140 'is formed. The predetermined pixel definition layer 140 'has a pixel opening area 142 of the light emitting diode display 10B. In a vertical direction z of the substrate 110, the pixel opening region 142 does not overlap the integrated circuit 130. The pixel opening area 142 is located outside the area of the integrated circuit 130. Referring to FIG. 4D and FIG. 4E, the predetermined pixel definition layer 140 'is patterned to form the pixel definition layer 140. The pixel definition layer 140 has a first opening 144. In a vertical direction z of the substrate 110, the first opening 144 of the pixel definition layer 140 overlaps with the pad 132 of the integrated circuit 130, and the first opening 144 of the pixel definition layer 140 does not overlap with the light emitting diode 160B (drawing (Figure 4G) overlap.

Referring to FIG. 4F, a first connection pattern 182B is formed on the pixel definition layer 140. The first connection pattern 182B is electrically connected to the pads 132 of the integrated circuit 130 through the first opening 144 of the pixel definition layer 140. In this embodiment, the first connection pattern 182B may directly cover a part of the sidewall 140 a of the pixel definition layer 140. In addition to the first connection pattern 182B used to electrically connect the pad 132 of the integrated circuit 130 and the first electrode 164 of the light emitting diode 160B (illustrated in FIG. 4G), the first connection pattern 182B can also reflect the light emitting diode. A light beam (not shown) emitted by 160B, so that the light beam is emitted in a specified direction (for example, an upward direction).

Please refer to FIG. 4F. In this embodiment, when the first connection pattern 182B is formed, a reflection pattern 150B may also be formed on the side wall 140a of another part of the pixel definition layer 140 at the same time. In this embodiment, the first connection pattern 182B and the reflection pattern 150B may be formed on the same film layer and electrically isolated from each other. In this embodiment, the reflection pattern 150B may directly cover the sidewall 140 a of another portion of the pixel definition layer 140. The reflection pattern 150B can reflect a light beam (not shown) emitted by the light emitting diode 160B, so that the light beam is emitted in a specified direction (for example, an upward direction).

Please refer to FIG. 4G. Next, the light emitting diode 160B is disposed in the pixel opening region 142 of the pixel definition layer 140, and the light emitting diode 160B and the integrated circuit 130 are electrically connected. The light emitting diode 160B includes a first type semiconductor layer 161, a second type semiconductor layer 162, a light emitting layer 163 disposed between the first type semiconductor 161 and the second type semiconductor layer 162, and the first type semiconductor layer 161 is electrically conductive. The connected first electrode 164 and the second electrode 165 electrically connected to the second-type semiconductor layer 162. In this embodiment, the light emitting layer 163 has a first side (for example, a lower side) and a second side (for example, an upper side) opposite to each other. The substrate 110 is located on the first side (for example, a lower side) of the light emitting layer 163. An electrode 164 and a second electrode 165 are respectively located on a first side (eg, a lower side) of the light emitting layer 163 and a second side (eg, an upper side) of the light emitting layer 163. In other words, the light emitting diode 160B of this embodiment is a vertical light emitting diode.

In this embodiment, the light emitting diode 160B may be disposed on a part of the first connection pattern 182B located in the pixel opening region 142. The first electrode 164 of the light emitting diode 160B is electrically connected to the first connection pattern 182B. The first electrode 164 of the light emitting diode 160B can be electrically connected to the pad 132 of the integrated circuit 130 through the first connection pattern 182B.

Referring to FIG. 4H, a protective material layer 197 'is formed to cover the pixel definition layer 140, the first connection pattern 182B, the reflection pattern 150B, and the light emitting diode 160B. Referring to FIG. 4H and FIG. 4I, a protective material layer 197 'is patterned to form a protective layer 197. The protective layer 197 has a fifth opening 197a. The fifth opening 197a of the protective layer 197 overlaps the second electrode 165 of the light emitting diode 160B.

Referring to FIG. 4J, a common conductive pattern 194B is formed on the protective layer 197. The common conductive pattern 194B is electrically connected to the second electrode 165 of the light emitting diode 160B through the fifth opening 197 a of the protective layer 197. For example, in this embodiment, the common conductive pattern 194B includes a transparent conductive pattern overlapping the light emitting diode 160B, but the present invention is not limited thereto. Referring to FIG. 4K, a protective layer 196 is formed to cover the common conductive pattern 194B and the protective layer 197. At this point, the light-emitting diode display 10B of this embodiment is completed. The light-emitting diode display 10B has similar effects and advantages as the aforementioned light-emitting diode display 10, and will not be repeated here.

5A to 5L are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to another embodiment of the present invention. The manufacturing process of the light emitting diode display 10C of FIGS. 5A to 5L is similar to the manufacturing process of the light emitting diode display 10 of FIGS. 1A to 1M. The main difference between the two is that the light emitting diode of the light emitting diode display 10 The body 160 is a horizontal light-emitting diode, and the light-emitting diode 160C of the light-emitting diode display 10C is a flip-chip light-emitting diode. The manufacturing process of the light emitting diode display 10C of this embodiment is described in detail as follows.

Referring to FIG. 5A, first, a substrate 110 is provided. Please refer to FIGS. 5B and 5C. Next, the integrated circuit 130 is disposed on the substrate 110. In this embodiment, the adhesive layer 120 may be formed on the substrate 110 first, and then the integrated circuit 130 is disposed on the adhesive layer 120 to fix the integrated circuit 130 on the substrate 110.

Referring to FIG. 5D, a predetermined pixel definition layer 140 'is formed. The predetermined pixel definition layer 140 'has a pixel opening area 142 of the light emitting diode display 10C. In a vertical direction z of the substrate 110, the pixel opening region 142 does not overlap the integrated circuit 130. The pixel opening area 142 is located outside the area of the integrated circuit 130. Referring to FIG. 5D and FIG. 5E, the predetermined pixel definition layer 140 'is patterned to form the pixel definition layer 140. The pixel definition layer 140 has a first opening 144. The first opening 144 of the pixel definition layer 140 is located outside the area of the light emitting diode 160C (illustrated in FIG. 5H) and overlaps the pad 132 of the integrated circuit 130.

Referring to FIG. 5F, a first connection pattern 182C and a second connection pattern 184C are formed on the pixel definition layer 140. The first connection pattern 182C and the second connection pattern 184C are structurally separated, and respectively cover two opposite sidewalls 140 a of the pixel definition layer 140. The first connection pattern 182C is electrically connected to the pads 132 of the integrated circuit 130 through the first opening 144 of the pixel definition layer 140.

Please refer to FIG. 5G to FIG. 5H. Next, the light emitting diode 160C is set in the pixel opening area 142 of the pixel definition layer 140, and the light emitting diode 160C is electrically connected to the integrated circuit 130. For example, as shown in FIG. 5G, in this embodiment, portions of the first connection pattern 182C located in the pixel opening region 142 and portions of the second connection pattern 184C located in the pixel opening region 142 may be formed respectively. Conductive paste 198a and conductive paste 198b; then, the light emitting diode 160C is disposed on the first connection pattern 182C and the second connection pattern 184C located in the pixel opening area 142, so that the first electrode of the light emitting diode 160C 164 and the second electrode 165 are electrically connected to the first connection pattern 182C and the second connection pattern 184C through the conductive adhesive 198a and the conductive adhesive 198b, respectively.

5H, the light emitting diode 160C includes a first type semiconductor layer 161, a second type semiconductor layer 162, a light emitting layer 163 disposed between the first type semiconductor 161 and the second type semiconductor layer 162, and a first type The first electrode 164 electrically connected to the semiconductor layer 161 and the second electrode 165 electrically connected to the second-type semiconductor layer 162. In this embodiment, the second type semiconductor layer 162 has a first side (eg, a lower side) and a second side (eg, an upper side) opposite to each other, and the substrate 110, the first electrode 164, and the second electrode 165 are located on the second type. A first side (eg, a lower side) of the semiconductor layer 162. In other words, in this embodiment, the light emitting diode 160C is a flip-chip light emitting diode.

Referring to FIG. 5I, a protective material layer 199 'is formed to cover the pixel definition layer 140, the first connection pattern 182C, the second connection pattern 184C, and the light emitting diode 160C. Referring to FIG. 5I and FIG. 5J, a protective material layer 199 'is patterned to form a protective layer 199. The protective layer 199 has a sixth opening 199a. The sixth opening 199a overlaps the second connection pattern 184C. In this embodiment, the sixth opening 199a may be located outside the pixel opening area 142, but the present invention is not limited thereto.

Referring to FIG. 5K, a common conductive pattern 194C is formed on the protective layer 199. The common conductive pattern 194C is electrically connected to the second connection pattern 184C through the sixth opening 199a of the protective layer 199. The second connection pattern 184C is electrically connected between the common conductive pattern 194C and the second electrode 165 of the light emitting diode 160C. In this embodiment, the first connection pattern 182C is used to electrically connect the integrated circuit 130 and the first electrode 164 of the light emitting diode 160C, and the second connection pattern 184C is used to electrically connect the second electrode of the light emitting diode 160C. 165 and the common conductive pattern 194C; in addition, the first connection pattern 182C and the second connection pattern 184C can also reflect the light beam emitted by the light emitting diode 160C, so that the light beam is emitted in a specified direction, thereby improving the light emitting diode display. 10C brightness.

Referring to FIG. 5L, a protective layer 196 is formed to cover the common conductive pattern 194C and the protective layer 199. At this point, the light-emitting diode display 10C of this embodiment is completed. The light-emitting diode display 10C has similar functions and advantages as the aforementioned light-emitting diode display 10, and will not be repeated here.

In summary, the pixel definition layer of the light-emitting diode display according to an embodiment of the present invention covers the integrated circuit. That is, the integrated circuit for driving the light emitting diode is disposed under the pixel definition layer. As a result, the integrated circuit is difficult to be detected, which helps to improve the visual effect of the light emitting diode display. In addition, since the integrated circuit is arranged under the existing pixel definition layer, the light emitting diode display does not need to move an extra substrate area (area) for the integrated circuit to be set, and can allow more substrate areas. (Area) is used by other components (for example, more light-emitting diodes), thereby improving the performance of the light-emitting diode display (for example, resolution, brightness, etc.). In addition, by using the existing pixel definition layer to cover (or package) the integrated circuit, the packaging process of the general integrated circuit can be omitted, and the manufacturing complexity of the light emitting diode display is not increased.

Although the present invention has been disclosed as above with the examples, it is not intended to limit the present invention. Any person with ordinary knowledge in the technical field can make some modifications and retouching without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

10, 10A, 10B, 10C ‧‧‧ LED display

110‧‧‧ substrate

120‧‧‧ Adhesive layer

130‧‧‧Integrated Circuit

130a‧‧‧ Underside

130b‧‧‧Top

130c, 140a‧‧‧ sidewall

132‧‧‧ pad

140’‧‧‧ predetermined pixel definition layer

140‧‧‧ pixel definition layer

142‧‧‧Pixel open area

144‧‧‧First opening

150, 150B‧‧‧Reflection pattern

160, 160B, 160C‧‧‧ Light-emitting diodes

161‧‧‧The first type semiconductor layer

162‧‧‧Second type semiconductor layer

163‧‧‧Light-emitting layer

164‧‧‧First electrode

165‧‧‧Second electrode

170’‧‧‧first insulating material layer

170‧‧‧The first insulation layer

174‧‧‧Second Opening

176‧‧‧Contact window

178‧‧‧ third opening

182, 182B, 182C‧‧‧First connection pattern

184, 184B‧‧‧Second connection pattern

190’‧‧‧second insulating material layer

190‧‧‧Second insulation layer

192‧‧‧ Fourth opening

194, 194B, 194C‧‧‧ Shared conductive pattern

194a‧‧‧ branch

194b‧‧‧Confluence Department

196, 197, 199‧‧‧ protective layer

199’‧‧‧ protective material layer

197a‧‧‧Fifth opening

198a, 198b‧‧‧ conductive adhesive

199a‧‧‧Sixth opening

A-A’‧‧‧ hatched

H1‧‧‧thickness

H2‧‧‧ height

x, y, z‧‧‧ directions

1A to 1M are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to an embodiment of the present invention. FIG. 2 is a schematic top view of a light emitting diode display according to an embodiment of the present invention. FIG. 3 is a schematic top view of a light emitting diode display according to another embodiment of the present invention. 4A to 4K are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to another embodiment of the present invention. 5A to 5L are schematic cross-sectional views illustrating a manufacturing process of a light emitting diode display according to another embodiment of the present invention.

Claims (14)

A light-emitting diode display includes: a substrate; an integrated circuit disposed on the substrate; a pixel definition layer covering the integrated circuit and having a pixel opening area, wherein a vertical area on the substrate In the direction, the pixel opening area does not overlap the integrated circuit; and at least one light emitting diode is disposed in the pixel opening area of the pixel definition layer and is electrically connected to the integrated circuit. The light-emitting diode display according to item 1 of the scope of patent application, wherein the integrated circuit has a bottom surface near the substrate, a top surface remote from the substrate, and a side wall connected between the bottom surface and the top surface. , And the pixel definition layer shields the top surface of the integrated circuit and the sidewall of the integrated circuit. The light-emitting diode display according to item 1 of the scope of patent application, wherein the integrated circuit has a bottom surface near the substrate, a top surface remote from the substrate, and a side wall connected between the bottom surface and the top surface. , And the pixel definition layer is in contact with the top surface of the integrated circuit. The light-emitting diode display according to item 1 of the patent application scope, wherein the integrated circuit has a pad, and the pixel defining layer further has a first opening, and the first opening of the pixel defining layer and the The pads of the integrated circuit overlap, and the light emitting diode display further includes: a first connection pattern, a portion of the first connection pattern is located in the first opening of the pixel definition layer, and the at least one The light emitting diode is electrically connected to the pad of the integrated circuit through the first connection pattern. The light-emitting diode display according to item 4 of the scope of patent application, wherein the pixel definition layer has a side wall defining an opening area of the pixel, and the light-emitting diode display further includes: at least one reflection pattern, and On the sidewall of the pixel definition layer; and a first insulating layer covering the at least one light emitting diode, the at least one reflection pattern and the pixel definition layer, and having the first and second pixel definition layers A second opening overlaps an opening, and the first connection pattern of another part is disposed on the first insulating layer and located in the second opening and the pixel opening area. The light-emitting diode display according to item 5 of the scope of patent application, wherein the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode, and the light-emitting layer has a first side and an opposite side. A second side, the substrate is located on the first side of the light emitting layer, the first electrode and the second electrode are located on the second side of the light emitting layer, and the first electrode of the at least one light emitting diode is transmitted through The first connection pattern is electrically connected to the pad of the integrated circuit. The light-emitting diode display according to item 6 of the patent application, wherein the first insulating layer further has a third opening, and the light-emitting diode display further includes: a second connection pattern disposed on the first On the insulating layer and electrically connected to the second electrode of the at least one light emitting diode through the third opening; and a common conductive pattern electrically connected to the second connection pattern so as to be in contact with the at least one light emitting diode The second electrode of the electrode body is electrically connected. The light-emitting diode display according to item 7 of the scope of patent application, further comprising: a second insulation layer covering the first connection pattern, the second connection pattern, and the first insulation layer, wherein the second insulation layer There is a fourth opening, and the common conductive pattern is electrically connected to the second connection pattern through the fourth opening. The light-emitting diode display according to item 4 of the scope of patent application, wherein the pixel definition layer has a sidewall defining the pixel opening area, and the first connection pattern directly covers a part of the pixel definition layer. The sidewall. The light-emitting diode display according to item 9 of the scope of patent application, wherein the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode, and the light-emitting layer has an opposite first side and A second side, the substrate and the first electrode are located on the first side of the light emitting layer, the second electrode is located on the second side of the light emitting layer, and the light emitting diode display further includes: a protective layer, disposed A fifth opening overlapping the second electrode of the at least one light emitting diode on the pixel definition layer, the first connection pattern and the at least one light emitting diode; and a common conductive pattern, It is disposed on the protective layer, wherein the common conductive pattern is electrically connected to the second electrode of the at least one light emitting diode through the fifth opening. The light-emitting diode display according to item 9 of the scope of patent application, wherein the at least one light-emitting diode has a light-emitting layer, a first electrode, and a second electrode, and the light-emitting layer has an opposite first side and A second side, the substrate, the first electrode, and the second electrode are located on the first side of the light emitting layer, and the light emitting diode display further includes: a second connection pattern covering the pixel definition layer The other part of the side wall is electrically connected to the second electrode of the at least one light emitting diode, wherein the first connection pattern is structurally separated from the second connection pattern; a protective layer covers the pixel definition Layer, the first connection pattern, the at least one light emitting diode and the second connection pattern, wherein the protection layer has a sixth opening; and a common conductive pattern is disposed on the protection layer, wherein the common conductive pattern Is electrically connected to the second connection pattern through the sixth opening. The light-emitting diode display according to item 1 of the scope of the patent application, wherein the optical density value of the pixel definition layer is OD, and 3 ≤ OD ≤ 4. The light-emitting diode display according to item 1 of the patent application scope, wherein the pixel definition layer has a thickness H1 and 600 μm ≤ H1 ≤ 700 μm. The light-emitting diode display according to item 1 of the scope of patent application, wherein the material of the pixel definition layer includes a dark insulating material.