KR20210006567A - Led lighting device package and display panel using the same - Google Patents

Abstract

An embodiment of the present invention provides a light emitting device package comprising: a plurality of light emitting structures, spaced apart from each other, each of the plurality of light emitting structures having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface provided by the first conductivity-type semiconductor layer, and a second surface positioned in the direction opposite to the first surface and provided by the second conductivity-type semiconductor layer; a common first electrode connecting each of the first conductivity-type semiconductor layers of the plurality of light emitting structures to each other, extended in parallel with the first surfaces and the second surfaces of the plurality of light emitting structures at a different level, and including at least one between tungsten (W) and tungsten silicide (WS); a plurality of second electrodes disposed on the second surfaces of the plurality of light emitting structures, and connected to respective second conductivity-type semiconductor layers of the plurality of light emitting structures; a plurality of wavelength converters disposed on the first surfaces and spaced apart from each other to correspond to the plurality of light emitting structures, respectively; and a molded portion covering the side surfaces of the plurality of light emitting structures and the side surfaces of the plurality of wavelength converters, having a partition wall structure separating the plurality of wavelength converters from each other, and including a material having a modulus lower than the plurality of light emitting structures. The present invention can reduce manufacturing costs and obtain miniaturization.

Description

Light-emitting device package and display panel using the same {LED LIGHTING DEVICE PACKAGE AND DISPLAY PANEL USING THE SAME}

The technical idea of the present invention relates to a light emitting device package and a display panel using the same.

Semiconductor light emitting diodes (LEDs) are used not only as light sources for lighting devices, but also as light sources for various electronic products. In particular, it is widely used as a light source for various display panels such as TVs, mobile phones, PCs, notebook PCs, and PDAs.

Conventional display panels are mainly composed of a display panel composed of a liquid crystal display (LCD) and a backlight, but recently, an LED element is used as one pixel, and a backlight is not required. Such a display panel can be not only compact, but also a high-brightness display having superior light efficiency compared to conventional LCDs. In addition, since the aspect ratio of the display screen can be freely changed and implemented in a large area, various types of large displays can be provided.

One of the problems to be solved of the present invention is to provide a method of manufacturing a light emitting device package and a display panel, which reduces manufacturing cost and facilitates miniaturization.

Further, it is to provide a method of manufacturing a flexible display panel.

According to an embodiment of the present invention, a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer are respectively provided, and are disposed to be spaced apart from each other, and a first surface provided by the first conductive type semiconductor layer and the first A plurality of light emitting structures disposed in a direction opposite to the surface and having a second surface provided by the second conductivity type semiconductor layer; Each of the first conductivity-type semiconductor layers of the plurality of light emitting structures are connected to each other, extending parallel to the first and second surfaces at different levels, and including at least one of tungsten (W) and tungsten silicide (WS). A common first electrode made of a material; A plurality of second electrodes disposed on the second surfaces of the plurality of light emitting structures and connected to respective second conductivity type semiconductor layers of the plurality of light emitting structures; A plurality of wavelength converters disposed on the first surface to correspond to each of the plurality of light emitting structures; And a molding part made of a material having a lower modulus than the plurality of light-emitting structures, having a partition wall structure that covers the side surfaces of the plurality of light-emitting structures and the plurality of wavelength conversion parts and separating the plurality of wavelength conversion parts from each other. It provides a light emitting device package including;

An embodiment of the present invention includes a plurality of light emitting device packages arranged in rows and columns, each of the plurality of light emitting device packages comprising: a first substrate structure providing at least one pixel; And a second substrate structure including a plurality of TFT cells each corresponding to the plurality of light emitting device packages, and attached to a lower portion of the first substrate structure, wherein the plurality of light emitting device packages are each of a first conductivity type. The second conductivity-type semiconductor having a semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed to be spaced apart from each other, and disposed in a direction opposite to the first surface and the first surface provided by the first conductivity-type semiconductor layer A plurality of light emitting structures each having a second surface provided by a layer and constituting a plurality of sub-pixels forming the pixel; A common first electrode connecting each of the first conductivity-type semiconductor layers of the plurality of light emitting structures to each other and extending parallel to the first and second surfaces at different levels; A plurality of second electrodes disposed on the second surfaces of the plurality of light emitting structures and connected to respective second conductivity type semiconductor layers of the plurality of light emitting structures; A plurality of wavelength converters disposed on the first surface to correspond to each of the plurality of light emitting structures; A molding part covering side surfaces of the plurality of light emitting structures and the plurality of wavelength conversion parts; And a first electrode pad and a second electrode pad penetrating the molding part to connect the common first electrode and the plurality of second electrodes to a connection part of the second substrate structure, respectively.

The method of manufacturing a light emitting device package and a display panel using the same according to the technical idea of the present invention has the effect of reducing the time required for manufacturing and facilitating miniaturization.

In addition, it is possible to provide a method of manufacturing a flexible display panel.

However, the various and beneficial advantages and effects of the present invention are not limited to the above-described contents, and may be more easily understood in the course of describing specific embodiments of the present invention.

1 is a schematic perspective view of a display panel having a light emitting device package according to an embodiment of the present invention.
FIG. 2 is a plan view showing an enlarged portion'A' of FIG. 1.
3 is a side cross-sectional view taken along line II′ of FIG. 2.
4A is an enlarged view of part'B' of FIG. 3.
4B is a comparative example of the display panel of FIG. 4A.
5 is a side cross-sectional view of a display panel according to an exemplary embodiment of the present invention.
6 to 16 are views schematically illustrating a main manufacturing process of the display panel of FIG. 3.
17 to 20 are diagrams schematically illustrating main manufacturing processes of the display panel of FIG. 5.

Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic perspective view of a display panel having a light emitting device package according to an embodiment of the present invention, and FIG. 2 is a plan view showing an enlarged portion'A' of FIG. 1. 3 is a side cross-sectional view taken along line II′ of FIG. 2, and FIG. 4A is an enlarged view of portion “B” of FIG. 3.

Referring to FIG. 1, a display panel 1 according to an exemplary embodiment of the present invention includes a first substrate structure 100 made of a light emitting device package, and is disposed under the first substrate structure 100 and includes a driving circuit part. The second substrate structure 300 may be included. The protective layer 400 may be disposed on the upper surface of the first substrate structure 100, and the bonding layer 200 may be disposed between the first substrate structure 100 and the second substrate structure 300. The display panel 1 may have a rectangular shape or other suitable shape. The display panel 1 may have a flexible characteristic. Accordingly, the upper surface of the display panel 1 may have a curved profile in addition to a flat surface. The display panel 1 according to an exemplary embodiment may be a display panel of ultra-miniature and ultra-high resolution used for a headset for virtual reality or augmented reality.

Referring to FIG. 2, the first substrate structure 100 may include a pixel region 10 and a molding region 20 surrounding the pixel region 10. A plurality of pixels P may be arranged in the pixel area 10 to form a column and a column. A plurality of pixels P according to the present embodiment are shown to form a 15×15 rectangular array, but the number of rows and columns is any appropriate number (e.g. 1024×768, 1920×1080, 3840×2160). , 7680×4320), and may be arranged in various shapes other than a square. The plurality of pixels P may be electrically connected to each other. In addition, the plurality of pixels P may not be separately manufactured, but may be entirely manufactured at once in the same process.

In one embodiment, the plurality of pixels P may be disposed to have a density of 8000 pixels per inch (PPI) or more. Each of the plurality of pixels P may have a width of about 3 μm or less.

A molding area 20 may be disposed around the pixel area 10. The molding area 20 may include a black matrix. For example, the black matrix may be disposed in a circumferential area of the first substrate structure 100 to serve as a guide line defining a region in which a plurality of pixels P are disposed. The black matrix is not limited to black color, and can be used in other colors such as white matrix or green depending on the purpose and use of the product, and a transparent matrix may be used if necessary. . The pad portion 170NC of the common first electrode 170N to be described later may be disposed in the molding area 20.

3 and 4A, a plurality of pixels P may include a first substrate structure 100 and a second substrate structure 300 stacked vertically, respectively. The first substrate structure 100 and the second substrate structure 300 may be bonded to each other by the bonding layer 200. The protective layer 400 may be bonded to the top of the first substrate structure 100. The first substrate structure 100 and the second substrate structure 300 may be bonded to each other at the wafer level by a wafer bonding method such as fusion bonding to be integrated.

The plurality of pixels P may be formed of a plurality including first and second pixels P1 and P2. Hereinafter, for convenience of description, the first and second pixels P1 and P2 will be mainly described. Each of the first and second pixels P1 and P2 may include a plurality of sub-pixels SP1, SP2, and SP3, and the plurality of sub-pixels SP1, SP2, and SP3 each emit first to third semiconductor light. It may include one of the parts (LED1, LED2, LED3). In one embodiment, each of the plurality of sub-pixels SP1, SP2, and SP3 may have a width WD of about 1.2 μm or less.

The first substrate structure 100 may include a light emitting device package LP1 including first to third semiconductor light emitting units LED1, LED2, and LED3. The light emitting device package LP1 includes first and second electrode pads 175N and 175P respectively connected to first to third semiconductor light emitting units LED1, LED2, and LED3, and first to third semiconductor light emitting units LED1, First to third wavelength conversion units 190R, 190G, 190B respectively disposed on LED2 and LED3, semiconductor light emitting units LED1, LED2, LED3, and first to third wavelength conversion units 190R, 190G, 190B ) May include a molding unit 160 for sealing. The molding part 160 may include a first molding part 161, a second molding part 161, and a third molding part 163.

The first to third semiconductor light emitting units (LED1, LED2, and LED3) emit light in which epitaxial layers such as a first conductivity type semiconductor layer 131, an active layer 132, and a second conductivity type semiconductor layer 133 are stacked, respectively. It may include a structure 130. These epitaxial layers can be grown on one wafer by the same process. Accordingly, the active layer 132 of the first to third semiconductor light emitting units LED1, LED2, and LED3 may be configured to emit the same light. For example, the active layer 132 may emit blue light (eg, 440 nm to 460 nm). The first to third semiconductor light emitting units LED1, LED2, and LED3 may have the same structure.

The first conductivity type semiconductor layer 131 and the second conductivity type semiconductor layer 133 may be an n-type semiconductor layer and a p-type semiconductor layer, respectively. For example, it may be a nitride semiconductor of Al _x In _y Ga _(1-xy) N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). The active layer 132 may include a multiple quantum well (MQW) structure in which a quantum well layer and a quantum barrier layer are alternately stacked with each other. For example, the active layer 132 may be a nitride-based MQW such as InGaN/GaN or GaN/AlGaN, but is not limited thereto, and may be another semiconductor such as GaAs/AlGaAs or InGaP/GaP, and GaP/AlGaP. Of these, only a portion of the first conductivity-type semiconductor layer 131 may be etched to have a stepped side surface.

Further, referring to FIG. 4A, in the light emitting structure 130, the width W1 of the first surface S1 in contact with the wavelength conversion unit 190R is wider than the width W3 of the second surface S2 at the bottom. Can be formed. In addition, the width W1 of the upper surface of the light emitting structure 130 is formed to be smaller than the width W2 of the wavelength conversion unit 190R, and thus may be limitedly disposed in a region overlapping the wavelength conversion unit 190R. Due to this structure, among the light emitted from the active layer 132 of the light emitting structure 130, the light directed to the upper wavelength conversion unit 190R can be emitted through the wavelength conversion unit 190R without any obstacles on the optical path. have. That is, the first conductivity type semiconductor layer 131 may have a structure in which a first lower conductivity type semiconductor layer 131B having a narrower width is disposed under the first upper conductivity type semiconductor layer 131A. Also, the first upper conductivity type semiconductor layer 131A may be disposed to protrude to a predetermined thickness D on the first molding part 161 to be described later.

An insulating layer 150 is disposed on the side of the light emitting structure 130 to block optical interference between the plurality of light emitting structures 130 and electrically separate them from each other. In addition, the insulating layer 150 may be disposed to come into contact with the common first electrode 170N, which will be described later. The insulating layer 150 may be made of an electrically insulating material. For example, the insulating layer 150 may be silicon oxide, silicon oxynitride, or silicon nitride. In addition, the insulating layer 150 may additionally include a material having a low light absorption or reflective property or a reflective structure.

A common first electrode 170N and a second electrode 141 may be disposed on the first conductivity type semiconductor layer 131 and the second conductivity type semiconductor layer 133, respectively. The common first electrode 170N may connect each of the first conductivity type semiconductor layers 131 included in the plurality of light emitting structures 130 to each other. It may include first and second electrode pads 175N and 175P for applying power to each of the first to third semiconductor light emitting units LED1, LED2, and LED3. The first and second electrode pads 175N and 1750P may be connected to the common first and second electrodes 170N and 141, respectively.

2 and 4A, the common first electrode 170N may include an individual electrode part 170NA, a pad part 170NC, and a connection part 170NB. The individual electrode portions 170NA are disposed in a region overlapping the plurality of light emitting structures 130 and may be connected to each of the first conductivity type semiconductor layers 131. Each of the individual electrode parts 170NA is arranged in a ring shape to surround the circumference of the second lower conductive type semiconductor layer 131B on the surface of the first upper conductive type semiconductor layer 131A of the light emitting structure 130, respectively. I can. Through such a structure, the distribution of the current supplied to the light emitting structure 130 from the individual electrode parts 170NA can be achieved quickly.

The pad unit 170NC may be disposed on the molding area 20 of the display panel so as not to overlap the plurality of light emitting structures 130. For example, the pad unit 170NC may be disposed at each corner of the display panel 1. The connection part 170NB may connect a plurality of individual electrode parts 170NA, and may connect the individual electrode part 170NA and the pad part 170NC.

The common first electrode 170N is disposed on a surface parallel to the first surface S1 and the second surface S2 of the light emitting structure 130, so that the plurality of first conductivity type semiconductor layers 131 are lateral to each other. Can be electrically connected. Accordingly, the first electrode pad 175N and the second electrode pad 175P disposed to apply power to the common first electrode 170N and the second electrode 141 may be configured to be disposed in different regions. . That is, the first electrode pad 175N may be disposed to contact the pad unit 170NC disposed on the molding area 20 of the display panel 1, and the second electrode pad 175P may include a plurality of light emitting structures ( 130) may be disposed below each. The common first electrode 170N may be made of a material having a high melting point such as tungsten (W) and tungsten silicide (WS). The common first electrode 170N is buried in the first conductivity type semiconductor layer 131 during the manufacturing process and then exposed through a process of etching a partial region of the first conductivity type semiconductor layer 131. In order to improve the contact performance of the laminate, it undergoes a high-temperature heat treatment process. Materials having a high melting point, such as tungsten (W) and tungsten silicide (WS), do not dissolve during this process, but materials with a relatively low melting point may be damaged during high-temperature heat treatment and may lose their function as an electrode. .

The molding unit 160 includes a first molding unit 161 and first to third wavelength conversion units 190R, 190G, and 190B covering side surfaces of the first to third semiconductor light emitting units LED1, LED2, and LED3. The second molding part 162 having a partition wall structure protruding between the first to third semiconductor light emitting parts LED1, LED2, and LED3 to be separated from each other, and the first and second electrodes covering the first molding part 161 A third molding part 163 to which the pads 175N and 175P are exposed may be included.

The molding unit 160 may be made of a material having a low modulus so that the first substrate structure 100 has a flexible characteristic. In particular, the first molding part 161 may be made of a material having a lower modulus than the light emitting structure 130 and having a high tensile property. For example, the first molding part 161 includes one of polyimide (PI), polycyclohexylenedimethylene terephthalate (PCT), and epoxy molding compound (EMC). It can be made of material. In addition, the first molding part 161 may include light reflective particles for reflecting light. Titanium dioxide (TiO ₂ ) or aluminum oxide (Al ₂ O ₃ ) may be used as the light reflective particles, but the present invention is not limited thereto.

In one embodiment, the first molding part 161 may be formed of polycyclohexylenedimethylene terephthalate (PCT) having high reflectivity and a white epoxy molding compound (white EMC). In this case, a sufficient light reflection effect can be expected with only the first molding part 161 without a separate reflective layer. However, since such a material has a melting point of 230°C or less, it can be melted in a bonding process performed at a temperature of 350°C or more. In this case, the first molding part 161 may lose its function as a molding due to its deformation. Accordingly, under the first molding part 161, a third molding part 163, which is a material layer such as polyimide (PI) having a melting point of a degree that does not melt in the bonding process, is formed, and the first molding Even if the part 161 is melted in the bonding process, it can maintain its appearance and maintain its function as a molding.

The second molding unit 162 is formed in a partition wall structure that surrounds and separates the side surfaces of the first to third wavelength conversion units 190R, 190G, and 190B, so that the first to third semiconductor light emitting units LED1, LED2, and Each of the first to third wavelength conversion units 190R, 190G, and 190B may be disposed above the LED3) to be separated from each other. Accordingly, the light emitted from the first to third semiconductor light emitting units (LED1, LED2, LED3) does not receive optical interference from each other, and is disposed above the first to third semiconductor light emitting units (LED1, LED2, LED3). It may be emitted through the first to third wavelength conversion units 190R, 190G, and 190B. The second molding part 162 may be made of a material including a black matrix. A reflective layer 182 made of a metal material such as tungsten (W) and tungsten silicide (WS) may be disposed on the upper surface of the second molding part 161.

Each of the first to third wavelength converting units 190R, 190G, and 190B is in a state in which a wavelength converting material such as quantum dots (QD) is dispersed in a liquid binder resin, in the partition wall structure of the molding unit 160. It may be filled and cured. In one embodiment, the first and second wavelength conversion units 190R and 190G may include quantum dots capable of converting blue light into red light and green light, respectively, and the third wavelength conversion unit 190B does not have a separate quantum dot. Only binder resin can be included.

Specifically, the first and second wavelength conversion units 190R and 190G may be formed by filling a liquid photosensitive resin composition in which red quantum dots and green quantum dots are dispersed in a binder resin, respectively, in a partition wall structure, and then curing. The binder resin may be made of a material containing an acrylic polymer.

A protective layer 400 for preventing deterioration of the first to third wavelength converting units 190R, 190G, and 190B may be disposed on the first to third wavelength converting units 190R, 190G, and 190B.

A bonding layer 200 for bonding to the second substrate structure 300 may be disposed under the first substrate structure 100. The bonding layer 200 may include an insulating bonding layer 210 and a conductive bonding layer 220, and the insulating bonding layer 210 may bond the first substrate structure 100 and the second substrate structure 300 to each other. I can. The insulating bonding layer 210 may be made of a material having the same composition as the molding part 160 of the first substrate structure 100. The conductive bonding layer 220 is for bonding the first and second electrode pads 175N and 175P of the first substrate structure 300 to the electrodes of the second substrate structure 300, and the first and second electrodes It may be made of a conductive material having the same composition as the pads 175N and 175P. Accordingly, the first substrate structure 100 and the second substrate structure 300 may be bonded to each other through the bonding layer 200 to be integrated.

The second substrate structure 300 may include a driving circuit including a plurality of TFT cells for controlling the light emitting device package LP1 of the first substrate structure 100. The plurality of TFT cells can constitute a TFT circuitry for controlling driving of the plurality of pixels P. The plurality of TFT cells may be connected to correspond to the first to third semiconductor light emitting units LED1, LED2, and LED3, respectively, through the conductive bonding layer 220 of the bonding layer 200. The plurality of TFT cells may be connected to the semiconductor substrate. For example, a semiconductor layer constituting a plurality of TFT cells may include a semiconductor oxide such as polysilicon and a silicon-based semiconductor, an indium gallium zinc oxide, or a compound semiconductor such as silicon germanium. Can contain

The display panel 1 according to an exemplary embodiment has an advantage of having an excellent aperture ratio compared to a case where a partition wall structure using a silicon substrate is used. This will be described with reference to FIGS. 4A and 4B. 4B shows a comparative example in which a partition wall structure 2180 made of a silicon substrate is employed.

Referring to FIG. 4B, in the case of the comparative example, as the pixel density of the pixel increases, the ratio of the height L of the partition wall structure 2180 and the width W5 of the light emission window LW gradually increases, so that the aperture ratio ) Is getting lower and lower. Even if the pixel density is increased and the pixels are miniaturized, the thickness W4 of the partition wall structure 2180 cannot be reduced to less than a predetermined value in order to maintain the structural rigidity of the partition wall structure 2180. That is, as the pixel density increases and the size of the pixel P decreases, the light emission window LW formed in the partition wall structure 2180 becomes long and narrow vertically, and the shape of the wavelength conversion part 2190 is also narrow. It will be formed long. Accordingly, while the light L2 emitted from the active layer 2132 travels along a long emission path, a problem occurs in that the luminance is lowered.

In addition, as the width W5 of the light emission window LW decreases, the ratio of the area A1 where the partition wall structure 2180 and the semiconductor stack 2130 overlap each other due to tolerance in the manufacturing process increases. , In the region A1 where the partition structure 2180 and the semiconductor stack 2130 overlap each other, the light L3 is absorbed by the partition structure 2180 or reflected downward, and cannot be emitted through the light emission window LW. Therefore, when the ratio of the area A1 where the partition structure 2180 and the semiconductor stack 2130 overlap each other increases, the overall luminance of the display panel decreases.

In the case of an embodiment, it is possible to form a wavelength conversion unit having a thickness that is much thinner than that of the silicon barrier structure by replacing the partition wall structure using a silicon substrate with a molding unit containing a material having a high reflectivity. Accordingly, the problem of lowering the luminance in the process of passing through the narrow and long wavelength converter can be solved.

In addition, since the partition wall structure is thinner, the area of the wavelength conversion unit can be formed to be wider than that of the semiconductor laminate 2130, so that the problem that the light emitted from the active layer 2132 is blocked by the partition wall structure can be fundamentally solved.

5 is a cross-sectional view of a display panel 2 having a light emitting device package LP2 according to an embodiment of the present invention. In the display panel 2 of FIG. 6, compared to the display panel 1 of the above-described embodiment, the first molding part 1161 is formed of PI, and the reflectance is relatively low compared to PCT or EMC. There is a difference in that the reflective layer 1200 for improving the reflectance is formed on the side surfaces of the first to third semiconductor light emitting units LED4, LED5, and LED6. In addition, the insulating layer 1100 is disposed between the reflective layer 1200 and the first to third semiconductor light emitting units LED4, LED5, and LED6 to form the reflective layer 1200 and the first to third semiconductor light emitting units LED4 and LED5. , LED6) can be insulated. Other than that, since it is similar to the embodiment described above, a redundant description will be omitted.

Hereinafter, a manufacturing process of a display panel according to an exemplary embodiment will be described. 6 to 16 are views schematically illustrating a main manufacturing process of the display panel of FIG. 3.

First, referring to FIG. 6, a buffer layer 120 may be formed on the growth substrate 110, and a first upper conductivity type semiconductor layer 131A may be formed on the buffer layer 120. An electrode pattern for forming a common first electrode 170N may be formed on an upper surface of the first upper conductive type semiconductor layer 131A, as shown in FIG. 7, and a common material is formed at the edge of the first upper conductive type semiconductor layer 131A. The pad portion 170NC of the first electrode 170N may be disposed, and individual electrode portions 170NA may be disposed in regions where a plurality of light emitting structures will be formed in a subsequent process. In addition, the pad unit 170NC and the individual electrode unit 170NA are connected through the connection unit 170NB, so that the pad unit 170NC and the individual electrode unit 170NA may be electrically connected. As the common first electrode 170N, tungsten (W) and tungsten silicide (WS) having a melting point high enough to not melt in a high temperature semiconductor heat treatment process may be used.

Referring to FIG. 8, a first lower conductivity type semiconductor layer 131B may be formed on the first upper conductivity type semiconductor layer 131A to cover the common first electrode 170N. The first upper conductivity type semiconductor layer 131A and the first lower conductivity type semiconductor layer 131B may be formed of a semiconductor layer having the same composition and may be integrated into the first conductivity type semiconductor layer 131. Accordingly, the common first electrode 170N may be buried in the first conductivity type semiconductor layer 131. Subsequently, an active layer 132 and a second conductivity type semiconductor layer 133 may be formed on the first conductivity type semiconductor layer 131.

Referring to FIG. 9, a second electrode 141 may be formed on the second conductivity type semiconductor layer 133, and a hard mask layer 142 may be formed on the second electrode 141. The hard mask layer 142 may prevent the second electrode 141 from being damaged in a subsequent process.

Referring to FIG. 10, by using the common first electrode 170N as an etching mask, etching may be performed until the common first electrode 170N is exposed. Through this, the mesa region M may be formed by etching the partial region E of the light emitting structure 130. Referring to FIG. 11, an insulating layer 150 may be formed on a side surface of the light emitting structure 130.

Referring to FIG. 12, a first molding part 161 may be formed to cover the light emitting structure 130 and a second molding part 162 may be formed on the first molding part 161. 13, a first electrode pad 175N and a second electrode in contact with the common first electrode 170N and the second electrode 141 by etching a region of the second molding part 162 and plating a conductive material An electrode pad 175P may be formed.

Referring to FIG. 14, a second substrate structure 300 having an insulating bonding layer 210 and a conductive bonding layer 220 disposed below the second molding part 162 of FIG. 13 is interposed therebetween. Can be attached. 14 may be understood that the first electrode pad 175N and the second electrode pad 175P of FIG. 13 are inverted to be disposed on a lower surface. The second substrate structure 300 may include a driving circuit including a plurality of TFT cells for controlling the first to third semiconductor light emitting units LED1, LED2, and LED3. The plurality of TFT cells may include a semiconductor layer formed by implanting impurities into a semiconductor substrate. For example, the semiconductor layer constituting the plurality of TFT cells may include polysilicon and a silicon-based semiconductor, a semiconductor oxide such as indium gallium zinc oxide, or a compound semiconductor such as silicon germanium. In order to secure etch selectivity in the subsequent process of separating the growth substrate 110, the semiconductor substrate may be doped with boron at a concentration of 10 ¹⁶ /cm ^-3 or less, which is a lower concentration than the concentration doped in the growth substrate 110. I can.

15, after separating the growth substrate from the first to third semiconductor light emitting units (LED1, LED2, LED3) and then wet etching, the first to third semiconductor light emitting units (LED1, LED2, LED3) are connected to each other. Separating isolation (ISO) process can be performed.

Referring to FIG. 16, the second molding part 162 is formed by applying a black matrix on the top of the light emitting structure 130, and after depositing the reflective layer 182, a region is etched to convert the wavelength in a subsequent process. The grooves 183A, 183B, and 183C for forming the portion 190 may be formed. Subsequently, a wavelength conversion material such as quantum dots (QD) is dispersed in a liquid binder resin and filled in the grooves to form wavelength conversion units 190R, 190G, 190B, and a protective layer 400 on the top When is attached, the display panel 1 of FIG. 3 can be manufactured.

A manufacturing process of a display panel according to an exemplary embodiment will be described. 17 to 21 are diagrams schematically illustrating main manufacturing processes of the display panel of FIG. 5. The previous process of FIG. 17 is the same as the process of FIG. 11 of the above-described embodiment, and thus will be omitted. 17 to 20 are diagrams schematically illustrating main manufacturing processes of the display panel of FIG. 5. In addition, there is a difference in the embodiment in that the first molding portion 1161 is formed of polyimide (PI) as compared to the above-described embodiment.

Referring to FIG. 17, a reflective layer 1200 may be formed on a side surface of the light emitting structure 1130. The reflective layer 1200 may be formed by depositing aluminum (Al) on the side surface of the light emitting structure 1130. The reflective layer 1200 is to compensate for the fact that the first molding portion 1161 is formed of PI in a subsequent process, so that the reflectance is lower than that of PCT or EMC. An insulating layer 1100 for insulation between the reflective layer 1200 and the light emitting structure 1130 may be interposed.

Referring to FIG. 18, a first molding part 1161 may be formed in the light emitting structure 1130. The first molding part 1161 may include a material including at least one of polycyclohexylenedimethylene terephthalate (PCT) and an epoxy molding compound (EMC). An opening H1 may be formed in the first molding part 1161 to expose the common first electrode 1170N and the second electrode 1141.

Referring to FIG. 19, a second molding part 1162 is formed on the first molding part 1161, and openings H2 and H3 are formed to expose the pad part 1170NC and the second electrode 1141. I can do it. The second molding part 1162 may be formed by coating at least one of PI and poly phenylene benzobisoxazole (PBO).

Referring to FIG. 20, a first electrode pad 1175N and a second electrode pad 1175P in contact with the common first electrode 1170N and the second electrode 1141 by plating a conductive material on the openings H2 and H3, respectively. Can be formed.

Thereafter, by performing the process of FIGS. 14 to 20 of the above-described embodiment, the display panel 2 of FIG. 5 may be manufactured.

In the above, embodiments of the present invention have been described with reference to the accompanying drawings, but those of ordinary skill in the art to which the present invention pertains can be implemented in other specific forms without changing the technical spirit or essential features. You can understand that there is. Therefore, it should be understood that the embodiments described above are illustrative in all respects and are not limiting.

100: first substrate structure
200: bonding layer
300: second substrate structure
400: protective layer

Claims (10)

Each has a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, is disposed to be spaced apart from each other, and is located in a direction opposite to the first surface and the first surface provided by the first conductivity-type semiconductor layer. A plurality of light emitting structures having a second surface provided by a second conductivity type semiconductor layer;
Each of the first conductivity-type semiconductor layers of the plurality of light emitting structures are connected to each other, extending parallel to the first and second surfaces at different levels, and including at least one of tungsten (W) and tungsten silicide (WS). A common first electrode made of a material;
A plurality of second electrodes disposed on the second surfaces of the plurality of light emitting structures and connected to respective second conductivity type semiconductor layers of the plurality of light emitting structures;
A plurality of wavelength converters disposed on the first surface to correspond to each of the plurality of light emitting structures; And
A molding part made of a material having a lower modulus than the plurality of light-emitting structures, covering the side surfaces of the plurality of light-emitting structures and the plurality of wavelength conversion parts and separating the plurality of wavelength conversion parts from each other; A light emitting device package comprising a.
The method of claim 1,
The common first electrode is a light emitting device package arranged on a surface disposed in parallel between the first and second surfaces.
The method of claim 2,
The common first electrode,
A plurality of individual electrode units disposed in a region overlapping the plurality of light emitting structures and connected to each of the first conductivity type semiconductor layers;
At least one pad portion disposed in an area not overlapping the plurality of light emitting structures; And
And a connection unit connecting the plurality of individual electrode units, respectively, and connecting at least one of the plurality of individual electrode units to the pad unit.
The method of claim 3,
A first electrode pad connected to the pad portion through the molding portion; And
The light emitting device package further comprises a second electrode pad penetrating the molding part and connected to the plurality of second electrodes, respectively.
The method of claim 1,
Each of the plurality of individual electrode units is disposed to surround a circumference of a region of the plurality of light emitting structures.
The method of claim 1,
When viewed from the direction of the first surface, the plurality of light emitting structures are disposed in a region overlapping the plurality of wavelength conversion units.
The method of claim 6,
When viewed in the direction of the first surface, each area of the plurality of light emitting structures is smaller than the area of each of the plurality of wavelength conversion units.
The method of claim 1,
The plurality of light emitting structures have a stepped side,
A light emitting device package in which an area in contact with the first surface is larger than an area in contact with the second surface.
The method of claim 1,
A first molding part covering side surfaces of the plurality of light emitting structures;
A second molding unit for isolating the plurality of wavelength conversion units from each other; And
A light emitting device package comprising a; a third molding part covering the first molding part.
A first substrate structure including a plurality of light emitting device packages arranged in rows and columns, each of the plurality of light emitting device packages providing at least one pixel; And
And a second substrate structure including a plurality of TFT cells respectively corresponding to the plurality of light emitting device packages and attached to a lower portion of the first substrate structure, and
The plurality of light emitting device packages,
Each has a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, is disposed to be spaced apart from each other, and is located in a direction opposite to the first surface and the first surface provided by the first conductivity-type semiconductor layer. A plurality of light emitting structures each having a second surface provided by a second conductivity type semiconductor layer and constituting a plurality of sub-pixels forming the pixel;
A common first electrode connecting each of the first conductivity-type semiconductor layers of the plurality of light emitting structures to each other and extending parallel to the first and second surfaces at different levels;
A plurality of second electrodes disposed on the second surfaces of the plurality of light emitting structures and connected to respective second conductivity type semiconductor layers of the plurality of light emitting structures;
A plurality of wavelength converters disposed on the first surface to correspond to each of the plurality of light emitting structures;
A molding part covering side surfaces of the plurality of light emitting structures and the plurality of wavelength conversion parts; And
And a first electrode pad and a second electrode pad penetrating the molding part to connect the common first electrode and the plurality of second electrodes to a connection part of the second substrate structure, respectively.

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