TWI662562B - Resistance material, resistor and method of manufacturing the same - Google Patents

Resistance material, resistor and method of manufacturing the same Download PDF

Info

Publication number
TWI662562B
TWI662562B TW107109140A TW107109140A TWI662562B TW I662562 B TWI662562 B TW I662562B TW 107109140 A TW107109140 A TW 107109140A TW 107109140 A TW107109140 A TW 107109140A TW I662562 B TWI662562 B TW I662562B
Authority
TW
Taiwan
Prior art keywords
core layer
substrate
resistor
manufacturing
item
Prior art date
Application number
TW107109140A
Other languages
Chinese (zh)
Other versions
TW201939520A (en
Inventor
黃宗熙
蔡承琪
Original Assignee
新力應用材料有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 新力應用材料有限公司 filed Critical 新力應用材料有限公司
Priority to TW107109140A priority Critical patent/TWI662562B/en
Application granted granted Critical
Publication of TWI662562B publication Critical patent/TWI662562B/en
Publication of TW201939520A publication Critical patent/TW201939520A/en

Links

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

本發明揭露一種電阻材料、電阻器與其製作方法。電阻材料包括多個阻抗粒子,每一個阻抗粒子包含一核心層及包覆核心層的一包覆層,核心層的材料包含金屬或其合金,包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。本發明可符合電機電子產品中有害物質禁限用指令(RoHS)所規定的有害物質要求,其電阻溫度係數(TCR)也較低。 The invention discloses a resistance material, a resistor and a manufacturing method thereof. The resistance material includes a plurality of resistance particles, each of which includes a core layer and a cladding layer covering the core layer. The material of the core layer includes a metal or an alloy thereof, and the material of the cladding layer includes graphene, graphite, and nanometer. Carbon tubes, nano carbon balls, or a combination thereof. The invention can meet the requirements of hazardous substances stipulated in the RoHS (Hazardous Substances Restriction Directive) in electrical and electronic products, and its resistance temperature coefficient (TCR) is also low.

Description

電阻材料、電阻器與其製作方法 Resistive material, resistor and manufacturing method thereof

本發明關於一種電阻材料、電阻器與其製作方法。 The invention relates to a resistance material, a resistor and a manufacturing method thereof.

按,歐盟議會和歐盟部長級理事會一致同意自2006年7月起禁止在電子電器設備中使用鉛、鎘、汞、鉻等四種重金屬。因此,銷往歐盟的電子電器產品需要符合電機電子產品中有害物質禁限用指令(RoHS)所規定的有害物質要求。 According to the agreement, the European Parliament and the EU Ministerial Council have agreed to ban the use of lead, cadmium, mercury, chromium and other four heavy metals in electrical and electronic equipment since July 2006. Therefore, electronic and electrical products sold to the European Union need to comply with the hazardous substance requirements specified in the RoHS directive for hazardous substances in electrical and electronic products.

另外,材料的電阻值會跟著溫度變化而變動,其變動的比率稱為電阻溫度係數(Temperature Coefficient of Resistance,TCR)。所有電阻器都有一個共同的特性,在施加電壓於電阻器一段時間後,其溫度就會上升,使得其阻抗值會隨溫度升高而變化(稱為溫飄)。其中,TCR越低,表示溫飄較小,電阻器的特性也越好。 In addition, the resistance value of a material changes with temperature. The ratio of the change is called the Temperature Coefficient of Resistance (TCR). All resistors have a common characteristic. After a voltage is applied to the resistor for a period of time, its temperature will rise, so that its resistance value will change with increasing temperature (called temperature drift). Among them, the lower the TCR, the smaller the temperature drift, and the better the characteristics of the resistor.

本發明的目的為提供一種電阻材料、電阻器與其製作方法。本發明的電阻器除了可符合電機電子產品中有害物質禁限用指令(RoHS)所規定的有害物質要求(無鉛、鎘、汞、鉻等四種重金屬)外,其電阻溫度係數(TCR)也較低。 The object of the present invention is to provide a resistance material, a resistor and a manufacturing method thereof. The resistor of the present invention can meet the hazardous substance requirements (four heavy metals such as lead, cadmium, mercury, chromium, etc.) as stipulated in the RoHS directive for motor and electronic products, and its resistance temperature coefficient (TCR) also Lower.

本發明提出一種電阻材料,包括多個阻抗粒子,每一個阻抗粒子包含一核心層及包覆核心層的一包覆層,核心層的材料包含金屬或其合金,包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。 The invention provides a resistive material, which includes a plurality of resistive particles. Each resistive particle includes a core layer and a coating layer covering the core layer. The material of the core layer includes a metal or an alloy thereof, and the material of the coating layer includes graphene. , Graphite, nano carbon tubes, nano carbon spheres, or a combination thereof.

本發明更提出一種電阻器,包括一基材以及一阻抗元件。阻抗元件設置於基材,阻抗元件包含多個阻抗粒子,每一個阻抗粒子包含一核心層及包覆核心層的一包覆層,核心層的材料包含金屬或其合金,包覆 層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。 The invention further provides a resistor, which includes a substrate and a resistance element. The impedance element is disposed on the substrate. The impedance element includes a plurality of impedance particles, and each impedance particle includes a core layer and a coating layer covering the core layer. The material of the core layer includes a metal or an alloy thereof, covering The material of the layer includes graphene, graphite, nano carbon tubes, nano carbon spheres, or a combination thereof.

在一實施例中,金屬為銀、銅、錳、鎳、金、鋁、鐵或錫。 In one embodiment, the metal is silver, copper, manganese, nickel, gold, aluminum, iron, or tin.

在一實施例中,電阻器更包括兩導電端子,兩導電端子設置於基材上,並分別連接阻抗元件的兩側。 In one embodiment, the resistor further includes two conductive terminals. The two conductive terminals are disposed on the substrate and connected to two sides of the impedance element, respectively.

在一實施例中,基材具有一第一表面、兩第二表面與一第三表面,阻抗元件設置於第一表面,兩第二表面分別連接第一表面與第三表面,且兩導電端子分別設置於第一表面上,並經由兩第二表面且延伸至第三表面。 In one embodiment, the substrate has a first surface, two second surfaces, and a third surface, the impedance element is disposed on the first surface, the two second surfaces are respectively connected to the first surface and the third surface, and two conductive terminals They are respectively disposed on the first surface, and extend to the third surface through the two second surfaces.

在一實施例中,電阻器更包括一保護層,其覆蓋在阻抗元件上。 In one embodiment, the resistor further includes a protective layer covering the resistive element.

本發明更提出一種電阻器的製作方法,包括:將多個阻抗粒子與一溶劑混合,以形成一混合材料,其中阻抗粒子包含一核心層及包覆核心層的一包覆層,核心層的材料包含金屬或其合金,且包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合;設置混合材料於一基材;以及進行一燒結製程,以於基材上形成一阻抗元件。 The invention further provides a method for manufacturing a resistor, which comprises: mixing a plurality of resistance particles with a solvent to form a mixed material, wherein the resistance particles include a core layer and a coating layer covering the core layer. The material includes a metal or an alloy thereof, and the material of the cladding layer includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof; setting a mixed material on a substrate; and performing a sintering process on the substrate An impedance element is formed on the material.

在一實施例中,溶劑為水、二甲基甲醯胺、四氫呋喃、酮類、醇類、醋酸乙脂、或甲苯。 In one embodiment, the solvent is water, dimethylformamide, tetrahydrofuran, ketones, alcohols, ethyl acetate, or toluene.

在一實施例中,設置混合材料於基材的步驟中,是利用塗佈、沾粘、印刷或濺鍍方式設置。 In one embodiment, in the step of disposing the mixed material on the substrate, the disposing is performed by coating, sticking, printing or sputtering.

在一實施例中,燒結製程的燒結溫度介於800℃~1050℃。 In one embodiment, the sintering temperature of the sintering process is between 800 ° C and 1050 ° C.

在一實施例中,製作方法更包括:設置兩導電端子於基材上,並使兩導電端子分別連接阻抗元件的兩側。 In one embodiment, the manufacturing method further includes: setting two conductive terminals on the substrate, and connecting the two conductive terminals to two sides of the impedance element respectively.

在一實施例中,製作方法更包括:設置一保護層覆蓋在阻抗元件上。 In one embodiment, the manufacturing method further includes: providing a protective layer to cover the impedance element.

承上所述,在本發明的一種電阻材料、電阻器與其製作方法中,電阻材料或阻抗元件包括多個阻抗粒子,每一個阻抗粒子包含核心層及包覆核心層的包覆層,核心層的材料包含金屬或其合金,包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。藉此,可使本發明的電阻器除了可符合電機電子產品中有害物質禁限用指令(RoHS)所規定 的有害物質要求(無鉛、鎘、汞、鉻等四種重金屬)外,其電阻溫度係數(TCR)也較低。 As mentioned above, in a resistance material, a resistor and a method for manufacturing the same according to the present invention, the resistance material or the resistance element includes a plurality of resistance particles, and each resistance particle includes a core layer and a coating layer covering the core layer, and the core layer The material of the material includes a metal or an alloy thereof, and the material of the coating layer includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof. In this way, the resistor of the present invention can meet the requirements of the RoHS (Hazardous Substances Restriction Directive) in electrical and electronic products. In addition to the requirements of hazardous substances (four heavy metals such as lead-free, cadmium, mercury, and chromium), its temperature coefficient of resistance (TCR) is also low.

1‧‧‧電阻器 1‧‧‧ resistor

11‧‧‧基材 11‧‧‧ Substrate

12‧‧‧阻抗元件 12‧‧‧Impedance element

121‧‧‧阻抗粒子 121‧‧‧ impedance particles

1211‧‧‧核心層 1211‧‧‧Core layer

1212‧‧‧包覆層 1212‧‧‧ Coating

13a、13b‧‧‧導電端子 13a, 13b‧‧‧Conductive terminal

14‧‧‧保護層 14‧‧‧ protective layer

M‧‧‧混合材料 M‧‧‧ mixed materials

S‧‧‧溶劑 S‧‧‧ Solvent

S1‧‧‧第一表面 S1‧‧‧First surface

S2‧‧‧第二表面 S2‧‧‧Second surface

S3‧‧‧第三表面 S3‧‧‧ Third surface

S01~S05‧‧‧步驟 S01 ~ S05‧‧‧step

圖1為本發明較佳實施例的一種電阻器的製作方法的流程步驟圖。 FIG. 1 is a flowchart of a method for manufacturing a resistor according to a preferred embodiment of the present invention.

圖2A至圖2F分別為本發明較佳實施例的電阻器的製作過程示意圖。 2A to 2F are schematic diagrams of a manufacturing process of a resistor according to a preferred embodiment of the present invention.

圖3為本發明較佳實施例的電阻器製作方法的另一流程步驟圖。 FIG. 3 is another process step diagram of a resistor manufacturing method according to a preferred embodiment of the present invention.

以下將參照相關圖式,說明依本發明較佳實施例的電阻材料、電阻器與其製作方法,其中相同的元件將以相同的參照符號加以說明。 The following will describe the resistive material, the resistor and the manufacturing method thereof according to the preferred embodiments of the present invention with reference to the related drawings, wherein the same components will be described with the same reference symbols.

請參照圖1、圖2A至圖2F所示,其中,圖1為本發明較佳實施例的一種電阻器1的製作方法的流程步驟圖,而圖2A至圖2F分別為本發明較佳實施例的電阻器1的製作過程示意圖。 Please refer to FIG. 1, FIG. 2A to FIG. 2F, wherein FIG. 1 is a flowchart of a method for manufacturing a resistor 1 according to a preferred embodiment of the present invention, and FIGS. 2A to 2F are preferred implementations of the present invention, respectively. A schematic diagram of the manufacturing process of the resistor 1 of the example.

如圖1所示,電阻器1的製作方法可包括:將多個阻抗粒子與一溶劑混合,以形成一混合材料,其中阻抗粒子包含一核心層及包覆核心層的一包覆層,核心層的材料包含金屬或其合金,且包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合(步驟S01);設置混合材料於一基材(步驟S02);以及進行一燒結製程,以於基材上形成一阻抗元件(步驟S03)。以下,請分別配合圖2A至圖2F所示,以說明電阻器1的製作過程。 As shown in FIG. 1, the manufacturing method of the resistor 1 may include: mixing a plurality of resistance particles with a solvent to form a mixed material, wherein the resistance particles include a core layer and a coating layer covering the core layer, and the core The material of the layer includes a metal or an alloy thereof, and the material of the cladding layer includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof (step S01); setting the mixed material on a substrate (step S02) And performing a sintering process to form a resistive element on the substrate (step S03). In the following, please refer to FIGS. 2A to 2F to illustrate the manufacturing process of the resistor 1.

首先,如圖2A與圖2B所示,先進行步驟S01:將多個阻抗粒子121與一溶劑S混合,以形成一混合材料,其中阻抗粒子121包含一核心層1211及包覆核心層1211的一包覆層1212,核心層1211的材料包含金屬或其合金,且包覆層1212的材料包含石墨烯(graphene)、石墨(graphite)、奈米碳管(carbon nanotube,CNT)、奈米碳球(carbon nanoball)、或其組合。於此,可將包含多個阻抗粒子121的電阻材料混合於溶劑S中並攪拌均勻,以得到膏狀的混合材料。其中,阻抗粒子121的核心層1211為不含鉛、鎘、汞、鉻等四種重金屬之金屬,例如銀、銅、錳、鎳、金、鋁、 鐵或錫等金屬,或上述金屬的任意組合的合金,並不限定。另外,若阻抗粒子121的包覆層1212的材料是石墨時,其可為天然石墨或人工石墨,並不限制。在本實施例的阻抗粒子121中,包覆層1212包覆核心層1211的目的是為了可快速導熱,避免使用時溫度太高而燒毀電阻器1,同時解決電阻材料溫飄的問題,使TCR較低。 First, as shown in FIG. 2A and FIG. 2B, step S01 is first performed: a plurality of impedance particles 121 are mixed with a solvent S to form a mixed material, wherein the impedance particles 121 include a core layer 1211 and a core layer 1211 A cladding layer 1212. The material of the core layer 1211 includes a metal or an alloy thereof, and the material of the cladding layer 1212 includes graphene, graphite, carbon nanotube (CNT), and carbon. Carbon nanoball, or a combination thereof. Here, the resistive material including the plurality of impedance particles 121 can be mixed in the solvent S and stirred uniformly to obtain a paste-like mixed material. The core layer 1211 of the impedance particle 121 is a metal containing no four heavy metals such as lead, cadmium, mercury, and chromium, such as silver, copper, manganese, nickel, gold, aluminum, A metal such as iron or tin, or an alloy of any combination of the above metals is not limited. In addition, if the material of the coating layer 1212 of the resistance particle 121 is graphite, it may be natural graphite or artificial graphite, which is not limited. In the impedance particle 121 of this embodiment, the purpose of covering the core layer 1211 with the cladding layer 1212 is to quickly conduct heat, avoid burning the resistor 1 when the temperature is too high during use, and at the same time solve the problem of temperature drift of the resistance material and make the TCR Lower.

另外,溶劑S可例如為水、二甲基甲醯胺(DMF)、四氫呋喃(THF)、酮類、醇類、醋酸乙脂、或甲苯。本實施例的溶劑S是以水為例。在不同的實施例中,當溶劑S為酮類時,其可為N-甲基吡咯烷酮(NMP)、或丙酮;當溶劑S為醇類時,其可為乙醇(Ethanol)、或乙二醇(Ethylene glycol)。此外,溶劑S亦可為上述溶劑(水、二甲基甲醯胺、四氫呋喃、酮類、或醇類)的任意混合,並不限定。 The solvent S may be, for example, water, dimethylformamide (DMF), tetrahydrofuran (THF), ketones, alcohols, ethyl acetate, or toluene. The solvent S in this embodiment is exemplified by water. In various embodiments, when the solvent S is a ketone, it may be N-methylpyrrolidone (NMP), or acetone; when the solvent S is an alcohol, it may be ethanol (Ethanol), or ethylene glycol. (Ethylene glycol). In addition, the solvent S may be any mixture of the solvents (water, dimethylformamide, tetrahydrofuran, ketones, or alcohols), and is not limited.

在阻抗的公式中,電阻值=電阻常數(ρ)×長度/面積,因此,影響阻抗值的因素可包括材料本身(阻抗粒子121的核心層1211與包覆層1212)、阻抗粒子121的粒徑大小、阻抗粒子121的截面積或厚度與製程溫度,設計者可藉由上述因素通過適當的調配組成成份來控制阻抗元件12(混合材料)的阻抗值。 In the impedance formula, the resistance value = resistance constant (ρ) × length / area. Therefore, the factors that affect the resistance value may include the material itself (the core layer 1211 and the cladding layer 1212 of the resistance particle 121), the particles of the resistance particle 121 The diameter, the cross-sectional area or thickness of the impedance particles 121, and the process temperature, the designer can control the impedance value of the impedance element 12 (mixed material) by appropriately adjusting the composition components through the above factors.

接著,如圖2C所示,進行步驟S02為:設置混合材料M於一基材11。其中,基材11可為硬性基材或軟性基材,硬性基材可為玻璃、金屬、陶瓷或樹脂基材、或是複合式基材。本實施例的基材11是以氧化鋁(Al2O3)的硬性基材為例。混合材料M可利用塗佈、沾粘、印刷或濺鍍(sputtering)等方式設置於基材11上。於此,塗佈可為噴射塗佈(spray coating)、或旋轉塗佈(spin coating),而印刷可為噴墨列印(inkjet printing)、或網版印刷(screen printing),並不限定。 Next, as shown in FIG. 2C, step S02 is performed: setting the mixed material M on a substrate 11. The substrate 11 may be a rigid substrate or a flexible substrate, and the rigid substrate may be a glass, metal, ceramic, or resin substrate, or a composite substrate. The substrate 11 of this embodiment is an example of a rigid substrate of alumina (Al 2 O 3 ). The mixed material M can be disposed on the substrate 11 by means of coating, sticking, printing, or sputtering. Here, the coating may be spray coating or spin coating, and the printing may be inkjet printing or screen printing, which is not limited.

接著,進行一燒結製程,以於基材11上形成一阻抗元件12(步驟S03)。其中,燒結製程的燒結溫度可介於800℃~1050℃,以去除混合材料M中的溶劑S(例如水分),並使混合材料M中留下來的電阻材料(多個阻抗粒子121)的分子重新排列,經冷卻(可為室溫冷卻)後可在基材11上形成阻抗元件12。在圖2C的實施例中,基材11具有一第一表面S1、兩第二表面S2與一第三表面S3,第一表面S1與第三表面S3為基材 11的相反表面,且兩個第二表面S2位於基材11的左右側,並分別連接第一表面S1與第三表面S3,而阻抗元件12是位於基材11的第一表面S1。在一些實施例中,阻抗元件12的成份及其重量百分比可如下:銅粉,80%~90%;錳粉,5%~15%;鎳粉,1%~10%;錫粉,1%~10%;碳,1%~10%。 Next, a sintering process is performed to form a resistive element 12 on the substrate 11 (step S03). The sintering temperature of the sintering process may be between 800 ° C. and 1050 ° C. to remove the solvent S (for example, moisture) in the mixed material M and make the molecules of the resistance material (the plurality of impedance particles 121) left in the mixed material M. After rearrangement, the impedance element 12 can be formed on the substrate 11 after being cooled (which may be room temperature cooling). In the embodiment of FIG. 2C, the substrate 11 has a first surface S1, two second surfaces S2, and a third surface S3, and the first surface S1 and the third surface S3 are substrates. 11 are opposite surfaces, and the two second surfaces S2 are located on the left and right sides of the substrate 11, and are respectively connected to the first surface S1 and the third surface S3. In some embodiments, the composition and weight percentage of the impedance element 12 may be as follows: copper powder, 80% to 90%; manganese powder, 5% to 15%; nickel powder, 1% to 10%; tin powder, 1% ~ 10%; carbon, 1% ~ 10%.

另外,請參照圖3所示,其為本發明較佳實施例的電阻器1製作方法的另一流程步驟圖。與圖1不同的是,除了步驟S01至步驟S03之外,圖3的製作方法更可包括步驟S04與步驟S05。其中,步驟S04為:設置兩導電端子13a、13b於基材11上,並使兩導電端子13a、13b分別連接阻抗元件12的兩側。於此,導電端子13a、13b為導電性良好的金屬,例如為鋁、銅、銀、鉬、或鈦,或其合金所構成的單層或多層結構,並不限制。如圖2D所示,導電端子13a、13b分別設置於基材11的第一表面S1上,並分別連接阻抗元件12的兩側,且經由兩個第二表面S2而延伸至第三表面S3,使得本實施例的電阻器1為一表面貼裝元件(surface-mount device,SMD)。在不同的實施例,電阻器1也可為不同型式的電阻,本發明並不限制其實際呈現的態樣。 In addition, please refer to FIG. 3, which is another flowchart of a method for manufacturing the resistor 1 according to a preferred embodiment of the present invention. Different from FIG. 1, in addition to steps S01 to S03, the manufacturing method of FIG. 3 may further include steps S04 and S05. In step S04, two conductive terminals 13a and 13b are disposed on the substrate 11, and the two conductive terminals 13a and 13b are connected to two sides of the impedance element 12, respectively. Here, the conductive terminals 13a, 13b are metals having good conductivity, such as a single-layer or multilayer structure composed of aluminum, copper, silver, molybdenum, or titanium, or an alloy thereof, and are not limited. As shown in FIG. 2D, the conductive terminals 13a and 13b are respectively disposed on the first surface S1 of the substrate 11, and are respectively connected to both sides of the impedance element 12, and extend to the third surface S3 via the two second surfaces S2. The resistor 1 in this embodiment is a surface-mount device (SMD). In different embodiments, the resistor 1 may also be different types of resistors, and the present invention does not limit the actual appearance of the resistors.

最後,進行步驟S05:設置一保護層14覆蓋在阻抗元件12上。如圖2E與圖2F所示,保護層14是設置並覆蓋在阻抗元件12上,以保護阻抗元件12不被異物破壞其特性。在一些實施例中,保護層14的材料例如但不限於為環氧樹脂(Epoxy)或壓克力。在此一提的是,上述的步驟S04之導電端子13a、13b與步驟S05之保護層14的設置順序不限,可先設置導電端子13a、13b後再設置保護層14,或者相反。 Finally, step S05 is performed: a protective layer 14 is provided to cover the impedance element 12. As shown in FIG. 2E and FIG. 2F, the protective layer 14 is disposed and covered on the impedance element 12 to protect the impedance element 12 from being damaged by foreign objects. In some embodiments, the material of the protective layer 14 is, for example, but not limited to, epoxy or acrylic. It is mentioned here that the order of setting the conductive terminals 13a, 13b of step S04 and the protective layer 14 of step S05 is not limited. The conductive terminals 13a, 13b may be provided first, and then the protective layer 14 may be provided, or vice versa.

因此,本實施例的電阻器1為表面貼裝元件(SMD),其包括基材11、阻抗元件12、兩導電端子13a、13b及保護層14。阻抗元件12設置於基材11上,其中,阻抗元件12包含多個阻抗粒子121,每一個阻抗粒子121包含核心層1211及包覆核心層1211的包覆層1212,核心層1211的材料包含金屬或其合金,而包覆層1212的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。另外,兩導電端子13a、13b設置於基材11上,並分別連接阻抗元件12的兩側。此外,保護層14覆蓋在阻抗元件12 上,以保護阻抗元件12免於被異物破壞其特性。 Therefore, the resistor 1 of this embodiment is a surface mount device (SMD), which includes a substrate 11, an impedance element 12, two conductive terminals 13 a, 13 b and a protective layer 14. The impedance element 12 is disposed on the substrate 11. The impedance element 12 includes a plurality of impedance particles 121, and each impedance particle 121 includes a core layer 1211 and a cladding layer 1212 covering the core layer 1211. The material of the core layer 1211 includes a metal. Or an alloy thereof, and the material of the cladding layer 1212 includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof. In addition, two conductive terminals 13 a and 13 b are disposed on the substrate 11 and are connected to two sides of the impedance element 12 respectively. In addition, a protective layer 14 covers the impedance element 12 In order to protect the impedance element 12 from foreign matter from damaging its characteristics.

通過上述的電阻材料,使得本實施例所製得的電阻器1可符合電機電子產品中有害物質禁限用指令(RoHS)所規定的有害物質要求(無鉛、鎘、汞、鉻等四種重金屬)。另外,現有的一種SMD電阻器的電阻溫度係數(TCR,單位為ppm/℃)的變化率為±400ppm/℃,但是,在本發明一實施例的電阻器1中,其TCR的變化率只有±200ppm/℃,因此,本實施例的電阻器1的溫飄也較低。 Through the above-mentioned resistive material, the resistor 1 made in this embodiment can meet the requirements of hazardous substances (Road), lead-free, cadmium, mercury, chromium and other heavy metals specified in the RoHS ). In addition, the change rate of the resistance temperature coefficient (TCR, unit of ppm / ° C) of the existing SMD resistor is ± 400ppm / ° C. However, in the resistor 1 of an embodiment of the present invention, the change rate of TCR is only ± 200ppm / ° C. Therefore, the temperature drift of the resistor 1 in this embodiment is also low.

綜上所述,在本發明的一種電阻材料、電阻器與其製作方法中,電阻材料或阻抗元件包括多個阻抗粒子,每一個阻抗粒子包含核心層及包覆核心層的包覆層,其中,核心層的材料包含金屬或其合金,包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合。藉此,可使本發明的電阻器除了可符合電機電子產品中有害物質禁限用指令(RoHS)所規定的有害物質要求(無鉛、鎘、汞、鉻等四種重金屬)外,其電阻溫度係數(TCR)也較低。 In summary, in a resistance material, a resistor, and a manufacturing method thereof of the present invention, the resistance material or resistance element includes a plurality of resistance particles, and each resistance particle includes a core layer and a coating layer covering the core layer, wherein, The material of the core layer includes a metal or an alloy thereof, and the material of the cladding layer includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof. In this way, in addition to meeting the requirements of hazardous substances (free of four heavy metals such as lead, cadmium, mercury, and chromium) as stipulated in the RoHS directive for hazardous substances in electrical and electronic products, the resistor of the present invention has a resistance temperature The coefficient (TCR) is also low.

以上所述僅為舉例性,而非為限制性者。任何未脫離本發明的精神與範疇,而對其進行的等效修改或變更,均應包含於後附的申請專利範圍中。 The above description is exemplary only, and not restrictive. Any equivalent modification or change made without departing from the spirit and scope of the present invention shall be included in the scope of the attached patent application.

Claims (12)

一種電阻材料,包括:多個阻抗粒子,每一個該阻抗粒子包含一核心層及包覆該核心層的一包覆層,該核心層的材料包含金屬或其合金,該包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合;其中該核心層的材料不包含鉛、鎘、汞、鉻之金屬。A resistive material includes a plurality of resistive particles, each of which includes a core layer and a coating layer covering the core layer. The material of the core layer includes a metal or an alloy thereof, and the material of the coating layer includes Graphene, graphite, nano carbon tubes, nano carbon balls, or a combination thereof; wherein the material of the core layer does not include metals of lead, cadmium, mercury, and chromium. 一種電阻器,包括:一基材;以及一阻抗元件,設置於該基材,該阻抗元件包含多個阻抗粒子,每一個該阻抗粒子包含一核心層及包覆該核心層的一包覆層,該核心層的材料包含金屬或其合金,該包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合;其中該核心層的材料不包含鉛、鎘、汞、鉻之金屬。A resistor includes: a substrate; and a resistance element disposed on the substrate. The resistance element includes a plurality of resistance particles, and each of the resistance particles includes a core layer and a coating layer covering the core layer. The material of the core layer includes a metal or an alloy thereof, and the material of the cladding layer includes graphene, graphite, a carbon nanotube, a carbon nanosphere, or a combination thereof; wherein the material of the core layer does not include lead, cadmium, Metals of mercury and chromium. 如申請專利範圍第2項所述的電阻器,其中該金屬為銀、銅、錳、鎳、金、鋁、鐵或錫。The resistor according to item 2 of the patent application scope, wherein the metal is silver, copper, manganese, nickel, gold, aluminum, iron, or tin. 如申請專利範圍第2項所述的電阻器,更包括:兩導電端子,設置於該基材上,並分別連接該阻抗元件的兩側。The resistor according to item 2 of the scope of patent application, further includes: two conductive terminals, which are arranged on the substrate and connected to two sides of the impedance element respectively. 如申請專利範圍第4項所述的電阻器,其中該基材具有一第一表面、兩第二表面與一第三表面,該阻抗元件設置於該第一表面,該兩第二表面分別連接該第一表面與該第三表面,且該兩導電端子分別設置於該第一表面上,並經由該兩第二表面且延伸至該第三表面。The resistor according to item 4 of the scope of patent application, wherein the substrate has a first surface, two second surfaces, and a third surface, the impedance element is disposed on the first surface, and the two second surfaces are respectively connected The first surface and the third surface, and the two conductive terminals are respectively disposed on the first surface, and extend to the third surface through the two second surfaces. 如申請專利範圍第2項所述的電阻器,更包括:一保護層,覆蓋在該阻抗元件上。The resistor according to item 2 of the patent application scope further comprises: a protective layer covering the impedance element. 一種電阻器的製作方法,包括:將多個阻抗粒子與一溶劑混合,以形成一混合材料,其中該阻抗粒子包含一核心層及包覆該核心層的一包覆層,該核心層的材料包含金屬或其合金,且該包覆層的材料包含石墨烯、石墨、奈米碳管、奈米碳球、或其組合;該核心層的材料不包含鉛、鎘、汞、鉻之金屬;設置該混合材料於一基材;以及進行一燒結製程,以於該基材上形成一阻抗元件。A method for manufacturing a resistor includes: mixing a plurality of resistance particles with a solvent to form a mixed material, wherein the resistance particles include a core layer and a coating layer covering the core layer, and the material of the core layer It contains metal or its alloy, and the material of the coating layer includes graphene, graphite, nano carbon tube, nano carbon ball, or a combination thereof; the material of the core layer does not include metal of lead, cadmium, mercury, and chromium; Placing the mixed material on a substrate; and performing a sintering process to form an impedance element on the substrate. 如申請專利範圍第7項所述的製作方法,其中該溶劑為水、二甲基甲醯胺、四氫呋喃、酮類、醇類、醋酸乙脂、或甲苯。The manufacturing method according to item 7 of the scope of the patent application, wherein the solvent is water, dimethylformamide, tetrahydrofuran, ketones, alcohols, ethyl acetate, or toluene. 如申請專利範圍第7項所述的製作方法,其中設置該混合材料於一基材的步驟中,是利用塗佈、沾粘、印刷或濺鍍方式設置。The manufacturing method according to item 7 of the scope of patent application, wherein in the step of setting the mixed material on a substrate, it is set by coating, sticking, printing or sputtering. 如申請專利範圍第7項所述的製作方法,其中該燒結製程的燒結溫度介於800℃~1050℃。The manufacturing method according to item 7 of the scope of patent application, wherein the sintering temperature of the sintering process is between 800 ° C and 1050 ° C. 如申請專利範圍第7項所述的製作方法,更包括:設置兩導電端子於該基材上,並使該兩導電端子分別連接該阻抗元件的兩側。The manufacturing method according to item 7 of the scope of patent application, further comprising: setting two conductive terminals on the substrate, and connecting the two conductive terminals to two sides of the impedance element respectively. 如申請專利範圍第7項所述的製作方法,更包括:設置一保護層覆蓋在該阻抗元件上。The manufacturing method according to item 7 of the scope of patent application, further comprising: setting a protective layer to cover the impedance element.
TW107109140A 2018-03-16 2018-03-16 Resistance material, resistor and method of manufacturing the same TWI662562B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW107109140A TWI662562B (en) 2018-03-16 2018-03-16 Resistance material, resistor and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW107109140A TWI662562B (en) 2018-03-16 2018-03-16 Resistance material, resistor and method of manufacturing the same

Publications (2)

Publication Number Publication Date
TWI662562B true TWI662562B (en) 2019-06-11
TW201939520A TW201939520A (en) 2019-10-01

Family

ID=67764147

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107109140A TWI662562B (en) 2018-03-16 2018-03-16 Resistance material, resistor and method of manufacturing the same

Country Status (1)

Country Link
TW (1) TWI662562B (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1462044A (en) * 2002-05-29 2003-12-17 Tdk株式会社 PTC composite, its manufacturing method and obtained thermosensitive electronic material therefrom
TW200426857A (en) * 2002-12-17 2004-12-01 Du Pont Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
TW200908828A (en) * 2007-06-04 2009-02-16 Endicott Interconnect Tech Inc Circuitized substrate with internal resistor, method of making said circuitized substrate, and electrical assembly utilizing said circuitized substrate
TWM562484U (en) * 2018-03-16 2018-06-21 新力應用材料有限公司 Resistance material and resistor
TWM562485U (en) * 2018-03-16 2018-06-21 新力應用材料有限公司 Resistance material, conductive terminal material and resistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1462044A (en) * 2002-05-29 2003-12-17 Tdk株式会社 PTC composite, its manufacturing method and obtained thermosensitive electronic material therefrom
TW200426857A (en) * 2002-12-17 2004-12-01 Du Pont Resistor compositions having a substantially neutral temperature coefficient of resistance and methods and compositions relating thereto
TW200908828A (en) * 2007-06-04 2009-02-16 Endicott Interconnect Tech Inc Circuitized substrate with internal resistor, method of making said circuitized substrate, and electrical assembly utilizing said circuitized substrate
TWM562484U (en) * 2018-03-16 2018-06-21 新力應用材料有限公司 Resistance material and resistor
TWM562485U (en) * 2018-03-16 2018-06-21 新力應用材料有限公司 Resistance material, conductive terminal material and resistor

Also Published As

Publication number Publication date
TW201939520A (en) 2019-10-01

Similar Documents

Publication Publication Date Title
WO2014174984A1 (en) Silver-bismuth powder, conductive paste and conductive film
JPS6016041B2 (en) Paste for forming thick film conductors
JP2006152253A (en) Electroconductive paste composition
WO2007032201A1 (en) Chip-shaped electronic component
JP2016004659A (en) Conductive resin paste and ceramic electronic part
JP6756085B2 (en) Conductive paste and sintered body
JPS62104878A (en) Copper-containing conductive paint for magnetized metal substrate
JP2010114167A (en) Low-resistive chip resistor, and method for manufacturing the same
TWI666269B (en) Resistance material, conductive terminal material, resistor and method of manufacturing the same
JPH06295616A (en) Conductive paste for forming film capable of applying soldering
JP3507084B2 (en) Copper conductor composition
TWI662562B (en) Resistance material, resistor and method of manufacturing the same
JP2006269588A (en) Thick film resistor paste, thick film resistor, and manufacturing method thereof
TWM562484U (en) Resistance material and resistor
TWI666660B (en) Conductive terminal material, resistor and method of manufacturing the same
WO2019044618A1 (en) Thick film resistor paste and use of thick film resistor paste in resistor
TW202147353A (en) Thick film resistor paste, thick film resistor, and electronic component
TWM562485U (en) Resistance material, conductive terminal material and resistor
TWM562487U (en) Conductive terminal material and resistor
Qi et al. Copper conductive adhesives for printed circuit interconnects
JP2742190B2 (en) Curable conductive composition
TWI784549B (en) Resistive element paste, its use, and manufacturing method of resistive element
JP6048166B2 (en) Conductive adhesive composition and electronic device using the same
JP4381661B2 (en) Conductive paste for microcircuit formation
CN208077708U (en) resistor