TWI660441B - Cover of epitaxy device chamber - Google Patents

Abstract

The invention provides a cover plate of an epitaxial device chamber, which is placed on the upper part of the epitaxial device chamber. A part of the cover plate is made of transparent material, a visible window is formed on the cover plate, and infrared temperature measurement is adopted. The device replaces the current thermal resistance temperature measurement. The probe of the infrared temperature measurement device can move freely on the visible window, which can measure the temperature distribution in the entire wafer, reduce the equipment maintenance cost, make the maintenance simple and convenient, and do not affect the epitaxial Equipment stability.

Description

Epitaxial equipment chamber cover

The invention relates to semiconductor manufacturing equipment, in particular to a cover plate of an epitaxial equipment chamber.

At present, the temperature measurement of epitaxy equipment mainly uses thermal resistance (Thermal-couple, TC) for measurement. The thermal resistance is placed in the specified position of the epitaxy equipment cavity for temperature measurement. This measurement method measures the temperature of the epitaxy chamber. The temperature can only be measured at several locations, and the temperature distribution in all regions of the epitaxial cavity cannot be accurately measured.

In addition, since the thermal resistance is a consumable, four thermal resistances need to be replaced each time the equipment is maintained (PM). The thermal resistance is expensive and used in large quantities, and the thermal resistance leakage accident will occur during use, affecting Lei. The quality of the crystal layer contaminates the epitaxial abutment.

An object of the present invention is to provide a cover plate of an epitaxial equipment chamber. By using a movable infrared temperature measuring device instead of a currently used thermal resistance to measure temperature, the temperature distribution in the entire wafer can be measured, and maintenance costs can be reduced.

The technical solution of the present invention is a cover plate of an epitaxial device chamber, which is placed on the upper part of the epitaxial device chamber. A part of the cover plate is made of transparent material. A visible window is formed on the cover plate. The probe of the infrared temperature measuring device can move freely on the visible window, so as to measure the temperature of the wafer in the epitaxial equipment chamber.

Further, in the cover plate, the transparent material is quartz.

Further, in the cover plate, the visible window is rectangular and located at a middle position of the cover plate.

Further, in the cover plate, the visible window is horizontally disposed on the cover plate.

Further, in the cover plate, the visible window is located on the cover plate. A middle position in the vertical direction, and penetrates the cover plate along the horizontal direction of the cover plate.

Further, in the cover plate, the visible window is located at a middle position in the vertical direction of the cover plate, and is located on a left half side or a right half side of the cover plate.

Further, in the cover plate, the visible window is vertically disposed on the cover plate.

Further, in the cover plate, the visible window is located at an intermediate position in the horizontal direction of the cover plate, and penetrates the cover plate along the vertical direction of the cover plate.

Further, in the cover plate, the visible window is located at an intermediate position in the horizontal direction of the cover plate, and is located on an upper half side or a lower half side of the cover plate.

Further, in the cover plate, a width of the visible window is 1 mm to 50 mm.

Compared with the prior art, the cover plate of the epitaxial equipment chamber provided by the present invention uses a transparent part of the cover plate to form a visible window on the cover plate, thereby using an infrared temperature measuring device to replace the currently used thermal resistance. To measure the temperature, the probe of the infrared temperature measuring device moves freely on the visible window, which can measure the temperature distribution in the entire wafer, reduce the equipment maintenance cost, make the maintenance simple and convenient, and do not affect the stability of the epitaxial equipment.

10‧‧‧Epistar Equipment

20‧‧‧ Probe

30‧‧‧ wafer

100‧‧‧ cover

101‧‧‧view window

102‧‧‧light tube

200‧‧‧ chamber

300‧‧‧ lower tray

301‧‧‧light tube

FIG. 1 is a schematic structural diagram of a cover plate of an epitaxial equipment chamber according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of an epitaxial device according to an embodiment of the present invention.

3 to 5 are schematic structural diagrams of the cover plates of the epitaxy equipment chambers of the three embodiments of the present invention, respectively.

In order to make the content of the present invention more clear and easy to understand, the content of the present invention is further described below with reference to the accompanying drawings of the description. Of course, the present invention is not limited to this specific embodiment, and general substitutions well known to those skilled in the art are also covered by the protection scope of the present invention.

Secondly, the present invention is described in detail using a schematic diagram. In detailing the examples of the present invention, for the convenience of explanation, the schematic diagram is not partially enlarged according to general proportions, and should not be used as a limitation on the present invention.

The core idea of the present invention is: by setting a part of the cover plate as a transparent material so as to form a visible window on the cover plate, thereby using an infrared temperature measuring device to replace the currently used thermal resistance to measure the temperature, the probe of the infrared temperature measuring device is The visible window can move freely, which can measure the temperature distribution in the entire wafer, reduce equipment maintenance costs, make maintenance simple and convenient, and do not affect the stability of the epitaxial equipment.

FIG. 1 is a schematic structural diagram of a cover plate of an epitaxy device provided in an embodiment of the present invention. As shown in FIG. 1, the present invention proposes a cover plate 100 of an epitaxial device cavity, which is placed on the epitaxial device. In the upper part of the chamber, a part of the cover is made of transparent material, so that a visible window 101 is formed on the cover 100. The probe of the infrared temperature measuring device can move freely on the visible window 101, as shown by the arrow in the figure. Display to detect the temperature of the wafer inside the chamber.

FIG. 2 is a cross-sectional view of an epitaxial device according to an embodiment of the present invention. As shown in FIG. 2, the epitaxial device 10 includes a cover plate 100, a chamber 200, and a lower tray 300. As the plate 100, the cover plate shown in FIG. 1 is used. A plurality of light tubes 102 are disposed on a side of the cover plate 100 near the cavity 200, and a plurality of light tubes 301 are disposed on a side of the lower tray 300 near the cavity 200. A part of the transparent material is used to form the visible window 101. The probe 20 of the infrared temperature measuring device can move freely on the visible window 101 so as to measure the temperature distribution of the wafer 30 in the chamber 200.

Since the lamp tube 102 and the lamp tube 301 are used to provide heat to the cavity 200 during the epitaxial layer growth process, the transparent material should be a high-temperature resistant material. In this embodiment, the preferred transparent material is It is quartz. In other embodiments, the transparent material may be other high-temperature-resistant transparent materials known to those skilled in the art.

The visible window 101 may have various shapes, such as rectangle, square, circle, etc. Preferably, the visible window 101 is rectangular and is disposed at the middle position of the cover plate 100. The probe 20 of the infrared temperature measuring device The temperature can be measured by moving along the rectangular viewing window 101. The position of the visible window 101 on the cover 100 is not fixed. The following describes the preferred positions of the visible window 101 on the cover 100 through the following embodiments.

First, the visible window 101 is horizontally disposed on the cover 100.

Please continue to refer to FIG. 1, the visible window 101 is located on the cover The middle position in the vertical direction of 100 is located on the left half of the cover plate 100. Since the wafer 30 needs to be continuously rotated during the epitaxial silicon growth process, the entire wafer 30 will pass through Since the viewing window 101 is described, the temperature distribution of the entire wafer 30 can be measured. Similarly, the viewable window 101 may also be located on the right half of the cover 100, which is the same as the case of being located on the left half of the cover 100. It should be noted that, in this case, the visible window 101 should extend from the left end of the cover plate 100 to the middle of the cover plate 100, or from the right end of the cover plate 100 to the cover plate. The middle of 100, that is, the length of the visible window 101 is half of the length of the cover plate 100, or is greater than half of the length of the cover plate 100, thereby ensuring that the probe 20 of the infrared temperature measuring device can detect the entire area. The temperature of the wafer 30 is described.

Please refer to FIG. 3, which is a schematic structural diagram of a chamber cover plate of an epitaxial device according to an embodiment of the present invention. Based on the previous embodiment, the visible window 101 is located at a middle position in the vertical direction of the cover plate 100 and penetrates the cover plate 100 along the horizontal direction of the cover plate 100. The infrared temperature measuring device The probe 20 can move from one end to the other end of the cover plate 100 along the horizontal direction of the cover plate 100, measure the temperature of the wafer 30 in a certain horizontal direction, and then measure the entire length of the wafer 30 through the rotation of the wafer 30. Temperature distribution on the wafer 30. Compared with the previous embodiment, the area of the visible window 101 is increased, and the transparent material used is also increased. Although the cost is increased to a certain extent, the time taken to measure the temperature distribution of the entire wafer 30 is reduced. The analysis of the temperature distribution of the wafer 30 will be more accurate, which improves the efficiency of temperature measurement.

Secondly, the visible window 101 is vertically disposed on the cover 100.

Please refer to FIG. 4, which is a schematic structural diagram of a chamber cover plate of an epitaxial device according to another embodiment of the present invention. The visible window 101 is located at a middle position in the horizontal direction of the cover plate 100 and on the upper half of the cover plate 100. Since the wafer 30 needs to be continuously rotated during the epitaxial silicon growth process, The entire wafer 30 passes through the visible window 101, so the temperature distribution of the entire wafer 30 can be measured. Similarly, the viewable window 101 may also be located on the lower half of the cover 100, as in the case of being located on the upper half of the cover 100. It should be noted that, in this case, the visible window 101 should extend from the upper end of the cover plate 100 to the middle of the cover plate 100, or from the lower end of the cover plate 100 to the cover plate. The middle of 100, that is, the length of the visible window 101 is the width of the cover 100. One half, or more than half the width of the cover 100, thereby ensuring that the probe 20 of the infrared temperature measuring device can detect the temperature of the entire wafer 30.

Please refer to FIG. 5, which is a schematic structural diagram of a chamber cover of an epitaxial device according to another embodiment of the present invention. Based on the previous embodiment, the visible window 101 is located at an intermediate position in the horizontal direction of the cover plate 100 and penetrates the cover plate 100 along the vertical direction of the cover plate 100. The probe 20 of the infrared temperature measuring device can move from one end to the other end of the cover plate 100 along the vertical direction of the cover plate 100 to measure the temperature in a certain vertical direction of the wafer 30, and then measure the rotation of the wafer 30 to measure Temperature distribution across the wafer 30. Compared with the previous embodiment, the area of the visible window 101 is increased, and the transparent material used is also increased. Although the cost is increased to a certain extent, the time taken to measure the temperature distribution of the entire wafer 30 is reduced. The analysis of the temperature distribution of the wafer 30 will be more accurate, which improves the efficiency of temperature measurement.

In the above embodiment, the visible window 101 is disposed laterally or vertically on the cover 100. In other embodiments, the visible window 101 may be disposed diagonally on the cover 100, or In addition to the rectangle, the visible window 101 may have other shapes, and may be disposed at different positions of the cover plate 100 or along different directions. In the present invention, the shape of the visible window 101 and the position of the visible window 101 on the cover plate 100 are not limited, so that the probe 20 can detect differences on the wafer 30 as much as possible. The temperature of the location is a principle.

It can be understood that the length and width of the cover plate 100 are relative. In FIGS. 1 and 3, the length represents the size of the cover plate 100 in the direction of the visible window 101. In FIG. 5, the width represents the size of the cover plate 100 in the direction of the visible window 101. If in FIG. 1 and FIG. 3, the size of the cover plate 100 in the direction of the visible window 101 is the width Then, in FIGS. 4 and 5, the size of the cover 100 in the direction of the visible window 101 is a length. In FIGS. 1, 3 to 5, the direction of the cover 100 is not changed. In addition, the horizontal direction and the vertical direction of the cover plate 100 are also opposite, and the vertical direction and the vertical direction refer to the horizontal direction and the vertical direction in FIGS. 1 to 5.

The width of the visible window 101 is 1mm-50mm, for example: 1mm, 10mm, 20mm, 30mm, 40mm, or 50mm. The width of the visible window needs to ensure the infrared The probe 20 of the temperature measuring device can detect the temperature of the wafer 30 at a certain position. The length of the visible window 101 is, as described in the above embodiment, greater than half of the size of the cover 100 in the direction in which it is located.

To sum up, the cover plate of the epitaxial equipment chamber provided by the present invention is configured by forming a part of the cover plate with a transparent material so as to form a visible window on the cover plate. The probe of the infrared temperature measuring device can The upper surface is free to move so that the temperature distribution in the entire wafer can be measured, reducing maintenance costs, making maintenance simple and convenient, and not affecting the stability of the epitaxial equipment.

The above description is only a description of the preferred embodiment of the present invention, and does not limit the scope of protection of the present invention in any way. Any change or modification made by a person having ordinary knowledge in the field according to the above disclosure shall fall within the protection scope of the present invention.

Claims (10)

A cover plate of an epitaxial device chamber is placed on the upper part of the epitaxial device chamber. A part of the cover plate is made of transparent material so that a visible window is formed on the part of the cover plate. The probe of the infrared temperature measuring device can move freely on the visible window to measure the temperature of the wafer in the epitaxial equipment chamber. The cover plate according to claim 1, wherein the transparent material is quartz. The cover plate according to claim 1, wherein the visible window is rectangular and located at a middle position of the cover plate. The cover plate according to claim 3, wherein the visible window is horizontally provided on the cover plate. The cover plate according to claim 4, wherein the visible window is located at an intermediate position in the vertical direction of the cover plate, and penetrates the cover plate along the horizontal direction of the cover plate. The cover plate according to claim 4, wherein the visible window is located at a middle position in the vertical direction of the cover plate, and is located at a left half side or a right half side of the cover plate. The cover plate according to claim 3, wherein the visible window is vertically disposed on the cover plate. The cover plate according to claim 7, wherein the visible window is located at an intermediate position in the horizontal direction of the cover plate, and penetrates the cover plate along the vertical direction of the cover plate. The cover plate according to claim 7, wherein the visible window is located at an intermediate position in the horizontal direction of the cover plate, and is located on an upper half side or a lower half side of the cover plate. The cover plate according to any one of claims 1 to 9, wherein a width of the visible window is 1 mm to 50 mm.