TWI655036B - Cleaning liquid cartridge and cleaning method using the same - Google Patents

Abstract

The cleaning liquid of the present invention efficiently supplies a cleaning liquid for cleaning the processing liquid system of the substrate processing apparatus to the processing liquid system.

The cleaning liquid cartridge of the present invention includes: a crucible body having a storage space for storing the cleaning liquid and an opening portion communicating with the storage space; and a gas introduction portion having a gas supply path communicating with the storage space via the gas supply path Introducing a gas supplied from the outside of the crucible body into a storage space in which the cleaning liquid is stored to form a high-pressure gas region higher than atmospheric pressure in the storage space; and discharging the cleaning liquid through the opening portion to the treatment by the high-pressure gas region Liquid system.

Description

 Cleaning solution and cleaning method using the same  

The present invention relates to a cleaning liquid for supplying a cleaning liquid for a substrate processing apparatus for processing a substrate by a processing liquid transported through a processing liquid system to a processing liquid system, and using the cleaning liquid The cleaning method of the above substrate processing apparatus is washed.

The disclosure of the specification, the drawings, and the claims of the Japanese Patent Application, the disclosure of which is hereby incorporated by reference in its entirety herein in

A substrate processing apparatus using a processing liquid such as a chemical liquid or pure water for performing various processes on a substrate such as a semiconductor wafer is known. In the substrate processing apparatus, a processing liquid is supplied to a substrate via a processing liquid system including a pipe, a valve, and a nozzle, and the substrate is subjected to a predetermined process by the processing liquid. When such a substrate processing apparatus is installed in a factory or the like, it is necessary to remove contaminants such as particles (dust) existing inside the processing liquid system before the substrate processing apparatus is operated. Further, it is necessary to remove the adhering matter attached to the pipe or the like due to the use of the substrate processing apparatus at an appropriate time. Therefore, it is necessary to clean the processing liquid system of the substrate processing apparatus.

Therefore, for example, Japanese Patent No. 4630881 proposes the use of a liquid medicine (corresponding to the "washing liquid" of the present invention) in which a washing effect is stored (corresponding to "washing liquid" of the present invention. ") Washing technology. This prior art technique is to inject a chemical solution from a chemical solution into a treatment liquid system by mounting the chemical solution in a treatment liquid system, and to wash the treatment liquid system by the chemical solution.

The invention described in the above-mentioned Japanese Patent No. 4,630,881 employs the following configuration for the injection of the above-mentioned chemical liquid. That is, the chemical supply unit is provided in the piping constituting the processing liquid system. The chemical solution supply unit is configured to detachably charge and discharge the drug solution. On the other hand, the drug solution has an inner container for storing the drug solution, and an insertion portion for inserting the drug solution supply portion freely. Then, the drug solution is injected into the drug solution supply unit from the inner container by inserting the insertion portion of the drug solution into the drug solution supply unit. However, in the case of using the chemical solution constituted as described above, it is difficult to efficiently inject the chemical solution.

The present invention has been made in view of the above problems, and an object of the invention is to provide a cleaning liquid which can efficiently supply a cleaning liquid for a processing liquid system of a substrate processing apparatus to a processing liquid system, and to use the cleaning liquid. Washing method.

One aspect of the present invention is a cleaning liquid solution for storing a cleaning liquid for a substrate processing apparatus for processing a substrate by a processing liquid transferred through a processing liquid system, and by being disposed in a process a liquid system for supplying a cleaning liquid to a processing liquid system, comprising: a crucible body having a storage space for storing the cleaning liquid and an opening portion communicating with the storage space; and a gas introduction portion having a communication space The gas supply path is introduced into the storage space in which the cleaning liquid is stored through the gas supply path, and the gas supplied from the outside of the crucible body is formed to form a high-pressure gas region higher than atmospheric pressure in the storage space; and the high-pressure gas region is washed by the high-pressure gas region. The cleaned liquid is extruded through the opening to the treatment liquid system.

Further, another aspect of the present invention provides a substrate cleaning apparatus for processing a substrate by treating a processing liquid transferred through a processing liquid system, comprising the steps of: storing a step The cleaning liquid is stored in the storage space of the cleaning liquid and the opening is sealed; and the supplying step is to connect the processing liquid system to the storage space through the opening by installing the cleaning liquid in the processing liquid system. In the pre-installation and/or installation, the high-pressure gas region formed by introducing the gas into the storage space in which the cleaning liquid is stored is supplied through the air supply path, and the cleaning liquid is extruded through the opening to be supplied to the treatment liquid. system.

In the invention configured as described above, a storage space is provided in the body of the cleaning liquid, and the cleaning liquid is stored in the storage space. Moreover, the gas supply path is provided so as to communicate with the storage space in which the cleaning liquid is stored as described above, and the gas supplied from the outside of the crucible body is introduced into the storage space via the air supply path. Thereby, in the storage space, a high-pressure gas region higher than atmospheric pressure is formed in addition to the cleaning liquid. The high-pressure gas region is extruded through the opening to the treatment liquid system by pressing the cleaning liquid. As a result, the cleaning liquid can be efficiently supplied to the processing liquid system, and the substrate processing apparatus can be satisfactorily cleaned.

The above-described various aspects of the present invention are not necessarily required, and some or all of the above-described problems may be solved, or some or all of the effects described in the present specification may be appropriately obtained. The constituent elements of one of the constituent elements are changed, deleted, replaced with other new constituent elements, and one part of the limited content is deleted. Further, in order to solve part or all of the above problems, or to achieve part or all of the effects described in the present specification, part or all of the technical features included in the above aspect of the present invention may be included in the present invention. One or all of the technical features of another aspect described above are set as an independent form of the present invention.

1‧‧‧Frame

2‧‧‧Transport room

3‧‧‧Substrate Processing Department

4‧‧‧ Division

5A~5L‧‧‧Processing Room

6‧‧‧Drug tank

6A‧‧‧DIW Supply Department

6B‧‧‧CO2 Water Supply Department

6C~6F‧‧‧Drug supply department

7‧‧‧Substrate transfer robot

8‧‧‧ Indexing robot

9‧‧‧Clean liquid

10‧‧‧Control Department

51‧‧‧First Processing Department

52‧‧‧2nd Processing Department

53‧‧‧3rd Processing Department

54‧‧‧4th Processing Department

55, 57‧‧‧ nozzle

56‧‧‧Rotary chuck

91‧‧‧匣Ontology

92‧‧‧Gas introduction department

93‧‧‧ orifice plate

94a‧‧‧ (quick connector) recess (first switching part)

94b‧‧‧ (quick connector) recess (2nd switching part)

95a, 95b‧‧‧ (quick connector) convex

96‧‧‧Supply piping

97‧‧‧High pressure piping

98‧‧‧High pressure gas zone

99, 602, 615, 621‧‧ ‧ filters

100‧‧‧Substrate processing unit

601‧‧‧Carbon Dioxide Dissolving Department

611‧‧‧1st slot

612‧‧‧2nd slot

613‧‧‧ Mixture production tank

614, 620‧ ‧ pump

616, 617‧‧ ‧ liquid tank

618‧‧‧Specific resistance meter

619‧‧‧ Mixed solution storage tank

911‧‧‧ Main Body

912‧‧‧ storage space

913‧‧‧French table

914‧‧‧ neck

915‧‧‧ openings

921, P1~P4, P6~P37‧‧‧ piping

931‧‧‧孔口

P5‧‧‧ branch tube

P5a‧‧‧Installation Department

V1, V3, V5, V6, V8, V9~V11, V13, V14, V15, V16, V17, V18, V19, V20, V21, V22, V23~V26, V27~V29‧‧‧ Valve

V2, V4, V7, V30‧‧‧ flow control valve

W‧‧‧Substrate

Fig. 1 is a perspective view showing an example of a substrate processing apparatus to which an embodiment of the cleaning method of the present invention is applied.

2 is a plan view of the substrate processing apparatus shown in FIG. 1.

Fig. 3 is a conceptual diagram showing a treatment liquid system for generating and supplying a treatment liquid.

Fig. 4 is a view showing a part of the treatment liquid system shown in Fig. 3.

5A and 5B are views showing an embodiment of the cleaning liquid of the present invention.

Fig. 6A is a view schematically showing a washing method using a cleaning liquid.

Fig. 6B is a view schematically showing an example of a range in which the washing liquid mixture is supplied.

Fig. 6C is a view schematically showing another example of the range in which the washing liquid mixture is supplied.

Fig. 7 is a view showing the supply of nitrogen gas to the cleaning liquid in another embodiment of the cleaning method of the present invention.

1 is a perspective view showing an example of a substrate processing apparatus to which an embodiment of the cleaning method of the present invention is applied, and FIG. 2 is a plan view of the substrate processing apparatus shown in FIG. 1. The substrate processing apparatus 100 is a so-called one-chip apparatus, and processes a substrate W (see FIGS. 3 and 4) such as a semiconductor wafer and processes them one by one. As shown in FIG. 1, the substrate processing apparatus 100 is provided with a substrate processing unit 3 and an indexing unit 4 in the frame 1, and the substrate processing unit 3 is formed with a transfer chamber 2 extending in a predetermined horizontal direction. The portion 4 is coupled to one side of the longitudinal direction of the transfer chamber 2 in plan view.

The substrate processing unit 3 is disposed on the one side in the direction orthogonal to the longitudinal direction of the transfer chamber 2, and the first processing unit 51 and the third processing unit 53 are arranged in parallel along the indexing unit 4 side along the transfer chamber 2 . Moreover, the second processing unit 52 and the fourth processing unit 54 are disposed at positions facing the first and third processing units 51 and 53 via the transfer chamber 2, respectively. Further, the chemical tank 6 is disposed on the side opposite to the second processing unit 52 of the fourth processing unit 54.

Each of the processing units 51 to 54 includes three processing chambers stacked in three stages, and the substrate processing unit 3 is provided with a total of twelve processing chambers 5A to 5L. More specifically, the first processing unit 51 sequentially deposits three processing chambers, that is, the processing chamber 5A, the processing chamber 5B, and the processing chamber 5C from below. Further, the second processing unit 52 sequentially deposits the processing chamber 5D, the processing chamber 5E, and the processing chamber 5F from below. Further, the third processing unit 53 sequentially deposits the processing chamber 5G, the processing chamber 5H, and the processing chamber 5I from below. Further, the fourth processing unit 54 sequentially deposits the processing chamber 5J, the processing chamber 5K, and the processing chamber 5L from below.

As shown in FIG. 2, the substrate transfer robot 7 is disposed in the transfer chamber 2. The substrate transfer robot 7 carries out the loading of the substrate W into the processing chambers 5A to 5L or the removal of the substrate W from the processing chambers 5A to 5L by the robot (not shown) entering and leaving the processing chambers 5A to 5L.

As shown in FIG. 2, the indexing robot 8 is disposed in the indexing unit 4. Further, although not shown, a wafer placing portion is provided on the side of the indexing portion 4 opposite to the substrate processing portion 3. In the wafer mounting portion, a plurality of wafers in which a plurality of substrates W are stacked in a plurality of stages are accommodated in parallel. Further, the indexing robot 8 allows the robot hand to enter and exit the wafer disposed in the wafer mounting portion, and takes out the substrate W from the wafer and the substrate W into the wafer. Further, the indexing robot 8 also has a function of transferring the substrate W to and from the substrate transfer robot 7.

The chemical tank 6 is divided by partition walls, and contains therein several kinds of chemical liquids to be stored in the processing chambers 5A to 5L, such as SC1 (ammonia hydrogen peroxide water mixed solution) and SC2 (hydrochloric acid hydrogen peroxide mixed). A solution such as a liquid), a SPM (sulfuric acid/hydrogen peroxide mixture), a hydrofluoric acid, or a buffered hydrofluoric acid (Buffered HF: a mixture of hydrofluoric acid and ammonium fluoride). In the present embodiment, DIW (deionized water) is used as one of the treatment liquids for performing the predetermined treatment on the substrate W. In addition, two kinds of chemical liquids (hereinafter referred to as "first chemical liquid" and "second chemical liquid") are prepared in advance, and DIW and the first chemical liquid and/or the second liquid are mixed at an appropriate mixing ratio as described below. As the chemical liquid, a mixed liquid for substrate processing is produced as the "treatment liquid" of the present invention. Further, in the present embodiment, carbonated water (hereinafter referred to as "CO2 water") obtained by dissolving carbon dioxide gas in DIW is used as the "treatment liquid" of the present invention. Then, the processing liquids are supplied to the respective processing chambers 5A to 5L via a processing liquid system including piping, valves, and the like, and the substrate W is processed by the processing liquid.

Fig. 3 is a conceptual diagram showing a treatment liquid system for generating and supplying a treatment liquid. 4 is a view showing a part of the treatment liquid system shown in FIG. 3. The substrate processing apparatus 100 shown in Fig. 1 is configured to be connected to a facility of a factory to receive supply of DIW and high-purity nitrogen gas (N2). The substrate processing apparatus 100 is provided with a DIW supply unit 6A, a CO 2 water supply unit 6B, and four chemical supply units 6C to 6F in order to form a plurality of processing liquid systems. The chemical liquid supply units 6C to 6F in these are provided corresponding to the processing units 51 to 54, respectively. In other words, the chemical solution supply unit 6C has a function of generating a mixed liquid suitable for the substrate processing performed by the first processing unit 51 and supplying it to the processing chambers 5A to 5C. Further, the chemical supply unit 6D has a function of generating a mixed liquid suitable for the substrate processing performed by the second processing unit 52 and supplying it to the processing chambers 5D to 5F. Further, the chemical supply unit 6E has a function of generating a mixed liquid suitable for the substrate processing performed by the third processing unit 53 and supplying it to the processing chambers 5G to 5I. Further, the chemical solution supply unit 6F has a function of generating a mixed liquid suitable for the substrate processing performed by the fourth processing unit 54 and supplying it to the processing chambers 5J to 5L.

In addition, since the chemical liquid supply units 6C to 6F have the same configuration and the same function, only the configuration of the chemical liquid supply unit 6C is shown in FIG. 4, and the configuration of the other chemical liquid supply units 6D to 6F is omitted. Further, reference numeral 10 in Fig. 3 denotes a control unit that controls each unit of the apparatus to generate a desired mixed liquid and CO 2 water, and supplies the mixed liquid and CO 2 water to the substrate W for processing. The supply of DIW or the like is controlled when the washing treatment is performed using the washing liquid described below. Hereinafter, the configuration of the DIW supply unit 6A, the CO2 water supply unit 6B, and the chemical solution supply unit 6C will be described with reference to FIGS. 3 and 4, and the configuration of the cleaning liquid and the use of the cleaning liquid. The washing process will be described.

The DIW supply unit 6A has a function of supplying the DIW supplied from the DIW supply source installed in the facility to a CO 2 water supply unit 6B, and supplying it to the CO 2 water supply unit 6B. The chemical solution supply units 6C to 6F are supplied to the respective chemical supply units 6C to 6F at a flow rate or a pressure of the chemical supply units 6C to 6F. More specifically, in the DIW supply unit 6A, the piping P1 connected to the DIW supply source is branched into three, and the piping P2 is connected to the CO 2 water supply unit 6B, and the piping P3 is further branched into four and connected to the chemical liquid supply. Department 6C~6F. Moreover, the remaining piping P4 is a piping for discharge.

In the same manner as the "medicine supply unit" described in Japanese Patent No. 4,630,881, a branch pipe P5 having a mounting portion P5a capable of detaching the cleaning liquid described in detail herein is inserted into the pipe P1. In the state where the cleaning liquid is installed in the P5a, the DIW flows directly into the pipes P2 to P4 via the branch pipe P5. On the other hand, when the cleaning liquid is installed, the cleaning liquid stored in the cleaning liquid is mixed into the DIW via the mounting portion P5a to generate a cleaning liquid mixture (=DIW+cleaning liquid), and the cleaning mixture is mixed. The liquid flows into the pipes P2 to P4 via the branch pipe P5.

A valve V1 and a flow control valve V2 are inserted into the pipe P2. When the valve V1 is opened in response to an instruction from the control unit 10, the DIW (or the washing mixed liquid) flowing from the pipe P1 is caused to flow to the flow rate control valve V2, and the flow rate is adjusted by the flow rate control valve V2. After the pressure or the like, it is supplied to the CO 2 water supply unit 6B. On the other hand, when the valve V1 is closed in response to an instruction from the control unit 10, the supply of liquid to the CO2 water supply unit 6B is stopped.

In the same manner as the pipe P2, the valve V3 and the flow rate control valve V4 are inserted in the pipe P3, and when the valve V3 is opened in response to a command from the control unit 10, the DIW (or the cleaning) flowing from the pipe P1 is used. The mixed liquid is supplied to the flow rate control valve V4, and is supplied to each of the chemical liquid supply units 6C to 6F by adjusting the flow rate, pressure, and the like by the flow rate control valve V4. On the other hand, when the valve V3 is closed in accordance with an instruction from the control unit 10, the supply of the liquid to all the chemical supply units 6C to 6F is stopped.

Further, a valve V5 is inserted into the pipe P4. The valve V5 is kept in a closed state during the substrate processing. When the valve V5 is opened in response to an instruction from the control unit 10, the DIW or the cleaning mixed liquid remaining in the DIW supply unit 6A can be discharged from the DIW supply unit 6A.

The CO 2 water supply unit 6B has a carbon dioxide solution unit 601. The carbon dioxide dissolution unit 601 is connected to the DIW supply unit 6A via the pipe P2. Further, on the upstream side of the carbon dioxide dissolving portion 601, a valve V6 and a flow rate control valve V7 are interposed in the pipe P2. When the valve V6 is opened in response to an instruction from the control unit 10, the DIW (or the washing mixed liquid) transferred from the DIW supply unit 6A is caused to flow to the flow rate control valve V7 by the flow rate control valve V7. The flow rate, pressure, and the like are adjusted and supplied to the carbon dioxide dissolution unit 601. The carbon dioxide dissolution unit 601 can generate CO 2 water by dissolving carbon dioxide gas in the DIW supplied from the DIW supply unit 6A by the carbon dioxide dissolution unit 601, and supply it to all the processing chambers 5A to 5L. More specifically, one end portion of the branch pipe P5 is connected to the output side of the carbon dioxide solution portion 601. On the other hand, as shown in FIG. 3, the other end portion of the branch pipe P5 is branched into four, and the pipes P6 to P9 are respectively extended to the processing portions 51 to 54. Further, the symbol 602 in Fig. 4 is a filter.

As shown in Fig. 4, a valve V8 is connected to the pipe P6, and the pipe P6 is branched into three pipes P10 to P12 at the front end side of the valve V8, and is connected to the nozzles of the processing chambers 5A to 5C, respectively. 55. Further, valves V9 to V11 are inserted into the pipes P10 to P12, respectively. When the valves V8 and V9 are both opened in accordance with an instruction from the control unit 10, CO2 water is supplied to the nozzle 55 in the processing chamber 5A, and is discharged to the upper surface of the substrate W held by the rotary chuck 56. . On the other hand, when the valve V9 is closed in response to an instruction from the control unit 10, the discharge of the CO2 water to the substrate W is stopped. In these respects, the other processing chambers 5B and 5C constituting the first processing unit 51 are also controlled in the same manner as the processing chamber 5A, and the supply and supply of the CO 2 water can be stopped in units of the processing chamber. The processing units 52 to 54 are also the same in these respects. Therefore, if it is regarded as the entire apparatus, the supply and supply of CO2 water can be stopped in units of the processing unit.

As shown in FIG. 3, the chemical liquid supply unit 6C is connected to one of the pipes P13 to P16 branched into four at the front end side of the pipe P3, and receives the supply of the DIW supplied via the pipe P13. Further, the chemical solution supply unit 6C is connected to a nitrogen gas supply source provided as a facility of the factory via the pipe P17, and receives a supply of high-purity nitrogen gas (N2) from the nitrogen gas supply source. Then, the substrate processing mixture liquid is generated by the following configuration and supplied to the nozzles 57 of the respective processing chambers 5A to 5C to perform predetermined substrate processing on the substrate W. In addition, the other chemical liquid supply units 6D to 6F receive the supply of the DIW via the pipes P14 to P16 in the same manner as the chemical liquid supply unit 6C, and receive the supply of the high-purity nitrogen gas through the pipes P18 to P20, respectively. Then, a mixture liquid for substrate processing is generated and supplied to the processing chambers 5D to 5F to perform substrate processing.

Further, the chemical solution supply unit 6C includes a first amount measuring tank 611 for measuring the first chemical liquid, a second amount measuring tank 612 for measuring the second chemical liquid, and a mixture for processing the substrate to mix the chemical liquid and the DIW. The liquid mixture generating tank 613. The mixed liquid production tank 613 is connected to the liquid circulation pipe P21 between the liquid inlet and the liquid outlet. A valve V13, a pump 614, and a filter 615 are interposed in the pipe P21. Moreover, the piping P22 is provided so that it may branch from the piping P21.

The measuring tanks 611 and 612 are connected to the liquid inlet of the mixed liquid generating tank 613 through the pipes P23 and P24, respectively. Valves V14 and V15 are inserted into the pipes P23 and P24, respectively. Further, in the measuring tanks 611 and 612, the chemical liquid tanks 616 and 617 are connected to the pipes P25 and P26, respectively. These chemical liquid tanks 616 and 617 are housed in the chemical solution tank 6, and are commonly used in the chemical liquid supply units 6C to 6F. Needless to say, the arrangement of the chemical liquid tank is not limited thereto. For example, the chemical liquid tanks 616 and 617 may be provided for each of the chemical liquid supply units 6C to 6F.

The first chemical liquid supplied from the chemical liquid tank 616 is measured in the first measuring tank 611, and the second chemical liquid supplied from the chemical liquid tank 617 is measured in the second measuring tank 612. When the valves V14 and V15 are opened in response to an instruction from the control unit 10, a predetermined amount of the first chemical liquid and the second chemical liquid are supplied to the mixed liquid generating groove 613. Further, the mixed solution generation tank 613 is connected to the DIW supply unit 6A via the pipe P13. The valve V16 is inserted into the pipe P13, and the DIW is supplied to the mixed liquid generating groove 613 while the valve V16 is opened in accordance with an instruction from the control unit 10. As described above, the first chemical liquid, the second chemical liquid, and the DIW are supplied to the mixed solution generating tank 613 to produce a mixed liquid for substrate processing. Further, in the present embodiment, the specific resistance meter 618 is provided in order to strictly control the mixing ratio of the first chemical liquid constituting the mixed liquid, the second chemical liquid, and the DIW. In other words, the liquid outlet of the mixed liquid generating tank 613 is connected to the specific resistance meter 618 through the pipe P27, and when the valve V17 inserted into the pipe P27 is opened in accordance with an instruction from the control unit 10, the mixed liquid generating groove 613 is provided. The mixture liquid is injected into the specific resistance meter 618 and the value reflecting the above mixing ratio is output from the specific resistance rate meter 618 to the control unit 10. The control unit 10 controls each unit of the chemical solution supply unit 6C based on the value, whereby a mixed liquid suitable for substrate processing in the processing chambers 5A to 5C can be generated.

In this way, the liquid mixture for substrate processing having a predetermined mixing ratio is transferred from the mixed liquid generating tank 613 via the filter 615 and the pipes P21 and P22 to the mixed liquid storage tank 619 for temporarily storing the mixed liquid by the pump 614. . Two valves V18 and V19 are inserted into the pipe P22, and between the two valves V18 and V19, the pipe P22 is connected to the pipe P17. In addition, the valve V20 is inserted into the pipe P17, and the valve V20 is opened and closed according to an instruction from the control unit 10, thereby controlling the supply and supply of the high-purity nitrogen gas to the pipe P22. In other words, the high-purity nitrogen gas is sent to the mixed solution storage tank 619 via the pipe P22 by opening the valves V19 and V20 while the valve V18 is closed. On the other hand, the substrate processing mixed liquid is supplied to the mixed solution storage tank 619 by opening the valves V18 and V19 while the valve V20 is closed.

A liquid circulation pipe P28 is connected between the liquid inlet and the liquid outlet of the mixed solution storage tank 619. In addition, the valve V21, the pump 620, and the filter 621 are inserted in the pipe P28, and the pump 620 is actuated by the command from the control unit 10, whereby the substrate processing mixed liquid is circulated in the mixed solution storage tank 619 and the pipe P28. .

A pipe P29 is provided to branch from the pipe P28, and the pipe P29 is connected to the specific resistance meter 618. In addition, the valve V22 is inserted into the pipe P29, and when the valve V22 is opened in response to a command from the control unit 10, the mixed liquid circulated between the mixed solution storage tank 619 and the pipe P28 flows into the ratio via the pipe P29. Resistivity meter 618. Further, the value of the mixing ratio of the mixed liquid is output from the specific resistance meter 618 to the control unit 10, and the mixing ratio of the circulating mixed liquid can be monitored.

Further, in the pipe P28, the other pipe P30 is branched, and the front end portion of the pipe P30 is further branched into three pipes P31 to P33, and the pipes P31 to P33 are connected to the nozzles 57 of the processing chambers 5A to 5C, respectively. Further, valves V23 to V26 are inserted into the pipes P30 to P33, respectively. Therefore, the above-described substrate processing mixed liquid that has been circulated can be independently supplied to each of the processing chambers 5A to 5C at an appropriate timing by switching the opening and closing states of the valves V23 to V26 in accordance with the command from the control unit 10. In this manner, the processing chamber to which the mixed solution for substrate processing is supplied discharges the mixed liquid from the nozzle 57 to the substrate W, and the substrate W is treated with the first chemical liquid and the second chemical liquid. When the processing is completed, CO 2 water is supplied from the other nozzle 55 to the substrate W as described above, and the processing and the rinsing process using the chemical liquid are performed.

In order to discharge the treatment liquid used in each of the processing chambers 5A to 5C, that is, the mixed liquid (=first chemical liquid + second chemical liquid + DIW) or CO 2 water, the processing chambers 5A to 5C are separately provided. There are pipings for discharge P34 to P36. The pipes P34 to P36 are extended to the specific resistance meter 618. Further, valves V27 to V29 are inserted into the pipes P34 to P36. Therefore, if only one of the valves V27 to V29 is selectively opened according to an instruction from the control unit 10, the liquid discharge from the processing chamber corresponding to the valve is transmitted to the specific resistance meter 618, thereby detecting The concentration or ratio of the liquid medicine in the liquid discharge. In addition, the symbol P37 in FIG. 4 is a piping for discharge.

In the substrate processing apparatus 100 configured as described above, the DIW, the CO 2 water, and the substrate processing mixed liquid, which are examples of the "treatment liquid" of the present invention, are supplied from the following treatment liquid system. The DIW is transmitted to the substrate W via a processing liquid system including the DIW supply unit 6A, the CO 2 water supply unit 6B, and the chemical supply units 6C to 6F. Further, the CO 2 water is transported to the substrate W via the processing liquid system including the CO 2 water supply unit 6B. Further, the mixed liquid for substrate processing is transferred to the substrate W via the processing liquid system including the chemical supply units 6C to 6F.

When the substrate processing apparatus 100 having the processing liquid systems is installed in a factory, it is necessary to remove contaminants such as particles (dust) existing inside the processing liquid system before the substrate processing apparatus 100 operates as described above. Therefore, in the present embodiment, the branch pipe P5 is provided in the pipe P1 in the DIW supply unit 6A as shown in Fig. 4, and the cleaning liquid 以下 described below is attached to the mounting portion P5a of the branch pipe P5 as appropriate. Thereby, all of the processing liquid system for transmitting DIW, that is, the DIW supply unit 6A, the CO2 water supply unit 6B, and the chemical supply units 6C to 6F can be washed at one time. Hereinafter, the configuration of the cleaning liquid and the cleaning method of the treatment liquid system using the cleaning liquid will be described.

5A and 5B are views showing an embodiment of the cleaning liquid crucible of the present invention, and Fig. 5A shows an arrangement state of the cleaning liquid crucible when the cleaning liquid and nitrogen gas are taken in, and Fig. 5B shows the washing state. The configuration status of the cleaning solution during the net treatment. Moreover, Fig. 6A is a view schematically showing a washing method using a cleaning liquid. The cleaning liquid cartridge 9 has a crucible body 91 and a gas introduction portion 92. The crucible body 91 is a pressure resistant bottle, and a fluororesin such as PFA (perfluoroalkoxy fluororesin) can be used as the bottle material, but is not limited thereto. A storage space 912 for storing the cleaning liquid is disposed inside the main body portion 911 of the crucible body 91 (FIG. 6A). Further, an opening portion 915 for allowing the filling of the cleaning liquid into the storage space 912 and the removal of the cleaning liquid from the storage space 912 is provided in the neck portion 914 extending from the main body portion 911 via the truncated cone portion 913.

Further, an orifice plate 93 is attached to the opening 915. As shown in FIG. 5A, the orifice plate 93 is provided with an orifice 931 having an opening diameter smaller than the opening diameter of the opening portion 915. Therefore, when the filling of the cleaning liquid into the storage space 912 and the washing liquid are taken out from the storage space 912, the flow rate is restricted by the orifice plate 93. In particular, the flow rate per unit time of the cleaning liquid which is extruded to the DIW flowing in the branch pipe P5 by the above-described orifice 931 can be adjusted by the arrangement of the orifice plate 93. The desired mixing ratio is compared to the cleaning mixture (=DIW+washing solution).

Further, a recess 94a of the quick connector is embedded in the neck portion 914. Although not shown in the drawings, a check valve structure is incorporated in the recess 94a of the quick connector, and the opening portion 915 is closed in a so-called unmounted state in which the convex portion 95a of the quick connector is not attached to the recess 94a. The storage space 912 is sealed. On the other hand, when the convex portion 95a of the quick connector is attached to the concave portion 94a, the opening portion 915 is opened to allow the storage space 912 to communicate with the outside of the crucible body 91, via the quick connector (= recess 94a + convex portion 95a) The filling of the cleaning liquid into the storage space 912 and the removal of the cleaning liquid from the storage space 912 are performed. As described above, the concave portion 94a functions as a first switching portion that switches the opening and closing of the opening portion 915. Further, the convex portion 95a of the quick connector shown in Fig. 5A is attached to the front end portion of the supply pipe 96 for supplying the cleaning liquid, and serves as a dedicated member for filling the cleaning liquid. Moreover, the convex portion 95a of the quick connector shown in FIG. 5B is attached to the attachment portion P5a of the branch pipe P5 and serves as a dedicated component for taking out the cleaning liquid to the inside of the branch pipe P5.

The gas introduction portion 92 includes a pipe 921 that passes through the truncated cone portion 913 of the crucible body 91 to connect the storage space 912 with the outside of the crucible body 91. In other words, one end of the pipe 921 is extended to the storage space 912, and the other end is extended to the outside of the weir body 91, and the inside of the pipe 921 functions as an air supply path (not shown). Further, a recess 94b of the quick connector is fitted to the other end of the pipe 921. The concave portion 94b has the same configuration as the concave portion 94a, and closes the air supply path without blocking the convex portion 95b of the quick connector with the concave portion 94b, thereby blocking the storage space 912 from the outside air. On the other hand, when the convex portion 95b of the quick connector is attached to the concave portion 94b, the air supply path is opened to allow the storage space 912 to communicate with the outside of the crucible body 91, via the quick connector (= recess 94b + convex portion 95b). A gas, such as high purity nitrogen, is delivered to the storage space 912. As described above, the concave portion 94b functions as a second switching portion that switches the opening and closing of the air supply path. Further, the convex portion 95b of the quick connector shown in Fig. 5A is attached to the front end portion of the high pressure pipe 97 for pumping nitrogen gas, and serves as a dedicated member for filling the nitrogen gas to form the high pressure gas region 98 in the storage space 912.

Further, as shown in FIG. 6A, in the storage space 912 of the crucible body 91, a filter 99 is disposed opposite to the opening 915, and the particles present in the cleaning liquid can be captured to supply the cleaned cleaning liquid.

Next, a method of cleaning the substrate processing apparatus 100 using the cleaning liquid 匣9 will be described with reference to FIGS. 6A and 6B. In the embodiment, as shown in the column (a) of FIG. 6A, the cleaning liquid 9 (hereinafter referred to as "empty") in which the cleaning liquid is not stored is prepared, and is transported to the substrate processing apparatus 100. Workshop (transportation steps). The treatment of the vacant liquid 匣9 in the vacant state is relatively easy, and in particular, even if the factory is located overseas, the cleaning liquid 匣9 can be easily transported.

As shown in the column (b) of FIG. 6A, the factory that has received the space 9 is in a state where the space 9 is erected, and is attached to the front end of the supply pipe 96 connected to the supply source of the cleaning liquid. The convex portion 95a of the connector is mounted in the recess 94a of the quick connector of the open space 9. Then, the washing liquid is sent to the storage space 912 of the space 9 via the supply pipe 96 and the quick connector, and the washing liquid is filled into the storage space 912 (storing step). Here, as the cleaning liquid, a hydrochloric acid solution obtained by dissolving hydrogen chloride gas in pure water and ammonia solution generated by dissolving ammonia gas in pure water, which is also used in the invention described in Japanese Patent No. 4630881, is used. In addition to the hydrofluoric acid solution or the like which is produced by dissolving hydrogen fluoride gas in pure water, for example, SC1 may be used. In the present embodiment, SC1 is used as a cleaning liquid, and the storage space 912 is filled into the cleaning liquid 经由9 via the opening 915. . When the filling of the cleaning liquid (SC1) is completed, the convex portion 95a is removed and the opening portion 915 is closed by the concave portion 94a.

When the filling of the cleaning liquid is completed in this manner, the convex portion 95b of the quick connector attached to the front end of the high-pressure pipe 97 connected to the supply source of the high-purity nitrogen gas is installed in the quick connector of the gas introduction portion 92. Concave portion 94b. Further, high-purity nitrogen gas is supplied to the storage space 912 in which the cleaning liquid has been stored by the high-pressure pipe 97 and the quick connector, and a pressure higher than atmospheric pressure and suitable for extrusion of the cleaning liquid is formed in the storage space 912, for example, A high pressure gas zone 98 of about 0.4 MPa. Thereafter, the convex portion 95b is removed, and the air supply path (the inside of the pipe 921) is closed by the concave portion 94b. In this manner, the cleaning liquid 9 in a state in which the washing liquid (SC1) and the high-pressure gas region 98 are stored in the storage space 912 is obtained. When the internal volume of the cleaning liquid cartridge 9 is set to, for example, about 2 liters or less in advance, the cleaning liquid cartridge 9 can be easily moved to the substrate processing apparatus 100, and excellent displaceability can be obtained. Therefore, in the present embodiment, the cleaning liquid 9 is prepared in advance before the substrate processing apparatus 100 is cleaned, and when the cleaning is performed, the cleaning liquid 9 is transferred to the substrate processing apparatus 100.

Here, for example, when all of the DIW supply unit 6A, the CO2 water supply unit 6B, and the chemical supply unit 6C to 6F in the substrate processing apparatus 100 are washed at once, as shown in (d) of FIG. 6A and (e) As shown in the column, after the cleaning liquid 匣9 is inverted, the concave portion 94a of the quick connector is attached to the convex portion 95a attached to the mounting portion P5a. Then, the opening portion 915 is opened, and the cleaning liquid (SC1) is pressurized to the opening portion 915 by the high pressure gas region 98, and is extruded through the orifice 931 to the DIW in the branch pipe P5. Further, inside the branch pipe P5, the washing liquid (SC1) is mixed in the DIW to produce a washing liquid mixture (=DIW+SC1). This washing liquid mixture is supplied not only to the DIW supply unit 6A but also to the CO 2 water supply unit 6B and the chemical liquid supply unit 6C to 6F as shown in FIG. 6B, and is also supplied to all the processing chambers 5A to 5L. These are washed (supply step). In order to facilitate the understanding of this aspect, a portion where the cleaning mixed liquid is supplied and washed in FIG. 6B is marked. This aspect is also the same in FIG. 6C which will be described later. In addition, the cleaning mixture to be used is discharged to the outside of the processing liquid system of the substrate processing apparatus 100 from the discharge pipes P4, P34 to P37, the nozzles 55, and the like. When the supply step is completed, the supply of the cleaning liquid from the cleaning liquid 9 is stopped, but the supply of the DIW from the DIW supply unit 6A is continued, whereby the cleaning liquid remaining in the processing liquid system of the substrate processing apparatus 100 is gradually replaced. Into DIW (flushing step). When the replacement of the self-cleaning mixed liquid into the DIW is completed, the supply of the DIW from the DIW supply unit 6A is stopped, and the washing process of the processing liquid system is terminated.

The supplying step and the rinsing step may be continuously performed as described above, or after the supplying step, the rinsing step may be performed after being left for a fixed period of time. In other words, the supply of the cleaning liquid from the branch pipe P5 is performed in the state in which the valves V9 to V11 and the valves V27 to V29 are opened, whereby the cleaning mixture after use is discharged from the discharge pipes P4, P34 to P37 and the nozzle 55. . After the cleaning of the treatment liquid system is performed for a fixed period of time in this manner, the supply of the DIW from the DIW supply unit 6A and the supply of the cleaning liquid from the branch pipe P5 are stopped, and the valves V9 to V11 and the valves V27 to V29 are closed. Thereby, the treatment liquid system is filled with the mixed cleaning liquid. A fixed time (for example, several hours) is placed in this state (placement step). Thereafter, the valves V9 to V11 and the valves V27 to V29 are opened, and the supply of the DIW from the DIW supply unit 6A is restarted, and the mixed cleaning liquid remaining in the treatment liquid system is replaced with DIW (rinsing step).

As described above, in the case where the placing step is interposed between the supply step and the rinsing step, the cleaning quality of the treatment liquid system becomes higher than the case where the supply step and the rinsing step are continuously performed.

As described above, according to the present embodiment, the high-pressure gas region 98 is formed in advance in the storage space 912. Therefore, if the cleaning liquid 匣9 is installed in the branch pipe P5, the cleaning liquid can be squeezed by the high-pressure gas region 98. The DIW flowing in the branch pipe P5 is discharged to efficiently produce the washing liquid mixture (=DIW+SC1). Further, the DIW supply unit 6A, the CO2 water supply unit 6B, the chemical supply units 6C to 6F, and the processing chambers 5A to 5L can be efficiently washed by the cleaning mixture.

Further, in the above embodiment, the cleaning liquid is extruded through the orifice 931 to the DIW flowing inside the branch pipe P5. Therefore, the mixing ratio of the DIW and the cleaning liquid (SC1) in the washing liquid mixture can be accurately controlled, and an excellent washing effect can be obtained.

Further, in the above embodiment, the amount of the cleaning liquid that can be stored in the cleaning liquid 匣9 is about 2 liters, so that the rinsing liquid 匣9 has excellent transferability. Further, by mounting the cleaning liquid crucible 9 on the convex portion 95a attached to the mounting portion P5a, it can be washed over a wide range, and excellent washing workability can be obtained.

In addition, in the above-described embodiment, the cleaning liquid (SC1) is supplied from the cleaning liquid 9 to generate a cleaning liquid mixture (=DIW+SC1), and the cleaning liquid mixture is washed in the processing liquid system of the DIW. deal with. Here, not only the cleaning mixed liquid is supplied but also the control unit 10 can further improve the washing effect by operating the respective parts of the apparatus, in particular, the pump or the valve. In order to actuate each part of the apparatus in parallel with the supply of the washing liquid mixture as described above, it is also possible to prepare a preparation suitable for washing of the treatment liquid system, that is, a so-called internal washing formula. The control unit 10 performs cleaning of the treatment liquid system based on the internal washing recipe.

Further, in the above embodiment, the filter 99 is disposed in the storage space 912 to capture and remove the particles in the cleaning liquid, so that the quality of the cleaning liquid can be improved, and a high washing effect can be obtained.

Further, in the above embodiment, the cleaning liquid is extruded through the orifice 931 to the branch pipe P5, so that the mixing ratio of the DIW and the cleaning liquid (SC1) in the cleaning mixed liquid can be accurately controlled. Here, the mixing ratio may be monitored based on the detection result obtained by the specific resistance meter 618, and the mixing ratio may be appropriately adjusted based on the detection result. For example, when the detection result deviates from the value corresponding to the mixing ratio, the orifice plate 93 installed in the cleaning liquid cartridge 9 may be replaced with a different orifice diameter, or may be replaced with the orifice plate 93. The cleaning solution 匣9.

Further, in the above-described embodiment, the amount of the cleaning liquid that can be stored in the cleaning liquid 匣9 is about 2 liters, so that the rinsing liquid 匣9 has excellent transferability and can be easily formed with respect to the processing liquid system. The piping is loaded and unloaded. Therefore, the inside of the substrate processing apparatus 100 can be easily cleaned across a wide range, and excellent cleaning workability can be obtained.

The present invention is not limited to the above-described embodiments, and various modifications may be made in addition to the above without departing from the spirit and scope of the invention. For example, in the above-described embodiment, the branch pipe P5 is provided in the pipe P1, and the cleaning mixed liquid (=DIW+SC1) is supplied to the entire processing liquid system of the DIW. However, the installation position of the branch pipe P5 is not limited thereto. For example, as shown in FIG. 6C, the branch pipe P5 is provided in the pipe P13 of the chemical solution supply unit 6C, and the cleaning liquid 匣9 is selectively attached to the branch pipe P5, so that only the chemical liquid supply unit 6C can be produced. The treatment liquid system for the substrate processing mixed solution (=first chemical liquid + second chemical liquid + DIW) is supplied to the washing liquid mixture. In this case, the other chemical liquid supply units 6D to 6F can generate the substrate processing mixed liquid as usual, and the substrate processing is performed by the processing units 52 to 54. In this respect, the same applies to the case where the branch pipe P5 is provided in the piping P13 of the other chemical liquid supply units 6D to 6F. In the case of the piping P2 or the like provided in the CO2 water supply unit 6B, the cleaning liquid mixture (=DIW+SC1) can be supplied to the entire CO2 water treatment liquid system. Of course, it is also possible to arrange the branch pipe P5 at a plurality of locations and selectively install the cleaning liquid crucible 9.

Further, in the above embodiment, one attachment portion P5a is provided to the branch pipe P5, but a plurality of attachment portions P5a may be provided. In this case, a plurality of cleaning liquids 9 can be installed, so that the supply amount of the cleaning liquid can be increased. Further, the number of the attachment portions P5a of the branch pipes P5 may be different. For example, the DIW treatment liquid system is required to supply the cleaning mixture liquid at a plurality of locations, and therefore, it can be configured such that the branch pipe P5 having a plurality of mounting portions P5a is inserted into the pipe P1, and on the other hand, the chemical liquid is applied. The pipe P13 of the supply unit 6C is inserted into the branch pipe P5 having one mounting portion P5a.

Further, in the above embodiment, during the period in which the cleaning liquid cartridge 9 is mounted, the air supply path is closed by the recess 94b of the quick connector, and the nitrogen gas preliminarily filled in the high pressure gas region 98 of the storage space 912 is used for washing. The cleaning of the clean liquid from the washing liquid 匣9. That is, the cleaning liquid is pressurized only by using the nitrogen gas in the high pressure gas region 98. Therefore, there is a case where the pressure of the high pressure gas region 98 gradually decreases with the washing process, and the amount of the washing liquid is changed. Therefore, for example, as shown in FIG. 7, the cleaning liquid 匣 9 may be attached to the mounting portion P5a of the branch pipe P5, that is, the cleaning liquid 匣 9 is installed in an auxiliary pressure from the gas introduction portion 92. Send nitrogen. Thereby, the pressure of the high-pressure gas region 98 can be fixedly maintained by supplementing nitrogen gas in the washing process, and the amount of the cleaning liquid can be stabilized. In order to obtain such an effect, it is preferable to carry out flow control by the flow rate control valve V30 as shown in Fig. 7, and assist nitrogen gas.

Further, in the case of the configuration shown in Fig. 7, it is also possible to form a high-pressure gas region 98 before the installation of the cleaning liquid crucible 9, and to form a high-pressure gas region 98 while introducing nitrogen gas after installation. Extrusion of the cleaning solution on one side.

Further, in the above embodiment, the space 9 (see the column (a) in Fig. 6A) is transported to the factory, and the washing liquid and the nitrogen gas are filled into the washing liquid 9 at the factory or the periphery thereof, but the washing liquid 匣The transportation time of 9 is not limited to this. For example, after the cleaning liquid is filled, the cleaning liquid is transported to the factory. As described above, the filling of the nitrogen gas is carried out in the factory, and in this case, various restrictions are imposed in order to transport the cleaning liquid 9 in a state of being filled with a high-pressure gas (high-pressure nitrogen gas). Further, there is a case where the gas component is dissolved in the cleaning liquid immediately after the high-pressure gas region 98 is formed, the composition of the cleaning liquid fluctuates, or the pressure of the high-pressure gas region 98 is lowered. Therefore, in order to suppress or avoid such effects, it is desirable to perform nitrogen filling around the factory or the factory. Further, it is preferred to carry out the filling of nitrogen gas immediately before the washing treatment.

The invention has been described above on the basis of specific embodiments, but the description is not intended to be construed in a limiting sense. With reference to the description of the invention, various modifications of the disclosed embodiments will be apparent to those skilled in the <RTIgt; It is therefore contemplated that the appended claims are intended to cover such modifications and alternatives

The present invention can be applied to a cleaning liquid for storing a cleaning liquid for cleaning a substrate processing apparatus, and all the techniques for cleaning the substrate processing apparatus using the cleaning liquid.

Claims (10)

A cleaning solution for storing a cleaning liquid for a substrate processing apparatus for processing a substrate by processing a processing liquid transferred through a processing liquid system, and installing the same in the processing liquid system The cleaning liquid is supplied to the processing liquid system, and includes: a crucible body having a storage space for storing the cleaning liquid and an opening portion communicating with the storage space; and a gas introduction portion having communication with the storage a gas supply path of the space, wherein the gas supplied from the outside of the crucible body is introduced into the storage space in which the cleaning liquid is stored via the gas supply path, and a high-pressure gas region higher than atmospheric pressure is formed in the storage space; a first switching unit that switches between opening and closing of the opening; and a second switching unit that switches opening and closing of the air supply path; and the first switching unit is installed before the processing liquid system The switching unit closes the opening and seals the cleaning liquid in the storage space, and the second switching unit opens the air supply path to form the high After the gas region is closed, the gas supply path is closed and the high-pressure gas region is sealed in the storage space, whereby the cleaning liquid and the high-pressure gas region are coexisted in the storage space to be loaded into the processing liquid system. In the above, the first switching unit opens the opening, and the cleaning liquid is extruded into the processing liquid system through the opening through the high-pressure gas region. The cleaning liquid of claim 1, wherein the second switching unit holds the gas supply path closed in the installation of the processing liquid system. The cleaning liquid of claim 1, wherein the cleaning liquid system is installed The second switching unit opens the gas supply path and replenishes the gas to the high-pressure gas region. A cleaning solution for storing a cleaning liquid for a substrate processing apparatus for processing a substrate by processing a processing liquid transferred through a processing liquid system, and installing the same in the processing liquid system The cleaning liquid is supplied to the processing liquid system, and includes: a crucible body having a storage space for storing the cleaning liquid and an opening portion communicating with the storage space; and a gas introduction portion having communication with the storage a gas supply path of the space, wherein the gas supplied from the outside of the crucible body is introduced into the storage space in which the cleaning liquid is stored via the gas supply path, and a high-pressure gas region higher than atmospheric pressure is formed in the storage space; a state in which the cleaning liquid and the high-pressure gas region are coexisted in the storage space before being installed in the processing liquid system, moving independently from the substrate processing apparatus; and being installed in the processing liquid system by the high voltage The cleaning liquid is extruded into the processing liquid system through the opening in the gas region. The cleaning liquid of claim 1 or 4, further comprising an orifice plate having an orifice having a diameter smaller than an opening diameter of the opening, and being provided in the opening and being adjusted to be extruded through the opening The flow rate of the above-mentioned washing liquid per unit time. The cleaning liquid of claim 1 or 4 further includes a filter that is disposed in the storage space opposite to the opening to capture particles in the cleaning liquid. A cleaning method for cleaning a substrate by using a cleaning liquid to wash a substrate by a processing liquid transferred through a processing liquid system, and is characterized in that a storage step of storing the cleaning solution in the storage space of the cleaning solution of any one of claims 1 to 6 and sealing the opening; and a supply step by the above treatment The liquid system is provided with the cleaning liquid, and the processing liquid system is communicated with the storage space via the opening, and the storage space in which the cleaning liquid is stored is stored through the air supply path before the installation. The high-pressure gas region formed by introducing the gas is extruded through the opening and supplied to the processing liquid system. The cleaning method of claim 7, further comprising the step of transporting the cleaning liquid to a factory in which the substrate processing apparatus is installed, wherein the conveying step is vacant without storing the cleaning liquid and introducing the gas. In the state of being executed, the storing step and the supplying step are performed in the above-mentioned factory or around the factory after receiving the cleaning liquid in the vacant state. The cleaning method of claim 7, further comprising the step of transporting the cleaning liquid to the factory where the substrate processing apparatus is installed, wherein the storing step is performed before the conveying step, and the conveying step is not for the storage The space is formed in a state in which the high-pressure gas region is formed and only the cleaning liquid is stored. The supply step is performed in the factory after receiving the cleaning liquid in a state in which only the cleaning liquid is stored. The cleaning method according to any one of claims 7 to 9, wherein the substrate processing apparatus includes a plurality of the processing liquid systems, and the supplying step selectively installs the cleaning to the plurality of processing liquid systems Liquid helium.