JPH04196534A - Cleaning equipment - Google Patents
Cleaning equipmentInfo
- Publication number
- JPH04196534A JPH04196534A JP33131490A JP33131490A JPH04196534A JP H04196534 A JPH04196534 A JP H04196534A JP 33131490 A JP33131490 A JP 33131490A JP 33131490 A JP33131490 A JP 33131490A JP H04196534 A JPH04196534 A JP H04196534A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- cleaning
- tank
- supplied
- pressurized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 94
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 124
- 238000011282 treatment Methods 0.000 claims abstract description 28
- 238000003860 storage Methods 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、洗浄装置に関し、特に純水を用いて洗浄処理
を行なう洗浄装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a cleaning device, and particularly to a cleaning device that performs a cleaning process using pure water.
（従来の技術）
従来、純水を用いて洗浄処理を行う洗浄装置として、例
えば半導体ウェハ製造装置における洗浄装置がある。(Prior Art) Conventionally, as a cleaning apparatus that performs a cleaning process using pure water, for example, there is a cleaning apparatus used in a semiconductor wafer manufacturing apparatus.
通常、半導体ウェハ製造工場では、半導体ウェハの製造
に必要な純水を工場内に蓄え、この蓄えた純水を純水供
給システムにて各処理部に供給するようにしている。Normally, in a semiconductor wafer manufacturing factory, pure water necessary for manufacturing semiconductor wafers is stored within the factory, and this stored pure water is supplied to each processing section using a pure water supply system.
そして、従来の純水を用いる半導体ウェハの洗浄装置は
、上記純水供給システムと洗浄処理槽とを直結し、純水
供給システムから直接純水を洗浄処理槽に供給して洗浄
処理を行うようにしていた。Conventional semiconductor wafer cleaning equipment that uses pure water connects the pure water supply system and the cleaning tank directly, and performs the cleaning process by directly supplying pure water from the pure water supply system to the cleaning tank. I was doing it.
（発明が解決しようとする課題）
上記従来の洗浄装置にあっては、工場内に予め設置され
ている純水供給システムを利用して、この純水供給シス
テムから直接純水を洗浄処理槽に供給するようにしてい
るが、半導体ウェハの洗浄においては所望する洗浄がで
きず、流量が増加するばかりでなく処理時間が長かった
。(Problems to be Solved by the Invention) The conventional cleaning equipment described above utilizes a pure water supply system installed in advance in the factory, and directly supplies pure water from this pure water supply system to the cleaning treatment tank. However, when cleaning semiconductor wafers, it was not possible to perform the desired cleaning, and not only did the flow rate increase, but the processing time was also long.
従って、スルーブツトが低下するという問題があった。Therefore, there was a problem in that the throughput decreased.
そこで本発明は、洗浄効果を変速で実行し、スルーブツ
トを向上させることのできる洗浄装置を提供することを
、その解決課題としている。SUMMARY OF THE INVENTION The present invention aims to provide a cleaning device that can achieve cleaning effects through variable speeds and improve throughput.
［発明の構成］
（課題を解決するための手段）
本発明は、洗浄処理槽内に純水を供給して、洗浄処理槽
内で被処理体を洗浄処理する洗浄装置において、
前記洗浄処理槽に供給する純水を純水供給部より受け取
って貯える貯水槽と、
前記貯水槽内の純水を０．５〜２ ｋｇ ／ ｃシに加
圧し、この加圧された純水を前記洗浄処理槽に供給可能
とする加圧装置とを備える構成としている。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a cleaning apparatus for supplying pure water into a cleaning tank and cleaning an object to be processed in the cleaning tank, comprising the steps of: a water storage tank that receives and stores pure water from the pure water supply section; pressurizes the pure water in the water storage tank to 0.5 to 2 kg/c; and applies the pressurized pure water to the washing process; The structure includes a pressurizing device that enables supply to the tank.
（作 用）
上記構成の本発明の洗浄装置は、純水供給部から純水を
貯水槽に供給して、半導体ウェハの洗浄工程において一
時的に大量の純水を使用可能にするために、この貯水槽
に一旦純水を貯めるようになっている。従って、純水供
給部がらの供給圧力はそれほど高くなくても、洗浄処理
槽への純水の供給は十分になしうる。(Function) The cleaning apparatus of the present invention configured as described above supplies pure water from the pure water supply section to the water storage tank to temporarily make it possible to use a large amount of pure water in the semiconductor wafer cleaning process. Pure water is temporarily stored in this water tank. Therefore, even if the supply pressure from the pure water supply section is not so high, the pure water can be sufficiently supplied to the cleaning treatment tank.
また、純水を０．５〜２ ｋｇ ／ ｃ−に加圧するこ
とにより洗浄効果を高め、洗浄処理を短時間で満たすこ
とができ、スルーブツトの向上に寄与することができる
。In addition, by pressurizing pure water to 0.5 to 2 kg/c-, the cleaning effect can be enhanced, the cleaning process can be completed in a short time, and this can contribute to an improvement in throughput.
（実施例）
以下、本発明を半導体ウェハ製造装置における洗浄装置
に適用した実施例について、図面を参照して説明する。(Example) Hereinafter, an example in which the present invention is applied to a cleaning device in a semiconductor wafer manufacturing apparatus will be described with reference to the drawings.
第１図において、本実施例の半導体ウェハの洗浄装置は
、３つの洗浄処理ユニット１０，１２゜１４を組合せて
構成されている。また、搬入側の処理ユニット１０には
ローダ１６が接続され、搬出側の処理ユニット１４には
アンローダ１８が接続されており、さらに洗浄処理ユニ
ット１０゜１２間及び洗浄処理ユニット１２．１４間に
、３ユニツトのいずれかに含まれる水中ローダ２０が配
設されている。In FIG. 1, the semiconductor wafer cleaning apparatus of this embodiment is constructed by combining three cleaning processing units 10, 12 and 14. Further, a loader 16 is connected to the processing unit 10 on the carry-in side, an unloader 18 is connected to the processing unit 14 on the carry-out side, and further, between the cleaning processing units 10 and 12 and between the cleaning processing units 12 and 14, An underwater loader 20 included in one of the three units is disposed.
搬入側の洗浄処理ユニット１０は、中心位置に半導体ウ
ェハ２２搬送用の回転搬送アーム２４を配設すると共に
、その周囲でローダ１６の正面及び回転搬送アーム２４
の左隣に各々２つの洗浄処理槽２６，２８を配設するよ
うにしている。本実施例においては、洗浄処理槽２６は
アンモニア処理を行う薬品処理槽として用いられ、洗浄
処理槽２８は水洗処理を行うクイック・ダンプ・リンス
（ＱＤＲ）処理槽として用いられている。The cleaning processing unit 10 on the carry-in side has a rotary transfer arm 24 for conveying semiconductor wafers 22 disposed at the center position, and the front side of the loader 16 and the rotary transfer arm 24 are arranged around it.
Two cleaning treatment tanks 26 and 28 are arranged on the left side of the cleaning tank 26 and 28, respectively. In this embodiment, the cleaning tank 26 is used as a chemical treatment tank for ammonia treatment, and the cleaning tank 28 is used as a quick dump rinse (QDR) treatment tank for water washing.
中央の洗浄処理ユニット１２は、中心位置に配設した回
転搬送アーム２４の周囲で左右両側に水中ローダ２０を
位置させ、その間の前後位置に各々２つの洗浄処理槽３
０，３２を配設するようにしている。本実施例では、洗
浄処理槽３０はフッ酸処理を行う薬品処理槽として用い
られ、洗浄処理槽３２は水洗オーバーフロー処理槽とし
て用いられている。The central cleaning processing unit 12 has underwater loaders 20 positioned on both left and right sides around a rotary transfer arm 24 disposed at the center, and two cleaning processing tanks 3 each at the front and back positions between them.
0 and 32 are arranged. In this embodiment, the cleaning tank 30 is used as a chemical treatment tank for hydrofluoric acid treatment, and the cleaning tank 32 is used as a water washing overflow treatment tank.
搬出側の洗浄処理ユニット１４は、中心位置に配設した
回転搬送アーム２４の周囲で、アンローダ１８の正面側
に洗浄処理槽３４を配設すると共に、回転搬送アーム２
４の右隣に乾燥処理１３６を配設するようにしている。The cleaning processing unit 14 on the unloading side has a cleaning tank 34 disposed on the front side of the unloader 18 around the rotary transport arm 24 arranged at the center position, and
A drying process 136 is arranged on the right side of 4.
本実施例では、洗浄処理槽３４は水洗ファイナルリンス
槽として用いられている。In this embodiment, the cleaning treatment tank 34 is used as a final rinse tank.
そして、２つのキャリア４８上に載置された各々２５枚
ずつの半導体ウェハ２２がローダ１６に搬送されてくる
と、ローダ１６上で所謂オリフラ合せ機構によって半導
体ウェハ２２のオリフラ合せがなされた後、突き上げ機
構により半導体ウェハ２２が持上げられかつ寄せ合わせ
られるようになっている。When the 25 semiconductor wafers 22 placed on each of the two carriers 48 are transferred to the loader 16, the orientation flats of the semiconductor wafers 22 are aligned on the loader 16 by a so-called orientation flat alignment mechanism. The semiconductor wafer 22 is lifted and brought together by the pushing up mechanism.
次いで、回転搬送アーム２４が作動して、ローダ１６上
から半導体ウェハ２２のみを取り出し、洗浄処理槽２６
へ半導体ウェハ２２のみを受渡して洗浄処理を行った後
洗浄処理槽２６より半導体ウェハ２２を受け取って洗浄
処理槽２８、水中ローダ２０へと送り順次洗浄処理を施
す。Next, the rotary transfer arm 24 operates to take out only the semiconductor wafer 22 from the loader 16 and transfer it to the cleaning treatment tank 26.
After only the semiconductor wafers 22 are delivered to and subjected to cleaning processing, the semiconductor wafers 22 are received from the cleaning processing tank 26 and sent to the cleaning processing tank 28 and the underwater loader 20, where they are sequentially subjected to the cleaning processing.
その後、中間の処理ユニット１２及び搬出側の処理ユニ
ット１４の回転搬送アーム２ｏにて、洗浄処理槽３０，
３２、水中ローダ２ｏ洗浄処理槽３４、乾燥処理槽３６
へと搬送してそれぞれ洗浄処理あるいは乾燥処理を施し
た後、アンローダ１８に送られ、半導体ウェハ２２が２
つのキャリア４８に分けて搭載され、搬出されるように
なっている。Thereafter, the cleaning treatment tank 30,
32, underwater loader 2o cleaning treatment tank 34, drying treatment tank 36
The semiconductor wafers 22 are transferred to the unloader 18, where they are subjected to cleaning or drying processing, and then transferred to the unloader 18, where the semiconductor wafers 22 are
It is designed to be loaded and carried out in two carriers 48.
また、上記クイック・ダンプ・リンス（ＱＤＲ）処理を
行う洗浄処理槽２８は、第３図に示すようにボート６０
上に半導体ウェハ２２を載置した状態で半導体ウェハ２
２を収容するようになっており、その底部には、内径が
例えば２５ｍｍφで洗浄処理液としての純水供給口６２
が設けられている。Further, the cleaning treatment tank 28 for performing the quick dump rinse (QDR) treatment is connected to the boat 60 as shown in FIG.
Semiconductor wafer 2 with semiconductor wafer 22 placed on top
2, and its bottom has an inner diameter of, for example, 25 mm and a pure water supply port 62 as a cleaning treatment liquid.
is provided.
また、洗浄処理Ｗａ２８の上部外周には、純水供給口６
２より供給された純水がオーバーフローした場合のドレ
イン６４が形成されている。In addition, a pure water supply port 6 is provided on the upper outer periphery of the cleaning processing Wa 28.
A drain 64 is formed in case the pure water supplied from 2 overflows.
そして、この洗浄処理槽２８は、第３図に示すように純
水供給部６６に接続され、かつこの純水供給部６６と洗
浄処理槽２８との間には、２つの貯水槽６８が配設され
るようになっている。この各貯水槽６８には、純水量の
上、下限を検出するための図示しない上限センサー、下
限センサーが設けられている。The cleaning tank 28 is connected to a pure water supply section 66 as shown in FIG. 3, and two water storage tanks 68 are arranged between the pure water supply section 66 and the cleaning tank 28. It is now set up. Each water tank 68 is provided with an upper limit sensor and a lower limit sensor (not shown) for detecting the upper and lower limits of the amount of pure water.
純水供給部６６は、工場内の純水供給システムとして予
め工場内に配設されたものを用いるようになっている。The pure water supply section 66 uses a pure water supply system installed in the factory in advance as a pure water supply system within the factory.
そして、この純水供給部６６から２つの貯水槽６８に純
水を加圧供給するようになっている。Then, pure water is supplied under pressure from this pure water supply section 66 to two water storage tanks 68.
貯水槽６８は、上記純水供給部６６から上記上限センサ
ーが純水の上限を検知するまで加圧供給された純水を一
旦貯めておき、この貯水槽６８から例えば長さが３ｍ程
度、内径が２５ｍｍφの配管６８Ａにより上記洗浄処理
槽２８に上記下限センサーが動作するまで純水が供給さ
れるようになっている。また、これら各貯水槽６８には
、それぞれ加圧装置７０が接続されるようになっている
。The water storage tank 68 temporarily stores pure water that is pressurized and supplied from the pure water supply section 66 until the upper limit sensor detects the upper limit of pure water. Pure water is supplied to the cleaning tank 28 through a pipe 68A having a diameter of 25 mm until the lower limit sensor operates. Further, each of these water tanks 68 is connected to a pressurizing device 70, respectively.
この加圧装置７０は、例えば窒素Ｎ２ガス供給源。This pressurizing device 70 is, for example, a nitrogen N2 gas supply source.
圧力調整用レギ二し−夕、フィルターを接続したものか
らなり、これから圧送されるＮ２ガスをそれぞれの貯水
槽６８に供給して加圧するようになっている。また、こ
の加圧装置７０は、貯水槽６８内に貯めた純水を０．５
〜２ ｋｇ ／ ｃ−に加圧するようにしている。従っ
て、純水供給部６６の供給圧力が低くても、十分に加圧
された状態で洗浄処理槽２８に純水を供給することが可
能で、短時間で洗浄処理槽２８を満たし、スループット
を向上させることが可能となっている。さらに、２つの
貯水槽６８は、それぞれ切替え可能となっており、例え
ば、一方の貯水槽６８から純水を洗浄処理槽２８に供給
している間に、他方の貯水槽に純水を供給するようにす
ることて、洗浄処理間隔を短くすることが可能となる。It consists of a pressure regulating regulator and a filter connected to it, and the N2 gas pumped from this is supplied to each water storage tank 68 to pressurize it. Additionally, this pressurizing device 70 pumps 0.5% of the pure water stored in the water tank 68
I try to pressurize it to ~2 kg/c-. Therefore, even if the supply pressure of the pure water supply section 66 is low, it is possible to supply purified water to the cleaning tank 28 in a sufficiently pressurized state, filling the cleaning tank 28 in a short time and increasing throughput. It is possible to improve. Furthermore, the two water tanks 68 can be switched, for example, while pure water is being supplied from one water tank 68 to the cleaning treatment tank 28, pure water is being supplied to the other water tank. By doing so, it becomes possible to shorten the interval between cleaning treatments.
次に、このクイック・ダンプ・リンス処理の状態につい
て説明すると、まず工場内の純水供給部６６から貯水槽
６８内に純水を加圧供給して、貯水槽６８内に純水を貯
めておく。Next, to explain the state of this quick dump rinse process, first, pure water is supplied under pressure from the pure water supply section 66 in the factory into the water storage tank 68, and the pure water is stored in the water storage tank 68. put.
次いで、加圧装置７０により、気密貯水槽６８内に気体
例えばＮ２ガスを供給して純水を０．５〜２ ｋｇ ／
ｃ−に加圧する。Next, a gas such as N2 gas is supplied into the airtight water storage tank 68 by the pressurizing device 70 to supply pure water at a rate of 0.5 to 2 kg/
Pressurize to c-.
そして、洗浄処理槽２８内にボート６０上に載置された
半導体ウェハ２２が搬入設置された状態で、一方の貯水
槽６８の弁６８Ｂを開放して洗浄処理槽２８に例えば、
オーバーフローする程度の所定量の純水を加圧供給する
。なお、上記加圧が０．５ｋｇ／ｃ−より低い場合には
所望の流量が得られない。逆に、２ ｋｇ ／ （Ｊよ
り高い場合はに、十分な流量は得られるか、純水供給口
６２から洗浄処理槽２８内に流入する純水の勢いが強す
ぎて、ボート６０に載置された半導体ウェハ２２を押上
げたりするおそれがある。そこで、上記加圧は０．５〜
２ ｋｇ ／ ｃｄの範囲内の圧力に設定するのが望ま
しい。Then, with the semiconductor wafers 22 placed on the boat 60 being carried into the cleaning tank 28, the valve 68B of one of the water tanks 68 is opened and the cleaning tank 28 is filled with, for example,
A predetermined amount of pure water is supplied under pressure to the extent that it overflows. Note that if the above-mentioned pressurization is lower than 0.5 kg/c-, the desired flow rate cannot be obtained. On the other hand, if it is higher than 2 kg / There is a risk that the semiconductor wafer 22 that has been applied may be pushed up.
It is desirable to set the pressure within the range of 2 kg/cd.
そして、半導体ウェハ２２を洗浄処理槽２８内の純水に
浸漬し、純水供給口６２とは別に設けた図示しな純水供
給口より少流量にて純水を供給し、オーバーフローさせ
つつ例えば３分間程度洗浄処理する。処理が終るとボー
ト６０を上昇させて半導体ウェハ２２を例えば次工程へ
搬送する。また、図示しない排出口より洗浄処理槽２８
内の純水を排出する。Then, the semiconductor wafer 22 is immersed in pure water in the cleaning treatment tank 28, and pure water is supplied at a small flow rate from a pure water supply port (not shown) provided separately from the pure water supply port 62, and while overflowing, for example, Wash for about 3 minutes. When the processing is completed, the boat 60 is raised and the semiconductor wafer 22 is transported to, for example, the next process. In addition, the cleaning treatment tank 28 is
Drain the pure water inside.
次に、新たな半導体ウェハ２２をボート６０によって処
理槽２８内に搬入設置し、他方の貯水槽６８から洗浄処
理槽２８に純水を加圧供給し、上記説明のように洗浄処
理する。このように、純水は上述のように十分に加圧さ
れた状態となっているため、洗浄処理槽２８の底部に設
けた純水供給口６２より短時間に供給されることとなり
、処理時間が短縮されることとなる。Next, a new semiconductor wafer 22 is carried into the processing tank 28 by the boat 60, and purified water is supplied under pressure from the other water storage tank 68 to the cleaning processing tank 28, and the cleaning processing is performed as described above. In this way, since the pure water is in a sufficiently pressurized state as described above, it is supplied from the pure water supply port 62 provided at the bottom of the cleaning treatment tank 28 in a short time, reducing the processing time. will be shortened.
また、この洗浄処理中に他方の貯水槽６８内に純水供給
部６６から純水を供給しておくことにより、次の洗浄処
理に移る際に待ち時間なしてでき、効率のよい処理が可
能となる。In addition, by supplying pure water from the pure water supply unit 66 into the other water storage tank 68 during this cleaning process, there is no waiting time when moving to the next cleaning process, and efficient processing is possible. becomes.
なお、純水洗浄の他のアンモニア処理、フッ酸処理等に
使用する薬液を圧送することも考えられるが、このよう
な毒性液体は安全性の面から極力圧送は行わず、装置の
レイアウト上、止むを得ず圧送する場合以外は避けたほ
うが好ましい。Note that it is also possible to force-feed chemical liquids used in ammonia treatment, hydrofluoric acid treatment, etc. in addition to pure water cleaning, but such toxic liquids should not be pumped as much as possible for safety reasons, and due to the layout of the equipment, It is preferable to avoid this unless pressure feeding is unavoidable.
さらに、窒素Ｎ２により純水を加圧するので、純水の比
抵抗が高い状態で供給できるため、純水による半導体ウ
ェハ表面の酸化膜の生成を抑える効果も期待できる。Furthermore, since the pure water is pressurized with nitrogen N2, the pure water can be supplied in a state with a high specific resistance, so that the effect of suppressing the formation of an oxide film on the surface of the semiconductor wafer due to the pure water can be expected.
［発明の効果］
以上説明したように、本発明の洗浄装置は、純水供給部
から純水を貯水槽に供給して、この貯水槽に一旦純水を
貯めるようにしたため、純水供給部からの供給圧力はそ
れほど高くなくても、洗浄処理槽への純水の供給は十分
になし得るという効果がある。[Effects of the Invention] As explained above, the cleaning device of the present invention supplies pure water from the pure water supply section to the water tank and temporarily stores the pure water in the water tank. Even if the supply pressure from the tank is not so high, there is an effect that a sufficient amount of pure water can be supplied to the cleaning treatment tank.
また、貯水槽内に貯めた純水を加圧装置によって０．５
〜２ ｋｇ ／ ｃｊに加圧するようにしたため、純水
供給部の供給圧力が低くても、加圧装置によって純水を
加圧して洗浄処理槽に供給でき、洗浄処理槽内を短時間
で満たし、スルーブツトの向上に寄与することができる
という効果がある。In addition, the pure water stored in the water tank is 0.5
Since it is pressurized to ~2 kg/cj, even if the supply pressure of the pure water supply section is low, the pressurizing device can pressurize pure water and supply it to the cleaning tank, filling the cleaning tank in a short time. This has the effect of contributing to an improvement in throughput.
さらに、半導体ウェハ表面に付着した薬液が、短時間に
供給された純水で置換されることにより、均一な洗浄が
可能であり、清浄面が得られる。Furthermore, by replacing the chemical solution adhering to the surface of the semiconductor wafer with pure water supplied in a short period of time, uniform cleaning is possible and a clean surface can be obtained.
第１図は本発明の一実施例に係る洗浄装置の全体的構成
を示す平面図、
第２図は第１図の洗浄処理槽の状態を示す側面図、
第３図は洗浄処理槽及び貯水槽の状態を示す構成図であ
る。
２８・・・洗浄処理槽、 ６２・・・純水供給口、６４
・・・ドレイン、 ６６・・・純水供給部、６８・・
・貯水槽、 ７０・・・加圧装置。
代理人 弁理士 井 上 −（他１名）第２図Figure 1 is a plan view showing the overall configuration of a cleaning device according to an embodiment of the present invention, Figure 2 is a side view showing the state of the cleaning tank shown in Figure 1, and Figure 3 is a cleaning tank and water storage. It is a block diagram which shows the state of a tank. 28...Cleaning treatment tank, 62...Pure water supply port, 64
...Drain, 66...Pure water supply section, 68...
・Water tank, 70...pressurizing device. Agent Patent attorney Inoue - (1 other person) Figure 2
Claims (2)
被処理体を洗浄処理する洗浄装置において、前記洗浄処
理槽に供給する純水を純水供給部より受け取って貯える
貯水槽と、前記貯水槽内の純水を０．５〜２ｋｇ／ｃｍ
＾３に加圧し、この加圧された純水を前記洗浄処理槽に
供給可能とする加圧装置とを備えることを特徴とする洗
浄装置。(1) In a cleaning device that supplies pure water to a cleaning tank and cleans objects to be processed in the cleaning tank, a water reservoir receives and stores the pure water supplied to the cleaning tank from a pure water supply section. tank and pure water in the water storage tank at a rate of 0.5 to 2 kg/cm.
A cleaning device characterized by comprising: a pressurizing device that pressurizes the water to 3 and can supply the pressurized pure water to the cleaning treatment tank.
給部及び洗浄処理槽のいずれか一方に交互に接続される
前記貯水槽を複数設けたことを特徴とする洗浄装置。(2) The cleaning device according to claim 1, wherein a plurality of the water storage tanks are provided which are alternately connected to either the pure water supply section or the cleaning treatment tank.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02331314A JP3126139B2 (en) | 1990-11-28 | 1990-11-28 | Cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02331314A JP3126139B2 (en) | 1990-11-28 | 1990-11-28 | Cleaning equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04196534A true JPH04196534A (en) | 1992-07-16 |
| JP3126139B2 JP3126139B2 (en) | 2001-01-22 |
Family
ID=18242300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02331314A Expired - Lifetime JP3126139B2 (en) | 1990-11-28 | 1990-11-28 | Cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3126139B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011057674A (en) * | 2009-09-11 | 2011-03-24 | Omnica Gmbh | Composition containing coenzyme q-10 and antioxidant |
| CN113600569A (en) * | 2021-08-13 | 2021-11-05 | 上海氢枫能源技术有限公司 | Multifunctional flushing test system and method for pipeline special for hydrogenation station |
-
1990
- 1990-11-28 JP JP02331314A patent/JP3126139B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011057674A (en) * | 2009-09-11 | 2011-03-24 | Omnica Gmbh | Composition containing coenzyme q-10 and antioxidant |
| CN113600569A (en) * | 2021-08-13 | 2021-11-05 | 上海氢枫能源技术有限公司 | Multifunctional flushing test system and method for pipeline special for hydrogenation station |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3126139B2 (en) | 2001-01-22 |
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