TWI646652B - Inductance combination and its circuit structure - Google Patents
Inductance combination and its circuit structure Download PDFInfo
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- TWI646652B TWI646652B TW106115596A TW106115596A TWI646652B TW I646652 B TWI646652 B TW I646652B TW 106115596 A TW106115596 A TW 106115596A TW 106115596 A TW106115596 A TW 106115596A TW I646652 B TWI646652 B TW I646652B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F21/00—Variable inductances or transformers of the signal type
- H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
- H01F2021/125—Printed variable inductor with taps, e.g. for VCO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
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Abstract
一種電感組合,係將三組線圈配合四個導通埠,以任選兩個導通埠作為輸入埠與輸出埠而能提供多種電感態樣,且將該電感組合線路化以成為線路結構之一部分。 An inductance combination is a combination of three sets of coils with four conductive ports, and optionally two conductive ports as input and output ports to provide a variety of inductance patterns, and the inductance combination is lined to become part of the circuit structure.
Description
本發明係有關一種線路結構,尤指一種具有電感之線路結構。 The present invention relates to a circuit structure, and more particularly to a circuit structure with inductance.
隨著近年來行動通訊裝置之發展,除要求電子元件之效能之增進與元件尺寸的縮小外,亦已發展出諸如具有低雜訊特性之晶片或在基板上整合被動元件用以濾除雜訊,以達到半導體元件之平衡。 With the development of mobile communication devices in recent years, in addition to improving the performance of electronic components and reducing the size of components, such as chips with low noise characteristics or integrating passive components on the substrate to filter out noise To achieve the balance of semiconductor components.
目前在封裝基板上整合多功能或系統元件係為半導體封裝領域的趨勢,故如何降低成本為目前發展非常重要的課題,因而盡量採用相同的分散式元件為降低成本較可行的方式。 At present, the integration of multi-functional or system components on the packaging substrate is a trend in the field of semiconductor packaging. Therefore, how to reduce costs is a very important issue for current development. Therefore, it is more feasible to reduce costs by using the same distributed components.
如第1圖所示,習知半導體封裝件1中,係於一封裝基板10上佈設一半導體晶片11與一被動元件12(如電感、電容或電阻),且該半導體晶片11以銲線110電性連接該封裝基板10之電性接觸墊100,並以封裝膠體13包覆該半導體晶片11、被動元件12與該些銲線110。之後,藉由複數銲球90將該半導體封裝件1接置於一電路板9上。 As shown in FIG. 1, in the conventional semiconductor package 1, a semiconductor wafer 11 and a passive element 12 (such as an inductor, a capacitor, or a resistor) are arranged on a packaging substrate 10, and the semiconductor wafer 11 is bonded with a bonding wire 110. The electrical contact pads 100 of the packaging substrate 10 are electrically connected, and the semiconductor wafer 11, the passive components 12 and the bonding wires 110 are covered with a packaging gel 13. Thereafter, the semiconductor package 1 is mounted on a circuit board 9 by a plurality of solder balls 90.
然而,習知半導體封裝件1中,欲使用相同的分散式元件(如複數個被動元件12)以提供多個電感值時,即需增加該封裝基板10之佈設面積,如此將增加該半導體封裝件1之體積;惟若不增加該封裝基板10之佈設面積,將使該被動元件12佔用面積變大,因而造成佈線空間變小與電性功能受限。 However, in the conventional semiconductor package 1, if the same decentralized component (such as a plurality of passive components 12) is used to provide multiple inductance values, the layout area of the package substrate 10 needs to be increased, which will increase the semiconductor package. The volume of the component 1; however, if the layout area of the package substrate 10 is not increased, the area occupied by the passive component 12 will be increased, which will lead to a smaller wiring space and limited electrical functions.
因此,如何克服習知技術中之種種問題,實已成目前亟欲解決的課題。 Therefore, how to overcome the various problems in the conventional technology has become an urgent problem to be solved.
鑑於上述習知技術之缺失,本發明提供一種電感組合,係包括:第一線圈;第二線圈,係電性連接該第一線圈;第三線圈,係電性連接該第二線圈;第一導通埠,係電性連接該第一線圈;第二導通埠,係電性連接該第二線圈;第三導通埠,係電性連接該第三線圈;以及第四導通埠,係電性連接該第一線圈。 In view of the lack of the above-mentioned conventional technology, the present invention provides an inductor combination including: a first coil; a second coil electrically connected to the first coil; a third coil electrically connected to the second coil; a first The conductive port is electrically connected to the first coil; the second conductive port is electrically connected to the second coil; the third conductive port is electrically connected to the third coil; and the fourth conductive port is electrically connected The first coil.
前述之電感組合中,該第三線圈之其中一端部連接該第二線圈。 In the aforementioned inductance combination, one end of the third coil is connected to the second coil.
前述之電感組合中,該第一至第四導通埠之其中二者係作為訊號輸入埠與訊號輸出埠。 In the aforementioned inductance combination, two of the first to fourth conductive ports are used as a signal input port and a signal output port.
前述之電感組合中,該第三線圈與該第二線圈係位於同一層,且該第一線圈堆疊於該第二線圈與第三線圈上。 In the aforementioned inductance combination, the third coil and the second coil are located on the same layer, and the first coil is stacked on the second coil and the third coil.
前述之電感組合中,該第二線圈藉由導電體連接該第一線圈。 In the aforementioned inductance combination, the second coil is connected to the first coil by a conductor.
前述之電感組合中,該第一導通埠係藉由第一導電部 連接至該第一線圈,該第二導通埠係藉由第二導電部連接至該第二線圈,該第三導通埠係藉由第三導電部連接至該第三線圈,該第四導通埠係藉由第四導電部連接至該第一線圈。 In the aforementioned inductive combination, the first conductive port is connected by the first conductive portion. Connected to the first coil, the second conductive port is connected to the second coil through a second conductive portion, the third conductive port is connected to the third coil through a third conductive portion, and the fourth conductive port It is connected to the first coil through a fourth conductive portion.
前述之電感組合中,該第一至第四導通埠係位於該第一至第三線圈之外圍。 In the aforementioned inductance combination, the first to fourth conductive ports are located on the periphery of the first to third coils.
前述之電感組合中,該第一至第四導通埠係為導電柱,且作為該第一導通埠之導電柱係以其上端面藉由第一導電部連接至該第一線圈,作為該第二導通埠之導電柱係以其上端面藉由第二導電部連接至該第二線圈,作為第三導通埠之導電柱係以其上端面藉由第三導電部連接至該第三線圈,且作為第四導通埠之導電柱係以其下端面藉由第四導電部連接至該第一線圈。 In the aforementioned inductance combination, the first to fourth conductive ports are conductive pillars, and the conductive pillars serving as the first conductive ports are connected to the first coil with the upper end surface thereof through the first conductive portion as the first conductive port. The conductive pillar of the second conductive port is connected to the second coil by its upper end through the second conductive part, and the conductive pillar of the third conductive port is connected to the third coil by its upper end through the third conductive part. And the conductive pillar as the fourth conductive port is connected to the first coil with a lower end surface through a fourth conductive portion.
本發明亦提供一種線路結構,係包括:絕緣體;以及前述之電感組合,係線路化形成於該絕緣體中。 The invention also provides a circuit structure, which includes: an insulator; and the aforementioned inductance combination, which is formed by wiring in the insulator.
前述之線路結構中,該第一至第四導通埠係為形成於該絕緣體中之導電柱。 In the aforementioned circuit structure, the first to fourth conductive ports are conductive pillars formed in the insulator.
前述之線路結構中,該第一至第三線圈係為形成於該絕緣體中之導電跡線。 In the aforementioned circuit structure, the first to third coils are conductive traces formed in the insulator.
前述之線路結構中,該第一導電部係為形成於該絕緣體中之導電跡線。 In the aforementioned circuit structure, the first conductive portion is a conductive trace formed in the insulator.
前述之線路結構中,該第二至第四導電部係為形成於該絕緣體中之導電跡線與導電盲孔。 In the aforementioned circuit structure, the second to fourth conductive portions are conductive traces and conductive blind holes formed in the insulator.
前述之線路結構中,該導電體係為形成於該絕緣體中 之導電盲孔。 In the aforementioned circuit structure, the conductive system is formed in the insulator. Conductive blind hole.
前述之線路結構中,該絕緣體中形成有包含該第一至第三線圈及該第一至第四導電部之第一線路層及第二線路層。 In the aforementioned circuit structure, a first circuit layer and a second circuit layer including the first to third coils and the first to fourth conductive portions are formed in the insulator.
由上可知,本發明之電感組合及其線路結構,主要將三組線圈配合四個導通埠,並藉由任選兩個導通埠作為輸入埠與輸出埠以提供多種電感態樣,且將該電感組合線路化而成為該線路結構之一部分,因而無需增加封裝基板之佈設面積,且不會影響佈線空間,故相較於習知技術,本發明之線路結構不會增加封裝件體積,且不會縮減晶片之電性功能。 As can be seen from the above, the inductor combination and the circuit structure of the present invention mainly include three sets of coils and four conductive ports, and optionally two conductive ports are used as input ports and output ports to provide a variety of inductance patterns, and The combination of inductors becomes a part of the circuit structure, so there is no need to increase the layout area of the packaging substrate, and it will not affect the wiring space. Therefore, compared with the conventional technology, the circuit structure of the present invention does not increase the volume of the package, and Will reduce the electrical functionality of the chip.
1‧‧‧半導體封裝件 1‧‧‧ semiconductor package
10‧‧‧封裝基板 10‧‧‧ package substrate
100‧‧‧電性接觸墊 100‧‧‧electric contact pad
11‧‧‧半導體晶片 11‧‧‧Semiconductor wafer
110‧‧‧銲線 110‧‧‧ welding wire
12‧‧‧被動元件 12‧‧‧ Passive components
13‧‧‧封裝膠體 13‧‧‧ encapsulated colloid
2,4‧‧‧線路結構 2,4‧‧‧line structure
2a‧‧‧電感組合 2a‧‧‧Inductor combination
20‧‧‧絕緣體 20‧‧‧ insulator
20a,20b‧‧‧絕緣層 20a, 20b‧‧‧ Insulation
21‧‧‧第一導通埠 21‧‧‧First port
21a,22a,23a,24a‧‧‧上端面 21a, 22a, 23a, 24a
21b,22b,23b,24b‧‧‧下端面 21b, 22b, 23b, 24b
22‧‧‧第二導通埠 22‧‧‧Second conductive port
23‧‧‧第三導通埠 23‧‧‧Third conductive port
24‧‧‧第四導通埠 24‧‧‧ Fourth port
30,321,331,341‧‧‧導電體 30,321,331,341‧‧‧Conductors
31‧‧‧第一導電部 31‧‧‧The first conductive part
32‧‧‧第二導電部 32‧‧‧ the second conductive part
320,330,340‧‧‧導電跡線 320,330,340‧‧‧ conductive traces
33‧‧‧第三導電部 33‧‧‧ the third conductive part
34‧‧‧第四導電部 34‧‧‧ Fourth conductive section
40‧‧‧第一絕緣材 40‧‧‧First insulating material
40’‧‧‧第二絕緣材 40’‧‧‧second insulating material
40”‧‧‧第三絕緣材 40 ”‧‧‧third insulating material
41‧‧‧第一線路層 41‧‧‧First circuit layer
42‧‧‧第二線路層 42‧‧‧Second circuit layer
420‧‧‧導電盲孔 420‧‧‧Conductive blind hole
43‧‧‧導電柱 43‧‧‧ conductive post
9‧‧‧電路板 9‧‧‧Circuit Board
90‧‧‧銲球 90‧‧‧ solder ball
L1‧‧‧第一線圈 L1‧‧‧First coil
L2‧‧‧第二線圈 L2‧‧‧Second Coil
L3‧‧‧第三線圈 L3‧‧‧Third Coil
L30‧‧‧端部 L30‧‧‧End
S1,S2‧‧‧訊號路徑 S1, S2‧‧‧Signal path
T1,T2,T3‧‧‧厚度 T1, T2, T3‧‧‧thickness
第1圖係為習知半導體封裝件的剖面示意圖;第2A圖係為本發明之電感組合於線路化後之平面示意圖;第2B圖係為對應第2A圖之立體示意圖;第3A圖係為本發明之線路結構之部分剖面示意圖;第3B圖係為本發明之線路結構之另一部分剖面示意圖;以及第4A至4C圖係為本發明之線路結構之製法的剖面示意圖。 Figure 1 is a schematic cross-sectional view of a conventional semiconductor package; Figure 2A is a schematic plan view of the inductor assembly of the present invention after wiring; Figure 2B is a perspective schematic corresponding to Figure 2A; and Figure 3A is Partial cross-sectional schematic diagram of the circuit structure of the present invention; FIG. 3B is a schematic cross-sectional schematic diagram of another part of the circuit structure of the present invention;
以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地 瞭解本發明之其他優點及功效。 The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can easily understand the content disclosed in this specification. Learn about other advantages and effects of the present invention.
須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“第一”、“第二”、“第三”、“上”、“下”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to match the content disclosed in the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The limited conditions are not technically significant. Any modification of the structure, change of the proportional relationship, or adjustment of the size shall still fall within the scope of this invention without affecting the effects and goals that the invention can produce. The technical content disclosed by the invention can be covered. At the same time, the terms such as "first", "second", "third", "up", "down" and "one" cited in this specification are only for the convenience of description, and are not intended to be used. To limit the scope of the present invention that can be implemented, changes or adjustments to its relative relationship, without substantial changes in the technical content, should also be considered as the scope of the present invention that can be implemented.
如第2A、2B、3A及3B圖所示,本發明之線路結構2係包括一絕緣體20及一線路化形成於於該絕緣體20中之電感組合2a,且該電感組合2a係包含第一線圈L1、第二線圈L2、第三線圈L3、第一導通埠21、第二導通埠22、第三導通埠23以及第四導通埠24。 As shown in Figures 2A, 2B, 3A, and 3B, the circuit structure 2 of the present invention includes an insulator 20 and an inductor combination 2a formed in a line in the insulator 20, and the inductor combination 2a includes a first coil. L1, second coil L2, third coil L3, first conductive port 21, second conductive port 22, third conductive port 23, and fourth conductive port 24.
於本實施例中,該線路結構2係可應用於一用以承載晶片之封裝基板上。 In this embodiment, the circuit structure 2 is applicable to a package substrate for carrying a chip.
所述之絕緣體20係包含複數相互堆疊之絕緣層20a,20b。 The insulator 20 includes a plurality of insulating layers 20a, 20b stacked on each other.
所述之第一線圈L1係線路化而成為線路層之導電跡線,並位於該絕緣體20之其中一絕緣層20a(如上層絕緣層)上。 The first coil L1 is lined to become a conductive trace of a circuit layer, and is located on one of the insulating layers 20a (such as an upper insulating layer) of the insulator 20.
所述之第二線圈L2係線路化而成為線路層之導電跡線,並位於該絕緣體20之另一絕緣層20b(如下層絕緣層)上,使該第一線圈L1堆疊於該第二線圈L2上,且該第二線圈L2之其中一端部藉由導電體30連接該第一線圈L1。 The second coil L2 is lined to become a conductive trace of a circuit layer, and is located on another insulating layer 20b of the insulator 20 (as an insulating layer below), so that the first coil L1 is stacked on the second coil. L2, and one end of the second coil L2 is connected to the first coil L1 through a conductor 30.
所述之第三線圈L3係線路化而成為線路層之導電跡線,並與該第二線圈L2位於同一絕緣層20b(如下層)中,且該第三線圈L3之其中一端部L30連接該第二線圈L2。 The third coil L3 is lined to become a conductive trace of a circuit layer, and is located in the same insulating layer 20b (as the lower layer) with the second coil L2, and one end portion L30 of the third coil L3 is connected to the Second coil L2.
所述之第一導通埠21係線路化而成為導電柱,並以其上端面21a藉由第一導電部31(如導電跡線)連接至該第一線圈L1。 The first conductive port 21 is lined to become a conductive pillar, and is connected to the first coil L1 through a first conductive portion 31 (such as a conductive trace) through an upper end surface 21a thereof.
所述之第二導通埠22係線路化而成為導電柱,並以其上端面22a藉由第二導電部32(如導電跡線320與導電體321)連接至該第二線圈L2。 The second conductive port 22 is lined to become a conductive pillar, and is connected to the second coil L2 through a second conductive portion 32 (such as a conductive trace 320 and a conductive body 321) on an upper end surface 22a thereof.
所述之第三導通埠23係線路化而成為導電柱,並以其上端面23a藉由第三導電部33(如導電跡線330與導電體331)連接至該第三線圈L3。 The third conductive port 23 is lined into a conductive pillar, and is connected to the third coil L3 through a third conductive portion 33 (such as the conductive trace 330 and the conductive body 331) on the upper end surface 23a thereof.
所述之第四導通埠24係線路化而成為導電柱,並以其下端面24b藉由第四導電部34(如導電跡線340與導電體341)連接至該第一線圈L1。 The fourth conductive port 24 is circuitized to become a conductive pillar, and is connected to the first coil L1 through a fourth conductive portion 34 (such as a conductive trace 340 and a conductive body 341) on its lower end surface 24b.
於本實施例中,該第一至第四導通埠21,22,23,24之上端面21a,22a,23a,24a與下端面21b,22b,23b,24b係設於絕緣體20中,且位於該第一至第三線圈L1,L2,L3之外圍。 In this embodiment, the upper end faces 21a, 22a, 23a, 24a and the lower end faces 21b, 22b, 23b, 24b of the first to fourth conductive ports 21, 22, 23, 24 are located in the insulator 20 and are located in The periphery of the first to third coils L1, L2, L3.
再者,將該第一導通埠21、第二導通埠22、第三導通埠23及第四導通埠24係依需求選擇其中二者作為訊號輸 入埠與訊號輸出埠,將產生六種電感態樣,例如該第一導通埠21配合該第二導通埠22、該第一導通埠21配合該第三導通埠23、該第一導通埠21配合該第四導通埠24、該第二導通埠22配合該第三導通埠23、該第二導通埠22配合該第四導通埠24、及該第三導通埠23配合該第四導通埠24。具體地,如下所述: In addition, the first conductive port 21, the second conductive port 22, the third conductive port 23, and the fourth conductive port 24 are selected as signal outputs according to requirements. The input port and the signal output port will generate six types of inductance, for example, the first conductive port 21 cooperates with the second conductive port 22, the first conductive port 21 cooperates with the third conductive port 23, and the first conductive port 21 With the fourth conductive port 24, the second conductive port 22 with the third conductive port 23, the second conductive port 22 with the fourth conductive port 24, and the third conductive port 23 with the fourth conductive port 24 . Specifically, as follows:
第一種電感態樣係如第2B、3A及3B圖所示,該第一導通埠21作為訊號輸入埠,且該第二導通埠22作為訊號輸出埠,使該第一線圈L1與第二線圈L2作為電感,其訊號路徑S1之電流係依序為該第一導通埠21、第一導電部31、第一線圈L1、導電體30、第二線圈L2、第二導電部32及該第二導通埠22。應可理解地,該訊號路徑S1之電流反向流動亦可。 The first inductance state is shown in Figures 2B, 3A, and 3B. The first conductive port 21 is used as a signal input port, and the second conductive port 22 is used as a signal output port, so that the first coil L1 and the second coil The coil L2 is used as an inductor, and the current of the signal path S1 is the first conductive port 21, the first conductive portion 31, the first coil L1, the conductor 30, the second coil L2, the second conductive portion 32, and the first conductive port in this order.二 电 通 槽 22。 Two conductive port 22. It should be understood that the current in the signal path S1 may flow in the reverse direction.
第二種電感態樣係如第2B、3A及3B圖所示,該第一導通埠21作為訊號輸入埠,且該第三導通埠23作為訊號輸出埠,使該第一線圈L1、第二線圈L2與第三線圈L3作為電感,其訊號路徑之電流係依序為該第一導通埠21、第一導電部31、第一線圈L1、導電體30、第二線圈L2、第三線圈L3、第三導電部33及該第三導通埠23。應可理解地,該訊號路徑之電流反向流動亦可。 The second inductance state is shown in Figures 2B, 3A, and 3B. The first conductive port 21 is used as a signal input port, and the third conductive port 23 is used as a signal output port. The first coil L1, the second The coil L2 and the third coil L3 serve as inductors, and the currents of the signal paths are in sequence the first conducting port 21, the first conductive portion 31, the first coil L1, the conductor 30, the second coil L2, and the third coil L3. A third conductive portion 33 and the third conductive port 23. It should be understood that the current of the signal path may flow in the reverse direction.
第三種電感態樣係如第2B及3A圖所示,該第一導通埠21作為訊號輸入埠,且該第四導通埠24作為訊號輸出埠,使該第一線圈L1作為電感,其訊號路徑S1之電流係依序為該第一導通埠21、第一導電部31、第一線圈L1、 第四導電部34及該第四導通埠24。應可理解地,該訊號路徑之電流反向流動亦可。 The third type of inductance is shown in Figures 2B and 3A. The first conductive port 21 is used as a signal input port, and the fourth conductive port 24 is used as a signal output port. The first coil L1 is used as an inductor, and its signal The current in the path S1 is the first conductive port 21, the first conductive portion 31, the first coil L1, in this order. The fourth conductive portion 34 and the fourth conductive port 24. It should be understood that the current of the signal path may flow in the reverse direction.
第四種電感態樣係如第2B及3B圖所示,該第二導通埠22作為訊號輸入埠,且該第三導通埠23作為訊號輸出埠,使該第二線圈L2與第三線圈L3作為電感,其訊號路徑S2之電流係依序為該第二導通埠22、第二導電部32、第二線圈L2、第三線圈L3、第三導電部33及第三導通埠23。應可理解地,該訊號路徑S2之電流反向流動亦可。 The fourth type of inductance is shown in Figs. 2B and 3B. The second conductive port 22 is used as a signal input port, and the third conductive port 23 is used as a signal output port, so that the second coil L2 and the third coil L3 are used. As the inductor, the current of its signal path S2 is the second conductive port 22, the second conductive portion 32, the second coil L2, the third coil L3, the third conductive portion 33, and the third conductive port 23 in this order. It should be understood that the current in the signal path S2 may flow reversely.
第五種電感態樣係如第2B、3A及3B圖所示,該第二導通埠22作為訊號輸入埠,且該第四導通埠24作為訊號輸出埠,使該第二線圈L2與第一線圈L1作為電感,其訊號路徑之電流係依序為該第二導通埠22、第二導電部32、第二線圈L2、導電體30、第一線圈L1、第四導電部34及第四導通埠24。應可理解地,該訊號路徑之電流反向流動亦可。 The fifth inductance state is shown in Figures 2B, 3A, and 3B. The second conductive port 22 is used as a signal input port, and the fourth conductive port 24 is used as a signal output port, so that the second coil L2 and the first The coil L1 is used as an inductor, and the current of its signal path is the second conduction port 22, the second conductive portion 32, the second coil L2, the conductor 30, the first coil L1, the fourth conductive portion 34, and the fourth conduction in order. Port 24. It should be understood that the current of the signal path may flow in the reverse direction.
第六種電感態樣係如第2B、3A及3B圖所示,該第三導通埠23作為訊號輸入埠,且該第四導通埠24作為訊號輸出埠,使該第一線圈L1、該第二線圈L2與第三線圈L3作為電感,其訊號路徑之電流係依序為該第三導通埠23、第三導電部33、第三線圈L3、第二線圈L2、導電體30、第一線圈L1、第四導電部34及第四導通埠24。應可理解地,該訊號路徑之電流反向流動亦可。 The sixth inductance state is shown in Figures 2B, 3A, and 3B. The third conductive port 23 is used as a signal input port, and the fourth conductive port 24 is used as a signal output port. The first coil L1, the first The two coils L2 and the third coil L3 serve as inductors, and the currents of their signal paths are in sequence the third conductive port 23, the third conductive portion 33, the third coil L3, the second coil L2, the conductor 30, and the first coil. L1, the fourth conductive portion 34 and the fourth conductive port 24. It should be understood that the current of the signal path may flow in the reverse direction.
又,本發明之線路結構2可於製作例如為具有核心層之封裝基板或無核心層(coreless)封裝基板時,藉由兩層 重佈線路層(redistribution layer,簡稱RDL)製程製作。 In addition, the circuit structure 2 of the present invention can be used, for example, to produce a package substrate with a core layer or a coreless package substrate by using two layers. Redistribution layer (RDL) manufacturing process.
具體地,如第4A圖所示,於一承載件(圖略)上形成第一絕緣材40,並於該第一絕緣材40上形成第一線路層41;接著,如第4B圖所示,於該第一絕緣材40與該第一線路層41上形成第二絕緣材40’,且於該第二絕緣材40’中形成複數導電盲孔420,再於該第二絕緣材40’與導電盲孔420上形成第二線路層42,並於該第二絕緣材40’與該第二線路層42上形成第三絕緣材40”;之後,如第4C圖所示,於該第一至第三絕緣材40,40’,40”中形成複數導電柱43,再移除該承載件,以獲得線路結構4。 Specifically, as shown in FIG. 4A, a first insulating material 40 is formed on a carrier (not shown), and a first circuit layer 41 is formed on the first insulating material 40; then, as shown in FIG. 4B A second insulating material 40 'is formed on the first insulating material 40 and the first circuit layer 41, a plurality of conductive blind holes 420 are formed in the second insulating material 40', and then the second insulating material 40 'is formed. A second circuit layer 42 is formed on the conductive blind hole 420, and a third insulating material 40 "is formed on the second insulating material 40 'and the second circuit layer 42. Then, as shown in FIG. 4C, A plurality of conductive pillars 43 are formed in the first to third insulating materials 40, 40 ′, 40 ″, and the carrier is removed to obtain the circuit structure 4.
所述之第一絕緣材40係可例如為第3A圖所示之絕緣體20之下層絕緣層20b。 The first insulating material 40 may be, for example, an insulating layer 20b under the insulator 20 shown in FIG. 3A.
所述之第二絕緣材40’係可例如為第3A圖所示之絕緣體20之上層絕緣層20a。 The second insulating material 40 'may be, for example, an insulating layer 20a on the insulator 20 shown in FIG. 3A.
所述之第三絕緣材40”係可作為第3A圖所示之絕緣體20之其它部分。 The third insulating material 40 ″ can be used as other parts of the insulator 20 shown in FIG. 3A.
於本實施例中,該第三絕緣材40”之厚度T3係大於該第一絕緣材40之厚度T1,且第一絕緣材40之厚度T1大於該第二絕緣材40’之厚度T2。 In this embodiment, the thickness T3 of the third insulating material 40 "is greater than the thickness T1 of the first insulating material 40, and the thickness T1 of the first insulating material 40 is greater than the thickness T2 of the second insulating material 40 '.
再者,形成該第一至第三絕緣材40,40’,40”之材質可為無機材質(如二氧化矽、氮化矽、氧化鋁、碳化矽、GaAs、GaP等)或有機材質(如介電材)。 Furthermore, the materials forming the first to third insulating materials 40, 40 ', 40 "may be inorganic materials (such as silicon dioxide, silicon nitride, aluminum oxide, silicon carbide, GaAs, GaP, etc.) or organic materials ( (Such as dielectric).
所述之第一線路層41係可包含第二線圈L2、第三線圈L3及第四導電部34之導電跡線340。 The first circuit layer 41 may include conductive traces 340 of the second coil L2, the third coil L3, and the fourth conductive portion 34.
所述之第二線路層42係可包含第一線圈L1、第一導電部31、第二導電部32之導電跡線320及第三導電部33之導電跡線330。 The second circuit layer 42 may include the first coil L1, the first conductive portion 31, the conductive trace 320 of the second conductive portion 32, and the conductive trace 330 of the third conductive portion 33.
所述之導電盲孔420係可包含導電體30、第二導電部32之導電體321、第三導電部33之導電體331及第四導電部34之導電體341。 The conductive blind hole 420 may include a conductive body 30, a conductive body 321 of the second conductive portion 32, a conductive body 331 of the third conductive portion 33, and a conductive body 341 of the fourth conductive portion 34.
所述之導電柱43係可包含第一導通埠21、第二導通埠22、第三導通埠23及第四導通埠24。 The conductive pillar 43 may include a first conductive port 21, a second conductive port 22, a third conductive port 23, and a fourth conductive port 24.
於本實施例中,該導電柱43可作為訊號輸入埠(如第一導通埠21、第二導通埠22、第三導通埠23或第四導通埠24),並連接基板之線路(如第1圖所示之封裝基板10之電性接觸墊100),以接收來自晶片(如第1圖所示之半導體晶片11)的訊號,且該導電柱43亦可作為訊號輸出埠(如第一導通埠21、第二導通埠22、第三導通埠23或第四導通埠24),並可與基板上的線路連接,以將訊號輸出至外部元件(如第1圖所示之電路板9)。 In this embodiment, the conductive post 43 can be used as a signal input port (such as the first conductive port 21, the second conductive port 22, the third conductive port 23, or the fourth conductive port 24), and connected to the circuit of the substrate (such as The electrical contact pad 100 of the package substrate 10 shown in FIG. 1) is used to receive signals from the chip (such as the semiconductor wafer 11 shown in FIG. 1), and the conductive pillar 43 can also be used as a signal output port (such as the first Conductive port 21, second conductive port 22, third conductive port 23, or fourth conductive port 24), and can be connected to the circuit on the substrate to output signals to external components (such as the circuit board 9 shown in FIG. 1) ).
綜上所述,本發明之線路結構2,4及電感組合2a,係藉由任選兩個導通埠(如該第一導通埠21、第二導通埠22、第三導通埠23及第四導通埠24之其中二者)作為輸入埠與輸出埠以提供多種電感態樣(如六種電感值),且將該電感組合2a線路化而成為該線路結構2,4之一部分,因而無需增加封裝基板之佈設面積,且不會影響佈線空間,故相較於習知技術,本發明之線路結構2,4不會增加封裝件體積,且不會縮減晶片之電性功能,並能依需求選擇電 感組合2a中之Q值(quality factor,品質因數)以配合晶片之電性功能。 In summary, the circuit structure 2, 4 and the inductor combination 2a of the present invention are made by selecting two conductive ports (such as the first conductive port 21, the second conductive port 22, the third conductive port 23, and the fourth conductive port). Two of the conducting ports 24) are used as input ports and output ports to provide various inductance states (such as six inductance values), and the inductance combination 2a is lined into a part of the line structure 2,4, so there is no need to increase The layout area of the package substrate does not affect the wiring space. Compared with the conventional technology, the circuit structure 2, 4 of the present invention does not increase the volume of the package, and does not reduce the electrical functions of the chip. Select electricity The Q value (quality factor) in the sensory combination 2a is matched with the electrical function of the chip.
上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are used to exemplify the principle of the present invention and its effects, but not to limit the present invention. Anyone skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention should be listed in the scope of patent application described later.
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