TWI638912B - Copper electroplating solution, method for copper electroplating and method for forming copper pillars - Google Patents
Copper electroplating solution, method for copper electroplating and method for forming copper pillars Download PDFInfo
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Abstract
本發明涉及一種銅電鍍液、電鍍銅的方法及形成銅柱的方法。銅電鍍液的特徵是利用分子量20000的聚乙二醇作為抑制劑,並且對聚乙二醇及二硫二丙烷磺酸鹽的濃度作最佳化。利用所述銅電鍍液進行電鍍時,可在高電流密度下在基板上形成光亮似鏡的銅膜層。同樣地,利用所述銅電鍍液在基板上形成銅柱時,可以改善銅柱的品質。The present invention relates to a copper plating bath, a method of electroplating copper, and a method of forming a copper pillar. The copper plating bath is characterized by using polyethylene glycol having a molecular weight of 20,000 as an inhibitor and optimizing the concentration of polyethylene glycol and dithiodipropane sulfonate. When electroplating is performed using the copper plating solution, a bright mirror-like copper film layer can be formed on the substrate at a high current density. Similarly, when the copper plating solution is formed on the substrate by the copper plating solution, the quality of the copper column can be improved.
Description
本發明涉及一種電鍍液,且特別涉及一種銅電鍍液、利用該銅電鍍液進行電鍍銅的方法、以及利用該銅電鍍液在基板上形成銅柱的方法。The present invention relates to a plating solution, and more particularly to a copper plating solution, a method of performing copper plating using the copper plating solution, and a method of forming a copper pillar on a substrate using the copper plating solution.
電鍍銅的技術被廣泛用於製造超大積體電路(ultra-large-scale integration, ULSI)的半導體設備及印刷電路板(printed circuit boards, PCBs)的銅柱或線路。Electroplated copper technology is widely used to fabricate ultra-large-scale integration (ULSI) semiconductor devices and copper columns or traces of printed circuit boards (PCBs).
傳統的多層PCBs受限於其封裝密度,並無法符合先進產品的趨勢。為了增加封裝密度,利用微凸塊連接兩導電層的高密度連接(high-density interconnection, HDI)設計是不可或缺的。近年來,由於銅柱在良好的間距、細間距能力及低電阻上有著優越的性能,因此透過電鍍銅形成銅柱並且作為連接材料受到了相當的矚目。Traditional multilayer PCBs are limited by their package density and do not meet the trend of advanced products. In order to increase the packing density, a high-density interconnection (HDI) design using microbumps to connect two conductive layers is indispensable. In recent years, since copper pillars have superior performance in terms of good pitch, fine pitch capability, and low electrical resistance, copper pillars are formed by electroplating copper and have attracted considerable attention as a connecting material.
用於雙鑲嵌製程的銅電鍍液通常包含CuSO 4、H 2SO 4、Cl -離子及不同類型的有機添加劑等物質,以達成銅對於高縱橫比通孔的完美填充沉積。一般用來完成「超填充」(superfilling)的傳統有機添加劑包含抑制劑、加速劑及流平劑。 Copper plating baths for dual damascene processes typically contain CuSO 4 , H 2 SO 4 , Cl - ions, and various types of organic additives to achieve perfect fill deposition of copper for high aspect ratio vias. Conventional organic additives commonly used to accomplish "superfilling" include inhibitors, accelerators, and leveling agents.
分子量在4000~8000之間的聚乙二醇(Polyethylene glycol, PEG)是一般用作為抑制劑的界面活性劑。許多研究報導指出PEG的抑制效果在Cl -離子的存在下有顯著增加,這主要是涉及Cu +、PEG及Cl -之間的協同作用。使用分子量小的PEG主要是在溶液中移動速度較快,有高的質傳效果,以將Cu +較快地帶往電極以產生電鍍反應。一般的加速劑包括3-巰基-1-丙磺酸鹽(3-mercapto-1-propanesulfonate, MPS)或二硫二丙烷磺酸鹽(bis(3-sulfopropyl) disulfide, SPS),加速劑可改變在表面的電荷轉移過程,進而增加銅的沉積速率。流平劑,例如具有含氮芳香環官能基之健那綠B(Janus Green B, JGB)或苯並三唑,用以增加過電位(overpotential)並且抑制銅的沉積。 Polyethylene glycol (PEG) having a molecular weight of between 4,000 and 8,000 is a surfactant generally used as an inhibitor. Many studies have reported that the inhibitory effect of PEG is significantly increased in the presence of Cl - ion, which is mainly related to the synergy between Cu + , PEG and Cl - . The use of PEG with a small molecular weight mainly moves faster in solution and has a high quality transfer effect, so that Cu + is quickly carried to the electrode to generate an electroplating reaction. Typical accelerators include 3-mercapto-1-propanesulfonate (MPS) or bis(3-sulfopropyl) disulfide (SPS). Accelerators can be changed. The charge transfer process at the surface, in turn, increases the rate of copper deposition. A leveling agent, such as Janus Green B (JGB) or benzotriazole having a nitrogen-containing aromatic ring functional group, is used to increase overpotential and inhibit copper deposition.
進一步地透過電鍍形成銅柱時,具有平坦頂部的銅柱能夠明顯減少化學機械研磨(chemical mechanical polishing, CMP)的時間,進而降低製造成本,也有助於後端產品的良率。然而,現有技術已嘗試不同的添加劑用於形成銅柱的效果,但是能夠用於工業生產的合適濃度仍尚未明瞭。此外,若施加高電流密度以欲提高電鍍速率時,所形成的銅柱其頂部通常會產生傾斜或凹坑,並且生長不可控的節瘤。Further, when a copper pillar is formed by electroplating, the copper pillar having a flat top can significantly reduce the time of chemical mechanical polishing (CMP), thereby reducing the manufacturing cost and contributing to the yield of the back end product. However, the prior art has attempted the effect of different additives for forming copper pillars, but the suitable concentration that can be used for industrial production is still unclear. In addition, if a high current density is applied to increase the plating rate, the formed copper pillar usually has a slope or a pit at the top thereof, and grows an uncontrollable nodule.
為了得到平坦頂部的銅柱並且防止節瘤的生長,傳統方法通常是一步一步地逐漸增加電鍍銅的電流密度。然而,這種方法卻會增加電鍍的時間。In order to obtain a flat top copper pillar and prevent the growth of nodules, the conventional method generally gradually increases the current density of the electroplated copper step by step. However, this method will increase the plating time.
此外,先前技術中,尚未有透過縮小銅晶粒以改善電鍍效果的相關文獻。Further, in the prior art, there has not been a related literature that reduces the copper crystal grain to improve the plating effect.
本發明之目的在於提供一種銅電鍍液、電鍍銅的方法以及形成銅柱的方法。相較於傳統的銅電鍍液,本發明即使在提高的電流密度下,仍可具有良好的電鍍品質。即,可縮短電鍍時間的同時亦可抑制銅的表面產生節瘤。It is an object of the present invention to provide a copper plating solution, a method of electroplating copper, and a method of forming a copper pillar. Compared with the conventional copper plating solution, the present invention can have good plating quality even at an increased current density. That is, it is possible to suppress the occurrence of the nodules on the surface of the copper while shortening the plating time.
本發明之另一目的在於提供一種銅電鍍液、電鍍銅的方法以及形成銅柱的方法,可改善銅的表面的形貌。Another object of the present invention is to provide a copper plating solution, a method of electroplating copper, and a method of forming a copper pillar, which can improve the surface topography of copper.
本發明之再一目的在於提供一種銅電鍍液、電鍍銅的方法以及形成銅柱的方法,可控制電鍍所形成的銅晶粒尺寸,以更進一步改善電鍍的品質。It is still another object of the present invention to provide a copper plating solution, a method of electroplating copper, and a method of forming a copper pillar, which can control the size of the copper crystal grains formed by electroplating to further improve the quality of electroplating.
根據本發明的實施例,銅電鍍液包含的物質組成為1.2×10 5~1.8×10 5ppm的五水硫酸銅、9.8×10 4~1.372×10 5ppm的硫酸、50~70 ppm的氯離子、3~12 ppm的二硫二丙烷磺酸鹽、240~780 ppm的聚乙二醇以及健那綠B,其中,該聚乙二醇的分子量為20000,且該健那綠B:該聚乙二醇的濃度比為1:40000。 According to an embodiment of the present invention, the copper plating solution comprises a substance composition of 1.2×10 5 to 1.8×10 5 ppm of copper sulfate pentahydrate, 9.8×10 4 to 1.372×10 5 ppm of sulfuric acid, and 50 to 70 ppm of chlorine. Ionic, 3-12 ppm dithiodipropane sulfonate, 240-780 ppm polyethylene glycol, and Jianna Green B, wherein the polyethylene glycol has a molecular weight of 20,000, and the Jianna green B: The concentration ratio of polyethylene glycol is 1:40000.
較佳地,該二硫二丙烷磺酸鹽的濃度進一步為6~12 ppm。Preferably, the concentration of the dithiodipropane sulfonate is further from 6 to 12 ppm.
較佳地,該聚乙二醇的濃度進一步為420~600 ppm。Preferably, the concentration of the polyethylene glycol is further from 420 to 600 ppm.
根據本發明的另一實施例,電鍍銅的方法的步驟包含:提供一基板當作一工作電極並且提供一對電極,該工作電極及該對電極浸泡於一銅電鍍液中;對該工作電極及該對電極施加一恆定電流,在施加該恆定電流的過程中擾動該銅電鍍液,其中,所使用的銅電鍍液為本發明前述之銅電鍍液。According to another embodiment of the present invention, a method of electroplating copper includes: providing a substrate as a working electrode and providing a pair of electrodes, the working electrode and the pair of electrodes being immersed in a copper plating solution; the working electrode And applying a constant current to the pair of electrodes, the copper plating solution is disturbed during the application of the constant current, wherein the copper plating solution used is the copper plating solution described above.
較佳地,該基板的材料包括銅。Preferably, the material of the substrate comprises copper.
較佳地,該恆定電流的電流密度為5 A·dm -2~9 A·dm -2。 Preferably, the constant current has a current density of 5 A·dm -2 to 9 A·dm -2 .
較佳地,該恆定電流的電流密度為7.5 A·dm -2以下。 Preferably, the current density of the constant current is 7.5 A·dm -2 or less.
較佳地,擾動該銅電鍍液的擾動速率為150 rpm以下。Preferably, the disturbance rate of disturbing the copper plating solution is 150 rpm or less.
較佳地,擾動該銅電鍍液產生的擾流方向與該工作電極的表面呈10~80度的夾角。Preferably, the disturbing flow direction generated by the copper plating solution is at an angle of 10 to 80 degrees with the surface of the working electrode.
根據本發明的再一實施例,形成銅柱的方法的步驟包含:提供一基板當作一工作電極並且提供一對電極,該工作電極及該對電極浸泡於一銅電鍍液中,其中該基板上形成具有一通孔的一遮罩;對該工作電極及該對電極施加一恆定電流以將銅沉積於該通孔中,在施加該恆定電流的過程中擾動該銅電鍍液;以及移除該遮罩,藉此在該基板上形成一銅柱,其中,所使用的銅電鍍液為本發明前述之銅電鍍液。According to still another embodiment of the present invention, a method of forming a copper pillar includes: providing a substrate as a working electrode and providing a pair of electrodes, the working electrode and the pair of electrodes being immersed in a copper plating solution, wherein the substrate Forming a mask having a through hole; applying a constant current to the working electrode and the pair of electrodes to deposit copper in the through hole, disturbing the copper plating solution during application of the constant current; and removing the A mask is formed thereby forming a copper pillar on the substrate, wherein the copper plating solution used is the copper plating solution described above.
以下,伴隨圖1來說明本發明電鍍銅的方法。Hereinafter, a method of electroplating copper of the present invention will be described with reference to FIG.
首先,進行提供銅電鍍液的步驟S101。銅電鍍液中的成分可包含五水硫酸銅(CuSO 4·5H 2O,例如購自於Sigma-Aldrich)、硫酸(H 2SO 4,例如購自於Merck)、氯離子(Cl -,其離子由鹽酸(HCl)供應,鹽酸例如購自於Merck)、二硫二丙烷磺酸鹽(SPS,例如購自於Carbosynth)、聚乙二醇(PEG,例如購自於Alfa Aesar)以及健那綠B(JGB,例如購自於Alfa Aesar)等。 First, a step S101 of providing a copper plating solution is performed. The components in the copper plating bath may comprise copper sulfate pentahydrate (CuSO 4 ·5H 2 O, such as from Sigma-Aldrich), sulfuric acid (H 2 SO 4 , such as from Merck), chloride ion (Cl - , The ions are supplied by hydrochloric acid (HCl), for example, from Merck, dithiodipropane sulfonate (SPS, for example, from Carbosynth), polyethylene glycol (PEG, for example, from Alfa Aesar), and Jianna. Green B (JGB, for example, purchased from Alfa Aesar).
CuSO 4·5H 2O的濃度可根據需要而不受限制,但濃度較佳為1.2×10 5~1.8×10 5ppm。H 2SO 4的濃度可根據需要而不受限制,但濃度較佳為9.8×10 4~1.372×10 5ppm。Cl -的濃度可根據需要而不受限制,但濃度較佳為50~70 ppm。 The concentration of CuSO 4 ·5H 2 O may be not limited as needed, but the concentration is preferably from 1.2 × 10 5 to 1.8 × 10 5 ppm. The concentration of H 2 SO 4 may be not limited as needed, but the concentration is preferably 9.8 × 10 4 to 1.372 × 10 5 ppm. The concentration of Cl - may be unlimited as needed, but the concentration is preferably from 50 to 70 ppm.
作為加速劑,SPS的濃度可為3~12 ppm,較佳為6~12 ppm,更佳為6~9 ppm。作為抑制劑,PEG選用的分子量可為20000(即,PEG 20000)。PEG 20000的濃度可為240~780 ppm,較佳為420~780 ppm,更佳為420~600 ppm。作為流平劑,只要JBG:PEG的濃度比為1:40000,則JGB可為根據需要的濃度。As the accelerator, the concentration of SPS may be 3 to 12 ppm, preferably 6 to 12 ppm, more preferably 6 to 9 ppm. As an inhibitor, PEG may have a molecular weight of 20,000 (i.e., PEG 20000). The concentration of PEG 20000 may range from 240 to 780 ppm, preferably from 420 to 780 ppm, more preferably from 420 to 600 ppm. As the leveling agent, as long as the concentration ratio of JBG:PEG is 1:40000, the JGB may be a concentration as needed.
以上所指出的濃度皆為物質在銅電鍍液中的濃度。The concentrations indicated above are the concentrations of the substance in the copper plating bath.
接著進行步驟S102,提供基板作為工作電極並且提供對電極,然後將工作電極與對電極浸泡於電鍍設備的銅電鍍液中。Next, in step S102, a substrate is provided as a working electrode and a counter electrode is provided, and then the working electrode and the counter electrode are immersed in a copper plating solution of the electroplating apparatus.
作為工作電極的基板,例如可選用以碳化矽(SiC)砂紙拋光並以去離子(deionized, DI)水清洗後的塊材銅(純度:99%,50 mm × 50 mm × 1.5 mm),而對電極則可選用鉑(Pt)線圈。在電鍍設備中,工作電極與對電極彼此之間的距離可根據需要而不受限制,例如距離可為2.5 cm。As the substrate of the working electrode, for example, bulk copper (purity: 99%, 50 mm × 50 mm × 1.5 mm) which is polished with tantalum carbide (SiC) sandpaper and cleaned with deionized (DI) water, For the counter electrode, a platinum (Pt) coil can be used. In the electroplating apparatus, the distance between the working electrode and the counter electrode from each other can be unrestricted as needed, for example, the distance can be 2.5 cm.
接著進行步驟S103,對工作電極及對電極施加恆定電流,並在施加恆定電流的過程中擾動銅電鍍液,以開始在工作電極的表面沉積金屬銅而形成銅膜層。在本實施例中,恆定電流的電流密度可根據需要的電鍍速率,較佳為5~9 A·dm -2,更加為5~7.5 A·dm -2。此外,擾動銅電鍍液主要是為了產生擾流,以讓銅電鍍液的成分流向工作電極,而擾動的速率較佳可為150 rpm以下。擾流的方向可不與工作電極的表面垂直而形成預定角度的夾角,該預定角度可為10~80度,例如可為45度。 Next, in step S103, a constant current is applied to the working electrode and the counter electrode, and the copper plating solution is disturbed during the application of the constant current to start depositing metallic copper on the surface of the working electrode to form a copper film layer. In the present embodiment, the current density of the constant current may be preferably 5 to 9 A·dm -2 , more preferably 5 to 7.5 A·dm -2 , depending on the plating rate required. In addition, the disturbing copper plating solution is mainly for generating a turbulence to allow the composition of the copper plating solution to flow to the working electrode, and the disturbance rate is preferably 150 rpm or less. The direction of the spoiler may not be perpendicular to the surface of the working electrode to form an angle of a predetermined angle, which may be 10 to 80 degrees, for example, 45 degrees.
完成S103後,則可得到在工作電極的表面上形成銅膜層的成品,於是完成銅電鍍。藉由上述的銅電鍍液進行電鍍,可縮短電鍍的時間,抑制銅膜層的表面產生節瘤,改善銅膜層表面的形貌,還可控制銅膜層中的銅晶粒尺寸。After completion of S103, a finished product in which a copper film layer is formed on the surface of the working electrode is obtained, and copper plating is completed. Electroplating by the above copper plating solution can shorten the plating time, suppress the occurrence of nodules on the surface of the copper film layer, improve the surface morphology of the copper film layer, and control the copper grain size in the copper film layer.
進一步,根據圖2所示來說明形成銅柱的方法。Further, a method of forming a copper pillar will be described based on FIG.
首先,進行提供銅電鍍液的步驟S201,銅電鍍液的組成與上述步驟S101所述的組成完全相同。First, in step S201 of providing a copper plating solution, the composition of the copper plating solution is completely the same as that described in the above step S101.
接著,進行步驟S202,提供基板當作工作電極並提供對電極,將工作電極及對電極浸泡於銅電鍍液中,其中基板上形成具有通孔的遮罩。Next, in step S202, the substrate is provided as a working electrode and a counter electrode is provided, and the working electrode and the counter electrode are immersed in a copper plating solution, wherein a mask having a through hole is formed on the substrate.
作為工作電極的基板,可為如步驟S101中所述的塊材銅。The substrate as the working electrode may be a bulk copper as described in step S101.
形成具有通孔的遮罩的方式可根據需要而不受限制,例如可透過光微影蝕刻的方式形成具有通孔的光阻層。The manner of forming the mask having the through holes can be unrestricted as needed, for example, a photoresist layer having through holes can be formed by photolithography.
此外,形成有遮罩的基板的來源可為市售產品,例如可為具有通孔圖案的PCB板。Further, the source of the substrate on which the mask is formed may be a commercially available product, for example, a PCB board having a through hole pattern.
接著,進行步驟S203,對工作電極及對電極施加恆定電流,在施加恆定電流的過程中擾動銅電鍍液,以開始在通孔內沉積金屬銅。Next, in step S203, a constant current is applied to the working electrode and the counter electrode, and the copper plating solution is disturbed during the application of the constant current to start depositing metallic copper in the through hole.
恆定電流的電流密度、擾動銅電鍍液的速率及擾動所產生的擾流方向皆與步驟S102完全相同。The current density of the constant current, the rate of disturbing the copper plating solution, and the direction of the disturbance generated by the disturbance are all the same as in step S102.
接著,進行步驟S204,電鍍完成後移除遮罩。Next, step S204 is performed, and the mask is removed after the plating is completed.
移除遮罩的方式可根據需要而不受限制,例如可透過不蝕刻金屬的蝕刻液來移除光阻圖案。The manner in which the mask is removed may be unrestricted as needed, for example, the photoresist pattern may be removed by an etching solution that does not etch the metal.
完成步驟S204後,則可得到在工作電極的表面形成銅柱的成品,於是完成形成銅柱的方法。藉由上述的銅電鍍液來形成銅柱,可縮短電鍍的時間,抑制銅柱的頂部產生節瘤,改善銅柱的頂部形貌,還可控制銅柱中的銅晶粒尺寸。After the completion of step S204, a finished product in which a copper pillar is formed on the surface of the working electrode is obtained, and thus a method of forming a copper pillar is completed. By forming the copper pillar by the above copper plating solution, the plating time can be shortened, the nodules on the top of the copper pillar can be suppressed, the topography of the copper pillar can be improved, and the copper grain size in the copper pillar can be controlled.
以下,透過實施例來詳細說明本發明的銅電鍍液、電鍍銅的方法及形成銅柱的方法。Hereinafter, a copper plating solution, a method of plating copper, and a method of forming a copper column of the present invention will be described in detail by way of examples.
[實施例1][Example 1]
伴隨圖1並參照表1(整理於說明書最後)的濃度提供銅電鍍液,並且將準備好的銅電鍍液中置於電鍍設備的電鍍槽中(步驟S101)。銅電鍍液包含以下濃度的物質組成: 1.2×10 5ppm的CuSO 4·5H 2O; 1.176×10 5ppm的H 2SO 4; 60 ppm的Cl -; 6 ppm的SPS; 240 ppm的PEG 20000;以及 JGB,使JGB:PEG 20000的濃度比為1:40000。 A copper plating solution is supplied with the concentration of FIG. 1 and with reference to Table 1 (finished at the end of the specification), and the prepared copper plating solution is placed in a plating bath of the plating apparatus (step S101). The copper plating bath consists of the following concentrations: 1.2 × 10 5 ppm CuSO 4 · 5H 2 O; 1.176 × 10 5 ppm H 2 SO 4 ; 60 ppm Cl - ; 6 ppm SPS; 240 ppm PEG 20000 And JGB, the concentration ratio of JGB:PEG 20000 is 1:40000.
為了方便接下來的電鍍期間觀察到SPS及PEG對電鍍電位的影響,進而了解它們在電鍍中的角色。因此,在本實施例中,PEG 20000及SPS是在施加電流時才依序加入。而在其他的實施例中,SPS及PEG 20000是在電鍍前就已經加入銅電鍍液當中。In order to facilitate the influence of SPS and PEG on the plating potential during the subsequent plating, the role of them in electroplating is understood. Therefore, in the present embodiment, PEG 20000 and SPS are sequentially added when an electric current is applied. In other embodiments, SPS and PEG 20000 have been added to the copper plating bath prior to plating.
接著,將經過拋光及清洗處理的塊材銅(純度:99%,50 mm × 50 mm × 1.5 mm)及Pt線圈置入準備好的電鍍槽中,浸泡於銅電鍍液中。將塊材銅及Pt線圈分別作為工作電極及對電極,兩者的間隔距離為2.5 cm(步驟S102)。Next, the polished and cleaned bulk copper (purity: 99%, 50 mm × 50 mm × 1.5 mm) and the Pt coil were placed in a prepared plating bath and immersed in a copper plating solution. The bulk copper and the Pt coil were respectively used as the working electrode and the counter electrode, and the distance between them was 2.5 cm (step S102).
接著,對兩電極施加5 A·dm -2的恆定電流密度5分鐘以開始進行電鍍。在電鍍的期間,同時以150 rpm的速率擾動銅電鍍液,且所產生的擾流方向與塊材銅的表面呈45度角(步驟S103)。 Next, a constant current density of 5 A·dm -2 was applied to both electrodes for 5 minutes to start plating. During the electroplating, the copper plating solution was simultaneously disturbed at a rate of 150 rpm, and the generated spoiler direction was at an angle of 45 degrees to the surface of the bulk copper (step S103).
電鍍的期間同時觀察加入SPS及PEG對電鍍電位的影響。電位與電鍍時間的關係圖如圖3所示。During the electroplating period, the effects of adding SPS and PEG on the plating potential were observed. The relationship between potential and plating time is shown in Figure 3.
經由上述步驟,於是在塊材銅的表面上沉積一層銅膜層。藉由直接觀察法來觀察銅膜層在巨觀上的表面狀態,並藉由場發掃描式電子顯微鏡(FE-SEM; JEOL JSM-6700F,操作電壓3 kv)來觀察銅膜層在微觀狀態的表面形貌以及銅晶粒的結晶大小。觀察結果如圖4、圖5所示,其將在後面作進一步詳述。Through the above steps, a copper film layer is deposited on the surface of the bulk copper. The surface state of the copper film on the macroscopic view was observed by direct observation, and the copper film layer was observed in the microscopic state by field scanning electron microscopy (FE-SEM; JEOL JSM-6700F, operating voltage 3 kv). Surface morphology and crystal size of copper grains. The observation results are shown in Fig. 4 and Fig. 5, which will be described in further detail later.
[實施例2-16][Embodiment 2-16]
如同實施例1相同的方法進行電鍍,差異在於SPS和PEG 20000的添加濃度如表1所示。電鍍完成後,銅膜層表面的觀察結果同樣呈現在圖4、圖5中。Electroplating was carried out in the same manner as in Example 1 except that the added concentrations of SPS and PEG 20000 are shown in Table 1. After the electroplating is completed, the observation results of the surface of the copper film layer are also shown in Figs. 4 and 5.
[實施例17][Example 17]
如同實施例1相同的方法進行電鍍,差異在於SPS和PEG 20000的濃度,以及電流密度如表1所示。電鍍完成後,銅膜層表面的觀察結果呈現圖6、圖7中。Electroplating was carried out in the same manner as in Example 1, except that the concentrations of SPS and PEG 20000, and the current densities are shown in Table 1. After the electroplating is completed, the observation results of the surface of the copper film layer are shown in Figs. 6 and 7.
[實施例18-19][Examples 18-19]
如同實施例1相同的方法進行電鍍,差異在於SPS和PEG 20000的濃度、電流密度以及擾動速率如表1所示。電鍍完成後,銅膜層表面的SEM影像如圖7所示。Electroplating was carried out in the same manner as in Example 1 except that the concentrations, current densities, and disturbance rates of SPS and PEG 20000 are shown in Table 1. After the electroplating is completed, the SEM image of the surface of the copper film layer is as shown in FIG.
[實施例20][Example 20]
透過本實施例伴隨圖2來說明本發明形成銅柱的方法。A method of forming a copper post of the present invention will be described with reference to Fig. 2 through this embodiment.
首先,提供根據表2(整理於說明書最後)所示的SPS及PEG 20000濃度配製銅電鍍液,並且將準備好的銅電鍍液中置於電鍍設備的電鍍槽中(步驟S201),銅電鍍液包含以下的濃度組成: 1.2×10 5ppm的CuSO 4·5H 2O; 1.176×10 5ppm的H 2SO 4; 60 ppm的Cl -; 9 ppm的SPS; 600 ppm的PEG 20000;以及 JGB,使JGB:PEG 20000的濃度比為1:40000。 First, a copper plating solution is prepared according to the SPS and PEG 20000 concentrations shown in Table 2 (finished at the end of the specification), and the prepared copper plating solution is placed in a plating tank of the plating apparatus (step S201), the copper plating solution Contains the following concentration composition: 1.2 × 10 5 ppm CuSO 4 · 5H 2 O; 1.176 × 10 5 ppm H 2 SO 4 ; 60 ppm Cl - ; 9 ppm SPS; 600 ppm PEG 20000; and JGB, The concentration ratio of JGB:PEG 20000 was 1:40000.
接著,將PCB板(具有直徑120 μm、深170 μm的通孔圖案遮罩)及Pt線圈置入準備好的電鍍槽中,浸泡於銅電鍍液中(步驟S202)。將PCB板及Pt線圈分別作為工作電極及對電極,兩者的間隔距離為2.5 cm。Next, a PCB board (having a through-hole pattern mask having a diameter of 120 μm and a depth of 170 μm) and a Pt coil were placed in the prepared plating bath and immersed in the copper plating solution (step S202). The PCB board and the Pt coil are respectively used as the working electrode and the counter electrode, and the distance between them is 2.5 cm.
接著,對兩電極施加7.5 A·dm -2的恆定電流密度5分鐘以開始進行電鍍。在電鍍的期間,同時以60 rpm的速率擾動銅電鍍液,且所產生的擾流方向與塊材銅的表面呈45度角(步驟S203)。 Next, a constant current density of 7.5 A·dm -2 was applied to both electrodes for 5 minutes to start plating. During the electroplating, the copper plating solution was simultaneously disturbed at a rate of 60 rpm, and the generated spoiler direction was at an angle of 45 degrees to the surface of the bulk copper (step S203).
電鍍完成後,利用不蝕刻銅的蝕刻液,移除遮罩部分,以得到在PCB板上形成的銅柱(步驟S204)。透過SEM觀察銅柱的結構,其結果呈現在圖9的SEM影像中。After the plating is completed, the mask portion is removed using an etching solution that does not etch copper to obtain a copper pillar formed on the PCB (step S204). The structure of the copper pillar was observed by SEM, and the results were shown in the SEM image of FIG.
[實施例21][Example 21]
如同實施例20相同的方法進行電鍍,如表2所示,其差異僅在於電流密度提高至9 A·dm -2。 Electroplating was carried out in the same manner as in Example 20, as shown in Table 2, except that the current density was increased to 9 A·dm -2 .
[實驗結果][Experimental results]
圖3為在電鍍期間電位與反應時間的曲線圖,用以說明利用圖1之電鍍銅的方法時,依序加入240 ppm PEG 20000及6 ppm SPS後電位與反應時間的對應關係。Figure 3 is a graph of potential versus reaction time during electroplating to illustrate the relationship between potential and reaction time after 240 ppm of PEG 20000 and 6 ppm SPS were sequentially added using the method of electroplating copper of Figure 1.
如圖3所示,當PEG 20000注入銅電鍍液中時,電位迅速地朝負電位偏移後維持在穩定狀態。然後,當SPS加入銅電鍍液時電位則朝正電位偏移。根據此電位上的變化可歸納出PEG 20000具有抑制效果且SPS具有加速效果。當電位呈現在穩定狀態,其代表電流密度固定,於是電鍍反應穩定地發生在塊材銅的表面,進而形成表面平整的銅膜層。As shown in FIG. 3, when PEG 20000 was injected into the copper plating solution, the potential was rapidly shifted toward the negative potential and maintained in a stable state. Then, when the SPS is added to the copper plating solution, the potential is shifted toward the positive potential. According to this change in potential, it can be concluded that PEG 20000 has an inhibitory effect and SPS has an acceleration effect. When the potential is in a stable state, it represents a constant current density, so that the electroplating reaction occurs stably on the surface of the bulk copper, thereby forming a flat copper film layer.
圖4顯示實施例1-16經過電鍍後銅膜層形成在塊材銅上的照片。如圖4所示,銅膜層的亮度由SPS的濃度主導:在SPS為3 ppm時可到霧面的銅層,當SPS的濃度提高到6至12 ppm的範圍時可形成光亮的銅層。此外,隨著PEG的濃度增加,銅膜層的亮度輕微地增加。PEG的濃度增加至780 ppm時,僅在利用12 ppm的SPS觀察到光亮的銅膜層表面。光亮的銅膜層表面即代表銅膜層表面更佳地均勻平整。Figure 4 shows a photograph of the copper film layer formed on the bulk copper after electroplating of Examples 1-16. As shown in Figure 4, the brightness of the copper layer is dominated by the concentration of SPS: a copper layer that reaches the matte surface at an SPS of 3 ppm, and a bright copper layer when the SPS concentration is increased to a range of 6 to 12 ppm. . Further, as the concentration of PEG increases, the brightness of the copper film layer slightly increases. When the concentration of PEG was increased to 780 ppm, the surface of the bright copper film layer was observed only with SPS of 12 ppm. The surface of the bright copper film layer means that the surface of the copper film layer is more evenly flat.
圖5為每一個樣品經過FE-SEM拍攝的SEM影像。如圖5所示,可看出隨著SPS及PEG濃度的增加,銅的晶粒尺寸縮小。當SPS及PEG的濃度分別大於6及420 ppm時,銅晶粒尺寸顯著地縮小。然而,隨著SPS增加到12 ppm時觀察到小細孔,其主要是因為氫氣的產生。Figure 5 is an SEM image of each sample taken by FE-SEM. As shown in FIG. 5, it can be seen that as the concentration of SPS and PEG increases, the grain size of copper shrinks. When the concentrations of SPS and PEG were greater than 6 and 420 ppm, respectively, the copper grain size was significantly reduced. However, small pores were observed as the SPS increased to 12 ppm, mainly due to the generation of hydrogen.
當SPS及PEG的濃度分別為9 ppm及420 ppm時,在圖5的SEM影像中,可觀察到具有尺寸約在10 ± 5 nm的銅晶粒形成密集填充的表面。When the concentrations of SPS and PEG were 9 ppm and 420 ppm, respectively, in the SEM image of Fig. 5, it was observed that copper crystal grains having a size of about 10 ± 5 nm formed a densely packed surface.
當銅晶粒尺寸越小,則能夠彼此更緊密集填充形成緻密的銅膜層,同時減少銅晶粒之間所造成的空隙缺陷,因此,提高了銅膜層的在結構上的強度,可減少因碰撞或震動而造成銅膜層的損壞(例如,部分脫落或產生裂痕),於是增加了銅膜層的良率。When the copper grain size is smaller, it can be densely packed with each other to form a dense copper film layer, and at the same time, the void defects caused between the copper crystal grains are reduced, thereby improving the structural strength of the copper film layer. Reduce the damage of the copper layer caused by collision or vibration (for example, partial peeling or cracking), thus increasing the yield of the copper layer.
根據圖4、圖5及上述的說明,銅膜層的品質可由銅膜層的亮度及銅晶粒尺寸來評價。其中,PEG 20000的濃度在420 ppm~600 ppm且SPS的濃度在6~9 ppm有光亮的銅膜層表面及較小尺寸的銅晶粒。4, 5 and the above description, the quality of the copper film layer can be evaluated by the brightness of the copper film layer and the copper grain size. Among them, PEG 20000 has a concentration of 420 ppm to 600 ppm and a SPS concentration of 6 to 9 ppm has a bright copper film surface and a small size of copper crystal grains.
進一步,電流密度是控制電流速率的關鍵參數,即,高電流密度可使電鍍速率加快,進而縮短製程的時間。因此,再透過實施例17來驗證高電流密度下的銅膜層的品質。Further, the current density is a key parameter for controlling the current rate, that is, the high current density can speed up the plating rate, thereby shortening the process time. Therefore, the quality of the copper film layer at a high current density was verified by Example 17.
圖6(a)顯示實施例17在電流密度為7.5 A·dm -2下所形成的銅膜層照片及節瘤的SEM放大影像。照片上的黑點即為節瘤,並且可觀察到僅有少量節瘤產生在塊材銅的表面上。 Fig. 6(a) is a SEM enlarged image of a copper film layer and a nodule formed in Example 17 at a current density of 7.5 A·dm -2 . The black spots on the photo are nodules, and it can be observed that only a small number of nodules are produced on the surface of the bulk copper.
相同地,在420 ppm~780 ppm且SPS的濃度在6~12 ppm的範圍內,在7.5 A·dm -2的電流密度下也可以得到只有少量節瘤產生的銅層(未示出)。 Similarly, at a concentration of 420 ppm to 780 ppm and a concentration of SPS of 6 to 12 ppm, a copper layer (not shown) having a small amount of nodulation can be obtained at a current density of 7.5 A·dm -2 .
實施例17證實了可在7.5 A·dm -2的電流密度下形成了節瘤被抑制的銅膜層。銅晶粒的尺寸如圖6(b)所示,比在5 A·dm -2的電流密度下形成的銅晶粒的尺寸要大。因此,在高電流密度的電鍍過程中,可再進一步縮小銅晶粒的尺寸。 Example 17 demonstrates that a copper film layer with suppressed nodules can be formed at a current density of 7.5 A·dm -2 . The size of the copper crystal grains is as shown in Fig. 6(b), which is larger than the size of the copper crystal grains formed at a current density of 5 A·dm -2 . Therefore, in the high current density plating process, the size of the copper crystal grains can be further reduced.
關於縮小銅晶粒尺寸,調整擾動銅電鍍液的擾動速率能有效地控制銅晶粒尺寸,其結果可藉由實施例17-19來證實。調整擾動速率的實施例17-19其銅膜層的SEM影像分別對應至圖7(a)至圖7(c),可以觀察到圖7(c)的銅晶粒尺寸為三者中最小,因此證實了隨著擾動速率降低,銅晶粒的尺寸也隨之縮小。With regard to reducing the copper grain size, adjusting the disturbance rate of the disturbed copper plating solution can effectively control the copper grain size, and the results can be confirmed by Examples 17-19. The SEM images of the copper film layers of Examples 17-19 for adjusting the disturbance rate correspond to FIG. 7(a) to FIG. 7(c), respectively, and it can be observed that the copper grain size of FIG. 7(c) is the smallest among the three. Therefore, it was confirmed that as the disturbance rate decreases, the size of the copper crystal grains also shrinks.
為了說明擾動速率對於銅晶粒的尺寸的影響,圖8模擬了銅膜層形成在塊材銅上的生長機制。首先,圖8(a)示出一個簡單的電鍍裝置100,電鍍裝置100的電鍍槽內分別設有工作電極1及對電極2並且裝滿電鍍液。接著如圖8(b)所示,在電鍍的過程,Cu +離子3與PEG分子4的醚官能基配位,並且與Cl -離子5連接以形成複合物(即,PEG-Cu +-Cl -複合物)。若PEG-Cu +-Cl -複合物朝工作電極1移動並且吸附在電極表面時形成銅晶粒6時,則可抑制較大的銅晶粒(即,節瘤7)產生。然而,PEG分子4的分子量明顯地大於其他添加劑,移動速度緩慢,如果在電鍍期間用力擾動電鍍液,會導致PEG-Cu +-Cl -複合物無法完全吸附在工作電極的表面上,於是降低抑制效果。此外,還可能因為擾動使PEG的分子長鏈纏繞,也導致抑制效果降低。 To illustrate the effect of the perturbation rate on the size of the copper grains, Figure 8 simulates the growth mechanism of the copper film layer formed on the bulk copper. First, FIG. 8(a) shows a simple plating apparatus 100 in which a working electrode 1 and a counter electrode 2 are respectively provided in a plating tank and filled with a plating solution. Next, as shown in FIG. 8(b), during the electroplating process, Cu + ion 3 is coordinated to the ether functional group of the PEG molecule 4, and is bonded to the Cl − ion 5 to form a complex (ie, PEG-Cu + -Cl). - Complex). When the PEG-Cu + -Cl - complex moves toward the working electrode 1 and forms copper crystal 6 when adsorbed on the surface of the electrode, generation of a large copper crystal grain (i.e., nodule 7) can be suppressed. However, the molecular weight of PEG molecule 4 is significantly larger than other additives, and the moving speed is slow. If the plating solution is strongly disturbed during electroplating, the PEG-Cu + -Cl - complex cannot be completely adsorbed on the surface of the working electrode, thus reducing the inhibition. effect. In addition, it is also possible that the long chain of the molecules of the PEG is entangled by the disturbance, and the suppression effect is also lowered.
由此可知,PEG的抑制效應容易被液體的流動所影響。針對PEG 20000,較低的擾動速率可獲得較小尺寸的銅晶粒。From this, it can be seen that the inhibitory effect of PEG is easily affected by the flow of the liquid. For PEG 20000, a lower disturbance rate results in a smaller size copper grain.
此外,一般是將擾動電鍍液所產生的擾流方向與工作電極表面呈垂直,以讓PEG分子4直向工作電極表面移動。然而,在此情況下容易增加多個PEG分子4彼此纏繞的機會,因此,當擾流方向與工作電極表面呈10~80度的夾角時,可減少PEG分子4垂直於工作電極的移動速度分量並增加平行於工作電極的移動速度分量,藉此可減少PEG分子4彼此間的纏繞,進而提高抑制節瘤產生的效果。In addition, the disturbing flow direction generated by the disturbing plating solution is generally perpendicular to the surface of the working electrode to move the PEG molecules 4 straight to the surface of the working electrode. However, in this case, it is easy to increase the chance that a plurality of PEG molecules 4 are entangled with each other. Therefore, when the turbulence direction is at an angle of 10 to 80 degrees with the surface of the working electrode, the moving velocity component of the PEG molecule 4 perpendicular to the working electrode can be reduced. The moving speed component parallel to the working electrode is increased, whereby the entanglement of the PEG molecules 4 with each other can be reduced, thereby improving the effect of suppressing the occurrence of nodules.
進一步,將銅電鍍液用於形成銅柱。銅柱的SEM影像如圖9所示,圖9(a)為具有高度約60 ± 3 um 銅柱陣列。在圖9(b)的高解析影像中,更可觀察到銅柱的頂部具有平滑的平面。Further, a copper plating solution is used to form a copper pillar. The SEM image of the copper pillar is shown in Fig. 9, and Fig. 9(a) is an array of copper pillars having a height of about 60 ± 3 um. In the high-resolution image of Fig. 9(b), it is more observed that the top of the copper pillar has a smooth plane.
在形成銅柱的過程中,通孔底部的液體流動速率低於外部的液體流動速率,低的液體流動速率提供了PEG-Cu +-Cl -複合物能夠完全吸附在通孔底部的電極表面的環境。因此,在電鍍期間,可在通孔中生長具有緊密填充表面的平坦頂部的銅柱。 During the formation of the copper column, the liquid flow rate at the bottom of the through hole is lower than the external liquid flow rate, and the low liquid flow rate provides that the PEG-Cu + -Cl - composite can be completely adsorbed on the electrode surface at the bottom of the through hole. surroundings. Thus, during electroplating, a flat top copper pillar with a tightly packed surface can be grown in the via.
因此,透過本發明形成銅柱的方法,可以在7.5 A·dm -2的高電流密度進行電鍍,縮短了製程時間。由於所形成的銅柱具有平坦的頂部,於是可以不需要導入CMP製程使銅柱頂部平坦化,節省了生產成本。 Therefore, by the method of forming a copper pillar according to the present invention, electroplating can be performed at a high current density of 7.5 A·dm -2 , which shortens the process time. Since the formed copper pillar has a flat top, it is possible to planarize the top of the copper pillar without introducing a CMP process, thereby saving production costs.
進一步地,在實施例22中,當電流密度提高至9 A·dm -2時,銅柱的頂部開始出現凸塊(未示出),但仍然可以得到銅晶粒填充密度高的銅柱,電鍍時間也大幅縮短。 Further, in Embodiment 22, when the current density is increased to 9 A·dm -2 , a bump (not shown) starts to appear at the top of the copper pillar, but a copper pillar having a high copper grain filling density can still be obtained. The plating time is also greatly shortened.
根據以上實施例的驗證,本發明之一種銅電鍍液、電鍍銅的方法以及形成銅柱的方法。相較於使用了PEG 4000~8000的傳統銅電鍍液,本發明選用分子量更高的PEG 20000,在提高的電流密度下進行電鍍,縮短了電鍍的時間,並且抑制節瘤在表面的形成。According to the verification of the above embodiment, a copper plating solution, a method of electroplating copper, and a method of forming a copper pillar of the present invention. Compared with the conventional copper plating solution using PEG 4000-8000, the present invention selects PEG 20000 with higher molecular weight, performs electroplating at an increased current density, shortens the plating time, and inhibits the formation of nodules on the surface.
此外,透過調整PEG和SPS的濃度,藉此來控制銅膜層中的銅晶粒尺寸,以改善銅膜層的填充密度,可更進一步改善銅膜層的品質、增加銅膜層的良率。In addition, by adjusting the concentration of PEG and SPS, thereby controlling the copper grain size in the copper film layer to improve the filling density of the copper film layer, the quality of the copper film layer can be further improved, and the yield of the copper film layer can be further improved. .
再者,利用本發明的銅電鍍液來形成銅柱,更可以改善銅柱的品質及頂部形貌。其中,在直接形成具有平坦頂部的銅柱的條件下,還可省略使銅柱頂部平坦化的CMP製程,節省了生產的成本。Furthermore, by using the copper plating solution of the present invention to form a copper pillar, the quality and topography of the copper pillar can be improved. Among them, under the condition that the copper pillar having a flat top is directly formed, the CMP process for flattening the top of the copper pillar can be omitted, which saves the production cost.
惟,以上所揭露之圖示及說明,僅為本發明之較佳實施例而已,非為用以限定本發明之實施,大凡熟悉該項技藝之人士其所依本發明之精神,所作之變化或修飾,皆應涵蓋在以下本案之申請專利範圍內。The illustrations and descriptions of the present invention are merely preferred embodiments of the present invention, and are not intended to limit the implementation of the present invention, and those who are familiar with the art are subject to the changes in the spirit of the present invention. Or the modifications should be covered by the following patent application in this case.
表1 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 物質(ppm) </td><td> 電流密度 (A·dm<sup>-2</sup>) </td><td> 擾動速率 (rpm) </td></tr><tr><td> PEG 20000 </td><td> SPS </td></tr><tr><td> 實施例1 </td><td> 240 </td><td> 6 </td><td> 5 </td><td> 150 </td></tr><tr><td> 實施例2 </td><td> 240 </td><td> 3 </td></tr><tr><td> 實施例3 </td><td> 240 </td><td> 9 </td></tr><tr><td> 實施例4 </td><td> 240 </td><td> 12 </td></tr><tr><td> 實施例5 </td><td> 420 </td><td> 3 </td></tr><tr><td> 實施例6 </td><td> 420 </td><td> 6 </td></tr><tr><td> 實施例7 </td><td> 420 </td><td> 9 </td></tr><tr><td> 實施例8 </td><td> 420 </td><td> 12 </td></tr><tr><td> 實施例9 </td><td> 600 </td><td> 3 </td></tr><tr><td> 實施例10 </td><td> 600 </td><td> 6 </td></tr><tr><td> 實施例11 </td><td> 600 </td><td> 9 </td></tr><tr><td> 實施例12 </td><td> 600 </td><td> 12 </td></tr><tr><td> 實施例13 </td><td> 780 </td><td> 3 </td></tr><tr><td> 實施例14 </td><td> 780 </td><td> 6 </td></tr><tr><td> 實施例15 </td><td> 780 </td><td> 9 </td></tr><tr><td> 實施例16 </td><td> 780 </td><td> 12 </td></tr><tr><td> 實施例17 </td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 150 </td></tr><tr><td> 實施例18 </td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 100 </td></tr><tr><td> 實施例19 </td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 60 </td></tr></TBODY></TABLE>Table 1 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> Substance (ppm) </td><td> Current Density ( A·dm<sup>-2</sup>) </td><td> Disturbance Rate (rpm) </td></tr><tr><td> PEG 20000 </td><td> SPS < /td></tr><tr><td> Example 1 </td><td> 240 </td><td> 6 </td><td> 5 </td><td> 150 </ Td></tr><tr><td> Example 2 </td><td> 240 </td><td> 3 </td></tr><tr><td> Example 3 </ Td><td> 240 </td><td> 9 </td></tr><tr><td> Example 4 </td><td> 240 </td><td> 12 </td ></tr><tr><td> Example 5 </td><td> 420 </td><td> 3 </td></tr><tr><td> Example 6 </td ><td> 420 </td><td> 6 </td></tr><tr><td> Example 7 </td><td> 420 </td><td> 9 </td> </tr><tr><td> Example 8 </td><td> 420 </td><td> 12 </td></tr><tr><td> Example 9 </td> <td> 600 </td><td> 3 </td></tr><tr><td> Example 10 </td><td> 600 </td><td> 6 </td>< /tr><tr><td> Example 11 </td><td> 600 </td><td> 9 </td></tr><tr><td> Example 12 </td>< Td> 600 </td><td> 12 </td></tr><tr><td> Example 13 </td><td> 780 </td><td> 3 </td></ Tr><tr><td> Example 14 </td><td> 780 </td><td> 6 </td></tr><tr><td> Example 15 </td><td> 780 </td><td> 9 < /td></tr><tr><td> Example 16 </td><td> 780 </td><td> 12 </td></tr><tr><td> Example 17 < /td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 150 </td></tr><tr><td> Example 18 </ Td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 100 </td></tr><tr><td> Example 19 </td ><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 60 </td></tr></TBODY></TABLE>
表2 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> 物質(ppm) </td><td> 電流密度 (A·dm<sup>-2</sup>) </td><td> 擾動速率 (rpm) </td></tr><tr><td> PEG 20000 </td><td> SPS </td></tr><tr><td> 實施例20 </td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 60 </td></tr><tr><td> 實施例21 </td><td> 600 </td><td> 9 </td><td> 9 </td><td> 60 </td></tr></TBODY></TABLE>Table 2 <TABLE border="1" borderColor="#000000" width="85%"><TBODY><tr><td> </td><td> Substance (ppm) </td><td> Current Density ( A·dm<sup>-2</sup>) </td><td> Disturbance Rate (rpm) </td></tr><tr><td> PEG 20000 </td><td> SPS < /td></tr><tr><td> Example 20 </td><td> 600 </td><td> 9 </td><td> 7.5 </td><td> 60 </ Td></tr><tr><td> Example 21 </td><td> 600 </td><td> 9 </td><td> 9 </td><td> 60 </td ></tr></TBODY></TABLE>
S101~S103‧‧‧步驟S101~S103‧‧‧Steps
S201~S204‧‧‧步驟S201~S204‧‧‧Steps
100‧‧‧電鍍裝置100‧‧‧ plating equipment
1‧‧‧工作電極1‧‧‧Working electrode
2‧‧‧對電極2‧‧‧ opposite electrode
3‧‧‧Cu+離子3‧‧‧Cu + ions
4‧‧‧PEG4‧‧‧PEG
5‧‧‧Cl-離子5‧‧‧Cl - ion
6‧‧‧銅晶粒6‧‧‧ copper grain
7‧‧‧節瘤7 ‧ ‧ section
圖1為電鍍銅的步驟流程圖; 圖2為形成銅柱的步驟流程圖; 圖3為在電鍍期間電位與反應時間的曲線圖; 圖4為經過電鍍後銅膜形成在塊材銅上的照片; 圖5為經過電鍍後銅膜形成在塊材銅上的SEM影像; 圖6為在7.5 A·dm -2的電流密度下銅膜形成在塊材銅上的照片和SEM影像; 圖7為在不同的擾動速率下銅膜形成在塊材銅上的照片和SEM影像; 圖8為銅膜形成在塊材銅上的生長機制的模擬圖; 圖9為具有平坦頂部的銅柱的SEM影像。 1 is a flow chart of a step of electroplating copper; FIG. 2 is a flow chart of a step of forming a copper post; FIG. 3 is a graph of potential and reaction time during electroplating; and FIG. 4 is a copper film formed on a bulk copper after electroplating. Figure 5 is an SEM image of a copper film formed on a bulk copper after electroplating; Figure 6 is a photo and SEM image of a copper film formed on a bulk copper at a current density of 7.5 A·dm -2 ; Photographs and SEM images of the copper film formed on the bulk copper at different perturbation rates; Figure 8 is a simulation of the growth mechanism of the copper film formed on the bulk copper; Figure 9 is a SEM of the copper column with a flat top image.
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